Abstract

A light-emitting diode and a light-emitting device are provided. The light-emitting diode includes a semiconductor stack layer and a first electrode. The semiconductor stack layer has a light output surface and a back surface opposite to each other. On the back surface, the semiconductor stack layer has a first mesa exposing a first semiconductor layer thereof and a second mesa adjacent to the first mesa. The first electrode formed on the back surface of the semiconductor stack layer at least surrounds a portion of the second mesa, and the first electrode surrounding a portion of the second mesa extends toward the light output surface. The first electrode has a first chamfer portion, and the second mesa has a second chamfer portion. The first electrode and the second mesa have a minimum distance L, and a radius of curvature of the second chamfer portion is greater than or equal to √{square root over (2)}L.

IPC Classes  ?

• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light-emitting diode device including a substrate, a structural layer, and a light-emitting diode mesa is provided. The substrate has a first surface and a second surface arranged opposite each other. The first surface includes a first region and a second region, and the second region surrounds the first region. The structural layer covers the first region and the second region and at least includes an electrode layer, a second insulating layer, and a first insulating layer stacked in sequence from the first surface. The light-emitting diode mesa is arranged above the first region of the structural layer and includes a semiconductor epitaxial layer. The semiconductor epitaxial layer includes a second semiconductor layer, an active layer, and a first semiconductor layer stacked in sequence from the first surface.

IPC Classes  ?

• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/42 - Transparent materials

Abstract

A micro light-emitting device includes a semiconductor epitaxial structure, a convex lens structure, and a light-reflecting structure. The semiconductor epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked in such order. The convex lens structure is disposed on a light-exiting side of the semiconductor epitaxial structure and has a lens bottom connected thereof. The convex lens structure protrudes outward in a direction corresponding to a direction along which light exits. The light-reflecting structure is disposed at an outer surface of the convex lens structure proximate to the lens bottom. The light-reflecting structure having a light-reflecting surface that faces the outer surface of the convex lens structure. A display device includes a driver substrate and a pixel unit including a plurality of the micro light-emitting devices above. The micro light-emitting devices are arranged in an array on the driver substrate.

IPC Classes  ?

• H01L 33/60 - Reflective elements
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

A LED includes: a metal substrate including a first metal layer; a semiconductor layer sequence disposed on the metal substrate, where the semiconductor layer sequence includes a first semiconductor layer, a second semiconductor layer and an active layer disposed between the first semiconductor layer and the second semiconductor layer; a first electrode, electrically connected to the first semiconductor layer; and a second electrode, electrically connected to the second semiconductor layer. A side of the metal substrate facing away the semiconductor layer sequence defines a groove, a second metal layer is disposed in the groove, the metal substrate includes a groove edge which is protruded, and the groove edge is no more than 0.5 μm higher than the second metal layer, enhancing the reliability of the LED in the packaged bonding product.

IPC Classes  ?

• H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls

Abstract

An epitaxial structure, a light emitting diode (LED), and a method of manufacturing the epitaxial structure are provided. The epitaxial structure includes a P-type semiconductor layer, a light emitting region, and a N-type semiconductor layer stacked in sequence. A thickness of the P-type semiconductor layer 110 is less than or equal to 1.0 μm. By limiting the overall thickness of the P-type semiconductor layer, the internal stress and the internal stress distribution of each sublayer are optimized. Stress accumulation is effectively reduced, and structural defects of the light emitting diode caused by stress release during packaging and use are reduced or eliminated. The light emitting brightness of the light emitting diode is thereby improved, and the service life of the light emitting diode is prolonged.

IPC Classes  ?

• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

A LED includes: a semiconductor layer sequence, a first electrode and a second electrode, and the semiconductor layer sequence includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer arranged sequentially from bottom to top in that order. The first or second electrode includes an electrode structure including a first metal layer, a second metal layer, and a third metal layer. The first metal layer is electrically connected to the semiconductor layer sequence, the second metal layer is disposed on the first metal layer, and the third metal layer is disposed on the second metal layer. The second metal layer includes a nickel-phosphorus alloy or a nickel-phosphorus compound. The design of the second metal layer enhances the electrode adhesion and reliability during soldering, preventing the diffusion of an external solder to the first metal layer, thereby avoiding the risk of electrode detachment caused by push force.

IPC Classes  ?

• H01L 33/40 - Materials therefor
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

A light-emitting diode includes a substrate, a semiconductor stack layer, a DBR stack structure that includes a first material layer and a second material layer, which are repeatedly stacked. Optical thicknesses of the first material layer and the second material layer are capable of: reflecting light within a first wavelength range and within a first angle range, transmitting a part of light within the first wavelength range and within a second angle range, where the first angle range is less than the second angle range. A reflectivity in response to light with at least one wavelength in a second wavelength range and having an incident angle of 0-10 degrees is ≥40%, the DBR stack structure has a color, and wavelengths contained in the second wavelength range are ≥ a critical wavelength of the color corresponding to the DBR stack structure through which AOI testing passes.

IPC Classes  ?

• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

Disclosed are a light emitting diode element, a manufacturing method thereof, and a light emitting apparatus. In the light emitting diode element, a surface of a first bond layer formed on an epitaxial structure is a smooth surface without height difference. Further, a surface roughness thereof may be less than 10 nm. Therefore, when the substrate and epitaxial structure are bonded, the two bond layers are plane-to-plane bonded, and no defect such as voids occurs to ensure the bonding strength. Thereby, the bonding stability between the substrate and the epitaxial structure is ensured, and the yield of the device is improved. At the same time, there is no similar defect such as voids, which facilitates to reduce the voltage of the device and improve the photoelectric efficiency of the device.

IPC Classes  ?

• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

A micro light-emitting diode and a preparation method therefor, a micro light-emitting element and a display. The micro light-emitting diode comprises an epitaxial layer and a dielectric layer, wherein the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are arranged in sequence, and has a first surface and a second surface which are arranged opposite each other, the first semiconductor layer being located on the side of the epitaxial layer close to the first surface; the epitaxial layer is configured with a mesa, and the mesa is exposed from the first semiconductor layer and faces the second surface; and the dielectric layer covers the first surface and at least part of a side wall of the epitaxial layer, and the height H1 of the dielectric layer on the side wall of the epitaxial layer is less than the height of the mesa.

IPC Classes  ?

• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The disclosure relates to a technical field of a semiconductor optoelectronic device, and more particularly, to a light emitting diode and a light emitting device. To solve an issue that a metal layer of the existing light emitting diode has insufficient adhesion on an insulation layer, the light emitting diode includes a semiconductor epitaxial stack layer including a first conductive semiconductor layer, a light emitting layer, and a second conductive semiconductor layer sequentially stacked and disposed; an interface transition layer located above the semiconductor epitaxial stack layer; the interface transition layer including an insulation metal oxide or a stack layer of the insulation metal oxides; a first insulation layer disposed between the interface transition layer and the semiconductor epitaxial stack layer; the metal layer covering a portion of a surface of the interface transition layer and electrically connected to the semiconductor epitaxial stack layer.

IPC Classes  ?

• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

A micro light-emitting device includes a semiconductor epitaxial structure having a bottom surface and a top surface opposite to each other, and including a first cladding layer, an active layer, and a second cladding layer disposed sequentially in such order in a direction from the bottom surface to the top surface. At least one of the first and second cladding layers has a super-lattice structure. The super-lattice structure of the first cladding layer includes first sublayers and second sublayers stacked alternately. Each first sublayer includes Alx1Ga1-x1InP, and each second sublayer includes Alx2Ga1-x2InP, where 0

IPC Classes  ?

• H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Abstract

A light-emitting diode includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack has a first surface and a second surface opposite to each other. The DBR structure is disposed on one of the first surface and the second surface of the semiconductor light-emitting stack, and includes at least one set of light-transmitting layers including at least two of the light-transmitting layers which have different refractive indices and roughened interface.

IPC Classes  ?

• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

A semiconductor laser element, comprising a semiconductor stack, wherein the semiconductor stack comprises an N-side semiconductor layer (20), an active layer (30) and a P-side semiconductor layer (40) which are sequentially stacked. The N-side semiconductor layer (20) comprises n-type impurities that have a concentration curve in the thickness direction of the semiconductor stack; the concentration curve comprises a first section (L1) and a second section (L2); the first section (L1) corresponds to the area of the N-side semiconductor layer (20) facing away from the active layer (30); the second section (L2) corresponds to the area of the N-side semiconductor layer (20) close to the active layer (30); the second section (L2) comprises a first peak shape (P1); the first section (L1) has a first concentration; and the peak concentration of the first peak shape (P1) is greater than the first concentration.

IPC Classes  ?

• H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser

Abstract

A LED packaging module includes a plurality of LED chips, a wiring layer, and an encapsulant component. The LED chips are spaced apart, each of which includes chip first, chip second, and chip side surfaces, and an electrode unit. The wiring layer is disposed on the chip second surfaces, has first, second, and side wiring layer surfaces, and is divided into a plurality of wiring parts spaced apart. The first wiring layer surface contacts and is electrically connected to the electrode units. The encapsulant component includes first and second encapsulating layers, covers the chip side surfaces, the chip first surfaces, and the side wiring layer surface, and fills gaps among the wiring parts. Each LED chip has a thickness represented by TA, the first encapsulating layer has a thickness represented by TB, and TA and TB satisfy a relationship: TB/TA≥1.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/56 - Materials, e.g. epoxy or silicone resin

Abstract

A light emitting diode includes a substrate and a semiconductor light emitting stack layer. The semiconductor light emitting stack layer is disposed on the substrate, and the substrate has four sidewalls, an upper surface, and a lower surface. At least one sidewall is provided with a first laser dotting region and a second laser dotting region. The first laser dotting region includes first laser dots, and the second laser dotting region includes second laser dots. A stress crack is present between the first laser dotting region and the second laser dotting region. A first distance D1 is present between the first laser dotting region and the stress crack, a second distance D2 is present between the second laser dotting region and the stress crack, and 0.7D2

IPC Classes  ?

• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A display apparatus includes a thin-film transistor (TFT) substrate and a light-emitting module arranged on the TFT substrate. The light-emitting module includes multiple light-emitting elements, the light-emitting elements include a first light-emitting element emitting a first wavelength, a second light-emitting element emitting a second wavelength, and a third light-emitting element emitting a third wavelength. A voltage of each light-emitting element is greater than or equal to 3 volts (V) when a rated current is 1 microampere (μA).

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
• H01L 33/54 - Encapsulations having a particular shape

Abstract

The present application provides a semiconductor laser element, comprising: a substrate; and a semiconductor stack which comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, a ridge portion being formed on the surface of the second semiconductor layer. The semiconductor stack comprises a first top surface connected to the side surface of the ridge portion and a second top surface close to a first side surface of the substrate or a second side surface of the substrate; the first top surface exposes part of the surface of the second semiconductor layer, and the second top surface exposes part of the surface of the first semiconductor layer; the semiconductor stack further comprises a connecting surface exposing part of the surface of the first semiconductor layer, a first side wall and a second side wall; the first side wall is arranged between the first top surface and the connecting surface, the second side wall is arranged between the second top surface and the connecting surface, and the length of the first side wall is greater than or equal to the length of the second side wall.

IPC Classes  ?

• H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

An ultraviolet light-emitting diode includes a semiconductor layered stack, an ohmic contact layer, a metal current spreading layer, and a reflective layer. The semiconductor layered stack includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and generating light by electron-hole recombination. The ohmic contact layer is formed on the second semiconductor layer, and forms an ohmic contact with the second semiconductor layer. The metal current spreading layer is formed on the ohmic contact layer, and electrically connected to the second semiconductor layer through the ohmic contact layer. The reflective layer is formed on the metal current spreading layer, and covers an exposed surface of the second semiconductor layer. A light-emitting device including the ultraviolet light-emitting diode is also provided.

IPC Classes  ?

• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/42 - Transparent materials
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light-emitting diode includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to each other, and that includes a first semiconductor layer, a second semiconductor layer, an active layer, and a third semiconductor layer disposed in such order in a direction from the first surface to the second surface. The first semiconductor layer includes a first sublayer and a second sublayer. A surface of the first sublayer away from the second sublayer is the first surface. The first surface has a roughened surface. The second sublayer is closer to the second surface than the first sublayer. Each of the first sublayer and the second sublayer includes an aluminum-containing compound semiconductor material. An aluminum content of the first sublayer is smaller than that of the second sublayer. A method for manufacturing the light-emitting diode is also provided.

IPC Classes  ?

• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

A light-emitting device includes a semiconductor epitaxial unit, a first contact electrode, and a second contact electrode. The semiconductor epitaxial unit includes a first semiconductor layer, a second semiconductor layer, and an active layer. The first contact electrode and the second contact electrode are disposed on the semiconductor epitaxial unit, and are electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. The first contact electrode includes an ohmic contact layer and a first electrode barrier layer. The second contact electrode includes an ohmic contact layer and a second electrode barrier layer. The ohmic contact layer of the first contact electrode includes a first ohmic contact layer. The ohmic contact layer of the second contact electrode includes a second ohmic contact layer. The second contact electrode further includes another first ohmic contact layer disposed between the second ohmic contact layer and the second electrode barrier layer.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/40 - Materials therefor
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light-emitting device includes a lead frame, a light-emitting diode (LED) chip, and an encapsulant. The LED chip is disposed on the lead frame, and includes a substrate, a semiconductor light-emitting unit disposed on a surface of the substrate, and a first electrode and a second electrode, which are disposed on the surface of the substrate, and which are located outwardly of the semiconductor light-emitting unit. The first and second electrodes are electrically connected to a lower surface of the semiconductor light-emitting unit, and are respectively connected to a first wiring bonding region and a second wiring bonding region on the lead frame. The encapsulant encapsulates the LED chip.

IPC Classes  ?

• H10H 20/856 - Reflecting means
• H10H 20/851 - Wavelength conversion means
• H10H 20/853 - Encapsulations characterised by their shape
• H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls

Abstract

A light-emitting diode (LED) chip includes a semiconductor laminated layer including a first semiconductor layer, a light-emitting layer and a second semiconductor layer arranged from bottom to top, a transparent conductive layer disposed on the semiconductor laminated layer, a transparent bonding layer disposed on the transparent conductive layer, and a transparent substrate disposed on the transparent bonding layer. The second semiconductor layer includes a first sublayer and a second sublayer disposed on a part of an upper surface of the first sublayer, and a doping concentration of the first sublayer is lower than that of the second sublayer. The transparent conductive layer is in contact with an upper surface of the second sublayer and a part of the upper surface of the first sublayer around the second sublayer. The LED chip can improve the manufacturing yield and ensure the ohmic contact and uniform lateral current spreading.

IPC Classes  ?

• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

The disclosure relates to the field of semiconductor manufacturing technology, and in particular to a vertical-type light-emitting diode, which includes a substrate, a semiconductor stack layer and an insulation implant layer. The semiconductor stack layer is disposed on the substrate, and the semiconductor stack layer includes the first semiconductor layer, the light-emitting layer and the second semiconductor layer that are sequentially stacked on the substrate. The insulation implant layer is formed in the semiconductor stack layer to divide the semiconductor stack layer into at least two individual dies. By forming the insulation implant layer in the semiconductor stack layer, it is possible to achieve small spacing between dies and allow them to be insulated from each other without the need to create trenches or use PI adhesive. It is possible to ensure the photoelectric quality of the vertical-type light-emitting diodes and make the surface of the vertical-type light-emitting diodes flatter.

IPC Classes  ?

• H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Abstract

A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface. The semiconductor epitaxial structure includes a first-type semiconductor layered unit, an active layer, and a second-type semiconductor layered unit sequentially disposed in such order in a direction from the first surface to the second surface. The active layer includes quantum well layers and quantum barrier layers stacked alternately, each of the quantum well layers includes a material that is represented by InxGa1-xAs, and each of the quantum barrier layers includes a material that is represented by GaAs1-yPy, where 0.2≤x≤0.3, and 0≤y≤y0.05.

IPC Classes  ?

• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

The light-emitting device includes a substrate, a light-emitting chip unit formed on the substrate and including multiple chips, an isolation groove extending in a first direction and separating two adjacent ones of the chips, and a bridging structure. The isolation groove is defined by a bottom and two sidewalls and has a first groove section and a second groove section arranged in the first direction. The first groove section has a width in a width direction perpendicular to the first direction that is greater than a width of the second groove section in the width direction. At the first groove section, one of the sidewalls has a curved portion. The bridging structure is formed on the bottom and the sidewalls, covers the curved portion, and electrically connects the two adjacent ones of the chips.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

An epitaxial structure of a semiconductor light-emitting element includes an n-type layer, a V-pit control layer, a light-emitting layer, and a p-type layer stacked from bottom to top. The light-emitting layer includes a plurality of well layers and a plurality of barrier layers stacked alternately. The V-pit control layer includes a first superlattice layer, and a distance between a bottom surface of the V-pit control layer and a bottom surface of the first superlattice layer is less than or equal to 0.15 μm. The bottom surface of the first superlattice layer and a bottom surface of the light-emitting layer have a distance therebetween ranging from 0.05 μm to 0.3 μm, and each of the first superlattice layer and the light-emitting layer is an Indium (In)-containing layer. A semiconductor light-emitting element and a light-emitting device are also provided.

IPC Classes  ?

• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

A micro light-emitting diode. The micro light-emitting diode has a semiconductor layer sequence, wherein a back side of the semiconductor layer sequence is provided with a first metal electrode and a second metal electrode, and comprises a first mesa in a groove, a second mesa, and a groove side wall located between the first mesa and the second mesa, the first metal electrode being arranged on the first mesa; a first-type semiconductor layer in the semiconductor layer sequence is a support layer; the distance from a bottom surface of the groove to a front side of the semiconductor layer sequence is not greater than four microns; on a horizontal projection plane of a long side of the support layer, the semiconductor layer sequence is at least partially penetrated by the groove; and the first metal electrode extends along the long side of the support layer, and specifically extends from the groove side wall to the second mesa, thereby improving the structural strength of the micro light-emitting diode.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

The invention discloses a light-emitting diode and a light-emitting device. The light-emitting diode includes a semiconductor epitaxial stack having first and second surfaces opposite to each other and including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer stacked in sequence in a direction from the first surface to the second surface. The active layer includes n periods of quantum well structure, and each period of quantum well structure includes a well layer and a barrier layer deposited sequentially. A first spacer layer is disposed between the first-type semiconductor layer and the active layer, and a ratio of a thickness (nm) of the first spacer layer to a current density (A/cm2) of the light-emitting diode ranges from 0 to 10. In the invention, the thickness of the first spacer layer is adjusted according to the current density of the light-emitting diode to improve the luminous efficiency of the light-emitting diode.

IPC Classes  ?

• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

The present invention relates to the technical field of light-emitting diode chips, and in particular to a light-emitting diode and a light-emitting apparatus. The light-emitting diode comprises: a semiconductor layer sequence, the semiconductor layer sequence sequentially comprising a first semiconductor layer, a light-emitting layer and a second semiconductor layer from bottom to top; and a first electrode and a second electrode, the first electrode or the second electrode having an electrode structure, the electrode structure comprising a first metal layer, a second metal layer and a third metal layer, the first metal layer being electrically connected to a second semiconductor layer sequence, the second metal layer being provided on the first metal layer, the third metal layer being provided on the second metal layer, and the second metal layer containing a nickel-phosphorus alloy or a nickel-phosphorus compound. Compared with the prior art, by means of the design of adding the second metal layer, the present invention enhances the welding adhesion and reliability when electrodes are welded, and can also block the diffusion of external solder to the first metal layer so as to avoid the risk that the electrodes fall off due to thrust.

IPC Classes  ?

• H01L 33/40 - Materials therefor

Abstract

A light-emitting diode and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, an LED wafer is provided. The LED wafer includes a substrate and a light-emitting semiconductor stacking structure positioned on the surface of the substrate. The light-emitting semiconductor stacking structure includes a first type semiconductor layer, an active layer, and a second type semiconductor layer from a side of the substrate. Second, dicing lanes are defined on the upper surface of the LED wafer. Third, dicing is performed along the dicing lanes of the substrate using a laser. The laser is focused on the lower surface of the substrate to form a surface hole and focused inside the substrate to form an internal hole. The diameter of the surface hole is greater than the diameter of the internal hole. Fourth, the LED wafer is separated into LED chips along the dicing lanes.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

Disclosed is a light-emitting device which includes a light-emitting element and a wavelength conversion layer, and light of a first wavelength emitted by the light-emitting element is converted into light of a second wavelength and light of a third wavelength through the wavelength conversion layer. The light-emitting element includes a first contact layer, and the reflectivity of the first contact layer to the third wavelength is greater than 85%, so that the reflectivity of the light of the second wavelength and the light of the third wavelength converted by the wavelength conversion layer and reflected to the surface of the light-emitting element may be increased, and the white light conversion efficiency and the light extraction efficiency of the light-emitting device are improved.

IPC Classes  ?

• H01L 33/60 - Reflective elements
• H01L 33/50 - Wavelength conversion elements
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A flip-chip light emitting diode includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The light emitting layer is located between the first semiconductor layer and the second semiconductor layer. The first electrode is located on the epitaxial structure and is electrically connected to the first semiconductor layer. The second electrode is located on the epitaxial structure and is electrically connected to the second semiconductor layer. The first electrode and/or the second electrode is a multilayer metal structure. The multilayer metal structure includes a metal reflective layer, a first barrier layer, and a conductive metal layer stacked in sequence on the first semiconductor layer. A thickest layer in the multilayer metal structure is the conductive metal layer, and the conductive metal layer is an Al layer.

IPC Classes  ?

• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

A light emitting diode includes a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure has a first surface and a second surface. The semiconductor structure includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer that includes a P-type contact layer, and a P-type base layer located between the P-type contact layer and the active layer. The active layer is located between the N-type semiconductor layer and the P-type semiconductor layer. The first electrode is located on the second surface of the semiconductor structure, and is electrically connected to the N-type semiconductor layer. The second electrode is located on the second surface of the semiconductor structure, and is electrically connected to the P-type semiconductor layer. A P-type dopant concentration in the P-type contact layer gradually decreases along a direction from the first surface towards the second surface.

IPC Classes  ?

• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/40 - Materials therefor
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Abstract

x11-x1x21-x21-x2InP material, wherein 0 < x1 < x2 ≤ 1. In the present invention, a first cover layer and/or a second cover layer include(s) a superlattice structure, such that the crystal quality of a semiconductor epitaxial stack and the uniformity of current spreading of a micro light-emitting diode can be improved, thereby improving the luminous efficiency of the micro light-emitting diode under a small current density.

IPC Classes  ?

• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction

Abstract

A light-emitting diode includes a semiconductor epitaxial structure and an electrode structure. The electrode structure includes an ohmic contact layered unit disposed on the semiconductor epitaxial structure, and a wire bonding layered unit disposed on the ohmic contact layered unit. The wire bonding layered unit includes at least one stress buffer portion and a pad portion disposed on the at least one stress buffer portion. The stress buffer portion includes at least two stress buffer layers and an electrode metal layer disposed therebetween. Each of the stress buffer layers has a hardness greater than that of the pad portion. A light-emitting device is also disclosed.

IPC Classes  ?

• H01L 33/40 - Materials therefor
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

An LED packaging device includes a packaging substrate, a LED chip and a packaging layer. The LED chip is disposed on a die-bonding area and between the packaging layer and the packaging substrate. The packaging layer (300) around the LED chip is configured with a stepped structure, and steps of which are defined as a first step, a second step, until an nth step sequentially in order from top to bottom. Each the step includes a step surface and a vertical surface, and a maximum horizontal distance between the vertical surface of the first step and the LED chip is less than a horizontal distance between the vertical surface of the nth step and the LED chip. The stepped structure reduces a thickness of the packaging layer around a side wall of the LED chip to reduce stress releasing of the packaging layer and increase reliability of the packaging device.

IPC Classes  ?

• H01L 33/54 - Encapsulations having a particular shape

Abstract

The present invention relates to the technical field of semiconductor photoelectric devices, and in particular, to a light-emitting diode and a light-emitting device. To solve the problem that the adhesive force of a metal layer of an existing light-emitting diode on an insulating layer is insufficient, the light-emitting diode comprises: a semiconductor epitaxial laminated layer comprising a first conductive type semiconductor layer, a light-emitting layer and a second conductive type semiconductor layer which are sequentially stacked; an interface transition layer located on the semiconductor epitaxial laminated layer, wherein the interface transition layer comprises an insulating metal oxide or a laminated layer of the insulating metal oxide, and a first insulating layer is provided between the interface transition layer and the semiconductor epitaxial laminated layer; and a metal layer covering part of the surface of the interface transition layer and electrically connected to the semiconductor epitaxial laminated layer. The light-emitting diode provided by the present invention has high reliability.

IPC Classes  ?

• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light-emitting diode (LED) package includes a packaging substrate having a first surface, an LED chip disposed on the first surface, and a light-transmissible unit disposed on the first surface and formed with an indentation defined by an indentation-defining wall which cooperates with the first surface to form a cavity in which the LED chip is enclosed. The indentation-defining wall includes a base part, a peripheral part, and a first connecting part that interconnects the base part and the peripheral part and that includes one of a curved surface, an inclined surface, and a combination thereof. Other two LED packages are also disclosed.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/58 - Optical field-shaping elements

Abstract

A light-emitting device includes a substrate, first and second chips, a first buffer layer, and an encapsulating layer. The substrate includes first and second surfaces opposite to each other. Each of the first and second chips is disposed on the first surface of the substrate, and is formed with top and bottom surfaces opposite to each other and side surfaces that are connected to the top surface and the bottom surface. The first buffer layer is disposed on the top surface of the second chip. The substrate has two edges spaced apart from each other in one of a first direction and a second direction. Each of the first and second chips has a minimum distance distant from one of the two edges in one of the two directions. Another light-emitting device is also disclosed.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/56 - Materials, e.g. epoxy or silicone resin
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

A display apparatus. The display apparatus comprises a TFT substrate (11000); and a light-emitting module (1000), which is arranged on the TFT substrate (11000), wherein the light-emitting module (1000) comprises a plurality of light-emitting elements (200), which comprise a first light-emitting element (201) that emits light of a first wavelength, a second light-emitting element (202) that emits light of a second wavelength, and a third light-emitting element (203) that emits light of a third wavelength, and the voltage of each light-emitting element (200) is greater than or equal to 3 V when a rated current is 1 μA.

IPC Classes  ?

• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 29/786 - Thin-film transistors
• G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes

Abstract

A light-emitting device includes an epitaxial structure that includes a first semiconductor layer, an active layer and a second semiconductor layer. The light-emitting device further has a transparent current spreading unit, a first electrode and a second electrode. The transparent current spreading unit includes a first transparent current spreading layer and a second transparent current spreading layer. The first transparent current spreading layer is doped with aluminum and has a thickness that accounts for 0.5% to 33% of a thickness of the transparent current spreading unit. The second transparent current spreading layer has a thickness greater than that of the first transparent current spreading layer. A light-emitting apparatus includes a circuit control component, and a light source that is coupled to the circuit control component and that includes the aforesaid light-emitting device.

IPC Classes  ?

• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Abstract

A light-emitting diode (LED) device includes a substrate, an LED chip, a light-transmissive element, and a bonding layer. The substrate has a first surface and a second surface opposite to the first surface in a thickness direction. The first surface has a functional region. The LED chip is disposed on the functional region of the first surface of the substrate. The light-transmissive element is disposed on the first surface of the substrate, and covers the LED chip. The bonding layer connects the substrate with the light-transmissive element, and is disposed on the substrate outside the functional region. The LED device has a surrounding surface. Cross sections of the surrounding surface in the thickness direction are straight lines that extend in the thickness direction.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A light-emitting diode includes a semiconductor epitaxial structure that has a first current spreading layer, a first transition layer, a first cladding layer, a second transition layer, a first confinement layer, an active layer, a second confinement layer, a second cladding layer, and a second current spreading layer. The first current spreading layer, the first cladding layer, and the first confinement layer independently have semiconductor materials that are different in an aluminum content. An aluminum content of the first transition layer increases in a direction from the first current spreading layer to the first cladding layer. An aluminum content of the second transition layer decreases in a direction from the first cladding layer to the first confinement layer.

IPC Classes  ?

• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

A light emitting device includes a package substrate, a patterned conductive layer, an LED chip, and an encapsulation layer. The patterned conductive layer is located on top of the package substrate, and has an isolation region that separates the patterned conductive layer into a first region and a second region. The LED chip is located on top of the patterned conductive layer. The encapsulation layer covers the LED chip and the patterned conductive layer. The encapsulation layer forms an optical structure that corresponds to the LED chip in position and that has a lateral curved surface covering a side wall of the LED chip. When light emitted from the LED chip radiates through the optical structure, the light emitting device has a viewing angle exceeding 120°.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/58 - Optical field-shaping elements
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first current spreading layer, a Inx1Ga1-x1As layer, a first cladding layer, an active layer and a second cladding layer disposed sequentially in such order from the first surface to the second surface, wherein, in the Inx1Ga1-x1As layer, 0

IPC Classes  ?

• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

The present invention relates to a light-emitting diode chip, comprising: a semiconductor epitaxial stack layer, having a first surface and a second surface that are opposite to each other, and comprising a first conductive-type semiconductor layer, a second conductive-type semiconductor layer, and a light-emitting layer located between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; and a first contact electrode and a second contact electrode, located on the first surface of the semiconductor epitaxial stack layer, and respectively and electrically connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, wherein the first contact electrode comprises an ohmic contact layer of the first contact electrode and a first electrode barrier layer located above the ohmic contact layer of the first contact electrode, and the second contact electrode comprises an ohmic contact layer of the second contact electrode and a second electrode barrier layer located above the ohmic contact layer of the second contact electrode. The light-emitting diode chip provided by the present invention has high reliability.

IPC Classes  ?

• H01L 33/40 - Materials therefor

Abstract

A light emitting diode device includes an epitaxial layered structure and first and second electrodes that are disposed on the epitaxial layered structure. The second electrode includes a body portion and at least one extending portion connected to the body portion and extending in a direction away from the body portion. The extending portion includes at least one curved section. A projection of the curved section on the epitaxial layered structure includes first and second curved sides that are opposite to each other and that are curved in an identical direction. The first curved side has a first imaginary center of curvature, and the second curved side has a second imaginary center of curvature. A distance between the first imaginary center of curvature and the second imaginary center of curvature is equal to or smaller than 5 μm.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/24 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light-emitting device includes a substrate that has a first surface and a second surface opposite to the first surface. The substrate has a thickness that is smaller than 80 µm, and the second surface has a roughened structure thereon with a surface roughness ranging from 0.5 µm to 1 µm. The light-emitting device further includes a chip unit that is disposed on the first surface of the substrate. A method for manufacturing the light-emitting device includes the steps of: providing an LED wafer that has a substrate and at least one chip unit, the substrate having a first surface and a second surface that is opposite to the first surface, the at least one chip unit being disposed on the first surface of the substrate; and laser processing the substrate for thinning the substrate and forming a roughened structure on the second surface of the substrate.

IPC Classes  ?

• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A light emitting diode includes: a light emitting layer arranged on at least part of a first semiconductor layer, and a second semiconductor layer; a local defect region over a portion of the second semiconductor layer and extending downward to the first semiconductor layer; a metal layer over a portion of the second semiconductor layer; an insulating layer covering the metal layer, the second and first semiconductor layers in the local defect region, with opening structures over the local defect region and the metal layer, respectively; and an electrode structure over the insulating layer and having a first layer and a second layer, and including a first-type electrode region and a second-type electrode region; wherein an upper surface and a lower surface of the first layer are not flat, and a lower surface of the second layer are both flat.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 33/40 - Materials therefor

Abstract

A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.

IPC Classes  ?

• H01L 33/40 - Materials therefor
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/42 - Transparent materials
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light-emitting device includes a substrate and a semiconductor light-emitting stack. The substrate includes an upper surface, a first side surface, and a second side surface adjacent to the first side surface. The semiconductor light-emitting stack includes a first conductivity type semiconductor layer, a light-emitting layer, and a second conductivity type semiconductor layer that are sequentially disposed on the upper surface of the substrate in such order. The first side surface includes X number of first laser inscribed marks, and the second side surface includes Y number of second laser inscribed marks, in which Y>X>0 and Y≥3. A method for manufacturing the light-emitting device is also provided herein.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns

Abstract

A light-emitting device includes a substrate, a semiconductor structure, and an insulating reflective layer. The substrate has an upper surface and a lower surface. The semiconductor structure is disposed on the upper surface of the substrate. A projection of the semiconductor structure on the upper surface of the substrate has an outer periphery spaced apart a distance from an outer periphery of the upper surface of the substrate. The insulating reflective layer covers at least a part of the semiconductor structure and has an extending portion extending outwardly from the semiconductor structure and covering a part of the upper surface of the substrate. A peripheral end of the extending portion of the insulating reflective layer has an inclined lateral surface, and an included angle defined between the inclined lateral surface and the upper surface of the substrate is not less than 60°.

IPC Classes  ?

• H01L 33/42 - Transparent materials
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

A light-emitting epitaxial structure includes an n-type ohmic contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, a p-type GaInP transition layer, a p-type AlxGa(1-x)InP transition unit and a p-type GaP ohmic contact layer that are sequentially disposed in such order, wherein in the p-type AlxGa(1-x)InP transition unit, 0

IPC Classes  ?

• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

A flip-chip light-emitting device includes a light-emitting unit, a first electrode, and a second electrode. The light-emitting unit includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first electrode is disposed on the light-emitting unit and electrically connected to the first type semiconductor layer. The second electrode is disposed on the light-emitting unit and electrically connected to the second type semiconductor layer. The first electrode or the second electrode is free of gold, and includes an aluminum layer and at least one platinum layer disposed on the aluminum layer opposite to the light-emitting unit.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

Abstract

A light-emitting diode (LED) includes a substrate, an epitaxial structure, and first and second electrodes. The substrate has a surface with upper and lower edges, and two opposing side edges. The epitaxial structure is disposed on the surface. The first and second electrodes are disposed on the epitaxial structure. The second electrode includes a main portion and two extension portions. A projection of each of the extension portions on the surface extends in an extension direction away from the lower edge toward a corresponding one of the side edges in such a manner that an included angle between an central axis perpendicular to the bottom edge and a tangent line of any point on the projection of the extension portions on the surface is not greater than 90° and increases along the extension direction.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h2) between the first area and the second area is no greater than 1 μm. A display apparatus and a lighting apparatus are also disclosed.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
• H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Abstract

The present invention provides a high-voltage light-emitting diode, wherein an isolation groove between adjacent sub-chips comprises a first isolation groove and a second isolation groove, and the width of the first isolation groove is greater than that of the second isolation groove. The isolation groove extends in a first direction. The side wall of the first isolation groove extending in a second direction intersecting the first direction is a first side wall, the side wall thereof extending in the first direction and connected to the first side wall is a second side wall, and a region where the first side wall and the second side wall are connected forms an arc-shaped region. A bridging structure between the adjacent sub-chips covers the arc-shaped region, so that the adhesion of the bridging structure is improved and the bridging structure covers the arc-shaped region, thereby ensuring the stability of the bridging structure, making the bridging structure less prone to defects such as cracks or fractures, and improving the reliability of the device. According to the isolation groove structure, especially under the conditions that the thickness of an epitaxial layer is relatively large and the inclination angle of the side wall of a mesa of the epitaxial layer is relatively large, the isolation groove structure of the present invention can particularly enhance the stability of the bridging structure.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

The present invention provides a light-emitting device, comprising: a package substrate, at least one light-emitting diode, an optical element, and an intermediate layer. The intermediate layer is in contact with at least part of an upper surface of the light-emitting diode and at least part of an incident surface of the optical element. The intermediate layer is provided at a gap between the upper surface of the light-emitting diode and the incident surface of the optical element, such that the intermediate layer in in contact with the upper surface of the light-emitting diode and the incident surface of the optical element to ensure that no gap exists between the upper surface of the light-emitting diode and the incident surface of the optical element, thereby avoiding an emitting process of ultraviolet light, emitted from the upper surface of the light-emitting diode, from an optically thinner medium to an optically denser medium, reducing the occurrence of total reflection at an interface, improving the light emitting probability of the upper surface of the light-emitting diode, and thus improving external quantum efficiency of the light-emitting device.

IPC Classes  ?

• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/58 - Optical field-shaping elements

Abstract

A light-emitting diode (LED) chip includes a semiconductor epitaxial structure and a reflective structure. The reflective structure is formed on an upper surface and side surfaces of the semiconductor epitaxial structure. The reflective structure has a reflectance of less than 30% for light having a first wavelength which is different from a wavelength of light emitted from the semiconductor epitaxial structure. A semiconductor light-emitting device including the LED chip, and a display device including a plurality of the LED chips are also disclosed.

IPC Classes  ?

• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

Disclosed in the present invention are a light-emitting diode and a manufacturing method therefor. The manufacturing method comprises the steps of: one, providing an LED wafer, wherein the LED wafer includes a substrate and a light-emitting epitaxial laminated layer, which is located on the upper surface of the substrate, and the light-emitting epitaxial laminated layer includes, starting from one side of the substrate, a first-type semiconductor layer, an active layer and a second-type semiconductor layer; two, defining a cutting channel on an upper surface of the LED wafer, wherein the cutting channel comprises a first cutting direction and a second cutting direction, which are perpendicular to each other; three, providing a laser beam focused inside the substrate, forming X cutting lines on the same section inside the substrate in the first direction, and forming Y cutting lines on the same section inside the substrate in the second direction, wherein y > x > 0 and y ≥ 3; and four, separating, along the cutting channel, the LED wafer into several LED chips.

IPC Classes  ?

• H01L 33/56 - Materials, e.g. epoxy or silicone resin
• B23K 26/38 - Removing material by boring or cutting

Abstract

The present application provides a light-emitting diode and a manufacturing method therefor. The method comprises the steps of: I, providing an LED wafer, the LED wafer comprising a substrate and a light-emitting laminated epitaxial layer located on the upper surface of the substrate, and the light-emitting laminated epitaxial layer comprising a first-type semiconductor layer, an active layer, and a second-type semiconductor layer from the side of the substrate; II, defining a dicing street on the upper surface of the LED wafer; III, dicing along the dicing street of the substrate using laser: focusing the laser on the lower surface of the substrate to form surface holes, and focusing the laser on the interior of the substrate to form internal holes, the diameter of the surface holes being greater than the diameter of the internal holes; and IV, separating the LED wafer into a plurality of LED chips along the dicing street. In the manufacturing method for the light-emitting diode, the diameter of the surface holes formed in the surface of the substrate is greater than the diameter of the internal holes, such that edge/corner chipping during LED splitting can be better controlled, so as to obtain square and complete LED chips.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission

Abstract

An LED light-emitting device, comprising: a package substrate (110), a first LED chip (121), at least one second chip (122), and a package layer (140). A first surface of the package substrate (110) can be defined as an x-direction and a y-direction. The shortest distance between the first LED chip (121) and the edge of the package substrate (110) in the x-direction or the y-direction is greater than the shortest distance between the at least one second chip (122) and the edge of the package substrate (110) in the same direction. A buffer layer (130) is provided on the upper surface of the at least one second chip (122). By means of the arrangement of the buffer layer (130), the stress effect on the second chip (122) can be relieved, thereby reducing the risk of crystal pulling of the second chip (122) and improving the reliability of the LED light-emitting device.

IPC Classes  ?

• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/58 - Optical field-shaping elements

Abstract

A semiconductor light-emitting device includes a lead frame, a light-emitting element, and a reflection layer. The lead frame includes a main body and a side body extending upwardly from the main body. The main body and the side body cooperatively define a receiving space. The side body has an inner surface facing the receiving space, and a first height measured from a surface of the main body. The light-emitting element is disposed on the surface of the main body and in the receiving space. The reflection layer covers at least a part of the inner surface, and has a second height measured from the surface of the main body. The second height is not smaller than 90% of the first height.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H10H 20/856 - Reflecting means
• H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls

Abstract

A light-emitting device (100), comprising: a package substrate (110), the package substrate (110) having a first surface (1101) and a second surface (1102) that are opposite to each other; a vertical resonant cavity surface emitting type laser diode (120) provided on the first surface (1101) of the package substrate (110), the vertical resonant cavity surface emitting type laser diode (120) having a light-emitting surface away from one side of the package substrate (110), the light-emitting surface having a first area (121), and the first area (121) being an area where the vertical resonant cavity surface emitting type laser diode (120) emits a laser beam; and an optical component (140) having an incident surface (1401) and an exit surface (1402) that are opposite to each other, the optical component (140) being provided above the first area (121) of the vertical resonant cavity surface emitting type laser diode (120) such that the light-emitting surface of the vertical resonant cavity surface emitting type laser diode (120) faces the incident surface (1401) of the optical component (140). The maximum distance between the edge of the orthographic projection of the optical component (140) on the second surface (1102) of the package substrate (110) and the edge of the orthographic projection of the first area (121) of the vertical resonant cavity surface emitting type laser diode (120) on the second surface (1102) of the package substrate (110) ranges from 0.05 mm to 0.8 mm, thereby reducing the size of the optical component (140) and reducing package costs.

IPC Classes  ?

• G02B 27/42 - Diffraction optics

Abstract

A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

IPC Classes  ?

• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

An LED packaging device and a preparation method therefor. The packaging device comprises a packaging substrate (100), an LED chip (500), and a packaging layer (300), the LED chip (500) being disposed in a die bonding area (210) of the packaging substrate (100), and being positioned between the packaging layer (300) and the packaging substrate (100); the packaging layer (300) at the periphery of the LED chip (500) is configured to have a step structure (400), the steps in the step structure (400) being defined as a first step, a second step, and an n-th step in order from top to bottom; each step comprises a step surface (410) and a vertical surface (420), and the maximum horizontal distance (D2) between the vertical surface (420) of the first step and the LED chip (500) is less than the horizontal distance (D4) between the vertical surface (420) of the n-th step and the LED chip (500). The packaging layer (300) at the periphery of the LED chip (500) being configured to have a step structure (400) reduces the thickness of the packaging layer (300) at the side wall of the LED chip (500), in order to reduce the stress release of the packaging layer (300) and increase the reliability of the packaging device. In addition, as the thickness of the packaging layer (300) at the side wall of the LED chip (500) is reduced, the packaging layer (300) at the side wall of the LED chip (500) can reduce the absorption of light emitted from the LED chip (500), increasing the light emitting brightness of the LED chip (500).

IPC Classes  ?

• H01L 23/498 - Leads on insulating substrates

Abstract

A flip-chip light emitting device includes a substrate, a light-emitting layer, a bonding layer disposed between the substrate and the light-emitting layer, and a protective insulating layer disposed over the light-emitting layer and the bonding layer. The bonding layer has first and second upper surfaces that respectively have different first and second roughnesses.

IPC Classes  ?

• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present invention provides an LED device and a manufacturing method therefor. The LED device comprises a substrate, an LED chip arranged in a functional area of the substrate, a light-transmitting unit arranged on the substrate and covering the LED chip, and an adhesive layer connecting the substrate and the light-transmitting unit. The sidewalls of the LED device are substantially flush, and the space between a metal strip and a lens unit is uniformly and completely filled with a first part of the adhesive layer without air bubbles or gaps, thus significantly increasing the airtightness of the device; in addition, a second part formed on at least part of the substrate on the outer side of the metal strip can further block water vapor and the like from entering the interior of the device; and the airtightness of the device can be further improved, especially when the gap between the substrate on the outer side of the metal strip and the light-transmitting unit is filled with the second part.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/54 - Encapsulations having a particular shape
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

The present invention provides an LED chip and a manufacturing method therefor. A substrate of the LED chip is thinned by means of a laser, and then the chip is separated by performing invisible cutting. A back surface of the substrate of the LED chip has a roughened structure formed in the process of the laser thinning the substrate. The present invention can solve the problem in existing chemical mechanical polishing processes in which severe warping occurs when the thickness of a transparent substrate is thinned to less than 80 μm and breakage caused by edge chipping occurring; meanwhile, the back surface of the substrate of the LED chip has a roughened structure formed in the process of a laser thinning the substrate, and emergent light can be enhanced and luminance can be improved.

IPC Classes  ?

• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A light-emitting diode (LED) packaging module includes light-emitting units arranged in an array having m row(s) and n column(s), an encapsulating layer, and a wiring assembly, where m and n each independently represents a positive integer. Each of the light-emitting units includes LED chips each including a chip first surface, a chip second surface, a chip side surface, and an electrode assembly disposed on the chip second surface. The encapsulating layer covers the chip side surface and fills a space among the LED chips. The wiring assembly is disposed on the chip second surface and is electrically connected to the electrode assembly.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light-emitting diode (LED) packaging module includes a plurality of LED chips spaced apart from one another, an encapsulating layer that fills in a space among the LED chips, a light-transmitting layer disposed on the encapsulating layer, a wiring assembly disposed on and electrically connected to the LED chips, and an insulation component that covers the encapsulating layer and the wiring assembly. Each of the LED chips includes an electrode assembly including first and second electrodes. The light-transmitting layer includes a light-transmitting layer that has a light transmittance greater than that of the encapsulating layer.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/56 - Materials, e.g. epoxy or silicone resin
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light emitting diode (LED) device includes at least three LED chips spaced apart from one another, an encapsulation layer and a lens. Each of the LED chips is configured to emit light having a respective one of wavelengths. The LED chips cooperate to have a light emitting region. Each LED chip has a first surface, a second surface opposite to the first surface, and a lateral surface that interconnects the first and second surfaces. The encapsulation layer covers the lateral surface of each of the LED chips, and fills gaps between the LED chips. The lens is disposed on the first surface of each of the LED chips, and covers the light emitting region of the LED chips.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/56 - Materials, e.g. epoxy or silicone resin
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light-emitting diode includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack has a first surface and a second surface opposite to each other. The DBR structure is disposed on one of the first surface and the second surface of the semiconductor light-emitting stack, and includes at least one set of first light-transmitting layers and at least one set of second light-transmitting layers stacked on each other in the first direction. The first light-transmitting layers has interface roughness greater than that of the second light-transmitting layers.

IPC Classes  ?

• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape

Abstract

A light-emitting device includes a number (N) of light-emitting units, a number (a) of first metal pads and a number (b) of second metal pads. Each of the light-emitting units includes a number (n) of light-emitting chips each having two distinct terminals, where N and n are integers and N>1, n>≥3. The numbers (a) and (b) are integers and a>1, b>1, and the terminals of each of the light-emitting chips are electrically connected to a unique combination of one of the number (a) of first metal pads and a number (b) of second metal pads, respectively. The numbers (N), (n), (a) and (b) satisfy the equation: a*b=n*N.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A≥1.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/40 - Materials therefor
• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector

Abstract

Provided is a light emitting device. The light emitting device comprises: a package substrate (210) of a plate-like structure having a first surface and a second surface opposite to each other, wherein the first surface is provided with a patterned conductive layer (230), and the patterned conductive layer (230) is divided by a spacing region (231) into at least two at least regions electrically isolated from each other, i.e., a first region (2321) and a second region (2322); a light emitting diode (LED) chip (220) installed on the patterned conductive layer (230) and having an upper surface and a lower surface opposite to each other as well as side walls connecting the upper surface and the lower surface; and a packaging layer (240) covering the LED chip (220) and the patterned conductive layer (230). The thickness of the packaging layer (240) is less than or equal to that of the LED chip (220), an optical structure is formed on a position corresponding to the LED chip (220), and the packaging layer has a curved surface (S242) at the side wall of the LED chip (220).

IPC Classes  ?

• H01L 33/54 - Encapsulations having a particular shape

Abstract

The present invention provides an imprint and transferring method for transferring a light emitting diode. The imprint is used for mass transfer of light emitting diode chiplets, and comprises: a power supply that is internally provided or externally connected, a charge used for providing a selectable electrical property, a first conductive substrate and a second conductive substrate which are oppositely arranged, and an electro-elastic dielectric located between the two and directly connected to the two. When a charge is introduced to the first conductive substrate and the second conductive substrate to generate a voltage, the electro-elastic dielectric has a strain change within an electric field formed by the voltage; the second conductive substrate has a plurality of through holes; an imprint pattern is set by using the through holes, and transfer cost is reduced by using electroactivity of the imprint, thereby improving the reliability and yield of chiplet transfer.

IPC Classes  ?

• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

max), −0.15

IPC Classes  ?

• H01L 33/50 - Wavelength conversion elements
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/56 - Materials, e.g. epoxy or silicone resin

Abstract

A semiconductor light-emitting device includes a semiconductor light-emitting sequence which includes a first conductive type semiconductor layer, a second conductive type semiconductor layer and a light-emitting layer therebetween, a first electrode electrically connected to the first conductive type semiconductor layer, and a second electrode electrically connected to the second conductive type semiconductor layer. The first conductive type semiconductor layer includes an aluminum gallium indium phosphorus window layer as an ohmic contact layer forming contact between the first electrode and the first conductive type semiconductor layer.

IPC Classes  ?

• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/40 - Materials therefor

Abstract

A light-emitting diode, which at least comprises: a semiconductor epitaxial stack which is provided with a first surface and a second surface that are opposite one another; a DBR reflective layer (108), which is disposed above the second surface of the semiconductor epitaxial stack, and comprises M groups of material layer pairs composed by alternately stacking a types of material layers having different refractive indices, wherein 2≤a≤6. Said diode is characterized in that: there are N groups of material layer pairs among the M groups of material layer pairs of the DBR reflective layer (108), the roughness of the interface between the a types of material layers in the N groups of material layer pairs is greater than the roughness of the interface between the a types of material layers in the remaining (M-N) groups of material layer pairs, and M>N≥1. By means of roughening the interface between the material layers within the DBR reflective layer (108), the light-emitting efficiency can be increased. Meanwhile, the adhesion between the material layers of the DBR reflective layer (108) and between the DBR reflective layer (108) and a substrate (101) can be improved, the phenomena of cutting, back side chipping, and thrust peeling are ameliorated, and the product yield is improved.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.

IPC Classes  ?

• H01L 33/46 - Reflective coating, e.g. dielectric Bragg reflector
• H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/40 - Materials therefor

Abstract

A light emitting diode (LED) package includes a substrate, a metal stage, at least one LED chip and a packaging material. The substrate has an super surface, and a lower surface opposite to the upper surface. The metal stage is formed on the upper surface of the substrate, and has a lumpy structure. The LED chip is mounted on the metal stage. The packaging material covers the LED chip, the metal stage and the substrate. The packaging material and the lumpy structure of the metal stage are engaged with each other.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/52 - Encapsulations

Abstract

A light-emitting device includes a lead frame, a light-emitting diode (LED) chip, and an encapsulant. The LED chip is disposed on the lead frame, and includes a substrate, a semiconductor light-emitting unit disposed on a surface of the substrate, and a first electrode and a second electrode, which are disposed on the surface of the substrate, and which are located outwardly of the semiconductor light-emitting unit. The first and second electrodes are electrically connected to a lower surface of the semiconductor light-emitting unit, and are respectively connected to a first wiring bonding region and a second wiring bonding region on the lead frame. The encapsulant encapsulates the LED chip on the lead frame.

IPC Classes  ?

• H01L 33/60 - Reflective elements
• H01L 33/50 - Wavelength conversion elements
• H01L 33/54 - Encapsulations having a particular shape
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light-emitting packaging device includes a substrate, a light-emitting diode (LED) chip, an optical element, and a covering member. The LED chip is disposed on the substrate. The optical element is spacedly disposed on the LED chip opposite to the substrate, and has an upper surface and a lower surface that are respectively distal from and proximal to the LED chip. The covering member is made from a fluorine-containing resin, and is configured to cover the LED chip and at least a portion of the upper surface of the optical element.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• C09D 127/12 - Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogenCoating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/56 - Materials, e.g. epoxy or silicone resin
• H01L 33/58 - Optical field-shaping elements
• H01L 33/60 - Reflective elements

Abstract

Provided are a light-emitting diode and a manufacturing method thereof, comprising: a luminescent epitaxial layer, comprising a first semiconductor layer (110), a light-emitting layer (120) and a second semiconductor layer (130) from bottom to top in sequence; a transparent dielectric layer (200), at least formed on the second semiconductor layer (130), the transparent dielectric layer (200) has a platform (210) and a series of openings (220); the transparent dielectric layer (200) has an ohmic contact layer (310) in the opening (220), a transition layer (320) is provided between the ohmic contact layer (310) and the second semiconductor layer (130).

IPC Classes  ?

• H01L 33/40 - Materials therefor
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof

Abstract

Disclosed is a light-emitting diode chip. A first electrode and a second electrode of the light-emitting diode chip face towards a front side. A back side of a first conduction layer is directly connected to a front side of a base. A portion of the first conduction layer is at least exposed from the front side to be used for the arrangement of the first electrode. A portion of a second conduction layer is at least exposed from the front side to be used for the arrangement of the second electrode. The exposed first conduction layer and the exposed second conduction layer are of equal height. An insulating layer extending from a recess covers a back side of the second conductive layer.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• H01L 33/64 - Heat extraction or cooling elements

Abstract

A laser diode packaging structure includes a lead frame and a laser chip. The lead frame includes a frame body that has a front side and a back side opposite to the front side, a front circuit layer and a back circuit layer that are respectively disposed on the front and back sides, and an inner circuit layer that is disposed inside the frame body. The inner circuit layer includes first and second circuit connecting units, each of which has at least one first conductive via to electrically connect to the front circuit layer, and at least one second conductive via to electrically connect to the back circuit layer. The laser chip is mounted on and electrically connected to the front circuit layer, and is configured to emit a laser beam.

IPC Classes  ?

• H01S 5/0235 - Method for mounting laser chips
• H01S 5/0232 - Lead-frames
• H01S 5/042 - Electrical excitation
• H01S 5/0233 - Mounting configuration of laser chips
• H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups

Abstract

A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer arranged on at least part of the first semiconductor layer, a second semiconductor layer arranged on the light emitting layer; a first metal layer arranged on at least part of the first semiconductor layer and in contact with the first semiconductor layer; an insulating layer covered a surface of the light emitting structure; and an electrode layer arranged on the insulating layer and having at least one region that is not overlapped with the first metal layer or the second metal layer in a vertical direction.

IPC Classes  ?

• H01L 29/40 - Electrodes
• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 33/40 - Materials therefor

Abstract

Provided the present invention are an LED packaging device and a fabrication method therefor. The method comprises: providing a substrate which has an upper surface and a lower surface; forming at least one metal boss on the upper surface of the substrate, a first spacing being provided between the metal bosses; disposing an inverted LED chip on the metal boss; using a packaging colloid to cover the LED chip, the metal boss and the substrate, wherein the metal boss is provided with a patterned structure, and the packaging colloid and the metal boss form a buckling connection. The buckling connection adds an adhesive force to the packaging colloid and the substrate, and effectively reduces the amount of deformation when the bottom part of the packaging colloid is cut, thereby ensuring that the packaging colloid and substrate near a die-fixing region of the metal boss are tightly bound, and will not be stripped off due to cutting. During a usage process, a packaging body is effectively prevented from being stripped off due to the different thermal expansion deformations of the substrate and the packaging colloid; and problems of the packaging body such as the vibration and shedding of the packaging colloid during a transportation or transfer process are effectively prevented.

IPC Classes  ?

• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/54 - Encapsulations having a particular shape

Abstract

A UV LED device includes a base, a lens disposed on the base, an adhesive unit, an LED chip unit, and an encapsulating member. The adhesive unit has multiple layers and is connected between the base and the lens such that the base, the lens and the adhesive unit cooperatively define an enclosed space. The LED chip unit is disposed in the enclosed space. The encapsulating member is disposed in the enclosed space, and encapsulates the LED chip unit. The encapsulating member is made of a material the same as a material of at least one layer of the adhesive unit.

IPC Classes  ?

• H01L 33/58 - Optical field-shaping elements
• H01L 33/56 - Materials, e.g. epoxy or silicone resin

Abstract

A light-emitting diode (LED) package assembly, comprising a plurality of light-emitting units arranged in a matrix of m×n, wherein m and n are integers, and m×n≥4; each light-emitting unit comprises a first LED chip, a second LED chip, and a third LED chip; each LED chip (100) comprises a first surface and a second surface opposite to each other, and a side surface connected between the first surface and the second surface, and an electrode group (110) formed on the second surface; the electrode group (110) comprises a first electrode (111) and a second electrode (112); and the first surface is a light-exiting surface; a package layer (200) filling a gap between the LED chips (100) and covering side walls of the LED chips (100); and a wiring layer formed above second surfaces of the plurality of LED chips (100).

IPC Classes  ?

• H01L 33/54 - Encapsulations having a particular shape
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/52 - Encapsulations

Abstract

A light emitting diode packaging assembly. The packaging assembly comprises: a plurality of LED chips (100) spaced apart from each other, each LED chip (100) comprising a first surface (S21) and a second surface (S22) that are opposite to each other, a side surface (S24) connected between the first surface (S21) and the second surface (S22), and an electrode group (110) formed on the second surface (S22), the first surface (S21) being a light exit surface; a packaging layer (200) filling the gaps between the LED chips (100), covering the side walls of the LED chips (100), and exposing the electrode groups (110) of the LED chips (100); wiring layers (310, 330) formed on the second surfaces (S22) of the LED chips (100), and each having a first surface and a second surface that are opposite to each other, and a side surface connected between the first surface and the second surface, the first surface being connected to the electrode groups (110) of the LED chips (100); and an insulating layer (500) covering the surface of the packaging layer (200), covering the wiring layers (310, 330), and comprising one or more layers of structures, at least one of which is a transparent layer.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A flip-chip light emitting device includes a transparent substrate, an epitaxial light-emitting structure, a transparent bonding layer interposed between the transparent substrate and the light-emitting structure, and a protective insulating layer disposed over the light-emitting structure and the bonding layer. The transparent bonding layer has a smaller-thickness section that has a first contact surface for the protective insulating layer to be disposed thereover, and a larger-thickness section that has a second contact surface meshing with and bonded to a roughened bottom surface of the light-emitting structure. The first contact surface is smaller in roughness than the second contact surface. A method for producing the device is also disclosed.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
• H01L 33/30 - Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

XYXYXYY, and N≥3; each of the light-emitting units comprises a LED chips (100); each LED chip (100) comprises a first electrode and a second electrode on the same side; an encapsulation layer (200) for filling gaps between the LED chips (100) and covering sidewalls of the LED chips (100); wiring layers (310-330) formed on a second surface of the plurality of LED chips (100) and used for electrically connecting the plurality of light-emitting units to form an N-in-one light-emitting module; and pads formed on the wiring layers (310-330), wherein the number of pads is P = Nx + Ny × a. According to the encapsulation assembly, the number of pads of the encapsulation assembly can be reduced to the greatest possible extent, thereby facilitating wiring, and being beneficial for a patch at an application end so as to reduce the risk of a short circuit.

IPC Classes  ?

• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

An LED packaging device includes a frame including a bottom wall having a bottom surface and a surrounding wall extending upwardly from the bottom wall, at least one LED chip, a plurality of spaced-apart reflectors and a packaging body. The bottom and surrounding walls cooperatively define a mounting space. The surrounding wall has an internal side surface facing the mounting space and a top surface facing away from the bottom surface. The LED chip is disposed on the bottom surface and is received in the mounting space. Each of the reflectors is disposed on a peripheral region of the bottom surface. The packaging body covers the LED chip and the reflectors, such that the LED chip is sealed inside the mounting space.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/60 - Reflective elements

Abstract

A light-emitting device and a manufacturing method, and a display screen and lighting equipment comprising said light-emitting device, the light-emitting device comprising: at least three LED chips (20) spaced apart from one another, the at least three LED chips (20) being configured to emit light of respective wavelengths, and the maximum diameter D of the light-emitting area thereof being less than 1 mm; an encapsulation layer (30) covering the side surface of the at least three LED chips (20) and filling the gaps between the at least three LED chips (20); and a lens (10) arranged above a first surface of the at least three LED chips (20) and covering the light-emitting area of the at least three LED chips (20). The present light-emitting device does not have a traditional carrier substrate or bracket and is secured by means of the encapsulation layer (30), and therefore does not need to undergo die bonding by means of die bonding glue, such that the distance between the chips (20) can be reduced to less than 30 μm, better controlling the uniformity of the light emission angle of the light-emitting device. The lens (10) being arranged above the light-emitting area of the light-emitting device enables the light to be irradiated in a more concentrated manner onto the desired area of application.

IPC Classes  ?

• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/56 - Materials, e.g. epoxy or silicone resin
• H01L 33/58 - Optical field-shaping elements

Abstract

ABCABBAA≥1.

IPC Classes  ?

• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls

Abstract

A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A light emitting device includes at least one light emitting and connecting unit that includes an epitaxial layer structure and a metallic connecting layer structure, and an insulating substrate that has a main substrate body and first and second contact members. The connecting layer structure interconnects the epitaxial layer structure and the main substrate body, and is completely plane at least right under the epitaxial layer structure. The contact members extend from a first surface to a second surface on the main substrate body, and are disposed outside an imaginary projection of the epitaxial layer structure on the main substrate body. The first contact member is electrically connected with the connecting layer structure. Alight emitting apparatus including the device is also disclosed.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
• H01L 33/22 - Roughened surfaces, e.g. at the interface between epitaxial layers
• H01L 33/40 - Materials therefor
• H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
• H01L 33/50 - Wavelength conversion elements