Crytur spol s.r.o.

Czech Republic

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IPC Class
C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals 12
G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal 12
C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method 6
C30B 29/24 - Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites 6
C30B 33/02 - Heat treatment 6
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Status
Pending 2
Registered / In Force 22
Found results for  patents

1.

Method of producing a crystal for a scintillation crystal detector and a crystal for a scintillation crystal detector

      
Application Number 18519129
Status Pending
Filing Date 2023-11-27
First Publication Date 2024-06-06
Owner
  • CRYTUR, spol. s r.o. (Czech Republic)
  • Fyzikalni ustav AV CR, v.v.i. (Czech Republic)
Inventor
  • Blazek, Karel
  • Nikl, Martin
  • Tous, Jan
  • Bartos, Karel
  • Polak, Jan
  • Marek, Tomáš

Abstract

The invention relates to a method of producing a crystal from a material with the general composition of CexGdyY1−x−yAlO3 known to the professional public for scintillation crystal detectors, which has not yet been industrially produced by the Czochralski method. The invented method makes it possible to produce crystals with a diameter larger than units of mm. In particular, the invention adds to the initial Czochralski method the steps of annealing the input raw materials as well as the controlled flow of a reducing hydrogen-argon atmosphere through a crystal growth furnace.

IPC Classes  ?

  • C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
  • C01F 17/34 - Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
  • C30B 15/20 - Controlling or regulating
  • C30B 29/24 - Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites
  • C30B 33/02 - Heat treatment
  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal

2.

LIGHT SOURCE

      
Application Number 18034716
Status Pending
Filing Date 2021-12-09
First Publication Date 2023-12-28
Owner CRYTUR, spol. s.r.o. (Czech Republic)
Inventor
  • Novotný, Stepán
  • Kubat, Jan
  • Pokorny, Martin

Abstract

A light source using a light-converting material, in particular for the conversion of collimated or focused light, which does not operate solely on the principle of geometric concentration as known from the prior art, but which reflects light away from the interface between the surface of the conversion body (1) and the surroundings due to the high refractive index of the conversion body (1), possibly by means of an applied reflective layer. The light source uses the high refractive index and high transmittance of the phosphor material as the properties necessary to direct the light in the desired direction directly by the conversion body (1) itself. The light source emits collimated or focused intense secondary light, or a homogenised mix of primary and secondary light, or it may transmit supplementary light.

IPC Classes  ?

  • F21V 9/32 - Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
  • F21V 29/70 - Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
  • F21V 29/502 - Cooling arrangements characterised by the adaptation for cooling of specific components
  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
  • C09K 11/67 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing refractory metals

3.

Calorimetric detector for measuring the energy of electrons and photons

      
Application Number 17713393
Grant Number 11885919
Status In Force
Filing Date 2022-04-05
First Publication Date 2022-10-13
Grant Date 2024-01-30
Owner CRYTUR, spol. s r.o. (Czech Republic)
Inventor
  • Houzvicka, Jindrich
  • Sykorova, Silvia
  • Hradecky, Patrik

Abstract

A calorimetric detector (1) for measuring energy of electrons and photons comprises a light energy absorber and scintillating fibers (2). The absorber is formed of a tungsten matrix (3), comprising a first assembly (4) and a second assembly (5) of parallel tungsten plates. The first assembly (4) is perpendicular to the second assembly (5) forming a grid, while each plate is in one half formed by alternating teeth (6) and gaps (7). The first assembly's (4) plates fit detachably with their teeth (6) into the gaps (7) of the second assembly (5) and vice versa. Spaces between the plates of the first assembly (4) and the second assembly (5) form longitudinal sections (8) with inner cross-section size of one pixel. The scintillating fibers (2) are longitudinally arranged, made of a single crystal material. The tungsten matrix (3) is in a protective metal frame (9) having tungsten inner walls (10).

IPC Classes  ?

  • G01T 1/20 - Measuring radiation intensity with scintillation detectors
  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal

4.

LIGHT SOURCE

      
Application Number CZ2021050147
Publication Number 2022/122058
Status In Force
Filing Date 2021-12-09
Publication Date 2022-06-16
Owner CRYTUR, SPOL.S R.O. (Czech Republic)
Inventor
  • Novotný, Štěpán
  • Kubát, Jan
  • Pokorný, Martin

Abstract

A light source using a light-converting material, in particular for the conversion of collimated or focused light, which does not operate solely on the principle of geometric concentration as known from the prior art, but which reflects light away from the interface between the surface of the conversion body (1) and the surroundings due to the high refractive index of the conversion body (1), possibly by means of an applied reflective layer. The light source uses the high refractive index and high transmittance of the phosphor material as the properties necessary to direct the light in the desired direction directly by the conversion body (1) itself. The light source emits collimated or focused intense secondary light, or a homogenised mix of primary and secondary light, or it may transmit supplementary light.

IPC Classes  ?

  • F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
  • F21K 9/69 - Details of refractors forming part of the light source
  • F21V 5/10 - Refractors for light sources comprising photoluminescent material
  • F21V 7/00 - Reflectors for light sources
  • F21V 29/70 - Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
  • F21V 29/504 - Cooling arrangements characterised by the adaptation for cooling of specific components of refractors
  • F21Y 115/10 - Light-emitting diodes [LED]
  • F21Y 115/30 - Semiconductor lasers

5.

DEVICE FOR MEASURING THE CONTENT OF NATURAL RADIOACTIVE ISOTOPES IN ROCK SAMPLE

      
Application Number CZ2021050083
Publication Number 2022/037730
Status In Force
Filing Date 2021-08-16
Publication Date 2022-02-24
Owner
  • CRYTUR, SPOL.S R.O. (Czech Republic)
  • GEORADIS S.R.O. (Czech Republic)
Inventor
  • Blažek, Karel
  • Marek, Tomáš
  • Touš, Jan
  • Brunclík, Tomáš
  • Mašek, Petr
  • Hynek, Ondřej

Abstract

The device for measuring the content of natural radioactive isotopes in a rock sample (1), especially in drill core. The device comprises at least one detection means for measuring the ionizing radiation emanating from the sample (1) and at least one means for positioning the sample (1). The device also comprises at least one shielding of the sample (1) and/or the detection means communicatively connected to at least one evaluation unit (2). The detection means consists of at least one ring-shaped assembly (3) composed of at least three ring- shaped segments arranged side by side so that the end ring-shaped segments (4) shield from the radiation background. At least one detection ring-shaped segment (5) is arranged between the end shielding ring-shaped segments (4), provided with at least one ionizing radiation detector (6). The means for positioning the sample (1) are adapted to move the sample (1) through the ring-shaped assembly (3).

IPC Classes  ?

  • G01N 33/24 - Earth materials
  • G01T 1/20 - Measuring radiation intensity with scintillation detectors

6.

High transmittance single crystal YAP scintillators

      
Application Number 16560296
Grant Number 10663605
Status In Force
Filing Date 2019-09-04
First Publication Date 2020-01-02
Grant Date 2020-05-26
Owner CRYTUR (Czech Republic)
Inventor
  • Kubat, Jan
  • Polak, Jan
  • Klejch, Martin
  • Marek, Tomas

Abstract

A single crystal yttrium aluminum perovskite scintillator has a minimum thickness of at least 5 mm and a transmittance of at least 50% at a wavelength of 370 nm. A method for fabricating the yttrium aluminum perovskite scintillator includes acquiring a yttrium aluminum perovskite single crystal boule, annealing the yttrium aluminum perovskite single crystal boule in an oxygen containing environment to obtain a partially annealed crystal, and annealing the partially annealed crystal in an inert environment or a reducing environment to obtain the yttrium aluminum perovskite single crystal scintillator.

IPC Classes  ?

  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal
  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
  • C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
  • C01F 17/34 - Aluminates, e.g. YAlO3 or Y3-xGdxAl5O12
  • C30B 29/24 - Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites
  • C30B 33/02 - Heat treatment
  • E21B 47/00 - Survey of boreholes or wells
  • G01V 5/04 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging
  • G01V 5/10 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging using primary nuclear radiation sources or X-rays using neutron sources
  • E21B 49/00 - Testing the nature of borehole wallsFormation testingMethods or apparatus for obtaining samples of soil or well fluids, specially adapted to earth drilling or wells

7.

Method of shortening scintillation response of luminescense centres and material of scintillator with shortened scintillation response

      
Application Number 15763836
Grant Number 10976451
Status In Force
Filing Date 2016-10-05
First Publication Date 2018-10-04
Grant Date 2021-04-13
Owner
  • CRYTUR, SPOL.S R.O. (Czech Republic)
  • FYZIKÁLN.Í´ÚSTAV AV CR, V.V.I (Czech Republic)
Inventor
  • Hou{hacek Over (z)}vi{hacek Over (c)}ka, Jind{hacek Over (r)}ich
  • Bla{hacek Over (z)}ek, Karel
  • Horodyský, Petr
  • Nikl, Martin
  • Bohá{hacek Over (c)}ek, Pavel

Abstract

2 ions group. Having had the luminescence centres electrons excited as a result of absorbed electromagnetic radiation, the scintillator created in this method is capable of taking away a part of the energy from the excited luminescence centres via a non-radiative energy transfer, which results in a significant shortening of the time of duration of the amplitude-dominant component of the scintillation response.

IPC Classes  ?

  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal
  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
  • G21K 4/00 - Conversion screens for the conversion of the spatial distribution of particles or ionising radiation into visible images, e.g. fluoroscopic screens

8.

High transmittance single crystal YAP scintillators

      
Application Number 15965079
Grant Number 10444379
Status In Force
Filing Date 2018-04-27
First Publication Date 2018-08-30
Grant Date 2019-10-15
Owner CRYTUR (Czech Republic)
Inventor
  • Kubat, Jan
  • Polak, Jan
  • Klejch, Martin
  • Marek, Tomas

Abstract

A single crystal yttrium aluminum perovskite scintillator has a minimum thickness of at least 5 mm and a transmittance of at least 50% at a wavelength of 370 nm. A method for fabricating the yttrium aluminum perovskite scintillator includes acquiring a yttrium aluminum perovskite single crystal boule, annealing the yttrium aluminum perovskite single crystal boule in an oxygen containing environment to obtain a partially annealed crystal, and annealing the partially annealed crystal in an inert environment or a reducing environment to obtain the yttrium aluminum perovskite single crystal scintillator.

IPC Classes  ?

  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal
  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
  • C30B 29/24 - Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites
  • C30B 33/02 - Heat treatment
  • E21B 47/00 - Survey of boreholes or wells
  • G01V 5/04 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging
  • G01V 5/10 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging using primary nuclear radiation sources or X-rays using neutron sources
  • C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
  • C01F 17/00 - Compounds of rare earth metals
  • E21B 49/00 - Testing the nature of borehole wallsFormation testingMethods or apparatus for obtaining samples of soil or well fluids, specially adapted to earth drilling or wells

9.

Optical element

      
Application Number 15735275
Grant Number 10768314
Status In Force
Filing Date 2016-06-10
First Publication Date 2018-05-03
Grant Date 2020-09-08
Owner
  • IQ Structures S.R.O. (Czech Republic)
  • Crytur SPOL. S.R.O. (Czech Republic)
Inventor
  • Houha, Roman
  • Tethal, Tomas
  • Ryzi, Zbynek
  • Kubat, Jan
  • Fidler, Tomas

Abstract

wherein the extraction structure (4, 6) is constructed and configured such that radiation at an output (19) of the body (2) is directionally modified, especially in terms of energy or intensity or of directional distribution or of both, as compared with radiation at the output of the body (2) in the absence of said extraction structure (4, 6), by interaction of radiation entering and/or propagating within and/or exiting the body (2) with the said extraction structure (4, 6), e.g. such as to reduce or ameliorate the deleterious effects of TIR within the body (2).

IPC Classes  ?

  • G01T 1/20 - Measuring radiation intensity with scintillation detectors
  • H01L 33/50 - Wavelength conversion elements
  • H01L 27/146 - Imager structures
  • F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal

10.

Scintillation detector for detection of ionising radiation

      
Application Number 15541476
Grant Number 10067246
Status In Force
Filing Date 2016-02-08
First Publication Date 2018-03-01
Grant Date 2018-09-04
Owner
  • CRYTUR, SPOL. S R.O. (Czech Republic)
  • FYZIKÁLNÍ ÚSTAV AV CR, V.V.I. (Czech Republic)
Inventor
  • Hospodková, Alice
  • Bla{circumflex Over (z)}ek, Karel
  • Hulicius, Eduard
  • Touŝ, Jan
  • Nikl, Martin

Abstract

1-x-yN.

IPC Classes  ?

  • G01T 1/29 - Measurement performed on radiation beams, e.g. position or section of the beamMeasurement of spatial distribution of radiation
  • G01T 1/164 - Scintigraphy
  • G01T 1/24 - Measuring radiation intensity with semiconductor detectors
  • H01J 37/244 - DetectorsAssociated components or circuits therefor
  • H01J 49/02 - Particle spectrometers or separator tubes Details
  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal

11.

Light source having solid-state laser irradiating single-crystal phosphor with specific composition

      
Application Number 15318418
Grant Number 10584852
Status In Force
Filing Date 2015-05-05
First Publication Date 2017-08-24
Grant Date 2020-03-10
Owner CRYTUR, SPOL.S R.O. (Czech Republic)
Inventor
  • Fidler, Tomas
  • Kubat, Jan
  • Novotny, Stepan
  • Houzvicka, Jindrich

Abstract

q.

IPC Classes  ?

  • F21V 9/30 - Elements containing photoluminescent material distinct from or spaced from the light source
  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
  • F21V 13/12 - Combinations of only three kinds of elements
  • F21K 9/64 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
  • F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
  • H01S 5/00 - Semiconductor lasers
  • F21V 3/00 - GlobesBowlsCover glasses
  • F21V 9/08 - Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing coloured light, e.g. monochromaticElements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for reducing intensity of light
  • F21V 15/01 - Housings, e.g. material or assembling of housing parts
  • F21Y 115/30 - Semiconductor lasers
  • F21K 9/61 - Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using light guides
  • F21Y 115/10 - Light-emitting diodes [LED]
  • H01S 5/022 - MountingsHousings
  • H01S 5/40 - Arrangement of two or more semiconductor lasers, not provided for in groups

12.

High transmittance single crystal YAP scintillators

      
Application Number 15378133
Grant Number 09958555
Status In Force
Filing Date 2016-12-14
First Publication Date 2017-05-04
Grant Date 2018-05-01
Owner CRYTUR (Czech Republic)
Inventor
  • Kubat, Jan
  • Polak, Jan
  • Klejch, Martin
  • Marek, Tomas

Abstract

A single crystal yttrium aluminum perovskite scintillator has a minimum thickness of at least 5 mm and a transmittance of at least 50% at a wavelength of 370 nm. A method for fabricating the yttrium aluminum perovskite scintillator includes acquiring a yttrium aluminum perovskite single crystal boule, annealing the yttrium aluminum perovskite single crystal boule in an oxygen containing environment to obtain a partially annealed crystal, and annealing the partially annealed crystal in an inert environment or a reducing environment to obtain the yttrium aluminum perovskite single crystal scintillator.

IPC Classes  ?

  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal
  • G01V 5/10 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging using primary nuclear radiation sources or X-rays using neutron sources
  • C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
  • C30B 29/24 - Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites
  • C30B 33/02 - Heat treatment
  • C01F 17/00 - Compounds of rare earth metals
  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
  • E21B 49/00 - Testing the nature of borehole wallsFormation testingMethods or apparatus for obtaining samples of soil or well fluids, specially adapted to earth drilling or wells

13.

MANNER OF SHORTENING SCINTILLATION RESPONSE OF LUMINESCENCE CENTRES AND MATERIAL OF SCINTILLATOR WITH SHORTENED SCINTILLATION RESPONSE

      
Application Number CZ2016000112
Publication Number 2017/059832
Status In Force
Filing Date 2016-10-05
Publication Date 2017-04-13
Owner
  • CRYTUR, SPOL.S R.O. (Czech Republic)
  • FYZIKÁLNÍ ÚSTAV AV ČR, V.V.I. (Czech Republic)
Inventor
  • Houžvička Jindřich
  • Blažek, Karel
  • Horodyský, Petr
  • Nikl, Martin
  • Boháček, Pavel

Abstract

Problem to be solved: Currently, the known manner of shortening the scintillation response of scintillation material is to suppress the amplitude-minor slower components (2) of the scintillation response, whereas the possibilities of significant shortening of the amplitude- dominant component of the scintillation response in this manner are limited. Solution: The invention concerns the manner of shortening the scintillation response of scintillator luminescence centres which uses co-doping with Ce or Pr together with co-doping with ions from the lanthanoids, 3d transition metals, 4d transition metals or 5s2 or 6s2 ions group. Having had the luminescence centres electrons excited as a result of absorbed electromagnetic radiation, the scintillator created in this manner is capable of taking away a part of the energy from the excited luminescence centres via a non-radiative energy transfer, which results in a significant shortening of the time of duration of the amplitude-dominant component (1) of the scintillation response.

IPC Classes  ?

  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal
  • C09K 11/08 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials

14.

OPTICAL ELEMENT

      
Application Number EP2016063295
Publication Number 2016/198598
Status In Force
Filing Date 2016-06-10
Publication Date 2016-12-15
Owner
  • IQ STRUCTURES S.R.O. (Czech Republic)
  • CRYTUR SPOL. S.R.O. (Czech Republic)
Inventor
  • Houha, Roman
  • Tethal, Tomas
  • Ryzi, Zbynek
  • Kubat, Jan
  • Fidler, Tomas

Abstract

An optical element (1) comprises: a body (2) of radiation converting monocrystalline material, e.g. of a luminescent or scintillator material, and an extraction structure (4, 6) applied to at least one output and/or input surface of the body (2) of radiation converting monocrystalline material; wherein the extraction structure (4, 6) is constructed and configured such that radiation at an output (19) of the body (2) of radiation converting monocrystalline material is directionally modified, as compared with radiation at the output of the body (2) of radiation converting monocrystalline material in the absence of said extraction structure (4, 6), by interaction of radiation entering and/or propagating within and/or exiting the body (2) of radiation converting monocrystalline material with the said extraction structure (4, 6), e.g. by: i) modifying the energy or intensity of the radiation at the output (19) of the body (2) via interaction(s) of radiation entering and/or propagating within and/or exiting the body (2) with the said surface, and/or ii) modifying the directional distribution of radiation exiting and/or entering and/or propagating within the body (2) via the said surface, e.g. such as to reduce or ameliorate the deleterious effects of TIR within the body (2).

IPC Classes  ?

  • G01T 1/20 - Measuring radiation intensity with scintillation detectors
  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal
  • H01L 33/50 - Wavelength conversion elements

15.

SCINTILLATION DETECTOR FOR DETECTION OF IONISING RADIATION

      
Application Number CZ2016000012
Publication Number 2016/127959
Status In Force
Filing Date 2016-02-08
Publication Date 2016-08-18
Owner
  • CRYTUR, SPOL. S R.O. (Czech Republic)
  • FYZIKÁLNÍ ÚSTAV AV ČR, V.V.I. (Czech Republic)
Inventor
  • Hospodková, Alice
  • Blažek, Karel
  • Hulicius, Eduard
  • Touš, Jan
  • Nikl, Martin

Abstract

The scintillation detector for the detection of ionising radiation, especially electron, X-ray or particle radiation, including a monocrystalline substrate (1), minimally one buffer layer (2), minimally one nitride semiconductor layer (3, 4, 5, 6) applied onto the substrate (1) with epitaxy which is described by the AlyInxGa1-x-yN general formula where 0 ≤ x ≤1, 0 ≤ y ≤1 and 0 ≤ x+y ≤1 is valid, where minimally two nitride semiconductor layers (3, 4) are arranged in a layered heterostructure, whose structure contains minimally one potential well for radiant recombinations of electrons and holes. In the structure there is arranged minimally one active couple of nitride semiconductor layers (3, 4) of principally the same polarisation consisting of the barrier layer (4) of the AlybInxbGa1-xb-ybN type and from layer (5) of the AlywInxwGa1-xw-ywN type representing a potential well where xb ≤ xw and yb ≤ yw is valid, or there is minimally one carrier attracting layer (7) of the AlydInxdGa1-xd-ydN type with the thickness (t3) less than 2 nm in which yd ≤ yw and xd ≥ xw+0,3 inserted in minimally one active couple of nitride semiconductor layers (4, 5) to decrease the luminescence decay time.

IPC Classes  ?

  • G01T 1/24 - Measuring radiation intensity with semiconductor detectors

16.

METHOD OF COINCIDENCE IMAGING USING SECONDARY ELECTRONS AND A DEVICE FOR EXECUTING THIS METHOD

      
Application Number CZ2015000131
Publication Number 2016/070858
Status In Force
Filing Date 2015-11-03
Publication Date 2016-05-12
Owner
  • CRYTUR, SPOL. S R.O. (Czech Republic)
  • ČESKE VYSOKÉ UČENĺ TECHNICKÉ V PRAZE (Czech Republic)
Inventor
  • Jakůbek, Jan
  • Jakůbek, Martin

Abstract

The invention relates to a method of coincidence imaging using secondary electrons (1). Part of the invention is also a device (9) for executing this method. During the passage of primary radiation (5) through a conductive planar electrode (2), secondary electrons (1) are emitted. The impact of the secondary electrons (1) onto the detector (4) is recorded. To avoid the results of the detection from being distorted by random secondary electrons (1), e.g. from thermal emission, only the coincidence groups of secondary electrons (1) that carry sufficient energy (E) to overcome the detection threshold (6) are registered.

IPC Classes  ?

  • G01T 1/24 - Measuring radiation intensity with semiconductor detectors
  • G01T 1/28 - Measuring radiation intensity with secondary-emission detectors

17.

White light emitting diode with single crystal phosphor and the manner of production

      
Application Number 14779666
Grant Number 09985185
Status In Force
Filing Date 2014-04-22
First Publication Date 2016-02-25
Grant Date 2018-05-29
Owner CRYTUR, SPOL. S.R.O. (Czech Republic)
Inventor
  • Kubat, Jan
  • Houzvicka, Jindrich
  • Polak, Jan

Abstract

3+ atoms.

IPC Classes  ?

  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
  • H01L 33/50 - Wavelength conversion elements
  • C30B 29/28 - Complex oxides with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
  • H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
  • H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
  • H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
  • H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
  • H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

18.

LIGHT SOURCE

      
Application Number CZ2015000040
Publication Number 2015/169270
Status In Force
Filing Date 2015-05-05
Publication Date 2015-11-12
Owner CRYTUR, SPOL.S R.O. (Czech Republic)
Inventor
  • Fidler, Tomáš
  • Kubát, Jan
  • Novotný, Štěpán
  • Houžvička, Jindřich

Abstract

The light source (1) is based on a high-efficiency solid-state laser source (2) of the excitation coherent radiation (3) and a single crystal phosphor (4) which is machined in a form of an optic element for emitted light parameterisation. The single crystal phosphor (4) is produced from a single crystal material on the basis of garnets of the (Ax, Lu1-x)aAlbO12:Cec general formula or from a single crystal material on the basis of perovskite structure of the B1-qAIO3:Dq general formula. The efficient light source (1) shall be utilized e.g. in the automotive industry.

IPC Classes  ?

  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals

19.

High transmittance single crystal YAP scintillators

      
Application Number 14217712
Grant Number 09541669
Status In Force
Filing Date 2014-03-18
First Publication Date 2015-09-24
Grant Date 2017-01-10
Owner CRYTUR (CS)
Inventor
  • Kubat, Jan
  • Polak, Jan
  • Klejch, Martin
  • Marek, Tomas

Abstract

A single crystal yttrium aluminum perovskite scintillator has a minimum thickness of at least 5 mm and a transmittance of at least 50% at a wavelength of 370 nm. A method for fabricating the yttrium aluminum perovskite scintillator includes acquiring a yttrium aluminum perovskite single crystal boule, annealing the yttrium aluminum perovskite single crystal boule in an oxygen containing environment to obtain a partially annealed crystal, and annealing the partially annealed crystal in an inert environment or a reducing environment to obtain the yttrium aluminum perovskite single crystal scintillator.

IPC Classes  ?

  • G01V 5/10 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging using primary nuclear radiation sources or X-rays using neutron sources
  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
  • C30B 29/24 - Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites
  • C30B 33/02 - Heat treatment
  • E21B 47/00 - Survey of boreholes or wells
  • G01V 5/04 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging
  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal
  • C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method

20.

HIGH TRANSMITTANCE SINGLE CRYSTAL YAP SCINTILLATORS

      
Application Number EP2015055718
Publication Number 2015/140227
Status In Force
Filing Date 2015-03-18
Publication Date 2015-09-24
Owner CRYTUR (Czech Republic)
Inventor
  • Kubat, Jan
  • Polak, Jan
  • Klejch, Martin
  • Marek, Tomas

Abstract

A single crystal yttrium aluminum perovskite scintillator has a minimum thickness of at least 5 mm and a transmittance of at least 50% at a wavelength of 370 nm. A method for fabricating the yttrium aluminum perovskite scintillator includes acquiring a yttrium aluminum perovskite single crystal boule, annealing the yttrium aluminum perovskite single crystal boule in an oxygen containing environment to obtain a partially annealed crystal, and annealing the partially annealed crystal in an inert environment or a reducing environment to obtain the yttrium aluminum perovskite single crystal scintillator.

IPC Classes  ?

  • C30B 29/24 - Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites
  • C04B 35/115 - Translucent or transparent products
  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals
  • C30B 33/02 - Heat treatment
  • G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal
  • G01V 5/10 - Prospecting or detecting by the use of ionising radiation, e.g. of natural or induced radioactivity specially adapted for well-logging using primary nuclear radiation sources or X-rays using neutron sources

21.

WHITE LIGHT EMITTING DIODE WITH SINGLE CRYSTAL PHOSPHOR AND THE MANNER OF PRODUCTION

      
Application Number CZ2014000039
Publication Number 2014/173376
Status In Force
Filing Date 2014-04-22
Publication Date 2014-10-30
Owner CRYTUR SPOL. S R.O. (Czech Republic)
Inventor
  • Kubát, Jan
  • Houžvička, Jindřich
  • Polák, Jan

Abstract

According to the invention, the diode with a single crystal phosphor placed over the chip selected from the InGaN, GaN or AIGaN group comprises the fact that the single crystal phosphor (21) is created from the monocrystalline ingot (51), created by LuYAG and/or YAP and/or GGAG masters, doped with the atoms selected from the Ce 3+, Ti 3+, Cr 3+, Eu 2+, Sm 2+, B 3+, C, Gd 3+or Ga3+ group, grown from the melt with the method selected from the Czochralski, HEM, Badgasarov, Kyropoulos or EFG group, when the L u 3+, y3+ and A1 3+ atoms can be replaced in the master up to the amount of 99.9 % with the B 3+, Gd 3+ or Ga3+ atoms. The composition and manner of production of the phosphor (21), treatment and shape of its surface and construction of the whole diode ensure the extraction of the converted light in the direction from the InGaN chip (13) itself of the diode towards the object that is being illuminated and limit the total reflection effect on the interface of the single crystal phosphor (21) and encapsulant (31) or single crystal phosphor (21) and surrounding environment (44).

IPC Classes  ?

  • C09K 11/77 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing rare earth metals

22.

Method for the preparation of doped garnet structure single crystals with diameters of up to 500 mm

      
Application Number 13979751
Grant Number 09499923
Status In Force
Filing Date 2012-01-10
First Publication Date 2013-11-07
Grant Date 2016-11-22
Owner CRYTUR SPOL S.R.O. (Czech Republic)
Inventor
  • Hou{hacek Over (z)}vi{hacek Over (c)}ka, Jind{hacek Over (r)}ich
  • Barto{hacek Over (s)}, Karel

Abstract

Preparation of lutetium and yttrium aluminate single crystals doped with rare earth oxides and transition elements consists in the preparation of oxide mixture sinter which is melted throughout and homogenized for a period of at least one hour. The crystal growth rate and broadening of the crystal cone are maintained uniform at an angle of at least 60° from the crystal axis up to a diameter of at least 80% of the crucible diameter which is at least 100 mm. The completion of the process occurs by separating the crystal from the melt while the crystal continues to be positioned inside the crucible in the zone wherein it was grown, and wherein final tempering of the crystal also takes place.

IPC Classes  ?

  • C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal
  • C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
  • C30B 29/28 - Complex oxides with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

23.

PREPARATION OF DOPED GARNET STRUCTURE SINGLE CRYSTALS WITH DIAMETERS OF UP TO 500 MM

      
Application Number CZ2012000006
Publication Number 2012/110009
Status In Force
Filing Date 2012-01-10
Publication Date 2012-08-23
Owner CRYTUR SPOL.S R.O. (Czech Republic)
Inventor
  • Houžvička, Jindřich
  • Bartoš, Karel

Abstract

Preparation of lutetium and yttrium aluminate single crystals doped with rare earth oxides and transition elements consists in the preparation of oxide mixture sinter which is melted throughout and homogenized for a period of at least one hour. The single crystal seed has the minimum dimensions of 8 x 8 mm and length of 100 mm. The crystal growth rate and broadening of the crystal cone are maintained uniform at an angle of at least 60o from the crystal axis up to a diameter of at least 80% of the crucible diameter which is at least 100 mm. Thereafter the diameter thereof continues to be maintained by temperature regulation at the crystal/melt interface and by the crystal pulling and rotation speeds. The completion of the process occurs by separating the crystal from the melt while the crystal continues to be positioned inside the crucible in the zone wherein it was grown, and wherein final tempering of the crystal also takes place.

IPC Classes  ?

  • C30B 15/00 - Single-crystal growth by pulling from a melt, e.g. Czochralski method
  • C30B 29/28 - Complex oxides with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

24.

SCINTILLATION DETECTION UNIT FOR THE DETECTION OF BACK- SCATTERED ELECTRONS ELECTRON OR ION MICROSCOPES

      
Application Number CZ2011000098
Publication Number 2012/045291
Status In Force
Filing Date 2011-10-06
Publication Date 2012-04-12
Owner
  • TESCAN A.S. (Czech Republic)
  • CRYTUR, SPOL. S R.O. (Czech Republic)
Inventor
  • Zadražil, Martin
  • Dokulilová, Silvie
  • Blažek, Karel
  • Horodyský, Petr

Abstract

A scintillation detection unit for the detection of back-scattered electrons for electron and ion microscopes having a column (2) with longitudinal axis (3), in which the scintillation detection unit (1) consists of body (5) and at least one system (6) for processing the light signal comprising a photodetector or a photodetector preceded with additional optical members where the body (5) is at least partly made of scintillation material and is at least partly situated in a column (2) of an electron or ion microscope and is made up of at least one hollow part (11,11.1,11.2,11.3,11.4). The height (h) of the body (5) of scintillation detection unit (1) measured in the direction of longitudinal axis (3) is greater than one-and-a-half times the greatest width (w) measured in the direction perpendicular to the longitudinal axis (3) of the hollow part (11,11.1,11.2,11.3,11.4) with the greatest width. ˙

IPC Classes  ?

  • H01J 37/244 - DetectorsAssociated components or circuits therefor