Abstract

1-xx33 (wherein 0 ≤ x ≤ 1), which is formed on the metal film by means of epitaxial growth.

IPC Classes  ?

• H01L 41/047 - Electrodes
• H01L 41/09 - Piezo-electric or electrostrictive elements with electrical input and mechanical output
• H01L 41/187 - Ceramic compositions
• H01L 41/319 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
• B41J 2/14 - Structure thereof
• B41J 2/16 - Production of nozzles
• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• C23C 14/08 - Oxides
• C23C 14/14 - Metallic material, boron or silicon

Abstract

This film structure comprises: a substrate (11) which is a silicon substrate having an upper surface (11a) that is the (100) plane; an alignment film (12) which is formed on the upper surface (11a) and has a cubic crystal structure, while containing a zirconium oxide film oriented in the (100) direction; and a conductive film (13) which is formed on the alignment film (12) and has a cubic crystal structure, while containing a platinum film oriented in the (100) direction. The average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is higher than the average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).

IPC Classes  ?

• H01L 41/319 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
• C01G 25/00 - Compounds of zirconium
• C23C 14/08 - Oxides
• C23C 14/34 - Sputtering
• C23C 14/35 - Sputtering by application of a magnetic field, e.g. magnetron sputtering
• H01L 41/187 - Ceramic compositions
• H01L 41/316 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition

Abstract

[Problem] To provide a processing device that is able to reduce the waiting time period when a conveyance robot conveys a substrate from a processing chamber to another processing chamber, even if the number of processing chambers is increased. [Solution] One aspect of the present invention is a processing device provided with: a first delivery chamber 231; a first stage 241 that holds a substrate; a first conveyance chamber 261 that is connected to the first delivery chamber via a first gate valve 222; a first conveyance robot 261a; a first processing chamber 212 that is connected to the first conveyance chamber via a second gate valve 223; a second stage 242 that holds a substrate; a second processing chamber 213 that is connected to the first conveyance chamber via a third gate valve 224; a third stage 243 that holds a substrate; a second delivery chamber 232 that is connected to the first conveyance chamber via a first opening 271; and a fourth stage 244 that holds a substrate.

IPC Classes  ?

• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass

Abstract

The film-forming device according to one embodiment of the present invention has: a chamber 21 electrically connected to a grounding potential; a target TG disposed in the chamber; a power supply section 32 that supplies high-frequency power to the target; gas supply sections 23, 24 that supply a gas to the inside of the chamber; a substrate holding insulating section 25b, which is disposed in the chamber, and which holds a substrate SB by having the substrate face the target; a conductive supporting section 42 that supports the substrate holding insulating section; and a first insulating member 53 disposed between the conductive supporting section and the chamber. The conductive supporting section is electrically floating from the chamber due to the first insulating member, the substrate is held by the substrate holding insulating section when an outer peripheral section of the substrate comes into contact with the substrate holding insulating section, the substrate is electrically floating from the conductive supporting section, and the substrate holding insulating section does not overlap a center section of the substrate in plan view.

IPC Classes  ?

• H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
• H01L 41/187 - Ceramic compositions
• H01L 41/316 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition

Abstract

Provided is a film structure having a conductive film formed on a substrate and a piezoelectric film formed on the conductive film, wherein the piezoelectric constant of the piezoelectric film can be increased. A film structure 10 has a conductive film 13, a film 14, and a film 15 that are sequentially formed on a substrate 11. The conductive film 13 contains platinum that has a cubic crystal structure and that is (100)-oriented. The film 14 contains a first composite oxide that is represented by Pb(Zr1−xTix)O3 and that is (100)-oriented in the pseudocubic representation. The film 15 contains a second composite oxide that is represented by Pb(Zr1−yTiy)O3 and that is (100)-oriented in the pseudocubic representation. x and y satisfy 0 < x < 1, 0 ≤ y ≤ 0.1, and y < x.

IPC Classes  ?

• H01L 41/187 - Ceramic compositions
• H01L 41/316 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
• H01L 41/317 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
• H01L 41/319 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
• H01L 41/43 - Inorganic materials by sintering

Abstract

Provided is a film structure having a conductive film formed on a substrate and a piezoelectric film formed on the conductive film, wherein the piezoelectric constant of the piezoelectric film can be increased. A method for manufacturing a film structure according to the present invention has steps for: forming, on a substrate 11, a conductive film 13 containing platinum that has a cubic crystal structure and that is (100)-oriented; applying heat treatment to the conductive film 13 at a temperature of 450-600°C; and then forming a film 15 containing a second composite oxide represented by Pb(Zr1−yTiy)O3, with a film 14 containing a first composite oxide represented by Sr(Ti1−xRux)O3 interposed therebetween. x satisfies 0 ≤ x ≤ 1, and y satisfies 0 ≤ y ≤ 0.1.

IPC Classes  ?

• H01L 41/319 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
• H01L 41/187 - Ceramic compositions
• H01L 41/316 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
• H01L 41/317 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
• H01L 41/43 - Inorganic materials by sintering

Abstract

A film structure (10), having: a substrate (11); a piezoelectric film (14) which is formed on the substrate (11) and which includes a first composite oxide represented by the composition formula Pb(Zr1-xTix)O3; and a piezoelectric film (15) which is formed on the piezoelectric film (14) and which includes a second composite oxide represented by the composition formula Pb(Zr1-yTiy)O3. x satisfies 0.10 ឬ x ≤ 0.20, y satisfies 0.35 ≤ y ≤ 0.55, the piezoelectric film (14) has tensile stress, and the piezoelectric film (15) has compressive stress.

IPC Classes  ?

• H01L 41/187 - Ceramic compositions
• C23C 14/08 - Oxides
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass
• H01L 41/316 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
• H01L 41/317 - Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
• H01L 41/43 - Inorganic materials by sintering

Abstract

Provided is a release agent that can adhere easily to the surface of a component. An aspect of the invention is a release agent comprising particles 53, and an oil and/or a solvent, wherein: the particles, the oil, and the solvent each have a heat resistance of 250°C or higher; each particle includes a grain 51, and a first film 52 or a substance covering the grain; and the first film or the substance has a friction coefficient of 0.4 or less (preferably 0.3 or less, more preferably 0.2 or less).

IPC Classes  ?

• C09K 3/00 - Materials not provided for elsewhere
• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• C23C 16/26 - Deposition of carbon only
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 26/00 - Coating not provided for in groups

Abstract

Provided is a lubricant that can adhere easily to the surface of a component. An aspect of the invention is a lubricant comprising particles 53, wherein: each particle includes a grain 51, and a first film 52 or a substance covering the grain; and the first film or the substance has a friction coefficient of 0.4 or less. The water contact angle on the surface of the particle 53 is preferably 60° or greater, and the grain 51 preferably includes a substance having a friction coefficient of 0.4 or less. The lubricant preferably includes a solvent.

IPC Classes  ?

• C10M 171/06 - Particles of special shape or size
• C10M 103/00 - Lubricating compositions characterised by the base-material being an inorganic material
• C10M 103/02 - CarbonGraphite
• C10M 103/04 - MetalsAlloys
• C10M 103/06 - Metal compounds
• C10M 125/02 - CarbonGraphite
• C10M 125/04 - MetalsAlloys
• C10M 125/20 - Compounds containing nitrogen
• C10M 125/22 - Compounds containing sulfur, selenium or tellurium
• C10M 125/26 - Compounds containing silicon or boron, e.g. silica, sand
• C10M 125/30 - Clay
• C10N 10/02 - Groups 1 or 11
• C10N 10/06 - Groups 3 or 13
• C10N 10/08 - Groups 4 or 14
• C10N 10/10 - Groups 5 or 15
• C10N 10/12 - Groups 6 or 16
• C10N 20/00 - Specified physical properties of component of lubricating compositions
• C10N 20/06 - Particles of special shape or size
• C10N 30/06 - OilinessFilm-strengthAnti-wearResistance to extreme pressure
• C10N 50/04 - Aerosol

Abstract

[Problem] To provide a gas supply device that supplies to a vacuum chamber a sublimable solid organic compound with a large molecular weight. [Solution] One aspect of the present invention is a gas supply device that supplies gas to a vacuum chamber 21, and that is provided with the following: a container 16 that is connected to the vacuum chamber via a first pipe 19; a heating mechanism 20 that heats the container; a sublimable solid organic compound 17 stored in the container; and a carrier gas supply source 11 that is connected to the container via a second pipe 18.

IPC Classes  ?

• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• C23C 16/26 - Deposition of carbon only
• C23C 16/32 - Carbides
• C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
• G11B 5/72 - Protective coatings, e.g. anti-static
• G11B 5/725 - Protective coatings, e.g. anti-static containing a lubricant
• G11B 5/84 - Processes or apparatus specially adapted for manufacturing record carriers

Abstract

[Problem] To provide a BxNyCzOw film having a surface having a water contact angle of 50 ° or less. [Solution] One embodiment of the present invention is a BxNyCzOw film formed on a substrate, wherein x, y, z, and w in the BxNyCzOw film satisfy equations (1)-(5) below. (1) 0.4 < x < 0.6 (2) 0.4 < y < 0.6 (3) 0 ≤ z < 0.1 (4) 0 ≤ w < 0.1 (5) x + y + z + w = 1

IPC Classes  ?

• G11B 5/72 - Protective coatings, e.g. anti-static
• G11B 5/725 - Protective coatings, e.g. anti-static containing a lubricant
• G11B 5/84 - Processes or apparatus specially adapted for manufacturing record carriers

Abstract

Noise filling in perceptual transform audio codecs is improved by performing the noise filling with a spectrally global tilt, rather than in a spectrally flat manner.

IPC Classes  ?

• G10L 21/00 - Speech or voice signal processing techniques to produce another audible or non-audible signal, e.g. visual or tactile, in order to modify its quality or its intelligibility
• G10L 19/012 - Comfort noise or silence coding
• G10L 19/04 - Speech or audio signal analysis-synthesis techniques for redundancy reduction, e.g. in vocodersCoding or decoding of speech or audio signals, using source filter models or psychoacoustic analysis using predictive techniques
• G10L 19/028 - Noise substitution, e.g. substituting non-tonal spectral components by noisy source

Abstract

The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

IPC Classes  ?

• C23C 14/34 - Sputtering