The present invention relates to a method for drying a wafer (W, W1, W2) which is in a bath (1), and to an undoped and doped wafer (W, W1, W2) according to the invention, as well as to a device for drying wafers (W, W1, W2). It is ensured that the travel distance of the wafers (W, W1, W2) is as short as possible, only a few drops remain stuck on the wafer (W, W1, W2), and the wafer (W, W1, W2) thus has an as homogeneous as possible oxide surface, and the number/area of the defective surfaces due to drops remaining stuck after the Marangoni drying process can be minimised. As a result, there is little, or better, no contact between the wafer (W) and the rack (3; 31, 32) / guide device (3a. 3a'; 3b, 3b'; 3c, 3c') on passage through the water surface. As a result, the constant overflow can be maintained, i.e. preferably the water level does not drop as long as the wafers (W) (and ideally also the rack (3; 31, 32)) are being dried.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
2.
DEVICE AND METHOD FOR MANUFACTURING AIII-BV - COMPOUND SEMICONDUCTOR SINGLE CRYSTALS AS WELL AS AIII-BV - COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND WAFER
A device (1) for manufacturing an AlII-BV - compound semiconductor single crystal (4) from a melt (5) of a raw material, comprises a crucible (6) for receiving a melt, wherein the crucible (7) has a central axis (M) and a crucible wall (7) having a shell-shaped outer face, which faces away from the central axis (M) in a direction radially outwards, and a component (10) substantially surrounding the crucible (6) and opposing the crucible wall (7) in a distance by an inner face facing the outer face, wherein the crucible wall (7) is provided in a relationship with the component (10) surrounding the crucible (6) that is substantially a thermal radiation exchange. The outer face of the crucible wall (7) has a first emissivity (ε1) and the inner face of the opposite component (10) surrounding the crucible (6) has a second emissivity (ε2), wherein the first emissivity and second emissivity (ε1, ε2) indicate how much radiation is emitted from the crucible wall (7) and the component (10) surrounding the crucible, respectively, as compared with an ideal radiant heater. The outer face of the crucible wall (7) and the inner face of the component (10) surrounding the crucible are at least partially provided each by a coating (8a, 8b) which define the first emissivity (ε1) and the second emissivity (ε2), respectively, such that the first emissivity and/or the second emissivity each amount to a value of 0.1 or less, respectively. Such configuration allows to manufacture wafers, in particular from GaAs or InP, whose annular edge area with distances between 1-3 mm from the wafer edge is available for an epitaxial step following manufacture for the purpose of subsequent device production.
A III-V-, IV-IV- or II-VI-compound single crystal comprising III-, IV- or II-precipitates and/or unstoichiometrical III-V-, IV-VI-, or II-VI-inclusions, wherein concentration of the respective precipitates and/or inclusions is no more than 1×104 cm−3
A device (1′, 1″, 1′″) for manufacturing III-V-crystals and wafers (14) manufactured therefrom, which are free of residual stress and dislocations, from melt (16) of a raw material optionally supplemented by lattice hardening dopants comprises a crucible (2′, 2″, 2′″) for receiving the melt (16) having a first section (4′, 4″) including a first cross-sectional area and a second section (6′) for receiving a seed crystal (12) and having a second cross-sectional area, wherein the second cross-sectional area is smaller than the first cross-sectional area and the first and second sections are connected with each other directly or via third section (8, 8′) which tapers from the first section towards the second section, in order to allow a crystallization starting from the seed crystal (12) within the directed temperature field (T) into the solidifying melt. The first section (4′, 4″) of the crucible (2′, 2″, 2′″) has a central axis (M), and the second section (6′) is arranged being offset (v) with regard to the central axis (M) of the first section (4′, 4″).
B32B 3/00 - Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
2 having a deviation from the average measurement signal in elipsometric lateral substrate mapping with an optical surface analyzer of at least ±0.05%.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
6.
DEVICE AND METHOD OF MANUFACTURING AIII-BV-CRYSTALS AND SUBSTRATE WAFERS MANUFACTURED THEREOF FREE OF RESIDUAL STRESS AND DISLOCATIONS
A device (1', 1'', 1''') for manufacturing lll-V-crystals and wafers (14) manufactured therefrom, which are free of residual stress and dislocations, from melt (16) of a raw material optionally supplemented by lattice hardening dopants comprises a crucible (2', 2'', 2''') for receiving the melt (16) having a first section (4', 4'') including a first cross-sectional area and a second section (6') for receiving a seed crystal (12) and having a second cross-sectional area, wherein the second cross-sectional area is smaller than the first cross-sectional area and the first and second sections are connected with each other directly or via third section (8, 8') which tapers from the first section towards the second section, in order to allow a crystallization starting from the seed crystal (12) within the directed temperature field (T) into the solidifying melt. The first section (4', 4'') of the crucible (2', 2'', 2''') has a central axis (M), and the second section (6') is arranged being offset (v) with regard to the central axis (M) of the first section (4', 4'').
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
The present invention encompasses a method of selectively separating Ga from wastewaters with the aid of a dialysis method. This exploits the particular complexation behaviour of Ga, which forms an unstable tetrahalo complex. This forms only in the case of a sufficiently high halide concentration. Since the halide concentration becomes lower across the membrane, the Ga-tetrahalo complex breaks down in the membrane, as a result of which the Ga is retained. Other metals such as In and Fe do not show this behaviour, and therefore the tetrahalo complexes of these metals can pass through the membrane and hence can be selectively separated off.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
12.
Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity
The present invention relates to a novel provided gallium arsenide substrates as well as the use thereof. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, by way of example by means of ellipsometric lateral substrate mapping for optical contact-free quantitative characterization.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated
13.
Growth of A-B crystals without crystal lattice curvature
The present invention relates to a process for the production of III-V-, IV-IV- or II-VI-compound semiconductor crystals. The process starts with providing of a substrate with optionally one crystal layer (buffer layer). Subsequently, a gas phase is provided, which comprises at least two reactants of the elements of the compound semiconductor (II, III, IV, V, VI) which are gaseous at a reaction temperature in the crystal growth reactor and can react with each other at the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, wherein the concentration is selected that high, that crystal formation is possible, wherein by an adding or adjusting of reducing agent and of co-reactant, the activity of the III-, IV- or II-compound in the gas phase is decreased, so that the growth rate of the crystals is lower compared to a state without co-reactant. Therein, the compound semiconductor crystal is deposited at a surface of the substrate, while a liquid phase can form on the growing crystal.
Further, auxiliary substances may be added, which can also be contained in the liquid phase, but is only incorporated in low amounts into the compound semiconductor crystal.
Herein, 3D- and 2D-growth modes can be controlled in a targeted manner.
The addition of auxiliary substances and the presence of a liquid phase favour these means.
The product is a single crystal of the respective III-V-, IV-IV- or II-VI-compound semiconductor crystal, which, compared to respectively conventional compound semiconductor crystals has a lower concentration of inclusions or precipitates and nevertheless has no or only a very low curvature.
TECHNISCHE UNIVERSITÄT BERGAKADEMIE FREIBERG (Germany)
Inventor
Reinhold, Thomas
Eichler, Stefan
Weinert, Berndt
Zeidler, Oliver
Stelter, Michael
Abstract
The present invention encompasses a method of selectively separating Ga from wastewaters with the aid of a dialysis method. This exploits the particular complexation behaviour of Ga, which forms an unstable tetrahalo complex. This forms only in the case of a sufficiently high halide concentration. Since the halide concentration becomes lower across the membrane, the Ga-tetrahalo complex breaks down in the membrane, as a result of which the Ga is retained. Other metals such as In and Fe do not show this behaviour, and therefore the tetrahalo complexes of these metals can pass through the membrane and hence can be selectively separated off.
The invention relates to a method for producing III-V-, IV- IV- or II-VI- compound semiconductor crystals. The method starts with the provision of a substrate having optionally one crystal layer (buffer layer). This is followed by the provision of a gas phase which has at least two reactants of elements for the compound semiconductor (II, III, IV, V, VI), the reactants being gaseous at a reaction temperature in the crystal growth reactor and being capable of reacting together under the selected reactor conditions. The ratio of the concentrations of two of the reactants is adjusted such that the compound semiconductor crystal can crystallize from the gas phase, a concentration being chosen that is sufficiently high to facilitate crystal formation and the activity of the III-, IV- or II-compound being reduced in the gas phase by the addition or adjustment of reducing agent and co-reactant, such that the growth rate of the crystal is lower compared to a state without the co-reactant. The compound semiconductor crystal is deposited on a surface of the substrate, whilst a liquid phase can form on the growing crystal. In addition, auxiliary substances can be added which can also be contained in the liquid phase but which are only incorporated in negligible amounts into the compound semiconductor crystal. This allows 3D and 2D growth modes to be controlled selectively. The addition of auxiliary substances and the presence of a liquid phase promote these measures. The product is a single crystal of a III-V-, IV-IV- or II-VI-compound semiconductor crystal, which contains lower concentrations of inclusions or precipitates compared to conventional compound semiconductor crystals and which nevertheless has no or only a negligible curvature.
The present invention relates to a novel process for producing a surface-treated gallium arsenide substrate as well as novel provided gallium arsenide substrates as such as well as the use thereof. The improvement of the process according to the invention is based on a particular final surface treatment with an oxidation treatment of at least one surface of the gallium arsenide substrate in dry condition by means of UV radiation and/or ozone gas, a contacting of the at least one surface of the gallium arsenide substrate with at least one liquid medium and a Marangoni drying of the gallium arsenide substrate. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, specifically by means of ellipsometric lateral substrate mapping for the optical contact-free quantitative characterization.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated
17.
Method for producing III-N single crystals, and III-N single crystal
The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
19.
METHOD FOR ROUNDING EDGES OF SOLID PARTS GENERATED FROM SOLID STARTING MATERIAL AND SOLID PRODUCTS PRODUCED BY THIS METHOD
The invention relates to a method for rounding edges of solid wafers and addresses the problem of providing a method for rounding a peripheral edge of the wafer that is already present, for avoiding the creation of sharp edges after a process step in which the wafer is divided, and for minimising the effort involved in edge rounding in one working process. The problem is solved by generating at least one peripheral recess (7) on an outer surface of the cylindrical solid starting material (1) or on the lateral surfaces of the cuboid solid starting material (1) such that, at all its points, the recess is equally spaced to a base surface or top surface of the solid starting material (1).
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
20.
PROCESS FOR PRODUCING A GALLIUM ARSENIDE SUBSTRATE, GALLIUM ARSENIDE SUBSTRATE, USE THEREOF, AND METHOD OF CHARACTERIZING THE SURFACE PROPERTIES OF A GALLIUM ARSENIDE SUBSTRATE
The present invention relates to a novel process for producing a surface-treated gallium arsenide substrate as well as novel provided gallium arsenide substrates as such as well as the use thereof. The improvement of the process according to the invention is based on a particular final surface treatment with an oxidation treatment of at least one surface of the gallium arsenide substrate in dry condition by means of UV radiation and/or ozone gas, a contacting of the at least one surface of the gallium arsenide substrate with at least one liquid medium and a Marangoni drying of the gallium arsenide substrate. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, specifically by means of ellipsometric lateral substrate mapping for the optical contact-free quantitative characterization.
Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
An arrangement for manufacturing a crystal of the melt of a raw material comprises: a furnace having a heating device with one or more heating elements, which are configured to generate a gradient temperature field directed along a first direction, a plurality of crucibles for receiving the melt, which are arranged within the gradient temperature field side by side, and a device for homogenizing the temperature field within a plane perpendicular to the first direction in the at least two crucibles. The arrangement further has a filling material inserted within a space between the crucibles wherein the filling shows an anisotropic heat conductivity. Additionally or alternatively, the arrangement may comprise a device for generating magnetic migration fields, both the filling material having the anisotropic heat conductivity and the device for generating magnetic migration fields being suited to compensate or prevent the formation of asymmetric phase interfaces upon freezing of the raw melt.
C30B 17/00 - Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
C30B 21/02 - Unidirectional solidification of eutectic materials by normal casting or gradient freezing
C30B 28/06 - Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
H01L 29/36 - Semiconductor bodies characterised by the concentration or distribution of impurities
−3 in the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.
B32B 5/16 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer formed of particles, e.g. chips, chopped fibres, powder
24.
METHOD FOR PRODUCING III-N SINGLE CRYSTALS, AND III-N SINGLE CRYSTAL
The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.
The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crytal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.
An apparatus for evaporating a metal melt (6, 106) comprises a first crucible or crucible region (26, 103) in which the metal melt (6, 106) is accommodated, which comprises at least one opening from which the vaporized metal can escape, a second crucible or crucible region (25, 102) in which a susceptor material (5, 105) is accommodated and a heating source (10) which is arranged so that it heats the susceptor material (5, 105) in the second crucible or crucible region (25, 102) by the action of electromagnetic induction but does not heat or only inconsequentially heats the metal melt (6, 106) in the first crucible or crucible region (26, 103). The first crucible or crucible region (26, 103) and the second crucible or crucible region (25, 102) are thermally coupled so that the metal melt (6, 106) can attain a desired temperature.
C23C 14/26 - Vacuum evaporation by resistance or inductive heating of the source
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
27.
Device and method of evaporating a material from a metal melt
A device for evaporating a metal melt, the device comprising a first crucible or crucible portion operative to receive the metal melt comprising at least one aperture, from which the evaporated metal may pass off, a second crucible or crucible portion operative to receive a susceptor material, comprising an electromagnetic radiation source, which is arranged such that it can heat susceptor material comprised in the second crucible or crucible portion through incident electromagnetic induction, wherein it does not or only negligibly heats the metal melt in the first crucible or crucible portion, wherein the first crucible or crucible portion and the second crucible or crucible portion are thermally coupled, such that the metal melt can attain a desired temperature.
C23C 14/26 - Vacuum evaporation by resistance or inductive heating of the source
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapor phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.
A single crystal having a technologically generated cleavage surface that extends along a natural crystallographic cleavage plane with an accuracy of less than |0.001°| when measured over a length relevant for the technology of the single crystal or over each of a plurality of surface areas extending in the direction of separation and having a length ≧2 mm within the technologically relevant surface area.
3) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
A method for producing a semipolar semiconductor crystal comprising a group III nitride (III-N) comprises the following steps: preparing a starting substrate (2) comprising sapphire (Al2O3) and having a first surface (3), which is formed by a crystal plane of the family {11-23}; and epitaxially growing (17, 19) a semipolar crystal layer (18) comprising a group III nitride (III-N) on the starting substrate above the first surface (3) to form a second surface (22), which is formed by a crystal plane of the family {10‑11} in the group III nitride. GaN, in particular, is appropriate as the group III nitride. The following combinations of initial substrate (sapphire) and grown crystal (e.g. GaN) are proposed, in particular: {20-21}-GaN on {22-43}-sapphire, {10-12}-GaN on {11-26}-sapphire. The crystal orientation of GaN produced in the present case can be generalized to families of the form {20‑2/}, where / is equal to a natural number 1, 2, 3, 4, etc. However, {11-21}-GaN on {10-11}-sapphire, too, is also encompassed here by the proposal.
An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.
The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the material for forming the mask layer consists at least partially of tungsten silicide nitride or tungsten silicide and wherein the semiconductor substrate self-separates from the starting substrate without further process steps.
A process for preparing smoothened III-N, in particular smoothened III-N substrate or III-N template, wherein III denotes at least one element of group III of the Periodic System, selected from Al, Ga and In, utilizes a smoothening agent comprising cubic boron nitride abrasive particles. The process provides large-sized III-N substrates or III-N templates having diameters of at least 40 mm, at a homogeneity of very low surface roughness over the whole substrate or wafer surface. In a mapping of the wafer surface with a white light interferometer, the standard deviation of the rms-values is 5% or lower, with a very good crystal quality at the surface or in surface-near regions, measurable, e.g., by means of rocking curve mappings and/or micro-Raman mappings.
H01L 29/20 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
35.
Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
−3 in the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.
B32B 5/16 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer formed of particles, e.g. chips, chopped fibres, powder
36.
METHOD FOR PRODUCING DOPED GALLIUM ARSENIDE SUBSTRATE WAFERS WITH A LOW OPTICAL ABSORPTION COEFFICIENT
A method is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently making the gallium arsenide melt set, wherein the gallium arsenide melt contains an excess of gallium in comparison with the stoichiometric composition, and wherein a boron concentration of at least 5x1017 cm-3 is provided in the melt or in the crystal obtained. The crystal obtained in this way is distinguished by a unique combination of low dislocation density, high conductivity and nevertheless excellent, very low optical absorption, in particular in the near infrared range.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
A method for dividing monocrystals is provided, comprising the following steps: preadjusting the crystallographic cleavage plane (2') with respect to the cleaving device; predetermining a stress intensity (K) via stress fields (3', 4'); for the predetermined stress fields (3', 4') determining the energy release rate G(α) during crack growth as a function of the possible angle of deflection (α) from the cleavage plane; and generating the stress fields (3', 4'); controlling or regulating the stress fields (3', 4') and/or the preadjustment in such a way that crack propagation takes place in the monocrystal, wherein G (0) ᡶ 2 &ggr;e(0) and at the same time at least one of the conditions (2.1) or (2.2) is additionally satisfied, where the symbols are explained in the text.
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
39.
Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
−2 is carried out in the device of the invention. SI GaAs wafers produced have an at least 25% increased characteristic fracture strength (Weibull distribution), an improved radial macroscopic and mesoscopic homogeneity and an improved quality of the mechano-chemically polished surface. The characteristic fracture strength is higher than 1900 MPa.
H01L 21/8252 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
40.
Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal
An arrangement for manufacturing a crystal of the melt of a raw material comprises: a furnace having a heating device with one or more heating elements, which are configured to generate a gradient temperature field directed along a first direction, a plurality of crucibles for receiving the melt, which are arranged within the gradient temperature field side by side, and a device for homogenizing the temperature field within a plane perpendicular to the first direction in the at least two crucibles. The arrangement further has a filling material inserted within a space between the crucibles wherein the filling shows an anisotropic heat conductivity. Additionally or alternatively, the arrangement may comprise a device for generating magnetic migration fields, both the filling material having the anisotropic heat conductivity and the device for generating magnetic migration fields being suited to compensate or prevent the formation of asymmetric phase interfaces upon freezing of the raw melt.
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B 21/06 - Unidirectional solidification of eutectic materials by pulling from a melt
C30B 27/02 - Single-crystal growth under a protective fluid by pulling from a melt
C30B 28/10 - Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
41.
ARRANGEMENT AND METHOD FOR PRODUCING A CRYSTAL FROM THE MELT OF A RAW MATERIAL AND MONOCRYSTAL
The invention relates to an arrangement (1) for producing a crystal from the melt (16) of a raw material, comprising: an oven having a heating device comprising one or more heating elements (20, 21), the heating device being equipped to generate a temperature field (T) in the oven directed in a first direction (18), a plurality of crucibles (14) for receiving the melt disposed adjacent to each other in the directed temperature field, and a device (21a, 21b, 24, 26) for homogenizing the temperature field in a plane perpendicular to the first direction in the at least two crucibles. The device can be a filler material (24) introduced into the spaces between the crucibles and having anisotropic heat conductivities in order to preferably induce radially directed heat transfer. In addition or alternatively, the devices can also be for generating traveling magnetic fields (21a, 21b) acting together with the filler material (24).
A process and a device for producing crystalline silicon, particularly poly- or multi-crystalline silicon are described, wherein a melt of a silicon starting material is formed and the silicon melt is subsequently solidified in a directed orientation. A phase or a material is provided in gaseous, fluid or solid form above the melt in such a manner, that a concentration of a foreign atom selected from oxygen, carbon and nitrogen in the silicon melt and thus in the solidified crystalline silicon is controllable, and/or that a partial pressure of a gaseous component in a gas phase above the silicon melt is adjustable and/or controllable, the gaseous component being selected from oxygen gas, carbon gas and nitrogen gas and gaseous species containing at least one element selected from oxygen, carbon and nitrogen. The formation of impurity compound precipitations or inclusions, in particular of silicon carbide affecting electric properties of solar cells, can be effectively inhibited and prevented according to the present invention.
The invention relates to the production of a compound semiconductor material, preferably a III-N bulk crystal, or a III-N layer, by means of hydride gas phase epitaxy (HVPE) in a reactor, in which a flow profile represented by local mass flow rates is formed in the reactor in a mixture of carrier gases. The mixture can include one or more reaction gases in the direction toward a substrate. For this purpose, a concentration of hydrogen critical for the reaction and precipitation of the reaction gases is adjusted on the surface of the substrate independently from the flow profile formed in the reactor.
The invention relates to a novel method for producing (Al,Ga)N and AlGaN monocrystals by means of a modified HVPE method, in addition to high-quality (Al,Ga)N and AlGaN monocrystals. The III-V compound semiconductors produced by said method are used in optoelectronics, especially for blue, white and green LEDs, and for high-performance, high-temperature and high-frequency field effect transistors.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
The invention relates to a novel method for producing (AI, Ga)InN and AIGaInN monocrystals by means of a modified HVPE method, in addition to (AI, Ga)InN and AIGaInN bulk crystals of high quality, especially high homogeneity. The III-V compound semiconductors produced by means of the inventive method are used in optoelectronics, especially for blue, white and green LEDs, and for high-performance, high-temperature and high-frequency field effect transistors.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances oxides
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
C30B 9/00 - Single-crystal growth from melt solutions using molten solvents
C30B 11/00 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 17/00 - Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
C30B 21/02 - Unidirectional solidification of eutectic materials by normal casting or gradient freezing
C30B 28/06 - Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
47.
Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.
C30B 25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
48.
METHOD FOR PRODUCING A DOPED III-N SOLID CRYSTAL AND A FREE-STANDING DOPED III-N SUBSTRATE, AND DOPED III-N SOLID CRYSTAL AND FREE-STANDING DOPED III-N SUBSTRATE
The invention describes methods for producing a doped III-N solid crystal, where III denotes at least one element of main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N solid crystal is deposited on a substrate or template in a reactor, and wherein at least one dopant is fed into the reactor in a mixture with at least one group III material. In this way, it is possible to obtain III-N solid crystals and III-N single-crystal substrates singulated therefrom, each having a highly homogeneous distribution of the dopant in the growth direction and also in the growth plane perpendicular thereto. It is correspondingly possible to provide a highly homogeneous distribution of charge carriers and/or of electrical resistivity in the growth direction and also in the growth plane perpendicular thereto. Furthermore, it is possible to obtain a very good crystal quality.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
A process for preparing smoothened III-N, in particular smoothened III-N substrate or III-N template, wherein III denotes at least one element of group III of the Periodic System, selected from Al, Ga and In, utilizes a smoothening agent comprising cubic boron nitride abrasive particles. The process provides large-sized III-N substrates or III-N templates having diameters of at least 40 mm, at a homogeneity of very low surface roughness over the whole substrate or wafer surface. In a mapping of the wafer surface with a white light interferometer, the standard deviation of the rms-values is 5% or lower, with a very good crystal quality at the surface or in surface-near regions, measurable, e.g., by means of rocking curve mappings and/or micro-Raman mappings.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
The invention relates to a method for producing smooth III-N, particularly smooth III-N substrate or III-N template, III meaning at least one element from group III of the periodic table selected among Al, Ga, and In. A smoothing means comprises cubic boron nitride as an abrasive particle. Said method makes it possible to create large-area III-N substrates or III-N templates that have a minimum diameter of 40 mm with a homogeneous very low surface roughness across the entire surface of the substrate or wafer. For example, the standard deviation of the rms values is 5 percent or less when the wafer surface is mapped by means of a white light interferometer. Said property can be obtained along with very good crystal quality on the surface or in areas near the surface, said quality being measured by means of rocking curve mapping and/or micro-Raman mapping, for example.
The invention describes a process for producing a III -N bulk crystal, wherein III denotes at least one element selected from group III of the periodic system, selected from Al, Ga and In, wherein the III -N bulk crystal is grown by vapor phase epitaxy on a substrate, and wherein the growth rate is measured in real-time. By actively measuring and controlling the growth rate in situ, i.e. during the epitaxial growth, the actual growth rate can be maintained essentially constant. In this manner, III-N bulk crystals and individualized III-N single crystal substrates separated therefrom, which respectively have excellent crystal quality both in the growth direction and in the growth plane perpendicular thereto, can be obtained.
Embodiments of the invention relate to a process for producing a III-N bulk crystal, wherein III denotes at least one element selected from group III of the periodic system, selected from Al, Ga and In, wherein the III-N bulk crystal is grown by vapor phase epitaxy on a substrate, and wherein the growth rate is measured in real-time. By actively measuring and controlling the growth rate in situ, i.e. during the epitaxial growth, the actual growth rate can be maintained essentially constant. In this manner, III-N bulk crystals and individualized III-N single crystal substrates separated therefrom, which respectively have excellent crystal quality both in the growth direction and in the growth plane perpendicular thereto, can be obtained.
In a process for forming a mask material on a III-N layer, wherein III denotes an element of the group III of the Periodic Table of Elements, selected from Al, Ga and In, a III-N layer having a surface is provided which comprises more than one facet. Mask material is selectively deposited only on one or multiple, but not on all facets. The deposition of mask material may be particularly carried out during epitaxial growth of a III-N layer under growth conditions, by which (i) growth of at least a further III-N layer selectively on a first type or a first group of facet(s) and (ii) a deposition of mask material selectively on a second type or a second group of facet(s) proceed simultaneously. By the process according to the invention, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.
The invention relates to a free-standing semi-conductor substrate and to a method and a masking layer which is used to produce a free-standing semi-conductor substrate, wherein the semi-conductor substrate detaches itself automatically from the output substrate without using additional process steps. The inventive method for producing a semi-conductor substrate comprises the following steps: a starting substrate is prepared, a masking layer having a plurality of openings is applied to the masking layer, at least one semi-conductor substrate is grown and the masking layer is laterally overgrown by at least one semi-conductor material, and is subsequently, cooled by the starting substrate, the masking layer and the semi-conductor substrate. The material, which forms the masking layer, is at least partially made of wolfram silicide nitride or wolfram silicide, and it separates from the semi-conductor substrate and the starting substrate during growth of at least one semi-conductor substrate or whilst cooling and a free-standing semiconductor substrate is obtained. The inventive masking layer for producing a free-standing semi-conductor substrate is made, at least partially, of wolfram silicide nitride or wolfram silicide.
A wire saw (1; 100) for cutting a workpiece includes a device (21, 22, 24, 27) for setting, controlling and/or maintaining a predetermined or desired water content in at least part of the gaseous medium that contacts the slurry. With the wire saw according to the invention and the process carried out using this wire saw, it is possible to achieve consistently good surface properties of the resulting wafers over a prolonged period of use of a slurry.
B28D 1/08 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by sawing with saw blades of endless cutter-type, e.g. chain saws, strap saws
56.
Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
−2 is carried out in the device of the invention. SI GaAs wafers produced have an at least 25% increased characteristic fracture strength (Weibull distribution), an improved radial macroscopic and mesoscopic homogeneity and an improved quality of the mechano-chemically polished surface. The characteristic fracture strength is higher than 1900 MPa.
C30B 23/00 - Single-crystal growth by condensing evaporated or sublimed materials
C30B 25/00 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
B32B 3/00 - Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shapeLayered products comprising a layer having particular features of form
B32B 17/10 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
57.
Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
A method and a device for cutting a workpiece (1, 21) in a wire saw is described, wherein a workpiece (1, 21) is fixed in a wire saw by means of a mounting beam (2, 22). In the method according to the invention, the generation of a mark or a step on the cutting area along the cutting slit at the transition from the workpiece to the mounting beam (2, 22) is moved further to the edge of the cutting area or is avoided entirely. Therefore, the workpiece (1, 21) is held during the cutting operation in the wire saw by a mounting beam (2, 22) such that while one of the two piercing points (9; 29) lies on the surface of the workpiece (1, 21) and while simultaneously the other (10; 30) of the two piercing points (9, 10; 29, 30) lies on the surface of the mounting beam (2; 22), the piercing point lying on the surface of the workpiece is the entry side piercing point.
B28D 1/08 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by sawing with saw blades of endless cutter-type, e.g. chain saws, strap saws
