Splitting an address translation cache (ATC) into two portions can reduce costs and maintain efficient retrieval of data. One portion can be disposed in a first location while a second portion can be disposed in a second location distinct from the first location. The first location can be in the controller. The second location can be in a host memory buffer (HMB) or in a memory device separate from the controller. To obtain translated addresses, untranslated addresses can be searched in the first portion and the corresponding translated addresses can be retrieved from the second portion. When invalidating untranslated addresses, the untranslated addresses of the first portion can be deleted without a need to delete corresponding translated addresses in the second portion. To improve ATC storage capacity, grouping of untranslated addresses is possible using most significant bytes (MSBs).
G06F 12/123 - Replacement control using replacement algorithms with age lists, e.g. queue, most recently used [MRU] list or least recently used [LRU] list
Instead of an arbitration over the link not considering bursts, a smart scheduler in a solid state drive (SSD) host interface is burst aware. The scheduler considers the type of transactions that are going to be sent over the interface. The scheduler sends the transactions in the most efficient way while maximizing the efficiency over the host DRAM. The schedulers may be calibrated from time to time on-the-fly to find the optimal configurations adapted to the current workload. The scheduler will organize the packets selected by the arbitration module so that the data transfers are sent in a burst of a predetermined sized to the host for optimum performance. For further optimization other packet types are sent in bursts as well.
G06F 13/28 - Handling requests for interconnection or transfer for access to input/output bus using burst mode transfer, e.g. direct memory access, cycle steal
G06F 13/10 - Program control for peripheral devices
G06F 13/24 - Handling requests for interconnection or transfer for access to input/output bus using interrupt
3.
Data Storage Device and Method for Multiple Meta Die Balancing
A host can write data to and/or read data from a memory in a data storage device. In addition to writing host data in the memory, the data storage device can perform internal data movement/relocation (e.g. for wear leveling). The data storage device and method provided herein can balance host writes and relocation operations in multiple meta die systems by reducing the number of open blocks across the system.
A method of performing nucleic acid sequencing may comprise using a disintegrator situated in a fluidic channel of a sequencing device to cleave off a portion of a nucleic acid molecule in the fluidic channel; applying an electrostatic force to divert the portion of the nucleic acid molecule through a nanopore; detecting an ionic current through the nanopore; and determining an identity of at least one nucleotide of the portion of the nucleic acid molecule based at least in part on the ionic current. A system for sequencing nucleic acids may comprise an array comprising a plurality of sequencing devices, each comprising a fluidic channel, a disintegrator embedded in the fluidic channel, and a nanopore coupled to an exit end of the fluidic channel; and detection circuitry coupled to the array and configured to detect ionic currents through the nanopores.
Instead of all the NAND memory having asynchronous independent plane read (AIPR) enabled, a system utilizes a master-SSD to route data to multiple client SSDs via a controller memory buffer (CMB) according to the underlying NAND hardware (HW) of each of the client SSDs. The master-SSD will also analyze the application data retrieval of the logical data that is to be routed. The system comprises SSDs with AIPR NAND circuitry and SSDs with non-AIPR NAND circuitry. The system further comprises the master-SSD that will route data to any of the SSDs in the system based on the data retrieval type (sequential or random). Each of the SSDs can be of a different type beyond the NAND chip, such as HW IPs or specific firmware (FW) that is tuned towards specific data routing and retrieval requirements.
Reducing extra traffic on the PCIe bus by initiating speculative address translation requests and aggregating them with normal address translation request can lead to significantly improved data retrieval performance. This can be achieved by issuing speculative address translation requests based on history or structure of host buffer pointers previously issued by each tenant. If the device controller determines that there is a high-hit rate probability, the controller will coalesce the speculative requests with the normal address translation request. The coalescing may be accomplished by dynamically changing the length field in the address translation request. The controller may also collect statistics of the speculative address translation requests per tenant. If the controller determines that the performance gain for a specific tenant's workload becomes minimal, the speculative request feature is disabled.
The present disclosure generally relates to a deep neural network (DNN) device utilizing spin orbital-spin orbital (SO-SO) devices. The SO-SO devices each includes two SOT layers, a first spin orbit torque (SOT1) layer, a second spin orbit torque (SOT2) layer, and a ferromagnetic layer disposed between the SOT1 and SOT2 layer. Each SO-SO device further comprises three terminals, one per each SOT layer, for in plane current flow to or from the respective SOT layer, and one for perpendicular current flow through multiple layers, or the overall stack, of the SO-SO device. The SO-SO device thus efficiently provides spin-to-charge and charge-to-spin mechanisms in the same device, and can be flexibility configured to perform various functions of a neural node of a DNN. These functions include storing programmed weights, multiplying inputs and weights and summing such multiplication results, and performing an activation function to determine a neural node output.
Disclosed herein are devices, systems, and methods for sequencing nucleic acids using a nanopore. A nucleic acid molecule is fragmented into smaller portions (e.g., individual nucleotides), which are then routed through a nanopore for detection. A device for single-nucleotide sequencing may include a fluidic channel, a disintegrator configured to cleave off portions of a nucleic acid in the fluidic channel, a nanopore coupled to the fluidic channel, and first and second electrodes situated to apply an electrostatic force on the portions of the nucleic acid to divert them out of the fluidic channel and through the nanopore.
Disclosed herein are devices, systems, and methods for sequencing nucleic acids using a nanopore. A nucleic acid molecule is fragmented into smaller portions (e.g., individual nucleotides), which are then routed through a nanopore for detection. A device for single-nucleotide sequencing may include a fluidic channel, a disintegrator configured to cleave off portions of a nucleic acid in the fluidic channel, a nanopore coupled to the fluidic channel, and first and second electrodes situated to apply an electrostatic force on the portions of the nucleic acid to divert them out of the fluidic channel and through the nanopore.
A method of performing nucleic acid sequencing may comprise using a disintegrator situated in a fluidic channel of a sequencing device to cleave off a portion of a nucleic acid molecule in the fluidic channel; applying an electrostatic force to divert the portion of the nucleic acid molecule through a nanopore; detecting an ionic current through the nanopore; and determining an identity of at least one nucleotide of the portion of the nucleic acid molecule based at least in part on the ionic current. A system for sequencing nucleic acids may comprise an array comprising a plurality of sequencing devices, each comprising a fluidic channel, a disintegrator embedded in the fluidic channel, and a nanopore coupled to an exit end of the fluidic channel; and detection circuitry coupled to the array and configured to detect ionic currents through the nanopores.
The present disclosure generally relates to a magnetic recording system comprising a magnetic recording head. The magnetic recording head comprises a main pole, a shield, and a spintronic device disposed between the main pole and the shield. The spintronic device comprises a field generation layer (FGL) spaced a distance of about 2 nm to about 3 nm from the main pole, a first spacer layer disposed on the FGL, a spin torque layer (STL) disposed on the first spacer layer, a second spacer layer disposed on the STL, and a negative polarization layer (NPL) disposed between the second spacer layer and the shield. The spintronic device has a length of about 17 nm to about 21. During operation, the STL has a magnetization precession of about 16 degrees to about 170 degrees, and the FGL has a magnetization precession of about 60 degrees to about 70 degrees.
An external data storage device, without a battery, provides a user-selectable low power mode. The external data storage device includes storage media for storing data and a data port for receiving power and transmitting data to a host device. The external storage data device includes control circuitry configured to negotiate delivery of a first amount of power from the host device in response to connecting the external data storage device to the host device, receive the first amount of power from the host device, receive a selection, via an input device, of a reduced power mode from a user, and reduce power consumption from the host device to a second amount of power lower than the first amount of power in response to receiving the selection of the reduced power mode.
G06F 3/06 - Digital input from, or digital output to, record carriers
H04W 4/80 - Services using short range communication, e.g. near-field communication [NFC], radio-frequency identification [RFID] or low energy communication
Example systems and methods for using a multi-tier error correction code distributed among oligos for DNA data storage are described. A data unit may be encoded as a set of codewords where each codeword is distributed as symbols on different oligos. The codewords may include a set of first tier codewords that include CRC and ECC redundancy data and one or more additional tiers of codewords that include permuted data and corresponding ECC redundancy data. Decoding may include a sequence of decoding iterations between the first tier of codewords and additional tiers of codewords.
The present disclosure is generally related to a magnetic recording device comprising a magnetic recording head. The magnetic recording head comprises a main pole, a shield, and a spintronic device disposed between the main pole and the shield. The spintronic device comprises two field generation layers (FGLs), two spin polarization layers (SPLs), and two spin kill layers. The spintronic device further comprises one or more optional thin negative beta material layers, such as layers comprising FeCr, disposed in contact with at least one of the spin kill layers. When electric current is applied, the spin kill layers and optional negative beta material layers eliminate or reduce any spin torque between the FGLs and the SPLs.
The present disclosure is generally related to a magnetic recording device comprising a magnetic recording head. The magnetic recording head comprises a main pole, a hot seed layer, and a spintronic device disposed between the main pole and the hot seed layer. The spintronic device comprises two field generation layers (FGLs), two spin polarization layers (SPLs), and two spin kill layers. The second SPL of the spintronic device drives the second FGL. The spintronic device further comprises one or more optional thin negative beta material layers, such as layers comprising FeCr, disposed in contact with at least one of the spin kill layers. When electric current is applied, the spin kill layers and optional negative beta material layers eliminate or reduce any spin torque between the FGLs and the SPLs.
Various illustrative aspects are directed to a data storage device, comprising one or more disks; at least one actuator mechanism configured to position at least a first head proximate to a first disk surface and a second head proximate to a second disk surface; and one or more processing devices. The one or more processing devices are configured to: assign logical tracks to physical tracks of the disk surfaces such that a respective logical track comprises: at least a portion of sectors of a primary physical track, the primary physical track being on the first disk surface; and at least a portion of sectors of a donor physical track, the donor physical track being on the second disk surface. The one or more processing devices are configured to perform, using the first head and the second head, a data access operation with at least one of the logical tracks.
The present disclosure is generally related to a deep neural network (DNN) device comprising a plurality of spin-orbit torque (SOT) cells. The DNN device comprises an array comprising n rows and m columns of nodes, each row of nodes coupled to one of n first conductive lines, each column of nodes coupled to one of m second conductive lines, each node of the n rows and m columns of nodes comprising a plurality of SOT cells, each SOT cell comprising: at least one SOT layer, at least one ferromagnetic (FM) layer, and a controller configured to store at least one corresponding weight of an n×m array of weights of a neural network in each of the SOT cell. The FM layer may comprise two or more domains, two or more elliptical arms, or two or more states.
Methods and apparatus for power management in data storage devices are provided wherein conformal prediction is employed to determine correction terms for applying to power-per-processing event (P/PE) values. One such data storage device includes a non-volatile memory (NVM), a set of hardware processing engines, and a power sensor to detect a total power consumption of the set of hardware processing engines. A processor is configured to determine a P/PE value for each of the set of processing engines based on total power consumption measurements using a least squares procedure. A conformalization procedure is applied to sequences of P/PE values to calibrate the P/PE values by determining correction terms for applying to the P/PE values to provide guaranteed power prediction intervals. Delivery of power to the processing engines is then controlled based on the corrected P/PE event values in accordance with a power budget. On-line and off-line examples are provided.
Methods and apparatus for energy management in data storage devices are provided. One such data storage device (DSD) includes a non-volatile memory (NVM), a set of hardware processing engines, and a power sensor to detect a total power consumption of the set of hardware processing engines. A processor is configured to determine an energy-per-processing event value for each of the set of processing engines based on total power consumption measurements and processing event duration values, then control energy delivery to the processing engines based on the energy-per-processing event values in accordance with an energy budget. In some examples, the DSD employs a least-squares procedure to estimate power-per-processing event values so the values can be determined without needing to measure individual power consumption of the processing engines. The power-per-processing event values are converted to energy-per-processing event values based on corresponding processing event durations. A recursive least-squares update procedure is also described.
An electronics backplane assembly includes respective first and second floating backplane connector assemblies each having a backplane connector coupled to a corresponding backplane plate movably coupled with a chassis wall, and a pair of stepped stoppers coupled to the chassis wall and positioned on each side of each backplane plate. Each stepped stopper pair includes a step at a different distance from the chassis wall and positioned to provide a reactive force to the corresponding backplane plate for incrementally engaging respective backplane connectors of an electronics module with a corresponding floating backplane connector. Each floating backplane connector assembly may include a pair of guide stoppers having a stopper structure at respective positions, coupled to the chassis wall and protruding through holes in each backplane plate, where each backplane plate is positioned for connector engagement between the step structure of each stepped stopper and the stopper structure of each guide stopper.
06 - Common metals and ores; objects made of metal
09 - Scientific and electric apparatus and instruments
14 - Precious metals and their alloys; jewelry; time-keeping instruments
16 - Paper, cardboard and goods made from these materials
17 - Rubber and plastic; packing and insulating materials
18 - Leather and imitations of leather
24 - Textiles and textile goods
25 - Clothing; footwear; headgear
28 - Games; toys; sports equipment
35 - Advertising and business services
37 - Construction and mining; installation and repair services
38 - Telecommunications services
41 - Education, entertainment, sporting and cultural services
42 - Scientific, technological and industrial services, research and design
Goods & Services
Personal identification tags of metal; nonluminous and non-mechanical metal signs; trophies of common metal; metal hardware, namely, general use wall and ceiling mounts for audio, video or computer equipment. Backup drives for computers; blank flash memory cards; blank usb flash drives; cases for data storage devices; computer disk drives; computer hardware and software for data storage; computer hardware; computer memories; computer memory devices; computer network hardware; computer peripherals; computer software to enable retrieval of data; computer software; data cables; data compression software; downloadable mobile applications; electronic circuit cards; electronic memories; encryption software; flash card adapters; flash card readers; flash memory card; flash memory drives; flash memory; hard disk drives; integrated circuit chips; magnetic data carriers, recording discs; memory card cases; memory cards; memory cards for video game machines; portable flash memory devices; portable music players; power cables; secure digital (SD) memory cards; semiconductor memory devices; software for operating and administering data storage devices; solid state drives; usb flash drives; wafers for integrated circuits; scientific apparatus and instruments; calibrating rings; diagnostic apparatus, not for medical purposes; measuring apparatus. Watches, clocks, jewelry, trophies; pins being jewelry; Key chains comprised of split rings with decorative fobs or trinkets; Key rings comprised of split rings with decorative fobs or trinkets; medals and medalions. Cardboard boxes; catalogues; computer hardware reference manuals; computer manuals; instruction sheets; instructional and teaching materials (other than apparatus); manuals for computer software; manuals for instructional purposes; Packaging materials of paper; paper boxes; paper for wrapping and packaging; paper labels; plastic bags for packing; plastic film for packaging; printed booklets; printed brochures; printed informational flyers; printed informational sheets; printed publications; printed leaflets; printed manuals; printed matter; printed newsletters; printed pamphlets; signboards of paper or cardboard; writing instruments; pens [office requisites]; pencils; notebooks; stationery; stickers [stationery]; paper; copying paper [stationery]. Articles made from rubber, namely bags, pouches and carrying cases for computer storage devices. Articles made from leather and imitations of leather, namely, bags, pouches and carrying cases for computer storage devices, tablets, smartphones, data storage devices, and media players; backpacks, carry all bags and travel bags; umbrellas; plastic key chain tags, plastic luggage tags. Textiles and textile goods; towels. Clothing, jackets, shirts, sweaters, sweatshirts, t-shirts, tops, pants, footwear, hats, and headwear. Video and handheld game consoles; plush toys; stress relief exercise toys; golf balls, tees, and markers; bean bag throwing toys, bean bag toy balls; puzzles; toy figures. Advertising services; computerized file management; providing business information; retail services in relation to cases for data storage devices; retail services in relation to computer hardware; retail services in relation to computer peripherals; retail services in relation to computer software; retail services in relation to portable media players; updating and maintenance of data in computer databases. Installation, maintenance and repair of computer hardware, computer peripherals, computer storage devices, computer networks, data storage centers, and media players; upgrading and updating of computer hardware and peripherals; office machines and equipment installation, maintenance and repair; consulting services in the field of physical maintenance of computer hardware, computer peripherals, computer storage devices, computer networks and data storage centers; technical support services, namely, trouble shooting in the nature of the repair of computer hardware; installation of computer systems; technical support services, namely, providing technical advice related to the installation of computer hardware and peripherals. Telecommunication services; electronic transmission of data and documents via computer networks; data transmission for others; computer data transmission services; digital transmission of data. Provision of online training; Organisation of webinars; Arranging and conducting of workshops and seminars; Provision of educational information; Providing electronic publications [not downloadable]; Publishing of newsletters; Publication of manuals; Providing on-line videos, not downloadable. Scientific and technological services; cloud computing; computer programming; computer software consultancy; data migration services; design and development of computer hardware; design and development of computer software; design, development and updating services of software for data hard disk drives, solid-state drives and computer storage devices; design, maintenance, development and updating of computer firmware and software; electronic data storage; electronic storage services for archiving databases, images and other electronic data; information technology [IT] consultancy; off-site data backup; providing information on computer technology and programming; providing technical advice relating to computer hardware and software; providing technical information in the fields of computer hardware, computer data storage, information storage, computer networking and networking interfaces, disk drives, computer disk drives, and electronic memories; recovery of computer data; research services; technical consultancy services relating to information technology; technical support services in the field of data storage, data management and backup of electronic data, on-premises and in the cloud; technical support services, namely, migration of datacenter, server and database applications; troubleshooting of computer software problems.
22.
Highly Textured 001 BiSb And Materials for Making Same
The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.
09 - Scientific and electric apparatus and instruments
42 - Scientific, technological and industrial services, research and design
Goods & Services
Downloadable and recorded computer software and mobile applications for aggregation of data and electronic media from distributed sources and datasets; downloadable and recorded computer software and mobile applications for the transmission and display of data and electronic media featuring collaboration and information sharing tools; downloadable and recorded computer software and mobile applications for the synchronization, back-up, and encryption and decryption of digital files; downloadable and recorded computer software and mobile applications for accessing media and data stored on distributed computer storage devices; downloadable and recorded computer software and mobile applications for encrypting data; downloadable and recorded computer software and mobile applications for managing data and data storage, for cloud-based network storage, and for use in accelerating the performance and scalability of computing platforms; none of the aforesaid relating to vehicles Providing non-downloadable computer software and mobile applications for aggregation of data and electronic media from distributed sources and datasets; Providing non-downloadable computer software and mobile applicationsfor the transmission and display of data and electronic media featuring collaboration and information sharing tools; Providing nondownloadable computer software and mobile applications for the synchronization, back-up, and encryption and decryption of digital files; Providing non-downloadable computer software and mobile applications for accessing media and data stored on distributed computer storage devices; Providing non-downloadable computer software and mobile applications for encrypting data; Providing nondownloadable computer software and mobile applications for managing data and data storage, for cloud-based network storage, and for use in accelerating the performance and scalability of computing platforms; none of the aforesaid relating to vehicles
24.
Topological Insulator Based Spin Torque Oscillator Reader
The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.
Methods of detecting molecules using an apparatus comprising a plurality of magnetic sensors are disclosed. A method may include binding a first molecule to a proximal wall of a fluid chamber of the apparatus, and adding, to the fluid chamber, a magnetically-labeled molecule comprising a cleavable magnetic label, wherein the magnetically-labeled molecule is configured to bind to or be incorporated by the first molecule. The method may use at least one address line and at least one selector element of the apparatus to detect a characteristic of at least a portion of the plurality of magnetic sensors, wherein the characteristic indicates whether the magnetically-labeled molecule has bound to or been incorporated by the first molecule.
G01N 27/08 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a liquid which is flowing continuously
G01N 27/74 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables of fluids
G01N 33/58 - Chemical analysis of biological material, e.g. blood, urineTesting involving biospecific ligand binding methodsImmunological testing involving labelled substances
26.
Doping Process To Refine Grain Size For Smoother BiSb Film Surface
The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
The present disclosure generally relates to a dual free layer (DFL) read head and methods of forming thereof. In one embodiment, a method of forming a DFL read head comprises depositing a DFL sensor, defining a stripe height of the DFL sensor, depositing a rear bias (RB) adjacent to the DFL sensor, defining a track width of the DFL sensor and the RB, and depositing synthetic antiferromagnetic (SAF) soft bias (SB) side shields adjacent to the DFL sensor. In another embodiment, a method of forming a DFL read head comprises depositing a DFL sensor, defining a track width of the DFL sensor, depositing SAF SB side shields adjacent to the DFL sensor, defining a stripe height of the DFL sensor and the SAF SB side shield, depositing a RB adjacent to the DFL sensor and the SAF SB side shield, and defining a track width of the RB.
Techniques are provided for optimizing the power consumption of a data storage device included in a battery-operated device. The battery-operated device (e.g., portable devices like wearable devices, smartwatches, and mobile phones) can access certain data stored on the data storage device more frequently when the device operates on battery power as compared to when the device does not operate on battery power. Techniques are provided for identifying and classifying data into different classifications, for example, power sensitive data and non-power sensitive data. Then the device can optimize the battery power consumption of the data storage device by storing or relocating data stored at the data storage device based on the classification of the data.
The present disclosure relates to pretreating a magnetic recording head assembly for magnetic media drive. The magnetic recording head assembly comprises a slider having a media facing surface (MFS), a top surface disposed opposite the MFS, a trailing edge surface disposed adjacent to the top surface, and an optical grating disposed on the trailing edge surface. A vertical cavity surface emitting laser (VCSEL) device is mounted to the trailing edge surface of the slider. The VCSEL device is aligned with the optical grating. A magnetic recording head comprising a waveguide and a near field transducer (NFT) coupled to the waveguide is disposed on the trailing edge surface of the slider. The VCSEL device is capable of emitting a plurality of lasers that are phase coherent on to the optical grating. The optical grating is capable of directing the emitted lasers about 90 degrees to the waveguide.
G11B 13/08 - Recording simultaneously or selectively by methods or means covered by different main groupsRecord carriers thereforReproducing simultaneously or selectively therefrom using near-field interactions or transducing means and at least one other method or means for recording or reproducing
G11B 5/48 - Disposition or mounting of heads relative to record carriers
G11B 5/00 - Recording by magnetisation or demagnetisation of a record carrierReproducing by magnetic meansRecord carriers therefor
30.
NEAR-FIELD TRANSDUCER FOR HEAT ASSISTED MAGNETIC RECORDING COMPRISING OF THERMALLY STABLE MATERIAL LAYER
The present disclosure generally relates to a magnetic recording head for a magnetic media drive. The magnetic recording head comprises a main pole, a waveguide disposed adjacent to the main pole, a near field transducer (NFT) coupled between the main pole and the waveguide at a media facing surface (MFS), a thermal shunt disposed on the NFT, the thermal shunt being recessed from the MFS, and a stable material disposed on the NFT at the MFS. In some embodiments, the stable material is wedge-shaped or triangular-shaped. In another embodiment, the stable material comprises a first portion and a second portion, where the first and second portions may each by linear, or where the first portion is triangular-shaped and the second portion is square-shaped. The stable material may be in contact with the thermal shunt, or spaced from the thermal shunt.
G11B 13/08 - Recording simultaneously or selectively by methods or means covered by different main groupsRecord carriers thereforReproducing simultaneously or selectively therefrom using near-field interactions or transducing means and at least one other method or means for recording or reproducing
A system for controlling a translocation speed of a molecule through a nanopore may include a fluid chamber containing a solution with a magnetic susceptibility that is different from the magnetic susceptibility of the molecule, a nanopore situated in the fluid chamber, and at least one magnetic component configured to create a magnetic field gradient within the solution to control the translocation speed of a molecule through the nanopore. A system for controlling a translocation speed of a molecule through a nanopore may include a nanopore at least one magnetic component situated to create a magnetic field that causes the molecule to experience a rotational torque as it passes through the nanopore.
A system for controlling a translocation speed of a molecule through a nanopore may include a fluid chamber containing a solution with a magnetic susceptibility that is different from the magnetic susceptibility of the molecule, a nanopore situated in the fluid chamber, and at least one magnetic component configured to create a magnetic field gradient within the solution to control the translocation speed of a molecule through the nanopore. A system for controlling a translocation speed of a molecule through a nanopore may include a nanopore at least one magnetic component situated to create a magnetic field that causes the molecule to experience a rotational torque as it passes through the nanopore.
Embodiments of the present technology provide non-volatile memory devices comprising memory dies that natively generate “exclusive OR (XOR) data pages” that can be used to recover data pages corrupted by UECC errors. Through memory die native-XOR data page generation, embodiments can recover data pages corrupted by UECC errors more efficiently, more rapidly, and with fewer resources than potential alternative technologies.
G06F 11/14 - Error detection or correction of the data by redundancy in operation, e.g. by using different operation sequences leading to the same result
The present disclosure generally relate to an integrated circuit utilizing spin orbital-spin orbital (SO-SO) logic. The integrated circuit comprises a plurality of SO-SO logic cells, where each SO-SO logic cell comprises a first spin orbit torque (SOT1 ) layer, a second spin orbit torque (SOT2) layer, and a ferromagnetic layer disposed between the SOT1 and SOT2 layer. Each SO-SO logic cell is configured for: a first current path that is in plane to a plane of the SOT1 layer, and a second current path that is perpendicular to a plane of the SOT2 layer, the second current path being configured to extend into the ferromagnetic layer. The integrated circuit further comprises a common voltage source connected to each SOT device, and one or more interconnects disposed between adjacent SOT devices of the plurality of SOT devices, the one or more interconnects connecting the adjacent SOT devices together.
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
35.
HIGHLY TEXTURED BUFFER LAYER TO GROW YBIPT (110) FOR SPINTRONIC APPLICATIONS
Spot size converter (SSC) in a HAMR magnetic recording head assembly have a plurality of split assist core structures. Each split assist core structure includes multiple assist cores and a main waveguide. Each split core may also include one or more side waveguides such that the main waveguide is sandwiched between the side waveguides and top and bottom assist cores. Adjacent split assist core structures, may share assist cores. The split assist core structures reduce light source power utilized to write data to magnetic media.
G11B 13/04 - Recording simultaneously or selectively by methods or means covered by different main groupsRecord carriers thereforReproducing simultaneously or selectively therefrom magnetically and optically
G11B 5/48 - Disposition or mounting of heads relative to record carriers
G11B 5/31 - Structure or manufacture of heads, e.g. inductive using thin film
37.
FILM AND METHOD FOR BISBX (012) TEXTURE FOR SOT DEVICES
The present disclosure generally relates to spin-orbit torque (SOT) device comprising a bismuth antimony (BiSb) layer. The SOT device comprises a seed layer and a BiSb layer having a (012) orientation. The seed layer comprises at least one of an amorphous/nanocrystalline material with a nearest neighbor x-ray diffraction peak with a d-spacing in the range of about 2.02 Å to about 2.20 Å; a polycrystalline material having a (111) orientation and an a-axis of about 3.53 Å to about 3.81 Å; and a polycrystalline material having a cubic (100) or tetragonal (001) orientation and an a-axis of about 4.1 Å to about 4.7 Å. When the seed layer comprises an amorphous material or a polycrystalline material having a (111), the BiSb layer is doped, and the seed layer has a lower a/c ratio than when the seed layer comprises polycrystalline material having a cubic (100) or tetragonal (001) orientation.
H10B 61/00 - Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
G11B 5/48 - Disposition or mounting of heads relative to record carriers
A server includes at least one local memory and communicates with one or more network devices that provide an external shared memory. A kernel space of the server is used to monitor memory usage by different applications executed by the server. A memory kernel module adjusts usage of the at least one local memory and the external shared memory by the different applications based at least in part on the monitored memory usage. In another aspect, a memory access profiling server receives memory information and application usage information added to packets sent between servers and one or more memory devices. The memory access profiling server analyzes the memory information and application usage information to determine memory placement information that is sent to at least one server to adjust usage of the external shared memory.
Embodiments of the disclosed technology relate to the operation of memory devices, and more particularly to sub-block mode (SBM) pre-charge operation sequences. One example embodiment provides a novel logic design of the control circuitry of a memory device using comments/instructions for the control circuitry. By virtue of the features of the disclosed technology, the control circuitry can effect pre-charging of an inner or middle vertical sub-block of a NAND string in a memory array. In some examples the NAND string has at least three vertical sub-blocks of non-volatile memory cells.
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, an array of memory openings vertically extending through the alternating stack, memory-opening-free areas located in the array of the memory openings in a plan view, an array of memory opening fill structures located in the array of memory openings, and layer contact assemblies located within the memory-opening-free areas in the plan view. Each of the memory opening fill structures includes a respective vertical semiconductor channel and respective memory elements located at levels of the electrically conductive layers. Each of the layer contact assemblies includes a respective layer contact via structure contacting a respective one of the electrically conductive layers, and a respective insulating spacer that laterally surrounds the respective layer contact via structure.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
41.
SHOCK ABSORBER ASSEMBLY FOR A PRINTED CIRCUIT BOARD
A shock absorber for a printed circuit board (PCB) includes a first portion and a second portion. The first portion is positioned on a first side of the PCB at or near a connector that extends from the PCB. The second portion is positioned on a second side of the PCB, opposite the first portion. The first and second portions prevent the PCB from moving when the PCB is coupled to a host device. As the PCB is subjected to various movements, strains and stresses, the shock absorber prevents the PCB from cracking or breaking, especially at or near the connector, which is susceptible to cracking and breaking.
A data storage device and method are provided for using a dynamic floating flash region to secure a firmware update. In one embodiment, a data storage device is provided comprising a first non-volatile memory, a second non-volatile memory, and a controller. The controller is configured to communicate with the first and second non-volatile memories and further configured to: determine addresses in the second non-volatile memory to store portions of a firmware update, wherein the addresses are determined on-the-fly as opposed to being predetermined; and store the portion of the firmware update in the addresses in the second non-volatile memory. Other embodiments are provided.
G06F 8/71 - Version control Configuration management
G06F 21/57 - Certifying or maintaining trusted computer platforms, e.g. secure boots or power-downs, version controls, system software checks, secure updates or assessing vulnerabilities
G06F 21/78 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data
G06F 21/62 - Protecting access to data via a platform, e.g. using keys or access control rules
G06F 13/42 - Bus transfer protocol, e.g. handshakeSynchronisation
A memory device includes an alternating stack of insulating layers and electrically conductive layers containing stepped surfaces in a contact region, a first stepped dielectric material portion overlying the stepped surfaces of the alternating stack, a memory opening vertically extending at least through each layer within the alternating stack, a memory opening fill structure located in the memory opening and containing a vertical stack of memory elements and a vertical semiconductor channel, and a bundled contact via structure vertically extending through the first stepped dielectric material portion and through a plurality of bottommost electrically conductive layers of the electrically conductive layers, and laterally contacting each of the plurality of the bottommost electrically conductive layers.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
A device carrier mechanism configured for attachment to an electronic device such as a hard disk drive includes a pair of rotatable handles interlocked at a common first pivot at a proximal end of each handle and a respective second pivot at a distal end, a pair of pin mechanisms each coupled at the second pivot of a respective handle and having a protruding latch pin, and a frame with which each pin mechanism is translatably coupled. Such a linkage system operates as an over-center mechanism, in a device handling state responsive to an upward handling force and with the latch pins in a retracted position within the frame, a neutral state with the latch pins in an extended position extending external to the frame, and a locked over-center state with the latch pins clamped in the extended position for locking into a data storage system.
A method of manufacturing hard disk drives (HDDs) includes assembling a first HDD including a first slider having a first air bearing surface (ABS) configuration, configuring the first HDD to rotate its disk media at a first revolutions-per-minute (RPM), and sealing the first HDD with a first internal pressure level. Continuing, the method includes assembling a second HDD including a second head slider having the same first ABS configuration, configuring the second HDD to rotate its disk media at a second RPM that is lower than the first RPM, and sealing the second HDD with a second internal pressure level that is higher than the first pressure level. Thus, in the context of using a common slider among different RPM drives, a higher internal pressure for the lower RPM drive can compensate for loss in fly height that might otherwise occur due to the lower operational RPM.
A semiconductor structure includes a logic die containing a word line switching circuit containing a fin field effect transistor having at least one semiconductor fin, and a planar field effect transistor, and a memory die containing a three-dimensional memory device bonded to the logic die.
H01L 23/528 - Layout of the interconnection structure
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 41/41 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/40 - EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
47.
CROSS-POINT MAGNETORESISTIVE MEMORY ARRAY CONTAINING CARBON-BASED LAYER AND METHOD OF MAKING THE SAME
A device structure includes first electrically conductive lines that are laterally spaced apart from each other, second electrically conductive lines that are vertically spaced apart from the first electrically conductive lines and are laterally spaced apart from each other, a two-dimensional array of magnetoresistive random access memory (MRAM) pillars located between the first electrically conductive lines and the second electrically conductive lines, and each of the MRAM pillars includes a respective reference layer, a respective nonmagnetic tunnel barrier layer, and a respective free layer, and a two-dimensional array of carbon-based layers contacting surfaces of the first electrically conductive lines and surfaces of the two-dimensional array of MRAM pillars.
A device carrier mechanism configured for attachment to an electronic device such as a hard disk drive includes a pair of rotatable handles interlocked at a common first pivot at a proximal end of each handle and a respective second pivot at a distal end, a pair of pin mechanisms each coupled at the second pivot of a respective handle and having a protruding latch pin, and a frame with which each pin mechanism is translatably coupled. Such a linkage system operates as an over-center mechanism, in a device handling state responsive to an upward handling force and with the latch pins in a retracted position within the frame, a neutral state with the latch pins in an extended position extending external to the frame, and a locked over-center state with the latch pins clamped in the extended position for locking into a data storage system.
A memory device includes layer stacks, each including a respective alternating stack of respective insulating layers and respective electrically conductive layers and a respective contact-level dielectric layer, memory openings vertically extending through a respective one of the alternating stacks. memory opening fill structures located in a respective one of the memory openings and including a respective vertical stack of memory elements and a respective vertical semiconductor channel, and dielectric bridges structures located within access trenches that laterally separate the layer stacks. Each of the dielectric bridge structures includes a respective pair of contoured sidewalls. Each contoured sidewall of the dielectric bridge structures includes at least two vertically-straight and horizontally-convex surface segments that are adjoined by a vertically-extending edge. Access trench fill structures are located in the access trenches and each access trench fill structure embed a respective subset of the dielectric bridge structures.
H01L 23/00 - Details of semiconductor or other solid state devices
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
50.
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING ION IMPLANTED ETCH STOP LAYER ON A SACRIFICIAL FILL MATERIAL
A method includes forming a first alternating stack of first insulating layers and first sacrificial material layers over a substrate, forming a first in-process inter-tier dielectric layer over the first alternating stack, forming a first memory opening through the first in-process inter-tier dielectric layer and the first alternating stack, forming a sacrificial memory opening fill structure in the first memory opening, doping an upper portion of the sacrificial memory opening fill structure with atoms of at least one dopant species, forming a second alternating stack of second insulating layers and second sacrificial material layers over the first alternating stack, forming a second memory opening through the second alternating stack by performing an anisotropic etch process, and removing the sacrificial memory opening fill structure.
H01L 23/528 - Layout of the interconnection structure
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
51.
THREE-DIMENSIONAL MEMORY DEVICE WITH THROUGH-STACK CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME
A memory device includes a first alternating stack of first insulating layers and first electrically conductive layers, a first dielectric material portion overlying first stepped surfaces of the first alternating stack, a memory opening vertically extending through the first alternating stack, a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a vertical stack of memory elements, and a first contact via structure vertically extending through the first alternating stack and the first dielectric material portion. The first contact via structure includes a conductive pillar portion and a conductive fin portion that laterally protrudes from the conductive pillar portion and having a first annular bottom surface segment contacting an annular top surface segment of one of the first electrically conductive layers.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
52.
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PERIPHERAL CIRCUIT WITH FIN FIELD EFFECT TRANSISTORS AND METHOD OF MAKING THE SAME
A semiconductor structure includes a memory die including a three-dimensional memory device, and a logic die bonded to the memory die. The logic die includes a word line switching circuit containing a fin field effect transistor including a semiconductor fin and a first gate dielectric having a first gate dielectric thickness, and further includes a first additional field effect transistor including a second gate dielectric having a second gate dielectric thickness that is different from the first gate dielectric thickness.
H10B 43/40 - EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/528 - Layout of the interconnection structure
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 41/41 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
53.
ASYMMETRIC VREADK TO REDUCE NEIGHBORING WORD LINE INTERFERENCE IN A MEMORY DEVICE
The memory device includes a memory block with a plurality of memory cells that are arranged in a plurality of word lines. The plurality of word lines include a selected word line, a pair of neighboring word lines that are immediately adjacent the selected word line, and a plurality of non-neighboring word lines that are not immediately adjacent the selected word line. Circuitry can perform a sensing operation on at least one memory cell in the selected word line. During the sensing operation, the circuitry is configured to apply a reference voltage to the selected word line, apply different first and second pass voltages to the neighboring word lines, and apply a third pass voltage that is different than the first and second pass voltages to the plurality of non-neighboring word lines. The circuitry is further configured to sense a threshold voltage of the at least one memory cell.
A storage device is communicatively coupled to a host that stores data on a primary memory package on the storage device. A controller on the storage device may monitor the temperature of components on the storage device and determine when the temperature exceeds a thermal temperature limit. When the temperature exceeds a thermal temperature limit, the controller may suspend certain operations on the primary memory package and write host data to the secondary memory package on the storage device. The controller may continue to monitor the temperature on the storage device, determine when the temperature on the storage device returns to an acceptable level, transfer data from the secondary memory package to the primary memory package, and resume writing host data to primary memory package.
Performance on a storage device may be improved when executing a write command with sequential host data. The storage device optimizes logical-to-physical table updates for fixed granularity logical-to-physical tables that are populated when writing the sequential host data. A host interface module on the storage device may receive, from a host, a command to store the host data on a memory device and classify the host data as sequential host data or random host data. A flash translation layer on the storage device predetermines open contiguous blocks on the memory device where the sequential host data is to be written and provides a beginning address of the open contiguous blocks to the host interface module. The host interface module populates an address translation table with logical-to-physical mappings starting at the beginning address with an appropriate offset. Each entry in the address translation table corresponds to a fixed granularity.
Detecting the removal of a data storage device from a storage system involves first determining that a shorter pin of an electrical connector of a storage device is disconnected from a mating electrical connector, such as by sensing a voltage drop on that pin, then determining at a later time that a longer pin of the connector is disconnected from the mating connector. Responsive to determining that the longer pin was disconnected after a predetermined period of time after the shorter pin, a conclusion may be made that the storage device has been removed from the system as opposed to being subject to a simple device power aberration. Thus, responsive data destruction action(s) may be taken to render the data stored on the device inaccessible to the attacker thereby protecting the device even after the device is removed from the storage system.
A system and method are disclosed for flexible emergency power fail management for multiple persistent memory regions. In one embodiment, a method is provided that is performed in a host in communication with a plurality of data storage devices, each data storage device having a persistent memory region, wherein the host comprises a capacitor shared by the plurality of data storage devices. The method comprises determining an allocation of power from the capacitor to each of the plurality of data storage devices; and dynamically changing the allocation of power from the capacitor to at least one data storage device of the plurality of data storage devices. Other embodiments are disclosed.
A data storage device includes a non-volatile memory device, a capacitor bank, and a power regulator electrically coupled to the capacitor bank and configured to provide power to the non-volatile memory device. The data storage device further includes a controller configured to discharge the capacitor bank from a first voltage to a second voltage at a first constant current and determine a first discharge time. controller is further configured to discharge the capacitor bank from the first voltage to the second voltage at a second constant current and determine a second discharge time. A voltage holdup time of the capacitor bank is then determined based on at least the first discharge time and the second discharge time.
There is a tradeoff between the amount of power consumption decreased and the latency needed to return a data storage device back to an operational power mode. When the data storage device receives a wake up indication from a host device, a controller of the data storage device initiates a counter in order to determine a host exit latency. Based on the host exit latency, the controller determines a group of low power state entrance actions from a plurality of groups to perform during a next entrance into a firmware active idle state based on an associated completion wake up time and the host exit latency. The controller selects the group whose completion wake up time is closest to the host exit latency and less than or equal to the host exit latency. The controller performs the selected groups low power state entrance actions during a next entrance into the firmware active idle state.
A storage device is communicatively coupled to a host that defines a quality of service level for responses transmitted from the storage device to the host. The storage device includes a memory device to store data. The storage device also includes a controller to perform background operations to manage resources on the memory device while performing foreground operations according to the quality of service level set by the host. The controller generates a free block file including information on free blocks in the memory device and transmits the free block file to the host. The host uses the free block file to determine when the memory device is at or near a critical level of block availability and transmits an indication from to the controller. The controller adjusts the priority of the background operations in response to receipt of the indication to maintain the quality of service level.
A non-volatile memory system is configured to perform a multiplane erase process that concurrently erases groups of memory cells in multiple planes. Based on that multiplane erase process, the memory system determines that a first group of memory cells in a first plane of the multiple planes is slow to erase. As a result, the system will perform one or more multiplane erase processes for the groups of memory cells in multiple planes without erasing the first group of memory cells in the first plane as part of the multiplane erase process(es).
A data storage device and method for host-assisted efficient handling of multiple versions of data are provided. In one embodiment, a data storage device is provided comprising a memory and a controller. The controller is configured to receive, from a host, identification of different versions of data that are to deleted together; store the different versions of the data in areas of the memory that are erasable in parallel; receive, from the host, a command to erase the different versions of the data; and erase the different versions of the data in parallel. Other embodiments are provided.
A data storage device and method for enhanced recovery through data storage device discrete-component-hardware-reset are provided. In one embodiment, the data storage device determines that a subset of a plurality of memory dies is non-responsive, sends a request to a host to accept longer delays associated with the subset of the plurality of memory dies, power-cycles the subset of the plurality of memory dies, and then informs the host that the latency associated with those dies has been restored to normal latency or that the subset of the plurality of memory dies are inactive (in case of unsuccessful recovery). Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
The present disclosure generally relates improved key-per IO (KIPO) processing for multiple tenants. Rather than when a tenant requests a key change to stop tenants from working, indirect-double-indexing can be used to prevent bandwidth loss in tenants during adaptions for other tenants. When a tenant requests to manipulate the key-index table, the system will keep working. The current key index list will be duplicated. While the duplicated key-index list is manipulated according to the request, all tenants may still work on their current key-index tables until the request is complete. Once the request is complete, the tenant with the request will switch to the new table, while the old table is updated. Once the old table is updated, the tenant will switch to the updated table for continued work. No tenant, including the tenant that makes the request, continues working as the request is completed.
A data storage device and method for host-assisted deferred defragmentation and system handling are provided. In one embodiment, the data storage device comprises a memory and a controller. The controller is configured to receive, from a host, a plurality of write commands and a grouping identifier associated with the plurality of write commands, wherein the plurality of write commands comprise a plurality of non-sequential logical block addresses and a plurality of sequential segments of a file; and in response to the grouping identifier being associated with the plurality of write commands, execute the plurality of write commands by storing the plurality of sequential segments of the file sequentially in the memory even though the logical block addresses associated with the segments of the file are non-sequential. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
Methods are provided for managing defects in Hard Disk Drive (HDD) storage devices. In particular, only a portion of the cylinders of an HDD is tested. Machine learning modeling is used to reconstruct the data for the untested cylinders. An HDD comprises a rotating disk and a read/write head actuated above the disk surface. The disk may be formatted into concentric data tracks, with each track being divided into sectors. The tracks may be organized into zones (groups of tracks called cylinders), and the axially parallel sectors in each cylinder may be organized into wedges. In a test mode, some portion of the cylinders is chosen for testing. Each wedge in the chosen cylinders is tested and labeled defective or non-defective. The test data for each defective wedge is run through a machine learning defect management logic, and inferences are made for the defective/non-defective status of the untested wedges.
G11B 19/04 - Arrangements for preventing, inhibiting, or warning against, double recording on the same blank, or against other recording or reproducing malfunctions
G11B 5/596 - Disposition or mounting of heads relative to record carriers with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following on disks
68.
MACHINE LEARNING DEFECT MANAGEMENT IN STORAGE DEVICES
Methods are provided for managing defects in Hard Disk Drive (HDD) storage devices. In particular, only a portion of the cylinders of an HDD is tested. A bag of machine learning models is used to reconstruct the data for the untested cylinders. A defect file for the HDD is generated, a classifier model may be applied to the defect file, and one or more neural network models may be applied. If the defects are unsuitable for use by the models, then a scan of the entire HDD is run instead. An HDD comprises a rotating disk and a read/write head actuated above the disk surface. The disk may be formatted into concentric data tracks, with each track being divided into sectors. The tracks may be organized into zones (groups of tracks called cylinders), and the axially parallel sectors in each cylinder may be organized into wedges.
The present disclosure generally relates to improved wait time notifications from SSDs to host systems. Rather than assuming on when to restart an SSD after an asynchronous event notification (AEN) is sent, issuing a cool-off wait time. When an SSD is overheating, an AEN is sent from the SSD. An AEN may either be a warning event or a critical event. Once the AEN is received, a host may issue a banner with a cool-off wait time. The cool-off wait time is a predetermined time that will begin if the SSD is not detected by host systems. A non-detectable SSD means that the SSD is in a thermal shut down mode, which is initiated by a PMIC. In the thermal shut down mode, the cool-off wait timer will begin at host side. After the time has elapsed the SSD can then be restarted either manually by user or automatically by host.
An AON module on a storage device periodically obtains the temperatures of the storage device and memory device. A controller uses the temperatures obtained by the AON module to determine a calculated temperature. The controller determines when the calculated temperature is above a thermal threshold and causes the storage device to enter the thermal sleep state where normal operations on the storage device are suspended. In the thermal sleep state, power to the AON module is maintained and the power to other components is modified. The AON module starts a cool-off timer and after a cool-off time expires, the AON module causes power to at least one component on the storage device to be turned on to determine whether the temperature of the storage device is below a first thermal throttling threshold and to cause the storage device to resume normal operations.
A data storage device and method for race-based data access in a multiple host memory buffer system are provided. In one embodiment, the data storage device stores data in a plurality of host memory buffers in the host instead of in just the host memory buffer usually associated with the data. To read the data, the data storage device sends read commands to all of the host memory buffers. That way, even if some of the host memory buffers are busy, the data can be returned from another one of the host memory buffers. In future reads in similar workloads, a read command can be sent to the host memory buffer that returned the data. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
G11B 5/725 - Protective coatings, e.g. anti-static containing a lubricant
G11B 5/71 - Record carriers characterised by the selection of the material comprising one or more layers of magnetisable particles homogeneously mixed with a bonding agent on a base layer characterised by the lubricant
G11B 5/48 - Disposition or mounting of heads relative to record carriers
A data storage device and method for dynamic controller memory buffer allocation are disclosed. In one embodiment, a data storage device is provided comprising a memory and a controller with a controller memory buffer. The controller is configured to communicate with the non-volatile memory and is further configured to configure a size of the controller memory buffer; receive a request from the host to modify the size of the controller memory buffer during operation of the data storage device; and determine whether to grant the request to modify the size of the controller memory buffer. Other embodiments are possible, and each of the embodiments can be used alone or together in combination.
The present disclosure generally relates to achieving an acceptable uncorrectable bit error rate (UBER) using a dual temporary data protecting approach and a small SLC cache by adding a temporary XOR protection to zone-groups rather than storing another copy of the zone within the drive. The parity data can be stored with the user data (e.g., as part of the zone-group, effectively increasing zone-group size by 1) or in a separate location, e.g., in an SLC block or another separate MLC block.
Systems and methods are disclosed for providing multi-channel capacitive sensors for detecting user gestures. In certain embodiments, a data storage device includes a non-volatile memory; a plurality of metal pieces configured to form one or more heat sinks of the data storage device and to form a plurality of capacitive pads of a capacitive sensor configured to detect a user gesture; and a controller configured to: detect a gesture of a user in proximity of the plurality of capacitive pads using the capacitive sensor; and perform a command associated with the data storage device based on the detected gesture.
A non-volatile memory system reduces the number of bits of data per non-volatile memory cell for a block (or other grouping of non-volatile memory cells) in response to a failed memory operation, the block being subjected to more than a minimum number of programming cycles or other events. The reducing of the number of bits of data stored in the memory cells allows the useful life of the block to be extended.
This disclosure a smart card device that provides a bus interface, such as a USB-C bus interface, printed on a portion of a PCB that forms a base layer of the smart card device. The smart card device can provide the bus interface without having to mount a traditional socket. By leveraging the portion of the PCB to provide a printed bus interface and excluding the traditional socket, the bus interface can be easily manufactured using well-known PCB manufacturing techniques while significantly reducing manufacturing costs. Furthermore, the smart card device can have a thickness that conforms to known card form factor standards, enabling the smart device to fit within a standard wallet. To enhance durability of the portion of the PCB from wear-and-tear, a metal core can be added to the PCB as an additional layer. The portion may also be reinforced with edge plating.
Aspects are provided for optimizing game loading and rendering using an RMB dedicated for predicted host data that is accessible to a host and to a controller of a storage device. The controller obtains a bitmap indicating a status of a buffer in the RMB, receives from the host a read command indicating a logical address, predicts and reads from an NVM host data associated with a predicted logical address that is subsequent to the logical address, and loads the host data in the buffer in the RMB if the buffer is free. Subsequent read commands indicating the predicted logical address may lack PRP addresses in response to the host data being loaded in the RMB, while completion queue elements in response to such commands may include PRP addresses in the RMB where the host data is stored. Thus, command creation and completion overhead may be reduced using the RMB.
A process of assembling a voice coil motor (VCM), such as for a hard disk drive, includes creating an opening in a yoke, attaching a primary magnet to an inside surface of the yoke, installing through the opening in the yoke a cross-flux magnet into a channel of the primary magnet, and installing a plug into the opening in the yoke. Thus, part count is minimized and the manufacturing process is readily incorporated into existing VCM manufacturing processes.
A semiconductor device includes semiconductor dies formed with through silicon vias (TSVs). The TSVs are coupled to contact pads in a surface of the semiconductor die by coils forming inductance loops at a number of contact pads. These inductance loops serve to distribute the capacitance at each bond pad along transmission lines, which distribution of the capacitance allows for a marked increase in read/write bandwidth for the semiconductor die.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/528 - Layout of the interconnection structure
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Devices and methods to implement semantic searching on SSD through a computational SSD system that distributes computing to each NAND flash die of the SSD while the SSD controller handles the results aggregation with new on-die computation logic circuits to provide on device file semantic search are disclosed herein. The computational SSD system can read file feature vectors from multiple dies to the SSD controller, and if needed, these feature vectors may be buffered in DRAM and controller handles distance computing. Local, on-die AI/ML processing units may perform, for example, computation and comparison operations and pass the processing scores and results to the SSD controller. The SSD controller aggregates results from all dies and returns the result to the host. The feature vector store size, circuitry and number of on-die AI/ML processing units may be configured as needed to adapt to different tasks, system constraints, and/or feature vector sizes.
A data storage device includes a memory device and a controller coupled to the memory device. When a command is received by the controller from a host device, the controller determines whether the command size is greater than a threshold size. If the command is not greater than the threshold size, the command is sent to a first queue, otherwise, the command is sent to a second queue. Commands are executed from the first queue until a command size tracker value, which increases by a size representative of each command executed from the first queue, equals or exceeds a threshold value. When the command size tracker value equals or exceeds the threshold value, a command from the second queue is executed and the command size tracker value decreases by a size representative of the command from the second queue. Completion messages are sent at specific intervals based on the executing.
A storage device includes a memory die and a controller. The controller identifies a dirty block that was subject to an interrupted I/O operation and performs a coarse inspection of the dirty block. Each iteration of the coarse inspection includes: requesting first bytes of a current page of the dirty block; receiving contents of the first bytes from the at least one memory die; and evaluating a state of the current page based on the contents of the first bytes. The controller also determines an initial last good page based on the coarse inspection and performs a fine inspection of at least one page based on a second number of bytes greater than the first number of bytes. The fine inspection validates the initial last good page and identifies the initial last good page as an actual last good page of the dirty block.
Methods and apparatus for efficiently handling large data files and their updates in NAND memory. In one example, provided is a data-storage system configured to reduce the frequency of data relocations by segregating a large data file into a plurality of subfiles. The size of such subfiles is appropriately selected to reduce the probability of occurrence for host-relocation conflicts and the magnitude of write amplification, thereby enabling the data-storage system to provide better quality of service while substantially maintaining acceptable levels of other pertinent performance characteristics. In some examples, a sequence of host read-modify-write commands is handled by generating a copy of implicated subfiles in a data buffer, applying subfile updates to the copy in the data buffer in accordance with the sequence, and relocating the implicated subfiles in the NAND memory using the updated versions thereof from the data buffer.
Disclosed herein are devices, systems, and methods that can improve the SNR of nanopore measurements by mitigating the effect of parasitic capacitance between the sense electrode and the counter electrode. In some embodiments, a feedback circuit is used to inject a charge into the sense electrode to at least partially cancel the parasitic capacitance between the sense electrode and the counter electrode. In some embodiments, bootstrapping of a signal from the amplifier output or from the sense electrode is used to inject a charge on the counter electrode to substantially cancel the parasitic capacitance.
G01N 27/22 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
A media playback device is configured to control access to a plurality of files. The media playback device includes memory configured to store a plurality of files, the plurality of files including at least a first set of files and a second set of files, the second set of files having a higher security level the first set of files. The media playback device also includes control circuitry that can be configured to receive a first login from a user, determine that the first login is associated with a user profile associated with the first set of files and the second set of files, provide access to the first set of files in response to validating the first login while keeping the second set of files locked, receive a second login, and provide access to the second set of files in response to validating the second login.
A semiconductor device package includes a first substrate and receiving ports electrically connected to the first substrate. First semiconductor dies are electrically connected to and mounted directly on the first substrate. A second substrate is electrically connected to the first substrate via a corresponding receiving port and is oriented generally perpendicular to the first substrate. Second semiconductor dies are electrically connected to and mounted directly on the second substrate. A housing substantially encloses each of the above mentioned components. The receiving ports allow for additional substrates carrying semiconductor memory dies to be connected to the first substrate thereby increasing the total storage capacity of the semiconductor device package while conforming to a predefined form factor.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 23/04 - ContainersSeals characterised by the shape
H01L 23/42 - Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling
H01L 23/32 - Holders for supporting the complete device in operation, i.e. detachable fixtures
Technology for a memory device having memory dies flip-chip bonded to one or more interposers that are mounted to a system board is disclosed. The memory device may be an SSD and the system board may be an M.2 board. A memory controller die may be bonded to one of the interposer boards. In one aspect, the memory controller die is flip-chip bonded to the interposer board. In one aspect, a heat sink is attached to a top surface of the flip-chip bonded controller die and to top surfaces of a group of the memory dies. Neither the memory dies nor the interposers are covered with a mold compound. Performance of the memory device is improved by, for example, lower inductance and improved heat dissipation.
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H01L 23/367 - Cooling facilitated by shape of device
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
89.
DATA STORAGE DEVICE AND METHOD FOR SWAP DEFRAGMENTATION
A data storage device stores files in its memory. The files may be logically fragmented in that various parts of a given file may be located in non-continuous logical addresses, which can be disadvantageous. The host can send a request to the data storage device to reduce such logical fragmentation. For example, the host can send a swap command to the data storage device, in response to which the data storage device swaps the logical addresses of data fragments of two different files. This results in the logical address of one or both of the data fragments being continuous with the logical address of another data fragment of the same file. This logical address swap can take place without physically moving the data in the memory.
Various illustrative aspects are directed to a data storage device, comprising one or more disks; an actuator mechanism configured to position a selected head among one or more heads proximate to a corresponding disk surface among the one or more disks; and one or more processing devices. The one or more processing devices are configured to generate a map of laser mode hop effects across the corresponding disk surface, for the selected head. The one or more processing devices are further configured to apply a laser mode hop mitigation in operating the selected head, based on the map of laser mode hop effects.
G11B 7/1263 - Power control during transducing, e.g. by monitoring
G11B 5/588 - Disposition or mounting of heads relative to record carriers with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following on tapes by controlling the position of the rotating heads
A data storage device includes a memory device and a controller coupled to the memory device. When data received by the controller, from a host device or from a non-volatile memory of the data storage device, the controller maintains table tracking the location of the data. The table may include a current location of the data in a volatile memory of the controller or the data storage device as well as the current location of the data a latch of the non-volatile memory. The table may further associate the location with a logical block address, such that when the host device requests the data not yet programmed to the non-volatile memory or data that is part of a data relocation operation, the controller may utilize the table to locate the relevant data and provide the data to the host device.
A client device encodes one or more input datasets of real numbers into a plaintext polynomial with integral coefficients that do not include an imaginary component and generates an input ciphertext by encrypting the plaintext polynomial according to a Fully Homomorphic Encryption (FHE) scheme. The input ciphertext includes at least encrypted coefficients of an input polynomial. A server receives the input ciphertext and performs a convolution on the input ciphertext using a kernel by at least in part separately multiplying the input polynomial by one or more kernel polynomials to result in one or more corresponding convolved polynomials. The one or more kernel polynomials include kernel coefficients encoded using kernel values for the kernel. At least a plurality of coefficients is used from each of the one or more convolved polynomials to derive an output ciphertext representing an output of the convolution on the input ciphertext using the kernel.
H04L 9/00 - Arrangements for secret or secure communicationsNetwork security protocols
H04L 9/06 - Arrangements for secret or secure communicationsNetwork security protocols the encryption apparatus using shift registers or memories for blockwise coding, e.g. D.E.S. systems
H04L 9/30 - Public key, i.e. encryption algorithm being computationally infeasible to invert and users' encryption keys not requiring secrecy
93.
HEAT-ASSISTED MAGNETIC RECORDING (HAMR) HEAD WITH MAIN POLE HAVING NARROW POLE TIP WITH PLASMONIC LAYER
A heat-assisted magnetic recording (HAMR) head has a slider with a gas-bearing-surface (GBS). The slider supports a near-field transducer (NFT) with an output tip at the GBS and a main magnetic pole with a pole tip at the GBS. The pole tip has a narrow cross-track width that can be substantially the same as the cross-track width of the NFT output tip. A plasmonic layer is located between the main pole and the NFT and has a tip at the GBS between the main pole tip and the NFT output tip. The plasmonic layer may also be located on the cross-track sides of the main pole and the main pole tip.
A data storage device may include one or more disks, an actuator arm assembly comprising one or more disk heads, at least one laser diode positioned inside a corresponding laser diode cavity, a preamplifier, and one or more processing devices. The one or more processing devices are configured to: generate a reverse bias; apply, using the preamplifier, the reverse bias to the at least one laser diode to preheat a corresponding laser diode cavity to a target temperature prior to a write operation; control transition of the preamplifier from applying the reverse bias to applying a forward bias to the at least one laser diode; and activate the at least one laser diode to begin the write operation.
Rather than waiting on a squelch to detect the difference in the state from steady to floating, this disclosure suggests using the time from when a reference clock is turned on to begin the process to exit the hibernation state. The reference clock is turned off while a data storage device is in the hibernation state to save power. Once the host is ready for the device to exit the hibernation state, the reference clock is turned on. The reference clock is monitored for the change. Once the reference clock is on, the data storage device returns to a steady state. In the ready state, the data storage device has a shortened ready time. Once the ready time is complete, the data storage device may now exit the hibernation state without waiting on squelch detection or a hibernation exit request from the host.
Aspects of a storage device are provided including zone-based GC in a ZNS. The storage device includes a NVM and a controller. The NVM includes first blocks, second blocks, and third blocks. The controller creates a first superblock including the first blocks, a second superblock including the second blocks, and a third superblock including the third blocks. The controller allocates a first sub-drive including the first superblock for storing data overwrites and a second sub-drive including the second and third superblocks for storing sequential data in the NVM. During GC for superblocks respectively including data for a specific zone, the controller relocates written data for this zone from the first and third superblocks to the second superblock while refraining from relocating data associated with other zones from the first superblock to the second superblock. As a result, storage device cost, overprovisioning, and WAF may be reduced.
The present disclosure generally relates to read and write operations utilizing barrier commands. Using barrier commands and a snapshot of doorbell states of submission queues (SQs), the necessary write commands to perform a read may be identified and executed to reduce any wait time of the host. As such, host delays during reads and writes are reduced. In absence of a barrier command, the host needs to wait for writes to complete before performing a read. When a barrier command is used, the host needs to wait for the barrier command to complete before performing a read. The controller will execute the post barrier reads only after completing the pre-barrier writes. As will be discussed herein, the controller completes the barrier command as soon as a doorbell snapshot is taken even though the pre-barrier writes may not yet be completed.
The present disclosure generally relates to improved optimization of a cache lookup operation by structuring the write cache buffers differently using a link-list. Rather than executing a read command first and then executing a write command only after the read command is executed, this disclosure suggests reordering the command executions. A device waits before executing the read command giving the opportunity to obtain the overlap write command. The device then reorders the command execution and executes first the write command and then executes the read command by accessing the write cache instead of the NAND. When two write commands need to be executed consecutively, the link-list operation is used. The controller finds the relevant buffer in the cache that is needed and overwrites the buffer with the new data. The new data is then written to the cache without accessing the cache multiple times.
A storage system has an inference engine that can infer a read threshold based on a plurality of parameters of the memory. The read threshold can be used in reading a wordline in the memory during a regular read operation or as part of an error handling process. Using a machine-learning-based approach to infer a read threshold can provide significant improvement in read threshold accuracy, which can reduce bit error rate and improve latency, throughput, power consumption, and quality of service. In another embodiment, a circuit-bounded array is used to manage updates to time and temperature tag information and to infer read thresholds.
Disclosed herein are systems for detecting molecules. In some embodiments, a system includes a multiplexer, a read amplifier coupled to the multiplexer, a digitizer coupled to the read amplifier, a first nanopore, a first sense electrode situated on a first side of the first nanopore, a first counter electrode situated on a second side of the first nanopore, a first shield at least partially surrounding the first sense electrode and coupled to the multiplexer, a first shield driver coupled to the first shield, drive circuitry coupled to the first sense electrode, and control logic coupled to the drive circuitry, the multiplexer, and to the digitizer. In some embodiments, the control logic is configured to control the drive circuitry and/or the multiplexer to select the first sense electrode and/or the first counter electrode, and obtain a digitized signal from the digitizer, the digitized signal representing a current through the first nanopore.
G01N 27/22 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
G01N 33/487 - Physical analysis of biological material of liquid biological material
H03F 3/04 - Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
