Photovoltaic devices with type II-VI semiconductor absorber materials having improved carrier extraction layers are described herein. Methods of treating semiconductor absorber layers and forming improved carrier extraction layers and p-type contact layers are described.
H10F 10/162 - Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
H10F 77/123 - Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
H10F 77/169 - Thin semiconductor films on metallic or insulating substrates
H10K 30/84 - Layers having high charge carrier mobility
H10K 71/10 - Deposition of organic active material
A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium.
H10F 10/161 - Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
H10F 10/162 - Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
H10F 77/123 - Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
H10F 10/162 - Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
H10F 77/123 - Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.
H10F 77/121 - Active materials comprising only selenium or only tellurium
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H10F 10/16 - Photovoltaic cells having only PN heterojunction potential barriers
H10F 10/162 - Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
H10F 77/123 - Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
H10F 77/169 - Thin semiconductor films on metallic or insulating substrates
H10F 10/162 - Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
H10F 10/16 - Photovoltaic cells having only PN heterojunction potential barriers
H10F 77/123 - Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
6.
PHOTOVOLTAIC DEVICES WITH INTRACELL ISOLATIONS AND METHODS FOR FORMING THE SAME
According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
Described herein are solar power plants having hail resistant photovoltaic modules (102) with hail absorbing members (180), hail guards, or hail guard covers, methods for operating the solar power plants, and hail resistant photovoltaic modules with hail absorbing members, hail guards, or hail guard covers.
H02S 20/10 - Supporting structures directly fixed to the ground
H02S 40/34 - Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
H02S 20/32 - Supporting structures being movable or adjustable, e.g. for angle adjustment specially adapted for solar tracking
37 - Construction and mining; installation and repair services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Installation, maintenance and repair of solar installations for generating power, solar collectors and photovoltaic modules; contruction planning and consultancy of photovoltaic arrays and systems. Technology planning and consulting in the field of solar energy, specializing in solar cells, photovoltaic cells, photovoltaic panels, photovoltaic arrays, and solar collectors; research and development in the field of photovoltaic solar energy; quality evaluation for others in the field of maintenance, repair and installation of solar installations and photovoltaic installations; design of solar modules, panels, and arrays.
The invention relates to a thin film solar module comprising a monolithic solar cell array, including a plurality of solar cells with a layer structure, comprising a rear contact layer, a front contact layer and an absorber layer between the rear contact layer and the front contact layer, and an electrical connection structure for electrically serially connecting neighboring solar cells. The invention also relates to an associated production method.
H01L 31/0465 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
11.
Cadmium Selenide Based Photovoltaic Devices And Methods For Forming The Same
Provided are photovoltaic devices with polycrystalline type II-VI semiconductor absorber materials including n-type absorber compositions and having p-type hole contact layers are described herein. Methods of treating semiconductor absorber layers and forming hole contact layers are described.
H01L 31/0368 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
12.
Methods for Perovskite Device Processing by Vapor Transport Deposition
Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.
H01G 9/00 - Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devicesProcesses of their manufacture
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
H10K 30/30 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 30/82 - Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
H10K 71/16 - Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
Ways of making and using tandem photovoltaic devices are provided, where such devices can include a first submodule, a second submodule, and an interface between the first submodule and the second submodule. The interface permits a portion of light to pass therethrough and optically couples the first submodule and the second submodule. Optically coupling the first submodule and the second submodule includes reducing reflection of the portion of light passing through the interface.
Structures and methods for making and using tandem photovoltaic devices are provided, where such devices can include a first submodule, a second submodule, and an interlayer disposed between the first submodule and the second submodule. The interlayer permits a portion of light to pass therethrough and includes first and second conformal layers along with a core layer. The first conformal layer directly contacts and conforms to a surface of the first submodule, the second conformal layer directly contacts and conforms to a surface of the second submodule, and the core layer is disposed between the first conformal layer and the second conformal layer.
H01L 31/055 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
19.
Photovoltaic Devices and Methods for Producing Devices Using Perovskite Materials
H10K 85/50 - Organic perovskitesHybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
A method of patterning a thin-film photovoltaic layer stack includes the steps of providing a continuous layer stack comprising a planar substrate, a first electrode layer on the substrate and a photovoltaic layer on the first electrode layer, immersing the layer stack into an electrically conductive solution, applying a bias voltage between the electrolyte solution and the first electrode layer and converting a first material or a first material composition provided in at least a first portion of the layer stack into a first reaction product by an electrochemical reaction, wherein the first reaction product has an electrical conductivity that is lower than an electrical conductivity of the first material or first material composition, or removing a first material or a first material composition provided in at least a first portion of the layer stack by an electrochemical reaction.
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.
H10K 30/86 - Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
29.
Multilayer Back Contacts for Perovskite Photovoltaic Devices
Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.
The present disclosure relates to a method that includes preparing a mixture by dissolving at least two halide perovskite precursors in a first liquid, forming a halide perovskite crystal in the mixture by lowering a solubility limit of at least one of the halide perovskite precursors, and separating the halide perovskite crystal from the mixture, where at least one of the halide perovskite precursors contains an impurity, and the halide perovskite crystal is substantially free of the impurity.
According to the embodiments provided herein, an island in a regular, closed shape is ablated in a first conductive layer. An interconnect is formed through the island, using the island as an alignment fiducial. The island and the interconnect are isolated from the remainder of the first conductive layer.
A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/072 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
37 - Construction and mining; installation and repair services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Installation, maintenance and repair of solar installations for generating power, solar collectors and photovoltaic modules. Technology planning and consulting in the field of solar energy, specializing in solar cells, photovoltaic cells, photovoltaic panels, photovoltaic arrays, and solar collectors; research and development in the field of photovoltaic solar energy; quality evaluation for others in the field of maintenance, repair and installation of solar installations and photovoltaic installations; design of solar modules, panels, and arrays.
A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/20 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor material
36.
DOPED PHOTOVOLTAIC SEMICONDUCTOR LAYERS AND METHODS OF MAKING
Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H10F 10/162 - Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
H10F 77/123 - Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
39.
PHOTOVOLTAIC DEVICE INCLUDING A P-N JUNCTION AND METHOD OF MANUFACTURING
A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Photovoltaic devices (100) with type ll-VI semiconductor absorber materials (160) having p-type contact layers (180) are obtained by forming a ll-VI absorber layer over a substrate stack (113), wherein the type II material includes cadmium (Cd) and the type VI material includes tellurium (Te); contacting an alkaline wash fluid, comprising a hydroxide, to a second surface of the absorber layer to produce a Cd-rich surface, depositing a p-type contact layer (180) over the absorber layer (160), whereby the p-type contact layer is directly adjacent to the Cd-rich layer, and wherein the p-type contact layer comprises at least one of: PTAA, P3HT, poly-TPD, TFB, TTF-1, TF8-TAA, TIF8-TAA, SGT-407, PCDTBT, SpiroOMeTAD, anthracene-based HTM, polythiophene, semiconducting polymers, NiO, CuSCN, or Cui; and depositing a conductive layer (190) over the p-type contact layer.
H01L 31/0749 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CuInSe2 [CIS] heterojunction solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Photovoltaic devices with type II-VI semiconductor absorber materials having improved carrier extraction layers are described herein. Methods of treating semiconductor absorber layers and forming improved carrier extraction layers and p-type contact layers are described.
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
In accordance with one or more embodiments herein, a method of manufacturing a photovoltaic (PV) top module, to be used together with a PV bottom module, e.g an SI-based PV bottom module, is provided. The method may include monolithically interconnecting a plurality of thin film based PV sub-cells, manufactured using a perovskite material and/or a CIGS material as solar absorbing material, in series on a substrate in order to create a PV top module including at least one first PV top sub-module, and arranging metal grid lines on top and bottom contact layers of the PV top module. The metal grid lines may be arranged either above or below the top and bottom contact layers of the PV top module.
Provided are photovoltaic devices with polycrystalline type II- VI semiconductor absorber materials including n-type absorber compositions and having p-type hole contact layers are described herein. Methods of treating semiconductor absorber layers and forming hole contact layers are described.
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/072 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
G01N 23/2258 - Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 µs. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.
Ways of making and using tandem photovoltaic devices are provided, where such devices can include a first submodule, a second submodule, and an interface between the first submodule and the second submodule. The interface permits a portion of light to pass therethrough and optically couples the first submodule and the second submodule. Optically coupling the first submodule and the second submodule includes reducing reflection of the portion of light passing through the interface.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
49.
MATERIALS AND METHODS FOR TANDEM PHOTOVOLTAIC DEVICES
Structures and methods for making and using tandem photovoltaic devices are provided, where such devices can include a first submodule, a second submodule, and an interlayer disposed between the first submodule and the second submodule. The interlayer permits a portion of light to pass therethrough and includes first and second conformal layers along with a core layer. The first conformal layer directly contacts and conforms to a surface of the first submodule, the second conformal layer directly contacts and conforms to a surface of the second submodule, and the core layer is disposed between the first conformal layer and the second conformal layer.
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
50.
BIFACIAL ENHANCEMENT LAYERS AND PHOTOVOLTAIC DEVICES INCLUDING THE SAME
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
H01L 31/0384 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
H01L 31/055 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
b) of the front contact layer of the other solar cell facing away from an absorber layer, wherein the connection strip regions of the solar cells have connection recesses (9) in the front contact layer and the absorber layer for exposing the side of the rear contact layer facing the absorber layer. The invention also relates to the use of same in thin film solar cell technology.
H01L 31/044 - PV modules or arrays of single PV cells including bypass diodes
H01L 31/0465 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.
H01G 9/00 - Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devicesProcesses of their manufacture
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
H10K 30/30 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
H10K 30/82 - Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
H10K 71/16 - Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm−3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
55.
Method of patterning a thin-film photovoltaic layer stack
A method of patterning a thin-film photovoltaic layer stack includes the steps of providing a continuous layer stack comprising a planar substrate, a first electrode layer on the substrate and a photovoltaic layer on the first electrode layer, immersing the layer stack into an electrically conductive solution, applying a bias voltage between the electrolyte solution and the first electrode layer and converting a first material or a first material composition provided in at least a first portion of the layer stack into a first reaction product by an electrochemical reaction, wherein the first reaction product has an electrical conductivity that is lower than an electrical conductivity of the first material or first material composition, or removing a first material or a first material composition provided in at least a first portion of the layer stack by an electrochemical reaction.
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
Photovoltaic devices, and methods of making the same, are described. A photovoltaic device comprises a plurality of electrically connected photovoltaic cells, wherein the photovoltaic cells comprise a conducting layer having a first surface and a second surface, the first surface facing an absorber layer; an insulating material disposed on the second surface over at least one of the photovoltaic cells; a conductive member on the insulating material, wherein the insulating material is configured to electrically insulate the conductive member from the second surface; a bus member electrically coupled to the one of the plurality of photovoltaic cells and to the conductive member; and an edge seal comprising a sealant material extending over at least a portion of the one of the plurality of photovoltaic cells; wherein the bus member is disposed between the edge seal and the plurality of photovoltaic cells.
The present disclosure relates to a method that includes preparing a mixture by dissolving at least two halide perovskite precursors in a first liquid, forming a halide perovskite crystal in the mixture by lowering a solubility limit of at least one of the halide perovskite precursors, and separating the halide perovskite crystal from the mixture, where at least one of the halide perovskite precursors contains an impurity, and the halide perovskite crystal is substantially free of the impurity.
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
According to the embodiments provided herein, an island in a regular, closed shape is ablated in a first conductive layer. An interconnect is formed through the island, using the island as an alignment fiducial. The island and the interconnect are isolated from the remainder of the first conductive layer.
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
64.
Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks
According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.
An evaporation system comprises an evaporation chamber having an interior enclosed by one or more chamber walls; an evaporation source comprising (i) a source body for containing a feedstock material, and (ii) an evaporation port fluidly coupling the source body with an interior of the evaporation chamber; an insulation material; and a computer-based controller for configuring the insulation material in (i) a first configuration in which the insulation material is disposed snugly around the source body and (ii) a second configuration in which at least a portion of the insulation material is spaced away from the source body and at least a second portion of the insulation material is disposed snugly around the source body; wherein the insulation material does not cover an opening of the evaporation port in the first configuration and the second configuration.
Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 51/44 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details of devices
Photovoltaic devices (100) with type ll-VI semiconductor absorber materials (160) having p-type contact layers (180) are obtained by forming a ll-VI absorber layer over a substrate stack (113), wherein the type II material includes cadmium (Cd) and the type VI material includes tellurium (Te); contacting an alkaline wash fluid, comprising a hydroxide, to a second surface of the absorber layer to produce a Cd-rich surface, depositing a p-type contact layer (180) over the absorber layer (160), whereby the p-type contact layer is directly adjacent to the Cd-rich layer, and wherein the p-type contact layer comprises at least one of: PTAA, P3HT, poly-TPD,TFB, TTF-1, TF8-TAA, TIF8-TAA, SGT-407, PCDTBT, SpiroOMeTAD, anthracene-based HTM, polythiophene, semiconducting polymers, NiO, CuSCN, or Cui; and depositing a conductive layer (190) over the p-type contact layer.
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L 31/0465 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
H01L 31/0463 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
70.
METAL OXYNITRIDE BACK CONTACT LAYERS FOR PHOTOVOLTAIC DEVICES
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Photovoltaic apparatus and installations for generating
solar electricity; photovoltaic cells (solar cells);
photovoltaic modules; solar cells for electricity
generation; photovoltaic installations for generating
electricity [photovoltaic power plants]; photovoltaic
apparatus for converting solar radiation to electrical
energy; photovoltaic apparatus and installations for
generating solar electricity; photovoltaic solar modules;
solar panels; solar energy collectors for electricity
generation; solar modules; solar panels for the production
of electricity; solar panel arrays; apparatus for improving
power efficiency. Maintenance and repair of solar heating installations;
installation of solar heating systems; installation of power
generating apparatus and installations; installation of
energy-saving apparatus; installation of non-residential
solar panel power systems; installation of photovoltaic
cells and modules; installation of industrial plant;
installation of industrial machinery. Chemical vapour deposition; vapour depositing on metal
surfaces; application of coatings using physical vapor
deposition techniques; application of coatings using vacuum
deposition techniques; application of coatings using
chemical vapor deposition techniques. Engineering design; engineering consultancy relating to
manufacture; engineering consultancy services; engineering
research; scientific design services; scientific and
technological design; construction drafting; design and
development of new products; engineering services for the
design of machinery; engineering services for the design of
structures; consultation regarding product development;
advisory services relating to computer hardware design;
design consultancy services; product research and
development; product development; product development for
others; technological design services.
72.
TRANSPARENT CONDUCTING LAYERS AND PHOTOVOLTAIC DEVICES INCLUDING THE SAME
H01L 31/0445 - PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
(x) producing a lattice mismatch between the materials of the EBL and between the materials of the absorber of less than about two tenths of a percent when x˜y and has a value less than about 0.4.
H01L 31/044 - PV modules or arrays of single PV cells including bypass diodes
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
09 - Scientific and electric apparatus and instruments
Goods & Services
Photovoltaic modules; photovoltaic cells; photovoltaic panels; photovoltaic modules, namely, an assembly of photovoltaic cells; solar arrays, namely, photovoltaic solar modules for production of electricity; solar energy systems comprising photovoltaic solar modules for the production of electricity.
79.
Photovoltaic device including a p-n junction and method of manufacturing
A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.
H01L 31/044 - PV modules or arrays of single PV cells including bypass diodes
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
80.
Doped photovoltaic semiconductor layers and methods of making
Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
According to the embodiments provided herein, a method for sputtering a TCO material onto a substrate includes process conditions that produce a textured topography at the interfaces of various layers. The textured topography can include an average roughness from about 5 to about 40 nm. The process conditions can include providing oxygen in the sputtering environment at a flow rate of from 0 to about 30 sccm; or heating the substrate to at least 200; or increasing the magnetic field strength to above 40 mT. The textured topography creates interfacial transition areas which have hybrid physical properties compared to their constituent materials.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
40 - Treatment of materials; recycling, air and water treatment,
09 - Scientific and electric apparatus and instruments
37 - Construction and mining; installation and repair services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Chemical vapour deposition, namely, custom production of thin films through vapor deposition for the purpose of making thin film photovoltaic devices; treatment of materials by application of coatings onto semiconductor surfaces, glass substrate surfaces, plastic substrate surfaces and substrate surfaces covered with other thin film materials using physical vapor deposition techniques for the purpose of making thin film photovoltaic devices; treatment of materials by application of coatings onto semiconductor surfaces, glass substrate surfaces, plastic substrate surfaces and substrate surfaces covered with other thin film materials using vacuum deposition techniques for the purpose of making thin film photovoltaic devices; treatment of materials by application of coatings onto semiconductor surfaces, glass substrate surfaces, plastic substrate surfaces and substrate surfaces covered with other thin film materials using chemical vapor deposition techniques for the purpose of making thin film photovoltaic devices Photovoltaic apparatus and installations for generating solar electricity; solar cells, namely, photovoltaic cells; photovoltaic modules; solar cells for electricity generation; photovoltaic power plants, namely, photovoltaic installations for generating electricity; photovoltaic apparatus for converting solar radiation to electrical energy; photovoltaic apparatus and installations for the production solar electricity; photovoltaic solar modules; solar panels for producing electricity; solar energy collectors in the nature of solar panels for electricity generation; photovoltaic solar modules for production of electricity; solar panels for the production of electricity; solar panel arrays, namely, connected solar panels for the production of electricity; apparatus for measuring and improving electrical power efficiency Installation of power generating apparatus and installations; installation of industrial machinery for fabrication of photovoltaic solar cells and modules Engineering design, namely, engineering services and design of fabrication lines, equipment and processes for production of photovoltaic cells and modules; engineering consultancy in the field of manufacture; engineering consultancy services; scientific design services of fabrication lines, equipment and processes for production of photovoltaic cells and modules; scientific and technological design of photovoltaic cells and modules as well as technologies for production of the same; design and development of new products; engineering services for the design of machinery; engineering services for the design of structures; consultation in the field of product development; advisory services in the field of computer hardware design; design consultancy services for fabrication lines, equipment and processes for production of photovoltaic cells and modules; product research and development; product development; product development for others; technological design services for fabrication lines, equipment and processes for production of photovoltaic cells and modules
84.
Buffer layers for photovoltaic devices with group V doping
According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
85.
Methods and systems for use with photovoltaic devices
According to embodiments provided herein, the performance of photovoltaic device can be improved by rapidly heating an absorber layer of a device in open-circuit to a high temperature for a short period of time followed by rapid quenching. The rapid heating may be accomplished by one or more pulses of high intensity electromagnetic energy. The energy may be visible light. The energy may be absorbed primarily in the absorber layer, such that the absorber layer is preferentially heated, promoting chemical reactions of dopant complexes. The dopant chemical reactions disrupt compensating defect complexes that have formed in the device, and regenerate active carriers.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
86.
SYSTEMS AND METHODS FOR VAPORIZATION AND VAPOR DISTRIBUTION
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C 14/26 - Vacuum evaporation by resistance or inductive heating of the source
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
87.
Photovoltaic Devices Including An Interfacial Layer
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L 31/072 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
09 - Scientific and electric apparatus and instruments
Goods & Services
Photovoltaic modules; photovoltaic cells; photovoltaic panels; photovoltaic modules, namely, an assembly of photovoltaic cells; solar arrays, namely, photovoltaic solar modules for production of electricity; solar energy systems comprising photovoltaic solar modules for the production of electricity.
09 - Scientific and electric apparatus and instruments
Goods & Services
Photovoltaic modules; photovoltaic cells; photovoltaic panels; photovoltaic modules, namely, an assembly of photovoltaic cells; solar arrays, namely, photovoltaic solar modules for production of electricity; solar energy systems comprising photovoltaic solar modules for the production of electricity.
90.
METHODS FOR PEROVSKITE DEVICE PROCESSING BY VAPOR TRANSPORT DEPOSITION
Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.
C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
Photovoltaic devices, and methods of making the same, are described. A photovoltaic device comprises a plurality of electrically connected photovoltaic cells, wherein the photovoltaic cells comprise a conducting layer having a first surface and a second surface, the first surface facing an absorber layer; an insulating material disposed on the second surface over at least one of the photovoltaic cells; a conductive member on the insulating material, wherein the insulating material is configured to electrically insulate the conductive member from the second surface; a bus member electrically coupled to the one of the plurality of photovoltaic cells and to the conductive member; and an edge seal comprising a sealant material extending over at least a portion of the one of the plurality of photovoltaic cells; wherein the bus member is disposed between the edge seal and the plurality of photovoltaic cells.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0296 - Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L 31/073 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
According to the embodiments provided herein, a method for scribing a layer stack of a photovoltaic device can include directing a laser scribing waveform to a film side of a layer stack. The laser scribing waveform can include pulse groupings that repeat at a group repetition period of greater than or equal to 1.5 μs. Each pulse of the pulse groupings can have a pulse width of less than or equal to 900 fs.
The efficiency of a photovoltaic device is enhanced by operating the device in a dark bias mode during a dark period, and in a power generation mode during a subsequent illuminated period. The dark period occurs when an insufficient amount of irradiance is received by the photovoltaic device to produce a useful amount of generated power. In the dark bias mode, a forward DC biasing current is applied to the photovoltaic device, and the device consumes a small current. In the power generation mode, the forward bias is not applied to the photovoltaic device, and the photovoltaic device generates a current in a direction opposite to that of the forward biasing current that was applied during the preceding dark period.
A method for annealing an absorber layer is disclosed, the method including contacting a surface of the absorber layer with an annealing material provided as a gel. The annealing material comprises cadmium chloride and a thickening agent. A viscosity of the gel of the annealing material is greater than or equal to 5 millipascal seconds.
