Abstract

A device for receiving radio frequency signals for a magnetic resonance imaging/spectroscopy system including an intracardiac receiving resonant loop and a switch capable of being alternately in an open state such that the frequency of the receiving antenna is tuned to an operating frequency of the magnetic resonance imaging system, and in a closed state such that the frequency of the receiving resonant loop is detuned, the receiving device including a first transmission line having a conductor with a distal end electrically connected to the receiving resonant loop and a proximal end electrically connected to the switch such that the switch is intended to be located outside the human body when the receiving resonant loop is located inside a patient's heart.

IPC Classes  ?

• G01R 33/36 - Electrical details, e.g. matching or coupling of the coil to the receiver
• G01R 33/28 - Details of apparatus provided for in groups
• G01R 33/34 - Constructional details, e.g. resonators

Abstract

Ultrasound-based wireless battery-free implantable sensors comprising a solution-gated field-effect transistor This disclosure relates to wireless battery-free implantable sensors for biomedical applications. Ultrasound-based wireless communication is proposed as an alternative to electromagnetic communication. The implantable sensor comprises a piezoelectric element and a variable impedance load whose value is a function of a physiological parameter of interest. The load is a solution-gated field-effect transistor (SG-FET), preferably a transistor with a graphene channel. The load is connected to the piezo-electric element for wireless communication with an external device. Experiments show that an ultrasound echo signal can be modulated by the gate voltage of the transistor and that the modulated signal can be transmitted through a propagation medium such a biological tissue.

IPC Classes  ?

• A61B 5/00 - Measuring for diagnostic purposes Identification of persons

Abstract

The invention relates to an electrochemical cell unit comprising the following, in the following order across its thickness: a hydrogen electrode (200) comprising a support electrode layer (203) and a functional electrode layer (204) stacked one on top of the other; a solid electrolyte (300) comprising a thin layer (302) having a first surface (305) and a second surface (306); and an oxygen electrode (400), characterised in that the solid electrolyte (300) comprises a frame (303) which extends from the first face (305) of the thin layer (302) and forms a cavity (304) in which the hydrogen electrode (200) is at least partially arranged. The invention relates to the optimisation of a solid oxide cell, including solid oxide fuel cells and solid oxide electrolyser cells.

IPC Classes  ?

• H01M 8/1213 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the electrode/electrolyte combination or the supporting material
• H01M 8/1226 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the electrode/electrolyte combination or the supporting material characterised by the supporting layer
• H01M 8/1246 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the process of manufacturing or by the material of the electrolyte the electrolyte consisting of oxides
• H01M 8/2432 - Grouping of unit cells of planar configuration
• H01M 4/88 - Processes of manufacture
• C25B 9/00 - Cells or assemblies of cellsConstructional parts of cellsAssemblies of constructional parts, e.g. electrode-diaphragm assembliesProcess-related cell features

Abstract

2.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H10F 55/00 - Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto
• H10H 29/01 - Manufacture or treatment
• H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
• H10H 29/85 - Packages
• H10H 29/49 - Interconnections, e.g. wiring lines or terminals

Abstract

The present invention relates to a method for irrigating a porous substrate comprising the steps of: preparing a foam consisting of a dispersion of air bubbles in a foaming aqueous solution, said foam comprising a liquid fraction of less than or equal to 15% by volume; spreading, over the surface of the porous substrate, a layer of the foam thus prepared, the thickness of the layer being greater than 5 cm, then maintaining the assembly long enough for at least a part of the liquid contained in the foam to infiltrate the porous substrate. The present invention also relates to the use of this method to recover an element of interest contained in a porous substrate and a particular aqueous foam.

IPC Classes  ?

• C22B 3/04 - Extraction of metal compounds from ores or concentrates by wet processes by leaching
• B09C 1/02 - Extraction using liquids, e.g. washing, leaching

Abstract

A method for processing animal products, in particular products from poultry farming, includes: a) chemically treating by placing collected waste in contact with an ammonia-based buffer with a pH of at least 8; b) heating the material resulting from step a) in a humid medium to a temperature of at least 70° C.; c) separating the organic matter and inorganic matter in the presence of water from the material resulting from step b), then separated collection of (i) the liquid fraction having the inorganic matter, and (ii) the solid fraction having the organic matter; and d) adding the liquid fraction resulting from step c (ii), having the inorganic matter, in a basin filled with water held in a controlled manner at a setpoint temperature ranging from 20° C. to 42° C., preferably from 28° C. to 35° C., in which a protein-rich plant or bacterium is cultivated, in particular microalgae or cyanobacteria, preferably spirulina.

IPC Classes  ?

• C05F 17/05 - Treatments involving invertebrates, e.g. worms, flies or maggots
• A01G 9/14 - Greenhouses
• C05F 3/06 - Apparatus for their manufacture
• C05F 17/20 - Preparation of fertilisers characterised by biological or biochemical treatment steps, e.g. composting or fermentation using specific microorganisms or substances, e.g. enzymes, for activating or stimulating the treatment

Abstract

A method for manufacturing a crystal layer includes using a substrate having a surface film made of a dichalcogenide of a transition metal, designated MX2, where “M” denotes a transition metal and “X” denotes a chalcogen, the surface film including a set of monolayers bonded together by van der Waals bonds; forming a polycrystalline aluminium nitride AlN film, having grain boundaries, on the surface film; and diffusing metal elements into the surface film, through the grain boundaries of the polycrystalline aluminium nitride AlN film, the metal elements being chosen to react chemically with MX2 by a redox reaction so as to convert the van der Waals bonds into covalent bonds, A crystalline layer is formed on the polycrystalline aluminium nitride AlN film after the diffusing.

IPC Classes  ?

• C30B 28/14 - Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
• C30B 29/40 - AIIIBV compounds
• C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"
• C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Abstract

A substrate is provided, including: a first layer based on a semiconductive material; a second layer surmounting the first layer; and a plurality of buried vias extending from the second layer over a portion of the first layer, each via of the plurality of buried vias being delimited by a side wall, a bottom wall, and an upper wall opposite the bottom wall, at least one assembly of the plurality of vias forming a pattern repeated along at least one direction of a main extension plane of the first layer and the second layer. A method for manufacturing the substrate is also provided. A method for manufacturing a microelectronic device is also provided.

IPC Classes  ?

• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

Abstract

csupjnfsupinfinf), the upper metal sheet (10) comprises a longitudinal series of internal ribs (15i) and external ribs (15e), each having an opposite, closed end that is not connected to the external rib (12e) or the internal rib (12i), respectively.

IPC Classes  ?

• H01M 8/0206 - Metals or alloys
• H01M 8/0258 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant
• H01M 8/0267 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors having heating or cooling means, e.g. heaters or coolant flow channels
• H01M 8/0276 - Sealing means characterised by their form
• C25B 9/65 - Means for supplying currentElectrode connectionsElectric inter-cell connections
• H01M 8/0254 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the form corrugated or undulated

Abstract

The present description concerns a method of training a neural network (202) comprising: the generation of a modified image, by a modified data generator, based on a first image, the modified image comprising at least one outlier pixel value with respect to the first image; the supplying of the modified image to the network; the generation, by the network, of a corrected image; the supplying of the corrected image, by the network, and the supplying of an indication of the position of the at least one modified pixel, by the generator, to a computing circuit (210) the generation of an error value, based on the application of a loss function, by the computing circuit, taking as inputs the first image, the indication, and the corrected image; the correction of parameters associated with the network by backpropagation of the error in the network.

IPC Classes  ?

• G06T 5/70 - DenoisingSmoothing
• G06T 3/4015 - Image demosaicing, e.g. colour filter arrays [CFA] or Bayer patterns
• G06T 5/60 - Image enhancement or restoration using machine learning, e.g. neural networks

Abstract

The invention relates to a bipolar plate for an electrochemical cell comprising upper and lower metal sheets (10, 20) and first and second headers (2, 3), wherein, in a first intermediate zone extending between the upper (15) and lower (25) ribs of the first header on the one hand and the upper (12) and lower (22) external ribs on the other hand, the upper conductive sheet (10) comprises an upper recess (14), referred to as an intermediate upper recess, and the lower conductive sheet (20) comprises a lower rib (24), referred to as an intermediate lower rib, positioned over and in contact with the intermediate upper recess (14).

IPC Classes  ?

• H01M 8/0206 - Metals or alloys
• H01M 8/0254 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the form corrugated or undulated
• H01M 8/0258 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant
• H01M 8/0267 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors having heating or cooling means, e.g. heaters or coolant flow channels
• H01M 8/0271 - Sealing or supporting means around electrodes, matrices or membranes
• H01M 8/2483 - Details of groupings of fuel cells characterised by internal manifolds
• C25B 1/04 - Hydrogen or oxygen by electrolysis of water

Abstract

The invention relates to a resolution target for infrared imaging, the target comprising a plurality of patterns formed on the front face of a support (22), laterally spaced in pairs in a main plane, and intended to form dark patterns on a light background when the resolution target is illuminated by the infrared beam. Each pattern is formed by a Fabry-Pérot-type resonant cavity (CR) comprising a lower reflector (23) and an upper reflector (25) between which an intermediate layer (24) is located; wherein the lower reflector (23), located on the side of the support (22), is less reflective than the upper reflector (25). The intermediate layer (24) extends continuously from one resonant cavity (CR) to another, and thus also extends into an intermediate zone (ZI) surrounding the resonant cavities in the main plane.

IPC Classes  ?

• G01J 3/26 - Generating the spectrumMonochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filter
• G01J 3/12 - Generating the spectrumMonochromators
• G01J 5/48 - ThermographyTechniques using wholly visual means
• G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
• G01M 11/02 - Testing optical properties
• H04N 17/00 - Diagnosis, testing or measuring for television systems or their details
• G01J 5/90 - Testing, inspecting or checking operation of radiation pyrometers

Abstract

The invention relates to a method for locating a magnetic field-measuring assembly comprising at least one magnetoresistive sensor and/or Hall sensor, comprising the steps of: a:/ generating, by way of an electromagnetic field-generating device (1), a magnetic field of variable amplitude and/or shape such that the position of a predetermined value of the amplitude of the magnetic field varies along at least two directions (X, Y) at different frequencies; b/ measuring the magnetic field along each of the directions at the frequency corresponding to each direction by way of the magnetic field-measuring assembly; c/when the magnetic field-measuring assembly detects the predetermined value of the magnetic field along each of the directions, determining the position of the magnetic field-measuring assembly.

IPC Classes  ?

• G01R 33/07 - Hall-effect devices
• A61B 5/06 - Devices, other than using radiation, for detecting or locating foreign bodies
• G01R 33/09 - Magneto-resistive devices
• G01R 33/02 - Measuring direction or magnitude of magnetic fields or magnetic flux
• A61B 34/20 - Surgical navigation systemsDevices for tracking or guiding surgical instruments, e.g. for frameless stereotaxis

Abstract

A device to measure the activity of a radioactive liquid, including a detection module, which extends around a measurement chamber that is intended to contain the liquid, and which is configured to detect ionizing radiation and to generate a detection signal; and a processing unit, which is connected to the detection module, and programmed to estimate an activity of the radioactive liquid based on the detection signal. The detection module comprises a solid-state scintillator detector, extending around the measurement chamber; and at least two photodetectors that are optically coupled to the scintillator detector. The device comprises a capillary tube, extending around a longitudinal axis, the capillary tube being arranged to be placed in a measurement position, and the capillary tube forming the measurement chamber.

IPC Classes  ?

• G01T 1/167 - Measuring radioactive content of objects, e.g. contamination
• G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal

Abstract

An electronic system carrying out a challenge-response type authentication of a user and of a sensor, including the sensor authenticating the user and including a PUF; a memory device memorising valid identification data of the user and of the sensor; a calculator; the electronic system being configured to implement the challenge-response type authentication of the sensor. Response data of the sensor are generated by the PUF of the sensor. Then, once the sensor is authenticated as being valid, the electronic system implements the challenge-response type authentication of the user, during which data exchanged between the calculator and the sensor are encrypted using a first encryption key calculated based on challenge data of the sensor and the response data of the sensor, the first encryption key being shared between the calculator and the sensor.

IPC Classes  ?

• H04L 9/32 - Arrangements for secret or secure communicationsNetwork security protocols including means for verifying the identity or authority of a user of the system

Abstract

A motorized finger includes a base for fastening to a plate connecting to a robotic arm, a first phalanx connected to the base by at least one first articulation, a second phalanx connected to the first phalanx by at least one second articulation, and a first actuator fastened to the base and connected at least to the first phalanx in order to move the phalanges between two end positions.

IPC Classes  ?

• B25J 15/08 - Gripping heads having finger members

Abstract

A method for detecting one or more anomalies in a structure, including a learning phase that includes obtaining healthy data respectively associated with N distinct sets of conditions of use of the structure; projecting the healthy data into a latent space with a dimension smaller than the dimension of the healthy data; and determining the outline of the set of healthy data projected into the latent space. Further, an operational phase includes obtaining, through a preliminary measurement, test data representative of the current state of the structure; projecting the test data into the latent space; and detecting of at least one current anomaly in the structure as soon as a test data element is outside the outline.

IPC Classes  ?

• G01M 7/02 - Vibration-testing

Abstract

An acoustic transducing device includes: a piezoelectric converter interposed between a front electrode and a rear electrode, the piezoelectric converter being formed from a piezoelectric material; a front aperture arranged in such a way that the front electrode is placed between the piezoelectric material and the front aperture; and a rear component, applied against the rear electrode or forming the rear electrode, the rear component forming an acoustic backing element of the device. The device is configured to transmit an acoustic wave to the front aperture or to detect an acoustic wave propagating from the front aperture. The rear component includes a porous metal having a melting point greater than 200° C.

IPC Classes  ?

• B06B 1/06 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction

Abstract

A device and a method automatically redeploys the geographical coverage of a wireless telecommunications network interconnecting a plurality of wireless mobile devices and a common back base. The method includes: partitioning an initial geographical coverage area of a wireless telecommunications network into sub-areas; assigning a mobile vehicle equipped with a wireless base station to each sub-area, with each mobile vehicle equipped with a wireless base station being connected to the back base via a wireless link, and being positioned in a geographical position offering wireless network coverage over the sub-area to a set of wireless mobile devices; monitoring the tethering of each wireless mobile device to at least one wireless base station of the initial geographical coverage area; determining whether a wireless mobile device is no longer tethered to any wireless base station of the initial geographical coverage area; determining, if the wireless mobile device is no longer tethered to any wireless base station, a geographical position for a mobile vehicle equipped with a wireless base station as a function of the geographical position of the untethered wireless mobile device, with the geographical position allowing wireless network connectivity to be established between the untethered wireless mobile device and the back base; and deploying a mobile vehicle equipped with a wireless base station to the geographical position, with the position defining a new geographical coverage sub-area corresponding to an extension of the initial geographical coverage area.

IPC Classes  ?

• H04W 16/18 - Network planning tools
• H04L 41/40 - Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks using virtualisation of network functions or resources, e.g. SDN or NFV entities
• H04L 43/0811 - Monitoring or testing based on specific metrics, e.g. QoS, energy consumption or environmental parameters by checking availability by checking connectivity
• H04W 84/00 - Network topologies

Abstract

The invention relates to an installation (10) intended for the production of solid oxide stacks (14), which comprises: - an enclosure (12) of main axis A in which the stacks (14) are intended to be placed coaxially with the main axis A; - a first shaft (22) and a second shaft (24) between which the stacks (14) are placed; - heating elements (32) arranged in the enclosure (12), characterized in that the main axis A of the enclosure (12) is horizontal and perpendicular to a vertical axis according to the Earth's gravity, and in that the enclosure (12) comprises means for driving the stacks and shafts (22, 24) in rotation about the main axis A.

IPC Classes  ?

• H01M 8/2404 - Processes or apparatus for grouping fuel cells

Abstract

Disclosed is a process for fabricating a semiconductor device, the process comprising, starting with an initial SOI structure, SOI being the acronym of silicon-on-insulator, the initial SOI structure comprising a silicon substrate (2), a layer of buried oxide (4), abbreviated BOX, and a first upper layer (6) of silicon on the layer of buried oxide (4), forming by epitaxy a first epitaxial layer (8) of the isotope of silicon Si28on the first upper layer (6), a homogenizing anneal via which the first epitaxial layer (8) of the isotope of silicon Si28and the first upper layer (6) of silicon then form a second upper layer with a lower concentration of the isotope Si29 than initially, and thinning the second upper layer.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/762 - Dielectric regions
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

The invention is a driving device with a network of N driving units, each having an energy-storing element and a switching matrix for series or parallel connection. A State of Charge mapping unit measures the state of charge for N elements, identifying a first set with low charge, and a second set. A control unit commands switching matrices through invest and recovery phases in cycles. In each cycle, a stacking sequence configures the network for capacitive load connection. The control unit calculates the sequence so that, during the recovery phase, elements in the first set receive charges from the capacitive load, previously supplied during the invest phase by elements in the second set.

IPC Classes  ?

• H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
• H02M 1/00 - Details of apparatus for conversion
• H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
• H02J 7/34 - Parallel operation in networks using both storage and other DC sources, e.g. providing buffering
• H10N 30/80 - Constructional details

Abstract

A method for accelerating electrons using laser-plasma interaction, wherein at least one laser pulse is directed onto a surface of a target in the condensed state, the surface being covered with a gas layer, the intensity of the at least one pulse being sufficient in order to: in a step A, generate, from the target in the condensed state, a dense plasma; in a step B, after reflection by the dense plasma, generate a wakefield in the gas layer; in a step C, heat the electrons of the dense plasma to an energy such that a bunch of the electrons is injected into the wakefield in order to be accelerated there, the pulse, or at least the pulse intended to be reflected by the dense plasma and to heat the electrons of the latter, being s-polarized and obliquely incident on the target.

IPC Classes  ?

• H05H 15/00 - Methods or devices for acceleration of charged particles not otherwise provided for

Abstract

A quantum device has a plurality of quantum dots arranged in a two-dimensional matrix, a first gate level surmounting the plurality of quantum dots, a second gate level surmounting the first gate level, and a plurality of charge detectors capacitively coupled to the quantum dots. The plurality of charge detectors is integrated in one from among the first and second gate levels, each charge detector comprising a portion located between the gates of the gate level considered. The invention also relates to a method for producing such a quantum device.

IPC Classes  ?

• G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
• G06N 10/20 - Models of quantum computing, e.g. quantum circuits or universal quantum computers

Abstract

The invention relates to a heat exchanger module (1) with two fluid circuits, extending along a longitudinal axis (Z) and comprising: - a shell having a square or rectangular cross section; - a heat exchange structure arranged in the shell, wherein the structure is a triply periodic minimal surface (TPMS) structure having Schwartz-D elementary patterns that define the two fluid circuits; wherein the TPMS structure is oriented such that the interfaces of the Schwartz-D elementary patterns at the periphery of the structure are aligned with the longitudinal edges of the shell.

IPC Classes  ?

• B33Y 80/00 - Products made by additive manufacturing
• F28F 7/02 - Blocks traversed by passages for heat-exchange media
• F28F 9/02 - Header boxesEnd plates

Abstract

The invention relates to a steel conduit pipe (10) configured to transport a gas comprising dihydrogen. On the inner wall (14), the steel comprises a surface barrier layer (20) having a thickness (22) starting from the inner wall (14) and within which the steel has different microstructural parameters than those of the steel outside the surface barrier layer (20) and configured to tend to oppose the passage of gas through the thickness (22) of the surface barrier layer (20). This layer is obtained by performing a mechanical nanostructuring surface treatment by ultrasonic shot peening under the effect of random impacts of spherical balls (26) which are moved in a vibratory manner by an ultrasonic power generator (28). The invention also relates to a method for manufacturing the conduit pipe (10).

IPC Classes  ?

• C21D 1/09 - Surface hardening by direct application of electrical or wave energySurface hardening by particle radiation
• B21D 31/06 - Deforming sheet metal, tubes or profiles by sequential impacts, e.g. hammering, beating, peen forming
• B21D 35/00 - Combined processes according to methods covered by groups
• B21J 5/00 - Methods for forging, hammering, or pressingSpecial equipment or accessories therefor
• C21D 7/06 - Modifying the physical properties of iron or steel by deformation by cold working of the surface by shot-peening or the like
• C21D 8/10 - Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of tubular bodies
• C21D 9/08 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articlesFurnaces therefor for tubular bodies or pipes
• E03B 1/00 - Methods or layout of installations for water supply
• F16L 9/02 - Rigid pipes of metal
• F17D 1/00 - Pipe-line systems
• B24C 1/10 - Methods for use of abrasive blasting for producing particular effectsUse of auxiliary equipment in connection with such methods for compacting surfaces, e.g. shot-peening
• B24C 3/32 - Abrasive blasting machines or devicesPlants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
• F17D 5/06 - Preventing, monitoring, or locating loss using electric or acoustic means

Abstract

A method for electrochemically activating a material comprising hydronium ion-conducting amyloid fibers and glycosylated proteins, in which the method includes placing at least part of the material in contact with a water vapor, electrolyzing at least part of the water vapor which is in contact with the material, and obtaining an activated material. The invention also relates to an activated material obtained in this way and to it use for generating electrical energy.

IPC Classes  ?

• H01M 8/16 - Biochemical fuel cells, i.e. cells in which microorganisms function as catalysts

Abstract

The present invention relates to a method to create an artificial tissue-like structure, said method relying on the use of a first layer A and a second ECM layer B, into or on which is then introduced living cells, which are then cultured in a viscous cell growth medium layer C containing high molecular weight viscous water-soluble polymers formed on top of layer B. The invention also relates to an artificial tissue-like structure obtained from the method as defined above, said structure containing at least a gelled layer B of extracellular matrix (ECM) proteins comprising living cells, covered by a viscous cell growth medium layer C containing molecular weight water-soluble polymers.

IPC Classes  ?

• C12N 5/00 - Undifferentiated human, animal or plant cells, e.g. cell linesTissuesCultivation or maintenance thereofCulture media therefor
• A61L 27/36 - Materials for prostheses or for coating prostheses containing ingredients of undetermined constitution or reaction products thereof
• C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues
• A61L 27/38 - Animal cells

Abstract

The invention relates to a method for preparing a cathode material for a battery, comprising a step of obtaining this cathode material in the form of a mixture of so-called primary particles, with a monomodal size distribution and a volume mean diameter of less than or equal to 2 μm, then a step of shaping said mixture of primary particles by granulation by grinding in a ball mill, in a mixture of organic solvents comprising a polar organic solvent and an apolar organic solvent, the polar organic solvent and the apolar organic solvent being immiscible. The cathode material in particulate form thus obtained has a good electrochemical performance, a low reactivity and a high energy density.

IPC Classes  ?

• H01M 4/04 - Processes of manufacture in general
• H01M 4/02 - Electrodes composed of, or comprising, active material
• H01M 4/1391 - Processes of manufacture of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
• H01M 4/58 - Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFySelection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates
• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers

Abstract

A transmit-array and/or reflect-array antenna, configured to operation in sub-terahertz frequency bands and its manufacturing method. The antenna may include a phase shift unit cell array for a transmit-array antenna having a first substrate on which is fixed by pieces, or equivalently by tiles, a second substrate in which the pieces or tiles have been cut. Thus, the flatness stresses of the assembly surfaces are relaxed, and/or the risk of substrates breaking during their handling is decreased.

IPC Classes  ?

• H01Q 3/30 - Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elementsArrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the distribution of energy across a radiating aperture varying the phase
• H01Q 21/00 - Antenna arrays or systems
• H01Q 21/06 - Arrays of individually energised antenna units similarly polarised and spaced apart

Abstract

Method for parameterizing a photoacoustic detector, the photoacoustic detector comprising: a measurement chamber (10), intended to be occupied by a gas; a laser source (15), configured to illuminate the gas; an acoustic transducer; a processing unit (20), configured to demodulate each detection signal, according to a demodulation parameter, and to estimate the concentration of a target gas species, the method being characterized in that: each illumination parameter and/or each demodulation parameter form acquisition parameters respectively associated with each detection signal; the method comprises a parameterizing phase, implemented by the processing unit, making it possible to define at least one acquisition parameter so as to minimize a measurement error.

IPC Classes  ?

• G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated

Abstract

A substrate is provided, including: a first layer based on a semiconductive material; a second layer surmounting the first layer; and a plurality of buried vias extending from the second layer over a portion of the first layer, each via of the plurality of buried vias being delimited by a side wall, a bottom wall, and an upper wall opposite the bottom wall, each via having at least one transverse dimension less than or equal to 30 μm. A method for manufacturing the substrate is also provided. A method for manufacturing a microelectronic device is also provided.

IPC Classes  ?

• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 23/31 - Encapsulation, e.g. encapsulating layers, coatings characterised by the arrangement

Abstract

A method of manufacturing an optoelectronic or photovoltaic device, including the following successive steps: a) forming, by PLD deposition, an active layer comprising a perovskite material on the upper side of a first charge transport layer; b) depositing, by PLD, a second charge-transport layer of inorganic material on the top face of the active layer.

IPC Classes  ?

• H10F 71/00 - Manufacture or treatment of devices covered by this subclass
• C23C 14/06 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
• C23C 14/08 - Oxides
• H10F 77/12 - Active materials

Abstract

A system, method, and device for driving a converter including two input terminals, two output terminals, a piezoelectric resonator, and a plurality of switches connected to the resonator, a first switch being connected between an input terminal and the resonator and switchable between an open position and a closed position where an input voltage is applied to the resonator. The device includes a module for measuring an output variable, a module for controlling a switching of the switches to alternate phases with a substantially constant voltage and a substantially constant load at the terminals of the resonator, and a module for detecting a characteristic event dependent on the output variable. In the event of detection of the event, the control module commands the first switch into the open position for the duration of at least one resonance cycle.

IPC Classes  ?

• H02M 1/088 - Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
• H02M 1/00 - Details of apparatus for conversion
• H02M 3/00 - Conversion of DC power input into DC power output

Abstract

A magnetoresistive sensor sensitive to an out-of-plane applied magnetic field includes a sensing layer; a reference layer with a fixed magnetization, the direction of the fixed magnetization being perpendicular to the plane of the reference layer; a non-magnetic spacer layer separating the sensing layer and the reference layer; the sensing layer having spontaneously a magnetization vortex configuration in the absence of an applied magnetic field, the vortex core diameter varying in the presence of an applied magnetic field perpendicular to the plane of the reference layer.

IPC Classes  ?

• G01R 33/09 - Magneto-resistive devices
• G01R 33/00 - Arrangements or instruments for measuring magnetic variables
• H01F 10/32 - Spin-exchange-coupled multilayers, e.g. nanostructured superlattices

Abstract

A method for depositing a film on a substrate, which includes the steps of forming a film using a liquid composition that includes a neutral surfactant and a charged lamellar compound, placing the film in contact with the substrate and depositing the film on substrate. Also, a process for analyzing a substrate onto which a film has been deposited by the method.

IPC Classes  ?

• C09D 1/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
• C08K 3/32 - Phosphorus-containing compounds
• C09D 7/45 - Anti-settling agents
• C09D 7/65 - Additives macromolecular

Abstract

A method for fabricating a microelectronic device includes: producing a structure with a support provided with a semiconductor layer of a first level of components and another semiconductor layer of a second level, the other semiconductor layer including a lower sublayer contacting the insulating layer and an upper sublayer disposed on the lower sublayer, one of the lower and upper sublayers made from crystalline material while another of the lower and upper sublayers made from amorphous material; forming a transistor gate block on the semiconductor layer; forming, on either side of the gate block, by implanting dopants in the semiconductor layer, doped regions on either side of a semiconductor region facing the gate block for accommodating a channel of the transistor; and implementing heat treatment to recrystallize the second semiconductor sublayer while using the first semiconductor sublayer as a start region of a crystalline front while activating the dopants.

IPC Classes  ?

• H10D 30/01 - Manufacture or treatment
• H10D 62/40 - Crystalline structures
• H10D 88/00 - Three-dimensional [3D] integrated devices

Abstract

A holding device for a piezoelectric resonator making it possible to minimise the deformation energy which is transmitted to it by the operating resonator, while enabling the resumption of the electrical connections at the electrodes of the resonator. In addition, the holding device proposed tends to reduce the size of the total system, i.e. of the resonator in its holding device, which is a crucial challenge for the desired reduction of volume, in particular when the holding device and the resonator form at least one part of a power converter.

IPC Classes  ?

• H03H 9/05 - Holders or supports

Abstract

Guide bearing with multiple pressure measurement points, System for measuring the viscosity or the Reynolds number of a fluid, with a rod guided by the bearing, Application to monitoring in bio-production. A guide bearing of central axis (X), including a ring, intended to be mounted tightly in a holding structure, the inner surface of which is designed for assembling with a clearance fit, and preferably guiding in translation along the axis X, a tube intended to constitute a measurement rod; an angulation element formed integrally or fixed inside the inner surface of the ring by protruding into it, so as to form an angulation axis of the tube relative to the axis X; a plurality of pressure sensors each designed to measure a point of pressure exerted by a contact point of the tube in one of its angular positions, the pressure sensors being distributed along the inner surface of the ring, on either side of the angulation element.

IPC Classes  ?

• G01N 11/10 - Investigating flow properties of materials, e.g. viscosity or plasticityAnalysing materials by determining flow properties by moving a body within the material
• F16C 29/04 - Ball or roller bearings

Abstract

A phased array reconfigurable antenna, intended to operate in sub-terahertz frequency bands, and more specifically, a tuneable unit cell array for a reconfigurable antenna and its manufacturing method. The radiating element array excited by controllable phase-shift signals (in a set of discrete values) includes a first molten silica-or quartz-based substrate, at least one pad coming from a cutting in a second molten silica-or quartz-based substrate, each pad being fixed to the first substrate to form a tuneable unit cell of the array, each cell including at least one phase change material switch. The antenna has application in medical imaging and industrial control, Earth and deep space observation, and for radars and broadband telecommunication systems.

IPC Classes  ?

• H01Q 21/06 - Arrays of individually energised antenna units similarly polarised and spaced apart
• H01Q 3/36 - Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elementsArrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the distribution of energy across a radiating aperture varying the phase by electrical means with variable phase-shifters
• H01Q 21/00 - Antenna arrays or systems

Abstract

Resonator (30) including: an actuator (38), a resonant structure (31) configured to oscillate by being periodically deformed at a resonant frequency (fr), because of the effect of the actuator, a peripheral light guide (32) extending around the resonant structure and configured to oscillate, by deforming periodically, being driven by the resonant structure, the resonator being characterised in that: the resonant structure (31) is thicker than the peripheral light guide, the peripheral light guide is held at a distance from the resonant structure by at least one ancho.

IPC Classes  ?

• H03H 9/17 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
• G02F 1/01 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour

Abstract

An assembly for detecting volatile compounds in a gaseous fluid includes a detector for detecting vapours, equipped with a suction tube, and a vapour-sampling optimisation device. This vapour-sampling optimisation device has an end piece with a body having a through-passage extending along an axis in a suction direction and configured to accept the suction tube. The device also has a fluidic network with an inlet in fluidic communication with at least one outlet. When the gaseous fluid is injected into the end piece via the inlet of the fluidic network, the network forms a jet of gaseous fluid which is ejected from the end piece on either side of the suction direction. Each jet forms an angle of 10° to 90° in absolute value with the axis of the suction direction, so that the jet ejected from the end piece moves away from the suction axis.

IPC Classes  ?

• G01N 1/22 - Devices for withdrawing samples in the gaseous state
• G01N 1/02 - Devices for withdrawing samples
• G01N 1/24 - Suction devices

Abstract

The invention relates to an inertial sensor comprising a substrate extending along a rotation direction and a drive excitation direction, a first and a second drive frames, an excitation device, a first and a second proof mass hingedly connected to the first and second drive frames along a first and a second connection axis respectively, a lever pivotably mounted around a fulcrum axis, strain gauges mechanically stressed by the lever when said lever is rotating around the fulcrum axis, wherein the first proof mass is rotationally connected to the lever along a first coupling axis, the second proof mass is rotationally connected to the lever along a second coupling axis, the first connection axis is further away from the fulcrum axis than the first coupling axis, the second connection axis is further away from the fulcrum axis than the second coupling axis.

IPC Classes  ?

• G01C 19/5747 - Structural details or topology the devices having two sensing masses in anti-phase motion each sensing mass being connected to a driving mass, e.g. driving frames

Abstract

A robotic gripper including one or more fingers and at least one actuator for acting on the fingers in order to grip an object, the gripper including at least one sensor sensitive to a relative movement between the object manipulated by the gripper and the latter, this sensor delivering an output signal, a control system configured to execute at least one machine-learning algorithm trained to deliver, based on the one or more output signals generated by the one or more sensors, at least one slippage-detection score representative of the confidence of the algorithm in the presence of slippage, and to transmit control data to the actuators controlling the one or more fingers, the control data being generated so as to relate the strength of the forces applied by the one or more fingers to said score.

IPC Classes  ?

• B25J 15/10 - Gripping heads having finger members with three or more finger members
• B25J 9/16 - Programme controls
• B25J 13/08 - Controls for manipulators by means of sensing devices, e.g. viewing or touching devices

Abstract

The invention essentially consists in integrating, into a receptacle (6), at least one electrochemical stack containing solid-oxide electrochemical cells (1), which stack is intended to operate at high temperature as an electrolysis or co-electrolysis reactor, a volume around the at least one electrochemical stack being filled with a material, at least one vitreous matrix of which material will act as a second gas-tight barrier, i.e. as an additional barrier to the barriers formed by the seals around the cathode and anode compartments of the stack.

IPC Classes  ?

• H01M 8/2475 - Enclosures, casings or containers of fuel cell stacks
• C25B 1/04 - Hydrogen or oxygen by electrolysis of water
• C25B 9/70 - Assemblies comprising two or more cells
• H01M 8/2485 - Arrangements for sealing external manifoldsArrangements for mounting external manifolds around a stack

Goods & Services

Passeports numériques de produits; passeports électroniques de produits; passeport numérique constitué de données lisibles par machine au moyen d’un format (support de données) de type code-barres 2D, NFC ou Rain RFID; supports d'informations [codés ou magnétiques]; bandes d'identification codées; étiquettes munies de codes lisibles par des machines; étiquettes munies de puces RFID intégrées; étiquettes d'identification par radiofréquence [étiquettes IRF]; appareils et équipements pour le traitement de l’information; lecteurs [équipements de traitement de données]; logiciels; podcasts; matériel de cours éducatif téléchargeable. Services de conseils et informations en organisation et direction des affaires; conseils en gestion et organisation dans le domaine de la digitalisation; organisation d'expositions à buts commerciaux ou de publicité; organisation de salons professionnels à buts commerciaux ou de publicité; diffusion de matériel publicitaire et promotionnel; diffusion d'informations commerciales; services de réseautage d'affaires; services de lobbying commercial; services de publicité, de marketing et de promotion; marketing d'influence. Services d'éducation et de formation, mise à disposition de formations et préparation et coordination de cours de formation dans le domaine des passeports produits numériques; organisation et gestion de conférences commerciales et professionnelles; production de podcasts; création [rédaction] de contenu pédagogique pour podcasts; mise à disposition de matériel éducatif; publication de matériel éducatif accessible via des bases de données ou Internet; publication de produits imprimés, également sous forme électronique, autre qu'à des fins publicitaires. Services de recherche et développement en matière de passeport numérique; services scientifiques et technologiques; services de programmation informatique, de développement, de conception et d’implémentation de logiciels dans le domaine du passeport numérique; services de tatouages numériques; conversion multiplateforme de contenu numérique en d'autres formes de contenu numérique; conception de systèmes d'information; services des technologies de l'information; services de consultation, de conseil et d'information en matière de technologie de l'information; installation et mise à jour de programmes de traitement de l'information; mise à disposition d'informations concernant la conception et le développement de logiciels, de réseaux et de systèmes informatiques; recherche dans le domaine des technologies de l'information; service d'information en matière de technologie de l'information; services de conseils technologiques en transformation numérique; services de test pour la certification de qualité ou de normes; expertise technique [travaux d'ingénieurs] dans le domaine du passeport produit numérique; études environnementales; services d'ingénierie environnementale.

Goods & Services

Software; Application software; Downloadable software applications; Graphical user interface software; Virtual and augmented reality software; Data and file management and database software; Software for monitoring, analysing, controlling and running physical world operations; Artificial intelligence software; Computer software platforms, recorded or downloadable; Data processing equipment and computers; All the aforesaid goods being for use in the design, modelling, control and optimisation of multi-vector energy systems. Data processing, systematisation and management In the field of design, modelling, control and optimisation of multi-vector energy systems. Software as a service [SaaS]; Software design and development; Technical surveys; Engineering services; Research and development services; Technological consultancy; Energy auditing; All the aforesaid services being provided in the field of design, modelling, control and optimisation of multi-vector energy systems.

Abstract

The invention relates to a tubular reactor (10) comprising: a casing (12), extending along a main axis (20); and an insert (14) placed in said casing, the casing (12) and the insert (14) delimiting an intermediate space (28), able to contain a bed (16) of catalytic powder. The insert (14) comprises a first (30, 34) and a second tubes, extending along a secondary axes; and the reactor also comprises a support (15) placed in the intermediate space (28) and fixed to each of the tubes, the support maintaining said tubes so that each secondary axis extends parallel to the main axis (20).

IPC Classes  ?

• B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds
• B01J 8/06 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds in tube reactorsChemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds the solid particles being arranged in tubes

Abstract

The invention relates to a method for producing a microelectronic device on a FD-SOI substrate, wherein the method comprises: forming, in the substrate (11) of a first wafer, first wells made of insulating material suitable for forming shallow trench isolations (STIs) (14); forming, on a second wafer, a strained silicon film (23) (sSi) covered with an oxide layer (24); bonding the second wafer to the first wafer, after vertical flipping, whereby the oxide layer becomes a buried oxide layer (BOX), covered by the sSi film, which thus becomes a strained silicon film on insulator; removing the donor substrate while leaving the BOX layer and the sSi film; and forming second trench isolations SSTIs (34) by locally oxidising the silicon of the sSi film, which join to the STIs via the BOX, to form complex isolation structures (STI-BOX-SSTI).

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H10D 86/01 - Manufacture or treatment

Abstract

A method for manufacturing an electrochemical cell, comprising the following steps: • - providing a first element (30, 30.1) comprising a first rib (34, 36, 34.1, 36.1, 34.2, 36.2) bordered by two first linking portions (37, 38, 39, 40, 37.1, 38.1, 39.1, 40.1, 37.2, 38.2, 39.2, 40.2); • - providing a second element (50, 50.1) comprising a second rib (54, 56, 54.1, 56.1, 54.2, 56.2) bordered by two second linking portions (57, 58, 59, 60, 57.1, 58.1, 59.1, 50.1, 57.2, 58.2, 59.2, 60.2); • - placing the first element (30, 30.1) opposite the second element (50, 50.1), and • - producing a first junction of a first linking portion (37, 38, 39, 40, 37.1, 38.1, 39.1, 40.1, 37.2, 38.2, 39.2, 40.2) on a second linking portion (57, 58, 59, 60, 57.1, 58.1, 59.1, 50.1, 57.2, 58.2, 59.2, 60.2) by a friction welding method. The invention further relates to an electrochemical cell thus obtained.

IPC Classes  ?

• H01M 8/0213 - Gas-impermeable carbon-containing materials
• H01M 8/0221 - Organic resinsOrganic polymers
• H01M 8/0226 - Composites in the form of mixtures
• H01M 8/2404 - Processes or apparatus for grouping fuel cells
• H01M 8/10 - Fuel cells with solid electrolytes

Abstract

The invention relates to an interconnector partition plate (1) comprising an upper face and a lower face, parallel to each other and extending along a main plane, characterized in that it comprises a central part extending along the main plane and an edge integrally surrounding the central part, the edge being folded to form a non-zero angle A with the main plane. The invention also relates to the interconnector (100) for an electrolyser comprising the partition plate, an upper plate (101) in contact with the upper face (2) of the partition plate (1) and a lower plate (102) in contact with the lower face (3) of the partition plate (1). The invention also relates to a stack (300) comprising at least two interconnectors (100) and at least one elementary electrochemical cell (200) positioned between the interconnectors (100) and an electrolyser comprising the stack, an upper end plate (312) and a lower end plate (311).

IPC Classes  ?

• H01M 8/0206 - Metals or alloys
• C25B 1/042 - Hydrogen or oxygen by electrolysis of water by electrolysis of steam
• C25B 9/65 - Means for supplying currentElectrode connectionsElectric inter-cell connections
• C25B 9/75 - Assemblies comprising two or more cells of the filter-press type having bipolar electrodes
• H01M 8/0282 - Inorganic material
• H01M 8/0286 - Processes for forming seals
• H01M 8/0297 - Arrangements for joining electrodes, reservoir layers, heat exchange units or bipolar separators to each other
• H01M 8/2404 - Processes or apparatus for grouping fuel cells
• H01M 8/2432 - Grouping of unit cells of planar configuration
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte

Abstract

The present invention relates to a control of an electrical energy converter including at least one elementary piezoelectric converter, such as a control cycle equal to s+1 resonance periods of the piezoelectric assemblies, s being an integer greater than or equal to zero, which includes at least two phases at substantially constant voltage per control half-cycle, a first control half-cycle including a first phase (II) with a substantially constant voltage of a first voltage value and a first duration and a second phase (IV) with a substantially constant voltage of a second voltage value and a second duration, a second control half-cycle including a third phase (VI) with a substantially constant voltage of a value opposite to the first voltage value and a duration substantially equal to the first duration and a fourth phase (VIII) with a substantially constant voltage of a value opposite to the second voltage value and a duration substantially equal to the second duration.

IPC Classes  ?

• H02M 1/00 - Details of apparatus for conversion
• H02M 3/00 - Conversion of DC power input into DC power output
• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only

Abstract

The invention relates to a method for direct bonding between two substrates, the method comprising the following steps: (a) providing a first substrate and a second substrate respectively comprising a first bonding surface made of hydrophilic silicon oxide and a second bonding surface made of hydrophilic silicon oxide; (b) depositing a specific compound on the first bonding surface made of hydrophilic silicon oxide, the specific compound being an organic compound consisting of a basic functional group and substituents of the basic functional group, each substituent being a hydrophobic group; (c) bringing the first bonding surface made of hydrophilic silicon oxide, on which the specific compound has been deposited, into contact with the second bonding surface made of hydrophilic silicon oxide, so as to adhere the first substrate to the second substrate.

IPC Classes  ?

• C09J 5/00 - Adhesive processes in generalAdhesive processes not provided for elsewhere, e.g. relating to primers
• C09J 5/02 - Adhesive processes in generalAdhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
• C09J 5/06 - Adhesive processes in generalAdhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
• H01L 21/3105 - After-treatment
• H01L 21/762 - Dielectric regions
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth

Abstract

The invention relates to a method for directly bonding two substrates, the method comprising the following steps: (a) providing a first substrate and a second substrate respectively comprising a first hydrophilic silicon oxide bonding surface and a second hydrophilic silicon oxide bonding surface; (b) depositing a specific compound on the first hydrophilic silicon oxide bonding surface, the specific compound being derived from the ammonia molecule or the ammonium ion by at least the substitution of a hydrogen atom with a hydroxyl -OH group and/or an amino -NH2 group, the specific compound not comprising carbon atoms; and (c) bringing the first hydrophilic silicon oxide bonding surface on which the specific compound has been deposited into contact with the second hydrophilic silicon oxide bonding surface, so that the first substrate is adhered to the second substrate.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The invention relates to a method for directly bonding two substrates, the method comprising the following steps: a) providing a first substrate and a second substrate comprising, respectively, a first bonding surface made of hydrophilic silicon oxide and a second bonding surface made of hydrophilic silicon oxide, b) adding fluoride ions to the first hydrophilic silicon oxide bonding surface; c) bringing the first hydrophilic silicon oxide bonding surface into contact with the second hydrophilic silicon oxide bonding surface, so that the first substrate is adhered to the second substrate, by way of the fluoride ions at the bonding interface.

IPC Classes  ?

• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
• H01L 21/762 - Dielectric regions
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The present description concerns a method of detecting a useful signal, the method comprising the acquisition of a raw signal, by a sensor; the delivery of the raw signal, to a processing device, the signal being represented by a tensor of order d greater than or equal to 3; the computing of an invariance value associated with the tensor, the invariance value being computed based on at least one trace invariant for tensors of order d; the comparison of the invariance value associated with the tensor with a first reference value; based on the comparison, the provision, by the processing device, of an estimate of the signal-to-noise ratio of the raw signal; and if the estimated signal-to-noise ratio is different from 0, the provision of the tensor to a circuit configured to process the raw signal.

IPC Classes  ?

• G06T 5/70 - DenoisingSmoothing

Abstract

An NPF radiofrequency device includes a first end terminal E1, four first branches BR10, BR11, BR12, BR13 connected to E1 and each including a capacitor, respectively C0, C1, C2, C3, having the same capacitance, including a first terminal and a second terminal connected to ground, and a switch arranged between E1 and the first terminal of the capacitor of the first branch; the device being designed to, in each first branch BR1i, close the switch at each time pT0+(i)T0/4, for T0/4, where p is a natural number and T0 is the period of the clock signal; the device including at least two successive second branches from among an ordered set of second branches BR20, BR21, BR22, BR23, the second branch BR2i including a second end terminal E2i, and each second branch BR2k of the device including, for each first branch, BR11, i=0 to 3, a switch between the first terminal of the capacitor Ci and the second branch, the device being designed to close the switch at each pT0+(i+k)T0/4, for T0/4.

IPC Classes  ?

• H03K 17/56 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices
• H03H 7/06 - Frequency selective two-port networks including resistors

Abstract

The invention relates to a manifold base (2) for a solid oxide electrochemical reactor, wherein the base is formed from an assembly of layers of material (9) stacked in a sealed manner along a stacking direction, and: - at least one of these layers of material (9) comprises a longitudinal groove passing through the thickness of the layer of material (9), and forming a longitudinal flow duct that is substantially perpendicular to the stacking direction; - at least one of these layers of material (9) comprises a transverse port forming a transverse duct through the thickness of the layer of material (9), wherein this transverse duct extends substantially along the stacking direction and is arranged facing the longitudinal flow duct.

IPC Classes  ?

• C25B 1/042 - Hydrogen or oxygen by electrolysis of water by electrolysis of steam
• H01M 8/2484 - Details of groupings of fuel cells characterised by external manifolds
• H01M 8/04082 - Arrangements for control of reactant parameters, e.g. pressure or concentration
• H01M 8/04007 - Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids related to heat exchange
• H01M 8/04089 - Arrangements for control of reactant parameters, e.g. pressure or concentration of gaseous reactants
• H01M 8/04014 - Heat exchange using gaseous fluidsHeat exchange by combustion of reactants
• C25B 9/77 - Assemblies comprising two or more cells of the filter-press type having diaphragms
• C25B 15/08 - Supplying or removing reactants or electrolytesRegeneration of electrolytes
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte

Abstract

The present invention relates to an electronic device for controlling an electrical energy converter, which is configured, for a control cycle equal to s+1 resonance periods of the piezoelectric assemblies, s being an integer greater than or equal to zero, to control at least two phases at substantially constant voltage per control half-cycle, a first control half-cycle including a first phase (II) with a substantially constant voltage of a first voltage value and a first duration and a second phase (IV) with a substantially constant voltage of a second voltage value and a second duration, a second control half-cycle including a third phase (VI) with a substantially constant voltage of a value opposite to the first voltage value and a duration substantially equal to the first duration and a fourth phase (VIII) with a substantially constant voltage of a value opposite to the second voltage value and a duration substantially equal to the second duration.

IPC Classes  ?

• H02M 1/00 - Details of apparatus for conversion
• H02M 3/00 - Conversion of DC power input into DC power output
• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 1/12 - Arrangements for reducing harmonics from AC input or output

Abstract

inoutinout1231231231231231233), between two terminals among the first input terminal (44), the second input terminal (46), the first output terminal (48) and the second output terminal (50).

IPC Classes  ?

• H02M 1/00 - Details of apparatus for conversion
• H02M 3/00 - Conversion of DC power input into DC power output

Abstract

A method for controlling a network aggregating sub-networks, with peripheral agents and a central agent, a peripheral agent locally controlling a sub-network, and the central agent overall controlling the network, including the steps of: each peripheral agent performing a local optimization, by distinguishing internal xi and external zi and transmitting: the locales optimal values of the external variables zil*, lower and upper bounds of the external variables zi∨* and zi∧*, and a value of a local cost function on local optimal values of internal variables fxi(xil*), lower and upper bounds of the internal variables fxi(xi∨*) and fxi(xi∧*); the central agent performing an overall optimization over all the external variables zi by distributing the contribution of each sub-network by taking into account, for each sub-network, of a deviation from the local cost function evaluated from information transmitted by the corresponding peripheral agent and transmitting the overall optimal values of the external variables zig*.

IPC Classes  ?

• H02J 3/06 - Controlling transfer of power between connected networksControlling sharing of load between connected networks
• H02J 3/38 - Arrangements for parallelly feeding a single network by two or more generators, converters or transformers
• H02J 13/00 - Circuit arrangements for providing remote indication of network conditions, e.g. an instantaneous record of the open or closed condition of each circuitbreaker in the networkCircuit arrangements for providing remote control of switching means in a power distribution network, e.g. switching in and out of current consumers by using a pulse code signal carried by the network

Abstract

The present invention relates to a method for optimizing a reconfigurable intelligent surface, comprising the following successive steps: for a current configuration of said reconfigurable intelligent surface, the acquisition (62) of at least one measurement of the multi-path propagation channel associated with the communication and/or location system comprising at least said reconfigurable intelligent surface, at least one transmitter and at least one receiver; on the basis of said acquisition, estimation of said multi-path channel; within said multi-path channel estimation, isolation of the component of said reconfigurable intelligent surface; computation of a cost function using said isolated component; said successive steps being reiterated after modification, at each iteration, of said current configuration, until a predetermined stopping criterion is reached, the optimal configuration being associated with the iteration the cost value of which is maximum.

IPC Classes  ?

• H04B 7/04 - Diversity systemsMulti-antenna systems, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
• H04L 25/02 - Baseband systems Details

Abstract

A method for determining parameters governing the transport properties of charge carriers in an ionising radiation detector. The method involves irradiating the detector and simulating a propagation of charge carrier clouds towards electrodes of the detector, so as to compare the signal resulting from the simulation and the measured signal. This allows an error to be defined, which error is backpropagated to the site of the interaction in the detector. During the backpropagation, the transport parameters of the charge carriers are updated, so as to minimise the error. The propagation/backpropagation operation is iterative and continues until a stop criterion for stopping the iterations is met.

IPC Classes  ?

• G01T 1/24 - Measuring radiation intensity with semiconductor detectors
• G01T 7/00 - Details of radiation-measuring instruments

Abstract

Peristaltic pump, intended to pump a liquid along a capillary (2), the pumping resulting from a stress exerted on the capillary, successively along a pumping direction, the pump comprising: K annular piezoelectric transducers (11k), extending about a central axis (Δ), K resonators (10k), formed from a deformable solid material, each resonator being connected to a piezoelectric transducer, and extending about the central axis, becoming thinner towards the central axis, each resonator being configured to deform under the effect of the polarization of the piezoelectric transducer to which it is connected; a control unit (20), configured to polarize each piezoelectric transducer; the pump being characterized in that: each resonator is connected to a sleeve (3K), extending about the central axis; each resonator is arranged so that the sleeves of each resonator are aligned along a central axis.

IPC Classes  ?

• F04B 43/14 - Machines, pumps, or pumping installations having flexible working members having peristaltic action having plate-like flexible members
• F04B 43/00 - Machines, pumps, or pumping installations having flexible working members
• H10N 30/20 - Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
• H10N 30/50 - Piezoelectric or electrostrictive devices having a stacked or multilayer structure

Abstract

A method for manufacturing a ferroelectric storage device includes depositing a first layer, depositing a first layer of ferroelectric material, depositing an intermediate layer onto the first layer of ferroelectric material, removing a first part of the intermediate layer so as to expose a part of the first layer of ferroelectric material, depositing a second layer of ferroelectric material onto the intermediate layer and onto the part exposed of the first layer of ferroelectric material, removing a second part of the intermediate layer so as to form a layer of ferroelectric material including a first part of a first thickness and a second part of a second thickness, the first and second thicknesses being distinct, depositing a second layer, the layer of ferroelectric material extending between the first layer and the second layer.

IPC Classes  ?

• H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels

Abstract

A method for manufacturing a ferroelectric storage device includes depositing a first layer, depositing, by a physical vapour deposition method, a layer of ferroelectric material, the layer of ferroelectric material including a first part having a first thickness and a second part having a second thickness, the first thickness and the second thickness being distinct, and depositing a second layer, the layer of ferroelectric material extending between the first layer and the second layer.

IPC Classes  ?

• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
• H10B 63/00 - Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

A quantum electronic device provided with: A quantum electronic device provided with: a first set of semiconductor regions (102L, 104L) comprising a first lower semiconductor region (102L) and a first upper semiconductor region (104L), superimposed on, and separated from, the first lower semiconductor region via a first dielectric ‘separation’ zone (ZS1), A quantum electronic device provided with: a first set of semiconductor regions (102L, 104L) comprising a first lower semiconductor region (102L) and a first upper semiconductor region (104L), superimposed on, and separated from, the first lower semiconductor region via a first dielectric ‘separation’ zone (ZS1), a second set of semiconductor regions (102R, 104R) comprising a second lower semiconductor region (102R) and a second upper semiconductor region (104R), superimposed on, and separated from, the first lower semiconductor region via a second dielectric “separation” zone (ZS2), A quantum electronic device provided with: a first set of semiconductor regions (102L, 104L) comprising a first lower semiconductor region (102L) and a first upper semiconductor region (104L), superimposed on, and separated from, the first lower semiconductor region via a first dielectric ‘separation’ zone (ZS1), a second set of semiconductor regions (102R, 104R) comprising a second lower semiconductor region (102R) and a second upper semiconductor region (104R), superimposed on, and separated from, the first lower semiconductor region via a second dielectric “separation” zone (ZS2), the first set of semiconductor regions (102L, 104L) being disposed opposite the second set of semiconductor regions (102R, 104R), A quantum electronic device provided with: a first set of semiconductor regions (102L, 104L) comprising a first lower semiconductor region (102L) and a first upper semiconductor region (104L), superimposed on, and separated from, the first lower semiconductor region via a first dielectric ‘separation’ zone (ZS1), a second set of semiconductor regions (102R, 104R) comprising a second lower semiconductor region (102R) and a second upper semiconductor region (104R), superimposed on, and separated from, the first lower semiconductor region via a second dielectric “separation” zone (ZS2), the first set of semiconductor regions (102L, 104L) being disposed opposite the second set of semiconductor regions (102R, 104R), at least one dielectric region (RD) separating the first set of semiconductor regions (102R, 104R) from the second set of semiconductor regions (102R, 104R).

IPC Classes  ?

• H10N 60/10 - Junction-based devices
• B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• H10N 60/01 - Manufacture or treatment

Abstract

A method for producing and transferring a two-dimensional material, includes growing a two-dimensional material on a surface of a growth substrate such that the two-dimensional material is linked to the surface of the growth substrate by van der Waals forces, the surface of the growth substrate having a first contact angle with a drop of a liquid; providing a target substrate, the target substrate having a surface with a second contact angle with a drop of the liquid, the second contact angle being strictly greater than the first contact angle; assembling the growth substrate and the target substrate by direct bonding between the two-dimensional material and the surface of the target substrate; and breaking the interface between the growth substrate and the two-dimensional material by propagating an interfacial crack at the interface between the two-dimensional material and the growth substrate, the crack front being wetted with the liquid.

IPC Classes  ?

• C23C 16/01 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. on substrates subsequently removed by etching
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A quantum electronic device including a first set of semiconductor regions, a second set of semiconductor regions, the first set of semiconductor regions being disposed opposite the second set of semiconductor regions. Further, at least one dielectric region separates the first set of semiconductor regions from the second set of semiconductor regions, said dielectric region being provided with a heterogeneous composition so as to prevent electrostatic coupling between a first lower semiconductor region and a second upper semiconductor region, and so as to prevent electrostatic coupling between a first semiconductor region and a second lower semiconductor region.

IPC Classes  ?

• H10N 60/10 - Junction-based devices
• B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• H10N 60/01 - Manufacture or treatment

Abstract

A method of forming hydrophobic zones including the following steps: providing a structure comprising a substrate of interest bonded to a temporary substrate, the temporary substrate including a base substrate locally covered with pads and with raised elements having a height lower than the height of the pads, the raised elements surrounding the pads and extending to the edge of the temporary substrate, interstices separating the substrate of interest from the raised elements,bringing into contact the structure with a solution comprising a hydrophobic compound or an etchant, whereby the solution seeps into the interstices and hydrophobic zones are formed on the substrate of interest opposite the raised elements.

IPC Classes  ?

• H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching

Abstract

An electromechanical system includes a frame; a first element that is movable relative to the frame; and capacitive measurement or actuation system including a first electrode movable relative to the frame; and at least one electrode fixed relative to the frame and separated from the first movable electrode by a first dielectric medium; a first movement transmission device connecting the first movable element to the first movable electrode, the first transmission device being rotatably movable relative to the frame with a plurality of first pivot hinges; a second element movable relative to the frame, the second movable element being connected to the capacitive measurement or actuation system.

IPC Classes  ?

• H04R 19/04 - Microphones
• H04R 19/02 - Loudspeakers

Abstract

An on-silicon integrated test structure for characterizing the PDL of a “1 to 2” fiber/silicon optical coupler with a two-dimensional diffraction grating (2DGC), includes the 2DGC to be tested configured as an output coupler, mirrored with another “1 to 2” fiber/silicon optical coupler configured as an input coupler, via planar waveguides coupling their respective guided optical terminals. An adjustable phase shifter is arranged at one of these waveguides. A p- or s-polarized optical signal is input via the input coupler. The adjustable phase shifter is controlled to apply a pure phase shift between 0 and π to the optical signal propagating in this waveguide. The optical signal input to the 2DGC under test then sweeps through all the mixed polarization states. The variation in optical transmission in the 2DGC under test during this sweep gives the PDL.

IPC Classes  ?

• G01M 11/00 - Testing of optical apparatusTesting structures by optical methods not otherwise provided for

Abstract

A method for transferring a thin film onto a support substrate comprises implanting into a donor substrate light species including co-implantation of hydrogen ions at a first dose and a first implantation energy, and helium ions at a second dose and a second implantation energy. Hydrogen ions are also locally implanted at a third dose and a third energy to form an overdosed local region in a buried fragile plane formed by the implanted ions. The donor substrate and the support substrate are assembled by direct bonding to form a bonded structure, and a fracture heat treatment is applied to the bonded structure so as to induce spontaneous separation along the buried fragile plane. The separation leads to the transfer of a thin film from the donor substrate onto the support substrate. The overdosed local region of the buried fragile plane constitutes a starting point for the separation.

IPC Classes  ?

• H01L 21/762 - Dielectric regions

Abstract

The invention relates to a method for producing an optoelectronic device with vertical nanostructures, comprising an active zone (ZA) designed to emit ultraviolet photons from radiative recombinations of electron-hole pairs, or designed to generate electron-hole pairs from absorbed ultraviolet photons; the vertical nanostructures being made of n-type doped gallium nitride GaN, and formed on selective epitaxy zones (SAG) by epitaxial growth; the method comprising a step of selective etching of the vertical nanostructures retaining a remaining portion (30) of each vertical nanostructure, suitable for maintaining a mechanical strength of lateral zones (41) of an electron transport layer made of a III-n alloy comprising aluminium Al.

IPC Classes  ?

• H10H 20/01 - Manufacture or treatment
• H10H 20/818 - Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
• H10H 20/821 - Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
• H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Abstract

The invention relates to a measurement and display device comprising a first electrode and a second electrode, and a screen formed by a plurality of pixels, wherein each pixel comprises three light-emitting diodes emitting in the visible range, a light-emitting diode emitting in the near-infrared range, an infrared photodetector, and a control electronics unit. The first and second electrodes are transparent, are at least partially arranged on the plurality of pixels, and connected to at least one control electronics unit of a pixel in the plurality of pixels. Advantageously, the device is configured to group the pixels according to a measurement zone for a physiological parameter by means of a plurality of programmable control blocks arranged within each pixel.

IPC Classes  ?

• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• A61B 5/024 - Measuring pulse rate or heart rate
• A61B 5/053 - Measuring electrical impedance or conductance of a portion of the body
• A61B 5/282 - Holders for multiple electrodes
• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• G06V 40/13 - Sensors therefor

Abstract

The invention relates to a device and to a method for the dynamic management of resources in a wireless linear or star mesh network, which makes it possible to determine the frequency bands to be used for the different links of the wireless linear mesh network between a rear base BA and the one or more mission vehicles VM, with a view to minimising the interference between the various links and optimising the performance of the network. The method makes it possible to determine the reconfigurations of these frequency bands to be set up within the linear mesh network in the event of adding or removing a relay when moving a VM, and in the event of adding or removing a VM.

IPC Classes  ?

• H04W 16/10 - Dynamic resource partitioning
• H04W 84/18 - Self-organising networks, e.g. ad hoc networks or sensor networks

Abstract

One aspect of the invention relates to a method for determining the mass of a liquid in a container and/or a pipe (1), for example a tank, at least one sensor (11), wherein the mass of the liquid is determined from the density of the liquid and the liquid level in the container and/or the pipe, wherein the density is determined from an estimate of the temperature of the wall (2), as well as from the propagation speed of a second propagation mode of a guided elastic wave that propagates through the wall of the container or of the pipe below the liquid level, and a dispersion curve of this second propagation mode.

IPC Classes  ?

• G01F 23/296 - Acoustic waves
• G01F 23/2962 - Measuring transit time of reflected waves
• G01F 23/2965 - Measuring attenuation of transmitted waves
• G01N 9/24 - Investigating density or specific gravity of materialsAnalysing materials by determining density or specific gravity by observing the transmission of wave or particle radiation through the material
• G01N 29/024 - Analysing fluids by measuring propagation velocity or propagation time of acoustic waves
• G01K 11/24 - Measuring temperature based on physical or chemical changes not covered by group , , , or using measurement of acoustic effects of the velocity of propagation of sound
• G01K 11/22 - Measuring temperature based on physical or chemical changes not covered by group , , , or using measurement of acoustic effects
• G01F 23/80 - Arrangements for signal processing

Abstract

An IR bolometer for UV to soft X-ray power radiation measurement with independent lines of sight A bolometer assembly comprising a collimator structure (4B) having a front surface for entry of radiation into the bolometer assembly, a conversion unit (3) having a first and second opposite faces, the first face (3A) being orientated towards the said front surface, the conversion unit (3) being configured to perform absorption of radiations through the first face in the UV to soft X-ray range and, in reaction to said absorption, emit IR radiations through the second face (3B), the bolometer further comprising an IR detector unit (2) having on an imaging surface several pixels sensors, said imaging surface being directed toward the second face. The collimator structure comprises separate internal ducts (6B) each delimited by walls (6Bw) and each extending from a respective aperture in the front surface to a respective conversion surface of the conversion unit (3). These ducts define the independent lines of sight of the bolometer assembly. Each independent line of sight can be calibrated, giving the UV to IR conversion curve.

IPC Classes  ?

• G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
• G01J 5/061 - Arrangements for eliminating effects of disturbing radiationArrangements for compensating changes in sensitivity by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
• G01J 5/07 - Arrangements for adjusting the solid angle of collected radiation, e.g. adjusting or orienting field of view, tracking position or encoding angular position
• G01J 5/08 - Optical arrangements
• G01J 5/10 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors

Abstract

The invention relates to an effluent collector (5, 5') for recovering effluents in the form of a suspension or solution at the outlet of a microfluidic device (3), comprising: - at least one absorbent paper (8, 8') for receiving the effluents, the absorbent paper being configured such that the received effluents migrate by capillarity into the absorbent paper and then dry, depositing solid objects or the dissolved molecules contained in the effluents on the fibres of the absorbent paper, - a rotating support (7, 7') extending along a longitudinal axis (X, X') and on which the absorbent paper is deposited, the rotating support being configured to move the absorbent paper relative to the discharge duct.

IPC Classes  ?

• B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glasswareDroppers
• B01L 9/00 - Supporting devicesHolding devices

Abstract

One aspect of the invention relates to a method for fabricating a device comprising a plurality of pixels, the method comprising a step of forming a first group of pixels (40) on the substrate (11) comprising the following sub-steps: - depositing, on lower electrodes (41) of the pixels deposited on the substrate, a first stack (421) of organic layers and a first conductive layer (16) on the first stack (421) of organic layers; - etching at least a portion of the first conductive layer to form cavities (30) having a depth strictly less than the thickness of the first conductive layer, the cavities being located in line with spaces extending between lower electrodes of the pixels of the first group; - anisotropic etching of the first conductive layer and of the first stack of organic layers so as to extend the cavities through the first conductive layer and the first stack of organic layers, with residual portions (431) of the first conductive layer remaining between the cavities.

IPC Classes  ?

• H10K 59/12 - Active-matrix OLED [AMOLED] displays
• H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
• H10K 50/19 - Tandem OLEDs
• H10K 59/122 - Pixel-defining structures or layers, e.g. banks
• H10K 71/20 - Changing the shape of the active layer in the devices, e.g. patterning

Abstract

The invention relates to a welding torch (10) comprising: - an electrode (11) which extends along a longitudinal axis (X) and is intended to form an electric arc with a part to be welded, the electrode comprising an internal duct (16) which opens at a free end, the internal duct being configured to circulate and then eject a protective gas, referred to as internal gas, via the free end; - a nozzle (12) which is arranged, preferably coaxially, around the electrode, the nozzle being configured to eject a protective gas, referred to as external gas, from the nozzle to the free end of the internal duct of the electrode; - flow adjustment means for ejecting an internal gas flow (Fint) having a composition and/or flow rate and/or pressure independent of that/those of the external gas ejection flow (Fext).

IPC Classes  ?

• B23K 9/167 - Arc welding or cutting making use of shielding gas and of a non-consumable electrode
• B23K 9/29 - Supporting devices adapted for making use of shielding means
• B23K 9/32 - Accessories
• B23K 10/02 - Plasma welding
• B23K 35/02 - Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
• B23K 9/173 - Arc welding or cutting making use of shielding gas and of consumable electrode

Abstract

The invention relates to a fuel cell comprising a first bipolar plate (BP1) provided with channels, a first electrode (AND) facing the channels of the first bipolar plate, a second bipolar plate (BP2) provided with channels, a second electrode (CTH) facing the channels of the second bipolar plate, and a central proton exchange membrane (MBN) arranged between the first electrode (AND) and the second electrode (CTH), characterized in that the fuel cell comprises at least one grid (GR1, GR2) which has a diamond pattern and is arranged on one of the first bipolar plate (BP1) and the second bipolar plate (BP2). The invention also relates to an associated manufacturing process.

IPC Classes  ?

• H01M 8/0232 - Metals or alloys
• H01M 8/0234 - Carbonaceous material
• H01M 8/10 - Fuel cells with solid electrolytes

Abstract

The invention relates to a module (1) intended to operate at high temperature, with a thermal enclosure in which sub-modules (SM1, SM2) that each comprise a stack of electrochemical cells are housed. At least one hatch (110) for removing heat generated inside the enclosure by the sub-modules in operation makes it possible to manage temperature in a module.

IPC Classes  ?

• H01M 8/18 - Regenerative fuel cells, e.g. redox flow batteries or secondary fuel cells
• H01M 8/2475 - Enclosures, casings or containers of fuel cell stacks
• C25B 1/042 - Hydrogen or oxygen by electrolysis of water by electrolysis of steam
• C25B 9/00 - Cells or assemblies of cellsConstructional parts of cellsAssemblies of constructional parts, e.g. electrode-diaphragm assembliesProcess-related cell features
• C25B 15/021 - Process control or regulation of heating or cooling
• H01M 8/247 - Arrangements for tightening a stack, for accommodation of a stack in a tank or for assembling different tanks

Abstract

nnNN) being the result of execution of the expression of the thread.

IPC Classes  ?

• G06F 8/41 - Compilation
• G06F 17/16 - Matrix or vector computation

Abstract

pVpp iQii i ) dependent on the intensity of a force exerted on the pad at each contact point; and wherein the method comprises estimating the intensity of the force exerted by each contact member at each contact point and generating haptic feedback dependent on each intensity.

IPC Classes  ?

• G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
• G06F 3/0354 - Pointing devices displaced or positioned by the userAccessories therefor with detection of 2D relative movements between the device, or an operating part thereof, and a plane or surface, e.g. 2D mice, trackballs, pens or pucks

Abstract

The invention relates to a method for controlling an interface comprising a pad, the method comprising a) detecting contact on the pad; b) determining a position of the point of contact on the pad; c) on the basis of the position resulting from b), determining a haptic pattern to be applied to the contact member at the point of contact, wherein the haptic pattern comprises a movement of the pad at the point of contact; d) using a processing unit, calculating a control signal to be applied to each actuator so as to produce the haptic pattern at the point of contact, and wherein each actuator induces a progressive bending wave that propagates along the pad so as to create a vibration of the pad at the point of contact, thereby causing the pad to move at the point of contact; e) repeating steps a) to d).

IPC Classes  ?

• G06F 3/01 - Input arrangements or combined input and output arrangements for interaction between user and computer
• G06F 3/0354 - Pointing devices displaced or positioned by the userAccessories therefor with detection of 2D relative movements between the device, or an operating part thereof, and a plane or surface, e.g. 2D mice, trackballs, pens or pucks
• G06F 3/038 - Control and interface arrangements therefor, e.g. drivers or device-embedded control circuitry
• B06B 1/00 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency

Abstract

A cell for a transmit array or a reflect array, the cell comprising an antenna which is a patch antenna or a ring resonator antenna, and at least one memristor which is electrically connected in series with a respective conductive region of the antenna. A transmit array or a reflect array comprising a plurality of cells. A system comprising the array and further comprising a digital controller and, connectable to the digital controller, a corresponding interface circuit for each cell of the plurality of cells, wherein the digital controller in combination with the corresponding interface circuit are configured to controllably set the at least one memristor of each cell to any of a first resistivity state and a second resistivity state.

IPC Classes  ?

• H01Q 3/46 - Active lenses or reflecting arrays
• H01Q 15/14 - Reflecting surfacesEquivalent structures

Abstract

The invention relates to a method for producing an amorphous three-dimensional architecture of the micro-lattice type formed of micro-beams connected together by nodes, which comprises: A) performing (100) a computer-implemented design step consisting, on the basis of a three-dimensional random arrangement (INIT) of non-deformable beads, in: a) producing (101) a three-dimensional random compact stack of said beads; b) for each bead, determining (102) the coordinates of the centre of the bead which correspond to those of a node; c) performing (103) a triangulation with said nodes, each triangle thus being defined with the nodes closest to one another, then associating two nodes connected by one side of a triangle to a micro-beam in order to define the micro-lattice; d) selecting (104) a sub-domain of the micro-lattice obtained in step c), not comprising the nodes located at the edge of the micro-lattice in order to define said amorphous three-dimensional architecture, the design step involving an average connectivity of the nodes greater than or equal to twelve, the design step providing for defining a shape and associated transverse dimensions for each micro-beam; and B) producing (200) the architecture designed in step A).

IPC Classes  ?

• G06F 30/10 - Geometric CAD
• B33Y 10/00 - Processes of additive manufacturing
• B33Y 50/02 - Data acquisition or data processing for additive manufacturing for controlling or regulating additive manufacturing processes
• B33Y 80/00 - Products made by additive manufacturing
• G06F 113/10 - Additive manufacturing, e.g. 3D printing

Abstract

A phase change memory device including a memory point, the latter including a metal layer forming a heating element, a memory layer with the basis of a phase change material and an upper electrode. The device moreover includes a first encapsulation layer extending from a first main flank of the metal layer and having a doped portion with the basis of at least one first doping species. The doped portion extends from the first main flank of the metal layer.

IPC Classes  ?

• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
• H10B 63/10 - Phase change RAM [PCRAM, PRAM] devices
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

A ferroelectric storage device including a first layer, a second layer and a layer of ferroelectric material extending between the first layer and the second layer, the layer of ferroelectric material including a first part having a first thickness and a second part having a second thickness, the first thickness and the second thickness being distinct.

IPC Classes  ?

• H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels

Abstract

Pump (1) intended to pump a fluid between an inlet and an outlet, including: a first annular piezoelectric transducer (11) extending around a central axis (A) and including a first electrode (12); a first resonator (10) connected to the first piezoelectric transducer and extending around the central axis, the first resonator becoming thinner toward the central axis and being deformed by the effect of polarisation of the first piezoelectric transducer; a control unit (30) configured to polarise the first electrode at a polarisation voltage; the first resonator defines a cavity (2) extending around the central axis and configured to receive the fluid; the pump includes at least one channel (4) discharging into the cavity; deformation of the resonator is produced because of the effect of the polarisation of the first piezoelectric transducer, locally and temporarily reducing the thickness of the cavity.

IPC Classes  ?

• F04B 43/04 - Pumps having electric drive
• F04B 43/00 - Machines, pumps, or pumping installations having flexible working members
• H10N 30/20 - Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators

Abstract

Data processing method for obtaining a result with a combination of elementary operations; wherein two encryptions [Enc1,Dec1; Enc2,Dec2] are defined, one indecipherable by a server, the other indecipherable by a TEE; and S1) an emitting client supplies and encrypts an input data item; S2) it sends it under encryption to the server or to the TEE; S3) via data processing, these two computers apply the combination of elementary operations to the encrypted data item received so as to obtain a ciphertext of the result, that they send to a receiving client; S4) the latter deciphers the ciphertext of the result and obtains the result. Data processing method for obtaining a result with a combination of elementary operations; wherein two encryptions [Enc1,Dec1; Enc2,Dec2] are defined, one indecipherable by a server, the other indecipherable by a TEE; and S1) an emitting client supplies and encrypts an input data item; S2) it sends it under encryption to the server or to the TEE; S3) via data processing, these two computers apply the combination of elementary operations to the encrypted data item received so as to obtain a ciphertext of the result, that they send to a receiving client; S4) the latter deciphers the ciphertext of the result and obtains the result. During step S3, the server only processes processed data under encryption indecipherable by the server, and the TEE only processes processed data under encryption indecipherable by the TEE.

IPC Classes  ?

• H04L 9/00 - Arrangements for secret or secure communicationsNetwork security protocols
• H04L 9/14 - Arrangements for secret or secure communicationsNetwork security protocols using a plurality of keys or algorithms
• H04L 9/40 - Network security protocols

Abstract

A quantum electronic device including a first set of semiconductor regions comprising a first lower semiconductor region and a first upper semiconductor region superimposed on, and separated from, the first lower semiconductor region via a first dielectric separation zone, a second set of semiconductor regions comprising a second lower semiconductor region and a second upper semiconductor region superimposed on, and separated from, the first lower semiconductor region via a second dielectric separation zone. The first set of semiconductor regions is disposed opposite the second set of semiconductor regions, and at least one dielectric region separates the first set of semiconductor regions from the second set of semiconductor regions.

IPC Classes  ?

• H10N 60/10 - Junction-based devices
• B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
• H10N 60/01 - Manufacture or treatment

Abstract

The invention relates to a photovoltaic module including a photovoltaic unit having a plurality of photovoltaic cells electrically connected in series and spaced apart from one another, the adjacent photovoltaic cells being electrically connected pairwise by a metal interconnector which extends at least in part into an interconnection space separating said adjacent photovoltaic cells, an encapsulation structure made of a polymer-based encapsulation material, which sandwiches the opposite sides of the photovoltaic cells, defining a region of cell coverage, and the interconnector in the interconnection space, defining a region of interconnector coverage, and a spacer incorporated into the encapsulation structure and partially superposed on the interconnector in the region of interconnector coverage, the spacer being made of a material having, at least at a temperature of −40° C., a modulus of elasticity lower than the modulus of elasticity of the encapsulation material.

IPC Classes  ?

• H10F 19/80 - Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
• H10F 19/90 - Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers

Abstract

One aspect of the invention relates to a field effect transistor (3) comprising: a channel region (11); a source region (12) and a drain region (13); a gate structure (14) comprising: a gate dielectric layer (14b); a gate electrode (14a) with a first work function (W1); and a lateral gate conductor (14c) disposed at least against the flank of the gate electrode (14a) located on the side of the drain region (13), the lateral gate conductor (14c) extending to the gate dielectric layer (14b) in direct contact with the gate electrode (14a) and having a second work function (W2); the second work function (W2) being: strictly greater than the first work function (W1) when the transistor is of type p; strictly lower than the first work function (W1) when the transistor is of type n.

IPC Classes  ?

• H10D 30/67 - Thin-film transistors [TFT]
• H10D 30/01 - Manufacture or treatment

Abstract

An opto-mechanical oscillator, including a first laser light source, emitting a first light beam (F1) at a first wavelength (λ1); a resonator configured to oscillate at a resonant frequency (fr), the resonator being optically coupled to the first light beam so that the resonator collects a fraction of the light propagating in the first beam, the fraction of light being modulated at the resonant frequency; a processing circuit, configured to: receive, as input, the first light beam having propagated along the resonator; generate a feedback signal (Sr) intended to be fed to the resonator; form, by way of output, an output signal (Sout) that is amplitude modulated, at a stabilized modulation frequency.

IPC Classes  ?

• G01D 5/353 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre

Abstract

A method for training a characterization algorithm, configured to characterize a metabolism of at least one strain of microorganism, the method including the following steps: a) placing different microorganisms of the strain in different training samples, the training samples including a culture medium to which a metabolic marker has been added respectively at different concentrations, the metabolic marker being configured to be metabolized by each microorganism, at least one sample being such that it includes no metabolic marker, or at a concentration considered negligible; b) acquisition of training spectra of microorganisms from each training sample; c) from the training spectra acquired in each training sample, parameterization of the characterization algorithm, so as to characterize, from each training spectrum, a metabolism of the microorganism.

IPC Classes  ?

• G16B 40/10 - Signal processing, e.g. from mass spectrometry [MS] or from PCR
• C12Q 1/18 - Testing for antimicrobial activity of a material
• G16B 40/20 - Supervised data analysis

Abstract

The invention relates to a non-intrusive measurement method and device intended to measure a variation in longitudinal force, other than exerted by a hydrostatic pressure, and/or a hydrostatic pressure variation, relating to a host structure of interest, including: - a sensor (3) comprising at least one optical waveguide (7) which is installed on one of the surfaces or in the wall of a cylindrical test body (9) and deforms in its elastic domain, each optical waveguide locally describing a circular helix and carrying at least one transducer (11) which is sensitive to orientation and configured to perform a selective measurement of a first primary variable and of a second primary variable; - a computer (17) configured to selectively calculate the local variation of a longitudinal force δF, other than exerted by a hydrostatic pressure, applied to the test body and/or the local variation in hydrostatic pressure ΔP applied to the test body (9) according to the true relative variations of the measurements of the first and/or second primary variables.

IPC Classes  ?

• G01B 11/16 - Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge

Abstract

One aspect of the invention relates to a method for determining the level of a liquid in a container and/or a pipe (1), for example a tank, comprising at least a first and a second sensor (11) positioned respectively above and below the liquid level (5), wherein the liquid level is determined from the propagation speeds of a first and a second propagation mode and a propagation time of a guided elastic wave that propagates through the wall of the container or of the pipe according to the first mode above the liquid level (5) and according to the second mode below the liquid level (5).

IPC Classes  ?

• G01F 23/296 - Acoustic waves
• G01F 23/2962 - Measuring transit time of reflected waves

Abstract

The invention relates to a method for purifying a gas by radiolysis of the impurities contained in the gas, the method comprising a step of irradiating the gas with at least one electromagnetic and/or particulate radiation, the energy carried by at least one, preferably each, radiation particle being less than or equal to 300 keV.

IPC Classes  ?

• B01D 53/00 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols
• B01J 19/12 - Processes employing the direct application of electric or wave energy, or particle radiationApparatus therefor employing electromagnetic waves
• B01J 19/08 - Processes employing the direct application of electric or wave energy, or particle radiationApparatus therefor
• C10G 32/00 - Refining of hydrocarbon oils by electric or magnetic means, by irradiation, or by using microorganisms
• C10L 3/10 - Working-up natural gas or synthetic natural gas
• G21G 1/00 - Arrangements for converting chemical elements by electromagnetic radiation, corpuscular radiation, or particle bombardment, e.g. producing radioactive isotopes
• G21K 1/00 - Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
• G21K 5/02 - Irradiation devices having no beam-forming means