Abstract

An electronic device including gate lines, data lines, switching elements, photosensitive elements and bias lines is provided. The data lines are electrically insulated and intersected with the gate lines. The switching elements are electrically connected to the gate lines and at least a part of the data lines. The photosensitive elements are electrically connected to at least a part of the switching elements. Each of the bias lines includes a first portion and a second portion. The first portion overlaps and is electrically insulated from a corresponding data line. The second portion is electrically connected to a corresponding photosensitive element. In a top view, the second portion extends from the first portion into an orthographic projection of the corresponding photosensitive element, and an overlapping area of the second portion and the corresponding photosensitive element is smaller than an area of the second portion.

IPC Classes  ?

• H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays

Abstract

A transistor device includes a substrate and a transistor. The transistor is disposed on the substrate and includes a gate, a gate dielectric layer, a semiconductor layer, a source and a drain. The gate dielectric layer is disposed on the gate. The semiconductor layer is disposed on the gate dielectric layer, and includes a first region and a second region. The first region at least partially overlaps with the gate in a normal direction of the substrate, the second region extends from the first region to an edge of the semiconductor layer, and the second region further includes a dopant compared to the first region. The source and the drain are disposed on the semiconductor layer, and are electrically connected to the second region of the semiconductor layer. At least one of the source and the drain does not overlap with the gate in the normal direction of the substrate.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
• H01L 29/49 - Metal-insulator semiconductor electrodes

Abstract

A photoelectric sensing device including a substrate, a first pixel structure, a second pixel structure and a first bus line. The first pixel structure is disposed on the substrate and includes a first photoelectric sensing component, wherein the first photoelectric sensing component has a first semiconductor layer. The second pixel structure is disposed on the substrate and includes a second photoelectric sensing component, wherein the second photoelectric sensing component has a second semiconductor layer. The first bus line is disposed on the substrate and located between the first semiconductor layer and the second semiconductor layer, wherein the first bus line is electrically connected to the first pixel structure and the second pixel structure.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A sensing method and a sensing device are provided. The sensing method includes the following steps: installing the sensing device on a X-ray source device; obtaining a first distance parameter between a X-ray sensing panel and a distance sensor by the distance sensor of the sensing device; obtaining a second distance parameter between a shooting subject and the distance sensor by the distance sensor of the sensing device; and calculating a thickness parameter of the shooting object according to the first distance parameter and the second distance parameter by a microcontroller unit of the sensing device.

IPC Classes  ?

• A61B 6/58 - Testing, adjusting or calibrating thereof
• G16H 30/20 - ICT specially adapted for the handling or processing of medical images for handling medical images, e.g. DICOM, HL7 or PACS

Abstract

An electronic device, including a sensing substrate, a scintillator layer, and an adjustable reflective layer, is provided. The scintillator layer is disposed on the sensing substrate. The adjustable reflective layer is disposed on the sensing substrate and includes a first electrode, a second electrode, and an electrophoretic layer. The first electrode is disposed on the scintillator layer. The second electrode is disposed on the first electrode. The electrophoretic layer is disposed between the first electrode and the second electrode. The second electrode surrounds the scintillator layer.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• G02F 1/167 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis

Abstract

A detection device, including a substrate, a switch element, a photosensitive element, and a planarization layer, is provided. The switch element is disposed on the substrate. The photosensitive element includes a bottom electrode, a top electrode, and a first semiconductor disposed between the bottom electrode and the top electrode. The planarization layer is disposed between the bottom electrode and the switch element. The bottom electrode is coupled to the switch element.

IPC Classes  ?

• H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
• H01L 31/0224 - Electrodes
• H01L 31/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors

Abstract

An image analysis method and an image analysis system are provided. The image analysis system includes an X-ray sensor, a computing device and a display device. The computing device is coupled to the X-ray sensor. The computing device includes a processing module and a memory module. The display device is coupled to the computing device. The processing module executes an image processing unit and an image analysis unit stored in the memory module to perform an image analysis according to dual-energy image data generated by the X-ray sensor, and outputs a lesion judgment result to the display device.

IPC Classes  ?

• G06T 7/00 - Image analysis
• G16H 50/20 - ICT specially adapted for medical diagnosis, medical simulation or medical data miningICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for computer-aided diagnosis, e.g. based on medical expert systems

Abstract

An electronic device, including a scintillator layer, a sensor, and a filter, is provided. The sensor overlaps the scintillator layer and includes a first sensing unit and a second sensing unit. The filter includes a first filter unit overlapping the first sensing unit and a second filter unit overlapping the second sensing unit, and the first filter unit and the second filter unit have different thicknesses.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors

Abstract

An electronic device is provided. The electronic device includes a substrate, an active element, a first insulation layer, and a detection element. An active element is disposed on the substrate. A first insulation layer is disposed on the active element. A detection element is disposed on the first insulation layer. The detection element comprises a lower electrode disposed on the first insulation layer, an active layer disposed on the lower electrode, an upper electrode disposed on the active layer, and the lower electrode is a part of a conductive layer. The first insulation layer has a recess, and the recess does not overlap with the conductive layer in a normal direction of the substrate.

IPC Classes  ?

• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings

Abstract

An electronic device configured to detect an object to be detected includes at least one light source and a plurality of sensors. The at least one light source is arranged on a first plane and illuminates the object to be detected. The plurality of sensors are arranged on a second plane and surround the object to be detected. The plurality of sensors are stitched together. The first plane is different from the second plane.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A control method for a detection system. The detection system includes a detection device. The detection device includes multiple scanning lines. The control method includes the following steps: first image data is generated through the detection device, and at least a part in the first image data corresponds to a key area; a first part corresponding to the key area in the scanning lines is controlled by the detection device in a first scanning manner; a second part corresponding to an area other than the key area in the scanning lines is controlled by the detection device in a second scanning manner. Second image data is generated by the detection device. A scanning frequency of the first scanning manner is lower than a scanning frequency of the second scanning manner.

IPC Classes  ?

• G06T 7/00 - Image analysis

Abstract

Disclosed is a method for manufacturing a detection panel, which includes the following steps. A first flexible board is provided, and the first flexible board has a circuit layer. A second flexible board is provided, the first flexible board is fixed on the second flexible board, and the first flexible board is disposed between the circuit layer and the second flexible board. A carrier board is provided, the carrier board is fixed on the second flexible board, and the second flexible board is disposed between the carrier board and the first flexible board. A scintillator is formed on the circuit layer. The carrier board is detached from the second flexible board. The first flexible board and the second flexible board are cut to form the detection panel.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An auxiliary frame for accommodating a flat panel detector is provided. A first side of the auxiliary frame includes two first fixing structures. The two first fixing structures are adjacent to a first edge of the flat panel detector and are respectively located on two sides of a first center axis of the flat panel detector. The first edge of the flat panel detector has a first length. A distance between the two first fixing structures is greater than or equal to half of the first length and less than the first length.

IPC Classes  ?

• A61F 5/37 - Restraining devices for the body or for body partsRestraining shirts

Abstract

A light detection method for a light detection device is provided. The light detection device includes multiple scan lines and multiple light sensing elements. Each of the light sensing elements is coupled to a corresponding one of the scan lines. The light detection method includes: in a detection mode, sequentially scanning a first scan line to a (N+1)th scan line among the scan lines, wherein a Nth scan line is not adjacent to at least one of a (N−1)th scan line and the (N+1)th scan line; reading signals of the light sensing elements coupled to the first scan line to the (N+1)th scan line; determining whether the signals meet an exposure standard; and controlling the light detection device to enter a value reading mode when the signals meet the exposure standard.

IPC Classes  ?

• G01J 1/02 - Photometry, e.g. photographic exposure meter Details
• G01J 1/04 - Optical or mechanical part
• G01J 1/44 - Electric circuits

Abstract

The disclosure provides an image capturing method performed by applying a plurality of detection devices to perform an image capturing operation. The image capturing method includes following steps: A first detection device is provided. A second detection device is provided and connected to the first detection device. An image capturing operation is performed by the first detection device and the second detection device, so as to generate first image data and second image data, respectively. The second image data are transferred to the first detection device by the second detection device. By applying the image capturing method, costs of a detection system are not significantly increased, and the detection devices may be expanded.

IPC Classes  ?

• H04N 23/13 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from different wavelengths with multiple sensors
• H04N 23/51 - Housings
• H04N 23/66 - Remote control of cameras or camera parts, e.g. by remote control devices
• H04N 23/80 - Camera processing pipelinesComponents thereof

Abstract

A protective case which is suitable for electronic devices of various sizes includes a bottom case and a positioning element. The bottom case is configured to accommodate an electronic device. The bottom case includes a plurality grooves, and each of the grooves includes a plurality of positioning holes. The positioning element is fixed to one of the positioning holes according to the size of the electronic device.

IPC Classes  ?

• A45C 11/00 - Receptacles for purposes not provided for in groups

Abstract

A charging device used to form a charging loop with an electronic device is provided. The charging device includes a base and a first wireless charging terminal. The first wireless charging terminal is disposed in the base, wherein the first wireless charging terminal and the base can move relatively. A charging system is also provided.

IPC Classes  ?

• H02J 50/40 - Circuit arrangements or systems for wireless supply or distribution of electric power using two or more transmitting or receiving devices
• H02J 50/10 - Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
• H02J 50/90 - Circuit arrangements or systems for wireless supply or distribution of electric power involving detection or optimisation of position, e.g. alignment

Abstract

A photo detector including a photo sensor part and a power source module is provided. The power source module is fixed on the photo sensor part and electrically connected to the photo sensor part. The power source module is detachable and includes a handle.

IPC Classes  ?

• H04N 23/30 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from X-rays
• H04N 23/54 - Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils

Abstract

An electronic device including a substrate, a first electrode layer, a photodiode, an insulating layer, a second electrode layer, and a first transparent conductive layer is provided. The first electrode layer is disposed on the substrate. The photodiode is disposed on the first electrode layer and is electrically connected to the first electrode layer. The insulating layer is disposed on the photodiode. The second electrode layer is disposed on the insulating layer and is electrically connected to the photodiode. The first transparent conductive layer is disposed on the insulating layer and contacts the second electrode layer. A manufacturing method of an electronic device is also provided.

IPC Classes  ?

• H01L 27/144 - Devices controlled by radiation

Abstract

An electronic device including a substrate, a gate line, a switch element, and a photodetector is provided. The gate line is disposed on the substrate. The switch element is disposed on the substrate and is electrically connected to the gate line. The photodetector is disposed on the substrate and electrically connected to the switch element. The photodetector includes a first semiconductor. In a cross-sectional view of the electronic device, a sidewall of the first semiconductor and the gate line are spaced from each other by a first distance. The first distance is greater than or equal to 2 micrometers and less than or equal to 6 micrometers.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A photodetector and a control method are provided. The control method includes: sending a command signal by an external device; receiving the command signal by a signal transceiver, and notifying the command signal to a controller; and performing an operation corresponding to the command signal according to the command signal by the controller.

IPC Classes  ?

• H04N 23/66 - Remote control of cameras or camera parts, e.g. by remote control devices
• H04N 23/62 - Control of parameters via user interfaces
• H04N 23/63 - Control of cameras or camera modules by using electronic viewfinders

Abstract

An operating method for electronic device is provided, which is applied to a detecting device to perform operations. The electronic device has access to a first wireless internet access point (AP). The electronic device includes a display panel and a sensing device. The operating method includes the following operations. A received signal strength indication (RSSI) of a second wireless internet AP is detected. When the RSSI of the second wireless internet AP is greater than or equal to a first threshold value, the display panel displays an RSSI of the first wireless internet AP and the RSSI of the second wireless internet AP. A sensing operation is received through the sensing device. In response to the sensing operation, the electronic device has access to the second wireless internet AP.

IPC Classes  ?

• H04B 17/327 - Received signal code power [RSCP]
• H04W 28/02 - Traffic management, e.g. flow control or congestion control

Abstract

An image signal adjustment method of a detection device is provided. The detection device outputs an image signal including multiple subpixels. The image signal adjustment method includes the following steps: locating a subpixel to be adjusted; analyzing gray-scale values of subpixels in a first direction passing through the subpixel to be adjusted; and using the gray-scale values of the subpixels in the first direction to calculate a gray-scale value of the subpixel to be adjusted.

IPC Classes  ?

• G09G 3/20 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix

Abstract

An operation method of a detection device and a detection device are provided. The detection device includes a first interface and a second interface. The operation method includes the following. A voltage signal is received through the first interface. A voltage value of the voltage signal is determined. One of a plurality of functional modules is selected according to the voltage value, so as to transmit a signal through the second interface.

IPC Classes  ?

• G01R 31/08 - Locating faults in cables, transmission lines, or networks

Abstract

The disclosure provides a light detection device and a detection method for controlling a light source device. The light detection device includes a detection panel and a processor. The detection panel converts an input light from the light source device into a converted light and converts the converted light into a charge. The processor selects a first region and a second region other than the first region from the detection panel. A first charge of the converted light received by at least one first pixel of the first region during a first period is used to detect a dose of the input light. A second charge of the converted light received by the second region during the first period is used to generate a data image. The charge of the converted light received by at least one first pixel during a second period is used to generate the data image.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors

Abstract

A foldable detection device and an image signal processing method for the foldable detection device are provided. The foldable detection device is used in an unfolded state and a folded state. The foldable detection device includes a first detection panel and a second detection panel. When the foldable detection device is in the unfolded state, the first detection panel and the second detection panel partially overlap in a direction of a top view of the foldable detection device.

IPC Classes  ?

• A61B 6/00 - Apparatus or devices for radiation diagnosisApparatus or devices for radiation diagnosis combined with radiation therapy equipment

Abstract

An X-ray sensing module includes a substrate, multiple normal pixels, and at least two dark pixels. The substrate includes a sensing area. The sensing area has four corners in a top view direction. The normal pixels are disposed in the sensing area and are configured to sense light signals. The at least two dark pixels are respectively disposed at different positions in the sensing area. A distance between the at least two dark pixels and an edge of the sensing area is ¼ to 1/350 of a length of the edge.

IPC Classes  ?

• A61B 6/00 - Apparatus or devices for radiation diagnosisApparatus or devices for radiation diagnosis combined with radiation therapy equipment
• A61B 6/42 - Arrangements for detecting radiation specially adapted for radiation diagnosis

Abstract

A detection device including a substrate, a conductive pad, a conductive line, a photoelectric element, and an insulating layer is provided. The substrate includes a first region and a second region surrounding the first region. The conductive pad is disposed on the substrate and is located in the second region. The conductive line is disposed on the substrate and extends from the first region to the second region. The conductive line is coupled with the conductive pad. The photoelectric element is disposed on the substrate and is located in the first region. The photoelectric element is coupled to the conductive line. The insulating layer is disposed on the photoelectric element and extends from the first region to the second region. The insulating layer has a groove, and the groove is located in the second region. A manufacturing method of a detection device is also provided.

IPC Classes  ?

• H01L 23/60 - Protection against electrostatic charges or discharges, e.g. Faraday shields
• G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors

Abstract

A detection device, including a substrate, a gate line, a gate line driving circuit, and a photoelectric element, is provided. The substrate includes a detection area and a peripheral area surrounding the detection area. The gate line is disposed on the substrate and extends from the detection area to the peripheral area. The gate line driving circuit is disposed in the peripheral area of the substrate and includes a first transistor and a second transistor. The first transistor is coupled to a first clock signal and the gate line. The second transistor is coupled to a second clock signal and the first transistor. The photoelectric element is disposed in the detection area and is coupled to the gate line. A distance between the second transistor and the detection area is less than a distance between the first transistor and the detection area.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors

Abstract

An X ray device, including an array substrate, a scintillator layer, a first adhesion layer, a function film, and a second adhesion layer, is provided. The scintillator layer is disposed on the array substrate. The first adhesion layer is disposed between the scintillator layer and the array substrate. The function film is disposed on the array substrate. The second adhesion layer is disposed between the function film and the array substrate. The function film covers the scintillator layer.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors

Abstract

An X-ray device, including a sensor panel and a flexible scintillator structure disposed on the sensor panel, is provided. A manufacturing method of the X-ray device is also provided.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• G01T 1/208 - Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
• G01T 1/24 - Measuring radiation intensity with semiconductor detectors

Abstract

The disclosure provides an electronic device. The electronic device includes a substrate, a transistor, and a first insulating layer. The transistor is disposed on the substrate and includes a source electrode, a drain electrode, and a gate electrode. The first insulating layer is disposed between the source electrode and the gate electrode and between the drain electrode and the gate electrode. The first insulating layer has a first portion and a second portion. The first portion is defined as a portion overlapped with the source electrode and the drain electrode. The second portion is defined as a portion not overlapped with the source electrode and the drain electrode. A thickness of the first portion is greater than a thickness of the second portion. The electronic device of an embodiment of the disclosure may reduce transistor characteristic shift or improve transistor performance.

IPC Classes  ?

• H01L 29/786 - Thin-film transistors
• H01L 29/417 - Electrodes characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
• H01L 27/144 - Devices controlled by radiation

Abstract

A detection device including a substrate, a switch element, a photoelectric element, and a scintillator is provided. The switch element is disposed on the substrate. The photoelectric element is disposed on the substrate and coupled to the switch element. The photoelectric element includes a semiconductor, and the semiconductor includes a monocrystalline material or a polycrystalline material. The scintillator is at least partially overlapped with the photoelectric element in a top view direction of the detection device.

IPC Classes  ?

• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• G01T 1/166 - Scintigraphy involving relative movement between detector and subject
• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions

Abstract

The disclosure provides a first sensing device and a second sensing device. The second sensing device is disposed on the first sensing device, and each of the first sensing device and the second sensing device includes a substrate, a sensor array, and a scintillator layer. The sensor array is disposed on the substrate. The scintillator layer is disposed on the sensor array. A thickness of the scintillator layer of the second sensing device is greater than a thickness of the scintillator layer of the first sensing device.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors

Abstract

Provided are a sensing device and a manufacturing method thereof. The sensing device includes a substrate, a first electrode and a sensing layer. The first electrode is disposed on the substrate. The sensing layer is disposed on the first electrode and has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface. The manufacturing method of the sensing device includes the following. A substrate is provided. A sensing layer is formed on the substrate. A first electrode is formed on the substrate so that the first electrode is disposed between the sensing layer and the substrate. The sensing layer has a first surface adjacent to the first electrode. The first electrode has a length smaller than that of the first surface of the sensing layer.

IPC Classes  ?

• H10F 39/12 - Image sensors
• H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
• H10F 39/18 - Complementary metal-oxide-semiconductor [CMOS] image sensorsPhotodiode array image sensors

Abstract

Provided is an X ray image processing method including the following. One of computing modules stored in an X ray device is activated, in which the one of the computing modules corresponds to a measurement area. The measurement area corresponding to the one of the computing modules is measured by an image measurement module, and a measurement signal is produced. The measurement signal is transmitted to a computing unit by the image measurement module. A measurement image is computed by the computing unit according to the measurement signal, and is stored in a first storage unit in the X ray device. The one of the computing modules is written to the computing unit. The measurement image is transmitted to the computing unit by the first storage unit. The measurement image is analyzed by the computing unit using the one of the computing modules, and an analysis image is generated.

IPC Classes  ?

• A61B 6/00 - Apparatus or devices for radiation diagnosisApparatus or devices for radiation diagnosis combined with radiation therapy equipment
• A61B 6/46 - Arrangements for interfacing with the operator or the patient
• G06T 7/00 - Image analysis

Abstract

An X-ray device including a sensing panel and a scintillator layer is provided. The sensing panel includes a substrate and a first pixel. The first pixel is disposed on the substrate and includes a first light sensing component and a first switch component. The first switch component is disposed on the first light sensing component. The scintillator layer is disposed on the sensing panel, and the first switch component is disposed between the scintillator layer and the first light sensing component.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• G01T 1/208 - Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
• H01L 27/146 - Imager structures

Abstract

A circuit for sensing an X-ray including a switching element, a storage element, a sensing element and a branching element. The storage element electrically coupled to the switching element. The sensing element electrically coupled to the switching element. The branching element electrically coupled between the storage element and the sensing element.

IPC Classes  ?

• G01T 1/24 - Measuring radiation intensity with semiconductor detectors
• G01T 1/17 - Circuit arrangements not adapted to a particular type of detector

Abstract

A photo detector including a transistor and a charge storing component is provided. The transistor includes a gate, a source and a drain. The charge storing component is electrically connected with the transistor, and includes a top electrode and a bottom electrode. The source of the transistor, the drain of the transistor and the bottom electrode of the charge storing component are formed of a semiconductor layer.

IPC Classes  ?

• H01L 31/119 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
• H01L 31/0224 - Electrodes

Abstract

An X-ray device is provided, which includes a flexible substrate, a driver integrated circuit, and a scintillator layer. The flexible substrate includes an array portion and an extension portion. The driver integrated circuit is disposed on the flexible substrate. The scintillator layer is disposed on the flexible substrate.

IPC Classes  ?

• G01T 1/208 - Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• G01N 23/04 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material

Abstract

The disclosure provides a processing circuit adapted to read out a sensing voltage of an X-ray sensor and a signal processing method of a sampling circuit. The processing circuit includes an amplifier and the sampling circuit. An inverting input terminal of the amplifier is coupled to the X-ray sensor. The sampling circuit is coupled to an output terminal of the amplifier. The sampling circuit obtains a first voltage, a second voltage, and a sampling voltage of the X-ray sensor in different periods. The sampling voltage is between the first voltage and the second voltage. In the readout period, the sampling circuit subtracts the second voltage from the sampling voltage to obtain a third voltage, subtracts the second voltage from the first voltage to obtain a fourth voltage, and divides the third voltage by the fourth voltage to read out the sensing voltage of the X-ray sensor.

IPC Classes  ?

• G01T 1/24 - Measuring radiation intensity with semiconductor detectors
• H03F 3/19 - High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only

Abstract

An X ray device, including an array substrate, a scintillator layer, a first adhesion layer, a function film, and a second adhesion layer, is provided. The scintillator layer is disposed on the array substrate. The first adhesion layer is disposed between the scintillator layer and the array substrate. The function film is disposed on the array substrate. The second adhesion layer is disposed between the function film and the array substrate. The function film covers the scintillator layer.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors

Abstract

A radiation detection device, including a detection panel, is provided. The detection panel includes multiple first pixels, arranged into a first row in an extending direction of a data line; multiple second pixels, arranged into a second row in the extending direction of the data line; and multiple other second pixels, arranged into a third row in the extending direction of the data line. Each of the multiple first pixels includes a first switch. Each of the multiple second pixels and the multiple other second pixels includes a second switch. Each of the multiple second pixels and the multiple other second pixels includes a photodiode. The multiple first pixels do not include a photodiode. That is, compared with the multiple first pixels, each of the multiple second pixels further includes the photodiode electrically connected with the second switch.

IPC Classes  ?

• G01T 1/17 - Circuit arrangements not adapted to a particular type of detector
• H04N 5/32 - Transforming X-rays
• G01T 7/00 - Details of radiation-measuring instruments
• H04N 25/671 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction

Abstract

An X-ray device including a sensing panel is provided. The sensing panel includes a first pixel and a second pixel. The second pixel is disposed adjacent to the first pixel in a top view direction. The first pixel includes a first photoelectric conversion layer. The second pixel includes a second photoelectric conversion layer. The first photoelectric conversion layer and the second photoelectric conversion layer belong to different layers.

IPC Classes  ?

• H01L 31/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• H01L 31/0224 - Electrodes

Abstract

An X-ray device, including a sensor panel and a flexible scintillator structure disposed on the sensor panel, is provided. A manufacturing method of the X-ray device is also provided.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• G01T 1/208 - Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
• G01T 1/24 - Measuring radiation intensity with semiconductor detectors

Abstract

An electronic device is provided. The electronic device includes a substrate, an active element, a first insulation layer, and a detection element. The active element is disposed on the substrate. The first insulation layer is disposed on the active element. The detection element is disposed on the first insulation layer. The detection element comprises a lower electrode, an active layer and an upper electrode, and the lower electrode is a part of a conductive layer. The first insulation layer has a recess, and the recess does not overlap with the conductive layer in the normal direction of the substrate.

IPC Classes  ?

• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings

Abstract

A radiation-sensing device is provided. The radiation-sensing device includes a substrate, a first scintillator layer, a second scintillator layer, and an array layer. The first scintillator is disposed on a first side of the substrate, and includes a plurality of first blocking walls and a plurality of first scintillator elements. The plurality of first scintillator elements are located between the plurality of first blocking walls. The second scintillator layer is disposed on a second side of the substrate, and the second side is opposite to the first side. The array layer is located between the first scintillator layer and the second scintillator layer, and has a plurality of photosensitive elements. In addition, a projection of at least one of the plurality of first blocking walls on the substrate overlaps with a projection of at least one of the plurality of photosensitive elements on the substrate.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• G01T 1/208 - Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section

Abstract

A light detection device includes a first gate line, a second gate line adjacent to the first gate line, a first switching unit, a second switching unit, and a readout circuit. The first switching unit includes a first gate electrode connected to the first gate line, and a first drain electrode electrically connected to a light sensing unit. The second switching unit includes a second gate electrode connected to the second gate line, and a second drain electrode electrically connected to a light sensing unit. An operation method of the light detection device includes receiving a first readout signal and a second readout signal from the first switching unit and the second switching unit respectively by the readout circuit and calculating a difference between the first readout signal and the second readout signal for determining whether the light detection device is irradiated by detection light.

IPC Classes  ?

• H01L 27/144 - Devices controlled by radiation
• G01T 1/24 - Measuring radiation intensity with semiconductor detectors

Abstract

A photodetecting device is provided. The photodetecting device includes an array substrate. The first scan line extends in a first direction. The first data line extends in a second direction, wherein first data line is crossed with the first scan line. The first electronic unit is electrically connected to the first scan line and the first data line. The second electronic unit is adjacent to the first electronic unit and is disposed along the first direction. The third electronic unit is adjacent to the first electronic unit and is disposed along the second direction. The common line transmits a signal to the first electronic unit, the second electronic unit and the third electronic unit. The common line is disposed between the first electronic unit and the second electronic unit, or between the first electronic unit and the third electronic unit.

IPC Classes  ?

• G01T 1/20 - Measuring radiation intensity with scintillation detectors

Abstract

A control method for controlling a wireless device includes setting a decode protocol at a first wireless device and a second wireless device; publishing a service set identifier (SSID) by the first wireless device; detecting the service set identifier by the second wireless device; decoding the service set identifier according to the decode protocol by the second wireless device; and executing a specific function according to the service set identifier by the second wireless device.

IPC Classes  ?

• H04W 12/06 - Authentication
• H04W 76/14 - Direct-mode setup
• H04W 4/80 - Services using short range communication, e.g. near-field communication [NFC], radio-frequency identification [RFID] or low energy communication
• H04W 76/11 - Allocation or use of connection identifiers
• G06K 7/14 - Methods or arrangements for sensing record carriers by electromagnetic radiation, e.g. optical sensingMethods or arrangements for sensing record carriers by corpuscular radiation using light without selection of wavelength, e.g. sensing reflected white light

Goods & Services

Apparatus and installations for the production of X-rays, not for medical purposes; industrial X-ray machines; X-ray films, exposed; X-ray photographs, other than for medical purposes; X-rays producing apparatus and installations, not for medical purposes; X-ray tubes not for medical purposes; X-ray apparatus not for medical purposes; protection devices against X-rays, not for medical purposes X-ray photographs for medical purposes; X-ray apparatus for medical purposes; X-ray tubes for medical purposes; protection devices against X-rays, for medical purposes; apparatus and installations for the production of X-rays, for medical purposes

Goods & Services

Apparatus and installations for the production of X-rays, not for medical purposes; industrial X-ray machines; X-ray films, exposed; X-ray photographs, other than for medical purposes; X-rays producing apparatus and installations, not for medical purposes; X-ray tubes not for medical purposes; X-ray apparatus not for medical purposes; protection devices against X-rays, not for medical purposes. X-ray photographs for medical purposes; X-ray apparatus for medical purposes; X-ray tubes for medical purposes; protection devices against X-rays, for medical purposes; apparatus and installations for the production of X-rays, for medical purposes.

Abstract

An active matrix image sensing device includes an image sensing substrate and a scintillator substrate. The image sensing substrate has a plurality of image sensing pixels. The scintillator substrate is disposed opposite to the image sensing substrate and includes a first substrate, a plurality of guiding members, a reflective layer and a scintillator layer. The guiding members are disposed on the first substrate and protruded from the first substrate toward the image sensing substrate. The guiding members are located corresponding to the image sensing pixels, respectively. The reflective layer is disposed on the guiding members, and the scintillator layer is disposed between the reflective layer and the image sensing substrate.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 29/786 - Thin-film transistors

Abstract

A detection device is provided. The detection device includes a substrate having a first surface and a second surface, and the first surface is disposed opposite to the second surface. The detection device also includes a switch element disposed on the first surface, and a light sensing element disposed on the first surface and electrically connected to the switch element. The detection device also includes a first circuit disposed on the second surface. The substrate has a first through-via, and the switch element is electrically connected to the first circuit through the first through-via.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• H04N 5/32 - Transforming X-rays
• G01T 1/24 - Measuring radiation intensity with semiconductor detectors

Abstract

A panel device includes a substrate, a common electrode, and an electrostatic protection component. The substrate includes an active area and a peripheral area, the peripheral area is outside of the active area, and a plurality of signal lines is disposed on the substrate. The common electrode is disposed on the substrate, and at least part of the common electrode is disposed in the peripheral area. The electrostatic protection component is disposed in the peripheral area of the substrate and electrically connected to one of the plurality of signal lines and the common electrode, and the electrostatic protection component includes a first double-gate transistor. The first double-gate transistor includes a first gate, a second gate, a first electrode and a second electrode. The first gate is electrically connected to the first electrode, and the second gate is electrically connected to the second electrode.

IPC Classes  ?

• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
• H01L 29/786 - Thin-film transistors
• H01L 27/146 - Imager structures
• H01L 23/60 - Protection against electrostatic charges or discharges, e.g. Faraday shields
• G02F 1/1362 - Active matrix addressed cells

Abstract

A detecting device is provided. The detecting device includes a substrate, at least one transistor, at least one detecting element, and a scintillator layer. The transistor is disposed on the substrate. The detecting element is disposed on the transistor and electrically connects to the transistor. The detecting element includes a first electrode layer, a semiconductor layer, and a second electrode layer. The semiconductor layer is disposed on the first electrode layer, and the second electrode layer is disposed on the semiconductor layer. The scintillator layer is disposed on one side of the substrate, wherein at least one corner area of the scintillator layer has a curved structure or a chamfered structure.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H01L 31/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
• H01L 31/115 - Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
• G01T 1/20 - Measuring radiation intensity with scintillation detectors

Abstract

A light detection device and an operating method thereof are provided in the present disclosure. The light detection device includes a housing, a sensing substrate, a scintillator layer, and a light source module. The sensing substrate is disposed inside the housing. The scintillator layer is disposed inside the housing and disposed above the sensing substrate. The light source module is at least partially disposed inside the housing. The operating method of the light detection device includes the following steps. The light detection device is turned on and first image data is captured. The light source module is turned on and second image data is captured. The first image data is compared with the second image data for determining a condition of the light detection device.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• H04N 5/32 - Transforming X-rays

Abstract

A sensor device is provided and includes a first transistor, a second transistor, a third transistor, and a photosensor. The first transistor has a first gate, a first drain, and a first source. The first drain is coupled to a first power line and has a concave surface, and the first source is disposed corresponding to the concave surface. The second transistor has a second source, coupled to the first gate. The third transistor has a third gate, a third drain, and a third source, the third drain is coupled to the first source, the third source is coupled to the data line, and the third gate is coupled to the readout line. The photosensor is coupled to the first gate.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H01L 29/786 - Thin-film transistors

Abstract

A pixel circuit of an X-ray sensor includes a photo diode, a first transistor, a second transistor and a third transistor. The photo diode is used to sense X-rays and to generate a corresponding electrical sensing signal. The first transistor is electrically connected with the photo diode to reset the electrical sensing signal. The second transistor is electrically connected with the photo diode to amplify the electrical sensing signal and to generate an amplified sensing signal. The third transistor is electrically connected with the second transistor to output the amplified sensing signal. The second transistor has a terminal electrically connected with a high voltage, and the first transistor has a terminal electrically connected with a calibration voltage. The high voltage and the calibration voltage are controlled separately.

IPC Classes  ?

• G01T 1/205 - Measuring radiation intensity with scintillation detectors the detector being a gas
• G01N 23/04 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by transmitting the radiation through the material and forming images of the material
• G01T 1/208 - Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section
• G01T 1/20 - Measuring radiation intensity with scintillation detectors
• H01L 27/146 - Imager structures

Abstract

An X-ray image detection system includes a charge accumulation device, a switch device, a comparator device and an analog to digital converter. The charge accumulation device receives current produced by a pixel and converts the current to a voltage signal. The switch device has an input terminal, a first output terminal, and a second output terminal. The input terminal is connected to the charge accumulation device to receive the voltage signal. The comparator device is connected to the first output terminal for generating first or second indication signal according to the voltage signal. The analog to digital converter is connected to the second terminal. When the first indication signal is generated, the input terminal of the switch device is connected to the first output terminal. When the second indication signal is generated, the input terminal of the switch device is connected to the second output terminal.

IPC Classes  ?

• A61B 6/00 - Apparatus or devices for radiation diagnosisApparatus or devices for radiation diagnosis combined with radiation therapy equipment

Abstract

An active matrix image sensing panel comprises a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and comprises a scan line, a data line crossing the scan line, a photo sensing element and a TFT element. The photo sensing element includes a first terminal electrode and a second terminal electrode, and the voltage of the first terminal electrode is higher than that of the second terminal electrode. The TFT element includes a first electrode, a second electrode, a first gate electrode and a second gate electrode. The first electrode is electrically connected to the data line, the second electrode is electrically connected to the first terminal electrode, the first gate electrode is electrically connected to the scan line, and the second gate electrode is electrically connected to the first or second terminal electrode. An active matrix image sensing apparatus is also disclosed.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G06F 1/16 - Constructional details or arrangements