JSR Corporation

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IPC Class
G03F 7/004 - Photosensitive materials 364
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists 356
G03F 7/20 - ExposureApparatus therefor 254
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or 234
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable 141
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1.

METHOD FOR SEPARATING EXTRACELLULAR VESICLES AND CARRIER USED THEREFOR

      
Application Number JP2025016575
Publication Number 2025/234405
Status In Force
Filing Date 2025-05-02
Publication Date 2025-11-13
Owner JSR CORPORATION (Japan)
Inventor
  • Yasuoka, Jun-Ichi
  • Arai, Takayuki
  • Tokunaga, Takeshi
  • Iinuma, Ryousuke
  • Shimada, Mibuko
  • Suda, Kiyoshi

Abstract

A method for separating extracellular vesicles comprises: bringing a sample containing extracellular vesicles into contact with a carrier comprising a ligand for capturing extracellular vesicles; and bringing the carrier after being brought into contact with the sample into contact with a buffer containing a saccharide, wherein the saccharide is at least one saccharide selected from the group consisting of glucose, glucosamine, N-acetylglucosamine, and oligosaccharides and polysaccharides derived therefrom, and the ligand is capable of binding to the saccharide.

IPC Classes  ?

  • G01N 33/53 - ImmunoassayBiospecific binding assayMaterials therefor
  • C12N 1/02 - Separating microorganisms from their culture media
  • C12N 5/07 - Animal cells or tissues
  • G01N 33/543 - ImmunoassayBiospecific binding assayMaterials therefor with an insoluble carrier for immobilising immunochemicals

2.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number JP2025016536
Publication Number 2025/234401
Status In Force
Filing Date 2025-05-01
Publication Date 2025-11-13
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori, Katsuaki
  • Shiratani, Motohiro
  • Omiya, Takuya

Abstract

This radiation-sensitive composition comprises: a compound represented by formula (1) and a radiation-sensitive acid-generating body formed from a radiation-sensitive cation and an organic anion having a steroid skeleton or a 9,10-ethanoanthracene skeleton. In formula (1), R11, R12, and R13 are each independently, a C1-20 monovalent aliphatic hydrocarbon group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 12/24 - Phenols or alcohols
  • C08F 20/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

3.

RESIN COMPOSITION, CURED PRODUCT, PREPREG, COPPER-CLAD LAMINATE, AND INTERLAYER INSULATING FILM

      
Application Number JP2025016993
Publication Number 2025/234476
Status In Force
Filing Date 2025-05-09
Publication Date 2025-11-13
Owner JSR CORPORATION (Japan)
Inventor
  • Satonaka, Eri
  • Kameyama, Takeru
  • Fujitomi, Shintarou
  • Maruyama, Youichirou
  • Ishimura, Toshiki
  • Itou, Natsuko
  • Tange, Satoshi

Abstract

Disclosed is a resin composition which contains: a polymer (A) that has an ethylenically unsaturated double bond, and has a weight average molecular weight (Mw) of 1,500-500,000; and a compound (B) that has two or more groups represented by formula (Y) and satisfies conditions (α1), (α2), and (α3). In formula (Y), R31 represents a hydrogen atom or an alkyl group having 1-5 carbon atoms, and * represents a bond with another moiety in the compound (B). (α1) The molecular weight is 1,000 or less. (α2) The solubility in toluene at 25°C is 20 mass% or more. (α3) The 1% weight loss temperature is more than 130°C as determined by simultaneous thermogravimetric-differential thermal analysis (TG/DTA).

IPC Classes  ?

  • C08F 290/06 - Polymers provided for in subclass
  • B32B 5/28 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by the presence of two or more layers which comprise fibres, filaments, granules, or powder, or are foamed or specifically porous one layer being a fibrous or filamentary layer impregnated with or embedded in a plastic substance
  • B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
  • C08J 5/24 - Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs

4.

COMPOUND AND METHOD FOR PRODUCING COMPOUND

      
Application Number JP2025016992
Publication Number 2025/234475
Status In Force
Filing Date 2025-05-09
Publication Date 2025-11-13
Owner JSR CORPORATION (Japan)
Inventor
  • Kameyama, Takeru
  • Fujitomi, Shintarou
  • Maruyama, Youichirou

Abstract

This compound is represented by formula (1A), formula (1B), formula (2-1), or formula (2-2). The explanation for each substituent in the formulae is as described in the specification.

IPC Classes  ?

  • C07C 25/24 - Halogenated aromatic hydrocarbons with unsaturated side chains
  • C07C 2/64 - Addition to a carbon atom of a six-membered aromatic ring
  • C07C 13/19 - Monocyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with a six-membered ring with a cyclohexane ring substituted by unsaturated hydrocarbon groups
  • C07C 13/567 - FluorenesCompletely or partially hydrogenated fluorenes
  • C07C 17/266 - Preparation of halogenated hydrocarbons by reactions involving an increase in the number of carbon atoms in the skeleton by condensation reactions of hydrocarbons and halogenated hydrocarbons
  • C08G 61/00 - Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule

5.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND

      
Application Number JP2025009886
Publication Number 2025/234216
Status In Force
Filing Date 2025-03-14
Publication Date 2025-11-13
Owner JSR CORPORATION (Japan)
Inventor
  • Kiriyama Kazuya
  • Taniguchi Takuhiro
  • Hayashibara Tomoya
  • Shiratani Motohiro

Abstract

This radiation-sensitive composition comprises a polymer that, when reacted with an acid, exhibits a change in solubility in a developing solution. At least one of the polymer and a component other than the polymer has a partial structure represented by formula (1).

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 63/70 - Monocarboxylic acids
  • C07C 65/03 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring
  • C07C 65/05 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring o-Hydroxy carboxylic acids
  • C07C 65/21 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups
  • C07C 309/06 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
  • C07C 309/09 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton
  • C07C 309/11 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton with the oxygen atom of at least one of the etherified hydroxy groups further bound to a carbon atom of a six-membered aromatic ring
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 309/39 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing halogen atoms bound to the carbon skeleton
  • C07C 309/41 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton
  • C07C 309/58 - Carboxylic acid groups or esters thereof
  • C07C 317/22 - SulfonesSulfoxides having sulfone or sulfoxide groups and singly-bound oxygen atoms bound to the same carbon skeleton with sulfone or sulfoxide groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 317/44 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems
  • C07D 317/56 - Radicals substituted by sulfur atoms
  • C08F 12/30 - Sulfur
  • C08F 20/38 - Esters containing sulfur
  • C08F 220/10 - Esters
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

6.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND

      
Application Number JP2025016246
Publication Number 2025/234364
Status In Force
Filing Date 2025-04-28
Publication Date 2025-11-13
Owner JSR CORPORATION (Japan)
Inventor
  • Kinoshita,natsuko
  • Nakagawa,atsushi
  • Shiratani,motohiro
  • Nishikori,katsuaki

Abstract

Provided are: a radiation-sensitive composition having good storage stability and having excellent sensitivity, CDU, and under-exposure CDU when forming a pattern; a pattern formation method; and an onium salt compound. This radiation-sensitive composition comprises a solvent and a polymer including a structural unit (I) having an acid-dissociable group. The polymer includes an iodo group. Further, at least the radiation-sensitive composition contains an onium salt compound including a partial structure (a) represented by formula (a), or the polymer includes a structural unit (II) including the partial structure (a) represented by formula (a).

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

7.

METHOD FOR DETERMINING RESPONSIVENESS TO BLEACH THERAPY

      
Application Number JP2025011370
Publication Number 2025/220433
Status In Force
Filing Date 2025-03-24
Publication Date 2025-10-23
Owner
  • JSR CORPORATION (Japan)
  • KEIO UNIVERSITY (Japan)
  • JAPAN AS REPRESENTED BY DIRECTOR-GENERAL NATIONAL INSTITUTE OF INFECTIOUS DISEASES (Japan)
Inventor
  • Aoto, Yoshimasa
  • Masuda, Kanae
  • Isayama, Jun
  • Kawasaki, Hiroshi
  • Kawakami, Eiryo
  • Amagai, Masayuki
  • Sugai, Motoyuki
  • Hisatsune, Junzo
  • Yu, Liansheng

Abstract

The present invention addresses the problem of providing a method for determining a person showing responsiveness to bleach therapy. The present invention encompasses a method for determining responsiveness to bleach therapy, the method involving a determination step a in which, when a bacterium contained in a subject sample has one or more selected from the base sequences described in SEQ ID NO:1 to SEQ ID NO:173 and base sequences showing 80% or greater identity with said base sequences, it is determined that the subject shows responsiveness to bleach therapy.

IPC Classes  ?

  • C12N 15/11 - DNA or RNA fragmentsModified forms thereof
  • C12Q 1/686 - Polymerase chain reaction [PCR]

8.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND FILM-FORMING COMPOSITION

      
Application Number JP2025013523
Publication Number 2025/220496
Status In Force
Filing Date 2025-04-02
Publication Date 2025-10-23
Owner JSR CORPORATION (Japan)
Inventor
  • Kimata,hironori
  • Ozaki,yuki
  • Serizawa,ryuichi

Abstract

The present invention provides: a semiconductor substrate manufacturing method using a film-forming composition which has good storage stability and can form a film that is excellent in terms of film formation properties, etching resistance and basic liquid resistance; and a film-forming composition. This semiconductor substrate manufacturing method includes a step for coating a substrate with a film-forming composition. The film-forming composition contains a solvent and a metal compound which is composed of at least a metal atom and a polyhydric alcohol, the metal atom being at least one metal that is selected from the group consisting of magnesium, calcium, strontium, barium, scandium, yttrium, zirconium, hafnium, manganese, cobalt, nickel, zinc, aluminum, gallium, indium, tin, and lead.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08G 65/34 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives

9.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, POLYMER, AND COMPOUND

      
Application Number JP2025014439
Publication Number 2025/220599
Status In Force
Filing Date 2025-04-11
Publication Date 2025-10-23
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori,katsuaki
  • Omiya,takuya
  • Takahashi,mari
  • Yamaguchi,shogo

Abstract

Provided are: a radiation-sensitive composition capable of exhibiting sensitivity, CDU, overexposure CDU, and development defect suppressing properties at levels equal to or greater than conventional levels, when forming a pattern; a pattern formation method; a polymer; and a compound. This radiation-sensitive composition comprises a first polymer having a structural unit (I) containing an acid-dissociable group, a second polymer different from the first polymer, and a solvent, wherein: the second polymer has a structural unit (i) containing an amide bond, an ester bond, and a fluorine atom; and the weight-average molecular weight of the second polymer in terms of polystyrene is at most 20,000.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07C 233/49 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom having the carbon atom of the carboxamide group bound to a carbon atom of an acyclic unsaturated carbon skeleton
  • C07C 255/16 - Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms containing cyano groups and singly-bound oxygen atoms bound to the same carbon atom of an acyclic carbon skeleton
  • C07C 271/22 - Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of hydrocarbon radicals substituted by carboxyl groups
  • C07C 275/28 - Derivatives of urea, i.e. compounds containing any of the groups the nitrogen atoms not being part of nitro or nitroso groups having nitrogen atoms of urea groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
  • C08F 212/08 - Styrene
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

10.

METHOD FOR PRODUCING ORGANOID AND CULTURE MEDIUM FOR PRODUCING ORGANOID

      
Application Number JP2025013081
Publication Number 2025/211311
Status In Force
Filing Date 2025-03-31
Publication Date 2025-10-09
Owner
  • KEIO UNIVERSITY (Japan)
  • JSR CORPORATION (Japan)
Inventor
  • Sato Toshiro
  • Arai Kazuya
  • Okada Ryo

Abstract

Provided are: a method for producing an organoid, the method comprising a step for culturing somatic stem cells in a culture medium containing an agonist of the interferon-γ receptor; and a culture medium for producing an organoid, the culture medium containing an agonist of the interferon-γ receptor.

IPC Classes  ?

  • C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues
  • C12N 5/074 - Adult stem cells

11.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM

      
Application Number JP2025013343
Publication Number 2025/211358
Status In Force
Filing Date 2025-04-01
Publication Date 2025-10-09
Owner JSR CORPORATION (Japan)
Inventor
  • Hirasawa,kengo
  • Tanaka,ryotaro
  • Oka,yuki

Abstract

Provided are: a method for producing a semiconductor substrate using a composition capable of forming a film having excellent embedding properties and flatness; and a composition for forming a resist underlayer film. The method for producing a semiconductor substrate comprises: a step for directly or indirectly coating a substrate with a composition for forming a resist underlayer film; a step for forming a resist pattern directly or indirectly on the resist underlayer film formed by the coating step; and a step for performing etching using the resist pattern as a mask. The composition for forming a resist underlayer film contains a nitrogen-containing compound and a solvent, and the nitrogen-containing compound comprises a partial structure that is represented by formula (1). (In formula (1), Ar1is a substituted or unsubstituted aromatic ring having 3 to 40 carbon atoms. Ar2 is a substituted or unsubstituted divalent aromatic ring having 3 to 40 carbon atoms. Each * is a bond with another structure in the nitrogen-containing compound.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C07D 215/14 - Radicals substituted by oxygen atoms
  • C07D 215/20 - Oxygen atoms
  • C07D 215/22 - Oxygen atoms attached in position 2 or 4
  • C07D 215/50 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 4
  • C08G 14/073 - Amines

12.

METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE

      
Application Number JP2025009535
Publication Number 2025/204961
Status In Force
Filing Date 2025-03-13
Publication Date 2025-10-02
Owner JSR CORPORATION (Japan)
Inventor
  • Shimizu, Makoto
  • Ichinohe, Daigo

Abstract

Provided is an electronic device in which an electronic component group is simply and satisfactorily bonded. A first electronic component (10) having a first insulator (12) and a first conductor (13) on a first-surface (10a) side, and a second electronic component (20) having a second insulator (22) and a second conductor (23) on a second-surface (20a) side, are prepared. A bonding layer (30) composed of an organic compound is provided to the first insulator (12), and the first surface (10a) and the second surface (20a) are made to face each other with the bonding layer (30) interposed therebetween such that the first insulator (12) and the second insulator (22) face each other and the first conductor (13) and the second conductor (23) face each other. Heat treatment is performed, the first insulator (12) and the second insulator (22) are bonded by the bonding layer (30), and the first conductor (13) and the second conductor (23) are brought into contact and bonded within the bonding layer (30) by thermal expansion. There is thereby obtained an electronic device (1) in which the first electronic component (10) and the second electronic component (20) are bonded.

IPC Classes  ?

  • H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
  • H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
  • H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
  • H05K 1/14 - Structural association of two or more printed circuits
  • H05K 1/18 - Printed circuits structurally associated with non-printed electric components

13.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND METHOD FOR PRODUCING COMPOUND

      
Application Number JP2025009926
Publication Number 2025/205091
Status In Force
Filing Date 2025-03-14
Publication Date 2025-10-02
Owner JSR CORPORATION (Japan)
Inventor Hirasawa,kengo

Abstract

Provided are: a method for producing a semiconductor substrate that can form a film that exhibits excellent embedding properties, an excellent heat resistance, an excellent etching resistance, and an excellent bending resistance; a composition; and a method for producing a compound. The method for producing a semiconductor substrate comprises: a step for directly or indirectly applying a resist underlayer film-forming composition on a substrate; a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the application step; and a step for carrying out etching by using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound represented by formula (1A) or (1B). (In formula (1A), Ar1Aand Ar2Aare each independently a substituted or unsubstituted C3-20 aromatic ring. Y is a single bond, an oxygen atom, a sulfur atom, or a methylene group. X is an n-valent organic group having an aromatic ring. A bond extending from X extends from the aromatic ring in X. n is an integer from 1-10. In formula (1B), Ar1Band Ar2B are each independently an unsubstituted C3-20 monovalent aromatic ring group or a C3-20 monovalent aromatic ring group substituted by a group selected from the group consisting of the hydroxy group and halogen atoms. X and n are defined as for formula (1A)).

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C07C 2/86 - Preparation of hydrocarbons from hydrocarbons containing a smaller number of carbon atoms by condensation between a hydrocarbon and a non-hydrocarbon
  • C07C 37/16 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms by condensation involving hydroxy groups of phenols or alcohols or the ether or mineral ester group derived therefrom
  • C07C 39/16 - Bis(hydroxy phenyl)alkanesTris(hydroxy phenyl)alkanes
  • C07C 39/23 - Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic, containing six-membered aromatic rings and other rings, with unsaturation outside the aromatic rings
  • C07C 41/30 - Preparation of ethers by reactions not forming ether-oxygen bonds by increasing the number of carbon atoms, e.g. by oligomerisation
  • C07C 43/21 - Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing rings other than six-membered aromatic rings
  • C07C 67/28 - Preparation of carboxylic acid esters by modifying the hydroxylic moiety of the ester, such modification not being an introduction of an ester group
  • C07C 67/035 - Preparation of carboxylic acid esters by reacting carboxylic acids or symmetrical anhydrides with saturated hydrocarbons
  • C07D 311/82 - Xanthenes

14.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number JP2025011581
Publication Number 2025/205681
Status In Force
Filing Date 2025-03-24
Publication Date 2025-10-02
Owner JSR CORPORATION (Japan)
Inventor
  • Nakanishi, Makoto
  • Kiriyama, Kazuya
  • Shiratani, Motohiro

Abstract

This radiation-sensitive composition comprises a polymer (P) including a structural unit having an acid-dissociable group, satisfies at least one among a first requirement, a second requirement, and a third requirement, and includes a specific cation having an acid-dissociable group or the like and an iodine group in at least one of a structural unit derived from a radiation-sensitive onium salt in the polymer (P), a structural unit derived from a radiation-sensitive onium salt in a polymer (Q1), and a radiation-sensitive onium salt (C). First requirement: The polymer (P) includes a structural unit derived from a radiation-sensitive onium salt. Second requirement: A polymer different from the polymer (P) and including a structural unit derived from a radiation-sensitive onium salt is contained. Third requirement: A radiation-sensitive onium salt (C) that is non-polymeric is contained.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/10 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton with the oxygen atom of at least one of the etherified hydroxy groups further bound to an acyclic carbon atom
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 309/42 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton having the sulfo groups bound to carbon atoms of non-condensed six-membered aromatic rings
  • C07C 381/12 - Sulfonium compounds
  • C07D 295/26 - Sulfur atoms
  • C07D 309/12 - Oxygen atoms only hydrogen atoms and one oxygen atom directly attached to ring carbon atoms, e.g. tetrahydropyranyl ethers
  • C07D 317/08 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
  • C07D 317/70 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with ring systems containing two or more relevant rings
  • C07D 321/10 - Seven-membered rings condensed with carbocyclic rings or ring systems
  • C07D 327/04 - Five-membered rings
  • C07D 333/76 - Dibenzothiophenes
  • C07D 493/08 - Bridged systems
  • C08F 212/02 - Monomers containing only one unsaturated aliphatic radical
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/10 - Esters
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

15.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND COMPOUND

      
Application Number JP2025011582
Publication Number 2025/205682
Status In Force
Filing Date 2025-03-24
Publication Date 2025-10-02
Owner JSR CORPORATION (Japan)
Inventor
  • Nakagawa, Atsushi
  • Nishikori, Katsuaki
  • Shiratani, Motohiro

Abstract

Provided is a radiation-sensitive composition which contains a polymer (A) that includes: a first structural unit that is at least one type selected from the group consisting of a structural unit represented by formula (1-1) and a structural unit represented by formula (1-2); a second structural unit represented by formula (2); and a third structural unit having an acid-dissociable group, and which satisfies one or more of a first requirement, a second requirement and a third requirement. At least one selected from the group consisting of the polymer (A), a structural unit (b1) and a radiation-sensitive onium salt (C) has an iodine atom. First requirement: the polymer (A) also includes a fourth structural unit derived from a radiation-sensitive onium salt. Second requirement: a polymer (E1) which is different from the polymer (A) and which includes the structural unit (b1) derived from a radiation-sensitive onium salt is also contained. Third requirement: a non-polymer radiation-sensitive onium salt (C) is also contained.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 232/08 - Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

16.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number JP2025005484
Publication Number 2025/204295
Status In Force
Filing Date 2025-02-18
Publication Date 2025-10-02
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori, Katsuaki
  • Shiratani, Motohiro
  • Omiya, Takuya

Abstract

This radiation-sensitive composition contains: a polymer (F) comprising a structural unit having a fluorine atom and an alkali dissociable group; and a compound represented by formula (1). In formula (1), R11, R12, and R13 are each independently a C1-20 monovalent aliphatic hydrocarbon group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 220/22 - Esters containing halogen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

17.

RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN

      
Application Number JP2025005483
Publication Number 2025/197401
Status In Force
Filing Date 2025-02-18
Publication Date 2025-09-25
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori, Katsuaki
  • Shiratani, Motohiro
  • Omiya, Takuya

Abstract

This radiation-sensitive composition contains: a polymer containing at least one structural unit selected from the group consisting of structural units represented by formula (1-1) to formula (1-3); and a compound represented by formula (2). In the formulae, A1represents an (n1+n2+1)-valent aromatic ring group. R2is an acid-dissociable group. A2is a substituted or unsubstituted aromatic ring group. R5and R6are alkyl groups having 1 to 10 carbon atoms, or are combined with each other to represent an aliphatic ring structure constituted together with carbon atoms to which R5and R6are bonded. However, R8and R9are combined with each other to form an aliphatic ring structure, and either the aliphatic ring structure has an ethylenically unsaturated bond or R10has an ethylenically unsaturated bond. R11, R12and R13 are monovalent aliphatic hydrocarbon groups having 1 to 20 carbon atoms.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

18.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND METHOD FOR PRODUCING NITROGEN-CONTAINING COMPOUND

      
Application Number JP2025007929
Publication Number 2025/197551
Status In Force
Filing Date 2025-03-05
Publication Date 2025-09-25
Owner JSR CORPORATION (Japan)
Inventor
  • Hirasawa,kengo
  • Tanaka,ryotaro
  • Oka,yuki

Abstract

The present invention provides: a method for manufacturing a semiconductor substrate, in which a composition that is capable of forming a film having excellent embedding properties and excellent flatness is used; a composition for forming a resist underlayer film; and a method for producing a nitrogen-containing compound. This method for manufacturing a semiconductor substrate includes: a step for directly or indirectly coating a substrate with a composition for forming a resist underlayer film; a step for forming a resist pattern directly or indirectly on the resist underlayer film formed by the coating step; and a step for performing etching using the resist pattern as a mask. The composition for forming a resist underlayer film contains a nitrogen-containing compound and a solvent. The nitrogen-containing compound includes a partial structure that is represented by formula (1). (In formula (1), Ar1is a substituted or unsubstituted aromatic ring having 3 to 40 carbon atoms. Ar2 is a substituted or unsubstituted divalent aromatic ring having 3 to 40 carbon atoms. X is a divalent organic group having 1 to 40 carbon atoms. Each * indicates an atomic bond with another structure in the nitrogen-containing compound.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C07D 239/74 - QuinazolinesHydrogenated quinazolines with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, attached to ring carbon atoms of the hetero ring
  • C07D 239/82 - Oxygen atoms with an aryl radical attached in position 4
  • C07D 413/14 - Heterocyclic compounds containing two or more hetero rings, at least one ring having nitrogen and oxygen atoms as the only ring hetero atoms containing three or more hetero rings
  • G03F 7/26 - Processing photosensitive materialsApparatus therefor

19.

METHOD FOR PRODUCING FOAMED PARTICLE MOLDED BODY

      
Application Number JP2025008325
Publication Number 2025/197592
Status In Force
Filing Date 2025-03-06
Publication Date 2025-09-25
Owner JSP CORPORATION (Japan)
Inventor
  • Ogaki Yoshihisa
  • Etsure Daisuke
  • Nagashima Rie

Abstract

Provided is a method for producing a foamed particle molded body enabling a reduction in the amount of steam supplied into a mold and an improvement in energy loss during in-mold molding. The method involves filling a cavity (10) of a split mold (100) composed of a first mold (30A) and a second mold (30B) with thermoplastic resin foam particles (50) and performing heating using steam to carry out in-mold molding. The first mold (30A) and/or the second mold (30B) have an exhaust chamber (20) provided so as to allow ventilation from the cavity (10). The method includes: a pressurizing step of supplying a pressurizing gas other than steam into the cavity (10) to adjust the pressure in the cavity (10) filled with the foam particles (50) to a pressure (P1) higher than atmospheric pressure; and a heating step of heating the foam particles (50) by supplying steam at a pressure (P2) higher than the pressure (P1) into the cavity (10) adjusted to the pressure (P1) in the pressurizing step, and exhausting the steam supplied into the cavity (10) to the exhaust chamber (20). In the heating step, the steam at the pressure (P2) is supplied into the cavity (10) while adjusting the pressure in the exhaust chamber (20) to a pressure (P3) higher than atmospheric pressure and lower than the pressure (P2).

IPC Classes  ?

  • B29C 44/60 - Measuring, controlling or regulating
  • B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming

20.

DIFFRACTIVE OPTICAL ELEMENT AND METHOD FOR MANUFACTURING DIFFRACTIVE OPTICAL ELEMENT

      
Application Number JP2025008494
Publication Number 2025/197616
Status In Force
Filing Date 2025-03-07
Publication Date 2025-09-25
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
Inventor
  • Rittaporn,itti
  • Kishida,hiroyuki
  • Ooishi,youhei
  • Hasegawa,kouichi
  • Konishi,kuniaki
  • Yamada,ryohei

Abstract

Provided are: a diffractive optical element that is thin, realizes high mass productivity, has a high light-condensing performance which makes it possible to cope with a minute pixel pitch, and is capable of condensing light of a plurality of wavelengths; and a method for manufacturing the diffractive optical element. The diffractive optical element comprises: a base board which allows entering light to pass therethrough; and a resin layer which is formed from a curable resin composition, forms recesses and projections on a main surface of the base board, and also forms a diffraction pattern that is substantially concentrical when viewed in a direction orthogonal to the main surface of the base board. The diffraction pattern is divided into a plurality of pattern regions in the circumferential direction. The plurality of pattern regions at least include: a first pattern region which has a shape of a Fresnel zone plate, and which corresponds to light that is included in the entering light and that belongs to a first wavelength range; and a second pattern region which has a shape of a Fresnel zone plate, and which corresponds to light that is included in the entering light and that belongs to a second wavelength range different from the first wavelength range.

IPC Classes  ?

21.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2025008002
Publication Number 2025/192401
Status In Force
Filing Date 2025-03-05
Publication Date 2025-09-18
Owner JSR CORPORATION (Japan)
Inventor
  • Shiratani Motohiro
  • Ito Ryo
  • Yonezawa Fumiko
  • Nakagawa Atsushi

Abstract

This radiation-sensitive composition contains a polymer that has: a structural unit that contains an acid-dissociable group; and a structural unit that contains a radiation-sensitive onium cation and a sulfonate anion. The radiation-sensitive composition additionally contains a carboxy group-containing compound different from the polymer.

IPC Classes  ?

22.

POLYMER BEAD TREATMENT METHOD, POLYMER BEAD PRODUCTION METHOD, AND POLYMER BEAD TREATMENT DEVICE

      
Application Number JP2025009378
Publication Number 2025/192654
Status In Force
Filing Date 2025-03-12
Publication Date 2025-09-18
Owner
  • JSP INTERNATIONAL SARL (France)
  • JSP CORPORATION (Japan)
Inventor
  • Praus Jan
  • Janousek Jan
  • Dzikowski Pascal
  • Vopicka Ondrej

Abstract

Provided are an improved method and device for treating polymer beads by applying pressure. A polymer bead treatment method according to the present invention applies pressure to polymer beads having closed cells under a specific pressure condition in a specific pressure container. The polymer bead treatment method comprises: a step for acquiring at least one parameter related to the deformation behavior during application of pressure to the polymer beads; and a step for using the parameter related to the deformation behavior to determine gas information, which indicates at least one selected from the concentration, amount, and pressure of a gas in the closed cells of the polymer beads, during application of pressure to the polymer beads.

IPC Classes  ?

  • B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming

23.

METHOD FOR PRODUCING SURFACE-TREATED SUBSTRATE

      
Application Number JP2025007128
Publication Number 2025/187551
Status In Force
Filing Date 2025-02-28
Publication Date 2025-09-11
Owner JSR CORPORATION (Japan)
Inventor
  • Yamada,shuhei
  • Yoneda,eiji

Abstract

Provided is a method that allows selective modification of a substrate surface using an environmentally friendly component. This method for producing a surface-treated substrate comprises: a vaporizing step for vaporizing a nitrogen-containing compound; and a step for selectively modifying the surface of the substrate by causing contact between the substrate and the nitrogen-containing compound, the surface of the substrate including a first region and a second region made from a material different from the first region.

IPC Classes  ?

  • C23C 16/04 - Coating on selected surface areas, e.g. using masks
  • C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
  • C23C 26/00 - Coating not provided for in groups
  • H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
  • H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers

24.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMING METHOD

      
Application Number JP2025005257
Publication Number 2025/182650
Status In Force
Filing Date 2025-02-18
Publication Date 2025-09-04
Owner JSR CORPORATION (Japan)
Inventor
  • Esaki,fumiya
  • Shiratani,motohiro
  • Terada,nozomi
  • Shimizu,masahiro
  • Fukumi,aki

Abstract

The present invention provides: a radiation-sensitive composition which is excellent in terms of sensitivity, CDU, and process margin during the formation of a pattern; and a pattern forming method. This radiation-sensitive composition contains a solvent and a polymer which has an iodine group and contains a structural unit (I) that has an acid dissociable group. At least the radiation-sensitive composition contains a radiation-sensitive acid generator which includes a partial structure represented by formula (a), or the polymer contains a structural unit (II) that includes a partial structure represented by formula (a). (In formula (a), R1is a nitro group, a cyano group, a carboxy group, an iodine atom, an amino group, an alkyl group, an acyl group, or an alkoxycarbonyl group; in cases where there are a plurality of R1moieties, the plurality of R1moieties are the same as or different from each other; L1212122 ≤ 2m + 4 is satisfied; * is an atomic bond in the corresponding polymer or radiation-sensitive acid generator to another moiety; and Z+ is a monovalent onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 212/04 - Monomers containing only one unsaturated aliphatic radical containing one ring
  • C08F 220/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

25.

METHOD FOR MANUFACTURING GLASS SUBSTRATE EQUIPPED WITH THROUGH ELECTRODE, AND COPPER FILM FORMING COMPOSITION

      
Application Number JP2025004311
Publication Number 2025/177880
Status In Force
Filing Date 2025-02-10
Publication Date 2025-08-28
Owner JSR CORPORATION (Japan)
Inventor
  • Kimata,hironori
  • Yoneda,eiji

Abstract

Provided is a copper film forming composition and a method, for manufacturing a glass substrate equipped with a through electrode, where a seed layer also having properties of an adhesion layer can be formed on a glass wall surface in a through-hole of the glass substrate. The method for manufacturing a glass substrate equipped with a through electrode comprises: a seed layer forming step for bringing a copper film forming composition directly into contact with a glass wall surface in at least a through-hole of a glass substrate having the through-hole, and forming a seed layer on the glass wall surface in the through-hole; and a through electrode forming step for forming a through electrode in the through-hole in which the seed layer was formed. The copper film forming composition contains a copper compound, a nitrogen-containing organic compound, and a solvent.

IPC Classes  ?

  • H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
  • C23C 18/08 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by thermal decomposition characterised by the deposition of metallic material
  • H01L 23/15 - Ceramic or glass substrates
  • H05K 3/40 - Forming printed elements for providing electric connections to or between printed circuits

26.

CHROMATOGRAPHIC SUPPORT FOR PURIFYING FC FUSION PROTEIN AND FC FUSION PROTEIN PURIFICATION METHOD USING SAME

      
Application Number JP2024041646
Publication Number 2025/173342
Status In Force
Filing Date 2024-11-25
Publication Date 2025-08-21
Owner JSR CORPORATION (Japan)
Inventor
  • Suzuki, Kyouta
  • Ryu, Jung
  • Yao, Ying

Abstract

The present invention provides a chromatographic support for purifying an Fc fusion protein and an Fc fusion protein purification method using said chromatographic support. The chromatographic support comprises porous particles to which a ligand is immobilized, wherein: the porous particles are synthetic polymer-based or natural polymer-based porous particles; the ligand is at least one substance selected from the group consisting of protein A, protein G, protein L, and related substances of these; and the average pore diameter of the porous particles to which the ligand is immobilized is 75-120 nm. The Fc fusion protein purification method comprises: (step 1) a step for passing a solution containing an Fc fusion protein through a column that is provided with said chromatographic support and causing the Fc fusion protein to bind with the support; (step 2) a step for washing the support; and (step 3) a step for collecting the Fc fusion protein from the support.

IPC Classes  ?

  • C07K 1/16 - ExtractionSeparationPurification by chromatography
  • B01D 15/20 - Selective adsorption, e.g. chromatography characterised by constructional or operational features relating to the conditioning of the sorbent material
  • B01J 20/281 - Sorbents specially adapted for preparative, analytical or investigative chromatography
  • C07K 16/00 - Immunoglobulins, e.g. monoclonal or polyclonal antibodies
  • C07K 19/00 - Hybrid peptides

27.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATOR

      
Application Number JP2025002096
Publication Number 2025/173494
Status In Force
Filing Date 2025-01-23
Publication Date 2025-08-21
Owner JSR CORPORATION (Japan)
Inventor
  • Shiratani,motohiro
  • Taniguchi,takuhiro

Abstract

The purpose of the present invention is to provide: a radiation-sensitive composition having excellent sensitivity and LWR when forming a pattern; a pattern formation method; and a radiation-sensitive acid generator. This radiation-sensitive composition comprises: a polymer (A) which contains a structural unit (I) having an acid-dissociable group and has an iodine group; and a solvent (D), wherein said radiation-sensitive composition contains a radiation-sensitive acid generator (B) represented by formula (1), or the polymer (A) contains a structural unit (II) represented by formula (1'). (In formula (1), R1is a C1-C40 monovalent organic group. When a plurality of R2s are present, the plurality of R2s are each independently a hydrogen atom, a nitro group, a hydroxyl group, a cyano group, a carboxy group, a thiol group, a halogen atom, or a monovalent organic group, or a C3-C20 divalent cyclic group composed of two R2s aligned with each other and a carbon atom to which the two R2s are bonded. n is an integer of 0-20. W represents a ring structure with 5-8 membered rings which is formed together with a carbon atom and a nitrogen atom to which W is bonded.) (In formula (1'), R1ais a C1-C40 divalent organic group. Rais a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. R2, n, and W have the same meanings as those in formula (1).)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07D 207/404 - 2,5-Pyrrolidine-diones with only hydrogen atoms or radicals containing only hydrogen and carbon atoms directly attached to other ring carbon atoms, e.g. succinimide
  • C07D 209/48 - Iso-indolesHydrogenated iso-indoles with oxygen atoms in positions 1 and 3, e.g. phthalimide
  • C07D 209/80 - [b, c]- or [b, d]-condensed
  • C07D 317/70 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with ring systems containing two or more relevant rings
  • C07D 321/06 - 1, 3-DioxepinesHydrogenated 1,3-dioxepines
  • C08F 12/16 - Halogens
  • C08F 22/18 - Esters containing halogen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

28.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMING METHOD, AND ONIUM SALT

      
Application Number JP2025000491
Publication Number 2025/169659
Status In Force
Filing Date 2025-01-09
Publication Date 2025-08-14
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Abe,yudai
  • Egawa,fuyuki
  • Hikami,yuichi

Abstract

The present invention provides: a radiation-sensitive composition which has excellent storage stability and is capable of exhibiting sensitivity, LWR, pattern rectangularity, CDU, and pattern circularity at sufficient levels when a pattern is formed; a pattern forming method; and an onium salt. This radiation-sensitive composition contains: an onium salt that is represented by formula (1-1) or (1-2); a polymer that contains a structural unit (I) having an acid-dissociable group; and a solvent. [Chemical formula 1] (In formulae (1-1) and (1-2), Ar11and Ar2122 + 1)-valent aromatic ring having 5 to 20 ring atoms. Ar1233 + 1)-valent aromatic ring having 5 to 20 ring atoms. Ar22312311 is 1, R111 is 2 or more, the plurality of R1s are the same as the R111 is 1, or two among the plurality of R1s combine with each other to form a cyclic structure having 3 to 10 carbon atoms, together with two carbon atoms of the ring in the formula to which the moieties are bonded. The plurality of R122 is 1, R2is the same as the R1122 is 2 or more, the plurality of R2s are the same as the R1133 is 1, R3is the same as the R1133 is 2 or more, the plurality of R3s are the same as the R1122-, -O-, or -S-. Y is a single bond or a divalent linking group. The bonds expressed by the formula are each independently a single bond or a double bond. [Chemical formula 2] In the formula, Z- is an organic acid anion having 2 or more carbon atoms.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07D 321/10 - Seven-membered rings condensed with carbocyclic rings or ring systems
  • C07D 333/76 - Dibenzothiophenes
  • C07D 335/04 - Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
  • C07D 493/08 - Bridged systems
  • C07D 495/18 - Bridged systems
  • C08F 20/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

29.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM

      
Application Number JP2025002896
Publication Number 2025/169821
Status In Force
Filing Date 2025-01-30
Publication Date 2025-08-14
Owner JSR CORPORATION (Japan)
Inventor
  • Sakai,kazunori
  • Akita,shunpei
  • Ehara,kengo
  • Hayashi,yukihiro
  • Dobashi,masato
  • Ohtagaki,yasuhiro

Abstract

Provided are a semiconductor substrate production method and a composition for forming a resist underlayer film that make it possible to form a resist underlayer film capable of exhibiting excellent pattern rectangularity and pattern defect suppression when forming a resist pattern. The semiconductor substrate production method comprises: a step in which a substrate is directly or indirectly coated with the composition for forming a resist underlayer film; a step in which a resist film is formed on the resist underlayer film formed by the step in which coating is performed with the composition for forming a resist underlayer film; a step in which the resist film is exposed to radiation; and a step in which at least the exposed resist film is developed. The composition for forming a resist underlayer film contains a polymer and a solvent. The polymer includes a repeating unit (1) represented by formula (1). (In formula (1), R1represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1-20 carbon atoms. L1represents a single bond or a divalent linking group. R2 is a monovalent group containing an atom selected from the group consisting of silicon, zinc, aluminum, germanium, tin, titanium, zirconium, and hafnium.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08F 20/10 - Esters
  • C08F 30/04 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
  • C08F 220/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

30.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND METHOD FOR PRODUCING NITROGEN-CONTAINING COMPOUND

      
Application Number JP2025001581
Publication Number 2025/164408
Status In Force
Filing Date 2025-01-20
Publication Date 2025-08-07
Owner JSR CORPORATION (Japan)
Inventor
  • Tanaka,ryotaro
  • Oka,yuki
  • Hirasawa,kengo

Abstract

Provided are: a method for manufacturing a semiconductor substrate using a composition capable of forming a film excellent in embedding properties and flatness; a composition for forming a resist underlayer film; and a method for producing a nitrogen-containing compound. This method for manufacturing a semiconductor substrate includes: a step for directly or indirectly coating a substrate with a composition for forming a resist underlayer film; a step for forming a resist pattern directly or indirectly on the resist underlayer film formed by the coating step; and a step for performing etching using the resist pattern as a mask. The composition for forming a resist underlayer film contains a nitrogen-containing compound and a solvent. The nitrogen-containing compound includes a substructure represented by formula (1). (In formula (1), Ar1 is a substituted or unsubstituted aromatic ring having 5-40 rings and containing the carbon-carbon double bond in the formula. Each * is a bond with another structure in the nitrogen-containing compound.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/26 - Processing photosensitive materialsApparatus therefor

31.

METHOD FOR PRODUCING ALIPHATIC POLYESTER RESIN COMPOSITION, ALIPHATIC POLYESTER RESIN COMPOSITION, AND MARINE DEGRADATION PROMOTER

      
Application Number JP2025002431
Publication Number 2025/164572
Status In Force
Filing Date 2025-01-27
Publication Date 2025-08-07
Owner JSP CORPORATION (Japan)
Inventor Masumoto Hisashi

Abstract

Provided is a method for producing an aliphatic polyester resin composition by heating and kneading an aliphatic polyester resin and a nitrogen compound, wherein the solubility of the nitrogen compound in water at 20℃ is 50 g/100 mL or less. Also provided are: a method for producing an aliphatic polyester resin composition that makes it possible to obtain an aliphatic polyester resin composition having marine degradability and excellent durability to moisture; an aliphatic polyester resin composition; and a marine degradation accelerator.

IPC Classes  ?

  • C08K 5/20 - Carboxylic acid amides
  • C08K 3/32 - Phosphorus-containing compounds
  • C08K 5/16 - Nitrogen-containing compounds
  • C08K 5/32 - Compounds containing nitrogen bound to oxygen
  • C08K 5/521 - Esters of phosphoric acids, e.g. of H3PO4
  • C08K 5/523 - Esters of phosphoric acids, e.g. of H3PO4 with hydroxyaryl compounds
  • C08L 67/00 - Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chainCompositions of derivatives of such polymers
  • C08L 101/16 - Compositions of unspecified macromolecular compounds the macromolecular compounds being biodegradable

32.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number JP2025000115
Publication Number 2025/164208
Status In Force
Filing Date 2025-01-07
Publication Date 2025-08-07
Owner JSR CORPORATION (Japan)
Inventor
  • Taniguchi Takuhiro
  • Terada Nozomi
  • Nishikori Katsuaki
  • Shiratani Motohiro
  • Omiya Takuya

Abstract

A radiation-sensitive composition containing: a polymer that undergoes a change in solubility in a developing solution when subjected to the action of an acid; and a compound represented by formula (1).

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 63/08 - Salts thereof
  • C07C 65/10 - Salicylic acid
  • C07C 65/21 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups
  • C07C 381/12 - Sulfonium compounds
  • C07D 317/56 - Radicals substituted by sulfur atoms
  • C08F 8/12 - Hydrolysis
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

33.

DIFFRACTIVE OPTICAL ELEMENT AND METHOD FOR MANUFACTURING DIFFRACTIVE OPTICAL ELEMENT

      
Application Number JP2025000325
Publication Number 2025/164227
Status In Force
Filing Date 2025-01-08
Publication Date 2025-08-07
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
Inventor
  • Kishida,hiroyuki
  • Motoyama,kazuki
  • Rittaporn,itti
  • Konishi,kuniaki
  • Yamada,ryohei

Abstract

Provided are a diffractive optical element that is thin and highly amenable to mass production, and that has high light condensing performance and is applicable to fine pixel pitch, and a method for manufacturing the diffractive optical element. The diffractive optical element causes diffraction of incident light in a wavelength range of 410-1,100 nm, and comprises: a substrate that transmits incident light; and a light shielding resin layer that forms unevenness on the main surface of the substrate and forms a diffraction pattern that is substantially concentric when viewed in a direction orthogonal to the main surface of the substrate, the light shielding resin layer being formed by a curable resin composition and shielding at least some wavelengths of light in the incident light.

IPC Classes  ?

34.

RADICAL SCAVENGER ADDITIVES FOR METAL OXIDE BASED RESISTS AND PRECURSOR SOLUTIONS

      
Application Number US2025013963
Publication Number 2025/166117
Status In Force
Filing Date 2025-01-31
Publication Date 2025-08-07
Owner
  • INPRIA CORPORATION (USA)
  • JSR CORPORATION (Japan)
Inventor
  • Eberle, Fabian Felix
  • Jystad, Amy M.
  • Cardineau, Brian J.
  • Jiang, Kai
  • Maruyama, Ken
  • Hattori, Seitarou
  • Kasahara, Kazuki
  • Carver, Colin T.
  • Jilek, Robert E.
  • De Schepper, Peter

Abstract

An organometallic precursor solution comprising an organic solvent, a radiation sensitive organometallic precursor composition with hydrolysable metal ligands, and a radical scavenger additive is described. The radical scavenger additive or a blend of radical scavenger additives can provide for improvements to the stability of an organometallic precursor solution, such as improvements to storage stability, shelf-life, and/or batch-to-batch reproducibility through mitigation of the effects of reactive compounds in the environment, such as oxygen. A structure having a substrate, a radiation patternable organometallic coating composition, and a radical scavenging additive is also described. The radical scavenger additive or a blend thereof can result in patterning improvements, such as by improving coating quality and reducing patterning variability. Methods of using a radical scavenging additive in the formation of a structure comprising a radiation patternable organometallic film are described. Methods of producing a container of a stabilized organometallic precursor composition are also described.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 1/48 - Protective coatings
  • G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers

35.

WIRING BOARD, METHOD FOR PRODUCING WIRING BOARD, AND COMPOSITION FOR FORMING BARRIER FILM

      
Application Number JP2025002106
Publication Number 2025/159166
Status In Force
Filing Date 2025-01-23
Publication Date 2025-07-31
Owner
  • JSR CORPORATION (Japan)
  • NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)
Inventor
  • Mukawa Jun
  • Shimizu Shun
  • Takanashi Kazunori
  • Tabata Yuuki
  • Hamaguchi Hitoshi
  • Kose Osamu
  • Kameyama Takeru
  • Sasaki Takayoshi
  • Sakai Nobuyuki
  • Ebina Yasuo
  • Taniguchi Takaaki

Abstract

This wiring board comprises a barrier film disposed directly or indirectly on a substrate including copper wiring, and the barrier film contains flaky titanium oxide or a flaky titanium-metal composite oxide.

IPC Classes  ?

  • H05K 3/28 - Applying non-metallic protective coatings
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
  • H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials

36.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, POLYMER, AND COMPOUND

      
Application Number JP2024045699
Publication Number 2025/158854
Status In Force
Filing Date 2024-12-24
Publication Date 2025-07-31
Owner JSR CORPORATION (Japan)
Inventor
  • Abe,shinya
  • Omiya,takuya
  • Satou,yoshihiro
  • Nishikori,katsuaki

Abstract

The purpose of the present invention is to provide a radiation-sensitive composition and a pattern formation method that enable formation of a resist film that, when a next-generation technology is applied, can exhibit sufficient levels of sensitivity and CDU and suppress development defects. Another purpose of the present invention is to provide a polymer and a compound applicable to the radiation-sensitive composition. The present invention relates to a radiation-sensitive composition containing a solvent and a polymer containing a structural unit (I) having an acid-dissociable group and a structural unit (II) represented by formula (1). (In the formula (1), R1is a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. R2is a divalent organic group having 1 to 50 carbon atoms. Z is an amide bond. R3is a single bond or an organic group having 1 to 5 carbon atoms. Rf1and Rf2are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group, and at least one thereof is a fluorine atom or a fluorinated hydrocarbon group. When there are multiple Rf1s and multiple Rf2s, the multiple Rf1s and the multiple Rf2s are each the same or different. n is an integer of 1 to 3. M+ is a monovalent onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 25/18 - Polycyclic aromatic halogenated hydrocarbons
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 317/56 - Radicals substituted by sulfur atoms
  • C07D 493/08 - Bridged systems
  • C08F 220/12 - Esters of monohydric alcohols or phenols
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

37.

PHOTOSENSITIVE COMPOSITION, CURED PRODUCT AND METHOD FOR PRODUCING SAME, DISPLAY ELEMENT, AND IMAGING ELEMENT

      
Application Number JP2025002196
Publication Number 2025/159178
Status In Force
Filing Date 2025-01-24
Publication Date 2025-07-31
Owner JSR CORPORATION (Japan)
Inventor
  • Akiike,toshiyuki
  • Suzuki,hiroyuki
  • Yasuda,hiroyuki
  • Yoda,kyosuke

Abstract

The purpose of the present invention is to provide: a photosensitive composition which has a high refractive index, has little change in viscosity and resolution even after a certain period of time has elapsed, has excellent storage stability, does not solidify when a coating slit nozzle or the like is used, has good coating properties over time, and has high resolution; a cured film which is formed from the photosensitive composition, and a method for producing the cured film; a display element which is provided with the cured film; and an imaging element which is provided with the cured film. The present invention relates to a photosensitive composition for forming an optical member, the photosensitive composition containing: (A) particles which each have a reactive group, an acidic group that is different from the reactive group, and at least one group that is selected from the group consisting of an oxygen atom-containing or oxygen atom-free alkyl group having 2-30 carbon atoms and an oxygen atom-containing or oxygen atom-free alkylene group having 2-30 carbon atoms; (B) a radically polymerizable compound; and (C) a photoradical generator.

IPC Classes  ?

  • G02B 3/00 - Simple or compound lenses
  • C08F 292/00 - Macromolecular compounds obtained by polymerising monomers on to inorganic materials
  • G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking
  • H10K 50/858 - Arrangements for extracting light from the devices comprising refractive means, e.g. lenses

38.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number JP2024044195
Publication Number 2025/154446
Status In Force
Filing Date 2024-12-13
Publication Date 2025-07-24
Owner JSR CORPORATION (Japan)
Inventor
  • Hachiya,asuka
  • Nishikori,katsuaki
  • Omiya,takuya

Abstract

Provided are: a radiation-sensitive composition which exhibits excellent sensitivity and CDU when a pattern is formed, and which exhibits good storage stability; and a method for forming a pattern. This radiation-sensitive composition contains: a polymer containing a structural unit (I) having an acid-dissociable group; a radiation-sensitive acid generator which contains a second organic acid anion and a second onium cation that is free from the second organic acid anion and which, upon exposure to light, generates an acid that dissociates the acid-dissociable group; an acid diffusion control agent which contains a third organic acid anion and a third onium cation that is free from the third organic acid anion and which, upon exposure to light, generates an acid that does not dissociate the acid-dissociable group; and a solvent. The radiation-sensitive acid generator contains a compound represented by formula (1). The polymer includes, at least, a first organic acid anion and an iodonium cation that is free from the first organic acid anion and includes a structural unit (II) that includes an acid-generating structure which, upon exposure to light, generates an acid that dissociates the acid-dissociable group, or at least a part of the second onium cation or the third onium cation is an iodonium cation. [Chemical formula 1] In formula (1), W is a 5- to 20-membered aromatic ring having a valency of (p+q+1). In a case where multiple W moieties are present, the multiple W moieties may be the same as, or different from, each other. L is a linking group having a valency of (r+1). r is an integer between 1 and 3. p is an integer between 0 and 3. In a case where multiple p values occur, the multiple p values may be the same as, or different from, each other. q is an integer between 1 and 3. In a case where multiple q values occur, the multiple q values may be the same as, or different from, each other. M+ is a monovalent onium cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 25/00 - Compounds containing at least one halogen atom bound to a six-membered aromatic ring
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 317/24 - Radicals substituted by singly bound oxygen or sulfur atoms esterified
  • C07D 317/30 - Radicals substituted by carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
  • C07D 317/70 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with ring systems containing two or more relevant rings
  • C07D 333/28 - Halogen atoms
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

39.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER, AND COMPOUND

      
Application Number JP2024041546
Publication Number 2025/142242
Status In Force
Filing Date 2024-11-22
Publication Date 2025-07-03
Owner JSR CORPORATION (Japan)
Inventor
  • Omiya, Takuya
  • Nishikori, Katsuaki
  • Okumura, Takeshi
  • Tsuji, Takashi
  • Ishikawa, Hiroki

Abstract

A polymer containing a structural unit represented by formula (1) is included in this radiation-sensitive composition. In formula (1), R1is a hydrogen atom, a fluoro group, a methyl group, or a trifluoromethyl group. Ar1is a group obtained by removing (a+2) hydrogen atoms from an aromatic ring. R233 -or COO-. Provided that, R2is bonded to an atom adjacent to the bonding site with the main chain or is bonded to an atom also adjacent to an atom adjacent to the bonding site with the main chain among the atoms constituting the aromatic ring in Ar1. R3is a substituent. Mb+ is a b-valent cation.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 246/00 - Copolymers in which the nature of only the monomers in minority is defined
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

40.

RADIATION-SENSITIVE COMPOSITION, COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, PATTERN FORMING METHOD, AND COMPOUND

      
Application Number JP2024041401
Publication Number 2025/134675
Status In Force
Filing Date 2024-11-22
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Egawa,fuyuki
  • Furuichi,kota
  • Okazaki,satoshi
  • Uekusa,kouya
  • Nemoto,ryuichi

Abstract

Provided are: a radiation-sensitive composition capable of exhibiting sensitivity, CDU, LWR, water repellency, and development defect suppression at sufficient levels during pattern formation, while reducing fluorine in a surface modifier; a pattern forming method; and a compound. This radiation-sensitive composition comprises: a first polymer including a structural unit (I) having an acid dissociable group; a second polymer including a structural unit (i) derived from a compound represented by formula (F1); and a solvent. (In formula (F1): W is a polymerizable group; L is a single bond or an (n+1)-valent linking group; R1is a divalent hydrocarbon group having 1-10 carbon atoms; X1, X2, and X3are each independently a hydrogen atom or a fluorine atom, provided that at least one selected from the group consisting of X1, X2, and X3is a fluorine atom; n is an integer from 1 to 3, provided that when L is a single bond, n is 1; and when n is 2 or more, each of the multiple R1s, X1s, X2s, and X3s are the same or different from one another.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08L 33/10 - Homopolymers or copolymers of methacrylic acid esters
  • C08L 33/14 - Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

41.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATOR

      
Application Number JP2024044234
Publication Number 2025/134937
Status In Force
Filing Date 2024-12-13
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Abe,yudai
  • Furuichi,kota
  • Egawa,fuyuki
  • Inami,hajime
  • Nemoto,ryuichi

Abstract

The purpose of the present invention is to provide: a radiation-sensitive composition capable of forming a resist film that can exhibit sensitivity, LWR, DOF, EL, PED, CDU, and pattern circularity at sufficient levels; and a pattern formation method. The purpose of the present invention is also to provide a radiation-sensitive acid generator that can be applied to said radiation-sensitive composition. The radiation-sensitive composition comprises a polymer (A) containing a structural unit (I) having an acid-dissociable group, and a solvent (E), wherein at least the radiation-sensitive composition contains a radiation-sensitive acid generator (B) containing a partial structure represented by formula (a), or the polymer (A) contains a structural unit (VII) containing a partial structure represented by formula (a). (In formula (a): R1is a hydrogen atom, a nitro group, a hydroxy group, a cyano group, a carboxy group, a thiol group, or a monovalent fluorine-free organic group; when there are multiple R1s, the multiple R1s are the same or different from one another; R2and R3are each independently a hydrogen atom, a nitro group, a hydroxy group, a cyano group, a carboxy group, a thiol group, a halogen atom, or a monovalent organic group, or form a divalent alicyclic group which has 3 to 20 carbon atoms and which is formed from R2and R3combined with each other together with carbon atoms binding thereto; when there are multiple R2s and multiple R3s, the multiple R2s and the multiple R3s are the same or different from one another; L is *-C(=O)O-, *-C(=O)NR5-, or *-OC(=O)O-; R5is a hydrogen atom or a monovalent hydrocarbon group having 1-10 carbon atoms; * represents a bonding site on the R41side; R41is a divalent organic group having a cyclic structure and having a hetero atom; m is an integer of 1-5; n is an integer of 0-4; ** is a bonding site with the other moiety of the corresponding polymer (A) or radiation-sensitive acid generator (B); and M+ is a monovalent onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 25/18 - Polycyclic aromatic halogenated hydrocarbons
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 209/42 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
  • C07D 211/62 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals attached in position 4
  • C07D 295/15 - Heterocyclic compounds containing polymethylene-imine rings with at least five ring members, 3-azabicyclo [3.2.2] nonane, piperazine, morpholine or thiomorpholine rings, having only hydrogen atoms directly attached to the ring carbon atoms with substituted hydrocarbon radicals attached to ring nitrogen atoms substituted by carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals with the ring nitrogen atoms and the carbon atoms with three bonds to hetero atoms attached to the same carbon chain, which is not interrupted by carbocyclic rings to an acyclic saturated chain
  • C07D 305/06 - Heterocyclic compounds containing four-membered rings having one oxygen atom as the only ring hetero atoms not condensed with other rings having no double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to the ring atoms
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 317/08 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
  • C07D 321/10 - Seven-membered rings condensed with carbocyclic rings or ring systems
  • C07D 327/06 - Six-membered rings
  • C07D 327/08 - [b, e]-condensed with two six-membered carbocyclic rings
  • C07D 333/38 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
  • C07D 333/46 - Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
  • C07D 333/54 - Benzo [b] thiophenesHydrogenated benzo [b] thiophenes with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
  • C07D 333/76 - Dibenzothiophenes
  • C07D 335/02 - Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
  • C07D 407/12 - Heterocyclic compounds containing two or more hetero rings, at least one ring having oxygen atoms as the only ring hetero atoms, not provided for by group containing two hetero rings linked by a chain containing hetero atoms as chain links
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

42.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATION AGENT

      
Application Number JP2024044286
Publication Number 2025/134949
Status In Force
Filing Date 2024-12-13
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Abe,yudai
  • Furuichi,kota
  • Egawa,fuyuki
  • Inami,hajime
  • Nemoto,ryuichi

Abstract

The purpose of the present invention is to provide a radiation-sensitive composition whereby it is possible to form a resist film capable of exhibiting sensitivity, LWR, MEEF, CDU, development defect performance, pattern rectangularity, and pattern circularity at adequate levels, and a pattern formation method. Another purpose of the present invention is to provide a radiation-sensitive acid generation agent that can be applied to the radiation-sensitive composition. This radiation-sensitive composition contains: a polymer (A) including a structural unit (I) with an acid-dissociable group; a radiation-sensitive acid generation agent (B) represented by formula (1); and a solvent (E). Chemical Formula 1 (In formula (1), R1is a hydrogen atom, a nitro group, a hydroxyl group, a cyano group, a carboxy group, a methyl group, or an ethyl group. When there are a plurality of R1, the plurality of R1are each the same or different from each other. R2and R3are each independently a hydrogen atom, a nitro group, a hydroxyl group, a cyano group, a carboxy group, a thiol group, a halogen atom, a monovalent organic group, or a divalent alicyclic group that has 3 to 20 carbon atoms and is formed together with carbon atoms bonding together R2and R3when combined. When there are a plurality of R2and R3, the plurality of R2and R3are the same or different from each other. L is a divalent linking group. R4is a monovalent linear organic group having 3 or more carbon atoms or a monovalent branched organic group having 5 or more carbon atoms. m is an integer of 1 to 5. n is an integer of 0 to 4. M+ is a monovalent onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 327/06 - Six-membered rings
  • C07D 327/08 - [b, e]-condensed with two six-membered carbocyclic rings
  • C07D 333/46 - Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
  • C07D 333/54 - Benzo [b] thiophenesHydrogenated benzo [b] thiophenes with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
  • C07D 335/02 - Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

43.

RADIATION-SENSITIVE COMPOSITION, COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number JP2024041416
Publication Number 2025/134677
Status In Force
Filing Date 2024-11-22
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Egawa,fuyuki
  • Furuichi,kota
  • Okazaki,satoshi
  • Uekusa,kouya
  • Nemoto,ryuichi

Abstract

The present invention provides a radiation-sensitive composition that makes it possible to exhibit satisfactory levels of sensitivity, CDU, LWR, water repellency, and development defect suppression performance in pattern formation while achieving reduction in fluorine in a surface modifier, a pattern formation method, and a compound. This radiation-sensitive composition contains: a first polymer including a structural unit (I) having an acid-dissociable group; a second polymer including a structural unit (i) derived from a compound represented by formula (F1); and a solvent. (In formula (F1), W is a polymerizable group. L111+1)-valent linking group. When L122H is –COO-*22H side. Note that L111 is an integer from 1 to 3.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 20/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

44.

RADIATION-SENSITIVE COMPOSITION, COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number JP2024041417
Publication Number 2025/134678
Status In Force
Filing Date 2024-11-22
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Egawa,fuyuki
  • Furuichi,kota
  • Okazaki,satoshi
  • Uekusa,kouya
  • Nemoto,ryuichi

Abstract

Provided are a radiation-sensitive composition, a pattern formation method, and a compound, which are capable of exhibiting sufficient levels of development defect suppression, water repellency, LWR, CDU, and sensitivity when forming a pattern, while reducing fluorine in a surface modifier. This radiation-sensitive composition contains: a first polymer including a structural unit (I) having an acid dissociable group; a second polymer including a structural unit (i) derived from a compound represented by formula (F1); and a solvent. (In formula (F1), W represents a polymerizable group. n represents 0 or 1. When n represents 0, L represents a linking group having a valance of (m+1) and having one or more carbon atoms. When n represents 1, L represents a linking group having a valance of (m+1) and having three or more carbon atoms. m represents an integer of 1-3. When m represents 2, L represents a trivalent linking group having four or more carbon atoms.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 20/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

45.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMING METHOD AND ONIUM SALT COMPOUND

      
Application Number JP2024042424
Publication Number 2025/134736
Status In Force
Filing Date 2024-11-29
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Egawa,fuyuki
  • Abe,yudai
  • Oshiro,taku
  • Otsuka,noboru
  • Nemoto,ryuichi

Abstract

To provide a radiation-sensitive composition and a pattern forming method capable of exhibiting sensitivity, pattern rectangularity, pattern circularity, exposure margin, focal depth, development defect suppression property, LWR and CDU at sufficient levels when forming a resist pattern, and having good storage stability. A radiation-sensitive composition contains an onium salt compound represented by formula (1), a polymer, and a solvent. In formula (1), Rfis a halogen atom or a cyano group. n is an integer of 0 to 4. When n is 2 or more, multiple Rfgroups are the same or different from each other. R1is a monovalent organic group having 1 to 20 carbon atoms, a hydrogen atom, a halogen atom, a cyano group or a fluorinated alkyl group that binds to a carbon atom to which R1is bonded via *-COO-, *-OCO-, *22-, *-S-, *-CO-, *-O-CO-O-, *-CONR'- or *-NR'CO-. Each R' independently is a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. *is a bond with a carbon atom to which R1is bonded. Provided that, when n is 0, R1is a halogen atom or a cyano group. R2is a hydroxy group, a nitro group, an amino group, a carboxy group, or a monovalent organic group having 1 to 20 carbon atoms. m is an integer of 0 to 4. When m is 2 or more, multiple R222-. Provided that when X is a methylene group, the aromatic ring of Ar is directly bonded to S+in the formula, and R1does not include a polymerizable group. R41, R42, R43, R44, R45and R48are each independently a hydrogen atom, a hydroxy group, a halogen atom or a monovalent organic group having 1 to 20 carbon atoms. R46and R47are each independently a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms, or R46and R47 are combined to represent a ring structure having 3 to 10 ring members together with two carbon atoms to which they are bonded.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/39 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing halogen atoms bound to the carbon skeleton
  • C07C 309/42 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton having the sulfo groups bound to carbon atoms of non-condensed six-membered aromatic rings
  • C07C 309/48 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing nitrogen atoms, not being part of nitro or nitroso groups, bound to the carbon skeleton the carbon skeleton being further substituted by halogen atoms
  • C07C 309/58 - Carboxylic acid groups or esters thereof
  • C07C 317/14 - SulfonesSulfoxides having sulfone or sulfoxide groups bound to carbon atoms of six-membered aromatic rings
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 307/33 - Oxygen atoms in position 2, the oxygen atom being in its keto or unsubstituted enol form
  • C07D 317/18 - Radicals substituted by singly bound oxygen or sulfur atoms
  • C07D 327/06 - Six-membered rings
  • C07D 335/02 - Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
  • C07D 337/04 - Seven-membered rings not condensed with other rings
  • C07D 339/08 - Six-membered rings
  • C07D 409/04 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings directly linked by a ring-member-to-ring- member bond
  • C07D 409/06 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing only aliphatic carbon atoms
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

46.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATOR

      
Application Number JP2024044275
Publication Number 2025/134946
Status In Force
Filing Date 2024-12-13
Publication Date 2025-06-26
Owner JSR CORPORATION (Japan)
Inventor
  • Abe,yudai
  • Furuichi,kota
  • Egawa,fuyuki
  • Inami,hajime
  • Nemoto,ryuichi

Abstract

The purpose of the present invention is to provide: a radiation-sensitive composition with which it is possible to form a resist film capable of exhibiting sensitivity, LWR, pattern rectangularity, CDU, pattern circularity, and development defect performance at sufficient levels; and a pattern formation method. Additionally, the purpose of the present invention is to provide a radiation-sensitive acid generator that can be applied to the radiation-sensitive composition. This radiation-sensitive composition contains a polymer (A) that contains a structural unit (I) having an acid-dissociable group, a radiation-sensitive acid generator (B) that is represented by formula (1), and a solvent (E). Formula (1) (In formula (1), R1is a hydrogen atom, a nitro group, a hydroxyl group, a cyano group, a carboxy group, a thiol group, a halogen atom, or a monovalent organic group. When there are multiple R1, the R1are each the same or different. R2is a C1-40 monovalent organic group. m1 is an integer from 1 to 5. M+ is a monovalent onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/03 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 321/10 - Seven-membered rings condensed with carbocyclic rings or ring systems
  • C07D 327/06 - Six-membered rings
  • C07D 327/08 - [b, e]-condensed with two six-membered carbocyclic rings
  • C07D 333/46 - Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
  • C07D 333/76 - Dibenzothiophenes
  • C07D 335/02 - Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

47.

POLYOLEFIN-BASED RESIN FOAMED PARTICLES AND FOAMED PARTICLE MOLDED ARTICLE

      
Application Number JP2024044873
Publication Number 2025/135088
Status In Force
Filing Date 2024-12-18
Publication Date 2025-06-26
Owner
  • JSP CORPORATION (Japan)
  • JSP INTERNATIONAL SARL (France)
Inventor
  • Laurianne Vedie
  • Christophe Trouillet
  • Kopf Valentin
  • Hira Akinobu

Abstract

Provided are polyolefin-based resin foamed particles with which it is possible to easily mold a polyolefin-based resin foamed particle molded article exhibiting high flame retardancy as well as exceptional fusion properties and surface properties. These polyolefin-based resin foamed particles comprise a foam layer. The foam layer contains a base material resin, a phosphonic-acid-ester-based compound, and a NOR-type hindered-amine-based compound. The base material resin is configured from a polyolefin-based resin. The blending amount of the phosphonic-acid-ester-based compound in the foam layer is 5-25 parts by mass per 100 parts by mass of the base material resin. The blending amount of the NOR-type hindered-amine-based compound in the foam layer is 0.3-5 parts by mass per 100 parts by mass of the base material resin. The closed cell ratio of the foamed particles is 60% or greater.

IPC Classes  ?

48.

PRODUCTION METHOD FOR CHROMATOGRAPHIC CARRIER

      
Application Number JP2024032744
Publication Number 2025/126602
Status In Force
Filing Date 2024-09-12
Publication Date 2025-06-19
Owner JSR CORPORATION (Japan)
Inventor
  • Miyajima, Ken
  • Akiyama, Minato
  • Matsumoto, Kentarou
  • Kobayashi, Kunihiko

Abstract

The present invention provides a method for easily producing a chromatographic carrier that has a high dynamic binding capacity to antibodies or fragments thereof, inhibits the leakage of protein ligands during isolation, and inhibits the aggregation of carriers. Provided is a production method for a chromatographic carrier comprising the ligand binding step, ligand-bound carrier bed forming step, ligand-bound carrier flushing and cleaning step, and ligand-bound carrier stirring and cleaning step described hereafter. Ligand binding step: a step in which a protein ligand is bound to a solid phase carrier. Ligand-bound carrier bed forming step: a step in which a container is filled with the ligand-bound carrier obtained in the ligand binding step to form a ligand-bound carrier bed. Ligand-bound carrier flushing and cleaning step: a step in which the ligand-bound carrier bed formed in the ligand-bound carrier bed forming step is cleaned one or more times by flushing the bed with a cleaning liquid. Ligand-bound carrier stirring and cleaning step: a step in which the ligand-bound carrier after the ligand-bound carrier flushing and cleaning step is cleaned one or more times by stirring in a cleaning liquid.

IPC Classes  ?

  • B01J 20/281 - Sorbents specially adapted for preparative, analytical or investigative chromatography
  • C07K 1/22 - Affinity chromatography or related techniques based upon selective absorption processes
  • G01N 30/50 - Conditioning of the sorbent material or stationary liquid

49.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024040000
Publication Number 2025/126742
Status In Force
Filing Date 2024-11-11
Publication Date 2025-06-19
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori,katsuaki
  • Omiya,takuya
  • Ito,ryo

Abstract

Provided are a radiation-sensitive composition capable of exhibiting sufficient levels of sensitivity, CDU performance, and development defect suppression property during pattern formation while achieving a reduction of fluorine in a surface modifier, and a pattern formation method. The radiation-sensitive composition comprises: a first polymer having a structural unit containing an acid-dissociable group; a second polymer different from the first polymer; at least one selected from the group consisting of a radiation-sensitive acid generator containing an iodine group, and an acid diffusion control agent containing an iodine group; and a solvent. The content ratio of the second polymer to the total mass of the first polymer and the second polymer is 0.1-20 mass% inclusive. The second polymer includes a partial structure represented by formula (i), and has a structural unit (B1) not containing a fluorine atom. (In formula (i), R1, R2, and R3 are each independently an alkyl group having 1 to 10 carbon atoms, and * is a bond to a structure other than the partial structure in the structural unit (B1).)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 12/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 20/10 - Esters
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

50.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATOR

      
Application Number JP2024040123
Publication Number 2025/126748
Status In Force
Filing Date 2024-11-12
Publication Date 2025-06-19
Owner JSR CORPORATION (Japan)
Inventor
  • Okude,ryo
  • Nishikori,katsuaki
  • Nemoto,ryuichi

Abstract

The purpose of the present invention is to provide: a radiation-sensitive composition capable of forming a resist film that can exhibit sensitivity and CDU at satisfactory levels when next-generation technology is applied and can suppress development defects; and a pattern formation method. The purpose of the present invention is also to provide a radiation-sensitive acid generator that can be applied to said radiation-sensitive composition. The present invention relates to a radiation-sensitive composition containing: a polymer (A) containing a structural unit (I) having an acid-dissociable group; a radiation-sensitive acid generator (B) represented by formula (1); and a solvent (C). (In formula (1): A is an (n1+n2+n3+1)-valent aromatic ring; R1is a nitro group, a cyano group, a hydroxy group, an amino group, or a monovalent organic group; when there are multiple R1s, the multiple R1s are the same or different from one another; n1 is an integer of 1-5; n2 is an integer of 1-5; n3 is an integer of 0-5; m2 is an integer of 1-3; L is a single bond or an (m2+1)-valent linking group; Rf1and Rf2are each independently a fluorine atom or a monovalent fluorinated hydrocarbon group having 1-20 carbon atoms; Rf3and Rf4are each independently a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1-20 carbon atoms, or a monovalent fluorinated hydrocarbon group having 1-20 carbon atoms; when there are multiple Rf3s and multiple Rf4s, the multiple Rf3s and the multiple Rf4s may each be the same or different from one another; m1 is an integer of 0-10; and M+ is a monovalent onium cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/11 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton with the oxygen atom of at least one of the etherified hydroxy groups further bound to a carbon atom of a six-membered aromatic ring
  • C07C 381/12 - Sulfonium compounds
  • C07D 317/70 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 ortho- or peri-condensed with carbocyclic rings or ring systems condensed with ring systems containing two or more relevant rings
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

51.

PRODUCTION METHOD FOR CHROMATOGRAPHIC CARRIER

      
Application Number JP2024032743
Publication Number 2025/126601
Status In Force
Filing Date 2024-09-12
Publication Date 2025-06-19
Owner JSR CORPORATION (Japan)
Inventor
  • Miyajima, Ken
  • Akiyama, Minato
  • Matsumoto, Kentarou
  • Kobayashi, Kunihiko

Abstract

The present invention provides a method for easily producing a chromatographic carrier that has a high dynamic binding capacity to antibodies or fragments thereof, inhibits the leakage of protein ligands during isolation, and inhibits the aggregation of carriers. Provided is a production method for a chromatographic carrier comprising the solid phase carrier cleaning step, ligand binding step, and ligand-bound carrier cleaning step described hereafter. Solid phase carrier cleaning step: a step in which a solid phase carrier is cleaned using at least one cleaning liquid selected from cleaning liquids containing hydrogen peroxide, cleaning liquids containing peracetic acid, and cleaning liquids (other than cleaning liquids containing hydrogen peroxide and cleaning liquids containing peracetic acid) having a pH of 0-3 or a pH of higher than 12.5 to 14, and the surface of the solid phase carrier is made hydrophilic. Ligand binding step: a step in which a protein ligand is bound to the solid phase carrier cleaned in the solid phase carrier cleaning step. Ligand-bound carrier cleaning step: a step in which the carrier obtained in the ligand binding step is cleaned.

IPC Classes  ?

  • B01J 20/281 - Sorbents specially adapted for preparative, analytical or investigative chromatography
  • C07K 1/22 - Affinity chromatography or related techniques based upon selective absorption processes
  • G01N 30/50 - Conditioning of the sorbent material or stationary liquid

52.

ANTIFERROMAGNETIC MATERIAL WITH LARGE ANOMALOUS HALL EFFECT

      
Application Number JP2024044191
Publication Number 2025/127136
Status In Force
Filing Date 2024-12-13
Publication Date 2025-06-19
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
  • TOHOKU UNIVERSITY (Japan)
Inventor
  • Toga,yuuta
  • Inukai,kouji
  • Kubo,koutarou
  • Nakatsuji,satoru
  • Minami,susumu
  • Koretsune,takashi

Abstract

31-xx331-yyy (0

IPC Classes  ?

  • H10N 52/00 - Hall-effect devices
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/10 - Magnetoresistive devices

53.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024039222
Publication Number 2025/121051
Status In Force
Filing Date 2024-11-05
Publication Date 2025-06-12
Owner JSR CORPORATION (Japan)
Inventor
  • Hachiya,asuka
  • Nishikori,katsuaki
  • Omiya,takuya

Abstract

Provided are a radiation-sensitive composition which has excellent sensitivity and CDU and good storage stability, and a pattern formation method. This radiation-sensitive composition comprises a polymer which contains a structural unit (I) that has an acid-dissociable group, an acid diffusion control agent which includes a third organic acid anion and a third onium cation and which, when exposed to light, generates an acid that does not dissociate the acid-dissociable group, and a solvent, wherein at least: the polymer includes a structural unit (II) which has a first organic acid anion and an iodonium cation and which includes an acid generation structure that, when exposed to light, generates an acid that dissociates the acid-dissociable group; the radiation-sensitive composition contains a radiation-sensitive acid generation agent which contains a second organic acid anion and an iodonium cation and which, when exposed to light, generates an acid that dissociates the acid-dissociable group; or the third onium cation is an iodonium cation, the third organic acid anion of the acid diffusion control agent includes an aromatic ring, -COO-is bound to one of the ring-forming atoms of the aromatic ring, -OH is bound to each of two ring-forming atoms which are adjacent to the one ring-forming atom, and the solvent includes a compound represented by formula (H). (In formula (H), R1to R3 are each independently a substituted or unsubstituted C1-20 monovalent aliphatic hydrocarbon group.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

54.

RESIN COMPOSITION, CURED OBJECT, AND ELECTRONIC COMPONENT

      
Application Number JP2024040247
Publication Number 2025/115606
Status In Force
Filing Date 2024-11-13
Publication Date 2025-06-05
Owner JSR CORPORATION (Japan)
Inventor
  • Iizuka Shunsuke
  • Satonaka Eri

Abstract

One embodiment of the present invention pertains to a resin composition, a cured object, or an electronic component. The resin composition contains: a polymer (A) having a structural unit represented by formula (a1-1); and a hydrogenated styrene-based thermoplastic elastomer (B). In formula (a1-1), Ra1represents a divalent group represented by formula (a2), and Ra2represents a substituted or unsubstituted divalent aromatic heterocyclic group. In formula (a2), Ara1and Ara2each independently represent a substituted or unsubstituted aromatic hydrocarbon group, L represents a single bond, -O-, -S-, -N(R822-, -P(O)-, or a divalent organic group, y represents an integer of 0-5, and Ra6and Ra7 each independently represent a single bond, a methylene group, or an alkylene group having 2-4 carbon atoms.

IPC Classes  ?

  • C08L 71/10 - Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
  • C08G 65/40 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols and other compounds
  • C08L 15/00 - Compositions of rubber derivatives

55.

POLYOLEFIN-BASED RESIN FOAM PARTICLE, FOAM PARTICLE MOLDED BODY OBTAINED BY IN-MOLD MOLDING OF SAID FOAM PARTICLE, METHOD FOR PRODUCING SAID FOAM PARTICLE, AND METHOD FOR ASSESSING FLAME RETARDANCY OF SAID FOAM PARTICLE

      
Application Number JP2024041680
Publication Number 2025/115815
Status In Force
Filing Date 2024-11-25
Publication Date 2025-06-05
Owner
  • JSP INTERNATIONAL SARL (France)
  • JSP CORPORATION (Japan)
Inventor
  • Vedie Laurianne
  • Kopf Valentin
  • Hira Akinobu
  • Dilger Melvin
  • Jimenez Maude
  • Bellayer Severine
  • Duquesne Sophie

Abstract

215235215tot215235 to t to t is a numerical value that indicates the mass percentage of phosphorus in the foam particle, and falls within the range 0.001-0.06.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent

56.

COMPLEX FOR TUMOR CHEMODYNAMIC THERAPY

      
Application Number JP2024039549
Publication Number 2025/100466
Status In Force
Filing Date 2024-11-07
Publication Date 2025-05-15
Owner
  • NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM (Japan)
  • JSR CORPORATION (Japan)
Inventor
  • Sato, Kazuhide
  • Shimada, Mibuko

Abstract

This complex for use in tumor chemodynamic therapy comprises: nanoparticles that enclose iron oxide and include a hydrophilic polymer in a surface layer thereof; and target recognition molecules that bind to the nanoparticles and can bind to target molecules of the tumor cells.

IPC Classes  ?

  • A61K 33/26 - IronCompounds thereof
  • A61K 33/40 - Peroxides
  • A61K 39/395 - AntibodiesImmunoglobulinsImmune serum, e.g. antilymphocytic serum
  • A61K 47/36 - PolysaccharidesDerivatives thereof, e.g. gums, starch, alginate, dextrin, hyaluronic acid, chitosan, inulin, agar or pectin
  • A61K 47/68 - Medicinal preparations characterised by the non-active ingredients used, e.g. carriers or inert additivesTargeting or modifying agents chemically bound to the active ingredient the non-active ingredient being chemically bound to the active ingredient, e.g. polymer-drug conjugates the non-active ingredient being a modifying agent the modifying agent being an antibody, an immunoglobulin or a fragment thereof, e.g. an Fc-fragment
  • A61K 49/00 - Preparations for testing in vivo
  • A61K 49/16 - AntibodiesImmunoglobulinsFragments thereof
  • A61K 49/18 - Nuclear magnetic resonance [NMR] contrast preparationsMagnetic resonance imaging [MRI] contrast preparations characterised by a special physical form, e.g. emulsions, microcapsules, liposomes
  • A61P 35/00 - Antineoplastic agents

57.

COMPOSITION, FOOD/BEVERAGE ITEM, AND METHOD FOR ASSISTING EXAMINATION AND DIAGNOSIS OF DISEASE CAUSED BY PATHOGENIC BACTERIUM OR PATHOGENIC FUNGUS

      
Application Number JP2024039600
Publication Number 2025/100480
Status In Force
Filing Date 2024-11-07
Publication Date 2025-05-15
Owner
  • KEIO UNIVERSITY (Japan)
  • JSR CORPORATION (Japan)
Inventor
  • Honda Kenya
  • Nishiyama Keita
  • Wang Zhujun
  • Ye Ning
  • Atarashi Koji
  • Nagashima Keika
  • Aoto Yoshimasa

Abstract

The present invention provides: a composition and a food/beverage item which can promote the elongation of pili of an intestinal bacterium and exhibits an anti-bacterial activity; and a method for assisting the examination and diagnosis of a disease caused by a pathogenic bacterium or a pathogenic fungus. The present invention provides a composition containing a bacterium capable of producing 3-phenylpropionic acid (PPA) or 3-(4-hydroxyphenyl)propionic acid (4OHPPA). The present invention also provides a food/beverage item containing PPA or 4OHPPA. The present invention further provides a method for assisting the examination and diagnosis of a disease caused by a pathogenic bacterium or a pathogenic fungus. The method comprises: quantifying the amount of PPA or the amount of 4OHPPA in feces from a subject by using 2-nitrophenylhydrazine; and comparing a value obtained by the quantification of the amount of PPA or the amount of 4OHPPA with a reference value. When the value obtained by the quantification of the amount of PPA or the amount of 4OHPPA is smaller than the reference value, it is determined that the subject is possibly affected by the disease.

IPC Classes  ?

  • A61K 35/74 - Bacteria
  • A23L 33/135 - Bacteria or derivatives thereof, e.g. probiotics
  • A61K 35/741 - Probiotics
  • A61K 35/742 - Spore-forming bacteria, e.g. Bacillus coagulans, Bacillus subtilis, clostridium or Lactobacillus sporogenes
  • A61K 35/744 - Lactic acid bacteria, e.g. enterococci, pediococci, lactococci, streptococci or leuconostocs
  • A61K 35/745 - Bifidobacteria
  • A61K 35/747 - Lactobacilli, e.g. L. acidophilus or L. brevis
  • A61P 1/00 - Drugs for disorders of the alimentary tract or the digestive system
  • A61P 1/02 - Stomatological preparations, e.g. drugs for caries, aphtae, periodontitis
  • A61P 7/00 - Drugs for disorders of the blood or the extracellular fluid
  • A61P 11/00 - Drugs for disorders of the respiratory system
  • A61P 13/02 - Drugs for disorders of the urinary system of urine or of the urinary tract, e.g. urine acidifiers
  • A61P 15/02 - Drugs for genital or sexual disordersContraceptives for disorders of the vagina
  • A61P 31/04 - Antibacterial agents
  • A61P 31/10 - Antimycotics
  • A61P 43/00 - Drugs for specific purposes, not provided for in groups
  • C12N 1/20 - BacteriaCulture media therefor
  • C12N 9/02 - Oxidoreductases (1.), e.g. luciferase
  • C12N 9/88 - Lyases (4.)
  • C12Q 1/68 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions involving nucleic acids
  • G01N 33/50 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing

58.

INFORMATION PROCESSING SYSTEM, PROGRAM, AND INFORMATION PROCESSING METHOD

      
Application Number JP2024038737
Publication Number 2025/095008
Status In Force
Filing Date 2024-10-30
Publication Date 2025-05-08
Owner
  • JSR CORPORATION (Japan)
  • NATIONAL CEREBRAL AND CARDIOVASCULAR CENTER (Japan)
Inventor
  • Takahashi, Shouadnas
  • Sawada, Katsutoshi
  • Fujioka, Masayasu
  • Kobayashi, Nobutoshi
  • Nakaoka, Yoshikazu
  • Asano, Ryotaro
  • Moriuchi, Kenji

Abstract

An information processing system (1) according to an embodiment comprises a determination unit (102) that inputs pulse information relating to the heartbeat of a subject and attribute information pertaining to the subject to a trained model and thereby generates a determination result indicating the presence/absence and the degree of heart disease in the subject. The trained model is trained using, for a plurality of providers who provide training data, pulse information relating to the heartbeat of the provider, attribute information pertaining to the provider, and diagnosis information indicating the state of cardiac function of the provider.

IPC Classes  ?

  • A61B 5/346 - Analysis of electrocardiograms
  • A61B 5/352 - Detecting R peaks, e.g. for synchronising diagnostic apparatusEstimating R-R interval
  • G16H 50/20 - ICT specially adapted for medical diagnosis, medical simulation or medical data miningICT specially adapted for detecting, monitoring or modelling epidemics or pandemics for computer-aided diagnosis, e.g. based on medical expert systems
  • G06N 20/00 - Machine learning

59.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, POLYMER, AND COMPOUND

      
Application Number JP2024034915
Publication Number 2025/084117
Status In Force
Filing Date 2024-09-30
Publication Date 2025-04-24
Owner JSR CORPORATION (Japan)
Inventor
  • Watanabe,daichi
  • Itagaki,masafumi
  • Nonoyama,yoshiki
  • Chosa,tomoya

Abstract

The purpose of the present invention is to provide: a radiation sensitive composition which exhibits sensitivity and CDU at satisfactory levels when next generation techniques are used and which can form a resist film in which developing defects are suppressed; and a pattern formation method. Another purpose of the present invention is to provide a polymer and a compound able to be used in the radiation-sensitive composition. The present invention relates to a radiation-sensitive composition which contains: a polymer (A) including a structural unit (I) represented by general formula (1); and a solvent (B). The polymer (A) includes a radiation-sensitive acid-generating structural unit (IV): and/or a radiation-sensitive acid generator (C) is contained in a component other than the polymer (A). An iodo group is contained in at least one component selected from the group consisting of the polymer (A) and the radiation-sensitive acid generator (C). In formula (1), R1is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. L1is a single bond or a divalent linking group. Ar denotes a furan ring, a thiophene ring, or a 9- to 20-membered aromatic heterocyclic ring having a furan ring or a thiophene ring. R2is a hydrogen atom or a monovalent organic group having 1-20 carbon atoms. R3is a halogen atom, a hydroxyl group, a cyano group, a nitro group, an amino group, a thiol group or a monovalent organic group having 1-20 carbon atoms. n is an integer between 0 and 4. If the value of n is 2 or more, multiple R3 moieties may be the same as, or different from, each other.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07D 307/68 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen
  • C07D 307/85 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
  • C07D 333/38 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
  • C07D 333/70 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
  • C07D 407/12 - Heterocyclic compounds containing two or more hetero rings, at least one ring having oxygen atoms as the only ring hetero atoms, not provided for by group containing two hetero rings linked by a chain containing hetero atoms as chain links
  • C07D 409/12 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a chain containing hetero atoms as chain links
  • C08F 8/12 - Hydrolysis
  • C08F 24/00 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
  • C08F 28/00 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

60.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number JP2024035444
Publication Number 2025/079496
Status In Force
Filing Date 2024-10-03
Publication Date 2025-04-17
Owner JSR CORPORATION (Japan)
Inventor
  • Serizawa,ryuichi
  • Kimata,hironori
  • Ozaki,yuki

Abstract

Provided is a method for manufacturing a semiconductor substrate that has excellent embedding properties, in which a composition for forming a metal-containing film is embedded in a substrate pattern. The method for manufacturing the semiconductor substrate comprises: a step for coating a substrate with a film-forming composition; and a step for performing, on the coating film formed in the film-forming composition coating step, at least one process selected from the group consisting of exposure to radiation and exposure to plasma. The film-forming composition contains a metal compound composed of at least a metal atom and an organic acid, and a solvent.

IPC Classes  ?

61.

RESIST UNDERLAYER FILM-FORMING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number JP2024033501
Publication Number 2025/079408
Status In Force
Filing Date 2024-09-19
Publication Date 2025-04-17
Owner JSR CORPORATION (Japan)
Inventor
  • Dobashi,masato
  • Dei,satoshi
  • Ehara,kengo
  • Akita,shunpei
  • Hayashi,yuya
  • Hayashi,yukihiro
  • Kasai,tatsuya
  • Kawazu,tomoharu
  • Takada,kazuya

Abstract

Provided are a resist underlayer film-forming composition with which it is possible to form a resist underlayer film having excellent solvent resistance and excellent resist pattern rectangularity, and a method for manufacturing a semiconductor substrate. The resist underlayer film-forming composition contains a polymer having a repeating unit represented by formula (1), and a solvent. (In formula (1), R1represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms. L1represents a 1+n-valent linking group. Ar1represents a monovalent group having an aromatic ring having 6 to 20 ring members. The aromatic ring has at least one halogen atom. n represents an integer of 1 to 3. When n is 2 or more, a plurality of the Ar1s are the same as or different from one another. L1has at least one group (A) selected from the group consisting of a group represented by formula (2-1), a group represented by formula (2-2), a group represented by formula (2-3), a group represented by formula (2-4), a group represented by formula (2-5), a group represented by formula (2-6), a group represented by formula (2-7), and a group represented by formula (2-8).) (In formulae (2-1) to (2-8), R7each independently represent a divalent organic group having 1 to 20 carbon atoms or a single bond. R8, R9, R10, and R13each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. Cy represents a ring structure constituted together with two carbon atoms in formula (2-2) and having 3 to 20 ring members. R11represents a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or a single bond. R12represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. ** represents a bond with an atom constituting Cy. Note that if R11is a single bond, R11is combined with **. * represents a bond with an atom constituting L1.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08F 12/32 - Monomers containing only one unsaturated aliphatic radical containing two or more rings
  • G03F 7/20 - ExposureApparatus therefor

62.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number JP2024035269
Publication Number 2025/079475
Status In Force
Filing Date 2024-10-02
Publication Date 2025-04-17
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Abe,yudai
  • Oshiro,taku

Abstract

Provided are a radiation-sensitive composition and a pattern formation method that can exhibit, at the time of pattern formation, a sufficient level of sensitivity, LWR performance, pattern rectangularity, development defect suppression, CDU performance, and pattern circularity. This radiation-sensitive composition includes: a polymer that includes a structural unit (I) represented by formula (1); an onium salt that includes an organic acid anion including a cyclic structure, and an onium cation; and a solvent. (In formula (1), R1is a hydrogen atom or a C1-20 monovalent organic group, L is a single bond or a divalent linking group, R2is a C1-5 substituted or unsubstituted monovalent hydrocarbon group, R3is a C1-10 monovalent organic group, a hydroxy group, a nitro group, a cyano group, an amino group, a halogen atom, or a sulfanyl group, in cases in which there are a plurality of R3s present, the plurality of R3s may be the same as or different from each other, and n is an integer from 0 to 10.)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 20/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • C08L 33/14 - Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/20 - ExposureApparatus therefor

63.

THERMOPLASTIC POLYMER FOAMED PARTICLE, THERMOPLASTIC POLYMER FOAMED PARTICLE MOLDED BODY, AND IDENTIFICATION METHOD FOR THERMOPLASTIC POLYMER FOAMED PARTICLE OR THERMOPLASTIC POLYMER FOAMED PARTICLE MOLDED BODY

      
Application Number JP2024030554
Publication Number 2025/069866
Status In Force
Filing Date 2024-08-27
Publication Date 2025-04-03
Owner
  • JSP CORPORATION (Japan)
  • JSP INTERNATIONAL SARL (France)
Inventor
  • Antonio Pereira
  • Valentin Kopf
  • Hira Akinobu

Abstract

Provided are: thermoplastic polymer foamed particles in which it is possible to identify the foamed particles themselves; and a thermoplastic polymer foamed particle molded body that, by being formed from the identifiable thermoplastic polymer foamed particles, can be identified without ruining the aesthetics thereof. Further provided is an identification method for the thermoplastic polymer foamed particles and/or the thermoplastic polymer foamed particle molded body. Thermoplastic polymer foamed particles (100) exhibit a light emission reaction derived from a light-emitting rare-earth element (10) through irradiation with electromagnetic waves. This thermoplastic polymer foamed particle molded body is formed through in-mold molding using the thermoplastic polymer foamed particles (100) and thereby exhibits a light emission reaction. This identification method for the thermoplastic polymer foamed particles or the thermoplastic polymer foamed particle molded body comprises: i) an electromagnetic wave irradiation step for irradiating the surfaces of the thermoplastic polymer foamed particles or the thermoplastic polymer foamed particle molded body with electromagnetic waves; and ii) a detection step for detecting, by using a detection device, a light emission reaction that is derived from a light-emitting rare-earth element and that occurs through the irradiating with the electromagnetic waves to obtain a light emission spectrum. A first method of the identification method further comprises iii-1) an identification step for observing the contrast between the light emission spectrum and a blank spectrum in which the light emission reaction derived from the light-emitting rare-earth element is not exhibited. A second method of the identification method further comprises iii-2) an identification step for comparing the light emission spectrum with a preset standard light emission spectrum in which the light emission reaction derived from the light-emitting rare-earth element is exhibited.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent
  • B29C 44/00 - Shaping by internal pressure generated in the material, e.g. swelling or foaming
  • B29C 44/44 - Feeding the material to be shaped into a closed space, i.e. to make articles of definite length in the form of expandable particles or beads

64.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND

      
Application Number JP2024032863
Publication Number 2025/070119
Status In Force
Filing Date 2024-09-13
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Okazaki,satoshi
  • Inami,hajime
  • Abe,yudai

Abstract

The present invention provides a radiation-sensitive composition with which it is possible to from a resist film capable of exhibiting sensitivity, LWR performance, pattern rectangularity, CDU, pattern circularity, MEEF, and DOF at sufficient levels, and a pattern formation method. The radiation-sensitive composition contains: a first onium salt compound represented by formula (1); at least one type of second onium salt compound selected from the group consisting of a carboxylate compound represented by formula (2) and a carboxylic acid intramolecular salt compound represented by formula (3); a polymer including a structure unit having an acid dissociable group; and a solvent. (In formula (1), A is a (1+n)-valent organic group having 1 to 40 carbon atoms. Rf1and Rf2are each independently a hydrogen atom, a monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. If a plurality of Rf1s and a plurality of Rf2s are present, the plurality of Rf1s and the plurality of Rf211 +is a radiation-sensitive onium cation.) (In formula (2), R122 +is an organic cation.) (In formula (3), R233 + is a monovalent organic onium cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 20/26 - Esters containing oxygen in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

65.

RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number JP2024028429
Publication Number 2025/069728
Status In Force
Filing Date 2024-08-08
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor Maruyama Ken

Abstract

This radiation-sensitive composition contains: a polymer whose solubility with respect to a developer changes due to the action of an acid; and a compound having an anion and a radiation-sensitive onium cation, wherein the polymer has a structural unit including a group that generates sulfonic acid due to the action of radiation, the polymer includes an iodine group, and at least one of the anion and the radiation-sensitive onium cation includes an acid-dissociable group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 22/24 - Esters containing sulfur
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

66.

RESIN COMPOSITION, CURED ARTICLE, PREPREG, COPPER-CLAD LAMINATE BOARD, INTERLAYER INSULATION FILM, AND COMPOUND

      
Application Number JP2024031110
Publication Number 2025/069916
Status In Force
Filing Date 2024-08-30
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Kawashima Naoyuki
  • Kadota Toshiaki
  • Doi Takashi
  • Satonaka Eri
  • Higuchi Tetsuya

Abstract

Provided are: a resin composition comprising a compound (A) that comprises at least one compound selected from the group consisting of a compound (A1) having two or more partial structures represented by formula (1) and a compound (A2) represented by formula (2) and a polymer (B) having a group crosslinkable with the compound (A) and an aromatic ring; a cured article; a prepreg; a copper-clad laminate board; an interlayer insulation film; and a compound. The explanation for each substituent in the formulae is as described in the description.

IPC Classes  ?

  • C08L 101/02 - Compositions of unspecified macromolecular compounds characterised by the presence of specified groups
  • C08F 290/06 - Polymers provided for in subclass
  • C08F 290/14 - Polymers provided for in subclass
  • C08G 65/40 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols and other compounds
  • C08J 5/04 - Reinforcing macromolecular compounds with loose or coherent fibrous material
  • C08L 15/00 - Compositions of rubber derivatives
  • C08L 71/10 - Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
  • H05K 1/03 - Use of materials for the substrate

67.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND ONIUM SALT COMPOUND

      
Application Number JP2024032894
Publication Number 2025/070124
Status In Force
Filing Date 2024-09-13
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Okazaki,satoshi
  • Inami,hajime
  • Oshiro,taku

Abstract

Provided are a radiation-sensitive composition, a pattern formation method, and an onium salt compound that make it possible to achieve sufficient sensitivity, CDU performance, pattern circularity, development defect suppression, depth of focus, LWR performance, pattern rectangularity, and exposure latitude when a pattern is formed. A radiation-sensitive composition according to the present invention includes: an onium salt compound represented by formula (1); a polymer that includes a structural unit (I) represented by formula (2); and a solvent. (In formula (1), A is a C3–40 (1+n)-valent organic group that includes a cyclic structure. When A includes a straight-chain alkanediyl group, the number of carbons in the straight-chain alkanediyl group is 1 or 2. A does not include a cyclohexylcarbonyloxy structure. Rf1and Rf2are each independently a hydrogen atom, a C1–20 monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. When there are multiple Rf1and Rf2, the Rf1and Rf2are each the same or different. At least one of Rf1and Rf2is a fluorine atom or a monovalent fluorinated hydrocarbon group. m1 is an integer from 1 to 4, inclusive. m2 is 0 or 1. n is an integer from 1 to 3, inclusive. Z+is a monovalent radiation-sensitive onium cation. The number of fluorine atoms in Z+is no more than 8.) (In formula (2), RAis a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. L is a single bond or a divalent linking group. W is a monocyclic lactone structure, a monocyclic carbonate structure, a monocyclic sultone structure, a monocyclic sulfone structure, or a monocyclic ether structure. R11is a C1–10 monovalent organic group, a cyano group, a nitro group, a hydroxy group, or an amino group. When there are multiple R11, the R11 are each the same or different. p is an integer from 0 to 3, inclusive. q is 0 or 1.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 20/26 - Esters containing oxygen in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

68.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024032896
Publication Number 2025/070125
Status In Force
Filing Date 2024-09-13
Publication Date 2025-04-03
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Miyao,kensuke
  • Okazaki,satoshi
  • Inami,hajime
  • Egawa,fuyuki

Abstract

Provided is a radiation-sensitive composition and a pattern formation method with which sensitivity, LWR performance, pattern rectangularity, CDU performance, pattern circularity, MEEF, and exposure margin can be exhibited at a sufficient level when a pattern is formed. This radiation-sensitive resin composition comprises: a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2), a polymer containing structural units having an acid-dissociable group, and a solvent. (In formula (1), A is a C1–C40 (1+n)-valent organic group. Rf1and Rf2are each independently a hydrogen atom, a C1–C20 monovalent organic group, a fluorine atom, or a monovalent fluorinated hydrocarbon group. When both Rf1and Rf2are present in pluralities, the plurality of Rf1and Rf2are the same as or different from each other. At least one of Rf1and Rf2is a fluorine atom or a monovalent fluorinated hydrocarbon group. R1and R2are each independently a hydrogen atom, a fluorine atom, or a C1–C20 monovalent organic group. When both R1and R2are present in pluralities, the plurality of R1and R211 +11 +.) (In formula (2), R433 −22 + is a monovalent organic cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 20/26 - Esters containing oxygen in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

69.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024027546
Publication Number 2025/062850
Status In Force
Filing Date 2024-08-01
Publication Date 2025-03-27
Owner JSR CORPORATION (Japan)
Inventor
  • Nonoyama,yoshiki
  • Yokoi,hiroki
  • Yamaguchi,shogo
  • Nishikori,katsuaki
  • Osawa,sosuke

Abstract

The present invention addresses the problem of providing: a radiation-sensitive composition and a pattern formation method with which it is possible to achieve sufficient levels of sensitivity, development contrast, development residue suppression property, and limit resolution property during formation of a pattern; and a polymer which can be used suitably for the radiation-sensitive composition. The radiation-sensitive composition contains: a polymer (A) containing a structural unit that has an acid-dissociable group, a structural unit that has a first organic acid anion (b1) and a first onium cation (c1) and includes a first acid-generating structure capable of generating, when exposed, an acid that induces the dissociation of the acid-dissociable group, and a structural unit that has a second organic acid anion (b2) and a second onium cation (c2) and includes a second acid-generating structure capable of generating, when exposed, an acid that does not induce the dissociation of the acid-dissociable group; and a solvent (B). The polymer (A) includes a partial structure represented by formula (i). (In formula (i), Ar represents a 5- to 20-membered aromatic ring having a valency of (m1 + m2 + m3 +1); X1represents a hydroxy group, a carboxy group, a sulfonic acid group, or a mercapto group, wherein, when there are a plurality of X1's, the plurality of X1's are the same as or different from each other; R1represents an acid-dissociable group or a non-acid-dissociable group, wherein, when there is one R1, the R1represents an acid-dissociable group, and when there are a plurality of R1's, at least one of the plurality of R1's represents an acid-dissociable group, and when there are a plurality of R1's, the plurality of R1's are the same as or different from each other; R2represents a halogen atom, a cyano group, a nitro group, or a monovalent organic group (excluding -COOR1), wherein, when there are a plurality of R2's, the plurality of R2's are the same as or different from each other; m1 represents an integer of 1-5, m2 represents an integer of 0-5, and m3 represents an integer of 0-6, wherein 2 ≤ m1 + m2; and "*" represents a bond to another structure in the polymer (A).)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

70.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024025965
Publication Number 2025/057562
Status In Force
Filing Date 2024-07-19
Publication Date 2025-03-20
Owner JSR CORPORATION (Japan)
Inventor
  • Nonoyama,yoshiki
  • Yokoi,hiroki
  • Yamaguchi,shogo
  • Osawa,sosuke

Abstract

Provided are a radiation-sensitive composition and pattern formation method that can exhibit satisfactory levels of sensitivity, CDU, and development defect suppression during pattern formation; and a polymer that can be advantageously used in said radiation-sensitive composition. This radiation-sensitive composition contains: a polymer (A) comprising a structural unit (I) having an acid-dissociable group, a structural unit (II) that has a first organic acid anion (b1) and a first onium cation (c1) and that contains a first acid-generating structure that upon exposure generates an acid that induces dissociation of the acid-dissociable group, and a structural unit (III) that has a second organic acid anion (b2) and a second onium cation (c2) and that contains a second acid-generating structure that upon exposure generates an acid that does not induce dissociation of the acid-dissociable group; and a solvent (B). The polymer (A) has at least one alcoholic hydroxyl group, and the second onium cation (c2) is a radiation-sensitive onium cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

71.

METHOD FOR MANUFACTURING ELECTROCONDUCTIVE FILM, TOUCH PANEL, AND DISPLAY PANEL

      
Application Number JP2024029040
Publication Number 2025/057653
Status In Force
Filing Date 2024-08-15
Publication Date 2025-03-20
Owner JSR CORPORATION (Japan)
Inventor
  • Yasuda,hiroyuki
  • Katsui,hiromitsu
  • Oono,ryuuzou
  • Yasuike,nobuo

Abstract

Provided are an organic resin material that makes it possible to uniformly fix an electroconductive carbon material over the entirety of an electroconductive film formation region, a method for manufacturing an electroconductive film using the organic resin material, and a touch panel and a display panel each comprising an electroconductive film manufactured by means of the manufacturing method. The method comprises: a step (A) for applying an organic resin material containing a polymer obtained by reacting an aliphatic tetracarboxylic acid dianhydride with an aliphatic diamine onto a base material to form an organic resin layer; a step (B) for applying a dispersion liquid containing a dispersant and carbon nanotubes onto the organic resin layer after the step (A) to form a coating film; a step (C) for drying the coating film after the step (B); and a step (D) for depositing a dispersant extraction liquid after the step (C), thereby removing the dispersant from the coating film.

IPC Classes  ?

  • H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
  • B05D 1/36 - Successively applying liquids or other fluent materials, e.g. without intermediate treatment
  • B05D 3/10 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
  • B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials

72.

SUBSTRATE FOR SEMICONDUCTOR PRODUCTION, METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR PRODUCTION, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

      
Application Number JP2024031111
Publication Number 2025/053057
Status In Force
Filing Date 2024-08-30
Publication Date 2025-03-13
Owner JSR CORPORATION (Japan)
Inventor
  • Yamada,shuhei
  • Yoneda,eiji

Abstract

The present invention provides: a substrate for semiconductor production which is excellent in suppression of collapse of a resist pattern; a method for producing a substrate for semiconductor production; and a method for producing a semiconductor substrate. Provided is a substrate for semiconductor production comprising a substrate that has a thin film, wherein the thin film has a group derived from a compound represented by formula (1). (In formula (1), R1 is an C1-40 n-valent organic group. n is an integer of 1-4.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/004 - Photosensitive materials
  • G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F 7/20 - ExposureApparatus therefor
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

73.

METHOD FOR MANUFACTURING SURFACE-TREATED SUBSTRATE, METHOD FOR SELECTIVELY MODIFYING SUBSTRATE SURFACE, AND COMPOSITION FOR SEMICONDUCTOR TREATMENT

      
Application Number JP2024024786
Publication Number 2025/052776
Status In Force
Filing Date 2024-07-09
Publication Date 2025-03-13
Owner JSR CORPORATION (Japan)
Inventor
  • Komatsu, Hiroyuki
  • Suhara, Ryou
  • Hagi, Shin-Ichirou
  • Yamada, Shota
  • Akagi, Soichiro
  • Mori, Kosuke

Abstract

A method for manufacturing a surface-treated substrate according to the present invention includes a step for applying a composition to the surface of a substrate including a first region and a second region different in material from the first region to selectively modify the surface of the substrate. The composition contains: compound (A) that is at least one compound selected from the group consisting of a compound represented by formula (1), a compound represented by formula (2), and a compound represented by formula (3); and 1 mass% or more of water with respect to the total amount of the composition. R1, R4, and R8 are each independently a monovalent chain group having 9 or more carbon atoms.

IPC Classes  ?

  • H01L 21/28 - Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups

74.

PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR RESIST UNDERLAYER FORMATION

      
Application Number JP2024029817
Publication Number 2025/047565
Status In Force
Filing Date 2024-08-22
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Hirasawa,kengo
  • Tanaka,ryotaro
  • Oka,yuki
  • Yoshinaka,sho

Abstract

The present invention provides: a production method for a semiconductor substrate that makes it possible to form a resist underlayer having excellent pattern rectangularity; and a composition for resist underlayer formation. Provided is a production method for a semiconductor substrate, said method comprising: a step for applying a composition for resist underlayer formation directly or indirectly onto a substrate; a step for applying a composition resist film formation directly or indirectly onto a resist underlayer formed in the step for applying the composition for resist underlayer formation; a step for exposing a resist film formed in the step for applying the composition resist film formation; and a step for developing at least the exposed resist film. The composition for resist underlayer formation contains a compound and a solvent. The compound comprises -ORA, where RAis a hydrogen atom, a C1-10 monovalent heteroatom-containing group, or a C1-10 monovalent organic group (excluding C1-10 monovalent heteroatom-containing groups). Among the structures constituting RA, when the proportion of hydrogen atoms is represented as x, the proportion of the C1-10 monovalent heteroatom-containing group is represented as y, and the proportion of the C1-10 monovalent organic group is represented as z, in the entirety of the compound, x+y+z=100, and the relations 20≤x≤95 and 5≤y≤80 are satisfied. The compound is a polymer which has a repeating unit represented by formula (1), an aromatic-ring-containing compound which has a molecular weight of 750-3,000 and which comprises -ORA, or a combination of these. (In formula (1), Ar1is a divalent group having a 5- to 40-membered aromatic ring. R0is a hydrogen atom or a C1-40 monovalent organic group. R1is a C1-40 monovalent organic group. At least one selected from the group consisting of Ar1, R0, and R1has -ORA.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08G 61/10 - Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aromatic carbon atoms, e.g. polyphenylenes

75.

PHOTOSENSITIVE COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING SAME, LIQUID CRYSTAL DEVICE, SEMICONDUCTOR DEVICE, POLYMER, AND COMPOUND

      
Application Number JP2024030378
Publication Number 2025/047698
Status In Force
Filing Date 2024-08-27
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Murakami, Yoshitaka
  • Okada, Takashi
  • Satou, Mitsuo

Abstract

This photosensitive composition contains: a polymer derived from a monomer having a C1-C3 halogenated alkyl group containing at least one hydrogen atom, and including a structural unit (a1) having a hydroxyl group; and a photosensitive compound.

IPC Classes  ?

  • G03F 7/023 - Macromolecular quinonediazidesMacromolecular additives, e.g. binders
  • C08G 73/10 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

76.

CELL ADHESIVE PARTICLE AND PARTICLE PRODUCTION METHOD

      
Application Number JP2024024619
Publication Number 2025/047128
Status In Force
Filing Date 2024-07-08
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Kikuchi, Masahiro
  • Kobayashi, Kunihiko
  • Sakaguchi, Sayaka
  • Tomita, Koki
  • Kawabata, Shingo

Abstract

The present invention provides particles having excellent cell adhesiveness. Cell adhesive particles according to the present invention each contain, in a molecule, a structural unit having at least one selected from groups represented by formula (1) and groups represented by formula (2). [In formula (1), R1represents an alkanediyl group having 2-10 carbon atoms, R2and R3each independently represent a hydrogen atom or an alkyl group having 1-10 carbon atoms, and * represents a binding site.] [In formula (2), R4represents an alkanediyl group having 2-10 carbon atoms, R5-R7each independently represent a hydrogen atom or an alkyl group having 1-10 carbon atoms, X- represents a counter anion, and * represents a binding site.]

IPC Classes  ?

  • C12M 3/00 - Tissue, human, animal or plant cell, or virus culture apparatus
  • C08F 2/18 - Suspension polymerisation
  • C08F 20/12 - Esters of monohydric alcohols or phenols

77.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024026468
Publication Number 2025/047218
Status In Force
Filing Date 2024-07-24
Publication Date 2025-03-06
Owner JSR CORPORATION (Japan)
Inventor
  • Nonoyama,yoshiki
  • Yokoi,hiroki
  • Yamaguchi,shogo
  • Osawa,sosuke

Abstract

Provided are a radiation-sensitive composition and a pattern formation method capable of exhibiting, at sufficient levels, sensitivity, development contrast, development defect suppression property, and limit resolution when forming patterns. This radiation-sensitive composition contains a polymer and a solvent. The polymer includes: a structural unit (I) that has an iodo group and that also has an acid-dissociable group; a structural unit (II) that has a first organic acid anion and a first onium cation and that includes a first acid-generating structure for generating, through exposure to light, an acid that induces dissociation of the acid-dissociable group; and a structural unit (III) that has a second organic acid anion and a second onium cation, and that includes a second acid-generating structure for generating, through exposure to light, an acid that does not induce dissociation of the acid-dissociable group.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/22 - Esters containing halogen
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

78.

SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND FILM-FORMING COMPOSITION

      
Application Number JP2024027062
Publication Number 2025/041533
Status In Force
Filing Date 2024-07-30
Publication Date 2025-02-27
Owner JSR CORPORATION (Japan)
Inventor
  • Kimata,hironori
  • Serizawa,ryuichi
  • Ozaki,yuki

Abstract

Provided are: a semiconductor substrate production method that uses a metal-containing resist underlayer film capable of imparting favorable rectangularity to a metal resist pattern; and an underlayer film-forming composition for a first metal-containing resist. This semiconductor substrate production method includes a step for coating a substrate with a film-forming composition. The film-forming composition contains a solvent and a metal compound comprising at least a metal atom and an organic acid. The organic acid is a compound represented by formula (1). (In formula (1), R1is a hydroxy group, a nitro group, a halogen atom or a C1-20 monovalent organic group (excluding the structure corresponding to -L1-COOH and the structure corresponding to X in the formula). Ar1is a C3-30 r+s+t-valent aromatic ring structure. X is a crosslinkable group. L1represents a single bond or a divalent linking group. t is an integer of 0-2. When t is 2, the two R1are the same or different. r is an integer of 1-4. When r is 2 or more, the plurality of X are the same or different. s is an integer of 1-4. When s is 2 or more, the plurality of L1 are the same or different.)

IPC Classes  ?

  • H01L 21/314 - Inorganic layers
  • C09D 7/63 - Additives non-macromolecular organic
  • C09D 149/00 - Coating compositions based on homopolymers or copolymers of compounds having one or more carbon-to-carbon triple bondsCoating compositions based on derivatives of such polymers
  • C09D 201/00 - Coating compositions based on unspecified macromolecular compounds
  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • H01L 21/3065 - Plasma etchingReactive-ion etching

79.

PHOTOSENSITIVE RESIN COMPOSITION FOR PRODUCING PLATED MOLDED ARTICLE, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED MOLDED ARTICLE

      
Application Number JP2024028954
Publication Number 2025/041685
Status In Force
Filing Date 2024-08-14
Publication Date 2025-02-27
Owner JSR CORPORATION (Japan)
Inventor
  • Horikawa Shuhei
  • Matsumoto Tomoyuki
  • Nishiguchi Naoki
  • Okamoto Erika

Abstract

An embodiment of the present invention relates to a photosensitive resin composition for producing a plated molded article, a method for producing a resist pattern film, and a method for producing a plated molded article. Said composition contains: a (meth)acrylic polymer (A1) having an acid dissociable group; a photoacid generator (B); at least one compound (C) selected from the group consisting of an organic carboxylic acid compound (C1) having a pKa of 4.5 or less, an organic carboxylic acid anhydride (C2) having a pKa of 4.5 or less, and a polyhydric phenol compound (C3) having a CLogP of 4.5 or less; and a solvent (G).

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking

80.

PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE

      
Application Number JP2024028955
Publication Number 2025/041686
Status In Force
Filing Date 2024-08-14
Publication Date 2025-02-27
Owner JSR CORPORATION (Japan)
Inventor
  • Matsumoto Tomoyuki
  • Higuchi Tetsuya
  • Kiriyama Takashi
  • Horikawa Shuhei
  • Nishiguchi Naoki

Abstract

One embodiment of the present invention relates to a photosensitive resin composition, a method for producing a resist pattern film, or a method for producing a plated shaped article. The photosensitive resin composition contains a polymer (A1) that is selected from among an alkali-soluble polymer and a polymer having an acid dissociable group, a polymer (A2) that is selected from among an alkali-soluble polymer and a polymer having an acid dissociable group, a photoacid generator (B), and a solvent (C). The glass transition temperature (Tg) of the polymer (A2) is -45°C to 25°C, and the glass transition temperature (Tg) of the polymer (A1) is higher than the Tg of the polymer (A2) by 55°C to 120°C.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking

81.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024021937
Publication Number 2025/037476
Status In Force
Filing Date 2024-06-17
Publication Date 2025-02-20
Owner JSR CORPORATION (Japan)
Inventor
  • Miyata, Hiromu
  • Kitamura, Koki
  • Osawa, Sosuke

Abstract

This radiation-sensitive composition comprises a polymer which contains, in the same molecule, a first structural unit having an acid-dissociable group, a second structural unit having a radiation-sensitive onium cation and a sulfonic acid anion, and a third structural unit having a radiation-sensitive onium cation and a carboxylic acid anion, and in which the content ratio of the first structural unit is at least 55 mol% with respect to all the structural units.

IPC Classes  ?

82.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024021936
Publication Number 2025/032972
Status In Force
Filing Date 2024-06-17
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Osawa, Sosuke
  • Hae, Takuma
  • Sakai, Hikaru

Abstract

This radiation-sensitive composition contains a polymer containing: a first structural unit having a radiation-sensitive onium cation and a sulfonic acid anion; a second structural unit having a radiation-sensitive onium cation and a carboxylic acid anion; and a third structural unit represented by formula (1). In formula (1), R1represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. B1is a single bond or a divalent hydrocarbon group. L1is a divalent organic group. R2 is an acid-decomposable group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

83.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING UNDERLAYER FILM FOR METAL-CONTAINING RESIST

      
Application Number JP2024025960
Publication Number 2025/033138
Status In Force
Filing Date 2024-07-19
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Kasai,tatsuya
  • Takada,kazuya

Abstract

Provided are a method for manufacturing a semiconductor substrate with which it is possible to form an underlayer film for a metal-containing resist capable of achieving excellent rectangularity in a resist pattern, and a composition for forming an underlayer film for a metal-containing resist. This method for manufacturing a semiconductor substrate comprises: a step for directly or indirectly applying, to a substrate, a composition for forming an underlayer film for a metal-containing resist; a step for forming a metal-containing resist film on an underlayer film for a metal-containing resist, the underlayer film being formed by means of the step for applying the composition for forming an underlayer film for a metal-containing resist; a step for exposing the metal-containing resist film to extreme ultraviolet rays; and a step for developing at least the exposed metal-containing resist film. The composition for forming an underlayer film for a metal-containing resist contains a solvent and a compound having a structural unit (α) represented by formula (1-1). (In formula (1-1), a is an integer of 1-3. R1is a C1-20 monovalent organic group, a hydroxy group, or a halogen atom. b is an integer of 0-2. When b is 2, the two R1 are the same as each other or are different from one another. However, a + b is 3 or less.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08G 77/12 - Polysiloxanes containing silicon bound to hydrogen
  • C08G 77/24 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen halogen-containing groups
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

84.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER

      
Application Number JP2024021935
Publication Number 2025/032971
Status In Force
Filing Date 2024-06-17
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Osawa, Sosuke
  • Kobayashi, Atsushi
  • Motoyama, Kazuki

Abstract

This radiation-sensitive composition contains a polymer containing: a first structural unit having a radiation-sensitive onium cation and a sulfonic acid anion; a second structural unit having a radiation-sensitive onium cation and a carboxylic acid anion; and a third structural unit represented by formula (1). In formula (1), Ar1is a group obtained by removing (s+t+1) hydrogen atoms from an aromatic hydrocarbon ring. s is an integer of 1 or higher. t is an integer of 1 or higher. R2is a hydroxy group, an alkyl group, an alkoxy group or -OX1. X1 is an acid-decomposable group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

85.

RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT

      
Application Number JP2024024568
Publication Number 2025/033056
Status In Force
Filing Date 2024-07-08
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Nemoto,ryuichi
  • Abe,yudai
  • Nishii,atsuto
  • Mita,michihiro
  • Inami,hajime
  • Egawa,fuyuki

Abstract

Provided are: a radiation-sensitive composition capable of exhibiting excellent sensitivity, CDU performance, DOF performance, pattern circularity, LWR performance, pattern rectangularity, and development defect suppression when forming a pattern; a pattern formation method; and an onium salt. This radiation-sensitive composition contains an onium salt represented by formula (1) (hereinafter, also referred to as an "onium salt (1)"), a polymer containing a structural unit (I) having an acid-dissociable group, and a solvent. (In formula (1), Ar1is an (a1 + b1 +1)-valent aromatic ring. Ar2is an (a2 + b2 +1)-valent aromatic ring. X1and X2are each independently a monovalent organic group having 1-20 carbon atoms, a cyano group, a nitro group, or a halogen atom. When multiple X1and multiple X2are present, the multiple X1and the multiple X2are each identical to or different from each other. Y1is a monovalent organic group having 4-20 carbon atoms and bonded via Ar122-, or a monovalent perfluoroalkyl group having 1-20 carbon atoms. When multiple Y1are present, the multiple Y1are identical to or different from each other. Y2is a monovalent organic group having 4-20 carbon atoms and bonded via Ar222-, or a monovalent perfluoroalkyl group having 1-20 carbon atoms. When multiple Y2are present, the multiple Y2are identical to or different from each other. L is a single bond or a divalent linking group having 1-5 carbon atoms. a1, a2, b1, and b2 are each independently an integer of 0-5. When the aromatic ring of Ar2 is a benzene ring, b1 + b2 ≥ 1.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 63/04 - Monocyclic monocarboxylic acids
  • C07C 65/21 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups
  • C07C 255/56 - Carboxylic acid nitriles having cyano groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing cyano groups and doubly-bound oxygen atoms bound to the carbon skeleton
  • C07C 317/14 - SulfonesSulfoxides having sulfone or sulfoxide groups bound to carbon atoms of six-membered aromatic rings
  • C07D 207/34 - Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
  • C07D 209/30 - IndolesHydrogenated indoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, directly attached to carbon atoms of the hetero ring
  • C07D 209/88 - CarbazolesHydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
  • C07D 307/56 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
  • C07D 307/79 - Benzo [b] furansHydrogenated benzo [b] furans with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
  • C07D 307/88 - Benzo [c] furansHydrogenated benzo [c] furans with one oxygen atom directly attached in position 1 or 3
  • C07D 317/22 - Radicals substituted by singly bound oxygen or sulfur atoms etherified
  • C07D 317/62 - Methylenedioxybenzenes or hydrogenated methylenedioxybenzenes, unsubstituted on the hetero ring with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to atoms of the carbocyclic ring
  • C07D 317/72 - Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
  • C07D 333/28 - Halogen atoms
  • C07D 333/62 - Benzo [b] thiophenesHydrogenated benzo [b] thiophenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the hetero ring
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

86.

PHOTOSENSITIVE COMPOSITION, PATTERN FILM AND METHOD FOR PRODUCING SAME, DISPLAY DEVICE, OPTICAL MATERIAL, AND SOLID-STATE IMAGING ELEMENT

      
Application Number JP2024027984
Publication Number 2025/033396
Status In Force
Filing Date 2024-08-06
Publication Date 2025-02-13
Owner JSR CORPORATION (Japan)
Inventor
  • Matsumura, Nobuji
  • Akiike, Toshiyuki

Abstract

Disclosed is a photosensitive composition which contains the components (A) and (B) described below. (A): One or more Si-containing compounds selected from among (A1) and (A2) described below (A1): An Si-containing compound that has a structural unit a1 having an alkali-soluble group and a polymerizable group, and a structural unit a2 having a polymerizable group or a structural unit a3 having an alkali-soluble group (A2): An Si-containing compound that has a structural unit a2 having a polymerizable group and a structural unit a3 having an alkali-soluble group (B): Photopolymerization initiator

IPC Classes  ?

  • G03F 7/075 - Silicon-containing compounds
  • C08F 299/08 - Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polysiloxanes
  • C08G 77/20 - Polysiloxanes containing silicon bound to unsaturated aliphatic groups
  • C08G 77/38 - Polysiloxanes modified by chemical after-treatment
  • G02B 1/111 - Anti-reflection coatings using layers comprising organic materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
  • H01L 27/146 - Imager structures

87.

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND RESIST UNDERLAYER FILM-FORMING COMPOSITION

      
Application Number JP2024026067
Publication Number 2025/028314
Status In Force
Filing Date 2024-07-22
Publication Date 2025-02-06
Owner JSR CORPORATION (Japan)
Inventor
  • Dobashi,masato
  • Akita,shunpei
  • Dei,satoshi
  • Hayashi,yuya
  • Miyauchi,hiroyuki
  • Takanashi,kazunori
  • Takada,kazuya
  • Kasai,tatsuya

Abstract

Provided are: a resist underlayer film-forming composition that is capable of forming a resist underlayer film that can impart excellent pattern rectangularity to a resist pattern; and a method for producing a semiconductor substrate. The method for producing a semiconductor substrate comprises: a step for directly or indirectly coating a substrate with a resist underlayer film-forming composition; a step for forming a resist film on the resist underlayer film formed by the aforementioned step for coating a resist underlayer film-forming composition; a step for exposing the resist film to radiation; and a step for developing at least the exposed resist film. The resist underlayer film-forming composition contains a polymer and a solvent. The polymer contains a repeating unit (1) having an organosulfonate anion moiety and an onium cation moiety, a repeating unit (2) represented by formula (2), and a repeating unit (3) represented by formula (3). (In formula (2), R4is a group selected from the group consisting of groups represented by any of formulas (2-1) to (2-8).) (In formula (3), R6is a group that contains a substructure represented by formula (3-1) or (3-2).) (In formulas (3-1) and (3-2), X1and X2 are each independently an oxygen atom, a sulfur atom, or a nitrogen atom. A formula in which a solid line and a broken line are combined indicates a single bond or a double bond each independently.)

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • C08F 220/38 - Esters containing sulfur
  • C08F 228/02 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
  • G03F 7/095 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

88.

POLYPROPYLENE RESIN FOAM PARTICLES

      
Application Number JP2024026133
Publication Number 2025/028323
Status In Force
Filing Date 2024-07-22
Publication Date 2025-02-06
Owner JSP CORPORATION (Japan)
Inventor Koshita Nobumasa

Abstract

These polypropylene resin foam particles each have a foam core layer composed of a polypropylene resin, and a coating layer covering the foam core layer. The coating layer is composed of linear low-density polyethylene. The mass ratio of the coating layer to the foam core layer is 0.005-0.05. The polypropylene resin constituting the foam core layer satisfies a prescribed condition (i) or (ii). Said foam particles can remarkably reduce the steam pressure at the time of in-mold molding, can shorten the curing time, and furthermore makes it possible to obtain a foam particle molded article that has a desired shape and is excellent in appearance even when the curing time is shortened.

IPC Classes  ?

  • C08J 9/18 - Making expandable particles by impregnating polymer particles with the blowing agent

89.

ANTIFERROMAGNETIC BODY MATERIAL, TWO-LAYER FILM OF MAGNETIC BODY AND INSULATOR, TUNNEL MAGNETORESISTIVE ELEMENT, AND MAGNETIC MEMORY

      
Application Number JP2024026734
Publication Number 2025/028421
Status In Force
Filing Date 2024-07-26
Publication Date 2025-02-06
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
  • TOHOKU UNIVERSITY (Japan)
Inventor
  • Toga,yuuta
  • Koretsune,takashi
  • Tanaka,katsuhiro
  • Nakatsuji,satoru

Abstract

31-xx1-pp3qr1-q-r1-q-r (0

IPC Classes  ?

  • H10N 50/10 - Magnetoresistive devices
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/20 - Spin-polarised current-controlled devices
  • H10N 52/00 - Hall-effect devices

90.

METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT

      
Application Number JP2024025310
Publication Number 2025/018303
Status In Force
Filing Date 2024-07-12
Publication Date 2025-01-23
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
Inventor
  • Inukai Kouji
  • Toga Yuuta
  • Nakatsuji Satoru
  • Idzuchi Hiroshi

Abstract

Provided is a method for manufacturing a magnetic tunnel junction element provided with a magnetic tunnel junction layer and a metal layer in the stated order directly or indirectly on a substrate, the method comprising: a step for applying, to the metal layer, a resist composition containing a polymer that has a structural unit containing an aromatic ring; a step for exposing a resist film formed through the application step; a step for developing the exposed resist film; and a step for etching the magnetic tunnel junction layer and the metal layer using, as a mask, a resist pattern formed through the development step.

IPC Classes  ?

  • H10N 50/01 - Manufacture or treatment
  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking
  • H05K 1/03 - Use of materials for the substrate
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/20 - Spin-polarised current-controlled devices

91.

METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT

      
Application Number JP2024025315
Publication Number 2025/018305
Status In Force
Filing Date 2024-07-12
Publication Date 2025-01-23
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
Inventor
  • Inukai Kouji
  • Toga Yuuta
  • Nakatsuji Satoru
  • Idzuchi Hiroshi

Abstract

A method for manufacturing a magnetic tunnel junction element comprising a magnetic tunnel junction layer and a metal layer directly or indirectly on a substrate in this order, the method comprising: a step for forming a resist underlayer film on the metal layer; a step for forming a silicon oxide film on the resist underlayer film; and a step for forming a resist film on the silicon oxide film, wherein the resist underlayer film is formed from a resist underlayer film-forming composition containing a compound having an aromatic ring and a solvent.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking
  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H10N 50/01 - Manufacture or treatment
  • H10N 50/10 - Magnetoresistive devices
  • H10N 50/20 - Spin-polarised current-controlled devices

92.

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND UNDERLAYER FILM-FORMING COMPOSITION FOR FIRST METAL-CONTAINING RESIST

      
Application Number JP2024024583
Publication Number 2025/013817
Status In Force
Filing Date 2024-07-08
Publication Date 2025-01-16
Owner JSR CORPORATION (Japan)
Inventor
  • Serizawa,ryuichi
  • Yamada,shuhei
  • Ozaki,yuki
  • Kimata,hironori

Abstract

Provided are: a method for manufacturing a semiconductor substrate that uses an underlayer film for a metal-containing resist, the underlayer film capable of imparting good rectangularity to a metal resist pattern; and an underlayer film-forming composition for a first metal-containing resist. This method for manufacturing a semiconductor substrate includes: a step for directly or indirectly coating a substrate with an underlayer film-forming composition for a first metal-containing resist; a step for forming a metal-containing resist film, which is made of a second metal-containing resist forming material, on an underlayer film for a metal-containing resist, the underlayer film having been formed by the underlayer film-forming composition coating step for the first metal-containing resist; a step for exposing the metal-containing resist film to extreme ultraviolet rays; and a step for developing the exposed metal-containing resist film. The underlayer film-forming composition for the first metal-containing resist contains a solvent and a metal compound composed of at least a metal atom and an organic acid.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/004 - Photosensitive materials
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

93.

METHOD FOR PRODUCING ORGANIC COMPOUND AND MECHANOCHEMICAL REACTOR

      
Application Number JP2024021956
Publication Number 2025/009373
Status In Force
Filing Date 2024-06-18
Publication Date 2025-01-09
Owner JSR CORPORATION (Japan)
Inventor
  • Ishimura,toshiki
  • Nawate,yuuya
  • Kato,takumi
  • Sugawara,tetsunori

Abstract

Provided are: a method for producing an organic compound, the method simply and economically rationally enabling a reaction by a mechanochemical method; and a mechanochemical reactor. Provided is a method for producing an organic compound, the method comprising a step for carrying out a reaction in a reactor, wherein the reactor comprises a non-metal reaction container and a plurality of stirring media having been charged into the reaction container, at least the surfaces of the stirring media being non-metal, and the reaction is carried out by a mechanochemical method by means of relative movement between the reaction container and the stirring media. In this method, the acceleration of the movement of the stirring media caused by the movement of the reaction container is 9.83 m/s2 or less.

IPC Classes  ?

  • C07C 1/32 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon starting from compounds containing hetero atoms other than, or in addition to, oxygen or halogen
  • C07B 61/00 - Other general methods
  • C07C 5/44 - Preparation of hydrocarbons from hydrocarbons containing the same number of carbon atoms by dehydrogenation with a hydrogen acceptor with a halogen or a halogen-containing compound as an acceptor
  • C07C 13/62 - Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with more than three condensed rings
  • C07C 15/24 - Polycyclic condensed hydrocarbons containing two rings
  • C07C 29/40 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring increasing the number of carbon atoms by reactions with formation of hydroxy groups, which may occur via intermediates being derivatives of hydroxy groups, e.g. O-metal by reaction with aldehydes or ketones with compounds containing carbon-to-metal bonds
  • C07C 29/143 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of an oxygen-containing functional group of C=O containing groups, e.g. —COOH of ketones
  • C07C 33/24 - Monohydroxylic alcohols containing only six-membered aromatic rings as cyclic part polycyclic without condensed ring systems
  • C07C 33/26 - Polyhydroxylic alcohols containing only six-membered aromatic rings as cyclic part
  • C07C 45/46 - Friedel-Crafts reactions
  • C07C 49/784 - Ketones containing a keto group bound to a six-membered aromatic ring polycyclic with all keto groups bound to a non-condensed ring
  • C07C 231/02 - Preparation of carboxylic acid amides from carboxylic acids or from esters, anhydrides, or halides thereof by reaction with ammonia or amines
  • C07C 233/15 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by halogen atoms or by nitro or nitroso groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring

94.

RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER AND METHOD FOR PRODUCING SAME, AND COMPOUND

      
Application Number JP2024022828
Publication Number 2025/009429
Status In Force
Filing Date 2024-06-24
Publication Date 2025-01-09
Owner JSR CORPORATION (Japan)
Inventor
  • Shiratani, Motohiro
  • Motoyama, Kazuki
  • Rozhanskii, Igor
  • Nishikori, Katsuaki
  • Miyata, Hiromu
  • Abe, Shin-Ya

Abstract

This radiation-sensitive composition contains a polymer represented by formula (1). In formula (1), A1and A2each independently represent a group represented by formula (a-1), formula (a-2), formula (a-3), or formula (a-4). B1represents a divalent group having a partial structure by which the bond between A1and A2mediated by B1can be cut by the action of an acid. P1and P2 are each independently a molecule chain.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 2/44 - Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
  • C08F 20/00 - Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
  • C08F 212/06 - Hydrocarbons
  • C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/20 - ExposureApparatus therefor

95.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND REVERSAL PATTERN FORMING MATERIAL

      
Application Number JP2024021987
Publication Number 2025/009380
Status In Force
Filing Date 2024-06-18
Publication Date 2025-01-09
Owner JSR CORPORATION (Japan)
Inventor
  • Serizawa,ryuichi
  • Kasai,tatsuya
  • Ozaki,yuki

Abstract

Provided are: a semiconductor substrate manufacturing method with which it is possible to improve the etching resistance of a reversal pattern of a metal-containing resist pattern and the rectangularity of the reversal pattern; and a reversal pattern forming material. This semiconductor substrate manufacturing method comprises: a step for forming a metal-containing resist film directly or indirectly on a substrate with use of a metal-containing resist forming material; a step for subjecting the metal-containing resist film to light exposure by means of extreme ultraviolet light; a step for developing the light-exposed metal-containing resist film; a step for forming, on the metal-containing resist pattern that is formed in the development step, a film for reversal pattern formation with use of a reversal pattern forming material; and a step for removing the metal-containing resist pattern so as to form a reversal pattern that is formed of the film for reversal pattern formation. The metal-containing resist forming material contains tin atoms, and the reversal pattern forming material contains silicon atoms.

IPC Classes  ?

96.

METHOD FOR MANUFACTURING MAGNETIC STORAGE ELEMENT

      
Application Number JP2024023703
Publication Number 2025/009492
Status In Force
Filing Date 2024-07-01
Publication Date 2025-01-09
Owner
  • JSR CORPORATION (Japan)
  • THE UNIVERSITY OF TOKYO (Japan)
Inventor
  • Inukai, Kouji
  • Toga, Yuuta
  • Ichinohe, Daigo
  • Shimizu, Makoto
  • Nakatsuji, Satoru
  • Idzuchi, Hiroshi

Abstract

The purpose of the present invention is to manufacture a fine-patterned magnetic storage element with high precision. A magnetic storage element (1) includes: a magnetic tunnel junction layer (30) having a structure in which an insulating layer (32) is sandwiched between two magnetic layers (31) and (33), and in which the resistance state changes in accordance with the magnetization direction of one of the magnetic layer (31) and the magnetic layer (33); and a metal layer (40) provided on the magnetic tunnel junction layer (30). A method for manufacturing the magnetic storage element (1) includes a step for forming a resist film (50) having an opening (50a) on a substrate (10) on which an electrode layer (20) is formed, a step for forming a magnetic tunnel junction layer (30) on the electrode layer (20) exposed in the opening (50a), a step for forming a metal layer (40) on the magnetic tunnel junction layer (30), and a step for removing the resist film (50).

IPC Classes  ?

  • H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
  • H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
  • H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
  • H10N 50/10 - Magnetoresistive devices

97.

RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD

      
Application Number JP2024018785
Publication Number 2025/004621
Status In Force
Filing Date 2024-05-22
Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Kiriyama,kazuya
  • Omiya,takuya

Abstract

Provided are a radiation-sensitive composition and a pattern formation method capable of exhibiting sensitivity, CDU performance, and LWR performance at a sufficient level when a resist pattern is formed using next-generation technology. In the present invention, a radiation-sensitive composition contains: a polymer including structural units having an acid-dissociable group; a radiation-sensitive acid generator containing a first organic acid anion and a first onium cation; an acid diffusion control agent that contains a second organic acid anion and a second onium cation, and generates an acid having a higher pKa than an acid generated from the radiation-sensitive acid generator under exposure to radiation; and a solvent. The first organic acid anion contains an acid anion moiety and an aromatic ring having at least both a first substituent and a second substituent. The first substituent and the second substituent are each independently a hydroxy group, a sulfo group, or a sulfanyl group. At least one selected from the group consisting of the polymer, the radiation-sensitive acid generator, and the acid diffusion control agent contains an iodo group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

98.

COMPOSITION FOR INSULATING-FILM FORMATION, INSULATING FILM, ELECTRONIC DEVICE, MULTILAYER OBJECT, AND METHOD FOR PRODUCING MULTILAYER OBJECT

      
Application Number JP2024023167
Publication Number 2025/005134
Status In Force
Filing Date 2024-06-26
Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Nosaka Naoya
  • Tabata Yuuki
  • Takanashi Kazunori
  • Hamaguchi Hitoshi

Abstract

A composition for insulating-film formation which comprises: a polyfunctional acrylate having 2-6 acrylic groups in the molecule; a free-radical photopolymerization initiator; and a solvent having a boiling point at atmospheric pressure of 100-250°C and a surface tension of 20-34 mN/m.

IPC Classes  ?

99.

OPTICAL MEMBER, SENSOR MODULE, AND METHOD FOR MANUFACTURING OPTICAL MEMBER

      
Application Number JP2024021433
Publication Number 2025/004817
Status In Force
Filing Date 2024-06-13
Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Tanaka Yukie
  • Kawabe Yasunori
  • Kishida Hiroyuki

Abstract

[Problem] To provide: an optical member that accurately eliminates noise light impinging from the perpendicular direction, is capable of improving the detection intensity ratio T2/T1 between the transmissivity T1 of perpendicular light that is noise light and the transmissivity T2 of obliquely impinging signal light designed in consideration of Snell's law, and is adaptable to flexible devices; a sensor module using the optical member; and a manufacturing method for the optical member. [Solution] An optical member containing a compound A having an absorption maximum wavelength (λmax) at a wavelength of 581-1200 nm, and provided with a first optical portion having an average transmissivity of 20% or less at the absorption maximum wavelength (λmax) ± 20 nm, and a second optical portion having an average transmissivity of 70% or more at the absorption maximum wavelength (λmax) ± 20 nm, wherein the second optical portion has an inclination of 0.1° to 70° or -0.1° to -70°, measured from the normal to the surface of the optical member, with respect to the thickness direction of the optical member.

IPC Classes  ?

  • G02B 5/22 - Absorbing filters
  • G01J 1/02 - Photometry, e.g. photographic exposure meter Details
  • G01J 1/04 - Optical or mechanical part

100.

RADIATION-SENSITIVE COMPOSITION, PATTERN FORMATION METHOD, AND RADIATION-SENSITIVE ACID GENERATION AGENT

      
Application Number JP2024022037
Publication Number 2025/004904
Status In Force
Filing Date 2024-06-18
Publication Date 2025-01-02
Owner JSR CORPORATION (Japan)
Inventor
  • Nishikori,katsuaki
  • Taniguchi,takuhiro
  • Kiriyama,kazuya

Abstract

The present invention provides a radiation-sensitive composition and a pattern formation method with which it is possible to form a resist film in which development defects can be minizied and sensitivity and CDU can be exhibited at a sufficient level when a next-generation technology is applied. The present invention also provides a radiation-sensitive acid generation agent that can be applied to the radiation-sensitive composition. The radiation-sensitive composition contains a polymer (A) containing structural units (I) having an acid dissociable group, and a solvent (C), the radiation-sensitive composition meeting criteria (i) and/or (ii) below. (i) Contains a radiation-sensitive acid generator (B) containing a first organic acid anion and a first onium cation, the first onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the first organic acid anion being a sulfonic acid anion that contains an iodine atom. (ii) The polymer (A) is a radiation-sensitive acid-generating polymer (A1) containing structural units (IV) having a second organic acid anion and a second onium cation, the second onium cation containing a halogen-free electron-withdrawing group that contains no halogen atoms, and the second organic acid anion being a sulfonic acid anion that contains an iodine atom.

IPC Classes  ?

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