Abstract

A method of manufacturing a sealed fluid-filled compartment including the following steps: (a) forming at least a first cavity from a first face of a first substrate; (b) positioning a second face of a second substrate opposite the first face of said first substrate; (c) at least partially filling said at least one first cavity with a fluid; (d) bonding said first face of said first substrate to said second face of said second substrate by annealing and simultaneously pressing said first and second substrates together.

IPC Classes  ?

• C03B 25/02 - Annealing glass products in a discontinuous way
• H05K 7/20 - Modifications to facilitate cooling, ventilating, or heating

Abstract

A method and a device for analyzing defects by means of reflectometry which are based on estimating a transfer function at a frequency resolution which is larger than that normally allowed by taking account of the limitations which are intrinsic to analog-to-digital and digital-to-analog converters and notably of their sampling frequencies.

IPC Classes  ?

• G01R 31/11 - Locating faults in cables, transmission lines, or networks using pulse-reflection methods
• G01R 31/08 - Locating faults in cables, transmission lines, or networks

Abstract

The invention relates to a method for manufacturing an optoelectronic device (1) with a diode array (20), including the following steps: producing an electret layer (30) having conversion zones (Zc) separated two-by-two by a spacing zone (Ze) with zero surface potential, where each conversion zone (Zc) is formed of a plurality of so-called polarized elementary zones (32) with non-zero surface potential, spaced apart two-by-two by a so-called non-polarized elementary zone (33) with zero surface potential, such that the conversion zone (Zc) has a structured surface potential; producing color conversion pads (P), by placing the electret layer (30) in contact with a colloidal solution(S) containing photoluminescent particles (p).

IPC Classes  ?

• H10H 29/851 - Wavelength conversion means
• H10H 29/01 - Manufacture or treatment

Abstract

The present description relates to a communication hub circuit comprising: two ports (P1) for exchanging data with another communication hub circuit (102); a port (P2) for exchanging data with a computing microchip (106); a port (P3) for exchanging data with an accelerator microchip (108); an interface (ITm) for exchanging data with a memory circuit (110); an interface (ITs, ITe) for exchanging data with a sensor (104); a data processing circuit (PUs); a network-on-chip (NOC) for transferring data between elements of the communication hub circuit.

IPC Classes  ?

• G06F 13/40 - Bus structure
• G06F 12/0817 - Cache consistency protocols using directory methods

Abstract

A device for manipulating items contained in a glove box while forming a double scaled wall, and associated glove box. The scaling of the open end of a protective sleeve can be achieved when a robotic arm or a slave arm is inserted into it, within a glove box.

IPC Classes  ?

• B25J 21/02 - Glove-boxes, i.e. chambers in which manipulations are performed by the human hands in gloves built into the chamber wallsGloves therefor
• B25J 1/10 - Sleeve and pivot mountings therefor

Abstract

A non-volatile memory structure formed of a stack including a lower electrode and an upper electrode and at least one active material between the lower electrode and the upper electrode, the stack of the non-volatile memory structure lining the side walls as well as a bottom of a trench and of a hole located in an extension of the trench, the hole and the trench being arranged in the insulating thickness, the stack being disposed at the bottom of the hole on a first conductive line.

IPC Classes  ?

• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices

Abstract

A method for characterizing a tubular object by ultrasonic imaging includes: acquiring a plurality of ultrasonic signals originating from the reflection of an ultrasonic field transmitted by the transducer in a region of interest in a transverse cross-sectional plane of the object, for different positions of the transducer relative to the region, all of the ultrasonic signals forming an ultrasonic image of the region; for each signal corresponding to a vector of the image, applying a predetermined first filter to the signal; selecting, from all of the signals, the signal for which the result of the filter contains the extremum with the highest absolute value, and plotting the abscissa of this extremum; and determining the centre of the object from the abscissa plotted and the velocity of the ultrasonic signal.

IPC Classes  ?

• A61B 8/08 - Clinical applications
• A61B 8/00 - Diagnosis using ultrasonic, sonic or infrasonic waves

Abstract

A radar device includes a transmit channel for generating a radar signal; and a receive channel for receiving and demodulating echoes; the channels including a shared local oscillator having a frequency that varies as a function of a control signal; a generator of the control signal, so that the frequency of the local oscillator varies in time linearly or stepwise linearly; and means for generating transmit pulses and demodulation pulses; the receive channel including a mixer for receiving as input the echoes and the demodulation pulses and delivering as output a mixing signal, and a low-pass filter for extracting the first harmonic component of the mixing signal and an analog-to-digital converter.

IPC Classes  ?

• G01S 7/32 - Shaping echo pulse signalsDeriving non-pulse signals from echo pulse signals
• G01S 7/282 - Transmitters
• G01S 13/26 - Systems for measuring distance only using transmission of interrupted, pulse modulated waves wherein the transmitted pulses use a frequency- or phase-modulated carrier wave

Abstract

One aspect of the invention relates to a distributed feedback light source (101) comprising a stack of layers (103) extending in parallel to a substrate (102), the source (101) also comprising a first metal layer (111) extending between the substrate (102) and the stack (103).

IPC Classes  ?

• H01S 5/12 - Construction or shape of the optical resonator the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
• H01S 5/20 - Structure or shape of the semiconductor body to guide the optical wave

Abstract

An electromagnetic transducer intended to measure two-dimensional velocity components of a flow of an electrically conductive fluid. An electromagnetic transducer intended to measure the two-dimensional velocity components of a flow of an electrically conductive fluid, including a cylindrical metal tube forming a core with high magnetic permeability, which tube extends along a central axis (Z), including a central portion and two end portions, on either side of the central portion, each including two bosses, diametrically opposed to one another relative to the central axis (Z) and each delimiting a flat surface, parallel to the central axis (Z); an electrical coil, called primary coil, wound around the central portion of the tube; four electrical coils, called receiver coils, each wound around one of the flat surfaces, or four Hall effect sensors, each arranged on one of the flat surfaces.

IPC Classes  ?

• G01F 1/58 - Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using electric or magnetic effects by electromagnetic flowmeters

Abstract

An optoelectronic device, comprising a stack including a plurality of light-emitting diodes disposed at a distance from one another, and a plurality of electrically conductive terminals arranged between the diodes, and a light confinement layer extending over the stack and comprising reflective walls defining between them, spaces located to the right of each diode. Further, the confinement layer includes the porous alumina in at least one of the spaces, the porous alumina having, in at least one space, preferably in at least two of the spaces, even in each space, from among the at least some spaces, at least two open pores on a first face of the confinement layer which is located opposite the stack. The optical crosstalk phenomena are advantageously reduced.

IPC Classes  ?

• H10H 29/855 - Optical field-shaping means, e.g. lenses
• H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
• H10H 29/01 - Manufacture or treatment
• H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
• H10H 29/851 - Wavelength conversion means
• H10H 29/856 - Reflecting means

Abstract

The present disclosure relates to a method for preparing an anti-ferroelectric multilayer device, in particular an ultrafine device, comprising an alternation of at least one layer of a first type and at least one layer of a second type.

IPC Classes  ?

• H10B 53/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region

Abstract

An electronic circuit includes an output node adapted to supply an output current through a load circuit; a plurality of elementary source branches connected in parallel; a bias circuit comprising: a current mirror formed by a first bias branch carrying a reference current and a second bias branch; the second bias branch comprises: a follower transistor, a first bias cascode transistor and a second bias current mirror transistor; a first amplifier circuit configured to copy the electrical potential of the output node onto the drain of the first bias cascode transistor; a second amplifier circuit configured to generate a voltage on the gate of the first bias cascode transistor in order to regulate the voltage of its source to a predefined setpoint voltage.

IPC Classes  ?

• H03M 1/76 - Simultaneous conversion using switching tree
• G02F 1/29 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the position or the direction of light beams, i.e. deflection

Abstract

One aspect of the invention relates to an integrated circuit (1) comprising: a copper via (42); and a non-volatile memory (5), electrically connected to the copper via (42), the integrated circuit is remarkable in that it comprises a copper diffusion barrier (6), based on Ta, Ti or Co, extending as a layer against the copper via, the non-volatile memory being connected to the via through the diffusion barrier.

IPC Classes  ?

• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10B 63/10 - Phase change RAM [PCRAM, PRAM] devices

Abstract

A BLE telecommunication method, BLE standing for Bluetooth Low Energy, is implemented by a first telecommunication device, frames TR_i, i=n−N to n, including a first field for current data and N second fields for data transmitted in the first field of previously transmitted frames; including, during construction of frame TR_n, inserting: into the first data field of frame TR_n, the dataset D_n; into the jth second data field of frame TR_n, j=1 to N, the dataset D_(n−j) previously transmitted in the first field of frame TR_(n−j); the channel selected for transmission of frame TR_n−j being the channel succeeding, in the defined loop, the channel that was selected for transmission of frame TR_(n−j−1) at transmission time t_(n−j−1), j=0 to N.

IPC Classes  ?

• H04L 5/00 - Arrangements affording multiple use of the transmission path
• H04W 4/80 - Services using short range communication, e.g. near-field communication [NFC], radio-frequency identification [RFID] or low energy communication
• H04W 72/0453 - Resources in frequency domain, e.g. a carrier in FDMA

Abstract

A method for manufacturing an OxRAM resistive memory cell, includes forming a TiN lower electrode, firstly implanting Si atoms into the lower electrode with a first implantation dose and a first implantation acceleration voltage, the first implantation dose being strictly positive and strictly lower than 0.7·1014 cm−2, secondly implanting Si atoms into the lower electrode with a second implantation dose and a second implantation acceleration voltage strictly greater than the first implantation acceleration voltage, the second implantation dose being strictly positive and strictly lower than 0.6·1014 cm−2, the first and second acceleration voltages being selected to have an implantation profile following the first and second implantations having a maximum Si concentration at a depth of between 1 and 3 nm from the upper surface of the lower electrode, depositing an active layer onto the lower electrode implanted, depositing an upper electrode onto the active layer.

IPC Classes  ?

• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

A protective sheath for inserting a manipulator arm into a glovebox, including a sealed coupling for removably fastening and connecting the manipulator arm, which is engaged in the protective sheath, to an effector, which is housed in the confined enclosure of a glovebox.

IPC Classes  ?

• B25J 19/00 - Accessories fitted to manipulators, e.g. for monitoring, for viewingSafety devices combined with or specially adapted for use in connection with manipulators
• B25J 21/00 - Chambers provided with manipulation devices
• F16D 3/84 - Shrouds, e.g. casings, coversSealing means specially adapted therefor

Abstract

An installation (10) comprising: - an electrolysis unit (24) for receiving power (26) and steam (28), and for producing a hydrogen rich gas (30), - a gasification unit (34) for receiving wastes (16) containing organic matter, and an oxygen rich gas (32B), and for producing syngas (38), - a catalytic methanation unit (44) for receiving a CO2 rich gas (14), said hydrogen rich gas and said syngas, and for producing a methane rich gas (18), - a steam generation unit (50) for receiving heat (54) from the catalytic methanation unit (44), and producing said steam. The installation is adapted for switching at least between a first operating mode, in which said power is intended to be fully renewable, and a second operating mode, in which said power is at a lower level and is intended to be renewable and/or from an electricity grid (58).

IPC Classes  ?

• C10L 3/08 - Production of synthetic natural gas
• C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen

Abstract

The present description relates to an electronic device (100) for capturing and displaying images, comprising a plurality of pixels (PIX) formed in and on a semiconductor substrate (101), each pixel comprising: – a detection element (103) for detecting X-rays (105), located on the side of a first face (101F) of the semiconductor substrate (101); – an emission element (107) for emitting visible light (109), located on the side of a second face (101R) of the semiconductor substrate, opposite the first face; and – a circuit located in and on the semiconductor substrate and connecting the detection element to the emission element, the device (100) not having a pixel (PIX) control circuit external to the pixels (PIX).

IPC Classes  ?

• H04N 25/30 - Circuitry of solid-state image sensors [SSIS]Control thereof for transforming X-rays into image signals
• H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
• H04N 7/14 - Systems for two-way working
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters

Abstract

The present description relates to an electronic device (100) for capturing and displaying images, comprising a plurality of pixels (PIX) formed in and on a semiconductor substrate (101), each pixel comprising: – a detection element (103) for detecting infrared radiation (105), located on the side of a first face (101F) of the semiconductor substrate (101); – an emission element (107) for emitting visible light (109), located on the side of a second face (101R) of the semiconductor substrate, opposite the first face; and – a circuit located in and on the semiconductor substrate and connecting the detection element to the emission element, the device (100) not having a pixel (PIX) control circuit external to the pixels (PIX).

IPC Classes  ?

• H04N 25/20 - Circuitry of solid-state image sensors [SSIS]Control thereof for transforming only infrared radiation into image signals
• H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
• H04N 7/14 - Systems for two-way working
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H10K 59/65 - OLEDs integrated with inorganic image sensors
• H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
• H04N 25/773 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]

Abstract

The present description relates to an electronic device (100) for capturing and displaying images, comprising a plurality of pixels (PIX) formed in and on a semiconductor substrate (101), each pixel comprising: – a detection element (103) for detecting first radiation (105), located on the side of a first face (101F) of the semiconductor substrate (101); – an emission element (107) for emitting second radiation (109), located on the side of a second face (101R) of the semiconductor substrate, opposite the first face; and – a circuit located in and on the semiconductor substrate and connecting the detection element to the emission element, the device (100) not having a pixel (PIX) control circuit external to the pixels (PIX).

IPC Classes  ?

• H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
• H04N 7/14 - Systems for two-way working
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
• H04N 25/773 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]

Abstract

iiiii) in order to cancel out variations of the continuous component of the optical signal reflected by the measurement Bragg grating with which it is associated.

IPC Classes  ?

• G01N 29/24 - Probes
• G01H 9/00 - Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by using radiation-sensitive means, e.g. optical means
• G01N 29/32 - Arrangements for suppressing undesired influences, e.g. temperature or pressure variations
• G01N 29/34 - Generating the ultrasonic, sonic or infrasonic waves
• G01N 29/42 - Detecting the response signal by frequency filtering
• G02B 6/02 - Optical fibres with cladding
• G01D 5/353 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre

Abstract

The invention relates to a method for purifying a battery-electrode active material, comprising the following steps: a) providing an active material to be purified, wherein the active material to be purified comprises a metal oxide, aluminum impurities and copper impurities, b) dissolving the aluminum impurities by immersing the active material to be purified in a soda solution at a concentration selected at an effective value to achieve dissolution of the aluminum impurities, and c) dissolving the copper impurities by immersing the active material to be purified in an ammonia solution having an effective value to achieve dissolution of the copper impurities, whereby a purified active material is obtained. The invention also relates to a method for regenerating a spent battery-electrode active material that employs this purification method.

IPC Classes  ?

• H01M 10/54 - Reclaiming serviceable parts of waste accumulators
• C22B 3/12 - Extraction of metal compounds from ores or concentrates by wet processes by leaching in inorganic alkaline solutions
• C22B 3/14 - Extraction of metal compounds from ores or concentrates by wet processes by leaching in inorganic alkaline solutions containing ammonia or ammonium salts
• C22B 7/00 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof
• C22B 15/00 - Obtaining copper
• C22B 21/00 - Obtaining aluminium

Abstract

The invention relates to a method for transferring chips onto a receiver substrate from tiles arranged on a support substrate, comprising: - forming a substrate (10), referred to as the pseudo-donor substrate, comprising the support substrate (2) and the tiles (1), wherein two adjacent tiles are spaced apart by a first distance (d1), - carrying out chemical mechanical polishing on the tiles, - forming a weakened zone in at least one portion of the tiles so as to delimit a respective chip, - bonding the pseudo-donor substrate to the receiver substrate via the tiles, - detaching the tiles along the weakened zone so as to transfer a respective chip onto the receiver substrate, two adjacent chips being spaced apart by a second distance greater than the first distance (d1), - before the bonding step, locally roughening the surface of the tiles and/or the receiver substrate to make regions of the surface unsuitable for bonding, so as to prevent the chips from being transferred in said regions.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Abstract

The invention relates to a memory device including a plurality of memory points. The device has a plurality of first electrodes and a plurality of second electrodes, each second electrode being located at least partially facing a first electrode. The device also includes an active layer extending continuously between the plurality of first electrodes and the plurality of second electrodes. Each first electrode, a second electrode being located at least partially facing said first electrode, and an active layer portion extending between the first electrode and the second electrode together form a memory point.

IPC Classes  ?

• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching

Abstract

A driving device for a converter from an input voltage to an output voltage, comprising a resonator having an oscillation frequency and successive resonance cycles, and a plurality of switches connected to the resonator. The driving device includes a module for measuring a regulation variable representative of the resonator; a module for controlling a switching of the switches, following a plurality of phases during a resonance cycle, each phase resulting from the closing of at least one switch and the opening of the other switches; and a module for generating a reference triangular signal, regularly synchronized with the regulation variable, a characteristic variable of said triangular signal depending on the oscillation frequency of the resonator. The control module controls at least one of the switches based on a comparison with the reference signal.

IPC Classes  ?

• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
• H02M 3/00 - Conversion of DC power input into DC power output

Abstract

The invention relates to a sensor, including: a planar entry guide comprising a first exit face and a planar transmission exit guide comprising a second entry face, a Fabry-Pérot cavity configured to accommodate a fluid, and delimited by the first exit face of the planar entry guide and by the second entry face of the planar transmission exit guide, a planar reflection exit guide optically coupled to the planar entry guide by the Fabry-Pérot cavity, including an optical axis at the first face forming an acute opening angle with an optical axis at the first face of the planar entry guide, the Fabry-Pérot being arranged so that a normal to the first face constitutes a bisector of the opening angle.

IPC Classes  ?

• G01N 21/41 - RefractivityPhase-affecting properties, e.g. optical path length
• G01N 21/45 - RefractivityPhase-affecting properties, e.g. optical path length using interferometric methodsRefractivityPhase-affecting properties, e.g. optical path length using Schlieren methods

Abstract

Power module (1000.1, 1000.2), comprising 2n switches (102) intended to form n switching cells between a first electrical contact (104.1, 104.2) and n second electrical contacts (106.1-106.3), n being greater than or equal to 2, each of the second contacts being coupled to two of the switches, comprising a circuit for driving the switches, and wherein: the switches are juxtaposed two by two; each of the cells is formed by two first switches coupled to different, juxtaposed second contacts, and by two second switches each coupled to one of the different second contacts; the driver circuit is configured to control the switches so that, at the switching of each of the switching cells, one of the second switches is turned off, after which one of the first switches is turned on, after the other first switch is turned off, and then the other second switch is turned on.

IPC Classes  ?

• H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
• H02M 7/00 - Conversion of AC power input into DC power outputConversion of DC power input into AC power output
• H02M 7/217 - Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 7/539 - Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency

Abstract

The invention relates to a method of manufacturing a two- or three-dimensional part having a composite architecture with at least two different micro-lattices connected to each other, comprising the following steps: performing (100) a computer-implemented design step comprising the following steps: A) defining (100A) a domain representing said part to be manufactured, then defining a first sub-domain for a first micro-lattice and a second sub-domain, complementary to the first sub-domain, to delimit a second micro-lattice different from the first micro-lattice; B) defining (100B), over the whole domain, the coordinates of the generating centres for the two micro-lattices, C) defining (100C) the first micro-lattice D) defining (100D) the second micro-lattice E) connecting (100E) the second micro-lattice to the first micro-lattice. the design step also defining a shape and associated transverse dimensions for each micro-beam, and then: manufacturing (200) the architecture designed in this way.

IPC Classes  ?

• B29C 64/386 - Data acquisition or data processing for additive manufacturing
• B33Y 50/00 - Data acquisition or data processing for additive manufacturing
• B33Y 80/00 - Products made by additive manufacturing
• G06F 30/12 - Geometric CAD characterised by design entry means specially adapted for CAD, e.g. graphical user interfaces [GUI] specially adapted for CAD

Abstract

A method is provided for routing a data flow in a time-sensitive deterministic network, in order to route the packets of a data flow from a sender terminal to a receiver terminal, the network including switches for transmitting the packets, the switches being configured to implement predefined transmission scheduling over repeated time cycles having fixed-length time slots. The routing method uses the latency of a path as a metric to compute the k shortest paths between a sender terminal and a receiver terminal, and then, for each path, determines, for each switch located on this path, a tolerance interval that defines the amount of time for which the packets of a flow are able to wait at the switch before being transferred to the following switch, without exceeding the deadline for arrival of each packet of the flow at its destination, in order to reserve available slots.

IPC Classes  ?

• H04L 43/0852 - Delays
• H04L 45/121 - Shortest path evaluation by minimising delays
• H04L 47/2425 - Traffic characterised by specific attributes, e.g. priority or QoS for supporting services specification, e.g. SLA

Abstract

This computer server comprises: a database of computer files; a management module for receiving a request containing a first identifier of a client equipment and a second identifier of a file in the database, the second identifier included in the request having been encrypted via a homomorphic encryption algorithm; then for applying a homomorphic operation to the request to deliver a ciphertext of the file; and a masking module for receiving the ciphertext of the file; for generating a mask; for delivering a ciphertext of a combination of the file and the mask; and for transmitting the mask to a secure client enclave included in the client equipment, the enclave being able to receive the combination of the file and the mask, then to remove the mask for implementation of the file.

IPC Classes  ?

• H04L 9/00 - Arrangements for secret or secure communicationsNetwork security protocols

Abstract

A method for characterising an object using an ultrasound probe, the method including the following steps of: carrying out several iterations of the following steps of: i. transmitting an ultrasound field having an aperture with a given size; ii. measuring an echo of the ultrasound field following reflection on a zone of interest of an object to be imaged; iii. modifying, for each new iteration, the size of the aperture of the ultrasound field; recording, for at least one point of interest in the zone of interest, the associated time-of-flight on the measurement of the echo; determining, based on the time-of-flight measurements, a variation model of the times-of-flight as a function of the size of the aperture of the ultrasound field; extrapolating the time-of-flight of the point of interest for an aperture size tending towards 0 based on said model.

IPC Classes  ?

• A61B 8/08 - Clinical applications
• A61B 8/00 - Diagnosis using ultrasonic, sonic or infrasonic waves

Abstract

The present disclosure relates to a method for preparing a ferroelectric multilayer device, in particular an ultrafine device, comprising an alternation of at least one layer of a first type and at least one layer of a second type.

IPC Classes  ?

• H10B 53/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region

Abstract

This device for controlling a converter including a resonator and several switches, comprises: a chain for measuring a control variable; a chain for controlling switching of the switches, in order to alternate phases with substantially constant voltage and substantially constant load at the terminals of the resonator, the control chain comprising a loop for regulating a switching instant of a switch; a synchronisation module for simultaneously sending a measurement command to the measurement chain and a control command to the control chain, the time taken for the measurement command to be implemented by the measurement chain is less than the time taken for the control command to be implemented by the control chain, so that the control variable is measured before the switch is switched.

IPC Classes  ?

• H02M 1/00 - Details of apparatus for conversion
• H02M 3/158 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load

Abstract

An exoskeleton upper limb includes a frame and a connection interface movably mounted relative to the frame to perform a second rotation and a third rotation. The second rotation is actuated by a first kinematic chain of actuation including a first actuator. The third rotation is actuated by a second kinematic chain of actuation including a second actuator. The first kinematic chain includes a first connecting rod and/or the second kinematic chain includes a second connecting rod.

IPC Classes  ?

• A61H 1/02 - Stretching or bending apparatus for exercising

Abstract

This electronic circuit implements calculation operations each providing a binary output, and comprises word lines; pairs of complementary bit lines; source lines; a set of memory cells organized according to a matrix including rows and columns, the memory cells of a same row being selectable by a word line, the memory cells of a same column being connected to a pair of complementary bit lines and to a source line; and a reading device implemented during each calculation operation. Each memory cell comprises two memristors and two switches. This electronic circuit implements calculation operations each providing a binary output, and comprises word lines; pairs of complementary bit lines; source lines; a set of memory cells organized according to a matrix including rows and columns, the memory cells of a same row being selectable by a word line, the memory cells of a same column being connected to a pair of complementary bit lines and to a source line; and a reading device implemented during each calculation operation. Each memory cell comprises two memristors and two switches. The reading device includes: a logic unit for each column, each being configured to perform a logic operation presenting a switching between a low value and a high value depending solely on the value of the input of the logic unit which is connected to a respective source line during said calculation operation, a module for converting a number of high or low values at the output of the logic units into an intermediate value dependent on said number of high/low values, the latter being an electrical value the variation of which over time depends on a time constant which is a function of said number of high/low values, and a comparison module for comparing the intermediate value with a reference value and for outputting a single-bit digital signal dependent on the comparison.

IPC Classes  ?

• G06N 3/063 - Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means

Abstract

The invention relates to a method for transferring a thin film onto a support substrate, which comprises: providing a bonded assembly that comprises a donor substrate and the support substrate, assembled by direct bonding at their respective front faces, following a bonding interface, the bonded assembly having a local unbonded area within this bonding interface, the donor substrate further comprising a buried brittle plane; separating along the buried brittle plane, initiated at the local unbonded area after microcrack growth in said plane by thermal activation, the separation resulting in the transfer of a thin film from the donor substrate to the support substrate. The method is characterised in that the local unbonded area is generated solely by a roughened area, produced deliberately on at least one of the front faces of the donor and support substrates prior to assembly, free of topology and having a predetermined roughness with an amplitude of between 0.5 nm RMS and 60.0 nm RMS.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Abstract

The invention relates to a support structure for an agrivoltaic system (1), comprising a frame (3) and movement means (4) mounted on the frame (3) in order to allow the support structure (2) to move over the ground (5), wherein the frame (3) is suitable for resting on the ground (5) via the movement means (4). The support structure comprises an anchoring member (8) configured to be driven into the ground (5) and/or to be secured to a complementary anchoring member (9) driven into the ground (5). The anchoring member (8) is movable between a transport position, in which the anchoring member (8) is at a predefined distance from the ground (5), and an anchoring position, in which the anchoring member (8) is moved closer to the ground (5) relative to the transport position, with a view to being driven into the ground (5) and/or secured to the complementary anchoring member (9).

IPC Classes  ?

• H02S 20/10 - Supporting structures directly fixed to the ground
• F24S 25/617 - Elements driven into the ground, e.g. anchor-pilesFoundations for supporting elementsConnectors for connecting supporting structures to the ground or to flat horizontal surfaces
• F24S 25/70 - Arrangement of stationary mountings or supports for solar heat collector modules with means for adjusting the final position or orientation of supporting elements in relation to each other or to a mounting surfaceArrangement of stationary mountings or supports for solar heat collector modules with means for compensating mounting tolerances
• F24S 30/425 - Horizontal axis
• H02S 20/30 - Supporting structures being movable or adjustable, e.g. for angle adjustment

Abstract

1,i2,i1,i1,i2,i2,i2,i1,i1,i2,i1,i2,i1,i2,i2,i.

IPC Classes  ?

• G01N 29/32 - Arrangements for suppressing undesired influences, e.g. temperature or pressure variations
• G01N 29/50 - Processing the detected response signal using auto-correlation techniques or cross-correlation techniques

Abstract

The present description relates to an electronic device (100) comprising: – a die-bonding substrate (101); – a first integrated circuit chip (105), connected to the die-bonding substrate by a first set of solder bumps (109); and – at least one second integrated circuit chip (105), connected to the die-bonding substrate by a second set of solder bumps (109) distinct from the first set of solder bumps, wherein one of the solder bumps of the first and second sets has a height different from that of at least one other solder bump of the first and second sets, so that a face (105T) of the first integrated circuit chip facing away from the die-bonding substrate and a face (105T) of the second integrated circuit chip facing away from the die-bonding substrate are coplanar.

IPC Classes  ?

• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group

Abstract

The invention relates to a cell culture device (10, 10a, 10b) comprising - a culture chamber (15, 15a; 15b) comprising a cell culture medium (25), - a plurality of cell culture supports (30, 30a; 30b) present in the cell culture medium (25) contained in the culture chamber (15, 15a; 15b), the cell culture supports (30, 30a; 30b) having a density different from that of the cell culture medium (25) such that these cell culture supports (30, 30a; 30b) are located at an interface (27) at least constituted on one side by the cell culture medium (25), at least one of the cell culture supports (30, 30a; 30b) carrying adherent cells (C), and - a system for moving the cell culture supports (30, 30a; 30b) along the interface (27).

IPC Classes  ?

• C12M 1/12 - Apparatus for enzymology or microbiology with sterilisation, filtration, or dialysis means
• C12M 1/26 - Inoculator or sampler
• C12M 1/00 - Apparatus for enzymology or microbiology
• C12M 1/34 - Measuring or testing with condition measuring or sensing means, e.g. colony counters

Abstract

The present description relates to an electronic device (100) for capturing and displaying images, comprising a plurality of pixels (PIX) formed in and on a semiconductor substrate (101), each pixel comprising: – an organic and/or quantum dot-based detection element (103) for detecting infrared radiation (105), located on the side of a first face (101F) of the semiconductor substrate (101); – an emission element (107) for emitting visible light (109), located on the side of a second face (101R) of the semiconductor substrate, opposite the first face; and – a circuit located in and on the semiconductor substrate and connecting the detection element to the emission element, the device (100) not having a pixel (PIX) control circuit external to the pixels (PIX).

IPC Classes  ?

• H04N 25/20 - Circuitry of solid-state image sensors [SSIS]Control thereof for transforming only infrared radiation into image signals
• H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
• H04N 7/14 - Systems for two-way working
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
• H10K 59/65 - OLEDs integrated with inorganic image sensors
• H10K 39/34 - Organic image sensors integrated with organic light-emitting diodes [OLED]
• H10K 59/90 - Assemblies of multiple devices comprising at least one organic light-emitting element
• H04N 25/772 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
• H04N 25/773 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]

Abstract

The present description relates to a device comprising first (12) and second (14) filters, the first filter (12) comprising a first region (20) made of a first piezoelectric material, the second filter (14) comprising a second region (22) made of a second piezoelectric material, the first and second materials being different and the first (20) and second (22) regions being on the same substrate.

IPC Classes  ?

• H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
• H03H 1/00 - Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
• H03H 9/02 - Networks comprising electromechanical or electro-acoustic elementsElectromechanical resonators Details

Abstract

An eye lens dosimeter (1) comprising: - a head (3) configured to accommodate an ionizing radiation detector, and - a rod (9), the rod (9) comprising: - a metal wire, and - a sheath surrounding the metal wire.

IPC Classes  ?

• G01T 1/02 - Dosimeters
• G02C 11/00 - Non-optical adjunctsAttachment thereof

Abstract

The invention relates to a method for chemically conditioning a heat transfer fluid in a primary circuit of a nuclear power plant, the circuit comprising a nuclear reactor core (NRC) and a steam generator (SG), each made of a metal alloy comprising nickel, the method comprising the steps of: A) injecting reducing and acid-base species into the heat transfer fluid in order to define, at a given temperature, a reference hydrogen potential-redox potential pair; B) injecting a reducing species at the inlet (MP1) of the steam generator in order to decrease the redox potential of the heat transfer fluid, thereby decreasing the solubility of the various phases of the nickel in the heat transfer fluid; C) injecting an oxidizing species at the inlet (MP2) of the core in order to compensate for the effects of the reducing species injected in step B), thereby increasing the redox potential of the heat transfer fluid and the solubility of the various phases of the nickel in the heat transfer fluid.

IPC Classes  ?

• G21C 17/022 - Devices or arrangements for monitoring coolant or moderator for monitoring liquid coolants or moderators
• C23F 11/08 - Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
• C23F 14/02 - Inhibiting incrustation in apparatus for heating liquids for physical or chemical purposes by chemical means
• C23F 15/00 - Other methods of preventing corrosion or incrustation
• G21C 19/307 - Arrangements for introducing fluent material into the reactor coreArrangements for removing fluent material from the reactor core with continuous purification of circulating fluent material, e.g. by extraction of fission products specially adapted for liquids
• G21F 9/04 - Treating liquids

Abstract

The invention relates to a method for chemically conditioning a heat-transfer fluid in a circuit of a power generation plant, the circuit (CS) comprising a hot source (GV) and a cold source (COND), each made of a metal alloy including iron, the method including the steps of: A) injecting reducing species and acid-base species into the heat-transfer fluid in order to define, at a given temperature, a hydrogen potential – reference redox potential pair; B) injecting a reducing species at the inlet (MP1) of the hot source in order to reduce the redox potential, thus increasing the solubility of the various phases of the iron in the heat-transfer fluid; and C) removing, at the inlet (MP2) of the cold source, the reducing species injected in step B), thus increasing the redox potential of the heat-transfer fluid, and reducing the solubility of the various phases of the iron in the heat-transfer fluid.

IPC Classes  ?

• F22B 37/02 - Component parts or details of steam boilers applicable to more than one kind or type of steam boiler

Abstract

A medical probe for optogenetics, including a flexible substrate made of two-dimensional conductive material, a plurality of vertical-cavity surface-emitting III-V semiconductor microlasers, referred to as elementary lasers, including an active layer disposed between a lower reflective layer and an upper reflective layer, a lower semiconductor contact disposed between the lower reflective layer and the substrate, and a lower metal contact disposed on the substrate and connected to the lower semiconductor contact via the substrate, an upper semiconductor contact disposed on the upper reflective layer, and an upper metal contact connected to the upper semiconductor contact, the lower metal contacts of the elementary lasers being intended to be electrically connected to a common potential, a biocompatible encapsulation layer.

IPC Classes  ?

• A61N 5/06 - Radiation therapy using light
• A61B 17/00 - Surgical instruments, devices or methods
• A61B 18/00 - Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
• A61N 5/067 - Radiation therapy using light using laser light
• H01S 5/0233 - Mounting configuration of laser chips
• H01S 5/042 - Electrical excitation
• H01S 5/42 - Arrays of surface emitting lasers

Abstract

A method produces a microelectronics device by hybrid bonding of individual chips onto a handle wafer, of the Die-to-Wafer type, includes a flow protocol for thinning the rear substrate of the chips. The flow protocol includes a pre-thinning grinding of the rear substrate of the individual chips once they have been attached to the wafer. This grinding is preceded by the formation of a protective layer protecting the trenches formed by the spaces between the attached individual chips. Next, a rectification etching rectifies the height of the rear substrate of each of the attached individual chips, via chemical wet etching, to eliminate the Total Thickness Variation. This etching is selective with respect to an etch-stop element contained in the respective substrates of the attached chips and which is used to stop the etching at a level that is substantially uniform for each of the chips.

IPC Classes  ?

• H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
• H01L 23/00 - Details of semiconductor or other solid state devices
• H10F 39/95 - Assemblies of multiple devices comprising at least one integrated device covered by group , e.g. comprising integrated image sensors

Abstract

A method for measuring the phase of a complex impedance, including: a) applying an excitation signal at a frequency; b) acquiring a first analog signal representative of a voltage; c) acquiring a second analog signal representative of a current; d) converting the analog signals into a first and a second digital signal; e) generating a delayed replica of the second digital signal; f) calculating a third digital signal by multiplying the first digital signal by the delayed replica of the second digital signal, and a fourth digital signal by multiplying the first digital signal by the second digital signal; g) applying low-pass digital filtering; h) determining said phase as a function of a ratio between the filtered signals and the frequency fex by applying a lookup table. A device for implementing such a method is also provided.

IPC Classes  ?

• G01R 25/00 - Arrangements for measuring phase angle between a voltage and a current or between voltages or currents
• G01R 27/16 - Measuring impedance of element or network through which a current is passing from another source, e.g. cable, power line

Abstract

A method for measuring the phase of the complex impedance of an electrical element (EL), including: applying an excitation signal at a known frequency to the electrical element (EL); acquiring a first and a second analog signal representative of a voltage and of a current, respectively; converting the first and the second analog signal to digital format; carrying out thresholding with hysteresis of the first and the second analog signal; measuring a time offset between an instant when the first analog signal and the second analog signal cross a threshold; and determining an estimate of the phase of the complex impedance of the electrical element as a function of the amplitudes of the first and the second analog signal converted to digital format, of the time offset and of the frequency of the excitation signal. A device for implementing this method is also provided.

IPC Classes  ?

• G01R 27/08 - Measuring resistance by measuring both voltage and current

Abstract

A manufacturing method enables the obtainment of a functional part essentially formed in a metallic material, all or part of the functional part delimiting a filtering medium permeable to a fluid and delimiting first and second main faces for a preferred circulation of said gas through the filtering medium. The method includes a main phase consisting of an additive manufacturing method in successive passes from a support tray. Each pass comprises the deposition of at least one layer of said metallic material, the deposited material adhering to the metallic material of at least one layer deposited before. The deposition is controlled at each pass such that the stack of the metallic material deposited during the successive passes constitutes the functional part. The filtering medium includes a coalescent network of connecting strands interconnected according to a three-dimensional spatial distribution between the first and second main faces.

IPC Classes  ?

• B01D 46/00 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
• A41D 13/11 - Protective face masks, e.g. for surgical use, or for use in foul atmospheres
• A62B 23/02 - Filters for breathing-protection purposes for respirators
• B01D 39/20 - Other self-supporting filtering material of inorganic material, e.g. asbestos paper or metallic filtering material of non-woven wires
• B01D 46/10 - Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces
• B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
• B23K 26/08 - Devices involving relative movement between laser beam and workpiece
• B23K 26/342 - Build-up welding
• B33Y 10/00 - Processes of additive manufacturing
• B33Y 80/00 - Products made by additive manufacturing

Abstract

222222O is oxidized to oxygen, and d) recovering the CO at the outlet of the cathode compartment (2), the deep eutectic solvent being chosen from a mixture of at least one ammonium salt and of at least one amine, a mixture of at least one ammonium salt and of at least one polyol, and a combination of these mixtures.

IPC Classes  ?

• C25B 1/04 - Hydrogen or oxygen by electrolysis of water
• C25B 13/08 - DiaphragmsSpacing elements characterised by the material based on organic materials
• C25B 1/23 - Carbon monoxide or syngas
• C25B 11/052 - Electrodes comprising one or more electrocatalytic coatings on a substrate
• C25B 11/065 - Carbon
• C25B 11/081 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of a single catalytic element or catalytic compound the element being a noble metal
• C25B 15/08 - Supplying or removing reactants or electrolytesRegeneration of electrolytes
• C25B 9/19 - Cells comprising dimensionally-stable non-movable electrodesAssemblies of constructional parts thereof with diaphragms

Abstract

The invention relates to a thermal detector comprising: - a reading substrate (10) comprising a reading circuit; - an absorbent membrane (40) comprising a thermometer transducer (44) electrically connected to the reading circuit, - anchoring pillars (20) and holding arms (30) for: keeping the absorbent membrane (40) suspended above the reading substrate (10); thermally insulating the absorbent membrane from the reading substrate (10); and electrically connecting the thermometer transducer (44) to the reading circuit; the holding arms (30) being formed from a stack of at least one portion (51b; 53b) of an insulating thin film (51;53) made of a thermally insulating material, and at least one portion (52b) of a conductive thin film (52) made from an electrically conductive material. The insulating thin film (51;53) is made of amorphous boron.

IPC Classes  ?

• G01J 5/02 - Constructional details
• G01J 5/04 - Casings
• G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

Disclosed is a dual-band radio antenna (100) comprising a single antenna array (103) comprising: – a first active antenna element (107A), intended to be excited by a radiofrequency signal; and – second parasitic antenna elements (107P) having geometries that are identical to one another and different from that of the first antenna element, each second antenna element being connected: A) to a reconfigurable parasitic load; or B) to a filtering and/or non-Foster parasitic load.

IPC Classes  ?

• H01Q 5/28 - Arrangements for establishing polarisation or beam width over two or more different wavebands
• H01Q 5/385 - Two or more parasitic elements
• H01Q 21/20 - Arrays of individually energised antenna units similarly polarised and spaced apart the units being spaced along, or adjacent to, a curvilinear path
• H01Q 9/04 - Resonant antennas
• H01Q 9/36 - Vertical arrangement of element with top loading

Abstract

The present invention relates to a multilayer device, the method for preparing same and the uses thereof, in particular in fuel cells.

IPC Classes  ?

• H01M 8/0228 - Composites in the form of layered or coated products
• H01M 8/0213 - Gas-impermeable carbon-containing materials
• H01M 8/0206 - Metals or alloys
• H01M 8/0221 - Organic resinsOrganic polymers
• H01M 8/0234 - Carbonaceous material
• H01M 8/0243 - Composites in the form of mixtures
• H01M 8/0258 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant

Abstract

The invention relates to a piping component (1) for a circuit (81, 82) in which a high-temperature fluid (8) circulates, in particular liquid metal or molten salt, in particular liquid sodium at 550°C. This component comprises two inner (12) and outer (11) sleeves inserted into one another, defining a static space (100) between them in which circulation does not take place and which is in communication with the circulating fluid (8) but thermally separated therefrom. These sleeves are connected together by a bellows (13) that is capable of axial deformation in order to compensate for axial expansion of the piping (81, 82) of the circuit. The outer sleeve (11) has, in a sagittal plane, radially outermost points (111, 112) which receive vent nozzles and are all outside the bellows (13). The bellows can be emptied by gravity, resulting in more complete venting, with better discharge of the allogenic residues present in the heat transfer fluid. Preferably, the compensation bellows (13) is concentric and internal to the outer sleeve (11), receiving the pressure on its "outer" surface.

IPC Classes  ?

• F16L 27/11 - Adjustable jointsJoints allowing movement comprising a flexible connection only the ends of the pipe being interconnected by a flexible sleeve the sleeve having the form of a bellows with multiple corrugations
• F16L 59/21 - Arrangements specially adapted to local requirements at flanges, junctions, valves, or the like adapted for expansion-compensation devices
• F16L 51/02 - Expansion-compensation arrangements for pipe-lines making use of a bellows or an expansible folded or corrugated tube

Abstract

A method of manufacturing an image sensor comprising the forming of an opening in a substrate, the forming of a conductive pad covering the flanks of the opening and delimiting a gap in the opening, the forming of microlenses in a layer made of a first resin, the layer made of the first resin covering the pad and penetrating into the gap, the forming of a mask made of a second resin on top of and in contact with the layer made of the first resin, the chemical plasma etching of the layer made of the first resin, through the mask, delimiting a block of the first resin in the gap, the deposition of a protective layer on the microlenses and on the block, the removal of the portion of the protective layer covering the block, and the etching of the block.

IPC Classes  ?

• H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
• H10K 39/32 - Organic image sensors

Abstract

A method of the vapor-phase deposition of a sulfide layer of a transition metal by ALD according to the following cycle: exposing a substrate to a precursor of the transition metal, whereby an intermediate layer is formed, purging the reactor, exposing the intermediate layer to a precursor of sulfur, purging the reactor, the substrate being at a temperature in the range from 20° C. to 250° C. during the cycle, where the cycle can be repeated several times with the same precursors or with different precursors, the precursor of the transition metal being selected from among molybdenum oxyhalides, tungsten oxyhalides, vanadium halides, niobium halides, and tantalum halides.

IPC Classes  ?

• C30B 28/14 - Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• C23C 16/56 - After-treatment
• C30B 29/46 - Sulfur-, selenium- or tellurium-containing compounds
• C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"

Abstract

Electrolysis or co-electrolysis reactor (SOEC) or fuel cell (SOFC) with stacking of electrochemical cells incorporating mechanical reinforcement elements with temperature-variable stiffness. An electrochemical device formed by assembly, by alternate customary stacking, of electrochemical cells and of fluidic and electrical interconnects, in which at least one mechanical reinforcement element is installed at each stage to take up the flexural forces which are liable to occur in the stack during the initial thermomechanical treatment step.

IPC Classes  ?

• C25B 9/60 - Constructional parts of cells
• C25B 1/04 - Hydrogen or oxygen by electrolysis of water
• C25B 1/22 - Inorganic acids
• C25B 9/73 - Assemblies comprising two or more cells of the filter-press type
• H01M 8/0612 - Combination of fuel cells with means for production of reactants or for treatment of residues with means for production of gaseous reactants from carbon-containing material
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte

Abstract

An electronic authentication system includes a computer, a memory device connected to the computer, and a set of electronic components. The computer and electronic components are connected together by direct or indirect links according to a predetermined configuration, each of the electronic components being provided with a PUF intended to apply a challenge-response type authentication protocol. The electronic system is configured to broadcast a unique challenge to the set of electronic components, and the computer is configured to receive back from the set of electronic components at least one response enabling it to verify the integrity of this set of electronic components by comparing said at least one response with at least one expected response recorded beforehand in the memory device. The integrity of the set of electronic components is authenticated as being valid if the at least one response and the at least one expected response coincide.

IPC Classes  ?

• H04L 9/32 - Arrangements for secret or secure communicationsNetwork security protocols including means for verifying the identity or authority of a user of the system

Abstract

Sensor for sensing temperature and measuring the state of charge (SOC) of a fiber-optic accumulator comprising one or more thermoluminescent materials, at one or more emission peaks in a region of variation of the optical absorption spectrum of the insertion material of an electrode. A sensor for sensing temperature and measuring the state of charge (SOC) of a metal-ion accumulator, including an optical fiber one free end of which forms an optical probe including one or more thermoluminescent materials capable of emitting a light peak at at least two wavelengths, at least one of the two peaks being designed to be in at least one region of variation of the optical absorption spectrum of the metal ion insertion material of at least one electrode of the accumulator, the ratio of the two peaks depending on the temperature of the accumulator and the variation in intensity of at least one of the two peaks being dependent on the insertion of the metal ions into the electrode.

IPC Classes  ?

• G01K 11/32 - Measuring temperature based on physical or chemical changes not covered by group , , , or using changes in transmittance, scattering or luminescence in optical fibres
• G01R 31/374 - Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC] with means for correcting the measurement for temperature or ageing
• G01R 31/378 - Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC] specially adapted for the type of battery or accumulator
• G01R 31/382 - Arrangements for monitoring battery or accumulator variables, e.g. SoC
• H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
• H01M 10/48 - Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte

Abstract

A manufacturing method enables the obtainment of a functional part essentially formed in a metallic material, all or part of the functional part delimiting a filtering medium permeable to a fluid and delimiting first and second main faces for a preferred circulation of said gas through the filtering medium. The method includes a main phase consisting of an additive manufacturing method in successive passes from a support tray. Each pass comprises the deposition of at least one layer of said metallic material, the deposited material adhering to the metallic material of at least one layer deposited before. The deposition is controlled at each pass such that the stack of the metallic material deposited during the successive passes constitutes the functional part. The filtering medium includes a coalescent network of connecting strands interconnected according to a three-dimensional spatial distribution between the first and second main faces.

IPC Classes  ?

• B01D 46/00 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
• A41D 13/11 - Protective face masks, e.g. for surgical use, or for use in foul atmospheres
• A62B 23/02 - Filters for breathing-protection purposes for respirators
• B01D 39/20 - Other self-supporting filtering material of inorganic material, e.g. asbestos paper or metallic filtering material of non-woven wires
• B01D 46/10 - Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces
• B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
• B23K 26/08 - Devices involving relative movement between laser beam and workpiece
• B23K 26/342 - Build-up welding
• B33Y 10/00 - Processes of additive manufacturing
• B33Y 80/00 - Products made by additive manufacturing

Abstract

An electronic product having a silicon-on-insulator substrate, a porous layer of anodic oxide or anodic hydroxide over the silicon layer of the silicon-on-insulator substrate, and a metal layer over the porous layer and that defines at least one electrical transmission line. The velocity of the electrical signal in the at least one electrical transmission line may be controlled by appropriate configuration of the porosity ratio of the porous layer.

IPC Classes  ?

• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• G02F 1/21 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference
• G02F 1/225 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
• H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• H01L 23/528 - Layout of the interconnection structure
• H10D 30/67 - Thin-film transistors [TFT]
• H10D 86/00 - Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Abstract

The present disclosure relates to a method (200) for manufacturing a resonator comprising a niobium-based enclosure, the method comprising the following successive steps: a) annealing (201) the enclosure at a temperature of at least 400°C for a duration of at least 1 h; and b) exposing (203) the enclosure to the air.

IPC Classes  ?

• H10N 60/20 - Permanent superconducting devices
• H10N 60/01 - Manufacture or treatment
• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• C23C 16/40 - Oxides
• H01P 11/00 - Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
• H05H 7/20 - CavitiesResonators with superconductive walls

Abstract

fusonrupureure > 20%; a step (c) of placing a strip (30a, 30b) based on an Ag-Cu alloy on each layer (40a, 40b) of bonding primer; a step (d) of forming an assembly (60) by stacking the elements in this order (10a, 20a, 30a, 40a, 50, 40b, 30b, 20b, 10b); a step (e) of compression-brazing the assembly (60) in a furnace at more than 450°C in a non-oxidizing atmosphere.

IPC Classes  ?

• H10N 30/06 - Forming electrodes or interconnections, e.g. leads or terminals
• H10N 30/87 - Electrodes or interconnections, e.g. leads or terminals
• B06B 1/06 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
• H10N 30/857 - Macromolecular compositions

Abstract

The invention relates to a method for separating an electrochemical bundle from the packaging therefor (case or pouch) of an out-of-use and/or end-of-life metal-ion storage cell, which consists in making at least one cut in the packaging, anchoring a dedicated tool in the electrochemical bundle and then removing the latter by pulling it out of the packaging.

IPC Classes  ?

• B09B 3/35 - Shredding, crushing or cutting
• H01M 10/54 - Reclaiming serviceable parts of waste accumulators
• H01M 6/52 - Reclaiming serviceable parts of waste cells or batteries
• H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
• H01M 10/058 - Construction or manufacture

Abstract

The invention relates to a method for separating an electrochemical bundle from the packaging therefor (case or pouch) of an out-of-use and/or end-of-life storage cell, which is integrated into a battery module and/or battery pack, comprising successively cutting the two end sections of the packaging, mechanically reinforcing the module between the two cuts in order to keep the storage cells mechanically connected, resting the module against a support, inserting a dedicated pushing tool into the electrochemical bundle and then removing the latter by pushing it out of the packaging.

IPC Classes  ?

• B09B 3/35 - Shredding, crushing or cutting
• H01M 10/54 - Reclaiming serviceable parts of waste accumulators
• H01M 4/505 - Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of manganese of mixed oxides or hydroxides containing manganese for inserting or intercalating light metals, e.g. LiMn2O4 or LiMn2OxFy
• H01M 6/52 - Reclaiming serviceable parts of waste cells or batteries
• H01M 10/052 - Li-accumulators
• H01M 10/0525 - Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodesLithium-ion batteries
• H01M 10/058 - Construction or manufacture

Abstract

The invention relates to a method for assembling parts (11, 12) made of silicon carbide-based materials by bonding, pre-assembling with a mixture of a crosslinkable organic resin and SiC powder, then infiltration of liquid silicon or a liquid non-reactive alloy MSi.

IPC Classes  ?

• C04B 37/00 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating
• C04B 35/634 - Polymers
• B23K 1/00 - Soldering, e.g. brazing, or unsoldering
• B23K 35/32 - Selection of soldering or welding materials proper with the principal constituent melting at more than 1550°C

Abstract

The invention relates to an electrochemical device formed by stacked assembly of pre-assembled modules, each of the modules being produced as a conventional stack of electrochemical cells, as per patent application EP3955353A1. A spacer plate that supports the contact elements and seals is removably mounted between stiffening plates of two adjacent modules, allowing good, uninterrupted circulation of gases and providing tight sealing, and also ensuring good electrical contact, while ensuring quick and easy installation.

IPC Classes  ?

• H01M 8/021 - Alloys based on iron
• C25B 1/04 - Hydrogen or oxygen by electrolysis of water
• C25B 9/77 - Assemblies comprising two or more cells of the filter-press type having diaphragms
• H01M 8/0217 - Complex oxides, optionally doped, of the type AMO3, A being an alkaline earth metal or rare earth metal and M being a metal, e.g. perovskites
• H01M 8/0228 - Composites in the form of layered or coated products
• H01M 8/0273 - Sealing or supporting means around electrodes, matrices or membranes with sealing or supporting means in the form of a frame
• H01M 8/0297 - Arrangements for joining electrodes, reservoir layers, heat exchange units or bipolar separators to each other
• H01M 8/2432 - Grouping of unit cells of planar configuration
• H01M 8/2483 - Details of groupings of fuel cells characterised by internal manifolds
• H01M 8/249 - Grouping of fuel cells, e.g. stacking of fuel cells comprising two or more groupings of fuel cells, e.g. modular assemblies
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte

Abstract

The invention relates to a sensor (1000) with a strain gauge for measuring the deformation between a first element and a second element in a main direction (Z), the sensor comprising at least one proof body (1100) comprising a first portion (1110), a central portion (1130) having an upper face (1131) and a lower face (1132), and a second portion (1120). The proof body defines a first slot (1141) extending between the upper face of the central portion and the first portion and separating the first and second portions, and a second slot (1142) extending between the lower face of the central portion (1130) and the second portion and separating the first and second portions. The sensor also includes a fibre optic gauge (1200) fixed to the central portion and a device for reading the gauge.

IPC Classes  ?

• G01L 1/24 - Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis
• G01B 11/16 - Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge

Abstract

The invention relates to a microwave module comprising a microwave chip comprising a substrate, an active layer comprising passive and active components on a first face of the chip, an electrical ground layer on a second face opposite the first face, the active layer comprising microstrip guide transmission lines; a housing encapsulating the microwave chip, the housing comprising a redistribution layer (RDL) covering the active layer of the microwave chip and comprising electrical connection traces for a connection between the active layer and electrical interfaces of the microwave module; the active layer comprising at least one ground terminal connected to the ground layer of the microwave chip, the ground terminal being connected to at least one of the electrical interfaces, referred to as ground interface, via at least one of the electrical connection traces, referred to as ground trace, the ground interface being configured to be connected to an electrical ground of a circuit board, the ground interface and the ground trace being opposite the active layer.

IPC Classes  ?

• H01L 23/66 - High-frequency adaptations
• H01L 23/552 - Protection against radiation, e.g. light
• H01L 23/00 - Details of semiconductor or other solid state devices
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements

Abstract

The invention relates to a microwave module comprising a microwave chip comprising a substrate, an active layer on a first face of the chip, an electrical ground layer on a second face opposite the first face, the active layer comprising microstrip guide transmission lines; a housing encapsulating the microwave chip, said housing comprising a redistribution layer covering the active layer of the microwave chip and comprising electrical connection traces for a connection between the active layer and an electrical interface of the microwave module; the active layer comprising at least one transistor, one or more of the electrical traces of the redistribution layer, referred to as ground traces, connecting a source electrode of the transistor to one or more of the electrical interfaces, referred to as ground interfaces, the one or more ground interfaces being configured to be connected to a ground of a circuit board.

IPC Classes  ?

• H01L 23/66 - High-frequency adaptations
• H01L 23/498 - Leads on insulating substrates
• H10D 89/00 - Aspects of integrated devices not covered by groups
• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H03F 3/195 - High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
• H05K 1/02 - Printed circuits Details
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A method for solid-phase extraction and/or separation of one or more compounds of interest from a liquid sample which including: integrating a self-supporting porous monolith in a fluid duct wherein the self-supporting porous monolith is stationary in the fluid duct during the method and forms a filter in the fluid duct; passing the sample at least once through the porous monolith in the fluid duct over at least one portion of the porous monolith, the self-supporting porous monolith having a largest dimension less than or equal to 3 mm transverse to the fluid duct, the fluid duct having one or more open ends prior to integration, the or at least one of the ends remaining open during the step of integrating the porous monolith.

IPC Classes  ?

• B01D 15/20 - Selective adsorption, e.g. chromatography characterised by constructional or operational features relating to the conditioning of the sorbent material
• B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
• B01J 20/30 - Processes for preparing, regenerating or reactivating
• G01N 1/34 - PurifyingCleaning
• G01N 30/02 - Column chromatography

Abstract

The method of the invention comprises an epitaxy of a layer of interest made of GeSn on a growth layer comprising Ge, having a concentration of tin lower than that of the layer of interest; a formation of an active region in the layer of interest, having a surface extent smaller than a first maximum surface area; a removal of a part of the growth layer so that the interface between the growth layer and the layer of interest facing the active region is less than a second maximum surface area or null; a formation of a metallic portion including Ti or NiPt on a part of the layer of interest; The method of the invention comprises an epitaxy of a layer of interest made of GeSn on a growth layer comprising Ge, having a concentration of tin lower than that of the layer of interest; a formation of an active region in the layer of interest, having a surface extent smaller than a first maximum surface area; a removal of a part of the growth layer so that the interface between the growth layer and the layer of interest facing the active region is less than a second maximum surface area or null; a formation of a metallic portion including Ti or NiPt on a part of the layer of interest; a heating in a furnace to a temperature strictly greater than the epitaxy temperature, to create an intermetallic compound from the metallic portion; the first and second maximum surface areas being such that the tin in the active region does not segregate.

IPC Classes  ?

• H01S 5/042 - Electrical excitation
• H01S 5/02 - Structural details or components not essential to laser action

Abstract

A device for generating a radar signal includes: a generator of periodically repeated series of trigger pulses having a linearly variable temporal spacing; and an oscillator configured to receive as input said trigger pulses and to generate a train of periodic oscillations in correspondence with each said trigger pulse. The oscillator has a frequency that varies as a function of a control signal. The device includes a generator of the control signal, suitable for varying linearly the frequency of the oscillator from one train of periodic oscillations to another. Furthermore, a radar device includes a transmit channel having such a device for generating a radar signal; and a receive channel configured to receive echoes of the radar signal and to demodulate them synchronously with their generation to extract time-of-flight information therefrom.

IPC Classes  ?

• G01S 13/22 - Systems for measuring distance only using transmission of interrupted, pulse modulated waves using irregular pulse repetition frequency
• G01S 7/28 - Details of pulse systems
• G01S 7/282 - Transmitters
• G01S 7/288 - Coherent receivers
• G01S 13/02 - Systems using reflection of radio waves, e.g. primary radar systemsAnalogous systems

Abstract

A method for manufacturing a spin-orbit torque effect memory, referred to as SOT memory, which is simple to execute and which offers a memory with a switching efficiency at least equivalent to the SOT memories of prior art. For this, the manufacturing method includes depositing a conductive layer, referred to as a spacer, onto a magnetic stack; etching the magnetic stack using the spacer as an etching mask so as to form a magnetic tunnel junction; and forming an SOT track on the spacer.

IPC Classes  ?

• H10N 50/10 - Magnetoresistive devices
• H10N 50/01 - Manufacture or treatment
• H10N 50/20 - Spin-polarised current-controlled devices
• H10N 50/80 - Constructional details

Abstract

The invention relates to a photovoltaic device comprising a multilayer stack comprising: at least one photovoltaic cell; and an encapsulating structure containing the at least one photovoltaic cell. The encapsulating structure comprises a first face and a second opposing face; a first barrier structure formed by a single layer or a plurality of superimposed layers and arranged on the first or second face; a first composite reinforcement structure comprising a first polymer matrix loaded with a first network of fibres; the first composite reinforcement structure being separated from the encapsulating structure by the first barrier structure; the first barrier structure having a lower water vapour transmission coefficient WVTR than that of the first composite reinforcement structure.

IPC Classes  ?

• H10F 19/80 - Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells

Abstract

The present invention relates to a material in the form of porous polymer beads with open porosity, characterised in that said material comprises at least one dialkyl sulphide possibly combined with at least one alkyl aniline in at least a portion of the pores of said polymer beads. The present invention also relates to a method for preparing such a material and to the use thereof for extracting palladium and/or rhodium and/or silver from a solution containing same.

IPC Classes  ?

• C22B 3/24 - Treatment or purification of solutions, e.g. obtained by leaching by physical processes, e.g. by filtration, by magnetic means by adsorption on solid substances, e.g. by extraction with solid resins
• B01J 20/26 - Synthetic macromolecular compounds
• B01J 20/32 - Impregnating or coating
• C22B 3/42 - Treatment or purification of solutions, e.g. obtained by leaching by ion-exchange extraction
• C22B 7/00 - Working-up raw materials other than ores, e.g. scrap, to produce non-ferrous metals or compounds thereof
• C22B 11/02 - Obtaining noble metals by dry processes
• C22B 11/00 - Obtaining noble metals

Abstract

The invention relates to a method for producing and transferring a two-dimensional material, the method comprising the following steps: - forming, on a growth substrate (10), a stack (20) comprising a two-dimensional material layer (21), a stiffening layer (22) and a sacrificial layer (23) made of polymer material, the step of forming the stack (20) comprising the following sub-steps: - growing the two-dimensional material layer (21) on the growth substrate (10); - depositing the stiffening layer (22) on the two-dimensional material layer (21); and - forming the sacrificial layer (23) on the stiffening layer (22); - separating the growth substrate (10) and the stack (20) by immersing them in a liquid (30); - transferring (S3) the stack (20) onto a target substrate (40), wherein the two-dimensional material layer (21) is arranged between the stiffening layer (22) and the target substrate (40); - removing the sacrificial layer (23); and - removing the stiffening layer (22).

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

An electrical connection interface (20) comprising a silicon support (21) which has a front face (22) and a rear face (23) opposite the front face (22), wherein the front face (22) comprises a welded connection with a connector (30) intended to be connected to an electrical harness (10) and the rear face comprises an electrically conductive zone. A cell comprising such an interface (20). A photovoltaic module comprising such a cell.

IPC Classes  ?

• H10F 77/00 - Constructional details of devices covered by this subclass
• H10F 19/90 - Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers

Abstract

The present invention provides new inhibitors of LRRK2/PP1 interaction able to pass through the Blain Blood Barrier and to target the brain. The present invention relates to these inhibitors for use as medicament and more particularly to methods and pharmaceutical compositions for the treatment of neurodegenerative disorders, more particularly α-synucleinopathies.

IPC Classes  ?

• C07K 7/08 - Linear peptides containing only normal peptide links having 12 to 20 amino acids
• A61K 38/00 - Medicinal preparations containing peptides
• C07K 14/47 - Peptides having more than 20 amino acidsGastrinsSomatostatinsMelanotropinsDerivatives thereof from animalsPeptides having more than 20 amino acidsGastrinsSomatostatinsMelanotropinsDerivatives thereof from humans from vertebrates from mammals
• C12N 9/00 - Enzymes, e.g. ligases (6.)ProenzymesCompositions thereofProcesses for preparing, activating, inhibiting, separating, or purifying enzymes

Abstract

The invention relates to a photoelectrochemical converter (1) comprising a PIN-type photovoltaic cell (3) and an electrochemical module (2) attached to the photovoltaic cell, wherein the electrochemical module comprises anode (20) and cathode (21) blocks, and an electrolysis cell (22) sandwiched between the anode and cathode blocks, wherein the electrolysis cell is supplied with electrical power by the photovoltaic cell in order to oxidise water, wherein the photoelectrochemical converter comprises a water inlet opening (32) formed on the anode block in order to add water to the converter, wherein the electrolysis cell comprises a stack containing an anode (23), a proton exchange membrane (25) and a cathode (24), and wherein the anode block (20) is sandwiched between the electrolysis cell (25) and the photovoltaic cell (3) and comprises an anode fluid circulation system (30) that comprises an anode exchange opening (31) that opens onto the anode (23) and an anode channel (30) shaped to convey water from the water inlet opening to the anode.

IPC Classes  ?

• C25B 15/08 - Supplying or removing reactants or electrolytesRegeneration of electrolytes
• C25B 1/04 - Hydrogen or oxygen by electrolysis of water
• C25B 3/07 - Oxygen containing compounds
• C25B 3/26 - Reduction of carbon dioxide
• C25B 9/23 - Cells comprising dimensionally-stable non-movable electrodesAssemblies of constructional parts thereof with diaphragms comprising ion-exchange membranes in or on which electrode material is embedded
• C25B 9/65 - Means for supplying currentElectrode connectionsElectric inter-cell connections
• C25B 11/056 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the substrate or carrier material consisting of textile or non-woven fabric
• C25B 11/065 - Carbon
• C25B 11/077 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of a single catalytic element or catalytic compound the compound being a non-noble metal oxide
• C25B 11/081 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of a single catalytic element or catalytic compound the element being a noble metal
• H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
• H10K 30/57 - Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
• C25B 11/054 - Electrodes comprising electrocatalysts supported on a carrier
• C25B 11/031 - Porous electrodes
• H10F 10/172 - Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
• H10F 10/174 - Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials

Abstract

A computer-implemented method is provided for the calibration of ultrasound signals acquired by a multi-element ultrasound transducer for the purpose of imaging an area of interest. The method includes the steps of: estimating an ultrasound field emitted from the transducer towards any point P of the area, estimating an ultrasound field, originating from the point P, acquired by the transducer, determining an elementary signal received by the transducer on the basis of the emitted ultrasound field and the acquired ultrasound field, determining on the basis of the elementary signal, for each point P of the area, a calibration coefficient to be applied to the signals received by an ultrasound transducer in order to image the area, or to an ultrasound image obtained on the basis of the received signals.

IPC Classes  ?

• G01N 29/30 - Arrangements for calibrating or comparing, e.g. with standard objects
• G01N 29/06 - Visualisation of the interior, e.g. acoustic microscopy
• G01N 29/44 - Processing the detected response signal

Abstract

Optoelectronic device including: a plurality of diodes each including a portion of a stack of first and second semiconductor layers doped according to opposite types, a portion of the first layer of each diode being coupled to a first electrode; trenches running through the stack; a conductive layer arranged against side walls of the trenches, insulated from the stack, coupled to the second electrodes and which is interrupted in such a way that portions of the conductive layer arranged around each of the diodes are insulated from other portions of the conductive layer arranged around the other diodes; conductive portions arranged in the trenches, insulated from the electrically conductive layer and coupled to one another and to a third electrode; bottom walls of the trenches being formed at least by the second electrodes.

IPC Classes  ?

• H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
• H01L 31/0216 - Coatings
• H01L 31/0224 - Electrodes
• H01L 33/42 - Transparent materials
• H01L 33/44 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Neutron detector comprising an optical fission chamber with a reflective optical cavity and a detection head coupled to the chamber comprising an optical lens and a fibre-optic coupler. A neutron detector including at least one seal-tight ionization chamber referred to as an OFC, acronym of optical fission chamber, each chamber implementing optical transduction and comprising an optical cavity the operation of which is based on optical transduction and which incorporates, at one of its longitudinal ends, a window and an optical lens by way of optical interface and, at the other end, a mirror for reflecting photons travelling away from the window.

IPC Classes  ?

• G01T 3/00 - Measuring neutron radiation
• G21C 17/06 - Devices or arrangements for monitoring or testing fuel or fuel elements outside the reactor core, e.g. for burn-up, for contamination
• G21C 17/108 - Measuring reactor flux

Abstract

The invention relates to a method for the IBS deposition of a VOx layer comprising at least chromium and/or boron. The method includes a conditioning phase comprising deposition of a VOx-based film on a test substrate with an initial oxygen flow rate and determination of an intermediate oxygen flow rate comprising the following iterative process: (1) increasing the oxygen flow rate by a predetermined increment to obtain an increased oxygen flow rate, (2) depositing a VOx-based film with the increased oxygen flow rate, (3) measuring a difference in a parameter of the film induced by the increment selected from a deposition rate, a resistivity and a resistance of the film, and (4) repeating the preceding steps while the difference is greater than a predetermined threshold. The VOx layer is deposited with a final oxygen flow rate strictly lower than the intermediate oxygen flow rate.

IPC Classes  ?

• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• C23C 14/08 - Oxides
• C23C 14/34 - Sputtering
• C23C 14/46 - Sputtering by ion beam produced by an external ion source
• G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

The invention relates to a method for producing patterns in a semiconductor layer, the method comprising: - providing a hard mask (103) on the semiconductor layer (12); - forming a first implantation mask (115) on the hard mask (103); - performing a first implantation on the hard mask (103); - removing the first implantation mask (115); - forming a second implantation mask (125) on the hard mask layer (103); - performing a second implantation; - selectively removing given regions (103'') of the hard mask that were implanted during the first implantation and the second implantation with respect to the non-implanted portions (103N) of the hard mask, or regions (103') implanted only during the first implantation or the second implantation, so as to form, in the hard mask, an apertured hard mask having one or more patterns; - transferring the patterns to the semiconductor layer (12) by etching the semiconductor layer covered with the apertured hard mask (figure 10B).

IPC Classes  ?

• H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks

Abstract

The present description relates to an avalanche photodiode (5) comprising, in order, an absorption region (10) for receiving radiation (6), a first multiplication region (20a), a second multiplication region (20b), and a collection region (30). The first and second multiplication regions have a lower dopant concentration than the absorption region and the collection region. The first multiplication region comprises two to five multilayer structures (22) wherein each multilayer structure comprises a first layer having a first bandgap, then a second layer having a second bandgap strictly smaller than the first bandgap. The second multiplication region has a bandgap that is constant or that varies in a single direction from the first multiplication region to the collection region.

IPC Classes  ?

• H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode

Abstract

The present description relates to a navigation guide for a fluid circuit comprising a substrate (10) covered by portions (PN) of active blocks, each portion (PN) of active blocks comprising at least one active block (11), each active block (11) comprising at least one organic electroactive layer (103) disposed between a first electrode (101) and a second electrode (102).

IPC Classes  ?

• A61M 25/01 - Introducing, guiding, advancing, emplacing or holding catheters
• A61M 25/09 - Guide wires
• A61L 29/00 - Materials for catheters or for coating catheters
• A61M 25/00 - CathetersHollow probes

Abstract

The present description relates to a pressure measurement device for a fluid circuit comprising a substrate (10) covered by N piezoelectric sensors (11) disposed in line on the same face of the substrate (10), N being an integer greater than or equal to 2, each piezoelectric sensor (11) comprising at least one organic piezoelectric layer (103) disposed between a first electrode (101) and a second electrode (102).

IPC Classes  ?

• G01L 9/00 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
• G01L 9/08 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elementsTransmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61B 5/1455 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using optical sensors, e.g. spectral photometrical oximeters
• G01L 1/16 - Measuring force or stress, in general using properties of piezoelectric devices
• H10N 30/30 - Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
• A61B 5/024 - Measuring pulse rate or heart rate
• A61B 5/01 - Measuring temperature of body parts

Abstract

Disclosed is a carrier (100) intended to be split by laser radiation, comprising a carrier substrate (Sprt); on the carrier layer, a splitting layer (Sep) formed from an inorganic material of thickness between 10 nm and 100 nm; and a layer (Brg) forming a Bragg mirror, the splitting layer (Sep) being interposed between the carrier substrate (Sprt) and the layer (Brg) forming the Bragg mirror, the carrier being configured in such a way that the carrier substrate is substantially transparent to laser radiation of a certain wavelength, the layer forming the Bragg mirror is substantially reflective with respect to the laser radiation, and the splitting layer (Sep) can absorb some of the laser radiation, such that the carrier can be split into two parts level with the splitting layer (Sep) under the action of the laser radiation.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

The invention relates to a glass substrate (100) for use in the microelectronics field, the glass substrate (100) comprising a first main face (110) and a second main face (120). The first main face (110) and/or the second main face (120) have a transparent central region and an opaque perimeter (111, 121). The second main face (120) can be covered with a stack comprising a first layer (140) made of a transparent conductive oxide, preferably indium tin oxide, and a second layer (150) made of a dielectric material, preferably a silicon nitride layer or a TEOS layer. The first main face (110) can be covered with a substrate of interest (300).

IPC Classes  ?

• C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching
• B24B 1/00 - Processes of grinding or polishingUse of auxiliary equipment in connection with such processes
• C03C 17/34 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof

Abstract

The invention relates to a method comprising the following steps: a) using a stack comprising, successively, a first substrate (1), a bonding interface (IC) sensitive to a wet medium and/or to mechanical vibrations, and a second substrate (2); b) forming cavities (3) within the second substrate (2) that define elementary cells (CE), wherein the cavities (3) each have a bottom that extends a distance away from the bonding interface (IC), and wherein the second substrate (2) maintains an intermediate zone between the bottom and the bonding interface (IC); c) applying laser radiation to the bottom of each cavity (3) so as to: - locally perform an ablation (A) of the intermediate zone, the bonding interface (IC), and a first portion of the first substrate (1); - retain a second portion (11) of the first substrate (1) in the continuation of the ablation (A), suitable for maintaining the mechanical strength of the elementary cells (CE); d) remove the second portion (11) of the first substrate (1).

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

The present description relates to a navigation guide for a fluid circuit successively comprising a distal part (1), a central part (2) and a proximal part (3). The distal part (1) comprises a substrate covered by an active block comprising at least two organic electroactive layers, first electrodes and second electrodes, each organic electroactive layer being disposed between a first electrode and a second electrode, the substrate having a length/width ratio of between 2 and 150, the distal part (1) forming an angle α of between 20 and 360° relative to the proximal part (3), when no voltage is applied to the active block.

IPC Classes  ?

• A61M 25/01 - Introducing, guiding, advancing, emplacing or holding catheters
• A61L 29/00 - Materials for catheters or for coating catheters
• A61M 25/09 - Guide wires
• A61M 25/00 - CathetersHollow probes

Abstract

The present invention relates to a nickel-based alloy characterized in that it comprises, in weight percent: - 15 to 25% molybdenum; - 0.4 to 5% aluminium; - 0 to 2% titanium; - < 3% chromium; - < 3% iron; - < 3% tungsten; - < 0.1% impurities (Im1), the impurities (Im1) being cobalt, zirconium, niobium, tantalum, hafnium, silicon, yttrium, lanthanum, cerium, manganese, magnesium, copper, palladium, platinum, vanadium and carbon; - < 0.01% impurities (Im2), the impurities (Im2) being sulphur, phosphorus and boron; nickel representing the remainder to 100%. An alloy according to the invention can be used as a structural or coating material for parts subjected to corrosion by molten salts, in particular at high temperature, i.e., between 400 and 800°C, such as fluoride salts and, more particularly, chloride salts.

IPC Classes  ?

• C22C 19/03 - Alloys based on nickel or cobalt based on nickel

Abstract

The invention relates to a pin-type tandem photovoltaic structure comprising, from the front side (1a) to the back side (1b): o an upper electrode layer (20); o an upper photovoltaic cell (30), comprising: a buffer layer (31) made of an aluminium oxide with a thickness of between 1 nm and 5 nm; • an electron transport layer (32), • an active layer (33) based on a perovskite material; • a hole transport layer (34); o a lower photovoltaic cell (50).

IPC Classes  ?

• H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
• H10K 30/57 - Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
• H10K 85/50 - Organic perovskitesHybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
• H10K 102/00 - Constructional details relating to the organic devices covered by this subclass
• H10K 102/10 - Transparent electrodes, e.g. using graphene

Abstract

Clostridioides difficileClostridioides difficile.

IPC Classes  ?

• A61K 38/16 - Peptides having more than 20 amino acidsGastrinsSomatostatinsMelanotropinsDerivatives thereof
• C12N 15/74 - Vectors or expression systems specially adapted for prokaryotic hosts other than E. coli, e.g. Lactobacillus, Micromonospora
• C12N 15/87 - Introduction of foreign genetic material using processes not otherwise provided for, e.g. co-transformation

Abstract

The present description relates to a conformable force-measuring device, intended to be subjected simultaneously to compressive forces and bending forces, the device comprising sensors (11, 12) arranged on either side of a substrate (100), the sensors comprising an organic piezoelectric layer (120) arranged between a first electrode (110) and a second electrode (130), the sensors (11, 12) being arranged opposite each other, so as to form a bimorph (10), the sensors being connected to electrically conductive tracks (200) intended to be connected to measuring apparatuses, the organic piezoelectric layers (120) of the sensors (11, 12) being polarised and the sensors (11, 12) being intended to be electrically connected to the measuring apparatuses so as to cancel out either the compressive forces or the bending forces.

IPC Classes  ?

• G01L 1/16 - Measuring force or stress, in general using properties of piezoelectric devices

Abstract

A plastic scintillator discriminating alpha-rays from beta-rays emitted by a radioactive medium, the plastic scintillator including a plastic scintillator material capable of discriminating an alpha radiation from a beta radiation by a shape of a scintillation pulse that the alpha and the beta radiations create, having a ratio of a surface S able to be in contact with the radioactive medium to a total volume V of the plastic scintillator (S/V) greater than or equal to 7 cm−1 and the surface S able to be in contact with the radioactive medium greater than or equal to 10 cm2. A method of preparing the plastic scintillator, including: shaping the plastic scintillation material into a monolith; and machining, cutting the monolith into a final shape of the plastic scintillator. A detection device, including: the plastic scintillator; and a display device enabling an operator to read a level of ambient radioactivity.

IPC Classes  ?

• G01T 1/203 - Measuring radiation intensity with scintillation detectors the detector being made of plastics
• B33Y 80/00 - Products made by additive manufacturing

Abstract

The invention relates to a method for manufacturing a packaging structure 1 comprising a first cavity 300a and a second cavity 300b, both hermetic. The method includes a step of forming over a substrate 100 a first portion 105a of a material capable of releasing a noble gas contained in the material by heating, intended to form a wall of the first cavity 300a; a step of sealing the substrate 100 to a cover 200 to form and hermetically close each of the first and second cavities 300a, 300b; a step of heating the first and second cavities 300a, 300b to release the noble gas contained in the material. The first portion 105a contributes to sealing of the substrate 100 to the cover 200 during the sealing step.

IPC Classes  ?

• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• B81B 7/00 - Microstructural systems