The present invention provides an optical device comprising: a first cladding layer formed on a substrate; a multiple quantum well (MQW) active layer formed on the first cladding layer all over a light source area and a modulator area; a second cladding layer formed on the MQW active layer; and a heater, which applies heat to the MQW active layer corresponding to the light source area, and thus controls an energy bandgap of a light source.
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
H01S 5/34 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
2.
EXTERNAL RESONATOR-TYPE LASER HAVING NARROW LINE WIDTH
An external resonator-type laser having a narrow line width according to the present invention includes a gain chip having a laser gain, a lens for collimating light emitted from the gain chip into parallel light, and a wavelength selective filter for transmitting light having a specific wavelength among the light collimated through the lens, wherein opposite side heat transfer members, which are arranged on opposite sides of at least one of the lens and the wavelength selective filter and made of a material having a higher heat transfer rate than the lens and the wavelength selective filter, are included.
The present invention relates to a method of driving an electro-absorption modulator operating in a burst mode. The present invention provides a method of driving an electro-absorption modulator operating in a burst mode, wherein the magnitude of the DC voltage and AC voltage for driving the electro-absorption modulator functionally decreases over time from the point at which laser light is injected into the electro-absorption modulator and the light begins to be absorbed, thereby offsetting the light absorption characteristics due to a temperature change in an area of the electro-absorption modulator.
G02F 1/015 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
4.
METHOD FOR DRIVING ELECTRO-ABSORPTION MODULATOR OPERATING IN BURST MODE
The present invention relates to a method for driving an electro-absorption modulator operating in a burst mode. In the provided method for driving an electro-absorption modulator operating in a burst mode, according to the present invention, the magnitude of DC voltage and AC voltage for driving the electro-absorption modulator is functionally reduced according to the elapse of time from the time at which laser light is injected into the electro-absorption modulator so that light absorption begins, and thus offset light absorption characteristics due to changes in temperature of the electro-absorption modulator area can be offset.
G02F 1/015 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
5.
DWDM OPTICAL ELEMENT HAVING TWO LIGHT SOURCE CHIPS
The present invention relates to a DWDM optical element having two light source chips, wherein two or more semiconductor laser diode chips corresponding to multiple wavelength channels, respectively, are combined into one optical element package, and respective semiconductor lasers are driven simultaneously, thereby doubling the transmission speed obtained when one semiconductor laser is driven.
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G02B 6/42 - Coupling light guides with opto-electronic elements
The present invention provides an optical device comprising: a first cladding layer formed on a substrate; a multiple quantum well (MQW) active layer formed on the first cladding layer all over a light source area and a modulator area; a second cladding layer formed on the MQW active layer; and a heater, which applies heat to the MQW active layer corresponding to the light source area, and thus controls an energy bandgap of a light source.
H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
H01S 5/0625 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
H01S 5/32 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures
7.
OPTICAL DEVICE CAPABLE OF PRECISE ADJUSTMENT OF OPTICAL OUTPUT INTENSITY, AND METHOD FOR MANUFACTURING OPTICAL DEVICE
Disclosed are an optical device capable of precise adjustment of optical output intensity, and a method for manufacturing an optical device. An optical device including a laser diode, according to one aspect of the present embodiment, comprises: a laser diode for outputting light having a predetermined wavelength; an optical output unit in which output light of the laser diode is optically coupled and the output of the optical device takes place; and an optical isolator disposed between the laser diode and the optical output unit. The output light of the laser diode passes through the optical isolator and the output of the optical device takes place through the optical output unit, and the intensity of the output light of the optical device is determined by the rotation of the optical isolator.
The present invention provides an optical transmitter including a semiconductor laser and a control method thereof for preventing crosstalk between channels in an NG-PON2 with a 100 GHz channel spacing by reducing a wavelength drift of the semiconductor laser. The wavelength drift occurs between a few nanoseconds and a few hundreds nanoseconds from the beginning of a burst when the semiconductor laser is operated in a burst-mode.
A wavelength tunable filter, an optical receiver and a method using the wavelength tunable filter are disclosed. According to an aspect of the present invention, an optical receiver module having a wavelength tunable filter is provided. The transmission wavelength or reflective wavelength of the wavelength tunable filter is tunable The optical receiver module includes the wavelength tunable filter, a heat generation unit, and a separation unit. The wavelength tunable filter transmits light of a preset wavelength and tunes the preset wavelength. The heat generation unit is in contact with at least a portion of the wavelength tuning filter. The separation unit has a preset thermal conductivity. The separation unit is in contact with at least another portion of the wavelength tunable filter to support the wavelength tunable filter and separate physically or thermally the wavelength tunable filter from other components of the optical receiver module except for the heat generation unit. The preset wavelength is determined based on a temperature of the heat generation unit.
H04B 10/079 - Arrangements for monitoring or testing transmission systemsArrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
G02B 6/42 - Coupling light guides with opto-electronic elements
The present invention relates to an optical element requiring a plurality of communication wavelengths, more particularly, to an optical element using a plurality of semiconductor laser diode chips to generate a plurality of optical wavelengths, respectively, wherein the optical element allows a single monitor photo diode to monitor an operation state of a plurality of semiconductor laser diodes, so as to reduce the number of parts necessary for manufacturing the optical element, a volume of the optical element, a processing cost of the optical element, and a complexity of the optical element.
The present invention relates to A channel set up method of optical receiver with wavelength tunable filter such as an etalon filter in a TO type received wavelength-tunable optical receiver.
According to the method of setting a channel in a wavelength-tunable optical receiver of the present invention, by circularly receiving communication channels within a predetermined temperature range, in which selectively receiving communication channel using two adjacent transmissive modes in the transmissive modes of a wavelength-tunable filter, it is possible to individually select and receive all communication channels with a predetermined temperature range. Further, it is possible to use all FP type etalon filters regardless of transmissive wavelength characteristics in at a specific temperature of a wavelength-tunable filter, so it is possible to reduce a manufacturing cost and power consumption of a product and increase thermal stability of a package.
In a process of producing a semiconductor laser requiring a very narrow wavelength selection in a TWDM-PON network such as NG-PON2 requiring a burst mode operation, the present invention forms two laser waveguides respectively having different oscillation wavelengths in one laser diode chip so as to improve a wavelength throughput of the chip, and when any one laser waveguide participates in communication, a current flowing in a waveguide laser, which does not participate in the communication, is modulated and introduced, with respect to a wavelength change caused by a change in a current which flows in a burst mode operating waveguide laser participating in the communication, so as to stabilize a wavelength of a laser beam oscillated in the laser waveguide participating in the communication, thereby enabling a DWDM-level burst mode communication.
Disclosed herein is a technology of effectively interrupting light reflected from a wavelength selective filter so as not to be fed back to a laser diode chip in a semiconductor laser package having a function of adjusting a relative intensity ratio of a signal of “1” and a signal of “0” using an optical filter. Since an optical interruption device according to the present invention may effectively interrupt a light feedback to the laser diode chip by adjusting characteristics of a 45 degree partial reflection mirror in an existing TO-can type laser device having the 45 degree partial reflection mirror and additionally disposing one λ/4 waveplate, unlike an optical isolator according to the related art using an existing Faraday rotator, the signals of “1” and “0” may be effectively adjusted in a TO-can type laser device having a small volume, thereby improving a function of communication.
A semiconductor laser device which comprises a laser diode chip (100) that emits laser light; a 45° reflective mirror (400) that changes laser light traveling horizontally to a package bottom into laser light traveling perpendicular to the package bottom. The 45° reflective mirror (400) is a partial reflective mirror which has a partial reflection/partial transmission characteristic. An optical feedback-partial reflective mirror (500) is disposed along a path of light passing vertically through the 45° reflective mirror (400). The optical feedback-partial reflective mirror (500) supplies some of the laser light traveling through the 45° reflective mirror (400) back to the 45° reflective mirror 400 by reflecting a first portion of the laser light while transmitting a remaining portion of the laser light.
H01S 3/08 - Construction or shape of optical resonators or components thereof
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 5/06 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
The present invention relates to a method for using an etalon filter-type wavelength-variable filter to set a received wavelength channel in a TO-type reception wavelength variable optical receiver. The channel setting method of a wavelength-variable optical receiver according to the present invention circularly receives a communication channel within a preset temperature range and can individually select and receive all communication channels within a pre-determined temperature region by selectively receiving a communication channel using two adjacent transmission modes among transmission modes of the wavelength-variable filter, and at the same time, regardless of transmission wavelength property at a specific temperature of the wavelength-variable filter, all FP-type etalon filters can be used to reduce the product manufacturing cost and power consumption and to strengthen the thermal stability of a package.
The present invention relates to an external cavity type laser provided with a wavemeter capable of precisely measuring a wavelength of a laser beam based on a transmission wavelength band of a wavelength selective filter inserted into a cavity regardless of a driving current of a laser diode chip. The external cavity type laser apparatus includes: a laser diode chip 100 emitting a laser beam; a beam feedback partial reflection mirror 500 reflecting a portion of the beam emitted from the laser diode chip 100 to feed the beam back to the laser diode chip 100; a collimating lens 200 installed on a path of a beam between the laser diode chip 100 and the beam feedback partial reflection mirror 500 to collimate the beam emitted from the laser diode chip 100; a 45-degree partial reflection mirror 300 converting a laser beam moving in parallel with a package bottom surface into a laser beam moving perpendicularly to the package bottom surface; a wavelength selective filter 400 transmitting a beam having a selected specific wavelength therethrough; a beam strength monitoring photodiode 600 disposed on a path of a beam moving from the collimating lens 200 to the 45-degree partial reflection mirror 300 and transmitting through the 45-degree partial reflection mirror 300; and a wavelength monitoring photodiode 700 disposed on a path of a beam moving from the wavelength selective filter 400 to the 45-degree partial reflection mirror 300 and transmitting through the 45-degree partial reflection mirror 300. A magnitude of a photocurrent flowing to the wavelength monitoring photodiode 700 is changed depending on a strength of a beam output oscillated in the laser diode chip 100 and a reflectivity at the wavelength selective filter 400, and a photocurrent flowing to the beam strength monitoring photodiode 600 is determined by the strength of the beam output outputted from the laser diode chip 100. Therefore, a value obtained by dividing the photocurrent flowing to the wavelength monitoring photodiode 700 by the photocurrent flowing to the beam strength monitoring photodiode 600 depends on only the reflectivity at the wavelength selective filter 400. Therefore, the value obtained by dividing the photocurrent flowing to the wavelength monitoring photodiode 700 by the photocurrent flowing to the beam strength monitoring photodiode 600 provides information on the wavelength of the laser beam based on the transmission band wavelength of the wavelength selective filter 400, and the wavelength of the laser beam may be figured out by measuring the value, and may be very precisely determined to be a predetermined wavelength.
A light receiving module having a built-in wavelength-tunable wavelength-selective filter that can selectively receive light with a specific wavelength from laser light with various wavelengths emitted from an optical fiber and tune the specific wavelength. In the light receiving module including a light receiving element having a built-in wavelength-tunable wavelength-selective filter that receives laser light from an optical fiber according to the present invention, a flat plate-shaped window (240) transmitting laser light from an optical fiber (600) is formed in the light receiving element (22), a wavelength-tunable wavelength-selective filter for separating wavelengths of laser light traveling as parallel light is disposed in the light receiving element (22), and a lens (400) converting laser light from the optical fiber (600) into parallel light is disposed between the optical fiber (600) and the light receiving element (22).
G02B 6/42 - Coupling light guides with opto-electronic elements
G02B 6/293 - Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
G02B 27/14 - Beam splitting or combining systems operating by reflection only
G02B 6/32 - Optical coupling means having lens focusing means
A TO can-type optical module for ultrahigh-speed communication including a laser diode chip for at least 5 Gbps. A substrate for transmitting a signal to a laser diode chip is formed by coupling an upper substrate (210) on which line patterns for transmission are formed, to a lower substrate (220) of which an upper surface has conductivity with the upper substrate (210) such that the optical module for ultrahigh-speed communication has single ended impedance of 25 ohms or differential ended impedance of 50 ohms. The substrate has a height of about 0.4 mm to which a laser diode chip, for ultrahigh-speed communication, is attached to enable an optical coupling between the laser diode chip, the lens, and the like, and may implement a hight-speed transmission line using a width of 0.6 mm or less thereby providing a substrate which is effectively embedded ina TO can-type package with a narrow mounting area.
H01S 5/062 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
An optical receiver that can tune a selected wavelength using a wavelength tunable filter transmitting a plurality of wavelengths. The optical receiver is a wavelength tunable optical receiver that includes: a wavelength tunable filter (100) transmitting laser light from an optical fiber; and a photodiode (300) receiving laser light passing through the wavelength tunable filter (100), in which the wavelength tunable filter 100 is a Fabry-Perot type etalon filter transmitting a plurality of wavelengths. When a channel with a specific wavelength is moved to a channel with another wavelength, an optical channel is selected based on a peak different from a transmissive peak of an FP etalon filter selecting the previous channel so that temperature of the wavelength tunable filter can be changed. A light-receiving photodiode chip is disposed on a thermoelectric element and a wavelength tunable filter transmits different wavelengths in accordance with temperature of the thermoelectric element.
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour
G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
G02F 1/1345 - Conductors connecting electrodes to cell terminals
G09G 3/36 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source using liquid crystals
The present invention relates to a wavelength-tunable laser, which can tune an oscillating laser wavelength and can be manufactured in a small size, comprising: a laser diode chip (100) for emitting a laser beam; a partial reflection mirror (500) for optical feedback, which partially reflects the beam emitted from the laser diode chip (100) so as to enable the reflected beam to be fed back to the laser diode chip (100); a collimation lens (200) provided on an optical path between the laser diode chip (100) and the partial reflection mirror (500) for optical feedback so as to collimate the beam emitted from the laser diode chip (100); a wavelength-tunable selective filter (300) for converting the wavelength transmitted according to the temperature; a phase compensator (350) of which a refractive index is changed according to the temperature and which offsets a change in the refractive index according to the temperature of the semiconductor laser diode chip (100) or the wavelength-tunable selective filter (300); and a 45 degree reflection mirror (400) for switching the direction of the laser beam from the laser beam traveling in the horizontal direction with respect to a bottom surface of a package, to the laser beam traveling in the vertical direction with respect to the bottom surface of the package, wherein the laser diode chip (100), the wavelength-tunable selective filter (300), and the phase compensator (350) are disposed at an upper part of a thermoelectric element (900) so as to change the wavelength oscillating according to a change in the temperature of the thermoelectric element (900).
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
The present invention relates to a compact tunable laser device that can change the oscillation laser wavelength. The laser device includes: a laser diode chip 100 that emits laser light; an optical feedback-partial reflective mirror 500 that feeds some of light emitted from the laser diode chip 100 back to the laser diode chip 100 by reflecting it; a collimating lens 300 that is disposed in a light path between the laser diode chip 100 and the optical feedback-partial reflective mirror 500 and collimates light emitted from the laser diode chip 100; a tunable-selective filter 300 of which the transmissive wavelength changes in accordance with temperature; and a 45°-reflective mirror 400 that changes laser light traveling horizontally to a package bottom into laser light traveling perpendicular to the package bottom, wherein the laser diode chip 100 or the tunable-selective filter 300 is disposed on a thermoelectric element 900 and has an oscillation wavelength changing in accordance with a change in temperature of the thermoelectric element 900.
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 5/06 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
A TO type laser device that can perform long-distance transmission due to a reduced line breadth of laser light. A semiconductor laser device which comprises a laser diode chip (100) that emits laser light; a wavelength-selective filter; a collimating lens (200) disposed in a light path between the laser diode chip (100) and the wavelength-selective filter and to collimate light emitted from the laser diode chip (100); a 45°-partial reflective mirror (300) disposed in a light path between the laser diode chip (100) and the wavelength-selective filter for changing laser light traveling parallel to the bottom of a package into laser light traveling perpendicularly to the bottom of the package; and an optical wavelength supervisory photodiode (500) disposed in a light path along which laser light reflecting from the wavelength-selective filter, after being emitted from the laser diode chip (100), passes through the 45°-partial reflective mirror (300).
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
The present invention relates to a dense wavelength division multiplexing (DWDM) system configured using a cyclic arrayed waveguide grating (AWG) in which a wavelength is periodically separated. A DWDB system according to the present invention corresponds to a DWDM system which utilizes the cyclic AWG and a DFB_LD laser diode chip on at least one side of an OLT or ONU, wherein two or more cyclic AWG bands are assigned to an OLT or ONU optical module to which a wavelength tunable DFB-LD is applied, at least one cyclic AWG band is assigned to an optical module to which a fixed wavelength type laser not a wavelength tunable laser is applied, and a band for the OLT and a band for the ONU are separated by one or more cyclic AWG bands, so that the frequency can be changed by changing the temperature of an FB-LD. Therefore, the present invention enables reduction of the price of an optical module and enables bidirectional communication through one optical fiber.
The present invention relates to an optical module package structure for bidirectional communication in which an optical transmitting device and optical receiving device for optical communication are built into one package housing and which simultaneously performs the transmission and reception of optical signals. In particular, the present invention relates to an optical module package structure for bidirectional communication using narrow wavelength spacing, which is capable of separating two uplink and downlink optical signals having a wavelength spacing of several nm. The optical module package structure for bidirectional communication according to the present invention, in an optical device package for emitting light including a laser diode chip such as a TO (transistor outline)-type or mini-flat-type chip, has a predetermined radiation angle in the laser diode chip and a laser mounted thereon for converting the radiated laser light to parallel rays of light, and has the characteristic of having the optical device package for emitting light being sealed by a flat panel window.
The present invention relates to a light receiving module having a built-in tunable wavelength-selective filter that receives light by selecting a specific wavelength from among laser light of various wavelengths being emitted from an optical fibre, and can tune the wavelength being selected. The light receiving module having a built-in tunable wavelength-selective filter according to the present invention comprises a light receiving element having a built-in wavelength-tunable wavelength-selective filter and receives laser light emitted from an optical fibre, wherein the light receiving element (22) has a flat window (240) through which the laser light emitted from the optical fiber (600) passes, and also has, in the inside thereof, a wavelength-tunable selective filter (230) for performing wavelength division on the laser light entering as parallel light, and a lens (400) for converting the laser light emitted from the optical fiber (600) to parallel light is provided between the optical fiber (600) and the light receiving element (22).
The present invention relates to an external-cavity type laser provided with a wavemeter for accurately measuring the wavelength of a laser beam on the basis of the transmission wavelength band of a wavelength-selective filter inserted into a resonator irrespective of the driving current of a laser diode chip. An external-cavity type laser device according to the present invention comprises: a laser diode chip (100) for emitting laser beams; an optical feedback partial reflection mirror (500) partially reflecting the beams emitted from the laser diode chip (100) to feed the same back to the laser diode chip (100); a collimation lens (200) provided on an optical path between the laser diode chip (100) and the optical feedback partial reflection mirror (500) to collimate the beams emitted from the laser diode chip (100); a 45-degree partial reflection mirror (300) for converting the direction of laser beams moving in parallel with a package bottom surface to laser beams moving perpendicularly with respect to a package bottom surface; a wavelength-selective filter (400) for transmitting the beams of a selected certain wavelength; a light intensity monitoring photo diode (600) arranged on the optical path, moving from the collimation lens (200) to the 45-degree partial reflection mirror (300) to pass through the 45 degrees partial reflection mirror (300); a wavelength monitoring photo diode (700) arranged on the optical path moving from the wavelength-selective filter (400) to the 45-degree partial reflection mirror (300) to through the 45 degrees partial reflection mirror (300). The photoelectric current flowing through the wavelength monitoring photo diode (700) changes in magnitude according to the intensity of the optical power oscillating in the laser diode chip (100) and the reflectivity at the wavelength-selective filter (400), and the photoelectric current flowing through the light intensity monitoring photo diode (600) is determined by the intensity of the optical power outputted from the laser diode chip (100). Therefore, the value obtained by dividing the photoelectric current flowing through the wavelength monitoring photo diode (700) by the photoelectric current flowing through the light intensity monitoring photo diode (600) only depends on the reflectivity at the wavelength-selective filter (400). Therefore, the value obtained by dividing the photoelectric current flowing through the wavelength monitoring photo diode (700) by the photoelectric current flowing through the light intensity monitoring photo diode (600) provides information on the wavelength of the laser beams on the basis of the transmission band wavelength of the wavelength-selective filter (400), and the wavelength of the laser beams can be recognized by measuring the same and can be determined as a very accurately preset wavelength.
H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
The present invention relates to a TO can-type optical module for ultrahigh-speed communication comprising a laser diode chip for ultrahigh-speed communication of 5Gbps or higher. An optical module for ultrahigh-speed communication according to the present invention comprises: a laser diode chip; a high-speed signal transmission substrate for transmitting signals; an upper high-speed signal transmission substrate (210) having a high-speed signal transmission line pattern formed thereon; and a lower high-speed signal transmission substrate (220) having a conductive upper surface, the substrates being coupled to the laser diode chip. The optical module has single-ended impedance of 25ohm or differential-ended impedance of 50ohm, thereby enabling high-speed transmission; the substrate, to which a laser diode chip for high-speed communication is attached, has a height of about 0.4mm, thereby facilitating optical coupling between the laser diode chip and a lens, etc.; and a high-speed transmission line is implemented using a substrate width of 0.6mm or less, thereby providing a high-speed signal transmission substrate that is effectively embedded in a TO can-type package having a narrow mounting area.
H04B 10/00 - Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
28.
Wavelength-tunable laser apparatus having wavelength measuring function
The present invention relates to a wavelength-tunable laser apparatus which can measure a wavelength in a wavelength-tunable laser diode package structure for dense wavelength division multiplexing (DWDM) having a transistor outline (TO) type appearance. The wavelength-tunable laser apparatus of the present invention is a TO-can type wavelength-tunable laser apparatus comprising: a laser diode chip for emitting a laser beam; a collimator lens for collimating the laser beam; a wavelength-selective filter through which the selected wavelength passes; and a reflecting mirror having an inclined reflective surface, wherein the laser beam is split into a beam which is emitted from the laser diode chip (100), collimated by the collimator lens (200) and emitted through a 45-degree reflective mirror (300) to the outside of a TO-can type package, and a beam which passes through the 45-degree reflective mirror (300), the beam passing through the 45-degree reflective mirror (300) is split into at least two branched beams, a first photodiode (510) is arranged on the path of one branched beam so as to monitor the beam, and wavelength-selective filters (400, 600) having variable transmittance according to the wavelengths and a second photodiode (520) are further arranged on the path of the other branched beam.
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 5/0687 - Stabilising the frequency of the laser
The present invention relates to an optical receiver which can vary a selected wavelength by using a wavelength tunable filter having a plurality of wavelength transmission characteristics. The optical receiver according to the present invention corresponds to a wavelength tunable optical receiver comprising: a wavelength tunable filter (100) which is penetrated by laser light emitted from an optical fiber; and a photodiode (300) for receiving the laser light penetrating the wavelength tunable filter (100), wherein the wavelength tunable filter (100) includes a Fabry-Perot type etalon filter having a plurality of transmission wavelengths and allows a transmission peak and another peak of an FP etalon filter, which selects all channels, to select an optical channel when a movement is made from a channel of a particular wavelength to a channel of another wavelength, thereby reducing temperature change of the wavelength tunable filter. Further, since a thermoelectric element is disposed on a stem base, a light receiving photodiode chip is disposed on the thermoelectric element, and a wavelength tunable filter, which varies a penetrated wavelength depending on temperature of the thermoelectric element, is disposed on the light receiving photodiode chip, the optical receiver according to the present invention can adopt a method for varying a wavelength selected by the thermoelectric element, so as to acquire a wavelength tunable characteristic and improve a signal transmission quality.
The present invention relates to a TO-type optical element package for high-speed communication which is used for an optical module for high-speed communication of at least 10 gigabits per sec (Gbps) and enables thermoelectric elements to be embedded in an upper part of a stem. The TO-type optical element package for high-speed communication, according to the present invention, can transmit high-quality signals in a high-speed operation of the optical element by inserting and fixing an electrode pin (120) in a through-hole formed on a stem base (100), surrounding a lateral surface of the electrode pin (120) protruding to an upper part of the stem base (100), with a metallic instrument (400) having a through-hole so as to enable the impedance of an electrode pin (120) part surrounded with the stem base (100) to correspond to the impedance of an electrode pin (120) part protruding to the upper part of the stem base (100).
The present invention relates to a TO-type laser device capable of long-distance transmission having reduced laser light line width. The laser device according to the present invention comprises: a laser diode chip (100) for emitting laser light; a wavelength-selective filter; a collimating lens (200) provided on an optical path between the laser diode chip (100) and the wavelength-selective filter to collimate the light emitted from the laser diode chip (100); a 45° partial reflective mirror (300) provided on the optical path between the laser diode chip (100) and the wavelength-selective filter to redirect laser light traveling horizontally with respect to a package bottom surface to laser light traveling vertically with respect to the package bottom surface; and an optical wavelength-monitoring photodiode (500) arranged on to an optical path on which a laser light reflected from the wavelength-selective filter after being emitted from the laser diode chip (100) penetrates the 45° partial reflective mirror (300). In addition, the temperature of a thermoelectric device having a laser diode chip attached thereto is adjusted or the temperature of an etalon filter is adjusted to maintain a constant relationship between the wavelength of laser light and the wavelength of the etalon filter, and a "0" signal of the laser light is reduced to more than a "1" signal of the laser light to reduce the line width of a laser signal, thereby allowing longer-distance transmission of a high-speed modulation optical signal. In the present invention, a laser device using a low-price TO-type package is provided wherein parts are arranged around the 45° partial reflective mirror to obtain a laser signal which can be modulated at a high speed and can be communicated at a long distance by using a low-price TO-type package, and laser light modulated at a high speed can be transmitted up to a long distance when the laser light wavelength is maintained at a constant value; when the laser light wavelength is changed to a desired wavelength; and when the laser light wavelength is not adjusted.
H01S 5/06 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
H01S 5/026 - Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
32.
Radio frequency optical module and optical transmission apparatus including the same
Electronics and Telecommunications Research Institute (Republic of Korea)
Phovel.co.LTD (Republic of Korea)
Inventor
Han, Young-Tak
Shin, Jang Uk
Park, Sang Ho
Baek, Yongsoon
Kim, Jeong Soo
Abstract
Provided is a transistor outline (TO)-CAN type optical module and an optical transmission apparatus including the same. The optical module includes a stem, a thermo-electric cooler (TEC) on the stem, a first sub-mount on the TEC, an optical element on the first sub-mount, a plurality of electrode lead wirings inserted from an outside to an inside of the stem and disposed adjacent to the TEC and the optical element, a second sub-mount between the electrode lead wirings and the optical element, radio frequency (RF) transmission lines on the second sub-mount, a plurality of bonding wires connecting the RF transmission lines and the optical element, and the RF transmission lines and the electrode lead wirings, and an impedance matching unit disposed around the RF transmission lines and the electrode lead wirings, and controlling impedances of the RF transmission lines and the electrode lead wires.
The present invention relates to a wavelength-tunable laser, which can tune an oscillating laser wavelength and can be manufactured in a small size, comprising: a laser diode chip (100) for emitting a laser beam; a partial reflection mirror (500) for optical feedback, which partially reflects the beam emitted from the laser diode chip (100) so as to enable the reflected beam to be fed back to the laser diode chip (100); a collimation lens (200) provided on an optical path between the laser diode chip (100) and the partial reflection mirror (500) for optical feedback so as to collimate the beam emitted from the laser diode chip (100); a wavelength-tunable selective filter (300) for converting the wavelength transmitted according to the temperature; a phase compensator (350) of which a refractive index is changed according to the temperature and which offsets a change in the refractive index according to the temperature of the semiconductor laser diode chip (100) or the wavelength-tunable selective filter (300); and a 45 degree reflection mirror (400) for switching the direction of the laser beam from the laser beam traveling in the horizontal direction with respect to a bottom surface of a package, to the laser beam traveling in the vertical direction with respect to the bottom surface of the package, wherein the laser diode chip (100), the wavelength-tunable selective filter (300), and the phase compensator (350) are disposed at an upper part of a thermoelectric element (900) so as to change the wavelength oscillating according to a change in the temperature of the thermoelectric element (900).
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 5/06 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
34.
VARIABLE WAVELENGTH LASER APPARATUS MADE TO BE SMALL
The present invention relates to a variable wavelength laser apparatus for varying the wavelength of a laser beam, which can be made to be small, and the apparatus includes: a laser diode chip (100) for generating a laser beam; an optical feedback partial reflection mirror (500) for reflecting a part of the laser beam generated from the laser diode chip (100) to feed back the reflected part to the laser diode chip (100); a collimation lens (200) installed in the optical path between the laser diode chip (100) and the optical feedback partial reflection mirror (500) so as to collimate the laser beam generated from the laser diode chip (100); a variable wavelength selection filter (300) for varying the wavelength of the transmitted laser beam according to the temperature; and a 45-degree reflection mirror (400) for changing the direction of the laser beam propagating in parallel with the bottom surface of a package to the direction vertical to the bottom surface, wherein the laser diode chip (100) or the variable wavelength selection filter (300) is arranged on a thermoelectric element (900) so as to vary the wavelength of the laser beam generated according to the temperature of the thermoelectric element (900).
H01S 5/18 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 3/0941 - Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a semiconductor laser, e.g. of a laser diode
35.
Method for measuring temperature using a thermistor
There is provided a method for measuring a temperature using a thermistor with which it is possible to precisely measure a temperature above a thermoelectric device by using a thermistor disposed on the thermoelectric device in a module for controlling a temperature of a component arranged on the thermoelectric device by using the thermoelectric device. In the method for measuring a temperature using a thermistor, by electrically connecting the thermistor to an electrode pin through a thermoelectric device or a bridge sub-mount mounted on the thermoelectric device when electrically connecting a top surface of the thermistor and the electrode pin, it is possible to suppress direct heat exchange between the thermistor and the electrode pin. Further, it is possible to effectively suppress heat exchange between the thermistor and a package lid by internal gas of a package by covering the thermistor with a polymer material, such as an epoxy having low thermal transmittance. As a result, it is possible to allow the thermistor to precisely measure the temperature of the thermoelectric device.
G01K 7/00 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat
G01K 7/22 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements the element being a non-linear resistance, e.g. thermistor
G01K 1/14 - SupportsFastening devicesArrangements for mounting thermometers in particular locations
G01K 1/16 - Special arrangements for conducting heat from the object to the sensitive element
36.
EXTERNAL OSCILLATOR-TYPE LASER APPARATUS CAPABLE OF BEING MANUFACTURED SO AS TO BE ULTRA-SMALL
The present invention relates to an external oscillator-type laser apparatus capable of producing laser light having a uniform wavelength regardless of changes in temperature in the external environment, and of being manufactured so as to be ultra-small. The laser apparatus according to the present invention is a laser apparatus having a uniform oscillation wavelength regardless of external conditions, and comprising: a laser diode chip (100) for emitting laser light; a partially-reflecting light feedback mirror (500) for reflecting a portion of the light emitted by the laser diode chip (100) and feeding the light back to the laser diode chip (100); a collimating lens (200) installed in the light path between the laser diode chip (100) and the partially-reflecting light feedback mirror (500), for collimating the light emitted by the laser diode chip (100); a selective wavelength filter (300) for transmitting a certain selected wavelength of light; and a 45 degree reflecting mirror (400) for changing the direction of laser light travelling parallel to the bottom surface of a package such that it travels perpendicular to the bottom surface of the package, wherein a small laser apparatus can be manufactured by minimizing the length of the horizontal axis and the effective optical length of a laser oscillator formed between the laser diode chip and the partially-reflecting light feedback mirror.
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 3/13 - Stabilisation of laser output parameters, e.g. frequency or amplitude
37.
WAVELENGTH-TUNABLE LASER APPARATUS HAVING WAVELENGTH MEASURING FUNCTION
The present invention relates to a wavelength-tunable laser apparatus which can measure a wavelength in a wavelength-tunable laser diode package structure for dense wavelength division multiplexing (DWDM) having a transistor outline (TO) type appearance. The wavelength-tunable laser apparatus of the present invention is a TO-can type wavelength-tunable laser apparatus comprising: a laser diode chip for emitting a laser beam; a collimator lens for collimating the laser beam; a wavelength-selective filter through which the selected wavelength passes; and a reflecting mirror having an inclined reflective surface, wherein the laser beam is split into a beam which is emitted from the laser diode chip (100), collimated by the collimator lens (200) and emitted through a 45 degree reflective mirror (300) to the outside of a TO-can type package, and a beam which passes through the 45 degree reflective mirror (300), the beam passing through the 45 degree reflective mirror (300) is split into at least two branched beams, a first photodiode (510) is arranged on the path of one branched beam so as to monitor the beam, and wavelength-selective filters (400, 600) having variable transmittance according to the wavelengths and a second photodiode (520) are further arranged on the path of the other branched beam.
The present invention relates to a method for measuring temperature using a thermistor, which can precisely measure the temperature above a thermoelectric device using a thermistor disposed on the thermoelectric device in a module for controlling the temperature of a component arranged on the thermoelectric device using the thermoelectric device. The method for measuring temperature using a thermistor according to the present invention involves electrically connecting the thermistor to an electrode pin via a thermoelectric device or a bridge submount attached to the thermoelectric device when electrically connecting the upper surface of the thermistor and the electrode pin, to thereby suppress the direct heat exchange between the thermistor and the electrode pin. Further, the method involves covering the thermistor with a polymer material, such as an epoxy having low thermal transmittance, to thereby effectively suppress the heat exchange between the thermistor and a package lid caused resulting from the gases in the package, thus enabling the thermistor to precisely measure the temperature of the thermoelectric device.
G01K 7/22 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using resistive elements the element being a non-linear resistance, e.g. thermistor
The present invention relates to a wavelength-convertible semiconductor laser which is driven by a pulse, and more specifically, to a wavelength-convertible semiconductor laser, wherein: an expanded resonator is formed by including a laser diode chip on the outside of a pump semiconductor laser diode chip; and an oscillating wavelength of a pump laser is driven by a pulse determined from the outside of the semiconductor laser diode chip by inserting a filter, which is capable of selecting a wavelength, on the inside of said expanded resonator.
H01S 3/10 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 3/102 - Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
A semiconductor laser using an external resonator. A laser diode chip emits a laser beam in a horizontal direction parallel to the bottom plane of a package, and the travel path of the laser beam is changed into a vertical direction by a reflective mirror next to a laser beam-emitting surface of the laser diode chip. As a result, the beam arrangement of the external cavity is available on a plane parallel to the bottom plane of the package through a lens installed on the vertical travel path of the laser beam. Consequently, the beam is easily arranged. Furthermore, an additional reflective mirror is installed above the lens which changes the vertical travel path into a horizontal travel path, which allows the beam traveling parallel to the bottom plane to be easily arranged through the lens. The production of the package can also be enabled in the configuration where various optical tools are arranged on the bottom of the package. Therefore, the semiconductor laser using an external cavity and having various characteristics can be easily manufactured.
Orbiviruses, more specifically bluetongue virus (BTV) in an animal susceptible to BTV infection. The composition may include a pharmaceutically or veterinarily acceptable vehicle or excipient, and a vector. The vector may contain heterologous nucleic acid molecule(s), expresses in vivo in the animal BTV antigen, immunogen or epitope thereof, e.g., BTV VP2; BTV VP2 and VP5; BTV VP2 and VP5 and VP3 and/or VP7. The composition can contain an adjuvant, such as carbomer. Methods for making and using such a composition, including prime-boost regimes and including as to differential diagnosis, are also contemplated.
C12N 7/01 - Viruses, e.g. bacteriophages, modified by introduction of foreign genetic material
C12Q 1/70 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions involving virus or bacteriophage
G01N 33/569 - ImmunoassayBiospecific binding assayMaterials therefor for microorganisms, e.g. protozoa, bacteria, viruses
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