NANTONG TIANSHENG NEW ENERGY TECHNOLOGY CO., LTD. (China)
Inventor
Mao, Ping
Zheng, Jinhua
Abstract
A glass powder for N-type silver-aluminum paste comprises a lead-containing compound, a silicon-containing compound, a thallium-containing compound and a zinc-containing compound, wherein the compounding of the thallium-containing compound and the lead-containing compound confers good silver melting capability on the glass powder, and the prepared silver-aluminum paste has good wettability to the surface of a solar cell silicon wafer; the silicon-containing compound provides a more complete network structure for the glass powder; and the zinc-containing compound reduces the softening temperature of the glass powder and further reduces the sintering temperature of the prepared N-type silver-aluminum paste; further comprises a compound containing a first main group metal element, and the compound can react with a zinc-containing compound to further reduce the softening temperature of the glass powder, further reduce the sintering temperature of the prepared N-type silver-aluminum paste and improve the preparation yield of the N-type solar cell.
C03C 8/18 - Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill additions containing free metals
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
Ink for leather; printers' paste inks; printing ink; aluminium paints; chemical silver paste used in the manufacture of solar cells and printed circuits; anti-corrosive preparations, namely, anti-corrosive waxes; chemical silvering powders used in the manufacture of solar cells and printed circuits
4.
High-tension busbar silver paste applied to N-type solar cell and preparation method therefor
A high-tension busbar silver paste applied to the N-type solar cell is prepared by mixing a silver powder (a mixture of a spherical silver powder A having a median particle size of 700-900 nm and a tapped density of 5-6 g/mL and a spherical silver powder B having a medium particle size of 280-450 nm and a tapped density of 4-5 g/mL), an organic vehicle (a mixture of 3-5 wt % of polyvinyl butyral resin and 5-10 wt % of acrylic resin as a main resin) and a glass powder (copper-bismuth-manganese-tellurium series glass powder having a medium particle size of 0.7-1 μm and a softening temperature of 600-800° C.); the silver paste has large welding tension, in which the welding tension of the front busbar line is 4 N or more.
A glass powder is a glass powder comprising vanadium-tellurium-silver, which has a softening temperature of 230-330° C. and a median particle size of 1-2 μm; when the glass powder is applied to the silver paste, the requirement that the silver paste is sintered at the temperature of 230-400° C. can be met, and a firm three-dimensional network structure can be formed in the glass system after the silver paste is sintered, and the welding tension of a front silver electrode can be improved; the addition of other metal elements to the glass powder can enable the network structure of the glass powder to be more compact and complete and ensure the stability of the glass powder; the prepared silver paste can be sintered at a temperature of 230-400° C.
The present invention relates to a glass powder and a silver-aluminum paste for use on a front of an N-type double-sided solar cell comprising a conductive silver powder, a silicon-aluminum alloy powder, the glass powder and an organic vehicle. The glass powder comprises the following components by weight: 0-50% of PbO, 0-50% of BiO, 5-15% of B2O3, 8-9% of SiO2, 2-3% of Al2O3 and 5-15% of ZnO; silicon and aluminum in the glass powder have a mass ratio of 4:1-5:1; the conductive silver powder has a content of 80-90 wt %; the conductive silver powder comprises a nano-silver powder and a silver alloy powder, and the nano-silver powder to the silver alloy powder have a mass ratio of 1:18-1:90.
+ doped region and a front surface passivation anti-reflection coating on a front surface of the N-type crystalline silicon substrate in an inside-out sequence, printing an aluminum paste on the front surface passivation anti-reflection coating to form a first finger, overprinting a silver paste on the first finger to form a second finger, and printing a front silver paste on the first finger to form a busbar. In the present invention, the superposition of the second finger on the first finger can reduce line resistance while ensuring a good ohmic contact, which further improves the photoelectric conversion efficiency of solar cells. Moreover, since no grooving procedure is required, the process is simplified and cost-efficient.
Based on 100 wt % of the alloy aluminum paste, the alloy aluminum paste includes the following components in percentages by weight: 35-56.5% of an aluminum-silicon alloy powder, 17.5-37.5% of an aluminum powder, 1-2% of a lead-free glass powder, 15-20% of an organic solvent, 3-5% of ethyl cellulose, 0.05-0.1% of a thixotropic agent and 0.5-1.5% of a dispersant. The alloy paste can be applied to a PERC solar cell having a passivation coating opening consisting of 0.5-1% of the area of the solar cell. When the alloy aluminum paste is applied to a PERC solar cell having a low opening rate, particularly a rear electrode having a passivation coating opening consisting of 0.5-1% of the area of the solar cell.
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
A low temperature-sintering rear silver paste for an all-aluminum back surface field crystalline silicon solar cell includes the following components in part by mass: 50-70 parts of a nano-silver powder, 20-50 parts of an organic vehicle, 0.1-0.3 parts of a dispersant and 0.1-0.3 parts of a thixotropic agent. The nano-silver powder adopted in the present invention has good sintering activity, and thus is suitable for sintering at low temperature. In addition, part of the silver paste will permeate into a rear aluminum paste in the process of sintering to form good silver-aluminum contact.
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
A method for preparing a P-type crystalline silicon rear electrode, comprising: printing an all-aluminum paste on a P-type crystalline silicon rear passivation layer, then printing a linear interlayer-glass paste on the all-aluminum paste, and finally overprinting rear silver electrodes on the linear middle layer-glass paste. In a solar cell prepared using the method, good contact with silver and aluminum is kept without causing damage to the passivation layer and compromising the conductivity. In the present invention, a complete all-aluminum back surface field can be formed, leading to an improved field passivation property of an electrode region and reduced carrier recombination.
NANTONG TIANSHENG NEW ENERGY TECHNOLOGY CO., LTD (China)
Inventor
Mao, Ping
Zheng, Jinhua
Abstract
Glass powder for N-type aluminum silver paste and a preparation method for the glass powder. The glass powder comprises a lead-containing compound, a silicon-containing compound, a thallium-containing compound, and a zinc-containing compound, wherein the thallium-containing compound and the lead-containing compound are used together, so that the glass powder has good silver-melting capacity, and the prepared aluminum silver paste has good wettability to the surface of a solar cell silicon wafer; the silicon-containing compound is capable of providing a more complete network structure for the glass powder, and the zinc-containing compound is capable of decreasing a softening temperature of the glass powder, so that a sintering temperature of the prepared N-type aluminum silver paste is further decreased. The glass powder further contains a compound containing a first main group of metal elements, and the compound can react with the zinc-containing compound so as to further decrease the softening temperature of the glass powder, so that the sintering temperature of the prepared N-type aluminum silver paste is further decreased, and a preparation yield of an N-type solar cell is increased.
C03C 8/24 - Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metalGlass solders
12.
MAIN GATE HIGH-TENSION SILVER PASTE FOR N-TYPE SOLAR CELL AND MANUFACTURING METHOD THEREFOR
A main gate high-tension silver paste for N-type solar cells and a manufacturing method therefor. The main gate high-tension silver paste for N-type solar cells is prepared by mixing a silver powder (a mixture of a spherical silver powder A having a median size of 700-900nm and a tap density of 5-6g/mL and a spherical silver powder B having a median size of 280-450nm and a tap density of 4-5g/mL), an organic carrier (using a mixture of 3-5wt% of polyvinyl butyral resin and 5-10wt% of acrylic resin as main resin) and a glass powder (a copper-bismuth-manganese-bismuth-based glass powder having a median size of 0.7-1μm and a softening temperature of 600-800℃). The formula system enables the silver paste to have a good surface adhesion after firing and on the surface of a N-type silicon wafer, increases the bonding tension of the silver paste, and allows the bonding tension of front main gate lines to be greater than 4N; and the paste itself has good densification and high photo-electric conversion efficiency.
A glass powder and a preparation method therefor, and a silver paste containing said glass powder. The glass powder is glass powder containing vanadium-tellurium-silver, the softening temperature thereof being 230-330°C, and the median particle size being 1-2 μm; the glass powder is used in a silver paste, enabling the silver paste to be sintered at a temperature of 230-400°C whilst ensuring that the glass system forms a robust three-dimensional network structure after the silver paste is sintered, improving the welding tension of a silver electrode; the other metal elements are added to the glass powder so that the network structure of the glass powder is more dense and complete and the stability of the glass powder is ensured. In the silver paste containing the glass powder, nano silver powder with uniform particle size, narrow particle size distribution range, good dispersibility, and excellent electrical conductivity is selected, the prepared silver paste can be sintered at a temperature of 230-400°C, and the photoelectric conversion efficiency of solar cells can be greatly improved without excessively damaging the cell.
A preparation method for a solar cell back electrode and an application thereof are provided. The method comprises setting a back electrode barrier layer and using back-side silver paste in coordination. The back electrode barrier layer comprises the following components: 20 to 80 parts by weight of metal nitride powder, nitrogen-silicon compound powder, oxide powder or low-melting-point metal powder in total; 0.5 to 5 parts by weight of lead-free glass powder; 10 to 40 parts by weight of organic carrier; and 0.1 to 1 part by weight of organic additives. The back-side silver paste comprises the following components: 5 to 60 parts by weight of hollow spherical silver powder; 5 to 30 parts by weight of flaky silver powder; 0.5 to 5 parts by weight of lead-free glass powder; 10 to 50 part by weight of organic binder; and 0.1 to 1 part by weight of organic additives.
The present invention discloses a full-area aluminum back surface field back-side silver paste and a preparation method and application thereof. The full-area aluminum back surface field back-side silver paste comprises: 10 to 80 parts by weight of silver powder with purity higher than 99.99% under special requirements; 0.5 to 5 parts by weight of homemade lead-free main glass powder; 0 to 3 parts by weight of low-melting-point auxiliary glass powder; 1 to 50 parts by weight of low-melting-point metal powder under special requirements; 15 to 50 parts by weight of organic binder; and 0.01 to 1 part by weight of organic additives.
Disclosed is a method for fabricating a P-type crystalline silicon back electrode, the method for fabricating the back electrode being: printing an all-aluminum paste on a back passivation layer of P-type crystalline silicon, then printing a linear intermediate layer–glass paste on the aluminum paste, and finally overprinting a back silver electrode on the linear intermediate layer–glass paste; in the solar cell prepared by the present method, it is possible, while not destroying the passivation layer, to maintain good contact with the silver and aluminum and not affect conductivity; the present invention can form a complete all-aluminum back field and improve the field passivation characteristics of the electrode region, such that carrier coincidence is reduced, no silver enters the silicon matrix, there is no leakage, battery leakage current is reduced, and photoelectric conversion efficiency is increased.
Disclosed by the present invention is an alloy aluminum paste used for a back surface of a PERC solar cell. By using the weight of the alloy aluminum paste as 100%, the alloy silver paste comprises and is prepared by the following components by weight percentage: 35 to 56.5% of aluminum silicon alloy powder, 17.5 to 37.5% of aluminum powder, 1 to 2% of lead-free glass powder, 15 to 20% of an organic solvent, 3 to 5% of ethyl cellulose, 0.05 to 0.1% of a thixotropic agent and 0.5 to 1.5% of a dispersant. The alloy paste is applied to PERC solar cells in which the total area of a passivation film opening accounts for 0.5 to 1% of the area of the solar cell. The aluminum alloy paste is used for PERC solar cells having a low aperture ratio, especially back surface electrodes in which the total area of a passivation film opening accounts for 0.5 to 1% of the area of the solar cell. The void filling rate of said paste is good, and a formed BSF layer is complete and uniform. Moreover, aluminum beads are reduced, and both boiling performance and adhesion are improved.
Disclosed is a low-temperature sintered back-surface silver paste for an all-aluminum back-surface-field crystalline silicon solar cell. The silver paste mainly comprises the following in parts by mass: 50-70 parts of a nanometer silver powder, 20-50 parts of an organic carrier, 0.1-0.3 parts of a dispersing agent and 0.1-0.3 parts of a thixotropic agent. The nanometer silver powder used in the present invention has a good sintering activity and is easy to sinter at a low temperature, and, during a sintering process, some of the silver paste can seep into an aluminum paste on a back surface to form better silver-aluminum contact. A back electrode prepared by the low-temperature sintered silver paste prepared in the present invention can form a complete BSF layer, improve the field passivation characteristics of an electrode region, decrease the recombination of carriers, and prevent the leakage of silver into a silicon substrate; and electric leakage does not occur, a leakage current of a cell is decreased, and the photovoltaic conversion efficiency is increased. Compared with a conventional back electrode, the electrode width of same and the cost may be reduced without the need to consider overprinting.
A metallization method for a front electrode of an N-type solar cell. The metallization method comprises: treating an N-type crystal silicon substrate; forming a P + doped region and a front surface passivation antireflection coating on the front surface of the N-type crystal silicon substrate in sequence from inside to outside; printing aluminum paste on the front surface passivation antireflection coating to form first finger grids; superimposing silver paste on the first finger grids to form second finger grids; and printing front silver paste on the first finger grids to form busbars. The superimposition of the second finger grids on the first finger grids can reduce line resistance and further improve the photoelectric conversion rate of solar cells while ensuring good ohmic contact. Moreover, no slotting process is needed, the process is simple, and the process cost is reduced.
23223xx, and does not cause relatively strong metallized composition, the silver aluminum paste prepared by the glass powder solves the problem of the contradiction between contact resistance and open circuit voltage when the silver aluminum paste is printed on the front side of an N-type crystalline silicon solar cell.
Disclosed is a double-sided power generation solar cell, comprising: a silicon substrate; N emitter electrodes, a front anti-reflection passivation film, and front electrodes that are provided on the front surface of the silicon substrate from bottom to top; and a back passivation film, back electric fields, and back electrodes that are provided on the back surface of the silicon substrate from top to bottom. The solar cell is a double-sided solar cell. The back electric fields are local aluminum back electric fields. The local aluminum back electric fields are linearly slotted by etching the back passivation film using an inorganic etching paste, and then the slot is covered with aluminum paste having a high conductivity. The solar cell has a BSF layer of 2-5 μm. The back electric field structure of the solar cell of the present invention can increase the thickness of the BSF layer, so that the damage to the silicon substrate is reduced, and the consumption of aluminum paste is reduced, thereby increasing the photoelectric conversion rate.
Disclosed are a low-temperature conductive silver paste for an HIT solar cell and a preparation method therefor. The low-temperature conductive silver paste for a HIT solar cell of the present invention is prepared from the following components in parts by mass: 27-46 parts of a flaked silver powder; 46-65 parts of a spherical silver powder; 1.5-3.5 parts of a thermosetting resin; 0.5-1.5 parts of a reactive diluent; 2-4 parts of an organic solvent; 0.65-0.75 parts of a curing agent; 0.05-0.15 parts of an imidazole curing accelerator; 0.35-0.45 parts of a dispersant; 0.01-0.6 parts of a thixotropic agent; 0-2.4 parts of an epoxy toughening agent; and 0.5-1.5 parts of an ionomer, for 100 parts in total. The low-temperature conductive silver paste of the present invention prepared using the formula can form a bond with a substrate, and has good wettability on the substrate, thus increasing the fill factor of a solar cell, thereby improving the photoelectric conversion efficiency of the solar cell.
232xy23233 and ZnO. The glass powder is obtained by firstly subjecting the raw materials to a drying process; then smelting same following a predetermined procedure, wherein the predetermined procedure comprises a temperature-elevating stage and a temperature-holding stage, the temperature of the temperature-holding stage is set at 950ºC-1050ºC and the duration of the temperature-holding stage is set as 1-2 h; and then subjecting same to cooling, crushing and sieving.
Provided is slurry for a PERC cell and a method for preparing said slurry, the slurry comprising a conductive phase, a glass phase, and an organic binder, the conductive phase comprising an aluminum powder and an aluminum alloy powder; the glass phase comprising a glass powder and an auxiliary glass powder, the softening temperature of the auxiliary glass powder being higher than the softening temperature of the glass powder. The slurry comprises 65-73 parts by mass of the aluminum powder, 3-10 parts by mass of the aluminum alloy powder, 1.8-2.2 parts by mass of the glass powder, 0.3-0.5 parts by mass of the auxiliary glass powder, and 15-40 parts by mass of the organic binder. The slurry is prepared by mixing said aluminum powder, aluminum alloy powder, glass powder, auxiliary glass powder, and organic binder and grinding and dispersing same, and the fineness of the slurry is no more than 15μm. The slurry is suitable for a back metallization process of a PERC cell, and simplifies a production process of a PERC cell; the slurry can burn through a passivation film to form a stable aluminum-silicon contact, effectively controlling back surface recombination, providing a wide process adjustment window and stable performance.
A preparation method for the back electrode of a solar cell and an application. The method comprises two parts: setting of a back electrode barrier layer and use of back silver paste in coordination. The back electrode barrier layer comprises the following components in parts by weight: 20-80 parts of metal nitride powder, nitrogen and silicon compound powder, oxide powder, or low-melting-point metal powder, 0.5-5 parts of lead-free glass powder, 10-40 parts of organic binder, and 0.1-1 part of organic assistant. The back silver paste comprises the following components in parts by weight: 5-60 parts of hollow spherical silver powder, 5-30 parts of flake silver powder, 0.5-5 parts of lead-free glass powder, 10-50 parts of organic binder, and 0.1-1 part of organic assistant.
Disclosed are an all-aluminum back-field back silver paste and a preparation method therefor and the use thereof. The all-aluminum back-field back silver paste comprises the following components in parts by weight: 10-80 parts of a silver powder with a special requirement and a purity of greater than 99.99%, 0.5-5 parts of a house-made and lead-free main body glass powder, 0-3 parts of an auxiliary glass powder with a low melting point, 1-50 parts of a metal powder with a special requirement and a low melting point, 15-50 parts of an organic binder, and 0.01-1 part of an organic auxiliary agent. The all-aluminum back-field back silver paste can be directly printed onto an aluminum back field paste, thereby making sure that the aluminum back field paste has a considerable welding tension and aging tension, and avoiding the problem of serious electric leakages caused by metal defects created by the direct contact between silver and a silicon wafer, thus improving the photoelectric conversion efficiency of a crystalline silicon battery, and the width of a back electrode and the printed pattern can be freely adjusted, thus reducing the cost of a back electrode paste.
An efficient back surface field paste for used crystalline silicon solar cells and its preparation method include Paste A and Paste B. Paste A comprises by weight: 50-60% aluminum powder, 2-6% inorganic binder, 10-20% organic binder, 16-26% organic solvent and 2-8% additives, and the sum of weight percentages of each component is 100%. Paste B comprises by weight: 85-90% aluminum powder, 0.1-1% inorganic binder, 1-5% organic binder, 2-8% organic solvent and 1-3% additives, and the sum of weight percentages of each component is 100%.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
28.
Highly filled back surface field aluminum paste for point contacts in PERC cells and preparation method thereof
A highly filled back surface field aluminum paste for point contacts in PERC cells and its preparation method include dissolving ethyl cellulose in organic solvent, stirring under a certain temperature to prepare a homogeneous and transparent organic carrier, adding aluminum powder, nanosized aluminum-boron-antimony alloy powder and auxiliary additive, and three-roller grinding, comprising 70-85 parts by weight of aluminum powder, 1-5 parts by weight of nanosized aluminum-boron-antimony alloy powder, 10-25 parts by weight of organic carrier, 0.1-6 parts by weight of inorganic binder and 0.01-1 part by weight of auxiliary additive.
The present invention discloses a low-warpage backside aluminum paste used for crystalline silicon solar cells, comprising 85-95 parts by weight of aluminum powder, 0.1-0.5 part by weight of glass powder, 4-13 parts by weight of organic carrier and 0.6-2 parts by weight of additive. The thermal expansion coefficient of the aluminum pastes is effectively reduced by the use of glass powders with larger particle sizes. In addition, high content of aluminum powder in the paste formula results in a reduced printing wet weight, a high aluminum content in the back surface electric field, and thus, a reduced solar cell warpage without detriment to the performance of the solar cells.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
30.
High efficiency local back electrode aluminum paste for crystalline silicon solar cells and its application in PERC cells
A high-efficiency back electrode local aluminum paste crystalline silicon solar cell is composed of the following components proportioned to weights: 70-85 of parts powder, 1-30 parts of organic carrier, 0.1-10 parts of inorganic binder, 0.1-1 parts of auxiliary conductive additives. The aluminum paste is mainly used to manufacture the passivated emitter and back electrode of silicon solar cell with dot or linear contact on rear surface. PERC aluminum paste printed on the passivated film of the silicon wafer with dot-opening or linear-opening is dried and sintered.
A back surface field aluminum paste for point contacts of efficient bifacial crystalline silicon solar cells and its preparation method is disclosed. The aluminum paste, which is used to cover the notched area in the back surface of a bifacial passivated solar cell, and not to cover the entire area covered by a back surface passivation film, comprises 85-95 parts by weight of aluminum powder, 10-15 parts by weight of organic carrier and 0.1-6 parts by weight of inorganic binder. The organic carrier includes thickening agent, thixotropic agent, dispersing agent and solvent. Sintered aluminum gate lines have a certain height to width ratio.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
H01B 1/20 - Conductive material dispersed in non-conductive organic material
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
The invention discloses an aging resistant backside silver paste used for the crystalline silicon solar cells and a preparation method thereof. The paste comprises 40-50 parts by weight of silver powder, 1-10 parts by weight of nanosized copper powder, 2-10 parts by weight of lead-free glass powder, 35-55 parts by weight of organic binder, 1-5 parts by weight of other additives. The preparation method comprises the following steps: preparation of an organic binder; preparation of lead-free glass powder and preparation of an aging resistant backside silver paste. Application of the aging resistant backside silver paste used for crystalline silicon solar cells prepared in the invention may results in a dense electrode conductive layer, excellent welding properties and a distinct advantage in aging resistance.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
A solar cell front side silver paste doped with modified graphene and its preparation method are disclosed. The solar cell front side silver paste doped with modified graphene comprises by weight 0.1-5 parts of modified graphene, 88-91 parts of silver powder, 5-15 parts of organic binder, 1-5 parts of organic solvent, 1-3 parts of glass powder, wherein the modified graphene is a surface modified graphene. A solar cell front side silver paste is developed, which is screen printed on a crystalline silicon wafer, sintered at a high temperature, penetrates the SiNx passivation layer in the crystalline silicon wafer, and thus forms a good ohmic contact.
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 1/24 - Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon, or silicon
H01B 1/18 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising carbon-silicon compounds, carbon, or silicon
Provided are a back surface field paste for a high efficiency crystalline silicon solar cell and a preparation method thereof. An aluminum paste comprises: a paste A and a paste B. The paste A comprises: 50-60% of an aluminum powder; 2-6% of an inorganic binder; 10-20% of an organic binder; 16-26% of an organic solvent; and 2-8% of an additive. The weight percentages of all components in the paste A totals 100%. The paste B comprises: 85-95% of an aluminum powder; 0.1-1.0% of an inorganic binder; 1-5% of an organic binder; 2-8% of an organic solvent; and 1-3% of an additive. The weight percentages of all components in the paste B totals 100%. The prepared aluminum paste is applicable to traditional monocrystalline silicon solar cells with aluminum back surface fields. By increasing an activity of a paste to increase the thickness of a BSF layer and enhancing passivation of an aluminum film, a back surface recombination rate can be reduced more effectively, increasing a minority carrier collection rate, thereby increasing an open-circuit voltage, and increasing an anti-reflection effect.
Provided are an aluminum paste with a high filling rate for a local back surface field of a PERC cell and a preparation method and a use thereof. The aluminum paste with a high filling rate for a local back surface field is formed by dissolving ethyl cellulose in an organic solvent, stirring the same at a given temperature to obtain a transparent organic carrier to be used later, adding components such as an aluminum powder and an alloy nanopowder comprising aluminum, boron and antimony, and performing grinding by means of three separated rollers. The paste comprises the following components in parts by weight: 70-85 parts of an aluminum powder; 1-5 parts of an alloy nanopowder comprising aluminum, boron and antimony; 10-25 parts of an organic carrier; 0.1-6 parts of an inorganic binder; and 0.01-1 parts of an auxiliary additive. The aluminum paste is used in manufacturing a back surface field electrode of a passivated emitter rear point or line contact silicon solar cell. The PERC aluminum paste is printed onto a passivated layer of a silicon wafer having an open point or an open line. The paste has a smooth surface, can securely attach to an aluminum film without damaging the aluminum film, and has a filling rate of up to 90%.
Disclosed are a local contact back surface field aluminum paste for a high-efficiency double-sided crystalline silicon solar cell and a preparation method thereof. The aluminum paste is mainly used to cover grooved portions of a two-side passivated cell or grooved portions on the back side of a back surface passivated cell while not covering the entire area covered by a back-surface passivation film, and consists of the following components, in parts by weight: 85-95 parts of aluminum powder, 10-15 parts of organic carriers and 0.1-6 parts of inorganic binder. The organic carriers comprise thickening agent, thixotropic agent, and dispersant, with the balance being the solvent, such that the paste has good printability and sintered aluminum gate lines have specific height-width ratio. In addition, by adding a mixed inorganic binder into the aluminum paste, an aluminum layer can be in good ohmic contact with a silicon substrate at local contacts. The present invention increases sunlight absorption of a cell, increases red light response, can effectively reduce carrier recombination on a back surface, and overall can greatly improve the photoelectric conversion efficiency of a cell.
A low-warpage back surface aluminum paste for a crystalline silicon solar cell. The paste is prepared from the following materials in parts by mass: 85-95 parts of aluminum powder, 0.1-0.5 parts of glass powder, 4-13 parts of organic carrier and 0.6-2 parts of additive. The glass powder with large particle sizes is used for effectively lowering the coefficient of expansion of the aluminum paste. In addition, as the content of the aluminum powder in the paste formulation is high, the content of aluminum in a back surface field is thus guaranteed while the printing wet weight of the aluminum paste is reduced, thereby achieving the purpose of reducing warpage of a silicon wafer without impairing the cell performance.
The present invention discloses a high-efficiency crystalline silicon solar cell local back surface field aluminium slurry and an application thereof in a PERC. The high-efficiency crystalline silicon solar cell local back surface field aluminium slurry consists of following components in parts by weight: 70-85 parts of an aluminium powder, 1-30 parts of an organic carrier, 0.1-10 parts of an inorganic binder, and 0.1-1 parts of an auxiliary conductive additive. The aluminium slurry is mainly used for the manufacturing of a passivated emitter electrode and a back surface field electrode of a back point contact silicon solar cell or a back line contact silicon solar cell, in which the PERC aluminium slurry is printed on a passivation layer of an open point silicon wafer or an open line silicon wafer, dried, and sintered. The slurry of the present invention causes almost no damage to a passivation film, has a uniform and dense BSF layer and a high local filling level. When the product of the present invention is applied to a crystalline silicon open line passivated solar cell, the mass production mean conversion efficiency of the product is greater than or equal to 20.7%.
An anti-aging back silver paste for a crystalline silicon solar cell, and a preparation method therefor. The anti-aging back silver paste for a crystalline silicon solar cell consists of the following components in parts by weight: 40 to 50 parts silver powder, 1 to 10 parts of nano-copper powder, 2 to 10 parts of lead-free glass powder, 35 to 55 parts of organic binder, and 1 to 5 parts of other additives. The preparation method comprises the following steps: preparation of an organic binder, preparation of lead-free glass powder and preparation of an anti-aging back silver paste material. By means of the anti-aging back silver paste for a crystalline silicon solar cell, a formed electrode film layer is compact, welding performance is good, and an anti-aging advantage is provided.
A solar cell front-side silver paste doped with modified graphene, and a preparation method therefor. The solar cell front-side silver paste doped with modified grapheme consists of the following components in parts by weight: 0.1 to 5 parts of modified graphene, 88 to 91 parts of silver powder, 5 to 15 parts of organic binder, 0.1 to 5 parts of organic solvent, and 1 to 3 parts of glass powder, the modified graphene being graphene with surface modification. To lower series resistance of a solar cell, a fast silk screen is developed and is printed on a crystalline silicon, a silicon wafer SiNx passivation layer is penetrated by means of a high-temperature sintering, and accordingly the front-side silver paste having good ohmic contact is formed; thereby reducing the silver and silicon contact resistance and the line resistance, and improving the photoelectric conversion efficiency.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
H01B 1/24 - Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon, or silicon
H01B 1/16 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
H01B 1/18 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising carbon-silicon compounds, carbon, or silicon
41.
All-aluminum back surface field aluminum paste for crystalline silicon solar cell and preparation method thereof
The invention discloses an all-aluminum back surface field aluminum paste for a crystalline silicon solar cell and a preparation method thereof. The all-aluminum back surface field paste mainly comprises 60-70% aluminum powder, 5-10% nanometer metal oily solution, 1-10% inorganic binder, 10-20% organic binder, 5-30% organic solvent and 1-5% accessory ingredient. According to the aluminum paste prepared by the present invention, the back surface preparing process of an all-aluminum back surface field can be implemented preferably; moreover, the paste has great adhesive force, is easy to be better adhered to silver paste printed afterwards; meanwhile, the paste can be in good contact with a silicon chip through the nanometer metal oily solution added into the paste, the aluminum back surface is prevented from falling off, and good ohm contact can be formed, so that the photoelectric conversion efficiency is increased, and the economic benefits of enterprises are increased.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
C09D 11/033 - Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
C09D 11/106 - Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
C03C 8/22 - EnamelsGlazesFusion seal compositions being frit compositions having non-frit additions containing two or more distinct frits having different compositions
C09D 11/037 - Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
C09D 11/10 - Printing inks based on artificial resins
