Abstract

This semiconductor device according to one embodiment comprises a semiconductor layer, a first electrode, a second electrode, and a gate electrode. The semiconductor layer includes a first region, a second region, a third region located between the first region and the second region in a first direction from the first region toward the second region, and a fourth region located between the second region and the third region. The semiconductor layer contains gallium nitride. The hydrogen concentration in the fourth region is higher than the hydrogen concentration in the third region. The first electrode is provided on the first region. The second electrode is provided on the second region. The gate electrode is provided on the third region with a first insulating layer therebetween.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate

Abstract

According to the embodiments, a rectification plate that is to be provided opposite a plurality of first nozzles that spray a process gas that includes a starting material gas and a plurality of second nozzles that spray a purge gas and is to rectify the flow of a fluid that includes the process gas and the purge gas includes a plurality of through holes that transmit the process gas and an elliptical purge gas channel that transmits the purge gas and extends to at least one of the plurality of second nozzles in correspondence with the spraying direction of the purge gas.

IPC Classes  ?

• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Abstract

Provided are an electronic circuit and a computing device which are capable of achieving improved characteristics. According to an embodiment, this electronic circuit includes a first structure. The first structure includes a first Josephson junction including a first end and a first other end, a second Josephson junction including a second end and a second other end, a third Josephson junction including a third end and a third other end, a first conductive part coupled to the first other end and the third end, a second conductive part coupled to the second and third other ends, and a third conductive part coupled to the first and second ends. One half of the sum of second and third frequencies is smaller than a first frequency. The second frequency corresponds to a first excited state of the first structure when a magnetic flux passing through a space surrounded by a loop including the first to third Josephson junctions and the first to third conductive parts is zero. The third frequency corresponds to a second excited state of the first structure when the magnetic flux is zero. The first frequency corresponds to the second excited state when the magnetic flux is 0.5 times a magnetic flux quantum.

IPC Classes  ?

• H10N 60/10 - Junction-based devices

Abstract

A cage rotor according to an embodiment comprises: a rotor core (10); a plurality of slot bars; and an end ring. The rotor core (10) has a rotor shaft, a plurality of first electromagnetic steel sheets (11) having a rotor shaft through-hole and a plurality of first slot holes formed in the circumferential direction, and a plurality of second electromagnetic steel sheets (21) having a rotor shaft through-hole and a plurality of second slot holes formed in the circumferential direction in a manner respectively overlapping the first slot holes. The second electromagnetic steel sheets (21), as compared to the first electromagnetic steel sheets (11), further have projection parts (21v, 21w) formed in portions of second electromagnetic steel sheet slot edges, which are boundaries with respect to the second slot holes, in a manner projecting to the inside of the second slot holes or recessed parts.

IPC Classes  ?

• H02K 17/16 - Asynchronous induction motors having rotors with internally short-circuited windings, e.g. cage rotors
• H02K 1/26 - Rotor cores with slots for windings

Abstract

The present invention calculates an accurate solution in a short time by extracting a partial problem structure from a network optimization problem. A problem solving device according to one embodiment solves a network optimization problem. The problem solving device comprises a processing unit that repeatedly executes first processing, second processing, and third processing. In the first processing, the processing unit classifies each of a plurality of determination variables included in the network optimization problem as a high-impact determination variable or a low-impact determination variable. In the second processing, the processing unit replaces each low-impact determination variable with an estimated value and performs sampling and statistical processing on each high-impact determination variable. In the third processing, the processing unit replaces a determination variable having a strong statistical bias with a value based on the statistical bias on the basis of the results from the sampling and statistical processing.

IPC Classes  ?

• G06N 99/00 - Subject matter not provided for in other groups of this subclass

Abstract

Provided is a ceramic circuit board with improved long-term reliability. A ceramic circuit board according to an embodiment comprises a ceramic substrate and a metal part bonded to the ceramic substrate. An AC voltage of 50 Hz or 60 Hz is applied between a front surface and a back surface of the ceramic circuit board at a ramp-up rate of 200 V/s, an arc discharge voltage A (kV) is measured when arc discharge is detected, and when an insulation breakdown voltage B (kV) between the front surface and the back surface is measured in accordance with IEC 672-2, the ratio A/B is 0.10 or more. The ratio A/B is preferably in the range of 0.10-0.50. The metal part is bonded to the ceramic substrate via a bonding layer, and preferably the total area ratio of voids in an arbitrary cross section of the bonding layer is in the range of 0-1%. The metal part is a metal plate having a thickness of 0.2 mm or more, and preferably an upper end portion of at least a part of a side surface of the metal plate has a radiused shape.

IPC Classes  ?

• H01L 23/15 - Ceramic or glass substrates
• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H05K 1/03 - Use of materials for the substrate

Abstract

Provided is a power conversion device disposed at an end of a high-voltage DC power transmission system connected to a renewable energy power source, the power conversion device making it possible to configure a multi-pole high-voltage DC power transmission system by connecting a plurality of power conversion devices in parallel to the same renewable energy power source. The power conversion device includes a power converter and a control device. The power converter converts AC power supplied by the renewable energy power source to DC power and outputs the converted DC power to a DC power transmission line. The control device controls the AC voltage outputted by the power converter to the renewable-energy-power-source side. The control device has a voltage control unit and a current control unit. The voltage control unit generates a voltage command value for controlling the amplitude and the phase of the AC voltage on the basis of at least the power value of active power flowing in from the renewable energy power source. The current control unit corrects the voltage command value via current feedback for reducing at least a DC current component of a lateral-flow current flowing between the current control unit and the power converter of another pole on the renewable-energy-power-source side.

IPC Classes  ?

• H02M 7/48 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Abstract

A power conversion device according to an embodiment has a power converter and a control device. The power converter converts AC power supplied by a renewable energy power generation system connected to an AC system on a power transmission side into DC power, and outputs the DC power to a DC power transmission line. The control device controls the operation of the power converter. The control device has an overcurrent suppression control unit, a during-fault command value calculation unit, and a command value output unit. If an overcurrent flowing in the power converter in response to a fault that had occurred in the AC system is detected, the overcurrent suppression control unit switches an operation control scheme of the power converter from a normal operation voltage control scheme to an overcurrent suppression control scheme before the fault is cleared by a cutoff device disposed on the AC power transmission line of the AC system, and causes the power converter to be activated when the fault is cleared. The during-fault command value calculation unit generates a during-fault command value corresponding to the overcurrent suppression control. The command value output unit selects either a normal-time command value of the voltage control or the during-fault command value to output the selected command value to the power converter.

IPC Classes  ?

• H02M 7/48 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Abstract

According to an embodiment, a particle beam radiation system (1) is provided with: a first distribution electromagnet (91), which is provided at a connection between a vacuum duct (8) and an expansion duct (93) and deflects a heavy particle beam (B) within a range of a first angle (θ1) with a reference trajectory (K) when the trajectory of the heavy particle beam (B) is not deflected as a reference line; and at least one second distribution electromagnet (92), which is provided downstream of the first distribution electromagnet (91) and further deflects the heavy particle beam (B) deflected by the first distribution electromagnet (91) within a range of a second angle (θ2).

IPC Classes  ?

• A61N 5/10 - X-ray therapyGamma-ray therapyParticle-irradiation therapy

Abstract

According to an embodiment, a multipole magnet adjustment system (1) comprises: an X-axis drive motor (15) for moving a multipole magnet (2), which controls a charged particle beam (B), in an X-axis direction orthogonal to a travel direction of the charged particle beam (B); a Y-axis drive motor (14) for moving the multipole magnet (2) in a Y-axis direction orthogonal to the travel direction and the X-axis direction; and a computer (3) that controls the X-axis drive motor (15) and the Y-axis drive motor (14), causes a schematic diagram (51) to be displayed on a screen (50), the schematic diagram (51) showing the positional relationship between a vacuum duct (5) through which the charged particle beam (B) passes and the multipole magnet (2) surrounding the vacuum duct (5), and causes the position of the multipole magnet (2) being displayed on the screen (50) to be moved in accordance with the movement of the multipole magnet (2) by the driving of the X-axis drive motor (15) and the Y-axis drive motor (14).

IPC Classes  ?

• H05H 7/04 - Magnet systemsEnergisation thereof

Abstract

[Problem] To realize communication between communication devices belonging to networks having different address systems from each other, while maximally reducing a load on a user. [Solution] An information processing device according to the present embodiment includes: an address reception unit that receives an address of a second communication device from a gateway device capable of communicating with the second communication device in a second network of a second address system; a first communication unit that receives a message of a first communication protocol from a first communication device in a first network of a first address system; a corresponding data generation unit that generates corresponding data by associating the address of the second communication device with a first address allocated to the first communication unit; and a communication protocol processing unit that, when a destination address of the message of the first communication protocol matches the first address, uses the corresponding data as a basis to generate a message of a second communication protocol that requests transferring the message of the first communication protocol to the second communication device.

IPC Classes  ?

• H04L 61/2514 - Translation of Internet protocol [IP] addresses between local and global IP addresses
• H04L 61/2521 - Translation architectures other than single NAT servers

Abstract

According to an embodiment, a limit detection system (1) comprises: a light-projecting unit (27) that projects a laser (L); a light-receiving unit (28), which is secured to the same one type of member to which the light-projecting unit (27) is secured, and which receives the laser (L); at least one light-blocking member (26) which is secured to a different type of member than the one type of member, is disposed on a through-path of the laser (L) from the light-projecting unit (27) to the light-receiving unit (28), and has formed therein an aperture (31) through which the laser (L) is to pass; and a computer (3) that acquires the received light intensity of the laser (L) received by the light-receiving unit (28) and detects the positional displacement between a first member (11) and a second member (2) on the basis of the difference between the received light intensity when the laser (L) having passed through the aperture (31) hits the light-receiving unit (28) and the received light intensity when the laser (L) at least partially blocked by the light-blocking member (26) hits the light-receiving unit (28).

IPC Classes  ?

• H01H 35/00 - Switches operated by change of a physical condition
• G01V 8/16 - Detecting, e.g. by using light barriers using one transmitter and one receiver using optical fibres

Abstract

Provided is a development support device capable of obtaining the total number of steps for predicting a load and the time required when a program is executed. A development support device of an embodiment is for supporting development of a program including a function block. The development support device of the embodiment comprises: a step counter that counts the number of execution steps of the function block indicating the number of processes to be executed in the function block; a number counter that counts the number of times of use of the function block used in the program; and an arithmetic operation unit that calculates the product of the number of times of use of the function block and the number of execution steps of the function block, and outputs the number of execution steps of the function block in the program.

IPC Classes  ?

• G06F 8/77 - Software metrics

Abstract

In a communication device according to an embodiment, a signal reception unit receives an OFDM signal and converts said signal into a baseband OFDM signal. A temporal waveform calculation unit extracts a portion of a time-axis waveform signal and calculates the degree of similarity to a known signal. An FFT unit carries out a Fourier transform on the temporal waveform signal that is the output of the temporal waveform calculation unit. A frequency waveform phase correction unit corrects, on the basis of the degree of similarity to a known signal, the phase of the frequency-axis waveform signal that is the output of the FFT unit. A frequency waveform calculation unit extracts a portion of the frequency-axis waveform signal that is the output of the frequency waveform phase correction unit and calculates the degree of similarity between the extracted signal and a known signal. A switching timing estimation unit estimates, on the basis of the results from the frequency waveform calculation unit, the timing for switching between uplink communication and downlink communication in a host device.

IPC Classes  ?

• H04L 27/26 - Systems using multi-frequency codes
• H04B 7/022 - Site diversityMacro-diversity

Abstract

An IC module according to an embodiment comprises: a substrate having a first main surface and a second main surface; an IC chip mounted on the first main surface; and five contact terminals provided on the second main surface in a surrounding region around a region facing the IC chip. The five contact terminals include only contact terminals C1, C2, C3, C5, and C7 defined by ISO/IEC international standards. Each of the five contact terminals has, within the surrounding region, a surface area that includes the minimum contact surface defined by ISO/IEC international standards.

IPC Classes  ?

• G06K 19/077 - Constructional details, e.g. mounting of circuits in the carrier

Abstract

Provided is a heavy particle beam irradiation device that has an improved degree of freedom in designing electromagnets, and excellent efficiency.　A heavy particle beam irradiation device (10) comprises: an emission port (31) that emits heavy particle beams (18) in a direction of a prescribed emission angle φ from a fixed point on a reference line (16) at which an isocenter (15) intersects; electromagnets (45a, 45b) that form magnetic field regions (11a, 11b) in which magnetic fields (25a, 25b) are in opposite directions across the reference line (16); and an electric current supply unit that supplies excitation electric current to the electromagnets (45a, 45b) such that the strengths of the magnetic fields (25) are different according to the emission angle φ, and causes the heavy particle beams (18) to converge at the isocenter (15).

IPC Classes  ?

• A61N 5/10 - X-ray therapyGamma-ray therapyParticle-irradiation therapy
• G21K 5/04 - Irradiation devices with beam-forming means
• H05H 7/04 - Magnet systemsEnergisation thereof

Abstract

The present invention provides a heavy particle beam irradiation device that can adjust the irradiation angle to a target over a wide range while also being intended to reduce the area of a uniform magnetic field formation region.　A heavy particle beam irradiation device (10) comprises: a first emission port (31) that emits a heavy particle beam (18) with a positive irradiation angle (17a) relative to a reference line 16 at a first deflection angle (21); a first magnetic field region (11) where magnetic fields (25, 26) in opposite directions across a straight line connecting the first output port (31) and the isocenter (15) are generated to give the heavy particle beam (18) a circular arc trajectory to converge on the isocenter (15); a second emission port (32) that emits a heavy particle beam (18) with a negative irradiation angle relative to the reference line (16) at a second deflection angle; and a second magnetic field region (12) where magnetic fields (27, 28) in opposite directions across a straight line connecting the second output port (31) and the isocenter (15) are generated to give the heavy particle beam (18) emitted at the second deflection angle (22) a circular arc trajectory to converge on the isocenter (15).

IPC Classes  ?

• A61N 5/10 - X-ray therapyGamma-ray therapyParticle-irradiation therapy
• G21K 5/04 - Irradiation devices with beam-forming means
• H05H 7/04 - Magnet systemsEnergisation thereof
• H05H 7/06 - Two-beam arrangementsMulti-beam arrangements

Abstract

According to an embodiment, a method for filling a heat treatment container with a plurality of ceramic molded bodies having a curved surface part includes a placing step, a moving step, and a filling step. In the placing step, a plurality of ceramic molded bodies are placed on a filling device. In the moving step, the filling device on which the plurality of ceramic molded bodies are placed is moved over the heat treatment container until the bottom surface of the filling device reaches a height of 100 mm or less with reference to the bottom surface of the heat treatment container. In the filling step, the heat treatment container is filled with the plurality of ceramic molded bodies from the filling device.

IPC Classes  ?

• B28B 11/00 - Apparatus or processes for treating or working the shaped articles
• C04B 35/64 - Burning or sintering processes
• C04B 35/587 - Fine ceramics
• F16C 33/32 - Balls

Abstract

Raman imaging of a measurement area on a certain cross-section of the silicon nitride sintered body according to an embodiment of the present invention yields a mapping where (1) among a region of silicon nitride crystal particles oriented in a direction nearly aligned with a direction perpendicular to the certain cross-section in the measurement area and a region of silicon nitride crystal particles oriented in a direction nearly aligned with a direction parallel to the certain cross-section, the region of silicon nitride crystal particles having a smaller area ratio is defined as a first region, and (2) the region of silicon nitride crystal particles having a larger area ratio is defined as a second region; (3) a region of the grain boundary phase of a rare earth element-aluminum-oxygen system in the measurement area is defined as a third region; (4) a region of a substance including at least one of titanium, hafnium, tungsten, molybdenum, and silicon carbide in the measurement area is defined as a fourth region; and the area ratios of the first region, the second region, the third region, and the fourth region are 0.5%-8%, 70%-92%, 2%-16%, and 0.5%-8%, respectively.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• F16C 33/32 - Balls
• G01N 21/65 - Raman scattering

Abstract

This production method according to an embodiment produces a ceramic degreased body by heating and degreasing a ceramic molded body in a continuous furnace. The continuous furnace includes: a heating unit that heats the ceramic molded body; a maintaining unit that maintains the temperature of the ceramic molded body; and a cooling unit that cools the ceramic molded body. The oxygen concentration in at least part of the heating unit is lower than the oxygen concentration in at least part of the maintaining unit. An exothermic reaction caused by a change in oxygen concentration is caused in the ceramic molded body while the ceramic molded body passes through at least said part of the maintaining part.

IPC Classes  ?

• C04B 35/638 - Removal thereof

Abstract

Provided are a stator in which a space factor can be secured and an increase in iron loss can be suppressed, and a method for manufacturing the stator. According to an embodiment, the stator comprises a stator core 10 and a stator winding wound around the stator core 10. The stator core 10 is provided with: divided blocks 13 each comprising block electromagnetic steel sheets which are laminated in the axial direction and in which first outer peripheral side recess parts are formed, each divided block 13 having an outer peripheral surface in which a plurality of block groove parts that extend in the axial direction are formed by the first outer peripheral side recess parts; cut-off plates 12 which are provided adjacent to the divided blocks 13, have an outer periphery having the same diameter as the outer peripheral surface of the divided blocks 13, and are formed with outer peripheral side recess parts 12g at positions corresponding to the block groove parts 13g; and adhesion parts 15 formed in the block groove parts 13g and the outer peripheral side groove parts 12g.

IPC Classes  ?

• H02K 1/18 - Means for mounting or fastening magnetic stationary parts on to, or to, the stator structures
• H02K 15/02 - Processes or apparatus specially adapted for manufacturing, assembling, maintaining or repairing of dynamo-electric machines of stator or rotor bodies

Abstract

Provided is a particle measuring device that can be realized at a low cost and that can measure particles with easy operation. According to an embodiment, this particle measurement device comprises: a light source that supplies illumination light for illuminating particles in a liquid; an imaging unit that images the illumination light that has passed through the particles; and a measurement unit that measures the distance between the particles and the imaging unit on the basis of the transmitted light intensity of the illumination light captured by the imaging unit and the known particle size and refractive index of the particles.

IPC Classes  ?

• G01N 15/0227 - Investigating particle size or size distribution by optical means using imagingInvestigating particle size or size distribution by optical means using holography
• G01B 11/00 - Measuring arrangements characterised by the use of optical techniques
• G06T 7/00 - Image analysis
• G06T 7/50 - Depth or shape recovery

Abstract

Provided is an X-ray thickness gauge in which measurement error caused by contamination of an X-ray transmission window can be suppressed. The X-ray thickness gauge according to an embodiment comprises: an X-ray generation unit capable of generating X-rays; a housing for housing the X-ray generation unit; an X-ray transmission window disposed on a wall surface of the housing and capable of transmitting X-rays; an X-ray detection unit disposed facing the outer surface of the X-ray transmission window and capable of detecting the dose of X-rays radiated through the X-ray transmission window; an air purge device capable of spraying a gas along the outer surface of the X-ray transmission window; a liquid purge device capable of spraying a liquid toward the outer surface of the X-ray transmission window; and a control unit for controlling at least one of the spraying of the liquid toward the outer surface of the X-ray transmission window by the liquid purge device or the spraying of the gas along the outer surface of the X-ray transmission window by the air purge device on the basis of the dose of the X-rays detected by the X-ray detection unit before and after the measurement of the thickness of a measurement target.

IPC Classes  ?

• G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness

Abstract

In a silicon nitride sintered body having a plurality of silicon nitride crystal particles and a grain boundary phase according to an embodiment of the present invention, the plurality of silicon nitride crystal particles include specific silicon nitride crystal particles in each of which a first solid solution metal that is composed of at least one of tungsten and molybdenum and a second solid solution metal that is composed of aluminum form a solid solution with each other. With respect to the amount of the solid solution in the specific silicon nitride crystal particles among the silicon nitride crystal particles, it is preferable that (the number of atoms of the first solid solution metal)/(the number of atoms of silicon), which is the number of atoms of the first solid solution metal to the number of atoms of silicon, is 0.0001 to 0.01 inclusive, and (the number of atoms of the second solid solution metal)/(the number of atoms of silicon), which is the number of atoms of the second solid solution metal to the number of atoms of silicon, is 0.001 to 0.1 inclusive.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• F16C 33/32 - Balls

Abstract

A control circuit for a rotary rectifier according to an embodiment of the present invention detects the instantaneous voltage of a field coil, computes the frequency from the instantaneous voltage, and causes a current to be supplied from the rotary rectifier to the field coil within a prescribed phase range that includes a zero-crossing point where the instantaneous voltage changes from positive to negative. Thus, the control circuit is highly versatile with a simple configuration, and can carry out phase-optimized excitation control in a reliable manner.

IPC Classes  ?

• H02P 6/16 - Circuit arrangements for detecting position

Abstract

A stator core (10-1 or 10-2) of a rotary electric machine according to an embodiment is provided with: an annular core back part (10c); and a plurality of teeth parts (13) extending in the radial direction of the core back part (10c). A flow path (17) opened so that a refrigerant flows is provided inside the core back part (10c) and inside the plurality of teeth parts (13). The flow path (17) has a flow path portion through which the refrigerant flows at least inside the plurality of teeth parts (13) in the radial direction of the stator core and also in the axial direction.

IPC Classes  ?

• H02K 1/20 - Stationary parts of the magnetic circuit with channels or ducts for flow of cooling medium

Abstract

[Problem] To provide a rights management system for learning data used for machine learning models such as generative AIs. [Solution] A rights management system according to an embodiment allocates a learning data ID to learning data used for generating a generative AI model for generating new content or new data, and receives registration of rights information of learning data to which the learning data ID is allocated. Registration of the generative AI model that is generated using usage-permitted learning data is received from a model developer, and model registration information, associated with the learning data ID of the learning data that is used, is generated. Usage permission applications for the generative AI model that is registered are received from business operators, usage fees corresponding to the rights information of the learning data associated with the generative AI model, regarding which usage has been permitted, are calculated for the business operators who obtain business revenue through content or data generated by the registered generative AI model, and the usage fees deposited from the business operators are totaled and a dividend is calculated for each learning data provider.

IPC Classes  ?

• G06Q 20/38 - Payment protocolsDetails thereof
• G06Q 50/18 - Legal services

Abstract

A stator (100) according to an embodiment of the present invention comprises: a stator core (110) in which a plurality of stator slots are formed; a plurality of coil segments (130) each having a straight section (131) formed from enamel-coated flat wire and accommodated respectively in two different stator slots (111) and a connecting section (132) connecting the two straight sections (131) on the outer side of a first axial end (110a) of the stator core (110); and a stator winding (120) provided with, for respective phases, a plurality of linking sections (125) that connect the plurality of coil segments (130) in series on the outer side of a second axial end (110b) of the stator core (110). An insulating section (131j) is formed on the outer surface of the enamel coating on the surface of a portion of the straight sections (131) in the plurality of coil segments (130), said portion excluding accommodated portions (131h) to be accommodated in the stator slots (111).

IPC Classes  ?

• H02K 3/34 - Windings characterised by the shape, form or construction of the insulation between conductors or between conductor and core, e.g. slot insulation
• H02K 3/38 - Windings characterised by the shape, form or construction of the insulation around winding heads, equalising connectors, or connections thereto

Abstract

Provided are a permanent-magnet rotor and a permanent-magnet electric motor in which it is possible to reduce the coercive force of a permanent magnet without reducing torque. According to an embodiment, a rotor 100 comprises: a rotor shaft 110; first magnets 131 that are disposed in line symmetry with respect to a d-axis; second magnets 133 that are disposed radially inward of the first magnets 131; and a rotor core that is attached to the radially outer side of the rotor shaft 110, the rotor core including a region where a permanent magnet is stored, a non-magnetic region, and a bridge, being formed in a shape substantially protruding toward a rotation center axis, being configured such that a plurality of electrodes having flux barrier bands of which the outer peripheral surfaces are linked are disposed so as to be equally divided in a circumferential direction, and having a non-magnetic region in which the outer peripheral surfaces and the permanent magnet are linked. The thickness of the second magnets is greater than the thickness of the first magnets, and the angle formed by the second magnets is greater than the angle formed by the first magnets.

IPC Classes  ?

• H02K 1/276 - Magnets embedded in the magnetic core, e.g. interior permanent magnets [IPM]

Abstract

Provided is a breaker device having sufficient withstand voltage performance even when a vacuum circuit breaker is used. In a breaker device of one embodiment, a first breaking contact is connected in parallel with an energization contact, and a second breaking contact is connected in parallel with the energization contact and also connected in series to the first breaking contact. The first breaking contact is configured by a vacuum circuit breaker, and the second breaking contact and the energization contact are configured by a gas circuit breaker. When executing an electric path activation operation for putting an electric path into an energized state from a breaking state, a breaking contact activation operation, a second breaking contact activation operation, and an energization contact activation operation are executed. The completion time point of the first breaking contact activation operation is before the completion time point of the second breaking contact activation operation, and the completion time point of the second breaking contact activation operation is before the completion time point of the energization contact activation operation.

IPC Classes  ?

• H01H 33/42 - Driving mechanisms
• H01H 33/66 - Vacuum switches
• H01H 33/915 - Switches with separate means for directing, obtaining, or increasing flow of arc-extinguishing fluid the flow of arc-extinguishing fluid being produced or increased by movement of pistons or other pressure-producing parts this movement being effected by, or in conjunction with, the contact-operating mechanism the arc-extinguishing fluid being air or gas with closed circuit of air or gas
• H02B 13/035 - Gas-insulated switchgear

Abstract

The present invention prevents a decrease in identification performance even when a usage environment is changed. An information processing device in accordance with an embodiment of the present invention comprises one or more input devices, an extraction unit, an identification unit, an environment information acquisition unit, an analysis unit, and a re-registration unit. The one or more input devices acquire input information. The extraction unit uses a person feature model to extract, from the input information, a feature amount that indicates a feature of a person. The identification unit identifies the person by comparing the feature amount and a feature amount that is indicated in a person dictionary. The environment information acquisition unit acquires environment information from the input information. The analysis unit analyzes a change in the environment information and the accuracy of identification of the person by the identification unit. The re-registration unit performs control for re-registering the person dictionary when there is a change in the environment information or when the accuracy of identification is less than an accuracy threshold value.

IPC Classes  ?

• G10L 17/04 - Training, enrolment or model building

Abstract

This method for inspecting a fluorescent flaw in a ceramic sintered body includes a step for applying a phosphor to a surface of a ceramic sintered body, a step for barrel-cleaning the ceramic sintered body to which the phosphor has been attached, and a step for performing fluorescent flaw inspection on the ceramic sintered body after the barrel-cleaning.

IPC Classes  ?

• G01N 21/91 - Investigating the presence of flaws, defects or contamination using penetration of dyes, e.g. fluorescent ink

Abstract

A ceramic sealing component according to an embodiment is obtained by bonding a ceramic component and a nickel-plated metal component to each other by means of a bonding layer containing silver, copper, an active metal, and a low-melting-point metal. A compound of nickel and the active metal is formed in the bonding layer. The distance between the compound and the surface of the bonding layer is 10 μm or greater. A method for manufacturing a ceramic sealing component according to an embodiment comprises: a step for obtaining an active metal paste printed component by printing and drying, on a ceramic component, an active metal paste containing at least copper, an active metal, and a low-melting-point metal; a step for obtaining a brazing material paste printed component by printing and drying a brazing material paste containing at least silver and copper onto the surface of the active metal paste printed component; and a bonding step for installing a metal component on the brazing material paste printed component and subjecting the result to heat treatment.

IPC Classes  ?

• B23K 1/19 - Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
• B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
• B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
• B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
• B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles

Abstract

btbt1212bt12b11.

IPC Classes  ?

• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H05K 1/02 - Printed circuits Details

Abstract

The ceramic setter according to an embodiment holds the ceramic molded body in place during the execution of degreasing and/or sintering on a ball-shaped ceramic molded body. This ceramic setter has, in a first bottom surface that is one bottom surface of two bottom surfaces of a cylinder or prism, a first bottom surface groove that has a shape in which a surface parallel to the bottom surface decreases along the depth. A material of the ceramic setter is preferably a material in common with the material for ceramic balls. The material for ceramic balls, which is obtained after the ceramic molded body has been sintered using the ceramic setter, preferably comprises any one of a silicon nitride sintered body, an aluminum oxide sintered body, and a zirconium oxide sintered body.

IPC Classes  ?

• C04B 35/64 - Burning or sintering processes
• C04B 35/111 - Fine ceramics
• C04B 35/486 - Fine ceramics
• C04B 35/587 - Fine ceramics
• F16C 33/32 - Balls

Abstract

Provided is a solar cell structure that can be easily installed even at a location with few flat portions such as a corrugated roof where installation is difficult. Also provided is a solar cell installation method. The solar cell structure comprises: a power generation element; a sealing material that seals a light-receiving surface side and a back surface side of the power generation element; a film-type solar cell module that has a front sheet and a back sheet that sandwich the sealing material from the light-receiving surface side and the back surface side; and a transparent frame that is configured from a transparent plate-shaped body having a larger outer shape than the solar cell module, and to which the light-receiving surface side of the solar cell module is fixed.

IPC Classes  ?

• E04D 13/18 - Roof covering aspects of energy collecting devices, e.g. including solar panels
• H02S 20/23 - Supporting structures directly fixed to an immovable object specially adapted for buildings specially adapted for roof structures

Abstract

A silicon nitride sintered body according to an embodiment of the present invention comprises silicon nitride crystal particles. Observation by SEM of an area of 256 μm × 172 μm in an arbitrary first cross-section of the silicon nitride sintered body reveals that the ratio of a second number of silicon nitride crystal particles having an aspect ratio of 2 or less and a short diameter of 1.8 μm to 2.2 μm to a first number of silicon nitride crystal particles having an aspect ratio of 2 or less is in the range from 5% to 20%.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• H05K 1/03 - Use of materials for the substrate

Abstract

Provided is a gas insulated switchgear (1) that is capable of reducing the influence of a by-product (90) and easily realizing miniaturization.　A pressure accumulation unit (30), an operation mechanism (40), and a gas nozzle (50) are provided, and a by-product (90), which is generated inside a tank (10) by execution of a cut-off operation of shifting to a cut-off state from an inputting state, adheres to the inside of the tank (10). The pressure accumulation unit (30) is configured to execute a pressure accumulation operation of increasing, in a pressure accumulation chamber into which an insulation gas is introduced from the inside of the tank (10), the pressure of the insulation gas. The operation mechanism (40) is configured to operate a contact part (20) and operate the pressure accumulation unit (30). The gas nozzle (50) is configured to execute an injection operation of injecting, from the pressure accumulation chamber to the inside of the tank (10), the insulation gas having increased pressure by the execution of the pressure accumulation operation, to thereby remove the by-product (90) adhering to the inside of the tank (10).

IPC Classes  ?

• H01H 33/915 - Switches with separate means for directing, obtaining, or increasing flow of arc-extinguishing fluid the flow of arc-extinguishing fluid being produced or increased by movement of pistons or other pressure-producing parts this movement being effected by, or in conjunction with, the contact-operating mechanism the arc-extinguishing fluid being air or gas with closed circuit of air or gas

Abstract

A ceramic component according to an embodiment of the present invention is a ceramic component having two bottom surfaces for joining metal components of different materials, wherein, when the arithmetic mean surface height of a first bottom surface of the two bottom surfaces is defined as S1 and the arithmetic mean surface height of the other second bottom surface is defined as S2, S1/S2≥1.2. A method for manufacturing a ceramic sealing component according to an embodiment of the present invention is a method for joining metal components of different materials to two bottom surfaces of a ceramic component, and comprises a step for joining the ceramic component and the metal component via at least one active metal selected from titanium, zirconium, and hafnium.

IPC Classes  ?

• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles

Abstract

A ceramic substrate according to an embodiment of the present invention has compressive stress of different values in a first direction and a second direction parallel to the surface and orthogonal to each other. When the compressive stress in the first direction is defined as compressive stress A and the compressive stress in the second direction is defined as compressive stress B, 4/6 ≤ compressive stress A/compressive stress B ≤ 6/4 is satisfied.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H05K 1/03 - Use of materials for the substrate

Abstract

An alignment device for a ceramic ball material according to an embodiment of the present invention aligns a ceramic ball material in which a spherical surface part and a belt-shaped part are formed. In the alignment device, grooves are formed in an opposing manner along the outer circumferences of respective rollers of a pair of rollers that receive the ceramic ball material. In the alignment device, each roller is rotated in the same direction so that a straight line that connects both poles of the spherical surface part on the pair of rollers is parallel to the rotation axis of each roller.

IPC Classes  ?

• B28B 17/00 - Details of, or accessories for, apparatus for shaping the materialAuxiliary measures taken in connection with such shaping
• B07C 5/342 - Sorting according to other particular properties according to optical properties, e.g. colour
• B28B 11/22 - Apparatus or processes for treating or working the shaped articles for cleaning
• B65G 47/14 - Devices for feeding articles or materials to conveyors for feeding articles from disorderly-arranged article piles or from loose assemblages of articles arranging or orientating the articles by mechanical or pneumatic means during feeding
• C04B 35/587 - Fine ceramics
• G01N 21/88 - Investigating the presence of flaws, defects or contamination

Abstract

The present invention makes it possible to improve energy efficiency when cooling objects by circulating a heating medium cooled using cooling sources.　This cryogenic cooling system comprises: a storage container (12) for storing a cryogenic liquid refrigerant (12A) and a gaseous refrigerant (12B); a liquid-phase heat exchanger (13) that is in contact with the liquid refrigerant in the storage container; a gas-phase heat exchanger (14) that is in contact with the liquid refrigerant in the storage container and is connected to the liquid-phase heat exchanger; and a circulation system (15) for circulating a heating medium (15H), the circulation system (15) including a supply-side pipe (16) for guiding the heating medium from the liquid-phase heat exchanger to a superconducting coil (1) and a return-side pipe (17) for guiding the heating medium from the superconducting coil to the gas-phase heat exchanger. A heat shield (2) at a higher temperature than the superconducting coil is in thermal contact with the return-side pipe of the circulation system. The heating medium sequentially cooled through heat exchange with the refrigerants using the gas-phase heat exchanger and the liquid-phase heat exchanger is supplied to the supply-side pipe to cool the superconducting coil to a cryogenic temperature, and is guided to the return-side pipe to cool the heat shield to a cryogenic temperature.

IPC Classes  ?

• F25D 9/00 - Devices not associated with refrigerating machinery and not covered by groups Combinations of devices covered by two or more of the groups
• F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
• H01F 6/04 - Cooling

Abstract

Provided is an organic matter decomposition system for decomposing organic matter by anaerobic biological treatment without performing aerobic biological treatment. According to an embodiment, this organic matter decomposition system comprises: a hardness removal unit that removes a hardness component from raw water to be treated; a carbonic acid removal unit that removes a carbonic acid component from the raw water from which the hardness component has been removed; an alkali injection unit that injects an alkali into the raw water from which the carbonic acid component has been removed; an insoluble organic matter concentration unit that concentrates insoluble organic matter included in the raw water into which the alkali has been injected; and an anaerobic biological treatment unit that performs anaerobic biological treatment on the raw water in which the insoluble organic matter has been concentrated and decomposes the insoluble organic matter.

IPC Classes  ?

• C02F 3/28 - Anaerobic digestion processes
• B01D 61/02 - Reverse osmosisHyperfiltration
• B01D 61/14 - UltrafiltrationMicrofiltration
• B01D 61/58 - Multistep processes
• C02F 1/20 - Treatment of water, waste water, or sewage by degassing, i.e. liberation of dissolved gases
• C02F 1/42 - Treatment of water, waste water, or sewage by ion-exchange
• C02F 1/44 - Treatment of water, waste water, or sewage by dialysis, osmosis or reverse osmosis

Abstract

According to the embodiments, an analysis method for determining a presence or absence of pancreatic cancer in a test subject, comprising quantifying corrective miRNA and target miRNAs in a sample derived from the test subject, wherein the target miRNAs are three or more selected from a group consisting of hsa-miR-205-5p, hsa-miR-223-5p, hsa-miR-29c-3p, hsa-miR-324-3p, hsa-miR-34a-5p, hsa-miR-483-5p and hsa-miR-885-5p.

IPC Classes  ?

• C12Q 1/6883 - Nucleic acid products used in the analysis of nucleic acids, e.g. primers or probes for diseases caused by alterations of genetic material

Abstract

A microparticle measuring system (10) according to an embodiment comprises: a light source (11) for emitting illuminating light toward an imaging container in which a liquid containing microparticles to be measured has been placed; an objective lens (16) for condensing the illuminating light; an imaging lens (17) for forming an image of the condensed illuminating light; an image sensor (18) for capturing an image of the imaged illumination light and outputting the captured image; an adjustment mechanism for adjusting an imaging distance, which is the distance from the image sensor (18) to the imaging container; and a detecting unit (22) for detecting the microparticles on the basis of a plurality of the captured images having mutually different imaging distances.

IPC Classes  ?

• G01N 15/1434 - Optical arrangements
• C12M 1/34 - Measuring or testing with condition measuring or sensing means, e.g. colony counters
• G01N 15/00 - Investigating characteristics of particlesInvestigating permeability, pore-volume or surface-area of porous materials
• G01N 15/06 - Investigating concentration of particle suspensions
• G02B 21/36 - Microscopes arranged for photographic purposes or projection purposes

Abstract

A rotor according to an embodiment includes: a rotor core extending in an axial direction; permanent magnet housing holes formed in the axial direction along a radially outer peripheral surface of a cross section perpendicular to the axial direction of the rotor core; and permanent magnets housed in the permanent magnet housing holes. Each permanent magnet has: a first surface including a first long side of a pair of long sides appearing in the cross section perpendicular to the axial direction, the first long side being located on the radially outer peripheral side of the cross section perpendicular to the axial direction of the rotor core; a second surface including a second long side of the pair of long sides appearing in the cross section perpendicular to the axial direction, the second long side being located on the radially inner peripheral side of the cross section perpendicular to the axial direction of the rotor core; and a third surface including a short side of a pair of short sides appearing in the cross section perpendicular to the axial direction, said short side being located on the radially outer peripheral side of the rotor core. Each permanent magnet housing hole has a first inner wall surface that faces the first surface of the permanent magnet and an opening that opens to the outside at the radially outer peripheral surface of the rotor core. The first inner wall surface of each permanent magnet housing hole is characterized by being formed at the same position as the first surface of the permanent magnet or at a position further toward the radially outer peripheral side of the rotor core than the first surface.

IPC Classes  ?

• H02K 1/276 - Magnets embedded in the magnetic core, e.g. interior permanent magnets [IPM]

Abstract

An X-ray thickness measurement device according to an embodiment comprises a controller, and a plurality of elements that are electrically connected to the controller and participate in at least one of X-ray generation and X-ray detection. The controller broadcasts a trigger to the plurality of elements, and the plurality of elements, upon having received the trigger, transmit data to the controller on the basis of respective delay times set by clocks respectively provided to each of the plurality of elements.

IPC Classes  ?

• G01B 15/02 - Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness

Abstract

According to an embodiment, a rotor (100) comprises: a rotor shaft (110); a rotor core (120) having a plurality of flux barrier bands (120x, 120y) formed at intervals in the radial direction at respective magnetic poles (101) and in a substantially convex shape toward a rotational central axis; and, in each of the flux barrier bands, a plurality of permanent magnets 130 that include rare earth magnets not containing a heavy rare earth element and/or heavy rare earth magnets containing a heavy rare earth element and are arranged in line symmetry with respect to an M-axis. When viewed with regard to the flux barrier band (120y), in which both rare earth magnets and heavy rare earth magnets are stored, the rare earth magnets are thicker in a direction of magnetization than the thickness of the heavy rare earth magnets in the direction of magnetization, and are also disposed on the side close to the M-axis.

IPC Classes  ?

• H02K 1/276 - Magnets embedded in the magnetic core, e.g. interior permanent magnets [IPM]

Abstract

q1q2d1d2d2. When viewing a given magnetic pole 101, adjacent magnetic poles have inverted shapes about the M axis of the given magnetic pole.

IPC Classes  ?

• H02K 1/276 - Magnets embedded in the magnetic core, e.g. interior permanent magnets [IPM]

Abstract

A communication device according to one embodiment comprises: a signal reception unit that receives an OFDM signal and converts the OFDM signal into a time axis waveform signal of a baseband; a time waveform computation unit that extracts part of a time axis waveform signal that is an output of the signal reception unit, and calculates a correlation value between the extracted signal and a known signal; an FFT unit that executes FFT on a time axis waveform signal that is an output of the signal reception unit; a frequency waveform computation unit that extracts part of a time axis waveform signal that is an output of the FFT unit, and calculates the degree of similarity between the extracted signal and the known signal; a switching timing estimation unit that estimates the switching timing of uplink communication and downlink communication in the own device on the basis of the calculation result of the frequency waveform computation unit; a synchronization signal power calculation unit that extracts part of a frequency axis waveform signal that is an output of the FFT unit and calculates the power of the extracted frequency axis waveform signal; and a power display unit that displays the calculation result of the synchronization signal power calculation unit.

IPC Classes  ?

• H04L 27/26 - Systems using multi-frequency codes
• H04B 7/022 - Site diversityMacro-diversity

Abstract

One embodiment of the present invention provides an electrode comprising an active material–containing layer. The active material-containing layer includes a plurality of active material particles, and a coating that covers at least a part of the surfaces of the plurality of active material particles and contains boron or contains boron and at least one of Si and Al. The ratio of the mass of boron, Si and Al to the mass of the active material particles is in the range of 0.03 mass%-0.50 mass% inclusive.

IPC Classes  ?

• H01M 4/36 - Selection of substances as active materials, active masses, active liquids
• H01M 4/485 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy

Abstract

An embodiment of the present invention can provide a barrier film having excellent gas barrier properties and excellent weather resistance and durability. A barrier film (100) according to an embodiment of the present invention comprises an inorganic barrier layer (101) and a sealing layer (102) disposed so as to be in contact with the surface of the inorganic barrier layer (101). The sealing layer (102) contains a two-dimensional material. The sign of the zeta potential of the surface of the inorganic barrier layer (101) in water with a pH of 6 and the sign of the zeta potential of the surface of the sealing layer (102) in water with a pH of 6 are opposite signs.

IPC Classes  ?

• H10K 30/50 - Photovoltaic [PV] devices
• H01L 31/048 - Encapsulation of modules
• H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
• H10K 30/88 - PassivationContainersEncapsulations

Abstract

This rotor comprises: a rotor core; a plurality of permanent magnets provided in the rotor core and forming a plurality of magnetic poles in the circumferential direction of the rotor core; and groove sections provided in any one region among a pair of regions defined on both sides of the magnetic pole center axis passing through the circumferential center position of each magnetic pole, on the outer circumferential surface of the rotor core and in a smaller number of magnetic poles than the total number of magnetic poles among the magnetic poles of the rotor core.

IPC Classes  ?

• H02K 1/276 - Magnets embedded in the magnetic core, e.g. interior permanent magnets [IPM]

Abstract

Provided is a green sheet having appropriately controlled hardness. The green sheet according to an embodiment of this invention contains ceramic powder. In an embodiment, the green sheet having a size of 10 mm in width × 50 mm in length is cut out, one end of the cut out green sheet in the length direction is fixed with a jig, the cut out green sheet is horizontally supported, and when a sagging value (mm) of the other end in the length direction is measured when 5 seconds have elapsed since the horizontal support is removed, a value obtained by dividing the sagging value by the thickness (mm) of the green sheet falls within the range of 20-120.

IPC Classes  ?

• C04B 35/622 - Forming processesProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products
• B28B 1/30 - Producing shaped articles from the material by applying the material on to a core, or other moulding surface to form a layer thereon
• C04B 35/587 - Fine ceramics
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H05K 1/03 - Use of materials for the substrate

Abstract

A method according to an embodiment of the present invention for manufacturing a ceramic scribe substrate including a ceramic substrate as an element comprises a laser processing step and a removal step. During the laser processing step, a continuous through groove is formed as a scribe line by radiating a laser onto the surface of a ceramic sintered substrate, whereby a removal portion surrounded by a plurality of the scribe lines is formed. During the removal step, the removal portion is removed by injecting an assist gas coaxial to the laser during laser irradiation. The area of the surface of each portion, of the removal portion, that corresponds to one ceramic substrate is preferably 1.0 mm2to 20.0 mm2.

IPC Classes  ?

• H05K 3/00 - Apparatus or processes for manufacturing printed circuits
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H05K 1/03 - Use of materials for the substrate

Abstract

A filling method of a ceramic molded body according to an embodiment of the present invention includes filling a plurality of holes, which are formed in a CIP rubber mold, with a plurality of pre-treatment molded bodies which are molded bodies before a CIP treatment and have a maximum diameter of 5.0 mm or more, and has a filling step. In the filling step, the plurality of pre-treatment molded bodies is respectively filled into the plurality of holes by suction conveyance. It is preferable that the pre-treatment molded bodies are molded from a mixed powder that has a total amount of ceramic powder of 80% by mass or more and a binder amount of 3% by mass to 20% by mass inclusive.

IPC Classes  ?

• B30B 5/02 - Presses characterised by the use of pressing means other than those mentioned in groups and wherein the pressing means is in the form of a flexible element, e.g. diaphragm, urged by fluid pressure
• B28B 3/00 - Producing shaped articles from the material by using pressesPresses specially adapted therefor
• B28B 7/34 - Moulds, cores, or mandrels of special material, e.g. destructible materials
• B30B 11/00 - Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses or tabletting presses
• B30B 15/30 - Feeding material to presses
• C04B 35/587 - Fine ceramics

Abstract

A rotating positive electrode for an X-ray tube according to an embodiment is formed by laminating at least a target layer that generates X-rays by receiving thermal electrons, a first base layer, and a second base layer. The target layer of the rotating positive electrode for an X-ray tube contains one among tungsten, molybdenum, niobium, tantalum, rhenium, titanium, zirconium, and vanadium as a main component. The first base layer contains molybdenum as a main component and at least one carbide selected from titanium carbide, hafnium carbide, zirconium carbide, tantalum carbide, and niobium carbide. The second base layer contains molybdenum as a main component, and has lower oxygen content and carbon content than the first base layer.

IPC Classes  ?

• H01J 35/10 - Rotary anodesArrangements for rotating anodesCooling rotary anodes
• H01J 9/14 - Manufacture of electrodes or electrode systems of non-emitting electrodes

Abstract

A semiconductor device comprising: a substrate; a first conductive member provided on a part of the surface of the substrate; a plurality of nitride semiconductor layers provided on the substrate and on the first conductive member and separated from each other; a source electrode provided on the nitride semiconductor layers; a drain electrode provided on the nitride semiconductor layer; a gate electrode provided on the nitride semiconductor layers; and a second conductive member extending between the first conductive member and the source electrode in the nitride semiconductor layers, and electrically connected to the first conductive member and the source electrode.

IPC Classes  ?

• H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
• H01L 21/338 - Field-effect transistors with a Schottky gate

Abstract

Provided is a semiconductor device capable of suppressing occurrence of dielectric breakdown. A semiconductor device according to an embodiment comprises a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a gate electrode, a second insulating layer, a third insulating layer, a first field plate electrode, and a fourth insulating layer. The first insulating layer is located between the first electrode and the second electrode in the first direction. The gate electrode is provided on the first insulating layer and includes a first portion and a second portion. A lower surface of the second portion is located above a lower surface of the first portion. The second insulating layer is provided between the first insulating layer and the second portion. The first and second insulating layers include a first insulating material. The third insulating layer is provided on the gate electrode, the first insulating layer, and the second insulating layer. The first field plate electrode is provided on the third insulating layer. The fourth insulating layer is provided on the third insulating layer and the first field plate electrode. The third and fourth insulating layers include a second insulating material.

IPC Classes  ?

• H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

A semiconductor device according to this embodiment has a circuit board that has a first surface facing a first side and a second surface facing a second side on the reverse side from the first side. The semiconductor device has a chip that is mounted on the first surface. The semiconductor device has a heat transfer member that is bonded to the second surface with a first bonding layer interposed therebetween. The semiconductor device has a heat dissipation member that is bonded to a surface of the heat transfer member, said surface facing the second side, with a second bonding layer interposed therebetween. Each of the first bonding layer and the second bonding layer is a sintered body.

IPC Classes  ?

• H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
• H01L 23/40 - Mountings or securing means for detachable cooling or heating arrangements
• H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or

Abstract

The present invention improves the reliability of a semiconductor device. A semiconductor device according to an embodiment comprises: at least one or more first transistors and at least one or more second transistors each having a first end connected to a first node and a second end connected to a second node; at least one or more third transistors and at least one or more fourth transistors each having a first end connected to the second node and a second end connected to a third node; a fifth transistor provided between a gate end of the at least one or more first transistors and the second node; a sixth transistor provided between a gate end of the at least one or more second transistors and the second node; a seventh transistor provided between a gate end of the at least one or more third transistors and the third node; and an eighth transistor provided between a gate end of the at least one or more fourth transistors and the third node.

IPC Classes  ?

• H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements

Abstract

A solar cell (100) according to an embodiment includes a p-electrode(2), an n-electrode(5), a p-type light-absorbing layer (3) provided on the p-electrode and being mainly composed of a cuprous oxide compound, an n-type layer (4) disposed between the p-type light-absorbing layer (3) and the n-electrode (5), and a compound of first metal (6) provided between the p-type light-absorbing layer (3) and the n-type layer (4). Coverage of the compound of the first metal (6) covering the p-type light absorption layer (3) is 10% or more and less than 100%. The first metal is one or more elements selected from the group consisting of Al, Hf, Zr, and B. The cuprous oxide compound (3) is in direct contact with the compound of the first metal (6) and the n-type layer(4).

IPC Classes  ?

• H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
• H01L 31/072 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
• H01L 31/032 - Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups

Abstract

A semiconductor device according to an embodiment comprises: a first electrode; a second electrode; and a silicon carbide layer which includes a first silicon carbide region of a first conductivity type, a second silicon carbide region, a third silicon carbide region, and a fourth silicon carbide region of a second conductivity type which are provided between the first silicon carbide region and a first surface, face a gate electrode, and are electrically connected to the first electrode, a fifth silicon carbide region of the first conductivity type provided between the second silicon carbide region and the first surface and electrically connected to the first electrode, and a sixth silicon carbide region of the first conductivity type which is provided between the first silicon carbide region and the first electrode and between the second silicon carbide region and the fourth silicon carbide region, is in contact with the first electrode, is shallower than the depth of the second silicon carbide region, and has a first conductivity type impurity concentration higher than that of the first silicon carbide region.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/8234 - MIS technology
• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/872 - Schottky diodes

Abstract

This semiconductor device comprises: a silicon carbide layer that includes a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type, and a third silicon carbide region of the first conductivity type, and that has a first surface and a second surface; a first gate electrode and a second gate electrode that extend in a first direction; a first electrode located on the first surface side and including a first portion that is in contact with the second silicon carbide region and the third silicon carbide region at locations between the first gate electrode and the second gate electrode, and a second portion that is provided in the first direction of the first portion and is in contact with the first silicon carbide region at a location between the first gate electrode and the second gate electrode; and a second electrode on the second surface side. When the first conductivity-type impurity concentrations are indicated by a logarithmic scale, the distribution of the first conductivity-type impurity concentrations in a direction from the first surface toward the second surface of the third silicon carbide region includes a plurality of inflection points on the side closer to the first surface relative to a first position at which the maximum impurity concentration is shown in the distribution.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/336 - Field-effect transistors with an insulated gate
• H01L 21/8234 - MIS technology
• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/47 - Schottky barrier electrodes
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
• H01L 29/861 - Diodes
• H01L 29/868 - PIN diodes
• H01L 29/872 - Schottky diodes

Abstract

A sample identification method according to an embodiment includes setting a first reference sequence that includes a first sequence having a single base polymorphic site that is suggested to have a relationship with a disease based on a criterion, the single base polymorphic site being a first base, and a corresponding second reference sequence, outputting the number of first short-chain nucleic acids (the number of ID-2) having the first reference sequence and the number of second short-chain nucleic acids (the number of ID-1) having the second reference sequence, calculating a ratio R = (the number of ID-1/(the number of ID-1 + the number of ID-2)), obtaining a magnitude relationship between the R ratio and a threshold value, and determining, from the number of sequences in which the ratio R is greater than the threshold value, whether or not the sample is derived from a subject having the disease or at risk of developing the disease.

IPC Classes  ?

• C12Q 1/6809 - Methods for determination or identification of nucleic acids involving differential detection
• C12Q 1/6886 - Nucleic acid products used in the analysis of nucleic acids, e.g. primers or probes for diseases caused by alterations of genetic material for cancer
• G16B 30/10 - Sequence alignmentHomology search

Abstract

According to one embodiment, provided is a conduction wire including an electrically conductive flat wire, and an insulating film covering the flat wire. Portions of the insulating film covering ends in a width direction of the flat wire are thicker than a portion thereof covering a center in the width direction of the flat wire.

IPC Classes  ?

• H01B 7/02 - Disposition of insulation
• C23C 26/00 - Coating not provided for in groups
• H01B 12/06 - Films or wires on bases or cores
• H01F 5/00 - Coils
• H01F 5/06 - Insulation of windings
• H01F 6/06 - Coils, e.g. winding, insulating, terminating or casing arrangements therefor
• H01F 27/28 - CoilsWindingsConductive connections

Abstract

In deep neural network (DNN) speech synthesis, the present invention allows synthesized speech to be adjusted more efficiently with respect to similar adjustment locations. A speech synthesis device of the present embodiment is provided with an encoder, a decoder, and an adjusting unit. The encoder, by means of a first neural network, converts attribute information per speech unit into an intermediate representation. The decoder, by means of a second neural network, generates acoustic-feature volumes from the intermediate representations. The adjusting unit utilizes, with at least the attribute information per speech unit being a key, an adjustment dictionary in which adjustment instructions for the acoustic-feature volumes are made values, to determine a segment to which an adjustment instruction will be applied according to the key, and adjusts the acoustic-feature volume in the determined segment on the basis of the adjustment instruction.

IPC Classes  ?

• G10L 13/10 - Prosody rules derived from textStress or intonation
• G10L 25/30 - Speech or voice analysis techniques not restricted to a single one of groups characterised by the analysis technique using neural networks

Abstract

To provide a silicon nitride substrate having improved long-term reliability. According to an embodiment, when a DC electric field of 5 kV/mm is applied to a silicon nitride sintered body at 25°C, the ratio Q25(600)/Q25(5) of the accumulated charge amount 600 seconds from the start of application to the accumulated charge amount 5 seconds from the start of application is 1.0-3.0. The silicon nitride sintered body has thermal conductivity of 65 W/m·K or more.

IPC Classes  ?

• C04B 35/587 - Fine ceramics
• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H05K 1/03 - Use of materials for the substrate

Abstract

Provided is a semiconductor device capable of achieving high breakdown voltage while suppressing an increase in on-resistance. A semiconductor device according to an embodiment of the present invention comprises a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a third electrode, an electrode part, and a region. The second nitride semiconductor layer is provided on the first nitride semiconductor layer, and has a band gap larger than that of the first nitride semiconductor layer. The first electrode is provided on the second nitride semiconductor layer. The second electrode is provided on the second nitride semiconductor layer. The third electrode is provided on the second nitride semiconductor layer between the first electrode and the second electrode. The electrode part is electrically connected to at least one of the first electrode, the second electrode, and the third electrode, and is disposed above the third electrode. Said region is a region in which a fixed charge of negative charge separated from the third electrode is introduced into the second nitride semiconductor layer.

IPC Classes  ?

• H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

[Problem] To provide a semiconductor device having a small output capacity. [Solution] A semiconductor device according to the present embodiment comprises a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, and a third electrode. The first nitride semiconductor layer is provided on the substrate. The second nitride semiconductor layer is provided on the first nitride semiconductor layer and has a band gap greater than that of the first nitride semiconductor layer. The first electrode is provided on the second nitride semiconductor layer. The second electrode is provided on the second nitride semiconductor layer. The third electrode is provided on the second nitride semiconductor layer between the first electrode and the second electrode. The substrate is configured in accordance with the position of the second electrode. The substrate includes at least one of a first insulating layer and a first air layer which are each a region having a dielectric constant lower than that of the substrate.

IPC Classes  ?

• H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

This semiconductor device includes: a nitride semiconductor layer; a plurality of source electrodes extending in a second direction; a plurality of drain electrodes extending in the second direction; a gate electrode provided on the nitride semiconductor layer, located between the source electrode and the drain electrode adjacent to each other in the first direction, and extending in the second direction; an insulating layer provided on the source electrode, the drain electrode, and the gate electrode; and a source wiring part provided on the insulating layer, the source wiring part having a plurality of source pad parts located apart from each other in the first direction and electrically connected to the source electrode, and a source connection part connecting two source pad parts adjacent to each other in the first direction. The width of the source connection part in the second direction is smaller than the width of the source pad part in the second direction.

IPC Classes  ?

• H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate
• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT

Abstract

Provided is a semiconductor device capable of reducing leakage current. The semiconductor device according to an embodiment comprises a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a gate electrode, a fourth semiconductor region of the second conductivity type, a second electrode, and a fifth semiconductor region of the second conductivity type. The first semiconductor region includes a first portion and a second portion provided around the first portion. The second semiconductor region is provided over the first portion. The fourth semiconductor region is provided over the second portion. The second electrode includes a first metal part and a second metal part. The first metal part is in contact with the first portion and the second semiconductor region. The second metal part is in contact with the second portion and the fourth semiconductor region. The first metal part and the second metal part include at least one first element selected from the group consisting of titanium, molybdenum, and vanadium. The fifth semiconductor region is provided below the fourth semiconductor region and is located directly below the second metal portion.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/336 - Field-effect transistors with an insulated gate
• H01L 21/8234 - MIS technology
• H01L 27/06 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
• H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/47 - Schottky barrier electrodes
• H01L 29/872 - Schottky diodes

Abstract

The present invention provides a semiconductor device that can achieve improved characteristics. According to an embodiment, this semiconductor device includes first through third electrodes, first through fourth semiconductor members, and a first insulating member. The first semiconductor member is provided between the first and second electrodes, and is of a first conductivity type. The first semiconductor member includes first through third partial regions. A second direction stretching from the first partial region to the second partial region intersects a first direction stretching from the first electrode to the second electrode. The direction stretching from the first partial region to the third partial region aligns with the first direction. The second semiconductor member is of a second conductivity type. The second semiconductor member includes first and second semiconductor regions. The third semiconductor member is of the first conductivity type. The second semiconductor region is provided between the second partial region and the fourth semiconductor member in the first direction. The fourth semiconductor member is of the first conductivity type or does not contain impurities of the second conductivity type. The third partial region is provided between the first partial region and the third electrode in the first direction.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/47 - Schottky barrier electrodes
• H01L 29/872 - Schottky diodes

Abstract

A semiconductor device according to this embodiment comprises: a substrate; first through fourth conductive parts that are provided on the substrate; a first transistor that has a drain connected to the first conductive part and a source connected to the second conductive part; and second and third transistors that each have a drain connected to the second conductive part, a source connected to the third conductive part, and a gate connected to the fourth conductive part. The second conductive part includes a first section and a second section that are respectively in contact with the second and third transistors. The third conductive part includes a third section and a fourth section to which the sources of the second and third transistors are respectively connected, and a fifth section that is electrically connected to the third and fourth sections. The fourth conductive part includes a sixth section and a seventh section to which the gates of the second and third transistors are respectively connected, and an eighth section that is electrically connected to the sixth and seventh sections. The shape of the eighth section is different from the shapes of the sixth section and the seventh section.

IPC Classes  ?

• H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements

Abstract

A semiconductor device according to one embodiment of the present invention comprises: a first metal layer; a semiconductor chip that includes an upper electrode, a lower electrode, a semiconductor layer provided between the upper electrode and the lower electrode, and a first resin layer provided on the upper electrode and containing a first resin; a second metal layer that is provided between the first metal layer and the lower electrode and contains silver (Ag) or copper (Cu); a second resin layer that is annular, covers the outer peripheral part of the semiconductor chip, and contains a second resin different from the first resin; and a third resin layer that is provided between the first resin layer and the second resin layer and contains a third resin different from the first resin and the second resin.

IPC Classes  ?

• H01L 21/58 - Mounting semiconductor devices on supports
• H01L 21/52 - Mounting semiconductor bodies in containers

Abstract

According to an embodiment of the present invention, a semiconductor device includes: a first substrate provided with a first electrode, a second electrode, and a third electrode; a second substrate provided with a fourth electrode, a fifth electrode, and a sixth electrode and disposed side by side with the first substrate in a first direction; a first transistor having a drain connected to the first electrode, a gate connected to the second electrode, and a source connected to the third electrode; a second transistor having a drain connected to the fourth electrode, a gate connected to the fifth electrode, and a source connected to the sixth electrode; a first wiring connecting the second electrode and the fifth electrode in a meandering manner in a second direction; and a second wiring connecting the third electrode and the sixth electrode in a meandering manner in the second direction.

IPC Classes  ?

• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H02M 7/48 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Abstract

The present invention detects a problem that is difficult to sense by using a picking robot, and updates inventory information in a warehouse system in accordance with the problem.　An article inspection device according to an embodiment comprises: a reception unit that, on the basis of an order list, receives an inspection instruction including an article ID of an article picked up by a picking robot and the weight of the article; a weight sensor that measures the weight of the article; a determination unit that determines whether a problem occurs in the article on the basis of the weight of the article included in the inspection instruction and the measured weight of the article; a generation unit that generates an inspection result corresponding to the determination; and a transmission unit that transmits the result of inspection.

IPC Classes  ?

• B65G 1/137 - Storage devices mechanical with arrangements or automatic control means for selecting which articles are to be removed

Abstract

A film forming apparatus of an embodiment includes an application unit, a drying unit, and a conveyance unit. The application unit applies a raw material liquid to a surface of a substrate, and the drying unit dries the raw material liquid applied to the substrate. The conveyance unit includes a conveyance roll capable of supporting the substrate, and conveys the substrate while passing through an application area in which the raw material liquid is applied and a drying area in which the raw material liquid is dried in order from an upstream side. The conveyance unit conveys the substrate from an upstream end of the application area to a downstream end of the drying area in a state where the substrate does not contact the conveyance roll.

IPC Classes  ?

• B05C 13/02 - Means for manipulating or holding work, e.g. for separate articles for particular articles
• B05C 9/14 - Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by groups , or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating

Abstract

3222-type crystal phase.

IPC Classes  ?

• H01F 1/01 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials

Abstract

Provided is a ceramic scribe substrate from which multiple parts having minimal burrs or chipping at the time of division can be obtained. The ceramic scribe substrate has a side scribe line and a corner scribe line, and an auxiliary scribe line crossing an intersection of the corner scribe line and the side scribe line along the side scribe line is formed in the vicinity of the intersection. The length of the auxiliary scribe line is 0.5 mm or more and 15.0 mm or less, and the side scribe line and the auxiliary scribe line are formed by dots.

IPC Classes  ?

• H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H05K 1/02 - Printed circuits Details

Abstract

A semiconductor device comprising: a substrate; a gallium nitride layer that is provided on a non-polar surface of the substrate and has a plurality of fin parts that are positioned apart from each other in a first direction parallel to the c-axis direction, and extend in a second direction orthogonal to the first direction; an electron supply layer provided on the Ga-surface of the fin parts; a gate electrode positioned between the source finger part and the drain finger part in the second direction, and facing the electron supply layer in the first direction; and a first insulating film provided between the gate electrode and the electron supply layer.

IPC Classes  ?

• H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
• H01L 21/338 - Field-effect transistors with a Schottky gate
• H01L 29/812 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate with a Schottky gate

Abstract

Provided are an inspection device, an inspection system, an inspection method, and a semiconductor device manufacturing method which are capable of improving efficiency. According to an embodiment, this inspection device includes a control unit electrically connected to a semiconductor device. The semiconductor device includes a semiconductor member, a transistor part, and a diode part. The transistor part includes a source electrode, a drain electrode, and a gate electrode. The control unit can perform a first operation, a first elapsed operation, a second operation, and a first determination operation. In the first operation, the control unit sets the gate electrode to an ON potential and detects the drain potential in a state in which a current source is connected to the drain electrode. In the first elapsed operation, the control unit sets the gate electrode to an OFF potential in a state in which the current source is connected to the drain electrode. In the second operation, the control unit sets the gate electrode to an ON potential and detects the drain potential. In the first determination operation, the control unit inspects the semiconductor device on the basis of the difference between detection values.

IPC Classes  ?

• G01R 31/26 - Testing of individual semiconductor devices

Abstract

The present invention provides a semiconductor device capable of improving characteristics. According to an embodiment, this semiconductor device includes first to third electrodes, first to fifth semiconductor members, and a first insulating member. The first semiconductor member is of a first conductivity type. A sixth partial region of the first semiconductor member comes into Schottky contact with the second electrode. The second semiconductor member is of a second conductivity type. The third semiconductor member is of the first conductivity type. The fourth semiconductor member is of the second conductivity type. The fifth semiconductor member is of the second conductivity type. A fifth impurity concentration of the second conductivity type in the fifth semiconductor member is lower than a fourth impurity concentration of the second conductivity type in the fourth semiconductor member.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed

Abstract

A method for filling a ceramic molded body according to an embodiment fills a plurality of pre-treatment molded bodies, which are molded bodies before CIP treatment, into a plurality of holes formed in a CIP rubber mold, and has a placement step, an input step, and an operation execution step. In the placement step, a fall prevention frame is placed on the edge of the CIP rubber mold. In the input step, the plurality of pre-treatment molded bodies are input into the CIP rubber mold with the fall prevention frame in place. The operation execution step executes an operation of fitting the pre-treatment molded bodies which are not fitted into any of the plurality of holes formed in the CIP rubber mold with the fall prevention frame in place, among the plurality of pre-treatment molded bodies.

IPC Classes  ?

• B28B 3/00 - Producing shaped articles from the material by using pressesPresses specially adapted therefor
• B28B 1/087 - Producing shaped articles from the material by vibrating or jolting by means acting on the mould
• B28B 7/34 - Moulds, cores, or mandrels of special material, e.g. destructible materials
• F16C 33/32 - Balls

Abstract

A method for producing a ceramic granulated powder according to an embodiment comprises a first slurry preparation step, a first granulation step, a cyclone recovery step, a spray-dry recovery step, a first slurry preparation step, and a first granulation step. In the first slurry preparation step, a first slurry comprising a first mixture that contains a first powder is prepared. In the first granulation step, a first ceramic granulated powder containing the first mixture is produced by granulating the first slurry. In the cyclone recovery step, a cyclone reuse powder is acquired during or after the first granulation step. In the spray-dry recovery step, a spray-dry reuse powder is acquired after the first granulation step. In the second slurry preparation step, a second slurry comprising a second mixture obtained by mixing both reuse powders is prepared. In the second granulation step, a second ceramic granulated powder containing the second mixture is produced by granulating the second slurry.

IPC Classes  ?

• C04B 35/626 - Preparing or treating the powders individually or as batches
• B01J 2/04 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic by dividing the liquid material into drops, e.g. by spraying, and solidifying the drops in a gaseous medium
• C04B 35/587 - Fine ceramics
• F16C 33/32 - Balls

Abstract

An electric power system according to an embodiment of the present disclosure is provided with one or more pieces of equipment connected to an electrical grid and a grid control device which is connected to the one or more pieces of equipment over a network and which controls the electrical grid, the electric power system comprising: a first processing unit that repeatedly acquires harmonic information over time or when the electrical grid or the equipment changes state, the harmonic information being information pertaining to harmonics of frequencies other than the fundamental frequency of the electrical grid, based on voltage or current in the equipment or the operation or control of the equipment; and an evaluation unit that evaluates the stability of the electrical grid with respect to the harmonics on the basis of the harmonic information.

IPC Classes  ?

• H02J 13/00 - Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the networkCircuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network
• H02J 3/01 - Arrangements for reducing harmonics or ripples
• H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters or transformers

Abstract

An information processing device according to an embodiment generates a production plan representing a plan for producing a plurality of products by a production plant on the basis of a solution of a production planning problem, generates an energy planning problem on the basis of the production plan, and generates an energy supply plan representing a plan for operating an energy plant that consumes a first energy and supplies a second energy to the production plant on the basis of a solution of the energy planning problem. The production planning problem is a problem of minimizing the time-series energy difference between time-series target energy and time-series consumption energy consumed when the production plant produces the plurality of products, and a solution representing the production plan is obtained. The energy planning problem is a problem of minimizing the first energy under the condition that the second energy of the time series consumed when the production plant is operated according to the production plan is at least supplied to the production plant, and a solution representing the energy supply plan is obtained.

IPC Classes  ?

• H02J 3/00 - Circuit arrangements for ac mains or ac distribution networks
• G06Q 50/06 - Energy or water supply

Abstract

Provided is a gas-insulated bus in which reduction in bus diameter can be easily achieved. The gas-insulated bus according to an embodiment comprises a metal container, an energization conductor, and an insulating spacer. The metal container is formed into a tubular shape, and an insulating gas is sealed in the internal space thereof. The energization conductor is housed in the internal space of the metal container so as to extend along the axial direction of the metal container. The insulating spacer supports the energization conductor in the internal space of the metal container so that the metal container and the energization conductor are electrically insulated from each other. The metal container has: a first container body part; a second container body part installed so as to be aligned with the first container body part in the axial direction; and an intermediate ring member interposed between the first container body part and the second container body part in the axial direction. The insulating spacer is installed on the inner peripheral surface of the intermediate ring member, and the insulating spacer and the intermediate ring member are fastened to each other in the radial direction by using a fastening member.

IPC Classes  ?

• H02G 5/06 - Totally-enclosed installations, e.g. in metal casings
• H02B 13/045 - Details of casing, e.g. gas tightness

Abstract

A semiconductor device according to an embodiment comprises: a first conductor which is exposed at a first surface of a package; first and second transistors, drains of which are connected to the first conductor; an insulation substrate; a second conductor and a third conductor which are exposed at a second surface of the package and which are provided on a third surface of the insulation substrate; a first wiring layer which is embedded in the insulation substrate and which is connected to the second conductor; a fourth conductor which is connected to the third conductor and to a source of the first transistor; a fifth conductor which is connected to the third conductor and to a source of the second transistor; a sixth conductor which is connected to the second conductor and to a gate of the first transistor; and a seventh conductor which is provided on a fourth surface of the insulation substrate and which is connected to the first wiring layer and to a gate of the second transistor.

IPC Classes  ?

• H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/12 - Mountings, e.g. non-detachable insulating substrates
• H01L 23/32 - Holders for supporting the complete device in operation, i.e. detachable fixtures

Abstract

A semiconductor device according to an embodiment of the present invention includes: a silicon carbide layer which has a first surface and a second surface; a first trench and a second trench, which extend in a first direction; a gate electrode; a gate insulating layer; an n-type first silicon carbide region; a p-type second silicon carbide region which is located between the first silicon carbide region and the first surface, and which is shallower than the trenches; a plurality of n-type third silicon carbide regions and a plurality of p-type fourth silicon carbide regions, which are located between the second silicon carbide region and the first surface, and which are alternately formed in the first direction; an n-type fifth silicon carbide region which is located between the first trench and the second trench and between the second silicon carbide region and the third silicon carbide region and the fourth silicon carbide region, and which is in contact with the first trench and extends in the first direction; and an n-type sixth silicon carbide region which is located so as to be separated from the fifth silicon carbide region in a second direction that is perpendicular to the first direction, and which is in contact with the second trench and extends in the first direction.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
• H01L 21/266 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation using masks
• H01L 21/336 - Field-effect transistors with an insulated gate
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect

Abstract

A granulated particle (100) for cold storage particles of an embodiment includes: a first region (10a) having a first void fraction; and a second region (10b) that is closer to an outer edge of the particle than the first region (10a) and has a second void fraction lower than the first void fraction.

IPC Classes  ?

• H01F 1/01 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials

Abstract

An information processing device according to the present invention comprises a processing unit. The processing unit: selects a plurality of pieces of common data that are associated with feature information that is the same or similar to designated first feature information from a plurality of pieces of common data that are time-series data that indicate changes in the charging/discharging of a battery and are associated with different feature information that indicates features of the charging/discharging; and synthesizes the selected plurality of pieces of common data to generate first time-series data for the first feature information.

IPC Classes  ?

• G01R 31/382 - Arrangements for monitoring battery or accumulator variables, e.g. SoC
• G01R 31/367 - Software therefor, e.g. for battery testing using modelling or look-up tables
• G01R 31/392 - Determining battery ageing or deterioration, e.g. state of health

Abstract

The present invention provides a semiconductor device which is capable of achieving stable characteristics. According to an embodiment of the present invention, a semiconductor device includes an element part. The element part includes a semiconductor member that includes a pad part semiconductor region and a cell semiconductor region, a gate electrode, and a gate pad part which is electrically connected to the gate electrode. The gate pad part includes a first conductive member and a first member that is provided between the pad part semiconductor region and the first conductive member. The first member includes a first region and a second region, which are aligned in a second direction that intersects with a first direction from the pad part semiconductor region to the first conductive member. At least a part of the first conductive member is located between the first region and the second region. A first surface of the at least a part of the first conductive member includes first irregularities.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed

Abstract

Provided is a portable electronic device on which a prescribed encryption algorithm can be installed using limited hardware resources.　A portable electronic device according to an embodiment comprises a memory, an interface, and a processor. The memory stores encryption information including an encryption algorithm. The interface communicates with an information processing device. The processor generates a random number. The interface transmits the encryption information to the information processing device, and receives a public key transmitted by the information processing device from among public keys and secret keys generated on the basis of the encryption algorithm. The processor generates an encrypted random number from the random number by means of encryption processing based on the aforementioned public key. The interface transmits the encrypted random number to the information processing device. The processor generates, on the basis of the random number, a session key to be used for communication with the information processing device.

IPC Classes  ?

• H04L 9/08 - Key distribution

Abstract

In an arbitrarily defined cross-section passing through the center of gravity of a ceramic sintered body according to an embodiment of the present invention, when a portion on the surface side is defined as a surface part and a portion centered at the center of gravity and existing within a radius of 1 mm is defined as a center-of-gravity part, and when an X-Ray Diffractometers (XRD) analysis is performed on the surface part and the center-of-gravity part, detection positions of the top four peaks in a descending order of the intensities of peaks detected within a diffraction angle range of 10-60° are the same between the surface part and the center-of-gravity part within a range of ±0.5°. The surface part is suitably set at a portion 0.5-1.0 mm from the surface.

IPC Classes  ?

• C04B 35/596 - Composites
• C04B 35/117 - Composites
• C04B 35/645 - Pressure sintering
• F16C 19/52 - Bearings with rolling contact, for exclusively rotary movement with devices affected by abnormal or undesired conditions
• F16C 33/32 - Balls

Abstract

The present invention improves characteristics. According to one embodiment of the present invention, in a first semiconductor part of a semiconductor device, a second direction from a first partial region to a second partial region intersects with a first direction from a first electrode to a second electrode, a direction from the first partial region to a third partial region extends along the first direction, a third direction from the second partial region to a fourth partial region intersects with the first direction and a plane that includes the second direction, a direction from the fourth partial region to a fifth partial region extends along the first direction, a direction from the second partial region to a sixth partial region extends along the first direction, a direction from the fourth partial region to the sixth partial region extends along the third direction, the concentration of an impurity having a first conductivity type in the sixth partial region is higher than the concentration of the impurity having the first conductivity type in the first partial region, the second partial region, the third partial region, the fourth partial region, and the fifth partial region, and the fifth partial region and the second electrode are in a Schottky contact with each other.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/872 - Schottky diodes

Abstract

The present invention provides a semiconductor device that makes it possible to improve withstand voltage. A semiconductor device according to one embodiment comprises first to third electrodes and first and second semiconductor parts. The first semiconductor part is of a first conductivity type. The first semiconductor part includes first to third semiconductor regions. The concentration of impurities of the first conductivity type in the second and third semiconductor regions is higher than the concentration of impurities of the first conductivity type in the first semiconductor region. The second semiconductor part includes first to fourth portions. The first to third portions are provided to a cell part. The first portion and the third portion have a first depth. The second portion is provided between the first portion and the third portion. The second portion has a second depth which is shallower than the first depth. The first portion is provided on the second semiconductor region. The fourth portion is provided on the third semiconductor region.

IPC Classes  ?

• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/12 - Semiconductor bodies characterised by the materials of which they are formed
• H01L 29/872 - Schottky diodes

Abstract

According to an embodiment, a portable electronic device comprises an interface, a memory, and a processor. The interface communicates with an external device. The memory stores setting information for each of a plurality of different processing methods for executing specific processing. The processor selects one processing method for executing specific processing in accordance with information supplied from the external device, and executes the specific processing using the selected processing method.

IPC Classes  ?

• G06K 19/07 - Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards with integrated circuit chips
• H04L 9/14 - Arrangements for secret or secure communicationsNetwork security protocols using a plurality of keys or algorithms

Abstract

A speech processing assistance device (10) comprises: an input reception unit (20B); and a recording unit (20F). The input reception unit (20B) receives input of parameters including at least a plurality of mutually different emotion types and a mixing ratio of a plurality of types of emotions during reproduction of speech data to be edited. The recording unit (20F) records the parameters, which have been received as the input, in association with a reproduction timing when the input of the parameters has been received in the speech data.

IPC Classes  ?

• G10L 13/10 - Prosody rules derived from textStress or intonation