Abstract

This disclosure provides an imaging method for detecting spectrum shift and a biosensor for the imaging method. The imaging method includes receiving a first light beam by a photodiode array to simultaneously obtain a first image signal with a first image intensity corresponding to a first filter and a second image signal with a second image intensity corresponding to a double-layered filter including the first filter and a second filter; receiving a second light beam by the photodiode array to simultaneously obtain a third image signal with a third image intensity corresponding to the first filter and a fourth image signal with a fourth image intensity corresponding to the double-layered filter, and determining a spectrum shift from the first light beam to the second light beam by comparing the first and the second image intensity to the third and the fourth image intensity.

IPC Classes  ?

• G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
• G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated
• G01N 21/552 - Attenuated total reflection

Abstract

An optical element including a substrate; a light sensing device disposed in the substrate; a first distant layer disposed above the substrate, wherein a coefficient of thermal expansion of the first distant layer is between 10 ppm/° C. and 300 ppm/° C., and wherein an angle between the sidewall of the first distant layer and a top surface of the substrate is in a range of 10° to 60°; and an inorganic multilayer film covering a top surface and a sidewall of the first distant layer, wherein a coefficient of thermal expansion of the inorganic multilayer film is between 0.5 ppm/° C. and 30 ppm/° C.

IPC Classes  ?

• H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a first color filter segment and a second color filter segment adjacent to the first color filter segment. The first color filter segment and the second color filter segment correspond to different colors. The solid-state image sensor also includes a shielding grid structure disposed between the first color filter segment and the second color filter segment. The shielding grid structure is divided into a first shielding segment and a second shielding segment. The solid-state image sensor further includes a meta structure disposed above the color filter layer. In a top view, the second shielding segment is formed as a triangle, a rectangle, or a combination thereof.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An image sensor includes a sensor layer and a color filter layer disposed on the sensor layer. The image sensor further includes a lens layer disposed on the color filter layer. The lens layer includes a plurality of micro lenses. The image sensor further includes a first cut filter layer disposed over the lens layer. The first surface of the first cut filter layer has a plurality of first protrusions.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An optical device is provided. The optical device includes a substrate, a first photodetector, a waveguide and a nanowell array. The first photodetector is disposed on the substrate. The waveguide is disposed on the first photodetector. The waveguide is in contact with the first photodetector or apart from the first photodetector by a color filter array which is in contact with the waveguide and the first photodetector. The nanowell array is disposed on the waveguide. There is no multi-film filter in the optical device.

IPC Classes  ?

• H04N 25/78 - Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
• H04N 25/11 - Arrangement of colour filter arrays [CFA]Filter mosaics
• H04N 25/773 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
• H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Abstract

The present disclosure provides a fluorescence biosensing system including a sensing device and a light emitting device. The sensing device includes a sensing region, a lower polarizer above the sensing region, a light transmitting element above the lower polarizer, and an upper polarizer above the light transmitting element. The lower polarizer includes a first lower sub-polarizer and a second lower sub-polarizer, and a second polarization direction of the second lower sub-polarizer is 90 degrees shifted from a first polarization direction of the first lower sub-polarizer. The upper polarizer includes a first upper sub-polarizer aligned with the first lower sub-polarizer and a second upper sub-polarizer aligned with the second lower sub-polarizer. The light emitting device is configured to provide an excitation light to the sensing device.

IPC Classes  ?

• G01N 21/64 - FluorescencePhosphorescence

Abstract

A multicolor electrochromic device includes a substrate, a common bottom electrode layer on the substrate, a first layer having a first metal oxide on the common bottom electrode layer, a second layer having a second oxide on the common bottom electrode layer and spaced apart from the first layer, a first top electrode on the first layer, and a second top electrode on the second layer and spaced apart from the first top electrode. The second metal oxide is different from the first metal oxide. A wearable display assembly using the multicolor electrochromic device is also disclosed.

IPC Classes  ?

• G02F 1/155 - Electrodes
• G02B 27/01 - Head-up displays
• G02F 1/1514 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material

Abstract

An image sensor includes a first color filter disposed on a first photodiode, a first grid, and a first micro lens disposed on the first color filter and the first grid. The first grid includes a first main portion and a first shielding portion extended from the first main portion. The first main portion surrounds the first color filter and the first shielding portion partially covers the first color filter such that a first cavity defined by the first shielding portion is configured over the first color filter. The first color filter or the first micro lens includes a first protruding portion filled in the first cavity, and a width of the first protruding portion is in a range from 0.1 pixel size to 0.8 pixel size. A manufacturing method of an image sensor is also disclosed.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements. The solid-state image sensor also includes a color filter layer disposed above the photoelectric conversion elements and the color filter layer includes a first color filter layer. The first color filter layer has a central region, a peripheral region adjacent to the central region, and a corner region diagonally arranged from the central region. The solid-state image sensor further includes a meta structure disposed on the color filter layer. The meta structure includes pillars. The pillars that correspond to the central region, the peripheral region, and the corner region have different arrangements.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H04N 25/671 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction

Abstract

An optical structure is provided. The optical structure includes a substrate and multiple films disposed on the substrate. The multiple films include a first set of multiple films and a second set of multiple films. The first set of multiple films includes a plurality of first material layers and a plurality of second material layers including germanium oxide, germanium nitride or germanium hydroxide which are arranged in an alternating manner. The second set of multiple films includes a plurality of third material layers including germanium oxide, germanium nitride or germanium hydroxide and a plurality of fourth material layers which are arranged in an alternating manner. The thickness of the fourth material layer is greater than that of the first material layer.

IPC Classes  ?

• G02B 5/28 - Interference filters

Abstract

An optical device includes a photoelectric conversion layer, an underlying layer, an anti-reflection layer, and a plurality of meta units. The underlying layer is disposed on the photoelectric conversion layer. The anti-reflection layer is disposed on the underlying layer. The meta units are disposed above the photoelectric conversion layer, in which each of the meta units includes a top portion and a bottom portion, and a projection of the bottom portion on the photoelectric conversion layer is within a projection of the top portion on the photoelectric conversion layer.

IPC Classes  ?

• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• H01L 31/0256 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by the material
• H01L 31/042 - PV modules or arrays of single PV cells

Abstract

An image sensor is provided. The image sensor includes a substrate and an isolation structure disposed over the substrate. The isolation structure has isolation segments in a cross-sectional view and is electrically non-conductive, and the isolation segments form concave tanks that define pixel regions. The image sensor also includes bottom electrodes disposed at bottoms of the concave tanks and reflective layers disposed on sidewalls of the concave tanks. The image sensor further includes a photoelectric conversion layer disposed on the isolation structure and in the concave tanks and a top electrode disposed on the photoelectric conversion layer. Moreover, the image sensor includes an encapsulation layer disposed on the top electrode.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An image sensor includes a first unit. The first unit includes a first photodiode having a first dimension, a second photodiode disposed adjacent the first photodiode and having a second dimension that is greater than the first dimension, a first color filter overlapping the first photodiode and the second photodiode, and a first internal reflector disposed in the first color filter and overlapping the first photodiode. The first internal reflector has an inclined light receiving surface inclined from a top surface of the first color filter toward the second photodiode, and a refraction index of the first internal reflector is smaller than a refraction index of the first color filter.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H04N 25/11 - Arrangement of colour filter arrays [CFA]Filter mosaics

Abstract

An optical device includes a photoelectric conversion layer, an anti-reflection layer, an underlying layer, a bottom meta layer, and a top meta layer. The photoelectric conversion layer includes a plurality of photodiodes. The anti-reflection layer is disposed on the photoelectric conversion layer. The underlying layer is disposed on the anti-reflection layer. The bottom meta layer is disposed on the underlying layer and includes a plurality of bottom meta units and a filling between the bottom meta units, in which the filling is continuously extend from the underlying layer, and a material of the filling is the same as a material of the underlying layer. The top meta layer is disposed above the bottom meta layer and includes a plurality of top meta units and a plurality of air recesses, in which the plurality of air recesses are respectively disposed between two adjacent top meta units.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G02B 1/00 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements

Abstract

The present disclosure provides an image sensor including a photodiode, a micro lens above the photodiode, a color filter between the photodiode and the micro lens, and a polyhedron lens film above the micro lens. The polyhedron lens film includes a plurality of polyhedron lens units protruding away from the photodiode, in which a plurality of orthogonal projections of the plurality of the polyhedron lens units are within an orthogonal projection of the photodiode. Each of the polyhedron lens units includes a bottom facet facing the photodiode, a top facet opposite to the bottom facet, and at least one side facet connecting the top facet and the bottom facet.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G02B 3/08 - Simple or compound lenses with non-spherical faces with discontinuous faces, e.g. Fresnel lens

Abstract

A biosensor is provided. The biosensor includes a plurality of sensor units. Each of the sensor units includes a plurality of photodiodes, a plurality of first electrodes, an electro-wetting chamber, a second electrode, a bottom conductive layer, a photoconductive layer, an open cell chamber, and a top conductive layer. The first electrodes are disposed above the photodiodes. The electro-wetting chamber is disposed above the first electrodes, and a non-polar liquid is disposed in the electro-wetting chamber. The second electrode is disposed on the electro-wetting chamber. The bottom conductive layer is disposed above the second electrode. The photoconductive layer is disposed on the bottom conductive layer. The open cell chamber is disposed on the photoconductive layer and configured to receive a cell. The top conductive layer is disposed on the open cell chamber.

IPC Classes  ?

• B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glasswareDroppers
• G01N 21/39 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
• G01N 21/41 - RefractivityPhase-affecting properties, e.g. optical path length
• G01N 21/64 - FluorescencePhosphorescence

Abstract

The present disclosure provides a color filter array. The color filter array includes at least one minimal repeating unit, wherein the at least one minimal repeating unit includes a first filter set and a second filter set. The first filter set includes a first color filter having a first spectrum, two second color filters having a second spectrum and a third color filter having a third spectrum. The second filter set includes a fourth color filter having the first spectrum, two fifth color filters having the second spectrum, a sixth color filter having the third spectrum and a plurality of broadband filters. The second filter set is arranged to form a quadrilateral annulus, and the first filter set is positioned in an interior of the quadrilateral annulus. The present disclosure also provides a demosaicing method for an image captured via the color filter array.

IPC Classes  ?

• H04N 25/13 - Arrangement of colour filter arrays [CFA]Filter mosaics characterised by the spectral characteristics of the filter elements
• G06T 3/4015 - Image demosaicing, e.g. colour filter arrays [CFA] or Bayer patterns
• H04N 25/133 - Arrangement of colour filter arrays [CFA]Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light

Abstract

An optical filter includes a substrate and a filtering stack disposed on the substrate. The filtering stack includes first layers and second layers, wherein the first layers and the second layers are alternately arranged. The second layers include a plasmonic transparent conducting film (TCF), wherein the plasmonic transparent conducting film is made of non-stoichiometric compounds.

IPC Classes  ?

• G02B 5/20 - Filters
• G02B 5/00 - Optical elements other than lenses
• H10K 30/80 - Constructional details

Abstract

An optical device is provided. The optical device includes a substrate that has a top surface and a bottom surface. The optical device also includes a cover layer disposed on the substrate, and the cover layer has a top surface and a bottom surface. The top surface of the cover layer faces the bottom surface of the substrate. The optical device further includes a first meta structure disposed on the bottom surface of the substrate and a second meta structure disposed on the top surface of the cover layer. Moreover, the optical device includes a detector disposed on the bottom surface of the cover layer.

IPC Classes  ?

• G02B 1/00 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements

Abstract

An image sensor includes a first sensing unit. The first sensing unit includes a pair of photodiodes formed in a substrate and spaced by a deep trench isolation structure, an outer grid over the pair of photodiodes, a color filter filled in the outer grid, and an inner grid disposed in the color filter. The color filter overlaps the pair of photodiodes. The inner grid includes a first spacer, wherein the first spacer is rotated relative to the deep trench isolation structure.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An optical element including a substrate (210), a light sensing device (220) disposed in the substrate (210); a first distant layer (230) disposed above the substrate (210), wherein a coefficient of thermal expansion of the first distant layer (230) is between 10 ppm/℃ and 300 ppm/℃, and wherein an angle between a sidewall of the first distant layer (230) and a top surface of the substrate (210) is in a range of 10° to 60°; and an inorganic multilayer film (240) covering a top surface and the sidewall of the first distant layer (230), wherein a coefficient of thermal expansion of the inorganic multilayer film (240) is between 0.5 ppm/℃ and 30 ppm/℃.

IPC Classes  ?

• H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy

Abstract

An image sensor includes a group of sensor units and a color filter layer disposed within the group of sensor units. The image sensor further includes a dielectric structure and a plurality of polarization splitters disposed corresponding to the color filter layer. Each of the plurality of polarization splitters has a first meta element extending in a first direction from top view and a second meta element extending in a second direction from top view. The second direction is perpendicular to the first direction.

IPC Classes  ?

• G02B 5/30 - Polarising elements
• G02B 5/20 - Filters
• H01L 27/146 - Imager structures
• H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
• H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

Abstract

An optical device is provided. The optical device includes a substrate, a waveguide layer, a first input grating, a first fold grating, and an isolation layer. The waveguide layer is disposed on the substrate. The first input grating is disposed in the waveguide layer. A first incident light passes through the first input grating to form a first light. The first fold grating is disposed in the waveguide layer. The first light passes through the first fold grating to form a first diffracted light in a first direction and a second diffracted light in a second direction. The isolation layer includes a first well array and is disposed on the waveguide layer. When the first diffracted light in the first direction travels to a first top portion corresponding to the first well array of the waveguide layer, the first diffracted light further passes through the first well array.

IPC Classes  ?

• G02B 6/42 - Coupling light guides with opto-electronic elements
• B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glasswareDroppers

Abstract

A light-adjusting device having first regions and second regions is provided. The light-adjusting device includes pillars that form several groups of meta structures. The groups of meta structures correspond to the first regions, and from a top view, the first regions and the second regions are arranged in a checkerboard pattern.

IPC Classes  ?

• H04N 25/13 - Arrangement of colour filter arrays [CFA]Filter mosaics characterised by the spectral characteristics of the filter elements

Abstract

An image sensor is provided. The image sensor includes a substrate and isolation structures disposed on the substrate. The isolation structures are electrically non-conductive and define pixel regions. The image sensor also includes electrodes disposed on the substrate and in direct contact with the isolation structures. The image sensor further includes an active layer disposed between the isolation structures. Moreover, the image sensor includes an encapsulation layer disposed over the active layer. The image sensor also includes a color filter layer disposed over the encapsulation layer.

IPC Classes  ?

• H10F 39/12 - Image sensors
• H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
• H10K 39/32 - Organic image sensors

Abstract

A method forming a grating device includes: providing a substrate; entering the substrate into a process chamber; and depositing a grating material on the substrate to form a grating material layer on the substrate. A refractive index of the grating material gradually changes during depositing the grating material in the process chamber. The grating material layer includes a varying refractive index.

IPC Classes  ?

• G02B 5/18 - Diffracting gratings
• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
• G03F 7/16 - Coating processesApparatus therefor

Abstract

An image sensor includes a group of sensor units, a color filter layer disposed within the group of sensor units, and a dielectric structure and a metasurface disposed corresponding to the color filter layer. The metasurface includes a plurality of peripheral nanoposts located at corners of the group of sensor units from top view, respectively, a central nanopost enclosed by the plurality of peripheral nanoposts, and a filling material laterally surrounding the plurality of peripheral nanoposts and the central nanopost. The central nanopost is offset from a center point of the group of sensor units by a distance from top view.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G02B 1/00 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements

Abstract

An image sensor includes a photoelectric conversion layer, a plurality of deep trench isolations, a first color filter, a first deflector, and a covering layer. The photoelectric conversion layer includes a first photodiode and a second photodiode. The deep trench isolations separate the first photodiode and the second photodiode, in which a pixel dimension is determined by a distance between two adjacent deep trench isolations. The first color filter is disposed on the first photodiode and the second photodiode. The first deflector is disposed on the first color filter. The covering layer covers and surrounds the first deflector. A refractive index of the covering layer is greater than a refractive index of the first deflector, and a difference value between the refractive index of the covering layer and the refractive index of the first deflector is in a range from 0.15 to 0.6.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An ambient light sensor includes a substrate, a metasurface disposed on the substrate, and an aperture layer disposed on the substrate. The metasurface includes a plurality of nanostructures and a filling layer laterally surrounding the plurality of nanostructures. The aperture layer laterally separates the metasurface into a plurality of sub-meta groups.

IPC Classes  ?

• G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
• G01J 1/04 - Optical or mechanical part

Abstract

A transfer system for wafer cassettes includes a tray and a rail compatible with the tray. The tray includes a base plate, a through hole, a wall, and a pair of first positioning features. The through hole is disposed on a center of the base plate, in which the through hole has a first direction axis and a second direction axis perpendicular to the first direction axis. The wall extends from a surface of the base plate and surrounding the through hole, in which the wall separates the base plate into an interior region and an exterior region. The pair of first positioning features having a first level height are in the interior region and arranged parallel to the first direction axis.

IPC Classes  ?

• H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Abstract

The present disclosure provides an image sensor and control method thereof. The image sensor includes a first transparent conductive layer, a second conductive layer, an optical sensor and a semiconductor substrate. The optical sensor is arranged between the first transparent conductive layer and the second conductive layer, and includes a photoelectric conversion layer, wherein the photoelectric conversion layer has a thickness ranging from 500 to 10000 nm, and the optical sensor has a plurality of absorption spectrum ranges. The semiconductor substrate is below the second conductive layer.

IPC Classes  ?

• H04N 23/11 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from different wavelengths for generating image signals from visible and infrared light wavelengths
• H04N 23/12 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from different wavelengths with one sensor only
• H04N 23/667 - Camera operation mode switching, e.g. between still and video, sport and normal or high and low resolution modes
• H04N 25/13 - Arrangement of colour filter arrays [CFA]Filter mosaics characterised by the spectral characteristics of the filter elements
• H04N 25/79 - Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
• H10K 39/32 - Organic image sensors

Abstract

An image sensor includes groups of sensor units, and a color filter layer having color units that disposed within the groups of sensor units, respectively. The color units of the color filter layer include a yellow color unit or a white color unit. The image sensor further includes a dielectric structure disposed on the color filter layer, and a meta surface disposed on the dielectric structure.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H04N 25/133 - Arrangement of colour filter arrays [CFA]Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
• H04N 25/13 - Arrangement of colour filter arrays [CFA]Filter mosaics characterised by the spectral characteristics of the filter elements

Abstract

A manufacturing method includes the following operations. A lens layer is formed above a substrate. A patterned hard mask layer is formed on the lens layer. The lens layer is etched to transfer a pattern of the patterned hard mask layer to the lens layer such that a plurality of lenses are defined, wherein the lens are micro-lenses or meta-surface lenses. A cladding layer is formed to cover the plurality of lenses and the substrate. Portions of the cladding layer are etched to form a first inclined sidewall and a second inclined sidewall, wherein the first inclined sidewall is above the second inclined sidewall, wherein a projection of the first inclined sidewall on the substrate is spaced apart from a projection of the second inclined sidewall on the substrate.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A bio-chip is provided. The bio-chip includes a substrate and a first organic photoelectric conversion element disposed on the substrate. The first organic photoelectric conversion element defines pixel units. The bio-chip also includes a polarizing array disposed on the first organic photoelectric conversion element. The polarizing array includes polarizing sets, each polarizing set corresponds to one pixel unit and has sub-polarizing units that have different polarizing angles. The bio-chip further includes reaction sites disposed on the polarizing array. Each reaction site corresponds to one sub-polarizing unit.

IPC Classes  ?

• B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glasswareDroppers
• G01N 21/64 - FluorescencePhosphorescence

Abstract

The present disclosure provides a light sensing element including a unit. The unit includes a plurality of photodiodes, a color filter disposed above the photodiodes, and a light host embedded in the color filter. The light host is a hollow structure disposed above the photodiodes. The color filter includes a first portion surrounding the light host, a second portion surrounded by the light host, and a third portion covering and physically contacting the first portion, the light host, and the second portion.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A spectrometer includes a plurality of photodetectors, an anti-reflection layer, a grating layer, a distant layer, and a collimator. The anti-reflection layer is disposed on the plurality of photodetectors. The grating layer is disposed above the anti-reflection layer and includes a plurality of grating structures to spread a light into a spectrum to the plurality of photodetectors through the distant layer. The distant layer continuously extends from the grating layer to the anti-reflection layer, the distant layer has a thickness in a range from 400 μm to 2000 μm, and a refractive index of the grating layer is greater than a refractive index of the distant layer. The collimator is disposed above the grating layer, in which the collimator is configured to confine an incident angle of the light from a first micro-lens.

IPC Classes  ?

• G01J 3/28 - Investigating the spectrum
• G01J 3/02 - SpectrometrySpectrophotometryMonochromatorsMeasuring colours Details
• G02B 1/11 - Anti-reflection coatings
• G02B 5/18 - Diffracting gratings

Abstract

The spectrometer includes a lightguide substrate, an upper grating layer, a lower grating layer, an image sensor, and a readout circuit. The upper grating layer is disposed on the lightguide substrate and configured to receive a light. The upper grating layer includes a first grating structure, a second grating structure, and a third grating structure, and the first, second, and third grating structures have different grating periods. The lightguide substrate is configured to diffract the light when the light propagates into the lightguide substrate, such that multiple diffraction lights are formed and each of the multiple diffraction lights has different wavelengths and different optical path. The lower grating layer is disposed under the lightguide substrate and configured to emit the multiple diffraction lights. The image sensor is disposed under the lower grating layer. The readout circuit is disposed under the image sensor.

IPC Classes  ?

• G02B 6/42 - Coupling light guides with opto-electronic elements
• G01J 3/28 - Investigating the spectrum
• G02B 27/30 - Collimators
• G01J 3/18 - Generating the spectrumMonochromators using diffraction elements, e.g. grating
• G01J 3/02 - SpectrometrySpectrophotometryMonochromatorsMeasuring colours Details
• H01L 27/146 - Imager structures
• H10K 39/32 - Organic image sensors

Abstract

An image sensor includes a photodiode array having a plurality of photodiodes, a grid disposed over the photodiode array, and a plurality of optical components disposed over the grid and corresponding to the plurality of apertures, respectively. The grid defines a plurality of apertures corresponding to the plurality of photodiodes, respectively. The optical components includes a first optical component above a first photodiode of the plurality of photodiodes, the first optical component includes at least one lens and provides at least one focus on the first photodiode, in which the focus of the lens of the first optical component misaligns a center of the first photodiode, in a plan view.

IPC Classes  ?

• H10F 39/18 - Complementary metal-oxide-semiconductor [CMOS] image sensorsPhotodiode array image sensors
• H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays

Abstract

A waveguide structure is provided. The waveguide structure includes waveguide combiners stacked one upon the other. Each waveguide combiner includes a waveguide plate and an input coupler disposed on the waveguide plate. The input coupler of at least one waveguide combiner includes first grating pillars, and each first grating pillar has a gradually changing refractive index.

IPC Classes  ?

• G02B 27/01 - Head-up displays
• F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
• G02B 27/30 - Collimators
• G02B 5/18 - Diffracting gratings

Abstract

An operating method of an under-display camera system includes: providing a raw data by a pixel array; generating, by a plurality of color filters respectively disposed on a plurality of first photodiodes of the pixel array, a color information in accordance with the raw data; generating, by a plurality of first narrowband filters respectively disposed on a plurality of second photodiodes of the pixel array, a first narrowband information in accordance with the raw data, wherein a spectrum linewidth of the plurality of first narrowband filters is in a range from 5 nm to 70 nm; reconstructing an edge information from the first narrowband information based on one of a plurality of diffraction patterns provided by a database unit of a point spread function; and obtaining an image by combining the edge information with the color information.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G06T 7/13 - Edge detection
• H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors

Abstract

The optical system includes a projector, a deflector, a polarizer, a first grating coupler structure, and a second grating coupler structure. The projector emits three beams having different wavelengths. The deflector is disposed below the projector and is configured to change incident angles of the three beams and to focus the three beams at the same region of the first grating coupler structure. The first grating coupler structure is below the deflector and is configured to couple the three beams into a light-guide lens such that the three beams travel the same optical path within the light-guide lens. The light-guide lens is connected to the first grating coupler structure and is configured to transmit the three beams. The polarizer is disposed between the projector and the deflector and is configured to filter out transverse electric (TE) modes or transverse magnetic (TM) modes of the three beams.

IPC Classes  ?

• G02B 5/18 - Diffracting gratings
• G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for
• G02B 27/10 - Beam splitting or combining systems
• G02B 27/44 - Grating systemsZone plate systems

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a first color filter segment and a second color filter segment adjacent to the first color filter segment. The first color filter segment and the second color filter segment correspond to different colors. The solid-state image sensor further includes a light-splitting structure disposed in the first color filter segment or the second color filter segment and a grid structure disposed between the first color filter segment and the second color filter segment. The light-splitting structure is separated from the grid structure.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An image sensor includes a sensor unit, a sensing portion disposed within the sensor unit, and an isolation structure corresponding to the sensing portion. The isolation structure includes a first deep trench isolation (DTI) structure surrounding the sensor unit from top view, and a second deep trench isolation structure laterally enclosed by the first deep trench isolation structure. The second deep trench isolation structure is located close to a corner of the sensor unit defined by the first deep trench isolation structure. The second deep trench isolation structure is asymmetrical with respect to a horizontal middle line or a vertical middle line within the sensor unit.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

The image sensor includes a semiconductor substrate, a pillar array layer, a planar layer, and a microlens layer. The semiconductor substrate includes a first photodiode and a second photodiode. The pillar array layer is disposed on the semiconductor substrate, the pillar array layer includes a first pillar array disposed above the first photodiode and a second pillar array disposed above the second photodiode. The first pillar array includes a plurality of first pillar structures, the second pillar array includes a plurality of second pillar structures, all the first pillar structures have a first height, and all the second pillar structures have a second height. The planar layer is disposed on the pillar array layer. The microlens layer is disposed on the planar layer.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A bio-detection device is provided. The bio-detection device includes a plurality of pixel units. Each of the pixel units includes a substrate, one or more pairs of reflective sub-polarizing units, and a plurality of reaction sites. The pairs of reflective sub-polarizing units are disposed on the substrate. The difference of the absolute value between respective polarizing angles of the reflective sub-polarizing units in each pair of reflective sub-polarizing units is 90°. The reaction sites are defined above the one or more pairs of reflective sub-polarizing units. The reaction sites and the reflective sub-polarizing units are in one-to-one correspondence.

IPC Classes  ?

• G01N 21/64 - FluorescencePhosphorescence

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion units and modulation structures embedded in the photoelectric conversion units. The solid-state image sensor also includes isolation structures disposed between the photoelectric conversion units and a protective layer disposed on the photoelectric conversion units. From the top view of the solid-state image sensor, the photoelectric conversion units and the modulation structures form mosaic patterns, and the ratio of the area of one modulation structure to the area of the corresponding mosaic pattern is between 0.1 and 0.9.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An optical device is provided. The optical device includes a time-of-flight (TOF) sensor array, a photon conversion thin film, and a light source. The photon conversion thin film is disposed above the time-of-flight sensor array. The light source emits light with a first wavelength towards the photon conversion thin film to be converted into light with a second wavelength received by the time-of-flight sensor array. The second wavelength is longer than the first wavelength.

IPC Classes  ?

• G01J 5/08 - Optical arrangements
• G01J 5/0806 - Focusing or collimating elements, e.g. lenses or concave mirrors
• G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• G02B 5/08 - Mirrors
• G02B 5/20 - Filters
• G02B 27/30 - Collimators

Abstract

An electrode structure including a top electrode and a bottom electrode located below the top electrode. The top electrode includes a plurality of inner electrodes and an outer electrode connected with the inner electrodes. The inner electrodes are configured to filter a light by wavelength range and filter the light into a polarized light. The inner electrodes extend along a first direction. Each of the inner electrodes includes a metal structure having a first portion and a second portion and a dielectric structure located between the first portion and the second portion of the metal structure. The first portion, the dielectric structure, and the second portion are arranged along a second direction perpendicular to the first direction.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H01L 31/0224 - Electrodes
• H04N 25/11 - Arrangement of colour filter arrays [CFA]Filter mosaics

Abstract

The present invention provides an image processing method, including: obtaining a first image using a camera under a display screen; processing the first image using a processor; obtaining a second image using the camera under the display screen; processing the second image using the processor; and generating a superimposed image after superimposing the first sub-image and the second sub-image.

IPC Classes  ?

• H04N 23/80 - Camera processing pipelinesComponents thereof
• G06T 7/557 - Depth or shape recovery from multiple images from light fields, e.g. from plenoptic cameras
• G06T 5/00 - Image enhancement or restoration

Abstract

A light diffuser includes a main body and first fillers. The first fillers are dispersed in the main body. The first fillers include at least one of ZrO2, Nb2O5, Ta2O5, SixNy, Si, Ge GaP, InP, and PbS, and a diameter of each of the first fillers is in a range from 0.1 μm to 1 μm.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G02B 3/00 - Simple or compound lenses
• G02B 1/00 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements

Abstract

An image sensor includes a plurality of liquid-lens units, which include: a lower electrode and an upper electrode; a dielectric layer disposed between the lower electrode and the upper electrode; a containment space disposed between the dielectric layer and the upper electrode; and a non-polar liquid and a polar liquid filled into the containment space, wherein the non-polar liquid and the polar liquid are immiscible with each other. The non-polar liquid is configured to occupy a first contact area on the dielectric layer under a first voltage, and a second contact area on the dielectric layer under a second voltage. The first contact area is larger than the second contact area, and the second voltage is higher than the first voltage.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G02B 3/12 - Fluid-filled or evacuated lenses

Abstract

The optical device includes a first photodiode, a second photodiode, and a hybrid absorber. The hybrid absorber is disposed above the first photodiode and the second photodiode. The hybrid absorber includes a color filter layer and a plurality of metal-insulator-metal structures. The color filter layer includes a first color filter disposed on the first photodiode and a second color filter disposed on the second photodiode, in which the first color filter is different from the second color filter. The plurality of metal-insulator-metal structures are disposed above the first photodiode and free of disposed above the second photodiode.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An optical system includes a light module, an optical element on a first grating coupler, and a second grating coupler. The light module emits three beams from different positions. The optical element is below the light module and is configured to change incident angles of the three beams and to focus the three beams at the same region of the first grating coupler. The first grating coupler is below the optical element and is configured to couple the three beams into a light-guide substrate. The light-guide substrate is connected to the first grating coupler and is configured to transmit the three beams. The second grating coupler is connected to the light-guide substrate and is configured to enable the three beams departing from the light-guide substrate after the three beams have traveled the same optical path.

IPC Classes  ?

• G02B 6/34 - Optical coupling means utilising prism or grating
• G02B 6/124 - Geodesic lenses or integrated gratings
• G02B 6/42 - Coupling light guides with opto-electronic elements

Abstract

An optical structure includes a grating coupler and a microlens. The grating coupler is configured to receive a laser light. The microlens is above the grating coupler, in which a metal shielding covers the microlens and has an opening to allow the laser light entering an effective coupling region of the grating coupler.

IPC Classes  ?

• G02B 6/34 - Optical coupling means utilising prism or grating
• G02B 6/124 - Geodesic lenses or integrated gratings
• G02B 6/42 - Coupling light guides with opto-electronic elements

Abstract

An image sensor includes a first pixel array. The first pixel array includes multiple photo diodes and a polyhedron structure. The polyhedron structure is located above the photo diodes, and the polyhedron structure includes a bottom facet, a top facet, and at least one side facet. The bottom facet is located between the side facet and the photo diodes, and an orthogonal projection of the polyhedron structure overlaps with photo diodes. The polyhedron structure is configured to divide an incident light into a plurality of light beams focused in the photo diodes.

IPC Classes  ?

• H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
• H10F 39/18 - Complementary metal-oxide-semiconductor [CMOS] image sensorsPhotodiode array image sensors

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The photoelectric conversion elements and the color filter layer form normal pixels and auto-focus pixels, the color filter layer that correspond to the normal pixels are divided into first color filter segments and second color filter segments, the first color filter segments are disposed on at least one side that is closer to an incident light, and the width of the first color filter segments is greater than the width of the second color filter segments.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H04N 25/704 - Pixels specially adapted for focusing, e.g. phase difference pixel sets

Abstract

An image sensor includes: a plurality of sensing portions; a color filter layer disposed on the sensing portions; and a micro-lens disposed on the color filter layer. The micro-lens includes a positive radius of curvature, and a dish structure including a negative radius of curvature is formed within the micro-lens.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A meta optical device is provided. The meta optical device includes an array of meta structures. Each of the meta structures includes a plurality of stacked layers at least including a first layer with a first refractive index and a second layer with a second refractive index. The first refractive index and the second refractive index are different.

IPC Classes  ?

• G02B 1/00 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements
• G02B 3/00 - Simple or compound lenses

Abstract

An image sensor includes a plurality of groups of autofocus sensor units. Each of the groups of autofocus sensor units includes a plurality of sensing portions, a color filter layer disposed on the sensing portions, and a plurality of micro-lenses disposed on the color filter layer and correspondingly above the plurality of sensing portions. The image sensor includes a top film disposed conformally on the plurality of micro-lenses. A joint seam between the micro-lenses within one of the groups of autofocus sensor units has a first depth. A gap between the micro-lenses of the plurality of groups of autofocus sensor units has a second depth. The second depth is larger than the first depth.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The solid-state image sensor also includes an isolation structure disposed between the photoelectric conversion elements. The solid-state image sensor further includes a color filter layer disposed above the semiconductor substrate and having color filter segments that correspond to the photoelectric conversion elements. Moreover, the solid-state image sensor includes an organic film disposed above the color filter layer. The solid-state image sensor also includes an upper electrode and a lower electrode respectively disposed on the upper side and the lower side of the organic film. The solid-state image sensor further includes nano-structures disposed on the upper side or the lower side of the organic film.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H10K 30/00 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
• H10K 30/82 - Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
• H10K 39/32 - Organic image sensors

Abstract

A biosensor structure is provided. The biosensor structure includes a substrate, an insulating layer, a semiconductor layer and a gold disc. The insulating layer is disposed on the substrate. The semiconductor layer is disposed on the insulating layer, and a well is disposed in the semiconductor layer. The gold disc is disposed at bottom of the well.

IPC Classes  ?

• G01N 27/327 - Biochemical electrodes
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

An image sensor is provided. The image sensor includes a substrate, an isolation structure on the substrate, a photoelectric conversion layer, a transparent electrode layer, an encapsulation layer, a color filter layer, and a micro-lens. The isolation structure is electrically non-conductive and defines a plurality of pixel regions on the substrate. The isolation structure prevents cross-talk of electrical signals among pixels. The photoelectric conversion layer is disposed on the pixel regions defined by the isolation structure. The transparent electrode layer is disposed over the isolation structure and the photoelectric conversion layer. The encapsulation layer is disposed over the transparent electrode layer. The micro-lens is disposed on the color filter layer.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements. The solid-state image sensor also includes a mosaic pattern layer disposed above the photoelectric conversion elements. The mosaic pattern layer includes an infrared-passing segment and color filter segments disposed on the periphery of the infrared-passing segment. The solid-state image sensor further includes a first condensing structure disposed on the mosaic pattern layer. The infrared-passing segment and the color filter segments share the first condensing structure.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

The image sensor structure includes a substrate, a readout circuit array, a photoelectric layer and a filter layer. The filter layer has a first spectrum defining a first wavelength. The photoelectric layer has a second spectrum defining a second wavelength. The second wavelength is longer than the first wavelength. The first wavelength corresponds to a first line passing through a first point and a second point on a curve of the first spectrum of the filter layer. The first point aligns with an extinction coefficient of 0.9. The second point aligns with an extinction coefficient of 0.1. The second wavelength corresponds to a second line passing through a third point and a fourth point on a curve of the second spectrum of the photoelectric layer. The third point aligns with an extinction coefficient of 0.9. The fourth point aligns with an extinction coefficient of 0.1.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H04N 25/75 - Circuitry for providing, modifying or processing image signals from the pixel array

Abstract

A biosensor is provided. The biosensor includes a plurality of sensor units. Each of the sensor units includes one or more photodiodes, a first aperture feature disposed above the photodiodes, an interlayer disposed on the first aperture feature, a second aperture feature disposed on the interlayer, and a waveguide disposed above the second aperture feature. The second aperture feature includes an upper grating element and the first aperture feature includes one or more lower grating elements, and a grating period of the upper grating element is less than or equal to a grating period of the one or more lower grating elements. A difference of the absolute values between a first polarizing angle of the upper and lower grating elements in one of the sensor units and a second polarizing angle of the upper and lower grating elements in adjacent one of the sensor units is 90°.

IPC Classes  ?

• G02B 5/18 - Diffracting gratings
• G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
• H01L 31/0232 - Optical elements or arrangements associated with the device

Abstract

An optical device is provided. The optical device has a central region and a first-type region surrounding the central region. The first-type region includes a first sub-region and a second sub-region between the central region and the first sub-region. The optical device includes a substrate. The optical device also includes a meta-structure disposed on the substrate. The meta-structure includes first pillars in the first sub-region and second pillars in the second sub-region. In the cross-sectional view of the optical device along the radial direction of the optical device, two adjacent first pillars have a first pitch, two adjacent second pillars have a second pitch, and the second pitch is greater than the first pitch.

IPC Classes  ?

• G02B 3/00 - Simple or compound lenses
• G02B 5/18 - Diffracting gratings

Abstract

A solid-state image sensor having a first region and a second region adjacent to the first region along a first direction is provided. The solid-state image sensor includes a first unit pattern disposed in the first region. The solid-state image sensor also includes a second unit pattern disposed in the second region and corresponding to the first unit pattern. The first unit pattern and the second unit pattern each includes normal pixels and an auto-focus pixel array. The normal pixels and the auto-focus pixel array in the first unit pattern form a first arrangement, the normal pixels and the auto-focus pixel array in the second unit pattern form a second arrangement, and the first arrangement and the second arrangement are symmetric with respect to the first axis of symmetry.

IPC Classes  ?

• H04N 5/232 - Devices for controlling television cameras, e.g. remote control

Abstract

An optical device is provided. The optical device includes a substrate and a plurality of optical structures. The substrate includes a plurality of photoelectric conversion elements. The optical structures are disposed above the substrate. Each optical structure corresponds to one photoelectric conversion element. Each optical structure includes a first portion and a second portion. The first portion has a first glass transition temperature. The second portion has a second glass transition temperature. The second portion guides the incident light into the photoelectric conversion element. The first glass transition temperature is higher than the second glass transition temperature.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A semiconductor device is provided. The semiconductor device includes a substrate having photoelectric conversion elements. The semiconductor device also includes a first light-shielding layer disposed on the substrate and having first apertures. The semiconductor device further includes a light-adjusting structure disposed on the first light-shielding layer. Moreover, the semiconductor device includes a second light-shielding layer disposed on the light-adjusting structure and having second apertures. The semiconductor device also includes first light-condensing structures covering the second apertures. The semiconductor device further includes a third light-shielding layer disposed on the first light-condensing structure and having third apertures. Furthermore, the semiconductor device includes second light-condensing structures covering the third apertures. The semiconductor device also includes a first light-transmitting layer disposed between the second light-shielding layer and the third light-shielding layer. The refractive index of each first light-condensing structure and the refractive index of the first light-transmitting layer are different.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An optical device is provided. The optical device includes a plurality of IR-cut pixels, a plurality of IR-pass pixels, and a plurality of grids. The grids surround the IR-cut pixels and the IR-pass pixels. Each IR-cut pixel includes a first grating structure. A method for fabricating the optical device is also provided.

IPC Classes  ?

• G02B 5/20 - Filters
• G02B 5/18 - Diffracting gratings

Abstract

A wafer cassette for receiving a wafer is provided. The wafer cassette includes a cassette housing, a first supporting rib and a second supporting rib. The first supporting rib is disposed in the cassette housing, wherein the first supporting rib includes a front supporting portion, a middle supporting portion and a rear supporting portion, the front supporting portion is connected to one end of the middle supporting portion, the rear supporting portion is connected to the other end of the middle supporting portion, and the front supporting portion has a front curved edge. The second supporting rib is disposed in the cassette housing. An edge portion of the wafer is supported by the first supporting rib and the second supporting rib, and the front supporting portion, the middle supporting portion and the rear supporting portion contact the wafer simultaneously.

IPC Classes  ?

• H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
• H01L 21/32 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers using masks

Abstract

An exposure mask is provided. The exposure mask includes a plurality of pattern blocks for defining a plurality of pattern profiles. Each pattern block includes a plurality of pattern units having mask patterns, and the mask patterns are formed in an asymmetric arrangement. The exposure mask may be a binary exposure mask for forming pattern profiles with curved surfaces.

IPC Classes  ?

• G03F 1/38 - Masks having auxiliary features, e.g. special coatings or marks for alignment or testingPreparation thereof
• G03F 7/24 - Curved surfaces
• G03F 1/80 - Etching

Abstract

The solid-state image sensor includes a semiconductor substrate having first and second photoelectric conversion elements, a color filter layer, and a hybrid layer. The isolation structure is disposed between the first and second photoelectric conversion elements. The color filter layer is disposed above the semiconductor substrate. The hybrid layer is disposed between the semiconductor substrate and the color filter layer. The hybrid layer includes a first partition structure, a second partition structure, and a transparent layer. The first partition structure is disposed to correspond to the isolation structure. The second partition structure is surrounded by the first partition structure. The transparent layer is between the first partition structure and the second partition structure. The refractive index of the first partition structure and the refractive index of the second partition structure are lower than the refractive index of the transparent layer.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An image sensor is provided. The image sensor includes a substrate, first photodiodes, second photodiodes, an interlayer, a light-guiding structure, and a micro-lens layer. The first photodiodes and the second photodiodes are alternately disposed in the substrate. The area of each of the first photodiodes is less than the area of each of the second photodiodes from a top view. The interlayer is disposed on the substrate. The light-guiding structure is disposed in the interlayer and over at least one of the first photodiodes or the second photodiodes. The refractive index of the light-guiding structure is greater than the refractive index of the interlayer. The micro-lens layer is disposed on the interlayer.

IPC Classes  ?

• H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
• H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
• H10F 39/18 - Complementary metal-oxide-semiconductor [CMOS] image sensorsPhotodiode array image sensors

Abstract

An image sensor includes: a group of autofocus sensor units; neighboring sensor units adjacent to and surrounding the group of autofocus sensor units, wherein each of the neighboring sensor units has a first side close to the group of autofocus sensor units, and a second side away from the group of autofocus sensor units. The image sensor further includes: a first light shielding structure disposed between the group of autofocus sensor units and the neighboring sensor units; a first extra light shielding structure laterally extending from the first light shielding structure and disposed on at least one of the first side and the second side of one or more of the neighboring sensor units.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G02B 7/36 - Systems for automatic generation of focusing signals using image sharpness techniques

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes a semiconductor substrate having photoelectric conversion elements. The photoelectric conversion elements form an N×N pixel array, where N is a positive integer larger than or equal to 3. The solid-state image sensor also includes a modulation layer disposed above the photoelectric conversion elements. The solid-state image sensor further includes a light-adjusting structure disposed on the modulation layer and corresponding to the N×N pixel array. The N×N pixel array includes a first pixel region having at least one first pixel. The N×N pixel array also includes a second pixel region adjacent to the first pixel region in a first direction and in a second direction different from the first direction and having second pixels. The aperture ratio of the first pixel and the aperture ratio of the second pixel are different.

IPC Classes  ?

• H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
• H01L 27/146 - Imager structures
• H04N 25/00 - Circuitry of solid-state image sensors [SSIS]Control thereof

Abstract

An optical structure is provided. The optical structure includes a sensor, a bandpass filter and a plurality of protrusions. The bandpass filter is disposed above the sensor. The protrusions are disposed on the bandpass filter. The bandpass filter allows light with a wavelength of 700 nm to 3,000 nm to pass through. The protrusions have a size distribution that controls the phase of the incident light to be between 0 and 2π.

IPC Classes  ?

• G02B 5/20 - Filters
• G06V 10/147 - Details of sensors, e.g. sensor lenses
• G06V 40/13 - Sensors therefor
• H04N 23/54 - Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a color filter layer disposed above the photoelectric conversion elements. The color filter layer has a plurality of color filter segments. The solid-state image sensor further includes a partition grid disposed between the color filter segments. Moreover, the solid-state image sensor includes a patterned structure disposed on the color filter layer. The patterned structure has a plurality of patterned segments. The solid-state image sensor also includes a transparent layer disposed on the color filter layer and the partition grid. The transparent layer surrounds the patterned segments. At least one patterned segment is disposed on the partition grid.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H04N 5/335 - Transforming light or analogous information into electric information using solid-state image sensors [SSIS]

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and a second color filter layer disposed adjacent to the first color filter layer, which respectively have a plurality of first color filter segments and a plurality of second color filter segments. Moreover, the solid-state image sensor includes a first metal grid structure disposed between the first color filter layer and the second color filter layer. The solid-state image sensor also includes a second metal grid structure disposed between the first color filter segments and between the second color filter segments. The bottom of the first metal grid structure has a first grid width, and the bottom of the second metal grid structure has a second grid width narrower than the first grid width.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A method forming an image sensor includes: providing a substrate including a plurality of sensing portions; forming a color filter layer on the substrate; forming a micro-lens material layer on the color filter layer; and forming a hard mask pattern on the micro-lens material layer, wherein the hard mask pattern has a first gap and a second gap larger than the first gap. The method includes reflowing the hard mask pattern into a plurality of dome shapes; transferring the plurality of dome shapes into the micro-lens material layer to form a plurality of micro-lenses; and forming a top film conformally on the plurality of micro-lenses.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An image-sensing device includes photoelectric elements for receiving incident light. The photoelectric elements are arranged into unit cells, and each of the unit cells includes a first, a second, a third and a fourth photoelectric element. The first, the second, the third and the fourth photoelectric elements in each of the unit cells are formed of pillar structures, and the first, the second, the third and the fourth photoelectric elements are different sizes. The first photoelectric element captures a first image in a first phase, the second photoelectric element captures a second image in a second phase, the third photoelectric element captures a third image in a third phase, and the fourth photoelectric element captures a fourth image in a fourth phase. The first phase, the second phase, the third phase, and the fourth phase are different.

IPC Classes  ?

• H04N 5/353 - Control of the integration time
• H04N 5/369 - SSIS architecture; Circuitry associated therewith
• G03H 1/30 - Processes or apparatus specially adapted to produce multiple holograms or to obtain images from them, e.g. multicolour technique discrete holograms only
• H04N 9/04 - Picture signal generators

Abstract

A bio-chip is provided. The bio-chip includes a first substrate, a polarizing array, and a plurality of reaction sites. The polarizing array is disposed on the first substrate, and includes first sub-polarizing units having a first polarizing angle and second sub-polarizing units having a second polarizing angle. The first polarizing angle is different from the second polarizing angle. The reaction sites are disposed on the polarizing array. Each of the reaction sites corresponds to one of the first sub-polarizing units or one of the second sub-polarizing units.

IPC Classes  ?

• B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glasswareDroppers
• G01N 21/64 - FluorescencePhosphorescence

Abstract

An image sensing device is provided. The image sensing device includes: a micro lens, a first optical layer, a second optical layer, and an anti-reflection layer. The first optical layer is formed on the micro lens. The second optical layer is formed on the first optical layer. An interface is formed between the first optical layer and the second optical layer, and the interface is beveled. The anti-reflection layer is formed on the second optical layer.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A semiconductor device is provided. The semiconductor device includes a substrate having a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements. The semiconductor device also includes a light-adjusting structure disposed on the substrate. The light-adjusting structure includes a patterned multi-film having a plurality of trenches that correspond to the first photoelectric conversion elements. The first photoelectric conversion elements are used for sensing near infrared light, and the second photoelectric conversion elements are used for sensing visible light.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a modulation layer disposed above the photoelectric conversion elements, and the modulation layer has a plurality of modulation segments. The modulation layer includes a plurality of first sub-layers and a plurality of second sub-layers having different refractive indexes. From the top view of the modulation layer, the modulation segments form a first group and a second group, and the second group is adjacent to the first group. The arrangement of the first sub-layers and the second sub-layers in the first group is different from the arrangement of the first sub-layers and the second sub-layers in the second group.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A sensor device is provided. The sensor device includes a first substrate, a second substrate, a flow channel and a first reaction group. The second substrate is disposed opposite the first substrate. The flow channel is disposed between the first substrate and the second substrate, and the flow channel includes a fluidic boundary. The first reaction group is disposed on the first substrate and includes a first reaction site, a second reaction site and a third reaction site. The first reaction site is closer to the fluidic boundary than the second reaction site, and a size of the first reaction site is greater than or equal to a size of the second reaction site. The second reaction site is closer to the fluidic boundary than the third reaction site, and the size of the second reaction site is greater than a size of the third reaction site.

IPC Classes  ?

• G01N 27/327 - Biochemical electrodes
• B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glasswareDroppers
• G01N 27/447 - Systems using electrophoresis

Abstract

A biosensor is provided. The biosensor includes a substrate, a plurality of photodiodes, a polarizing element and a plurality of reaction sites. The plurality of photodiodes are embedded in the substrate. The polarizing element is disposed on the substrate. The plurality of reaction sites are disposed on the polarizing element.

IPC Classes  ?

• G01J 1/04 - Optical or mechanical part
• G01N 21/64 - FluorescencePhosphorescence
• G01J 1/44 - Electric circuits
• G02B 5/30 - Polarising elements

Abstract

A micro light-emitting diode (LED) display panel is provided. The micro LED display panel includes a substrate and a driving layer. The driving layer is disposed on the substrate. The driving layer includes a micro LED and a photo sensor. When the micro LED emits light to a finger of a user, the photo sensor generates a sensing signal.

IPC Classes  ?

• G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
• H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
• H01L 33/52 - Encapsulations
• G06V 40/13 - Sensors therefor

Abstract

An image sensor includes: a substrate; color filter units disposed on the substrate; and a grid structure disposed on the substrate and surrounding each of the color filter units. The grid structure includes: a first partition wall, disposed on the substrate, located between the color filter units; and a second partition wall, disposed directly on the first partition wall, located between the color filter units. A top width of the second partition wall is smaller than a bottom width of the second partition wall.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

An optical structure is provided. The optical structure includes an optical element and a plurality of protrusions. The optical element has a planarized top surface. The plurality of protrusions are disposed on the planarized top surface, wherein each of the plurality of protrusions independently has a size in the subwavelength dimensions.

IPC Classes  ?

• G06V 40/13 - Sensors therefor
• B29D 11/00 - Producing optical elements, e.g. lenses or prisms
• H01L 27/146 - Imager structures
• G02B 5/18 - Diffracting gratings
• G02B 19/00 - Condensers

Abstract

A semiconductor device is provided. The semiconductor device includes a substrate having a photoelectric conversion element, a first light-shielding layer disposed on the substrate and having a first aperture, a light-transmitting layer disposed on the first light-shielding layer, at least one second light-shielding layer disposed in the light-transmitting layer and having a second aperture, and a light-condensing structure disposed on the light-transmitting layer. The orthogonal projection of the second aperture on the bottom surface of the substrate has a long axis of symmetry and a short axis of symmetry perpendicular to the long axis of symmetry.

IPC Classes  ?

• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• H01L 31/0216 - Coatings
• H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details

Abstract

A solid-state imaging device having a first area and a second area surrounding the first area is provided. The solid-state imaging device includes a substrate having a plurality of photoelectric conversion elements. The solid-state imaging device also includes a color filter layer disposed on the substrate. The color filter layer includes a plurality of color filter segments corresponding to the plurality of photoelectric conversion elements. The solid-state imaging device further includes an optical waveguide layer over the color filter layer. The optical waveguide layer includes a waveguide partition grid, a waveguide material in spaces of the waveguide partition grid, and an anti-reflection film on the waveguide partition grid and the waveguide material. The width of the top of the waveguide partition grid is larger than the width of the bottom of the waveguide partition grid.

IPC Classes  ?

• H01L 27/146 - Imager structures
• G02B 5/20 - Filters
• G02B 7/28 - Systems for automatic generation of focusing signals
• G02B 1/11 - Anti-reflection coatings

Abstract

An aspect of the present invention provides an optical imaging device including a first detecting unit. The first detecting unit includes a plurality of first pixels, a first opaque layer and at least one first micro-lens. The plurality of first pixels respectively has a plurality of first optoelectronic elements. The first opaque layer has at least one opening and is disposed over the plurality of first optoelectronic elements. The at least one first micro-lens is disposed over the first opaque layer, and overlaps at least one of the plurality of first pixels.

IPC Classes  ?

• G06V 40/13 - Sensors therefor
• G06V 10/147 - Details of sensors, e.g. sensor lenses
• H01L 27/146 - Imager structures

Abstract

An optical device includes a first region and a second region surrounding the first region. The optical device includes a substrate. The optical device also includes a first meta-structure disposed on the substrate and has a plurality of first peripheral pillars in the second region. The optical device further includes a second meta-structure disposed on the substrate and has a plurality of second peripheral pillars corresponding to the plurality of first peripheral pillars. Each of the second peripheral pillars has a first shifting distance with respect to a corresponding first peripheral pillar in the direction extending from the center of the optical device to the edge of the optical device.

IPC Classes  ?

• G02B 1/00 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements
• G02B 1/14 - Protective coatings, e.g. hard coatings
• G02B 3/08 - Simple or compound lenses with non-spherical faces with discontinuous faces, e.g. Fresnel lens
• G02B 3/00 - Simple or compound lenses

Abstract

An optical device includes a first conductive layer, a first junction layer, a light absorption layer, a second junction layer, and a second conductive layer. The first junction layer is disposed on the first conductive layer. The light absorption layer is disposed on the first junction layer, wherein the light absorption layer includes a plurality of unit cells, each of the unit cells includes a plurality of pillar structures, and the pillar structures of each of the unit cells are different sizes. The second junction layer is disposed on the light absorption layer. The second conductive layer is disposed on the second junction layer.

IPC Classes  ?

• H01L 27/146 - Imager structures
• H01L 31/0224 - Electrodes
• H01L 31/0376 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
• H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
• H01L 27/144 - Devices controlled by radiation
• H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy

Abstract

A solid-state image sensor is provided. The solid-state image sensor includes a plurality of photoelectric conversion elements. The solid-state image sensor also includes a first color filter layer disposed above the photoelectric conversion elements and having a plurality of first color filter segments. The solid-state image sensor further includes a second color filter layer disposed adjacent to the first color filter layer and having a plurality of second color filter segments. The solid-state image sensor includes a first grid structure disposed between the first color filter layer and the second color filter layer. The first grid structure has a first grid height. The solid-state image sensor also includes a second grid structure disposed between the first color filter segments and between the second color filter segments. The second grid structure has a second grid height that is lower than or equal to the first grid height.

IPC Classes  ?

• H01L 27/146 - Imager structures

Abstract

A method for forming a micro-lens array is provided. According to the method, a substrate is provided, and a hard-mask layer is formed. A lithography process is performed on the hard-mask layer by a hard-mask to form a first pattern and a second pattern. Then, the first pattern and the second pattern are reflowed to form a first lens structure and a second lens structure respectively. The photomask includes a first pattern segment and a second pattern segment, and the second pattern segment includes a transparent region and an opaque region. An area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.

IPC Classes  ?

• G03B 3/00 - Focusing arrangements of general interest for cameras, projectors or printers
• G02B 3/00 - Simple or compound lenses
• G03F 1/50 - Mask blanks not covered by groups Preparation thereof
• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
• H01L 27/142 - Energy conversion devices
• H01L 27/146 - Imager structures

Abstract

An optical communication device includes a plurality of laser sources, a plurality of first meta-lenses, and an optical fiber. The laser sources transmit a plurality of laser beams in the same direction according to electrical signals. The laser beams have different wavelengths. The first meta-lenses receive the laser beams, and in a first substrate, refract the laser beams to a focal point to generate a mixed laser beam. The optical fiber receives the mixed laser beam for transmission. The focal point is arranged at the input end of the optical fiber.

IPC Classes  ?

• H04B 10/04 - Transmitters
• H04B 10/50 - Transmitters
• H04B 10/572 - Wavelength control
• G02B 6/42 - Coupling light guides with opto-electronic elements
• G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for

Abstract

An optical device is provided. The optical device includes a substrate, a central color filter, a first color filter and a second color filter sequentially disposed on the substrate from the center to the edge of the substrate, and a central hollow member, a first hollow member and a second hollow member respectively disposed on the central color filter, the first color filter and the second color filter. There is no distance between a center of the central color filter and a center of the central hollow member. There is a first distance between a center of the first color filter and a center of the first hollow member. There is a second distance between a center of the second color filter and a center of the second hollow member. The first distance is greater than zero. The second distance is greater than the first distance.

IPC Classes  ?

• G02B 26/00 - Optical devices or arrangements for the control of light using movable or deformable optical elements
• G02B 5/20 - Filters
• G02B 5/28 - Interference filters
• G02B 7/00 - Mountings, adjusting means, or light-tight connections, for optical elements

Abstract

An optical fingerprint sensor is provided. The optical fingerprint sensor includes a substrate, a plurality of light-shielding layers and a plurality of groups of microlenses. The substrate has a plurality of photoelectric conversion units disposed therein. The light-shielding layers are sequentially disposed on the substrate. Each light-shielding layer includes a plurality of apertures formed therein. Each group of microlenses is disposed above the apertures formed in an uppermost light-shielding layer and overlies one photoelectric conversion unit.

IPC Classes  ?

• G06V 40/13 - Sensors therefor
• H01L 27/146 - Imager structures
• G06V 40/12 - Fingerprints or palmprints