Abstract

The invention relates to a plasma-enhanced atomic layer deposition apparatus comprising a vacuum chamber (1), a reaction chamber (2) arranged inside the vacuum chamber (1), a substrate holder (4) for supporting a substrate (41), and a showerhead nozzle (5) arranged opposite the substrate holder (4) such that a reaction zone (20a) is formed between the showerhead nozzle (5) and the substrate holder (4) in the reaction space (20), the apparatus further comprising a first power source (PS1) electrically connected to the substrate holder (4), and a second power source (PS2) electrically connected to the showerhead nozzle (5), said first power source (PS1) and second power source (PS2) are arranged outside the vacuum chamber (1).

IPC Classes  ?

• C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
• C23C 16/503 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A method for producing a metal oxide film on the surfaces of electrode active material situated on a metal substrate is disclosed. The method comprises: subjecting in a continuous manner the deposition surfaces of the electrode active material to alternately repeating surface reactions of two or more different precursors in a reaction space by exposing the deposition surfaces to one precursor at a time for a time period of 1 millisecond 20 seconds, to form a discontiguous metal oxide film on the surfaces of the electrode active material, wherein the discontiguous metal oxide film exhibits a thickness gradient varying from thicker to thinner in the direction from the outer surface towards the inner surface of the layer of electrode active material.

IPC Classes  ?

• C23C 16/04 - Coating on selected surface areas, e.g. using masks
• C23C 16/40 - Oxides
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/54 - Apparatus specially adapted for continuous coating

Abstract

A reaction chamber, apparatus and method for atomic layer deposition. The reaction chamber includes a gas inlet, a gas outlet arranged spaced apart from the gas inlet, and two or more substrate racks. Each of the substrate racks is arranged to support two or more separate substrates such that a substrate batch is formed. The two or more substrate racks are arranged inside the reaction space of the reaction chamber between the gas inlet and the gas outlet, and the two or more substrate racks are arranged in a row assembly between the gas inlet and the gas outlet.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/54 - Apparatus specially adapted for continuous coating

Abstract

The invention relates to an apparatus for subjecting a surface (100a) of a substrate (100) to successive surface reactions of at least a first precursor and a second precursor according to the principles of atomic layer deposition. The apparatus comprising a reaction chamber (1), a gas inlet (4) arranged to supply precursor gases into the reaction space (3) of the reaction chamber (1); a gas outlet (5) arranged to discharge gases from the reaction space (3) of the reaction chamber (1), the gas outlet (5) being arranged spaced apart from the gas inlet (4); and a plasma discharge electrode (6). The apparatus further comprises at least one substrate rack (7) being arranged to support two or more separate substrates (100) such that a substrate batch is formed. The substrate holders (8) are arranged to support the substrates (100) in a vertical position.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

A method for producing a film of rare earth metal oxide on a surface of a substrate is disclosed. The method comprises, in a reaction space, in any order the alternating steps of: a) exposing a deposition surface to an alcohol-based precursor for oxygen such that at least a portion of said alcohol-based precursor for oxygen gets adsorbed onto the deposition surface of the substrate, and subsequently purging the deposition surface with an inert gas for a first period of time of 1 - 180 seconds; and b) exposing a deposition surface to a precursor for rare earth metal such that at least a portion of said precursor for rare earth metal gets adsorbed onto the deposition surface of the substrate, and subsequently purging the deposition surface with an inert gas for a second period of time. Further is disclosed the use of the method.

IPC Classes  ?

• C23C 16/40 - Oxides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Abstract

The invention relates to a method and an atomic layer deposition apparatus (1) for coating an inner surface of a substrate tube (4). The apparatus (1) comprising a first gas connection fitting (5) arranged to receive a first end (4a) of the substrate tube (4) and to connect the substrate tube (4) from its first end (4a) to the apparatus (1), a second gas connection fitting (6) arranged to receive a second end (4b) of the substrate tube (4) and to connect the substrate tube (4) from its second end (4b) to the apparatus (1), an inlet tube (2) arranged to supply the first precursor and the second precursor, and an outlet tube (3) arranged to discharge the first precursor and the second precursor that have been supplied through the substrate tube (4).

IPC Classes  ?

• C23C 16/04 - Coating on selected surface areas, e.g. using masks
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Abstract

A method for fabricating a plasma etch-resistant film on a surface of a substrate is disclosed. The method comprises the steps of forming, in a reaction space by exposing a deposition surface to alternately repeated, essentially self-limiting surface reactions of precursors, one precursor at a time, - an intermediate layer of dielectric material on the surface of the substrate, and - a protective layer on the intermediate layer, to form a plasma etch-resistant film for hindering current passing through the plasma-etch resistant film to the substrate. Further is disclosed a plasma etch-resistant film and uses thereof.

IPC Classes  ?

• C23C 16/40 - Oxides
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01J 37/32 - Gas-filled discharge tubes

Abstract

An atomic layer deposition apparatus arranged to process multiple substrates concurrently in a batch process and a method for loading a substrate batch. The apparatus includes a loading chamber connected to the vacuum chamber through a loading connection; a loading arrangement arranged to move a substrate batch (B) between the loading chamber and the reaction chamber inside the vacuum chamber through the loading connection; and the reaction chamber including a support part forming a reactor bottom; and a cover part forming reactor side walls and a reactor roof. The cover part is movably arranged with respect to the support part between an open position of the reaction chamber and a closed position of the reaction chamber.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

An atomic layer deposition reaction chamber and a reactor. The reaction chamber includes a first end, a second end, and a longitudinal central axis (X) between the first and second ends and a length (L) in the direction of the longitudinal central axis (X), and a first side wall and a second side wall defining width (W) of the reaction chamber, and a width central axis (Y) extending perpendicularly to the longitudinal central axis (X). The reaction chamber has along the longitudinal central axis (X) an increasing width (W) from the first end towards the width central axis (Y) and a decreasing width (W) from the width central axis (Y) towards the second end.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

The invention relates to an atomic layer deposition apparatus and a method in which the apparatus comprising a reaction chamber (10), an electrode assembly (2) arranged in connection with a top wall (11), a counter electrode (3) arranged opposite the electrode assembly (2), a reaction zone (15a) is formed between the electrode assembly (2) and the counter electrode (3), a precursor supply opening (4) via which the precursors are supplied to the reaction space (15), a connecting element (14) arranged between the electrode assembly (2) and the top wall (11), a dielectric layer (5) provided on an inner surface (11a) of the top wall (11), and a gap (6) formed between a upper surface (2a) of the electrode assembly (2) and the dielectric layer (5) for providing a flow path (8) for a blocking gas to prevent a precursor film formation.

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/509 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
• H01J 37/32 - Gas-filled discharge tubes

Abstract

An atomic layer deposition apparatus arranged to process multiple substrates concurrently in a batch process, the atomic layer deposition apparatus having a vacuum chamber, and a reaction chamber arranged inside the vacuum chamber. The reaction chamber includes a support part for supporting a substrate rack provided inside the reaction chamber, and a cover part for forming a housing surrounding the substrate rack provided at the support part. The atomic layer deposition apparatus further includes a conductive heater arranged to the reaction chamber; the conductive heater is arranged to provide thermal energy to substrates provided in the substrate rack inside the reaction chamber. The invention also relates to an arrangement having a substrate rack inside the reaction chamber.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Abstract

A method for fabricating a wear-resistant optical film on a quartz substrate, and to a wear-resistant optical film and use of a wear-resistant optical film. The wear-resistant optical film includes a zinc sulphide layer on a first titanium oxide layer, the wear-resistant optical film arranged on the quartz substrate, the first titanium oxide layer improving the adhesion of the wear-resistant optical film to the quartz substrate. The method includes a) first, depositing the first titanium oxide layer on the quartz substrate with ALD and at least two precursors, and b) depositing the zinc sulphide layer on the first titanium oxide layer with ALD and at least two precursors. A wear-resistant optical film and use thereof are also disclosed.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/08 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
• C23C 16/18 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• C23C 16/40 - Oxides

Abstract

An atomic layer deposition reactor and a method for operating a reactor. The reactor includes a vacuum chamber having a loading wall provided with a loading opening, and a reactor door assembly having a reactor door. The reactor door assembly is arranged to move the reactor door between a first door position in which the reactor door is against the loading wall and arranged to close the loading opening, and a second door position in which the reactor door is spaced apart from and opposite the loading wall. The reactor door assembly is further arranged to move the reactor door between the second door position, and a third door position in which the reactor door is aside from the loading opening.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Abstract

A loading device, arrangement, and method for loading a reaction chamber inside a vacuum chamber. The loading device includes a loading platform arranged to support the reaction chamber, the loading platform having a first end, a second end and a first direction, a first loading member provided to the loading platform, and a second loading member provided to the loading platform, the first loading member being arranged independently movable in relation to the loading platform and the second loading member in the first direction, and the second loading member being arranged independently movable in relation to the loading platform and the first loading member in the first direction.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

A vacuum chamber and an arrangement for atomic layer deposition. The vacuum chamber includes a loading wall provided with a loading opening, a back wall opposite the loading wall, and a first direction extending in a direction between the loading wall and the back wall. The vacuum chamber further includes a first vacuum chamber support rail inside the vacuum chamber and extending in the first direction, and a second vacuum chamber support rail inside the vacuum chamber and extending in the first direction and arranged spaced apart from the first vacuum chamber support rail. The first vacuum chamber support rail is arranged independently movable in vertical direction, and the second vacuum chamber support rail is arranged independently movable in vertical direction.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Abstract

An atomic layer deposition apparatus having a reaction chamber arranged inside a vacuum chamber and a fixed gas manifold assembly fixedly provided to the atomic layer deposition apparatus and arranged to supply gases from outside the vacuum chamber to the reaction chamber. The reaction chamber is a movable reaction chamber which is arranged movable relative to the vacuum chamber and relative to the fixed gas manifold assembly. The atomic layer deposition apparatus further includes a connection arrangement coupling the movable reaction chamber to the fixed gas manifold assembly. The connection arrangement includes a flexible outer flange assembly surrounding the fixed gas manifold assembly, and a first connection surface connecting to a second connection surface of the reaction chamber.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

A gas feeding cup removably provided in a fixed gas manifold structure of an atomic layer deposition apparatus and including a cup bottom including gas feeding channels extending through the cup bottom from a cup bottom outer surface to a cup bottom inner surface on the other side of the cup bottom; and a cup wall surrounding the cup bottom and extending transverse relative to the cup bottom in a direction away from the cup bottom at the inner surface side of the cup bottom such that a gas feeding space is formed by the cup wall and the cup bottom inner surface.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

A method for forming a barrier deposit within a substrate comprising defects is disclosed. The method comprises introducing the substrate into a reaction space, wherein: - the substrate contains water and/or is exposed to water, and simultaneously the substrate is exposed to a first chemical, wherein the first chemical is configured to react with the water; and - the substrate is subjected to a diffusion treatment for allowing the water and the first chemical to diffuse into the defects of the substrate in order to react with each other within the substrate to form a barrier deposit within the substrate clogging the defects in the substrate. Further is disclosed a substrate comprising a barrier deposit within the substrate and the use of the method.

IPC Classes  ?

• C23C 14/04 - Coating on selected surface areas, e.g. using masks
• C23C 16/04 - Coating on selected surface areas, e.g. using masks

Abstract

An atomic layer deposition apparatus and a method for processing a surface of a substrate successively with at least a first precursor and a second precursor. The apparatus includes a substrate support and a precursor supply head. The substrate support and the precursor supply head are arranged opposite to each other such that a reaction gap is provided between the substrate support and the precursor supply head. The apparatus further includes a moving mechanism arranged to rotate the substrate support and the precursor supply head relative to each other. The moving mechanism is arranged move the substrate support and the precursor supply head relative to each other in a moving direction such that the reaction gap is adjusted.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

The method for doping a semiconductor includes the following steps in the following order: separation layer deposition step, in which a separation layer is deposited on the surface of a substrate, a mixture material source layer deposition step, in which a mixture material source layer including a mixture material is deposited on the separation layer, the mixture material of the mixture material source layer including a dopant substance, and annealing the substrate, the separation layer, and the mixture material source layer in an annealing step to arrange diffusion of dopant substance from the mixture material source layer to the substrate and to the separation layer.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/56 - After-treatment
• C23C 16/40 - Oxides

Abstract

An atomic layer deposition apparatus includes a substrate support having a support surface, a precursor supply head having an output face, and a rotating mechanism arranged to rotate the substrate support and the precursor supply head relative to each other. The apparatus further includes a process chamber provided with a discharge connection for discharging gases from the process chamber.

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

An atomic layer deposition layer apparatus including a substrate support having a support surface, a precursor supply head having an output face with at least one reaction zone via which precursors are supplied, and a rotating mechanism. The substrate support and the precursor supply head are arranged to be rotated relative to each other with the rotating mechanism. The at least one reaction zone includes a precursor supply zone open to the output face of the precursor supply head for supplying precursor, and a suction zone open to the output face of the precursor supply head and arranged to surround the precursor supply zone at the output face of the precursor supply head.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

Abstract

The invention relates to a reaction chamber (10), apparatus and method for atomic layer deposition. The reaction chamber (10) comprises a gas inlet (92), a gas outlet (102) arranged spaced apart from the gas inlet (92), and two or more substrate racks (B1, B2). Each of the substrate racks (b1, B2) is arranged to support two or more separate substrates (2) such that a substrate batch is formed. The two or more substrate racks (B1, B2) are arranged inside the reaction space (8) of the reaction chamber (10) between the gas inlet (92) and the gas outlet (102), and the two or more substrate racks (B1, B2) are arranged in a row assembly between the gas inlet (92) and the gas outlet (102).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

The invention relates to an atomic layer deposition reaction chamber (20) and a reactor (10). The reaction chamber (20) comprises a first end (24),a second end (26), and a longitudinal central axis (X) between the first and second ends (24,26) and a length (L) in the direction of the longitudinal central axis (X), and a first side wall (27) and a second side wall (28) defining width (W) of the reaction chamber (20), and a width central axis (Y) extending perpendicularly to the longitudinal central axis(X).The10 reaction chamber (20) has along the longitudinal central axis (X) an increasing width (W) from the first end (24) towards the width central axis (Y) and a decreasing width (W) from the width central axis (Y) towards the second end (26).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

The invention relates to an atomic layer deposition apparatus (1) arranged to process multiple substrates concurrently in a batch process and a method for loading a substrate batch. The apparatus comprises a loading chamber (30) connected to the vacuum chamber (20) through a loading connection (40); a loading arrangement (50) arranged to move a substrate batch (B) between the loading chamber (30) and the reaction chamber (10) inside the vacuum chamber (20) through the loading connection (40); and the reaction chamber (10) comprising a support part (11) forming a reactor bottom; and a cover part (12) forming reactor side walls and a reactor roof. The cover part (12) is movably arranged with respect to the support part (11) between an open position of the reaction chamber (10) and a closed position of the reaction chamber (10).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers

Abstract

The invention relates to an atomic layer deposition apparatus (1) arranged to process multiple substrates concurrently in a batch process, the atomic layer deposition apparatus (1) having a vacuum chamber (20), and a reaction chamber (10) arranged inside the vacuum chamber (20). The reaction chamber (10) comprises a support part (11) for supporting a substrate rack (40) provided inside the reaction chamber (10), and a cover part (12) for forming a housing surrounding the substrate rack (40) provided at the support part (11). The atomic layer deposition apparatus (1) further comprises a conductive heater (30) arranged to the reaction chamber (10); the conductive heater (30) is arranged to provide thermal energy to substrates provided in the substrate rack (40) inside the reaction chamber (10). The invention also relates to an arrangement having a substrate rack (40) inside the reaction chamber (10).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Goods & Services

Coating machines and machine tools and parts thereto. Computers, computer programs, computer software and measuring and controlling apparatus and instruments for use in chemical, material (physical), optical and mechanical processes and in production in the functional surfaces sector and nanotechnology. Maintenance of coating machines. Coating of metal and nonmetal surfaces; thin film coating. Training related to coatings of metals and non-metals. Research and development of coatings for metals and non-metals; expert advice relating to the development of coatings for metals and nonmetals; expert advice relating to the quality control of coatings for metals and nonmetals; expert advice relating to the testing of coatings for metals and nonmetals; scientific expert advice relating to coatings for metals and nonmetals; technical expert advice relating to coatings for metals and nonmetals; computer software technical support services.

Abstract

A method and apparatus for processing a surface of a substrate with a cluster apparatus including a transport chamber and two or more process reactors connected to the transport chamber. The method further includes subjecting the surface of the substrate to a surface preparation step for providing a prepared substrate surface, providing an interface layer on the prepared substrate surface of the substrate for forming an interfaced substrate surface, and providing a functional layer on the interfaced substrate surface of the substrate. The process steps are carried out in at least two different process reactors connected to transport chamber the substrate is transported between the at least two process reactors via the transport chamber under vacuum atmosphere.

IPC Classes  ?

• C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01J 37/32 - Gas-filled discharge tubes

Goods & Services

Maintenance of coating machines. Training related to coatings of metals and non-metals. Research and development of coatings for metals and non-metals; expert advice relating to the development of coatings for metals and nonmetals; expert advice relating to the quality control of coatings for metals and nonmetals; expert advice relating to the material testing of coatings for metals and nonmetals; scientific expert advice relating to coatings for metals and nonmetals; technical expert advice relating to coatings for metals and nonmetals; computer software technical support services.

Goods & Services

Display screens and display monitors; electrical and electronic components. Scientific and technological services and research and design in the field of display screens and display monitors, glass coatings of display screens and display monitors; product design services.

Goods & Services

Coating machines and machine tools and parts thereto. Computers, computer programs, computer software and measuring and controlling apparatus and instruments for use in chemical, material (physical), optical and mechanical processes and in production in the functional surfaces sector and nanotechnology. Maintenance of coating machines. Coating of metal and nonmetal surfaces; thin film coating. Training related to coatings of metals and non-metals. Research and development of coatings for metals and non-metals; expert advice relating to the development of coatings for metals and nonmetals; expert advice relating to the quality control of coatings for metals and nonmetals; expert advice relating to the testing of coatings for metals and nonmetals; scientific expert advice relating to coatings for metals and nonmetals; technical expert advice relating to coatings for metals and nonmetals; computer software technical support services.

Abstract

The invention relates to a vacuum chamber (20) and an arrangement for atomic layer deposition. The vacuum chamber (20) comprises a loading wall (21) provided with a loading opening (25), a back wall (22) opposite the loading wall (21), and a first direction (A) extending in a direction between the loading wall (21) and the back wall (22). The vacuum chamber (20) further comprises a first vacuum chamber support rail (30) inside the vacuum chamber (20) and extending in the first direction (A), and a second vacuum chamber support rail (32) inside the vacuum chamber (20) and extending in the first direction (A) and arranged spaced apart from the first vacuum chamber support rail (30). The first vacuum chamber support rail (30) is arranged independently movable in vertical direction, and the second vacuum chamber support rail (30) is arranged independently movable in vertical direction.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

The invention relates to a gas feeding cup (1) removably provided in a fixed gas manifold structure (2) of an atomic layer deposition apparatus and comprising a cup bottom (10) comprising gas feeding channels (13) extending through the cup bottom (10) from a cup bottom outer surface (11) to a cup bottom inner surface (12) on the other side of the cup bottom (10); and a cup wall (20) surrounding the cup bottom (10) and extending transverse relative to the cup bottom (10) in a direction away from the cup bottom (10) at the inner surface side of the cup bottom (10) such that a gas feeding space (30) is formed by the cup wall (20) and the cup bottom inner surface (12).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases

Abstract

The invention relates to an atomic layer deposition reactor and to a method for operating a reactor. The reactor (10) comprises a vacuum chamber (20) having a loading wall (21) provided with a loading opening (25), and a reactor door assembly (400) having a reactor door (300). The reactor door assembly (400) is arranged to move the reactor door (300) between a first door position in which the reactor door (300) is against the loading wall (21) and arranged to close the loading opening (25), and a second door position in which the reactor door (300) is spaced apart from and opposite the loading wall (21). The reactor door assembly (400) is further arranged to move the reactor door (300) between the second door position, and a third door position in which the reactor door (300) is aside from the loading opening (25).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Abstract

The invention relates to a loading device (100), arrangement, and method for loading a reaction chamber (200) inside a vacuum chamber (10). The loading device (100) comprises a loading platform (110) arranged to support the reaction chamber (200), the loading platform (110) having a first end (115), a second end (116) and a first direction (A), a first loading member (120) provided to the loading platform (110), and a second loading member (122) provided to the loading platform (110), the first loading member (120) being arranged independently movable in relation to the loading platform (110) and the second loading member (122) in the first direction (A), and the second loading member (122) being arranged independently movable in relation to the loading platform (110) and the first loading member (120) in the first direction (A).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components

Abstract

The invention relates to an atomic layer deposition apparatus having a reaction chamber (1) arranged inside a vacuum chamber and a fixed gas manifold assembly (3) fixedly provided to the atomic layer deposition apparatus and arranged to supply gases from outside the vacuum chamber to the reaction chamber (1). The reaction chamber (1) is a movable reaction chamber (1) which is arranged movable relative to the vacuum chamber and relative to the fixed gas manifold assembly (3). The atomic layer deposition apparatus further comprises a connection arrangement (4) coupling the movable reaction chamber (1) to the fixed gas manifold assembly (3). The connection arrangement (4) comprises a flexible outer flange assembly (5) surrounding the fixed gas manifold assembly (3), and a first connection surface (6) connecting to a second connection surface (11) of the reaction chamber (1).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C30B 25/16 - Controlling or regulating

Goods & Services

(1) Maintenance of coating machines. (2) Coating of metal and nonmetal surfaces; thin film coating. (3) Training related to coatings of metals and non-metals. (4) Research and development of coatings for metals and non-metals; expert advice relating to the development of coatings for metals and nonmetals; expert advice relating to the quality control of coatings for metals and nonmetals; expert advice relating to the testing of coatings for metals and nonmetals; scientific expert advice relating to coatings for metals and nonmetals; technical expert advice relating to coatings for metals and nonmetals; computer software technical support services.

Goods & Services

Treatment of materials in the nature of coating of metal and nonmetal surfaces by means of atomic layer deposition; treatment of materials by application of thin film coating of industrial products, electronic components and machine parts Measuring and controlling apparatus and instruments, namely, thermometers not for medical use, barometers, densitometers not for medical use, viscosity meters, liquid level meters, flow meters, and machine vision applications consisting of cameras, computers and optical sensors to optically measure flame, all for use in chemical, material being physical, optical and mechanical processes and production in the functional surfaces sector and nanotechnology Maintenance of coating machines Training in the field of coatings of metals and non-metals Research and development of coatings for metals and non-metals; expert advice being advisory services for others relating to the development of coatings for metals and nonmetals; expert advice being advisory services for others relating to the quality control of coatings for metals and nonmetals; expert advice being advisory services for others relating to the testing of coatings for metals and nonmetals; scientific expert advice, namely, providing scientific advice relating to coatings for metals and nonmetals; technical expert advice being technical advisory services relating to coatings for metals and nonmetals

Abstract

The invention relates to a method for fabricating a wear-resistant optical film (20) on a quartz substrate (10), and to a wear-resistant optical film (20) and use of a wear-resistant optical film (20). The wear-resistant optical film (20) comprises a zinc sulphide layer (24) on a first titanium oxide layer (22), the wear-resistant optical film (20) arranged on the quartz substrate (10), the first titanium oxide layer (22) improving the adhesion of the wear-resistant optical film to the quartz substrate (10). The method comprises a) first, depositing (110) the first titanium oxide layer (22) on the quartz substrate (10) with ALD and at least two precursors, and b) depositing (120) the zinc sulphide layer (24) on the first titanium oxide layer (22) with ALD and at least two precursors (230, 240). A wear-resistant optical film (20) and use thereof are also disclosed.

IPC Classes  ?

• G02B 1/115 - Multilayers
• G02B 1/14 - Protective coatings, e.g. hard coatings
• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C03C 17/34 - Surface treatment of glass, e.g. of devitrified glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions

Goods & Services

Display screens and display monitors, namely, LCD display screens and display panels, electroluminescent display screens and display panels, electronic display boards, plasma display boards, electronic display screens and combinations or hybrids thereof Scientific and technological services, namely, research and design in the field of display screens and display monitors, glass coatings of display screens and display monitors; new product design services for others

Goods & Services

(1) Coating machines and machine tools and parts thereto. (2) Computers, computer programs, computer software and measuring and controlling apparatus and instruments for use in chemical, material (physical), optical and mechanical processes and in production in the functional surfaces sector and nanotechnology. (1) Maintenance of coating machines. (2) Coating of metal and nonmetal surfaces; thin film coating. (3) Training related to coatings of metals and non-metals. (4) Research and development of coatings for metals and non-metals; expert advice relating to the development of coatings for metals and nonmetals; expert advice relating to the quality control of coatings for metals and nonmetals; expert advice relating to the testing of coatings for metals and nonmetals; scientific expert advice relating to coatings for metals and nonmetals; technical expert advice relating to coatings for metals and nonmetals; computer software technical support services.

Goods & Services

Treatment of materials in the nature of coating of metal and nonmetal surfaces by means of atomic layer deposition; treatment of materials by application of thin film coating of industrial products, electronic components and machine parts Coating machines and machine tools for use in chemical, material being physical, optical and mechanical processes and in production in the field of functional coatings and nanotechnology, namely, coating machines for atomic scale layer deposition and replacement parts therefor Measuring and controlling apparatus and instruments, namely, thermometers not for medical use, barometers, densitometers not for medical use, viscosity meters, liquid level meters, flow meters, and machine vision applications consisting of cameras, computers and optical sensors to optically measure flame, all for use in chemical, material being physical, optical and mechanical processes and production in the functional surfaces sector and nanotechnology Maintenance of coating machines Training in the field of coatings of metals and non-metals Research and development of coatings for metals and non-metals; expert advice being advisory services for others relating to the development of coatings for metals and nonmetals; expert advice being advisory services for others relating to the quality control of coatings for metals and nonmetals; expert advice being advisory services for others relating to the testing of coatings for metals and nonmetals; scientific expert advice, namely, providing scientific advice relating to coatings for metals and nonmetals; technical expert advice being technical advisory services relating to coatings for metals and nonmetals

Goods & Services

(1) Maintenance of coating machines. (2) Training related to coatings of metals and non-metals. (3) Research and development of coatings for metals and non-metals; expert advice relating to the development of coatings for metals and nonmetals; expert advice relating to the quality control of coatings for metals and nonmetals; expert advice relating to the material testing of coatings for metals and nonmetals; scientific expert advice relating to coatings for metals and nonmetals; technical expert advice relating to coatings for metals and nonmetals; computer software technical support services.

Goods & Services

Maintenance of coating machines Training in the field of coatings of metals and non-metals Research and development of coatings for metals and non-metals; expert advice being advisory services for others relating to the development of coatings for metals and nonmetals; expert advice being advisory services for others relating to the quality control of coatings for metals and nonmetals; expert advice being advisory services for others relating to the material testing of coatings for metals and nonmetals; scientific expert advice, namely, providing scientific advice relating to coatings for metals and nonmetals; technical expert advice being technical advisory services relating to coatings for metals and nonmetals

Abstract

A display arrangement comprises a thin film display element comprising a first patterned conductor layer, comprising a first display electrode, on a first side of an emissive layer; a second patterned conductor layer, comprising a second display electrode, on a second side of the emissive layer opposite the first side; and a touch-sensing element comprising first and second touch electrodes formed in the first and second patterned conductor layers, respectively. The display arrangement further comprises a control unit configured to measure capacitive coupling for at least one of the touch electrodes, said measuring comprising supplying a measurement volt age signal to the touch-sensing element, and, when supplying the measurement voltage signal to one touch electrode, to supply a shielding voltage signal to the other touch electrode to decrease an effect of a touch from the side of said other touch electrode on the capacitive coupling for said one touch electrode.

IPC Classes  ?

• G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• H10K 59/40 - OLEDs integrated with touch screens

Abstract

A method for doping a semiconductor is disclosed. The method comprises the following steps in the following order: separation layer deposition step (110), in which a separation layer (30) is deposited on the surface (11) of a substrate (10), a mixture material source layer deposition step (111), in which a mixture material source layer (31) comprising a mixture material is deposited on the separation layer (30), the mixture material of the mixture material source layer comprising a dopant substance, and annealing the substrate (10), the separation layer (30), and the mixture material source layer (31) in an annealing step (113) to arrange diffusion of dopant substance from the mixture material source layer (31) to the substrate (10) and to the separation layer (30, 36). An intermediate semiconductor device (80, 81) is also disclosed.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/38 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The invention relates to an atomic layer deposition layer apparatus (2) comprising a substrate support (60) having a support surface (63), a precursor supply head (30) having an output face (33) with at least one reaction zone (44, 44') via which precursors are supplied, and a rotating mechanism (64, 66). The substrate support (60) and the precursor supply head (30) are arranged to be rotated relative to each other with the rotating mechanism (64, 66). The at least one reaction zone (44, 44') comprises a precursor supply zone (47) open to the output face (33) of the precursor supply head (30) for supplying precursor, and a suction zone (46) open to the output face (33) of the precursor supply head (30) and arranged to surround the precursor supply zone (47) at the output face (33) of the precursor supply head (30).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

The invention relates to an atomic layer deposition apparatus (2) and method. The apparatus (2) comprises a substrate support (60) having a support surface (63), a precursor supply head (30) having an output face (33), and a rotating mechanism (64, 66) arranged to rotate the substrate support (60) and the precursor supply head (30) relative to each other. The apparatus further comprises a process chamber (10) provided with a discharge connection (18, 19) for discharging gases from the process chamber (10).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

The invention relates to an atomic layer deposition apparatus (2) and a method for processing a surface of a substrate (200) successively with at least a first and a second precursor. The apparatus (2) comprises a substrate support (60) and a precursor supply head (30). The substrate support (60) and the precursor supply head (30) are arranged opposite to each other such that a reaction gap (65) is provided between them. The apparatus further comprises a moving mechanism (64, 66, 67, 68) arranged to rotate the substrate support (60) and the precursor supply head (30) relative to each other. The moving mechanism (64, 66, 67, 68) is arranged move the substrate support (60) and the precursor supply head (30) relative to each other in a moving direction such that the reaction gap (65) is adjusted.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations

Goods & Services

Scientific and technological services, namely, research and design in the field of display screens and display monitors, glass coatings of display screens and display monitors

Goods & Services

Coating machines and machine tools for use in chemical, material being physical, optical and mechanical processes and in production in the field of functional coatings and nanotechnology, namely, coating machines for atomic scale layer deposition and replacement parts therefor Computers, recorded computer programs and recorded computer software all for use in controlling, regulating, supervising, monitoring and managing chemical, material being physical, optical and mechanical processes and production in the functional surfaces sector and nanotechnology; measuring and controlling apparatus and instruments, namely, thermometers not for medical use, barometers, densitometers not for medical use, viscosity meters, liquid level meters, flow meters, and machine vision applications consisting of cameras, computers and optical sensors to optically measure flame, all for use in chemical, material being physical, optical and mechanical processes and production in the functional surfaces sector and nanotechnology

Goods & Services

Display screens and display monitors; electrical and electronic components. Scientific and technological services and research and design in the field of display screens and display monitors, glass coatings of display screens and display monitors; product design services.

Goods & Services

Coating machines and machine tools and parts thereto. Computers, computer programs, computer software and measuring and controlling apparatus and instruments for use in chemical, material (physical), optical and mechanical processes and in production in the functional surfaces sector and nanotechnology. Maintenance of coating machines. Coating of metal and nonmetal surfaces; thin film coating. Training related to coatings of metals and non-metals. Research and development of coatings for metals and non-metals; expert advice relating to the development of coatings for metals and nonmetals; expert advice relating to the quality control of coatings for metals and nonmetals; expert advice relating to the testing of coatings for metals and nonmetals; scientific expert advice relating to coatings for metals and nonmetals; technical expert advice relating to coatings for metals and nonmetals; computer software technical support services.

Goods & Services

Coating machines and machine tools and parts thereto. Computers, computer programs, computer software and measuring and controlling apparatus and instruments for use in chemical, material (physical), optical and mechanical processes and in production in the functional surfaces sector and nanotechnology. Maintenance of coating machines. Coating of metal and nonmetal surfaces; thin film coating. Training related to coatings of metals and non-metals. Research and development of coatings for metals and non-metals; expert advice relating to the development of coatings for metals and nonmetals; expert advice relating to the quality control of coatings for metals and nonmetals; expert advice relating to the testing of coatings for metals and nonmetals; scientific expert advice relating to coatings for metals and nonmetals; technical expert advice relating to coatings for metals and nonmetals; computer software technical support services.

Goods & Services

Maintenance of coating machines. Training related to coatings of metals and non-metals. Research and development of coatings for metals and non-metals; expert advice relating to the development of coatings for metals and nonmetals; expert advice relating to the quality control of coatings for metals and nonmetals; expert advice relating to the testing of coatings for metals and nonmetals; scientific expert advice relating to coatings for metals and nonmetals; technical expert advice relating to coatings for metals and nonmetals; computer software technical support services.

Abstract

This disclosure relates to use of group 4 element codoping in a phosphor layer of activator-doped zinc sulfide of a display element, a display element, and a method for manufacturing a display element. The display element (100) comprises a first insulator layer (111), a second insulator layer (112), and a first phosphor layer (121) of activator-group 4 element codoped zinc sulfide between the first insulator layer (111) and the second insulator layer (112). The first phosphor layer (121) has an average atomic percentage of group 4 elements of at least 0.01 atomic percent.

IPC Classes  ?

• C09K 11/56 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing sulfur
• C09K 11/57 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing manganese or rhenium
• C09K 11/67 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing refractory metals
• H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
• H05B 33/18 - Light sources with substantially two-dimensional radiating surfaces characterised by the nature or concentration of the activator
• C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

This specification relates to a display arrangement (1) comprising a thin film display element (100) and a display driver unit (200) configured to, while maintaining a second display terminal (222) associated with a second display electrode (122) in its high-impedance state, set a first display terminal (221) associated with a first display electrode (121) and a common display terminal (211) associated with a common display electrode (111), which at least partly laterally overlaps the first display electrode (121) and the second display electrode (122), to their first states and, after setting the first display terminal (221) and the common display terminal (211) to their first states, set the second display terminal (222) to its first state, while maintaining the first display terminal (221) and the common display terminal (211) in their high-impedance states, such that electrical current passes between the first display electrode (121) and the second display electrode (122).

IPC Classes  ?

• G09G 3/3216 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using a passive matrix
• H05B 33/08 - Circuit arrangements for operating electroluminescent light sources
• H05B 33/12 - Light sources with substantially two-dimensional radiating surfaces

Goods & Services

Machines for manufacturing semiconductors.

Goods & Services

(1) Machines for manufacturing semiconductors.

Goods & Services

Machines for manufacturing semiconductors

Goods & Services

Machines for manufacturing semiconductors.

Abstract

A display arrangement (100) comprises a thin film display element (101), comprising an emissive layer (103); first and second patterned conductor layers (104, 105) comprising first and second display electrodes (110, 120), respectively; and a touch electrode. The display arrangement (100) comprises a display driver unit (180) to couple activation electrical voltage (311) between the display electrodes (110, 120) during a first (310) and a second (330) emission-activation period and maintain the display electrodes (110, 120) at substantially equal potentials throughout an intermediate period (320) between the emission-activation periods (310, 320). The display arrangement (100) comprises a control unit (170) to measure, during an emission period formed by the first emission-activation period (310) and the intermediate period, touch-dependent capacitive coupling for the touch electrode (130) throughout at least one measurement period (325) lying outside the rising (311') and the falling period (311'').

IPC Classes  ?

• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
• G09G 3/30 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels

Abstract

The invention relates to a method for fabricating a plasma etch-resistant film (1) on a surface of a substrate (2), wherein the method comprises the step of forming a film comprising an intermediate layer (4) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or any mixture thereof on a first layer (3) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.

IPC Classes  ?

• C23C 16/40 - Oxides
• C09D 1/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01J 37/32 - Gas-filled discharge tubes

Abstract

The invention relates to a method and apparatus for processing surface of a substrate (100) with a cluster apparatus (1) comprising a transport chamber (10) and two or more process reactors (20, 30, 40, 60) connected to the transport chamber (10). The method further comprises subjecting the surface of the substrate (100) to a surface preparation step for providing a prepared substrate surface, providing an interface layer on the prepared substrate surface of the substrate (100) for forming an interfaced substrate surface, and providing a functional layer on the interfaced substrate surface of the substrate (100). The process steps are carried out in at least two different process reactors (20, 30, 40, 60) connected to transport chamber (10) the substrate (100) is transported between the at least two process reactors (20, 30, 40, 60) via the transport chamber (10) under vacuum atmosphere.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/02 - Pretreatment of the material to be coated

Abstract

The invention relates to a transparent thin film electroluminescent display device (100) having a display area (9''). The device (100) comprises a first transparent thin film electroluminescent display (1) having a first display area (9) comprising a first active area (10) capable of emitting light and with a first passive area (20) outside the first active area (10), and a second transparent thin film electroluminescent display (1') having a second display area (9') comprising a second active area (10') capable of emitting light and with a second passive area (20') outside the second active area (10'). The first and second transparent thin film electroluminescent displays (1, 1') are arranged in superposed manner such that the first active area (10) is superposed at least partly with the second passive area (20') in the stacked device structure of the transparent thin film electroluminescent display device (100).

IPC Classes  ?

• C09K 11/08 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials
• C09K 11/56 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing sulfur
• C09K 11/57 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing manganese or rhenium
• H05B 33/06 - Electrode terminals
• H05B 33/10 - Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
• H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
• H05B 33/26 - Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
• H01L 27/15 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
• H01L 27/28 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
• H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
• H01L 51/10 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier - Details of devices
• H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
• G09G 3/30 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels
• G09F 9/302 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements

Abstract

The invention relates to an atomic layer deposition apparatus comprising an atomic layer deposition reactor (1) and a reactor door (2). The reactor door (2) is arranged against the end edge (12) of the reactor (1) in a closed position of the reactor (1). The apparatus comprising a cooling arrangement for cooling the reactor door (2) comprising a shell structure (3) surrounding the reactor (1) from the outside of the reactor (1) such that a cooling channel (4) is formed between the shell structure (3) and the at least one side wall (11) of the reactor (1); a heat exchanger element (6) arranged in the cooling channel (4) in an area of the end edge (12); and a ventilation discharge connection (5, 50) in connection with the cooling channel (4) provided at a distance from the edge end (12).

IPC Classes  ?

• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

The invention relates to a precursor source arrangement (2) for an atomic layer deposition reactor and to an atomic layer deposition apparatus. The precursor source arrangement (2) comprises a valve chamber (40) comprising one or more supply valves (72), and a precursor source chamber (20, 20') having a precursor container space (23) inside the precursor source chamber (20, 20'). The precursor source chamber (20, 20') comprises a precursor source heat transfer element (22) arranged to heat the precursor container (30) inside the precursor container space (23). The valve chamber (40) comprises a valve chamber heat transfer element (50) arranged to heat the one or more valves (72) inside the valve chamber (40), and the valve chamber heat transfer element (50) is arranged in heat transfer contact with the precursor source heat transfer element (22).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• C23C 16/52 - Controlling or regulating the coating process

Abstract

The invention relates to an atomic layer deposition apparatus (2) for processing substrates. The apparatus comprises an atomic layer deposition reactor (8) and one or more precursor supply sources (70, 71, 72, 73) connected to the atomic layer deposition reactor (8). The apparatus (2) further comprises an outer apparatus casing (10, 20, 30, 40), the atomic layer deposition reactor (8) and the one or more precursor sources (70, 71, 72, 73) being arranged inside the outer apparatus casing (10, 20, 30, 40), an apparatus ventilation discharge connection (4, 6) arranged to discharge ventilation gas from inside of the outer apparatus casing (10, 20, 30, 40) and one or more apparatus ventilation inlet connections (52) provided to the outer apparatus casing (10, 20, 30, 40) and arranged to provide ventilation gas into the outer apparatus casing (10, 20, 30, 40).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process
• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials

Abstract

The invention relates to an atomic layer deposition apparatus (1) comprising a vacuum chamber (20), a deposition chamber (2) within the vacuum chamber (20), an inlet channel (5) extending from outside of the vacuum chamber (20) to the deposition chamber (2) such that the inlet channel (5) is connected to the deposition chamber (2) for supplying gases to the deposition chamber (2), a discharge channel (6) extending from the deposition chamber (2) to outside of the vacuum chamber (2) for discharging gases from the deposition chamber (2), one or more first precursor supply sources (3) connected to the inlet channel (5), and one or more second precursor supply sources (4, 4') connected to the inlet channel (5). The vacuum chamber (20) is arranged between the one or more first precursor supply sources (3) and the one or more second precursor supply sources (4).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process

Abstract

The invention relates to precursor source arrangement for an atomic layer deposition apparatus for receiving a liquid precursor container (56, 56', 57, 57') for liquid precursor. The invention also relates to an atomic layer deposition apparatus. The precursor source arrangement comprises a precursor container support arrangement (27, 27', 28, 28', 50, 50', 51, 51', 70, 71, 72, 73, 74) arranged to hold the liquid precursor container (56, 56', 57, 57') in inclined position relative to vertical direction (V).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• F17C 13/08 - Mounting arrangements for vessels

Abstract

The invention relates to a precursor supply chamber (10) for accommodating a precursor container (80) in connection with an atomic layer deposition apparatus. The precursor supply chamber (10) comprises chamber walls (11, 12, 13, 15, 16, 18) defining a chamber space inside the precursor supply chamber (10). The precursor supply chamber (10) also comprises a chamber door assembly (12, 17, 30, 32, 40) arranged to close the precursor supply chamber (10) in gas tight manner, a first heating element (61) provided to the precursor supply chamber (10) and arranged to heat the precursor container (80) inside the chamber space of the precursor supply chamber (10) and a gas tight precursor connection (50) provided to the chamber walls (11, 12, 13, 15, 16, 18) for supplying precursor from the precursor container (80) outside the precursor supply chamber (10).

IPC Classes  ?

• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• F17C 13/00 - Details of vessels or of the filling or discharging of vessels

Abstract

The invention relates to a gas distribution unit (10) in connection with an atomic layer deposition reactor. The gas distribution unit (10) comprises an inlet surface (14), an outlet surface (16), a process gas channel (20, 40) extending through the gas distribution unit (10) and being open to the inlet surface (14) and to the outlet surface (16), a barrier gas inlet fitting (26, 46, 30, 33) connected to the process gas channel (20, 40) between the inlet surface (14) and the outlet surface (16) for supplying barrier gas to the process gas channel (20, 40), and a barrier gas outlet fitting (28, 48, 34, 39) connected to the process gas channel (20, 40) between the inlet surface (14) and the barrier gas inlet fitting (26, 46, 30, 33) for discharging barrier gas from the process gas channel (20, 40).

IPC Classes  ?

• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The invention relates to an apparatus (1) and a method for processing one or more substrates in a batch process according to the principles of atomic layer deposition (ALD). The apparatus (1) comprises a reaction chamber (2), a chamber plate (3) for closing the reaction chamber (2), a motor (9) arranged to move the chamber plate (3) between an open position, in which the reaction chamber (2) is open, and a closed position, in which the reaction chamber (2) is closed, and an actuator arm mechanism (5) connected to said motor (9). The actuator arm mechanism (5) having three or more actuator arms (5a, 5b, 5c) having a distal end, which is connected to the chamber plate (3), the distal ends of the three or more actuator arms (5a, 5b, 5c) define a plane on the chamber plate (3).

IPC Classes  ?

• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/314 - Inorganic layers

Abstract

The invention relates to a precursor supply cabinet (2) for accommodating one or more precursor containers (80), the precursor supply cabinet (2) having 5 cabinet walls (3, 4, 6, 7, 8, 9) defining an inner cabinet space (1). The precursor supply cabinet (2) comprises a ventilation discharge connection (20, 21, 22) arranged to discharge ventilation gas from the inner cabinet space (1), one or more ventilation inlet connections (10, 11), two or more separate 10 gas tight precursor supply chambers (30) for accommodating precursor containers (80). The gas tight precursor supply chambers (30) are arranged inside the inner cabinet space (1) of the precursor supply cabinet (2) such that the inner cabinet space (1) of the precursor supply cabinet (2) surrounding the 15 separate gas tight precursor supply chambers (30) is ventilated.

IPC Classes  ?

• C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
• F17C 13/08 - Mounting arrangements for vessels

Abstract

A display arrangement comprises a thin film display element comprising a first patterned conductor layer, comprising a first display electrode, on a first side of an emissive layer; a second patterned conductor layer, comprising a second display electrode, on a second side of the emissive layer opposite the first side; and a touch-sensing element com prising first and second touch elec trodes formed in the first and second patterned conductor layers, respective ly. The display arrangement further comprises a control unit configured to measure capacitive coupling for at least one of the touch electrodes, said measuring comprising supplying a measurement volt age signal to the touch-sensing element, and, when supplying the measurement voltage signal to one touch electrode, to supply a shielding voltage signal to the other touch electrode to decrease an effect of a touch from the side of said other touch electrode on the capacitive coupling for said one touch electrode.

IPC Classes  ?

• G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• G09G 3/30 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels

Abstract

The invention relates to a method for fabricating a plasma etch-resistant film (1) on a surface of a substrate (2), wherein the method comprises the step of forming a film comprising an intermediate layer (4) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or anymixture thereof on a first layer (3) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.

IPC Classes  ?

• C23C 16/40 - Oxides
• C09D 1/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• H01J 37/32 - Gas-filled discharge tubes

Goods & Services

Coating machines.

Goods & Services

(1) Coating machines for atomic scale layer deposition.

Goods & Services

Coating machines for atomic scale layer deposition

Goods & Services

Coating machines.

Abstract

The invention relates to a nozzle head (2) and apparatus for subjecting a surface (101) of a substrate (100) to alternate surface reactions of at least two precursors (A, B). The nozzle head (2) comprises an output face (3), at least one gas supply nozzle (4), and at least one discharge nozzle (6). The nozzle head (2) comprises on the output face (3) in the following order: a first zone end nozzle (8), a gas supply nozzle (4) and a second zone end nozzle (6, 7, 9), repeated one or more times. The first zone end nozzle (8) is arranged at a first distance (Ly) from the gas supply nozzle (4) and the second zone end nozzle (6) is arranged at a second distance (Lx) from the gas supply nozzle (4). The second distance (Lx) is greater than the first distance (Ly).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/54 - Apparatus specially adapted for continuous coating

Abstract

The invention relates to a method and an apparatus comprising a nozzle head (1) having an output face (2) and comprising at least one precursor nozzle (3) comprising a supply channel (30) and at least one discharge nozzle (4) comprising a discharge channel (40). The apparatus further comprising a supply line (300) in a fluid communication with the supply channel (30) of the precursor nozzle (3); and a discharge line (400) in a fluid communication with the discharge channel (40) of the discharge nozzle (4). The discharge line (400) is connected to the supply line (300) for circulating precursor in the nozzle head (1) by returning at least part of the discharge flow from the output face (2) of the nozzle head (1) via the discharge channel (40) of the discharge nozzle (4) to the supply channel (30) of the precursor nozzle (3).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

The invention relates to a nozzle head (1) and an apparatus for subjecting a surface of a substrate to successive surface reactions of at least two precursors according to the principles of atomic layer deposition, the nozzle head (1) comprises a nozzle head body (2), a nozzle head output face (4) and gas channels (11, 17, 40) for transporting gas. The nozzle head (1) further comprises a first through hole (20) through at least two of the two or more nozzles (10) and a first tube (30) having a tube wall (34) and being fitted into the first through hole (20), said first tube (30) comprising gas conduits (32) provided in the tube wall (34) for providing a fluid communication between the first tube (30) and the gas channels (11, 17, 40) in connection with the two or more nozzles (10).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/54 - Apparatus specially adapted for continuous coating
• B05B 1/00 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means

Abstract

A thin film display element (100) has at least one emissive area (103) in the display region (101) and a layer structure (104) comprising: a first patterned conductor layer (110) comprising a first display electrode (111) in the display region; a second patterned conductor layer (120) comprising a second display electrode (121) in the display region; and an emissive layer (130) between the first and the second conductor layers configured to emit light in the at least one emissive area. The patterned conductor layers further comprise a first touch electrode (141) and a second touch electrode (142) in the display region, the first and the second touch electrodes forming a touch sensor (140) for capacitive touch or proximity sensing.

IPC Classes  ?

• G06F 3/041 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
• G06F 3/044 - Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
• G09G 3/30 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels
• G09G 3/3208 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
• H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes

Abstract

The invention relates to a nozzle head (2) for subjecting a surface of a substrate to successive surface reactions of at least two precursors according to the principles of atomic layer deposition. The nozzle head (2) comprises a body (4), an output surface (16) via which at least one precursor is supplied towards the substrate, and two or more nozzles (6) provided in connection with the output surface (16) for supplying the at least one precursor. The nozzle head (2) comprises at least two separate nozzle units, each nozzle unit comprising one or more nozzles (6). The at least two separate nozzle units are separately supported to the body (4) of the nozzle head (2), and at least one of the separate nozzle units is arranged adjustable relative to the body (4) of the nozzle head (2) independently of the other nozzle units.

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/54 - Apparatus specially adapted for continuous coating
• C23C 16/52 - Controlling or regulating the coating process
• B05B 1/00 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means

Abstract

The invention relates to a nozzle (6) and nozzle head (2) arranged to supply gas towards a surface of a substrate The nozzle (6) comprises a nozzle output surface (46) via which the gas is supplied towards the surface of the substrate, a nozzle top surface (47) opposite the nozzle output surface (47), and a nozzle side wall (41,43) extending between the nozzle output surface (46) and the nozzle top surface (47). The nozzle (6) further comprises at least one recess (82) provided to the nozzle side wall (41, 43), the at least one recess (82) extending between the nozzle top surface (47) and the nozzle output surface (46) for providing a gas passage from the nozzle top surface (47) to the nozzle output surface (46) when the nozzle side wall (41,43) is against a counter surface (11,43).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/54 - Apparatus specially adapted for continuous coating
• B05B 1/00 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
• C23C 16/52 - Controlling or regulating the coating process

Abstract

The invention relates to an apparatus comprising a nozzle head (20) having a first end (21), a second end (22), a first side end (23), a second side end (24) and an output face (25) formed as a curved output face having a curvature axis (C). The nozzle head (20) comprises two or more precursor nozzles (26), a supporting structure (31, 32] and a fixing arrangement (51, 52). The fixing arrangement (51, 52) comprises one first fixing part (51) arranged between the first end (21) of the nozzle head (20) and the supporting structure (31, 32) and one second fixing part (52) arranged between the second end (22) of the nozzle head (20) and the supporting structure (31, 32), the one first fixing part (51) and the one second fixing part (52) are arranged on a support axis (S) parallel to the curvature axis (C).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• C23C 16/52 - Controlling or regulating the coating process
• C23C 16/54 - Apparatus specially adapted for continuous coating

Abstract

The invention relates to a nozzle head (2) for subjecting a surface of a substrate to successive surface reactions of at least two precursor gases according to the principles of atomic layer deposition. The nozzle head (2) comprises a body (4); an output face (16) via which at least one precursor gas is supplied towards the surface of the substrate; and two or more nozzles (6) provided in connection with the output face (16) for supplying the at least one precursor gas. The nozzle head (2) further comprises a nozzle head chamber (22) inside the body (4) of the nozzle head (2), said nozzle head chamber (22) is arranged in fluid communication with the two or more nozzles (6). The nozzle head chamber (22) is provided with a gas inlet (92) for supplying gas into the nozzle head chamber (22) from a gas source (94) outside the nozzle head (2).

IPC Classes  ?

• C23C 16/54 - Apparatus specially adapted for continuous coating
• B05B 1/00 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

The invention relates to a transparent thin film electroluminescent display device (100) comprising a first transparent thin film electroluminescent display (20) having a substrate (24, 44) and a first active layer (22) capable of emitting spectrum of light in a wavelength of visible light. The transparent thin film electroluminescent display device (100) further comprises a second transparent thin film electroluminescent display (40) having a substrate (24, 44) and a second active layer (42), the first and second transparent thin film electroluminescent displays (20, 40) being arranged in superposed manner such that the first and second active layers (22, 42) are spaced apart from each other for forming the transparent thin film electroluminescent display device (100) with a superposed structure.

IPC Classes  ?

• F41G 1/32 - Night sights, e.g. luminescent
• G02B 27/36 - Fiducial marks or measuring scales within the optical system adjustable
• G02B 27/34 - Fiducial marks or measuring scales within the optical system illuminated
• H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
• H05B 33/00 - Electroluminescent light sources
• G02B 23/00 - Telescopes, e.g. binocularsPeriscopesInstruments for viewing the inside of hollow bodiesViewfindersOptical aiming or sighting devices

Abstract

A transparent thin film display element (100) with a display region(101), and a transition region (105) having a first edge (106) bordering the display region and a second edge (107) opposite to the first edge, the transparent display element having a layer stack (103) comprises:a first conductor layer (110); a second conductor layer (120); andan emissive layer (130) superposed between the first and the second conductor layers and configured to emit light upon electrical current flowing through the emissive layer between the first and the second conductor layers. At least one layer (120) of a group comprising the first and the second conductor layers and the emissive layer has, in the transition region (105), a first coverage at the first edge (106), a second coverage lower than the first coverage at the second edge (107), and an intermediate coverage lying between the first and the second coverage.

IPC Classes  ?

• H05B 33/02 - Electroluminescent light sources Details
• G02B 27/01 - Head-up displays
• H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
• H01L 27/01 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
• H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
• H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
• G09G 3/30 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels

Abstract

The invention relates to a method and apparatus (1) for processing gas or aerosol. The apparatus comprises an ejector (16) having a converging-diverging nozzle (18, 20, 22) and an atomizer (6) for atomizing liquid material into droplet jet to the converging-diverging nozzle (18, 20, 22) of the ejector (16) as a main flow (8). The apparatus further comprises a side flow inlet (12) for providing a side flow (14) of inlet gas or inlet aerosol to the converging-diverging nozzle (18, 20, 22) of the ejector (16) by suction caused by the main flow (8) and the ejector (16) and a droplet eliminator (30, 33) for removing liquid droplets from ejector flow (24) discharging from the ejector (16).

IPC Classes  ?

• B01D 47/10 - Venturi scrubbers
• B01D 47/06 - Spray cleaning
• B01F 3/04 - Mixing, e.g. dispersing, emulsifying, according to the phases to be mixed gases or vapours with liquids
• B01F 5/02 - Jet mixers
• B01F 5/18 - Spray-mixers
• B01D 45/08 - Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia by impingement against baffle separators
• B05B 7/00 - Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
• B05B 1/02 - Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops

Abstract

The invention relates to a method and apparatus for forming a coating (4) on a surface of a substrate (2). The method comprising steps: a deposition step for forming a liquid film on the surface of the substrate (2) and a drying step comprising drying the liquid film for forming the coating (4) on the surface of the substrate (2). The drying step comprises drying the liquid film by forming two or more separate suction zones in which vaporized precursor or precursors are discharged from the surface of the substrate (2) by vacuum for drying the liquid film, the two or more separate suction zones being formed successively and spaced apart for drying the liquid film in a staged manner.

IPC Classes  ?

• B05D 3/04 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
• B05C 9/14 - Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by groups , or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating
• F26B 5/04 - Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum

Abstract

A method for manufacturing an inorganic thin film electroluminescent display element comprises forming a layer structure, said forming the layer structure comprising forming a first dielectric layer (11); forming a luminescent layer (12), comprising manganese doped zinc sulfide ZnS:Mn, on the first dielectric layer, andforming a second dielectric layer (13) on the luminescent layer. Each of the first and the second dielectric layers are formed so as to comprise nanolaminate with alternating aluminum oxide Al2O3 and zirconium oxide ZrO2 sub-layers.

IPC Classes  ?

• H05B 33/22 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
• H05B 33/20 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
• H05B 33/14 - Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material
• C23C 16/40 - Oxides
• C09K 11/57 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing manganese or rhenium
• C09K 11/08 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

The invention relates to a method and an apparatus of coating a substrate (1) by subjecting a surface of the substrate (1) to successive surface reactions of a first precursor and a second precursor according to the principles of atomic layer deposition in a reaction chamber (2). The method comprises the steps of arranging the substrate (1) to the substrate support (2c) in the reaction zone (5); supplying a predetermined amount of the first precursor via the gas inlet (20) to the reaction chamber (2) for providing a flow of the first precursor to the reaction zone (5) such that the first precursor is depleted by the end of the second end (2b); supplying the second precursor via the gas inlet (20) to the reaction chamber (2) for providing a flow of the second precursor through the reaction zone (5) and discharging the second precursor from the reaction chamber (2) via the gas outlet (21), the second precursor being inactive to react with the first precursor; generating plasma discharge to the reaction zone (5) with the plasma discharge electrode (4) for forming active precursor radicals from the second precursor supplied into the reaction zone (5) during the flow of the second precursor through the reaction zone (5), the active precursor radicals being active to react with the first precursor.

IPC Classes  ?

• C23C 16/52 - Controlling or regulating the coating process
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Abstract

The invention relates to a method and apparatus for subjecting a surface of a substrate (12) to successive surface reactions of precursors according to the principles of atomic layer deposition. The method comprising subjecting the surface of the substrate (12) to the first precursor (A) in a first precursor zone (100) and subjecting the surface of the substrate (12) to the second precursor (B) in a second precursor zone (200). The method further comprises changing the first precursor (A) in the first precursor zone (100) to a subsequent precursor (C) which is different than the first and second precursors (A, B) and subjecting the surface of the substrate (12) to the subsequent precursor (C) in the first precursor zone (100) and subjecting the surface of the substrate (12) to the second precursor (B) in the second precursor zone (200).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• C23C 16/54 - Apparatus specially adapted for continuous coating

Abstract

The invention relates to an apparatus and method for processing particulate matter by exposing the particulate matter to successive surface reactions of at least a first and a second gaseous precursor according to the principles of atomic layer deposition method. The apparatus comprises a vacuum chamber (1), a reaction chamber (2) for particulate matter, the reaction chamber (2) provided inside the vacuum chamber (1), a vibration mechanism (3) for vibrating particulate matter inside the reaction chamber (2); and a precursor system (4) arranged to supply the at least first and second gaseous precursors through the reaction chamber (2) for subjecting the particulate matter to the at least first and second gaseous precursors. The method comprises the steps of supplying the at least first and second gaseous precursors through the reaction chamber (2) for subjecting the particulate matter to the at least first and second gaseous precursors, and vibrating particulate matter inside the reaction chamber (2).

IPC Classes  ?

• C23C 16/442 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed processes
• C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
• B01J 8/40 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with fluidised particles according to "fluidised-bed" technique with fluidised bed subjected to vibrations or pulsations
• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof

Abstract

The invention relates to an apparatus (1) and method for subjecting a surface of a substrate (13) to successive surface reactions of at least a first precursor and a second precursor according to the principles of atomic layer deposition. The apparatus comprising: a reaction chamber (50) defining a reaction space (6), one or more gas inlets (8), one or more gas outlets (12) and a plasma discharge electrode (16). The apparatus further comprises an grounded grid sheet (21) having openings (23) and arranged within the reaction space (6) opposite the plasma discharge electrode (16).

IPC Classes  ?

• C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber