Abstract

Provided is a single-crystal growth apparatus for growing a single crystal by irradiation with heating laser light. Provided is a growth apparatus provided with: a raw material rod extending along a first direction, the vertical direction being the first direction; and M laser irradiation heads for radiating M heating laser beams to the raw material rod, the laser irradiation heads being provided in a radial pattern with the raw material rod at the center thereof; the irradiation intensity distribution of the M heating laser beams in a two-dimensional plane orthogonal to the optical axes of the heating laser beams having heating laser beams having an irradiation intensity distribution asymmetrical in the first direction, a second irradiation intensity distribution in a second direction orthogonal to the first direction having a substantially uniform irradiation intensity, and the irradiation intensity gradually decreasing downward and the irradiation intensity steeply decreasing upward in the irradiation intensity distribution in the first direction.

IPC Classes  ?

• C30B 13/24 - Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
• C30B 13/30 - Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fieldsControlling the section of the crystal