An inductive coupling coil is provided, including an inner coil, a middle coil, an outer coil and a first variable capacitor. The middle coil surrounds the inner coil, and the outer coil surrounds the middle coil. The inner coil and the middle coil are connected in series in a first path. A first terminal of the first path is configured to be connected to a radio frequency power source, and a second terminal of the first path is configured to be connected to ground. The middle coil is connected to the first variable capacitor in parallel. The outer coil is in a second path. A first terminal of the second path is configured to be connected to the radio frequency power source, and a second terminal of the second path is configured to be connected to the ground.
An ion beam etching machine and a lower electrode structure thereof. The lower electrode structure comprises an electrode plate, a ring pressing mechanism, and a lifting mechanism, the ring pressing mechanism being configured to support a member to be etched, and the lifting mechanism being configured to drive the ring pressing mechanism to ascend and descend relative to the electrode plate; and same further comprises a position measurement mechanism for measuring a position to which the ring pressing mechanism descends relative to the electrode plate. The lifting mechanism is configured to stop driving the ring pressing mechanism to descend based on measurement information fed back by the position measurement mechanism. The arrangement of the lower electrode structure can avoid fragmenting of the member to be etched, and improve the product yield.
The present invention provides a control method for sidewall contamination of an MRAM magnetic tunnel. In the control method, there is no need to additionally coat an insulation protection layer on the sidewall of an MTJ layer, but a unique funnel-shaped trench is formed during the etching process; the funnel-shaped trench comprises a first area away from a plane where a substrate is located and a second area adjacent to the plane where the substrate is located; the size of the first area in a first direction gradually increases, and the size of the second area in the first direction does not change; and in removing metal contamination on the bottom of the funnel-shaped trench, the funnel-shaped trench can prevent the metal contamination from being attached to the sidewall of the MTJ layer, so as to improve the apparatus performance of an MRAM.
A method for reducing damage to a magnetic tunnel junction (MTJ) of a magnetic random access memory (MRAM), comprising: providing a base structure, where the base structure comprises a substrate, a lower electrode, an MTJ layer, and an upper electrode, which are arranged in the above-listed sequence along a first direction, and the first direction is perpendicular to the substrate and points from the substrate to the lower electrode; performing first etching on a surface of the upper electrode facing away from the substrate until the lower electrode is exposed; pre-processing a sidewall of the MTJ layer to form a modified layer with a preset thickness through reaction at the sidewall of the MTJ layer; and performing second etching until the substrate is exposed.
A plasma treatment method, which is applied to a plasma treatment apparatus, wherein the plasma treatment apparatus comprises an ion source cavity (10), and sediment is present in the ion source cavity (10). The plasma treatment method comprises: introducing cleaning gas into an ion source cavity (10) for ionization to generate a first plasma, so that the first plasma reacts with sediment in the ion source cavity (10) to generate a gas compound, which is then discharged, thereby achieving the aim of cleaning the sediment in the ion source cavity (10).
A double-wall multi-structure quartz cylinder device, belonging to the technical field of ion beam etching. The device specifically includes a quartz cylinder outer wall, at least one quartz cylinder inner liner being provided inside the quartz cylinder outer wall, axes of the two coinciding with each other, and a quartz cylinder inner liner support being connected between the quartz cylinder inner liner and the quartz cylinder outer wall. The quartz cylinder outer wall and the bottom of the quartz cylinder inner liner are connected to a grid mesh, most of etching by-products will be sputtered onto an inner surface of the quartz cylinder inner liner through voids of the grid mesh, and less etching by-products will be attached to an inner wall of the quartz cylinder outer wall, such that the whole radio frequency circuit is less affected by contamination.
A method for etching an MRAM magnetic tunnel junction. The method includes performing a main etching step with an etching amount of t1 by using ion beam etching and/or reactive ion etching, wherein the direction angle of an ion beam is 10°-60°, and the bias voltage of the reactive ion etching is 400 V-1000 V; performing a cleaning step with an etching amount of t2, wherein the bias voltage of the reactive ion etching is 50 V-400 V, the pulse duty ratio is 5%-50%, t1:t2≥0.5, and after the cleaning step is completed, the etching morphology on a bottom electrode or a bottom dielectric layer is square trench; and performing in-situ protection, involving performing in-situ protection on a coating film. RIE is combined with IBE, and by means of the arrangement of an etching sequence and the selection of etching parameters, the the etching effect of small-sized dense magnetic tunnel junctions is significantly improved.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
A lifting and rotating platform device includes a closed housing, a rotary shaft, a rotation driving unit, and a lifting driving unit. The closed housing includes an upper housing, a lower housing, and a middle corrugated pipe connected therebetween. The rotary shaft passes through a shaft hole at an upper end of the upper housing. A dynamic seal is between the rotary shaft and the shaft hole. An object bearing platform is at an upper end of the rotary shaft located outside the closed housing. The rotation driving unit is mounted in the upper housing; and is used to drive the rotary shaft to rotate within the shaft hole. The lifting driving unit is mounted in the lower housing; and is used to drive the rotary shaft to ascend or descend in an axial direction.
A Faraday shielding device includes an electrically conductive ring and a plurality of electrically conductive petal-shaped assemblies radially and symmetrically on the periphery of the electrically conductive ring. Each electrically conductive petal-shaped assembly includes a plurality of electrically conductive plates and connecting capacitors; the electrically conductive plate are at intervals along the radial direction; a connecting capacitor is between every two adjacent electrically conductive plates. Each connection capacitor includes upper and lower electrode plates, the lower end surface of each upper electrode plate and/or the upper end surface of each lower electrode plate has an insulating coating, the lower end surface of the upper electrode plate is connected to the upper end surface of the lower electrode plate, the upper electrode plate is electrically connected to one of the adjacent electrically conductive plate, and the lower electrode plate is electrically connected to the other of the adjacent electrically conductive plates.
A separated gas inlet structure for blocking plasma backflow includes a gas inlet flange and an upper gas inlet nozzle and a lower gas inlet nozzle made of ceramic materials. The upper gas inlet nozzle is coaxially nested or stacked at the top of the lower gas inlet nozzle; a broken line type gas inlet channel is in the upper gas inlet nozzle and the lower gas inlet nozzle and the gas inlet channel includes an upper axial channel, a radial channel, a lower axial channel and a gas outlet; the radial channel or the lower axial channel is at a mounting matching part of the upper gas inlet nozzle and the lower gas inlet nozzle; and the top of the lower axial channel points to a bottom wall surface of the upper gas inlet nozzle.
An ion source baffle includes a baffle body, wherein the baffle body is of a hollow structure; baffles are symmetrically fixedly arranged on an inner wall of the baffle body; the baffles extend towards the center of the baffle body; and in the direction from the inner wall of the baffle body towards the center of the baffle body, a shielding area formed by the baffles is reduced. The ion etching machine includes a discharge chamber, a reaction chamber and an ion source baffle, wherein the ion source baffle is clamped on an inner wall of the discharge chamber; and plasma sequentially passes through the ion source baffle and an ion source grid assembly. In the ion etching machine, the ion source baffle is additionally provided, such that after plasma is shielded by the ion source baffle.
An anti-breakdown ion source discharge apparatus includes a discharge chamber, a coil support, an upper insulation fixing block, a discharge component and an ion source chamber. The discharge component includes a radio-frequency coil, a lower conductive connector and an upper conductive connector. The radio-frequency coil is fixed on a coil support base; the coil support base is clamped on an inner wall of the bottom of the ion source base; the coil support is along the circumference of the coil support base; the radio-frequency coil passes through the coil support; the upper conductive connector passes by the radio-frequency coil and the coil support base from the outside of the radio-frequency coil and extends into the bottom of the discharge chamber; and the upper insulation fixing block is sleeved over the upper conductive connector and is fixed on the inner wall of the bottom of the ion source chamber.
Provided are a faraday cleaning device and a plasma processing system, the device comprising a reaction chamber, a bias electrode, a wafer, a chamber cover, a coupling window, an air inlet nozzle, a vertical coil, and a faraday layer, wherein the coupling window is installed at the upper end face of the chamber cover, the chamber cover is installed at the upper end face of the reaction chamber, the bias electrode is assembled inside the reaction chamber, the wafer is installed at the upper end face of the bias electrode, the air inlet nozzle is assembled inside the coupling window, the faraday layer is installed at the upper end face of the coupling window, and the vertical coil is assembled at the upper end face of the faraday layer.
Disclosed is a plasma processing system with a faraday shielding device. The plasma processing system comprises a reaction chamber, and a faraday shielding device and an air inlet nozzle which are located on the reaction chamber. The air inlet nozzle penetrates through the faraday shielding device to introduce process gas into the reaction chamber. The air inlet nozzle is made of a conductive material, and the air inlet nozzle is electrically connected to the faraday shielding device. According to the plasma processing system, the air inlet nozzle made of the conductive material is electrically connected to the faraday shielding device, when the cleaning process is carried out, reaction gas of the cleaning process in the projection area of the air inlet nozzle is also electrically isolated, the reaction gas of the cleaning process forms a capacitive coupling plasma in the whole region below a dielectric window.
Disclosed is a plasma etching system, comprising a reaction chamber, a base located in the reaction chamber and used for bearing a workpiece, and a dielectric window located on the reaction chamber. Flat plate type electrodes and coil electrodes are provided on the outer surface of the dielectric window; the flat plate type electrodes are located right over the base, and the coil electrodes are arranged in the peripheral regions of the flat plate type electrodes in a surrounding manner; a Faraday shielding layer is further provided between the coil electrodes and the outer surface of the dielectric window.
The present invention provides a rotatable faraday cleaning apparatus and a plasma processing system, said apparatus comprising a cavity cover, a motor, an eccentric wheel, a long-petalled assembly, a coupling window, a gas intake nozzle, a connecting rod, a short-petalled assembly, a first sector-shaped conductor, and a second sector-shaped conductor; the cavity cover is assembled on a reactor cavity main body, the coupling window is mounted on the cavity cover, the gas intake nozzle is provided on the coupling window, the first sector-shaped conductor is assembled on the gas intake nozzle, the second sector-shaped conductor is assembled on the gas intake nozzle, the long-petalled assembly is assembled on the gas intake nozzle, the short-petalled assembly is assembled on the gas intake nozzle, the connecting rod is assembled on the long-petalled assembly, the eccentric wheel is assembled on the connecting rod, and the motor is mounted on the eccentric wheel.
The present invention provides a device for blocking plasma backflow in a process chamber to protect an air inlet structure, comprising an air inlet nozzle tightly connected to an air inlet flange. The inner cavity of the air inlet nozzle is provided with an air inlet guide body, wherein the air inlet guide body has an upper structure, a middle structure, and a lower structure, the upper, middle, and lower structures are an integrated structure, the upper, middle, and lower structures are all cylindrical, the cross-sectional diameter of the upper structure is smaller than that of the middle structure, a gas gathering area is arranged between the middle structure and the lower structure, and the middle structure and the lower structure are connected by the gas gathering area.
Disclosed in the present application is an inductively coupled plasma treatment system. Said system switches the connection between a radio frequency coil and a faraday shielding device by means of a switch switching radio frequency power. When a radio frequency power supply is connected to the radio frequency coil by means of a matched network, the radio frequency power is coupled into the radio frequency coil to perform plasma treatment process. When a radio frequency power supply is connected to a faraday shielding device by means of a matched network, the radio frequency power is coupled into the faraday shielding device to perform cleaning process on a dielectric window and an inner wall of a plasma treatment cavity.
Disclosed is a ceramic air inlet radio frequency connection type cleaning device, comprising an etching system, a cleaning system, a power supply control device and a radio frequency cleaning mechanism, wherein the power supply control device is connected to the etching system and the cleaning system and is used for power supply switching; the etching system is connected to two single three-dimensional coil bodies of a three-dimensional coil by means of two lines of a power distribution box so as to etch a wafer in a chamber; and the cleaning system enables the lower surface of a top ceramic air inlet nozzle connected to the radio frequency cleaning mechanism to generate high negative pressure by connecting a radio frequency to the radio frequency cleaning mechanism, such that plasmas directly bombard the lower surface of the top ceramic air inlet nozzle.
An etching uniformity regulating device and method. The device comprises an inductor and a capacitor connected in parallel. One end of the etching uniformity regulating device is connected to a built-in ring located at the edge of an electrostatic chuck of an etching machine, and the other end is grounded. The purpose of controlling the edge electric field is achieved by regulating a capacitance of the capacitor, so as to regulate the etching rate of the edge, thereby achieving etching uniformity.
An etching device and method of inductively coupled plasma. The etching device of inductively coupled plasma includes an etching chamber, an excitation radio-frequency power supply, and a first bias radio-frequency power supply, and further includes a second bias radio-frequency power supply. The frequency of the second bias radio-frequency power supply is significantly lower than that of the first bias radio-frequency power supply. The etching rate and angle are controllable by means of the process of controlling distribution of ion energy by adjusting the radio-frequency bias of different frequencies, so as to adjust etching. In addition, since the mean free path of ions is larger, and the power utilization rate of etching is higher at the low pressure and low bias radio-frequency frequencies, rapid etching is achieved at relatively low power to implement green and energy-saving processing. The disclosure is applicable to the etching of magnetic tunnel junctions.
A method for etching magnetic tunnel junction of single isolation layer, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion etching chamber, an ion beam etching chamber, a coating chamber, and a vacuum transmission chamber, is applicable for the reactive ion etching chamber, ion beam etching chamber and coating chamber to process and treat a wafer according to specific steps without interrupting a vacuum. It can effectively alleviate the influence of masking effect in the production process of high-density small devices. Furthermore, the combined use of the ion beam etching chamber and the reactive ion etching chamber greatly reduces metal contaminations and damage on the film structure of the magnetic tunnel junction, greatly improves the performance and reliability of the devices, overcomes the technical problems existing in a single etching process in the art, and improves production efficiency and etching process accuracy
H01L 43/02 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details
H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
Disclosed is a method for manufacturing a magnetic tunnel junction, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a coating chamber and a vacuum transmission chamber, wherein a magnetic tunnel junction is etched, cleaned and coated for protection without interrupting a vacuum by using the reactive ion plasma etching chamber, the ion beam etching chamber, and the coating chamber in combination. The invention can effectively reduce damages and contaminations of devices, avoid the influence caused by over-etching, and improve performance of devices; at the same time, it can accurately control the steepness of an etching pattern and obtain a pattern result that meets performance requirements.
Disclosed is method for etching a magnetic tunnel junction. An etching apparatus used comprises a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a film coating chamber and a vacuum transport chamber. The method comprises multiple performances of the steps of reactive ion and plasma etching, ion beam etching and film coating. Multiple performances of entry into and exit from the chambers are required during the process, and the delivery between the chambers is performed under vacuum.
A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion plasma etching chamber (10), an ion beam etching chamber (11), a film coating chamber (12), and a vacuum transport chamber (13). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (102); then, ion beam etching is performed to etch into a fixed layer (101) and stopped near a bottom electrode metal layer (100), leaving only a small amount of the fixed layer (101); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (100); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.
A reaction chamber lining including an annular side wall and a flange arranged on an upper portion of the side wall. An end face of the flange extends from the side wall in a radial direction, an outer edge of the flange extends in the radial direction to form fixing flanging parts, and a hole is in each of the fixing flanging parts. The side wall includes a rectangular slot, and a position of the rectangular slot corresponds to a position of a robotic arm access hole in a side wall of a reaction chamber. The side wall includes through holes and honeycomb-shaped apertures. A face joined to the bottom of the side wall includes a disc extending inwards in the radial direction, an extending end of the disc is fitted with an outer edge of an electrode assembly. A plurality of circles of slotted holes are in the disc.
A multilayer magnetic tunnel junction etching method and an MRAM device. A wafer is processed according to particular steps without interrupting vacuum. A reactive ion plasma etching chamber (10) and an ion beam etching chamber (11) are used separately at least one time. The processing of a multilayer magnetic tunnel junction is always in a vacuum environment, thereby avoiding the impact of an external environment on etching. By means of the process of combining etching and cleaning, a device structure maintains good steepness, and the metal contamination and damage of a magnetic tunnel junction film structure are significantly decreased, thereby greatly increasing the performance and reliability of a device. In addition, use of both the ion beam etching chamber (11) and the reactive ion plasma etching chamber (10) solves the technical problem of an existing single etching method, and increases production efficiency and etching process precision.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
There is provided a method for etching magnetic tunnel junction, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a coating chamber, and a vacuum transmission chamber. The method completes the etching of the magnetic tunnel junction in the reactive ion plasma etching chamber, performs ion beam cleaning in the ion beam etching chamber, and performs coating protection in the coating chamber. The transmission among the respective chambers is all in a vacuum state. The invention can overcome the bottleneck in the production of high-density small devices, while greatly improving the yield, reliability and production efficiency of the devices.
An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.
H01J 37/305 - Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A hydrogen fluoride vapor phase corrosion method comprises: introducing a prescribed vaporized organic liquid into a reaction chamber after a vapor phase hydrogen fluoride containing water reacts, in the reaction chamber, with a wafer; the prescribed vaporized organic liquid, and the water remaining on a surface of the wafer form an azeotropic mixture; and evaporating or volatilizing the azeotropic mixture from the surface of the wafer to carry it out.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A wafer cutting device comprises an etching unit, including a wafer holding device and a fluid guide shroud; a gas supply unit; and a chemical reaction liquid supply unit. The wafer holding device includes a carrier disk, which is configured to fix a wafer for cutting and provided with gas apertures, and a gas passage disposed below the carrier disk. The fluid guide shroud is a double-layer structure including an inner layer, an outer layer and a hollow interlayer, located above the wafer holding device and has adjustable spacing with the wafer holding device, and regulates a flow direction of a chemical reaction liquid and protective gases. The gas supply unit supplies a protective gas to the inner layer of the shroud and supplies a protective gas to the carrier disk through the gas apertures. The chemical reaction liquid supply unit supplies the chemical reaction liquid to the interlayer.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
A gas injection device, wherein comprising: a gas channel including an air inlet provided at a upper portion therein and a gas outlet provided at a lower portion therein; and a light channel including an incident light channel and a reflected light channel provided at each side of the gas channel separately, wherein gases arrives at a surface of a sample to be tested via said gas channel and flows out from a slit between said light channel, the gas outlet of gas channel, and the surface of the sample to be tested, and gases flow in a manner of laminar flow with the Peclet number of an air flow being larger than 1. The gas injection device can effectively prevent air from returning back to the measurement system.
Disclosed is a wafer processing apparatus and method. The wafer processing apparatus comprises a chamber, which is a sealed structure having an openable baffle, and is internally provided with an immersion tank having a waste liquid discharge port; a vacuum system for adjusting and maintaining a pressure inside the chamber; a gas supply system comprising an inert gas supply unit and an organic solvent vapor supply unit respectively supplying an inert gas and an organic solvent vapor to the chamber; a temperature control system for adjusting the temperature inside the chamber. According to the present invention, the problems present in existing wafer drying modes can be solved, and in particular, the present invention is well adaptable to a trend of integrated circuit devices developed from a two-dimensional planar structure to a three-dimensional structure in morphology and having more and more increased density.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B08B 3/02 - Cleaning by the force of jets or sprays
B08B 5/00 - Cleaning by methods involving the use of air flow or gas flow
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