A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
Systems and methods for sensing objects are provided. A sensing apparatus can include a sensor comprising a photo-detecting unit configured to absorb (i) a first incident light having a first wavelength to generate a first detecting signal and (ii) a second incident light having a second wavelength to generate a second detecting signal. The sensing apparatus can further include a calculation circuit coupled to the sensor. The calculation circuit can be configured to output a calculating result according to the first detecting signal and the second detecting signal. The sensing apparatus can further include an adjustment circuit coupled to the calculation circuit. The adjustment circuit can be configured to perform an adjustment to one or more functionalities associated with the sensing apparatus according to the calculating result.
G01N 21/359 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using near infrared light
3.
Reconfigurable Optical Sensing Apparatus and Method Thereof
Systems, apparatuses, and methods for improved reconfigurable optical sensing are provided. For instance, an example optical sensing apparatus can include a photodetector array including a plurality of photodetectors. The optical sensing apparatus can include circuitry or one or more processing devices configured to receive one or more electrical signals representing an optical signal received by a first subset of the plurality of photodetectors; determine, based on the one or more electrical signals, a region of interest in the photodetector array for optical measurements; and deactivate, based on the region of interest, a second subset of the plurality of photodetectors of the photodetector array.
An optical sensing apparatus includes an optical signal receiving circuit configured to receive a photocurrent signal from an optoelectronic detector and generate a differential voltage signal. The optical signal receiving circuit includes a transimpedance amplifier coupled to the optoelectronic detector and configured to convert the photocurrent signal from the optoelectronic detector into a first voltage signal. The optical signal receiving circuit includes a first power source configured to provide a first bias voltage for the optoelectronic detector. The optical signal receiving circuit includes an adjustment circuit coupled to the transimpedance amplifier and configured to adjust the first voltage signal to generate a second voltage signal. The optical signal receiving circuit includes a single-ended-to-differential converter coupled to the adjustment circuit and configured to convert the second voltage signal into the differential voltage signal.
Methods, devices, and systems for optical sensing are provided. In one aspect, an optical sensing apparatus includes: a first absorption region configured to absorb light in at least a first spectrum with visible or near infrared wavelengths; a second absorption region formed over the first absorption region, the second absorption region configured to absorb light in at least a second spectrum with near infrared or shortwave infrared wavelengths; and a third absorption region formed over the second absorption region, the third absorption region configured to absorb light in at least a third spectrum with shortwave infrared or mid-wave infrared wavelengths.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
An optical sensor device for determining a hydration level information of an object includes a light-emitting element, a light-receiving element, and an analyzer. The light-emitting element is configured to emit a first light at a first wavelength and a second light at a second wavelength. The light-receiving element is configured to receive a first reflected light at the first wavelength and a second reflected light at the second wavelength from the object. The analyzer is configured to perform a hydration measurement to determine the hydration level information. The hydration level information is based on: a first reference signal strength at the first wavelength and a second reference signal strength at the second wavelength obtained from the light-receiving element when the object is not present; and a first signal strength of the first reflected light and a second signal strength of the second reflected light when the object is present.
G01N 21/3554 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content
A61B 5/00 - Measuring for diagnostic purposes Identification of persons
G01N 21/3563 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solidsPreparation of samples therefor
An optical sensor device for object detection includes a light-emitting element configured to emit light to the object, a light-receiving element configured to sense reflected light from the object, a temperature sensor configured to provide a temperature signal in response to an ambient temperature, a temperature compensation unit coupled to the temperature sensor to read the temperature signal and perform a temperature compensation process to generate a compensated signal strength, and an analyzer coupled to the temperature compensation unit and configured to receive the compensated signal strength and generate a detection result. The temperature compensation process includes receiving a first signal strength when the light-emitting element is turned off, receiving a second signal strength when the light-emitting element is activated, obtaining a compensation factor according to the temperature signal, and generating the compensated signal strength based on the first signal strength, the second signal strength, and the compensation factor.
Methods and systems for estimating a blood pressure of a user of a computing device are disclosed herein. The method can include obtaining at least one calibration trace, the at least one calibration trace being constructed to yield a fit between one or more selected reference traces and a corresponding parameter reference value for each of the one or more selected reference traces and obtaining a photoplethysmography (PPG) trace associated with a heartbeat cycle. The method can also include determining a convolution of the PPG trace with the at least one calibration trace, determining a blood pressure estimate for the user based on the convolution of the PPG trace with the at least one calibration trace, and providing data representing the blood pressure estimate.
Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for eye gesture recognition. In one aspect, a method includes obtaining an electrical signal that represents a measurement, by a photodetector, of an optical signal reflected from an eye and determining a depth map of the eye based on phase differences between the electrical signal generated by the photodetector and a reference signal. Further, the method includes determining gaze information that represents a gaze of the eye based on the depth map and providing output data representing the gaze information.
An optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material; an amplification region formed in the substrate and configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers; an interface-dopant region formed in the substrate between the absorption region and the amplification region; a buffer layer formed between the absorption region and the interface-dopant region; one or more field-control regions formed between the absorption region and the interface-dopant region and at least partially surrounding the buffer layer; and a buried-dopant region formed in the substrate and separated from the absorption region, where the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region.
H10F 30/225 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
H10F 77/14 - Shape of semiconductor bodiesShapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
A method for manufacturing one or more optical sensor packages includes forming a bonded wafer by bonding (i) a device wafer comprising a plurality of optical sensing pixels and (ii) a circuit wafer comprising application-specific-integrated-circuit configured to operate the optical sensing pixels, where the bonded wafer includes a device-wafer surface and a circuit-wafer surface. The method also includes forming a plurality of microlens arrays over the device-wafer surface, where each microlens of the microlens arrays corresponds to a particular optical sensing pixel. The method also includes forming a plurality of module-lens structures over the plurality of microlens arrays, where each module-lens structure corresponds to a particular microlens array of the plurality of microlens arrays. The method also includes forming electrical contacts over the circuit-wafer surface to establish electrical connections to the plurality of optical sensing pixels and the application-specific-integrated-circuit.
A method for obtaining a heart rate value by an optical sensing apparatus includes: receiving, by a first calculator in a processor and from a light receiver, a PPG signal; receiving, by a second calculator in the processor and from a motion sensor, a motion signal; determining, by the first calculator, a first heart rate value; determining, by the first calculator, a validity indicator according to the PPG signal; and determining, by the second calculator, a second heart rate value according to the PPG signal and the motion signal. When the validity indicator is determined to satisfy a predetermined requirement, the processor outputs the first heart rate value as the heart rate value. When the validity indicator is determined to not satisfy the predetermined requirement, the processor outputs the second heart rate value as the heart rate value.
A connector module capable of transmitting display data signals includes first and second light-emitting devices, a module connector including first and second terminals, and first and second optical transceivers respectively including at least one electrical-optical converting circuit and at least one optical-electrical converting circuit. One of the at least one electrical-optical converting circuit of the first optical transceiver is electrically coupled to the first light-emitting device and the first terminal, and one of the at least one electrical-optical converting circuit of the second optical transceiver is electrically coupled to the second light-emitting device and the second terminal. A portion of the at least one optical-electrical converting circuit of the first optical transceiver is electrically isolated to any optoelectronic device and the module connector. The at least one optical-electrical converting circuit of the second optical transceiver is electrically isolated to any optoelectronic device and the module connector.
An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
An optical sensor device and related methods are presented. For example, an optical sensor device can include a substrate, a light-receiving element including a first absorption region, and disposed on and electrically connected to the substrate, and a first light-emitting element disposed on and electrically connected to the substrate. The optical sensor device can include an encapsulating structure disposed over the substrate, and encapsulating the light-emitting element and the light-receiving element. The optical sensor device can include a shielding structure disposed over the encapsulating structure, including a first opening located over the first light-emitting element, and a second opening located over the light-receiving element. The first absorption region can include a non-shielded portion exposed to an optical signal under the second opening of the shielding structure and a shielded portion shielded from the optical signal by the shielding structure.
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
16.
Multi-Application Optical Sensing Apparatus and Method Thereof
Systems, apparatuses, and methods for multi-application optical sensing are provided. For example, an optical sensing apparatus can include a photodetector array, a first circuitry, and a second circuitry. The photodetector array includes a plurality of photodetectors, wherein a first subset of the plurality of photodetectors are configured as a first region for detecting a first optical signal, and a second subset of the plurality of photodetectors are configured as a second region for detecting a second optical signal. The first circuitry, coupled to the first region, is configured to perform a first function based on the first optical signal to output a first output result. The second circuitry, coupled to the second region, is configured to perform a second function based on the second optical signal to output a second output result.
An optical detector module can be used to implement proximity sensing function by detecting ambient light outside of the optical detector module in accordance with a first detection threshold. An optical detector module can be further used to implement other active functions such as material detection (e.g., skin) or depth-sensing by emitting one or more optical signals (e.g., light pulses at a specific wavelength) and detecting the reflected optical signals relative to a second and/or third detection threshold. The disclosure provides technical solutions for actively monitoring detection threshold(s) of an optical detector module to achieve better power management. In some embodiments, such solutions are useful for photodetectors having a wide sensing bandwidth, such as a photodetector formed in germanium or a photodetector comprising an absorption region comprising germanium.
Apparatuses for optical and image sensing are disclosed herein. The optical sensing apparatus can include a first and a second signal wire. The optical sensing apparatus can include N photodetectors arranged in an array, connected to the first signal wire and a second input terminal connected to the second signal wire. The optical sensing apparatus can include a modulation circuit configured to generate a modulated signal including a source transistor pair, a sink transistor pair, and a second sink transistor wherein a first photodetector of the N photodetectors is arranged between the source transistor pair and an Nth photodetector of the N photodetectors, and the Nth photodetector of the N photodetectors is arranged between the sink transistor pair and the first photodetector of the N photodetectors.
An optical sensing apparatus includes a first photo-detecting layer having a first absorption region configured to absorb light in at least a visible spectrum; a second photo-detecting layer formed over the first photo-detecting layer, the second photo-detecting layer having a second absorption region configured to absorb light in at least a mid-infrared spectrum; a first buffer layer formed over the second photo-detecting layer; and a second buffer layer formed over the first photo-detecting layer and under the second photo-detecting layer.
H01L 31/101 - Devices sensitive to infrared, visible or ultraviolet radiation
H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
20.
System and Method for Optical Sensor Measurement Control
Methods for determining a signal quality index for bioinformation measurement are disclosed herein. The method can include detecting a light intensity when the transmitter module is in an off state. The method can include comparing the light intensity to a first threshold. The method can include decreasing the gain of the receiver module when the light intensity is greater than the first threshold. The method can include comparing the light intensity to a second threshold when the light intensity is less than the first threshold. The method can include decreasing the gain of the receiver module when the light intensity is greater than the second threshold. The method can include comparing the light intensity to a third threshold when the light intensity is less than the second threshold. The method can include increasing the gain of the receiver module when the light intensity is less than the third threshold.
Apparatuses and methods for calculating heart rate are disclosed herein. The apparatus can include a processor configured to calculate heart rate information. The processor includes a heart rate calculator including a memory configured to store a PPG signal and a calculation element coupled to the memory and configured to calculate a heart rate value and generate at least one quality checking factor according to the PPG signal. The processor also includes a checking element configured to determine a validity indicator according to the at least one quality checking factor, a memory control element coupled to the memory and configured to access the memory to transmit the PPG signal, and a multiplexer configured to output the PPG signal accessed by the memory control element or the heart rate value calculated by the calculation element according to the validity indicator.
Methods and apparatuses for detecting an object are described herein. The apparatus includes a light receiver configured to receive at least two lights with a first wavelength and a second wavelength. The apparatus also includes a memory configured to store a plurality of adjusting parameters, and a processor configured to compare a first reference light intensity at the first wavelength and a second reference light intensity at the second wavelength without a presence of the object to obtain a condition index, access a corresponding adjusting parameter from the memory according to the condition index for adjusting a threshold, and compare a reflected light intensity reflected from the object with the adjusted threshold to determine a detection information.
Systems, apparatuses, and methods for optical sensing are provided. For example, an optical sensing apparatus can include a substrate, a light-receiving device, a light-emitting device, an encapsulating structure, a covering cap, and an adhesive layer. The light-receiving device and the light-emitting device can be disposed on and electrically connected to the substrate. The encapsulating structure can be disposed on the substrate and cover the light-emitting device and the light-receiving device. The encapsulating structure can include a top surface, a first side surface, and a lower surface. The first side surface and the lower surface can collectively form a recess. The covering cap can be disposed on the encapsulating structure and can include a first opening, a top portion, a protruding portion, and an extending portion. The adhesive layer can be arranged between the encapsulating structure and the covering cap to adhere the encapsulating structure and the covering cap.
H01L 31/12 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for eye gesture recognition. In one aspect, a method includes obtaining an electrical signal that represents a measurement, by a photodetector, of an optical signal reflected from an eye and determining a depth map of the eye based on phase differences between the electrical signal generated by the photodetector and a reference signal. Further, the method includes determining gaze information that represents a gaze of the eye based on the depth map and providing output data representing the gaze information.
A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect layer on the germanium-silicon layer, wherein the interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes; defining integrated circuitry for controlling the pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and bonding the first interconnect layer with the second interconnect layer.
H01L 31/0312 - Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
H01L 31/09 - Devices sensitive to infrared, visible or ultra- violet radiation
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.
G01S 7/4863 - Detector arrays, e.g. charge-transfer gates
G01S 17/10 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
An optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material; an amplification region formed in the substrate and configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers; an interface-dopant region formed in the substrate between the absorption region and the amplification region; a buffer layer formed between the absorption region and the interface-dopant region; one or more field-control regions formed between the absorption region and the interface-dopant region and at least partially surrounding the buffer layer; and a buried-dopant region formed in the substrate and separated from the absorption region, where the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.
H04N 1/193 - Simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0376 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
H01L 31/102 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
H01L 31/075 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
H01L 31/109 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
Methods and devices for a display apparatus. In one aspect, a display apparatus includes a display device including a transparent layer, a display integrated circuit layer including one or more display control circuits, and a shielding layer between the transparent layer and the display integrated circuit layer, a near-infrared (NIR) light source and a visible light source, and a detector device including a detector integrated circuit layer including one or more detector control circuits, where a surface of the detector device contacts a surface of the display device, and a photodetector electrically coupled to at least one detector control circuit and including a detection region positioned to receive NIR light propagating from a front side of the display device to a back side of the display device along a path, where the shielding layer includes a filter region positioned in the path.
A photodetecting device is provided. The photodetecting device includes a silicon substrate, a germanium absorption region, and a plurality of microstructures. The silicon substrate includes a first surface and a second surface. The germanium absorption region is formed proximal to the first surface of the silicon substrate, and the germanium absorption region is configured to absorb photons and to generate photo-carriers. The plurality of microstructures are formed over the second surface of the silicon substrate, and the plurality of microstructures are configured to direct an optical signal towards the germanium absorption region. A system including an optical transmitter and an optical receiver is also provided.
A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
Methods and devices for an avalanche photo-transistor. In one aspect, an avalanche photo-transistor includes a detection region configured to absorb light incident on a first surface of the detection region and generate one or more charge carriers in response, a first terminal in electrical contact with the detection region and configured to bias the detection region, an interim doping region, a second terminal in electrical contact with the interim doping region and configured to bias the interim doping region, a multiplication region configured to receive the one or more charge carriers flowing from the interim doping region and generate one or more additional charge carriers in response, a third terminal in electrical contact with the multiplication region and configured to bias the multiplication region, wherein the interim doping region is located in between the detection region and the multiplication region.
H01L 31/11 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
An optical sensor includes a plurality of detectors arranged in an array. Each detector of the plurality of detectors includes one or more absorption regions configured to receive an optical signal and generate charge carriers in response to receiving the optical signal; one or more readout regions configured to collect a portion of the charge carriers for output; and one or more control regions coupled to one or more control signals, the one or more control regions configured to control, in response to the one or more control signals, a flow of charge carriers from the one or more absorption regions to the one or more readout regions. The optical sensor includes driver circuitry configured to provide the control signals to enable or disable a subset of the plurality of detectors based on an operating mode of multiple operating modes.
−3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
G01S 17/26 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein the transmitted pulses use a frequency-modulated or phase-modulated carrier wave, e.g. for pulse compression of received signals
A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.
G01S 7/4863 - Detector arrays, e.g. charge-transfer gates
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
G01S 7/4914 - Detector arrays, e.g. charge-transfer gates
G01S 17/36 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
36.
Multi-application optical sensing apparatus and method thereof
Systems, apparatuses, and methods for multi-application optical sensing are provided. For example, an optical sensing apparatus can include a photodetector array, a first circuitry, and a second circuitry. The photodetector array includes a plurality of photodetectors, wherein a first subset of the plurality of photodetectors are configured as a first region for detecting a first optical signal, and a second subset of the plurality of photodetectors are configured as a second region for detecting a second optical signal. The first circuitry, coupled to the first region, is configured to perform a first function based on the first optical signal to output a first output result. The second circuitry, coupled to the second region, is configured to perform a second function based on the second optical signal to output a second output result.
A photodetecting device includes a substrate, an array of sub-pixels, and a lens array covering the array of sub-pixels. Each sub-pixel includes a photosensitive layer supported by the substrate, the photosensitive layer being configured to absorb photons and generate photo-carriers, a first doped portion formed in the photosensitive layer of the respective sub-pixel, wherein the first doped portion includes dopants with a first conductivity type; and a second doped portion formed in the substrate, wherein the second doped portion includes dopants with a second conductivity type different from the first conductivity type. The array further includes an isolation region separating two or more sub-pixels of the array, a routing layer formed on the substrate configured to electrically couple a circuit to multiple sub-pixels of the array. The lens array includes a spacer portion and a plurality of lenses arranged in a one-to-one correspondence with each of the sub-pixels.
H01L 31/113 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor
H04B 10/69 - Electrical arrangements in the receiver
An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.
G01S 7/4863 - Detector arrays, e.g. charge-transfer gates
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01S 17/10 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
39.
Wafer-level device measurement for optical sensors
A wafer includes a plurality of testing dies, a plurality of non-testing dies, and a dicing region. Each testing die includes: a first active area including one or more first active devices, and one or more first device pads electrically coupled to the one or more first active devices. Each non-testing die includes: a second active area including one or more second active devices, and one or more second device pads electrically coupled to the one or more second active devices. The dicing region includes one or more testing pads electrically coupled to the one or more first device pads. The one or more testing pads are arranged to receive one or more external probes for determining one or more characteristics of the one or more first active devices of the plurality of testing dies. The plurality of non-testing dies are electrically isolated from the dicing region.
Image processing apparatus and image processing method are provided. The image processing apparatus may include an image sensor having a plurality of photodetectors and include a 3D image calculating module. The image sensor may be configured to generate a first set of input information at a first time/first location and a second set of input information at a second time/second location, where the first set of input information may be associated with a first weighting value, and the second set of input information may be associated with a second weighting value. The 3D image calculating module may be configured to generate output information based on the first and the second sets of input information and the first and the second weighting values, wherein at least one of the plurality of photodetectors includes germanium.
An optical sensing apparatus is provided. The optical sensing apparatus includes a substrate, one or more pixels supported by the substrate, where each of the one or more pixels includes an absorption region, a field control region, a first contact region, a second contact region and a carrier confining region. The field control region and the first contact region are doped with a dopant of a first conductivity type. The second contact region is doped with a dopant of a second conductivity type. The carrier confining region includes a first barrier region and a channel region, where the first barrier region is doped with a dopant of the second conductivity type and has a first peak doping concentration, and where the channel region is intrinsic or doped with a dopant of the second conductivity type and has a second peak doping concentration lower than the first peak doping concentration.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/112 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor
An optical sensing apparatus is provided. The optical sensing apparatus including: a substrate including a first material; an absorption region including a second material different from the first material, the absorption region configured to receive an optical signal and generate photo-carriers in response to receiving the optical signal; an amplification region formed in the substrate configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers carriers; a buried-dopant region formed in the substrate and separated from the absorption region, wherein the buried-dopant region is configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region; and a buffer layer formed between the buried-dopant region and the absorption region, wherein the buffer layer is intrinsic and has a thickness not less than 150 nm.
H01L 31/14 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
43.
Optical detector module and a method for operating the same
An optical detector module can be used to implement proximity sensing function by detecting ambient light outside of the optical detector module in accordance with a first detection threshold. An optical detector module can be further used to implement other active functions such as material detection (e.g., skin) or depth-sensing by emitting one or more optical signals (e.g., light pulses at a specific wavelength) and detecting the reflected optical signals relative to a second and/or third detection threshold. The disclosure provides technical solutions for actively monitoring detection threshold(s) of an optical detector module to achieve better power management. In some embodiments, such solutions are useful for photodetectors having a wide sensing bandwidth, such as a photodetector formed in germanium or a photodetector comprising an absorption region comprising germanium.
Methods and devices for a display apparatus. In one aspect, a display apparatus includes a display device including a transparent layer, a display integrated circuit layer including one or more display control circuits, and a shielding layer between the transparent layer and the display integrated circuit layer, a near-infrared (NIR) light source and a visible light source, and a detector device including a detector integrated circuit layer including one or more detector control circuits, where a surface of the detector device contacts a surface of the display device, and a photodetector electrically coupled to at least one detector control circuit and including a detection region positioned to receive NIR light propagating from a front side of the display device to a back side of the display device along a path, where the shielding layer includes a filter region positioned in the path.
Methods, devices, apparatus, and systems for photo-detecting are provided. In one aspect, a photo-detecting apparatus includes: a pixel having an absorption region configured to receive an optical signal and to generate photo-carriers in response to the optical signal, a substrate supporting the absorption region, and at least one additional region formed in the substrate. The absorption region includes a first material, the substrate includes a second material different from the first material. The at least one additional region includes a third material different from the second material. A total area of the absorption region and the at least one additional region is at least 20% of an area of the pixel.
Methods, devices, apparatus, and systems for photo-detecting are provided. The photo-detecting apparatus includes a substrate, an absorption region supported by the substrate and configured to receive an optical signal and generate photo-carriers in response to the optical signal, and multiple sets of a switch including a first set and a second set. The substrate includes a first material, and the absorption region includes a second material. The absorption region is arranged in between the first set and the second set. Each of the multiple sets includes a respective control region and a respective readout region. The respective control regions of the multiple sets of the switch are configured to receive a control signal, and the respective readout regions of the multiple sets of the switch are configured to provide one or more electrical signals representing first collective information for deriving time-of-flight information associated with the optical signal.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
H04N 25/705 - Pixels for depth measurement, e.g. RGBZ
Systems and methods for optical communication are provided. For instance, a method for optical communication can include receiving, by a first coupling module, a power-on signal from a first electronic device coupled to the first coupling module. The method can also include relaying, by the first coupling module, a first optical signal to a second coupling module coupled to a second electronic device. The method can also include relaying, by the second coupling module, in response to receipt of the first optical signal, a second optical signal to the first coupling module. The method can also include activating, by the first coupling module, in response to receipt of the second optical signal, a data transfer circuit for relaying data via an optical communication interface between the first coupling module and the second coupling module.
An optical sensing apparatus is provided. The optical sensing apparatus includes a semiconductor substrate composed of a first material; a transmitter-receiver set supported by the semiconductor substrate and including: (1) a photodetector includes an absorption region composed of a second material including germanium and configured to receive an optical signal and to generate photo-carriers in response to the optical signal; and (2) a light source including a light-emitting region composed of a third material including germanium and configured to emit a light toward a target; wherein the absorption region includes at least a property different from a property of the light-emitting region, wherein the property includes strain, conductivity type, peak doping concentration, or a ratio of the peak doping concentration to a peak doping concentration of the semiconductor substrate; wherein the first material is different from the second material and the third material.
H01L 31/173 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
A photo-detecting apparatus includes an absorption layer configured to absorb photons and to generate photo-carriers from the absorbed photons, wherein the absorption layer includes germanium. A carrier guiding unit is electrically coupled to the absorption layer, wherein the carrier guiding unit includes a first switch including a first gate terminal.
Systems and methods for sensing objects are provided. An optical apparatus can include a transmitter configured to project on a surface of an object, a first optical pattern having a first set of characteristics and a second optical pattern having a second set of characteristics. The optical apparatus can include a receiver configured to receive first and second reflected optical patterns representing a reflection of the first optical pattern and the second optical pattern from the surface of the object, and generate first and second electrical signals representing the first and the second reflected optical patterns. The optical apparatus can include one or more processors configured to receive the first electrical signals and the second electrical signals, and determine one or more characteristics of the object, including range information of the object.
A light emission system including a first sub-system. The first sub-system includes a storage inductor having a first inductor terminal coupled to a voltage source and a second inductor terminal; a storage capacitor having a first capacitor terminal coupled to the first terminal of the storage inductor, and a second capacitor terminal coupled to a reference voltage node; a switch having a control terminal coupled to a driver circuitry that sends a modulation signal to open or close the switch, a first channel terminal coupled to the second inductor terminal, and a second channel terminal coupled to the reference voltage node; and a load having N laser diodes coupled in series, where the N laser diodes include a first laser diode having a terminal coupled to the second inductor terminal, and an N-th laser diode having a terminal coupled to the reference voltage node.
H01S 5/062 - Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.
H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
Systems, apparatuses, and methods for multi-application optical sensing are provided. For example, an optical sensing apparatus can include a photodetector array, a first circuitry, and a second circuitry. The photodetector array includes a plurality of photodetectors, wherein a first subset of the plurality of photodetectors are configured as a first region for detecting a first optical signal, and a second subset of the plurality of photodetectors are configured as a second region for detecting a second optical signal. The first circuitry, coupled to the first region, is configured to perform a first function based on the first optical signal to output a first output result. The second circuitry, coupled to the second region, is configured to perform a second function based on the second optical signal to output a second output result.
Systems, apparatuses, and methods for improved reconfigurable optical sensing are provided. For instance, an example optical sensing apparatus can include a photodetector array including a plurality of photodetectors. The optical sensing apparatus can include circuitry or one or more processing devices configured to receive one or more electrical signals representing an optical signal received by a first subset of the plurality of photodetectors; determine, based on the one or more electrical signals, a region of interest in the photodetector array for optical measurements; and deactivate, based on the region of interest, a second subset of the plurality of photodetectors of the photodetector array.
A photodetecting device is provided. The photodetecting device includes a first photodetecting component including a substrate having a first absorption region configured to absorb photons having a first peak wavelength and to generate first photo-carriers, and a second photodetecting component including a second absorption region configured to absorb photons having a second peak wavelength different from the first peak wavelength and to generate second photo-carriers. The first photodetecting component further includes two first readout circuits and two first control circuits for the first photo-carriers and electrically coupled to the first absorption region. The second photodetecting component further includes two second readout circuits and two second control circuits for the second photo-carriers and electrically coupled to the second absorption region, wherein the two second readout circuits are separated from the two first readout circuits, and the two second control circuits are separated from the two first control circuit.
Systems and methods improving three-dimensional sensor measurement accuracy are provided. For instance, an example apparatus can include a distance-estimation system, a distance-refinement system, and a processing system. The distance-estimation system can be configured to receive a first optical signal and determine a first distance between two points in an environment. The distance-refinement system can be configured to receive a second optical signal and determine a second distance between the two points in the environment. The processing system can be configured to receive information representing the first distance and the second distance and determine, based on the first distance and the second distance, a third distance between the two points in the environment. The difference between a true distance of the two points in the environment and the first distance can be larger than a difference between the true distance of the two points in the environment and the third distance.
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
G01B 11/03 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness by measuring coordinates of points
Systems and methods for optical communication are provided. For instance, a method for optical communication can include receiving, by a first coupling module, a power-on signal from a first electronic device coupled to the first coupling module. The method can also include relaying, by the first coupling module, a first optical signal to a second coupling module coupled to a second electronic device. The method can also include relaying, by the second coupling module, in response to receipt of the first optical signal, a second optical signal to the first coupling module. The method can also include activating, by the first coupling module, in response to receipt of the second optical signal, a data transfer circuit for relaying data via an optical communication interface between the first coupling module and the second coupling module.
Methods and devices for a display apparatus. In one aspect, a display apparatus includes a display device including a transparent layer, a display integrated circuit layer including one or more display control circuits, and a shielding layer between the transparent layer and the display integrated circuit layer, a near-infrared (NIR) light source and a visible light source, and a detector device including a detector integrated circuit layer including one or more detector control circuits, where a surface of the detector device contacts a surface of the display device, and a photodetector electrically coupled to at least one detector control circuit and including a detection region positioned to receive NIR light propagating from a front side of the display device to a back side of the display device along a path, where the shielding layer includes a filter region positioned in the path.
An optical sensing apparatus includes an absorption region configured to receive an optical signal and to generate, in response to the optical signal, photo-generated electrons and photo-generated holes, a carrier steerer, and circuitry electrically coupled to the carrier steerer and a controller. The carrier steerer includes a first p-doped region, a first n-doped region electrically shorted with the first p-doped region, a first gate configured to control a flow of holes from the absorption region to the first p-doped region, and a second gate configured to control a flow of electrons from the absorption region to the first n-doped region. The circuitry is configured receive electrical signals from the controller to synchronize operation of the first and second gates so that during a first time period holes flow from the absorption region to the first p-doped region while electrons do not flow from the absorption region to the first n-doped region and during a second time period electrons flow from the absorption region to the first n-doped region while holes do not flow from the absorption region to the first p-doped region.
A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
Systems and methods for sensing objects are provided. A sensing apparatus can include a sensor comprising a photo-detecting unit configured to absorb (i) a first incident light having a first wavelength to generate a first detecting signal and (ii) a second incident light having a second wavelength to generate a second detecting signal. The sensing apparatus can further include a calculation circuit coupled to the sensor. The calculation circuit can be configured to output a calculating result according to the first detecting signal and the second detecting signal. The sensing apparatus can further include an adjustment circuit coupled to the calculation circuit. The adjustment circuit can be configured to perform an adjustment to one or more functionalities associated with the sensing apparatus according to the calculating result.
G01N 21/359 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using near infrared light
62.
Light-sensing apparatus and light-sensing method thereof
−3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01S 17/26 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein the transmitted pulses use a frequency-modulated or phase-modulated carrier wave, e.g. for pulse compression of received signals
Described are systems and methods for ToF imaging of a target. The ToF imaging system includes an optical splitter that splits the light beam from a light source into multiple transmitting light beams. The transmitting light beams are directed towards a target, and one or more portions return as reflected light beams. A detector generates detector signals, representative of the reflected light beams. An electronically-controlled mirror is used to change the angular position of the transmitting light beams incident on the target, so that different regions of the target can be measured at different time instants. The ToF imaging system uses a flash and scan process to flash one region(s) of the target with the transmitting light beams during one sub-frame exposure and to scan other region(s) of the target during subsequent sub-frame exposures. An image processing apparatus constructs target information from multiple sub-frame exposure.
A HDMI apparatus is provided. The HDMI apparatus includes a first audio/video transceiver (A/V transceiver) configured to transmit an optical A/V signal to a second A/V transceiver; and a first sideband transceiver configured to drive a first laser diode to transmit a first optical sideband signal including a first control information or a first power information; wherein the first control information or the first power information is converted by a first Serializer/Deserializer (SERDES).
An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01S 17/10 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
A light emission apparatus includes a laser diode configured to emit a light; a laser driver electrically coupled to the laser diode, the laser driver being configured to drive the laser diode to generate the light; and an optical module arranged to receive the light emitted by the laser diode, the optical module comprising at least one optical element and being configured to adjust the light and emits a transmitting light; wherein the transmitting light emits from the optical module with an illumination angle and the optical module adjusts the light to vary the illumination angle.
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
H01S 5/32 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures
Methods and devices for a display apparatus. In one aspect, a display apparatus includes a display device including a transparent layer, a display integrated circuit layer including one or more display control circuits, and a shielding layer between the transparent layer and the display integrated circuit layer, a near-infrared (NIR) light source and a visible light source, and a detector device including a detector integrated circuit layer including one or more detector control circuits, where a surface of the detector device contacts a surface of the display device, and a photodetector electrically coupled to at least one detector control circuit and including a detection region positioned to receive NIR light propagating from a front side of the display device to a back side of the display device along a path, where the shielding layer includes a filter region positioned in the path.
Introduced here are techniques for implementing a clock and data recovery circuit with improved tendencies, such a pull up and/or pull down tendencies. In various embodiments, the CDR circuit includes a phase detector that receives an input signal and a output reference clock signal. The phase detector then outputs two signals to charge pump. The output from the charge pump drives an oscillator control voltage up or down depending the current from the charge pump. A lock detector detects whether a lock has occurred by comparing the oscillator control voltage to a predetermined threshold voltage. A lock can occur when the circuit has settled into a frequency substantially near the frequency of the input signal and the oscillator control voltage is substantially near the threshold voltage. A controller circuit can control a sweeping of an available frequency range by the circuit until a lock occurs.
H03D 3/24 - Modifications of demodulators to reject or remove amplitude variations by means of locked-in oscillator circuits
H03L 7/089 - Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal the phase or frequency detector generating up-down pulses
H04L 7/033 - Speed or phase control by the received code signals, the signals containing no special synchronisation information using the transitions of the received signal to control the phase of the synchronising-signal- generating means, e.g. using a phase-locked loop
An optical apparatus includes: a substrate having a first material; an absorption region having a second material different from the first material, the absorption region configured to absorb photons and to generate photo-carriers including electrons and holes in response to the absorbed photons; a first well region surrounding the absorption region and arranged between the absorption region and the substrate, the first well region being doped with a first polarity; and one or more switches each controlled by a respective control signal, the one or more switches each configured to collect at least a portion of the photo-carriers based on the respective control signal and to provide the portion of the photo-carriers to a respective readout circuit.
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
G01S 17/36 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
G01S 7/4914 - Detector arrays, e.g. charge-transfer gates
H01L 31/11 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
G01S 17/42 - Simultaneous measurement of distance and other coordinates
A light emission apparatus includes a transistor comprising a control terminal, a first channel terminal, and a second channel terminal, wherein the control terminal is configured to receive a modulation signal, the first channel terminal is configured to generate a driving signal according to the modulation signal, and the second channel terminal is coupled to a fixed voltage; and a load comprising: a first terminal; a second terminal, wherein the first terminal is coupled to the first channel terminal of the transistor and the second terminal is coupled to the fixed voltage; a laser diode configured to emit a light according to the driving signal; and a first capacitor coupled to the laser diode, configured to isolate a DC current on the first terminal of the transistor.
An interface circuitry includes an interface, a transmitter module and a receiver module. The transmitter module includes an input stage, a driving circuit and a regulator circuit. The input stage is powered by a regulated voltage and configured to receive an input signal and generate a first output signal and a second output signal. The driving circuit is configured to drive the interface according to the first output signal and the second output signal and to provide a first data signal, a second data signal and a driving signal. The regulator circuit is coupled between the input stage and the driving circuit, and configured to provide the supply voltage according to the driving current.
G05F 1/56 - Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
A photo-detecting apparatus includes an image sensor and a 3D image generator. The image sensor having a plurality of 3D photodetectors is configured to output a raw data. The 3D image generator having a storage medium for storing a calibration data is configured to output a 3D image according to the raw data and the calibration data. The calibration data includes at least one of an IQ-mismatch calibration data, a non-linearity calibration data, a temperature calibration data and an offset calibration data.
A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.
H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/0288 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
In a power switching apparatus, a first switch includes a first end coupled to a first input terminal, a second end coupled to an output terminal, and a control end coupled to a second input terminal and coupled to a ground via a first resistor. A second resistor is coupled between the output terminal and the ground. A second switch includes a first end coupled to the second input terminal, a second end coupled to the output terminal and a control end coupled to the ground via a third resistor. A third switch includes a first end coupled to the control end of the second switch and the first end of the third resistor, a second end coupled to the first input terminal and a control end coupled to the second input terminal and coupled to the ground via the first resistor.
H03B 1/00 - GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNERGENERATION OF NOISE BY SUCH CIRCUITS Details
H03K 3/00 - Circuits for generating electric pulsesMonostable, bistable or multistable circuits
H03K 3/01 - Circuits for generating electric pulsesMonostable, bistable or multistable circuits Details
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
A photo-current amplification apparatus is provided. The photo-current amplification apparatus includes a photo-detecting device including: a substrate; an absorption region comprising germanium, the absorption region supported by the substrate and configured to receive an optical signal and to generate a first electrical signal based on the optical signal; an emitter contact region of a conductivity type; and a collector contact region of the conductivity type, wherein at least one of the emitter contact region or the collector contact region is formed outside the absorption region, and wherein a second electrical signal collected by the collector contact region is greater than the first electrical signal generated by the absorption region.
H03F 3/08 - Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Methods and devices for an avalanche photo-transistor. In one aspect, an avalanche photo-transistor includes a detection region configured to absorb light incident on a first surface of the detection region and generate one or more charge carriers in response, a first terminal in electrical contact with the detection region and configured to bias the detection region, an interim doping region, a second terminal in electrical contact with the interim doping region and configured to bias the interim doping region, a multiplication region configured to receive the one or more charge carriers flowing from the interim doping region and generate one or more additional charge carriers in response, a third terminal in electrical contact with the multiplication region and configured to bias the multiplication region, wherein the interim doping region is located in between the detection region and the multiplication region.
H01L 31/11 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
A photo-detecting apparatus includes an absorption layer configured to absorb photons and to generate photo-carriers from the absorbed photons, wherein the absorption layer includes germanium. A carrier guiding unit is electrically coupled to the absorption layer, wherein the carrier guiding unit includes a first switch including a first gate terminal.
Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for eye gesture recognition. In one aspect, a method includes obtaining an electrical signal that represents a measurement, by a photodetector, of an optical signal reflected from an eye and determining a depth map of the eye based on phase differences between the electrical signal generated by the photodetector and a reference signal. Further, the method includes determining gaze information that represents a gaze of the eye based on the depth map and providing output data representing the gaze information.
A photo-detecting apparatus includes a first photodetector, a second photodetector, a first modulation signal generating circuit and a second modulation signal generating circuit. The first is configured to generate at least a first detecting signal according a first modulation signal. The second photodetector is configured to generate a second detecting signal according a second modulation signal. The first modulation signal generating circuit is coupled to the first photodetector and operated between a first voltage and a second voltage, and is configured to generate the first modulation signal. The second modulation signal generating circuit is coupled to the second photodetector and operated between the second voltage and a third voltage. The second modulation signal generating circuit is configured to generate a second modulation signal. The value of the second voltage is between the first voltage and the third voltage.
A photo-detecting apparatus is provided. The photo-detecting apparatus includes at least one pixel, and each pixel includes N subpixels, wherein each of the subpixels comprises a detection region, two first conductive contacts, wherein the detection region is between the two first conductive contacts, wherein N is a positive integer and is ≥2.
A laser driving apparatus includes a driver, a tracking circuit, a comparator and a control circuit. The driver includes a laser driving circuit, and the tracking circuit includes a reference current source and a replica circuit. The laser driving circuit generates a driving current to drive a laser. The reference current source generates a reference current as a reference for the laser driving apparatus. The replica circuit corresponds to at least a portion of the laser driving circuit, generates a sensing current according to the reference current and track the driving current. The comparator compares voltages respectively on the laser driving circuit and the replica circuit to generate a comparison signal. The control circuit adjusts the sensing current or the driving current according to the comparison signal. The laser driving apparatus can include multiple channels with multiple drivers.
An optoelectronic device is provided. The optoelectronic device includes a photodetector including a light-absorption region, 2N control contact layers electrically coupled to the light-absorption region, and 2N readout contact layers electrically coupled to the light-absorption region, wherein N is a positive integer larger than or equal to 2.
A HDMI apparatus is provided. The HDMI apparatus includes a first audio/video transceiver (A/V transceiver) configured to transmit an optical A/V signal to a second A/V transceiver; and a first sideband transceiver configured to drive a first laser diode to transmit a first optical sideband signal including a first control information or a first power information; wherein the first control information or the first power information is converted by a first Serializer/Deserializer (SERDES).
A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect layer on the germanium-silicon layer, wherein the interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes; defining integrated circuitry for controlling the pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and bonding the first interconnect layer with the second interconnect layer.
H01L 31/0312 - Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
H01L 31/09 - Devices sensitive to infrared, visible or ultra- violet radiation
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
86.
Light-sensing apparatus and light-sensing method thereof
−3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G01S 17/26 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein the transmitted pulses use a frequency-modulated or phase-modulated carrier wave, e.g. for pulse compression of received signals
Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
88.
High resolution 3D image processing apparatus and method thereof
Image processing apparatus and image processing method are provided. The image processing apparatus may include an image sensor having a plurality of photodetectors and include a 3D image calculating module. The image sensor may be configured to generate a first set of input information at a first time/first location and a second set of input information at a second time/second location, where the first set of input information may be associated with a first weighting value, and the second set of input information may be associated with a second weighting value. The 3D image calculating module may be configured to generate output information based on the first and the second sets of input information and the first and the second weighting values, wherein at least one of the plurality of photodetectors includes germanium.
An apparatus including a semiconductor substrate; an absorption layer coupled to the semiconductor substrate, the absorption layer including a photodiode region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, where the second control signal is different from the first control signal.
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
90.
Photodetecting device for detecting different wavelengths
A photodetecting device for detecting different wavelengths includes a first photodetecting component including a substrate and a second photodetecting component including second absorption region. The substrate includes a first absorption region configured to absorb photons having a first peak wavelength and to generate first photo-carriers. The second absorption region is supported by the substrate and configured to absorb photons having a second peak wavelength and to generate second photo-carriers. The first absorption region and the second absorption region are overlapped along a vertical direction.
A semiconductor device includes a germanium region, a doped region in the germanium region, wherein the doped region is of a first conductivity type; and a counter-doped region in the germanium region and adjacent to the doped region, wherein the counter-doped region is of a second conductivity type different from the first conductivity type.
H01L 29/167 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form further characterised by the doping material
A method for fabricating an optical sensor includes: forming, over a substrate, a first material layer comprising a first alloy of germanium and silicon having a first germanium composition; forming, over the first material layer, a graded material layer comprising germanium and silicon; and forming, over the graded material layer, a second material layer comprising a second alloy of germanium and silicon having a second germanium composition. The first germanium composition is lower than the second germanium composition and a germanium composition of the graded material layer is between the first germanium composition and the second germanium composition and varies along a direction perpendicular to the substrate.
A photo-detecting apparatus includes an optical-to-electric converter, having a first output terminal, configured to convert an incident light to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal and a second channel terminal, wherein the second channel terminal of the cascode transistor is coupled to the first output terminal of the optical-to-electric converter; and a reset transistor, having a control terminal, a first channel terminal and a second channel terminal, wherein the first channel terminal of the reset transistor is coupled to a supply voltage and the second channel terminal of the reset transistor is coupled to the first channel terminal of the cascode transistor.
G02B 6/35 - Optical coupling means having switching means
G02B 6/42 - Coupling light guides with opto-electronic elements
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
94.
Photodetecting device with enhanced collection efficiency
A photodetecting device includes a substrate, a first photosensitive layer supported by the substrate, and a second photosensitive layer supported by the substrate and adjacent to the first photosensitive layer, each of the first photosensitive layer and the second photosensitive layer being coupled to a first doped portion having a first conductivity type, and a second doped region having a second conductivity type different from the first conductivity type, wherein the first photosensitive layer is separated from the second photosensitive layer, and the first doped portion coupled to the first photosensitive layer is electrically connected to the first doped portion coupled to the second photosensitive layer.
H01L 31/113 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor
H04B 10/69 - Electrical arrangements in the receiver
A circuit that includes: a photodiode configured to absorb photons and to generate photo-carriers from the absorbed photons; a first MOSFET transistor that includes: a first channel terminal coupled to a first terminal of the photodiode and configured to collect a portion of the photo-carriers generated by the photodiode; a second channel terminal; and a gate terminal coupled to a first control voltage source; a first readout circuit configured to output a first readout voltage; a second readout circuit configured to output a second readout voltage; and a current-steering circuit configured to steer the photo-carriers generated by the photodiode to one or both of the first readout circuit and the second readout circuit.
H04N 1/193 - Simultaneously scanning picture elements on one main scanning line using electrically scanned linear arrays
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0376 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
H01L 31/102 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
H01L 31/075 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
H01L 31/109 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
96.
Waveguide structure and optoelectronic device comprising the same
A waveguide structure includes a first surface having a first width, a second surface having a second width, the second surface being opposite to the first surface, and a sidewall surface connecting the first surface and the second surface. The first width is greater than the second width.
G02B 6/10 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/028 - Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 29/08 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
G01S 17/36 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
G01S 7/4914 - Detector arrays, e.g. charge-transfer gates
H01L 31/11 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
G01S 17/42 - Simultaneous measurement of distance and other coordinates
A light emission apparatus includes a laser diode configured to emit a light; a laser driver electrically coupled to the laser diode, the laser driver being configured to drive the laser diode to generate the light; and an optical module arranged to receive the light emitted by the laser diode, the optical module comprising at least one optical element and being configured to adjust the light and emits a transmitting light; wherein the transmitting light emits from the optical module with an illumination angle and the optical module adjusts the light to vary the illumination angle.
H05B 33/08 - Circuit arrangements for operating electroluminescent light sources
H01L 27/00 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
G01S 7/481 - Constructional features, e.g. arrangements of optical elements
G01S 7/4863 - Detector arrays, e.g. charge-transfer gates
H01L 29/161 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form including two or more of the elements provided for in group
G01S 7/4914 - Detector arrays, e.g. charge-transfer gates
G01S 17/36 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
patents
