Abstract

A power module includes a heat dissipation substrate, a carrier, a connection substrate, a power transistor chip group, a plurality of conductive members, a plurality of external connection leads, and a package. The carrier is disposed on the heat dissipation substrate and includes an insulation plate and a patterned metal circuit layer. The connection substrate is disposed on the patterned metal circuit layer and includes a multilayered metallic connection structure. The power transistor chip group is disposed on the connection substrate and includes a plurality of power transistor chips electrically connected to one another through the multilayered metallic connection structure. The conductive members are electrically connected to the patterned metal circuit layer of the carrier. The external connection leads are disposed on the patterned metal circuit layer. The package packages the heat dissipation substrate, the carrier, the connection substrate, the power transistor chip group, and the external connection leads.

IPC Classes  ?

• H01L 23/373 - Cooling facilitated by selection of materials for the device
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass

Abstract

A semiconductor module includes a substrate, at least one chip, at least one signal assembly and an encapsulant. The chip is disposed on and electrically connected to the substrate. The signal assembly is disposed on the substrate along a normal direction of the substrate and electrically connected the substrate. The signal assembly includes at least one power semiconductor package signal connection element disposed on the substrate and at least one implanted signal pin inserted into the power semiconductor package signal connection element. The encapsulant is disposed on the substrate and has at least one groove. The encapsulant covers the chip and the power semiconductor package signal connection element. From a top surface of the encapsulant relatively away from the substrate, the groove extends toward the substrate until at least an upper surface of the power semiconductor package signal connection element is exposed.

IPC Classes  ?

• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/498 - Leads on insulating substrates
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A driving device includes a lead frame, a plurality of high-side driving modules, at least one low-side driving module, a plurality of high-side switching modules, a plurality of low-side switching modules, and an outer package. The lead frame has a plurality of high-side driving regions, at least one low-side driving region, a plurality of high-side switching regions, and a plurality of low-side switching regions. The high-side driving modules are respectively disposed in the high-side driving regions. Each of the high-side driving modules includes a built-in package, a primary-side circuit, a drive-side circuit, and a bootstrap diode. The built-in package packages the primary-side circuit, the drive-side circuit, and the bootstrap diode. The built-in package has a bottom surface. The bottom surface is provided with a plurality of leads. The leads are electrically connected to the primary-side circuit, the drive-side circuit, and the bootstrap diode.

IPC Classes  ?

• H01L 23/495 - Lead-frames
• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

A semiconductor module includes a substrate, at least one chip, at least one signal assembly, a first molding compound, and a second molding compound. The chip is disposed on the substrate and electrically connected to the substrate. The signal assembly is disposed on the substrate in a normal direction of the substrate and electrically connected to the substrate. The first molding compound is disposed on the substrate. The first molding compound at least covers the chip and has at least one opening, and the opening exposes the signal assembly. The second molding compound is disposed on the substrate and fills the opening. The second molding compound is located between the signal assembly and the first molding compound, and covers the signal assembly. At least one contact interface is formed between the second molding compound and the first molding compound.

IPC Classes  ?

• H01L 23/498 - Leads on insulating substrates
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass

Abstract

Disclosed are an energy conversion module and an energy conversion device. The energy conversion module includes an encapsulation structure and an integrated module packaged therein, the integrated module includes a trace, a power chip, a transistor control element and an energy storage device. The trace includes at least two electrodes, one is exposed from a first surface of the encapsulation structure, and the other is exposed from a second surface of the encapsulation structure. The first surface is opposite to the second surface. The power chip is respectively connected to the two electrodes of the trace. The transistor control element controls the power chip to perform energy conversion through the trace. The energy storage device supplies energy to the transistor control element through the trace.

IPC Classes  ?

• H10W 74/10 -
• H10W 72/50 -
• H10W 74/00 -

Abstract

A power semiconductor package signal connection component includes a cylinder having a first through hole and two bases respectively disposed on opposite sides of the cylinder. Each base includes a continuous protrusion pattern and has a flat surface, a curved surface, and a second through hole. The flat surface is connected to the curved surface, and a first side of the curved surface is connected to the cylinder. The second through hole runs through the curved surface and communicates with the first through hole. The continuous protrusion pattern is connected to a second side of the curved surface and is located on the flat surface.

IPC Classes  ?

• H10W 40/25 -
• H10W 20/20 -
• H10W 90/00 -

Abstract

A heat dissipation structure includes a substrate and an annular groove. The substrate has an upper surface and a lower surface opposite to each other. The annular groove is configured on the upper surface of the substrate to divide the substrate into a configuration area and a periphery area. The annular groove is located between the configuration area and the periphery area. A depth of the annular groove is less than or equal to half of a thickness of the substrate.

IPC Classes  ?

• H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
• H01L 23/367 - Cooling facilitated by shape of device
• H01L 23/373 - Cooling facilitated by selection of materials for the device

Abstract

A circuit substrate includes a base material, a first electrode, and a second electrode. The base material has an upper side and a lower side opposite to each other in a length direction. The first electrode extends and is configured on the base material along the length direction. The second electrode is configured beside the first electrode and includes a first portion and a second portion connected to each other. The first portion is configured on the base material along the length direction. The second portion is configured on the base material along a width direction and is located between the upper side and the first electrode. A cross-sectional width of the first portion becomes larger from the lower side to the upper side.

IPC Classes  ?

• H05K 5/00 - Casings, cabinets or drawers for electric apparatus
• H05K 1/18 - Printed circuits structurally associated with non-printed electric components

Goods & Services

Electronic chips for the manufacture of integrated circuits; Circuit boards; Semiconductors; Microcircuits; Integrated circuits; Electronic circuits; Semiconductor chips; Electronic components in the nature of semiconductors; Circuit boards provided with integrated circuits; Silicon wafers; Wafers for integrated circuits; Semiconductor devices; Microchips

Goods & Services

Electronic chips; Circuit boards; Semiconductors; Integrated circuits; Electronic circuits; Semiconductor chips; Semiconductor elements; Integrated circuit boards; Silicon wafers; Wafers for integrated circuits; Semiconductor devices; Microchips.

Abstract

An electronic actuator device and a control method thereof are provided. The electronic actuator device includes a plurality of first and second power switches and a driving circuit. The first power switches respectively provide a first reference voltage to a plurality of voltage receiving ends of a motor respectively according to a plurality of first control signals. The second power switches respectively provide a second reference voltage to the voltage receiving ends respectively according to a plurality of second control signals. The driving circuit generates the first and second control signals. In a braking operation, the first power switches are turned on during a plurality of first time periods, and the second switches are turned on during a plurality of second time periods that are alternate and non-overlapped with the first time periods. An interval time period is present between each adjacent two of the first and second time periods.

IPC Classes  ?

• H02P 6/24 - Arrangements for stopping
• H02P 6/06 - Arrangements for speed regulation of a single motor wherein the motor speed is measured and compared with a given physical value so as to adjust the motor speed

Abstract

An alternator and a rectifier thereof are provided. The rectifier includes a transistor and a gate voltage control circuit. The transistor is controlled by a gate voltage. The gate voltage control circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. During a first time interval after the voltage difference drops to a first preset threshold voltage, the gate voltage control circuit determines whether the voltage difference is less than a second preset threshold voltage, and decides whether to provide the gate voltage to turn on the transistor. When the transistor is turned on, the voltage difference substantially equals to a first reference voltage. And during a second time interval, the gate voltage control circuit regulates the gate voltage to set the voltage difference substantially to a second reference voltage.

IPC Classes  ?

• H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
• H02M 1/00 - Details of apparatus for conversion
• H03K 17/30 - Modifications for providing a predetermined threshold before switching
• H02K 11/049 - Rectifiers associated with stationary parts, e.g. stator cores

Abstract

An alternator and a rectifier thereof are provided. The rectifier includes a transistor and a gate voltage control circuit. A control end of the transistor receives a gate voltage. The gate voltage control circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. The gate voltage control circuit detects a first time point when the voltage difference is less than a first preset threshold voltage, provides the gate voltage during a first time interval after the first time point to turn on the transistor, and sets the voltage difference to a first reference voltage. The gate voltage control circuit regulates the gate voltage to set the voltage difference to a second reference voltage during a second time interval after the first time interval. The first time interval is independent of a cycle of the input voltage.

IPC Classes  ?

• H02M 7/219 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
• H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

Abstract

An intelligent power module packaging structure includes an insulated heat dissipation substrate, a plurality of power devices, a control chip, a lead frame, and an encapsulant. The insulated heat dissipation substrate has a first surface and a second surface opposite to the first surface. The power devices are disposed on the first surface. The control chip is disposed on the first surface. The control chip provides a gate driver function for driving the power devices and a pulse width modulation function. The lead frame is bonded onto the first surface. The power devices are electrically connected to the control chip and the lead frame. The encapsulant at least encapsulates the power devices, the control chip, and a portion of the lead frame, and the second surface is entirely or partially exposed outside the encapsulant.

IPC Classes  ?

• H01L 23/373 - Cooling facilitated by selection of materials for the device
• H01L 23/498 - Leads on insulating substrates
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A chip packaging structure includes a heat dissipation substrate, a pre-molded chipset, an interconnection and a second encapsulant. The pre-molded chipset is located on the heat dissipation substrate. The interconnection is located in the packaging structure and electrically connects the heat dissipation substrate and the pre-molded chipset. The second encapsulant covers part of the heat dissipation substrate, part or all of the interconnection, and part or all of the pre-molded chipset. The pre-molded chipset includes a thermally conductive substrate, at least two chips, a patterned circuit, and a first encapsulant. The patterned circuit is located in the pre-molded chipset. At least two chips are electrically connected by the patterned circuit. The first encapsulant covers at least two chips and part or all of the patterned circuit. A manufacturing method of a chip packaging structure is also provided.

IPC Classes  ?

• H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
• H01L 23/28 - Encapsulation, e.g. encapsulating layers, coatings
• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
• H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating
• H05K 7/18 - Construction of rack or frame
• H01L 23/367 - Cooling facilitated by shape of device
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 25/07 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in subclass
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/495 - Lead-frames

Abstract

A method for manufacturing a power diode including the following steps is provided. (a) A semi-finished product of the power diode is provided. The semi-finished product of the power diode includes a first electrode, a second electrode, a semiconductor chip, and an adhesive material. The semiconductor chip is located between the first electrode and the second electrode. The adhesive material is located on the first electrode and surrounds the semiconductor chip. (b) The semi-finished product of the power diode is placed into a processing chamber. (c) Pressure in the processing chamber is adjusted to a first predetermined pressure and the first predetermined pressure is maintained for a predetermined time. (d) Pressure in the processing chamber is adjusted to a second predetermined pressure. Step (c) to Step (d) are performed at least twice to form the power diode. (e) The power diode is removed from the processing chamber.

IPC Classes  ?

• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 29/872 - Schottky diodes
• H01L 29/861 - Diodes
• H01L 29/868 - PIN diodes

Abstract

A package structure for power devices includes a heat dissipation insulating substrate, a plurality of power devices, a heat dissipation baseplate, and a thermal interface layer. The heat dissipation insulating substrate has a first surface and a second surface which are opposite to each other, and the power devices are coupled to the first surface of the heat dissipation insulating substrate. The heat dissipation baseplate is disposed at the second surface of the heat dissipation insulating substrate, wherein at least one of a surface of the heat dissipation baseplate and the second surface of the heat dissipation insulating substrate has at least one plateau, and the plateau is at least disposed within a projected area of the plurality of power devices. The thermal interface layer is disposed between the second surface of the heat dissipation insulating substrate and the surface of the heat dissipation baseplate.

IPC Classes  ?

• H01L 23/367 - Cooling facilitated by shape of device
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/498 - Leads on insulating substrates
• H01L 23/373 - Cooling facilitated by selection of materials for the device
• H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers
• H01L 23/433 - Auxiliary members characterised by their shape, e.g. pistons

Abstract

An alternator and a rectifier are provided. The rectifier includes a gate driving circuit, a logic circuit, and a comparison circuit. The gate driving circuit generates a gate voltage, and a control terminal of a transistor receives the gate voltage. The gate driving circuit receives a control signal, and adjusts the gate voltage according to the control signal, so as to control a conductivity degree of the transistor. The logic circuit generates the control signal and a switch signal according to a comparison result and selects a selected voltage according to the switch signal. The comparison result is generated by comparing a sensing voltage of a first terminal of the transistor with the selected voltage.

IPC Classes  ?

• H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
• H02P 9/30 - Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field using discharge tubes or semiconductor devices using semiconductor devices
• H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
• H02P 101/25 - Special adaptation of control arrangements for generators for combustion engines

Abstract

An alternator and a rectifier thereof are provided. The rectifier includes a rectifying transistor, a gate driving circuit and a voltage clamping circuit. The rectifying transistor generates a rectified voltage according to an input voltage and is controlled by a gate voltage. The gate driving circuit generates the gate voltage according to a difference between the rectified voltage and the input voltage. The gate driving circuit provides the gate voltage in a first time interval when the difference is less than the first predetermined threshold voltage, and makes the difference equal to the first reference voltage. The gate driving circuit adjusts the gate voltage in a second time interval and the difference is equal to the second reference voltage. In the second time interval, the voltage clamping circuit clamps the gate voltage by comparing the difference with the third reference voltage and the gate voltage with the fourth reference voltage.

IPC Classes  ?

• H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
• H02P 9/02 - Arrangements for controlling electric generators for the purpose of obtaining a desired output Details
• H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
• H02M 1/00 - Details of apparatus for conversion

Abstract

The disclosure provides an alternator and a rectifier thereof. The rectifier includes a transistor and a gate driving circuit. A control end of the transistor receives a gate voltage. The gate driving circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. The gate driving circuit detects an initial time point when the voltage difference is smaller than a first preset threshold voltage, provides the gate voltage to turn on the transistor during a first time period after the initial time point, and sets the voltage difference to be equal to a first reference voltage. The gate driving circuit sets the voltage difference to be equal to a second reference voltage through adjusting the gate voltage during a second time period after the first time period.

IPC Classes  ?

• H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
• H02K 11/04 - Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection for rectification
• H02M 1/08 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

Abstract

Provided is a rectifier device for a vehicle alternator including a rectifying element for rectifying in an alternator. The rectifying element has an Enhanced Field Effect Semiconductor Diode (EFESD). The EFESD includes a lateral conducting silicide structure and a field effect junction structure integrating side by side. A rectifier, a generator device, and a powertrain for a vehicle are also provided.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

Abstract

A package structure of a power device includes a substrate having a first circuit, a first power device, a second power device, an insulation film having a second circuit, at least one electronic component, and a package. The first power device, the second power device, and the insulation film are disposed on the substrate. The first power device and the second power device are directly electrically connected to each other via the first circuit of the substrate. The electronic component is disposed on the insulation film. The package encapsulates the substrate, the first power device, the second power device, and the electronic component.

IPC Classes  ?

• H01L 23/36 - Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
• H01L 23/498 - Leads on insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/367 - Cooling facilitated by shape of device

Abstract

−1. The power device is disposed on the first substrate, and the second substrate is disposed under the first substrate. A heat capacity of the second substrate is greater than that of the first substrate. The package encapsulates the first substrate, the second substrate, and the power device.

IPC Classes  ?

• H01L 23/28 - Encapsulation, e.g. encapsulating layers, coatings
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 23/373 - Cooling facilitated by selection of materials for the device

Abstract

A DC-to-DC converter and a power allocation method thereof are provided. The DC-to-DC converter includes a switching circuit and a power allocation circuit. The switching circuit is coupled to a DC power source to receive a DC input voltage and controlled by a first control signal to generate a pulse voltage. The power allocation circuit is coupled to the switching circuit to receive the pulse voltage and store an electrical energy. The power allocation circuit is further coupled to the DC power source. The power allocation circuit is controlled by a second control signal to convert the electrical energy into a DC output voltage and provides the DC output voltage to a load, or the power allocation circuit is controlled by the second control signal to recuperate the electrical energy to the DC power source.

IPC Classes  ?

• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
• H02M 3/16 - Conversion of DC power input into DC power output without intermediate conversion into AC by dynamic converters
• H02M 1/00 - Details of apparatus for conversion

Abstract

A short circuit detection circuit and a short circuit detection method for a multi-phase rectifier are provided, which are used for detecting conditions of a spectrum of a FWR signal outputted from the multi-phase rectifier in the frequency domain. Next, determining whether the detected signal indicating the amplitude of the frequency of the AC signal is greater than or equal to the reference signal, so as to determine whether the multi-phase rectifier has a short circuit condition. Therefore, the short circuit detection circuit and the short circuit detection method do not have any requirements for configuring a short circuit detection element on each current path of the multi-phase rectifier, so that the power loss and the cost can be reduced effectively.

IPC Classes  ?

• H02H 7/10 - Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for convertersEmergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for rectifiers
• H02P 29/04 - Arrangements for regulating or controlling electric motors, appropriate for both AC and DC motors by means of a separate brake
• G01R 31/02 - Testing of electric apparatus, lines, or components for short-circuits, discontinuities, leakage, or incorrect line connection
• H02P 1/04 - Means for controlling progress of starting sequence in dependence upon time or upon current, speed, or other motor parameter
• H02P 9/48 - Arrangements for obtaining a constant output value at varying speed of the generator, e.g. on vehicle
• G01R 31/40 - Testing power supplies
• H02P 101/45 - Special adaptation of control arrangements for generators for motor vehicles, e.g. car alternators