A red light-emitting diode utilizing electron tunneling is disclosed. Tunneling occurs between two well layers arranged around a barrier layer due to the wave-like properties of electrons. Due to the unique properties and strain of the crystal structure, the polarization in the well layer causes displacement of electrons and holes. The electrons tunnel through the barrier layer and recombine with holes in the valence band on the opposite side.
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
2.
VERTICALLY-STACKED RGB MICRO-LIGHT-EMITTING DIODE HAVING CORNER MESA CONTACT STRUCTURES AND MANUFACTURING METHOD THEREOF
The present inventive concept relates to a stacked-RGB micro-light-emitting diode having corner mesa contact structures and a manufacturing method thereof. The stacked-RGB micro-light-emitting diode having corner mesa contact structures includes a first light-emitting structure, a first tunnel junction layer, a first anode layer, a second anode layer, a second tunnel junction layer, a second light-emitting structure, and a third light-emitting structure, which are sequentially stacked on a substrate. According to the present inventive concept, it is possible to increase the lifespan of the micro-light-emitting diode by forming the corner mesa contact structure on each of the light-emitting structures by etching a vertically-stacked structure.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
3.
RGB MICRO-LIGHT-EMITTING DIODE HAVING VERTICALLY-STACKED STRUCTURE WITH CORNER MESA CONTACT STRUCTURES AND MANUFACTURING METHOD THEREOF
The present inventive concept relates to an RGB micro-light-emitting diode having a vertically-stacked structure with corner mesa contact structures, and a manufacturing method thereof. The RGB micro-light-emitting diode having a vertically-stacked structure with corner mesa contact structures includes an n-type contact electrode layer, a first light-emitting structure, a common electrode layer, a second light-emitting structure, a tunnel junction layer, and a third light-emitting structure, which are sequentially stacked on a substrate. The RGB micro-light-emitting diode with a reduced unit area can be easily manufactured by forming the corner mesa contact structure on each of the n-type contact electrode layers by etching the vertically-stacked structure, forming contact structures on the n-type contact electrode layers, followed by electrical connection.
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/20 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
4.
PIXEL OF MICRODISPLAY HAVING INTEGRATED CATADIOPTRIC LIGHT EXTRACTION SYSTEM
Disclosed is a unit pixel of a microdisplay having a concave reflector with a center aperture. The light extractor has a protrusion and a bulk portion formed using the same epitaxial growth process. The concave reflector with a center aperture is formed on the protrusion, and epitaxial growth of the light-emitting body is made through the aperture concave reflector. In addition, the light rays reflected by the concave reflector with a center aperture has exit angles that are nearly perpendicular to the exit surface and are thus easily emitted to the outside.
A unit pixel of a Red-Green-Cyan-Blue (RGCB) microdisplay is disclosed. In the unit pixel, sub-pixels that form blue light, green light, cyan light, and red light, are vertically stacked on a growth substrate. Accordingly, the unit pixel area may be reduced, and pixel transfer processing is facilitated.
H10H 20/816 - Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/831 - Electrodes characterised by their shape
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
6.
Pixel for micro-display having vertically stacked sub-pixels
A unit pixel of a microdisplay is disclosed. In the unit pixel, sub-pixels that form blue light, green light, and red light are vertically stacked on a growth substrate. Accordingly, the unit pixel area may be reduced, and pixel transfer processing is facilitated.
H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
H10H 20/811 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
H10H 20/816 - Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
H10H 20/824 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
H10H 20/857 - Interconnections, e.g. lead-frames, bond wires or solder balls
7.
LIGHT-EMITTING DIODE HAVING MULTIPLE TUNNEL JUNCTION STRUCTURES
A light-emitting diode having multiple tunnel junctions is provided. The light-emitting diode can comprise: a common electrode layer; first and second tunnel junction layers respectively arranged on the lower surface and the upper surface of the common electrode layer; a first light-emitting structure arranged on the lower surface of the first tunnel junction layer; and a second light-emitting structure arranged on the upper surface of the second tunnel junction layer. Light-emitting structures for respectively emitting blue and green colors can be arranged on the upper and lower parts of the common electrode layer. Holes are put into a first light-emitting structure and a second light-emitting structure through the common electrode formed as an n-type semiconductor, and thus a current unfolding effect is improved such that light-emitting efficiency becomes better. Since an n-type semiconductor layer can be arranged on the top surface exposed to the outside, concerns for damage in a follow-up process can be reduced.
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
A method of driving a display having a light emitting diode (LED) is provided. A driving pulse of a pulse width modulation method is applied to each pixel by a drive circuit, and a time for illuminating a red light, a blue light, and a green light, which are three primary colors, of each pixel is controlled, thereby controlling the luminance of the pixel.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
9.
LIGHT EMITTING DIODE INCLUDING BURIED P-TYPE CONTACT LAYER
Provided is a light emitting diode including a buried p-type contact layer. Specifically, the light emitting diode comprises a plurality of light emitting structures, each of which has an active layer and different conductive type semiconductor layers formed on opposite surfaces of the active layer; the conductive type semiconductor layers disposed in the regions where the light emitting structures are bonded together are common p- or n-type semiconductor layers and are shared by the respective light emitting structures; and at least one of the plurality of common p-type semiconductor layers has a p-type contact layer buried therein, which has a pattern with a plurality of holes inside. Accordingly, it is possible to improve current spreading within the p-type semiconductor layer, thereby enhancing the electric conductivity of the p-type semiconductor layer and easily implementing a high-luminance light emitting diode.
H01L 33/36 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
10.
Light emitting diode and manufacturing method therefor
A light emitting diode and a manufacturing method therefore are provided. The light emitting diode includes at least: a first light emitting structure, formed on a substrate, in which a first n-GaN layer, a first active layer and a first p-GaN layer are sequentially layered; a first n-type electrode formed on one side of the upper part of the first n-GaN layer; a current diffusion layer, formed on the first light emitting structure, in which at least one hole is arranged; and a second light emitting structure in which a second p-GaN layer, which is formed in a region of a conductive layer in which at least one hole is arranged, and a second active layer and a second n-GaN layer, which are formed on the second p-GaN layer, are sequentially layered.
H01L 33/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 33/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
11.
LIGHT-EMITTING ELEMENT COMPRISING WAVELENGTH CONVERSION STRUCTURE
Provided is a light-emitting element comprising a wavelength conversion structure. Particularly, the light-emitting element comprises a wavelength conversion structure comprising a filter layer, a wavelength conversion layer, and a reflective layer such that a part of light, which has been emitted from a light-emitting structure, is selectively transmitted through the filter layer, and the transmitted light is absorbed by the wavelength conversion layer, is emitted as light that has a wavelength domain, which has been changed through down-conversion of energy, and is mixed with the light emitted from the light-emitting structure, thereby making it possible to easily implement various colors of light, including white light.
Disclosed is a method for a display of a light emitting diode. Provided is a display driving method which applies a driving pulse of a pulse width modulation scheme to each pixel by means of a drive circuit to be thereby capable of controlling the luminance of the pixel by controlling a light emission time for emitting the three primary colors of light: red, blue, and green, for each pixel.
G09G 3/34 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix by control of light from an independent source
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
13.
Light emitting diode having multi-junction structure and method of fabricating the same
Disclosed herein is a light emitting diode having a multi-junction structure and a method of fabricating the same. In the light emitting diode, each light emitting structure has a column shape and includes two light emitting layers centered on a p-type semiconductor layer. In addition, a p-type electrode is formed on a side surface of the p-type semiconductor layer, and a p-type electrode is formed through formation and removal of a sacrificial layer. Through this process, the p-type electrode can be formed as a side electrode.
H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
patents
