Abstract

A chip package includes a ball-grid-array (BGA) substrate; a first metal bump at a bottom of the ball-grid-array (BGA) substrate, wherein the first metal bump comprises tin; a field programmable chip package over and coupling to the ball-grid-array (BGA) substrate, wherein the field programmable chip package comprises a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip therein and a second metal bump at a bottom of the field programmable chip package and bonded to a top of the ball-grid-array (BGA) substrate; and a memory chip package under and coupling to the ball-grid-array (BGA) substrate, wherein the memory chip package comprises a first non-volatile memory (NVM) integrated-circuit (IC) chip therein and a third metal bump at a top of the memory chip package and bonded to the bottom of the ball-grid-array (BGA) substrate.

IPC Classes  ?

• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/495 - Lead-frames
• H01L 23/498 - Leads on insulating substrates
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
• H10D 80/30 - Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups , e.g. assemblies comprising integrated circuit processor chips

Abstract

A field-programmable-gate-array (FPGA) IC chip includes multiple first non-volatile memory cells in the FPGA IC chip, wherein the first non-volatile memory cells are configured to save multiple resulting values for a look-up table (LUT) of a programmable logic block of the FPGA IC chip, wherein the programmable logic block is configured to select, in accordance with its inputs, one from the resulting values into its output; and multiple second non-volatile memory cells in the FPGA IC chip, wherein the second non-volatile memory cells are configured to save multiple programming codes configured to control a switch of the FPGA IC chip.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• G11C 7/00 - Arrangements for writing information into, or reading information out from, a digital store
• H01L 23/00 - Details of semiconductor or other solid state devices
• H03K 19/17724 - Structural details of logic blocks
• H10B 41/00 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
• H10B 41/30 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
• H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10B 63/10 - Phase change RAM [PCRAM, PRAM] devices
• H10D 30/01 - Manufacture or treatment
• H10D 30/62 - Fin field-effect transistors [FinFET]
• H10D 84/85 - Complementary IGFETs, e.g. CMOS
• H10D 86/00 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
• H10D 89/10 - Integrated device layouts
• H10N 50/10 - Magnetoresistive devices
• H10N 50/85 - Materials of the active region

Abstract

A multichip package includes: a chip package comprising a first IC chip, a polymer layer in a space beyond and extending from a sidewall of the first IC chip, a through package via in the polymer layer, an interconnection scheme under the first IC chip, polymer layer and through package via, and a metal bump under the interconnection scheme and at a bottom of the chip package, wherein the first IC chip comprises memory cells for storing data therein associated with resulting values for a look-up table (LUT) and a selection circuit comprising a first input data set for a logic operation and a second input data set associated with the data stored in the memory cells, wherein the selection circuit selects, in accordance with the first input data set, data from the second input data set as an output data for the logic operation; and a second IC chip over the chip package, wherein the second IC chip couples to the first IC chip through, in sequence, the through package via and interconnection scheme, wherein the second IC chip comprises a hard macro having an input data associated with the output data for the logic operation.

IPC Classes  ?

• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A chip package includes an interposer comprising a silicon substrate, multiple metal vias passing through the silicon substrate, a first interconnection metal layer over the silicon substrate, a second interconnection metal layer over the silicon substrate, and an insulating dielectric layer over the silicon substrate and between the first and second interconnection metal layers; a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip over the interposer; multiple first metal bumps between the interposer and the FPGA IC chip; a first underfill between the interposer and the FPGA IC chip, wherein the first underfill encloses the first metal bumps; a non-volatile memory (NVM) IC chip over the interposer; multiple second metal bumps between the interposer and the NVM IC chip; and a second underfill between the interposer and the NVM IC chip, wherein the second underfill encloses the second metal bumps.

IPC Classes  ?

• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/498 - Leads on insulating substrates
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H03K 19/17736 - Structural details of routing resources
• H03K 19/17796 - Structural details for adapting physical parameters for physical disposition of blocks
• H10D 84/90 - Masterslice integrated circuits

Abstract

A multi-chip package includes: a first semiconductor integrated-circuit (IC) chip; a second semiconductor integrated-circuit (IC) chip over and bonded to the first semiconductor integrated-circuit (IC) chip; a plurality of first metal posts over and coupling to the first semiconductor integrated-circuit (IC) chip, wherein the plurality of first metal posts are in a space beyond and extending from a sidewall of the second semiconductor integrated-circuit (IC) chip; and a first polymer layer over the first semiconductor integrated-circuit (IC) chip and in the space, wherein the plurality of first metal posts are in the first polymer layer, wherein a top surface of the first polymer layer, a top surface of the second semiconductor integrated-circuit (IC) chip and a top surface of each of the plurality of first metal posts are coplanar.

IPC Classes  ?

• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• G11C 5/06 - Arrangements for interconnecting storage elements electrically, e.g. by wiring
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H03K 19/094 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors

Abstract

A chip package includes an interposer comprising a silicon substrate, multiple metal vias passing through the silicon substrate, a first interconnection metal layer over the silicon substrate, a second interconnection metal layer over the silicon substrate, and an insulating dielectric layer over the silicon substrate and between the first and second interconnection metal layers; afield-programmable-gate-array (FPGA) integrated-circuit (IC) chip over the interposer; multiple first metal bumps between the interposer and the FPGA IC chip; a first underfill between the interposer and the FPGA IC chip, wherein the first underfill encloses the first metal bumps; a non-volatile memory (NVM) IC chip over the interposer; multiple second metal bumps between the interposer and the NVM IC chip; and a second underfill between the interposer and the NVM IC chip, wherein the second underfill encloses the second metal bumps.

IPC Classes  ?

• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/498 - Leads on insulating substrates
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H03K 19/17736 - Structural details of routing resources
• H03K 19/17796 - Structural details for adapting physical parameters for physical disposition of blocks
• H10D 84/90 - Masterslice integrated circuits

Abstract

A multi-chip package comprising: an interconnection substrate comprising an interconnection bridge embedded in the interconnection substrate, and an interconnection scheme comprising a first interconnection metal layer, a second interconnection metal layer over the first interconnection layer and the interconnection bridge, and a polymer layer between the first and second interconnection metal layers, wherein the interconnection bridge is embedded in the interconnection scheme and has sidewalls surrounded by the polymer layer; a semiconductor IC chip over the interconnection substrate and across over an edge of the interconnection bridge; a memory chip over the interconnection substrate and across over an edge of the interconnection bridge, wherein the interconnection bridge comprises a plurality of metal interconnects configured for a data bus coupling the semiconductor IC chip to the memory chip, wherein a bitwidth of the data bus between the semiconductor IC chip and the memory chip is greater than or equal to 512.

IPC Classes  ?

• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H03K 19/17704 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H03K 19/17736 - Structural details of routing resources
• H03K 19/1776 - Structural details of configuration resources for memories

Abstract

A multi-chip package comprising an interconnection substrate; a first semiconductor IC chip over the interconnection substrate, wherein the first semiconductor IC chip comprises a first silicon substrate, a plurality of first metal vias passing through the first silicon substrate, a plurality of first transistors on a top surface of the first silicon substrate and a first interconnection scheme over the first silicon substrate, wherein the first interconnection scheme comprises a first interconnection metal layer over the first silicon substrate, a second interconnection metal layer over the first interconnection layer and the first silicon substrate and a first insulating dielectric layer over the first silicon substrate and between the first and second interconnection metal layers; a second semiconductor IC chip over and bonded to the first semiconductor IC chip; and a plurality of second metal vias over and coupling to the interconnection substrate, wherein the plurality of second metal vias are in a space extending from a sidewall of the first semiconductor IC chip.

IPC Classes  ?

• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 23/498 - Leads on insulating substrates
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/17704 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns
• H03K 19/1776 - Structural details of configuration resources for memories
• H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass

Abstract

A semiconductor integrated-circuit (IC) chip comprises a memory cell including: a latch circuit comprising first and second inverters coupling to each other, a first latch node coupling to an input point of the first inverter and an output point of the second inverter and a second latch node coupling to an input point of the second inverter and an output point of the first inverter; a first N-type MOS transistor having a first terminal coupling to the first latch node, a second terminal coupling to a first output point of the memory cell, and a first gate terminal for controlling coupling between the first latch node and the first output point of the memory cell; a second N-type MOS transistor having a third terminal coupling to the second latch node, a fourth terminal coupling to a second output point of the memory cell, and a second gate terminal for controlling coupling between the second latch node and the second output point of the memory cell; and a P-type MOS transistor having a fifth terminal coupling to the first latch node, a sixth terminal coupling to a third output point of the memory cell, and a third gate terminal for controlling coupling between the first latch node and the third output point of the memory cell.

IPC Classes  ?

• H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/498 - Leads on insulating substrates
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H03K 19/1776 - Structural details of configuration resources for memories

Abstract

A multi-chip package comprising an interconnection substrate; a first semiconductor IC chip over the interconnection substrate, wherein the first semiconductor IC chip comprises a first silicon substrate, a plurality of first metal vias passing through the first silicon substrate, a plurality of first transistors on a top surface of the first silicon substrate and a first interconnection scheme over the first silicon substrate, wherein the first interconnection scheme comprises a first interconnection metal layer over the first silicon substrate, a second interconnection metal layer over the first interconnection layer and the first silicon substrate and a first insulating dielectric layer over the first silicon substrate and between the first and second interconnection metal layers; a second semiconductor IC chip over and bonded to the first semiconductor IC chip; and a plurality of second metal vias over and coupling to the interconnection substrate, wherein the plurality of second metal vias are in a space extending from a sidewall of the first semiconductor IC chip.

IPC Classes  ?

• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 23/498 - Leads on insulating substrates
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/17704 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns
• H03K 19/1776 - Structural details of configuration resources for memories
• H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass

Abstract

A multi-chip package comprising an interconnection substrate; a first semiconductor IC chip over the interconnection substrate, wherein the first semiconductor IC chip comprises a first silicon substrate, a plurality of first metal vias passing through the first silicon substrate, a plurality of first transistors on a top surface of the first silicon substrate and a first interconnection scheme over the first silicon substrate, wherein the first interconnection scheme comprises a first interconnection metal layer over the first silicon substrate, a second interconnection metal layer over the first interconnection layer and the first silicon substrate and a first insulating dielectric layer over the first silicon substrate and between the first and second interconnection metal layers; a second semiconductor IC chip over and bonded to the first semiconductor IC chip; and a plurality of second metal vias over and coupling to the interconnection substrate, wherein the plurality of second metal vias are in a space extending from a sidewall of the first semiconductor IC chip.

IPC Classes  ?

• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 23/498 - Leads on insulating substrates
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/17704 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns
• H03K 19/1776 - Structural details of configuration resources for memories
• H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass

Abstract

A chip package includes an interposer comprising a silicon substrate, multiple metal vias passing through the silicon substrate, a first interconnection metal layer over the silicon substrate, a second interconnection metal layer over the silicon substrate, and an insulating dielectric layer over the silicon substrate and between the first and second interconnection metal layers; a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip over the interposer; multiple first metal bumps between the interposer and the FPGA IC chip; a first underfill between the interposer and the FPGA IC chip, wherein the first underfill encloses the first metal bumps; a non-volatile memory (NVM) IC chip over the interposer; multiple second metal bumps between the interposer and the NVM IC chip; and a second underfill between the interposer and the NVM IC chip, wherein the second underfill encloses the second metal bumps.

IPC Classes  ?

• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/498 - Leads on insulating substrates
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H03K 19/17736 - Structural details of routing resources
• H03K 19/17796 - Structural details for adapting physical parameters for physical disposition of blocks
• H10D 84/90 - Masterslice integrated circuits

Abstract

A multi-chip package includes a ball-grid-array (BGA) substrate; a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip over the ball-grid-array (BGA) substrate; a plurality of first metal bumps between the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip and ball-grid-array (BGA) substrate, wherein each of the plurality of first metal bumps has a top end joining the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip and a bottom end joining the ball-grid-array (BGA) substrate; a non-volatile-memory (NVM) integrated-circuit (IC) chip package over the ball-grid-array (BGA) substrate, wherein the non-volatile-memory (NVM) integrated-circuit (IC) chip package comprises a circuit substrate, a non-volatile-memory (NVM) integrated-circuit (IC) chip over and coupling to the circuit substrate and a plurality of second metal bumps under and on the circuit substrate and bonded to the ball-grid-array (BGA) substrate; and a plurality of tin-containing bumps under and on the ball-grid-array (BGA) substrate.

IPC Classes  ?

• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass

Abstract

A connector may include: a first substrate having a top surface, a bottom surface opposite to the top surface of the top substrate and a side surface joining an edge of the top surface of the first substrate and joining an edge of the bottom surface of the first substrate; a second substrate having a top surface, a bottom surface opposite to the top surface of the second substrate and a side surface joining an edge of the top surface of the second substrate and joining an edge of the bottom surface of the second substrate, wherein the side surface of the second substrate faces the side surface of the first substrate, wherein the top surfaces of the first and second substrates are coplanar with each other at a top of the connector and the bottom surfaces of the first and second substrates are coplanar with each other at a bottom of the connector; and a plurality of metal traces between, in a first horizontal direction, the side surfaces of the first and second substrates, wherein each of the plurality of metal traces has a top end at the top of the connector and a bottom end at the bottom of the connector.

IPC Classes  ?

• H01L 23/498 - Leads on insulating substrates
• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/15 - Ceramic or glass substrates
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H05K 1/14 - Structural association of two or more printed circuits

Abstract

A chip package includes an interposer comprising a silicon substrate, multiple metal vias passing through the silicon substrate, a first interconnection metal layer over the silicon substrate, a second interconnection metal layer over the silicon substrate, and an insulating dielectric layer over the silicon substrate and between the first and second interconnection metal layers; afield-programmable-gate-array (FPGA) integrated-circuit (IC) chip over the interposer; multiple first metal bumps between the interposer and the FPGA IC chip; a first underfill between the interposer and the FPGA IC chip, wherein the first underfill encloses the first metal bumps; a non-volatile memory (NVM) IC chip over the interposer; multiple second metal bumps between the interposer and the NVM IC chip; and a second underfill between the interposer and the NVM IC chip, wherein the second underfill encloses the second metal bumps.

IPC Classes  ?

• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/498 - Leads on insulating substrates
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 27/118 - Masterslice integrated circuits
• H03K 19/17736 - Structural details of routing resources
• H03K 19/17796 - Structural details for adapting physical parameters for physical disposition of blocks

Abstract

A multi-chip package includes a first IC chip; a first sealing layer at a same first horizontal level as the first IC chip; a first silicon-oxide-containing layer over the first IC chip and first sealing layer and across an edge of the first IC chip; a first bonding pad in a first opening in the first silicon-oxide-containing layer, wherein the first bonding pad has a copper layer in the first opening; a second IC chip over the first IC chip; a second sealing layer at a same second horizontal level as the second IC chip; a second silicon-oxide-containing layer under the second IC chip and having a bottom surface bonded to and in contact with a top surface of the first silicon-oxide-containing layer; a second bonding pad under the second IC chip, in a second opening in the second silicon-oxide-containing layer and coupling to the second IC chip, wherein the second bonding pad has a copper layer in the second opening and having a bottom surface bonded to and in contact with a top surface of the copper layer of the first bonding pad; an interconnection scheme under the first IC chip and first sealing layer and across an edge of the first IC chip; and a metal bump under and in contact with the interconnection scheme, wherein the metal bump comprises tin.

IPC Classes  ?

• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass

Abstract

A chip package includes a first integrated-circuit (IC) chip; a second integrated-circuit (IC) chip over the first integrated-circuit (IC) chip; a connector over the first integrated-circuit (IC) chip and on a same horizontal level as the second integrated-circuit (IC) chip, wherein the connector comprises a substrate over the first integrated-circuit (IC) chip and a plurality of through vias vertically extending through the substrate of the connector; a polymer layer over the first integrated-circuit (IC) chip, wherein the polymer layer has a portion between the second integrated-circuit (IC) chip and connector, wherein the polymer layer has a top surface coplanar with a top surface of the second integrated-circuit (IC) chip, a top surface of the substrate of the connector and a top surface of each of the plurality of through vias; and an interconnection scheme on the top surface of the polymer layer, the top surface of the second integrated-circuit (IC) chip, the top surface of the connector and the top surface of each of the plurality of through vias.

IPC Classes  ?

• H01L 23/528 - Layout of the interconnection structure
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials

Abstract

A semiconductor integrated-circuit (IC) chip includes: a first transistor, a second transistor at a same horizontal level as the first transistor, a first oxide layer at the same horizontal level as the first and second transistors, horizontally around the first and second transistors and having a portion horizontally between the first and second transistors; a frontside interconnection scheme under the first and second transistors and first oxide layer, a backside interconnection scheme over the first and second transistor and first oxide layer, and a metal interconnect vertically in the portion of the first oxide layer and coupling the frontside interconnection scheme to the backside interconnection scheme.

IPC Classes  ?

• H01L 27/088 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
• H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
• H01L 29/49 - Metal-insulator semiconductor electrodes
• H01L 29/775 - Field-effect transistors with one-dimensional charge carrier gas channel, e.g. quantum wire FET
• H01L 29/786 - Thin-film transistors

Abstract

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

IPC Classes  ?

• G06F 30/34 - Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD]
• G05B 19/042 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
• G06F 3/06 - Digital input from, or digital output to, record carriers
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H03K 19/1776 - Structural details of configuration resources for memories
• H10B 20/00 - Read-only memory [ROM] devices
• H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

Abstract

A chip package includes a first integrated-circuit (IC) chip; a second integrated-circuit (IC) chip over the first integrated-circuit (IC) chip; a connector over the first integrated-circuit (IC) chip and on a same horizontal level as the second integrated-circuit (IC) chip, wherein the connector comprises a substrate over the first integrated-circuit (IC) chip and a plurality of through vias vertically extending through the substrate of the connector; a polymer layer over the first integrated-circuit (IC) chip, wherein the polymer layer has a portion between the second integrated-circuit (IC) chip and connector, wherein the polymer layer has a top surface coplanar with a top surface of the second integrated-circuit (IC) chip, a top surface of the substrate of the connector and a top surface of each of the plurality of through vias; and an interconnection scheme on the top surface of the polymer layer, the top surface of the second integrated-circuit (IC) chip, the top surface of the connector and the top surface of each of the plurality of through vias.

IPC Classes  ?

• H01L 23/528 - Layout of the interconnection structure
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials

Abstract

A field-programmable-gate-array (FPGA) integrated-circuit (IC) chip configured to perform a logic function based on a look-up table (LUT), includes: multiple non-volatile memory cells therein configured to store multiple resulting values of the look-up table (LUT); and a programmable logic block therein having multiple static-random-access-memory (SRAM) cells configured to store the resulting values passed from the non-volatile memory cells, wherein the programmable logic block is configured to select, in accordance with one of the combinations of its inputs, one from the resulting values stored in the static-random-access-memory (SRAM) cells into its output.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• G11C 11/419 - Read-write [R-W] circuits
• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
• G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/498 - Leads on insulating substrates
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/0948 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET using CMOS
• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H03K 19/21 - EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one inputCOINCIDENCE circuits, i.e. giving output only if all input signals are identical
• H10B 10/00 - Static random access memory [SRAM] devices
• H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching

Abstract

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

IPC Classes  ?

• G06F 30/34 - Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD]
• G05B 19/042 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
• G06F 3/06 - Digital input from, or digital output to, record carriers
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H03K 19/1776 - Structural details of configuration resources for memories
• H10B 20/00 - Read-only memory [ROM] devices
• H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

Abstract

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

IPC Classes  ?

• G06F 30/34 - Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD]
• G05B 19/042 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
• G06F 3/06 - Digital input from, or digital output to, record carriers
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H03K 19/1776 - Structural details of configuration resources for memories
• H10B 20/00 - Read-only memory [ROM] devices
• H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

Abstract

A chip package includes a first integrated-circuit (IC) chip; a second integrated-circuit (IC) chip over the first integrated-circuit (IC) chip; a connector over the first integrated-circuit (IC) chip and on a same horizontal level as the second integrated-circuit (IC) chip, wherein the connector comprises a substrate over the first integrated-circuit (IC) chip and a plurality of through vias vertically extending through the substrate of the connector; a polymer layer over the first integrated-circuit (IC) chip, wherein the polymer layer has a portion between the second integrated-circuit (IC) chip and connector, wherein the polymer layer has a top surface coplanar with a top surface of the second integrated-circuit (IC) chip, a top surface of the substrate of the connector and a top surface of each of the plurality of through vias; and an interconnection scheme on the top surface of the polymer layer, the top surface of the second integrated-circuit (IC) chip, the top surface of the connector and the top surface of each of the plurality of through vias.

IPC Classes  ?

• H01L 23/528 - Layout of the interconnection structure
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Abstract

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

IPC Classes  ?

• H10D 84/90 - Masterslice integrated circuits
• G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports

Abstract

A field-programmable-gate-array (FPGA) IC chip includes multiple first non-volatile memory cells in the FPGA IC chip, wherein the first non-volatile memory cells are configured to save multiple resulting values for a look-up table (LUT) of a programmable logic block of the FPGA IC chip, wherein the programmable logic block is configured to select, in accordance with its inputs, one from the resulting values into its output; and multiple second non-volatile memory cells in the FPGA IC chip, wherein the second non-volatile memory cells are configured to save multiple programming codes configured to control a switch of the FPGA IC chip.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• G11C 7/00 - Arrangements for writing information into, or reading information out from, a digital store
• H01L 23/00 - Details of semiconductor or other solid state devices
• H03K 19/17724 - Structural details of logic blocks
• H10B 41/00 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
• H10B 41/30 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
• H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10B 63/10 - Phase change RAM [PCRAM, PRAM] devices
• H10D 30/01 - Manufacture or treatment
• H10D 30/62 - Fin field-effect transistors [FinFET]
• H10D 84/85 - Complementary IGFETs, e.g. CMOS
• H10D 86/00 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
• H10D 89/10 - Integrated device layouts
• H10N 50/10 - Magnetoresistive devices
• H10N 50/85 - Materials of the active region

Abstract

A multi-chip package includes a ball-grid-array (BGA) substrate; a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip over the ball-grid-army (BGA) substrate; a plurality of first metal bumps between the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip and ball-grid-array (BGA) substrate, wherein each of the plurality of first metal bumps has a top end joining the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip and a bottom end joining the ball-grid-array (BGA) substrate; a non-volatile-memory (NVM) integrated-circuit (IC) chip package over the ball-grid-array (BGA) substrate, wherein the non-volatile-memory (NVM) integrated-circuit (IC) chip package comprises a circuit substrate, a non-volatile-memory (NVM) integrated-circuit (IC) chip over and coupling to the circuit substrate and a plurality of second metal bumps under and on the circuit substrate and bonded to the ball-grid-array (BGA) substrate; and a plurality of tin-containing bumps under and on the ball-grid-array (BGA) substrate.

IPC Classes  ?

• H01L 23/498 - Leads on insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A multi-chip package includes a first semiconductor integrated-circuit (IC) chip comprising a first input/output (I/O) circuit therein; and an input/output (I/O) integrated-circuit (IC) chip comprising a second input/output (I/O) circuit therein coupling to the first input/output (I/O) circuit, a third input/output (I/O) circuit therein, a voltage-level shift-up circuit therein configured to shift data from a first voltage level at a first node thereof coupling to the second input/output (I/O) circuit to a second voltage at a second node thereof coupling to the third input/output (I/O) circuit and a voltage-level shift-down circuit therein configured to shift data from the second voltage level at the second node coupling to the third input/output (I/O) circuit to the first voltage level at the first node coupling to the second input/output (I/O) circuit, wherein the second voltage level is higher than the first voltage level.

IPC Classes  ?

• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
• H01L 25/04 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers
• H03K 3/037 - Bistable circuits

Abstract

A multichip package includes: a chip package comprising a first IC chip, a polymer layer in a space beyond and extending from a sidewall of the first IC chip, a through package via in the polymer layer, an interconnection scheme under the first IC chip, polymer layer and through package via, and a metal bump under the interconnection scheme and at a bottom of the chip package, wherein the first IC chip comprises memory cells for storing data therein associated with resulting values for a look-up table (LUT) and a selection circuit comprising a first input data set for a logic operation and a second input data set associated with the data stored in the memory cells, wherein the selection circuit selects, in accordance with the first input data set, data from the second input data set as an output data for the logic operation; and a second IC chip over the chip package, wherein the second IC chip couples to the first IC chip through, in sequence, the through package via and interconnection scheme, wherein the second IC chip comprises a hard macro having an input data associated with the output data for the logic operation.

IPC Classes  ?

• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A multi-chip package includes: a first semiconductor integrated-circuit (IC) chip; a second semiconductor integrated-circuit (IC) chip over and bonded to the first semiconductor integrated-circuit (IC) chip; a plurality of first metal posts over and coupling to the first semiconductor integrated-circuit (IC) chip, wherein the plurality of first metal posts are in a space beyond and extending from a sidewall of the second semiconductor integrated-circuit (IC) chip; and a first polymer layer over the first semiconductor integrated-circuit (IC) chip and in the space, wherein the plurality of first metal posts are in the first polymer layer, wherein a top surface of the first polymer layer, a top surface of the second semiconductor integrated-circuit (IC) chip and a top surface of each of the plurality of first metal posts are coplanar.

IPC Classes  ?

• H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
• G11C 5/06 - Arrangements for interconnecting storage elements electrically, e.g. by wiring
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H03K 19/094 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors

Abstract

A semiconductor integrated-circuit (IC) chip comprises a memory cell including: a latch circuit comprising first and second inverters coupling to each other, a first latch node coupling to an input point of the first inverter and an output point of the second inverter and a second latch node coupling to an input point of the second inverter and an output point of the first inverter; a first N-type MOS transistor having a first terminal coupling to the first latch node, a second terminal coupling to a first output point of the memory cell, and a first gate terminal for controlling coupling between the first latch node and the first output point of the memory cell; a second N-type MOS transistor having a third terminal coupling to the second latch node, a fourth terminal coupling to a second output point of the memory cell, and a second gate terminal for controlling coupling between the second latch node and the second output point of the memory cell; and a P-type MOS transistor having a fifth terminal coupling to the first latch node, a sixth terminal coupling to a third output point of the memory cell, and a third gate terminal for controlling coupling between the first latch node and the third output point of the memory cell.

IPC Classes  ?

• H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/498 - Leads on insulating substrates
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H03K 19/1776 - Structural details of configuration resources for memories

Abstract

An expandable logic scheme based on a chip package, includes: an interconnection substrate comprising a set of data buses for use in an expandable interconnection scheme, wherein the set of data buses is divided into a plurality of data bus subsets; and a first field-programmable-gate-array (FPGA) integrated-circuit (IC) chip comprising a plurality of first I/O ports coupling to the set of data buses and at least one first I/O-port selection pad configured to select a first port from the plurality of first I/O ports in a first clock cycle to pass a first data between a first data bus subset of the plurality of data bus subsets and the first field-programmable-gate-array (FPGA) integrated-circuit (IC) chip.

IPC Classes  ?

• H03K 19/0175 - Coupling arrangementsInterface arrangements
• H03K 19/1776 - Structural details of configuration resources for memories
• G06F 30/34 - Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD]

Abstract

A chip package includes a first interconnection scheme; a plurality of first metal contacts under and on the first interconnection scheme and at a bottom surface of the chip package; a first semiconductor IC chip over the first interconnection scheme; a first connector over the first interconnection scheme and at a same horizontal level as the first semiconductor IC chip, wherein the first connector comprises a first substrate and a plurality of first through vias vertically extending through the first substrate of the first connector; a first polymer layer over the first interconnection scheme, wherein the first polymer layer has a top surface coplanar with a top surface of the first semiconductor IC chip, a top surface of the first substrate of the first connector and a top surface of each of the plurality of first through vias; and a second interconnection scheme on the top surface of the first polymer layer, the top surface of the first semiconductor IC chip, the top surface of the first connector and the top surface of each of the plurality of first through vias, wherein the second interconnection scheme comprises a plurality of second metal contacts at a top surface of the chip package.

IPC Classes  ?

• H01L 23/498 - Leads on insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

A multi-chip package includes a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip configured to perform a logic function based on a truth table, wherein the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip comprises multiple non-volatile memory cells therein configured to store multiple resulting values of the truth table, and a programmable logic block therein configured to select, in accordance with one of the combinations of its inputs, one from the resulting values into its output; and a memory chip coupling to the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip, wherein a data bit width between the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip and the memory chip is greater than or equal to 64.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/0948 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET using CMOS
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• G11C 11/419 - Read-write [R-W] circuits
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
• G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H01L 23/498 - Leads on insulating substrates
• H10B 10/00 - Static random access memory [SRAM] devices
• H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching

Abstract

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

IPC Classes  ?

• G06F 30/34 - Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD]
• G05B 19/042 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
• G06F 3/06 - Digital input from, or digital output to, record carriers
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H03K 19/1776 - Structural details of configuration resources for memories
• H10B 20/00 - Read-only memory [ROM] devices
• H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

Abstract

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

IPC Classes  ?

• G06F 30/34 - Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD]
• G06F 3/06 - Digital input from, or digital output to, record carriers
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• H03K 19/1776 - Structural details of configuration resources for memories
• G05B 19/042 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H10B 20/00 - Read-only memory [ROM] devices
• H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

Abstract

A multi-chip package comprising an interconnection substrate; a first semiconductor IC chip over the interconnection substrate, wherein the first semiconductor IC chip comprises a first silicon substrate, a plurality of first metal vias passing through the first silicon substrate, a plurality of first transistors on a top surface of the first silicon substrate and a first interconnection scheme over the first silicon substrate, wherein the first interconnection scheme comprises a first interconnection metal layer over the first silicon substrate, a second interconnection metal layer over the first interconnection layer and the first silicon substrate and a first insulating dielectric layer over the first silicon substrate and between the first and second interconnection metal layers; a second semiconductor IC chip over and bonded to the first semiconductor IC chip; and a plurality of second metal vias over and coupling to the interconnection substrate, wherein the plurality of second metal vias are in a space extending from a sidewall of the first semiconductor IC chip.

IPC Classes  ?

• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 23/498 - Leads on insulating substrates
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/17704 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns
• H03K 19/1776 - Structural details of configuration resources for memories
• H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass

Abstract

A method for a through-silicon-via (TSV) connector includes: providing a semiconductor wafer with a silicon substrate, wherein the semiconductor wafer has a frontside and a backside opposite to the frontside thereof; forming multiple holes in the silicon substrate of the semiconductor wafer; forming a first insulating layer at a sidewall and bottom of each of the holes; forming a metal layer over the semiconductor wafer and in each of the holes; polishing the metal layer outside each of the holes to expose a frontside surface of the metal layer in each of the holes; forming multiple metal bumps or pads each on the frontside surface of the metal layer in at least one of the holes; grinding a backside of the silicon substrate of the semiconductor wafer to expose a backside surface of the metal layer in each of the holes, wherein the backside surface of the metal layer in each of the holes and a backside surface of the silicon substrate of the semiconductor wafer are coplanar; and cutting the semiconductor wafer to form multiple through-silicon-via (TSV) connectors.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or

Abstract

A semiconductor IC chip comprising: a silicon substrate; a first transistor at a top surface of the silicon substrate; a first through silicon via (TSV) vertically in the silicon substrate; a second through silicon via (TSV) vertically in the silicon substrate; a first interconnection scheme on the top surface of the silicon substrate, wherein the first interconnection scheme comprises an insulating dielectric layer, a metal via in the insulating dielectric layer, a metal pad on a bottom surface of the insulating dielectric layer and a bottom surface of the metal via and coupling to the first TSV, and a first metal interconnect coupling the second TSV to the first transistor; and a second interconnection scheme on a bottom surface of the silicon substrate, wherein the second interconnection scheme comprises a second metal interconnect coupling the first TSV to the second TSV; and a first metal contact at a top of the semiconductor IC chip and on a top surface of the first interconnection scheme, wherein the first metal contact couples to the first transistor through, in sequence, the metal via, metal pad, first TSV, second metal interconnect, second TSV and first metal interconnect, wherein the first metal contact is configured for coupling to a voltage of power supply.

IPC Classes  ?

• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass

Abstract

A chip package includes an interposer comprising a silicon substrate, multiple metal vias passing through the silicon substrate, a first interconnection metal layer over the silicon substrate, a second interconnection metal layer over the silicon substrate, and an insulating dielectric layer over the silicon substrate and between the first and second interconnection metal layers; a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip over the interposer; multiple first metal bumps between the interposer and the FPGA IC chip; a first underfill between the interposer and the FPGA IC chip, wherein the first underfill encloses the first metal bumps; a non-volatile memory (NVM) IC chip over the interposer; multiple second metal bumps between the interposer and the NVM IC chip; and a second underfill between the interposer and the NVM IC chip, wherein the second underfill encloses the second metal bumps.

IPC Classes  ?

• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/498 - Leads on insulating substrates
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/528 - Layout of the interconnection structure
• H03K 19/17736 - Structural details of routing resources
• H03K 19/17796 - Structural details for adapting physical parameters for physical disposition of blocks
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 27/118 - Masterslice integrated circuits

Abstract

A semiconductor integrated-circuit (IC) chip comprises a memory cell including: a latch circuit comprising first and second inverters coupling to each other, a first latch node coupling to an input point of the first inverter and an output point of the second inverter and a second latch node coupling to an input point of the second inverter and an output point of the first inverter; a first N-type MOS transistor having a first terminal coupling to the first latch node, a second terminal coupling to a first output point of the memory cell, and a first gate terminal for controlling coupling between the first latch node and the first output point of the memory cell; a second N-type MOS transistor having a third terminal coupling to the second latch node, a fourth terminal coupling to a second output point of the memory cell, and a second gate terminal for controlling coupling between the second latch node and the second output point of the memory cell; and a P-type MOS transistor having a fifth terminal coupling to the first latch node, a sixth terminal coupling to a third output point of the memory cell, and a third gate terminal for controlling coupling between the first latch node and the third output point of the memory cell.

IPC Classes  ?

• G11C 11/418 - Address circuits
• H03K 3/037 - Bistable circuits
• H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
• G11C 11/419 - Read-write [R-W] circuits

Abstract

A connector may include: a first substrate having a top surface, a bottom surface opposite to the top surface of the top substrate and a side surface joining an edge of the top surface of the first substrate and joining an edge of the bottom surface of the first substrate; a second substrate having a top surface, a bottom surface opposite to the top surface of the second substrate and a side surface joining an edge of the top surface of the second substrate and joining an edge of the bottom surface of the second substrate, wherein the side surface of the second substrate faces the side surface of the first substrate, wherein the top surfaces of the first and second substrates are coplanar with each other at a top of the connector and the bottom surfaces of the first and second substrates are coplanar with each other at a bottom of the connector; and a plurality of metal traces between, in a first horizontal direction, the side surfaces of the first and second substrates, wherein each of the plurality of metal traces has a top end at the top of the connector and a bottom end at the bottom of the connector.

IPC Classes  ?

• H05K 1/14 - Structural association of two or more printed circuits
• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/498 - Leads on insulating substrates
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H01L 23/15 - Ceramic or glass substrates
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or

Abstract

A chip package comprises an interposer; an FPGA IC chip over the interposer, wherein the FPGA IC chip comprises a programmable logic block configured to perform a logic operation on its inputs, wherein the programmable logic block comprises a look-up table configured to be provided with multiple resulting values of the logic operation on multiple combinations of the inputs of the programmable logic block respectively, wherein the programmable logic block is configured to select, in accordance with one of the combinations of its inputs, one from the resulting values into its output, and multiple non-volatile memory cells configured to save the resulting values respectively; multiple first metal bumps between the interposer and the FPGA IC chip; and an underfill between the interposer and the FPGA IC chip, wherein the underfill encloses the first metal bumps.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H03K 19/21 - EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one inputCOINCIDENCE circuits, i.e. giving output only if all input signals are identical
• H10B 41/00 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Abstract

A three-dimensional programmable interconnection system based on a multi-chip package includes: a programmable metal bump or pad at a bottom of the multi-chip package; a first programmable interconnect provided by an interposer of the multi-chip package; a second programmable interconnect provided by the interposer; and a switch provided by a first semiconductor chip of the multi-chip package, wherein the switch is configured to control connection between the first and second programmable interconnects, wherein the programmable metal bump or pad couples to a second semiconductor chip of the multi-chip package through the switch and the first and second programmable interconnects, wherein the first and second semiconductor chips are over the interposer.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates

Abstract

A micro heat transfer component includes a bottom metal plate; a top metal plate; a plurality of sidewalls each having a top end joining the top metal plate and a bottom end joining the bottom metal plate, wherein the top and bottom metal plates and the sidewalls form a chamber in the micro heat transfer component; a plurality of metal posts in the chamber and between the top and bottom metal plates, wherein each of the metal posts has a top end joining the top metal plate and a bottom end joining the bottom metal plate; a metal layer in the chamber, between the top and bottom metal plates and intersecting each of the metal posts, wherein a plurality of openings are in the metal layer, wherein a first space in the chamber is between the metal layer and bottom metal plate and a second space in the chamber is between the metal layer and top metal plate; and a liquid in the first space in the chamber.

IPC Classes  ?

• H01L 23/427 - Cooling by change of state, e.g. use of heat pipes
• H01L 25/10 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices having separate containers
• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
• F28D 15/04 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes with tubes having a capillary structure

Abstract

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

IPC Classes  ?

• H01L 27/11 - Static random access memory structures
• G11C 11/44 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using super-conductive elements, e.g. cryotron
• H01L 27/118 - Masterslice integrated circuits
• G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• G11C 5/04 - Supports for storage elementsMounting or fixing of storage elements on such supports

Abstract

A field-programmable-gate-array (FPGA) IC chip includes multiple first non-volatile memory cells in the FPGA IC chip, wherein the first non-volatile memory cells are configured to save multiple resulting values for a look-up table (LUT) of a programmable logic block of the FPGA IC chip, wherein the programmable logic block is configured to select, in accordance with its inputs, one from the resulting values into its output; and multiple second non-volatile memory cells in the FPGA IC chip, wherein the second non-volatile memory cells are configured to save multiple programming codes configured to control a switch of the FPGA IC chip.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• G11C 7/00 - Arrangements for writing information into, or reading information out from, a digital store
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 29/66 - Types of semiconductor device
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H03K 19/17724 - Structural details of logic blocks
• H10B 41/00 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
• H10B 41/30 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
• H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 50/10 - Magnetoresistive devices
• H10N 50/85 - Materials of the active region

Abstract

A multi-chip package includes: a first semiconductor integrated-circuit (IC) chip; a second semiconductor integrated-circuit (IC) chip over and bonded to the first semiconductor integrated-circuit (IC) chip; a plurality of first metal posts over and coupling to the first semiconductor integrated-circuit (IC) chip, wherein the plurality of first metal posts are in a space beyond and extending from a sidewall of the second semiconductor integrated-circuit (IC) chip; and a first polymer layer over the first semiconductor integrated-circuit (IC) chip and in the space, wherein the plurality of first metal posts are in the first polymer layer, wherein a top surface of the first polymer layer, a top surface of the second semiconductor integrated-circuit (IC) chip and a top surface of each of the plurality of first metal posts are coplanar.

IPC Classes  ?

• H01L 23/52 - Arrangements for conducting electric current within the device in operation from one component to another
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H03K 19/094 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors
• G11C 5/06 - Arrangements for interconnecting storage elements electrically, e.g. by wiring

Abstract

A multichip package includes: a chip package comprising a first IC chip, a polymer layer in a space beyond and extending from a sidewall of the first IC chip, a through package via in the polymer layer, an interconnection scheme under the first IC chip, polymer layer and through package via, and a metal bump under the interconnection scheme and at a bottom of the chip package, wherein the first IC chip comprises memory cells for storing data therein associated with resulting values for a look-up table (LUT) and a selection circuit comprising a first input data set for a logic operation and a second input data set associated with the data stored in the memory cells, wherein the selection circuit selects, in accordance with the first input data set, data from the second input data set as an output data for the logic operation; and a second IC chip over the chip package, wherein the second IC chip couples to the first IC chip through, in sequence, the through package via and interconnection scheme, wherein the second IC chip comprises a hard macro having an input data associated with the output data for the logic operation.

IPC Classes  ?

• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

A field-programmable-gate-array (FPGA) integrated-circuit (IC) chip configured to perform a logic function based on a look-up table (LUT), includes: multiple non-volatile memory cells therein configured to store multiple resulting values of the look-up table (LUT); and a programmable logic block therein having multiple static-random-access-memory (SRAM) cells configured to store the resulting values passed from the non-volatile memory cells, wherein the programmable logic block is configured to select, in accordance with one of the combinations of its inputs, one from the resulting values stored in the static-random-access-memory (SRAM) cells into its output.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• G11C 11/419 - Read-write [R-W] circuits
• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
• G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/498 - Leads on insulating substrates
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/0948 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET using CMOS
• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H10B 10/00 - Static random access memory [SRAM] devices
• H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
• H03K 19/21 - EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one inputCOINCIDENCE circuits, i.e. giving output only if all input signals are identical

Abstract

An expandable logic scheme based on a chip package, includes: an interconnection substrate comprising a set of data buses for use in an expandable interconnection scheme, wherein the set of data buses is divided into a plurality of data bus subsets; and a first field-programmable-gate-array (FPGA) integrated-circuit (IC) chip comprising a plurality of first I/O ports coupling to the set of data buses and at least one first I/O-port selection pad configured to select a first port from the plurality of first I/O ports in a first clock cycle to pass a first data between a first data bus subset of the plurality of data bus subsets and the first field-programmable-gate-array (FPGA) integrated-circuit (IC) chip.

IPC Classes  ?

• H03K 19/0175 - Coupling arrangementsInterface arrangements
• H03K 19/1776 - Structural details of configuration resources for memories
• G06F 30/34 - Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD]

Abstract

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

IPC Classes  ?

• G06F 30/34 - Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD]
• H01L 27/11524 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region with cell select transistors, e.g. NAND
• H01L 27/112 - Read-only memory structures
• G06F 3/06 - Digital input from, or digital output to, record carriers
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• H03K 19/1776 - Structural details of configuration resources for memories
• G05B 19/042 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits

Abstract

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

IPC Classes  ?

• G06F 30/34 - Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD]
• G06F 3/06 - Digital input from, or digital output to, record carriers
• H01L 27/112 - Read-only memory structures
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• H03K 19/1776 - Structural details of configuration resources for memories
• G05B 19/042 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H01L 27/11524 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region with cell select transistors, e.g. NAND

Abstract

A field-programmable-gate-array (FPGA) IC chip includes multiple first non-volatile memory cells in the FPGA IC chip, wherein the first non-volatile memory cells are configured to save multiple resulting values for a look-up table (LUT) of a programmable logic block of the FPGA IC chip, wherein the programmable logic block is configured to select, in accordance with its inputs, one from the resulting values into its output; and multiple second non-volatile memory cells in the FPGA IC chip, wherein the second non-volatile memory cells are configured to save multiple programming codes configured to control a switch of the FPGA IC chip.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/17724 - Structural details of logic blocks
• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• H01L 27/11517 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 43/08 - Magnetic-field-controlled resistors
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 27/11521 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/66 - Types of semiconductor device
• G11C 7/00 - Arrangements for writing information into, or reading information out from, a digital store
• H01L 43/10 - Selection of materials

Abstract

A method for a through-silicon-via (TSV) connector includes: providing a semiconductor wafer with a silicon substrate, wherein the semiconductor wafer has a frontside and a backside opposite to the frontside thereof; forming multiple holes in the silicon substrate of the semiconductor wafer; forming a first insulating layer at a sidewall and bottom of each of the holes; forming a metal layer over the semiconductor wafer and in each of the holes; polishing the metal layer outside each of the holes to expose a frontside surface of the metal layer in each of the holes; forming multiple metal bumps or pads each on the frontside surface of the metal layer in at least one of the holes; grinding a backside of the silicon substrate of the semiconductor wafer to expose a backside surface of the metal layer in each of the holes, wherein the backside surface of the metal layer in each of the holes and a backside surface of the silicon substrate of the semiconductor wafer are coplanar; and cutting the semiconductor wafer to form multiple through-silicon-via (TSV) connectors.

IPC Classes  ?

• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or

Abstract

A chip package includes an interposer comprising a silicon substrate, multiple metal vias passing through the silicon substrate, a first interconnection metal layer over the silicon substrate, a second interconnection metal layer over the silicon substrate, and an insulating dielectric layer over the silicon substrate and between the first and second interconnection metal layers; a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip over the interposer; multiple first metal bumps between the interposer and the FPGA IC chip; a first underfill between the interposer and the FPGA IC chip, wherein the first underfill encloses the first metal bumps; a non-volatile memory (NVM) IC chip over the interposer; multiple second metal bumps between the interposer and the NVM IC chip; and a second underfill between the interposer and the NVM IC chip, wherein the second underfill encloses the second metal bumps.

IPC Classes  ?

• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/498 - Leads on insulating substrates
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H03K 19/17736 - Structural details of routing resources
• H03K 19/17796 - Structural details for adapting physical parameters for physical disposition of blocks
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 27/118 - Masterslice integrated circuits
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties

Abstract

A multi-chip package comprising: an interconnection substrate comprising an interconnection bridge embedded in the interconnection substrate, and an interconnection scheme comprising a first interconnection metal layer, a second interconnection metal layer over the first interconnection layer and the interconnection bridge, and a polymer layer between the first and second interconnection metal layers, wherein the interconnection bridge is embedded in the interconnection scheme and has sidewalls surrounded by the polymer layer; a semiconductor IC chip over the interconnection substrate and across over an edge of the interconnection bridge; a memory chip over the interconnection substrate and across over an edge of the interconnection bridge, wherein the interconnection bridge comprises a plurality of metal interconnects configured for a data bus coupling the semiconductor IC chip to the memory chip, wherein a bitwidth of the data bus between the semiconductor IC chip and the memory chip is greater than or equal to 512.

IPC Classes  ?

• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H03K 19/17704 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H03K 19/17736 - Structural details of routing resources
• H03K 19/1776 - Structural details of configuration resources for memories

Abstract

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

IPC Classes  ?

• H01L 27/11 - Static random access memory structures
• G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• H01L 27/118 - Masterslice integrated circuits

Abstract

A chip package includes a first interconnection scheme; a plurality of first metal contacts under and on the first interconnection scheme and at a bottom surface of the chip package; a first semiconductor IC chip over the first interconnection scheme; a first connector over the first interconnection scheme and at a same horizontal level as the first semiconductor IC chip, wherein the first connector comprises a first substrate and a plurality of first through vias vertically extending through the first substrate of the first connector; a first polymer layer over the first interconnection scheme, wherein the first polymer layer has a top surface coplanar with a top surface of the first semiconductor IC chip, a top surface of the first substrate of the first connector and a top surface of each of the plurality of first through vias; and a second interconnection scheme on the top surface of the first polymer layer, the top surface of the first semiconductor IC chip, the top surface of the first connector and the top surface of each of the plurality of first through vias, wherein the second interconnection scheme comprises a plurality of second metal contacts at a top surface of the chip package.

IPC Classes  ?

• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/498 - Leads on insulating substrates

Abstract

A three-dimensional programmable interconnection system based on a multi-chip package includes: a programmable metal bump or pad at a bottom of the multi-chip package; a first programmable interconnect provided by an interposer of the multi-chip package; a second programmable interconnect provided by the interposer; and a switch provided by a first semiconductor chip of the multi-chip package, wherein the switch is configured to control connection between the first and second programmable interconnects, wherein the programmable metal bump or pad couples to a second semiconductor chip of the multi-chip package through the switch and the first and second programmable interconnects, wherein the first and second semiconductor chips are over the interposer.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A multichip package includes: a chip package comprising a first IC chip, a polymer layer in a space beyond and extending from a sidewall of the first IC chip, a through package via in the polymer layer, an interconnection scheme under the first IC chip, polymer layer and through package via, and a metal bump under the interconnection scheme and at a bottom of the chip package, wherein the first IC chip comprises memory cells for storing data therein associated with resulting values for a look-up table (LUT) and a selection circuit comprising a first input data set for a logic operation and a second input data set associated with the data stored in the memory cells, wherein the selection circuit selects, in accordance with the first input data set, data from the second input data set as an output data for the logic operation; and a second IC chip over the chip package, wherein the second IC chip couples to the first IC chip through, in sequence, the through package via and interconnection scheme, wherein the second IC chip comprises a hard macro having an input data associated with the output data for the logic operation.

IPC Classes  ?

• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

A chip package includes a first integrated-circuit (IC) chip; a second integrated-circuit (IC) chip over the first integrated-circuit (IC) chip; a connector over the first integrated-circuit (IC) chip and on a same horizontal level as the second integrated-circuit (IC) chip, wherein the connector comprises a substrate over the first integrated-circuit (IC) chip and a plurality of through vias vertically extending through the substrate of the connector; a polymer layer over the first integrated-circuit (IC) chip, wherein the polymer layer has a portion between the second integrated-circuit (IC) chip and connector, wherein the polymer layer has a top surface coplanar with a top surface of the second integrated-circuit (IC) chip, a top surface of the substrate of the connector and a top surface of each of the plurality of through vias; and an interconnection scheme on the top surface of the polymer layer, the top surface of the second integrated-circuit (IC) chip, the top surface of the connector and the top surface of each of the plurality of through vias.

IPC Classes  ?

• H01L 23/528 - Layout of the interconnection structure
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 23/00 - Details of semiconductor or other solid state devices
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers

Abstract

A method for obtaining a probability in a 3D probability map, includes: obtaining at least one value of at least one parameter for each stop of a 3D moving window, wherein a first, second, third and fourth of the stops are partially overlapped, the first and second stops are shifted from each other by a distance equal to a first dimension of a computation voxel, the first and third stops are shifted from each other by a distance equal to a second dimension of the computation voxel, and the first and fourth stops are shifted from each other by a distance equal to a third dimension of the computation voxel; matching the at least one value to a classifier to obtain a first probability for each stop of the 3D moving window; and calculating a second probability for the computation voxel based on information associated with the first probabilities for the first through fourth stops.

IPC Classes  ?

• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
• G06T 7/00 - Image analysis
• G16H 30/40 - ICT specially adapted for the handling or processing of medical images for processing medical images, e.g. editing
• A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fieldsMeasuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
• A61B 6/03 - Computed tomography [CT]
• A61B 8/08 - Clinical applications
• A61B 10/00 - Instruments for taking body samples for diagnostic purposesOther methods or instruments for diagnosis, e.g. for vaccination diagnosis, sex determination or ovulation-period determinationThroat striking implements
• G06N 20/00 - Machine learning

Abstract

A multichip package comprising: a first chip package comprising a first semiconductor IC chip, a first polymer layer in a space beyond and extending from a sidewall of the first semiconductor IC chip, a first through package via in the first polymer layer, and a first interconnection scheme under the first semiconductor IC chip, first polymer layer and first through package via, wherein the first semiconductor IC chip comprises a plurality of volatile memory cells configured to store first data associated with a plurality of resulting values for a look-up table (LUT) and a selection circuit configured to select, in accordance with a first input data set thereof, a data from a second input data set thereof as an output data for the logic operation; a first metal bump under the first chip package; and a non-volatile memory IC chip over the first chip package, wherein the non-volatile memory IC chip comprises a plurality of first non-volatile memory cells configured to store second data associated with the plurality of resulting values for the look-up table (LUT), wherein the first data are associated with the second data.

IPC Classes  ?

• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables

Abstract

A chip package comprises an interposer; an FPGA IC chip over the interposer, wherein the FPGA IC chip comprises a programmable logic block configured to perform a logic operation on its inputs, wherein the programmable logic block comprises a look-up table configured to be provided with multiple resulting values of the logic operation on multiple combinations of the inputs of the programmable logic block respectively, wherein the programmable logic block is configured to select, in accordance with one of the combinations of its inputs, one from the resulting values into its output, and multiple non-volatile memory cells configured to save the resulting values respectively; multiple first metal bumps between the interposer and the FPGA IC chip; and an underfill between the interposer and the FPGA IC chip, wherein the underfill encloses the first metal bumps.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 27/11517 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H03K 19/21 - EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one inputCOINCIDENCE circuits, i.e. giving output only if all input signals are identical
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits

Abstract

A field-programmable-gate-array (FPGA) IC chip includes multiple first non-volatile memory cells in the FPGA IC chip, wherein the first non-volatile memory cells are configured to save multiple resulting values for a look-up table (LUT) of a programmable logic block of the FPGA IC chip, wherein the programmable logic block is configured to select, in accordance with its inputs, one from the resulting values into its output; and multiple second non-volatile memory cells in the FPGA IC chip, wherein the second non-volatile memory cells are configured to save multiple programming codes configured to control a switch of the FPGA IC chip.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/17724 - Structural details of logic blocks
• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• H01L 27/11517 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 43/08 - Magnetic-field-controlled resistors
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 27/11521 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/66 - Types of semiconductor device
• G11C 7/00 - Arrangements for writing information into, or reading information out from, a digital store
• H01L 43/10 - Selection of materials

Abstract

An expandable logic scheme based on a chip package, includes: an interconnection substrate comprising a set of data buses for use in an expandable interconnection scheme, wherein the set of data buses is divided into a plurality of data bus subsets; and a first field-programmable-gate-array (FPGA) integrated-circuit (IC) chip comprising a plurality of first I/O ports coupling to the set of data buses and at least one first I/O-port selection pad configured to select a first port from the plurality of first I/O ports in a first clock cycle to pass a first data between a first data bus subset of the plurality of data bus subsets and the first field-programmable-gate-array (FPGA) integrated-circuit (IC) chip.

IPC Classes  ?

• H03K 19/0175 - Coupling arrangementsInterface arrangements
• H03K 19/1776 - Structural details of configuration resources for memories
• G06F 30/34 - Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD]

Abstract

A three-dimensional programmable interconnection system based on a multi-chip package includes: a programmable metal bump or pad at a bottom of the multi-chip package; a first programmable interconnect provided by an interposer of the multi-chip package; a second programmable interconnect provided by the interposer; and a switch provided by a first semiconductor chip of the multi-chip package, wherein the switch is configured to control connection between the first and second programmable interconnects, wherein the programmable metal bump or pad couples to a second semiconductor chip of the multi-chip package through the switch and the first and second programmable interconnects, wherein the first and second semiconductor chips are over the interposer.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A field-programmable-gate-array (FPGA) integrated-circuit (IC) chip configured to perform a logic function based on a look-up table (LUT), includes: multiple non-volatile memory cells therein configured to store multiple resulting values of the look-up table (LUT); and a programmable logic block therein having multiple static-random-access-memory (SRAM) cells configured to store the resulting values passed from the non-volatile memory cells, wherein the programmable logic block is configured to select, in accordance with one of the combinations of its inputs, one from the resulting values stored in the static-random-access-memory (SRAM) cells into its output.

IPC Classes  ?

• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/0948 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET using CMOS
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• G11C 11/419 - Read-write [R-W] circuits
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• H01L 45/00 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
• G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H01L 27/11 - Static random access memory structures
• H01L 23/498 - Leads on insulating substrates
• H03K 19/21 - EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one inputCOINCIDENCE circuits, i.e. giving output only if all input signals are identical

Abstract

A field-programmable-gate-array (FPGA) IC chip includes multiple first non-volatile memory cells in the FPGA IC chip, wherein the first non-volatile memory cells are configured to save multiple resulting values for a look-up table (LUT) of a programmable logic block of the FPGA IC chip, wherein the programmable logic block is configured to select, in accordance with its inputs, one from the resulting values into its output; and multiple second non-volatile memory cells in the FPGA IC chip, wherein the second non-volatile memory cells are configured to save multiple programming codes configured to control a switch of the FPGA IC chip.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/66 - Types of semiconductor device
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 43/08 - Magnetic-field-controlled resistors
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 27/11517 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
• H03K 19/17724 - Structural details of logic blocks
• H01L 27/11521 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region
• G11C 7/00 - Arrangements for writing information into, or reading information out from, a digital store
• H01L 43/10 - Selection of materials

Abstract

A chip package comprises an interposer; an FPGA IC chip over the interposer, wherein the FPGA IC chip comprises a programmable logic block configured to perform a logic operation on its inputs, wherein the programmable logic block comprises a look-up table configured to be provided with multiple resulting values of the logic operation on multiple combinations of the inputs of the programmable logic block respectively, wherein the programmable logic block is configured to select, in accordance with one of the combinations of its inputs, one from the resulting values into its output, and multiple non-volatile memory cells configured to save the resulting values respectively; multiple first metal bumps between the interposer and the FPGA IC chip; and an underfill between the interposer and the FPGA IC chip, wherein the underfill encloses the first metal bumps.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• H01L 27/11517 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H03K 19/21 - EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one inputCOINCIDENCE circuits, i.e. giving output only if all input signals are identical

Abstract

A multi-chip package includes: a first semiconductor integrated-circuit (IC) chip; a second semiconductor integrated-circuit (IC) chip over and bonded to the first semiconductor integrated-circuit (IC) chip; a plurality of first metal posts over and coupling to the first semiconductor integrated-circuit (IC) chip, wherein the plurality of first metal posts are in a space beyond and extending from a sidewall of the second semiconductor integrated-circuit (IC) chip; and a first polymer layer over the first semiconductor integrated-circuit (IC) chip and in the space, wherein the plurality of first metal posts are in the first polymer layer, wherein a top surface of the first polymer layer, a top surface of the second semiconductor integrated-circuit (IC) chip and a top surface of each of the plurality of first metal posts are coplanar.

IPC Classes  ?

• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H03K 19/094 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors
• G11C 5/06 - Arrangements for interconnecting storage elements electrically, e.g. by wiring

Abstract

A multi-chip package includes a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip configured to perform a logic function based on a truth table, wherein the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip comprises multiple non-volatile memory cells therein configured to store multiple resulting values of the truth table, and a programmable logic block therein configured to select, in accordance with one of the combinations of its inputs, one from the resulting values into its output; and a memory chip coupling to the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip, wherein a data bit width between the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip and the memory chip is greater than or equal to 64.

IPC Classes  ?

• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/0948 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET using CMOS
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• G11C 11/419 - Read-write [R-W] circuits
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• H01L 45/00 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
• G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H01L 27/11 - Static random access memory structures
• H01L 23/498 - Leads on insulating substrates
• H03K 19/21 - EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one inputCOINCIDENCE circuits, i.e. giving output only if all input signals are identical

Abstract

A multi-chip package comprising an interconnection substrate; a first semiconductor IC chip over the interconnection substrate, wherein the first semiconductor IC chip comprises a first silicon substrate, a plurality of first metal vias passing through the first silicon substrate, a plurality of first transistors on a top surface of the first silicon substrate and a first interconnection scheme over the first silicon substrate, wherein the first interconnection scheme comprises a first interconnection metal layer over the first silicon substrate, a second interconnection metal layer over the first interconnection layer and the first silicon substrate and a first insulating dielectric layer over the first silicon substrate and between the first and second interconnection metal layers; a second semiconductor IC chip over and bonded to the first semiconductor IC chip; and a plurality of second metal vias over and coupling to the interconnection substrate, wherein the plurality of second metal vias are in a space extending from a sidewall of the first semiconductor IC chip.

IPC Classes  ?

• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H03K 19/17704 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H01L 23/00 - Details of semiconductor or other solid state devices
• H03K 19/1776 - Structural details of configuration resources for memories
• H01L 23/528 - Layout of the interconnection structure

Abstract

A multi-chip package comprising: an interconnection substrate comprising an interconnection bridge embedded in the interconnection substrate, and an interconnection scheme comprising a first interconnection metal layer, a second interconnection metal layer over the first interconnection layer and the interconnection bridge, and a polymer layer between the first and second interconnection metal layers, wherein the interconnection bridge is embedded in the interconnection scheme and has sidewalls surrounded by the polymer layer; a semiconductor IC chip over the interconnection substrate and across over an edge of the interconnection bridge; a memory chip over the interconnection substrate and across over an edge of the interconnection bridge, wherein the interconnection bridge comprises a plurality of metal interconnects configured for a data bus coupling the semiconductor IC chip to the memory chip, wherein a bitwidth of the data bus between the semiconductor IC chip and the memory chip is greater than or equal to 512.

IPC Classes  ?

• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H03K 19/17736 - Structural details of routing resources
• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H03K 19/17704 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

IPC Classes  ?

• G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/498 - Leads on insulating substrates
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/00 - Details of semiconductor or other solid state devices
• G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• H01L 45/00 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
• H01L 23/528 - Layout of the interconnection structure
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 43/02 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof - Details
• H01F 10/32 - Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
• H01L 43/10 - Selection of materials
• H01L 35/32 - SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR - Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermocouple forming the device
• H01L 35/08 - Structural details of the junction; Connections of leads non-detachable, e.g. cemented, sintered, soldered
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• G06N 3/063 - Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means

Abstract

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

IPC Classes  ?

• G06F 30/34 - Circuit design for reconfigurable circuits, e.g. field programmable gate arrays [FPGA] or programmable logic devices [PLD]
• H01L 27/11524 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region with cell select transistors, e.g. NAND
• H01L 27/112 - Read-only memory structures
• G06F 3/06 - Digital input from, or digital output to, record carriers
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• H03K 19/1776 - Structural details of configuration resources for memories
• G05B 19/042 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits

Abstract

A field-programmable-gate-array (FPGA) IC chip includes multiple first non-volatile memory cells in the FPGA IC chip, wherein the first non-volatile memory cells are configured to save multiple resulting values for a look-up table (LUT) of a programmable logic block of the FPGA IC chip, wherein the programmable logic block is configured to select, in accordance with its inputs, one from the resulting values into its output; and multiple second non-volatile memory cells in the FPGA IC chip, wherein the second non-volatile memory cells are configured to save multiple programming codes configured to control a switch of the FPGA IC chip.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/66 - Types of semiconductor device
• H03K 19/17724 - Structural details of logic blocks
• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• H01L 27/11517 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• H01L 43/08 - Magnetic-field-controlled resistors
• H01L 27/092 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
• H01L 27/11521 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region
• G11C 7/00 - Arrangements for writing information into, or reading information out from, a digital store
• H01L 43/10 - Selection of materials

Abstract

An expandable logic scheme based on a chip package, includes: an interconnection substrate comprising a set of data buses for use in an expandable interconnection scheme, wherein the set of data buses is divided into a plurality of data bus subsets; and a first field-programmable-gate-array (FPGA) integrated-circuit (IC) chip comprising a plurality of first I/O ports coupling to the set of data buses and at least one first I/O-port selection pad configured to select a first port from the plurality of first I/O ports in a first clock cycle to pass a first data between a first data bus subset of the plurality of data bus subsets and the first field-programmable-gate-array (FPGA) integrated-circuit (IC) chip.

IPC Classes  ?

• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H03K 19/0175 - Coupling arrangementsInterface arrangements
• H03K 19/1776 - Structural details of configuration resources for memories
• G06F 17/50 - Computer-aided design

Abstract

A method for obtaining a probability in a 3D probability map, includes: obtaining at least one value of at least one parameter for each stop of a 3D moving window, wherein a first, second, third and fourth of the stops are partially overlapped, the first and second stops are shifted from each other by a distance equal to a first dimension of a computation voxel, the first and third stops are shifted from each other by a distance equal to a second dimension of the computation voxel, and the first and fourth stops are shifted from each other by a distance equal to a third dimension of the computation voxel; matching the at least one value to a classifier to obtain a first probability for each stop of the 3D moving window; and calculating a second probability for the computation voxel based on information associated with the first probabilities for the first through fourth stops.

IPC Classes  ?

• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
• G06T 7/00 - Image analysis
• G16H 30/40 - ICT specially adapted for the handling or processing of medical images for processing medical images, e.g. editing
• A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fieldsMeasuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
• A61B 6/03 - Computed tomography [CT]
• A61B 8/08 - Clinical applications
• A61B 10/00 - Instruments for taking body samples for diagnostic purposesOther methods or instruments for diagnosis, e.g. for vaccination diagnosis, sex determination or ovulation-period determinationThroat striking implements
• G06N 20/00 - Machine learning

Abstract

A three-dimensional programmable interconnection system based on a multi-chip package includes: a programmable metal bump or pad at a bottom of the multi-chip package; a first programmable interconnect provided by an interposer of the multi-chip package; a second programmable interconnect provided by the interposer; and a switch provided by a first semiconductor chip of the multi-chip package, wherein the switch is configured to control connection between the first and second programmable interconnects, wherein the programmable metal bump or pad couples to a second semiconductor chip of the multi-chip package through the switch and the first and second programmable interconnects, wherein the first and second semiconductor chips are over the interposer.

IPC Classes  ?

• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

A field-programmable-gate-array (FPGA) integrated-circuit (IC) chip configured to perform a logic function based on a look-up table (LUT), includes: multiple non-volatile memory cells therein configured to store multiple resulting values of the look-up table (LUT); and a programmable logic block therein having multiple static-random-access-memory (SRAM) cells configured to store the resulting values passed from the non-volatile memory cells, wherein the programmable logic block is configured to select, in accordance with one of the combinations of its inputs, one from the resulting values stored in the static-random-access-memory (SRAM) cells into its output.

IPC Classes  ?

• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/0948 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET using CMOS
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• G11C 11/419 - Read-write [R-W] circuits
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• H01L 45/00 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
• G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables
• H01L 27/11 - Static random access memory structures
• H01L 23/498 - Leads on insulating substrates
• H03K 19/21 - EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one inputCOINCIDENCE circuits, i.e. giving output only if all input signals are identical

Abstract

A multi-chip package includes a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip configured to perform a logic function based on a truth table, wherein the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip comprises multiple non-volatile memory cells therein configured to store multiple resulting values of the truth table, and a programmable logic block therein configured to select, in accordance with one of the combinations of its inputs, one from the resulting values into its output; and a memory chip coupling to the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip, wherein a data bit width between the field-programmable-gate-array (FPGA) integrated-circuit (IC) chip and the memory chip is greater than or equal to 64.

IPC Classes  ?

• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H03K 19/0948 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET using CMOS
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• G11C 11/412 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using electric elements using semiconductor devices using transistors forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
• G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• G11C 11/419 - Read-write [R-W] circuits
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• H01L 45/00 - Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
• G11C 14/00 - Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Abstract

A chip package comprises an interposer; an FPGA IC chip over the interposer, wherein the FPGA IC chip comprises a programmable logic block configured to perform a logic operation on its inputs, wherein the programmable logic block comprises a look-up table configured to be provided with multiple resulting values of the logic operation on multiple combinations of the inputs of the programmable logic block respectively, wherein the programmable logic block is configured to select, in accordance with one of the combinations of its inputs, one from the resulting values into its output, and multiple non-volatile memory cells configured to save the resulting values respectively; multiple first metal bumps between the interposer and the FPGA IC chip; and an underfill between the interposer and the FPGA IC chip, wherein the underfill encloses the first metal bumps.

IPC Classes  ?

• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H03K 19/173 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 27/11517 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• H03K 19/21 - EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one inputCOINCIDENCE circuits, i.e. giving output only if all input signals are identical
• H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
• H03K 19/1776 - Structural details of configuration resources for memories
• H03K 19/17728 - Reconfigurable logic blocks, e.g. lookup tables

Abstract

A chip package includes an interposer comprising a silicon substrate, multiple metal vias passing through the silicon substrate, a first interconnection metal layer over the silicon substrate, a second interconnection metal layer over the silicon substrate, and an insulating dielectric layer over the silicon substrate and between the first and second interconnection metal layers; a field-programmable-gate-array (FPGA) integrated-circuit (IC) chip over the interposer; multiple first metal bumps between the interposer and the FPGA IC chip; a first underfill between the interposer and the FPGA IC chip, wherein the first underfill encloses the first metal bumps; a non-volatile memory (NVM) IC chip over the interposer; multiple second metal bumps between the interposer and the NVM IC chip; and a second underfill between the interposer and the NVM IC chip, wherein the second underfill encloses the second metal bumps.

IPC Classes  ?

• H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
• H03K 19/17736 - Structural details of routing resources
• H03K 19/17796 - Structural details for adapting physical parameters for physical disposition of blocks
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/498 - Leads on insulating substrates
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/528 - Layout of the interconnection structure
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 27/118 - Masterslice integrated circuits
• H01L 23/14 - Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties

Abstract

A field-programmable-gate-array (FPGA) IC chip includes multiple first non-volatile memory cells in the FPGA IC chip, wherein the first non-volatile memory cells are configured to save multiple resulting values for a look-up table (LUT) of a programmable logic block of the FPGA IC chip, wherein the programmable logic block is configured to select, in accordance with its inputs, one from the resulting values into its output; and multiple second non-volatile memory cells in the FPGA IC chip, wherein the second non-volatile memory cells are configured to save multiple programming codes configured to control a switch of the FPGA IC chip.

IPC Classes  ?

• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
• H01L 27/22 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate using similar magnetic field effects
• H01L 27/24 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
• H01L 27/11517 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate
• H01L 43/08 - Magnetic-field-controlled resistors
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 27/11521 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region
• H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
• G11C 7/00 - Arrangements for writing information into, or reading information out from, a digital store
• H01L 43/10 - Selection of materials

Abstract

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

IPC Classes  ?

• G06F 17/50 - Computer-aided design
• G06F 3/06 - Digital input from, or digital output to, record carriers
• H01L 27/11524 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with floating gate characterised by the memory core region with cell select transistors, e.g. NAND
• H01L 27/112 - Read-only memory structures
• G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
• H03K 19/177 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits using specified components using elementary logic circuits as components arranged in matrix form
• G05B 19/042 - Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors