Abstract

It is possible to improve a uniformity of a substrate processing. There is provided a technique that includes: a process chamber in which a substrate is processed; a process gas supplier capable of supplying a process gas to the process chamber; a heater capable of heating the process chamber; a heat insulating chamber constituting a heat insulating region provided below the process chamber; an inert gas supplier capable of supplying an inert gas to the heat insulating chamber from thereunder; a first exhauster provided with a first exhaust pipe connected to a side surface of the heat insulating chamber vertically between the inert gas supplier and the process chamber; and a second exhauster provided with a second exhaust pipe connected to the process chamber.

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A film forming step of forming a film on a substrate in a process chamber and a modifying step of modifying the film in the process chamber are included, and an exhaust amount discharged from the process chamber in the modifying step is made larger than an exhaust amount discharged from the process chamber in the film forming step.

IPC Classes  ?

• C23C 16/56 - After-treatment
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process

Abstract

According to one aspect of the technique, there is provided a substrate processing apparatus including: a process housing including a process chamber in which a substrate is processed; a transfer housing provided adjacent to the process housing and comprising a transfer chamber wherein the substrate is transferred between the process chamber and the transfer chamber; a microwave generator configured to transmit a microwave to be supplied into the process chamber; a loading/unloading port connecting between the process chamber and the transfer chamber and through which the substrate is transferred; an opening/closing structure configured to open or close the loading/unloading port; and a detection sensor provided in the transfer chamber adjacent to the loading/unloading port and configured to detect the microwave leaking to the transfer chamber from the process chamber through the loading/unloading port while the opening/closing structure maintains the loading/unloading port closed.

IPC Classes  ?

• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H05B 6/68 - Circuits for monitoring or control

Abstract

There is included a substrate processing apparatus including a process container; a gas supply system; and an electrode provided with a section between a first and a second grounding point of the electrode so as to be spirally wound a plurality of times along an outer periphery of the process container, and the electrode supplies high frequency power. A winding diameter of a first winding section, where the electrode winds once and includes the first grounding point, is longer than a winding diameter of another winding section of the electrode, which is between the first and second grounding points and does not includes the first and second winding sections, which is a section where the electrode winds once and includes the second grounding point. The electrode is configured such that the other winding section is not arranged between the first winding section and the outer periphery of the process container.

IPC Classes  ?

• H01J 37/32 - Gas-filled discharge tubes
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

There is provided a technique that includes: forming a film containing a first element, a second element, carbon, and a halogen on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a source containing the first element, carbon, and the halogen and not containing a chemical bond between carbon and hydrogen to the substrate; and (b) supplying a reactant containing the second element different from the first element to the substrate.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process

Abstract

A boat includes a first support for one substrate, a processing container that accommodates the boat and processes the substrate, a gas supplier that supplies a processing gas into the processing container, second supports provided to be relatively movable in a vertical direction with respect to the boat, a rotator including a rotation shaft that supports the boat, a driver that is capable of lifting the second supports relatively upward to float the substrate from the at least one first support, and a controller that is capable of controlling to form a film on the substrate by performing a step a of supplying a gas from the gas supplier while rotating the boat to process the substrate supported by the boat, and a step b of separating the substrate from the first support while maintaining the substrate in the processing container a predetermined number of times.

IPC Classes  ?

• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

Abstract

The present disclosure provides a technique for improving step coverage in film formation. According to one embodiment, there is provided a technique including: (a1) modifying at least a portion of the substrate by supplying a first modifying gas to the substrate; (a2) adsorbing a first element preferentially to a region that is not modified by the first modifying gas, by supplying a first process gas containing the first element to the substrate; (b1) modifying at least a portion of the substrate by supplying a second modifying gas to the substrate, wherein a decomposition temperature of the second modifying gas is different from a decomposition temperature of the first modifying gas; and (b2) adsorbing a second element preferentially to a region that is not modified by the second modifying gas, by supplying a second process gas containing the second element to the substrate.

IPC Classes  ?

• C23C 16/02 - Pretreatment of the material to be coated
• C23C 16/04 - Coating on selected surface areas, e.g. using masks
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

According to the technique of the present disclosure, there is provided a heater comprising a heat generating element divided into at least a central portion and an outer peripheral portion. The heat generating element is configured to be capable of adjusting a heating amount of each of the central portion and the outer peripheral portion. End portions of the outer peripheral portion are not adjacent to outermost turnaround portions of the heat generating element. Further, turnaround portions of the heat generating element are not adjacent to the end portions in a direction outward from a center of the heat generating element in the outer peripheral portion of the heat generating element.

IPC Classes  ?

• C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers

Abstract

There is provided a technique that includes: a process vessel in which a process substrate is capable of being processed; a substrate placement table on which the process substrate is placed; and a controller capable of controlling a cooling process and a cleaning process such that the cooling process of cooling an inner portion of the process vessel is performed with a cooling substrate placed on the substrate placement table when an inner temperature of the process vessel after processing the process substrate is higher than a temperature for the cleaning process of cleaning the inner portion of the process vessel, wherein an outer peripheral length of the cooling substrate is set to be shorter than that of the process substrate, and such that the cleaning process is performed when the inner temperature of the process vessel reaches a temperature at which the cleaning process is possible.

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process

Abstract

There is provided a technique that includes: high-frequency power sources supplying power to plasma generators; and matchers installed between the high-frequency power sources and the plasma generators and matching load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one of the high-frequency power sources includes: a high-frequency oscillator; a directional coupler at a subsequent stage of the high-frequency oscillator, which extracts a part of a traveling wave component from the high-frequency oscillator and a part of a reflected wave component from the matcher; a filter removing a noise signal in the reflected wave component extracted by the directional coupler; and a power monitor measuring the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler and feedback-controlling the matcher to reduce a ratio between the reflected wave component and the traveling wave component.

IPC Classes  ?

• C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H05H 1/46 - Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

According to the present disclosure, it is possible to reduce an amount of impurities contained in a film after the film is etched. There is provided a technique that includes: (a) removing at least a part of a film formed on a substrate by performing a cycle two or more times, wherein the cycle includes: (a1) supplying a first fluorine-containing gas to the substrate; and (a2) supplying a reactive gas containing a predetermined element to the substrate; and (b) supplying a second fluorine-containing gas to the substrate after (a), wherein a first substance containing the predetermined element is generated in (a), and wherein the second fluorine-containing gas is supplied in (b) under conditions in which the first substance is converted into a substance whose vapor pressure is lower than that of the first substance.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01J 37/32 - Gas-filled discharge tubes

Abstract

A method according to the present invention includes: (a) a step for setting the supply amount of a modifier on the basis of a relationship between the supply amount of the modifier and the characteristic of saturated adsorption of a raw material to a substrate; and (b) a step for supplying the modifier to the substrate on the basis of the set supply amount.

IPC Classes  ?

• H01L 21/318 - Inorganic layers composed of nitrides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers

Abstract

Described herein is a technique capable of improving a controllability of a thickness distribution of an oxide film formed on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas to a heated substrate at a first pressure less than an atmospheric pressure and by oxidizing a surface of the substrate; and (b) forming a second oxide layer by supplying the oxygen-containing gas and the hydrogen-containing gas to the heated substrate at a second pressure less than the atmospheric pressure and different from the first pressure and by oxidizing the surface of the substrate on which the first oxide layer is formed.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

There is provided a technique that includes: by using a substrate transfer apparatus including a mounting stage on which a substrate is placed and a gripper capable of gripping the substrate placed on the mounting stage between a first portion and a second portion, moving the substrate placed on the mounting stage toward the first portion by using the second portion that pushes the substrate with a first external force; and gripping the substrate placed on the mounting stage with a second external force or a third external force by using the first portion and the second portion.

IPC Classes  ?

• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
• B25J 15/00 - Gripping heads

Abstract

According to the present disclosure, it is possible to suppress a change in a state of a gas. There is provided a technique that includes: (a) adjusting at least one selected from the group of a pressure and a temperature of a buffer space in a buffer chamber when the temperature of the buffer space is out of a pre-set temperature range or the pressure of the buffer space is out of a pre-set pressure range; and (b) processing a substrate by supplying a gas via the buffer chamber to a process chamber in which the substrate is processed.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

Described herein is a technique capable of improving a controllability of a thickness distribution of an oxide film formed on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas to a heated substrate at a first pressure less than an atmospheric pressure and by oxidizing a surface of the substrate; and (b) forming a second oxide layer by supplying the oxygen-containing gas and the hydrogen-containing gas to the heated substrate at a second pressure less than the atmospheric pressure and different from the first pressure and by oxidizing the surface of the substrate on which the first oxide layer is formed.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

Provided is a technology which enables the formation of a film that has a low resistance.　The present invention comprises: (a) a step of supplying a first element-containing gas to a substrate; (b) a step of supplying a first reducing gas to the substrate; (c) a step of supplying a second reducing gas to the substrate; (d) a step of supplying an inert gas to the substrate; (e) a step of, during step (d), performing steps (a) and (b) at least partially in parallel and increasing the supply flow rate of the inert gas during step (b); and (f) a step of performing (e) and (c) a predetermined number of times to form, on the substrate, a film comprising the first element.

IPC Classes  ?

• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

Provided is technology comprising: a processing chamber for processing a substrate by using gas; a plasma generation unit for bringing the gas into a plasma state; a supply pipe that is provided upstream of the processing chamber; an exhaust pipe that is provided downstream of the processing chamber; a valve that is provided downstream of the exhaust pipe; and an attenuation unit that is provided at a position in the exhaust pipe closer to the valve than the processing chamber, or is provided upstream of a connection portion between the supply pipe and the processing chamber, the attenuation unit attenuating the energy of the plasma-state gas.

IPC Classes  ?

• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass

Abstract

The present invention provides a technology capable of suppressing variations in substrate processing.　The present invention includes: a first step including a step (a1) for storing a processing gas in a storage part; and a second step for cyclically performing a step (b1) and a step (b2) in the stated order a predetermined number of times after the first step, the step (b1) being a step for storing the processing gas in the storage part and the step (b2) being a step for supplying at least a part of the processing gas in the storage part to a substrate placed in a processing chamber.

IPC Classes  ?

• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers

Abstract

Provided is a technology with which temperatures can be measured in a stable manner over a long period under a high-temperature environment.　The present invention comprises: (a) an insulating tube having two through-holes into which two conductive wires of a temperature sensor are respectively inserted; (b) a first protective tube through which the insulating tube is inserted from a first end on the inner side; (c) a cylindrical sleeve that is connected to the first end of the first protective tube in an airtight manner and is attached to an attachment port in an airtight manner from the outside of a furnace; and (d) a second protective tube that is attached to the attachment port from the inside of the furnace and covers the entire first protective tube inside the furnace.

IPC Classes  ?

• G01K 1/08 - Protective devices, e.g. casings
• G01K 1/14 - SupportsFastening devicesArrangements for mounting thermometers in particular locations
• G01K 7/02 - Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat using thermoelectric elements, e.g. thermocouples
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

The present invention improves the characteristics of a film formed on a substrate.　The present invention includes: (a) a step in which a raw material is supplied to a substrate; (b) a step in which a reactant is supplied to the substrate; (c) a step in which a regulating agent is supplied to the substrate to regulate the amount of at least one of the molecules of the raw material and the molecules of the reactant adsorbed to the substrate; (d) a step in which at least one of (a) and (b) is performed in an overlapping manner with (c); and (e) a step in which following (d), (a) or (b) that was performed in an overlapping manner with (c) in (d) is performed independently from (c).

IPC Classes  ?

• H01L 21/318 - Inorganic layers composed of nitrides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass

Abstract

There is provided a technique that enables stable temperature measurement for a long period under a high-temperature environment. It includes (a) an insulating tube with two through-holes, through which two conductive wires of a temperature sensor are respectively inserted, (b) a first protective tube, through which the insulating tube is inserted inwardly from a first end thereof, (c) a cylindrical sleeve airtightly connected to the first end of the first protective tube and airtightly installed to an installation port from an outside of a furnace, and (d) a second protective tube mounted to the installation port from a furnace and covering the entire first protective tube on the inside of the furnace.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• G01K 1/12 - Protective devices, e.g. casings for preventing damage due to heat overloading
• H01L 21/66 - Testing or measuring during manufacture or treatment
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Abstract

There is provided a technique that includes: removing a portion of a substance Y from a substrate by performing a cycle a predetermined number of times, the cycle including: (a1) supplying a first gas containing a first halogen element to the substrate, including a surface of the substance Y containing an element X, to form a first product, containing the first halogen element and the element X, on the substrate; and (b1) supplying a second gas containing a second halogen element to the substrate to convert a portion of the first product into a second product containing the element X and having a higher vapor pressure than the first product, wherein (b1) is performed under a condition where a portion of the substance Y is removable from the substrate when the second gas is supplied to the substance Y not containing the first halogen element on the surface.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

There is provided a technique that includes: a process container; an exhaust pipe connected to the process container; an opening/closing valve installed at the exhaust pipe; a pressure regulating valve installed at the exhaust pipe; a first supply system supplying one of a cleaning gas and an additive gas, having a molecular structure different from that of the cleaning gas, into the exhaust pipe through a gas supply pipe connected to an upstream of at least one of the opening/closing and pressure regulating valves; a second supply system supplying the other of the cleaning gas and the additive gas into the process container; and a controller capable of controlling the opening/closing valve, the pressure regulating valve, and the first and second supply systems so as to perform a cleaning process of simultaneously supplying the cleaning gas and the additive gas while the opening/closing and pressure regulating valves are opened.

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/52 - Controlling or regulating the coating process

Abstract

The present invention comprises a step of etching a film by carrying out a cycle a predetermined number of times, the cycle including (a) a step of supplying a reformed gas to the film, (b) a step of supplying an inert gas to the film, and (c) a step of supplying an etching gas to the film. At least a part of the duration of step (a) and the duration of step (b) overlaps.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

The present invention comprises: a processing container that accommodates a substrate and processes the substrate; a plasma generation unit that generates plasma in the processing container; a calculation unit that calculates an integrated amount of electrical power output by the plasma generation unit during the processing of the substrate; a storage unit that stores, as a master integrated amount, the integrated amount at the end of the processing when the processing result of the substrate is normal; and a control unit that controls the progress of the processing of the substrate on the basis of a recipe that defines processing conditions including the processing time of the substrate, and can perform control so as to derive a correction time for the processing time from the difference between the calculated integrated amount and the master integrated amount.

IPC Classes  ?

• H01L 21/318 - Inorganic layers composed of nitrides

Abstract

The present invention comprises a first opening/closing unit that is provided on a flow path for a vaporized starting material gas and opens/closes the flow path, a second opening/closing unit that is provided in parallel with the first opening/closing unit and has a valve that can be opened to different degrees, a buffer container that is provided on the flow path downstream of the first opening/closing unit and the second opening/closing unit and temporarily retains the starting material gas, a flow rate control unit that is provided downstream of the buffer container, controls the flow rate of the starting material gas, and supplies the starting material gas to a processing space, and a monitoring unit that monitors the value of the pressure inside the buffer container and can control the opening/closing operation of the first opening/closing unit, the opening/closing operation of the second opening/closing unit, and the flow rate control operation of the flow rate control unit in accordance with the value of the pressure.

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• H01L 21/318 - Inorganic layers composed of nitrides

Abstract

The present invention provides technology capable of holding a reaction tube having a protrusion.　The present invention is provided with a holding part for holding at least two protrusions provided to a reaction tube.

IPC Classes  ?

• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Abstract

There is provided a technique that includes: (a) regulating a temperature in a process chamber configured to accommodate a plurality of substrates so that a temperature distribution in an arrangement direction of the substrates in the process chamber becomes a first distribution in which at least a portion of an inside of the process chamber becomes a first temperature; (b) loading the substrates into the process chamber in a state where the temperature distribution in the arrangement direction is the first distribution; (c) after (b), regulating the temperature in the process chamber so that the temperature distribution in the arrangement direction becomes a second distribution in which at least a portion of the inside of the process chamber becomes a second temperature different from the first temperature; and (d) after (c), processing the substrates in a state where the temperature distribution in the arrangement direction is the second distribution.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

The present invention provides a technology comprising: an inner tube that has an opening allowing a treatment gas to be discharged therethrough from a treatment chamber and has a first buffer part having disposed therein a first supply part for supplying the treatment gas to the treatment chamber; an outer tube that is disposed outside the inner tube; and a second buffer part that is formed to be along the outer tube, opposite to the opening across the first buffer part, and surrounded by the inner tube, the outer tube, and the lateral wall of the first buffer part. In a plan view, the width of a first gap formed between the outer wall of the first buffer part and the outer tube is narrower than the width of a second gap formed between the inner tube and the outer tube, from the first buffer part to the opening.

IPC Classes  ?

• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers

Abstract

There is provided a technique that includes: a gas supply pipe including therein a flow path through which a gas flows; at least one temperature sensor including a temperature measurement gauge disposed outside the gas supply pipe; and a protective tube inside which the gas supply pipe and the at least one temperature sensor are disposed, wherein an outlet of the gas supply pipe configured to eject the gas into the protective tube is positioned higher than the at least one temperature sensor, and the gas descends via a gap between an outer wall of the at least one temperature sensor and an inner wall of the protective tube.

IPC Classes  ?

• G01K 13/024 - Thermometers specially adapted for specific purposes for measuring temperature of moving fluids or granular materials capable of flow of moving gases
• G01K 1/02 - Means for indicating or recording specially adapted for thermometers
• G01K 1/08 - Protective devices, e.g. casings
• G01K 1/14 - SupportsFastening devicesArrangements for mounting thermometers in particular locations
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

There is provided a technique that includes: forming a multilayer film with a predetermined thickness on the substrate by performing a cycle a predetermined number of times, the cycle including: (a) depositing a primitive film by exposing the substrate to a precursor gas; and (b) exposing the substrate to a crystal growth inhibition gas or a predetermined gas that forms a film with a different film quality from the primitive film, wherein the predetermined number of times is set such that an absolute value or a gradient of a residual stress of the multilayer film after annealing the multilayer film is smaller than an allowable value.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/52 - Controlling or regulating the coating process

Abstract

A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas including H and O containing radicals to the substrate; (c) supplying a gas including at least one element selected from Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d), wherein in (b), the supply of the processing gas and a supply of an inert gas are performed.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/40 - Oxides
• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/34 - Nitrides
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The present invention comprises: (a) a pair of injection devices that each supply a gas for film formation toward a substrate; (b) a pair of tanks that are respectively connected to the pair of injection devices and accumulate the gas; (c) a pair of on-off valves that each control fluid communication of the gas between the injection devices and the tanks corresponding to each other; (d) a pair of pressure gauges that measure the pressure inside each of the pair of tanks during accumulation of the gas; (e) a pair of flow rate limiters that supply the gas to each of the pair of tanks at a set flow rate that is set in advance in order to form a reference accumulation amount as a target amount of the gas; and (f) a control unit that is configured to accumulate the gas in one of the pair of tanks while controlling fluid communication by the corresponding on-off valve, measure the pressure inside the one tank by means of the pressure gauge during accumulation of the gas, calculate an integrated flow rate of the gas to the one tank or an accumulation amount in the one tank, and correct the set flow rate so as to approach the reference accumulation amount on the basis of the measured pressure and the calculated integrated flow rate or accumulation amount.

IPC Classes  ?

• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers

Abstract

There is provided a technique that includes: (a) forming an intermediate layer containing carbon on a first film formed on a substrate; and (b) forming a second film containing nitrogen on the intermediate layer by using an activated nitrogen-containing gas, wherein in (a), the intermediate layer is formed such that a carbon content per unit area in the intermediate layer differs between a central region and an outer region in a substrate plane of the substrate.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

There is provided a technique that includes forming a film containing a first element on at least a portion of a substrate having a first surface and a second surface, which are made of different substances, by performing a first cycle a first number of times, the first cycle including non-simultaneously performing: (a1) supplying a first gas containing the first element to the substrate to form a substance X containing the first element on the at least a portion of the substrate; and (a2) supplying a first reaction gas, which reacts with the substance X, to the substrate, wherein an incubation time of the first gas on the second surface is longer than an incubation time of the first gas on the first surface, and in (a1), at least a portion of the substance X formed on the substrate is removed.

IPC Classes  ?

• C23C 16/56 - After-treatment
• C23C 16/14 - Deposition of only one other metal element
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers

Abstract

There is provided a technique that includes: (a) forming a first film containing a first element and a second element on a surface of a first base by supplying a first film-forming agent to a substrate including the first base and a second base; (b) forming an inhibitor layer on the first film by supplying a modifying agent to the substrate and causing at least a portion of molecular structures of molecules constituting the modifying agent to be adsorbed on the first film; and (c) forming a second film containing the first element and the second element on a surface of the second base by supplying a second film-forming agent to the substrate with the inhibitor layer formed on the first film.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/04 - Coating on selected surface areas, e.g. using masks
• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• C23C 16/40 - Oxides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process
• C23C 16/56 - After-treatment
• H01L 21/311 - Etching the insulating layers

Abstract

There is provided a technique that includes (a) supplying a first gas and a second gas to a substrate to form a film, and (b) improving a flatness of a surface of the film.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/52 - Controlling or regulating the coating process

Abstract

A method of processing a substrate includes: (a) providing a substrate; (b) supplying a processing gas to the substrate that the surface of the substrate is modified to be OH-terminated; (c) supplying a gas including at least one element selected from Si, Ti, Mo, Al, W, Hf or Zr and a halogen element to the substrate; (d) supplying a gas including one or both of an oxygen element and a nitrogen element to the substrate after (c); and (e) repeating (c) and (d), wherein in (b), the supply of the processing gas and a supply of an inert gas are performed.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/40 - Oxides
• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

The present invention comprises: (a) an adhesion part which has an opening in the center and is configured to be capable of adhering to a purge port of a substrate container; (b) a bush which is connected to a surface, of the adhesion part, opposite to the surface that adheres to the purge port, and which has a cylinder part that communicates with the opening; (c) a gas pipe which is gap-fitted to the inner periphery of the cylinder part such that there is a first gap between; (d) a port flange that is fixedly connected to the gas pipe and has a flange surface substantially perpendicular to the pipe axis of the gas pipe; and (e) an elastic member that is provided between the port flange and the bush and biases the bush in a direction away from the port flange, wherein (d1) the port flange has a hole having a diameter corresponding to the outer diameter of the cylinder part in a manner concentric to the gas pipe, and the outer periphery of the cylinder part is gap-fitted to the hole such that there is a second gap therebetween.

IPC Classes  ?

• H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Abstract

This storage container is provided on a supply line for supplying a raw material gas to a treatment chamber, and comprises: a body part that has a flow path cross-sectional area greater than that of the supply line and is capable of storing the raw material gas therein; and a partition part that is arranged inside the body part along a gas flow direction, and that partitions the inside so as pass through the radial central portion of the body part when viewed in the gas flow direction to form a plurality of flow paths.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition

Abstract

A substrate treatment device including: an atmospheric conveyance part for conveying substrates in the air atmosphere; a plurality of treatment parts disposed along the atmospheric conveyance part and capable of treating the substrates in a vacuum atmosphere; and an intermediate part provided so as to adjoin the treatment parts, receiving the substrates from the atmospheric conveyance part, and transferring the substrates to the treatment parts in an atmosphere having a lower pressure than the air atmosphere.

IPC Classes  ?

• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Abstract

There is provided a technique that includes: a mounting table configured to be capable of mounting a substrate on the mounting table; a heater located above the mounting table and configured to radiate heat rays toward the substrate mounted on the mounting table to heat the substrate; a process container disposed below the heater and configured to accommodate the mounting table, wherein at least a portion of the process container, which is located adjacent to the heater, is made of opaque quartz; and a sealer configured such that transmission of heat rays reflected from the substrate to the sealer is suppressed by the at least a portion of the process container and airtightness between the process container and the heater is maintained by a seal.

IPC Classes  ?

• H01J 37/32 - Gas-filled discharge tubes

Abstract

Included is etching at least a part of a surface of a concave portion by performing a cycle a predetermined number of times, the cycle including: (a) exciting and supplying a modifying agent to a substrate including the concave portion, the surface of which includes a substance containing oxygen; and (b) supplying an etching agent to the substrate in which the oxygen concentration on the surface of the upper portion of the concave portion is changed.

IPC Classes  ?

• H01L 21/311 - Etching the insulating layers
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

A technique including: a process container accommodating a substrate; a first nozzle including a side surface with a first discharge opening directed toward a substrate arrangement region where the substrate is arranged in the process container; a second nozzle including a side surface with a second discharge opening opened to be directed toward at least one of a portion of the side surface of the first nozzle in a range different from a range where the first discharge opening is formed and a space between the portion and an inner wall surface of the process container; a source gas supply system that supplies a source gas into the process container via the first nozzle; and an inert gas supply system that supplies an inert gas into the process container via the second nozzle.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/52 - Controlling or regulating the coating process
• H01J 37/32 - Gas-filled discharge tubes
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

There is provided a technique capable of easily identifying information related to a valid setting item used in a substrate processing apparatus when performing a file editing in a display processing apparatus. There is provided a technique that includes: a memory configured to store a file containing a plurality of items for each of a plurality of categories, setting values for each of the plurality of items and validity information indicating whether the setting values for each of the plurality of items are valid, wherein process conditions for a substrate are classified into the plurality of categories; a display configured to display the validity information and the setting values for each of the plurality of items classified for each of the plurality of categories on a screen for each of the categories; and a manipulator configured to perform an edit operation on the validity information displayed on the screen.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Abstract

A technique for identifying a recipe and combination information associated with the recipe in a processing apparatus. The technique includes: a controller for displaying a recipe selection image including a recipe selection area and a recipe editing image including a management information display area and a combination information editing area, wherein the recipe selection area includes a plurality of recipes including sub-recipes or main recipes are displayed therein, wherein the management information display area is configured such that, when one of the plurality of indicators is selected on the recipe selection image, one of the plurality of recipes associated with it is capable of being displayed therein, and wherein the combination information editing area is configured such that combination information linked to the one of the plurality of recipes displayed in the management information display area is capable of being displayed therein.

IPC Classes  ?

• G06F 3/04842 - Selection of displayed objects or displayed text elements
• G06F 3/04817 - Interaction techniques based on graphical user interfaces [GUI] based on specific properties of the displayed interaction object or a metaphor-based environment, e.g. interaction with desktop elements like windows or icons, or assisted by a cursor's changing behaviour or appearance using icons
• G06F 3/04886 - Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser using a touch-screen or digitiser, e.g. input of commands through traced gestures by partitioning the display area of the touch-screen or the surface of the digitising tablet into independently controllable areas, e.g. virtual keyboards or menus

Abstract

Provided is a technique capable of obtaining a desired processing quality for each of a plurality of substrates even when the plurality of substrates are processed while being rotated. There is provided a technique that includes: a process chamber in which a plurality of substrates are processed; a gas supplier configured to be capable of supplying a gas to the process chamber; a substrate support provided in the process chamber so as to be rotatable and configured to be capable of supporting the plurality of substrates in a circumferential arrangement; and a detector configured to detect a rotation state of the substrate support.

IPC Classes  ?

• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
• C23C 16/34 - Nitrides
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

There is provided a technique that includes a controller configured to be capable of operating a first screen capable of displaying or operating apparatus information that is used in the substrate processing apparatus while at least one second screen capable of displaying at least one piece of related information which is related to the apparatus information is displayed on the first screen.

IPC Classes  ?

• G06F 3/147 - Digital output to display device using display panels
• G06F 3/04845 - Interaction techniques based on graphical user interfaces [GUI] for the control of specific functions or operations, e.g. selecting or manipulating an object, an image or a displayed text element, setting a parameter value or selecting a range for image manipulation, e.g. dragging, rotation, expansion or change of colour
• G06F 3/04886 - Interaction techniques based on graphical user interfaces [GUI] using specific features provided by the input device, e.g. functions controlled by the rotation of a mouse with dual sensing arrangements, or of the nature of the input device, e.g. tap gestures based on pressure sensed by a digitiser using a touch-screen or digitiser, e.g. input of commands through traced gestures by partitioning the display area of the touch-screen or the surface of the digitising tablet into independently controllable areas, e.g. virtual keyboards or menus
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

A film having film continuity can be formed. There is provided a technique including: preparing a substrate having a film formed on a surface thereof; and slimming the film by pulse-supplying a halogen-containing gas to the film without supplying oxygen-containing gas to the film. Additionally, the slimming step is performed without supplying plasma.

IPC Classes  ?

• H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• C23F 1/12 - Gaseous compositions
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

There is provided a technique that includes: organically terminating a first region of a substrate by supplying an adsorption control agent containing an organic ligand to the substrate while regulating a temperature of the substrate including the first region and a second region different from the first region formed on a surface of the substrate depending on a composition of the first region; and selectively growing a film on the second region by supplying a deposition gas to the substrate.

IPC Classes  ?

• H01L 21/3105 - After-treatment
• C23C 16/04 - Coating on selected surface areas, e.g. using masks
• C23C 16/34 - Nitrides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers

Abstract

Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a processing method including: (a) transferring a substrate from a storage container storing one or more substrates including the substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber when it is determined that a maintenance timing is reached based on information comprising at least the number of processed substrates; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, and setting the process chamber to a maintenance enable state after the substrate processing is completed by stopping the one or more substrates from being transferred into the process chamber.

IPC Classes  ?

• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

A film forming method for forming a film on a workpiece is disclosed including: supplying a source gas into a treatment container provided with the workpiece to adsorb the source gas on the workpiece, and then purging an inside of the treatment container with a first purge gas, and supplying a reaction gas into the treatment container after the source gas supply process to oxidize the source gas adsorbed on the workpiece, and then purging the inside of the treatment container with a second purge gas, in which for example, the source gas and a first catalyst gas are supplied to the treatment container in the source gas supply process, the reaction gas and a second catalyst gas are supplied to the treatment container in the reaction gas supply process, and the same or different non-aromatic amine gas are used as the first catalyst gas and the second catalyst gas.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/40 - Oxides
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A substrate processing apparatus includes: (a) a process tube including a cylindrical portion which is closed at an upper end and accommodates at least one substrate therein; (b) a supply buffer provided on a sidewall of the cylindrical portion to protrude outward from the sidewall; (c) at least one first injector provided inward of the supply buffer to extend along an axial direction of an axis of the cylindrical portion; and (d) a plurality of exhausters formed in the sidewall of the cylindrical portion to exhaust a precursor gas, the plurality of exhausters including a pair of exhausters open such that both sides of the pair of exhausters sandwich a virtual plane set to pass through a circumferential center of the cylindrical portion and the axis of the cylindrical portion at a boundary between the supply buffer and the cylindrical portion in a plan view.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/34 - Nitrides
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

There is provided a technique that includes (a) supplying a first gas, which inhibits a second gas from adsorbing to a first adsorption site, to a substrate including a predetermined surface on which the first adsorption site exists; and (b) supplying the second gas to the substrate under a condition in which an amount of adsorption of the second gas on the predetermined surface becomes self-limiting, wherein (a) begins at the same time as (b) or before (b), and wherein the first gas has a larger amount of adsorption on the predetermined surface than the second gas.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

There is provided a technique that includes: preparing the substrate including a silicon-containing film and a metal film composed of a metal element, which includes at least one selected from the group of tungsten, titanium, ruthenium, and molybdenum and, which are formed on a surface of the substrate; and simultaneously performing modifying the metal film and modifying the silicon-containing film by supplying reactive species, which are generated by plasma-exciting a processing gas containing hydrogen and oxygen, to the substrate.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/321 - After-treatment
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

Described herein is a technique capable of forming a film so as to fill an inside of a recess provided on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a film by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a gas to a substrate in a process chamber; and (a-2) vacuum-exhausting an inner atmosphere of the process chamber; and (b) generating a predetermined temperature difference between a front surface of the substrate and a back surface of the substrate at a predetermined timing during (a).

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/34 - Nitrides
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Abstract

Provided is a technique of processing a substrate including (a) adsorbing a first adsorption inhibitor to a first portion of the substrate at a first temperature, (b) forming a film on a second portion of the substrate by supplying a processing gas at a second temperature, (c) removing at least a part of the first adsorption inhibitor adsorbed to the substrate, at a third temperature, (d) supplying a second adsorption inhibitor to the substrate at a fourth temperature higher than or equal to the first temperature, (e) supplying the processing gas to the substrate at a fifth temperature, and (f) removing at least a part of the second adsorption inhibitor adsorbed to the substrate, at a sixth temperature. Where (b) is performed after (a), (c) is performed after (b), (d) is performed after (c), (e) is performed after (d), and (f) is performed after (e).

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

Abstract

Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer containing silicon on a substrate by performing a first cycle once or more, wherein the first cycle includes: (a1) supplying a first element-containing gas containing a first element other than silicon to the substrate; (a2) supplying a first reducing gas to the substrate non-simultaneously with (a1); and (a3) supplying a first silicon-containing gas to the substrate; and (b) forming a second layer on the first layer by performing a second cycle once or more after (a), wherein the second cycle comprises: (b1) supplying a second element-containing gas to the substrate; and (b2) supplying a second reducing gas to the substrate.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

Provided is a method of processing a substrate including: forming a film on the substrate by performing a cycle, multiple times, including non-simultaneously performing: (a) supplying a precursor gas and inert gas to the substrate; and (b) supplying a reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration or amount of the precursor gas differs between the first and second tank. Further, in (a), the process chamber is filled with the inert gas before the precursor gas and the inert gas are supplied to the substrate.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/50 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers

Abstract

To reduce a burden on an operating personnel in setting transfer operation information of a transfer robot configured to transfer a substrate, there is provided a technique that includes: a placement chamber for placing a container accommodating a substrate; a first transfer chamber including a first transfer robot; process modules for processing the substrate; a second transfer chamber including a second transfer robot; a memory storing a plurality of pieces of layout information indicating arrangements of the placement chamber, the first transfer chamber, the second transfer chamber and the process modules; and a controller for controlling operations of the first transfer robot and the second transfer robot based on at least one of the plurality of pieces of layout information in the memory.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

To accept a subsequent container regardless of a usage state of a transport structure and thereby to improve a transfer efficiency of a container, there is provided a technique that includes: a mounting structure on which a container provided with a door is placed; a storage structure for storing the container; a processing structure; a transport structure for transporting a substrate to the processing structure and including: an opening/closing structure opening or closing the door; and a checker for checking a state of the substrate in the container; a transfer structure for holding the container and transferring the container to the mounting structure, the storage structure and the transport structure; and a controller for controlling the transfer structure to hold the container on the mounting structure and the mounting structure to accept a placement of a subsequent container, regardless of a usage state of the transport structure.

IPC Classes  ?

• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

There is provided a technique that includes: (a) supplying a decomposable process gas containing silicon to the substrate to form a layer containing a Si—Si—Si bond on the substrate; and (b) supplying a reaction gas to the substrate to dissociate the Si—Si—Si bond.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process

Abstract

It is possible to improve a step coverage performance of a film formed on a substrate provided with a concave structure. There is provided a technique that includes: (a) supplying a source gas to a concave structure of a substrate provided with an adsorption site on a surface thereof at a rate faster than an adsorption rate at which a precursor of the source gas is adsorbed to the adsorption site; (b) supplying a purge gas to the concave structure; and (c) supplying the source gas to the concave structure at a rate slower than the adsorption rate.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/52 - Controlling or regulating the coating process

Abstract

There is provided a technique for stably controlling a gas flow rate even when the flow rate is difficult for an MFC to control. There is provided a technique that includes: a process vessel; a first gas pipe for a process gas; a flow rate measurer at the first gas pipe to measure a flow rate of the process gas; a second gas pipe connected to the first gas pipe for supplying a first inert gas to a tank storing source material; a first flow rate regulator at the second gas pipe to adjust a flow rate of the first inert gas; a first heater for adjusting temperature of the first inert gas; and a controller for adjusting the flow rate or the temperature of the first inert gas such that the flow rate of the process gas measured by the flow rate measurer becomes a predetermined flow rate.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation

Abstract

Provided is a technique including: a first container mover capable of moving a container; a second container mover disposed at a position different from the first container mover and capable of moving the container; a plurality of process modules capable of processing a substrate in the container; a substrate carrier disposed between the first container mover and the second container mover, configured to be communicable with the plurality of process modules, and capable of carrying the substrate; a substrate carry robot provided in the substrate carrier and capable of carrying the substrate to the process module; a third container mover disposed between the first container mover and the second container mover, and capable of moving the container from the first container mover to the second container mover; and a controller.

IPC Classes  ?

• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

There is provided a technique that includes: a processing container including a first region in which a substrate is processed and a second region in which the substrate is not disposed; a first supplier that supplies a processing gas to the first region; a second supplier that supplies an adsorption inhibiting gas to the second region in the processing container, a first supply system capable of supplying the processing gas to the first supplier; a second supply system capable of supplying the adsorption inhibiting gas to the second supplier; and a controller capable of controlling the first supply system and the second supply system to perform: (a) supplying the adsorption inhibiting gas to the second region; and (b) supplying the processing gas to the first region after (a).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

It is possible to improve characteristics of a film formed on a substrate. There is provided a technique that includes: (a) performing a first supply of a source gas containing a first element and a halogen element to a substrate; (b) performing a supply of a first reducing gas to the substrate; (c) performing a supply of a second reducing gas to the substrate; (d) performing a second supply of the source gas to the substrate, (e) executing (b) and (d) X times without performing a purge between (b) and (d); and (f) executing (e) and (c) Y times.

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

The present invention has: a main body that houses a starting material which is in a liquid state at normal temperature; a plurality of temperature sensors that are provided on the side wall of the main body; and a collection unit that is formed so as to collect the starting material on the side wall side on which a temperature sensor disposed at the lower end among the plurality of temperature sensors is provided.

IPC Classes  ?

• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials

Abstract

A substrate processing quality is improved when supplying different gases simultaneously. There is provided a technique that includes: a process vessel; a first supplier supplying a first gas into the process vessel; a gas pipe conveying a second and a third gas into the process vessel, the third gas having an element of the second gas but a molecular structure thereof differing from the second gas; a storage at the gas pipe to store the second gas and the third gas; a first valve at the gas pipe between the storage and the process vessel; a second and a third gas supplier supplying the second and the third gas into the storage, respectively; and a controller for storing the second and the third gas in the storage, supplying the first gas to a substrate and supplying the second and the third gas to the substrate from the storage.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/34 - Nitrides
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

A substrate processing apparatus includes: a processing vessel provided with a processing space in which a substrate is processed; and a constituent member disposed in the processing space, in which a wall surface facing the processing space provided in the processing vessel and a surface of the constituent member facing the processing space are each covered with a fluorine-containing substance, and the fluorine-containing substance is selected according to a processing temperature of the substrate.

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

Provided is technology whereby a fastening force can be applied to a seal surface without variation.　The present invention comprises: a metal port having a hole that can receive a mounting part formed at one end of a pipe; a spacer configured so as to engage with a step part provided on the distal end side of the mounting part; a metal seal configured so as to be capable of sealing between the distal end of the mounting part and a contact surface of the metal port; and a nut having an inner diameter through which the mounting part can be inserted, the nut being screwed onto the metal port and pressing the spacer toward the metal port side. The spacer is divided into a plurality of arc shapes, is disposed on the step part so as to form an annular shape as a whole, and has a positioning mechanism that eliminates the need to adjust the positioning around the axis of the pipe.

IPC Classes  ?

• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• F16L 23/024 - Flanged joints the flanges being connected by members tensioned axially characterised by how the flanges are joined to, or form an extension of, the pipes

Abstract

The present invention comprises: a processing chamber for processing a substrate; a first gas supply path for supplying a first gas to the substrate from a side of the processing chamber; and a first gas introduction port for introducing the first gas to a location having a prescribed temperature in the first gas supply path.

IPC Classes  ?

• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers

Abstract

Provided is a technology capable of economically and safely operating a substrate processing device by mixing wafers different in material. The substrate processing device comprises: a mapping device that determines a material of a substrate transported into the substrate processing device while the substrate is stored in a carrier; and a control unit configured to hold first information relating to the material of the transported substrate in the substrate processing device while updating the first information and to be able to control the substrate processing device so as to send out, when the first information does not satisfy a condition determined for a current operation mode among conditions each determined for each of the plurality of operation modes, the carrier storing the substrate that does not satisfy the predetermined condition.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

Provided is a technique that makes it possible to improve the surface roughness of a film.　The present invention includes (a) a step in which a second film is formed on a first film, the etching rate of the second film when a first gas capable of removing at least part of the first film is supplied being a second etching rate equal to or lower than a first etching rate of the first film, and (b) a step in which the first gas is supplied to the first film.

IPC Classes  ?

• H01L 21/3065 - Plasma etchingReactive-ion etching

Abstract

The purpose of the present invention is to provide a technology capable of improving the step coverage of a film formed on a substrate.　The present invention includes a supply step for supplying a processing gas to a substrate from a storage part in which the processing gas is stored. The supply step is carried out such that the amount of gas in the storage part when the supply step has ended is at or above a prescribed amount.

IPC Classes  ?

• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
• H01L 21/318 - Inorganic layers composed of nitrides

Abstract

Provided is a technique including: a seal ring that seals flanges of a joint; an inner ring that is disposed on an inner peripheral side of the seal ring and restricts movement or deformation of the seal ring toward the inner peripheral side; and an outer ring that is disposed on an outer peripheral side of the seal ring and restricts movement or deformation of the seal ring toward the outer peripheral side, in which a plurality of spaces for receiving thermal expansion of a volume of the seal ring is provided in a circumferential direction between the inner ring and the outer ring.

IPC Classes  ?

• F16J 15/10 - Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces with non-metallic packing
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

There is provided a technique that includes: a) supplying an adsorption inhibition gas to a substrate; b) supplying a precursor gas to the substrate; c) supplying a reaction gas to the substrate; and d) forming a film containing an element contained in the precursor gas on the substrate by performing a), b), and c) a predetermined number of times in a state where an amount of exposure of the precursor gas supplied in b) to the substrate is larger than an amount of exposure of the adsorption inhibition gas supplied in a) to the substrate.

IPC Classes  ?

• C23C 16/02 - Pretreatment of the material to be coated
• C23C 16/40 - Oxides
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The present invention comprises: (a) a step of supplying a first fluid containing hydrogen peroxide to a substrate on which a silicon-containing film and a metal film are formed; and (b) a step of supplying a second fluid including a carboxy group to the substrate.

IPC Classes  ?

• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers

Abstract

There is provided a technique that includes: containers accumulating a material, a flow rate controller controlling a flow rate of the material supplied to a process space where a processing target is placed by regulating an opening state of a control valve; pipes being in fluid communication between the flow rate controller and the containers respectively; open and close valves provided at the pipes respectively, and a controller capable of supplying the material to the process space via the flow rate controller from one container when the opening state of the control valve does not reach a preset threshold, and supplying the material to the process space via the flow rate controller from two or more containers by opening the open and close valve provided between another container different from the one container and the flow rate controller when the opening state of the control valve reaches the preset threshold.

IPC Classes  ?

• H01L 21/66 - Testing or measuring during manufacture or treatment
• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

There is provided a substrate processing apparatus, comprising: a reaction tube in which a substrate is processed; and a plurality of electrodes including at least one first electrode to which a predetermined potential is applied and at least one second electrode to which a reference potential is applied. Two or more of the at least one first electrode or the at least one second electrode are arranged side-by-side in a cross sectional view perpendicular to a vertical direction of the reaction tube.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01J 37/32 - Gas-filled discharge tubes

Abstract

There is provided technique that includes: (a) forming a first nitridation film on a substrate housed in a process container by supplying a first film-forming agent to the substrate; and (b) forming a second nitridation film on a surface of the first nitridation film adhering to an inside of the process container by supplying a second film-forming agent to the first nitridation film adhering to the inside of the process container in (a). When the first nitridation film having a tensile stress is formed in (a), the second nitridation film having a compressive stress is formed in (b), and when the first nitridation film having a compressive stress is formed in (a), the second nitridation film having a tensile stress is formed in (b).

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/52 - Controlling or regulating the coating process

Abstract

This method comprises: (a) a step for supplying a raw material having a partial structure X and a partial structure Y to a substrate or supplying a first raw material having the partial structure X and a second raw material having the partial structure Y to form, on the surface of the substrate, a first film including at least a portion of the partial structure X and a partial structure Z which is derived from the partial structure Y; and (b) a step for exposing the first film formed on the substrate to a modifier to modify the first film into a second film including at least a portion of the partial structure X and having an amount of the partial structure Z smaller than the amount of the partial structure Z included in the first film.

IPC Classes  ?

• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass

Abstract

There is provided a technique that includes: (a) mounting a substrate on a mounting stage in which at least a part of a surface is constituted by a first member; (b) forming films by supplying a first gas, the films including a first film formed on a surface of the substrate and a second film having a portion continuous with the first film and formed on a surface of the first member; and (c) generating stress attributable to a difference in thermal deformation amount between the first member and the substrate, inside the second film, and making at least a part of the second film discontinuous.

IPC Classes  ?

• H01J 37/32 - Gas-filled discharge tubes
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/56 - After-treatment
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

There is provided a technique that includes: a heat generator installed for each of control zones and configured to raise an internal temperature of a reaction tube by heat generation; a circuit configured to equalize resistance values in the respective control zones, wherein the circuit is a parallel circuit and is configured such that an output variable element is installed in one or more of output circuits constituting the parallel circuit.

IPC Classes  ?

• F27B 17/00 - Furnaces of a kind not covered by any of groups
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H05B 1/02 - Automatic switching arrangements specially adapted to heating apparatus
• H05B 3/00 - Ohmic-resistance heating

Abstract

There is provided a technique capable of suppressing a variation within a substrate processing. There is provided a technique that includes performing a cycle a plurality of times, the cycle including: (a) storing a first process gas in a storage; (b) supplying the first process gas from the storage at a first temperature to a substrate after (a) to change a temperature of the storage to a second temperature lower than the first temperature; and (c) changing the temperature of the storage after supplying the first process gas to a third temperature after (b), wherein (a), (b) and (c) are sequentially performed in the cycle, and wherein the third temperature is kept within a predetermined temperature range while the cycle is performed the plurality of times.

IPC Classes  ?

• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process
• H01J 37/32 - Gas-filled discharge tubes
• H01L 21/66 - Testing or measuring during manufacture or treatment

Abstract

There is provided a technique that includes: displaying a recipe editing screen including at least a selection screen area that displays a parameter list for selection of parameters included in a recipe of a substrate processing apparatus, and a parameter editing screen area that edits the parameters; receiving a selection operation that selects an editing target parameter from the parameter list; displaying, on the parameter editing screen area, in an editable manner, a timing chart that is changeable at a time of each process in a series of processes included in a substrate processing process; and editing the editing target parameter by receiving an operation instruction to edit the timing chart displayed on the parameter editing screen area and changing the timing chart according to the operation instruction.

IPC Classes  ?

• G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

It is possible to improve an energy saving efficiency of an apparatus. There is provided a technique using a heater structure that includes: a heat insulating structure provided with a heat generator configured to heat an inside of a reaction tube; and a multilayer assembly located outside the heat insulating structure and provided with a plurality of spaces therein, wherein the multilayer assembly comprises a plurality of heat insulators arranged along a direction extending outward from the heat insulating structure, the plurality of spaces are provided between the plurality of heat insulators, respectively, and an amount of a heat dissipated from the multilayer assembly is variable in accordance with a thermal conductivity of each of the spaces and a thermal emissivity of each of the heat insulators.

IPC Classes  ?

• H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

According to one aspect of a technique the present disclosure, there is provided a method of identifying a cause of an abnormality, including: (a) outputting an alarm indicating the failure detected based on sensor information; (b) acquiring a plurality of apparatus data comprising a plurality piece of the sensor information related to the alarm; (c) comparing each of the apparatus data with a threshold value; and (d) when none of the apparatus data acquired in (b) exceed the threshold value according to a comparison result in (c), identifying a specific apparatus data among the plurality of apparatus data closest to the threshold value as a factor of generating the alarm.

IPC Classes  ?

• G08B 29/04 - Monitoring of the detection circuits
• F27B 17/00 - Furnaces of a kind not covered by any of groups
• F27D 21/04 - Arrangement of indicators or alarms
• G05B 23/02 - Electric testing or monitoring
• G08B 21/18 - Status alarms
• H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers

Abstract

There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and additive gas that reacts with the cleaning gas, respectively, from first and second supply parts among at least three supply parts into the process container, and (b) separately supplying the cleaning and additive gases, respectively, from the second and first supply parts into the process container. (A) and (b) include stopping the supply of the cleaning and additive gases into the process container and exhausting the process container's interior. In at least one selected from the group of (a) and (b) an inert gas is supplied from each of the at least three supply parts at a same flow rate, after the supply of the cleaning and additive gases is stopped and before the process container is exhausted.

IPC Classes  ?

• B08B 5/00 - Cleaning by methods involving the use of air flow or gas flow
• C23C 16/34 - Nitrides
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/56 - After-treatment
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

There is provided a technique that includes: (a) performing a cycle including supplying a source containing a predetermined element, carbon, and hydrogen to a substrate and supplying a first modifying agent containing nitrogen to the substrate, a predetermined number of times to form, on the substrate, a first film containing the predetermined element, nitrogen, carbon, and hydrogen bonded to carbon; and (b) supplying, to the substrate on which the first film is formed, a second modifying agent that is different from the first modifying agent and contains a compound containing a nitrogen-hydrogen bond and a nitrogen-nitrogen bond per molecule or a derivative of the compound, to modify the first film to a second film that is lower in content rate of the hydrogen bonded to carbon than the first film and contains the predetermined element, carbon, and nitrogen.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/34 - Nitrides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process

Abstract

A technique that includes: a processing container in which a substrate is processed; a processing gas supplier that supplies a processing gas with which the substrate is processed; a processing gas supply pipe that is connected to the processing gas supplier and the processing container and through which the processing gas is supplied to the processing container, an exhauster that is provided on the processing gas supply pipe; and a controller for controlling the exhauster to discharges a remaining gas in the processing gas supply pipe out of the processing gas supply pipe.

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/52 - Controlling or regulating the coating process
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A uniformity of a substrate processing within a substrate surface can be improved. There is provided a technique that includes: a process vessel in which a process gas is excited into a plasma state; a gas supplier supplying the process gas into the process vessel; and a plasma generation structure wound in a spiral shape along an outer periphery of the process vessel and including at least two coils to which high-frequency powers are respectively supplied, wherein diameters of the at least two coils are substantially the same, lengths of the at least two coils are substantially same, and a value of a net amplitude obtained by overlapping an amplitude of a superposition of standing waves respectively generated by each of the at least two coils is set to be smaller than a peak of the amplitude of each of the standing waves.

IPC Classes  ?

• H01J 37/32 - Gas-filled discharge tubes