Abstract

A photodiode including a detection portion having a doped first region, a doped second region and an intermediate region; a dielectric layer; and a semiconductor peripheral portion. It also includes a ferroelectric peripheral portion located between and in contact with the intermediate layer and the dielectric layer, and located between the first region and the semiconductor peripheral portion and surrounding the first region in the main plane.

IPC Classes  ?

• H10F 30/223 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
• H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
• H10F 39/18 - Complementary metal-oxide-semiconductor [CMOS] image sensorsPhotodiode array image sensors
• H10F 71/00 - Manufacture or treatment of devices covered by this subclass

Abstract

The invention relates to a memory circuit comprising: - at least one dual memory structure comprising: a first resistive non-volatile memory cell having an associated first input/output node; a second resistive non-volatile memory cell having an associated second input/output node; a third input/output node common to the first memory cell and to the second memory cell; - a circuit for reading a multivalued datum stored in the dual memory structure, comprising: o a detection circuit for performing a comparison operation between the first resistance and the second resistance; wherein the detection circuit is configured to generate a comparison result signal and a completion indicator signal for the comparison operation; o a calculating circuit configured to determine the absolute value of the stored datum from a time period measured with respect to the switching moment of the completion indicator signal.

IPC Classes  ?

• G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
• G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or

Abstract

An electronic structure includes a substrate; an electronic component; and an interconnection film disposed between the substrate and the electronic component, electrically and mechanically connecting the electronic component to the substrate; the interconnection film including a first face, a second face opposite to the first face, an electrically conductive zone extending from the first face to the second face and an electrically insulating polymer material coating the electrically conductive zone, at least one of the first and second faces of the interconnection film being structured so as to form a dry adhesive film, said at least one of the first and second faces having a plurality of patterns, at least part of the patterns being formed by the electrically insulating polymer material.

IPC Classes  ?

• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

The present disclosure relates to a switching supply system including at least a pair of dual-bridge converters (DAB1, DAB2), wherein: first H-bridge switches of the converters are coupled, in parallel or series, to two terminals (12, 14) for applying a first voltage (Vin), second H-bridge switches of the converters being coupled, in parallel or series, to two terminals (16, 18) for supplying a second voltage (Vout), and the switches of the converters (DAB1, DAB2) are controlled in opposition from one converter to the other.

IPC Classes  ?

• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 1/00 - Details of apparatus for conversion
• H02M 1/12 - Arrangements for reducing harmonics from AC input or output
• H02M 1/44 - Circuits or arrangements for compensating for electromagnetic interference in converters or inverters

Abstract

The present disclosure relates to a circuit comprising a first memory element configured to store a first data value; a second memory element configured to store a weight matrix in association with a layer of a binary neural network; and a computing circuit configured to: a) receive the first data value and the k-th row of the weight matrix; b) receive a first control signal, indicating the nature of each of the first and second read functions, each associated with two-valued arithmetic; c) generate a first vector by applying the first read function to the k-th row of the weight matrix and a second vector by applying the second read function to the data; and d) generate a k-th component of a first output vector based on the first and second vectors.

IPC Classes  ?

• G06N 3/065 - Analogue means

Abstract

A device includes a magnetic tunnel junction; a conductive spacer with low spin-orbit coupling and high mean orbital moment diffusion length; and a conductive track able to generate an orbital moment current from a charge current and having a weak spin-orbit coupling.

IPC Classes  ?

• H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• H10N 50/01 - Manufacture or treatment
• H10N 50/10 - Magnetoresistive devices

Abstract

A decontamination coating and method for manufacturing the decontamination coating, wherein the decontamination coating includes a multilayer structure including a support, a trapping layer intended to be brought into contact with the toxic chemical compounds so as to trap them, and a holding film intended to maintain the shape of the support in the plane and in a direction transverse to the plane, during the formation of the trapping layer.

IPC Classes  ?

• A62D 3/33 - Processes for making harmful chemical substances harmless, or less harmful, by effecting a chemical change in the substances by reacting with chemical agents by chemically fixing the harmful substance, e.g. by chelation or complexation
• A62D 101/02 - Chemical warfare substances, e.g. cholinesterase inhibitors
• A62D 101/26 - Organic substances containing nitrogen or phosphorus
• B01J 20/20 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material comprising free carbonSolid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof comprising inorganic material comprising carbon obtained by carbonising processes
• B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
• B01J 20/32 - Impregnating or coating
• B32B 5/18 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer containing foamed or specifically porous material
• B32B 15/09 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyesters
• B32B 15/20 - Layered products essentially comprising metal comprising aluminium or copper
• B32B 27/36 - Layered products essentially comprising synthetic resin comprising polyesters

Abstract

One aspect of the invention relates to a pulse generator (4) for generating a current pulse on an output branch (46) upon receipt of a trigger command, comprising: • a first half-bridge (431, 432) and a second half-bridge (433, 434), the latter comprising bidirectional switches; • an inductor (45) connected between the two half-bridges; and • a controller configured, according to different configurations of the half-bridges, to charge the inductor (45) and discharge it into the output branch (46).

IPC Classes  ?

• H03K 3/53 - Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
• H03K 3/57 - Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
• H03K 17/06 - Modifications for ensuring a fully conducting state
• H03M 1/08 - Continuously compensating for, or preventing, undesired influence of physical parameters of noise
• H03K 17/16 - Modifications for eliminating interference voltages or currents
• H03K 17/66 - Switching arrangements for passing the current in either direction at willSwitching arrangements for reversing the current at will

Abstract

A method of preparing a structured substrate of interest including the following steps: providing a substrate of interest including a thin film, onto which a protective layer has been bonded by direct bonding, depositing a resin, and etching the thin film and a portion of the support substrate through openings in the resin, to form pads, bonding a temporary substrate to the substrate of interest, then separating them, whereby the protective layer is separated from the substrate of interest, the resin being removed prior to the bonding step or during the separation, the protective layer/thin film adhesion energy being lower than the temporary substrate/protective layer adhesion energy or than the resin/protective layer adhesion energy.

IPC Classes  ?

• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 21/3065 - Plasma etchingReactive-ion etching
• H01L 21/762 - Dielectric regions
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

A method of forming an integrated component, for example a capacitor or an ionic capacitor, including: forming a stacked structure on a substrate, the stacked structure having a bottom electrode, an intermediate layer including a layer of dielectric material or a layer of ionic conductor, and a top electrode, wherein forming the top and/or the bottom electrode comprises forming a liner layer of material; and forming a metallic layer on the liner layer, the metallic layer including a noble metal, and wherein the metallic layer is thicker than the liner layer.

IPC Classes  ?

• H10D 1/68 - Capacitors having no potential barriers
• H10D 1/00 - Resistors, capacitors or inductors

Abstract

An integrated electrical device that includes an energy storage component, the component having, above a support, a bottom electrode layer, an intermediate layer having a dielectric layer or an ionic conductor layer above the bottom electrode layer, and a top electrode layer above and on the intermediate layer, wherein the intermediate layer is in contact with the bottom electrode layer and with the top electrode layer in a central region, and the intermediate layer is are spaced apart from either the bottom electrode layer or the top electrode layer by a buffer layer in a peripheral region that surrounds the central region, the buffer layer including an insulating material and arranged on the bottom electrode layer or on the intermediate layer, the buffer layer having an opening that opens onto the bottom electrode layer or onto the intermediate layer so as to define the central region.

IPC Classes  ?

• H10D 1/68 - Capacitors having no potential barriers
• H10D 1/00 - Resistors, capacitors or inductors
• H10D 84/00 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Abstract

The invention relates to a method for manufacturing a functionalised optical fibre, the method comprising: – during a functionalisation phase (110): – unwinding (114) a non-functionalised optical fibre wound onto a first spool in order to cause it to travel past a femtosecond laser which, through a temporary protective wrapper, inscribes patterns in a non-functionalised waveguide in order to obtain a functionalised optical-fibre blank, – winding (114) the functionalised optical-fibre blank onto a second spool, – during a phase (130) of depositing a permanent protective wrapper: unwinding (134) the functionalised optical-fibre blank wound onto the second spool so as to cause it to pass successively: - through a solvent bath which completely dissolves the temporary protective wrapper in order to expose the functionalised waveguide, then - through a deposition station (138) where the permanent protective wrapper is applied to the exposed waveguide.

IPC Classes  ?

• G02B 6/02 - Optical fibres with cladding

Abstract

The present invention relates to molecules that have both thermally activated delayed fluorescence (TADF) and circularly polarized luminescence (CPL) properties. The invention also relates to the use of such molecules as a photocatalyst or as a dopant, in particular in the emitting layers of light-emitting diodes (OLEDs), and also to light-emitting devices or light-emitting diodes (OLEDs) comprising such compounds.

IPC Classes  ?

• C07D 491/147 - Ortho-condensed systems the condensed system containing one ring with oxygen as ring hetero atom and two rings with nitrogen as ring hetero atom
• C07D 498/22 - Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
• H10K 50/80 - Constructional details
• H10K 85/60 - Organic compounds having low molecular weight

Abstract

A thermal and mechanical management device for conducting heat from a hot source to a cold source in a gas insulated electrical switching gear comprising a heat pipe formed as a spring element and at least partially formed as an S-shaped spring element. The S-shaped spring element following a path comprising a first arcuate portion, a second arcuate portion opposing the first portion, and being framed by a frame bordered by both the hot source and the cold source. The arc measure of each of the first and second arcuate portions being at least 180 degrees.

IPC Classes  ?

• F28D 15/02 - Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls in which the medium condenses and evaporates, e.g. heat-pipes
• H02B 1/56 - CoolingVentilation
• H02G 5/10 - Cooling

Abstract

A system for controlling biofouling by microorganisms, adapted to cooperate with a measurement device adapted to be immersed in a liquid, the measurement device including a fouling surface able to allow measurement, the system being configured to cover the fouling surface and including a membrane and an actuator to vibrate the membrane.

IPC Classes  ?

• G01J 1/02 - Photometry, e.g. photographic exposure meter Details
• B08B 7/02 - Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
• B08B 13/00 - Accessories or details of general applicability for machines or apparatus for cleaning
• B08B 17/02 - Preventing deposition of fouling or of dust

Abstract

According to one aspect, the invention relates to a portable device (1) for detecting a laser beam, the portable detection device comprising: - a support portion (10) comprising: a1) a device for autonomously powering the portable detection device, and b1) a holding element (12) for holding the portable detection device, - a detection portion (20) for detecting the laser beam, comprising: a2) an optical system (22) suitable for forming an image comprising the laser beam, the laser beam having a wavelength of less than 1.6 micrometres, b2) at least one sensor (24) suitable for detecting the laser beam on the image formed by the optical system and for providing an output signal associated with the detected laser beam, and - a computer configured to digitally process the output signal generated by the sensor so as to generate a digital image of the detected laser beam.

IPC Classes  ?

• G01J 1/02 - Photometry, e.g. photographic exposure meter Details
• G01J 1/04 - Optical or mechanical part
• G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors

Abstract

An electrically insulated heat and mechanical link (EIHML) for use in a fluid-filled environment of a high voltage equipment and for transferring heat from a hot source at a high electrical potential to a cold source at earth potential comprising an electrically insulating assembly and a thermal and mechanical management device, the electrically insulating assembly being attached to the thermal and mechanical management device. The electrically insulating assembly comprising a first insert configured for attachment to the hot source, a second insert, and a thermally conductive high voltage insulator coupling the first insert to the second insert. The thermal and mechanical management device being configured for attachment to the cold source at an opposite end to the second insert and having a stiffness in normal operational conditions less than that of the electrically insulating assembly.

IPC Classes  ?

• H01B 17/54 - Insulators or insulating bodies characterised by their form having heating or cooling devices
• H02G 5/10 - Cooling
• H01H 9/52 - Cooling of switch parts

Abstract

A device for capturing a biological object includes a first fluid circuit. The first fluid circuit includes: a first fluid port and a second fluid port; a main channel extending between the first fluid port and the second fluid port, including a first branch into which the first fluid port opens, a central branch forming an extension of the first branch via a first junction branch, and a second branch forming an extension of the central branch via a second junction branch and opening at the second fluid outlet; and a first hydrodynamic trap and a second hydrodynamic trap, each hydrodynamic trap taking the form of a branch from the main channel and including a housing sized to accept the biological object and a restriction forming an extension of the housing.

IPC Classes  ?

• B01L 3/00 - Containers or dishes for laboratory use, e.g. laboratory glasswareDroppers

Abstract

A resistive memory includes at least one first layer, including a titanium-based material, the titanium-based material being conductive; at least one second layer, extending over the at least one first layer, including a first phase change material, the first phase change material being able to be doped with titanium; a first electrode and a second electrode, the first and second layers separating the first electrode from the second electrode by electrically connecting in series the first electrode to the second electrode, the first electrode being in contact with the at least one first layer or, when there are several first layers, in contact with one of the first layers.

IPC Classes  ?

• H10B 63/10 - Phase change RAM [PCRAM, PRAM] devices
• G11C 13/00 - Digital stores characterised by the use of storage elements not covered by groups , , or
• H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
• H10N 70/20 - Multistable switching devices, e.g. memristors

Abstract

An actuator includes a frame, a screw/nut assembly including a nut which engages with a screw extending along a longitudinal axis, a motor arranged to rotate the screw and bring about a linear movement of the nut, the actuator further includes a single pair of return mechanisms having a first return mechanism and a second return mechanism which are rotatably mounted on the frame, the first return mechanism being connected to an output of the actuator, a first transmission member for transmitting a pulling force connected to the nut by its first end and its second end, which transmission member engages with the first return mechanism and the second return mechanism, and an anti-rotation device for preventing the nut from rotating relative to the screw.

IPC Classes  ?

• F16H 25/20 - Screw mechanisms
• F16H 19/06 - Gearings comprising essentially only toothed gears or friction members and not capable of conveying indefinitely-continuing rotary motion for interconverting rotary motion and reciprocating motion comprising an endless flexible member

Abstract

The present description concerns a manufacturing method comprising the exposure of a resist layer to a radiation by an optical lithography system comprising a mask, the mask comprising an array of pads opaque to radiation, spaced apart by a pitch, and distributed in at least two regions, the area ratios of the two regions being different, the pitch being equal, to within 10%, to the minimum resolution dimension of the Rayleigh criterion, and the development of the layer obtaining two pillars of different heights at the locations of the images of the two regions and of protrusions of nanometric heights at the top of each pillar at the locations of the images of the pillars.

IPC Classes  ?

• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
• B82Y 40/00 - Manufacture or treatment of nanostructures

Abstract

An optoelectronic device (100) configured to convert an electrical digital information signal into a light digital information signal, comprising: - a semiconductor stack (120) including a first doped semiconductor portion (122) and a second doped semiconductor portion (124) forming together a PN junction; - a first electrode coupled to the first doped semiconductor portion, a second electrode coupled to the second doped semiconductor portion, and an electrostatic gate (140) arranged against sidewalls of the semiconductor stack; - a first driver circuit (160) comprising an input (162) configured to receive a first part of the electrical digital information signal and an output (164) coupled to the electrostatic gate and onto which, for each bit of the first part of the electrical digital information signal, a voltage is supplied, the value of which depends at least in part on that of said bit.

IPC Classes  ?

• H04B 10/116 - Visible light communication
• H04B 10/50 - Transmitters
• H10H 20/831 - Electrodes characterised by their shape
• H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
• H10H 20/84 - Coatings, e.g. passivation layers or antireflective coatings

Abstract

The invention relates to an electromagnetic radiation detector comprising an absorber which is configured to absorb the electromagnetic radiation, a MOSFET-type transistor which is thermally coupled to the absorber, and a control circuit. The transistor comprises a source and a drain which are doped with a first conductivity type, a channel, and a gate which is electrically insulated from the channel by a gate dielectric layer of the transistor. The control circuit is electrically connected to the source, drain, and gate, and is configured to apply an electrical potential difference between the gate and the source that is less than or equal to a threshold voltage of the transistor. The gate is made of silicon doped with a second conductivity type which is opposite to the first conductivity type and has a majority charge carrier concentration of less than or equal to 1x1019cm-3. The gate dielectric layer has a thickness of less than or equal to 50 nm.

IPC Classes  ?

• G01J 5/02 - Constructional details
• G01J 5/04 - Casings
• G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

The invention pertains to a process for manufacturing a fluoropolymer hybrid organic/inorganic composite and films and membranes thereof and to uses of said fluoropolymer hybrid organic/inorganic composite and films and membranes thereof in various applications.

IPC Classes  ?

• C08J 5/18 - Manufacture of films or sheets
• C08J 5/22 - Films, membranes or diaphragms
• H01M 50/403 - Manufacturing processes of separators, membranes or diaphragms
• H01M 50/446 - Composite material consisting of a mixture of organic and inorganic materials
• H01M 10/052 - Li-accumulators
• C08F 214/22 - Vinylidene fluoride

Abstract

cyclecycle), the phases being controlled by switching angles; a first regulating module (56) configured to correct a measured output voltage or current value relative to a setpoint value, and providing a corrected output current estimate; a calculation module (60) using a mathematical model for calculating the switching angles as a function of the corrected current estimate, the measured value of the output voltage, an input voltage value, and an estimator (72) configured to estimate the conversion cycle frequency.

IPC Classes  ?

• H02M 1/00 - Details of apparatus for conversion
• H02M 3/335 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
• H02M 3/00 - Conversion of DC power input into DC power output

Abstract

The invention pertains to a dry process for manufacturing a fluoropolymer hybrid organic/inorganic composite and films and membranes thereof and to uses of said fluoropolymer hybrid organic/inorganic composite and films and membranes thereof in various applications.

IPC Classes  ?

• C08J 5/18 - Manufacture of films or sheets
• C08J 5/22 - Films, membranes or diaphragms
• H01M 50/403 - Manufacturing processes of separators, membranes or diaphragms
• H01M 50/446 - Composite material consisting of a mixture of organic and inorganic materials
• H01M 10/052 - Li-accumulators
• C08F 214/22 - Vinylidene fluoride

Abstract

The present invention concerns a novel mutated bacterium tolerant to elevated concentrations of one or more amine compound(s), the mutated bacterium being derived from a reference bacterium by insertion of one or more mutations in its genome, wherein the bacterium is a diderm bacterium and the mutation(s) is(are) present in one or more types of genes or intergenic regions. The invention also relates to in vitro methods using or to in vitro uses of the mutated bacterium of the invention in relation of amine compounds production or transformation.

IPC Classes  ?

• C12N 1/20 - BacteriaCulture media therefor
• C12N 9/02 - Oxidoreductases (1.), e.g. luciferase
• C12N 9/06 - Oxidoreductases (1.), e.g. luciferase acting on nitrogen containing compounds as donors (1.4, 1.5, 1.7)
• C12N 9/12 - Transferases (2.) transferring phosphorus containing groups, e.g. kinases (2.7)
• C12N 9/16 - Hydrolases (3.) acting on ester bonds (3.1)
• C12N 9/88 - Lyases (4.)
• C12N 9/90 - Isomerases (5.)
• C12N 9/92 - Glucose isomerase
• C12P 13/00 - Preparation of nitrogen-containing organic compounds
• C12P 17/18 - Preparation of heterocyclic carbon compounds with only O, N, S, Se, or Te as ring hetero atoms containing at least two hetero rings condensed among themselves or condensed with a common carbocyclic ring system, e.g. rifamycin

Abstract

1212jc122) configured to generate and/or detect, in correspondence with the ferromagnetic element of said transducer, an electromagnetic mode (MEL) suitable for exciting or being able to be generated by said magnetic oscillation mode of the ferromagnetic element.

IPC Classes  ?

• G01N 29/24 - Probes
• H01F 1/00 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties

Abstract

A method for training a model for discovering objects in an input image sequence, the model includes an encoder; an attention module configured to transform the first feature vector into a plurality of feature vectors, called slots; a decoder; the learning of the attention maps being monitored by a set of binary masks for discovering mobile objects produced by an external source, called pseudo-labels; the pseudo-labels being filtered by means of the following steps of: determining an attention map of the foreground of the image; computing a confidence score from the average of the values of the attention map of the foreground of the image at the positions of each mobile object present in a pseudo-label; filtering the mobile objects of the pseudo-labels for which the confidence score is below a predefined threshold.

IPC Classes  ?

• G06V 10/774 - Generating sets of training patternsBootstrap methods, e.g. bagging or boosting
• G06V 10/74 - Image or video pattern matchingProximity measures in feature spaces
• G06V 10/776 - ValidationPerformance evaluation
• G06V 10/778 - Active pattern-learning, e.g. online learning of image or video features
• G06V 20/40 - ScenesScene-specific elements in video content

Abstract

The invention relates to a sensor (1) for simultaneously measuring a pressure and a velocity, comprising: - a crystal (2) comprising a face covered with a reflective layer (3); - a pumping laser (4) configured to emit a pumping beam (F1) towards the crystal and having a wavelength comprised in an absorption band of the crystal so that the illumination of the crystal by the pumping beam excites a portion of the electrons of the crystal; - a spectrometer (6) for receiving a luminescence signal (S1) resulting from the de-excitation of the electrons of the crystal, and for measuring the variation over time in the wavelength of the spectral lines of the luminescence signal; - an interferometry system (12) configured to measure the variations in velocity of the reflective layer over time by means of laser Doppler velocimetry.

IPC Classes  ?

• G01F 1/7086 - Measuring the time taken to traverse a fixed distance using optical detecting arrangements
• G01F 1/712 - Measuring the time taken to traverse a fixed distance using auto-correlation or cross-correlation detection means
• G01L 11/02 - Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group or by optical means

Abstract

The invention concerns an immunomodulatory complex comprising a Tat polypeptide of SEQ ID NO: 1 or a variant thereof which binds heparan sulfate, linked to a ligand of an antigen-presenting cell, NK or NKT cell surface receptor other than a sulfated sugar of the glycosaminoglycan family, with the proviso that the immunomodulatory complex lacks the peptide Tat 49-57 (RKKRRQRRR), and its use in immunotherapy of cancer, infectious, immunoinflammatory or autoimmune diseases.

IPC Classes  ?

• A61K 38/16 - Peptides having more than 20 amino acidsGastrinsSomatostatinsMelanotropinsDerivatives thereof
• C07K 14/16 - HIV-1
• C07K 14/31 - Peptides having more than 20 amino acidsGastrinsSomatostatinsMelanotropinsDerivatives thereof from bacteria from Micrococcaceae (F) from Staphylococcus (G)
• C07K 14/315 - Peptides having more than 20 amino acidsGastrinsSomatostatinsMelanotropinsDerivatives thereof from bacteria from Streptococcus (G), e.g. Enterococci

Abstract

A method for diagnosing a cerebral creatine deficiency syndrome, the method comprising the steps of a) measuring an amount of at least one protein selected from BDNF, KIF1A, MeCP2, PLCB1, and a combination thereof, in an isolated biological sample, and b) comparing the measured amount obtained at step a) with a predetermined reference amount of said protein, where a difference between the measured amount and the predetermined reference amount is indicative of a cerebral creatine deficiency syndrome in said individual. At least one protein selected from BDNF, KIF1A, MeCP2, PLCB1, and a combination thereof, as a biomarker for use in a method for diagnosing a cerebral creatine deficiency syndrome.

IPC Classes  ?

• G01N 33/68 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving proteins, peptides or amino acids

Abstract

The invention relates to a secure communication method between a transmitting peer (3) and a receiving peer (4) and involving an external actor (2) having a hierarchical deterministic wallet (1) including a pair of master keys kmaster and Kmaster. The external actor (2) configures (104) the receiving peer (4) by saving an IBE decryption key aDKey[Idj,kmaster] in its electronic memory. The external actor (2) configures (105) the transmitting peer (3) by saving an index j of the receiving peer and the master public key Kmaster in its electronic memory. The transmitting peer (3) deterministically determines (106) an identifier Idj of the receiving peer, then calculates (107) an IBE encryption key aCKey[Idj,Kmaster]. The transmitting peer (3) encrypts (108) a message (60) using the key aCKey[Idj, Kmaster] and sends (109) the encrypted message (61) to the receiving peer (4). The receiving peer (4) deciphers (110) the message using the key aDKey[Idj, kmaster].

IPC Classes  ?

• H04L 9/08 - Key distribution
• G06Q 20/38 - Payment protocolsDetails thereof
• G06Q 20/40 - Authorisation, e.g. identification of payer or payee, verification of customer or shop credentialsReview and approval of payers, e.g. check of credit lines or negative lists
• H04L 9/00 - Arrangements for secret or secure communicationsNetwork security protocols
• H04L 9/32 - Arrangements for secret or secure communicationsNetwork security protocols including means for verifying the identity or authority of a user of the system

Abstract

The invention relates to a method for manufacturing a cobalt silicide CoSi2 layer including the steps of: Providing a substrate comprising a silicon layer; Depositing a cobalt Co layer onto the substrate; Annealing the stack by a nanosecond laser comprising at least one laser pulse with a duration between 50 nanoseconds and 20 microseconds and an energy density selected so as to form the cobalt silicide CoSi2 layer in the solid state.

IPC Classes  ?

• C01B 33/06 - Metal silicides
• C30B 23/02 - Epitaxial-layer growth
• C30B 29/10 - Inorganic compounds or compositions

Abstract

A substrate incouding a support of interest comprising a support layer and a buried oxide layer, a porous GaN or InGaN layer, a barrier layer, and an additional InGaN layer; and an electroluminescent diode including the substrate.

IPC Classes  ?

• H10H 20/815 - Bodies having stress relaxation structures, e.g. buffer layers
• H10H 20/01 - Manufacture or treatment
• H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
• H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Abstract

One aspect of the invention relates to a method for manufacturing a light-emitting display device including a step of forming a plurality of pixels, each pixel comprising a lower electrode, a support element supporting the lower electrode, an upper electrode and an active element arranged between the lower and upper electrodes, which comprises forming, on a surface of a substrate, support elements and lower electrodes of the pixels, each support element having a height and at least one dimension, referred to as differentiation dimension, in a plane parallel to the plane of the substrate, each differentiation dimension being measured in a differentiation direction and being strictly less than the corresponding dimension of the lower electrode that it supports, the height of the support element being strictly greater than the sum of the thickness of the active element and the thickness of the upper electrode.

IPC Classes  ?

• H10K 59/122 - Pixel-defining structures or layers, e.g. banks
• H10K 59/124 - Insulating layers formed between TFT elements and OLED elements
• H10K 59/80 - Constructional details
• H10K 59/35 - Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Abstract

The invention concerns an immunomodulatory fusion protein comprising a Fc fragment of immunoglobulin which binds Fc receptor expressed on the surface of APC, NK or NKT cells, and a Tat polypeptide which is a polypeptide of SEQ ID NO: 1 or a variant which binds heparan sulfate, providing that the fusion protein does not comprise the peptide Tat 49-57, and its use in immunotherapy of cancer, infectious, immunoinflammatory or autoimmune diseases.

IPC Classes  ?

• A61K 38/16 - Peptides having more than 20 amino acidsGastrinsSomatostatinsMelanotropinsDerivatives thereof
• C07K 14/16 - HIV-1

Abstract

A flexible electrical conductor including an assembly comprising a flexible conductive core made of a first metal material and a sheath covering the conductive core and made of a second metal material having an electrical resistivity higher than the electrical resistivity of the first metal material; a first connection strip formed at least in part by the second metal material and connected to a first end of the assembly, wherein, at the first end of the assembly, the sheath and the first connection strip are bonded by TIG welding, and the conductive core and the first connection strip are bonded by fillet-brazing or soldering.

IPC Classes  ?

• H01B 7/04 - Flexible cables, conductors, or cords, e.g. trailing cables
• H01B 1/02 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of metals or alloys
• H01B 7/00 - Insulated conductors or cables characterised by their form
• H01B 7/20 - Metal tubes, e.g. lead sheaths
• H01B 13/22 - SheathingArmouringScreeningApplying other protective layers
• H01M 8/02 - Fuel cellsManufacture thereof Details

Abstract

A method for integrating a sensor into a metal part including creating, by additive printing, of a first portion of the part, including a volume for housing a sensor. The volume has a width greater than that of the sensor. The method also includes depositing the sensor in said housing volume and creating, by additive printing, a second portion of the part covering the sensor and forming a molten puddle in the housing volume, on either side of the sensor.

IPC Classes  ?

• B22F 7/08 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
• B22F 10/28 - Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
• B33Y 10/00 - Processes of additive manufacturing
• B33Y 80/00 - Products made by additive manufacturing
• G01D 5/353 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre

Abstract

A MEMS and/or NEMS measuring system includes: a resonant assembly including a plurality of N resonators indexed i, at least one resonant mechanical element coupled to each resonator, and at least one waveguide to which the optical resonators are coupled, an emission device, an injection device, each resonator of the resonant assembly further being configured to be excited at a mechanical excitation frequency and to modulate the light beam associated with the first excitation frequency, a resonant mechanical element being configured to be excited at a mechanical excitation frequency and to modify an optical transmission or reflection in the vicinity of the optical resonance of the associated resonator, the modification being dependent on a physical quantity to be measured, at least one detector, a demodulation device including a plurality of so-called LIA demodulation modules employing synchronous detection.

IPC Classes  ?

• B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
• G01D 5/30 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with deflection of beams of light, e.g. for direct optical indication the beams of light being detected by photocells
• G01D 5/353 - Mechanical means for transferring the output of a sensing memberMeans for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for convertingTransducers not specially adapted for a specific variable using optical means, i.e. using infrared, visible or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre

Abstract

1234523231677 represent independently a hydrogen or a methyl; - wherein n and m are integers, independently selected among 1 to 3; and - wherein p is an integer selected among 1 and 2.

IPC Classes  ?

• C07D 221/20 - Spiro-condensed ring systems
• A61P 13/12 - Drugs for disorders of the urinary system of the kidneys
• A61P 25/00 - Drugs for disorders of the nervous system
• A61P 35/00 - Antineoplastic agents
• A61K 31/435 - Heterocyclic compounds having nitrogen as a ring hetero atom, e.g. guanethidine or rifamycins having six-membered rings with one nitrogen as the only ring hetero atom

Abstract

143(1-y-z)3y3z2k2(1-k)3(1-x)3x3x, A being an alkali, an ammonium cation or a cation derived from a water-soluble hydroxide salt or a mixture thereof, x being a number ranging from 0 to 1.

IPC Classes  ?

• B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
• B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
• B01D 69/10 - Supported membranesMembrane supports
• B01D 71/02 - Inorganic material

Abstract

The present description relates to an electronic device (17) that is reconfigurable by programming in order to implement an encoder of a sigma-delta converter based on a generic encoder model with k identical cells Cellk (Cell1, Cell2, Cell3), where k is an integer index ranging from 1 to K and K is an integer between 1 and Kmax, where Kmax is an integer greater than or equal to 1. Each cell Cellk comprises a corresponding weight vector Wk. The device comprises a programmable memory configured to be programmed on the basis of the values of the weights of the K weight vectors Wk. The device further comprises a programmable control circuit (CTRL) configured to be programmed on the basis of the values of the weights of the K weight vectors Wk in order to control summations (SUM1, SUM2, SUM3) and quantisations (Quanti, Quanti, Quant3) in the reconfigurable device so as to implement, in each conversion cycle of an n-cycle conversion, where n is the oversampling rate, the calculations of the vectors Qk[n] as output from the cells Cellk of the encoder.

IPC Classes  ?

• H03M 3/00 - Conversion of analogue values to or from differential modulation
• G06N 3/044 - Recurrent networks, e.g. Hopfield networks
• G06N 3/0455 - Auto-encoder networksEncoder-decoder networks
• G06N 3/048 - Activation functions
• G06N 3/09 - Supervised learning

Abstract

Disclosed is a composition comprising 70 to 95 parts by mass of an epoxy resin with a viscosity of less than or equal to 20 Pa·s, for example between 1 and 20, or between 1 and 10, at a temperature of between 20° C. and 25° C., and 5 to 30 parts by mass of a hardener dispersed in the resin, per 100 parts by mass of resin present in the composition, wherein the hardener is an ionic liquid containing a phosphonium cation of formula P(R1R2R3R4)+ wherein R1, R2, R3 and R4, which may be identical or different, represent a hydrogen atom, an alkyl radical having 1 to 18 carbon atoms, an aryl radical having 6 to 20 carbon atoms, said alkyl and aryl radicals being optionally substituted, and an acetate anion of formula (R5CO2)− wherein R5 represents a hydrogen atom, an alkyl radical having 1 to 18 carbon atoms, an aryl radical having 6 to 20 carbon atoms, said alkyl and aryl radicals being optionally substituted, or a phosphinate anion of formula [[(CH3)3CCH2CH(CH3)CH2]2P(O)O]−. Further disclosed is the use of a composition for the manufacture of a hydrogen vessel, in particular a vessel operating under pressure, of types II, III, IV and V, comprising a composite material, for the on-board storage of gaseous hydrogen.

IPC Classes  ?

• C08G 59/40 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the curing agents used
• B29B 11/16 - Making preforms characterised by structure or composition comprising fillers or reinforcements
• B29K 63/00 - Use of epoxy resins as moulding material
• B29K 105/06 - Condition, form or state of moulded material containing reinforcements, fillers or inserts
• C08J 5/24 - Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
• F17C 1/16 - Pressure vessels, e.g. gas cylinder, gas tank, replaceable cartridge constructed of plastics materials

Abstract

The present description concerns a method for designing a sigma-delta type converter comprising a step of supervised deep learning applied to a converter model. The converter model comprises at least one recurrent encoder and at least one recurrent decoder. Each recurrent encoder is based on a generic model comprising a succession of K identical generic cells Cellk, with K an integer parameter greater than or equal to 1 and k an integer index ranging from 1 to K. The sigma-delta converter is obtained by manufacturing an electronic circuit corresponding to the model obtained after the training.

IPC Classes  ?

• H03M 3/00 - Conversion of analogue values to or from differential modulation

Abstract

The invention relates to a composite structure having a front face and a rear face extending parallel to a main plane, which structure comprises: - a useful layer of single-crystal silicon carbide, a free face of which constitutes the front face, which layer has a first concentration of N-type dopants; - a carrier substrate made of polycrystalline silicon carbide, a free face of which constitutes the rear face, which substrate has a second concentration of N-type dopants, the second concentration being higher than the first concentration; - an intermediate region extending along the main plane and including an interface zone between an assembled face of the useful layer and an assembled face of the carrier substrate; the composite structure being characterised in that the intermediate region comprises inclusions of single-crystal silicon carbide in direct contact with the useful layer and extending, in a direction normal to the main plane, between grains of the carrier substrate, the inclusions having a third concentration of N-type dopants which is between the first concentration and the second concentration. The invention also relates to a method for producing such a composite structure.

IPC Classes  ?

• H01L 21/18 - Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Abstract

A method for perceiving physical bodies in an environment, including the following steps: a) controlling a sensor in an acquisition sequence, with the sensor having a detection region that can be oriented in order to acquire a plurality of distance measurements of the physical bodies; b) determining, based on each of the distance measurements, a probability of occupancy of a set of cells of an occupancy grid by a physical body; and c) constructing a consolidated occupancy grid by Bayesian fusion of the probabilities of occupancy estimated during step b); wherein the detection region of the sensor has a variable angular width and in that the method also comprises the following steps: d) identifying, based on the occupancy grid, at least one region of interest of the environment; and e) determining, based on the one or more regions of interest identified during step d), one of the acquisition sequences defining, for each distance measurement, at least the orientation and the angular width of the detection region of the sensor. A system for implementing such a method is also provided.

IPC Classes  ?

• G01S 7/41 - Details of systems according to groups , , of systems according to group using analysis of echo signal for target characterisationTarget signatureTarget cross-section
• G01S 7/48 - Details of systems according to groups , , of systems according to group
• G01S 7/539 - Details of systems according to groups , , of systems according to group using analysis of echo signal for target characterisationTarget signatureTarget cross-section

Abstract

The present invention relates to a force measuring device (10) intended to be subjected to compressive forces, comprising a substrate (100) on which is arranged at least one sensor comprising an organic piezoelectric film (120) arranged between a first electrode (110) and a second electrode (130), the device (10) further comprising an adaptable layer (150) made of a material having a Young's modulus greater than or less than the Young's modulus of the organic piezoelectric film (120).

IPC Classes  ?

• G01L 1/16 - Measuring force or stress, in general using properties of piezoelectric devices
• H04R 17/00 - Piezoelectric transducersElectrostrictive transducers
• H10N 30/50 - Piezoelectric or electrostrictive devices having a stacked or multilayer structure
• H10N 30/85 - Piezoelectric or electrostrictive active materials
• H10N 30/857 - Macromolecular compositions
• H10N 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups

Abstract

A device for evaluating a dynamic resistance in a conducting state of a GaN-based transistor. The device including a test circuit provided with a circuit, the GaN-based transistor, forming an arm of the circuit, the device being provided with a stage for controlling the switch elements of the circuit to alternately set the switch elements of the circuit in a first configuration and then in a second configuration, the control stage being configured to trigger a connection of a drain-source voltage measuring stage to the GaN-based transistor after the circuit is set in the first configuration, and to trigger a disconnection of the drain-source voltage measuring stage from the GaN-based transistor before the circuit is set in the second configuration.

IPC Classes  ?

• G01R 31/26 - Testing of individual semiconductor devices
• G01R 1/20 - Modifications of basic electric elements for use in electric measuring instrumentsStructural combinations of such elements with such instruments
• G01R 27/08 - Measuring resistance by measuring both voltage and current

Abstract

A method of manufacturing optoelectronic devices, including the following successive steps: a) forming, by epitaxial growth on a growth substrate, an active diode stack; b) transferring, onto a first transfer substrate, the active diode stack; c) removing the growth substrate; d) forming, by cutting of the first transfer substrate and of the active diode stack, a plurality of dies; and e) transferring, onto a second transfer substrate, the dies, each comprising a portion of the active diode stack.

IPC Classes  ?

• H10H 20/01 - Manufacture or treatment
• H10H 29/03 - Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions

Abstract

The present disclosure relates to lithium nickel phosphate ternary glasses and to the method to obtain them. The disclosure also relates to the preparation and use of lithium nickel phosphate ternary glasses as active materials of positive electrodes, in particular of metal-ion accumulators, as well as the active materials and electrodes.

IPC Classes  ?

• H01M 4/58 - Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFySelection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates
• C03C 3/23 - Silica-free oxide glass compositions containing halogen and at least one oxide, e.g. oxide of boron
• C03C 4/14 - Compositions for glass with special properties for electro-conductive glass
• C03C 12/00 - Powdered glassBead compositions
• H01M 4/02 - Electrodes composed of, or comprising, active material
• H01M 4/04 - Processes of manufacture in general
• H01M 4/1397 - Processes of manufacture of electrodes based on inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy
• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers

Abstract

A structure for cooling a component of a quantum device by circulating a given current between a first contact element with the component and a second contact element with the component, the first contact element comprising at least one given superconducting metal material, in particular at a given temperature less than 2K, and being in contact by a first end with a first semiconductor portion of said component so as to form with the first semiconductor portion at least one cooling tunnel junction.

IPC Classes  ?

• H10D 48/00 - Individual devices not covered by groups
• H01L 23/34 - Arrangements for cooling, heating, ventilating or temperature compensation
• H10N 60/80 - Constructional details

Abstract

The present invention relates to a reconfigurable electronic circuit (10), the electronic circuit (10) comprising a stack (12) of layers, the stack (12) of layers including: - a substrate (14); - a first layer (16), the first layer (16) being made of a first material, the first material being a ferroelectric material; and - a second layer (20), the second layer (20) being made of a second material, the second material being an oxide material that can be reduced by applying an electric field, the first layer (16) being positioned between the substrate (14) and the second layer (20).

IPC Classes  ?

• H10N 70/20 - Multistable switching devices, e.g. memristors

Goods & Services

Two-photon absorption sensors and detectors; Single-photon sensors, meters or detectors; Avalanche photodiode (APD) sensors; Sensors, detectors and monitoring equipment; LIDAR sensors; Laser sensors; Sensors enabling optical fibre communications, telecommunications, data communications and free-space optical communications; Transistors [electronic]; Electrical and electronic components; Active coolers for electronic components; Electronic chips; Optical apparatus and instruments, enhancers and correctors; Infrared sensors; Receivers and transimpedance amplifiers; Photodiodes; Semi-conductors; Photo electron spectroscopy analyzers [not for medical purposes]; Distance and dimension measuring equipment. Custom assembly of electronic components in the field of sensors, detectors and surveillance equipment. Engineering services; Design services; Research and development services; all the foregoing In the field of sensors, detectors and surveillance equipment.

Abstract

A method for retrofitting a nuclear power plant which include dismantling and removing all the components of the primary circuit apart from the LWR reactor vessel, which is essentially emptied of all material and neutralized, subsequently replacing a part of these components with subassemblies that are each made up of an integrated SMR reactor and a mixed concrete/metal structure, which mixed concrete/metal structure is also used as a reactor pit for the SMR reactor, which reactor pit is advantageously filled with water, anchoring the SMR to the inside of the reactor building and advantageously contributing to the third confinement barrier while ensuring minimal disruption to the infrastructure of the reactor building.

IPC Classes  ?

• G21D 1/00 - Details of nuclear power plant
• G21C 1/08 - Heterogeneous reactors, i.e. in which fuel and moderator are separated moderator being highly pressurised, e.g. boiling-water reactor, integral-superheat reactor, pressurised-water reactor
• G21C 1/32 - Integral reactors, i.e. reactors wherein parts functionally associated with the reactor but not essential to the reaction, e.g. heat exchangers, are disposed inside the enclosure with the core
• G21C 13/067 - Sealing-plugs for tubes, e.g. standpipesLocking devices for plugs
• G21C 21/00 - Apparatus or processes specially adapted to the manufacture of reactors or parts thereof
• G21F 9/00 - Treating radioactively contaminated materialDecontamination arrangements therefor

Abstract

A method of making of an optical device provided with a nano-structured or micro-structured component assembled on one end of an optical fibre includes providing a carrier based on a material photosensitive and transformable into a vitreous material, and making on a first end of the carrier, by two-photon photopolymerization, a micro-structured or nano-structured component, based on a material photosensitive and transformable into a vitreous material. The method also includes performing one or more heat treatment(s) so as to transform the material of the carrier and the material of the micro- or nano-structured component into a vitreous material and, then, assembling and securing a region of a second end of the carrier opposite to the first end with an area of an end of the optical fibre, by localised fusion of the region and the area, respectively of the carrier and the optical fibre.

IPC Classes  ?

• B29D 11/00 - Producing optical elements, e.g. lenses or prisms
• B29K 509/00 - Use of inorganic materials not provided for in groups , as filler

Abstract

An image acquisition device provided with a set of depth pixels, each depth pixel comprising a read circuit associated with a photodetector (PD), the read circuit having a switching circuit (120) configured to: adopt a first configuration so as to couple a first electrode (101a) of an integration capacitor (Ca) with a first read node (NL1) and a second electrode (102a) of the integration capacitor (Ca) with a detection node (ND), then, adopt a second configuration so as to couple the first electrode (101a) of the integration capacitor (Ca) with the detection node (ND) and the second electrode (102a) of the integration capacitor (CINT1) with the read node (NL).

IPC Classes  ?

• H04N 25/771 - Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
• G01B 11/22 - Measuring arrangements characterised by the use of optical techniques for measuring depth
• G01S 7/4913 - Circuits for detection, sampling, integration or read-out
• G01S 7/4915 - Time delay measurement, e.g. operational details for pixel componentsPhase measurement
• G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
• H04N 25/53 - Control of the integration time
• H04N 25/705 - Pixels for depth measurement, e.g. RGBZ

Abstract

The invention relates to a very-high-temperature heat pump comprising: - an open fluidic circuit comprising a circulating fluid, the circulating fluid being air, the circuit comprising: - an air inlet and outlet; - a thermal energy recovery module arranged on the fluidic circuit and configured to transmit thermal energy to the fluid circulating in the fluidic circuit; - a turbomachine comprising a compressor and a turbine arranged on the same axis; and - a heat exchanger that transfers heat from the circulating fluid of the heat pump to a source to be heated, and the circuit fluidly connecting the air inlet to the thermal energy recovery module, the thermal energy recovery module to the compressor of the turbomachine, the compressor of the turbomachine to the heat exchanger, the heat exchanger to the turbine of the turbomachine and the turbine of the turbomachine to the air outlet.

IPC Classes  ?

• F25B 9/00 - Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
• F25B 19/00 - Machines, plants or systems, using evaporation of a refrigerant but without recovery of the vapour

Abstract

The use of hydronium ion-conducting amyloid fibers or of wires comprising a plurality of hydronium ion-conducting amyloid fibers for generating electrical energy from a humid surrounding atmosphere. The invention also relates to a device comprising such fibers or wires.

IPC Classes  ?

• H02N 11/00 - Generators or motors not provided for elsewhereAlleged perpetua mobilia obtained by electric or magnetic means

Abstract

A method for forming a layer based upon a dielectric material on a layer based upon an etched III-V material includes providing at least one III-V layer base upon a III-V material, preferably III-N, having a front face. The method also includes etching at least one part of the III-V layer from the front face, so as to expose an etched surface of the III-V layer; exposing at least the etched surface to a plasma treatment of O2 or of N2, this step being carried out at a temperature Ttreatment with Ttreatment<100° C., and depositing a layer based upon a dielectric material at least on the etched surface.

IPC Classes  ?

• H10H 20/01 - Manufacture or treatment
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

Probenecid or a pharmaceutical acceptable salt thereof for use in the treatment of a neurological disorder in a subject in need thereof, wherein administration of probenecid or a pharmaceutical acceptable salt thereof controls clinical or electrographic seizures in the subject. Preferably, the neurological disorder is an epileptic disease, disorder or condition.

IPC Classes  ?

• A61K 31/195 - Carboxylic acids, e.g. valproic acid having an amino group
• A61K 9/00 - Medicinal preparations characterised by special physical form
• A61P 25/08 - AntiepilepticsAnticonvulsants

Abstract

The invention primarily relates to a photovoltaic module (1) obtained from a stack comprising: a first front layer (2); a plurality of photovoltaic cells (4); an encapsulating assembly (3) obtained by joining a front layer (3a) and a rear layer (3b) of an encapsulating material; a second rear layer (5). The first layer (2) comprises: a front layer made of a polymer material (2a); a front assembly (2b, 2c) comprising an interface front layer (2b) and a glass front layer (2c), with a thickness less than or equal to 2 mm, said front assembly (2b, 2c) being located between the polymer front layer (2a) and the encapsulating assembly (3), and the interface front layer (2b) being located between the polymer front layer (2a) and the glass front layer (2c). The front layer (3a) and the rear layer (3b) of an encapsulating material have a Young's modulus at 25° C. of strictly less than 50 MPa and of strictly greater than 150 Mpa, respectively.

IPC Classes  ?

• H10F 19/80 - Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
• H10F 19/85 - Protective back sheets

Abstract

The present description concerns an antenna comprising: an amplifier array comprising a plurality of first elementary cells; a transmitarray comprising a plurality of second elementary cells; and at least one source, wherein said at least one source is configured to irradiate, or to be irradiated by, the transmitarray, and the amplifier array is configured to irradiate and to be irradiated by the transmitarray.

IPC Classes  ?

• H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
• H01Q 13/02 - Waveguide horns
• H01Q 21/29 - Combinations of different interacting antenna units for giving a desired directional characteristic

Abstract

222O molar ratio of between 1 and 1.4, whereby a geopolymer slurry is obtained in which the electrically conductive carbon-based fillers are dispersed; then (c) allowing the geopolymer slurry obtained in step (b) to harden, whereby an electrically conductive composite material is obtained. The present invention also relates to the electrically conductive composite material obtained thereby and to the uses thereof.

IPC Classes  ?

• C04B 28/00 - Compositions of mortars, concrete or artificial stone, containing inorganic binders or the reaction product of an inorganic and an organic binder, e.g. polycarboxylate cements
• H01G 11/30 - Electrodes characterised by their material
• H01B 1/18 - Conductive material dispersed in non-conductive inorganic material the conductive material comprising carbon-silicon compounds, carbon, or silicon
• H01G 11/36 - Nanostructures, e.g. nanofibres, nanotubes or fullerenes
• H01G 11/38 - Carbon pastes or blendsBinders or additives therein
• H01G 11/86 - Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
• C04B 111/94 - Electrically conducting materials

Abstract

The invention lies in the field of passive immunotherapies for the prophylaxis and treatment of poisoning caused intentionally or accidentally by swallowing, injection or inhalation of ricin, which is a toxin derived from the Ricinus communis castor oil plant. The present invention specifically relates to an antibody with a high affinity for the ricin A chain and which enables in vitro neutralization of the toxin and also short- and long-term protection against said poisoning. The present invention also relates to a murine/human chimeric antibody and a humanized antibody for preventing or treating ricin poisoning.

IPC Classes  ?

• C07K 16/16 - Immunoglobulins, e.g. monoclonal or polyclonal antibodies against material from plants

Abstract

An error correction in resistive memories or flash memories protected by an error-correcting code is provided. A device makes it possible to correct at least two erroneous bits per code word stored in memory and combines a correcting module capable of correcting up to r−1 erroneous bits per code word, and a detecting module makes it possible to check the number of erroneous bits per code word, and is arranged to detect whether the read code word contains at most r−1 erroneous bits. If it does not, a sequence of decoding operations is initiated on a succession of words, each of which contains a single inverted bit with respect to the read code word. A check is carried out to check whether the number of erroneous bits in the version of the code word with inversion of one bit has become correctable in order to correct the code word.

IPC Classes  ?

• G06F 11/10 - Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens

Abstract

A method of reconstructing a spatial distribution of a characteristic (F) in an object, including a) acquisition of measurements (M) by a sensor, each measurement being able to be estimated a linear operator ((HF),P*F, (F)), applied to the spatial distribution of the characteristic (F), forming a forward model; b) with a processing unit, reconstruction of the spatial distribution of the object characteristic, by iterative minimization of an error, each iteration comprising an update of the spatial distribution of the object characteristic; where in step b), the minimized error includes a data attachment component (εD(f), εD (F)) including a deviation between the acquired measurements and the measurements estimated by the forward model; a regularization component (εR (f), εR (F)), including a sum of a norm of a spatial gradient of the feature, determined at different coordinates in the object.

IPC Classes  ?

• G06T 7/60 - Analysis of geometric attributes

Abstract

The present application concerns the use of endoprothesis covalently grafted with a fucoidan for treating aneurysms, in particular cerebral aneurysms, and their process for manufacturing the same. Improved healing of cerebral aneurysms was established in vivo on a rabbit model.

IPC Classes  ?

• A61L 31/16 - Biologically active materials, e.g. therapeutic substances
• A61L 31/02 - Inorganic materials
• A61L 31/10 - Macromolecular materials
• C08L 5/00 - Compositions of polysaccharides or of their derivatives not provided for in group or

Abstract

A main object of the invention is a method for making a SOEC/SOFC-type solid oxide stack operating at high temperature, including a plurality of electrochemical cells each formed by a cathode, an anode and an electrolyte interposed between the cathode and the anode, and a plurality of metal interconnectors each arranged between two adjacent electrochemical cells, each interconnector having two main planar faces, a first face (P1) of the two main planar faces comprising a metal coating layer (GN) in the form of a grid forming a contact layer with an electrochemical cell, the method including the step of spot-welding (S) the metal coating layer (GN) on the first face (P1) of the interconnector to enable fastening thereof.

IPC Classes  ?

• H01M 8/0286 - Processes for forming seals
• C25B 9/77 - Assemblies comprising two or more cells of the filter-press type having diaphragms
• C25B 13/02 - DiaphragmsSpacing elements characterised by shape or form
• C25B 13/07 - DiaphragmsSpacing elements characterised by the material based on inorganic materials based on ceramics
• H01M 8/021 - Alloys based on iron
• H01M 8/0217 - Complex oxides, optionally doped, of the type AMO3, A being an alkaline earth metal or rare earth metal and M being a metal, e.g. perovskites
• H01M 8/0228 - Composites in the form of layered or coated products
• H01M 8/0247 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the form
• H01M 8/0284 - Organic resinsOrganic polymers
• H01M 8/12 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
• H01M 8/2432 - Grouping of unit cells of planar configuration

Abstract

An electrical device having a capacitor including: a bottom electrode having a conductive structure, the conductive structure having a base surface and protruding walls, wherein the base surface of the conductive structure of the bottom electrode is lower than a top surface of the protruding walls and the base surface surrounds the protruding walls; a dielectric structure extending conformally over the bottom electrode; a top electrode extending conformally over the dielectric structure and having a stack of layers including a first conductive layer and a second conductive layer, wherein the second conductive layer has an opposite intrinsic mechanical stress compared to an intrinsic mechanical stress induced by the first conductive layer and the dielectric structure.

IPC Classes  ?

• H10D 1/68 - Capacitors having no potential barriers
• H10D 1/00 - Resistors, capacitors or inductors

Abstract

1x12M1M,x+1p, iM,iP,iiM,i+1M,i+1 with each integer i ranging from 1 to X, so as to convert, in frequency, by parametric pumping, the excitation contained in an electromagnetic mode i into an excitation of the electromagnetic mode i+1 and a transition i of the qudit in question, a system for reading the energy levels of the one or more qudits of the quantum system delivering a datum providing information on whether an incident microwave photon has been received or not.

IPC Classes  ?

• A61B 5/0507 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fieldsMeasuring using microwaves or radio waves using microwaves or terahertz waves
• A61B 5/055 - Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fieldsMeasuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
• A61B 5/00 - Measuring for diagnostic purposes Identification of persons
• G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control

Abstract

A device for receiving radio frequency signals for a magnetic resonance imaging/spectroscopy system including an intracardiac receiving resonant loop and a switch capable of being alternately in an open state such that the frequency of the receiving antenna is tuned to an operating frequency of the magnetic resonance imaging system, and in a closed state such that the frequency of the receiving resonant loop is detuned, the receiving device including a first transmission line having a conductor with a distal end electrically connected to the receiving resonant loop and a proximal end electrically connected to the switch such that the switch is intended to be located outside the human body when the receiving resonant loop is located inside a patient's heart.

IPC Classes  ?

• G01R 33/36 - Electrical details, e.g. matching or coupling of the coil to the receiver
• G01R 33/28 - Details of apparatus provided for in groups
• G01R 33/34 - Constructional details, e.g. resonators

Abstract

Ultrasound-based wireless battery-free implantable sensors comprising a solution-gated field-effect transistor This disclosure relates to wireless battery-free implantable sensors for biomedical applications. Ultrasound-based wireless communication is proposed as an alternative to electromagnetic communication. The implantable sensor comprises a piezoelectric element and a variable impedance load whose value is a function of a physiological parameter of interest. The load is a solution-gated field-effect transistor (SG-FET), preferably a transistor with a graphene channel. The load is connected to the piezo-electric element for wireless communication with an external device. Experiments show that an ultrasound echo signal can be modulated by the gate voltage of the transistor and that the modulated signal can be transmitted through a propagation medium such a biological tissue.

IPC Classes  ?

• A61B 5/00 - Measuring for diagnostic purposes Identification of persons

Abstract

The invention relates to an electrochemical cell unit comprising the following, in the following order across its thickness: a hydrogen electrode (200) comprising a support electrode layer (203) and a functional electrode layer (204) stacked one on top of the other; a solid electrolyte (300) comprising a thin layer (302) having a first surface (305) and a second surface (306); and an oxygen electrode (400), characterised in that the solid electrolyte (300) comprises a frame (303) which extends from the first face (305) of the thin layer (302) and forms a cavity (304) in which the hydrogen electrode (200) is at least partially arranged. The invention relates to the optimisation of a solid oxide cell, including solid oxide fuel cells and solid oxide electrolyser cells.

IPC Classes  ?

• H01M 8/1213 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the electrode/electrolyte combination or the supporting material
• H01M 8/1226 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the electrode/electrolyte combination or the supporting material characterised by the supporting layer
• H01M 8/1246 - Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte characterised by the process of manufacturing or by the material of the electrolyte the electrolyte consisting of oxides
• H01M 8/2432 - Grouping of unit cells of planar configuration
• H01M 4/88 - Processes of manufacture
• C25B 9/00 - Cells or assemblies of cellsConstructional parts of cellsAssemblies of constructional parts, e.g. electrode-diaphragm assembliesProcess-related cell features

Abstract

2.

IPC Classes  ?

• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
• H10F 55/00 - Radiation-sensitive semiconductor devices covered by groups , or being structurally associated with electric light sources and electrically or optically coupled thereto
• H10H 29/01 - Manufacture or treatment
• H10H 29/14 - Integrated devices comprising at least one light-emitting semiconductor component covered by group comprising multiple light-emitting semiconductor components
• H10H 29/85 - Packages
• H10H 29/49 - Interconnections, e.g. wiring lines or terminals

Abstract

The present invention relates to a method for irrigating a porous substrate comprising the steps of: preparing a foam consisting of a dispersion of air bubbles in a foaming aqueous solution, said foam comprising a liquid fraction of less than or equal to 15% by volume; spreading, over the surface of the porous substrate, a layer of the foam thus prepared, the thickness of the layer being greater than 5 cm, then maintaining the assembly long enough for at least a part of the liquid contained in the foam to infiltrate the porous substrate. The present invention also relates to the use of this method to recover an element of interest contained in a porous substrate and a particular aqueous foam.

IPC Classes  ?

• C22B 3/04 - Extraction of metal compounds from ores or concentrates by wet processes by leaching
• B09C 1/02 - Extraction using liquids, e.g. washing, leaching

Abstract

A method for processing animal products, in particular products from poultry farming, includes: a) chemically treating by placing collected waste in contact with an ammonia-based buffer with a pH of at least 8; b) heating the material resulting from step a) in a humid medium to a temperature of at least 70° C.; c) separating the organic matter and inorganic matter in the presence of water from the material resulting from step b), then separated collection of (i) the liquid fraction having the inorganic matter, and (ii) the solid fraction having the organic matter; and d) adding the liquid fraction resulting from step c (ii), having the inorganic matter, in a basin filled with water held in a controlled manner at a setpoint temperature ranging from 20° C. to 42° C., preferably from 28° C. to 35° C., in which a protein-rich plant or bacterium is cultivated, in particular microalgae or cyanobacteria, preferably spirulina.

IPC Classes  ?

• C05F 17/05 - Treatments involving invertebrates, e.g. worms, flies or maggots
• A01G 9/14 - Greenhouses
• C05F 3/06 - Apparatus for their manufacture
• C05F 17/20 - Preparation of fertilisers characterised by biological or biochemical treatment steps, e.g. composting or fermentation using specific microorganisms or substances, e.g. enzymes, for activating or stimulating the treatment

Abstract

A method for manufacturing a crystal layer includes using a substrate having a surface film made of a dichalcogenide of a transition metal, designated MX2, where “M” denotes a transition metal and “X” denotes a chalcogen, the surface film including a set of monolayers bonded together by van der Waals bonds; forming a polycrystalline aluminium nitride AlN film, having grain boundaries, on the surface film; and diffusing metal elements into the surface film, through the grain boundaries of the polycrystalline aluminium nitride AlN film, the metal elements being chosen to react chemically with MX2 by a redox reaction so as to convert the van der Waals bonds into covalent bonds, A crystalline layer is formed on the polycrystalline aluminium nitride AlN film after the diffusing.

IPC Classes  ?

• C30B 28/14 - Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
• C30B 29/40 - AIIIBV compounds
• C30B 29/68 - Crystals with laminate structure, e.g. "superlattices"
• C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Abstract

A substrate is provided, including: a first layer based on a semiconductive material; a second layer surmounting the first layer; and a plurality of buried vias extending from the second layer over a portion of the first layer, each via of the plurality of buried vias being delimited by a side wall, a bottom wall, and an upper wall opposite the bottom wall, at least one assembly of the plurality of vias forming a pattern repeated along at least one direction of a main extension plane of the first layer and the second layer. A method for manufacturing the substrate is also provided. A method for manufacturing a microelectronic device is also provided.

IPC Classes  ?

• H01L 23/48 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device

Abstract

csupjnfsupinfinf), the upper metal sheet (10) comprises a longitudinal series of internal ribs (15i) and external ribs (15e), each having an opposite, closed end that is not connected to the external rib (12e) or the internal rib (12i), respectively.

IPC Classes  ?

• H01M 8/0206 - Metals or alloys
• H01M 8/0258 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant
• H01M 8/0267 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors having heating or cooling means, e.g. heaters or coolant flow channels
• H01M 8/0276 - Sealing means characterised by their form
• C25B 9/65 - Means for supplying currentElectrode connectionsElectric inter-cell connections
• H01M 8/0254 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the form corrugated or undulated

Abstract

The present description concerns a method of training a neural network (202) comprising: the generation of a modified image, by a modified data generator, based on a first image, the modified image comprising at least one outlier pixel value with respect to the first image; the supplying of the modified image to the network; the generation, by the network, of a corrected image; the supplying of the corrected image, by the network, and the supplying of an indication of the position of the at least one modified pixel, by the generator, to a computing circuit (210) the generation of an error value, based on the application of a loss function, by the computing circuit, taking as inputs the first image, the indication, and the corrected image; the correction of parameters associated with the network by backpropagation of the error in the network.

IPC Classes  ?

• G06T 5/70 - DenoisingSmoothing
• G06T 3/4015 - Image demosaicing, e.g. colour filter arrays [CFA] or Bayer patterns
• G06T 5/60 - Image enhancement or restoration using machine learning, e.g. neural networks

Abstract

The invention relates to a bipolar plate for an electrochemical cell comprising upper and lower metal sheets (10, 20) and first and second headers (2, 3), wherein, in a first intermediate zone extending between the upper (15) and lower (25) ribs of the first header on the one hand and the upper (12) and lower (22) external ribs on the other hand, the upper conductive sheet (10) comprises an upper recess (14), referred to as an intermediate upper recess, and the lower conductive sheet (20) comprises a lower rib (24), referred to as an intermediate lower rib, positioned over and in contact with the intermediate upper recess (14).

IPC Classes  ?

• H01M 8/0206 - Metals or alloys
• H01M 8/0254 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the form corrugated or undulated
• H01M 8/0258 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors characterised by the configuration of channels, e.g. by the flow field of the reactant or coolant
• H01M 8/0267 - CollectorsSeparators, e.g. bipolar separatorsInterconnectors having heating or cooling means, e.g. heaters or coolant flow channels
• H01M 8/0271 - Sealing or supporting means around electrodes, matrices or membranes
• H01M 8/2483 - Details of groupings of fuel cells characterised by internal manifolds
• C25B 1/04 - Hydrogen or oxygen by electrolysis of water

Abstract

The invention relates to a resolution target for infrared imaging, the target comprising a plurality of patterns formed on the front face of a support (22), laterally spaced in pairs in a main plane, and intended to form dark patterns on a light background when the resolution target is illuminated by the infrared beam. Each pattern is formed by a Fabry-Pérot-type resonant cavity (CR) comprising a lower reflector (23) and an upper reflector (25) between which an intermediate layer (24) is located; wherein the lower reflector (23), located on the side of the support (22), is less reflective than the upper reflector (25). The intermediate layer (24) extends continuously from one resonant cavity (CR) to another, and thus also extends into an intermediate zone (ZI) surrounding the resonant cavities in the main plane.

IPC Classes  ?

• G01J 3/26 - Generating the spectrumMonochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filter
• G01J 3/12 - Generating the spectrumMonochromators
• G01J 5/48 - ThermographyTechniques using wholly visual means
• G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
• G01M 11/02 - Testing optical properties
• H04N 17/00 - Diagnosis, testing or measuring for television systems or their details
• G01J 5/90 - Testing, inspecting or checking operation of radiation pyrometers

Abstract

The invention relates to a method for locating a magnetic field-measuring assembly comprising at least one magnetoresistive sensor and/or Hall sensor, comprising the steps of: a:/ generating, by way of an electromagnetic field-generating device (1), a magnetic field of variable amplitude and/or shape such that the position of a predetermined value of the amplitude of the magnetic field varies along at least two directions (X, Y) at different frequencies; b/ measuring the magnetic field along each of the directions at the frequency corresponding to each direction by way of the magnetic field-measuring assembly; c/when the magnetic field-measuring assembly detects the predetermined value of the magnetic field along each of the directions, determining the position of the magnetic field-measuring assembly.

IPC Classes  ?

• G01R 33/07 - Hall-effect devices
• A61B 5/06 - Devices, other than using radiation, for detecting or locating foreign bodies
• G01R 33/09 - Magneto-resistive devices
• G01R 33/02 - Measuring direction or magnitude of magnetic fields or magnetic flux
• A61B 34/20 - Surgical navigation systemsDevices for tracking or guiding surgical instruments, e.g. for frameless stereotaxis

Abstract

A device to measure the activity of a radioactive liquid, including a detection module, which extends around a measurement chamber that is intended to contain the liquid, and which is configured to detect ionizing radiation and to generate a detection signal; and a processing unit, which is connected to the detection module, and programmed to estimate an activity of the radioactive liquid based on the detection signal. The detection module comprises a solid-state scintillator detector, extending around the measurement chamber; and at least two photodetectors that are optically coupled to the scintillator detector. The device comprises a capillary tube, extending around a longitudinal axis, the capillary tube being arranged to be placed in a measurement position, and the capillary tube forming the measurement chamber.

IPC Classes  ?

• G01T 1/167 - Measuring radioactive content of objects, e.g. contamination
• G01T 1/202 - Measuring radiation intensity with scintillation detectors the detector being a crystal

Abstract

An electronic system carrying out a challenge-response type authentication of a user and of a sensor, including the sensor authenticating the user and including a PUF; a memory device memorising valid identification data of the user and of the sensor; a calculator; the electronic system being configured to implement the challenge-response type authentication of the sensor. Response data of the sensor are generated by the PUF of the sensor. Then, once the sensor is authenticated as being valid, the electronic system implements the challenge-response type authentication of the user, during which data exchanged between the calculator and the sensor are encrypted using a first encryption key calculated based on challenge data of the sensor and the response data of the sensor, the first encryption key being shared between the calculator and the sensor.

IPC Classes  ?

• H04L 9/32 - Arrangements for secret or secure communicationsNetwork security protocols including means for verifying the identity or authority of a user of the system

Abstract

A motorized finger includes a base for fastening to a plate connecting to a robotic arm, a first phalanx connected to the base by at least one first articulation, a second phalanx connected to the first phalanx by at least one second articulation, and a first actuator fastened to the base and connected at least to the first phalanx in order to move the phalanges between two end positions.

IPC Classes  ?

• B25J 15/08 - Gripping heads having finger members

Abstract

A method for detecting one or more anomalies in a structure, including a learning phase that includes obtaining healthy data respectively associated with N distinct sets of conditions of use of the structure; projecting the healthy data into a latent space with a dimension smaller than the dimension of the healthy data; and determining the outline of the set of healthy data projected into the latent space. Further, an operational phase includes obtaining, through a preliminary measurement, test data representative of the current state of the structure; projecting the test data into the latent space; and detecting of at least one current anomaly in the structure as soon as a test data element is outside the outline.

IPC Classes  ?

• G01M 7/02 - Vibration-testing

Abstract

An acoustic transducing device includes: a piezoelectric converter interposed between a front electrode and a rear electrode, the piezoelectric converter being formed from a piezoelectric material; a front aperture arranged in such a way that the front electrode is placed between the piezoelectric material and the front aperture; and a rear component, applied against the rear electrode or forming the rear electrode, the rear component forming an acoustic backing element of the device. The device is configured to transmit an acoustic wave to the front aperture or to detect an acoustic wave propagating from the front aperture. The rear component includes a porous metal having a melting point greater than 200° C.

IPC Classes  ?

• B06B 1/06 - Processes or apparatus for generating mechanical vibrations of infrasonic, sonic or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction

Abstract

A device and a method automatically redeploys the geographical coverage of a wireless telecommunications network interconnecting a plurality of wireless mobile devices and a common back base. The method includes: partitioning an initial geographical coverage area of a wireless telecommunications network into sub-areas; assigning a mobile vehicle equipped with a wireless base station to each sub-area, with each mobile vehicle equipped with a wireless base station being connected to the back base via a wireless link, and being positioned in a geographical position offering wireless network coverage over the sub-area to a set of wireless mobile devices; monitoring the tethering of each wireless mobile device to at least one wireless base station of the initial geographical coverage area; determining whether a wireless mobile device is no longer tethered to any wireless base station of the initial geographical coverage area; determining, if the wireless mobile device is no longer tethered to any wireless base station, a geographical position for a mobile vehicle equipped with a wireless base station as a function of the geographical position of the untethered wireless mobile device, with the geographical position allowing wireless network connectivity to be established between the untethered wireless mobile device and the back base; and deploying a mobile vehicle equipped with a wireless base station to the geographical position, with the position defining a new geographical coverage sub-area corresponding to an extension of the initial geographical coverage area.

IPC Classes  ?

• H04W 16/18 - Network planning tools
• H04L 41/40 - Arrangements for maintenance, administration or management of data switching networks, e.g. of packet switching networks using virtualisation of network functions or resources, e.g. SDN or NFV entities
• H04L 43/0811 - Monitoring or testing based on specific metrics, e.g. QoS, energy consumption or environmental parameters by checking availability by checking connectivity
• H04W 84/00 - Network topologies

Abstract

The invention relates to an installation (10) intended for the production of solid oxide stacks (14), which comprises: - an enclosure (12) of main axis A in which the stacks (14) are intended to be placed coaxially with the main axis A; - a first shaft (22) and a second shaft (24) between which the stacks (14) are placed; - heating elements (32) arranged in the enclosure (12), characterized in that the main axis A of the enclosure (12) is horizontal and perpendicular to a vertical axis according to the Earth's gravity, and in that the enclosure (12) comprises means for driving the stacks and shafts (22, 24) in rotation about the main axis A.

IPC Classes  ?

• H01M 8/2404 - Processes or apparatus for grouping fuel cells

Abstract

Disclosed is a process for fabricating a semiconductor device, the process comprising, starting with an initial SOI structure, SOI being the acronym of silicon-on-insulator, the initial SOI structure comprising a silicon substrate (2), a layer of buried oxide (4), abbreviated BOX, and a first upper layer (6) of silicon on the layer of buried oxide (4), forming by epitaxy a first epitaxial layer (8) of the isotope of silicon Si28on the first upper layer (6), a homogenizing anneal via which the first epitaxial layer (8) of the isotope of silicon Si28and the first upper layer (6) of silicon then form a second upper layer with a lower concentration of the isotope Si29 than initially, and thinning the second upper layer.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/762 - Dielectric regions
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

The invention is a driving device with a network of N driving units, each having an energy-storing element and a switching matrix for series or parallel connection. A State of Charge mapping unit measures the state of charge for N elements, identifying a first set with low charge, and a second set. A control unit commands switching matrices through invest and recovery phases in cycles. In each cycle, a stacking sequence configures the network for capacitive load connection. The control unit calculates the sequence so that, during the recovery phase, elements in the first set receive charges from the capacitive load, previously supplied during the invest phase by elements in the second set.

IPC Classes  ?

• H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
• H02M 1/00 - Details of apparatus for conversion
• H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
• H02J 7/34 - Parallel operation in networks using both storage and other DC sources, e.g. providing buffering
• H10N 30/80 - Constructional details

Abstract

A method for accelerating electrons using laser-plasma interaction, wherein at least one laser pulse is directed onto a surface of a target in the condensed state, the surface being covered with a gas layer, the intensity of the at least one pulse being sufficient in order to: in a step A, generate, from the target in the condensed state, a dense plasma; in a step B, after reflection by the dense plasma, generate a wakefield in the gas layer; in a step C, heat the electrons of the dense plasma to an energy such that a bunch of the electrons is injected into the wakefield in order to be accelerated there, the pulse, or at least the pulse intended to be reflected by the dense plasma and to heat the electrons of the latter, being s-polarized and obliquely incident on the target.

IPC Classes  ?

• H05H 15/00 - Methods or devices for acceleration of charged particles not otherwise provided for

Abstract

A quantum device has a plurality of quantum dots arranged in a two-dimensional matrix, a first gate level surmounting the plurality of quantum dots, a second gate level surmounting the first gate level, and a plurality of charge detectors capacitively coupled to the quantum dots. The plurality of charge detectors is integrated in one from among the first and second gate levels, each charge detector comprising a portion located between the gates of the gate level considered. The invention also relates to a method for producing such a quantum device.

IPC Classes  ?

• G06N 10/40 - Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
• G06N 10/20 - Models of quantum computing, e.g. quantum circuits or universal quantum computers

Abstract

The invention relates to a steel conduit pipe (10) configured to transport a gas comprising dihydrogen. On the inner wall (14), the steel comprises a surface barrier layer (20) having a thickness (22) starting from the inner wall (14) and within which the steel has different microstructural parameters than those of the steel outside the surface barrier layer (20) and configured to tend to oppose the passage of gas through the thickness (22) of the surface barrier layer (20). This layer is obtained by performing a mechanical nanostructuring surface treatment by ultrasonic shot peening under the effect of random impacts of spherical balls (26) which are moved in a vibratory manner by an ultrasonic power generator (28). The invention also relates to a method for manufacturing the conduit pipe (10).

IPC Classes  ?

• C21D 1/09 - Surface hardening by direct application of electrical or wave energySurface hardening by particle radiation
• B21D 31/06 - Deforming sheet metal, tubes or profiles by sequential impacts, e.g. hammering, beating, peen forming
• B21D 35/00 - Combined processes according to methods covered by groups
• B21J 5/00 - Methods for forging, hammering, or pressingSpecial equipment or accessories therefor
• C21D 7/06 - Modifying the physical properties of iron or steel by deformation by cold working of the surface by shot-peening or the like
• C21D 8/10 - Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of tubular bodies
• C21D 9/08 - Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articlesFurnaces therefor for tubular bodies or pipes
• E03B 1/00 - Methods or layout of installations for water supply
• F16L 9/02 - Rigid pipes of metal
• F17D 1/00 - Pipe-line systems
• B24C 1/10 - Methods for use of abrasive blasting for producing particular effectsUse of auxiliary equipment in connection with such methods for compacting surfaces, e.g. shot-peening
• B24C 3/32 - Abrasive blasting machines or devicesPlants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
• F17D 5/06 - Preventing, monitoring, or locating loss using electric or acoustic means

Abstract

The invention relates to a heat exchanger module (1) with two fluid circuits, extending along a longitudinal axis (Z) and comprising: - a shell having a square or rectangular cross section; - a heat exchange structure arranged in the shell, wherein the structure is a triply periodic minimal surface (TPMS) structure having Schwartz-D elementary patterns that define the two fluid circuits; wherein the TPMS structure is oriented such that the interfaces of the Schwartz-D elementary patterns at the periphery of the structure are aligned with the longitudinal edges of the shell.

IPC Classes  ?

• B33Y 80/00 - Products made by additive manufacturing
• F28F 7/02 - Blocks traversed by passages for heat-exchange media
• F28F 9/02 - Header boxesEnd plates

Abstract

A method for electrochemically activating a material comprising hydronium ion-conducting amyloid fibers and glycosylated proteins, in which the method includes placing at least part of the material in contact with a water vapor, electrolyzing at least part of the water vapor which is in contact with the material, and obtaining an activated material. The invention also relates to an activated material obtained in this way and to it use for generating electrical energy.

IPC Classes  ?

• H01M 8/16 - Biochemical fuel cells, i.e. cells in which microorganisms function as catalysts

Abstract

The present invention relates to a method to create an artificial tissue-like structure, said method relying on the use of a first layer A and a second ECM layer B, into or on which is then introduced living cells, which are then cultured in a viscous cell growth medium layer C containing high molecular weight viscous water-soluble polymers formed on top of layer B. The invention also relates to an artificial tissue-like structure obtained from the method as defined above, said structure containing at least a gelled layer B of extracellular matrix (ECM) proteins comprising living cells, covered by a viscous cell growth medium layer C containing molecular weight water-soluble polymers.

IPC Classes  ?

• C12N 5/00 - Undifferentiated human, animal or plant cells, e.g. cell linesTissuesCultivation or maintenance thereofCulture media therefor
• A61L 27/36 - Materials for prostheses or for coating prostheses containing ingredients of undetermined constitution or reaction products thereof
• C12N 5/071 - Vertebrate cells or tissues, e.g. human cells or tissues
• A61L 27/38 - Animal cells

Abstract

The invention relates to a method for preparing a cathode material for a battery, comprising a step of obtaining this cathode material in the form of a mixture of so-called primary particles, with a monomodal size distribution and a volume mean diameter of less than or equal to 2 μm, then a step of shaping said mixture of primary particles by granulation by grinding in a ball mill, in a mixture of organic solvents comprising a polar organic solvent and an apolar organic solvent, the polar organic solvent and the apolar organic solvent being immiscible. The cathode material in particulate form thus obtained has a good electrochemical performance, a low reactivity and a high energy density.

IPC Classes  ?

• H01M 4/04 - Processes of manufacture in general
• H01M 4/02 - Electrodes composed of, or comprising, active material
• H01M 4/1391 - Processes of manufacture of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
• H01M 4/58 - Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFySelection of substances as active materials, active masses, active liquids of polyanionic structures, e.g. phosphates, silicates or borates
• H01M 4/62 - Selection of inactive substances as ingredients for active masses, e.g. binders, fillers