Abstract

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

IPC Classes  ?

• C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
• C30B 29/06 - Silicon
• C30B 15/20 - Controlling or regulating
• C30B 15/32 - Seed holders, e.g. chucks
• C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
• B64G 1/58 - Thermal protection, e.g. heat shields
• B64G 1/64 - Systems for coupling or separating cosmonautic vehicles or parts thereof, e.g. docking arrangements
• B66D 1/12 - Driving gear incorporating electric motors
• G01S 11/02 - Systems for determining distance or velocity not using reflection or reradiation using radio waves
• G01S 19/13 - Receivers
• B64G 1/10 - Artificial satellitesSystems of such satellitesInterplanetary vehicles
• G01P 15/18 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration in two or more dimensions

Abstract

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

IPC Classes  ?

• C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
• C30B 29/06 - Silicon
• C30B 15/20 - Controlling or regulating
• C30B 15/32 - Seed holders, e.g. chucks
• C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
• C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
• B64G 1/58 - Thermal protection, e.g. heat shields
• B64G 1/64 - Systems for coupling or separating cosmonautic vehicles or parts thereof, e.g. docking arrangements
• B66D 1/12 - Driving gear incorporating electric motors
• G01S 11/02 - Systems for determining distance or velocity not using reflection or reradiation using radio waves
• G01S 19/13 - Receivers
• B64G 1/10 - Artificial satellitesSystems of such satellitesInterplanetary vehicles
• G01P 15/18 - Measuring accelerationMeasuring decelerationMeasuring shock, i.e. sudden change of acceleration in two or more dimensions

Abstract

A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.

IPC Classes  ?

• C30B 15/02 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
• C30B 29/06 - Silicon