Disclosed are a magnetron element (4) and a magnetron sputtering apparatus. The magnetron element (4) comprises a closed magnetic pole (1) and an open-circuit magnetic pole (2). The closed magnetic pole (1) surrounds the open-circuit magnetic pole (2). A magnetic field formed between the closed magnetic pole (1) and the open-circuit magnetic pole (2) can make the uniformity of a sputtering deposition thin film be less than 5%. The magnetron element (4) can be applicable to RF/DC PVD technology by means of providing the closed magnetic pole (1) and the open-circuit magnetic pole (2), and can enable a sputtering deposition thin film to satisfy a set uniformity requirement under the range of full process pressures by means of adjusting the shape and distribution of a plasma path (3) formed between the closed magnetic pole (1) and the open-circuit magnetic pole (2), so as to greatly improve the uniformity of the deposition thin film. The magnetron element (4) is widely applicable to magnetron sputtering systems and thin film deposition materials, and the magnetron element (4) can also improve the utilization ratio of a target (5).
Provided are a chuck, a reaction chamber and a semiconductor processing equipment. The chuck comprises an insulating layer (5) and a substrate (7). The insulating layer (5) comprises a first bearing surface (51) for bearing a central area of a wafer (6) and a second bearing surface (52) surrounding the outer periphery of the first bearing surface (51) for bearing an edge area of the wafer (6), wherein the first bearing surface (51) has a first roughness that can increase contact area between the wafer (6) and the first bearing surface (51) under a condition that gas between the first bearing surface (51) and the wafer (6) is evenly distributed. The reaction chamber comprises the chuck. The semiconductor processing equipment comprises the reaction chamber. The chuck, the reaction chamber and the semiconductor processing equipment can improve heat conduction efficiency from the wafer to the chuck, thereby avoiding damage caused by too fast heating up of the wafer surface.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Disclosed are a focusing ring (70) and a plasma treatment device. The inner diameter of the focusing ring is larger than the external diameter of an abutment (71), which matches with the focusing ring and is used for carrying a substrate (82). The focusing ring comprises a first annular step surface (72) and a second annular step surface (73), wherein both the first annular step surface and the second annular step surface are located on the side of the focusing ring facing the substrate, the second annular step surface is located inside of the first annular step surface and lower than the first annular step surface, and the second annular step surface is provided with a concave-convex structure. The focusing ring and the plasma treatment device can reduce the probability of the occurrence of adhesion between the substrate and a polymer, increase the stability during removing the substrate, and avoid the damage of a robot and the substrate. At the same time, the adhesion of a polymer to the back of the substrate can be reduced, thus reducing the contamination of the substrate caused by the polymer, improving the product quality, and reducing the contamination to a robot, a transport chamber and a substrate box caused by the polymer during the transfer process of the substrate.
H01J 37/02 - Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof Details
4.
APPARATUS FOR IMPLEMENTING IMPEDANCE MATCHING AND POWER DISTRIBUTION, AND SEMICONDUCTOR PROCESSING DEVICE
The present invention provides an apparatus for implementing impedance matching and power distribution, and a semiconductor processing device. The apparatus comprises a power distribution circuit and an impedance matching circuit. An input end of the impedance matching circuit is used for being electrically connected to a radio frequency power supply. The power distribution circuit comprises at least two branches, and each branch comprises an upstream end and a downstream end. The upstream end of each branch is connected to an output end of the impedance matching circuit, and the downstream end of each branch is used for being connected to an external component. Each branch is serially connected to a power distribution unit, and the power distribution unit only comprises one first adjustable capacitor. The apparatus and the semiconductor processing device provided in the present invention have low costs, high integration and small volumes.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Disclosed are a compression ring and a semiconductor processing equipment. The compression ring comprises a compression ring body (11, 21) on the inner ring wall of which a plurality of fixing portions (121) and a plurality of shielding portions (122) are provided at intervals in circumferential direction thereof, wherein a plurality of the fixing portions (121) and a plurality of the shielding portions (122) are arranged alternately, the fixing portions (121) serving to compress a first edge area of the upper surface of a wafer (13, 24) and the shielding portions (122) serving to shield a second edge area of the upper surface of the wafer (13, 24). The above-described compassion ring can solve the problem that metal plating coating is deposition on the side or back side of the wafer (13, 24), so that the process results can be improved.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
6.
REACTION CHAMBER AND SEMICONDUCTOR PROCESSING APPARATUS
A reaction chamber and semiconductor processing apparatus. In a reaction chamber (20) are provided a base (21) for bearing a substrate (S) and a pressing ring (22). A rear blowing channel (211) in communication with a rear blowing gas source is provided in the base (21). A ring seal apparatus is provided at an upper surface of the base (21). When the base (21) drives the substrate (S) upwards and lifts up the pressing ring (22), the pressing ring (22) presses, in an overlapping manner, an edge region of the substrate (S), and the ring seal apparatus and a rear surface of the substrate (S) contact such that the upper surface of the base (21) at an inner side of the ring seal apparatus forms a sealed space with the rear surface of the substrate (S), and the rear blowing gas source provides a rear blowing gas to within the sealed space via the rear blowing channel (211). The reaction chamber (20) can greatly decrease processing time while ensuring effective cooling of the substrate (S), and thus can improve productivity of a semiconductor processing apparatus, providing an economic benefit.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
A wafer positioning device and method, the device being used to position a rotation support structure (001) and a wafer position acquisition structure of a wafer (100); the wafer position acquisition structure comprises: a light source (201) comprising an LED; a lens (202), the lens is an elongated lens, and the elongated lens is capable of spreading light emitted by the LED into an elongated spot having an area greater than or equal to a receiving surface area of a charge coupled device (CCD) sensor (203); the CCD sensor (203) is used to receive a light ray from thereabove and outputs to a data processing component a signal corresponding to an intensity of the light ray; and the data processing component receives an output signal of the CCD sensor (203), and processes the same to obtain a position of the wafer. The device has a lower requirement for the light source, thus reducing costs of the device. In addition, only one lens is used to perform processing for the light source, thus simplifying the overall structure of the device and making mounting convenient. The device in combination with the wafer positioning method positions the wafer via an ordinary light source. The method has low computational load and precisely positions a wafer.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
8.
HIGH ASPECT RATIO SHALLOW TRENCH ISOLATION ETCHING METHOD
A high aspect ratio shallow trench isolation etching method is provided. The method comprises an etching step comprising a plurality of depth-etching sub-steps, said plurality of depth-etching sub-steps being used for etching the depth of a shallow trench; in each depth-etching sub-step the variable numerical value used for the process parameter representing the amount of reaction byproduct deposit accumulation changes in accordance with a first rule that decreases said amount of accumulation; alternatively, in each depth-etching sub-step the variable numerical value used for the process parameter representing the amount of reaction byproduct deposit changes in accordance with a second rule that alternately increases and decreases said amount of accumulation. The high aspect ratio shallow trench isolation etching method provided simplifies the etching steps without requiring any etching equipment modifications, but still allows for ideal trench etching contours to be achieved. The invention therefore economizes procedure time and reduces etching costs.
Provided is a method for patterning a substrate, which comprises: a main etching process, performing a main etching on a substrate (1) on the surface of which a mask (2) is formed, and completing the main etching process before the cover area of the mask (2) is reduced; and an over etching process, performing an over etching on the substrate (1) which has experienced the main etching, the etching rate of the mask (2) during the over etching being less than the etching rate of the mask (2) during the main etching. The provided method for patterning a substrate avoids the occurrence of an abrupt corner on a side wall of a PSS pattern during the main etching process through completing the main etching process before the cover area of the mask (2) is reduced, and thereafter reduces the inward-shrinkage rate of the mask (2) by reducing the etching rate of the mask (2) during the over etching, such that the angle of the corner on the side wall of the finally formed PSS triangle taper (11) is increased, thereby improving the smooth flatness of the side wall of the triangle taper (11).
An atomic layer etching device and an atomic layer etching method using same. The atomic layer etching device comprises a reaction cavity (1), a baffle assembly (203), a first plasma generation device (205) and a second plasma generation device (211), wherein the baffle assembly (203) divides a reaction chamber into an upper chamber (213) and a lower chamber (214), and the baffle assembly (203) comprises a baffle capable of being grounded or connected to a direct-current bias power supply, so as to prevent charged particles in the upper chamber from entering the lower chamber (214) and permit active neutral particles to enter the lower chamber (214). The first plasma generation device (205) is used for exciting gas entering the upper chamber (213) into plasma. The second plasma generation device (211) is used for exciting gas entering the lower chamber (214) into plasma. By replacing the traditional reaction gas adsorption with the chemical adsorption of active adsorption particles, the etching rate can be significantly increased, the etching cycle time can be shortened, the amount of etching reaction gas used can be reduced, and process costs can be reduced.
Provided are a reaction chamber and an upper cover opening mechanism thereof. The upper cover opening mechanism is located on one side of the reaction chamber (20) and comprises at least one driving unit (23). Each driving unit (23) comprises a first fixed member (230), a second fixed member (231), a first connection member (232), and a driving apparatus (233). The first fixed member (230) is fixed on the upper cover (22), and is hingedly connected to the first end of the first connection member (232). The driving apparatus (233) is hingedly connected to the second end of the first connection member (232). The second fixed member (231) is fixed to a cavity (21) of the reaction chamber (20), and is hingedly connected to the first connection member (232) between the first end and the second end of the first connection member (232).
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
12.
METHOD FOR DEPOSITING ITO THIN FILM AND GAN-BASED LED CHIP
Disclosed is a method for depositing an ITO thin film. A magnetron sputtering process is used for depositing an ITO thin film. The method comprises the following steps: depositing an ITO buffer layer on the surface of a substrate by using radio frequency and direct current (DC) co-sputtering; and depositing an ITO thin film layer on the surface of the ITO buffer layer by using DC sputtering. Through the radio frequency and DC co-sputtering, damages resulting from bombardment of sputtering particles on the surface of the substrate are effectively reduced. The present invention also provides a GaN-based LED chip, and an ITO transparent electrode of the chip is prepared by using the method for depositing an ITO thin film in the present invention. During deposition of the ITO transparent electrode, because damages resulting from bombardment of sputtering particles on the surface of a GaN substrate are effectively reduced by using the method for depositing an ITO thin film in the present invention, contact resistance between the ITO transparent electrode and the GaN substrate is reduced, the power consumption of the LED chip is lowered, the photoelectric conversion efficiency of the LED chip is increased, and the service life of the LED chip is prolonged.
The present invention provides a support device, a reaction chamber and a semiconductor processing apparatus. In the support device, the lower surface of a clamp part has a first contact area and a first suspending area that are both annular. The first suspending area surrounds the periphery of the ring hole of the clamp ring, while the first contact area surrounds the periphery of the first suspending area. The edge portion of the upper surface of a support tray has a second contact area and a second suspending area that are both annular. The second contact area is provided at the periphery of the edge portion of the upper surface of the support tray, while the second suspending area surrounds the inner side of the second contact area. In the processing position, the first contact area is in contact with the second contact area, and there is a distance in the vertical direction between the first suspending area and the second suspending area. The support device, the reaction chamber and the semiconductor processing apparatus provided by the present invention can not only avoid the formation of pollution particles while the clamp ring is disengaged from the support tray, but also prevent the clamp ring from damaging the support tray, thereby improving the quality and yield of the product and reducing the operation cost of the apparatus.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
14.
REACTION CHAMBER AND SEMI-CONDUCTOR PROCESSING DEVICE
A reaction chamber and semi-conductor processing device, comprising a Faraday shielding ring (21) made of nonconductive magnetic material and an insulating ring (22) made of insulating material; the Faraday shield ring (21) is provided with a slot thereon passing through the ring surface thereof in an axial direction; both the Faraday shielding ring (21) and the insulating ring (22) are disposed in the reaction chamber surrounding the inner peripheral wall of the reaction chamber; the Faraday shielding ring (21) is stacked on the insulating ring (22) in a vertical direction; a shielding ring (211) is disposed surrounding the inner peripheral wall of the insulating ring (22), the shielding ring (211) is connected to an area on the lower surface of the Faraday shielding ring (21) adjacent to the center of the reaction chamber; and the shielding ring (211) is made of the nonconductive magnetic material, and is provided with the slot thereon passing through the ring surface thereof in the axial direction. The reaction chamber and the semi-conductor processing device avoid or reduce the risk of sparking, reduce pollution of the reaction chamber caused by the flaking off of metal particles, and increase the inner diameter and available space of the reaction chamber.
The present invention provides a cap device and a process apparatus. The cap device comprises a water spray cooling portion and a top cover. The water spray cooling portion and the top cover are separate structures. The water spray cooling portion can move with the top cover in a vertical direction. The process apparatus comprises a quartz cavity, a drive mechanism, and the cap device. The cap device is installed above the quartz cavity. The drive mechanism is connected to the top cover of the cap device, and is used for driving the top cover to move in the vertical direction. The moving distance of the top cover in the vertical direction is larger than or equal to the movable distance of the water spray cooling portion in the vertical direction. The cap device and the process apparatus provided by the present invention have simple and reasonable structural designs, and ensure that the quartz cavity is not easily damaged.
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
16.
PORE DEPOSITION PROCESS ON SUBSTRATE AND SEMICONDUCTOR PROCESSING DEVICE
The present invention provides a pore deposition process on a substrate and a semiconductor processing device. In the pore deposition process on the substrate, a metal particle migration process is performed at least once. The metal particle migration process comprises the following steps: step S100, forming a metal layer in a pore on the substrate by sputtering deposition; and step S200, heating the substrate with the metal layer formed thereon to a preset temperature so that metal particles in the metal layer gradually migrate from the top of the pore to the bottom of the pore. The pore deposition process on the substrate and the semiconductor processing device provided in the present invention not only can improve the coverage rate of metal particles on the side wall in the pore so as to provide favorable conditions for a subsequent pore filling process, but also have no special requirements on the size of the pore and thus have a wide application range.
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/443 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
A semiconductor processing device, comprising a reaction chamber (201) and an air extraction chamber (207) which is arranged at the bottom of the reaction chamber, wherein an air exhaust port (202) is provided at the bottom of the reaction chamber, an air inlet port (207c) is provided at the top of the air extraction chamber correspondingly, and the air inlet port is connected to the air exhaust port; an air outlet port (207b) is provided on a side wall of the air extraction chamber for exhausting air in the air extraction chamber; a funnel-shaped conical ring (207a) is provided in the air extraction chamber and is located below the air outlet port, wherein a lower port of the conical ring is smaller than an upper port thereof; and the conical ring is used for dividing the air extraction chamber into an upper chamber and a lower chamber, wherein the upper chamber is in communication with the lower chamber through a ring hole of the conical ring. The semiconductor processing device can reduce the accumulation of some by-product granules carried in an airflow, and can restrain the accumulated by-product granules from being raised by the airflow, thereby preventing the by-product granules from returning to the reaction chamber.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
18.
MAGNETRON SPUTTERING CHAMBER AND MAGNETRON SPUTTERING DEVICE
Provided are a magnetron sputtering chamber and magnetron sputtering device, comprising a bearing member and an annular magnet assembly, the bearing member being used to bear the annular magnet assembly and isolate the plasmas in the magnetron sputtering chamber from the annular magnet assembly; the annular magnet assembly surrounds the periphery of a target and is located near the target to generate an auxiliary magnetic field capable of increasing the magnetic field intensity of the edge area of the target in the process of sputtering deposition, thus increasing the amount of particles sputtered out of the edge area of the target and reducing the amount of particles sputtered out of the central area of the target, further increasing the film thickness of the edge area of a substrate and reducing the film thickness of the central area of the substrate. The magnetron sputtering chamber of the present invention not only more flexibly adjusts distribution and intensity of the magnetic field generated in the magnetron sputtering chamber, but also improves uniformity of film thickness while obtaining low-stress film.
Provided are a reaction chamber and plasma machining device comprising a bearing device disposed within the reaction chamber (21) and an upper lining (51) surrounding the upper portion of the lining wall of the reaction chamber (21); an annular baffle (512) encircling between the inner side wall of the reaction chamber (21) and the bearing device is disposed at the bottom end of the upper lining (51); and a plurality of strip-shaped through holes (511) extending through the thickness thereof are uniformly arranged on the upper surface of the annular baffle (512). The reaction chamber satisfies the requirement of having a larger amount of air flow under the condition of low reaction chamber pressure, and also improves the symmetry and uniformity of plasma arrangement.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Provided are a mechanical chuck and a plasma machining device, the mechanical chuck comprising a base and a fixed assembly; the fixed assembly comprises a snap ring, an insulating ring and an isolating ring; the snap ring is used to press against the edge of a machined workpiece to secure the workpiece to the base; an orthographic projection of the isolating ring on the upper surface of the snap ring coincides with the upper surface of the snap ring; the insulating ring electrically insulates the snap ring from the isolating ring, and the inner peripheral wall of the insulating ring encloses a first recess with the portion inside the inner peripheral wall of the upper surface of the snap ring and the portion inside the inner peripheral wall of the lower surface of the isolating ring; and the outer peripheral wall of the insulating ring encloses a second recess together with the portion outside the outer peripheral wall of the upper surface of the snap ring and the portion outside the outer peripheral wall of the lower surface of the isolating ring. The mechanical chuck and plasma machining device of the present invention improve negative bias voltage produced on the upper surface of the machined workpiece without increasing radio-frequency power, thus increasing radio-frequency efficiency.
Provided are a bearing device and plasma processing apparatus, comprising a base, a base driving mechanism, a pressure ring and a check ring; the base is used to bear a machined workpiece; the base driving mechanism is used to drive the base to ascend to a processing position or descend to an unload position; the pressure ring is used to tightly press the edge area of the machined workpiece placed on the base when the base is in the processing position; the check ring surrounds the outer peripheral wall of the base and is located below the pressure ring; the opposing surfaces of the pressure ring and the check ring comprise a pair of guide ring surfaces, the guide ring surfaces tilting outward at the same angle relative to the center lines in the vertical direction of the base; and when the base driving mechanism drives the base to ascend, the pair of guide ring surfaces mutually contact and move toward each other so as to position the pressure ring and the base. The bearing device of the present invention directly positions the pressure ring and the base, thus improving positioning accuracy, simplifying the work flow and device structure, and reducing manufacturing costs.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/203 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
The present invention relates to a reaction cavity and a plasma processing apparatus, comprising a cavity, a dielectric window and a power supply unit. The dielectric window is arranged above the cavity and hermetically connected to the cavity, and the outside of the dielectric window is surrounded by multiple sets of coils at intervals along the vertical direction. The multiple sets of coils are loaded by the power supply unit. The reaction cavity and plasma processing apparatus provided by the present invention can make the plasma uniformly distribute in the reaction cavity and increase the plasma density therein, thereby improving the uniformity of the process and ionization efficiency. Meanwhile, The reaction cavity and plasma processing apparatus provided by the present invention can also increase the effective power for exciting plasma, and lower the temperature rising extent and temperature gradient of the dielectric window during the process, thereby, preventing the dielectric window from fracturing and extending the service life thereof.
C23C 16/452 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before introduction into the reaction chamber, e.g. by ionization or by addition of reactive species
A magnetron (100) and a magnetron sputtering device, comprising an inner magnetic pole (120) and an outer magnetic pole (130) with opposite polarities. Both the inner magnetic pole (120) and the outer magnetic pole (130) comprise multiple spirals (122, 124, 126, 132, 134, 136). The spirals (132, 134, 136) of the outer magnetic pole (130) surround the spirals (122, 124, 126) of the inner magnetic pole (120), and a gap (140) exists therebetween. In addition, the gap (140) has different widths in different locations from a spiral center to an edge. Moreover, both the spirals (132, 134, 136) of the outer magnetic pole (130) and the spirals (122, 124, 126) of the inner magnetic pole (120) follow a polar equation: r=a×θn+b×(cosθ)m+c×(tanθ)k+d, 0≤n≤2, 0≤m≤2, c=0 or k=0. Because the gap (140) between the inner magnetic pole (120) and the outer magnetic pole (130) has the different widths in a spiral discrete direction, width sizes of the gap (140) in the different locations can be changed to control magnetic field strength distribution in a plane, thus adjusting uniformity of a membrane thickness.
An electrostatic chuck, a chamber and a fabrication method of the electrostatic chuck. The electrostatic chuck comprises a chuck base (10). A heater (20) and an insulation layer (30) are arranged above the chuck base (10). The insulation layer (30) is arranged above the heater (20). An electrode used for generating electrostatic attractive force is arranged inside the insulation layer (30). The electrostatic chuck comprises a heat insulation layer sheet. The heat insulation layer sheet is stacked between the chuck base (10) and the heater (20) to form a heat insulation layer (40). Accordingly, also provided is the chamber. The electrostatic chuck, the chamber and the fabrication method of the electrostatic chuck effectively overcome problems that flatness of a heat insulation adhesive layer is difficult to be ensured and a vacuum leak is easy to occur, and meanwhile, can reduce processing complexity.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A chamber, which is used for semiconductor processing technology and comprises a cavity body (41) and an isolating window (20), wherein the cavity body is in the shape of a barrel, and the upper end thereof is an opening end; and the isolating window is arranged at the opening end of the cavity body and enables the chamber to keep airtight. The chamber also comprises an isolating window fixing structure (10) which is used for fixing the isolating window to the opening end of the cavity body. The isolating window fixing structure comprises a first fixing portion (11) and a second fixing portion (12) which are connected to each other, wherein the first fixing portion is connected and fixed to an edge region of the upper surface of the isolating window; and the second fixing portion is connected and fixed to the cavity body. The isolating window is firmly fixed to the cavity body, so that the displacement of the isolating window in a vertical direction and a horizontal direction is limited, thereby avoiding the problem of fracture caused by the fact that the isolating window is in collision with the cavity body due to displacement. By using the isolating window fixing structure, the isolating window can be supported and fixed without using a traditional resin cushion block, thereby avoiding the problem that the isolating window is unevenly stressed and is easily damaged due to the thermal deformation of the resin cushion block.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
26.
CASSETTE POSITIONING DEVICE AND SEMICONDUCTOR PROCESSING APPARATUS
Provided are a cassette positioning device and a semiconductor processing apparatus. The cassette positioning device comprises a positioning base plate (21), a rotary positioning plate (22) and a supporting post (23). The positioning base plate (21) is arranged horizontally and connected to a lifting device (31). The rotary positioning plate (22) is arranged on the positioning base plate (21) and has one end rotatably connected to one end of the positioning base plate (21). A positioning component is arranged on the rotary positioning plate (22). The supporting post (23) is arranged below the rotary positioning plate (22), and can move relative to the positioning base plate (21) in the vertical direction, so that when the supporting post (23) rises to a preset highest position relative to the positioning base plate (21), the rotary positioning plate (22) is pushed against by the supporting post (23) and rotated to a position inclined with respect to the positioning base plate (21); when the supporting post (23) is located at a preset lowest position, the rotary positioning plate (22) is stacked on and parallel to the positioning base plate (21). By means of the cassette positioning device and the semiconductor processing apparatus, all wafers in a cassette (33) can have identical positions in the horizontal direction, so that wafers fetched by a mechanical arm are all located at a unique designated position on the mechanical arm.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
27.
PROCESS CHAMBER AND SEMICONDUCTOR PROCESSING APPARATUS
Provided in the present invention are a process chamber and a semiconductor processing apparatus. The process chamber comprises a reaction compartment, an air intake system, and a chip transfer apparatus. The reaction compartment is arranged within the process chamber and is used for processing chips. The air intake system is used for providing the reaction compartment with a process gas. The chip transfer apparatus is used for transferring chips into the reaction compartment. A backing ring component is arranged within the reaction compartment. The structure of the backing ring is arranged such that formed between same and an inner sidewall of the reaction compartment is a uniform flow chamber, which is used for uniform delivery of the process gas coming from the air intake system into the reaction compartment via the uniform flow chamber. The process chamber and the semiconductor processing apparatus provided in the present invention allow for an increase in the speed at which the process gas enters the reaction compartment, in the accuracy of controlling the flow of the process gas participating in a process, and in the distribution uniformity of the process gas in the reaction compartment.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
28.
PROCESS CHAMBER AND SEMICONDUCTOR PROCESSING APPARATUS
Provided in the present invention are a process chamber and a semiconductor processing apparatus. The process chamber comprises at least two reaction compartments, at least two sets of mutually independent air intake systems, and a chip transfer apparatus. The at least two reaction compartments are arranged within the process chamber and are distributed evenly in the circumferential direction thereof, and each reaction chamber constitutes therein an independent process environment. The air intake systems deliver in a one-to-one correspondence a process gas to the reaction compartments. The chip transfer apparatus is used for transferring chips into the reaction compartments. The process chamber and the semiconductor processing apparatus provided in the present invention allow for two or more processes to be carried out simultaneously in a single process chamber, thus not only is the process chamber structurally compact and small in footprint, but also obviated is the need to redesign the structure of a transfer chamber, thus allowing for reduced costs for manufacturing the apparatus.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
C23C 14/56 - Apparatus specially adapted for continuous coatingArrangements for maintaining the vacuum, e.g. vacuum locks
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
29.
BOTTOM ELECTRODE APPARATUS AND PLASMA PROCESSING DEVICE
A bottom electrode apparatus and a plasma processing device. The bottom electrode apparatus comprises a bearing member (201) for bearing a machined workpiece (206). The bearing member (201) is manufactured by using a conductive material, and an electric field intensity adjusting portion (202) is formed on an upper surface of the bearing member (201); the position of the electric field intensity adjusting portion (202) is corresponding to a compensation region for electric field intensity on the upper surface of the bearing member (201), and a manifestation of the electric field intensity adjusting portion (202) is corresponding to a compensation direction of the electric field intensity. With height differences between regions on the upper surface of the bearing member (201), that is, different distances from positions on the upper surface of the bearing member to the ground, electric field intensities of different regions on the upper surface of the bearing member (201) are adjusted, and differences between electric field intensities of the regions are compensated, so that distribution of plasmas relative to different regions of the machined workpiece (206) borne on the upper surface of the bearing member (201) tends to be uniform, thereby improving the uniformity of the process and the process result.
An etching method for controlling the micro-loading effect of the depth of shallow trenches comprises the following steps: etching the mask layers on the wafer entering a process chamber, until the openings on the wafer contact with the Si substrate of the wafer; feeding deposition gases into the process chamber to carry out deposition reaction, in order to deposit a layer of polymer-like film preventing from thickness etching; feeding inert gases into the process chamber and processing the polymer-like film under the condition of plasma excitation; carrying out a shallow trenching etching process on the wafer till the predetermined depth. It can effectively reduce or eliminate the micro-loading effect of etching depth during the etching of the trenches, need no additional processes with simple operation and relatively short elapsed-time, and furthermore can adjust with great flexibility by controlling the process parameter, such as time, for special equipment process.
A plasma etching device and method. The plasma etching device comprises: a comprehensive process cavity (300), comprising a deposition reaction cavity (500) used for depositing a layer of film (4) on the surface of a mask (2); an etching reaction cavity (600), used for etching a substrate (10), wherein the etching stops when the film (4) is totally consumed; a substrate conveying apparatus, used for conveying the substrate (10), so that the substrate (10) alternately enters the deposition reaction cavity (500) to deposit the film (4) and enters the etching reaction cavity (600) to perform etching, till the shape and appearance of the substrate (10) after etching reaches a required etching depth. The plasma etching device and method not only has a high etching rate, but also can increase an etching selection ratio of the substrate (10) to the mask (2).
Provided is a shielding structure for a reaction chamber. The structure is disposed within the reaction chamber and comprises a barrier and a shield. The shield is provided along the inner wall of the reaction chamber, and at least one notch penetrating through the shield in axial direction is provided on the shield, with each notch configured with a barrier provided opposite thereto; the projection of the barrier on the plane where the notch is located covers the notch; and the distance from the inner surface of the barrier to the centre of the reaction chamber is not equal to the distance from the inner surface of the shield to the centre of the reaction chamber, so that a transfer channel for radio frequency energy is formed between the barrier and the shield. The shielding structure provided in the present invention can prevent sputtered particles and/or charged ions from bombarding the inner wall of the reaction chamber, avoid the formation of a closed loop by the metal layer deposited by sputtered particles, and avert the particle pollution caused by the peeling of sputtered particles. In addition, the shielding structure provided in the present invention can also reduce the requirements of processing accuracy, and decrease costs in manufacture and installation.
A rotary table positioning device, a load transmission system and a plasma processing device. The rotary table positioning device comprises a rotary table (50), an in-position detection unit and an original-point detection unit. The in-position detection unit comprises a first identification module and a first detection module. The first identification module is used for identifying the position of a work station on the rotary table, and the first detection module is used for judging whether the work station reaches a pre-set position by detecting the first identification module. The original-point detection unit comprises a second identification module and a second detection module. The second identification module is used for identifying an original-point position, and the second detection module is used for judging whether the work station reaches the original-point position by detecting the second detection module. The provided rotary table positioning device, load transmission system and plasma processing device can learn whether an abnormal position appears in the work station of a rotary table, which can not only guarantee a normal working process, but can also avoid the occurrence of mechanical failures, so that the security and stability of plasma processing can be improved.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
34.
IMPEDANCE MATCHING METHOD AND IMPEDANCE MATCHING SYSTEM
An impedance matching method and impedance matching system, used for matching output impedance with load impedance of a radio-frequency pulse power supply. The impedance matching method comprises the following steps: S1, collecting pulse output signals of the radio-frequency pulse power supply, and according to the pulse output signals, determining whether the radio-frequency pulse power supply is currently outputting radio-frequency power signals, and if yes, then performing S2, and if not, then performing S3; S2, matching the output impedance with the load impedance of the radio-frequency pulse power supply starting from the current match position, marking a matched match position as the current match position, and then go back to S1; S3, keeping the current match position unchanged; and repeating S1 and S3 until the process ends. The impedance matching method and impedance matching system can improve the impedance matching rate, solving the problem of being unable to achieve impedance matching in the whole process.
A substrate etching method includes the following steps: step of a round corner basic shape etching: feeding etching gas into a reaction chamber and turning on an excitation power supply and a bias voltage power supply, thereby forming the corner basic shape of a groove sidewall top on the boundary of a mask-covered area and a non mask-covered area on the substrate; step of a groove depth etching: keeping feeding the etching gas to the reaction chamber while keeping the excitation power supply and the bias voltage power supply on or keeping the excitation power supply on alone, thereby etching the groove to a predetermined depth so that the projection of the groove on the plane perpendicular to the groove length presents such a shape that the sidewall top of the groove is a round angle. The etching gas is gas mixture comprising at least one of fluorocarbon type or hydrofluorocarbons type gas, oxygen, and fluorine type gas free of carbon and hydrogen. The substrate etching method not only forms a sidewall profile having a smooth round angle on the top of the sidewall, but also increases the etching degree and the etching ratio.
Provided are a precleaning chamber and a semiconductor processing device, comprising a chamber body, a top cover, and a carrying unit; the top cover is provided at the top of the chamber body; the carrying unit is provided inside of the chamber body in an area close to the bottom and is used to carry a wafer; an ion filtering unit is provided above the carrying unit in the chamber body, the ion filtering unit being used to filter ions in plasma as plasma moves from the upper portion of the chamber body toward the carrying unit. The precleaning chamber provided in the present invention can filter the ions in plasma as the plasma moves from the upper portion of the chamber body toward the carrying unit, thereby preventing the adverse effect of ions in the plasma on Low-k material and enhancing product performance.
The present invention provides a radio frequency power supply system. The radio frequency power supply system comprises a radio frequency power supply, and an automatic impedance matcher electrically between the radio frequency power supply and a plasma chamber. The frequency of the radio frequency power supply can be adjusted between the minimum preset frequency and the maximum preset frequency, and by means of adjustment of the frequency of the radio frequency power supply and adjustment of input impedance of a matching network by using the automatic impedance matcher, the input impedance of the matching network is equal to constant output impedance of the radio frequency power supply. The present invention further provides a method for performing impedance matching by using a radio frequency power supply system. By means of the radio frequency power supply system of the present invention, impedance matching can be achieved within a short time.
A reaction chamber (100) comprises a tray apparatus (110), a supporting framework (120) and a conduction unit (130). The tray apparatus (110) comprises a plurality of small trays (111) and a plurality of layers of large trays (112) arranged along the height direction of the reaction chamber (100), and each layer of the large trays (112) is circumferentially provided with a plurality of the small trays (111). The supporting framework (120) is arranged coaxial with the large tray (112); the conduction unit (130) is disposed between the supporting framework (120) and the small trays (111); when the supporting framework (120) or the tray apparatus(110) rotates about a longitudinal axis of the reaction chamber (100), the conduction unit (130) is used to drive the small trays (111) to rotate, in the radial direction of the large tray (112), about axes of the small trays (111) according to a predetermined speed. Further provided is an MOCVD device comprising the reaction chamber (100).
Provided is a glass substrate etching method, comprising the following steps: an oxidizing step: introducing oxygen into a reaction chamber and turning on an excitation power supply or both the excitation power supply and a bias power supply to oxidize a mask disposed on an etched surface of a glass substrate so as to form an oxide layer on the etched surface of the mask; an etching step: introducing an etching gas into the reaction chamber and starting both the excitation power supply and the bias power supply to etch the oxide layer and an area uncovered by the mask on the etched surface of the glass substrate, and stopping introduction of the gas into the reaction chamber and shutting down the excitation power supply and the bias power supply when the oxide layer is completely consumed; alternating the oxidizing step and the etching step until a predetermined etching depth is reached. The glass substrate etching method of the present invention not only has a higher etching rate, but also improves an etching selection ratio of the glass substrate relative to the mask.
The present invention provides a substrate etching method comprising the following steps: a main etching step, involving introducing etching gas and auxiliary gas into a reaction chamber, and activating an excitation power source and a bias voltage power source, in order to etch the substrate to a preset etching depth, wherein the auxiliary gas includes fluoride gas; an over-etching step, involving introducing the etching gas into the reaction chamber and activating an excitation power source and a bias voltage power source, in order to adjust the trench morphology of the substrate. The present invention provides a substrate etching method which not only increases the flexibility of the process, but also improves the flatness of the substrate at the bottom portion of trenches.
The present invention provides a heating cavity. A heating unit is disposed on a top of the heating cavity, and a piece transferring opening is disposed on an inner wall and is used for move a processed workpiece in or out. The heating cavity also comprises a bearing apparatus. The bearing apparatus comprises a lifting unit and a center apparatus. The center apparatus is located in the heating cavity, and a tip of the center apparatus is used for supporting the processed workpiece. The lifting unit is fixedly connected to the center apparatus, and is used for driving the center apparatus to be up and down, so as to drive the peak of the center apparatus to ascend from a loading and unloading region to a process region or descend from the process region to the loading and unloading region. A lower edge of the process region is located above an upper edge of the piece transferring opening, and an upper edge of the loading and unloading region is corresponding to an upper edge of the piece transferring opening. The present invention also provides a semiconductor processing device. The heating cavity and the semiconductor processing device provided in the present invention can uniformly heat a processed workpiece, so that temperature uniformity of the processed workpiece can be improved, and further, the quality of a process can be improved.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
42.
SUBSTRATE BEARING DEVICE AND PLASMA PROCESSING EQUIPMENT
Disclosed are a substrate bearing device (20) and plasma processing equipment. An upper surface of the substrate bearing device (20) is provided with a plurality of substrate mounting locations (201), and heat-exchange gas inlet passages (23, 24, 25) are arranged in the substrate bearing device (20) corresponding to each substrate mounting location (201), so as to guide a heat exchange gas to the upper surface of the substrate mounting location (201). The heat-exchange gas inlet passages comprise peripheral inlet passages and a middle inlet passage, wherein gas inlets (23, 24, 25) of the peripheral inlet passages and the middle inlet passage are all in communication with an external gas source; gas outlets of the peripheral inlet passages are arranged in the peripheral region of the upper surface of the substrate mounting location (201); and a gas outlet of the middle inlet passage is arranged in the middle region of the upper surface of the substrate mounting location (201). The substrate bearing device (20) and the plasma processing equipment can improve the heat exchange effect of the peripheral region of a processed workpiece (21), so that the temperature of the peripheral region and the middle region of the processed workpiece (21) can be enabled to tend to be uniform, and then the uniformity of the plasma processing technology can be improved.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Disclosed are a pallet (10) and a plasma machining apparatus. The pallet (10) is used for bearing a machined work-piece (14), and adjusting the temperature of the machined work-piece (14) by means of a heat exchange gas, wherein at least one bearing region of the machined work-piece is formed on the upper surface of the pallet (10); the shape and size of each bearing region of the machined work-piece are corresponding to the machined work-piece (14) to be borne; at least one recess (11) which is recessed towards the lower surface of the pallet is formed in a non-edge region (111) of each bearing region of the machined work-piece; the maximum diameter of a notch of each recess (11) is smaller than the minimum diameter of the borne surface of the machined work-piece (14) to be borne; intake holes (13) are distributed on the bottom surface of the recess (11); and the intake holes (13) are connected to a gas source of the heat exchange gas. The pallet (10) can not only improve the efficiency and uniformity of heat exchange between the heat exchange gas and the machined work-piece (14), but can also reduce the leakage amount of the heat exchange gas.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Provided is a ITO thin film sputtering process, comprising the following steps: S1, before charging a process gas into a reaction chamber, turning on a direct-current sputtering power source to apply a sputtering power to a target, and setting the output voltage of the direct-current sputtering power source to be a pre-set voltage value; S2, after a pre-set time, charging the process gas into the reaction chamber to accomplish glow-starting; and S3, applying a sputtering power to the target via the direct-current sputtering power source to perform the sputtering process. Also provided is an ITO thin film sputtering device applying the above-mentioned process steps to sputter an ITO thin film.
H01L 21/363 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using physical deposition, e.g. vacuum deposition, sputtering
45.
ITO THIN FILM SPUTTERING PROCESS METHOD AND ITO THIN FILM SPUTTERING DEVICE
An ITO thin film sputtering method comprises the following steps: (1) introducing process gas into a reaction chamber and setting pressure of the process gas in the reaction chamber to be higher than preset pressure that can enable glow discharge of the process gas; (2) enabling a direct current sputtering power supply, exerting sputtering power on a target material and restricting output voltage of the direct current power supply so that the output voltage is less than or equal to a preset voltage value; (3) reducing the pressure of the process gas in the reaction chamber to be lower than the preset pressure, and using the direct current sputtering power supply to exert the sputtering power on the target material to perform sputtering. Also provided is an ITO thin film sputtering device based on the ITO thin film sputtering method.
Provided are a manipulator and a semiconductor device. The manipulator comprises a base plate (11), a first adjusting unit and a second adjusting unit. A wafer bearing area (15) is formed on an upper surface of the base plate (11), and a shape and a size of the wafer bearing area (15) correspond to a wafer to be born. The first adjusting unit and the second adjusting unit are arranged relative to each other on the upper surface of the base plate (11), and are respectively located at outer sides of two side edges of the wafer bearing area (15). The first adjusting unit and the second adjusting unit are used for adjusting a position of the wafer arranged on the base plate (11) so that the wafer is located in the wafer bearing area (15). The manipulator not only can prevent the wafer from falling off the manipulator, but also can improve process efficiency and reduce a device use cost.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
Provided is a substrate etching method, comprising N times of substrate etching steps. In each time of substrate etching step, an etching gas is introduced into a reaction chamber, and an excitation power supply and a bias power supply are turned on to etch a substrate to a predetermined etching depth, where N is an integer greater than or equal to 2. It also comprises a plasma treatment step after the first time of substrate etching step and before the Nth time of substrate etching step. In the plasma treatment step, the introduction of the etching gas into the reaction chamber is stopped, simultaneously a treatment gas is introduced into the reaction chamber, and the bias power supply is turned off, the treatment gas being used for clearing away a part of reaction byproduct accumulated at the side wall of the substrate. The substrate etching method provided in the present invention not only can simplify the technological process, but also does not need to make any changes to an etching device on the premise of obtaining a substrate etching morphology with an ideal depth-to-width ratio, thereby being capable of reducing the manufacturing cost of devices.
A deep silicon etch method comprises: a deposition step (S101), generating a protection layer to protect an etch side wall; an etch step (S102), etching an etch bottom and the etch side wall; and repeating the deposition step (S101) and the etch step (S102) until the whole deep silicon etch process is finished; and further comprises a bottom smoothing step (S103), the bottom smoothing step (S103) being: performing plasma processing by using a fluoride gas to remove polymers generated on the etch bottom because of deposition, a process pressure used in the bottom smoothing step (S103) being less than a process pressure used in the etch step (S102), and the bottom smoothing step (S103) being performed at least once in the whole deep silicon etch process. By means of the deep silicon etch method, in the deep silicon etch process, polymers on the etch bottom are suppressed from gradually increasing, and micro masks or silicon grass is suppressed from generating, so as to improve an etch speed and a selection ratio of the deep silicon etch, and improve the roughness of the etch bottom.
A magnetron and a magnetron sputtering device. The magnetron comprises an external magnetic pole (22) and an internal magnetic pole (21) which are opposite in polarities. On the radial section perpendicular to the magnetron, the internal magnetic pole (21) is in an asymmetric closed ring formed by two sections of a helix line connected in series end to end. The helix line complies with the following polar coordinate equation: r=a*θn+b*(cosθ)m+c*(tanθ)k+d, where r and θ are polar coordinates, n, m and k are indexes of θ, cosθ and tanθ respectively, and -2
A plasma device and a reaction chamber (100) thereof. The reaction chamber (100) comprises a cavity body (1), coils (2) and a plurality of magnets (3). A reaction cavity (11) is provided in the cavity body (1). The coils (2) are arranged around the peripheral wall of the cavity body (1). The plurality of magnets (3) are provided outside the cavity body (1) and arranged in the circumferential direction of the cavity body (1) at intervals, the N poles or the S poles of the plurality of magnets (3) facing the same direction, the N pole of each magnet (3) being opposite to the S pole thereof in direction. In the technical process of cleaning a wafer, the magnets (3) can attract plasma formed by process gases to move towards the edge of the reaction cavity (11), thereby reducing the plasma density at the centre of the reaction cavity (11), increasing the plasma density at the edge of the reaction cavity (11), and improving the uniformity of plasma distribution, so as to uniformly etch the wafer on a base.
Provided is an electrostatic chuck, comprising a chuck for bearing a to-be-processed workpiece (13), and a base (5); a heat insulation assembly (8) is disposed between the chuck (14) and the base (5); the heat insulation assembly (8) comprises an upper annular plate (25), a lower annular plate (27), and an expandable heat insulation ring (22); the upper annular plate (25) and the lower annular plate (27) are both annular plates, and are oppositely disposed in the axial direction of the electrostatic chuck; the expandable heat insulation ring (22) is a hollow thin-walled tube structure, and is fixed between the upper annular plate (25) and the lower annular plate (27); the axial direction of the expandable heat insulation ring is consistent with that of the upper annular plate (25) and the lower annular plate (27), such that the expandable heat insulation ring (22) can adapt to the deformation of the heated chuck and the base (5). In addition, the electrostatic chuck is easy to process and replace, thus reducing the use cost of the electrostatic chuck.
C30B 19/08 - Heating of the reaction chamber or the substrate
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Disclosed is a physical vapor deposition apparatus, comprising: a reaction chamber, a substrate support component, a DC power supply, and a radio frequency power supply; the substrate support component is disposed at the bottom of the reaction chamber opposite a sputtering target; the DC power supply is coupled to the sputtering target; a radio frequency feed component is coupled to the sputtering target, and comprises a distribution ring and a plurality of distribution bars disposed alternately around the periphery of the distribution ring; the distribution ring is coupled to the radio frequency power supply, and is coupled to the sputtering target via the distribution bars. The physical vapor deposition apparatus in an embodiment of the present invention reduces the negative bias generated on the target, thus reducing the damage to a substrate or wafer, and remarkably improves the deposition rate, thus improving processing efficiency.
Provided is a substrate etching method, comprising the following steps: inputting an etching gas of a mixture of chlorine and a chloride gas into a reaction chamber; applying an excitation power to the reaction chamber, so as to enable the etching gas to form a plasma; and applying a bias power to a substrate to be processed, so as to enable the plasma to etch the substrate to be processed. The substrate etching method can reduce or even avoid needles formed at the bottom of a gallium nitride (GaN) slot, thereby improving the process quality.
A substrate etching method comprises the following steps: a deposition operation, for depositing a polymer on a side wall of a silicon groove; an etching operation, for etching the side wall of the silicon groove; repeating the deposition operation and the etching operation at least twice. In the process of completing all cycles of the etching operation, the chamber pressure of a reaction chamber is decreased from a preset highest pressure to a preset lowest pressure according to a preset rule. The substrate etching method can avoid the problem of damaging the side wall, thereby making the side wall smooth.
A substrate treatment system is provided. The substrate treatment system comprises a degassing chamber, a gas transmission unit (10) and a gas treatment device, wherein the degassing chamber comprises a support member (31) located in the degassing chamber use for supporting a substrate, the gas transmission unit (10) comprises an inlet use for gas and one or more outlet hermetically connected with the degassing chamber; the gas treatment device (10) is connected with the outlet of the gas transmission unit (10) and located above the support member (31) for heating gas flowing out from the outlet of the gas transmission unit (10) and introducing the heated gas into the degassing chamber, the substrate (1) is heated by the gas in the degassing chamber in heat conduction manner. The substrate treatment system is able to improve heat emissivity coefficient of a surface of the substrate influenced on heating temperature, thereby achieving heating compatibility of different substrates.
Disclosed are a tray apparatus, a reaction chamber, and an MOCVD device comprising the reaction chamber. The tray apparatus comprises a large tray, a rotating shaft, a small tray, and a supporting disk. The rotating shaft is connected to the center of the large tray and drives the large tray to rotate about the rotating shaft. The large tray is provided with a tray groove for placing the small tray. The supporting disk is located below the large tray. A sliding mechanism is provided between the supporting disk and the small tray, so that when revolving along with the large tray, the small tray spins under the function of the sliding mechanism. Compared to a composite rotation mechanism in the prior art that combines revolution and spinning and is achieved through a complex air path structure, the tray apparatus, the reaction chamber and the MOCVD device that are provided by the present invention have a more compact structure, is easier to process and install, and is also more convenient to maintain and use.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
A plasma processing apparatus comprises a reaction chamber (20), an excitation radio-frequency power source (13), a direct-current power source (24), an upper electrode, and a chip support device disposed in the reaction chamber and at a position relative to the upper electrode, the upper electrode being connected to the excitation radio-frequency power source to generate plasma (10) in the reaction chamber. The chip support device comprises a tray (21) for carrying a chip and a chuck (23), a tray electrode is provided in the tray, the tray is placed on the chuck and is electrically insulated from the chuck, the tray and the chuck are both electrically insulated from the plasma, the tray electrode is electrically connected to a positive output terminal or a negative output terminal of the direct-current power source, a chuck electrode is provided in the chuck, and the chuck electrode is grounded, so that a voltage difference exists between the tray and the chuck and exists between the tray and the chip. The plasma processing apparatus is advantageous in being easy to operate, having high reliability, a simple structure and a low cost, and being not easily damaged.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
A substrate etching method and a substrate processing device. The substrate etching method comprises: S1: placing a substrate to be processed in a reaction chamber; S2: inputting etching gas into the reaction chamber; S3: turning on an excitation power supply to generate plasma in the reaction chamber; S4: turning on a bias power supply to apply bias power to the substrate; S5: turning off the bias power supply, and meanwhile, beginning to input deposition gas into the reaction chamber; S6: stopping inputting deposition gas into the reaction chamber, and meanwhile, turning on the bias power supply; S7: repeating steps S5-S6, until the etching process is completed. In the whole etching process, the etching operation is always performed, and the deposition operation is performed sometimes. Therefore, during the deposition operation, the plasma in the reaction chamber can etch away at least a part of deposited polymers formed by the deposition operation on a side wall of an etched section, so that the side wall of the etched section of the substrate is smooth.
Provided are a wafer support apparatus and a semiconductor processing device having same. The wafer support apparatus includes a chuck, wherein the chuck includes a mobile part and a chuck body with a hollow cavity, the top wall of the chuck body is provided with a first through-hole, the mobile part is housed in the hollow cavity, and the upper surface of the mobile part is provided with a protrusion part corresponding to the first through-hole; a tray, wherein the tray is provided on the chuck body, the tray is provided with a second through-hole corresponding to the first through-hole for housing a wafer, with the diameter of the upper end of the second through-hole being greater than the diameter of the wafer, and the diameter of the lower end of the second through-hole being less than the diameter of the wafer; and a lift assembly, wherein the lift assembly is connected to the mobile part of the chuck and used for driving the mobile part to lift in the hollow cavity so that the protrusion part contacts with or separates from the wafer. The wafer support apparatus and semiconductor processing device provided in the present invention performs direct temperature control on a wafer through the mobile part of the chuck, thus being able to control the temperature of the wafer rapidly and effectively, improving the temperature uniformity of the wafer and improving the process effects.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
60.
SUBSTRATE PROCESSING DEVICE AND CHAMBER APPARATUS THEREOF
Disclosed are a substrate processing device and a chamber apparatus thereof. The chamber apparatus includes: a chamber body which is defined therein with a processing chamber; a transparent medium window which is provided inside the processing chamber and the circumference of which is connected to the inner perisporium of the chamber body so as to space the processing chamber into an upper chamber and a lower chamber; a heating component provided at the top in the upper chamber; a support bench provided inside the lower chamber, the upper surface of the support bench being used for supporting a substrate and being opposite to the heating component; and a heat-evening plate provided inside the lower chamber and above the support bench. The chamber device according to the embodiments of the present invention can even the heat generated by the heating lamp and then conduct same to a substrate by means of heat radiation, heat convection and so on, thereby being able to heat the substrate evenly.
C23C 14/02 - Pretreatment of the material to be coated
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
61.
CHAMBER DEVICE AND PLASMA PROCESSING APPARATUS HAVING SAME
Proposed are a chamber device and a plasma processing apparatus having same. The chamber device comprises: a chamber body with a chamber defined therein; n radio frequency electrode plates, wherein each radio frequency electrode plate is slantwise provided inside the chamber relative to the horizontal direction and is insulated from the chamber body; a carrier plate unit connected to the ground and including n carrier plates, wherein the carrier plate is provided inside the chamber and the quantity thereof is the same as the quantity of the radio frequency electrode plates, the carrier plates and the radio frequency electrode plates are provided substantially in parallel in one-to-one correspondence, and each carrier plate has a wafer bearing surface provided opposite to the radio frequency electrode plate and used for bearing a wafer, wherein n is an integer greater than or equal to 1. The chamber device according to the present invention can significantly reduce or even completely avoid particles produced in the process and particles peeling off from the radio frequency electrode plates from dropping on the surface of the wafer after operating for a long time, and therefore, the quality of the processed wafer can be improved significantly. Moreover, the entire chamber device is compact in structure and has a high capacity.
C23C 16/507 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/54 - Apparatus specially adapted for continuous coating
62.
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (China)
BEIJING NMC CO., LTD. (China)
Inventor
Yin, Haizhou
Zhu, Huilong
Luo, Zhijiong
Abstract
The present invention provides a manufacturing method for a semiconductor structure. The method comprises: providing an SOI substrate, and forming a gate structure on the SOI substrate; etching an SOI layer and a BOX layer of the SOI substrate at two sides of the gate structure, so as to form a groove exposing the BOX layer, a part of the groove entering the BOX layer; forming a flank wall at the sidewall of the groove; and forming a metal layer covering the flank wall in the groove, the metal layer contacting the SOI layer below the gate structure. Correspondingly, the present invention further provides a semiconductor structure formed with the foregoing method. In the manufacturing method and the semiconductor structure provided in the present invention, when a semiconductor device is working, the capacitance between a metal layer and a bulk-silicon layer of an SOI substrate is reduced, so as to facilitate promotion of performances of the semiconductor device.
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (China)
BEIJING NMC CO., LTD. (China)
Inventor
Yin, Haizhou
Zhu, Huilong
Luo, Zhijiong
Abstract
The present invention provides a method for manufacturing a semiconductor structure. The method comprises: providing an SOI substrate, and forming a gate structure on the SOI substrate; etching an SOI layer and a BOX layer of the SOI substrate at two sides of the gate structure, so as to form a trench for exposing the BOX layer, the trench partially entering the BOX layer; forming a metal side wall at a sidewall of the trench, the metal side wall being in contact with the SOI layer below the gate structure; forming an insulation layer for filling a part of the trench, and forming a dielectric layer for covering the gate structure and the insulation layer; etching the dielectric layer to form a first contact hole for exposing at least a part of the insulation layer, and etching the insulation layer via the first contact hole, so as to form a second contact hole for exposing at least a part of the metal side wall; and filling the first contact hole and the second contact hole to form a contact plug, the contact plug being in contact with the metal side wall. The method provided by the present invention can improve the performance of the semiconductor device and reduce the processing difficulty.
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (China)
BEIJING NMC CO., LTD. (China)
Inventor
Yin, Haizhou
Zhu, Huilong
Luo, Zhijiong
Abstract
A semiconductor structure is provided. The structure comprises a substrate (100),a semiconductor basal body (250),a cavity (410),a gate stack, sidewalls (230), source/drain regions (500) and a contact layer (520),wherein the gate stack is located on the semiconductor basal body, the sidewalls are located on the side walls of the gate stack, the source/drain regions are embedded into the semiconductor basal body and are located on the both sides of the gate stack, the cavity is embedded into the substrate, and the semiconductor basal body hangs above the cavity. In the direction of the gate length, the thickness of middle of the semiconductor basal body is larger than that of both sides the semiconductor basal body. In the direction of the gate width, the semiconductor basal body is joined to the substrate, and the contact layer covers the exposed surface of the source/drain regions. A method for manufacturing the semiconductor structure is also provided. It is beneficial to reduce the contact resistance of the source/drain regions, improve the device performance, decrease the cost and simplify the process.
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
H01L 21/822 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
65.
EXHAUSTING METHOD, EXHAUSTING APPARATUS AND SUBSTRATE PROCESSING DEVICE
An exhausting method, an exhausting apparatus and a substrate processing device. The exhausting method comprises the following steps: (1) setting at least two exhausting ports for a substrate processing chamber, and enabling the exhausting rates of the exhausting ports to be separately controlled; and (2) enabling the exhausting ports to exhaust outward at different exhausting rates. The exhausting apparatus comprises at least two exhausting ports connected to a substrate processing chamber. The exhausting rates of the exhausting ports may be separately controlled. The substrate processing device comprises a substrate processing chamber and the exhausting apparatus.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
66.
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (China)
BEIJING NMC CO., LTD. (China)
Inventor
Yin, Haizhou
Zhu, Huilong
Luo, Zhijiong
Abstract
Provided are a semiconductor structure and a method for manufacturing same. The method includes the following steps: providing a semiconductor substrate, and forming a gate dielectric layer, a metal gate, a CMP stop layer, and a polysilicon layer on the semiconductor substrate successively (S101); etching the gate dielectric layer, the metal gate, the CMP stop layer, and the polysilicon layer to form a gate stack (S102); forming a first inter-layer dielectric layer on the semiconductor substrate so as to cover the gate stack on the semiconductor substrate and portions at two sides thereof (S103); and performing planarization to expose the CMP stop layer and make it flush with the upper surface of the first inter-layer dielectric layer (S104). The enhancement of the CMP stop layer effectively reduces the height of the metal gate, thereby effectively reducing the capacitances of the metal gate and the contact area and optimizing the subsequent etching process of the contact via.
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (China)
BEIJING NMC CO., LTD. (China)
Inventor
Yin, Haizhou
Zhu, Huilong
Luo, Zhijiong
Abstract
Provided are a semiconductor structure and a manufacturing method thereof. The method includes the following steps: providing a substrate, with a first high k dielectric layer, an adjustment layer, a second high k dielectric layer and a metal gate being successively formed thereon; and etching the first high k dielectric layer, the adjustment layer, the second high k layer and the metal gate to form a gate stack. Correspondingly, also provided is a semiconductor structure. In the present invention, by way of setting the adjustment layer between the two high k dielectric layers, the semiconductor performance effectively avoids being reduced because of the reaction caused by direct contact between the adjustment layer and the metal gate.
A heat reflecting device (600) using for a semiconductor processing apparatus is provided. The semiconductor processing apparatus comprises a process chamber, the heat reflecting device (600) comprises at least one heat reflecting unit (604), each heat reflecting unit (604) has a reflecting surface capable of reflecting heat. The heat reflecting device (600) is disposed in peripheral of the process chamber to reflect heat toward to the process chamber. A semiconductor process apparatus is also provided, the heat reflecting device (600) is disposed in peripheral of the process chamber of the semiconductor process apparatus.
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (China)
BEIJING NMC CO.,LTD. (China)
Inventor
Yin, Haizhou
Zhu, Huilong
Luo, Zhijiong
Abstract
Provided is a method for manufacturing a semiconductor structure. The method comprises the following steps: providing a substrate (100) (S101); forming a gate dielectric layer (210) on the substrate (100) and forming a pseudo gate structure (220) on the gate dielectric layer (210) (S102), the pseudo gate structure (220) being formed by a polymeric material; injecting impurities into the substrates at the two sides of the pseudo gate structure (220) to form a source/drain region (110) (S103); removing the pseudo gate structure (220) (S104); annealing the source/drain region (110) to activate the impurities (S105); and forming a metallic gate (230) (S106). By using the polymeric material to manufacture the pseudo gate structure (220), the present invention greatly simplifies the etching process during subsequent removal of the pseudo gate structure (220), and reduces etching difficulty.
Disclosed are a gas inlet ring, a gas inlet component, a process chamber device and CVD equipment, wherein the gas inlet ring (10) comprises a ring body (101) respectively provided with a gas outlet groove (1011), a flow-equalizing groove (1012), gas feeding holes (1013) and inlet channels (1018); the gas outlet groove (1011) is formed on the outer peripheral surface of the ring body (101) along the peripheral direction of the ring body (101); the flow-equalizing groove (1012) is formed on the lower surface of the ring body along the peripheral direction of the ring body (101) and connected to the gas outlet groove (1011), the gas feeding holes (1013) penetrate the ring body (101) along the thickness direction of the ring body and are located on the inner side of the flow-equalizing groove (1012); the inlet channels (1018) are formed on the lower surface of the ring body (101) along the radial direction of the ring body (101); and each of the inlet channels (1018) connects at least one of the gas feeding holes (1013) to the flow-equalizing groove (1012). The gas inlet ring (10) has a simple structure and low cost, is convenient to manufacture, and can achieve a uniform distribution of gas.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
71.
SPUTTERING CHAMBER, PRE-WASH CHAMBER AND PLASMA PROCESSING DEVICE
A sputtering chamber, pre-wash chamber and plasma processing device; the sputtering chamber comprises a cavity (20), a target (25), a base and an induction coil (13); the target (25) is disposed at the top of the cavity (20) and is connected with a power supply (28); the base is disposed on the bottom of the cavity (20); and the induction coil (13) is disposed on the outer side of the cavity (20). The pre-wash chamber comprises a cavity (20), a top cover (25), a base and an induction coil (13); the top cover (25) is disposed at the top of the cavity (20), the base is disposed on the bottom of the cavity (20), and the induction coil (13) is disposed on the outer side of the cavity (20). The plasma processing device comprises the sputtering chamber and the pre-clean chamber.
Disclosed is a gas transmission device, comprising: a gas transmission passage, a reaction gas pipeline group used for feeding reaction gases and an isolation gas pipeline used for feeding an isolation gas not reacting with the reaction gases being disposed in the gas transmission passage; and at least one gas nozzle, the gas nozzle is disposed on the gas transmission passage, and each gas nozzle comprising multiple layers of air holes exhausting along the cross-sectional direction of the gas transmission passage. A top layer of air holes of the multiple layers of air holes is in communication with the isolation gas pipeline, Each layer of air holes below the top layer of air holes of the multiple layers of air holes is in communication with each pipeline in the reaction gas pipeline group in a matched manner. Further disclosed is a substrate treatment apparatus. The gas transmission device and the substrate treatment apparatus having the gas transmission device provided in the present invention can prevent deposition from occurring at the top lid and the tray bottom, and effectively prevent particle contamination incurred by peeling off of a thin film at the top lid and the tray bottom.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
73.
MAGNETRON SOURCE, MAGNETRON SPUTTERING DEVICE AND MAGNETRON SPUTTERING METHOD
Provided is a magnetron source, which comprises a target material, a magnetron located thereabove and a scanning mechanism connected to the magnetron for controlling the movement of the magnetron above the target material. The scanning mechanism comprises a peach-shaped track, with the magnetron movably disposed thereon; a first driving shaft, with the bottom end thereof connected with the origin of the polar coordinates of the peach-shaped track, for driving the peach-shaped track to rotate about the axis of the first driving shaft; a first driver connected to the first driving shaft for driving the first driving shaft to rotate; and a second driver for driving the magnetron to move along the peach-shaped track via a transmission assembly. A magnetron sputtering device including the magnetron and a method for magnetron sputtering using the magnetron sputtering device are also provided.
Provided is a metal organic chemical vapor deposition apparatus and a chamber assembly therefor. The chamber assembly comprises: a chamber comprising a reaction chamber comprising a gas inlet channel for supplying gas to the reaction chamber and a gas exhaust channel for exhausting gas from the reaction chamber; and a first support tray and a second support tray, disposed inside the reaction chamber, for supporting wafers, the wafer-supporting surface of the first support tray and the wafer-supporting surface of the second support tray being opposite each other. Disposing two wafer-supporting trays opposite each other in the reaction chamber greatly increases reaction chamber capacity and the gas utilization rate, thereby improving production efficiency and reducing production cost.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
75.
SUBSTRATE BEARING APPARATUS AND SUBSTRATE PROCESSING DEVICE USING SAME
Disclosed is a substrate bearing apparatus for bearing substrates, comprising at least one tray (71, 72, 73), wherein each tray (71, 72, 73) has two opposite tray surfaces for bearing substrates. Compared with current common substrate bearing apparatus of the same size, the substrate bearing apparatus can bear more substrate during processes, thus effectively increasing device production capacity and process gas utilization rate. Also disclosed is a substrate processing device using the substrate bearing apparatus.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
76.
CAVITY COMPONENT AND METAL-ORGANIC CHEMICAL VAPOR DEPOSITION DEVICE WITH SAME
A cavity component comprises: a cavity outer sleeve, forming an outer sleeve cavity by encircling the cavity; induction coils, enclosing the outside of the cavity outer sleeve; and a graphite sleeve, sleeved inside the outer sleeve cavity of the cavity outer sleeve. Also disclosed is a metal-organic chemical vapor deposition (MOCVD) device provided with the cavity component.
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Disclosed is a semiconductor device. The semiconductor device comprises: a reaction cavity, an absorption component, and an RF apparatus providing RF power for the interior of the reaction cavity; the absorption component is arranged inside and on the top of the reaction cavity, and is configured to absorb chips; an air inlet is disposed at the bottom of the reaction cavity, and the air inlet is a passage for drawing process gas into the reaction cavity. According to the present invention, the chips are absorbed on the absorption component arranged on the top of the reaction cavity with the coating process surface of the chip facing downward. This prevents particles generated during the coating process or particles stripped off from the upper board after running for an extended period of time from falling down to the surface of the chip, therefore enhancing the quality of the chip and avoiding possible impact on chip appearance.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/505 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
78.
VAPOUR CHAMBER AND SUBSTRATE PROCESSING EQUIPMENT USING SAME
The present invention provides a vapour chamber and substrate processing equipment using the same, wherein the vapour chamber comprises a central sub vapour chamber and at least one outer ring sub vapour chamber located around the central sub vapour chamber; thermal insulation parts are provided between the central sub vapour chamber and the outer ring sub vapour chamber and between two adjacent outer ring sub vapour chambers, so that the heat conduction between the adjacent sub vapour chambers can be effectively prevented or reduced by means of the thermal insulation parts. The vapour chamber and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.
C23C 14/22 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
A tray device for carrying processed substrates comprises a plurality of trays stacked in a longitudinal direction and with a certain distance between the adjacent trays. Also provided is a crystal membrane growth apparatus comprising a process chamber, a process gas transport system and an exhaust system, and within the process chamber is provided the abovementioned tray device for carrying substrates during the process.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A plasma processing apparatus includes a chamber (20) and a target (25) on the chamber (20). The surface of the target (25) is contacted with the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conduction sub-chamber (22), which are superposed. The first conduction sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conduction sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed in the surface of the coil during the sputtering process can be resolved by using the plasma processing apparatus.
Disclosed is a method of applying power to a target for magnetron sputtering process. The method comprises: 10) connecting a target (2) with a main power supply and a maintaining power supply respectively; 20) applying a certain main power in pulsed mode to the target (2) by the main power supply, and applying a certain maintaining power which is less than the main power to the target (2) by the maintaining power supply at least in the pulse interval time (t2) of the main power supply, so as to maintain the glow discharge process of the sputtering process in the pulse interval time (t2) of the main power. The method of applying power to a target not only ensures the stability and the controllability of the process, but also improves the ionized ratio of the metal remarkably. Also disclosed are a target power supply (8) which comprises a main power module (81) and a maintaining power module (82), and a semiconductor processing apparatus using the method of applying power to a target or the target power supply.
A method for removing the film contamination produced during the working process comprising cooling the part attached with film contamination to separate the attached film contamination from the part, wherein the contraction coefficient of the part is different from that of the film contamination. Also provided is a plasma enhanced chemical vapor deposition (PECVD) system for removing the film contamination produced during the working process.
C23C 16/513 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
C23C 16/54 - Apparatus specially adapted for continuous coating
83.
ROBOT ARM DEVICE AND SUBSTRATE PROCESSING SYSTEM COMPRISING THE SAME
A robot arm device and a substrate processing system comprising the robot arm device are disclosed. The robot arm device comprises a first double rocker mechanism with a first rocker (21) and a second rocker (22) and a second double rocker mechanism with a third rocker (23) and a fourth rocker (24). Both the first rocker (21) of the first double rocker mechanism and the third rocker (23) of the second double rocker mechanism are hinged to a base part (0) by their first ends, and the second rocker (22) and the fourth rocker (24) are respectively correspondingly hinged to the second end of the first rocker (21) and the second end of the third rocker (23). When the first rocker (21) and the third rocker (23) are driven by their driving parts and rotate around their respective first ends, both the second rocker (22) and the fourth rocker (24) drive an arm body (3) connected with them to slide along a first sliding rail (41) and a suitable angle is formed between the second rocker (22) and the fourth rocker (24). In this way, during the work of the device the two double rocker mechanisms do not reach the dead center position at the same time, thus improving the driving reliability of the device.
B25J 9/06 - Programme-controlled manipulators characterised by multi-articulated arms
B65G 49/07 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
84.
ROBOT ARM DEVICE AND SUBSTRATE PROCESSING SYSTEM COMPRISING THE SAME
A robot arm device and a substrate processing system comprising the robot arm device are disclosed. The robot arm device comprises a first rocker (21) hinged to the base part of the robot arm device by its first end and a second rocker (22) whose first end is hinged to the second end of the first rocker (21) by a first rotating shaft. When the first rocker (21) rotates around its first end, the second rocker (22) drives an arm body (5) connected with itself to slide along a sliding rail (7). The robot arm device further comprises a booster part which selectively drives the arm body (5) to slide forwards or backwards along the sliding rail (7). In this way, when the device is in a dead center position, the booster part drives the arm body (5) to slide forwards or backwards along the sliding rail (7), so that the angle between the first rocker (21) and the second rocker (22) is changed, and thus the robot arm device successfully passes through the dead center poison, improving the driving reliability of the device.
B25J 9/06 - Programme-controlled manipulators characterised by multi-articulated arms
B65G 49/07 - Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
A plasma-enhanced chemical vapor deposition (PECVD) system comprises a process module which has a housing, in which multiple process chambers (1 ) are provided. The housing of the process module is connected with a first vacuum system, and the reaction chamber body of each process chamber (1) is connected with a second vacuum system. The first vacuum system and the second vacuum system are independent of each other and can be adjusted separately.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
A solar battery with an amorphous silicon thin film and a manufacturing method thereof are provided. The solar battery comprises a glass base board (10), and at least a three-dimensional battery cell disposed on the glass base board (10), wherein the three-dimensional battery cell comprises a three-dimensional stick-up transparent conductive film (1) deposited on the glass base board (10), an amorphous silicon layer (8) and a metallic back electrode (5) deposited on the transparent conductive film (1) orderly. The method for manufacturing the solar battery includes steps: depositing a transparent conductive film (1) on a glass base board (10), photo etching and etching the transparent conductive film (1) to make it with three-dimensional stick-up shape, depositing an amorphous silicon layer (8) on the transparent conductive film (1) with three-dimensional stick-up shape, and depositing a metallic back electrode (5) on the amorphous silicon layer (8).
H01L 31/042 - PV modules or arrays of single PV cells
H01L 31/20 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor material
87.
ELECTROSTATIC CHUCK AND METHOD FOR REMOVING REMAINING CHARGES THEREOF
An electrostatic chuck is provided, which comprises a base (102) and electrodes (401,402) arranged in the base, the electrostatic chuck further comprises a charge release unit, the electrodes can be optionally connected with a power supply arranged outside the electrostatic chuck or the charge release unit in order to connect to the power supply to obtain electric energy during the process and connect to the charge release unit to release the remaining charges on the electrodes to remove the remaining charges on the work piece held on the electrostatic chuck during the charges are released. A method for removing the remaining charges on the electrostatic chuck is also provided, the method can thoroughly rapidly release the remaining charges on the electrodes and the wafer to eliminate the appearance of die bonding and scraping, so as to reduce the interrupt of the process, and improve the production efficiency and yield.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
88.
DEEP SILICON ETCHING DEVICE AND GAS INTAKE SYSTEM FOR DEEP SILICON ETCHING DEVICE
A deep silicon etching device includes a reaction chamber, a gas source cabinet, and the gas source cabinet is connected with the reaction chamber through two independently controlled gas paths. Wherein, the first gas path is used for leading the process gas for etching into the reaction chamber from the gas source cabinet. The second gas path is used for leading the process gas for depositing into the reaction chamber from the gas source cabinet. The mixture and delay problem of the process gas in the switching of the steps can be solved by this invention.
C23C 16/00 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
A deep silicon etching method includes firstly etching a silicon (300) surface (300a) uncovered by a photoresist layer (301) to form an etched surface (302) and sidewalls (303) substantially vertical to the etched surface (302), and further includes the following steps: a deposition step which is an isotropic deposition; a first etching step which is an anisotropic etching step; a second etching step which is an isotropic etching step; and cyclically repeating the deposition step, the first etching step and the second etching step until a predetermined etching depth is reached. The method does not require the use of a complex equipment such as a low frequency pulsed power or the like, and facilitates equipment maintenance and helps reduce equipment costs.
An etch endpoint control method is provided,which comprises: acquiring realtime optical interference detection spectrum lines, searching a wave peak signal and a wave valley signal in the optical interference detection spectrum lines to acquire an etch period of the current process,using the etch thickness required,the thickness of a wafer etched in one etch period and the etch period of the current process，an endpoint control is carried on the etch process.An etch endpoint control device is also provided.
A plasma processing device includes a first electrode plate (3), a second electrode plate (4), a matching device (8), a power distributor (9) and a power supply device (1). The first electrode plate (3) includes at least two sub-electrode plates (31, 32) insulated from each other; the power supply device (1) is connected with the power distributor (9) by the matching device (8); the power distributor (1) is connected with the first electrode plate (3) for inputting and distributing the power of the power supply device (1) to the each sub-electrode plates (31, 32); the power distributor (9) at least includes capacitors (C1, C2) and/or inductances (L1, L2). The plasma processing device distributes the power of the power supply device (1) into several portions correspond to the number of said sub-electrodes (31, 32) through the power distributor (9), and each portion of the power is inputted to the corresponding sub-electrode (31, 32) to acquire individual electric field distributing between each sub-electrode plate (31, 32) and the second electrode plate (4).
A plasma treatment device (5) comprises an outer shell (51) which is provided with a reaction chamber (52) in the interior, a bottom electrode which is arranged in the reaction chamber (52) and a cantilever support device (53) which goes through the outer shell (51) and which supports the bottom electrode. The cantilever support device (53) is pivotally arranged at the side wall of the outer shell (51) and can independently rotate in the outer shell (51). The plasma treatment device (5) further comprises a location device so as to selectively fix the relative position of the cantilever support device (53) and the outer shell (51).
A gas distribution device, a plasma processing apparatus using the gas distribution device and a method used for delivering gas into a reaction chamber of the plasma processing apparatus are provided. The gas distribution device (3) comprises three layers: an upper distribution plate (31), a middle distribution plate (32) and a lower distribution plate (33). Two gas delivery paths which are separated from each other are formed among the three layers of the distribution plates. As the two gas delivery paths are fully separated, easily reacted gases can enter the reaction chamber of the plasma processing apparatus by different delivery paths and the contact of the easily reacted gases in the gas distribution device is voided, thus eliminating the possibility of reaction of the gases before entering the reaction chamber. Meanwhile, as the two gas delivery paths are staggered, two paths of gases which enter the reaction chamber through different delivery paths can be mixed sufficiently.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A gas injection device equipped with a gas injection main unit for semiconductor processing apparatus. The said unit comprises a central air channel and at least a peripheral air channel along the axial direction. Each air channel comprises in sequence an admitting port, a gas passage, a vent hole, wherein the minimum area of each gas vent hole is smaller than the minimum area of the corresponding gas passage. The invention further discloses a semiconductor processing apparatus including the said gas injection device. The device and the apparatus can increase the injection speed of the process gas, make the gas distribution equably, and avoid the gas strike a light effectively. It has good effect applied in the bigger chamber.
A shielding ring (1) for a plasma processing device disposed around the periphery of a lower electrode comprises a conducting ring (10) with annular structure. A first series of perforations (12) penetrate through said conducting ring (10) in the direction of its thickness. A first insulating ring (20) penetrated in the direction of its thickness by a second series of perforations (22) is disposed upon and covers the upper surface of said conducting ring (10) in a position corresponding to said first perforations (12). The first perforations (12) and the second perforations (22) corresponding to the first perforations align to form passages.
A monitoring system of semiconductor process, includes: a continuum source; an intermittent mechanism; an optical path controller (15);an optical alignment device (13); a spectrograph (16); a data processing unit (17) and an arithmetic unit (18); light emitting from the continuum source enters into the semiconductor processing chamber (14) by the intermittent mechanism, the optical path controller (15) changes incident light into pulsed light by intermittent mechanism, and the optical path controller (15) controls the spectrograph (16) for collecting spectrum signal emitting from the semiconductor processing chamber (14), the data processingunit (17) and the arithmetic unit (18) are used for dealing data and confirm the end point of the process. It provides a monitoring method of the semiconductor process.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
97.
METHOD AND DEVICE FOR DETECTING ENDPOINT IN PROCESS
A method for detecting an endpoint in process, said method comprises the steps of: searching a peak or s flat of a spectrum signal, setting the peak or the flat as a inflexion; said peak is a spectrum signal which intensity is more than the intensity of its left and right signal; said flat is a spectrum signal that the intensity of its left signal is less than its intensity, and the intensity of its right signal fluctuates in the range of satisfactory. Time of a process endpoint is determinated according to the inflexion. A device for detecting an endpoint in process is further disclosed.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/66 - Testing or measuring during manufacture or treatment
98.
PLASMA PROCESSING EQUIPMENT AND GAS DISTRIBUTION APPARATUS THEREOF
A gas distribution apparatus for a plasma processing equipment is provided. The gas distribution apparatus includes a support plate (3) and a showerhead electrode (5) that are secured together parallelly to define a gas distribution chamber. A first gas distribution plate (4) is arranged in the chamber horizontally. On the upper surface of the gas distribution plate (4), at least one circumferential gas-flow groove (41) around its axis and several radial gas-flow grooves (42) connected with the circumferential gas-flow groove (41) are arranged. A plurality of axial viaholes (43) are formed in the circumferential gas-flow groove (41) and the radial gas-flow grooves (42). The gas distribution apparatus can achieve a uniform gas distribution in the plasma processing equipment.
A method for optimized dispatch of wafer, said method comprises: obtaining the amount of wafer and the process order of each wafer, which is needed in the system; according to the amount of wafer and the order process of each wafer, obtaining several moving routes of wafer by simulate calculating; said routes are moving sequence set of each wafer in the time; evaluating the several moving route of the wafer by process time efficiency of system, the maximum route of process time efficiency is used as the optimal route saved to dispatch alignment; dispatching each wafer by the route in the dispatch alignment.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
100.
GAS DISTRIBUTION SYSTEM AND SEMICONDUCTOR PROCESSING DEVICE USING THE GAS DISTRIBUTION SYSTEM
Provided is a gas distribution system for use in feeding process gases to reaction zones, which includes a gas supply section, a switching section and a flow control section connected sequentially. The gas supply section is used to provide process gases and to feed them to the switching section. The switching section is used to stop feeding process gases required in the current process to the flow control section and to turn to feeding process gases required in the next process when the current process and the next process are switched. The flow control section is an integrated flow controller and is used to control the flow of process gasesaccording to process requirements and to feed the process gases to reaction zones. Moreover, provided is a semiconductor processing device using the above gas distribution system.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
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