The present invention relates to a method for manufacturing a functional polymer by an anionic polymerization method. The method for manufacturing a polymer according to the present invention can economically manufacture a polymer having high chemical uniformity, and enables an anionic polymerization reaction even at a relatively high temperature compared to the prior art.
C08F 297/02 - Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
The present invention relates to a method for manufacturing functional polymers by anionic polymerization. The polymer manufacturing method according to the present invention can economically produce polymers having high chemical uniformity and enables an anionic polymerization reaction even at a relatively high temperature compared with the prior art.
C08F 112/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
The present invention relates to a method for manufacturing functional polymers by anionic polymerization. The polymer manufacturing method according to the present invention can economically produce polymers having high chemical uniformity and enables an anionic polymerization reaction even at a relatively high temperature compared with the prior art.
C08F 112/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
The present invention relates to a method for manufacturing functional polymers by anionic polymerization. The polymer manufacturing method according to the present invention can economically produce polymers having high chemical uniformity.
C08F 112/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
The present invention relates to a method for producing a functional polymer via anionic polymerization. The method for producing a polymer according to the present invention can economically produce a polymer having high chemical uniformity and enables an anionic polymerization reaction even at a relatively high temperature compared to the prior art.
C08F 112/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
The present invention relates to a method for manufacturing a functional polymer by anionic polymerization. The method for preparing a polymer according to the present invention can economically manufacture a polymer having high chemical uniformity, and enables an anionic polymerization reaction even at a relatively high temperature compared to the prior art.
C08F 112/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
The present invention relates to a method for preparing a functional polymer by using anionic polymerization. The method for preparing a polymer according to the present invention can economically prepare a polymer having high chemical uniformity, and enables an anionic polymerization reaction even at a relatively high temperature compared to that of a conventional method.
C08F 112/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
The present invention relates to a method for manufacturing functional polymers by anionic polymerization. The polymer manufacturing method according to the present invention can economically produce polymers having high chemical uniformity and enables an anionic polymerization reaction even at a relatively high temperature compared with the prior art.
C08F 112/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
A polishing slurry is disclosed which includes about 0.01 wt % to about 10 wt % of polishing particles, about 0.005 wt % to about 0.1 wt % of a dispersing agent, about 0.001 wt % to about 1 wt % of an oxide-polishing promoter including a pyridine compound, about 0.05 wt % to about 0.1 wt % of a nitride-polishing inhibitor including an amino acid or an anionic organic acid, and water. A method for manufacturing a display device including an active pattern disposed on a base substrate, a gate metal pattern including a gate electrode overlapping the active pattern, a planarized insulation layer disposed on the gate metal pattern, and a source metal pattern disposed on the planarized insulation layer is also disclosed.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
C09G 1/02 - Polishing compositions containing abrasives or grinding agents
A polishing slurry is disclosed which includes about 0.01 wt % to about 10 wt % of polishing particles, about 0.005 wt % to about 0.1 wt % of a dispersing agent, about 0.001 wt % to about 1 wt % of an oxide-polishing promoter including a pyridine compound, about 0.05 wt % to about 0.1 wt % of a nitride-polishing inhibitor including an amino acid or an anionic organic acid, and water. A method for manufacturing a display device including an active pattern disposed on a base substrate, a gate metal pattern including a gate electrode overlapping the active pattern, a planarized insulation layer disposed on the gate metal pattern, and a source metal pattern disposed on the planarized insulation layer is also disclosed.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
C09G 1/02 - Polishing compositions containing abrasives or grinding agents
A polishing slurry includes an abrasive material, a first oxide polishing promoter, a first nitride polishing inhibitor, and a second nitride polishing inhibitor. The first oxide polishing promoter includes a polymer-based oxide polishing promoter. The first nitride polishing inhibitor includes an anionic nitride polishing inhibitor. The second nitride polishing inhibitor includes at least one selected from a cationic nitride polishing inhibitor and a non-ionic nitride polishing inhibitor.
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
A polishing slurry for silicon, a method of polishing polysilicon, and a method of manufacturing a thin film transistor substrate, the slurry including a polishing particle; a dispersing agent including an anionic polymer, a hydroxyl acid, or an amino acid; a stabilizing agent including an organic acid, the organic acid including a carboxyl group; a hydrophilic agent including a hydrophilic group and a hydrophobic group, and water, wherein the polishing particle is included in the polishing slurry in an amount of about 0.1% by weight to about 10% by weight, based on a total weight of the slurry, a weight ratio of the polishing particle and the dispersing agent is about 1:0.01 to about 1:0.2, a weight ratio of the polishing particle and the stabilizing agent is about 1:0.001 to about 1:0.1, and a weight ratio of the polishing particle and the hydrophilic agent is about 1:0.01 to about 1:3.
H01L 27/12 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
H01L 27/32 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
13.
Abrasive particles, polishing slurry and method of fabricating abrasive particles
The present disclosure relates to abrasive particles, a polishing slurry and a fabricating method of the abrasive particles. The fabricating method of abrasive particles in accordance with an exemplary embodiment of the present disclosure includes preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor, preparing a basic solution, mixing the basic solution with the precursor solution and forming a precipitate, and washing abrasive particles synthesized by precipitation.
Provided are slurry for polishing cobalt and a substrate polishing method. The slurry includes an abrasive configured to perform the polishing, the abrasive comprising zirconium oxide particles, a dispersing agent configured to disperse the abrasive, and a polishing accelerator configured to accelerate the polishing. The polishing accelerator includes an organic acid containing an amine group and a carboxylic group. According to the slurry in accordance with an exemplary embodiment, a polishing rate of the cobalt may increases without using an oxidizing agent, and local corrosion defects on a surface of the cobalt may be suppressed.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/461 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
C09G 1/02 - Polishing compositions containing abrasives or grinding agents
Provided are a slurry for polishing tungsten and a method of polishing a substrate. The slurry according to an exemplary embodiment includes an abrasive configured to perform polishing and include particles having a positive zeta potential, a dispersant configure to disperse the abrasive, an oxidizer configured to oxidize a surface of the tungsten, a catalyst configured to promote oxidation of the tungsten, and a selectivity control agent configured to control a polishing selectivity and include an organic acid containing a carboxyl group. According to the slurry of the exemplary embodiment, a polishing selectivity between the tungsten and the insulation layer may be improved by suppressing a polishing rate of the insulation layer.
Provided is a method of manufacturing an abrasive particle including a mother particle and a plurality of auxiliary particles formed on a surface of the mother particle, and a method of manufacturing a polishing slurry in which the abrasive particle is mixed with a polishing accelerating agent and a pH adjusting agent.
A polishing slurry for tungsten and a substrate polishing method are disclosed. The polishing slurry includes an abrasive for performing polishing and having positive zeta potential, and a potential modulator for promoting the oxidation of the tungsten and for controlling the zeta potential of the abrasive.
C09K 13/00 - Etching, surface-brightening or pickling compositions
C09K 13/02 - Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H01L 21/461 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
B44C 1/22 - Removing surface-material, e.g. by engraving, by etching
C03C 15/00 - Surface treatment of glass, not in the form of fibres or filaments, by etching
C03C 25/68 - Chemical treatment, e.g. leaching, acid or alkali treatment by etching
C09G 1/02 - Polishing compositions containing abrasives or grinding agents
Provided are an abrasive particle including auxiliary particles formed on a surface of a mother particle, a polishing slurry prepared by mixing the abrasive particles with a polishing accelerating agent and a pH adjusting agent, and a method of manufacturing a semiconductor device in which an insulating layer is polished by the polishing slurry while using a conductive layer as a polishing stop layer.
Provided is a method of manufacturing an abrasive particle including a mother particle and a plurality of auxiliary particles formed on a surface of the mother particle, and a method of manufacturing a polishing slurry in which the abrasive particle is mixed with a polishing accelerating agent and a pH adjusting agent.
Disclosed are a polishing slurry used in a polishing process of tungsten and a method of polishing using the same. The slurry includes an abrasive for performing polishing and an oxidation promoting agent for promoting the formation of an oxide. The abrasive includes titanium oxide particles.
The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.
The present invention relates to a CMP slurry composition for tungsten polishing containing abrasives and polishing accelerators, wherein the abrasive comprises colloidal silica dispersed in ultrapure water and the polishing accelerator comprises aqueous hydrogen peroxide, ammonium persulfate, and ferric nitrate. The slurry composition does not cause a slurry discoloration problem and can be applied to a CMP process due to having excellent etch selectivity.
patents
