According to one aspect of the present invention, an electron emission cathode, includes: a base; a heater connected to the base; an electron emitter connected to the heater at a mounting location distal to the base; and a conical heat shield surrounding a portion of the heater, having a truncated cone shape comprising a narrow end oriented toward the base and a wide end oriented toward the electron emitter.
A method of assessing thermionic electron emitter quality, comprising heating a thermionic electron emitter to an emission temperature thereby causing the emitter to emit electrons, forming the electrons emitted by the emitter into an electron beam, directing the electron beam to an image detector thereby forming an image corresponding to electron emission from a surface of the emitter, and detecting a presence or absence in the image of a pair of intersecting bright band features, each band feature being formed from two parallel lines, the band features corresponding to crystal lattice planes of the emitter. The presence of one pair of intersecting bright band features indicates a single-crystal emitter. The absence of a pair of intersecting band features indicates an amorphous or contaminated emitter. The presence of more than a single pair of intersecting bright band features indicates a polycrystalline emitter. The method is particularly useful for rare-earth hexaboride emitters.
A charged particle beam writing apparatus according to one aspect of the present invention includes an electrode configured to deflect a charged particle beam, an amplifier configured to apply a deflection potential to the electrode, a diagnostic circuit configured to diagnose the amplifier, a switching circuit arranged between an output of the amplifier and the electrode, and configured to switch the output of the amplifier between the electrode and the diagnostic circuit, an electron optical system configured to irradiate a target object with the charged particle beam deflected by being applied with the deflection potential by the amplifier, a column configured to include therein the electrode and the electron optical system, a first coaxial cable configured to connect an output side of the amplifier with the switching circuit, a second coaxial cable configured to connect the electrode with the switching circuit, a third coaxial cable configured to connect the output side of the amplifier with the diagnostic circuit, and a resistance configured to connect, parallelly to the switching circuit, an inner conductor of the first coaxial cable with an inner conductor of the second coaxial cable.
H01J 37/147 - Arrangements for directing or deflecting the discharge along a desired path
H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
An electron emission cathode which includes a base, a heater connected to the base, an electron emitter connected to the heater at a mounting location distal to the base, and a conical heat shield surrounding a portion of the heater, having a truncated cone shape comprising a narrow end oriented toward the base and a wide end oriented toward the electron emitter. The conical heat shield is configured to reflect heat radiated by the heater toward the electron emitter. The conical heat shield reduces an overheating required to bring the electron emitter to an emission temperature and reduces a heating power required to operate the cathode.
A system for determining Schottky thermal field emission (TFE) usable current and brightness of a Schottky TFE source is provided, the system including: one or more processors, configured to: acquire and store in a memory a Schottky TFE emission image in a digital format; and determine Schottky TFE usable beam current and brightness for the based on experimentally developed algorithms that utilize usable current criteria and usable emission current density, the usable current criteria being generated based on properties of a central beam component and an outer beam component of Schottky TFE beam current.
The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.
H01J 37/22 - Optical or photographic arrangements associated with the tube
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/073 - Electron guns using field emission, photo emission, or secondary emission electron sources
The present disclosure is related to a Schottky thermal field emission (TFE) source for emitting an electron beam. Exemplary embodiments can provide the acquisition of high-resolution emission images of Schottky TFE source and compute usable beam current and brightness based on experimentally developed usable current criteria. Advantages of these exemplary embodiments include: (1) obtaining usable beam current and brightness of a Schottky TFE source can be important with reference to Schottky TFE development and quality inspection, and (2) optimizing Schottky TFE operation modes so as to maximize Schottky TFE usable beam current and brightness can enable operation of multi-beam electron optical tools.
The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/073 - Electron guns using field emission, photo emission, or secondary emission electron sources
H01J 37/26 - Electron or ion microscopesElectron- or ion-diffraction tubes
9.
CHARGED PARTICLE BEAM DRAWING DEVICE AND METHOD FOR CHARGED PARTICLE BEAM DRAWING
A charged particle beam drawing device according to one aspect of the present invention is characterized by comprising: an electrode which deflects a charged particle beam; an amplifier which applies a deflection potential to the electrode; a diagnostic circuit which diagnoses the amplifier; a switching circuit which is disposed between the output of the amplifier and the electrode and which switches the output of the amplifier between the electrode and the diagnostic circuit; an electronic optical system which irradiates a sample with the charged particle beam that has been deflected by the application of the deflection potential by the amplifier; a column in which the electrode and the electronic optical system are disposed; a first coaxial cable which connects the output side of the amplifier with the switching circuit; a second coaxial cable which connects the electrode with the switching circuit; a third coaxial cable which connects the output side of the amplifier with the diagnostic circuit; and a resistance which connects an internal conductor of the first coaxial cable with an internal conductor of the second coaxial cable in parallel with the switching circuit.
A Schottky thermal field emitter (TFE) source integrated with a beam splitter by a standoff, which supports the beam splitter above the Schottky TFE extractor faceplate by a distance of 0.05 mm to 2 mm. The beam splitter includes a microhole array integrated with the standoff and being disposed opposite the extractor faceplate, the microhole array having a plurality of microholes that split the electron beam generated by the Schottky TFE into a plurality of beamlets. The support and extractor may be fabricated from the same material or from different materials. The support may be formed from a high temperature resistive material, which causes a potential difference between the extractor and the microhole array. This potential difference creates positively charged electrostatic lenses at the microholes, which increases current in the individual beamlets. Voltage on the microarray plate may be varied to achieve a high beamlet current.
An electrostatic beam transfer lens for a multi-beam apparatus that includes a series of multiple, successive electrodes, such that an aperture bore of each electrode is aligned along an electron gun axis and is configured to allow multiple beams to pass therethrough. The first electrode in the series is a cylindrical electrode configured to receive the multiple beams at an entrance plane. The first electrode has a bore length and a bore diameter such that a ratio of bore diameter/bore length<0.3. The shape of the first electrode defines the electrostatic field penetration to the entrance plane of the first electrode to prevent lens focusing fields of the electrostatic beam transfer lens from extending through the first electrode and beyond the entrance plane, thus providing a uniform, flat electric field at the entrance area of the electrostatic transfer lens.
H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
H01J 29/51 - Arrangements for controlling convergence of a plurality of beams
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
A thermal field emitter, an apparatus, and a method for generating multiple beams for an e-beam tool are provided. The thermal field emitter includes an electron emitting portion configured to emit an electron beam and a nano-aperture array (NAA) having a plurality of openings. The NAA is positioned in a path of the electron beam. The NAA is configured to form multiple beams. The multiple beams include electrons from the electron beam that pass through the plurality of openings.
A multiple electron beam irradiation apparatus includes a forming mechanism which forms multiple primary electron beams; a plurality of electrode substrates being stacked in each of which a plurality of openings of various diameter dimensions are formed, the plurality of openings being arranged at passage positions of the multiple primary electron beams, and through each of which a corresponding one of the multiple primary electron beams passes, the plurality of electrode substrates being able to adjust an image plane conjugate position of each of the multiple primary electron beams depending on a corresponding one of the various diameter dimensions; and a stage which is capable of mounting thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode substrates.
A multiple electron beam irradiation apparatus includes a shaping aperture array substrate to form multiple primary electron beams, a plurality of electrode array substrates stacked each to dispose thereon a plurality of electrodes each arranged at a passage position of each of the multiple primary electron beams, each of the multiple primary electron beams surrounded by an electrode of the plurality of electrodes when each of the multiple primary electron beams passes through the passage position, the first wiring and the second wiring applied with one of different electric potentials, and a stage to mount thereon a target object to be irradiated with the multiple primary electron beams having passed through the plurality of electrode array substrates, wherein, in each of the plurality of electrode array substrates, each of the plurality of electrodes is electrically connected to either one of the first wiring and the second wiring.
H01J 37/153 - Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
Thermionic cathodes and an electron emission apparatus are provided. The thermionic cathodes comprise perovskite material in crystal or sintered form. The thermionic cathodes provide strong electron emission at low operating temperatures.
An electron emission apparatus, an electron gun, and a method of fabrication of the electron gun are provided. The electron gun includes a cathode, a Wehnelt, and an anode. The cathode is configured to provide an electron beam. The Wehnelt has a bore. The bore is configured to pass the electron beam. The anode is disposed proximate to the cathode. The diameter of the bore of the Wehnelt and the offset between the Wehnelt and the cathode satisfy a predetermined dimensional relationship. The predetermined dimensional relationship is at least a function of a diameter of the bore of the anode and a distance between the Wehnelt and the anode.
H01J 1/148 - Solid thermionic cathodes characterised by the material with compounds having metallic conductive properties, e.g. lanthanum boride, as an emissive material
H01J 9/18 - Assembling together the component parts of electrode systems
17.
Electron optical system and multi-beam image acquiring apparatus
An electron optical system includes an electromagnetic lens configured to include a yoke, and refract an electron beam passing through the yoke by generating a magnetic field, and a shield coil disposed along the inner wall of the yoke, and configured to reduce a leakage magnetic field generated by the electromagnetic lens.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01J 37/09 - DiaphragmsShields associated with electron- or ion-optical arrangementsCompensation of disturbing fields
H01J 37/244 - DetectorsAssociated components or circuits therefor
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G01N 21/956 - Inspecting patterns on the surface of objects
H01J 37/05 - Electron- or ion-optical arrangements for separating electrons or ions according to their energy
18.
High-brightness lanthanum hexaboride cathode and method for manufacturing of cathode
H01J 1/148 - Solid thermionic cathodes characterised by the material with compounds having metallic conductive properties, e.g. lanthanum boride, as an emissive material
A multiple-electron-beam irradiation apparatus includes a first electrostatic lens, configured using the substrate used as a bias electrode by being applied with a negative potential, a control electrode to which a control potential is applied and a ground electrode to which a ground potential is applied, configured to provide dynamic focusing of the multiple electron beams onto the substrate, in accordance with change of the height position of the surface of the substrate, by generating an electrostatic field, wherein the control electrode is disposed on an upstream side of a maximum magnetic field of the lens magnetic field of the first electromagnetic lens with respect to a direction of a trajectory central axis of the multiple electron beams, and a ground electrode is disposed on an upstream side of the control electrode with respect to the direction of the trajectory central axis.
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
H01J 37/145 - Combinations of electrostatic and magnetic lenses
H01J 37/30 - Electron-beam or ion-beam tubes for localised treatment of objects
H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
20.
Deflector for multiple electron beams and multiple beam image acquiring apparatus
A deflector for multiple electron beams includes a first electrode substrate, second to fourth electrode substrates disposed in order in parallel to each other in a first same plane which is orthogonal to the substrate surface of the first electrode substrate, a fifth electrode substrate disposed opposite to the first electrode substrate, and sixth to eighth electrode substrates disposed in order in parallel to each other in a second same plane such that they are opposite to the second to fourth electrode substrates, wherein the first to eighth electrode substrates are disposed such that they surround a space through which multiple electron beams pass.
H01J 37/04 - Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01J 37/28 - Electron or ion microscopesElectron- or ion-diffraction tubes with scanning beams
21.
Multiple electron beam irradiation apparatus, multiple electron beam inspection apparatus and multiple electron beam irradiation method
A multiple electron beam irradiation apparatus includes an electromagnetic lens configured to refract multiple electron beams incident, an aberration corrector arranged in the magnetic field of the electromagnetic lens and configured to be able to individually apply a bias potential and a deflection potential to each of the multiple electron beams, and an objective lens configured to focus the multiple electron beams, a trajectory of the each of which has been individually corrected by the bias potential and the deflection potential, onto a target object.
An individual beam detector for multiple beams includes a thin film in which a passage hole smaller than a pitch between beams of multiple beams and larger than the diameter of a beam is formed and through which the multiple beams can penetrate, a support base to support the thin film in which an opening is formed under the region including the passage hole, and the width size of the opening is formed to have a temperature of the periphery of the passage hole higher than an evaporation temperature of impurities adhering to the periphery in the case that the thin film is irradiated with the multiple beams, and a sensor arranged, at the position away from the thin film by a distance based on which a detection target beam having passed the passage hole can be detected by the sensor as a detection value with contrast discernible.
H01J 37/00 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
H01J 37/304 - Controlling tubes by information coming from the objects, e.g. correction signals
H01J 37/317 - Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/244 - DetectorsAssociated components or circuits therefor
23.
Method of reducing work function in carbon coated LaB6 cathodes
A method to reduce the work function of a carbon-coated lanthanum hexaboride (LaB6) cathode wherein the exposed tip of the cathode is exposed to moisture between two heat treatments is provided. The work function may be reduced by 0.01 eV or more.
H01J 1/148 - Solid thermionic cathodes characterised by the material with compounds having metallic conductive properties, e.g. lanthanum boride, as an emissive material
C30B 29/66 - Crystals of complex geometrical shape, e.g. tubes, cylinders
B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
H01J 9/04 - Manufacture of electrodes or electrode systems of thermionic cathodes
B05D 3/04 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
patents
