A novel hybrid band-pass filter is realized using semiconductor integrated hybrid technology, and includes two acoustic resonance units, and one IPD filter unit. The filter unit may be implemented as a high-pass filter, a low-pass filter, or a band-pass filter. The two acoustic resonance units and the IPD filter unit are arranged on a matching substrate, for example, by way of flip-chip technology and welding of electrodes, and a polymer filled shell is formed external to and surrounding the acoustic resonance units and the IPD filter unit to prevent oxidation and to maintain integrity of the weld points. The first acoustic resonance unit is connected with an input terminal of the IPD filter through a matching inductor, an output terminal of the IPD filter is connected with the second acoustic resonance unit through a matching inductor, and finally, the two acoustic resonance units and the IPD filter unit are integrated on the matching substrate. The band-pass filter is characterized by low loss, high suppression, wide passband and high rectangular coefficient, and also has the advantages of small size, high yield, good batch consistency and suitability for batch production.
An acoustic resonator forms a component of an FBAR filter that includes a trap-rich layer to avoid parasitic conduction by degrading carrier lifetimes of a free charge carriers. The acoustic resonator has a first electrode, a second electrode disposed parallel to the first planar portion and a piezoelectric layer disposed between and contacting both the first and second planar electrodes. A silicon-based a support layer is bonded to the second electrode and includes a trap region. The acoustic resonator may be manufactured by (a) depositing the trap region on the support layer; (b) oxidizing a surface of the trap region; (c) depositing a bonding layer on the oxidized surface of the trap region; (d) bonding a first electrode to the bonding layer; (e) contacting a first side of a piezoelectric layer to the electrode; and (f) contacting a second side of the piezoelectric layer a second electrode.
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 9/13 - Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
An acoustic resonator that has a first electrode with a first planar portion. A second electrode having a second planar portion is disposed parallel to the first planar portion. This second electrode has a bifurcated end that defines a gap. A piezoelectric layer is disposed between and contacts both the first planar portion and the second planar portion. Also contacting the piezoelectric layer is the bifurcated end of the second electrode. The gap is formed in the periphery of each resonator within a filter. It is formed in the top electrode, that is typically formed of molybdenum, but could be formed from other metals as well. Unlike a gap between a top electrode and piezoelectric material, the gap recited herein is entirely within the second electrode. This structure is compatible with an inner passivation layer that enables a single crystal piezoelectric layer and a larger bottom electrode.
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
A package for an electronic component, the package comprising a front end, a back end, and an active membrane layer sandwiched between front and back electrodes of conducting material; wherein front electrode has a surface that extends beyond an adjacent surface of the active membrane layer, the active membrane mechanically supported by the front end and covered by a back end comprising at least one back cavity having organic walls and lid of organic material, with filled through vias traversing the organic walls and lid for coupling to the electrodes by an internal routing layer; the vias being coupleable by external solderable bumps to a circuit board for coupling the package in a flip chip configuration.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - Details of semiconductor or other solid state devices
A package for an electronic component wherein the package comprises a front end, a back end, and an active membrane layer sandwiched between front and back electrodes of conducting material; the active membrane being mechanically supported by the front end and covered by a back end comprising at least one back cavity having organic walls and lid, with filled through vias traversing the organic lid and walls for coupling to the electrodes by an internal routing layer; the vias being coupleable by external solderable bumps to a circuit board for coupling the package in a ‘flip chip’ configuration.
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H01L 23/00 - Details of semiconductor or other solid state devices
A packaged electronic component comprising: an electronic component housed within a package comprising a front part of a package comprising an inner section with a front cavity therein opposite the electronic component defined by the raised frame and an outer section sealing said cavity; and a back part of the package comprising a back cavity in an inner back section, and an outer back section sealing the cavity, said back package further comprising a first and a second via through the back end around said at least one back cavity for coupling to front and back electrodes of the electronic component; the vias terminating in external contact pads adapted to couple the package in a flip chip configuration to a circuit board.
A method for fabricating an array of front ends for an array of packaged electronic components that each comprise:
an electrical element packaged within a package comprising
a front part of a package comprising an inner section with a cavity therein opposite the resonator defined by the raised frame and an outer section sealing said cavity; and
viii. Applying an outer front end section to the inner front end section and bonding the outer front end section to an outer surface of the inner front end section such that the outer front end section spans across and seals the at least one cavity of the array of front cavities.
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H01L 41/313 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by laminating or bonding of piezo-electric or electrostrictive bodies by metal fusing or with adhesives
H01L 41/319 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
H01L 41/332 - Shaping or machining of piezo-electric or electrostrictive bodies by etching, e.g. lithography
H01L 41/337 - Shaping or machining of piezo-electric or electrostrictive bodies by machining by polishing or grinding
H01L 41/338 - Shaping or machining of piezo-electric or electrostrictive bodies by machining by cutting or dicing
A method of fabricating packaged electronic components with improved yield and at lower unit cost; the method comprising the steps of obtaining an active membrane layer on a carrier substrate, depositing a front electrode onto a front of the active membrane layer, obtaining an inner front section including at least a silicon handle or wafer, attaching an inner front end section to an outer surface of the front electrode, detaching the carrier substrate from a back surface of an active membrane on the opposite surface from the front surface on which the front electrode is deposited, patterning the active membrane layer into an array of at least one island of membrane, selectively removing the front electrode and bonding layer, selectively applying an inner passivation layer, and selectively depositing a back electrode layer on the thus exposed back surface of the active membrane.
A method of fabricating an FBAR filter device including an array of resonators, each resonator comprising a single crystal piezoelectric film sandwiched between a first metal electrode and a second metal electrode, wherein the first electrode is supported by a support membrane over an air cavity, the air cavity embedded in a silicon dioxide layer over a silicon handle, with through-silicon via holes through the silicon handle and into the air cavity, the side walls of said air cavity in the silicon dioxide layer being defined by perimeter trenches that are resistant to a silicon oxide etchant.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
An FBAR filter device comprising an array of resonators, each resonator comprising a single crystal piezoelectric layer sandwiched between a first and a second metal electrode,
wherein the first electrode is supported by a support membrane over an air cavity, the air cavity being embedded in a silicon dioxide layer over a silicon handle, with through-silicon via holes through the silicon handle and into the air cavity, the side walls of said air cavity in the silicon dioxide layer being defined by barriers of a material that is resistant to silicon oxide etchants, and wherein the interface between the support membrane and the first electrode is smooth and flat.
H01L 41/18 - Selection of materials for piezo-electric or electrostrictive elements
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
11.
RF resonator membranes and methods of construction
3 (BST) has been fabricated for the first time using molecular beam epitaxy. The membrane typically has a thickness of 200 nm to 500 nm and the thickness may be controlled to within 1%. It may be fabricated on a sapphire wafer carrier from which it may subsequently be detached. The smoothness of the membrane has an RMS of less than 1 nm. This membrane is very promising for the next generation of RF filters.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
the individual piezoelectric films and the upper electrodes being separated by a passivation material; the lower electrode being coupled to an interposer with a first cavity between the lower electrodes and the interposer; the filter package further comprising a silicon wafer of known thickness attached over the upper electrodes with an array of upper cavities between the silicon wafer and a silicon cover; each upper cavity aligned with a piezoelectric film in the array of piezoelectric films, the upper cavities having side walls comprising the passivation material.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
2; the individual piezoelectric films, their upper electrodes and silicon membranes thereover being separated from adjacent piezoelectric films, upper electrodes and silicon membranes by a passivation material.
H01L 41/18 - Selection of materials for piezo-electric or electrostrictive elements
H01L 41/08 - Piezo-electric or electrostrictive elements
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
H01L 23/00 - Details of semiconductor or other solid state devices
15.
RF resonator electrode and membrane combinations and method of fabrication
A piezoelectric resonator membrane having a thickness in the range of 200 nm to 500 nm wherein the thickness may be controlled to within 1%; the membrane being sandwiched between electrodes to create a resonator, wherein at least one of the electrodes comprises aluminum thereby minimizing damping due to the weight of the electrode.
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H01S 3/00 - Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
H03B 17/00 - Generation of oscillations using a radiation source and a detector
18.
Single crystal piezoelectric RF resonators and filters
2; the individual piezoelectric films, their upper electrodes and silicon membranes thereover being separated from adjacent piezoelectric films, upper electrodes and silicon membranes by a passivation material.
H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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