There is provided a method for the manufacture of a graphene laminate, the method comprising: providing a growth substrate comprising a support and a first layer provided thereon, the first layer having a growth surface distal from the support, the growth surface having a <111> crystallographic orientation and being formed of either scandium-aluminium oxide or scandium-gallium oxide; and forming a graphene layer structure on the growth surface of the first layer by CVD.
The present invention relates to methods for the growth of a graphene layer structure on a substrate, wherein the substrate has a first surface for contacting a susceptor and a second surface for the formation of a graphene layer structure, wherein the substrate is a laminate wafer comprising a silicon support providing the first surface and a germanium layer providing the second surface: and opto-electronic devices obtainable therefrom.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
There is provided a method for the manufacture of an electronic device, the method comprising: (i) providing a substrate (200) comprising a non-metallic growth surface (200a); (ii) forming a graphene layer structure (205) on and across the growth surface (200a) by CVD; (iii) patterning the graphene layer structure (205), thereby retaining a patterned graphene layer structure (205'), and thereby exposing a first portion of the growth surface (200a'); (iv) directly forming a TMD layer structure (215) on the patterned graphene layer structure (205') and the exposed portion of the growth surface (200a'); (v) patterning the TMD layer structure (215) thereby retaining a patterned TMD layer structure (215') that is on a first portion of the patterned graphene layer structure (205') defining a region of overlap (225), and extends onto the adjacent first portion of the growth surface (200a'); and (vi) forming: (a) a first electrical contact (230) in contact with the patterned graphene layer structure (205'); (b) a second electrical contact (235) in contact with the patterned TMD layer structure (215').
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/267 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups , , , , in different semiconductor regions
A transducer comprising a primary element comprising a magnet configured to provide a magnetic field within a magnetic zone, the magnetic field extending in a magnetic field direction; a secondary element comprising a first graphene sheet located within the magnetic zone; a static portion; and a rotating portion configured to rotate about an axis of rotation relative to the static portion. The rotating portion comprises a first one of a set comprising the primary element and the secondary element; and wherein the static portion comprises a second one of the set; and wherein an axis of rotation of the rotating portion is such that: in a first position of the static portion relative to the rotating portion, the first graphene sheet lies in a first plane that is parallel to the magnetic field direction; and in a second position of the static portion relative to the rotating portion, the first graphene sheet lies in an offset plane that is at an angle to the first plane about the axis of rotation. On deployment of the transducer in a first mode, movement of the rotating portion relative to the static portion causes an electrical potential to be generated in the first graphene sheet thereby converting rotational kinetic energy into electrical potential; and/or on deployment of the transducer in a second mode, electrical potential in the first graphene sheet causes rotation of the rotating portion relative to the static portion thereby converting electrical potential into rotational kinetic energy.
There is provided a graphene substrate comprising: a graphene layer structure directly on a metal oxide layer, said metal oxide layer directly on a support layer; wherein the metal oxide layer has a thickness of less than 5 nm and is selected from the group consisting of Al2O3, HfO2, MgO, MgAl2O4, Ta2O5, Y2O3, ZrO2 and YSZ; and wherein the support layer is BN, AlN, GaN, SiC, diamond, or a combination thereof.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
6.
METHODS FOR THE PROVISION OF A COATED GRAPHENE LAYER STRUCTURE ON A SILICON-CONTAINING WAFER
There is provided a method for the provision of a coated graphene layer structure (410) on a silicon- containing wafer (435), the method comprising: (1) providing a wafer stack (420) comprising, in order, a transparent substrate (400), a nitride layer (405), a graphene layer structure (410) and a dielectric passivation layer (415), wherein the dielectric passivation layer (415) has an exposed upper surface; (2) forming or adhering (300) a further layer (435) onto the exposed upper surface of the dielectric passivation layer (415); and (3) removing the substrate (400) by laser lift-off 305 to expose a surface of the nitride layer (405) distal from the graphene layer structure (410); wherein the nitride layer (405) of the wafer stack (420) comprises a first surface directly adjacent the substrate (400) and a second surface directly adjacent the graphene layer structure (410), wherein the first and second surfaces are each independently formed of aluminium nitride or boron nitride; and wherein: the method further comprises wafer bonding (130, Fig. 2) the exposed surface of the nitride layer to a surface (235b', Fig. 2) of a silicon-containing wafer (235, Fig. 2) after the step (125, Fig. 2) of removing the substrate (225, Fig 2); or the step of forming or adhering comprises wafer bonding (300), and the further layer is a silicon-containing wafer (435). The laminate (440) is suitable for the manufacture of an electronic device (460).
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
7.
A METHOD FOR THE MANUFACTURE OF A GRAPHENE-CONTAINING LAMINATE
There is provided a method for the manufacture of a graphene-containing laminate (240), the method comprising: (i) providing a first wafer (220) comprising a first layer (205) on a first silicon support (200), wherein the first layer (205) is a dielectric layer and has an exposed growth surface (205') distal from the first silicon support (200), wherein the first layer (205) has a first region (205c) extending at least 2 nm down from the exposed growth surface (205') which satisfies the following: a) a dislocation density of less than 5,000 cm–2 as measured by TEM; and b) a surface roughness (Ra) of less than 1 nm as measured by AFM; (ii) providing a second wafer (235) comprising a second layer (230), wherein the second layer (230) has an exposed contact surface (230'); (iii) forming a graphene layer structure (210) on the exposed growth surface of the first layer by CVD; (iv) wafer-bonding the first wafer (220) to the exposed contact surface (230') of the second layer (230) to sandwich the graphene layer structure (210) between the first silicon support (200) and the second layer (230); and (v) removing the first silicon support (200) to leave a retained portion of the first layer (205) formed from the first region (205c) and having a thickness of less than 20 nm.
The present disclosure relates to a method of patterning a two-dimensional material for use in the manufacture of an electronic device, the method comprising: (i) providing a two-dimensional material layer (205) on a surface of a substrate (200); (ii) forming a molybdenum oxide layer (215) on the two-dimensional material layer (205) to provide a first stack comprised of the two-dimensional material and molybdenum oxide layers (205, 215), the molybdenum oxide layer (215) having a thickness of at least 0.1 nm; (iii) patterning the first stack to provide one or more patterned second stacks on the substrate; and (iv) etching at least a portion of the molybdenum oxide layer (215) from one or more of the patterned second stacks to expose an underlying portion of the two-dimensional material layer (205). The method is particularly suitable in the manufacture of gas sensors and biosensors.
G01N 27/414 - Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
B82Y 15/00 - Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/778 - Field-effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT
There is provided a photodetector comprising: a substrate having a first channel of waveguide material embedded therein, the substrate and the waveguide material together providing a substantially flat upper surface: a first insulative layer on and across the upper surface: a graphene layer arranged on the first insulative layer and over the first channel of waveguide material: and at least two ohmic contacts, each provided in contact with the graphene layer and arranged on either side of the first channel of waveguide material: wherein the first insulative layer comprises silicon nitride and/or an oxide of one or more of aluminium, hafnium and magnesium.
H01L 31/0232 - Optical elements or arrangements associated with the device
G02B 6/43 - Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
10.
AN ELECTRO-OPTIC MODULATOR AND METHODS OF FORMING THE SAME
There is provided an electro-optic modulator comprising: a substrate having a first channel of waveguide material embedded therein, the substrate and the waveguide material together providing a substantially flat upper surface, a first insulative layer on and across the upper surface; a graphene layer arranged on the first insulative layer and over at least a first portion of the first channel of waveguide material; and a second insulative layer provided on and across the graphene layer; wherein the graphene layer provides a first electrode, and wherein a, preferably non-graphene, second electrode is either: (i) provided on the second insulative layer at least overlapping the first portion of the first channel of waveguide material, or (ii) provided within the substrate at least underlapping the first portion of the first channel of waveguide material.
G02F 1/03 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect
G02F 1/00 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
There is provided a method of forming partially-fluorinated-graphene on a substrate, the method comprising: (a) providing a crystalline substrate having a surface formed of a first metal oxide, and optionally treating the surface of the substrate with a fluorine source; (b) forming graphene on the surface of the substrate by CVD; and (c) treating the graphene-coated surface of the substrate with a fluorine source thereby partially-fluorinating the graphene. There is also provided a method of forming graphene on a substrate, the method comprising: (a) providing a crystalline substrate having a surface formed of a first metal oxide; (b) treating the surface of the substrate with a fluorine source; and (c) forming graphene on the fluorinated surface of the substrate by CVD.
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
A method of forming a graphene layer structure, the method comprising: providing a growth substrate having a growth surface; and forming a graphene layer structure on the growth surface by CVD; wherein the growth surface is formed of a material selected from the group consisting of: YSZ, MgAl2O4, YAIO3, CaF2 and LaF3.
The present invention relates to a method of forming a graphene layer structure, the method comprising: providing a growth substrate comprising a first layer on a support layer; and forming a graphene layer structure on a growth surface of the first layer by CVD; wherein the first layer is formed of scandium oxide.
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
A wafer for the CVD growth of uniform graphene and method of manufacture thereof There is provided a wafer for the CVD growth of uniform graphene at a temperature in excess of 700° C., the wafer comprising in order: a planar silicon substrate, an insulating layer provided across the silicon substrate, and a barrier layer provided across the insulating layer, wherein the insulating layer is a silicon nitride and/or aluminium nitride layer, and wherein the barrier layer has a constant thickness of 50 nm or less and provides a growth surface for the CVD growth of uniform graphene.
A graphene Hall sensor for operation at cryogenic temperatures is provided. The graphene Hall sensor comprises a substrate, a graphene sheet, a dielectric layer, a first pair of electrical contacts, and a second pair of electrical contacts. The graphene sheet is provided on the substrate. The dielectric layer is provided on the graphene sheet. The graphene sheet and the dielectric layer share a continuous outer edge surface. The first pair of electrical contacts are in electrical contact with the graphene sheet and spaced apart along a first direction. The second pair of electrical contacts are in electrical contact with the graphene sheet and spaced apart along a second direction. The first direction is perpendicular to the second direction, wherein a path along the first direction between the first pair of electrical contacts crosses a path along the second direction between the second pair of electrical contacts. The graphene sheet has a sheet carrier density in the range of 2×1011 cm−2 to 1×1013 cm−2.
A method for the manufacture of an improved graphene substrate and applications therefor There is provided a method (100) for the manufacture of an electronic device precursor, the method comprising: (i) providing a silicon wafer (200) having a growth surface (205); (ii) forming (105) an insulative layer (210) on the growth surface (205) having a thickness of from 1 nm to 10 nm, preferably 2 nm to 1 nm; (iii) forming (110) a graphene monolayer or multi-layer structure (215) on the insulative layer (210); (iv) optionally forming (115, 120) one or more further layers (220) and/or electrical contacts (225, 230) on the graphene monolayer or multi-layer structure (215); (v) forming (125) a polymer coating (235) over the graphene monolayer or multi-layer structure (215) and any further layers (115) and/or electrical contacts (225, 230); (vi) thinning (130) the silicon wafer (200), or removing the silicon wafer (200) to provide an exposed surface of the insulative layer (210), by etching with an etchant, wherein the silicon wafer (200) is optionally subjected to a grinding step before etching; and (vii) optionally dissolving away (135) the polymer coating (235); wherein the insulative layer (210) and the polymer coating (235) are resistant to etching by the etchant. The resulting conductive graphene substrate can be used in (organic) LEDs, capacitor devices, tunnel FETs and Hall sensors.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
The present invention provides a method for the formation of graphene on a silicon substrate, the method comprising: (i) providing a silicon wafer having a growth surface which is free of native oxides, in a reaction chamber; (ii) nitriding the growth surface with a nitrogen-containing gas with the wafer at a temperature in excess of 800° C., to thereby form a silicon nitride layer; and (iii) forming a graphene mono-layer or multiple layer structure on the silicon nitride layer; wherein the method is performed in-situ and sequentially in the reaction chamber. The present invention also provides a graphene-on-silicon layer structure having an intervening silicon nitride layer and free of any intervening native oxide layer.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
18.
Graphene transistor and method of manufacturing a graphene transistor
The present invention provides a method of manufacturing a graphene transistor 101, the method comprising: (a) providing a substrate having a substantially flat surface, wherein the surface comprises an insulating region 110 and an adjacent semiconducting region 105; (b) forming a graphene layer structure 115 on the surface, wherein the graphene layer structure is disposed on and across a portion of both the insulating region and the adjacent semiconducting region; (c) forming a layer of dielectric material 120 on a portion of the graphene layer structure which is itself disposed on the semiconducting region 105; and (d) providing: a source contact 125 on a portion of the graphene layer structure which is itself disposed on the insulating region 110; a gate contact 130 on the layer of dielectric material 120 and above a portion of the graphene layer structure which is itself disposed on the semiconducting region 105; and a drain contact 135 on the semiconducting region 105 of the substrate surface.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
The present invention provides method for forming a diode, the method comprises providing a first graphene layer structure on a first substrate; providing a second graphene layer structure on a second substrate; treating the first graphene layer structure with an oxidant to form a graphene oxide surface thereon; and aligning the second graphene layer structure against the graphene oxide surface of the first graphene layer structure.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
There is provided a method 100 of producing an electronic device precursor 200, the method 100 comprising: (i) providing 105 a plasma-etchable layer structure 210 on a plasma-resistant substrate 205, wherein the layer structure 210 has an exposed upper surface; (ii) patterning 110 a plasma-resistant dielectric 215 onto the exposed upper surface to form an intermediate having at least one covered region and at least one uncovered region of the layer structure 210; (iii) subjecting the intermediate to plasma etching 115, whereby the at least one uncovered region of the layer structure 210 is etched away to form at least one covered region of the layer structure 210 having an exposed edge surface; (iv) forming 120 an ohmic contact 220a, 220b in direct contact with a portion of the exposed edge surface; wherein the plasma-etchable layer structure 210 comprises one or more graphene layers which extend across the covered regions of the layer structure 210 to the exposed edge surface.
The present invention provides a graphene-containing laminate comprising, in order: a substrate; a graphene layer structure; a first metal oxide layer formed of a first metal oxide, wherein the first metal oxide is a transition metal oxide; and a second metal oxide layer formed of a second metal oxide; wherein the first metal oxide layer has a thickness of from 0.1 nm to 5 nm; and wherein the first metal oxide layer has a work function of 5 eV or more.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
According to a first aspect of the disclosure, an integrated frequency multiplier circuit is provided. The circuit comprises a substrate, a strip of graphene, first and second electrode, a dielectric layer, a frequency input electrode, and a frequency output electrode. The strip of graphene has a uniform width provided on the substrate, the strip having a width x and a length y extending from a first end to a second end. The first and second electrodes are provided in electrical contact with the strip of graphene at the first and second ends of the strip of graphene respectively. The dielectric layer is provided on the strip of graphene, wherein the dielectric layer is provided across the width x of the strip of graphene. The frequency input electrode is formed on the dielectric layer, wherein the frequency input electrode is provided across the width x of the strip of graphene. The frequency input electrode is provided over the strip of graphene at a location closer to the first end of the strip of graphene than the second end. The frequency output electrode is provided in electrical contact with the strip of graphene at a location along the length of the strip of graphene between the second electrode and the frequency input electrode, spaced apart from the second electrode.
H03B 19/14 - Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
H03K 5/00 - Manipulation of pulses not covered by one of the other main groups of this subclass
The present invention relates to a method of forming a graphene-containing laminate, the method comprising: providing a first graphene layer structure on a substrate; forming a first metal oxide layer on the graphene layer structure by depositing and then oxidising a layer of metal; forming a second metal oxide layer on the first metal oxide layer; and forming a second graphene layer structure on the second metal oxide layer by CVD.
G02F 1/00 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics
G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour
24.
A TRANSISTOR AND A METHOD FOR THE MANUFACTURE OF A TRANSISTOR
There is provided a transistor comprising: a graphene layer structure provided on a non-metallic surface of a substrate, the graphene layer structure having an insulating cap; a source contact provided in contact with a first edge of the graphene layer structure; an insulator provided in contact with an opposite, second edge of the graphene layer structure; a drain contact provided in contact with the insulator, whereby there is a distance of least separation between the drain contact and the graphene layer structure along the second edge of the graphene layer structure and through the insulator; and a gate contact provided (i) over the graphene layer structure and separated therefrom by the insulating cap and/or (ii) under the graphene layer structure and separated therefrom by substrate.
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
There is provided a graphene sensor, preferably a graphene biosensor, comprising: a graphene layer structure provided on a non-metallic surface of a substrate, the graphene layer structure having an exposed, functionalised sample surface for receiving a sample for testing; first and second electrical contacts provided in contact with the graphene layer structure, and arranged on opposite sides of the functionalised sample surface; wherein each electrical contact is separated from the functionalised sample surface by an adjacent metal oxide layer, and wherein each electrical contact and adjacent metal oxide layer are capped with a passivating layer, whereby a sample for testing applied to the sample surface cannot contact the electrical contacts; and wherein the functionalised sample surface is devoid of photoresist.
There is provided a biosensor device comprising: a doped graphene layer structure having at least first and second electrical contacts and a sample-surface between said electrical contacts for receiving an analyte composition to be tested; wherein the doped graphene layer structure is doped with nitrogen and/or phosphorus atoms in an amount of from 1 at% to 10 at%; and wherein the sample-surface is functionalised with a plurality of analyte-receptors, each analyte-receptor being bound to a nitrogen or phosphorus atom of the doped graphene layer structure by a covalent linker moiety.
A method of field mapping a cell under load is provided. The method comprises the steps of: providing a cell; providing a Hall effect sensor comprising a graphene conductor for measuring a magnetic field; positioning the Hall effect sensor at a first position adjacent a face of the cell; applying a load to the cell; and measuring an output of the Hall effect sensor.
G01R 15/20 - Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices
G01R 31/36 - Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
G01R 31/3828 - Arrangements for monitoring battery or accumulator variables, e.g. SoC using current integration
G01R 33/00 - Arrangements or instruments for measuring magnetic variables
A magnetoresistive sensor is provided. The magnetoresistive sensor comprises a substrate having a layer structure thereon. The layer structure comprises a lower layer, and an upper layer. The lower layer is provided on the substrate, wherein the lower layer comprises one or more graphene layers which extend across the lower layer. The upper layer is provided on the lower layer and formed of a dielectric material. The lower and upper layers of the layer structure share one or more continuous edge surfaces. The magnetoresistive sensor further comprises a first electrical contact provided adjacent to the layer structure such that the first electrical contact is in direct contact with the one or more graphene layers via one of the one or more continuous edge surfaces, a second electrical contact provided adjacent to the layer structure such that the second electrical contact is in direct contact with the one or more graphene layers via one of the one or more continuous edge surfaces, and a continuous air-resistant coating layer covering the layer structure.
There is provided a method of producing an electronic device precursor, in particular a method which comprises forming ohmic contacts on the substrate, each in contact with an edge portion of a dielectric-material-capped graphene layer structure, and coating the contacts, and at least one region of the capped structure, with a further dielectric material. The present invention also provides an electronic device precursor comprising a dielectric-material-capped graphene layer structure. The electronic device precursor is preferably for a Hall effect sensor.
There is provided a method of manufacturing a transistor, the method comprising: (a) providing a substrate having a semiconductor surface; (b) providing a graphene layer structure on a first portion of the semiconductor surface, wherein the graphene layer structure has a thickness of n graphene monolayers, wherein n is at least 2; (c) etching a first portion of the graphene layer structure to reduce the thickness of the graphene layer structure in said first portion to from n−1 to 1 graphene monolayers; (d) forming a layer of dielectric material on the first portion of the graphene layer structure; and (e) providing: a source contact on a second portion of the graphene layer structure; a gate contact on the layer of dielectric material; and a drain contact on a second portion of the semiconductor surface of the substrate.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
01 - Chemical and biological materials for industrial, scientific and agricultural use
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Chemicals for use in industry, science and photography, as
well as in agriculture, horticulture and forestry;
unprocessed artificial resins, unprocessed plastics; fire
extinguishing and fire prevention compositions; tempering
and soldering preparations; substances for tanning animal
skins and hides; adhesives for use in industry; putties and
other paste fillers; compost, manures, fertilizers;
biological preparations for use in industry and science;
graphene; graphene composite materials; single-layer
materials and 2D materials, namely graphene, borophene,
silicene, germane, boron nitride, transitional metal
dichalcogenides; carbon; graphite; graphane; graphene oxide;
functionalised carbon materials; conjugated carbon
materials; carbon nanotubes; graphene flakes; graphene
powder; nanostructured morphologies of carbon; reagents for
biosensing; all the aforesaid goods for use in industry and
manufacture. Scientific, research, navigation, surveying, photographic,
cinematographic, audiovisual, optical, weighing, measuring,
signalling, detecting, testing, inspecting, life-saving and
teaching apparatus and instruments; apparatus and
instruments for conducting, switching, transforming,
accumulating, regulating or controlling the distribution or
use of electricity; apparatus and instruments for recording,
transmitting, reproducing or processing sound, images or
data; recorded and downloadable media, computer software,
blank digital or analogue recording and storage media;
mechanisms for coin-operated apparatus; cash registers,
calculating devices; computers and computer peripheral
devices; diving suits, divers' masks, ear plugs for divers,
nose clips for divers and swimmers, gloves for divers,
breathing apparatus for underwater swimming;
fire-extinguishing apparatus; graphene integrated circuit;
graphene electronic chips; graphene sensors; apparatus and
instruments for conducting, switching, transforming,
accumulating, regulating or controlling the distribution or
use of electricity; apparatus and instruments for recording,
transmitting, reproducing or processing sound, images or
data; apparatus and instruments for scientific purposes;
batteries; battery chargers for use with telephones; cables,
electric; communication software; component parts for
antennas; computer hardware; computer software; conductors,
electric; current rectifiers; data processing systems;
electrical reactors; electronic components; electronic data
recorders; electronic meters; encoders; fault current
breakers; graphical user interface software; headphones;
headsets for use with computers; instructional apparatus;
interfaces for computers; magnetic and optical data
carriers; optoelectronic apparatus and instruments, namely,
solar cells, photodiodes, optical sensors and modulators;
microphones; speakers; sensors for use in the control of
motors; capacitors; antennas; graphene antennas; graphene
transistors; graphene field-effect transistor (FET);
hall-effect sensors; cryogenic sensors; magnetic field
sensors; graphene hall effect sensors; graphene temperature
sensors; graphene photonic devices; graphene modulators;
graphene detectors; graphene light-sensitive devices;
graphene light-emitting devices; graphene solar cells;
graphene solar panels; graphene touch screens; graphene
battery; graphene solar and silicone wafer; graphene sheets,
namely single-atom-thick layers of carbon atoms arranged in
a crystalline solid [crystalline semi-conductor materials];
graphene recording substrates [magnetic] and [optical];
graphene heterostructures, namely a heterostructure that
includes graphene having and interface with a semiconductor;
graphene diode; environmental monitoring sensors; industrial
process control sensors; sensors for pharmaceutical
manufacturing control; quality control sensors; sensors for
the detection of hazardous environments; parts and fittings
for all the aforesaid goods. Surgical, medical, dental and veterinary apparatus and
instruments; artificial limbs, eyes and teeth; orthopedic
articles; suture materials; therapeutic and assistive
devices adapted for persons with disabilities; massage
apparatus; apparatus, devices and articles for nursing
infants; apparatus for screening, monitoring, therapeutic or
diagnostic medical purposes; apparatus for screening,
monitoring, therapeutic or diagnostic veterinary purposes;
biosensors [measurement apparatus], for medical purposes;
organ-on-a-chip; graphene biosensors [measurement
apparatus], for medical purposes; medical bioelectronic
devices; hearing aids; medical biosensors for immunological,
molecular or enzymatic tests; medical biosensors for the
detection of small molecules; biosensor analyser for medical
use; parts and fittings for all the aforesaid goods. Treatment of single-layer materials and 2-dimensional
materials, namely crystalline solids consisting of a single
layer of atoms; recycling of waste and trash; air
purification and treatment of water; printing services; food
and drink preservation; treatment and processing of
materials using chemicals; processing of chemicals;
processing of materials; treatment of materials for use in
connection with electronic devices; treatment of materials
using graphene; custom manufacturing and processing relating
to the formation of graphene; custom manufacturing and
processing relating to the formation of 2D materials;
application of graphene coatings using vapour deposition
techniques; application of graphene coatings using chemical
vapour deposition techniques; the propagation of graphene
layers on sacrificial substrates for subsequent transfer to
other materials, in particular silicon; exfoliation of
graphene; graphene foundry services; custom manufacture of
graphene-based apparatus and instruments; foundry services;
information, consultancy and advisory services relating to
all the aforesaid services. Scientific and technological services and research and
design relating thereto; industrial analysis, industrial
research and industrial design services; quality control and
authentication services; design and development of computer
hardware and software; scientific analysis; technological
and scientific advisory and consultancy services relating to
the application and uses of graphene and two dimensional
materials; technological and scientific advisory and
consultancy services relating to electronic devices;
technological and scientific advisory and consultancy
services relating to manufacture; technological and
scientific advisory and consultancy services relating to
manufacture of devices incorporating 2D-materials or
processes associated with the manufacture of 2D-materials;
advisory services relating to computer software; advisory
services relating to material testing; analysis of technical
data; biological analysis; biochemical research; biochemical
analysis; bioelectronic analysis; analysis of biological
signals; calibration [measuring]; chemical research;
chemical research and analysis; chemical testing; chemistry
services; consultancy relating to technical and scientific
analysis; development and testing of computing methods,
algorithms and software for processing telecommunication and
navigation signals; development of computer hardware;
electronic data storage; maintenance of software for
computer systems; material testing; material testing and
evaluation; design and development of electronic devices;
design and development of graphene-based electronic devices;
design and development of biosensors; design and development
of medical or veterinary diagnostic or screening components
or equipment; functionalisation of graphene; technological
and scientific advisory and consultancy services relating to
generating electric signals from captured molecules;
information, consultancy and advisory services relating to
all the aforesaid services.
32.
METHODS FOR THE GROWTH OF A GRAPHENE LAYER STRUCTURE ON A SUBSTRATE AND AN OPTO-ELECTRONIC DEVICE
The present invention relates to methods for the growth of a graphene layer structure on a substrate, wherein the substrate has a first surface for contacting a susceptor and a second surface for the formation of a graphene layer structure, wherein the substrate is a laminate wafer comprising a silicon support providing the first surface and a germanium layer providing the second surface; and opto-electronic devices obtainable therefrom.
01 - Chemical and biological materials for industrial, scientific and agricultural use
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Chemicals for use in industry, science and photography, as
well as in agriculture, horticulture and forestry;
unprocessed artificial resins, unprocessed plastics; fire
extinguishing and fire prevention compositions; tempering
and soldering preparations; substances for tanning animal
skins and hides; adhesives for use in industry; putties and
other paste fillers; compost, manures, fertilizers;
biological preparations for use in industry and science;
graphene; graphene composite materials; single-layer
materials and 2D materials, namely graphene, borophene;
carbon; graphite; graphane; graphene oxide; functionalised
carbon materials; conjugated carbon materials; carbon
nanotubes; graphene flakes; graphene powder; nanostructured
morphologies of carbon; reagents for biosensing; all the
aforesaid goods for use in industry and manufacture. Scientific, research, navigation, surveying, photographic,
cinematographic, audiovisual, optical, weighing, measuring,
signalling, detecting, testing, inspecting, life-saving and
teaching apparatus and instruments; apparatus and
instruments for conducting, switching, transforming,
accumulating, regulating or controlling the distribution or
use of electricity; apparatus and instruments for recording,
transmitting, reproducing or processing sound, images or
data; recorded and downloadable media, computer software,
blank digital or analogue recording and storage media;
mechanisms for coin-operated apparatus; cash registers,
calculating devices; computers and computer peripheral
devices; diving suits, divers' masks, ear plugs for divers,
nose clips for divers and swimmers, gloves for divers,
breathing apparatus for underwater swimming;
fire-extinguishing apparatus; graphene solid-state
electronic devices; graphene sensors; apparatus and
instruments for conducting, switching, transforming,
accumulating, regulating or controlling the distribution or
use of electricity; apparatus and instruments for recording,
transmitting, reproducing or processing sound, images or
data; apparatus and instruments for scientific purposes;
batteries; battery chargers for use with telephones; cables,
electric; communication software; component parts for
antennas; computer hardware; computer software; conductors,
electric; current rectifiers; data processing systems;
electrical reactors; electronic components; electronic data
recorders; electronic meters; encoders; fault current
breakers; graphical user interface software; headphones;
headsets for use with computers; instructional apparatus;
interfaces for computers; magnetic and optical data
carriers; optoelectronics, namely solar cells, photodiodes
and optical fibres; microphones; speakers; sensors for use
in the control of motors; capacitors; antennas; graphene
antennas; graphene transistors; graphene field-effect
transistor (FET); hall-effect sensors; cryogenic sensors;
magnetic field sensors; graphene hall effect sensors;
graphene temperature sensors; graphene photonics devices;
graphene modulators; graphene detectors; graphene
light-sensitive devices; graphene light-emitting devices;
graphene solar cells; graphene solar panels; graphene touch
screens; graphene battery; graphene solar and silicone
wafer; graphene sheets, namely single-atom-thick layers of
carbon atoms arranged in a crystalline solid (crystalline
semi-conductor materials); graphene recording substrates
[magnetic] and [optical]; graphene heterostructures, namely
a heterostructure that includes graphene having and
interface with a semiconductor; graphene diode;
environmental monitoring sensors; industrial process control
sensors; sensors for pharmaceutical manufacturing control;
quality control sensors; sensors for hazardous environments;
parts and fittings for all the aforesaid goods. Surgical, medical, dental and veterinary apparatus and
instruments; artificial limbs, eyes and teeth; orthopedic
articles; suture materials; therapeutic and assistive
devices adapted for persons with disabilities; massage
apparatus; apparatus, devices and articles for nursing
infants; apparatus for screening, monitoring, therapeutic or
diagnostic medical purposes; apparatus for screening,
monitoring, therapeutic or diagnostic veterinary purposes;
biosensors (measurement apparatus), for medical purposes;
organ-on-a-chip; graphene biosensors; medical bioelectronic
devices; hearing aids; sensors for detection of hazardous
environments; medical biosensors for immunological,
molecular or enzymatic tests; medical biosensors for the
detection of small molecules; handheld biosensor reader;
parts and fittings for all the aforesaid goods. Treatment of single-layer materials and 2-dimensional
materials, namely crystalline solids consisting of a single
layer of atoms; recycling of waste and trash; air
purification and treatment of water; printing services; food
and drink preservation; treatment and processing of
materials using chemicals; processing of chemicals;
processing of materials; treatment of materials for use in
connection with electronic devices; treatment of materials
using graphene; custom manufacturing and processing relating
to the formation of graphene; custom manufacturing and
processing relating to the formation of 2D materials;
application of graphene coatings using vapour deposition
techniques; application of graphene coatings using chemical
vapour deposition techniques; the propagation of graphene
layers on sacrificial substrates for subsequent transfer to
other materials, in particular silicon; exfoliation of
graphene; graphene foundry services; custom manufacture of
graphene-based apparatus and instruments; foundry services;
information, consultancy and advisory services relating to
all the aforesaid services. Scientific and technological services and research and
design relating thereto; industrial analysis, industrial
research and industrial design services; quality control and
authentication services; design and development of computer
hardware and software; scientific analysis; technological
and scientific advisory and consultancy services relating to
the application and uses of graphene and two dimensional
materials; technological and scientific advisory and
consultancy services relating to electronic devices;
technological and scientific advisory and consultancy
services relating to manufacture; technological and
scientific advisory and consultancy services relating to
manufacture of devices incorporating 2D materials or
processes associated with the manufacture of 2D-materials;
advisory services relating to computer software; advisory
services relating to material testing; analysis of technical
data; biological analysis; biochemical research; biochemical
analysis; bioelectronic analysis; analysis of biological
signals; calibration [measuring]; chemical research;
chemical research and analysis; chemical testing; chemistry
services; consultancy relating to technical and scientific
analysis; development and testing of computing methods,
algorithms and software for processing telecommunication and
navigation signals; development of computer hardware;
electronic data storage; maintenance of software for
computer systems; material testing; material testing and
evaluation; design and development of electronic devices;
design and development of graphene-based electronic devices;
design and development of biosensors; design and development
of medical or veterinary diagnostic or screening components
or equipment; product development relating to chemical
functionalisation of graphene; technological and scientific
advisory and consultancy services relating to generating
electric signals from captured molecules; information,
consultancy and advisory services relating to all the
aforesaid services.
34.
A GRAPHENE SUBSTRATE AND METHOD OF FORMING THE SAME
01 - Chemical and biological materials for industrial, scientific and agricultural use
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Chemicals for use in industry, science and photography, as
well as in agriculture, horticulture and forestry;
unprocessed artificial resins, unprocessed plastics; fire
extinguishing and fire prevention compositions; tempering
and soldering preparations; substances for tanning animal
skins and hides; adhesives for use in industry; putties and
other paste fillers; compost, manures, fertilizers;
biological preparations for use in industry and science;
graphene; graphene composite materials; single-layer
materials and 2D materials, namely graphene, borophene;
carbon; graphite; graphane; graphene oxide; functionalised
carbon materials; conjugated carbon materials; carbon
nanotubes; graphene flakes; graphene powder; nanostructured
morphologies of carbon; reagents for biosensing; all the
aforesaid goods for use in industry and manufacture. Scientific, research, navigation, surveying, photographic,
cinematographic, audiovisual, optical, weighing, measuring,
signalling, detecting, testing, inspecting, life-saving and
teaching apparatus and instruments; apparatus and
instruments for conducting, switching, transforming,
accumulating, regulating or controlling the distribution or
use of electricity; apparatus and instruments for recording,
transmitting, reproducing or processing sound, images or
data; recorded and downloadable media, computer software,
blank digital or analogue recording and storage media;
mechanisms for coin-operated apparatus; cash registers,
calculating devices; computers and computer peripheral
devices; diving suits, divers' masks, ear plugs for divers,
nose clips for divers and swimmers, gloves for divers,
breathing apparatus for underwater swimming;
fire-extinguishing apparatus; graphene solid-state
electronic devices; graphene sensors; apparatus and
instruments for conducting, switching, transforming,
accumulating, regulating or controlling the distribution or
use of electricity; apparatus and instruments for recording,
transmitting, reproducing or processing sound, images or
data; apparatus and instruments for scientific purposes;
batteries; battery chargers for use with telephones; cables,
electric; communication software; component parts for
antennas; computer hardware; computer software; conductors,
electric; current rectifiers; data processing systems;
electrical reactors; electronic components; electronic data
recorders; electronic meters; encoders; fault current
breakers; graphical user interface software; headphones;
headsets for use with computers; instructional apparatus;
interfaces for computers; magnetic and optical data
carriers; optoelectronics, namely, solar cells, photodiodes
and optical fibres; microphones; speakers; sensors for use
in the control of motors; capacitors; antennas; graphene
antennas; graphene transistors; graphene field-effect
transistor (FET); hall-effect sensors; cryogenic sensors;
magnetic field sensors; graphene hall effect sensors;
graphene temperature sensors; graphene photonics devices;
graphene modulators; graphene detectors; graphene
light-sensitive devices; graphene light-emitting devices;
graphene solar cells; graphene solar panels; graphene touch
screens; graphene battery; graphene solar and silicone
wafer; graphene sheets, namely single-atom-thick layers of
carbon atoms arranged in a crystalline solid [crystalline
semi-conductor materials]; graphene recording substrates
[magnetic] and [optical]; graphene heterostructures, namely
a heterostructure that includes graphene having an interface
with a semiconductor; graphene diode; environmental
monitoring sensors; industrial process control sensors;
sensors for pharmaceutical manufacturing control; quality
control sensors; sensors for hazardous environments; sensors
for detection of hazardous environments; electronic sensors
for measuring solar radiation; parts and fittings for all
the aforesaid goods. Surgical, medical, dental and veterinary apparatus and
instruments; artificial limbs, eyes and teeth; orthopedic
articles; suture materials; therapeutic and assistive
devices adapted for persons with disabilities; massage
apparatus; apparatus, devices and articles for nursing
infants; apparatus for screening, monitoring, therapeutic or
diagnostic medical purposes; apparatus for screening,
monitoring, therapeutic or diagnostic veterinary purposes;
biosensors [measurement apparatus], for medical purposes;
organ-on-a-chip; graphene biosensors [measurement
apparatus], for medical purposes; medical bioelectronic
devices; hearing aids; medical biosensors for immunological,
molecular or enzymatic tests; medical biosensors for the
detection of small molecules; handheld biosensor readers;
parts and fittings for all the aforesaid goods. Treatment of materials; recycling of waste and trash; air
purification and treatment of water; printing services; food
and drink preservation; treatment and processing of
materials using chemicals; processing of chemicals;
processing of materials; treatment of materials for use in
connection with electronic devices; treatment of materials
using graphene; custom manufacturing and processing relating
to the formation of graphene; custom manufacturing and
processing relating to the formation of 2D materials;
application of graphene coatings using chemical vapour
deposition techniques; formation of graphene by chemical
vapour deposition; the propagation of graphene layers on
sacrificial substrates for subsequent transfer to other
materials, in particular silicon; exfoliation of graphene;
graphene foundry services; custom manufacturing services;
foundry services; information, consultancy and advisory
services relating to all the aforesaid services. Scientific and technological services and research and
design relating thereto; industrial analysis, industrial
research and industrial design services; quality control and
authentication services; design and development of computer
hardware and software; scientific analysis; technological
and scientific advisory and consultancy services relating to
the application and uses of graphene and two dimensional
materials; technological and scientific advisory and
consultancy services relating to electronic devices;
technological and scientific advisory and consultancy
services relating to manufacture; technological and
scientific advisory and consultancy services relating to
manufacture of devices incorporating 2D-materials or
processes associated with the manufacture of 2D-materials;
advisory services relating to computer software; advisory
services relating to material testing; analysis of technical
data; biological analysis; biochemical research; biochemical
analysis; bioelectronic analysis; analysis of biological
signals; calibration [measuring]; chemical research;
chemical research and analysis; chemical testing; chemistry
services; consultancy relating to technical and scientific
analysis; development and testing of computing methods,
algorithms and software for processing telecommunication and
navigation signals; development of computer hardware;
electronic data storage; maintenance of software for
computer systems; material testing; material testing and
evaluation; design and development of electronic devices;
design and development of graphene-based electronic devices;
design and development of biosensors; design and development
of medical or veterinary diagnostic or screening components
or equipment; functionalisation of graphene; technological
and scientific advisory and consultancy services relating to
generating electric signals from captured molecules;
information, consultancy and advisory services relating to
all the aforesaid services.
A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
A transducer comprising a primary element comprising a magnet configured to provide a magnetic field within a magnetic zone, the magnetic field extending in a magnetic field direction; a secondary element comprising a first graphene sheet located within the magnetic zone; a static portion; and a rotating portion configured to rotate about an axis of rotation relative to the static portion. The rotating portion comprises a first one of a set comprising the primary element and the secondary element; and wherein the static portion comprises a second one of the set; and wherein an axis of rotation of the rotating portion is such that: in a first position of the static portion relative to the rotating portion, the first graphene sheet lies in a first plane that is parallel to the magnetic field direction; and in a second position of the static portion relative to the rotating portion, the first graphene sheet lies in an offset plane that is at an angle to the first plane about the axis of rotation. On deployment of the transducer in a first mode, movement of the rotating portion relative to the static portion causes an electrical potential to be generated in the first graphene sheet thereby converting rotational kinetic energy into electrical potential; and/or on deployment of the transducer in a second mode, electrical potential in the first graphene sheet causes rotation of the rotating portion relative to the static portion thereby converting electrical potential into rotational kinetic energy.
G01H 11/02 - Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by magnetic means, e.g. reluctance
38.
A METHOD OF MANUFACTURING A LIGHT-EMITTING DEVICE AND A LIGHT-EMITTING DEVICE
There is provided a method of manufacturing a light emitting device, the method comprising: (a) forming a graphene layer structure (210) on a non-metallic substrate (205), wherein the graphene layer structure has a surface having at least three surface portions; (b) forming a first layer (215) of dielectric material on a first surface portion of the graphene layer structure; (c) forming a light emitting structure (220, 225, 230) on a second surface portion of the graphene layer structure; (d) forming a second layer (250) of dielectric material on a third surface portion of the graphene layer structure; and (e) providing: a source contact (235) on the second layer of dielectric material; a gate contact (240) on the first layer of dielectric material; and a drain contact (245) on the light emitting structure.
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
39.
AN ELECTRO-OPTIC MODULATOR AND METHODS OF FORMING THE SAME
There is provided an electro-optic modulator comprising: a substrate having a first channel of waveguide material embedded therein, the substrate and the waveguide material together providing a substantially flat upper surface, a first insulative layer on and across the upper surface; a graphene layer arranged on the first insulative layer and over at least a first portion of the first channel of waveguide material; and a second insulative layer provided on and across the graphene layer; wherein the graphene layer provides a first electrode, and wherein a, preferably non-graphene, second electrode is either: (i) provided on the second insulative layer at least overlapping the first portion of the first channel of waveguide material, or (ii) provided within the substrate at least underlapping the first portion of the first channel of waveguide material.
G02F 1/03 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
G02F 1/00 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics
There is provided a photodetector comprising: a substrate having a first channel of waveguide material embedded therein, the substrate and the waveguide material together providing a substantially flat upper surface; a first insulative layer on and across the upper surface; a graphene layer arranged on the first insulative layer and over the first channel of waveguide material; and at least two ohmic contacts, each provided in contact with the graphene layer and arranged on either side of the first channel of waveguide material; wherein the first insulative layer comprises silicon nitride and/or an oxide of one or more of aluminium, hafnium and magnesium.
H01L 31/09 - Devices sensitive to infrared, visible or ultra- violet radiation
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
G02F 1/03 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect
G02F 1/035 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect in an optical waveguide structure
G02F 1/00 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics
H01L 31/0232 - Optical elements or arrangements associated with the device
G02B 6/42 - Coupling light guides with opto-electronic elements
10 organic compound; wherein the organic compound is branched such that the organic compound has at least three methyl groups; and wherein the organic compound consists of carbon and hydrogen and, optionally, oxygen, fluorine, chlorine and/or bromine.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
40 - Treatment of materials; recycling, air and water treatment,
01 - Chemical and biological materials for industrial, scientific and agricultural use
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Treatment of materials by means of chemical vapor deposition; printing services; treatment and processing of crystalline materials using chemicals; processing of chemicals, namely, carbon; processing of materials, by means of chemical vapor deposition; treatment of semiconductor materials for use in connection with electronic devices by means of chemical vapor deposition; custom manufacturing and processing for the formation of graphene; custom manufacturing and processing for the formation of 2D materials in particular graphene, borophone; application of graphene coatings using chemical vapour deposition techniques; manufacture of nano scale material to the order and specification of others for use in the manufacture of other goods, namely, formation of graphene by chemical vapour deposition; manufacture of nano scale material to the order and specification of others for use in the manufacture of other goods, namely, the propagation of graphene layers on sacrificial substrates for subsequent transfer to other materials, in particular silicon; manufacture of nano scale material to the order and specification of others for use in the manufacture of other goods, namely, exfoliation of graphene; graphene foundry services, being custom manufacture of graphene; custom manufacturing services namely custom manufacturing of graphene electronic devices; foundry services, namely, custom manufacturing of graphene coated wafers; information, consultancy and advisory services relating to all the aforesaid services Chemicals for use in industry and science, as well as in agriculture, horticulture and forestry except fungicides, herbicides, insecticides and parasiticicides; unprocessed artificial resins, unprocessed plastics; biological preparations for use in industry and science; graphene; graphene composite materials consisting of structures made of metal, concrete, ceramic or polymer and densified by graphene for use in manufacturing; single-layer materials and 2D materials, namely graphene, borophene; carbon; graphite, namely, natural graphite, graphite for industrial purposes, graphene, graphene oxide; functionalised carbon materials, namely, carbon for industrial purposes; conjugated carbon materials, namely, carbon; reagents for research purposes; carbon nanotubes, namely, tubular carbon molecules used in extremely small scale electronic and mechanical applications; graphene flakes; graphene powder; nanostructured morphologies of carbon, namely, carbon molecules used in extremely small scale electronic and mechanical applications; reagents for biosensing for scientific and research use; all the aforesaid goods for use in industry and manufacture Scientific research, surveying, audiovisual, optical, measuring, signalling, detecting, testing, inspecting, life-saving and teaching apparatus and instruments, namely, scientific apparatus in the nature of research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; Scientific instruments in the nature of research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; scientific apparatus in the nature of computer hardware for diagnostic testing of body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers, apparatus and instruments for conducting, switching, transforming, accumulating, regulating or controlling the distribution or use of electricity, namely, electric conductors, electric switches, transformers; apparatus and instruments for recording, transmitting, reproducing or processing sound, images or data; graphene solid-state electronic devices, namely, electronic devices being sensors, transistors where electric current flows through graphene; graphene sensors, namely, electronic devices which produce output signals dependent upon electric current flowing through graphene; apparatus and instruments for scientific purposes, namely, sensors for signalling, detecting and inspecting changes in electrical current or voltage; batteries; battery chargers for use with telephones; cables, electric; downloadable communication software for accessing data stored on hardware and transferring data to another device; Downloadable computer software for data management; conductors, electric; current rectifiers; data processing systems, comprised of data processors, data processing couplers, data cables; electronic components, namely, capacitors, connectors, filters, oscillators, relays; electronic data recorders; electronic meters; encoders; fault current circuit breakers; downloadable graphical user interface software; optoelectronics, namely, solar cells, photodiodes and optical fibres; microphones; audio speakers; sensors for use in the control of motors; capacitors; antennas; graphene antennas; graphene transistors; graphene field-effect transistor (FET); hall-effect sensors; cryogenic sensors; magnetic field sensors; graphene hall effect sensors; graphene temperature sensors; graphene photonics devices, namely, electronic devices containing graphene for creating, manipulating or detecting light; graphene modulators, namely, optical modulators; graphene light-sensitive devices, namely, solar cells, photodiodes, photocells, phototransistors and photodetectors; graphene light-emitting devices, namely, inorganic light emitting diodes (LEDs) and organic light emitting diodes (OLEDs); graphene solar cells; graphene solar panels for the production of electricity; graphene touch screens; graphene battery; graphene wafer; graphene sheets, namely single-atom-thick layers of carbon atoms arranged in a crystalline solid being crystalline semiconductor materials; graphene heterostructures, namely a heterostructure that includes graphene having an interface with a semiconductor in the nature of structured semiconductor wafers; graphene diode; environmental monitoring sensors, namely, sensors for monitoring pollutants; industrial process control sensors, sensors for detecting position; sensors for pharmaceutical manufacturing control, namely, for detecting impurities; quality control sensors, namely, sensors for detecting manufacturing faults, sensors for food safety; sensors for hazardous environments, namely, pollutant or temperature sensors; sensors for detection of hazardous environments, namely, temperature sensors or pollutant sensors; electronic sensors for measuring solar radiation; replacement and structural parts and fittings for all the aforesaid goods Surgical apparatus and instruments, medical and dental apparatus and instruments, namely, medical imaging apparatus, medical ultrasound apparatus, medical analysers for the analysis of small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; apparatus for screening, monitoring, therapeutic or diagnostic medical purposes, namely, medical diagnostic apparatus for testing body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; apparatus for screening, monitoring, therapeutic or diagnostic veterinary purposes, namely, veterinary diagnostic apparatus for testing body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; biosensors for detecting diseases being a measurement apparatus, for medical purposes; medical bioelectronic devices, namely, electrochemical biosensors; medical biosensors for immunological, molecular and enzymatic tests; medical biosensors for the detection of small molecules; handheld biosensor readers sold as a unit with medical biosensors for detecting infectious diseases; replacement and structural parts and fittings for all the aforesaid goods Scientific and technological services and research and design relating thereto, namely, product design and development in the field of electronics; Developing research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; developing scientific instruments in the nature of research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; developing scientific apparatuses in the nature of, computer hardware for diagnostic testing of body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; development of diagnostic sensors in the field of medical, industrial, and consumer applications; industrial analysis and industrial research, namely, chemical analysis, industrial research in the field of chemicals and industrial design services; design and development of computer hardware and software; scientific analysis in the field of semiconductors; technological analysis and scientific advisory and consultancy services relating to the application and uses of graphene and two dimensional materials; technological and scientific advisory and consultancy services relating to electronic devices, namely, transistors, magnetic sensors being electromagnetic apparatus used to measure magnetic fields, electrochemical sensors used for determination of analyte concentrations in bodily fluids for medical diagnostic purposes and electrochemical sensors used for measurement of levels of pollutants in air or water for environmental monitoring purposes; technological analysis and scientific advisory and consultancy services relating to manufacture of nano scale material; technological analysis and scientific advisory and consultancy services relating to manufacture of devices incorporating 2D-materials or processes associated with the manufacture of 2D-materials; advisory services relating to material testing; analysis of technical data for chemical analysis; biological analysis; biochemical research; biochemical analysis; bioelectronic analysis; analysis of biological signals; measuring services in the nature of calibration; chemical research; chemical research and analysis; chemical testing; chemistry services, namely, chemical research; consultancy relating to technical and scientific analysis in the field of graphene materials; development and testing of computing methods, algorithms and software for processing telecommunication and navigation signals; development of computer hardware; electronic data storage; maintenance of software for computer systems; material testing; material testing and evaluation; design and development of electronic devices; design and development of graphene-based electronic devices; design and development of biosensors; design and development of medical or veterinary diagnostic or screening components or equipment; technological and scientific advisory and consultancy services relating to generating electric signals from captured molecules; information, consultancy and advisory services relating to all the aforesaid services
40 - Treatment of materials; recycling, air and water treatment,
01 - Chemical and biological materials for industrial, scientific and agricultural use
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Treatment of materials by means of chemical vapor deposition; printing services; treatment and processing of crystalline materials using chemicals; processing of chemicals, namely, carbon; processing of materials, by means of chemical vapor deposition; treatment of semiconductor materials for use in connection with electronic devices by means of chemical vapor deposition; custom manufacturing and processing for the formation of graphene; custom manufacturing and processing for the formation of 2D materials in particular graphene, borophone; application of graphene coatings using chemical vapour deposition techniques; manufacture of nano scale material to the order and specification of others for use in the manufacture of other goods, namely, formation of graphene by chemical vapour deposition; manufacture of nano scale material to the order and specification of others for use in the manufacture of other goods, namely, the propagation of graphene layers on sacrificial substrates for subsequent transfer to other materials, in particular silicon; manufacture of nano scale material to the order and specification of others for use in the manufacture of other goods, namely, exfoliation of graphene; graphene foundry services, being custom manufacture of graphene; custom manufacturing services namely custom manufacturing of graphene electronic devices; foundry services, namely, custom manufacturing of graphene coated wafers; information, consultancy and advisory services relating to all the aforesaid services Chemicals for use in industry and science, as well as in agriculture, horticulture and forestry except fungicides, herbicides, insecticides and parasiticicides; unprocessed artificial resins, unprocessed plastics; biological preparations for use in industry and science; graphene; graphene composite materials consisting of structures made of metal, concrete, ceramic or polymer and densified by graphene for use in manufacturing; single-layer materials and 2D materials, namely graphene, borophene; carbon; graphite, namely, natural graphite, graphite for industrial purposes, graphene, graphene oxide; functionalised carbon materials, namely, carbon for industrial purposes; conjugated carbon materials, namely, carbon; reagents for research purposes; carbon nanotubes, namely, tubular carbon molecules used in extremely small scale electronic and mechanical applications; graphene flakes; graphene powder; nanostructured morphologies of carbon, namely, carbon molecules used in extremely small scale electronic and mechanical applications; reagents for biosensing for scientific and research use; all the aforesaid goods for use in industry and manufacture Scientific research, surveying, audiovisual, optical, measuring, signalling, detecting, testing, inspecting, life-saving and teaching apparatus and instruments, namely, scientific apparatus in the nature of research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; Scientific instruments in the nature of research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; scientific apparatus in the nature of computer hardware for diagnostic testing of body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers, apparatus and instruments for conducting, switching, transforming, accumulating, regulating or controlling the distribution or use of electricity, namely, electric conductors, electric switches, transformers; apparatus and instruments for recording, transmitting, reproducing or processing sound, images or data; graphene solid-state electronic devices, namely, electronic devices being sensors, transistors where electric current flows through graphene; graphene sensors, namely, electronic devices which produce output signals dependent upon electric current flowing through graphene; apparatus and instruments for scientific purposes, namely, sensors for signalling, detecting and inspecting changes in electrical current or voltage; batteries; battery chargers for use with telephones; cables, electric; downloadable communication software for accessing data stored on hardware and transferring data to another device; Downloadable computer software for data management; conductors, electric; current rectifiers; data processing systems, comprised of data processors, data processing couplers, data cables; electronic components, namely, capacitors, connectors, filters, oscillators, relays; electronic data recorders; electronic meters; encoders; fault current circuit breakers; downloadable graphical user interface software; optoelectronics, namely, solar cells, photodiodes and optical fibres; microphones; audio speakers; sensors for use in the control of motors; capacitors; antennas; graphene antennas; graphene transistors; graphene field-effect transistor (FET); hall-effect sensors; cryogenic sensors; magnetic field sensors; graphene hall effect sensors; graphene temperature sensors; graphene photonics devices, namely, electronic devices containing graphene for creating, manipulating or detecting light; graphene modulators, namely, optical modulators; graphene light-sensitive devices, namely, solar cells, photodiodes, photocells, phototransistors and photodetectors; graphene light-emitting devices, namely, inorganic light emitting diodes (LEDs) and organic light emitting diodes (OLEDs); graphene solar cells; graphene solar panels for the production of electricity; graphene touch screens; graphene battery; graphene wafer; graphene sheets, namely single-atom-thick layers of carbon atoms arranged in a crystalline solid being crystalline semiconductor materials; graphene heterostructures, namely a heterostructure that includes graphene having an interface with a semiconductor in the nature of structured semiconductor wafers; graphene diode; environmental monitoring sensors, namely, sensors for monitoring pollutants; industrial process control sensors, sensors for detecting position; sensors for pharmaceutical manufacturing control, namely, for detecting impurities; quality control sensors, namely, sensors for detecting manufacturing faults, sensors for food safety; sensors for hazardous environments, namely, pollutant or temperature sensors; sensors for detection of hazardous environments, namely, temperature sensors or pollutant sensors; electronic sensors for measuring solar radiation; replacement and structural parts and fittings for all the aforesaid goods Surgical apparatus and instruments, medical and dental apparatus and instruments, namely, medical imaging apparatus, medical ultrasound apparatus, medical analysers for the analysis of small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; apparatus for screening, monitoring, therapeutic or diagnostic medical purposes, namely, medical diagnostic apparatus for testing body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; apparatus for screening, monitoring, therapeutic or diagnostic veterinary purposes, namely, veterinary diagnostic apparatus for testing body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; biosensors for detecting diseases being a measurement apparatus, for medical purposes; medical bioelectronic devices, namely, electrochemical biosensors; medical biosensors for immunological, molecular and enzymatic tests; medical biosensors for the detection of small molecules; handheld biosensor readers sold as a unit with medical biosensors for detecting infectious diseases; replacement and structural parts and fittings for all the aforesaid goods Scientific and technological services and research and design relating thereto, namely, product design and development in the field of electronics; Developing research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; developing scientific instruments in the nature of research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; developing scientific apparatuses in the nature of, computer hardware for diagnostic testing of body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; development of diagnostic sensors in the field of medical, industrial, and consumer applications; industrial analysis and industrial research, namely, chemical analysis, industrial research in the field of chemicals and industrial design services; design and development of computer hardware and software; scientific analysis in the field of semiconductors; technological analysis and scientific advisory and consultancy services relating to the application and uses of graphene and two dimensional materials; technological and scientific advisory and consultancy services relating to electronic devices, namely, transistors, magnetic sensors being electromagnetic apparatus used to measure magnetic fields, electrochemical sensors used for determination of analyte concentrations in bodily fluids for medical diagnostic purposes and electrochemical sensors used for measurement of levels of pollutants in air or water for environmental monitoring purposes; technological analysis and scientific advisory and consultancy services relating to manufacture of nano scale material; technological analysis and scientific advisory and consultancy services relating to manufacture of devices incorporating 2D-materials or processes associated with the manufacture of 2D-materials; advisory services relating to material testing; analysis of technical data for chemical analysis; biological analysis; biochemical research; biochemical analysis; bioelectronic analysis; analysis of biological signals; measuring services in the nature of calibration; chemical research; chemical research and analysis; chemical testing; chemistry services, namely, chemical research; consultancy relating to technical and scientific analysis in the field of graphene materials; development and testing of computing methods, algorithms and software for processing telecommunication and navigation signals; development of computer hardware; electronic data storage; maintenance of software for computer systems; material testing; material testing and evaluation; design and development of electronic devices; design and development of graphene-based electronic devices; design and development of biosensors; design and development of medical or veterinary diagnostic or screening components or equipment; technological and scientific advisory and consultancy services relating to generating electric signals from captured molecules; information, consultancy and advisory services relating to all the aforesaid services
44.
A METHOD OF FORMING A GRAPHENE LAYER STRUCTURE AND A GRAPHENE SUBSTRATE
A wafer for the CVD growth of uniform graphene and method of manufacture thereof There is provided a wafer for the CVD growth of uniform graphene at a temperature in excess of 700°C, the wafer comprising in order: a planar silicon substrate, an insulating layer provided across the silicon substrate, and a barrier layer provided across the insulating layer, wherein the insulating layer is a silicon nitride and/or aluminium nitride layer, and wherein the barrier layer has a constant thickness of 50 nm or less and provides a growth surface for the CVD growth of uniform graphene.
The present invention pro ides a method of providing an electrical contact on a graphene surface, the method comprising: (i) providing a graphene layer structure comprising one or more graphene layers and having a polymer coating on a surface thereof; (ii) contacting one or more portions of the polymer coating with a conductive metal-containing composition comprising a solvent, wherein the polymer coating is soluble in the solvent: and (iii) volatilising the solvent to deposit the conductive metal on the surface of the graphene layer structure.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
The present invention provides a method for the production of a polymer-coated graphene layer structure, the method comprising: providing a substrate on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on the substrate, wherein the inlets are cooled to less than 100° C. and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, wherein the graphene layer structure has a first charge carrier density, spin-coating a composition having a second charge carrier density onto the graphene layer structure to form an air-impermeable coating, wherein the coated graphene layer structure has a third charge carrier density which is less than the first charge carrier density, wherein the composition comprises a polymer or polymer precursor.
A method for the manufacture of an improved graphene substrate and applications therefor There is provided a method (100) for the manufacture of an electronic device precursor, the method comprising: (i) providing a silicon wafer (200) having a growth surface (205); (ii) forming (105) an insulative layer (210) on the growth surface (205) having a thickness of from 1 nm to 10 nm, preferably 2 nm to 1 nm; (iii) forming (110) a graphene monolayer or multi-layer structure (215) on the insulative layer (210); (iv) optionally forming (115, 120) one or more further layers (220) and/or electrical contacts (225, 230) on the graphene monolayer or multi-layer structure (215); (v) forming (125) a polymer coating (235) over the graphene monolayer or multi-layer structure (215) and any further layers (115) and/or electrical contacts (225, 230); (vi) thinning (130) the silicon wafer (200), or removing the silicon wafer (200) to provide an exposed surface of the insulative layer (210), by etching with an etchant, wherein the silicon wafer (200) is optionally subjected to a grinding step before etching; and (vii) optionally dissolving away (135) the polymer coating (235); wherein the insulative layer (210) and the polymer coating (235) are resistant to etching by the etchant. The resulting conductive graphene substrate can be used in (organic) LEDs, capacitor devices, tunnel FETs and Hall sensors.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 43/14 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof for Hall-effect devices
B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
H01L 29/739 - Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field effect
H01L 29/92 - Capacitors with potential-jump barrier or surface barrier
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
The present invention provides a method for the production of an electronic device, the method comprising: (i) providing a substrate comprising first and second layers on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, (ii) supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on a surface of the first layer of the substrate, wherein the inlets are cooled to less than 100° C. and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, (iii) selectively laser ablating the graphene to expose one or more portions of the surface of the first layer of the substrate, and (iv) selectively laser ablating the surface of the first layer of the substrate to expose one or more portions of the second layer of the substrate, wherein the first layer is an electrically conductive layer and the second layer is an electrically insulative layer, or wherein the second layer is an electrically conductive layer and the first layer is an electrically insulative layer.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
A method of producing an electronic device precursor (200), particularly for forming a Hall sensor or a transistor, comprises patterning a plasma-resistant dielectric (215) on a graphene layer (210) provided on a substrate (205), plasma etching at least one uncovered region of the graphene layer to form at least one region having an exposed edge surface, and forming a least one ohmic contact (220a, 220b) which directly contacts a portion of the exposed edge surface.
H01L 21/336 - Field-effect transistors with an insulated gate
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
A graphene Hall sensor (10) for operation at cryogenic temperatures (below 120 K) comprises a dielectric layer (12), preferably of alumina or silica, provided on a graphene sheet formed on a substrate (18), a first pair of electrical contacts (14, 15) and a second pair of electrical contacts (16, 17) on continuous outer edge surfaces of a (cross) patterned dielectric layer/graphene sheet structure, spaced along two perpendicular directions (x, y). The graphene sheet has a sheet carrier density in the range of 2•1011cm -2to 1•1013cm -2. A corresponding manufacturing method comprises patterning a dielectric layer onto a portion of the graphene sheet, and (oxygen) plasma etching the graphene sheet thereafter.
depositing a material 30 for injecting charge into, or extracting charge out of, the graphene layer structure 5 onto the one or more plasma-etched first portions 25.
G01N 27/414 - Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
The present invention provides a method of manufacturing a graphene transistor 101, the method comprising: (a) providing a substrate having a substantially flat surface, wherein the surface comprises an insulating region 110 and an adjacent semiconducting region 105; (b) forming a graphene layer structure 115 on the surface, wherein the graphene layer structure is disposed on and across a portion of both the insulating region and the adjacent semiconducting region; (c) forming a layer of dielectric material 120 on a portion of the graphene layer structure which is itself disposed on the semiconducting region 105; and (d) providing: a source contact 125 on a portion of the graphene layer structure which is itself disposed on the insulating region 110; a gate contact 130 on the layer of dielectric material 120 and above a portion of the graphene layer structure which is itself disposed on the semiconducting region 105; and a drain contact 135 on the semiconducting region 105 of the substrate surface.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
The present invention provides a method for the formation of graphene on a silicon substrate, the method comprising: (i) providing a silicon wafer having a growth surface which is free of native oxides, in a reaction chamber; (ii) nitriding the growth surface with a nitrogen-containing gas with the wafer at a temperature in excess of 800° C., to thereby form a silicon nitride layer; and (iii) forming a graphene mono-layer or multiple layer structure on the silicon nitride layer; wherein the method is performed in-situ and sequentially in the reaction chamber. The present invention also provides a graphene-on-silicon layer structure having an intervening silicon nitride layer and free of any intervening native oxide layer.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
There is provided a method of manufacturing a transistor, the method comprising: (a) providing a substrate having a semiconductor surface; (b) providing a graphene layer structure on a first portion of the semiconductor surface, wherein the graphene layer structure has a thickness of n graphene monolayers, wherein n is at least 2; (c) etching a first portion of the graphene layer structure to reduce the thickness of the graphene layer structure in said first portion to from n−1 to 1 graphene monolayers; (d) forming a layer of dielectric material on the first portion of the graphene layer structure; and (e) providing: a source contact on a second portion of the graphene layer structure; a gate contact on the layer of dielectric material; and a drain contact on a second portion of the semiconductor surface of the substrate.
H01L 21/04 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
Methods of providing an air- and/or moisture-barrier coating on at least a portion of a two-dimensional material are described. In particular, the methods provide an improved approach for providing a doped two-dimensional material, preferably graphene, on a substrate wherein at least a portion of the two-dimensional material is coated with an air- and/or moisture-barrier coating that comprises an inorganic oxide, fluoride or sulfide. Two-dimensional materials provided with an air- and/or moisture impermeable inorganic oxide, fluoride or sulfide coating and an electronic device comprising the same are also described.
A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
40 - Treatment of materials; recycling, air and water treatment,
01 - Chemical and biological materials for industrial, scientific and agricultural use
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Treatment of materials by means of chemical vapor deposition; printing services; treatment and processing of crystalline materials using chemicals; processing of chemicals; processing of materials, by means of chemical vapor deposition; treatment of semiconductor materials for use in connection with electronic devices; custom manufacturing and processing for the formation of graphene; custom manufacturing and processing for the formation of 2D materials in particular graphene, borophone; application of graphene coatings using chemical vapour deposition techniques; manufacture of nano scale material to the order and specification of others for use in the manufacture of other goods, namely, formation of graphene by chemical vapour deposition; manufacture of nano scale material to the order and specification of others for use in the manufacture of other goods, namely, the propagation of graphene layers on sacrificial substrates for subsequent transfer to other materials, in particular silicon; manufacture of nano scale material to the order and specification of others for use in the manufacture of other goods, namely, exfoliation of graphene; graphene foundry services, being custom manufacture of graphene; custom manufacturing services namely custom manufacturing of graphene electronic devices; foundry services, namely, custom manufacturing of graphene coated wafers; information, consultancy and advisory services relating to all the aforesaid services Chemicals for use in industry and science, as well as in agriculture, horticulture and forestry except fungicides, herbicides, insecticides and parasiticicides; unprocessed artificial resins, unprocessed plastics; biological preparations for use in industry and science; graphene; graphene composite materials consisting of structures made of metal, concrete, ceramic or polymer and densified by graphene for use in manufacturing; single-layer materials and 2D materials, namely graphene, borophene; carbon; graphite, namely, natural graphite, graphite for industrial purposes, graphane, graphene oxide; functionalised carbon materials, namely, carbon for industrial purposes; conjugated carbon materials, namely, carbon; reagents for research purposes; carbon nanotubes, namely, tubular carbon molecules used in extremely small scale electronic and mechanical applications; graphene flakes; graphene powder; nanostructured morphologies of carbon, namely, carbon molecules used in extremely small scale electronic and mechanical applications; reagents for biosensing for scientific and research use; all the aforesaid goods for use in industry and manufacture Scientific research, surveying, audiovisual, optical, measuring, signalling, detecting, testing, inspecting, life-saving and teaching apparatus and instruments, namely, scientific apparatus in the nature of research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; Scientific instruments in the nature of research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; scientific apparatus in the nature of computer hardware for diagnostic testing of body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers, apparatus and instruments for conducting, switching, transforming, accumulating, regulating or controlling the distribution or use of electricity, namely, electric conductors, electric switches, transformers; apparatus and instruments for recording, transmitting, reproducing or processing sound, images or data; graphene solid-state electronic devices, namely, electronic devices being sensors, transistors where electric current flows through graphene; graphene sensors, namely, electronic devices which produce output signals dependent upon electric current flowing through graphene; apparatus and instruments for scientific purposes, namely, sensors for signalling, detecting and inspecting changes in electrical current or voltage; batteries; battery chargers for use with telephones; cables, electric; downloadable communication software for accessing data stored on hardware and transferring data to another device; Downloadable computer software for data management; conductors, electric; current rectifiers; data processing systems, comprised of data processors, data processing couplers, data cables; electronic components, namely, capacitors, connectors, filters, oscillators, relays; electronic data recorders; electronic meters; encoders; fault current circuit breakers; downloadable graphical user interface software; optoelectronics, namely, solar cells, photodiodes and optical fibres; microphones; audio speakers; sensors for use in the control of motors; capacitors; antennas; graphene antennas; graphene transistors; graphene field-effect transistor (FET); hall-effect sensors; cryogenic sensors; magnetic field sensors; graphene hall effect sensors; graphene temperature sensors; graphene photonics devices, namely, electronic devices containing graphene for creating, manipulating or detecting light; graphene modulators, namely, optical modulators; graphene light-sensitive devices, namely, solar cells, photodiodes, photocells, phototransistors and photodetectors; graphene light-emitting devices, namely, inorganic light emitting diodes (LEDs) and organic light emitting diodes (OLEDs); graphene solar cells; graphene solar panels for the production of electricity; graphene touch screens; graphene battery; graphene wafer; graphene sheets, namely single-atom-thick layers of carbon atoms arranged in a crystalline solid being crystalline semiconductor materials; graphene heterostructures, namely a heterostructure that includes graphene having an interface with a semiconductor in the nature of structured semiconductor wafers; graphene diode; environmental monitoring sensors, namely, sensors for monitoring pollutants; industrial process control sensors, sensors for detecting position; sensors for pharmaceutical manufacturing control, namely, for detecting impurities; quality control sensors, namely, sensors for detecting manufacturing faults, sensors for food safety; sensors for hazardous environments, namely, pollutant or temperature sensors; sensors for detection of hazardous environments, namely, temperature sensors or pollutant sensors; electronic sensors for measuring solar radiation; replacement and structural parts and fittings for all the aforesaid goods Surgical apparatus and instruments, medical and dental apparatus and instruments, namely, medical imaging apparatus, medical ultrasound apparatus, medical analysers for the analysis of small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; diagnostic kits comprised primarily of medical instruments in the nature of biosensors, for testing of body fluids, bio samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; medical test kits consisting of electronic analysers for testing of biological samples; apparatus for screening, monitoring, therapeutic or diagnostic medical purposes, namely, medical diagnostic apparatus for testing body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; apparatus for screening, monitoring, therapeutic or diagnostic veterinary purposes, namely, veterinary diagnostic apparatus for testing body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; biosensors for detecting diseases being a measurement apparatus, for medical purposes; medical bioelectronic devices, namely, electrochemical biosensors; medical biosensors for immunological, molecular and enzymatic tests; medical biosensors for the detection of small molecules; handheld biosensor readers sold as a unit with medical biosensors for detecting infectious diseases; replacement and structural parts and fittings for all the aforesaid goods Scientific and technological services and research and design relating thereto, namely, product design and development in the field of electronics; Developing research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; developing scientific instruments in the nature of research laboratory analyzers for testing biological samples, namely, body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; developing scientific apparatuses in the nature of, computer hardware for diagnostic testing of body fluids, bio-samples, liquid samples, organic samples, non-organic samples, small biomolecules, biomolecule fragments, proteins, peptides, or aptamers; development of diagnostic sensors in the field of medical, industrial, and consumer applications; industrial analysis and industrial research, namely, chemical analysis, industrial research in the field of chemicals and industrial design services; design and development of computer hardware and software; scientific analysis in the field of semiconductors; technological analysis and scientific advisory and consultancy services relating to the application and uses of graphene and two dimensional materials; technological and scientific advisory and consultancy services relating to electronic devices; technological analysis and scientific advisory and consultancy services relating to manufacture; technological analysis and scientific advisory and consultancy services relating to manufacture of devices incorporating 2D-materials or processes associated with the manufacture of 2D-materials; advisory services relating to material testing; analysis of technical data for chemical analysis; biological analysis; biochemical research; biochemical analysis; bioelectronic analysis; analysis of biological signals; measuring services in the nature of calibration; chemical research; chemical research and analysis; chemical testing; chemistry services, namely, chemical research; consultancy relating to technical and scientific analysis in the field of graphene materials; development and testing of computing methods, algorithms and software for processing telecommunication and navigation signals; development of computer hardware; electronic data storage; maintenance of software for computer systems; material testing; material testing and evaluation; design and development of electronic devices; design and development of graphene-based electronic devices; design and development of biosensors; design and development of medical or veterinary diagnostic or screening components or equipment; technological and scientific advisory and consultancy services relating to generating electric signals from captured molecules; information, consultancy and advisory services relating to all the aforesaid services
A method of field mapping a cell under load is provided. The method comprises the steps of: providing a cell; providing a Hall effect sensor comprising a graphene conductor for measuring a magnetic field; positioning the Hall effect sensor at a first position adjacent a face of the cell; applying a load to the cell; and measuring an output of the Hall effect sensor.
The present invention provides method for forming a diode, the method comprises providing a first graphene layer structure on a first substrate; providing a second graphene layer structure on a second substrate; treating the first graphene layer structure with an oxidant to form a graphene oxide surface thereon; and aligning the second graphene layer structure against the graphene oxide surface of the first graphene layer structure.
H01L 29/15 - Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
H01L 29/86 - Types of semiconductor device controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
An array of graphene sheets configured to generate electricity from a flow of an ion-containing fluid, wherein the array comprises a plurality of graphene sheets, each graphene sheet comprising first and second electrical contacts, having a surface extending between the first and second electrical contacts for contacting the flow of ion-containing fluid, and wherein each graphene sheet is in electrical contact with at least a further graphene sheet.
H02N 3/00 - Generators in which thermal or kinetic energy is converted into electrical energy by ionisation of a fluid and removal of the charge therefrom
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
The present invention provides a method for the production of a polymer-coated graphene layer structure, the method comprising: providing a substrate on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on the substrate, wherein the inlets are cooled to less than 100°C and the susceptor is heated to a temperature of at least 50°C in excess of a decomposition temperature of the precursor, wherein the graphene layer structure has a first charge carrier density, spin-coating a composition having a second charge carrier density onto the graphene layer structure to form an air-impermeable coating, wherein the coated graphene layer structure has a third charge carrier density which is less than the first charge carrier density, wherein the composition comprises a polymer or polymer precursor.
B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00 - Manufacture or treatment of nanostructures
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
63.
A METHOD OF MAKING GRAPHENE STRUCTURES AND DEVICES
The present invention provides a method for the production of an electronic device, the method comprising: (i) providing a substrate comprising first and second layers on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, (ii) supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form a graphene layer structure on a surface of the first layer of the substrate, wherein the inlets are cooled to less than 100°C and the susceptor is heated to a temperature of at least 50°C in excess of a decomposition temperature of the precursor, (iii) selectively laser ablating the graphene to expose one or more portions of the surface of the first layer of the substrate, and (iv) selectively laser ablating the surface of the first layer of the substrate to expose one or more portions of the second layer of the substrate, wherein the first layer is an electrically conductive layer and the second layer is an electrically insulative layer, or wherein the second layer is an electrically conductive layer and the first layer is an electrically insulative layer.
The present invention provides a method of providing an electrical contact on a graphene surface, the method comprising: (i) providing a graphene layer structure comprising one or more graphene layers and having a polymer coating on a surface thereof; (ii) contacting one or more portions of the polymer coating with a conductive metal-containing composition comprising a solvent, wherein the polymer coating is soluble in the solvent; and (iii) volatilising the solvent to deposit the conductive metal on the surface of the graphene layer structure.
C09D 133/12 - Homopolymers or copolymers of methyl methacrylate
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
B05D 7/04 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber to surfaces of films or sheets
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B05D 7/00 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
The present invention provides an electrical generator comprising one or more graphene sheets, each graphene sheet comprising first and second electrical contacts and having a surface extending between the first and second electrical contacts arranged to contact a flow of an ion-containing fluid, wherein each surface is provided with a polymer coating having a thickness of less than 100 nm.
B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00 - Manufacture or treatment of nanostructures
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
A method for the production of a graphene layer structure having from 1 to 100 graphene layers, the method comprising providing a substrate having a thermal resistance equal to or greater than that of sapphire, on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form graphene on the substrate, wherein the inlets are cooled to less than 100° C., preferably 50 to 60° C., and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, using a laser to selectively ablate graphene from the substrate, wherein the laser has a wavelength in excess of 600 nm and a power of less than 50 Watts.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 33/04 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
There is provided an array of graphene sheets configured to generate electricity from a flow of an ion-containing fluid, wherein the array comprises a plurality of graphene sheets, each graphene sheet comprising first and second electrical contacts, having a surface extending between the first and second electrical contacts for contacting the flow of ion-containing fluid, and wherein each graphene sheet is in electrical contact with at least a further graphene sheet.
B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00 - Manufacture or treatment of nanostructures
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
69.
A METHOD OF MAKING A GRAPHENE TRANSISTOR AND DEVICES
The present invention provides a chemically-doped graphene transistor comprising a plurality of graphene layers and having a first doped region separated from a second doped region by a third doped region, wherein the first and second doped regions are of an opposite doping type to the third doped region, and wherein each of the first, second and third doped regions each comprise a separate electrical contact.
The present invention provides a method for the production of a graphene layer structure having from 1 to 100 graphene layers, the method comprising: providing a substrate having a thermal resistance equal to or greater than that of sapphire, on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form graphene on the substrate, wherein the inlets are cooled to less than 100°C, preferably 50 to 60°C, and the susceptor is heated to a temperature of at least 50°C in excess of a decomposition temperature of the precursor, using a laser to selectively ablate graphene from the substrate, wherein the laser has a wavelength in excess of 600nm and a power of less than 50 Watts.
The present invention provides a method for the production of graphene on a substrate, the method comprising: providing a substrate having Si-OH and/or Si-H moieties on a surface thereof; providing a carbon-containing reagent; contacting the carbon-containing reagent with the surface of the substrate to form a carbon-containing coating attached to the Si-OH and/or Si-H moieties on the surface, depositing one or more metals onto the coated surface to form a metal layer on the coated surface, heating the substrate under an inert atmosphere to thereby decompose the carbon-containing coating to form a metal-coated graphene layer on the substrate.
The present invention provides a method for the production of a light-sensitive or light-emitting electronic device, the method comprising: forming a light-sensitive or light-emitting device by MOCVD in an MOCVD reaction chamber; forming a graphene layer structure on the light-sensitive or light-emitting device in the MOCVD reaction chamber; wherein the graphene layer structure comprises from 2 to 10 layers, preferably 2 to 6 layers, of graphene and wherein the graphene layer structure provides an electrical contact for the device.
The present invention provides a method for the production of a graphene layer structure, the method comprising: providing a substrate on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, rotating the heated susceptor at a rotation rate of at least 300rpm, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form graphene on the substrate, wherein the inlets are cooled to less than 100°C, preferably 50 to 60°C, and the susceptor is heated to a temperature of at least 50°C in excess of a decomposition temperature of the precursor, wherein the constant separation is at least 12cm and preferably from 12 to 20cm.
A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
C01B 32/186 - Preparation by chemical vapour deposition [CVD]
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
A method of producing graphene or other two-dimensional material such as graphene comprising heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000°C per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimising decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100mm.
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
A method of producing graphene or other two-dimensional material such as graphene comprising heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000°C per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimising decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100mm.
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
