Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which with respect to a developer solution is changed by the action of the acid. The present invention employs the resist composition containing a compound (D0) that is represented by general formula (d0). In the formula, Rarrepresents an aromatic ring which may have a substituent. R01represents a chain saturated hydrocarbon group having 1 to 10 carbon atoms. R02represents a hydrogen atom or an optionally substituted chain saturated hydrocarbon group having 1 to 10 carbon atoms. R03represents a halogen atom. j represents an integer of 1 or more, valence permitting. k represents an integer of 1 or more, valence permitting. Yd0represents a divalent linking group or a single bond. m represents an integer of 1 or more, and Mm+ represents an organic cation having a valence of m.
C07C 65/21 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups
C07C 205/58 - Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by carboxyl groups having nitro groups and carboxyl groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton the carbon skeleton being further substituted by halogen atoms
The present invention provides: a resist composition which ensures high sensitivity and from which a resist pattern having good roughness-reducing properties can be formed; and a resist pattern forming method using said resist composition. The present invention relates to a resist composition which generates an acid when exposed and of which the solubility in a developer changes due to the action of the acid, the resist composition comprising: a main material component (A) of which the solubility in a developer changes due to the action of an acid; an acid generator component (B) that generates an acid when exposed; a first acid diffusion control component (D1); and a second acid diffusion control component (D2), wherein the acid generator component (B) includes a compound represented by general formula (B1-1) disclosed in the specification, the first acid diffusion control component (D1) includes a compound represented by general formula (d1-1) or (d1-2) disclosed in the specification, and the second acid diffusion control component (D2) includes a compound represented by general formula (d2-1) disclosed in the specification.
This resist composition generates an acid upon exposure to light, and the solubility of the resist composition in a developer solution changes due to the action of the acid. The resist composition contains a compound that includes a cation (C0) represented by general formula (c0). In general formula (c0), Rf0represents a fluorine atom or a fluorinated alkyl group. R01represents a substituent, and R02and R03each represent a substituent. L01and L02each represent a hydrogen atom or a substituent group, and L01and L02 may bond to each other to form a ring together with the sulfur atom in the formula. n0 and m0 each represent an integer of 1 to 4, p01 represents an integer of 0 to 3, and n0, m0 and p01 satisfy n0 + m0 + p01 ≤ 5. p02 and p03 each represent an integer of 0 to 3, q01 and q02 each independently represent an integer of 1 to 4, and p02, p03, q01 and q02 satisfy p02 + q01 ≤ 4 and p03 + q02 ≤ 4.
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
Provided is a resist composition which generates an acid upon exposure, and the solubility of which in a developer solution is changed by the action of the acid. The resist composition contains a resin component (A1) the solubility of which in a developer solution is changed by the action of an acid. The resin component (A1) has a structural unit (a01) that is represented by formula (a01) and a structural unit (a02) that is represented by formula (a02). In formula (a01) and formula (a02), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Ar0represents an aromatic hydrocarbon group, Ar01represents an aromatic hydrocarbon group, m0 represents an integer of 1 or more, Y02represents a single bond or a divalent linking group, Rf02represents a divalent linking group that contains a fluorine atom, m represents an integer of 1 or more; and Mm+ represents an m-valent cation.
C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
C07D 307/33 - Oxygen atoms in position 2, the oxygen atom being in its keto or unsubstituted enol form
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
Disclosed is a resist composition which contains a compound containing a cation (C0) represented by general formula (c0). (In the formula, Z+represents S+or I+. Ar1, Ar2, and Ar3each represent an aromatic ring. Rz11, Rz21, and Rz31each represent an alkyl group having 1 to 5 carbon atoms. Rz12, Rz22, and Rz32each represent a substituent. lz1, lz2, mz1, mz2, nz1, and nz2 are integers of 0 or more. However, at least one of lz1, mz1, and nz1 is an integer of 1 or more. In cases where Z+is S+, nz31 is 1, and in cases where Z+is I+, nz31 is 0.)
C07C 65/05 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring o-Hydroxy carboxylic acids
This resist composition contains a compound comprising a cation (C0) represented by general formula (c0). (In the formula, Z+represents S+or I+; Ar1, Ar2, and Ar3each represent an aromatic ring; I is an iodine atom;Rz11, Rz21, and Rz31each represent an alkyl group having 1-5 carbon atoms; Iz1, lz2, lz3, mz1, mz2, mz3, nz1, nz2, and nz3 are each an integer of 0 or more, where at least one of lz1, mz1, and nz1 is an integer of 1 or more, and at least one of lz2, mz2, and nz2 is an integer of 1 or more; and if Z+is S+, nz31 is 1 and if Z+is I+, nz31 is 0.)
C07C 65/05 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring o-Hydroxy carboxylic acids
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
The objective of the present invention is to provide a novel resist material which is represented by general formula (I) and which contains: (A) a salt of a polyacid or a mixture thereof, wherein a cation moiety of said salt of a polyacid or said mixture thereof contains an onium cation or an onium dication having at least one polar group comprising an acid-dissociable group; and (B) an acid diffusion control agent. Also provided are a pattern formation method and a patterned structure. (I) (Am+aa(Bn+bb(C(am + bn)-)
Provided is a resist composition which generates an acid upon exposure to light and the solubility of which with respect to a developer solution changes due to the action of the acid, said resist composition comprising: a base material component (A), the solubility of which with respect to a developer solution changes due to the action of the acid; and a compound (D0) which is represented by general formula (d0). Rd01is a hydrogen atom, a fluorine atom, or a fluorinated alkyl group. Rd02is a fluorine atom or a fluorinated alkyl group. Yd0is a (h+1)-valent linking group or a single bond. h is an integer of 1-3. Ar is an aromatic ring. Rd03is a substituent other than an iodine atom. j is an integer of 0 or more, valence permitting. k is an integer or 1 or more, valence permitting. Rb11 is a substituent. m1 is an integer of 0-3.
Provided are a resist composition having enhanced effects of improved sensitivity, reduced roughness and suppressed film loss, a resist pattern formation method using the resist composition, a compound useful for the resist composition, and an acid generator containing the compound. A resist composition contains a base material component (A) and an acid generator component (B). The acid generator component (B) contains a compound (B0) represented by general formula (b0). In the formula, Ar1and Ar2are aromatic rings. Rfis a trifluoromethyl group or a fluorine atom. L1and L2are divalent linking groups. nb1 and nb2 are integers of 1 or more. nb3 is an integer of 1-4. 3≤nb1+nb2. nr1 and nr2 are integers of 0 or more as long as the valence is allowed. nr3 is an integer of 0-3. Mm+ represents a m-valence organic cation. m is an integer of 1 or more.
C07C 309/42 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton having the sulfo groups bound to carbon atoms of non-condensed six-membered aromatic rings
C07C 309/44 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing doubly-bound oxygen atoms bound to the carbon skeleton
Provided are a negative photosensitive composition capable of forming a pattern having a good shape and capable of enhancing adhesion to a side wall of a hollow structure, a photosensitive resist film having a photosensitive film formed by using the negative photosensitive composition, and a method for manufacturing a hollow structure and pattern forming method that use the negative photosensitive composition. The negative photosensitive composition contains a trifunctional or higher polyfunctional epoxy compound, a cationic polymerization initiator, and a bifunctional aromatic epoxy compound having a molecular weight of 800 or less. In this negative photosensitive composition, the proportion of the content of the bifunctional aromatic epoxy compound is 0.6–10% by mass with respect to the total content (100% by mass) of the polyfunctional epoxy compound and the bifunctional aromatic epoxy compound.
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
C08G 59/02 - Polycondensates containing more than one epoxy group per molecule
C08G 59/08 - Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof of polyhydric phenols from phenol-aldehyde condensates
C08G 59/68 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the catalysts used
The present invention provides: a novel heteropolyoxometalate having a modified lacunary site, obtained by modifying the lacunary site of a heteropoly anion having a lacunary site and by introducing an organic sulfonium cation, an organic sulfonium dication, or an organic iodonium cation as a counter cation of the heteropoly anion having the modified lacunary site; or a mixture thereof.
C07D 333/46 - Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
C07D 333/54 - Benzo [b] thiophenesHydrogenated benzo [b] thiophenes with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
The present invention provides: a novel heteropolyoxometalate having a modified lacunary site, obtained by modifying the lacunary site of a heteropoly anion having a lacunary site, using a metal ion, an ammonium cation, an ammonium dication, a phosphonium cation, or a phosphonium dication as a counter cation of the heteropoly anion; or a mixture thereof.
C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
C07C 211/08 - Monoamines containing alkyl groups having a different number of carbon atoms
C07C 215/40 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton with quaternised nitrogen atoms bound to carbon atoms of the carbon skeleton
C07C 219/08 - Compounds containing amino and esterified hydroxy groups bound to the same carbon skeleton having esterified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having at least one of the hydroxy groups esterified by a carboxylic acid having the esterifying carboxyl group bound to an acyclic carbon atom of an acyclic unsaturated carbon skeleton
C07C 229/12 - Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton the nitrogen atom of the amino group being further bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings to carbon atoms of acyclic carbon skeletons
C07C 233/36 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by amino groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom having the carbon atom of the carboxamide group bound to a hydrogen atom or to a carbon atom of an acyclic saturated carbon skeleton
C07C 271/44 - Esters of carbamic acids having oxygen atoms of carbamate groups bound to carbon atoms of six-membered aromatic rings with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms to hydrogen atoms or to carbon atoms of unsubstituted hydrocarbon radicals
The purpose of the present invention is to provide a novel polyacid salt or a mixture thereof by introducing, into a cation part of a polyacid salt, an organic quaternary ammonium cation, an organic quaternary ammonium dication, or a pyridinium cation, each of which having two or more ethylenically unsaturated double bonds.
C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
C07C 215/40 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton with quaternised nitrogen atoms bound to carbon atoms of the carbon skeleton
C07C 233/36 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by amino groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom having the carbon atom of the carboxamide group bound to a hydrogen atom or to a carbon atom of an acyclic saturated carbon skeleton
14.
METHOD FOR PRODUCING HETEROPOLYOXOMETALATE HAVING MODIFIED LACUNARY SITE, OR MIXTURE THEREOF
The present invention provides a novel method for producing a heteropolyoxometalate having a modified lacunary site, or a mixture thereof, the method comprising: a step for using a Keggin-type or Dawson-type heteropolyoxometalate as a mono-lacunary Keggin-type or Dawson-type heteropolyoxometalate; and a step for obtaining a heteropolyoxometalate having a modifiect lacunary site by reacting the mono-lacunary Keggin-type or Dawson-type heteropolyoxometalate with a P, Si, Ge, or Sn compound having one or more hydro groups or an organic group and two or more leaving groups.
The present invention provides a method for producing polyacid salts or mixtures thereof, wherein impurities can effectively be removed without decomposing polyacid anions, which are the anion portions of the polyacid salts or mixtures thereof, by washing polyacid salts having prescribed counter cations or mixtures of the polyacid salts with an acidic aqueous solution having a pH of 6 or less.
The present invention employs a cleaning liquid containing a solvent and a metal remover. In the cleaning liquid, two or more solvents are included, the distance (HSP distance) between the Hansen solubility parameter of the cleaning liquid and the Hansen solubility parameter of dimethylacetamide is 1.0 or less, and the content of metal impurities is 0.1 × 10-9parts by mass or more and 102× 10-6 parts by mass or less with respect to 100 parts by mass of the total of the solvent and the metal remover. This cleaning liquid improves impurity removal.
The present invention employs a cleaning liquid containing a solvent and a metal remover. In the cleaning liquid, two or more solvents are included, the distance (HSP distance) between the Hansen solubility parameter of the cleaning liquid and the Hansen solubility parameter of dimethylacetamide is 1.0 or less, and the total content of an organic substance selected from the group consisting of organic acid multimers, organic acid esters, and ketone bodies is 0.1 × 10-9parts by mass or more and 105× 10-6 parts by mass or less with respect to 100 parts by mass of the total of the solvent and the metal remover. This cleaning liquid improves removal of organic impurities.
2222222 separation film; a porous film bonding step of bonding the porous film onto the coating film; and a sacrificial layer removing step of removing the sacrificial layer after the porous film bonding step. The raw material composition contains a silicon-containing resin and an organic solvent. The silicon-containing resin is a non-water-soluble resin. The silicon-containing resin has a mass average molecular weight of 2000 or more.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
B01D 71/64 - PolyimidesPolyamide-imidesPolyester-imidesPolyamide acids or similar polyimide precursors
B01D 71/70 - Polymers having silicon in the main chain, with or without sulfur, nitrogen, oxygen or carbon only
B32B 5/18 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer containing foamed or specifically porous material
B32B 37/02 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
19.
FILM-FORMING COMPOSITION, CURED FILM, PRODUCTION METHOD FOR CURED FILM, PRODUCTION METHOD FOR MULTILAYER BODY, AND CO2 SEPARATION METHOD
22 separation method using the multilayer body produced via said production method. The film-forming composition includes polydimethylsiloxane, a curing agent, and at least one hydroxamic acid or related substance selected from among hydroxamic acids and salts thereof, and the content of the hydroxamic acid or related substance is greater than 0 mass% and less than 5 mass% relative to the mass of the polydimethylsiloxane.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
22 separation film on the sacrifice layer, bonding the support base material on the film, and then removing the support body and the sacrifice layer, the sacrifice layer can be easily removed with a liquid such as water. The present invention specifically provides a method for manufacturing a multilayer body, the method including: a step for forming a sacrificial layer on a support body using a sacrificial layer forming composition; a step for forming a film on the sacrificial layer; a step for bonding a support base material on the film; a step for separating the support body after the bonding step; and a step for removing the sacrificial layer by dissolving the sacrificial layer into a liquid after the separation step. In this method for manufacturing a multilayer body, there is used a sacrificial layer forming composition which includes a resin, a polyol, and a solvent, wherein the resin has a functional group I which is one or more groups selected from the group consisting of a hydroxyl group, a cyano group, and a carboxyl group, and a functional group II which is a hydrophilic group or a hydrophobic group other than the functional group I.
B32B 7/06 - Interconnection of layers permitting easy separation
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
The present invention provides a resist composition which generates an acid upon exposure to light and changes a solubility in a developer liquid due to the action of the acid. This resist composition containing a resin component (A1) of which the solubility in a developer liquid changes due to the action of the acid, and the resin component (A1) has a constituent unit (a0) that is represented by general formula (a0-1). In formula (a0-1), L01represents a divalent linking group which contains at least one heteroatom that is selected from the group consisting of an oxygen atom, a nitrogen atom, and a sulfur atom; L02represents a divalent linking group; L03represents a single bond or the divalent linking group; R01represents a hydrocarbon group which may have a substituent; R02represents a hydrocarbon group which may have the substituent; m represents an integer of 1 or more; and Mm+ represents an m-valent cation. With such a resist composition, it is possible to form a resist pattern that has high sensitivity and reduced roughness.
C07C 233/55 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring having the carbon atom of the carboxamide group bound to a carbon atom of an unsaturated carbon skeleton
C07C 233/85 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom of an acyclic unsaturated carbon skeleton
22-containing cyclic group, or a carbonate-containing cyclic group, at least one of the constituent units (a1) being a constituent unit represented by general formula (a1-1). The acid generator component (B) contains a compound (B1) represented by general formula (b0-1). The acid diffusion control component (D) contains one or more compounds (D1) (excluding the compound (B1)) selected from the group consisting of a compound represented by general formula (d0-1) and a compound represented by general formula (d0-2).
Provided is a resist composition that generates an acid upon exposure to light, and has a varied solubility in a developer solution by the action of the acid. The resist composition contains a resin component (A1) of which solubility in a developer solution changes by the action of an acid, and the resin component (A1) has a structural unit (a0) derived from a compound represented by general formula (a0-m). W0represents a polymerizable group-containing group. Ar0represents an aromatic group which may have a substituent. Y0represents a divalent linking group. V0represents a single bond, an alkylene group, or a fluorinated alkylene group. Rf01and Rf02each independently represent a hydrogen atom, a fluorine atom or a fluorinated alkylene group. Both Rf01and Rf02cannot be hydrogen atoms. m is an integer of 1 or greater, and Mm+ is a m-valent cation.
C07C 59/135 - Saturated compounds having only one carboxyl group and containing ether groups, groups, groups, or groups containing halogen
C07C 69/90 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified hydroxyl and carboxyl groups
The present invention is a resist composition containing a resin component that has a structural unit derived from a compound represented by general formula (a0-m0). In general formula (a0-m0), W0represents a polymerizable group-containing group. Rarrepresents an aromatic group which may have a substituent. L01represents a divalent linking group or a single bond. L02represents a divalent linking group or a single bond. Z0 represents a cyclic group which may have a substituent. Rdg represents an acid-decomposable group whose polarity is increased by the action of an acid. This resist composition can increase etching resistance.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
The present invention provides: a resist composition which has good sensitivity, resolution, and etching resistance; a resist pattern forming method; a polymer compound; and a compound. The present invention employs a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The resist composition contains a resin component which has a constituent unit (a0) represented by general formula (a0-1). In the formula, Ar represents an aromatic ring. L1and L2each represent a divalent linking group or a single bond. Rs represents a substituent other than an iodine atom. C01represents a secondary carbon atom or a tertiary carbon atom. The acid dissociable group has a carbon-carbon unsaturated bond which is formed by the α-position of C01and the β-position of C01. R12and R13each represent a chain hydrocarbon group which may have a substituent, or alternatively, R12and R13122 represents a number of 0 or more.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07C 69/86 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified hydroxyl groups
Provided is a resist composition which generates an acid upon exposure to light and the solubility of which, in a developing solution, changes upon the action of an acid. The resist composition contains a compound that includes a cation (C0) represented by general formula (c0). Y0denotes an oxygen atom-containing polar group. X01and X02each denote a halogen atom or a halogenated alkyl group. R01, R02and R03each denote a substituent group. L01and L02each denote a hydrogen atom or a substituent group, and L01and L02 may bond to each other to form a ring together with a sulfur atom in the formula. n0 and m0 each denote an integer between 1 and 4, p01 denotes an integer between 0 and 3, and n0+m0+p01≤5. p02, q01, p03 and q02 each denote an integer between 0 and 4, p02+q01≤4, p03+q02≤4, and q01+q02≥1.
C07C 65/05 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring o-Hydroxy carboxylic acids
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
C07C 309/19 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton containing rings
C07C 309/23 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an unsaturated carbon skeleton containing rings other than six-membered aromatic rings
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
The purpose of the present invention is to provide: a solvate of a polyacid salt in which dispersibility or solubility in a solvent is improved compared to the polyacid salt itself, the solvate of a polyacid salt being characterized in that the solvent solvated with the polyacid salt includes a first solvent that is a good solvent with respect to the polyacid salt; and a method for producing the solvate of a polyacid salt.
C07B 63/00 - PurificationSeparation specially adapted for the purpose of recovering organic compoundsStabilisationUse of additives
C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
C07C 215/40 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton with quaternised nitrogen atoms bound to carbon atoms of the carbon skeleton
The purpose of the present invention is to provide a novel resist material and a method for producing the resist material, the resist material having a film-forming property and comprising: a polyacid salt or a solvate thereof; a first solvent; and a second solvent.
The present invention relates to a resist composition in which an acid is generated by exposure and solubility in a developer is changed by the action of the acid. The resist composition comprises: a base material component (A) of which the solubility in a developer changes due to the action of an acid; and an acid generator component (B) that generates an acid by exposure. The acid generator component (B) includes a compound (B1) represented by formula (b1), a compound (B2) represented by formula (b2), and a compound (B3) represented by formula (b3) in the description.
The present invention relates to a resist composition in which an acid is generated by exposure and solubility in a developer is changed by the action of the acid. The resist composition comprises: a base material component (A) of which the solubility in a developer changes due to the action of an acid; and an acid generator component (B) that generates an acid by exposure. The acid generator component (B) includes a compound (B1) represented by formula (b1), a compound (B2) represented by formula (b2), and a compound (B3) represented by formula (b3) in the description.
The present invention provides: a resist composition from which a resist pattern having favorable roughness-reducing properties can be formed; and a resist pattern forming method using said resist composition. The present invention pertains to a resist composition which generates an acid when exposed to light and of which the solubility in a developing solution changes due to the action of the acid, the resist composition comprising a base material component (A) of which the solubility in a developing solution changes due to the action of an acid, and an acid diffusion control component (D), wherein: the base material component (A) contains a polymer compound (A1) having a weight-average molecular weight of at least 30,000; the polymer compound (A1) has a constitutional unit (a1) represented by general formula (a-1) and a constitutional unit (a2) represented by general formula (a-2), which are disclosed in the specification; and the acid diffusion control component (D) contains at least one compound (D1) selected from the group consisting of compounds represented by general formula (d1-1) disclosed in the specification and compounds represented by general formula (d1-2) disclosed in the specification.
Provided are: a porous film capable of having a reduced hole diameter and an improved flow rate; and a method for producing the porous film. This porous film contains at least one resin component (A) selected from the group consisting of polyimides, polyamide imides, and polyether sulfones, and a solvent (S). The solvent (S) includes a nitrogen-containing polar solvent (S1) having a boiling point of at least 200°C under atmospheric pressure, and the contained amount of the nitrogen-containing polar solvent (S1) in the porous film is 10-2000 ppm.
C08J 9/26 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The present invention contains: a base material component (A) of which the solubility in a developing solution changes due to the action of an acid; and a compound (D0) represented by formula (d0). Ar01is an aromatic ring; X01is a halogen atom; Rd01is a substituent (excluding halogen atoms and hydroxy groups); Rx0is a group represented by the formula (Rx0-1); m01 and n01 are integers of 0 or more, valence permitting; Mm+is an m-valent cation; Ar02is an aromatic ring; X02is a halogen atom; Ld01is a single bond or an alkylene group; Ld02is an alkylene group; Rd02 is a substituent other than a halogen atom; m02 and n02 are integers of 0 or more, valence permitting (all of k0 of m02 are not 0 when m01 is 0).
C07C 65/24 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic
Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The present invention contains: a base material component (A) of which the solubility in a developer changes due to the action of an acid; and a compound (D0) represented by formula (d0). Cy0is a cyclic group; Rx0is a group represented by formula (Rx0-1); Rd01is a substituent; m01 is an integer of 0 or more, valence permitting; and k0 is an integer of 2 or more, valence permitting. Mm+is an m-valent cation. Ar0is an aromatic ring; Ld0is a divalent linking group containing a hetero atom; and Rd02 is a substituent. m02 is an integer of 0 or more, and * represents a bond.
C07C 65/24 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic
C07C 205/60 - Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by carboxyl groups having nitro groups and carboxyl groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton the carbon skeleton being further substituted by singly-bound oxygen atoms in ortho-position to the carboxyl group, e.g. nitro-salicylic acids
C07C 233/81 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups
This resist composition contains a resin component (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-1) (in the formula, Ra01represents a hydrogen atom, an alkyl group, or a halogenated alkyl group, L01represents a single bond, *1-C(=O)-O-*2, or *1-C(=O)-NH-*2, Ar01represents an aromatic group, L02represents a single bond or a divalent linkage group, Ra02represents a hydrogen atom or an alkyl group, I represents an iodine atom, m01 represents an integer of 1 or more, Mmd+ represents an m-valent onium cation, and m represents an integer of 1 or more).
C07C 65/19 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups having unsaturation outside the aromatic ring
C07C 65/28 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups having unsaturation outside the aromatic rings
Provided is a resist composition containing a resin component (A1) that includes a constituent unit (a0) derived from a compound represented by general formula (a0-1). (In the formula, W0is a polymerizable group-containing group; La01is a single bond or a divalent linking group; Ar0is an aromatic ring; I is an iodine atom; m0 is an integer of 0 or more; Ra0is an organic group which may have a substituent; n0 is an integer of 0 or more; La02is a single bond or a divalent linking group; m is an integer of 1 or more; and Mm+ is a m-valent cation.)
Disclosed is a resist composition which contains a base material component (A) and a compound (B0) represented by general formula (b0). (In the formula, Ar represents an aromatic ring; I represents an iodine atom; OH represents a hydroxy group; L01represents a divalent linking group; Rf01represents a fluorinated alkyl group or an aromatic group having one or more fluorine atoms; L02represents a divalent linking group; Rf02represents an organic group having three or more fluorine atoms; x represents an integer of zero or more; y represents an integer of zero or more; z represents an integer of one or more; Mmd+ represents an m-valent counter cation; and m represents an integer of one or more.)
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C07C 309/42 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton having the sulfo groups bound to carbon atoms of non-condensed six-membered aromatic rings
Disclosed is a resist composition which contains a resin component that has a constitutional unit derived from formula (a0-m0). In the formula, W01represents a polymerizable group-containing group; La01represents a divalent linking group; Ra01and Ra02each represent a fluorinated alkyl group, a fluorine atom or a hydrogen atom; Rc01, Rc02, and Rc03each represent a halogen atom, a hydroxy group, or an alkoxy group having 1 to 4 carbon atoms; Rc04and Rc05each represent a halogen atom, a hydroxy group, an alkoxy group having 1 to 4 carbon atoms, or a hydrogen atom, or alternatively, Rc04and Rc0501020301020301020301020303 are satisfied.
Disclosed is a resist composition that contains: a resin component (A1), the solubility of which in a developer solution is changed by the action of an acid; and a compound (D0) which is represented by general formula (d0-1). (In the formula, Cy1 represents a cyclic group including an aliphatic ring; Cy2 represents a benzene ring or a naphthalene ring; Xd01represents an iodine atom or a bromine atom; Rd01and Rd02each represent a substituent; Ld01represents a divalent linking group; Ld02represents a divalent linking group or a single bond; m01 represents an integer of 1 or more; n01 and n02 each represent an integer of 0 or more; Mmd+ represents an organic cation; and md represents an integer of 1 or more.)
C07C 65/26 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic containing rings other than six-membered aromatic rings
C07C 69/76 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring
C07C 69/753 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of polycyclic acids
C07C 233/63 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of rings other than six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups
C07C 311/14 - Sulfonamides having sulfur atoms of sulfonamide groups bound to carbon atoms of rings other than six-membered aromatic rings
The present invention provides: a method for selectively producing a metatungstate compound which contains five onium cations or onium dications by performing a salt exchange reaction of a metatungstate in an acidic solution that has a pH of less than 3; a novel metatungstate compound for resists, the metatungstate compound being produced by the production method; and a resist material which contains the metatungstate compound for resists.
The present invention uses a resist composition that contains a base material component that has a structural unit derived from a compound represented by general formula (a0-1). In formula (a0-1), W01represents a polymerizable group–containing group, La01represents a divalent linking group or a single bond, and I represents an iodine atom. Ra02represents a substituent other than an iodine atom. Ya01represents a divalent linking group or a single bond. Va01represents a single bond, an alkylene group, or a fluorinated alkylene group. Ra01represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group. Mm+ is an m-valent cation.
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
The present invention employs a resist composition comprising a resin component that has a structural unit derived from a compound represented by general formula (a0-m0). In the general formula, W0represents a polymerizable-group-containing group. Rar1represents an aromatic group that may have a substituent. L01represents a divalent linking group or a single bond. Vb0represents an alkylene group, a fluorinated alkylene group, or a single bond. R0represents a fluorinated alkyl group, a fluorine atom, or a hydrogen atom. L02represents a (p+1)-valent linking group or a single bond. p represents an integer of 1 or more. However, when L02represents a single bond, p is 1. Rar2represents an aromatic group that may have a substituent. q represents an integer of 1 or more. Mm+ represents an m-valent onium cation. m represents an integer of 1 or more. With this resist composition, it is possible to enhance the effects of both a decrease in roughness and suppression of film loss during resist pattern formation.
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
The present invention provides a photosensitive resin composition containing a hydrogenated bisphenol A type epoxy resin (A1) having an epoxy equivalent weight of 600 or more, and a photoacid generator (B1) represented by general formula (b-1). In the formula, Rb1to Rb3each independently represent an aryl group, a heteroaryl group, an alkyl group, or an alkenyl group, optionally having a substituent. Rb1to Rb3do not include condensed rings. Rb4to Rb7 each independently represent an aryl group optionally having a substituent, or a fluorine atom.
C08G 59/68 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the catalysts used
Provided are a resist composition, a method for forming a resist pattern, and a polymer compound. The resist composition contains a resin component (A1) having a structural unit (a0) represented by general formula (a0-0). In formula, R01and R02a0a0a0 is 1, La01a0a0 is 2 or more, La01a0a0+1)-valent linking group. La02is a single bond or a divalent linking group. Mm+ is an m-valent onium cation. m is an integer of 1 or more.
This resist composition generates an acid via exposure to light, and the solubility thereof with respect to a developer is changed by the action of the acid. The resist composition contains a resin component (A1) whose solubility with respect to the developer is changed by the action of the acid. The resin component (A1) includes a structural unit (a0) represented by general formula (a0). R represents a hydrogen atom, a 1-5C alkyl group, or a 1-5C halogenated alkyl group; L01and L03each independently represent a single bond or a divalent linking group; L02represents -COO- or -CONH-; Ar01and Ar02each independently represent an arylene group which may have a substituent; and Rpg0 represents an acid-dissociable group.
Disclosed is a resist composition which contains a resin component (A1) that has a constituent unit (a0) derived from a compound represented by general formula (a0-1), and a fluororesin component (F1) that has a constituent unit (f1) containing a base dissociable group. (In the formula, W01represents a polymerizable group-containing group; La01and La02each independently represent a single bond or a divalent linking group; Ar01represents an aromatic hydrocarbon group; Ya01represents a divalent linking group or a single bond; Va01represents a single bond, an alkylene group or a fluorinated alkylene group; Ra01represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group having 1 to 5 carbon atoms; and Mm+ represents an m-valent cation).
Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The resist composition contains a resin component (A1) which has a constituent unit (a0) represented by formula (a0). A0represents an oxygen atom or a sulfur atom; Y0represents a single bond or an (n01 + 1)-valent linking group; L01represents a single bond or a divalent linking group; R01represents a hydrogen atom or a group represented by formula (r01-1) or (r01-2); V01and V02each represent a single bond or a methylene group; n01 represents an integer of 1 or more; Mm+represents an m-valent cation; Y02represents a single bond or an (n02 + 1)-valent linking group; L02represents a single bond or a divalent linking group; n02 represents an integer of 1 or more; Y03represents a single bond or a divalent linking group; and R03 represents a hydrocarbon group.
C07C 69/94 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of polycyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of six-membered aromatic rings
A resist composition containing a resin component (A1) including a constituent unit (a0) represented by general formula (a0) (wherein R represents a hydrogen atom, etc.; X0represents a hydrogen atom or an alkyl group; Ar01represents an optionally substituted arylene group; La01represents a single bond or a divalent linking group; and Rpg0 represents an acid-dissociable group).
This resist composition contains a resin component (A1) of which the solubility with respect to a developer changes by the action of an acid. The resin component (A1) includes a structural unit (a0) induced from a compound represented by general formula (a0-1) (in the formula, I represents an iodine atom, L0 represents a single bond or a divalent linkage group, and Rpg represents an acid-dissociable group).
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07C 69/65 - Halogen-containing esters of unsaturated acids
C07C 69/73 - Esters of carboxylic acids having esterified carboxyl groups bound to acyclic carbon atoms and having any of the groups OH, O-metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
C07D 409/06 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing only aliphatic carbon atoms
The present invention employs a resist composition which contains a resin component that has a constituent unit derived from a compound represented by general formula (a01-b) and a constituent unit derived from a compound represented by general formula (a02-d). In the formulae, W01and W02each represent a group containing a polymerizable group. X01and X02each represent a divalent linking group or a single bond. R0represents a fluorinated alkyl group having 1 to 5 carbon atoms, a fluorine atom, or a hydrogen atom. Mm+represents an m-valent onium cation. Nn+represents an n-valent onium cation. Meanwhile, an iodine atom is contained in any one or more of X01, X02, Mm+, and Nn+. This resist composition makes it possible to enhance the sensitivity during the formation of a resist pattern, and to achieve improvement of the lithography characteristics such as reduction in roughness of a pattern, and also makes it possible to increase the process margin.
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
Disclosed is a resist composition which generates an acid when exposed to light, and the solubility of which with respect to a developer solution is changed by the action of the acid. The resist composition contains a resin component (A1), the solubility of which with respect to a developer solution is changed by the action of an acid, and the resin component (A1) comprises a constituent unit (a0) that is represented by general formula (a0-1). In the formula, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; L0represents a single bond or a divalent linking group; X0represents an oxygen atom, a sulfur atom, or a group represented by -N(Rx0)-; Rx0represents an alkyl group having 1 to 3 carbon atoms; Rpg represents an acid dissociable group; R0 represents a substituent; and n0 represents an integer of 0 to 4.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07D 209/42 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
C07D 307/79 - Benzo [b] furansHydrogenated benzo [b] furans with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
C07D 307/84 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen
C07D 307/85 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
C07D 307/86 - Benzo [b] furansHydrogenated benzo [b] furans with an oxygen atom directly attached in position 7
C07D 333/70 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
C07D 409/14 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing three or more hetero rings
C08F 20/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
52.
RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD
This resist composition contains: a base material component (A); an acid generating agent component (B) including a compound (B0) represented by formula (b0); and a fluorine additive component (F) having a structural unit (f0) represented by formula (f0). Rpg represents an acid decomposable group, Rl01and Rl02each represent a cyclic hydrocarbon group, L01represents a divalent linkage group or a single bond, L02and L03each represent a divalent linkage group, Rm1represents a substituent other than an iodine atom, Vb0represents an alkylene group, a fluorinated alkylene group, or the like, R0represents a fluorinated alkyl group, a fluorine atom, or the like, nb1 represents an integer of 1-4, nb2 represents 1-4, nb3 represents an integer of 0-3, mb1 and mb2 each represent 0 or 1, Mm+ represents an m-valent organic cation, R represents an alkyl group, a halogenated alkyl group, or the like, X0represents a divalent linkage group not having an acid dissociable site, and Rf0 represents an organic group having a fluorine atom.
Disclosed is a pattern forming method which includes a step for exposing a metal compound-containing film to light and a step for processing the light-exposed metal compound-containing film with use of a processing liquid, and which is characterized in that the processing liquid contains 20% by mass or more of a first solvent that is composed of one or more solvents selected from the group consisting of (1) a benzene ring in which one or more hydrogen atoms are each substituted by a polar substituent, (2) a 5- or 6-membered aromatic heterocyclic ring in which one or more hydrogen atoms may be each substituted by a polar substituent, (3) a 5- or 6-membered hydrocarbon ring which has one or more double bonds in the ring, and in which at least one hydrogen atom is substituted by a polar substituent, or alternatively, a 5- or 6-membered hydrocarbon ring which has a carbonyl group in the ring, and in which at least one hydrogen atom may be substituted by a polar substituent, and (4) a 5- or 6-membered non-aromatic heterocyclic ring in which at least one hydrogen atom is substituted by a polar substituent, or alternatively, a 5- or 6-membered non-aromatic heterocyclic ring which has a total of two or more of hetero atoms and/or carbonyl groups in the ring, and in which at least one hydrogen atom may be substituted by a polar substituent.
This pattern forming method comprises a step of exposing a metal compound-containing film and a step of using a processing liquid to process the exposed metal compound-containing film, the method being characterized in that: the processing liquid includes an organic solvent; the organic solvent includes a first solvent in which ClogP ≤ 0.7 and ΔH + ΔP ≥ 16; and the content of the first solvent is 30 mass% or more with respect to 100 mass% of the organic solvent.
The present invention provides: a novel resist composition containing (A) a resin component having solubility in developing solution that is changed by the action of an acid, and (B) a polyacid salt; and a pattern forming method using the composition.
The present invention employs a resist composition which generates an acid by means of light exposure and of which the solubility in a developing solution is changed by the action of the acid, the resist composition containing: a base material component of which the solubility in a developing solution is changed by the action of the acid; and a compound (D0) which is represented by general formula (d0). In general formula (d0), Z is a polycyclic cyclic group that includes a benzene ring. Rd01is a substituent. j is an integer of 0 or more, valence permitting. When j is an integer of 2 or more, each of the plurality of Rd01s may be the same or may be different. k is an integer of 1 or more, valence permitting. Yd0is a divalent linking group or a single bond. m is an integer of 1 or more, and Mm+ represents an organic cation having a valence of m. Said resist composition makes it possible to have good lithographic properties, such as uniformity of pattern dimensions, and to improve in stability over time.
C07C 205/57 - Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by carboxyl groups having nitro groups and carboxyl groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
C07C 205/58 - Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by carboxyl groups having nitro groups and carboxyl groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton the carbon skeleton being further substituted by halogen atoms
22—-containing cyclic group, or a carbonate-containing cyclic group, the resin component (A1) not containing an aromatic ring. The plasticizer component (Z) has a structural unit (z1) represented by general formula (z1-1) described in the description, and the contained amount of the plasticizer component (Z) is 20 parts by mass or less per 100 parts by mass of the resin component (A1).
The present invention employs a resist composition that contains a resin component having a constituent unit represented by general formula (a0-1). In formula (a0-1), R01is a divalent linking group or a single bond. R02is an acid-dissociable group. Y00is a divalent linking group or a single bond. R00is an aromatic hydrocarbon group that may have a substituent. Y01is a divalent linking group or a single bond. Mm+ is an m-valent onium cation. m is an integer of 1 or more. With this resist composition, it is possible to form a resist pattern having high sensitivity and excellent lithography properties such as uniformity of pattern dimensions.
A surface-modified-layer-forming composition for forming a surface-modified layer provided between a support and a resist film, the surface-modified-layer-forming composition containing a resin component (G) having a structural unit (g0) represented by general formula (g0-1), and a resin component (P) having a structural unit (p0) represented by general formula (p0-1). R represents a hydrogen atom, a C1–5 alkyl group, or a C1–5 halogenated alkyl group, Yg0is a divalent linking group, Rg0is an epoxy-group-containing group, Yp0is a divalent linking group; and Rp0 is a C2–20 chain hydrocarbon group that may have a substituent.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
61.
RADIANT FILM, METHOD FOR PRODUCING RADIANT FILM, HEAT-DISSIPATING FILM, HEAT-DISSIPATING DEVICE, AND COATING LIQUID
Provided are: a radiant film that exhibits good heat-dissipating performance; a method for producing said radiant film; a heat-dissipating film comprising said radiant film; a heat-dissipating device provided with said heat-dissipating film; and a coating liquid able to be advantageously used to form said radiant film. In the present invention, a film is used as a radiant film, the film comprising a composition that contains: a crosslinked SPA obtained by crosslinking sodium polyacrylate with a crosslinking agent comprising a metal compound containing a divalent or higher metal ion; and a crosslinked PVA obtained by crosslionking poly(vinyl alcohol). Said composition preferably contains an inorganic filler.
This resist composition generates an acid when being exposed, and changes the solubility with respect to a developer by the action of the acid. The resist composition contains a resin component (A1) of which the solubility with respect to a developer changes by the action of an acid. The resin component (A1) includes a structural unit (a0) represented by general formula (a0-1). L01represents a divalent linkage group, L02represents a divalent linkage group including at least one selected from the group consisting of an ether bond, an amide bond, and an ester bond, R01represents a hydrocarbon group optionally having a substituent, Rf01-Rf03each independently represent a hydrogen atom, a fluorine atom, or a fluorinated alkyl group, n0 represents an integer of 0-5, m represents an integer of 1 or more, and Mm+ represents an m-valent cation.
Provided are: an electromagnetic wave absorber, the electromagnetic wave absorption characteristics of which are not susceptible to deterioration even when exposed to a high temperature for a long time; and a paste for forming the electromagnetic wave absorber, said paste favorably being used for manufacturing the electromagnetic wave absorber. The electromagnetic wave absorber comprises an electromagnetic wave absorption layer, the electromagnetic wave absorption layer containing a magnetic body, a binder resin, and a non-dielectric material, the binder resin including an amorphous resin that has a glass transition point of 80°C or higher and/or a crystalline resin that has a melting point of 150°C or higher, and the non-dielectric material being different from the magnetic body.
This silicon-containing resin composition purified product manufacturing method comprises a step for filtering a silicon-containing resin composition by using a filter having a porous structure in which adjacent spherical cells are connected. The filter is provided with a porous film containing at least one resin selected from the group consisting of polyimides and polyamide imides. The silicon-containing resin composition contains: a silicon-containing resin (A) in which the main chain comprises siloxane bonds; a siloxane bond-containing cage compound other than the silicon-containing resin (A); and an organic solvent component. The manufacturing method enables manufacturing of a silicon-containing resin composition purified product which has less impurities and in which occurrence of defects when forming a coating film is suppressed.
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
B01D 71/64 - PolyimidesPolyamide-imidesPolyester-imidesPolyamide acids or similar polyimide precursors
C08K 5/5415 - Silicon-containing compounds containing oxygen containing at least one Si—O bond
This resist composition comprises: a resin component (A1), the solubility of which to a liquid developer changes due to the action of an acid; and a fluorine-containing polymer compound (F0) having a structural unit (f0) derived from a compound represented by general formula (f0-1). In the formula, W1is a polymerizable group. Ar represents an aromatic ring. Xf represents an iodine atom or a substituent containing an iodine atom. Lf01represents a single bond or a linking group having a valance of (n1+1). Rf01represents a fluorinated alkyl group having 1-12 carbon atoms. Rf02represents a hydrogen atom or an organic group having 1-12 carbon atoms and optionally having a fluorine atom. Rf03 represents a substituent other than an iodine atom.
Provided are: a resist composition that further enhances roughness reduction and resolution; a resist pattern formation method that uses the resist composition; and a compound that is useful as an acid diffusion control agent used in the resist composition. The resist composition contains: a base component (A) of which the solubility in a developer solution changes due to the action of acid; and a compound (D0) represented by general formula (d0). In the formula, Rd01d01d01d01 is 2 or greater, Rd02d02d02 is any integer from 0 to 5. Rd03d03122 is independently a divalent linking group. Mm+ is an m-valent organic cation. m is an integer of 1 or greater.
According to the present invention, a workpiece processing method includes a step for bringing a boron-containing substance removal liquid that includes orthoperiodic acid and water into contact with a workpiece on which there is a boron-containing substance to remove the boron-containing substance. According to the present invention, a removal liquid for removing a boron-containing substance from a workpiece on which there is a boron-containing substance includes orthoperiodic acid and water.
H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks
68.
HETEROPOLYOXOTUNGSTATE COMPOUND, SOLVATE THEREOF, OR MIXTURE OF COMPOUND AND SOLVATE THEREOF, AND METHOD FOR PRODUCING COMPOUND, SOLVATE THEREOF, OR MIXTURE OF COMPOUND AND SOLVATE THEREOF
Provided are: a heteropolyoxytungstate compound represented by a general formula (I), a solvate thereof, or a mixture of the compound and the solvate thereof; and a method for producing this compound, the solvate thereof, or the mixture of the compound and the solvate thereof. General formula (I): (Am+x/mx/m(Bn+y/ny/n(C-(x+y)).
C07C 43/225 - Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing halogen
C07C 205/12 - Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by halogen atoms having nitro groups bound to carbon atoms of six-membered aromatic rings the six-membered aromatic ring or a condensed ring system containing that ring being substituted by halogen atoms
69.
HETEROPOLYOXOTUNGSTATE COMPOUND, SOLVATE THEREOF, OR MIXTURE OF SAID COMPOUND AND SOLVATE, AND METHOD FOR PRODUCING SAID COMPOUND, SOLVATE, OR MIXTURE
Provided are: a heteropolyoxotungstate compound represented by general formula (I); a solvate thereof; a mixture of said compound and solvate; and a method for producing said compound, solvate, or mixture. (I): (Am+x/mx/m(Bn+y/ny/n(C-(x+y))
C07D 333/46 - Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
Disclosed is a method for producing a purified resist composition, the method comprising a step for filtrating a resist composition with a filter that has a porous structure wherein adjacent spherical cells are in communication with each other. The filter is provided with a porous membrane which contains at least one resin that is selected from the group consisting of a polyimide and a polyamide imide. The resist composition contains a metal compound (M) and an organic solvent component (S). The metal compound (M) comprises: a metal ion of a group 3-16 metal atom of the long form periodic table or a metal oxide of the metal atom; and a connector which is connected to the metal ion or the metal oxide. The content of the metal atom contained in the metal ion or the metal oxide is 0.2% by mass to 3% by mass relative to the total mass of the resist composition.
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
B01D 71/64 - PolyimidesPolyamide-imidesPolyester-imidesPolyamide acids or similar polyimide precursors
The present invention involves a resist composition wherein a polymer compound which has a constituent unit derived from a compound represented by general formula (a0-m) and which generates an acid when exposed to light is used as a base resin. In formula (a0-m), W0represents a group containing a polymerizable moiety; Rarrepresents an aromatic ring to which an iodine atom has been bonded as a substituent group; the aromatic ring may have a substituent group other than the iodine atom bonded thereto; L0represents a bivalent linking group; j represents an integer of 0-4; n0 represents an integer of 1 or greater which is permitted by the valency; m represents an integer of 1 or greater; and (Mm+n0/mn0/m represents a counter cation. The resist composition increases sensitivity when forming a resist pattern, improves etching resistance, and enhances lithographic properties such as dimensional uniformity.
The present invention involves a resist composition wherein a polymer compound which has a constituent unit derived from a compound represented by general formula (a0-m) and which generates an acid when exposed to light is used as a base resin. In formula (a0-m), W0represents a group containing a polymerizable moiety; R0represents a hydrocarbon group, an acyl group, an alkoxyalkyl group, or a hydrogen atom; L01represents a bivalent linking group or a single bond; Rarrepresents an aromatic ring to which an iodine atom has been bonded as a substituent group; L02represents a bivalent linking group; n0 represents an integer of 1 or greater; m represents an integer of 1 or greater; and (Mm+n0/mn0/m represents a counter cation. The resist composition increases sensitivity when forming a resist pattern, improves lithographic properties such as dimensional uniformity, and can increase the process margin.
A resist composition that generates an acid when exposed to light and exhibits a change in solubility in a developing solution due to the action of the acid, said resist composition containing a resin component (A1) that exhibits a change in solubility in the developing solution due to the action of the acid, wherein the resin component (A1) contains as constituent unit (a0) represented by formula (a0-1). A0is an oxygen atom or a sulfur atom; Y01is a linking group having a valency of (n01+1); L01is a single bond or a bivalent linking group; R01is a hydrogen atom or a group represented by formula (r01-1) or (r01-2); V01and V02are a single bond or a methylene group; Mm+is a cation having a valency of m; Y02is a linking group having a valency of (n02+1); L02is a single bond or a bivalent linking group; Y03is a single bond or a bivalent linking group; and R03 is an optionally substituted hydrocarbon group.
Provided is a resist composition comprising: a resin component (A1) of which the solubility in a liquid developer changes as a result of the action of an acid; a compound (D0) which is represented by general formula (d0); and a fluororesin component (F1) which has a constituent unit (f1) containing a base-dissociable group having a specified structure. In the formula, Ar represents an aromatic ring; I represents an iodine atom; Rd01represents a substituent other than an iodine atom and a carboxy group; n1 represents an integer of 2 or more; n2 represents an integer of 0 or more; Ld01represents a single bond or a divalent linking group; m represents an integer of 1 or more; and Mm+ represents a m-valent cation.
One embodiment of the present invention uses a resist composition comprising a compound represented by a general formula (b0). In the formula (b0), Z is a ring-type group comprising a heterocyclic ring constituted by at least a carbon atom and a nitrogen atom. Xb0xb0xb0 is an integer of 1 or greater; Rb0rb0rb0 is an integer of 0 or greater; Yb00z0z0 is an integer of 1 or greater. Yb01z0z0z0z0 is 2 or greater. Yb02is a divalent linking group when Yb01is a single bond, and is a divalent linking group or a single bond when Yb01is not a single bond. Vb0is an alkylene group, a fluorinated alkylene group, or a single bond; and R0is a fluorinated alkyl group, a fluorine atom, or a hydrogen atom. Mm+ represents an organic cation. Such resist composition can achieve high sensitivity upon formation of a resist pattern, and can further improve lithographic characteristics.
C07D 205/08 - Heterocyclic compounds containing four-membered rings with one nitrogen atom as the only ring hetero atom not condensed with other rings having one double bond between ring members or between a ring member and a non-ring member with one oxygen atom directly attached in position 2, e.g. beta-lactams
C07D 207/16 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
C07D 207/34 - Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
C07D 231/04 - Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having no double bonds between ring members or between ring members and non-ring members
C07D 249/10 - 1,2,4-TriazolesHydrogenated 1,2,4-triazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
C07D 263/34 - Heterocyclic compounds containing 1,3-oxazole or hydrogenated 1,3-oxazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
The present invention provides: a resist composition which has higher sensitivity and is resistant to etching, and which is good at reducing roughness and improving an exposure latitude; a method for forming a resist pattern; a compound; and a polymer compound. Disclosed is a resist composition that contains a resin component (A), the solubility of which in a developer solution is changed by the action of an acid, and which has a constituent unit represented by general formula (a0-1). In the formula, each of R01and R02independently represents an alkyl group, a halogenated alkyl group or a hydrogen atom. Rarrepresents an optionally substituted aromatic ring. Each of L1and L2independently represents a single bond or a divalent linking group. R0300 is an integer of 1 or more, valence permitting. Mm+ is an m-valent onium cation. m is an integer of 1 or more.
C07D 207/452 - Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having three double bonds between ring members or between ring members and non-ring members having two doubly-bound oxygen atoms directly attached in positions 2 and 5 with only hydrogen atoms or radicals containing only hydrogen and carbon atoms directly attached to other ring carbon atoms, e.g. maleimide with hydrocarbon radicals, substituted by hetero atoms, directly attached to the ring nitrogen atom
C08F 220/00 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
This resist composition contains: a resin component (A1), the solubility of which in a developer solution is changed by the action of acid; and a compound (D0) represented by the following general formula (d0). In the formula: Ar1 and Ar2 are benzene rings or naphthalene rings; Xd01and Xd02are iodine atoms or bromine atoms; Rd01and Rd02are substituents; Ld01and Ld02are divalent linking groups or single bonds; m02 is an integer of 1 or greater; m01, n01, and n02 are integers of 0 or greater; Mmd+ is a sulfonium cation or an iodonium cation; and md is an integer of 1 or greater.
C07C 63/331 - Polycyclic acids with all carboxyl groups bound to non-condensed rings
C07C 65/21 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups
C07C 229/56 - Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to carbon atoms of six-membered aromatic rings of the same carbon skeleton with amino and carboxyl groups bound to carbon atoms of the same non-condensed six-membered aromatic ring with amino and carboxyl groups bound in ortho- position
C07C 233/81 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups
C07C 311/21 - Sulfonamides having sulfur atoms of sulfonamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the sulfonamide groups bound to a carbon atom of a six-membered aromatic ring
z0z0 is an integer of 1 or greater. Yd01z0z0+1) valent linking group. Yd00is a single bond or linking group having from 1 to 20 carbon atoms. Xd0xd0xd0 is an integer of 1 or greater. Rd0is a substituent other than Xd0rd0rd0 is an integer of 0 or greater. Mm+ is an m-valent organic cation. m is an integer of 1 or greater.
C07D 205/08 - Heterocyclic compounds containing four-membered rings with one nitrogen atom as the only ring hetero atom not condensed with other rings having one double bond between ring members or between a ring member and a non-ring member with one oxygen atom directly attached in position 2, e.g. beta-lactams
C07D 207/16 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
C07D 207/34 - Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
C07D 231/04 - Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having no double bonds between ring members or between ring members and non-ring members
C07D 249/10 - 1,2,4-TriazolesHydrogenated 1,2,4-triazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
C07D 263/34 - Heterocyclic compounds containing 1,3-oxazole or hydrogenated 1,3-oxazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
PUBLIC UNIVERSITY CORPORATION NAGOYA CITY UNIVERSITY (Japan)
Inventor
Kumazawa Hirotsugu
Yoshioka Takahiro
Matsunaga Tamihide
Iwao Takahiro
Abstract
TT) of the tube (100) being 0.1-1 mm. The tube (100) for piping has low drug sorption properties, and has both good formability into a tube shape and compatibility with a pump connection and the like. In the general formulas, R1-R7are each independently a fluorine atom or a hydrogen atom. R8is a trifluoromethyl group, a methyl group, or a group represented by -O-Rf. Rf is a fluoroalkyl group having 1-15 carbon atoms. There is a fluorine atom in at least one of R1-R8.
The purpose of the present invention is to provide: an agent for forming a protective film, the agent exhibiting excellent film formation properties when a protective film is formed therefrom, and enabling the achievement of a protective film that has excellent plasma etching resistance; a method for producing this agent for forming a protective film; a protective film which is obtained from this agent for forming a protective film; and a method for producing a semiconductor chip. The present invention provides an agent for forming a protective film, the agent containing: a first resin which does not have an aromatic ring; a metal salt which has a boiling point of 900°C or higher in cases where the metal salt is a metal fluoride; and a solvent.
H01L 21/301 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to subdivide a semiconductor body into separate parts, e.g. making partitions
B23K 26/364 - Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
Provided are: a resist composition which makes it possible to improve sensitivity and further improve resolution when a resist pattern is formed from the resist composition; a resist pattern formation method using the resist composition; and a compound which is useful as a raw material for a base material component to be used in the resist composition. The present invention employs a resist composition containing a resin component (A1) having a constituent unit represented by general formula (a0-0). Ra01represents an acid-dissociable group represented by formula (a0-ra). R02and R03 together form a linear hydrocarbon group or a cyclic group, and each have a carbon-carbon unsaturated bond. A group having 10 or less carbon atoms, which is selected from a hydroxy group, a carboxy group, a sulfo group, an amino group, a phosphate group, an amide group, and ether group, an imino group and a thioether group, is bound to at least one of carbon atoms constituting the carbon-carbon unsaturated bond.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
C08F 220/26 - Esters containing oxygen in addition to the carboxy oxygen
83.
RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT
The present invention uses a resist composition containing: a base material component of which the solubility in a developer solution changes due to the action of an acid; and a compound represented by general formula (d0). In the formula (d0), Rf is a hydrocarbon group which may have a fluorine atom. L2is a divalent cyclic group which may have a substituent. L1and L3are each independently a divalent linking group. x is an integer of 1-4. Rd0is an iodine atom or a bromine atom. y is an integer of 1-4. z is an integer of 0-3. However, 2≤x+y+z≤5. (Mm+1/m1/m is a counter cation. m is an integer of 1 or more. By using this resist composition when forming a resist pattern, sensitivity is increased and roughness is reduced, and it is possible to form a pattern having a good shape with increased rectangularity.
C07C 69/753 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of polycyclic acids
C07C 69/757 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring having any of the groups OH, O-metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
[Problem] To provide: a novel isopolyoxotungstate salt compound, a solvate thereof, or a mixture of the compound and the solvate; and a method for producing the isopolyoxotungstate salt compound, the solvate or the mixture. [Solution] An isopolyoxotungstate salt compound which is represented by general formula (I), a solvate thereof, or a mixture of the compound and the solvate; and a method for producing the isopolyoxotungstate salt compound, the solvate or the mixture. (I): (Am+x/mx/m(Bn+y/ny/n(C-(x+y))
The present invention employs a resist composition which contains: a base material component, the solubility of which in a developer solution changes by the action of an acid; and a compound which is represented by general formula (b0). In formula (b0), Rbrepresents a base decomposable group; L03represents a divalent linking group; Rl0represents a cyclic organic group; L02represents a divalent linking group; Rm1represents a substituent; L01represents a divalent linking group or a single bond; Vb0represents an alkylene group, a fluorinated alkylene group, or a single bond; R0represents a fluorinated alkyl group, a fluorine atom or a hydrogen atom; nb1 represents an integer of 1 to 4, nb2 represents an integer of 1 to 4, and nb3 represents an integer of 0 to 3; 2 ≤ nb1 + nb2 + nb3 ≤ 5; Mm+ represents an organic cation having a valence of m; and m represents an integer greater than or equal to 1. This resist composition enables the achievement of higher sensitivity during the formation of a resist pattern, and is capable of enhancing the in-plane uniformity of pattern dimensions and lithography characteristics such as fine resolution.
The present invention employs a resist composition that contains: a base material component that changes solubility in a developer under the action of an acid; and a compound that is represented by general formula (d0). In formula (d0), Rdis a base-decomposable group. L03is a divalent linking group. Rl0is a cyclic organic group. L02is a divalent linking group. Rm1is a substituent. L01is a divalent linking group or a single bond. nd1 is an integer from 1 to 4, nd2 is an integer from 1 to 4, and nd3 is an integer from 0 to 3, provided that 2≤nd1+nd2+nd3≤5. Mm+ is an m-valent organic cation. m is an integer that is at least 1. This resist composition makes it possible to improve sensitivity during resist pattern formation as well as to improve lithography characteristics such as in-plane uniformity of pattern dimensions and fine resolution.
Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer is changed by the action of an acid. The resist composition comprises a resin component (A1) the solubility of which in a developer is changed by the action of an acid and an acid generating component (B) which generates an acid upon the exposure to light, in which the acid generating component (B) comprises a compound (B0) represented by formula (b0). In general formula (b0), Ar represents an aromatic ring; Rf0represents a fluorinated alkyl group or a fluorine atom; L0represents a bivalent linking group; Yb0represents an alicyclic group; Rb0represents an organic group; n01 represents an integer of 1 or more; n02 represents an integer of 0 or more; Mm+represents a m-valent cation; and, when L0-Yb0is -C(=O)-O-Yb0, Yb01 represents an alicyclic group or the like.
C07C 309/42 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton having the sulfo groups bound to carbon atoms of non-condensed six-membered aromatic rings
C07C 309/58 - Carboxylic acid groups or esters thereof
C07J 9/00 - Normal steroids containing carbon, hydrogen, halogen, or oxygen, substituted in position 17 beta by a chain of more than two carbon atoms, e.g. cholane, cholestane, coprostane
The present invention provides: a resist composition that is improved in terms of a decrease in roughness and sensitivity, and that can suppress film reduction during development; a resist pattern formation method that uses the resist composition; and compound that is useful as an acid diffusion control agent to be used in the resist composition. Employed is a resist composition which generates an acid upon light exposure, and the solubility of which with respect to a developing liquid changes, said resist composition comprising a base material component (A), the solubility of which with respect to the developing liquid changes due to acid, and a compound (D0) which is represented by general formula (d0). In formula (d0), Z is a polycyclic cyclic group including a benzene ring. Rd01is a substituent. j is an integer of 0 or greater, valence permitting. Xd01is an iodine atom or a bromine atom. k is an integer of 1 or greater, valence permitting. m is an integer of 1 or greater, and Mm+ represents an organic cation having a valence of m.
C07C 65/11 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups polycyclic with carboxyl groups on a condensed ring system containing two rings
C07C 65/24 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic
The present invention is a method for manufacturing a processed substrate that has a surface with an at least partially modified region, wherein employed is a manufacturing method that includes: a step in which a surface of a substrate (10) is exposed to a surface modifier that contains a compound (A) (20) that can bind to the substrate (10); and a step in which the exposed substrate (10) is cleaned using a cleaning liquid, and a processed substrate (100) is obtained on which a film is formed with the compound (A) (20) controlled in a planar direction and a height direction of the substrate (10). The present invention is characterized in that the cleaning liquid selected for use is a cleaning fluid for which the distance Ra between the Hansen solubility parameter of the compound (A) (20) and the Hansen solubility parameter of the cleaning liquid satisfies the relationship (Ra)2 ≤ 128.
In a well array filter (1), a plurality of wells (3) is formed in a filter body (2), and adjacent wells (3) are partitioned by well partition wall (6), two or more through-holes (8) are formed in a well bottom portion (4), the minimum width of the opening portion of the through holes (8) is 1 μm to 3.5 μm, and the ratio of the total opening area of the through-holes is 0.5% to 3.5%. Hypothesizing a minimum circumscribed circle (G1) surrounding all of the through-holes (8) of each well bottom part (4), when the center of the circumscribed circle (G1) is moved to any center of the plurality of through-holes (8), the minimum circumscribed circle (G2) after the movement at least partially overlaps with all of the plurality of through-holes (8).
B01D 29/01 - Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups Filtering elements therefor with flat filtering elements
C12N 1/00 - Microorganisms, e.g. protozoaCompositions thereofProcesses of propagating, maintaining or preserving microorganisms or compositions thereofProcesses of preparing or isolating a composition containing a microorganismCulture media therefor
C12M 1/28 - Inoculator or sampler being part of container
91.
WELL ARRAY FILTER, PARTICLE ALIGNMENT DEVICE, AND PARTICLE CAPTURING METHOD
In this well array filter (1), a plurality of wells (3) are formed in a filter main body (2), and opening portions of the wells (3) have a polygonal shape or a polygonal shape with rounded corners. An equivalent circle diameter of the opening portions of the wells (3) is from 5 to 200 μm inclusive, and at least one through-hole (8) is formed in a well bottom portion (4). Well separating walls (6) have a maximum thickness of 1 to 20 μm inclusive, a ratio of a total opening surface area of the wells (3) to a surface area of a well forming region is at least equal to 40%, and the wells (3) have a depth that is at least twice the thickness of the well separating walls (6).
B01D 29/01 - Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups Filtering elements therefor with flat filtering elements
C12M 1/28 - Inoculator or sampler being part of container
C12N 1/00 - Microorganisms, e.g. protozoaCompositions thereofProcesses of propagating, maintaining or preserving microorganisms or compositions thereofProcesses of preparing or isolating a composition containing a microorganismCulture media therefor
A device (1) provided with a plurality of units (3) having sample chambers (2) capable of individually accommodating cells or particles, wherein each unit (3) comprises a storage layer (5) having an accommodation part (4) corresponding to a sample chamber (2), and a structure (6) for circulating a liquid to the accommodation part (4), and the plurality of units (3) are independent of each other, with no circulation of the liquid therebetween.
C12M 1/34 - Measuring or testing with condition measuring or sensing means, e.g. colony counters
C12M 1/00 - Apparatus for enzymology or microbiology
C12M 3/00 - Tissue, human, animal or plant cell, or virus culture apparatus
C12N 1/00 - Microorganisms, e.g. protozoaCompositions thereofProcesses of propagating, maintaining or preserving microorganisms or compositions thereofProcesses of preparing or isolating a composition containing a microorganismCulture media therefor
C12N 1/02 - Separating microorganisms from their culture media
C12Q 1/02 - Measuring or testing processes involving enzymes, nucleic acids or microorganismsCompositions thereforProcesses of preparing such compositions involving viable microorganisms
G01N 37/00 - Details not covered by any other group of this subclass
93.
WELL ARRAY FILTER, WELL ARRAY DEVICE, AND METHOD FOR PRODUCING WELL ARRAY FILTER
This well array filter (1) includes a well bottom (21) having a through hole (23) of a size that does not allow an object including at least one of a cell, a particle, and a droplet to pass therethrough. The well array filter (1) comprises a well layer (10) having a plurality of well openings (11) of a size that allows the object to pass therethrough, and a support layer (20) that supports the well layer (10). The support layer (20) comprises a plurality of the well bottoms (21) corresponding to the well openings (11). At least a part between a plurality of the well bottoms (21) adjacent to each other in the support layer (20) is divided.
A resist composition containing a resin component (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-1) (In the formula, R is a hydrogen atom, a C1-5 alkyl group, or a C1-5 halogenated alkyl group; La01and La02are each independently a single bond or a divalent linking group; Ar is an aromatic ring; Ra01 is a substituent other than a hydroxy group; m1 is an integer greater than or equal to 0, provided that valence requirements are met; and Rpg is an acid-dissociable group represented by general formula (a0-pg).)
Provided are a resist composition in which the temporal stability during storage is increased and a decrease in fine resolution after storage is reduced, a resist pattern formation method using said resist composition, and a compound useful as an acid diffusion control agent to be used for the resist composition. The present invention uses a resist composition containing: a base material component (A) in which the solubility with respect to a developer changes by the action of an acid; and a compound (D0) represented by general formula (d0). In formula (d0), R1represents a saturated hydrocarbon group and I represents an iodine atom. R2represents a substituent group. Yd0represents a divalent linkage group or a single bond. j represents an integer of 0-3. k represents an integer of 1-4. At least one of Rb11, Rb12, Rb13, and Rb14represents a fluorine atom or a fluorinated alkyl group. Rb2and Rb3 each represent a hydrocarbon group or are bound to each other to form a ring together with a sulfur atom.
C07C 65/21 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups
The present invention provides a resist composition which generates an acid by being exposed to light, and the solubility of which in a developer solution is changed by the action of an acid. This resist composition contains: a resin component (A1), the solubility of which in a developer solution is changed by the action of an acid; and a compound (D0) which is represented by general formula (d0). In the formula, Rd01represents a monovalent organic group; Rd02represents a monovalent organic group or a hydrogen atom; and Ld01 represents a single bond or a divalent linking group.
C07C 281/02 - Compounds containing any of the groups e.g. carbazates
C07C 323/20 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and singly-bound oxygen atoms bound to the same carbon skeleton having the sulfur atom of at least one of the thio groups bound to a carbon atom of a six-membered aromatic ring of the carbon skeleton with singly-bound oxygen atoms bound to carbon atoms of the same non-condensed six-membered aromatic ring
This cleaning liquid for cleaning a substrate that has metal exposed on a surface thereof comprises a basic compound, an amino acid, and water, the cleaning liquid having the isoelectric point (pI) of the amino acid and the pH of the cleaning liquid at 23° that satisfy the condition of formula (1). The cleaning liquid does not contain a nitrogen heterocyclic compound, and the concentration of the basic compound relative to the total mass of the cleaning liquid is less than 12 mass%. (1): pI-2 < pH < pI+2
This cleaning liquid is for cleaning a substrate having a metal exposed on the surface thereof, and contains an alkanol hydroxylamine, a chelating agent, and water. The pH of the cleaning liquid at 23°C is lower than 10.
The present invention uses a negative-type photosensitive resin composition that includes a bisphenol novolac epoxy resin and a cationic polymerization initiator. The invention is characterized in that the weight-average molecular weight of the bisphenol novolac epoxy resin is at least 4000. A hollow structure (100) comprises a support body (10), a first cover layer (3), and a second cover layer (40) (top panel section), The hollow structure is configured so that a hollow section (50) is provided between the support body (10) and the first cover layer (30), and a plurality of holes (35) that penetrate from the hollow section (50) to the top panel section are formed in the first cover layer (30). This negative-type photosensitive resin composition is suitable as a photosensitive material to be used to form the top panel section of the hollow structure. With this negative-type photosensitive resin composition, regardless of manufacturing process conditions, a resin film can be stably formed on the first cover layer (30) having the holes (35), without the resin film flowing through the holes (35) of the first cover layer (30) into the hollow section (50).
G03F 7/32 - Liquid compositions therefor, e.g. developers
H01L 23/08 - ContainersSeals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H03H 9/25 - Constructional features of resonators using surface acoustic waves
effeffeff is the effective refractive index of the photonic crystal period structure); the order m meets the condition 3 ≤ m ≤ 7; and, if the radius of each of the pillars is R, the condition 0.25 ≤ R / a ≤ 0.35 is met.
H01L 33/10 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
patents
