A method for the connection of electronic components, in which (a) a sandwich arrangement is provided, which comprises at least (a1) an electronic component 1, (a2) an electronic component 2, and (a3) a metal sintering preparation being situated between metal contact surfaces of the electronic components 1 and 2, and in which (b) the sandwich arrangement is being pressureless sintered, wherein the method takes place in an ambient gas atmosphere, and wherein an exchange of the ambient gas atmosphere is made within the course of the pressureless metal sintering process.
A tin-based solder alloy powder in the form of 2 to 38 µm small spherical tin-based solder alloy particles exhibiting an O/C weight ratio in the range of 1.0 to 2.2, wherein the spherical tin-based solder alloy particles have a thin outer surface layer of plant oil, and a process for its manufacture.
B22F 9/06 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material
B01J 19/18 - Stationary reactors having moving elements inside
B23K 35/02 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
A tin-based solder alloy powder in the form of 2 to 38 µm small spherical tin-based solder alloy particles having an inorganic surface and a thin outer surface layer of stressed castor oil, wherein the inorganic surface plus the thin outer surface layer of stressed castor oil together form a surface region of the spherical tin-based solder alloy particles, and wherein the surface region, when subjected to a ToF-SIMS analysis carried out with Ga+ primary ions having an energy of 15 keV and with a total scan time of 5 minutes, exhibits a secondary ion mass spectrum the negatively charged secondary ion fragments 113 amu with a relative signal intensity in the range of 0.7 to 3.1, 127 amu with a relative signal intensity in the range of 0.9 to 4.4, 136 amu with a relative signal intensity in the range of 1.4 to 6.7, 137 amu with a relative signal intensity in the range of 0.6 to 3.9, 152 amu with a relative signal intensity in the range of 1.3 to 12, 153 amu with a relative signal intensity in the range of 2.3 to 20, 183 amu with a relative signal intensity in the range of 0.6 to 16, 279 amu with a relative signal intensity in the range of 0.5 to 12, and 297 amu with a signal intensity of 1.
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B01J 19/18 - Stationary reactors having moving elements inside
B23K 35/02 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
B23K 35/26 - Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
B22F 9/06 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material
A silver paste consisting of (i) 5 to 15 wt% of at least one organic solvent, (ii) 75 to 90 wt% of silver particles, (iii) 5 to 10 wt% of a curable epoxy resin / hardener system, and (iv) 0 to 2 wt% of at least one constituent other than constituents (i) to (iii), wherein the curable epoxy resin / hardener system (iii) consists of no or at least one non- elastomer-modified epoxy resin (iiia), at least one elastomer-modified epoxy resin (iiib), and at least one hardener (iiic), wherein the weight ratio of epoxy resins (iiia) and (iiib) is ≤1.0, and wherein the at least one hardener (iiic) is selected from the group consisting of amine hardeners (iiic1) or from the group consisting of anhydride hardeners (iiic2). The silver paste can be used as interconnection material in electronics applications.
A ball-bond arrangement comprising a bond pad of a semiconductor device and a wire ball-bonded to the bond pad, wherein the wire extending from the bonded ball has a diameter of 15 to 50 μm, and comprises a silver-based wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the coating layer is a double-layer comprised of a 1 to 40 nm thick inner layer of palladium or nickel and an adjacent 20 to 500 nm thick outer layer of gold, and wherein the surface of the bonded ball has a gold coverage of 70 to 100%.
A round wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself is a silver-based wire core, wherein the coating layer is a double-layer comprised of a 1 to 100 nm thick inner layer of palladium or nickel and an adjacent 1 to 250 nm thick outer layer of gold, wherein the outer layer of gold exhibits at least one of the following intrinsic properties Al) and A2): A1) the average grain size of the crystal grains in the outer layer of gold, measured in longitudinal direction, is in the range of from-0.1 to 0.8 μm; A2) 60 to 100% of the crystal grains in the outer layer of gold are oriented in <100>direction, and 0 to 20% of the crystal grains in the outer layer of gold are oriented in <111>direction.
A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself is a silver-based wire core, wherein the coating layer is a double-layer comprised of a 1 to 100 nm thick inner layer of nickel or palladium and an adjacent 1 to 250 nm thick outer layer of gold, characterized in that the wire exhibits a total carbon content of ≤40 wt.-ppm.
A process for the manufacture of encapsulated semiconductor dies and/or of encapsulated semiconductor packages or for the manufacture of an encapsulation of semiconductor dies and/or of semiconductor packages comprising the steps: (1) assembling a multitude of bare semiconductor dies on a temporary carrier, and (2) encapsulating the assembled bare semiconductor dies, characterized in that an aqueous hydraulic hardening inorganic cement preparation is applied as encapsulation agent in step (2).
A3) 20 to 70% of the crystal grains of the wire core are oriented in <100> direction, and 3 to 40% of the crystal grains of the wire core are oriented in <111> direction, each % with respect to the total number of crystal grains with orientation parallel to the drawing direction of the wire.
C22F 1/14 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
C25D 3/12 - ElectroplatingBaths therefor from solutions of nickel or cobalt
C25D 3/48 - ElectroplatingBaths therefor from solutions of gold
C25D 3/50 - ElectroplatingBaths therefor from solutions of platinum group metals
C25D 5/10 - Electroplating with more than one layer of the same or of different metals
C25D 5/12 - Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
C25D 5/34 - Pretreatment of metallic surfaces to be electroplated
C25D 5/50 - After-treatment of electroplated surfaces by heat-treatment
H01B 5/02 - Single bars, rods, wires or stripsBus-bars
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
The disclosure relates to a method for manufacturing a biocompatible wire, a biocompatible wire comprising a biocompatible metallic material and a medical device comprising such wire.
The disclosure relates to a method for manufacturing a biocompatible wire, a biocompatible wire comprising a biocompatible metallic material and a medical device comprising such wire.
The method for manufacturing a biocompatible wire comprises providing a workpiece of a biocompatible metallic material, cold working the workpiece into a wire, and annealing the wire, wherein a cold work percentage is 97 to 99%, wherein the cold working is a drawing with a die reduction per pass ratio in a range of 6 to 40%, and wherein the annealing is done in a range of 850 to 1100° C.
C22F 1/10 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
C21D 8/06 - Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of rods or wires
C22C 19/05 - Alloys based on nickel or cobalt based on nickel with chromium
C22C 19/07 - Alloys based on nickel or cobalt based on cobalt
B21F 45/00 - Wire-working in the manufacture of other particular articles
B21C 1/00 - Manufacture of metal sheets, wire, rods, tubes or like semi-manufactured products by drawing
C21D 9/52 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articlesFurnaces therefor for wiresHeat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articlesFurnaces therefor for strips
A ball-bond arrangement comprising a bond pad of a semiconductor device and a wire ball-bonded to the bond pad, wherein the wire extending from the bonded ball has a diameter of 15 to 50 µm, and comprises a silver-based wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the coating layer is a double-layer comprised of a 1 to 40 nm thick inner layer of palladium or nickel and an adjacent 20 to 500 nm thick outer layer of gold, and wherein the surface of the bonded ball has a gold coverage of 70 to 100 %.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
A round wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself is a silver-based wire core, wherein the coating layer is a double-layer comprised of a 1 to 100 nm thick inner layer of palladium or nickel and an adjacent 1 to 250 nm thick outer layer of gold, wherein the outer layer of gold exhibits at least one of the following intrinsic properties A1) and A2): A1) the average grain size of the crystal grains in the outer layer of gold, measured in longitudinal direction, is in the range of from 0.1 to 0.8 µm; A2) 60 to 100 % of the crystal grains in the outer layer of gold are oriented in <100> direction, and 0 to 20 % of the crystal grains in the outer layer of gold are oriented in <111> direction, each % with respect to the total number of crystal grains with orientation parallel to the drawing direction of the wire.
B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
B23K 35/40 - Making wire or rods for soldering or welding
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
B21C 1/00 - Manufacture of metal sheets, wire, rods, tubes or like semi-manufactured products by drawing
A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself is a silver-based wire core, wherein the coating layer is a double-layer comprised of a 1 to 100 nm thick inner layer of nickel or palladium and an adjacent 1 to 250 nm thick outer layer of gold, characterized in that the wire exhibits a total carbon content of ≤ 40 wt.-ppm.
B23K 35/40 - Making wire or rods for soldering or welding
B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
C23C 30/00 - Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
14.
PROCESS FOR THE MANUFACTURE OF ENCAPSULATED SEMICONDUCTOR DIES AND/OR OF ENCAPSULATED SEMICONDUCTOR PACKAGES
A process for the manufacture of encapsulated semiconductor dies and/or of encapsulated semiconductor packages or for the manufacture of an encapsulation of semiconductor dies and/or of semiconductor packages comprising the steps: (1) assembling a multitude of bare semiconductor dies on a temporary carrier, and (2) encapsulating the assembled bare semiconductor dies, characterized in that an aqueous hydraulic hardening inorganic cement preparation is applied as encapsulation agent in step (2).
A wire comprising a silver-based wire core having a double-layer coating comprised of a 1 to 100 nm thick inner layer of palladium or nickel and an adjacent 1 to 250 nm thick outer layer of gold, wherein the wire exhibits at least one of the intrinsic properties A1) to A3): A1) the average grain size of the crystal grains in the wire core, measured in longitudinal direction, is in the range of from 0.7 to 1.1 µm; A2) the fraction of twin boundaries, measured in longitudinal direction of the wire, is in the range of from 5 to 40 %; A3) 20 to 70 % of the crystal grains of the wire core are oriented in <100> direction, and 3 to 40 % of the crystal grains of the wire core are oriented in <111> direction, each % with respect to the total number of crystal grains with orientation parallel to the drawing direction of the wire.
B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
B23K 35/40 - Making wire or rods for soldering or welding
C23C 30/00 - Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
A process for electrically connecting contact surfaces of electronic components by capillary wedge bonding a round wire of 8 to 80 μm to the contact surface of a first electronic component, forming a wire loop, and stitch bonding the wire to the contact surface of a second electronic component, wherein the wire comprises a wire core having a silver or silver-based wire core with a double-layered coating comprised of a 1 to 50 nm thick inner layer of nickel or palladium and an adjacent 5 to 200 nm thick outer layer of gold.
A method for producing a further wire, wherein the method includes, providing a first wire and feeding the first wire through a furnace to obtain the further wire. A further cast of the further wire is larger than a first cast of the first wire.
C21D 9/52 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articlesFurnaces therefor for wiresHeat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articlesFurnaces therefor for strips
wherein the coating layer is a double-layer comprised of a 1 to 1000 nm inner layer of gold and an adjacent 0.5 to 100 nm thick outer layer of palladium or a double-layer comprised of a 0.5 to 100 nm thick inner layer of palladium and an adjacent >200 to 1000 nm thick outer layer of gold.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
19.
MANUFACTURING AND TAPE TRANSFER METHOD FOR A PATTERNED PREFORM
The invention relates to a manufacturing method for a patterned preform on a transfer tape and such a patterned preform as well as using transfer tape as carrier. The manufacturing method for a patterned preform comprises the steps of: - providing a patterned tape comprising a rigid base and a tape, wherein the tape is made of polyimide or poly dimethyl siloxane, wherein the rigid base is at least partially covered by the tape, and wherein the tape comprises a pattern of recesses, and - at least partially filling the recesses of the patterned tape by an electroconductive material to obtain the patterned preform. The electroconductive material comprises a mixture of a first component with a first melting point and a second component and a second melting point, which differs from the first melting point.
H05K 3/34 - Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself is a silver wire core or a silver-based wire core, wherein the coating layer is a 1 to 1000 nm thick single-layer of gold or a double-layer comprised of a 1 to 100 nm thick inner layer of palladium and an adjacent 1 to 250 nm thick outer layer of gold, characterized in that the gold layer comprises at least one member selected from the group consisting of antimony, bismuth, arsenic and tellurium in a total proportion in the range of 10 to 100 wt.-ppm, based on the weight of the wire.
B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
B23K 35/40 - Making wire or rods for soldering or welding
C23C 30/00 - Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself is a silver wire core or a silver-based wire core, wherein the coating layer is a 1 to 1000 nm thick single-layer of gold or a double-layer comprised of a 1 to 100 nm thick inner layer of palladium and an adjacent 1 to 250 nm thick outer layer of gold, characterized in that the gold layer comprises at least one member selected from the group consisting of antimony, bismuth, arsenic and tellurium in a total proportion in the range of 10 to 100 wt.-ppm, based on the weight of the wire.
B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
B23K 35/40 - Making wire or rods for soldering or welding
C23C 30/00 - Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
A process for electrically connecting contact surfaces of electronic components by capillary wedge bonding a round wire of 8 to 80 pm to the contact surface of a first electronic component, forming a wire loop, and stitch bonding the wire to the contact surface of a second electronic component, wherein the capillary wedge bonding is carried out with a ceramic capillary having a lower face angle within the range of from zero to 4 degrees, wherein the wire comprises a wire core having a silver or silver-based wire core with a double-layered coating comprised of a 1 to 50 nm thick inner layer of nickel or palladium and an adjacent 5 to 200 nm thick outer layer of gold.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
B23K 20/00 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself consists of: (a) pure silver consisting of (a1 ) silver in an amount in the range of from 99.99 to 100 wt.-% and (a2) further components in a total amount of from 0 to 100 wt.-ppm or (b) doped silver consisting of (b1 ) silver in an amount in the range of from > 99.49 to 99.997 wt.-%, (b2) at least one doping element selected from the group consisting of calcium, nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount of from 30 to < 5000 wt.-ppm and (b3) further components in a total amount of from 0 to 100 wt.-ppm, or (c) a silver alloy consisting of (d) silver in an amount in the range of from 89.99 to 99.5 wt.-%, (c2) at least one alloying element selected from the group consisting of nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount in the range of from 0.5 to 10 wt.-% and (c3) further components in a total amount of from 0 to 100 wt.-ppm, or (d) a doped silver alloy consisting of (d1 ) silver in an amount in the range of from > 89.49 to 99.497 wt.-%, (d2) at least one doping element selected from the group consisting of calcium, nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount of from 30 to < 5000 wt.-ppm, (d3) at least one alloying element selected from the group consisting of nickel, platinum, palladium, gold, copper, rhodium and ruthenium in a total amount in the range of from 0.5 to 10 wt.-% and (d4) further components in a total amount of from 0 to 100 wt.-ppm, wherein the at least one doping element (d2) is other than the at least one alloying element (d3), wherein the individual amount of any further component is less than 30 wt.-ppm, wherein the individual amount of any doping element is at least 30 wt.-ppm, wherein all amounts in wt.-% and wt.-ppm are based on the total weight of the core, and wherein the coating layer is a double-layer comprised of a 1 to 1000 nm inner layer of gold and an adjacent 0.5 to 100 nm thick outer layer of palladium or a double-layer comprised of a 0.5 to 100 nm thick inner layer of palladium and an adjacent > 200 to 1000 nm thick outer layer of gold.
H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
B23K 35/02 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
A process for electrically connecting a contact surface of a first electronic component with a contact surface of a second electronic component comprising the subsequent steps: (1) ball-bonding a bonding wire having a diameter in the range of from 12 to 80 μιτ> to the contact surface of the first electronic component, (2) raising the ball-bonded bonding wire to produce an elongated and narrowed wire region still connected to the bonded ball, (3) disconnecting the ball and the bonding wire at the elongated and narrowed wire region by means of an EFO spark to produce and leave back a ball bump connected to the contact surface of the first electronic component, (4) ball-bonding the bonding wire with its disconnected end formed in step (3) to the contact surface of the second electronic component, (5) forming a wire loop between the ball bond formed in step (4) and the ball bump left back in step (3), and (6) stitch-bonding the bonding wire to the ball bump left back in step (3), wherein the bonding wire comprises a metal core with an outer electrically insulating coating, optionally with at least one thin layer of metal other than the core metal between the metal core surface and the outer electrically insulating coating, and wherein the core metal is selected from the group consisting of copper, silver, gold, a copper-based alloy, a silver-based alloy and a gold-based alloy.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself consists of: (a) silver in an amount of from 0.1 to 0.3 wt.-%, (b) copper in an amount in the range of from 99.64 to 99.9 wt.-%, (c) phosphorus in an amount in the range of from 0 to 100 wt.-ppm, and (d) further components (components other than silver, copper and phosphorus) in an amount in the range of from 0 to 500 wt.-ppm, wherein the individual amount of any further component is less than 30 wt.-ppm, wherein all amounts in wt.-% and wt.-ppm are based on the total weight of the core, and wherein the coating layer is a double-layer comprised of an inner layer of palladium and an adjacent outer layer of gold, wherein the weight of the inner palladium layer is in the range of 1.5 to 2.5 wt.-%, relative to the weight of the wire core, and wherein the weight of the outer gold layer is in the range of 0.09 to 0.18 wt.-%, relative to the weight of the wire core.
C21D 9/52 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articlesFurnaces therefor for wiresHeat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articlesFurnaces therefor for strips
H01L 23/00 - Details of semiconductor or other solid state devices
B23K 35/30 - Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
B23K 35/40 - Making wire or rods for soldering or welding
B23K 35/22 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
26.
SPUTTERING TARGET OF RUTHENIUM-CONTAINING ALLOY AND PRODUCTION METHOD THEREOF
The present invention relates to a Ru-Co-Cr alloy sputtering target which is used for depositing an intermediate layer of magnetic media for use in hard disk drive, wherein the sputtering target is made of a single Ru -Co-Cr alloy phase, no intermetallic phase is present and said sputtering target has an oxygen content of less than 200 ppm. The low oxygen content in the sputtering target will prevent arcing and particle generation during the sputtering process. In addition, a vacuum melting process to produce said sputtering target is also disclosed in this invention.
A silver alloyed copper wire comprising a wire core, the wire core itself consisting of: (a) silver in an amount of from 0.3 to 0.7 wt.-%, (b) copper in an amount in the range of from 99.25 to 99.7 wt.-%, and (c) 0 to 500 wt.-ppm of further components, wherein all amounts in wt.-% and wt.-ppm are based on the total weight of the core.
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
H01L 23/00 - Details of semiconductor or other solid state devices
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
C23C 30/00 - Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
HERAEUS ORIENTAL HITEC CO., LTD. (Republic of Korea)
Inventor
Tark, Yong-Deok
Kang, Il Tae
Kim, Jong Su
Jung, Hyun Seok
Kim, Tae Yeop
Zhang, Xi
Sarangapani, Murali
Abstract
An alloyed silver wire comprising or consisting of a wire core, the wire core itself consisting of: (a) palladium in an amount in the range of from 0.1 to 3 wt.-%, (b) gold in an amount in the range of from 0.1 to 3 wt.-%, (c) nickel in an amount in the range of from 20 to 700 wt.-ppm, (d) calcium in an amount in the range of from 20 to 200 wt.-ppm, (e) silver in an amount in the range of from 93.91 to 99.786 wt.-%, and (f) 0 to 100 wt.-ppm of further components, wherein all amounts in wt.-% and wt.-ppm are based on the total weight of the core, wherein the alloyed silver wire has an average diameter in the range of from 8 to 80 µm.
HERAEUS ORIENTAL HITEC CO., LTD (Republic of Korea)
Inventor
Tark, Yong-Deok
Kang, Il Tae
Kim, Jong Su
Jung, Hyun Seok
Kim, Tae Yeop
Zhang, Xi
Sarangapani, Murali
Abstract
An alloyed silver wire comprising or consisting of a wire core, the wire core itself consisting of: (a) palladium in an amount in the range of from 3 to 6 wt.-%, (b) gold in an amount in the range of from 0.2 to 2 wt.-%, (c) nickel in an amount in the range of from 20 to 700 wt.-ppm, (d) platinum in an amount in the range of from 20 to 500 wt.-ppm, (e) silver in an amount in the range of from 91.88 to 96.786 wt.-%, and (f) 0 to 100 wt.-ppm of further components, wherein all amounts in wt.-% and wt.-ppm are based on the total weight of the core, wherein the alloyed silver wire has an average diameter in the range of from 8 to 80 μm.
H01L 23/00 - Details of semiconductor or other solid state devices
C22F 1/14 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
31.
CO-BASED ALLOY SPUTTERING TARGET HAVING BORIDE AND METHOD FOR PRODUCING THE SAME
The present invention relates to a sputtering target, comprising a single phase of a cobalt-based alloy, wherein the cobalt-based alloy comprises chromium and optionally platinum as an alloying element, and boride particles, wherein the boride particles have an average particle size of 10 µm or less and are dispersed in the cobalt-based alloy.
C22C 19/07 - Alloys based on nickel or cobalt based on cobalt
C22F 1/10 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
A wire comprising a core comprising or consisting of (a) nickel in an amount in the range of from 0.005 to 5 wt.-%, (b) optionally, silver in an amount in the range of from 0.005 to 1 wt.-%, (c) copper in an amount in the range of from 94 wt.-% to 99.98 wt.-%, and (d) 0 to 100 wt.-ppm of further components, wherein all amounts in wt.-% and wt.-ppm are based on the total weight of the core, wherein the core has an average size of crystal grains in the range of from 1.5 to 30 μm, the average size determined according to the line intercept method, wherein the wire has an average diameter in the range of from 8 to 80 μm.
B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
C22C 9/06 - Alloys based on copper with nickel or cobalt as the next major constituent
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
33.
COPPER BASED BONDING WIRE FOR A SEMICONDUCTOR DEVICE
The present invention relates to a wire, comprising a copper core comprising: al.silver in an amount in the range of from 0.05 to 1.3 wt.%; or a2. Palladium, and further at least one element selected from silver and gold, wherein the amount of silver is in the range of from 100 ppm to 1.3 wt.%, wherein the amount of gold is in the range of from 100 to 1500 ppm, and wherein the amount of palladium is in the range of from 0.5 to 1.5 wt.%; wherein all amounts in wt.% and ppm are based on the total weight of the core; wherein the core has an average size of crystal grains is in the range of from 3 to 30 μιη, the average size determined according to the line intercept method. The present invention further relates to a method for manufacturing a wire as aforementioned and to an electric device comprising the wire of the invention.
B32B 15/01 - Layered products essentially comprising metal all layers being exclusively metallic
C22F 1/08 - Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
C23C 28/00 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and
H01B 1/00 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors
H01L 23/00 - Details of semiconductor or other solid state devices
34.
IMPROVED COATED COPPER WIRE FOR BONDING APPLICATIONS
The present invention relates to a wire comprising a core with a surface, a first coating layer with a layer surface and a further coating layer, wherein A) the core comprises a) at least 99.95 wt.% of copper, b) an amount X of at least one element selected from silver and gold, c) an amount Y of at least one element selected from phosphorus, magnesium and cerium, wherein the ratio of X and Y is in the range of from 0.03 to 50; B) the first coating layer is composed of at least one element selected from the group comprising of palladium, platinum and silver, wherein the first coating layer is superimposed over the surface of the core, C) the further coating layer is superimposed over the layer surface of the first coating layer, wherein the further coating layer is composed of gold. The present invention further relates to a method for manufacturing a wire as aforementioned and to an electric device comprising the wire of the invention.
C23C 28/02 - Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of main groups , or by combinations of methods provided for in subclasses and only coatings of metallic material
C25D 3/48 - ElectroplatingBaths therefor from solutions of gold
C25D 3/50 - ElectroplatingBaths therefor from solutions of platinum group metals
The invention relates to a wire and a method of manufacture, the wire comprising at least a core comprising copper (2) and elemental phosphorus; a first coating layer (3) composed of at least one element selected from the group comprising of palladium, platinum and silver; a further coating layer (41) composed of at least one element selected from silver and gold; wherein at least one of the following conditions is met: Al) the ratio of the average grain size of the crystal grains in the core and the diameter of the wire is in the range of from 0.14 - 0.28 and the relative standard deviation RSD of the average grain size is less than 0.9; or A2) the degree of recrystallization of the crystal grains in the core is in the range of from 50 to 95 %; or A3) the fraction of twin boundaries is in the range of from 2 to 25 %; or A4) 18 to 42 % of the grains of the wire are oriented in <100> direction and 27 to 38 % of the grains of the wire are oriented in <111> direction.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
36.
METAL SINTERING PREPARATION AND THE USE THEREOF OF THE CONNECTING OF COMPONENTS
A metal sintering preparation comprising (A) 70 to ≤84 % by weight of at least one metal that is present in the form of particles that comprise a coating, and (B) 6 to 30 % by weight of organic solvent, characterised in that the total amount of the coating is 0.4 to 2 % by weight, with respect to the weight of the coated metal particles, and in that 95 to 100 % by weight of the coating consist of a combination of (i) 15 to 85 parts by weight of at least one fatty acid compound having 8 to 14 carbon atoms in the non-branched fatty acid residue and (ii) 85 to 15 parts by weight of at least one fatty acid compound having 16 to 22 carbon atoms in the non-branched fatty acid residue, whereby the parts by weight of components (i) and (ii) add up to 100 parts by weight, and whereby the metal sintering preparation comprises less than 3 % by weight of NH4BF4.
A ball-bond arrangement comprising an aluminum bond pad of a semiconductor device and a wire ball-bonded to the aluminum bond pad, wherein the wire has a diameter of 10 to 80 pm and comprises a core consisting of a copper alloy consisting of 0.05 to 3 wt.-% of palladium and/or platinum with copper as the remainder to make up 100 wt.-%.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
An electrically conductive composition comprising (a) metal containing particles, (b) at least one epoxy resin, (c) at least one hardener for the at least one epoxy resin, and (d) at least one lactone.
Lead-free solder alloy comprising zinc (Zn) as the main component and aluminum (Al) as an alloying metal, wherein the solder alloy is a eutectic having a single melting point in the range of 320 to 390 °C (measured by DSC at a heating rate of 5 °C min-1).
The invention is related to a bonding wire, comprising a core with a surface, wherein the core comprises copper as a main component, wherein the core comprises copper as a main component, wherein an average size of crystal grains in the core is between 2.5 μm and 30 μm, and wherein a yield strength of the bonding wire is less than 120 MPa.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
The invention is related to a bonding wire, comprising a core (2) with a surface, wherein the core (2) comprises copper as a main component, and a coating layer (3) superimposed over the surface of the core (2), wherein the coating layer (3) comprises palladium as a main component, wherein the core (2) comprises at least 5 wt. ppm silver and at least 20 wt. ppm phosphorus as further components, wherein the wire meets the relation 0.000025 < E/(d*CAg) < 0.15, wherein E is an elongation of the wire measured in %, d is a diameter of the wire measured in μm and CAg is the silver content of the wire core measured in wt. ppm.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
The invention is related to a bonding wire, comprising a core (2) with a surface, wherein the core comprises copper as a main component, and a coating layer (3) superimposed over the surface of the core (2), wherein the coating layer (3) comprises palladium as a main component, wherein the core (2) comprises at least 5 wt.ppm silver and at least 20 wt. ppm phosphorus as further components, wherein the wire meets the relation 0.0008 < E/(d*CP) < 0.0375, wherein E is an elongation of the wire measured in %, d is a diameter of the wire measured in μm and CP is the phosphorus content of the wire core measured in wt. ppm.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
The invention is related to a bonding wire, comprising a core (2) with a surface, wherein the core (2) comprises copper as a main component, and a coating layer (3) superimposed over the surface of the core (2), wherein the coating layer (3) comprises palladium as a main component, wherein the core (2) comprises silver and phosphorus as further components, wherein the core comprises silver and phosphorus as further components, wherein the ratio between the silver content and the phosphorus content of the core is in the range of 0.03 to 2.
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
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