A photovoltaic device includes a support layer; a first layer comprising cadmium, tellurium and copper and being of n-type; a second layer comprising cadmium, tellurium and copper and being of p-type; and a transparent conductive oxide layer. A method for making a photovoltaic device includes providing a stack comprising a cadmium and tellurium comprising layer and a copper comprising layer on the cadmium and tellurium comprising layer; and thermally annealing the stack to form a first layer and a second layer each comprising cadmium, tellurium and copper, the first layer being of n-type, the second layer being of p-type.
H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/068 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
2.
Finger structures protruding from absorber layer for improved solar cell back contact
Thin film photovoltaic devices that include a transparent substrate; a transparent conductive oxide layer on the transparent substrate; a n-type window layer on the transparent conductive oxide layer; a p-type absorber layer on the n-type window layer; and, a back contact on the p-type absorber layer are provided. The p-type absorber layer comprises cadmium telluride, and forms a photovoltaic junction with the n-type window layer. Generally, the p-type absorber layer defines a plurality of finger structures protruding from the p-type absorber layer into the back contact. The finger structures can have an aspect ratio of about 1 or greater and/or can have a height that is about 20% to about 200% of the thickness of the p-type absorber layer. Methods of forming such finger structures protruding from a back surface of the p-type absorber layer are also provided.
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0445 - PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
3.
PHOTOVOLTAIC DEVICES AND METHODS FOR MAKING THE SAME
A photovoltaic device includes a support layer; a first layer comprising cadmium, tellurium and copper and being of n-type; a second layer comprising cadmium, tellurium and copper and being of p-type; and a transparent conductive oxide layer. A method for making a photovoltaic device includes providing a stack comprising a cadmium and tellurium comprising layer and a copper comprising layer on the cadmium and tellurium comprising layer; and thermally annealing the stack to form a first layer and a second layer each comprising cadmium, tellurium and copper, the first layer being of n-type, the second layer being of p-type.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes: (i) a compound including magnesium and a metal species, wherein the metal species includes tin, indium, titanium, or combinations thereof; or (ii) a metal alloy including magnesium; or (iii) a compound comprising magnesium and fluorine; or (iv) combinations thereof. Method of making a photovoltaic device is also presented.
A method of making a photovoltaic device is presented. The method includes disposing a capping layer on a transparent conductive oxide layer, wherein the capping layer includes elemental magnesium, a magnesium alloy, a binary magnesium oxide, or combinations thereof. The method further includes disposing a window layer on the capping layer; and forming an interlayer between the transparent conductive oxide layer and the window layer, wherein the interlayer includes magnesium.
A photovoltaic device is presented. The photovoltaic device includes a first semiconductor layer, a second semiconductor layer, and an interlayer disposed between the first semiconductor layer and the second semiconductor layer, wherein the interlayer includes gadolinium. Methods of making photovoltaic devices are also presented.
An apparatus and a method for detecting defects within a photovoltaic module are provided. To detect defects within the photovoltaic module, light from a light source is directed towards the photovoltaic module. The light generates a voltage within each solar cell of the photovoltaic module. The generated voltages are measured and compared in order to detect defects within the solar cells of the photovoltaic module.
Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/34 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups , and , with or without impurities, e.g. doping materials
9.
SPATIALLY DISTRIBUTED CDS IN THIN FILM PHOTOVOLTAIC DEVICES AND THEIR METHODS OF MANUFACTURE
Thin film photovoltaic devices are provided. The device includes a transparent substrate; a transparent conductive oxide layer on the transparent substrate; an n-type window layer on the transparent conductive oxide layer, an absorber layer on the n-type window layer, and a back contact layer on the absorber layer. The n-type window layer includes a plurality of nanoparticles spatially distributed within a medium, with the nanoparticles comprising cadmium sulfide. In one embodiment, the medium has an optical bandgap that is greater than about 3.0 eV (e.g., includes a material other than cadmium sulfide). Methods are also provided for such thin film photovoltaic devices.
Methods are generally provided for forming a conductive oxide layer on a substrate by sputtering a target to deposit a transparent conductive oxide layer (e.g., comprising comprises cadmium, tin, and oxygen) on the substrate; positioning an anneal surface in close proximity to the transparent conductive oxide layer (e.g., about 3 cm or less); and, annealing the transparent conductive oxide layer while the anneal surface is in close proximity to the transparent conductive oxide layer (e.g., at an anneal temperature of about 500 C to about 700 C) to create a localized cadmium vapor between the transparent conductive oxide layer and the anneal surface. The anneal surface can include a material reactive with oxygen at the anneal temperature. Apparatus is also provided for annealing a thin film layer on a substrate.
A method for forming a layer on a substrate comprises steps of: placing a source of a semiconductor polycrystalline or amorphous material in contact with a substrate; creating a temperature difference between the source and the substrate during a time interval in which the source is characterized by one or more temperatures in a first temperature range having a first average temperature and the substrate is characterized by one or more temperatures in a second temperature range having a second average temperature wherein the first average temperature is greater than the second average temperature and less than the melting temperature or minimum softening temperature of the semiconductor polycrystalline or amorphous material, thereby transferring at least a portion of the material from the source to the substrate; and separating the source from the substrate to provide a coated substrate comprising a layer of the semiconductor polycrystalline or amorphous material.
H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
12.
CONVEYOR ASSEMBLY WITH GEARED, REMOVABLE ROLLERS FOR A VAPOR DEPOSITION SYSTEM
A conveyor assembly for conveying substrates through a vapor deposition system is disclosed. The conveyor assembly may generally include a first carriage rail disposed on a drive side of the conveyor assembly and a second carriage rail disposed on an opposite side of the conveyor assembly. Each of the carriage rails may define a plurality of roller positions, with a plurality of the roller positions on the first carriage rail being configured as drive positions. The conveyor assembly may also include a drive pulley positioned at each drive position. Each drive pulley may be configured to rotationally drive a drive device. In addition, the conveyor assembly may include a plurality of rollers extending between the carriage rails at the roller positions. The rollers disposed at the drive positions may be configured to engage the drive devices.
Methods for forming a thin film layer on a substrate are provided. The method can include: rotating a cylindrical target about a center axis; ejecting atoms from the sputtering surface with a plasma; transporting a substrate across the plasma at a substantially consistent speed; and depositing the atoms ejected from the sputtering surface onto the substrate to form a thin film layer. The cylindrical target generally includes a source material forming a sputtering surface about the cylindrical target, with the source material having a plurality of first areas and a plurality of second areas. Each first area includes a first compound, and each second area includes a second compound, while the first compound is different than the second compound.
Cylindrical sputtering targets, along with methods of their manufacture and use, are provided. The cylindrical sputtering target includes a tubular member having a length in a longitudinal direction and defining a tube surface, and a source material positioned about the tube surface of the tubular member and forming a sputtering surface about the tubular member. The source material generally defines an inner surface opposite of the sputtering surface and non-bonded to the tube surface of the tubular member. The inner surface of the source material is mechanically engaged to the tube surface of the tubular member, and/or the source material can include a first cylindrical ring directly stacked onto a second cylindrical ring with the first cylindrical ring being mechanically engaged to the second cylindrical ring.
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
15.
CYLINDRICAL TARGET HAVING AN INHOMOGENEOUS SPUTTERING SURFACE FOR DEPOSITING A HOMOGENEOUS FILM
Cylindrical sputtering targets are provided. The cylindrical sputtering target can include a tubular member having a length in a longitudinal direction and defining a tube surface. A source material is positioned about the tube surface of the tubular member and forms a sputtering surface about the tubular member. The source material generally includes a plurality of first areas and a plurality of second areas, each first area comprising a first compound and each second area comprising a second compound that is different than the first compound.
A method for processing a semiconductor assembly is presented. The method includes: (a) contacting at least a portion of a semiconductor assembly with a chalcogen source, wherein the semiconductor assembly comprises a semiconductor layer comprising a semiconductor material disposed on a support; (b) introducing a chalcogen from the chalcogen source into at least a portion of the semiconductor material; and (c) disposing a window layer on the semiconductor layer after the step (b).
Methods for forming a back contact on a thin film photovoltaic device are provided. The method can include: applying a conductive paste onto a surface defined by a p-type absorber layer (of cadmium telluride) of a p-n junction; and, curing the conductive paste to form a conductive coating on the surface such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium but is substantially consumed during curing. The conductive paste can comprises a conductive material, an optional solvent system, and a binder. Thin film photovoltaic devices are also provided, such as those that have a conductive coating that is substantially free from an acid.
H01L 23/485 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
Methods for preparing an exposed surface of a p-type absorber layer of a p-n junction for coupling to a back contact in the manufacture of a thin film photovoltaic device are provided. The method can include: applying a treatment solution onto the exposed surface defined by the p-type absorber layer of cadmium telluride; and annealing the device with the p-type absorber layer in contact with the treatment solution to form a tellurium-enriched region in the p-type absorber layer at the exposed surface. The treatment solution comprises a chlorinated compound component that is substantially free from copper, a copper-containing metal salt, and a solvent.
Thin film photovoltaic devices that include a direct connection to at least one lead bar extending through a connection aperture defined in the encapsulation substrate to electrically connect to an underlying conductive ribbon are provided. The photovoltaic device can include: a transparent substrate; a plurality of photovoltaic cells; a conductive ribbon electrically connected to a photovoltaic cell; an encapsulation substrate laminated to the transparent substrate such that the plurality of photovoltaic cells and the conductive ribbon are positioned between the transparent substrate and the encapsulation substrate; and a lead bar extending through a connection aperture defined in the encapsulation substrate and electrically connected to the conductive ribbon.
Thin film photovoltaic devices that include a direct connection to at least one lead bar extending through a connection aperture defined in the encapsulation substrate to electrically connect to an underlying conductive ribbon are provided. The photovoltaic device can include: a transparent substrate; a plurality of photovoltaic cells; a conductive ribbon electrically connected to a photovoltaic cell; an encapsulation substrate laminated to the transparent substrate such that the plurality of photovoltaic cells and the conductive ribbon are positioned between the transparent substrate and the encapsulation substrate;'and a lead bar extending through a connection aperture defined in the encapsulation substrate and electrically connected to the conductive ribbon.
Thin film photovoltaic devices that include a direct connection to at least one lead bar extending through a connection aperture defined in the encapsulation substrate to electrically connect to an underlying conductive ribbon are provided. The photovoltaic device can include: a transparent substrate; a plurality of photovoltaic cells; a conductive ribbon electrically connected to a photovoltaic cell; an encapsulation substrate laminated to the transparent substrate such that the plurality of photovoltaic cells and the conductive ribbon are positioned between the transparent substrate and the encapsulation substrate; and a lead bar extending through a connection aperture defined in the encapsulation substrate and electrically connected to the conductive ribbon.
Photovoltaic devices are provided that include a transparent superstrate; a transparent conductive oxide on the transparent superstrate; an n-type window layer on the transparent superstrate; a p-type absorber layer on the n-type window layer; and an inert conductive paste layer on the back surface of the p-type absorber layer. The p-type absorber layer includes cadmium telluride, and defines a back surface positioned opposite from the n-type window layer that is tellurium enriched. The inert conductive paste layer is substantially free from an acid or acid generator. Methods are also generally provided of forming such a back contact.
Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.
A photovoltaic device is presented. The device includes an intermediate layer disposed between an absorber layer and a back contact layer. The intermediate layer includes a metal or metalloid of Group 15 and oxygen. Method for making a photovoltaic device is also presented.
Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.
Methods for isolating thin film photovoltaic cells on a superstrate are provided. The method includes focusing a laser beam onto a first surface of the superstrate to remove a thin film stack positioned on a second surface of the superstrate, and directing the laser beam across the first surface of the superstrate to form an isolation scribe that is substantially free from the thin film stack. The thin film stack can include a transparent conductive oxide layer on the second surface, an n-type window layer on the transparent conductive oxide layer, and an absorber layer on the n-type window layer. The laser beam can have a laser wavelength of about 370 nm or less, and/or can have a laser wavelength such that the transparent conductive oxide layer absorbs at least about 80% of the laser beam at the laser wavelength.
A system for vapor deposition of a thin film layer on a photovoltaic module substrate is provided. The system includes a vacuum chamber having a pre-heat section, a vapor deposition apparatus, and a cool-down section; and a conveyor system operably disposed within said vacuum chamber and configured for conveying the substrates in a serial arrangement from said pre-heat section and through said vapor deposition apparatus at a controlled constant linear speed. The vapor deposition apparatus is configured for depositing a thin film of a sublimed source material onto an upper surface of the substrates as the substrates are continuously conveyed by said conveyor system through said vapor deposition apparatus.
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.
C23C 16/54 - Apparatus specially adapted for continuous coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23F 1/00 - Etching metallic material by chemical means
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/22 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
30.
Dynamic system for variable heating or cooling of linearly conveyed substrates
A system is provided for heating or cooling discrete, linearly conveyed substrates having a gap between a trailing edge of a first substrate and a leading edge of a following substrate in a conveyance direction. The system includes a chamber, and a conveyor operably configured within the chamber to move the substrates through at a conveyance rate. A plurality of individually controlled temperature control units, for example heating or cooling units, are disposed linearly within the chamber along the conveyance direction. A controller is in communication with the temperature control units and is configured to cycle output of the temperature control units from a steady-state temperature output as a function of the spatial position of the conveyed substrates within the chamber relative to the temperature control units so as to decrease temperature variances in the substrates caused by movement of the substrates through the chamber.
F27B 9/06 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and chargeFurnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity electrically heated
31.
Sputtering cathode having a non-bonded semiconducting target
A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering.
x, where x is 3 or 4) on a transparent conductive oxide layer and depositing a cadmium telluride layer on the mixed layer. The transparent conductive oxide layer is on a glass substrate.
Methods for simultaneously making quantum efficiency measurements at multiple points in a photovoltaic cell are provided. A light beam (e.g., monochromatic light) can be directed to a first beam splitter, where it is split into a first reflected portion and a first passthrough portion such that the first reflected portion is directed to a first point on the photovoltaic cell. The first reflected portion can then be chopped at a first frequency between the first beam splitter and the first point. The first passthrough portion of the light beam can be reflected at a second beam splitter to a second point on the photovoltaic cell. The second reflected portion can then be chopped at a second frequency between the second beam splitter and the second point. Finally, the quantum efficiency can be calculated at both the first point and the second point. Systems are also generally provided for simultaneously making quantum efficiency measurements at multiple points in a photovoltaic cell.
Thin film photovoltaic devices are provided that generally include a transparent conductive oxide layer on the glass, a multi-layer n-type stack on the transparent conductive oxide layer, and an absorber layer (e.g., a cadmium telluride layer) on the multi-layer n-type stack. The multi-layer n-type stack generally includes a first layer (e.g., a cadmium sulfide layer) and a second layer (e.g., a mixed phase layer). The multi-layer n-type stack can, in certain embodiments, include additional layers (e.g., a third layer, a fourth layer, etc.). Methods are also generally provided for manufacturing such thin film photovoltaic devices.
Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film layer form a p-n junction. An anisotropic conductive layer is applied on the p-type thin film layer, and includes a polymeric binder and a plurality of conductive particles. A metal contact layer can then be positioned on the anisotropic conductive layer.
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
36.
Methods and apparatus for reducing variations in the laser intensity during scribing a photovoltaic device
Methods are generally provided of reducing speckle of a laser beam from a laser source guided through an optical waveguide. The method includes vibrating an optical waveguide at a first point along the optical waveguide at a first frequency (e.g., having a range of about 20 kHz to about 20 GHz) for a certain distance (e.g., a distance of about 0.1 mm to about 5 cm), and directing the laser beam out of the optical waveguide from the laser source to a target. Such methods are particularly useful for scribing a thin film layer on a photovoltaic module (e.g., a cadmium telluride-based thin film photovoltaic device). Fiber optic laser systems are also generally provided for reducing speckle of a laser beam from a laser source guided through an optical waveguide.
Apparatus is generally provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic module substrate. The apparatus includes a distribution plate disposed below the distribution manifold and at a defined distance above a horizontal conveyance plane of an upper surface of a substrate conveyed through the apparatus. The distribution plate defines a pattern of passages therethrough configured to provide greater resistance to the flow of sublimated source vapors at a first longitudinal end than a second longitudinal end. A process for vapor deposition of a sublimated source material to form thin film on a photovoltaic module substrate is also provided via distributing the sublimated source material onto an upper surface of the substrates through a distribution plate positioned between the upper surface of the substrate and the receptacle.
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
C23F 1/00 - Etching metallic material by chemical means
38.
Methods of temporally varying the laser intensity during scribing a photovoltaic device
Methods for laser scribing a film stack including a plurality of thin film layers on a substrate are provided. A pulse of a laser beam is applied to the film stack, where the laser beam has a power that varies as a function of time during the pulse according to a predetermined power cycle. For example, the pulse can have a pulse lasting about 0.1 nanoseconds to about 500 nanoseconds. This pulse of the laser beam can be repeated across the film stack to form a scribe line through at least one of the thin film layers on the substrate. Such methods are particularly useful in laser scribing a cadmium telluride thin-film based photovoltaic device.
Thin film photovoltaic devices are generally provided. The device can include a transparent conductive oxide layer on a glass substrate, an n-type thin film layer on the transparent conductive layer, and a p-type thin film layer on the n-type layer. The n-type thin film layer and the p-type thin film layer form a p-n junction. An anisotropic conductive layer is applied on the p-type thin film layer, and includes a polymeric binder and a plurality of conductive particles. A metal contact layer can then be positioned on the anisotropic conductive layer.
Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C. to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C. to about 700° C. The method of forming the TCO layer can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device, further including forming a cadmium sulfide layer over the transparent conductive oxide layer and forming a cadmium telluride layer over the cadmium sulfide layer.
A method for selectively depositing a thin film structure on a substrate is provided. The method includes providing a process gas to a surface of the substrate and directing concentrated electromagnetic energy from a source of energy to at least a portion of the surface. The process gas is decomposed onto the substrate to form a selectively deposited thin film structure.
C23C 16/48 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
C23C 16/04 - Coating on selected surface areas, e.g. using masks
42.
Vapor deposition apparatus and process for continuous indirect deposition of a thin film layer on a substrate
An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A deposition head is configured for sublimating a source material supplied thereto. The sublimated source material condenses onto a transport conveyor disposed below the deposition head. A substrate conveyor is disposed below the transport conveyor and conveys substrates in a conveyance path through the apparatus such that an upper surface of the substrates is opposite from and spaced below a lower leg of the transport conveyor. A heat source is configured adjacent the lower leg of the transport conveyor. The source material plated onto the transport conveyor is sublimated along the lower leg and condenses onto to the upper surface of substrates conveyed by the substrate conveyor.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
In one aspect of the present invention, a reflector for use in a solar collector will be described. The reflector includes a thin film reflective coating that is positioned on a layer. For example, the layer may be a substrate that physically supports the reflective coating or a protective layer. There are multiple spaced apart pinning regions that are distributed through an interface between the layer and the thin film reflective coating. The pinning regions locally anchor the reflective coating to the layer. Some aspects of the present invention relate to the use of pinning regions in other types of optical or electrical components.
B32B 7/14 - Interconnection of layers using interposed adhesives or interposed materials with bonding properties applied in spaced arrangements, e.g. in stripes
B32B 7/10 - Interconnection of layers at least one layer having inter-reactive properties
A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.
An apparatus and associated method of operation is provided for vapor deposition of a sublimated source material, such as CdTe, as a thin film on discrete photovoltaic (PV) module substrates that are conveyed in a continuous, non-stop manner through the apparatus. The apparatus includes a deposition head configured for receipt and sublimation of the source material. The deposition head has a distribution plate at a defined distance above a horizontal conveyance plane of an upper surface of the substrates conveyed through a deposition area within the apparatus. The sublimated source material moves through the distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry and exit slots that are defined by transversely extending entrance and exit seals. The seals are disposed at a gap distance above the upper surface of the substrates that is less than the distance or spacing between the upper surface of the substrates and the distribution plate. The seals have a ratio of longitudinal length (in the direction of conveyance of the substrates) to gap distance of from about 10:1 to about 100:1.
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
46.
Methods for high-rate sputtering of a compound semiconductor on large area substrates
C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
C23C 14/32 - Vacuum evaporation by explosionVacuum evaporation by evaporation and subsequent ionisation of the vapours
C25B 9/00 - Cells or assemblies of cellsConstructional parts of cellsAssemblies of constructional parts, e.g. electrode-diaphragm assembliesProcess-related cell features
C25B 11/00 - ElectrodesManufacture thereof not otherwise provided for
Systems and processes for treatment of a cadmium telluride thin film photovoltaic device are generally provided. The systems can include a treatment system and a conveyor system. The treatment system includes a preheating section, a treatment chamber, and an anneal oven that are integrally interconnected within the treatment system. The conveyor system is operably disposed within the treatment system and configured for transporting substrates in a serial arrangement into and through the preheat section, into and through the treatment chamber, and into and through the anneal oven at a controlled speed. The treatment chamber is configured for applying a material to a thin film on a surface of the substrate and the anneal oven is configured to heat the substrate to an annealing temperature as the substrates are continuously conveyed by the conveyor system through the treatment chamber.
One aspect of the present invention provides a device that includes a substrate; a first semiconducting layer; a transparent conductive layer; a transparent window layer. The transparent window layer includes cadmium sulfide and oxygen. The device has a fill factor of greater than about 0.65. Another aspect of the present invention provides a method of making the device.
Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 10° C. to about 100° C. A cap layer including cadmium sulfide can be deposited directly on the transparent conductive oxide layer. The transparent conductive oxide layer can be annealed at an anneal temperature from about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device.
Concentrating solar collector systems that utilize a concentrating reflector to direct incident solar radiation to a solar receiver are described. In one aspect, the reflective surface is arranged to direct light to the receiver in a non-imaging manner in which the solar rays reflected from the opposing edges of the reflective surface are generally directed towards a central portion of the solar receiver. Rays reflected from selected central portions of the reflective surface are directed closer to the edges of the receiver than the solar rays reflected from the edges of the reflective surface. The described reflectors are generally intended for use in solar collector systems that track movements of the sun along at least one axis.
F24J 2/38 - employing tracking means (F24J 2/02, F24J 2/06 take precedence;rotary supports or mountings therefor F24J 2/54;supporting structures of photovoltaic modules for generation of electric power specially adapted for solar tracking systems H02S 20/32)
H01L 31/0232 - Optical elements or arrangements associated with the device
51.
Modular system and process for continuous deposition of a thin film layer on a substrate
A process and associated system for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates individually into the vacuum chamber. The substrates are pre-heated as they are conveyed through the vacuum chamber, and are then conveyed in serial arrangement through a vapor deposition apparatus in the vacuum chamber wherein a thin film of a sublimed source material is deposited onto an upper surface of the substrates. The substrates are conveyed through the vapor deposition apparatus at a controlled constant linear speed such that leading and trailing sections of the substrate in a conveyance direction are exposed to the same vapor deposition conditions within the vapor deposition apparatus. The vapor deposition apparatus may be supplied with source material in a manner so as not to interrupt the vapor deposition process or non-stop conveyance of the substrates through the vapor deposition apparatus.
A system and associated process for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates individually into the vacuum chamber. A conveyor system is operably disposed within the vacuum chamber and is configured for conveying the substrates in a serial arrangement through a vapor deposition apparatus within the vacuum chamber at a controlled constant linear speed. A post-heat section is disposed within the vacuum chamber immediately downstream of the vapor deposition apparatus in the conveyance direction of the substrates. The post-heat section is configured to maintain the substrates conveyed from the vapor deposition apparatus in a desired heated temperature profile until the entire substrate has exited the vapor deposition apparatus.
An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
54.
Solar collector with reflector having compound curvature
The present invention relates to a solar energy collector suitable for use in a solar energy collection system. The solar energy collection system includes the collector, a stand that supports the collector and a tracking system that causes the collector to track movements of the sun along at least one axis. The collector includes one or more reflector panels, one or more solar receivers, and a support structure that physically supports the reflector panels and solar receivers. Some designs involve a reflector panel that has a compound curvature. That is, the reflector panel has a convex shape along one direction and a concave shape in another direction. In another aspect of the invention, the collector includes a space frame support structure.
The present invention relates to a solar energy collector suitable for use in a solar energy collection system. The solar energy collection system includes the collector, a stand that supports the collector and a tracking system that causes the collector to track movements of the sun along at least one axis. The collector includes one or more reflector panels, one or more solar receivers, and a support structure that physically supports the reflector panels and solar receivers. Some designs involve a reflector panel that has a compound curvature. That is, the reflector panel has a convex shape along one direction and a concave shape in another direction. In another aspect of the invention, the collector includes a space frame support structure.
A process for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer is provided. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.
An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is also provided.
In one aspect of the present invention, a solar energy collection system that includes multiple longitudinally adjacent collectors is described. The collectors are coupled end to end to form a collector row. The collector row extends along a longitudinal axis and is arranged to rotate about a pivot axis to track the sun in at least one dimension. Each collector includes a reflector, one or more solar receivers and a support structure. The support structure includes a tube assembly that underlies the reflector. The tube assemblies of the collector row are arranged end to end along the longitudinal axis. There is a space between the tube assemblies of adjacent collectors in the collector row, where the reflectors of the adjacent collectors extend beyond the underlying tube assemblies to form a substantially continuous reflective surface over the space. A coupling device is positioned in the space between the tube assemblies. The coupling device connects and helps to rotate the tube assemblies of the adjacent collectors. Some embodiments relate to various types of coupling devices and collector arrangements.
H02N 6/00 - Generators in which light radiation is directly converted into electrical energy (solar cells or assemblies thereof H01L 25/00, H01L 31/00)
H01L 31/042 - PV modules or arrays of single PV cells
F24J 2/38 - employing tracking means (F24J 2/02, F24J 2/06 take precedence;rotary supports or mountings therefor F24J 2/54;supporting structures of photovoltaic modules for generation of electric power specially adapted for solar tracking systems H02S 20/32)
F24J 2/10 - having reflectors as concentrating elements
G01C 21/02 - NavigationNavigational instruments not provided for in groups by astronomical means
G01C 21/24 - NavigationNavigational instruments not provided for in groups specially adapted for cosmonautical navigation
G01J 1/20 - Photometry, e.g. photographic exposure meter by comparison with reference light or electric value intensity of the measured or reference value being varied to equalise their effects at the detector, e.g. by varying incidence angle
Concentrating solar collector systems that utilize a concentrating reflector to direct incident solar radiation to a solar receiver are described. In one aspect, the reflective surface is arranged to direct light to the receiver in a non-imaging manner in which the solar rays reflected from the opposing edges of the reflective surface are generally directed towards a central portion of the solar receiver. Rays reflected from selected central portions of the reflective surface are directed closer to the edges of the receiver than the solar rays reflected from the edges of the reflective surface. The described reflectors are generally intended for use in solar collector systems that track movements of the sun along at least one axis.
F24J 2/38 - employing tracking means (F24J 2/02, F24J 2/06 take precedence;rotary supports or mountings therefor F24J 2/54;supporting structures of photovoltaic modules for generation of electric power specially adapted for solar tracking systems H02S 20/32)
In one embodiment, a concentrating solar energy collector, which tracks movements of the sun along one axis has a reflective trough, at least one solar receiver mounted above the reflective trough and configured so that incident sunlight striking the reflective trough is directed toward the at least one solar receiver, and a reflector extender coupled to a first end of the reflective trough and configured to capture and direct incident sunlight towards the at least one solar receiver. In another embodiment, one or more extended end reflectors is attached with a reflective trough of a solar energy collector.
H01L 31/052 - Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
A solar energy collector suitable for use in a solar energy collection system that tracks movements of the sun along at least one axis may have a plurality of reflector panels, a support structure that supports the reflector panels in a manner that defines a pair of adjacent reflector troughs, each trough having a base, a pair of reflective side walls and a trough aperture suitable for receiving incident sunlight during operation of the solar energy collection system, a frame that is coupled to the support structure near the bases of the troughs to define a closed reflector support truss framework in cooperation with the support structure, wherein the reflector support truss framework is positioned behind the reflector troughs such that the reflector support truss framework does not shadow the reflector panels during normal operation of the solar energy collector, and a plurality of solar receivers.
H02N 6/00 - Generators in which light radiation is directly converted into electrical energy (solar cells or assemblies thereof H01L 25/00, H01L 31/00)
H01L 31/042 - PV modules or arrays of single PV cells
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
A solar receiver can have a base plate having a first surface and a second surface, a plurality of solar cells positioned over and supported by the first surface of the base plate, each solar cell having a cell face suitable for receiving solar radiation that faces away from the base plate, the plurality of solar cells being arranged in at least one string having a string axis, and a plurality of fins attached directly to the second surface of the base plate, wherein the fins extend outwardly from the second surface of the base plate in a direction that is generally perpendicular to both the string axis and the solar cell faces.
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 31/042 - PV modules or arrays of single PV cells
H02N 6/00 - Generators in which light radiation is directly converted into electrical energy (solar cells or assemblies thereof H01L 25/00, H01L 31/00)
A solar energy collector is provided having at least one reflector panel, a plurality of solar receivers, and a support structure that supports the at least one reflector panels in a manner that defines a reflector troughs having a trough base, a pair of reflective side walls and a trough aperture suitable for receiving incident sunlight during operation of the collector, wherein each reflective side wall has a curvature that approximates a quarter parabola segment to thereby concentrate incident solar radiation on the plurality of solar receivers.
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 31/042 - PV modules or arrays of single PV cells
H02N 6/00 - Generators in which light radiation is directly converted into electrical energy (solar cells or assemblies thereof H01L 25/00, H01L 31/00)
patents
