Methods for forming a vapor deposition precursor are provided. The method comprises contacting a metal halide compound, a Grignard reagent, and a carbodiimide compound to form the vapor deposition precursor. The vapor deposition precursor comprises at least one of an indium amidinate, a gallium amidinate, or any combination thereof. The vapor deposition precursor is formed without use of a pyrophoric compound. Various compositions comprising a vapor deposition precursor and related systems and devices are also provided.
Methods for forming a vapor deposition precursor are provided. The method comprises contacting a metal halide compound, a Grignard reagent, and a carbodiimide compound to form the vapor deposition precursor. The vapor deposition precursor comprises at least one of an indium amidinate, a gallium amidinate, or any combination thereof. The vapor deposition precursor is formed without use of a pyrophoric compound. Various compositions comprising a vapor deposition precursor and related systems and devices are also provided.
C07F 5/00 - Compounds containing elements of Groups 3 or 13 of the Periodic Table
C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
3.
COATED CONDUITS, RELATED SYSTEMS AND RELATED METHODS
Systems comprising coated components are described. A system includes a first subsystem located in a sub-fabrication area of a semiconductor manufacturing facility, a second subsystem located in a fabrication area of the semiconductor manufacturing facility, and a conduit connecting the first subsystem to the second subsystem. The conduit has an inner surface and an outer surface and a protective coating formed on the inner surface. Coated components and related methods are also described.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, abrasive particles dispersed in the liquid carrier, an iron-containing accelerator, a stabilizer bound to the iron-containing accelerator, at least one inhibitor of tungsten etching, the inhibitor of tungsten etching including at least one nitrogen containing group, and a substituted piperazine compound.
Methods for forming yttrium complexes are provided herein. A method for forming a yttrium complex comprises contacting a yttrium trihalide adduct with a cyclopentadienyl compound in a presence of a solvent to form a yttrium complex. Compositions are provided. A composition comprises a precursor compound. The precursor compound comprises a yttrium complex formed according to the methods disclosed herein. Various other methods and compositions are provided herein.
Systems comprising coated components are described. A system includes a first subsystem located in a sub-fabrication area of a semiconductor manufacturing facility, a second subsystem located in a fabrication area of the semiconductor manufacturing facility, and a conduit connecting the first subsystem to the second subsystem. The conduit has an inner surface and an outer surface and a protective coating formed on the inner surface. Coated components and related methods are also described.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, ceria particles dispersed in the liquid carrier, the ceria particles having a weight average particle size of greater than 90 nm as measured using a CPS Disc Centrifuge Particle size analyzer and a BET surface area of greater than 50 m2/g; and a hydroxamic acid or a pyrone compound.
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, ceria particles dispersed in the liquid carrier; and a hydroxamic acid compound, wherein the hydroxamic compound comprises at least one of (i) a non-cyclic alkyl group having from three to ten carbon atoms, (ii) a halide-substituted phenyl group, (iii) a phenyl group or a substituted phenyl group and an alkyl linking group coupling the phenyl group or substituted phenyl group to a hydroxamic acid group, and (iv) a hydroxamic acid compound having a partition coefficient of at least about 0.9.
Methods for forming yttrium complexes are provided herein. A method for forming a yttrium complex comprises contacting a yttrium trihalide adduct with a cyclopentadienyl compound in a presence of a solvent to form a yttrium complex. Compositions are provided. A composition comprises a precursor compound. The precursor compound comprises a yttrium complex formed according to the methods disclosed herein. Various other methods and compositions are provided herein.
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, ceria particles dispersed in the liquid carrier; and a hydroxamic acid compound, wherein the hydroxamic compound comprises at least one of (i) a non-cyclic alkyl group having from three to ten carbon atoms, (ii) a halide-substituted phenyl group, (iii) a phenyl group or a substituted phenyl group and an alkyl linking group coupling the phenyl group or substituted phenyl group to a hydroxamic acid group, and (iv) a hydroxamic acid compound having a partition coefficient of at least about 0.9.
Provided are certain silyl amine compounds useful as precursors in the vapor deposition of silicon-containing materials onto the surfaces of microelectronic devices. Such precursors can be utilized with optional co-reactants to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
12.
SELECTIVE DEPOSITION OF COBALT AND RUTHENIUM, AND RELATED STRUCTURES
Described are methods of selectively depositing a cobalt or ruthenium seed layer onto a semiconductor substrate, methods of forming a conductive contact on the semiconductor substrate, and semiconductor substrates formed according to the methods.
A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, ceria particles dispersed in the liquid carrier, the ceria particles having a weight average particle size of greater than 90 nm as measured using a CPS Disc Centrifuge Particle size analyzer and a BET surface area of greater than 50 m2/g; and a hydroxamic acid or a pyrone compound.
Described are methods of selectively depositing a cobalt or ruthenium seed layer onto a semiconductor substrate, methods of forming a conductive contact on the semiconductor substrate, and semiconductor substrates formed according to the methods.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
An assembly for ion implantation is provided herein. An assembly comprises at least one vessel configured to be fluidly coupled to an arc chamber of an ion implantation device. The at least one vessel comprises a gas component comprising BF3 and B2F4. When the gas component is supplied from the at least one vessel to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component. Related systems, including ion implantation systems, and related methods are provided herein.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
3 244. When the gas component is supplied from the at least one vessel to the arc chamber for implantation into a substrate, a beam current of boron ions generated from the gas component is greater than a beam current of boron ions generated from a control gas component. Related systems, including ion implantation systems, and related methods are provided herein.
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
Described are dry process microporous membranes for filtration, wherein at least one layer of the membrane has an average pore size less than 0.035 microns. The membrane may be used in an ultra-filtration or nano-filtration process such as for processing microelectronics or semiconductor processing fluids.
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
18.
FILTERS FOR MICROPROCESSING OR SEMICONDUCTOR PROCESSING FLUIDS
Described are filters and filter products that contain a microporous membrane for filtration, wherein at least one layer of the membrane has an average pore size less than 0.035 microns; the filter or filter product and its membrane may be used in an ultra-filtration or nano-filtration process such as for processing microelectronics or semiconductor processing fluids.
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
19.
SILANE MODIFICATION OF CERIA NANOPARTICLES IN COLLOIDALLY STABLE SOLUTIONS
The invention provides a chemical-mechanical polishing composition comprising (i) ceria abrasive particles, wherein each ceria abrasive particle comprises at least one associated silane comprising at least one moiety of Formula I: Si(R1n(4-n)(4-n), wherein R1, X, and n are as defined herein, and (ii) water. The invention also provides a method of chemicallymechanically polishing a substrate, especially a silicon oxide and/or silicon nitride substrate, by contacting the substrate with the inventive chemical-mechanical polishing composition.
The disclosure provides a UV-cured sub-pad for chemical-mechanical planarization comprising (a) a (meth)acrylate monomer unit and (b) an oligomer unit selected from a difunctional (meth)acrylate-capped polyether urethane oligomer unit, a difunctional (meth)acrylate-capped polyester urethane oligomer unit, a difunctional (meth)acrylate-capped urethane oligomer unit, and a combination thereof. The disclosure also provides a polishing pad for chemical-mechanical planarization comprising a top sheet and a UV-cured sub-pad, a method of preparing the polishing pad, and an apparatus for performing the method of preparing the polishing pad for chemical-mechanical planarization.
B24D 3/00 - Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special natureAbrasive bodies or sheets characterised by their constituents
B24D 18/00 - Manufacture of grinding tools, e.g. wheels, not otherwise provided for
The disclosure provides a UV-cured sub-pad for chemical-mechanical planarization comprising (a) a (meth)acrylate monomer unit and (b) an oligomer unit selected from a difunctional (meth)acrylatecapped polyether urethane oligomer unit, a difunctional (meth)acrylate-capped polyester urethane oligomer unit, a difunctional (meth)acrylate-capped urethane oligomer unit, and a combination thereof. The disclosure also provides a polishing pad for chemical-mechanical planarization comprising a top sheet and a UV-cured sub-pad, a method of preparing the polishing pad, and an apparatus for performing the method of preparing the polishing pad for chemical-mechanical planarization.
The invention provides a composition comprising water, a chelating agent, and a pH adjustor. The invention also provides a method for removing residue from a surface of a microelectronic device substrate comprising contacting the surface of the microelectronic device substrate with a composition comprising water, a chelating agent, and a pH adjustor.
The invention provides a composition comprising water, a chelating agent, and a pH adjustor. The invention also provides a method for removing residue from a surface of a microelectronic device substrate comprising contacting the surface of the microelectronic device substrate with a composition comprising water, a chelating agent, and a pH adjustor.
An electrostatic chuck device having reduced charge injection may include a dielectric layer, a bonding layer, an electrode layer, and an isolator layer, the bonding layer being located between the dielectric layer and the electrode layer, the electrode layer being located between the bonding layer and the isolator layer, and the electrode layer does not directly contact the dielectric layer. The bonding layer comprises a nonelectrically conductive polymeric material that covers the electrode layer such that a surface roughness of an upper surface of the bonding layer is less than a surface roughness of an upper surface of the electrode layer. The electrostatic chuck device may also include a charge barrier layer located between the bonding layer and the electrode layer to further reduce a surface roughness of the bonding layer as compared to the electrode layer. The reduced surface roughness reduces charge injection from the electrode layer.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
25.
HIGH PURITY TIN COMPOUNDS AND RELATED COMPOSITIONS AND RELATED METHODS
Compositions comprising tin (IV) alkoxide compounds useful for extreme ultraviolet lithography are provided. The compositions comprise a highly pure tin (IV) alkoxide compound, with low levels of impurities, including, for example and without limitation, at least one of halide impurities, ammonium impurities, or any combination thereof. Halide-free methods for synthesizing the tin (IV) alkoxide compounds are also provided. Various other compositions and methods are provided.
Reticle supports for use in a reticle container are provided for wear reduction. The reticle supports have a proximate end received in a baseplate. A reticle contact region at the distal end of the reticle support body contacts the reticle to suspend the reticle from the baseplate. The reticle support body allows a lateral movement of the distal end of the reticle support body along with the reticle with respect to the baseplate to prevent the reticle contact region of the reticle supports from sliding on and scratching the surface of reticle.
Compositions are provided for selective removal of a polymeric material from a substrate. The composition comprises at least one solvent; 0.1% to 20% by weight of at least one pH adjuster based on a total weight of the wet etch composition; and 1% to 20% by weight of at least one oxidizer based on the total weight of the wet etch composition. When contacted with a non-ultraviolet treated substrate comprising a first polymeric material and a second polymeric material, the composition selectively removes the first polymeric material. Related systems and related methods are also provided.
Aluminum-containing inhibitor compounds for selective deposition are provided. A method for selective deposition comprises obtaining a substrate having a first surface and a second surface, exposing the substrate to an Al-containing inhibitor to modify the first surface, and selectively depositing a film on the second surface. The aluminum-containing inhibitor compound is a compound comprising a substituted aluminum alkyl. Related systems, related compositions, and related devices, among other things, are further provided.
A purge port assembly for a wafer container includes a purge module configured to allow inlet flow of purge gas and a transition portion disposed over an intermediate outlet of the purge module. The transition portion includes a receiver configured to receive the purge gas discharged from the purge module, an outlet connector configured to attach with a diffuser, and an intermediate conduit. The intermediate conduit connects the receiver to the outlet connector and extends from the receiver at an acute angle relative to an axis of the inlet opening of the receiver. The intermediate conduit has a length that spaces apart the outlet connector from the receiver. A wafer container includes a shell and a purge port assembly. The shell includes an interior space. The purge port assembly extends through an opening in the shell into the interior space.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
30.
COMPOSITIONS FOR SELECTIVE REMOVAL OF POLYMERIC MATERIALS
Compositions are provided for selective removal of a polymeric material from a substrate. The composition comprises at least one solvent; 0.1% to 20% by weight of at least one pH adjuster based on a total weight of the wet etch composition; and 1% to 20% by weight of at least one oxidizer based on the total weight of the wet etch composition. When contacted with a non-ultraviolet treated substrate comprising a first polymeric material and a second polymeric material, the composition selectively removes the first polymeric material. Related systems and related methods are also provided.
Some embodiments of the present disclosure relate to a system, comprising a vessel; at least one tray located in the vessel; a tube extending into the vessel to a location beneath the at least one tray; and a level sensor comprising: at least one reed switch located on the tube; and at least one toroidal magnet, wherein the tube extends through an opening defined by the at least one toroidal magnet, such that the at least one toroidal magnet is slidably engaged with the tube; wherein, when a solid precursor is loaded onto the at least one tray, the at least one toroidal magnet is configured to rest on a surface of the solid precursor; wherein the level sensor is configured to sense changes in the location of the at least one toroidal magnet relative to the at least one reed switch to sense precursor levels within the vessel. Also described is a vessel for delivering solid precursor vapor where a sensor or heater is connected through a gas exchange port of the vessel.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
32.
ELECTROSTATIC CHUCK WITH REDUCED CHARGE INJECTION INTO DIELECTRIC LAYER
An electrostatic chuck device having reduced charge injection may include a dielectric layer, a bonding layer, an electrode layer, and an isolator layer, the bonding layer being located between the dielectric layer and the electrode layer, the electrode layer being located between the bonding layer and the isolator layer, and the electrode layer does not directly contact the dielectric layer. The bonding layer comprises a non-electrically conductive polymeric material that covers the electrode layer such that a surface roughness of an upper surface of the bonding layer is less than a surface roughness of an upper surface of the electrode layer. The electrostatic chuck device may also include a charge barrier layer located between the bonding layer and the electrode layer to further reduce a surface roughness of the bonding layer as compared to the electrode layer. The reduced surface roughness reduces charge injection from the electrode layer.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C09J 123/28 - Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bondAdhesives based on derivatives of such polymers modified by chemical after-treatment by reaction with halogens or halogen-containing compounds
33.
LEVEL SENSORS FOR PRECURSOR VESSELS AND RELATED SYSTEMS AND RELATED METHODS
Some embodiments of the present disclosure relate to a system, comprising a vessel; at least one tray located in the vessel; a tube extending into the vessel to a location beneath the at least one tray; and a level sensor comprising: at least one reed switch located on the tube; and at least one toroidal magnet, wherein the tube extends through an opening defined by the at least one toroidal magnet, such that the at least one toroidal magnet is slidably engaged with the tube; wherein, when a solid precursor is loaded onto the at least one tray, the at least one toroidal magnet is configured to rest on a surface of the solid precursor; wherein the level sensor is configured to sense changes in the location of the at least one toroidal magnet relative to the at least one reed switch to sense precursor levels within the vessel. Also described is a vessel for delivering solid precursor vapor where a sensor or heater is connected through a gas exchange port of the vessel.
G01F 23/72 - Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by floats of the free float type using magnetically actuated indicating means
C23C 16/52 - Controlling or regulating the coating process
34.
HIGH PURITY TIN COMPOUNDS AND RELATED COMPOSITIONS AND RELATED METHODS
Compositions comprising tin (IV) alkoxide compounds useful for extreme ultraviolet lithography are provided. The compositions comprise a highly pure tin (IV) alkoxide compound, with low levels of impurities, including, for example and without limitation, at least one of halide impurities, ammonium impurities, or any combination thereof. Halide-free methods for synthesizing the tin (IV) alkoxide compounds are also provided. Various other compositions and methods are provided.
Reticle supports for use in a reticle container are provided for wear reduction. The reticle supports have a proximate end received in a baseplate. A reticle contact region at the distal end of the reticle support body contacts the reticle to suspend the reticle from the baseplate. The reticle support body allows a lateral movement of the distal end of the reticle support body along with the reticle with respect to the baseplate to prevent the reticle contact region of the reticle supports from sliding on and scratching the surface of reticle.
Aluminum-containing inhibitor compounds for selective deposition are provided. A method for selective deposition comprises obtaining a substrate having a first surface and a second surface, exposing the substrate to an Al-containing inhibitor to modify the first surface, and selectively depositing a film on the second surface. The aluminum-containing inhibitor compound is a compound comprising a substituted aluminum alkyl. Related systems, related compositions, and related devices, among other things, are further provided.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/04 - Coating on selected surface areas, e.g. using masks
Reticle containers can include reinforcement supports that include support features configured to contact and thereby support corner contacts when shocks deflect corner contacts of the reticle container. The reinforcement supports can be integral to a portion of the reticle container such as a cover portion thereof, or provided on an insert configured to attach to a feature of the reticle container. The reinforcement supports can attach over the corner contacts. The reinforcement supports can additionally include contact regions configured to receive contact from the reticle in the event of a shock.
B65D 81/05 - Containers, packaging elements, or packages, for contents presenting particular transport or storage problems, or adapted to be used for non-packaging purposes after removal of contents specially adapted to protect contents from mechanical damage maintaining contents at spaced relation from package walls, or from other contents
B65D 25/10 - Devices to locate articles in containers
B65D 85/30 - Containers, packaging elements or packages, specially adapted for particular articles or materials for articles particularly sensitive to damage by shock or pressure
38.
AREA SELECTIVE DEPOSITION OF ALUMINUM BASED FILMS USING ALKYL ALUMINUM AMIDINATE PRECURSORS
Area selective deposition of aluminum-based films using alkyl aluminum amidinate precursors and methods thereof are provided. Area selective deposition comprises depositing an alkyl aluminum amidinate precursor on a substrate with a first surface portion comprising a metal and a second surface portion comprising a non-metal to form an aluminum-based film on the substrate. The aluminum-based film will be located on the second surface portion of the substrate and when the aluminum-based film is located on the first surface portion, a ratio of an average thickness of the film on the first surface portion to an average thickness of the film on the second surface portion is less than 1.
Area selective deposition of aluminum-based films using alkyl aluminum amidinate precursors and methods thereof are provided. Area selective deposition comprises depositing an alkyl aluminum amidinate precursor on a substrate with a first surface portion comprising a metal and a second surface portion comprising a non-metal to form an aluminum-based film on the substrate. The aluminum-based film will be located on the second surface portion of the substrate and when the aluminum-based film is located on the first surface portion, a ratio of an average thickness of the film on the first surface portion to an average thickness of the film on the second surface portion is less than 1.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/04 - Coating on selected surface areas, e.g. using masks
Reticle containers can include reinforcement supports that include support features configured to contact and thereby support corner contacts when shocks deflect corner contacts of the reticle container. The reinforcement supports can be integral to a portion of the reticle container such as a cover portion thereof, or provided on an insert configured to attach to a feature of the reticle container. The reinforcement supports can attach over the corner contacts. The reinforcement supports can additionally include contact regions configured to receive contact from the reticle in the event of a shock.
G03F 1/66 - Containers specially adapted for masks, mask blanks or pelliclesPreparation thereof
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Some embodiments relate to a precursor comprising a precursor for vapor deposition. The precursor comprises an aliphatic hydrocarbon and at least one disilylamine group. The at least one disilylamine group is attached to the aliphatic hydrocarbon. The at least one disilylamine group does not comprise a silanide group. Some embodiments relate to a method for making the precursor. The method comprises reacting a polyamine compound and a silylhalide compound in a presence of a base to form a precursor useful for vapor deposition. Some embodiments relate to a method for forming a silicon-containing film using the precursor.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
C23C 16/513 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Some embodiments of the present disclosure relate to a cleaning device including a first material having at least a first function; and a second material having at least a second function, wherein, when a probe card contacts the body, the cleaning device performs at least the first function and at least the second function.
B24B 27/033 - Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 7/24 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
B24B 7/30 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding plastics
An overpack assembly and a method of making an overpack assembly is disclosed. The overpack assembly includes a liner positioned within an overpack. In one embodiment, the method includes making a liner including providing a first sheet including a fitment positioned over a second sheet, the first sheet attached to the second sheet along an attachment seam at an entire perimeter edge. The first sheet is pulled apart from the second sheet at a center of the liner, forming a three-dimensional liner with triangular wings. A vertical seam is formed across each triangular wing, the vertical seam being perpendicular to the attachment seam, where a length of the vertical seam corresponds to the height of the liner when in use. The liner is positioned within the overpack.
Provided are certain composite membranes useful for removing various impurities from liquids. In certain aspects, the composite membranes comprise a hydrophobic polymer having a polyamide coated thereon, and in other aspects, such composite membranes having certain acrylic polymers coated thereon. The composite membranes are useful in the removal of various impurities in liquids, such as those encountered in industrial and life sciences processes.
B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
Some embodiments of the present disclosure relate to a cleaning device including a first material having at least a first function; and a second material having at least a second function, wherein, when a probe card contacts the body, the cleaning device performs at least the first function and at least the second function.
Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.
Systems for delivering precursors and related methods are provided. A system comprises at least one first container, at least one second container, at least one deposition chamber, a first conduit connecting the at least one first container to the at least one second container, and a second conduit connecting the at least one second container to the at least one deposition chamber. The first conduit is configured for delivering a vaporized precursor, at a first temperature, from the at least one first container to the at least one second container. The second conduit is configured for delivering the vaporized precursor, at a second temperature, from the at least one second container to the at least one deposition chamber. The first temperature is less than the second temperature.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
48.
MULTI-LAYER POROUS POLYMERIC MEMBRANE AND RELATED FILTERS AND METHODS
Described are assemblies of porous polymeric filter membranes that include two polymeric filter membranes in series, i.e., as part of a membrane assembly; filter components and filter products that include the two polymeric filter membrane layers; methods of assembling the polymeric filter membranes, filter components, and filter products; and methods of using the polymeric filter membranes to remove particles from a liquid such as a semiconductor processing liquid fluid.
B01D 27/14 - Cartridge filters of the throw-away type having more than one filtering element
B01D 29/00 - Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups Filtering elements therefor
B01D 29/05 - Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups Filtering elements therefor with flat filtering elements supported
B01D 39/16 - Other self-supporting filtering material of organic material, e.g. synthetic fibres
49.
SYSTEMS FOR DELIVERING PRECURSORS AND RELATED METHODS
Systems for delivering precursors and related methods are provided. A system comprises at least one first container, at least one second container, at least one deposition chamber, a first conduit connecting the at least one first container to the at least one second container, and a second conduit connecting the at least one second container to the at least one deposition chamber. The first conduit is configured for delivering a vaporized precursor, at a first temperature, from the at least one first container to the at least one second container. The second conduit is configured for delivering the vaporized precursor, at a second temperature, from the at least one second container to the at least one deposition chamber. The first temperature is less than the second temperature.
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
50.
METHOD FOR SELECTIVE DEPOSITION ON DIELECTRIC MATERIALS
A method includes forming a structure, and the structure includes a first dielectric layer made of silicon oxide and a second dielectric layer made of silicon nitride. The method further includes performing a selective deposition process for depositing a third dielectric layer made of silicon oxide on the first dielectric layer. Performing the selective deposition process includes performing one or more deposition cycles. Performing a deposition cycle includes introducing a silicon-containing precursor over the structure. The silicon-containing precursor comprises a siloxane material having a chemical formula SiaHb(CH3)2a+1−b—O—SicHd(CH3)2c+1−d, where a, c=1 or 2, and b, d≤2a+1. Molecules of the silicon-containing precursor are selectively adsorbed on an exposed surface of the first dielectric layer. Performing the deposition cycle further includes introducing an oxygen-containing precursor over the structure. Molecules of the oxygen-containing precursor react with the molecules of the silicon-containing precursor to form a silicon oxide sub-layer of the third dielectric layer.
Described are metal bodies made of magnesium-containing metal and having a magnesium fluoride surface passivation region formed at a surface of the body, as well as methods of forming a magnesium fluoride surface passivation region at a surface of a metal body, and uses for the bodies.
C23C 22/02 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
C22C 21/08 - Alloys based on aluminium with magnesium as the next major constituent with silicon
C23C 22/73 - Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals characterised by the process
52.
A METHOD FOR SELECTIVE DEPOSITION ON DIELECTRIC MATERIALS
ab32a+1-bcd32c+1-d2c+1-d, where a, c=1 or 2, and b, d≤2a+1. Molecules of the silicon-containing precursor are selectively adsorbed on an exposed surface of the first dielectric layer. Performing the deposition cycle further includes introducing an oxygen-containing precursor over the structure. Molecules of the oxygen-containing precursor react with the molecules of the silicon-containing precursor to form a silicon oxide sub-layer of the third dielectric layer.
Multi-metal oxide coatings, and related devices and related methods are provided, among other things. A device comprises a substrate, and a coating on the substrate. The coating comprises a multi-metal oxide. The multi-metal oxide comprises a first species and a second species. A concentration of at least one of the first species, the second species, or any combination thereof, varies through a thickness of the coating. The device can be a component used in a semiconductor manufacturing process.
Described are storage and dispensing systems and related methods, for the storage and selective dispensing germane a reagent gas from a vessel in which the reagent gas is held in sorptive relationship to a solid adsorbent medium at an interior of a storage vessel and wherein the methods and dispensing systems provide dispensing of the reagent gas from the storage vessel with a reduced level of atmospheric impurities contained in the dispensed reagent gas.
F17C 11/00 - Use of gas-solvents or gas-sorbents in vessels
B01D 53/02 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography
B01J 20/20 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material comprising free carbonSolid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material comprising carbon obtained by carbonising processes
B01J 20/30 - Processes for preparing, regenerating or reactivating
55.
PHOTOLITHOGRAPHY SUBSTRATE WITH PURGE FLOW DIRECTION
A photolithography substrate container includes an inlet configured to receive purge gas, baffles, a photolithography substrate accommodation space, and an outlet for the purge gas. The baffles can affect the flow of purge gas received at the inlet to control flow rates, pressure differentials, and the like for the flow of purge gas through the photolithography substrate accommodation space. The baffles can be provided between the inlet and the photolithography substrate accommodation space. The baffles can be included on one or more parts of the photolithography substrate container or on an insert configured to be attached thereto.
G03F 1/66 - Containers specially adapted for masks, mask blanks or pelliclesPreparation thereof
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
56.
MULTI-METAL OXIDE COATINGS, RELATED DEVICES AND METHODS
Multi-metal oxide coatings, and related devices and related methods are provided, among other things. A device comprises a substrate, and a coating on the substrate. The coating comprises a multi-metal oxide. The multi-metal oxide comprises a first species and a second species. A concentration of at least one of the first species, the second species, or any combination thereof, varies through a thickness of the coating. The device can be a component used in a semiconductor manufacturing process.
Disclosed herein are membranes having a first surface, a second surface opposing the first surface, a skin at the first surface having visible pores when viewed at a magnification of 10,000 and a pore size gradient, wherein pore size increases from the second surface to the skin.
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
B01D 65/10 - Testing of membranes or membrane apparatusDetecting or repairing leaks
B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
A photolithography substrate container includes an inlet configured to receive purge gas, baffles, a photolithography substrate accommodation space, and an outlet for the purge gas. The baffles can affect the flow of purge gas received at the inlet to control flow rates, pressure differentials, and the like for the flow of purge gas through the photolithography substrate accommodation space. The baffles can be provided between the inlet and the photolithography substrate accommodation space. The baffles can be included on one or more parts of the photolithography substrate container or on an insert configured to be attached thereto.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
59.
METHODS, DEVICES, AND SYSTEMS FOR MEASURING A CONCENTRATION OF AN AMINE-BASED COMPOUND IN AN ETCHING SOLUTION
Described are methods of measuring a concentration of a photosensitive group in a liquid, for example a concentration of amine-based inhibitor in an etching solution, and related equipment and systems.
G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
Described are methods of measuring a concentration of a photosensitive group in a liquid, for example a concentration of amine-based inhibitor in an etching solution, and related equipment and systems.
G01N 21/78 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
G01N 21/77 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
In summary, the disclosure provides certain membranes useful as filter materials in the removal of metal ions, metal particulates, and/or organic contaminants from liquid compositions, in particular liquid compositions used in the microelectronic device industry. The membranes of the disclosure are porous membranes comprised of poly(quinoline) polymers. Advantageously, the poly(quinoline) membranes are thermally stable and hydrolytically stable and can thus be cleaned between uses using acidic material such as dilute hydrochloric acid, without suffering from significant degradation. The poly(quinoline) polymers can be designed to be soluble in certain solvents, thus enabling the manufacture of the corresponding porous membranes by immersion-casting techniques.
B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
An electrostatic chuck includes an electrode and a dielectric layer. When a voltage is applied to the electrode, the electrode is configured to generate an electrostatic force sufficient to flatten a non-flat substrate. The voltage applied to the electrode generates the electrostatic force sufficient to flatten the non-flat substrate such that a surface of the flattened substrate is substantially in contact with a surface of the electrostatic chuck.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
63.
DEVICES FOR LED PIXEL CIRCUITRY INCLUDING HIGH-K DIELECTRIC MATERIALS AND METHODS OF FORMING THE SAME
A method includes forming a feature on a substrate. A deposition process is performed for depositing a high-K dielectric layer on a top and sidewalls of the feature. Performing the deposition process includes performing one or more deposition cycles at a process temperature ranging from about 50°C to about 200°C. The metal-containing precursor includes a core metal and a ligand. Molecules of the metal-containing precursor are adsorbed on the top and sidewalls of the feature to provide a highly uniform dielectric layer having step a coverage of at least 90%.
H10D 86/00 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
64.
HIGH CLAMP FORCE ELECTROSTATIC CHUCK FOR NON-FLAT SUBSTRATES
An electrostatic chuck includes an electrode and a dielectric layer. When a voltage is applied to the electrode, the electrode is configured to generate an electrostatic force sufficient to flatten a non-flat substrate. The voltage applied to the electrode generates the electrostatic force sufficient to flatten the non-flat substrate such that a surface of the flattened substrate is substantially in contact with a surface of the electrostatic chuck.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
65.
RETICLE CONTAINER HAVING ROTATING CONNECTOR WITH SPRING FORCE LATCHING
Reticle containers include a rotating latch including a spring. The spring provides force bringing the segments of the reticle container towards one another such that a reticle in the container is clamped between the container segments. The rotating latch can include a head as part of an assembly on one of a cover or a baseplate of the reticle container, with a slot configured to accommodate the head provided on the other of the cover or baseplate. The head can be disposed at an end of a shaft, with the shaft connected to a base, which is contacted by spring providing force such that the contact of the head with the other of the cover or baseplate provides clamping force to a reticle stored between the cover and baseplate.
Tin precursor compounds and related compositions and methods are provided. A composition comprises a compound of the formula: where: a + b = 2 or 4; R1independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, or any combination thereof; R2independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, an amine, an alkoxide, or any combination thereof; E independently comprises N(R3), O, or S, where: R3 independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, or any combination thereof; and Q independently comprises a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, an amine, an alkoxide, a halogen, or any combination thereof. Other precursor compounds, compositions, and methods are provided.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Tin precursor compounds and related compositions and methods are provided. A composition comprises a compound of the formula:
Tin precursor compounds and related compositions and methods are provided. A composition comprises a compound of the formula:
[(R1)NC(R2)E]aSn(Q)b,
where: a+b=2 or 4; R1 independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, or any combination thereof; R2 independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, an amine, an alkoxide, or any combination thereof; E independently comprises N(R3), O, or S, where: R3 independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, or any combination thereof; and Q independently comprises a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, an amine, an alkoxide, a halogen, or any combination thereof. Other precursor compounds, compositions, and methods are provided.
Described are filtration membranes that include a porous polyimide membrane and thermally stable ionic groups; filters and filter components that include these filtration membranes; methods of making the filtration membranes, filters, and filter components; and method of using a filtration membrane, filter component, or filter to remove unwanted material from fluid.
B01D 65/00 - Accessories or auxiliary operations, in general, for separation processes or apparatus using semi-permeable membranes
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
B01D 71/64 - PolyimidesPolyamide-imidesPolyester-imidesPolyamide acids or similar polyimide precursors
C07C 41/36 - SeparationPurificationStabilisationUse of additives by solid-liquid treatmentSeparationPurificationStabilisationUse of additives by chemisorption
C07C 67/56 - SeparationPurificationStabilisationUse of additives by solid-liquid treatmentSeparationPurificationStabilisationUse of additives by chemisorption
Substrate containers include a deformable surface configured to deflect into an internal space so as to reduce the volume of said internal space when the reticle pod is opened. The deformable surface can be a filter, for example a filter supported by a deformable member, a filter including a deformable member, a filter that is retained under tension in the substrate container, or a filter disposed on a deformable member.
G03F 1/66 - Containers specially adapted for masks, mask blanks or pelliclesPreparation thereof
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
70.
LASER ABLATION APPLICATIONS FOR ELECTROSTATIC CHUCKS
Electrostatic chucks and methods for forming electrostatic chucks are provided. A method comprises obtaining a substrate comprising an etch resistant coating layer; ablating, with a laser, the etch resistant coating layer so as to remove at least a portion of the etch resistant coating layer so as to provide one or more exposed portions of the substrate; and forming an electrostatic chuck, wherein, when measuring an electrical resistance across the one or more exposed portions of the substrate between two metallized portions, the electrostatic chuck exhibits an electrical isolation of 300 GΩ or more. An electrostatic chuck comprises a substrate having at least one etch resistant coating layer comprising a laser ablated pattern, wherein the laser ablated pattern comprises one or more exposed portions of the substate spanning distances of at least 0.5 mm.
B23K 37/04 - Auxiliary devices or processes, not specially adapted for a procedure covered by only one of the other main groups of this subclass for holding or positioning work
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
B23K 26/354 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
71.
PURIFYING PRECURSOR COMPOUNDS AND RELATED SYSTEMS AND METHODS
Systems and methods for purifying precursor compounds are provided. A method comprises one or more of the following steps: mixing a crude product solution with a first solvent, wherein the crude product solution comprises a precursor compound and at least one impurity; wherein a boiling point of the first solvent is greater than a boiling point of the crude product solution; feeding a mixture of at least the crude product solution and the first solvent to an evaporator; and collecting, from the evaporator, a distillate comprising the precursor compound, wherein a purity of the precursor compound in the distillate is greater than 95% as determined by 1H NMR. Other methods and systems are provided herein.
Systems and methods for purifying precursor compounds are provided. A method comprises one or more of the following steps: mixing a crude product solution with a first solvent, wherein the crude product solution comprises a precursor compound and at least one impurity; wherein a boiling point of the first solvent is greater than a boiling point of the crude product solution; feeding a mixture of at least the crude product solution and the first solvent to an evaporator; and collecting, from the evaporator, a distillate comprising the precursor compound, wherein a purity of the precursor compound in the distillate is greater than 95% as determined by 1H NMR. Other methods and systems are provided herein.
B01D 3/34 - Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping with one or more auxiliary substances
B01D 1/22 - Evaporating by bringing a thin layer of the liquid into contact with a heated surface
Substrate containers include a deformable surface configured to deflect into an internal space so as to reduce the volume of said internal space when the reticle pod is opened. The deformable surface can be a filter, for example a filter supported by a deformable member, a filter including a deformable member, a filter that is retained under tension in the substrate container, or a filter disposed on a deformable member.
Electrostatic chucks and methods for forming electrostatic chucks are provided. A method comprises obtaining a substrate comprising an etch resistant coating layer; ablating, with a laser, the etch resistant coating layer so as to remove at least a portion of the etch resistant coating layer so as to provide one or more exposed portions of the substrate; and forming an electrostatic chuck, wherein, when measuring an electrical resistance across the one or more exposed portions of the substrate between two metallized portions, the electrostatic chuck exhibits an electrical isolation of 300 GΩ or more. An electrostatic chuck comprises a substrate having at least one etch resistant coating layer comprising a laser ablated pattern, wherein the laser ablated pattern comprises one or more exposed portions of the substrate spanning distances of at least 0.5 mm.
Described are methods and apparatus that are useful to for purifying a substrate container that is used to hold, store, or transport semiconductor substrates.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
76.
FILTRATION MEMBRANES, SYSTEMS, AND METHODS FOR PRODUCING PURIFIED WATER
Described are filter membranes, related systems, and related method useful for producing purified (e.g., ultrapure) water, including membranes, systems, and methods of preparing purified water that will be useable in processes of manufacturing electronic and semiconductor devices.
Methods for purifying bis (arene) nickel complex products and related products are provided. A method comprises obtaining a crude mixture comprising a bis (arene) nickel complex and at least one impurity; obtaining a separation solvent; distilling the separation solvent to generate a distilled separation solvent; filtering the crude mixture with the distilled separation solvent so as to obtain a filtrate comprising the distilled separation solvent and at least a portion of the bis (arene) nickel complex; and removing the separation solvent from the filtrate so as to obtain a purified bis (arene) nickel complex product.
Methods for purifying bis (arene) nickel complex products and related products are provided. A method comprises obtaining a crude mixture comprising a bis (arene) nickel complex and at least one impurity, dissolving the crude mixture in a recrystallization solvent so as to obtain a saturated solution of the crude mixture, recrystallizing the bis (arene) nickel complex, and removing the recrystallization solvent so as to obtain a purified bis (arene) nickel complex product.
Described are methods and apparatus that are useful for purifying a substrate container that is used to hold, store, or transport semiconductor substrates. A purification system for purifying the substrate container, the substrate container comprising: a container body comprising an opening; a door adapted to cover the opening; an interior defined by the container body; and a gas within the interior, comprises: a contaminant removal device in fluid communication with the interior; and a control system adapted to measure a concentration of airborne molecular contaminant in the gas.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
B01D 53/30 - Controlling by gas-analysis apparatus
B01D 53/72 - Organic compounds not provided for in groups , e.g. hydrocarbons
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
80.
METHODS FOR PURIFYING BIS (ARENE) NICKEL COMPLEXES AND RELATED PRODUCTS
Methods for purifying bis (arene) nickel complex products and related products are provided. A method comprises obtaining a crude mixture comprising a bis (arene) nickel complex and at least one impurity; obtaining a separation solvent; distilling the separation solvent to generate a distilled separation solvent; filtering the crude mixture with the distilled separation solvent so as to obtain a filtrate comprising the distilled separation solvent and at least a portion of the bis (arene) nickel complex; and removing the separation solvent from the filtrate so as to obtain a purified bis (arene) nickel complex product.
Methods for purifying bis (arene) nickel complex products and related products are provided. A method comprises obtaining a crude mixture comprising a bis (arene) nickel complex and at least one impurity, dissolving the crude mixture in a recrystallization solvent so as to obtain a saturated solution of the crude mixture, recrystallizing the bis (arene) nickel complex, and removing the recrystallization solvent so as to obtain a purified bis (arene) nickel complex product.
Method for purifying metal halide precursors, and related compositions, related methods, and the like. A method comprises one or more of the following steps: obtaining a metal halide precursor, the metal halide precursor comprising a metal halide compound and at least one impurity; contacting the metal halide precursor with an oxygen-containing compound in a presence of a polar oxygen-free solvent to form a reaction product in solution; and separating the reaction product from at least one of at least a portion of the at least one impurity, at least a portion of the solution, or any combination thereof. Other compositions and methods are provided herein.
Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.
C23C 28/04 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of inorganic non-metallic material
B01D 39/20 - Other self-supporting filtering material of inorganic material, e.g. asbestos paper or metallic filtering material of non-woven wires
B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Method for purifying metal halide precursors, and related compositions, related methods, and the like. A method comprises one or more of the following steps: obtaining a metal halide precursor, the metal halide precursor comprising a metal halide compound and at least one impurity; contacting the metal halide precursor with an oxygen-containing compound in a presence of a polar oxygen-free solvent to form a reaction product in solution; and separating the reaction product from at least one of at least a portion of the at least one impurity, at least a portion of the solution, or any combination thereof. Other compositions and methods are provided herein.
Polymers of the present disclosure include aromatic fluoropolymers or incorporation of fluorine groups into polymers, which can increase the chemical resistance and thermal stability of polymers. The combination of these properties provides for potential uses in membrane applications. Porous membranes obtained from disclosed polymers have improved resistance and chemical stability.
Polymers of the present disclosure include aromatic fluoropolymers or incorporation of fluorine groups into polymers, which can increase the chemical resistance and thermal stability of polymers. The combination of these properties provides for potential uses in membrane applications. Porous membranes obtained from disclosed polymers have improved resistance and chemical stability.
B01D 71/82 - Macromolecular material not specifically provided for in a single one of groups characterised by the presence of specified groups, e.g. introduced by chemical after-treatment
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
87.
TEMPERATURE PROBE INSERT, ASSEMBLY THEREOF, AND KIT THEREOF
A temperature probe insert includes a coupling portion, a first arm extending from the coupling portion, and a second arm extending from the coupling portion. The first arm and the second arm extend from different sides of the coupling portion. The coupling portion includes an aperture that extends through the coupling portion. The first arm and the second arm are configured to contact a storage bag shell and prevent movement of the coupling portion in the opening in the storage bag shell. The aperture is configured to direct a temperature probe into a storage bag disposed in the internal volume of the storage bag shell. A storage bag temperature monitoring assembly includes a temperature probe insert and a storage bag shell. A kit includes a temperature probe insert and a temperature probe.
An equipment front end module. An equipment front end module (EFEM) includes a flow modification feature projecting away from an interior wall of the equipment front end module and extending into an interior of the equipment front end module (EFEM) at an angle. The flow modification feature modifies the flow of gas flowing from a top to a bottom of the EFEM by deflecting gas flow away and/or laminarizing gas flow across an opening of the EFEM, which may improve the purge performance of a wafer carrier docked at the EFEM.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
G05D 7/01 - Control of flow without auxiliary power
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
Ceramic articles and methods for forming ceramic articles are provided. A method comprises one or more of the following steps: obtaining a substrate having at least one defect; contacting, under deposition conditions, the substrate with at least a first precursor to form a coated substrate comprising a first coating on the substrate, wherein the coated substrate has a surface roughness value that is less than a surface roughness value of the substrate without the first coating; polishing at least a portion of a surface of the substrate to obtain a substrate having a polished surface; contacting the substrate with a vaporized fluorine-containing precursor to fluorinate a surface of the substrate; and contacting, under deposition conditions, the substrate with at least a second precursor to form a second coated substrate comprising a second coating on the substrate.
C04B 35/10 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminium oxide
90.
TEMPERATURE PROBE INSERT, ASSEMBLY THEREOF, AND KIT THEREOF
A temperature probe insert includes a coupling portion, a first arm extending from the coupling portion, and a second arm extending from the coupling portion. The first arm and the second arm extend from different sides of the coupling portion. The coupling portion includes an aperture that extends through the coupling portion. The first arm and the second arm are configured to contact a storage bag shell and prevent movement of the coupling portion in the opening in the storage bag shell. The aperture is configured to direct a temperature probe into a storage bag disposed in the internal volume of the storage bag shell. A storage bag temperature monitoring assembly includes a temperature probe insert and a storage bag shell. A kit includes a temperature probe insert and a temperature probe.
A61J 1/14 - Containers specially adapted for medical or pharmaceutical purposes DetailsAccessories therefor
A61J 1/05 - Containers specially adapted for medical or pharmaceutical purposes for collecting, storing or administering blood, plasma or medical fluids
91.
METHODS FOR CONTROLLING CRYSTALLINE PHASE OF MOLYBDENUM PRECURSORS AND RELATED COMPOSITIONS
Methods for controlling crystalline phase ratios of molybdenum precursors are provided. A method comprises vaporizing, at a first temperature and a first pressure, a molybdenum reagent in a first vessel to obtain a vaporized molybdenum precursor; flowing the vaporized molybdenum precursor from the first vessel to a second vessel; and condensing, at a second temperature and a second pressure, the vaporized molybdenum precursor in the second vessel to obtain a crystalline phase ratio of the molybdenum precursor.
A substrate container is provided including an inner pod configured to accommodate a large format reticle, and an outer pod configured to contain and secure the inner pod. The inner pod can be clamped together using a clip or features provided on the outer pod. Features of the outer pod that can clamp the inner pod include flanges, grooves, angled clamping surfaces, other clamping features, or clamping mechanisms. Clamping mechanisms can be actuated by physical, electrical, and/or magnetic features, such as placement of a door in an opening of a shell, operation of a door latch, or interaction of a tool to release the clamping mechanism using mechanical, electrical, and/or magnetic force.
G03F 1/66 - Containers specially adapted for masks, mask blanks or pelliclesPreparation thereof
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
93.
INHIBITOR COMPOUNDS FOR SELECTIVE PASSIVATION OF SURFACES
Methods for selective passivation for metals and related systems and related methods are provided. A method comprises one or more of the following steps: exposing a substrate to an inhibitor compound to form a first layer on a metal surface of the substrate, wherein the inhibitor compound comprises an alkyne compound functionalized with at least one alkoxy group; and exposing the substrate to a precursor vapor to form a second layer on a non-metal surface of the substrate. Other methods and systems are provided herein.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A substrate container is provided including an inner pod configured to accommodate a large format reticle, and an outer pod configured to contain and secure the inner pod. The inner pod can be clamped together using a clip or features provided on the outer pod. Features of the outer pod that can clamp the inner pod include flanges, grooves, angled clamping surfaces, other clamping features, or clamping mechanisms. Clamping mechanisms can be actuated by physical, electrical, and/or magnetic features, such as placement of a door in an opening of a shell, operation of a door latch, or interaction of a tool to release the clamping mechanism using mechanical, electrical, and/or magnetic force.
B65D 85/68 - Containers, packaging elements or packages, specially adapted for particular articles or materials for machines, engines or vehicles in assembled or dismantled form
B65D 25/10 - Devices to locate articles in containers
B65D 77/04 - Articles or materials enclosed in two or more containers disposed one within another
95.
INHIBITOR COMPOUNDS FOR SELECTIVE PASSIVATION OF SURFACES
Methods for selective passivation for metals and related systems and related methods are provided. A method comprises one or more of the following steps: exposing a substrate to an inhibitor compound to form a first layer on a metal surface of the substrate, wherein the inhibitor compound comprises an alkyne compound functionalized with at least one alkoxy group; and exposing the substrate to a precursor vapor to form a second layer on a non-metal surface of the substrate. Other methods and systems are provided herein.
Articles and methods relating to coatings having superior plasma etch-resistance and which can prolong the life of RIE components are provided. An article has a vacuum compatible substrate and a protective film overlying at least a portion of the substrate. The film comprises a fluorinated metal oxide containing yttrium wherein the yttrium oxide is deposited using an AC power source. The film has a fluorine atomic % of at least 10 at a depth of 30% of the total thickness of the film and the film has no subsurface cracks below the surface of the film visible when using a laser confocal microscope to view the full depth of the film at a magnification of 1000×.
C23C 28/04 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of inorganic non-metallic material
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 23/00 - Details of semiconductor or other solid state devices
Reticle contacts for use in a reticle container are provided having further features for wear reduction. The wear reduction features include one or more of a ring-shaped projection or one or more elongate arcing projections from a reticle contact region, one or more reliefs such as ring-shaped trenches provided in a reticle contact region, or one or more reliefs provided by having relatively thinner regions of the reticle contact region.
Methods for controlling crystalline phase ratios of molybdenum precursors are provided. A method comprises vaporizing, at a first temperature and a first pressure, a molybdenum reagent in a first vessel to obtain a vaporized molybdenum precursor; flowing the vaporized molybdenum precursor from the first vessel to a second vessel; and condensing, at a second temperature and a second pressure, the vaporized molybdenum precursor in the second vessel to obtain a crystalline phase ratio of the molybdenum precursor.
Described are coated porous polymeric filter membranes that include a filter membrane substrate and an ionic polymer coating applied to the surface of the substrate; methods of making the coated porous polymeric filter membranes and filters that include such a coated membrane; and method of using the coated membranes to remove metal ions from purified water.
Reticle contacts for use in a reticle container are provided having further features for wear reduction. The wear reduction features include one or more of a ring-shaped projection or one or more elongate arcing projections from a reticle contact region, one or more reliefs such as ring-shaped trenches provided in a reticle contact region, or one or more reliefs provided by having relatively thinner regions of the reticle contact region.
G03F 1/66 - Containers specially adapted for masks, mask blanks or pelliclesPreparation thereof
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
