A semiconductor processing apparatus is provided. The apparatus includes a body portion, which includes at least one semiconductor processing unit. Each semiconductor processing unit includes a recess formed on an upper surface of the body portion, wherein a bottom surface of the recess has at least one location and a peripheral. The bottom surface ascends from the at least one location toward the peripheral against a direction of gravity or descends from the at least one location toward the peripheral following the direction of gravity. Each semiconductor processing unit also includes a first channel that connects to the recess at the at least one location, as well as at least one second channel connecting to the recess at the peripheral. Each of the first channel and the at least one second channel serves as an inlet or an outlet via which a fluid enters or exits the recess. A method according to the present disclosure may control a flowing direction of a fluid flowing across a substrate surface. When the fluid flow as programmed, the fluid may contact the substrate surface and process the surface via various physical and/or chemical reactions.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/66 - Testing or measuring during manufacture or treatment
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
The present disclosure provides a chemical container and a method for manufacturing the same. The chemical container comprises a head portion having a top wall and a head sidewall extending from an edge of the top wall, as well as a body portion jointed with the head portion and defining a chamber together with the head portion. The top wall has a mouth structure configured for one or more pipelines to pass through and connect with the chamber. The manufacturing method is simple and of low cost, and the resulted chemical container is able to withstand a greater internal pressure and is configured to collect any leaking liquid chemicals.
B65D 8/02 - Arrangements of filling or discharging apertures
B29C 45/00 - Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mouldApparatus therefor
B65D 6/34 - Reinforcing or strengthening parts or members
B29C 65/02 - Joining of preformed partsApparatus therefor by heating, with or without pressure
B65D 8/00 - Containers having a curved cross-section formed by interconnecting or uniting two or more rigid, or substantially rigid, components made wholly or mainly of metal, plastics, wood or substitutes therefor
B29C 65/00 - Joining of preformed partsApparatus therefor
B65D 1/16 - Cans, casks, barrels, or drums characterised by shape of curved cross-section, e.g. cylindrical
B65D 1/20 - Cans, casks, barrels, or drums characterised by location or arrangement of filling or discharge apertures
B29K 23/00 - Use of polyalkenes as moulding material
B65D 6/00 - Containers having bodies formed by interconnecting or uniting two or more rigid, or substantially rigid, components made wholly or mainly of metal, plastics, wood or substitutes therefor
A semiconductor processing apparatus is provided. The apparatus includes a body portion, which includes at least one semiconductor processing unit that has a recess formed on an upper surface of the body portion, wherein a bottom surface of the recess has at least one location and a peripheral. The bottom surface ascends from the at least one location toward the peripheral against a direction of gravity or descends from the at least one location toward the peripheral following the direction of gravity. Each semiconductor processing unit also includes a first channel that connects to the recess at the at least one location, and at least one second channel connecting to the recess at the peripheral. Each of the first and second channels serves as an inlet or an outlet via which a fluid enters or exits the recess.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
A semiconductor processing apparatus is provided. The apparatus includes a first chamber portion and a second chamber portion movable relative to the first chamber portion between an open position and a closed position. The first chamber portion includes a recessed area formed on an internal surface of the first chamber portion. The first chamber portion also includes one or more through-holes connected to respective locations of the recessed area. When the second chamber portion is in the closed position and a semiconductor wafer is housed in the micro chamber, the recessed area is sealed by a surface of the semiconductor wafer to form a closed channel. The surface may be processed by a processing fluid flowing in the closed channel. Accordingly, a flowing direction and a flowing speed of the processing fluid may be accurately controlled, and an amount of the processing fluid consumed may be greatly reduced.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
5.
Apparatus and method for processing semiconductor wafer surface with ozone-containing fluid
An apparatus and a method for processing one or more surfaces of a semiconductor wafer with one or more ozone-containing fluids are provided. The apparatus includes an ozone generator, a solvent flask, a gas-liquid mixing device, and a processing chamber capable of receiving the semiconductor wafer. The apparatus may also include one or more gas-liquid separation devices and switching valves. The processing chamber allows the ozone-containing fluids to enter the processing chamber for treating the wafer surface. The effectiveness of the treatment is ensured by enhancing the ozone concentration of the ozone-containing fluids inside the processing chamber, in either or both gas and liquid phases. The employment of a micro chamber as the processing chamber also helps to reduce the consumption of the treatment gas and liquid, as well as the resulted waste emission.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
B08B 3/14 - Removing waste, e.g. labels, from cleaning liquid
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A semiconductor processing device, comprising: a first cavity chamber portion (110) and a second cavity chamber portion (120) capable of moving between an open position and a closed position with respect to the first cavity chamber portion (100). The first cavity chamber portion (110) has a groove channel (124) formed from a surface thereof to a recess of an inner wall surface (123) of a micro-cavity chamber, a first through-hole (125) communicating with a first position of the groove channel (124) and a second through-hole (126) communicating with a second position of the groove channel (124). When the second cavity chamber portion (120) is in the closed position relative to the first cavity chamber portion (110) and a semiconductor wafer (200) to be processed is accommodated in the micro-cavity chamber, a surface of the semiconductor wafer (200) abuts the inner wall surface (123) of the formed groove channel (124). At this time, the groove channel (124) utilizes blocking of the surface of the semiconductor wafer (200) to form a sealed channel, and the sealed channel is connected to the outside via the first through-hole (125) and the second through-hole (126). Thus, processing fluid flow direction and flow speed can be precisely controlled, greatly saving processing fluid.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
7.
Chemical container and method for manufacturing the same
The present disclosure provides a chemical container and a method for manufacturing the same. The chemical container comprises a head portion having a top wall and a head sidewall extending from an edge of the top wall, as well as a body portion jointed with the head portion and defining a chamber together with the head portion. The top wall has a mouth structure configured for one or more pipelines to pass through and connect with the chamber. The manufacturing method is simple and of low cost, and the resulted chemical container is able to withstand a greater internal pressure and is configured to collect any leaking liquid chemicals.
B65D 8/02 - Arrangements of filling or discharging apertures
B65D 6/00 - Containers having bodies formed by interconnecting or uniting two or more rigid, or substantially rigid, components made wholly or mainly of metal, plastics, wood or substitutes therefor
B29C 45/00 - Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mouldApparatus therefor
B65D 6/34 - Reinforcing or strengthening parts or members
B65D 1/20 - Cans, casks, barrels, or drums characterised by location or arrangement of filling or discharge apertures
B65D 1/16 - Cans, casks, barrels, or drums characterised by shape of curved cross-section, e.g. cylindrical
Provided are a device and method for processing a semiconductor wafer surface utilizing a fluid containing ozone. The device comprises an ozone generator (11), a solvent bottle (12), a gas mixing device (13), a sealed cavity (14), a gas delivery system and a gas discharge system; the ozone generator (11) and the solvent bottle (12) respectively use a microprocessing cavity as a sealed cavity corresponding to the gas mixing device (13); and the microprocessing cavity comprises an upper cavity portion and a lower cavity portion cooperating with each other. By inputting a gas-liquid mixing fluid containing ozone or a solution containing ozone and the ozone gas into a sealed cavity, and by improving the partial pressure of the ozone in the gas phase, the time from the ozone being generated to being used is shortened, thus ensuring the concentration of the ozone in a solution, thereby improving a processing effect of a fluid containing the ozone on a wafer surface placed in the sealed cavity; meanwhile, by means of a microprocessing cavity design, the consumption of the used gas and liquid is reduced, and the emission thereof is reduced.
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/301 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to subdivide a semiconductor body into separate parts, e.g. making partitions
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
9.
CHEMICAL LIQUID STORAGE BOTTLE AND PREPARATION METHOD THEREFOR
Provided is a chemical liquid storage bottle and a preparation method therefor. The chemical liquid storage bottle comprises a bottle end opening portion (200) comprising a top wall (210) and an end opening side wall (220) extending from the edge of the top wall (210), and a bottle body portion which is combined together with the bottle end opening portion (200), wherein the bottle end opening portion (200) and the bottle body portion collectively form an accommodation cavity (500), and the top wall (210) is provided with bottle mouths which are used for conveying pipelines to pass through and are in communication with the accommodation cavity (500). The chemical liquid storage bottle has the advantages of easy manufacture, a lower cost, an ability of bearing a greater inner pressure and/or collecting a leakage liquid etc.
Disclosed is an adjustable semiconductor processing apparatus and a control method thereof. The apparatus comprises a micro chamber with an upper chamber portion defining an upper working surface and a lower chamber portion defining a lower working surface that are relatively moveable towards each other between an open position and a closed position. When the chamber is in the closed position, a cavity formed by the upper working surface and the lower working surface defines a gap between the upper working surface, the lower working surface and a semiconductor wafer received in the cavity for flow of a processing fluid. A drive device enables the upper working surface of the upper chamber portion or/and the lower working surface of the lower chamber portion to tilt or deform to control flow of chemical agents within the micro chamber.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
The present disclosure provides a multi-chamber semiconductor processing apparatus including at least two micro chambers for receiving and processing a semiconductor wafer. Each micro chamber includes an upper chamber portion defining an upper working surface and a lower chamber portion defining a lower working surface. The upper chamber portion and the lower chamber portion are relatively movable between an open position for loading or removing the semiconductor wafer and a closed position for receiving and processing the semiconductor wafer. Compared with the prior art, the multi-chamber semiconductor processing apparatus of the present disclosure are provided with a plurality of micro chambers in a longitudinal direction, which enables the multi-chamber semiconductor processing apparatus to carry out single-wafer chemical processing on a plurality of semiconductor wafers at the same time.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Embodiments of a semiconductor processing apparatus are disclosed. The semiconductor processing apparatus includes a micro chamber for tightly accommodating and processing a semiconductor wafer. The micro chamber includes an upper chamber portion defining an upper working surface and a lower chamber portion defining a lower working surface. The upper chamber portion and the lower chamber portion are relatively movable between an open position for loading and removing the semiconductor wafer and a closed position for tightly accommodating the semiconductor wafer. The semiconductor processing apparatus adopts a modified column device, a lower chamber portion and a balance correction device to achieve easy operation and maintenance, better prevention of chemical processing fluid leakage, and corrosion-resistant design.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
A multi-chamber semiconductor processing device comprises at least two micro-chambers for receiving and processing a semiconductor wafer. Each micro-chamber comprises an upper chamber portion forming an upper work surface and a lower chamber portion forming a lower work surface. The upper chamber portion and the lower chamber portion relatively move between an open position for loading or removing the semiconductor wafer and a closed position for receiving and processing the semiconductor wafer. Multiple micro-chambers are disposed longitudinally, so that the multi-chamber semiconductor processing device can perform single wafer chemical processing on multiple semiconductor wafers at the same time.
Provided is a semiconductor processing device, comprising a micro-chamber for tightly accommodating and processing a semiconductor wafer. The micro-chamber comprises an upper chamber portion for forming an upper work surface and a lower chamber portion for forming a lower work surface. The upper chamber portion and the lower chamber portion are capable of relatively moving between an open position for loading and/or removing the semiconductor wafer and a close position for tightly accommodating the semiconductor wafer. When the upper chamber portion or the lower chamber portion is in the close position, the semiconductor wafer is mounted between the upper work surface and the lower work surface, and a gap through which a treatment fluid flows is formed between the semiconductor wafer and an inner wall of the micro-chamber. The upper chamber portion and/or the lower chamber portion comprises at least one inlet through which the treatment fluid enters the micro-chamber and at least one outlet through which the treatment fluid is discharged from the micro-chamber. The semiconductor processing device utilizes an improved upright column device and lower chamber portion and provides a balance correction device, thereby achieving corrosion resistance, easy maintenance and use, a chemical treatment fluid leakage recycling mechanism, and leveling correction.
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