A method for producing a plated article on a metal layer of a substrate which has the metal layer on a surface thereof, including forming a resist pattern to be used as a template for forming a plated article, using a photosensitive composition which includes a sulfur-containing compound and/or a nitrogen-containing compound each having a predetermined structure; before the plated article is formed, subjecting a surface made of metal exposed from a nonresist portion of the resist pattern to ashing; and detaching the resist pattern with a detaching liquid including a basic compound and then etching the metal layer which is on the substrate surface and on which the plated article has not been formed after the plated article formation.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/40 - Treatment after imagewise removal, e.g. baking
A polyimide resin precursor that yields a polyimide resin having a low dielectric loss tangent and excelling in a chemical resistance property; a production method for the polyimide resin precursor; a photosensitive resin composition including the polyimide resin precursor as a polymerizable resin a patterned resin film using the photosensitive resin composition, and a production method for the patterned polyimide resin film. A polymer of a diamine compound and a dicarboxylic acid which is a reactant with a tetracarboxylic dianhydride and an alcohol is used as the polyimide resin precursor, and a compound that either has a combination of a secondary hydroxyl group and an ethylenically unsaturated double bond, or has a combination of a methylol group and an ethylenically unsaturated double bond, is used as the aforementioned alcohol.
A resist composition including a resin component which has a constitutional unit derived from a compound represented by General Formula (a0-1) below and a constitutional unit containing a lactone-containing cyclic group. In General Formula (a0-1), W01 represents a polymerizable group-containing group, Ya01 represents a single bond or a divalent linking group, Ra01 represents an acid dissociable group, q represents an integer of 0 to 3, n represents an integer of 1 or greater and n≤q×2+4 is satisfied
A resist composition including a resin component which has a constitutional unit derived from a compound represented by General Formula (a0-1) below and a constitutional unit containing a lactone-containing cyclic group. In General Formula (a0-1), W01 represents a polymerizable group-containing group, Ya01 represents a single bond or a divalent linking group, Ra01 represents an acid dissociable group, q represents an integer of 0 to 3, n represents an integer of 1 or greater and n≤q×2+4 is satisfied
C08K 5/45 - Heterocyclic compounds having sulfur in the ring
C08K 5/46 - Heterocyclic compounds having sulfur in the ring with oxygen or nitrogen in the ring
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
4.
INSPECTION METHOD, RESIN SOLUTION, RESIST COMPOSITION OR THERMOSETTING COMPOSITION, METHOD OF PRODUCING RESIN COMPOSITION, AND METHOD OF PRODUCING RESIST COMPOSITION OR THERMOSETTING COMPOSITION
An inspection method including a step V of filtering a precursor composition V containing a polymer compound and a solvent V, a step X1 of coating a substrate X with a resin composition X containing the precursor composition to form a coating film X, a step X2 of removing the coating film X from the substrate X using a removal solvent X including at least one selected from the group consisting of an organic solvent X, an alkali developing solution X, and water; and a step X3 of measuring the number of defects on the substrate X after the coating film X is removed, using a defect inspection device.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G01N 21/956 - Inspecting patterns on the surface of objects
5.
RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND
A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed by an action of an acid, the resist composition including a resin component whose solubility in a developing solution is changed by an action of an acid, in which the resin component has a constitutional unit represented by General Formula (a0-1) in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a halogen atom, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya0 represents a single bond or a divalent linking group; Va0 represents a single bond or a linear or branched alkylene group; and Mm+ represents an m-valent cation
A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed by an action of an acid, the resist composition including a resin component whose solubility in a developing solution is changed by an action of an acid, in which the resin component has a constitutional unit represented by General Formula (a0-1) in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a halogen atom, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya0 represents a single bond or a divalent linking group; Va0 represents a single bond or a linear or branched alkylene group; and Mm+ represents an m-valent cation
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
A resist composition that generates an acid via light exposure, and whose solubility in a liquid developer changes through the action of the acid. The resist composition includes a base material component whose solubility in the liquid developer changes through the action of the acid, and an acid generating agent component that generates the acid via light exposure. The acid generating agent component includes a first acid generating agent and a second acid generating agent. The first acid generating agent and second acid generating agent include compounds represented by particular general formulas.
A resist composition containing a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) in which W01 represents a polymerizable group-containing group; RAr represents an aromatic group; Ra0 represents an acid dissociable group represented by General Formula (a0-r-1); Ra01 represents an aliphatic hydrocarbon group; Ra02, Ra03, and Ra04 represent a hydrocarbon group or a hydrogen atom; Ra01 and Ra02 may be bonded to each other to form an alicyclic structure; Ra03 and Ra04 may be bonded to each other to form an aromatic ring structure or an alicyclic structure. The alicyclic structure formed by Ra01 and Ra02 are bonded to each other and the aromatic ring structure or the alicyclic structure formed by Ra03 and Ra04 are bonded to each other or may be condensed to each other; and Ra05 represents a chain-like or alicyclic hydrocarbon group or a hydrogen atom
A resist composition containing a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) in which W01 represents a polymerizable group-containing group; RAr represents an aromatic group; Ra0 represents an acid dissociable group represented by General Formula (a0-r-1); Ra01 represents an aliphatic hydrocarbon group; Ra02, Ra03, and Ra04 represent a hydrocarbon group or a hydrogen atom; Ra01 and Ra02 may be bonded to each other to form an alicyclic structure; Ra03 and Ra04 may be bonded to each other to form an aromatic ring structure or an alicyclic structure. The alicyclic structure formed by Ra01 and Ra02 are bonded to each other and the aromatic ring structure or the alicyclic structure formed by Ra03 and Ra04 are bonded to each other or may be condensed to each other; and Ra05 represents a chain-like or alicyclic hydrocarbon group or a hydrogen atom
C07C 69/84 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring
C07C 69/92 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with etherified hydroxyl groups
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
A production method for a hollow structure consisting of a concave portion and a top plate portion that blocks an opening surface of the concave portion is adopted, the production method including forming at least one of a side wall or the top plate portion by using a laminate of a support and a resist layer, in which the support consists of a polyethylene terephthalate film having a light transmittance of 85% or more at a wavelength of 365 nm and a haze value of 1.0% or less when irradiated with light having a wavelength of 365 nm, the resist layer consists of a photosensitive layer formed of a negative photosensitive composition, and an operation of exposing the resist layer via the support and developing the laminate after the exposure with a developing solution containing an organic solvent to form a negative pattern. According to this production method, when the side wall or the top plate portion of the hollow structure is formed, it is possible to further improve lithography characteristics (shape and defect reduction) of a pattern, and the hollow structure can be stably produced.
B32B 7/05 - Interconnection of layers the layers not being connected over the whole surface, e.g. discontinuous connection or patterned connection
B32B 27/08 - Layered products essentially comprising synthetic resin as the main or only constituent of a layer next to another layer of a specific substance of synthetic resin of a different kind
B32B 37/24 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
B32B 38/00 - Ancillary operations in connection with laminating processes
B32B 38/10 - Removing layers, or parts of layers, mechanically or chemically
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
G03F 7/028 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE COMPOSITION, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE, AND METHOD OF MANUFACTURING PLATED ARTICLE
A chemically amplified positive-type photosensitive composition for forming a pattern serving as a template in a process of forming a plated article on a substrate having a metal layer on a surface thereof, the chemically amplified positive-type photosensitive composition being capable of easily forming a resist pattern having a cross-sectional shape in which a large undercut is formed and footing is suppressed. The chemically amplified positive-type photosensitive composition includes an acid generating agent that generates an acid by irradiation with an active ray or radiation, a resin having an alkali solubility that increases under action of an acid, a sulfur-containing compound containing a sulfur atom capable of coordinating with the metal layer, an acid diffusion suppressing agent, and an organic solvent, the resin containing an acrylic resin which contains a specific constituent unit, and the decomposition ratio (%) of the acid generating agent determined using specific steps is more than 0.5 and less than 10.
A resist composition including a base material component and a compound represented by General Formula (b0), in which Rpg represents an acid decomposable group, Rl0 represents a cyclic organic group which may have a substituent, L02 represents a divalent linking group, L01 represents a divalent linking group or a single bond, Rm1 represents a substituent other than an iodine atom, Vb0 represents a single bond, R0 represents a hydrogen atom, nb1 represents an integer of 1 to 4, nb2 represents an integer of 1 to 4, nb3 represents an integer of 0 to 3, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater
A resist composition including a base material component and a compound represented by General Formula (b0), in which Rpg represents an acid decomposable group, Rl0 represents a cyclic organic group which may have a substituent, L02 represents a divalent linking group, L01 represents a divalent linking group or a single bond, Rm1 represents a substituent other than an iodine atom, Vb0 represents a single bond, R0 represents a hydrogen atom, nb1 represents an integer of 1 to 4, nb2 represents an integer of 1 to 4, nb3 represents an integer of 0 to 3, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
11.
RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
A resist composition including a resin component which has a constitutional unit (a01) derived from a compound represented by General Formula (a0-1) and a constitutional unit (a02) derived from a compound represented by General Formula (a0-2), in which W01 and W02 represent a polymerizable group-containing group, Ya01 and Ya02 represent a single bond or a divalent linking group, Rax01 represents an acid dissociable group represented by Formula (a0-r-1) or (a0-r-2), q01 and q02 represent an integer of 0 to 3, n01 and n02 represent an integer of 1 or greater, Ra01 to Ra03 represent a hydrocarbon group, Ra04 represents a hydrocarbon group, Ra05a and Ra05b represent a hydrogen atom and Ra06 represents a hydrogen atom
A resist composition including a resin component which has a constitutional unit (a01) derived from a compound represented by General Formula (a0-1) and a constitutional unit (a02) derived from a compound represented by General Formula (a0-2), in which W01 and W02 represent a polymerizable group-containing group, Ya01 and Ya02 represent a single bond or a divalent linking group, Rax01 represents an acid dissociable group represented by Formula (a0-r-1) or (a0-r-2), q01 and q02 represent an integer of 0 to 3, n01 and n02 represent an integer of 1 or greater, Ra01 to Ra03 represent a hydrocarbon group, Ra04 represents a hydrocarbon group, Ra05a and Ra05b represent a hydrogen atom and Ra06 represents a hydrogen atom
A resist composition containing a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) in which Rm represents an alkyl group, a halogenated alkyl group, a halogen atom, or a hydrogen atom; L1 represents an aliphatic hydrocarbon group; n represents an integer of 0 to 2; Ra0 represents an acid dissociable group; Ra01 represents an aliphatic hydrocarbon group; Ra02, Ra03, and Ra04 represent a hydrocarbon group or a hydrogen atom; Ra01 and Ra02 may be bonded to each other to form an alicyclic structure; Ra03 and Ra04 may be bonded to each other to form an aromatic ring structure or an alicyclic structure; the alicyclic structure formed by Ra01 and Ra02 being bonded to each other and the aromatic ring structure or alicyclic structure formed by Ra03 and Ra04 being bonded to each other may be condensed to each other; and Ra05 represents a chain-like or alicyclic hydrocarbon group, or a hydrogen atom
A resist composition containing a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) in which Rm represents an alkyl group, a halogenated alkyl group, a halogen atom, or a hydrogen atom; L1 represents an aliphatic hydrocarbon group; n represents an integer of 0 to 2; Ra0 represents an acid dissociable group; Ra01 represents an aliphatic hydrocarbon group; Ra02, Ra03, and Ra04 represent a hydrocarbon group or a hydrogen atom; Ra01 and Ra02 may be bonded to each other to form an alicyclic structure; Ra03 and Ra04 may be bonded to each other to form an aromatic ring structure or an alicyclic structure; the alicyclic structure formed by Ra01 and Ra02 being bonded to each other and the aromatic ring structure or alicyclic structure formed by Ra03 and Ra04 being bonded to each other may be condensed to each other; and Ra05 represents a chain-like or alicyclic hydrocarbon group, or a hydrogen atom
A resist composition that generates an acid upon exposure and whose solubility with respect to a liquid developer changes by an action of the acid. The resist composition includes a base material component whose solubility with respect to a liquid developer changes by an action of an acid; an acid generating agent component that generates an acid upon exposure; and an acid diffusion control agent component, in which the acid generating agent component includes a compound represented by a general formula (b1-1)
A resist composition that generates an acid upon exposure and whose solubility with respect to a liquid developer changes by an action of the acid. The resist composition includes a base material component whose solubility with respect to a liquid developer changes by an action of an acid; an acid generating agent component that generates an acid upon exposure; and an acid diffusion control agent component, in which the acid generating agent component includes a compound represented by a general formula (b1-1)
A method for producing a structure having a phase-separated structure that can improve misalignment of a cylinder structure or line roughness and form alignment marks well. The method includes forming a layer including a block copolymer and having a thickness t on a substrate using a resin composition containing the block copolymer, and separating the layer into a cylinder structure. The thickness t is set such that a relationship between the thickness t and a period L0 of the block copolymer satisfies a specific formula.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
WATER-REPELLING AGENT FOR ELECTROCONDUCTIVE ARTICLE SURFACE, WATER-REPELLENCY-IMPARTING METHOD FOR ELECTROCONDUCTIVE ARTICLE SURFACE, METHOD FOR SELECTIVELY IMPARTING WATER REPELLENCY FOR REGION HAVING ELECTROCONDUCTIVE ARTICLE SURFACE, SURFACE TREATMENT METHOD, AND METHOD FOR FORMING FILM ON SELECTED REGION OF SUBSTRATE SURFACE
A water-repelling agent for an electroconductive article surface, including a compound that contains an aromatic ring, an adsorption group which is bonded to the aromatic ring and is an amino group, a phosphonic acid group, an acid anhydride group, a thiol group, or an acid chloride group, and a linear or branched alkyl group or a linear or branched fluorinated alkyl group bonded to the aromatic ring
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A photosensitive composition including a radically polymerizable compound (A), and a radical polymerization initiator (C), which tends to hardly occur excessive decrease of weight of a cured product and a component other than a solvent in the photosensitive composition, and having good curability, and a cued product of the photosensitive composition are provided. A compound having a specific structure including a radically polymerizable group-containing group and a radically polymerizable compound other than the compound having the specific structure are used in combination as a radically polymerizable compound (A) in a photosensitive composition including the radically polymerizable compound (A) and a radical polymerization initiator (C).
G03F 7/028 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
There are provided a processing solution, including: (a) a compound capable of releasing a fluoride anion or a salt thereof; (b) a water-soluble organic solvent; (c) water; and (d) a nitrogen-containing aromatic compound, in which an anion content of the nitrogen-containing aromatic compound at 25° C. is 5 ppm or more and 30 ppm or less; a method for processing a substrate; and a method for manufacturing a semiconductor.
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
There are provided a processing solution, including: (a) a compound capable of releasing a fluoride anion or a salt thereof; (b) a water-soluble organic solvent; (c) water; and (d) a nitrogen-containing aromatic compound, in which a mass ratio of a nonionic component of the nitrogen-containing aromatic compound to a total amount of ammonia and an ammonium ion at 35° C. is more than 0.5 and less than 1; a method for processing a substrate; and a method for manufacturing a semiconductor substrate.
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1), in which R01 represents a hydrogen atom, L01 represents a divalent linking group, Ra01 and Ra02 each independently represent a hydrocarbon group which may have a substituent, Ar01 represents an aryl group in which some or all hydrogen atoms are substituted with iodine atoms, and the aryl group may have a substituent other than the iodine atoms
A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1), in which R01 represents a hydrogen atom, L01 represents a divalent linking group, Ra01 and Ra02 each independently represent a hydrocarbon group which may have a substituent, Ar01 represents an aryl group in which some or all hydrogen atoms are substituted with iodine atoms, and the aryl group may have a substituent other than the iodine atoms
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
C07C 69/675 - Esters of carboxylic acids having esterified carboxyl groups bound to acyclic carbon atoms and having any of the groups OH, O-metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids of saturated hydroxy-carboxylic acids
C07C 69/76 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring
C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
20.
RESIST UNDERLAYER FILM FORMATION COMPOSITION, RESIST PATTERN FORMATION METHOD, FORMATION METHOD FOR RESIST UNDERLAYER FILM PATTERN, AND PATTERN FORMATION METHOD
A composition for forming a resist underlayer film, including a furan resin, a thermal acid generator component that generates an acid by heat, and a solvent; a resist pattern formation method including forming a resist underlayer film on a substrate using the composition, forming a resist film on the resist underlayer film using the resist composition, exposing the resist film to light, and developing the resist film exposed to light to form a resist pattern; and a formation method for a resist underlayer film pattern and a pattern formation method, including the resist pattern formation method.
A photocurable composition including an acrylic resin, an epoxy group-containing compound excluding a component corresponding to the acrylic resin, and a cationic polymerization initiator. The acrylic resin has a glass transition point of 0° C. or lower and has a constitutional unit derived from an epoxy group-containing acrylic monomer. A content proportion of the constitutional unit in a total amount of all constitutional units constituting the acrylic resin is greater than 0% by mass and less than 50% by mass.
C08G 59/40 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the curing agents used
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
G03F 7/085 - Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
22.
RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
A resist composition including a resin component that has a constitutional unit containing an acid decomposable group whose polarity is increased due to an action of an acid, a constitutional unit represented by General Formula (a10-1), and a constitutional unit represented by General Formula (a5-1), and a resin component that has a constitutional unit represented by General Formula (z1-1) and no acid dissociable group. In the formulae, Wax1 represents an aromatic hydrocarbon group, Ra5 represents an acid non-dissociable aliphatic cyclic group in which some carbon atoms forming a ring skeleton may be substituted with oxygen atoms, and Rz0 represents a hydrogen atom or a hydrocarbon group containing no acid dissociable group
A resist composition including a resin component that has a constitutional unit containing an acid decomposable group whose polarity is increased due to an action of an acid, a constitutional unit represented by General Formula (a10-1), and a constitutional unit represented by General Formula (a5-1), and a resin component that has a constitutional unit represented by General Formula (z1-1) and no acid dissociable group. In the formulae, Wax1 represents an aromatic hydrocarbon group, Ra5 represents an acid non-dissociable aliphatic cyclic group in which some carbon atoms forming a ring skeleton may be substituted with oxygen atoms, and Rz0 represents a hydrogen atom or a hydrocarbon group containing no acid dissociable group
A method of producing a resist composition purified product, the method including a step of filtering a resist composition through a filter having a porous structure in which adjacent spherical cells communicate with each other, in which the filter includes a porous membrane containing at least one resin selected from the group consisting of polyimide and polyamide-imide, the resist composition contains a resin component (A1) whose solubility in a developing solution is changed by an action of an acid and an organic solvent component, and the resin component (A1) contains a copolymer having a constitutional unit (a01) with an onium salt structure that generates sulfonic acid upon light exposure and a constitutional unit (a02) with an onium salt structure that generates a carboxylic acid upon light exposure.
A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) or a constitutional unit derived from a compound represented by General Formula (a0-2). In the formulae, R01 and R02 represent a hydrogen atom; L01 and L02 represent a single bond or a divalent linking group; Ar01 and Ar02 represent an aryl group substituted with iodine atoms; Xa01 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ar01 is bonded; Ra02 represents a hydrocarbon group which may have a substituent; and Xa02 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ra02 is bonded and a group which is bonded to Ar02 to form a condensed ring
A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) or a constitutional unit derived from a compound represented by General Formula (a0-2). In the formulae, R01 and R02 represent a hydrogen atom; L01 and L02 represent a single bond or a divalent linking group; Ar01 and Ar02 represent an aryl group substituted with iodine atoms; Xa01 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ar01 is bonded; Ra02 represents a hydrocarbon group which may have a substituent; and Xa02 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ra02 is bonded and a group which is bonded to Ar02 to form a condensed ring
There are provided a processing solution, including: an oxidizing agent (A), and hexafluorosilicic acid (B), in which a molar ratio of the content of the hexafluorosilicic acid (B) to the content of the oxidizing agent (A) is from 8 to 1900; a method for processing a substrate; and a method for manufacturing a semiconductor substrate.
A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed due to an action of the acid, in which a polymer compound having a constitutional unit derived from a compound represented by General formula (a0-1) is employed as a resin component whose solubility in a developing solution is changed due to the action of the acid. In General Formula (a0-1), W01 represents a polymerizable group-containing group, W02 represents an aromatic hydrocarbon group, Ya01 represents a divalent linking group or a single bond, Ra01 represents an acid dissociable group. Ra02 represents a chain-like hydrocarbon group which may have a substituent or an alicyclic hydrocarbon group which may have a substituent, m represents an integer of 1 or greater, and n represents an integer of 1 or greater
A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed due to an action of the acid, in which a polymer compound having a constitutional unit derived from a compound represented by General formula (a0-1) is employed as a resin component whose solubility in a developing solution is changed due to the action of the acid. In General Formula (a0-1), W01 represents a polymerizable group-containing group, W02 represents an aromatic hydrocarbon group, Ya01 represents a divalent linking group or a single bond, Ra01 represents an acid dissociable group. Ra02 represents a chain-like hydrocarbon group which may have a substituent or an alicyclic hydrocarbon group which may have a substituent, m represents an integer of 1 or greater, and n represents an integer of 1 or greater
A resist composition containing a resin, an acid generator, and a crosslinking agent, in which the resin is an alkali-soluble resin having a molar absorption coefficient of 2,000 mol−1·L·cm−1 or less at a wavelength of 248 nm, and the crosslinking agent is at least one of a melamine-based crosslinking agent, a urea-based crosslinking agent, an alkylene urea-based crosslinking agent, a glycoluril-based crosslinking agent, and an epoxy-based crosslinking agent.
A resin composition for forming a phase-separated structure that can improve a process margin. A resin composition for forming a phase-separated structure containing a predetermined block copolymer A and a predetermined block copolymer B, the composition having a ratio (L0B/L0A) of L0 of the block copolymer B (L0B) to L0 of the block copolymer A (L0A) of 0.70 or more and 1.20 or less.
C09D 153/00 - Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers
A photosensitive composition including a radically polymerizable compound (A), and a radical polymerization initiator (C), which tends to hardly occur excessive decrease of weight of a cured product and a component other than a solvent in the photosensitive composition, and having good curability, and a cued product of the photosensitive composition are provided. A compound having a specific structure including a radically polymerizable group-containing group and a radically polymerizable compound other than the compound having the specific structure are used in combination as a radically polymerizable compound (A) in a photosensitive composition including the radically polymerizable compound (A) and a radical polymerization initiator (C).
G03F 7/028 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
A surface treatment agent including a compound (P) represented by R1—P(═O)(OR2)(OR3) in which R1 is an alkyl group, an alkoxy group, a fluorinated alkyl group, or an aromatic hydrocarbon group which may have a substituent, and R2 and R3 are each independently a hydrogen atom, an alkyl group, a fluorinated alkyl group, or an aromatic hydrocarbon group which may have a substituent; a compound (S) represented by R—SH . . . in which R is an alkyl group having 3 or more carbon atoms, a fluorinated alkyl group having 3 or more carbon atoms, or an aromatic hydrocarbon group which may have a substituent; and a solvent.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
31.
RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD
A resist composition containing a resin component that exhibits changed solubility in a developing solution under action of an acid, a photodecomposable base, and a fluorine additive component. The fluorine additive component includes a polymeric compound having a constitutional unit represented by General Formula (f01-1) and a constitutional unit represented by General Formula (f02-1). In the formulas, R represents a hydrogen atom; Vf01 represents an alkylene group or a halogenated alkylene group; Yf01 represents —CO—O— or —O—CO—; Rf01 represents an organic group containing a fluorine atom; Vf02 represents a divalent hydrocarbon group; Rf02 represents an acid dissociable group represented by General Formula (f02-r1-1); Rf021, Rf022, Rf023, Rf024, and Rf025 represent a hydrocarbon group; and Yf02 represents a quaternary carbon atom
A resist composition containing a resin component that exhibits changed solubility in a developing solution under action of an acid, a photodecomposable base, and a fluorine additive component. The fluorine additive component includes a polymeric compound having a constitutional unit represented by General Formula (f01-1) and a constitutional unit represented by General Formula (f02-1). In the formulas, R represents a hydrogen atom; Vf01 represents an alkylene group or a halogenated alkylene group; Yf01 represents —CO—O— or —O—CO—; Rf01 represents an organic group containing a fluorine atom; Vf02 represents a divalent hydrocarbon group; Rf02 represents an acid dissociable group represented by General Formula (f02-r1-1); Rf021, Rf022, Rf023, Rf024, and Rf025 represent a hydrocarbon group; and Yf02 represents a quaternary carbon atom
C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
CURABLE COMPOSITION FOR FORMING LOW REFRACTIVE INDEX FILM, LOW REFRACTIVE INDEX FILM, OPTICAL DEVICE, AND METHOD FOR PRODUCING LOW REFRACTIVE INDEX FILM
To provide a curable composition for forming a low refractive index film of which a cured film excellent in heat resistance can be formed. A curable composition for forming a low refractive index film containing a hollow filler (A), a polymerizable compound (B), and a polymerization initiator (C), and not containing an alkali-soluble resin. The polymerizable compound (B) includes a compound (B1) having 5 or more polymerizable functional groups and a compound (B2) having 1 or more and 3 or less polymerizable functional groups. A ratio (B1/B2) of a mass of the compound (B1) to a mass of the compound (B2) is 0.25 or more and 3 or less.
A photocurable composition including an acrylic resin, an epoxy group-containing compound (excluding a component corresponding to the acrylic resin), and a cationic polymerization initiator. The acrylic resin has a glass transition point of 0° C. or lower. In such a photocurable composition, a cured film obtained by curing the photocurable composition has an elastic modulus of 2.0×106 [Pa] or greater and 1.0×109 [Pa] or less at a temperature of 80° C. when the viscoelasticity of the cured film is measured at a frequency of 1 Hz.
A resist composition including a polymer compound having a constitutional unit represented by General Formula (a10-1) below, an onium salt-based acid generator, a crosslinking agent, and a polynuclear phenol low-molecular-weight compound containing 5 or less phenyl groups, in which the resist composition has a solid content concentration of 15% by mass or greater. In the formula, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Yax1 represents a single bond or a divalent linking group; Wax1 represents an aromatic hydrocarbon group which may have a substituent; and nax1 represents an integer of 1 or greater
A resist composition including a polymer compound having a constitutional unit represented by General Formula (a10-1) below, an onium salt-based acid generator, a crosslinking agent, and a polynuclear phenol low-molecular-weight compound containing 5 or less phenyl groups, in which the resist composition has a solid content concentration of 15% by mass or greater. In the formula, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Yax1 represents a single bond or a divalent linking group; Wax1 represents an aromatic hydrocarbon group which may have a substituent; and nax1 represents an integer of 1 or greater
A method for producing a structure body including a phase-separated, the method including (i) applying a composition containing a block copolymer represented by Formula (n1) onto a substrate to form an undercoat agent layer, (ii) applying the composition containing the block copolymer onto the undercoat agent layer to form a self-organization layer, and (iii) subjecting the self-organization layer to phase separation. In General Formula (n1), A represents a first polymer block, B represents a second polymer block, R1c and R1d represent a substrate adsorptive group-containing group, R2c and R2d represent a substituent other than the substrate adsorptive group-containing group, m1 and n1 represent an integer of 0 to 5, m2 and n2 represent an integer of 0 to 5, m1+n1 >1, m1+m2<5, and n1+n2<5
A method for producing a structure body including a phase-separated, the method including (i) applying a composition containing a block copolymer represented by Formula (n1) onto a substrate to form an undercoat agent layer, (ii) applying the composition containing the block copolymer onto the undercoat agent layer to form a self-organization layer, and (iii) subjecting the self-organization layer to phase separation. In General Formula (n1), A represents a first polymer block, B represents a second polymer block, R1c and R1d represent a substrate adsorptive group-containing group, R2c and R2d represent a substituent other than the substrate adsorptive group-containing group, m1 and n1 represent an integer of 0 to 5, m2 and n2 represent an integer of 0 to 5, m1+n1 >1, m1+m2<5, and n1+n2<5
C09D 153/00 - Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers
C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers
37.
BLOCK COPOLYMER, UNDERCOAT AGENT, RESIN COMPOSITION FOR FORMING PHASE-SEPARATED STRUCTURE, AND METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE
A block copolymer represented by General Formula (n1) in which A represents a first polymer block, B represents a second polymer block, R1c and R1d each independently represents a substrate adsorptive group-containing group, R2c and R2d each independently represents a substituent other than the substrate adsorptive group-containing group, m1 and n1 each independently represents an integer of 0 to 5, m2 and n2 each independently represents an integer of 0 to 5, m1+n1≥1, m1+m2≤5, and n1+n2≤5
A block copolymer represented by General Formula (n1) in which A represents a first polymer block, B represents a second polymer block, R1c and R1d each independently represents a substrate adsorptive group-containing group, R2c and R2d each independently represents a substituent other than the substrate adsorptive group-containing group, m1 and n1 each independently represents an integer of 0 to 5, m2 and n2 each independently represents an integer of 0 to 5, m1+n1≥1, m1+m2≤5, and n1+n2≤5
C09D 183/10 - Block or graft copolymers containing polysiloxane sequences
C08G 81/02 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
C09D 5/20 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects producedFilling pastes for coatings strippable as coherent films, e.g. temporary coatings strippable as coherent films
38.
RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND ACID GENERATOR
A resist composition including a base material component and a compound represented by General Formula (b0), in which Rb0 represents a fused cyclic group in which an aromatic ring and an alicyclic ring are fused, the alicyclic ring in the fused cyclic group has substituents, at least one of the substituents contains a hydrocarbon group having a bromine atom or an iodine atom, Yb0 represents a divalent linking group or a single bond, Yb0 is bonded to the alicyclic ring in the fused cyclic group, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a fluorinated alkyl group having 1 to 5 carbon atoms or a fluorine atom, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater
A resist composition including a base material component and a compound represented by General Formula (b0), in which Rb0 represents a fused cyclic group in which an aromatic ring and an alicyclic ring are fused, the alicyclic ring in the fused cyclic group has substituents, at least one of the substituents contains a hydrocarbon group having a bromine atom or an iodine atom, Yb0 represents a divalent linking group or a single bond, Yb0 is bonded to the alicyclic ring in the fused cyclic group, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a fluorinated alkyl group having 1 to 5 carbon atoms or a fluorine atom, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
A method for producing an acid generator including reacting a carboxylic acid represented by Formula (d0-1) having a pKa of 0.50 or more with at least one of a nitrogen-containing base compound and an onium compound to obtain an intermediate represented by Formula (d0-p), and subjecting the intermediate (d0-p) to an ion exchange reaction with a compound represented by Formula (c0) to obtain a compound represented by Formula (d0). In the formulae, X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, nb1 represents an integer in a range of 1 to 5, 1≤nb1+nb2≤5 is satisfied, Yd represents a divalent linking group or a single bond, Mpm′+ represents an organic ammonium cation having a logPOW of 4.8 or less or an onium cation having a logPOW of 4.8 or less, X− represents a counter anion, and Mm+ represents an onium cation.
A method for producing an acid generator including reacting a carboxylic acid represented by Formula (d0-1) having a pKa of 0.50 or more with at least one of a nitrogen-containing base compound and an onium compound to obtain an intermediate represented by Formula (d0-p), and subjecting the intermediate (d0-p) to an ion exchange reaction with a compound represented by Formula (c0) to obtain a compound represented by Formula (d0). In the formulae, X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, nb1 represents an integer in a range of 1 to 5, 1≤nb1+nb2≤5 is satisfied, Yd represents a divalent linking group or a single bond, Mpm′+ represents an organic ammonium cation having a logPOW of 4.8 or less or an onium cation having a logPOW of 4.8 or less, X− represents a counter anion, and Mm+ represents an onium cation.
A resist composition containing a base component, an acid generator component, and an acid diffusion-controlling agent. The acid generator component includes a compound having a molar absorption coefficient of 50,000 mol−1·L·cm−1 or less at an exposure wavelength of 193 nm, and the acid diffusion-controlling agent includes a compound represented by General Formula (d0), in which Rd01 represents a cyclic group or a chain alkenyl group which may have a substituent, Yd01 represents a divalent linking group containing an oxygen atom, m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation
A resist composition containing a base component, an acid generator component, and an acid diffusion-controlling agent. The acid generator component includes a compound having a molar absorption coefficient of 50,000 mol−1·L·cm−1 or less at an exposure wavelength of 193 nm, and the acid diffusion-controlling agent includes a compound represented by General Formula (d0), in which Rd01 represents a cyclic group or a chain alkenyl group which may have a substituent, Yd01 represents a divalent linking group containing an oxygen atom, m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation
Rd01-Yd01-CH2—SO3⊖(Mm⊕)1/m (d0)
A resin composition for forming a phase-separated structure, the resin composition containing a first block copolymer having a first a block and a first b block, a second block copolymer having a second a block and a second b block, a homopolymer A compatible with the first a block and the second a block, and a homopolymer B compatible with the first b block and the second b block, in which a constitutional unit constituting the first a block and a constitutional unit constituting the second a block are the same, a constitutional unit constituting the first b block and a constitutional unit constituting the second b block are the same, and a number-average molecular weight of the second block copolymer is larger than a number-average molecular weight of the first block copolymer.
C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers
42.
CLEANING SOLUTION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR
There are provided a cleaning solution, including: an oxoacid having an acid dissociation constant pka of less than 5.0 and a valence of two or more, in which a value of pH of the cleaning solution is smaller than the acid dissociation constant; a method for cleaning a semiconductor substrate using the same; and a method for manufacturing a semiconductor.
A processing solution for a semiconductor device including a fluorine-containing compound, water, a cyclic ether compound, and a water-soluble organic solvent that is not the cyclic ether compound; a method for processing a substrate; and a method for manufacturing a semiconductor device.
A resist composition which generates an acid upon exposure to light and whose solubility in a developing solution is changed under action of an acid, the resist composition containing a resin component whose solubility in a developing solution is changed under action of an acid, in which the resin component has a constitutional unit derived from a compound represented by General Formula (a0) in which W represents a polymerizable group, Ar represents an aromatic hydrocarbon group, —OH represents a hydroxy group, La0 represents a divalent linking group, Ya0 represents a single bond or a divalent linking group, Ra01 and Ra02 each independently represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group, n0 represents an integer in a range of 1 to 4, m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation.
A treatment liquid containing a fluorine-containing compound, an organic solvent, a basic compound represented by General Formula NR1R2R3, and water, in which a content of the organic solvent is 65% by mass or more with respect to a total amount of the treatment liquid, and a pH is 6 to 9. In the formula, R1 to R3 are each independently a hydrogen atom or a hydrocarbon group which may have a substituent.
A resist composition containing a resin component (A1) and a photodecomposable base (D0) represented by General Formula (d0) that generates a carboxylic acid having a pKa of 0.50 or more as a generated acid. In the formula, Rm represents a hydrogen atom or a hydroxy group, X0 represents a bromine atom or an iodine atom, Yd0 represents a divalent linking group or a single bond, Rb1 represents a fluorine atom or a fluorinated alkyl group, p01 represents an integer in a range of 1 to 5, and Rb2 and Rb3 are hydrocarbon groups, provided that at least one Rb1 is bonded to an ortho-position or a meta-position of a benzene ring, and the number of all fluorine atoms contained in —F and/or —CFRx1Rx2 bonded to an aromatic ring bonded to the sulfur atom in the formula is 3 or more, and Rx1 and Rx2 represent a fluorine atom or a hydrogen atom
A resist composition containing a resin component (A1) and a photodecomposable base (D0) represented by General Formula (d0) that generates a carboxylic acid having a pKa of 0.50 or more as a generated acid. In the formula, Rm represents a hydrogen atom or a hydroxy group, X0 represents a bromine atom or an iodine atom, Yd0 represents a divalent linking group or a single bond, Rb1 represents a fluorine atom or a fluorinated alkyl group, p01 represents an integer in a range of 1 to 5, and Rb2 and Rb3 are hydrocarbon groups, provided that at least one Rb1 is bonded to an ortho-position or a meta-position of a benzene ring, and the number of all fluorine atoms contained in —F and/or —CFRx1Rx2 bonded to an aromatic ring bonded to the sulfur atom in the formula is 3 or more, and Rx1 and Rx2 represent a fluorine atom or a hydrogen atom
A photosensitive composition which tends to hardly occur excessive decrease of weight of a component (in which is a component other than a solvent, when the composition or the photosensitive composition includes the solvent) in the composition or the photosensitive composition by heating, and includes inorganic microparticles in a stably dispersed state, a cured product of the photosensitive composition, a compound which can be preferably added to the composition and the photosensitive composition, and a production method of the compound are provided. In a composition including a photopolymerizable compound (A) and inorganic microparticles (B) or a photosensitive composition including a photopolymerizable compound (A), inorganic microparticles (B), and an initiator, a compound with a specific structure having a radically polymerizable group-containing group or a cationically polymerizable group-containing group is used as the photopolymerizable compound (A).
G03F 7/028 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
C07D 217/02 - Heterocyclic compounds containing isoquinoline or hydrogenated isoquinoline ring systems with only hydrogen atoms or radicals containing only carbon and hydrogen atoms, directly attached to carbon atoms of the nitrogen-containing ringAlkylene-bis-isoquinolines
C07D 277/74 - Sulfur atoms substituted by carbon atoms
A method for processing a substrate, for processing a surface of a substrate having projections/depressions formed on the surface, the method having: a rinsing step S101 of rinsing the surface of the substrate with a rinsing solution containing water; a chemical solution replacement step S102 of bringing a chemical solution into contact with the surface of the substrate that has been rinsed, to replace a liquid adhering to the surface of the substrate from the rinsing solution to the chemical solution; a state change step S103 of raising a temperature of the substrate wetted with the chemical solution to a temperature equal to or higher than the critical temperature of the chemical solution to allow the chemical solution to reach a supercritical state; and a removing step S104 of removing the chemical solution in the supercritical state from the surface of the substrate, in which the chemical solution contains an organic solvent (S1) (excluding, however, organic solvents having a fluorine atom) having a higher specific gravity than water.
A cleaning liquid for removing an etching residue containing a titanium component, the cleaning liquid including a compound represented by General Formula (a1) below, in which the cleaning liquid has a pH of 6 or greater, which is measured at 23° C., in which R represents an organic group or a hydrogen atom
A cleaning liquid for removing an etching residue containing a titanium component, the cleaning liquid including a compound represented by General Formula (a1) below, in which the cleaning liquid has a pH of 6 or greater, which is measured at 23° C., in which R represents an organic group or a hydrogen atom
A cleaning liquid that removes an etching residue containing a titanium component, the cleaning liquid including a compound represented by General Formula (a1) and a compound (B) represented by General Formula (b1). In formula (a1), Ra0 represents a monovalent organic group containing a hydroxy group or a carboxy group, or a hydrogen atom. In formula (b1), Rb0 represents a monovalent organic group or a hydrogen atom
A cleaning liquid that removes an etching residue containing a titanium component, the cleaning liquid including a compound represented by General Formula (a1) and a compound (B) represented by General Formula (b1). In formula (a1), Ra0 represents a monovalent organic group containing a hydroxy group or a carboxy group, or a hydrogen atom. In formula (b1), Rb0 represents a monovalent organic group or a hydrogen atom
An etching solution, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by formula (1) below, and water, a mass of the oxidizing agent is 20 mass % or more with respect to a mass of the etching solution,
An etching solution, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by formula (1) below, and water, a mass of the oxidizing agent is 20 mass % or more with respect to a mass of the etching solution,
An etching solution, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by formula (1) below, and water, a mass of the oxidizing agent is 20 mass % or more with respect to a mass of the etching solution,
and R1 and R2 each independently represents a hydrogen atom, a halogen atom, an alkyl group, a fluoroalkyl group, or an alkoxy group, and R3 and R4 each independently represents a halogen atom, a hydroxy group, an alkyl group, a fluoroalkyl group, or an alkoxy group.
An etching solution having excellent etching selectivity, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by the following formula (1), a carboxylic acid as a solvent, and water,
An etching solution having excellent etching selectivity, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by the following formula (1), a carboxylic acid as a solvent, and water,
An etching solution having excellent etching selectivity, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by the following formula (1), a carboxylic acid as a solvent, and water,
and R1 and R2 each independently represents a hydrogen atom, a halogen atom, an alkyl group, a fluoroalkyl group, or an alkoxy group, and R3 and R4 each independently represents a halogen atom, a hydroxy group, an alkyl group, a fluoroalkyl group, or an alkoxy group.
A method of forming a surface treatment film on a substrate having, on a surface thereof, a first region where an insulator is exposed and a second region where at least one metallic matter is exposed, in which the surface treatment film is formed on the second region and is capable of suppressing intrusion of the surface treatment film onto the first region. A method of forming a surface treatment film, including preparing the substrate, oxidizing a surface of the second region, and forming a surface treatment film on the second region by exposing a surface of the substrate after the oxidation to a surface-treatment agent including a thiol having 8 or less carbon atoms.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A photosensitive composition which tends to hardly occur excessive decrease of weight of a component (in which is a component other than a solvent, when the composition or the photosensitive composition includes the solvent) in the composition or the photosensitive composition by heating, and include inorganic microparticles in a stably dispersed state, a cured product of the photosensitive composition, a compound which can be preferably added to the composition and the photosensitive composition, and a production method of the compound are provided. In a composition including a photopolymerizable compound (A) and inorganic microparticles (B) or a photosensitive composition including a photopolymerizable compound (A), inorganic microparticles (B), and an initiator, a compound with a specific structure having a radically polymerizable group-containing group or a cationically polymerizable group-containing group is used as the photopolymerizable compound (A).
C07C 319/14 - Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides
C07C 319/20 - Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides by reactions not involving the formation of sulfide groups
C07C 323/19 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and singly-bound oxygen atoms bound to the same carbon skeleton having the sulfur atom of at least one of the thio groups bound to a carbon atom of a six-membered aromatic ring of the carbon skeleton with singly-bound oxygen atoms bound to acyclic carbon atoms of the carbon skeleton
C07C 323/20 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and singly-bound oxygen atoms bound to the same carbon skeleton having the sulfur atom of at least one of the thio groups bound to a carbon atom of a six-membered aromatic ring of the carbon skeleton with singly-bound oxygen atoms bound to carbon atoms of the same non-condensed six-membered aromatic ring
A resist composition containing a base material component (A) and a compound represented by General Formula (d0), in which Rd0 represents a condensed cyclic group in which an aromatic ring and an alicyclic ring are condensed, the alicyclic ring in the condensed cyclic group has a substituent, at least one of the substituents includes a hydrocarbon group having a bromine atom or a hydrocarbon group having an iodine atom, Yd0 represents a divalent linking group or a single bond, Yd0 is bonded to the alicyclic ring in the condensed cyclic group, Mm+ represents an m-valent organic cation, m represents an integer of 1 or more
A resist composition containing a base material component (A) and a compound represented by General Formula (d0), in which Rd0 represents a condensed cyclic group in which an aromatic ring and an alicyclic ring are condensed, the alicyclic ring in the condensed cyclic group has a substituent, at least one of the substituents includes a hydrocarbon group having a bromine atom or a hydrocarbon group having an iodine atom, Yd0 represents a divalent linking group or a single bond, Yd0 is bonded to the alicyclic ring in the condensed cyclic group, Mm+ represents an m-valent organic cation, m represents an integer of 1 or more
A resin composition for forming an etching mask pattern containing a block copolymer having a first block and a second block, and a homopolymer having a number-average molecular weight of less than 3,000. The first block is a polymer of a constitutional unit represented by Formula (b1) and the second block is a random copolymer of a constitutional unit represented by Formula (b2m) and a constitutional unit represented by Formula (b2g). The proportion of the volume of the first block is 20% to 80% by volume. The homopolymer includes a polymer of the constitutional unit represented by Formula (b1). In the formulas illustrated below, R1 is an alkyl group, Rb1 is a hydrogen atom or a methyl group, n is an integer of 0 to 5, R2 is an alkyl group, R3 is an alkylene group, Rb2 is a hydrogen atom or the like, and x is more than 0 and less than 1
A resin composition for forming an etching mask pattern containing a block copolymer having a first block and a second block, and a homopolymer having a number-average molecular weight of less than 3,000. The first block is a polymer of a constitutional unit represented by Formula (b1) and the second block is a random copolymer of a constitutional unit represented by Formula (b2m) and a constitutional unit represented by Formula (b2g). The proportion of the volume of the first block is 20% to 80% by volume. The homopolymer includes a polymer of the constitutional unit represented by Formula (b1). In the formulas illustrated below, R1 is an alkyl group, Rb1 is a hydrogen atom or a methyl group, n is an integer of 0 to 5, R2 is an alkyl group, R3 is an alkylene group, Rb2 is a hydrogen atom or the like, and x is more than 0 and less than 1
C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers
57.
METHOD FOR MANUFACTURING ETCHING MASK PATTERN, AND RESIN COMPOSITION FOR FORMING ETCHING MASK PATTERN
A manufacturing method including applying a resin composition for forming an etching mask pattern onto a support to form a layer containing a block copolymer and having a film thickness of 25 nm or more, and phase-separating the layer. The resin composition contains a block copolymer having a first block and a second block, the first block is includes a constitutional unit having General Formula (b1), and the second block is a random copolymer of a constitutional unit of General Formula (b2m) and a constitutional unit of General Formula (b2g). In the formulas illustrated below, R1 is an alkyl group which may have an oxygen atom or a silicon atom; R2 is an alkyl group; R3 is an alkylene group; and x represents a molar ratio and is more than 0 and 0.10 or less
A manufacturing method including applying a resin composition for forming an etching mask pattern onto a support to form a layer containing a block copolymer and having a film thickness of 25 nm or more, and phase-separating the layer. The resin composition contains a block copolymer having a first block and a second block, the first block is includes a constitutional unit having General Formula (b1), and the second block is a random copolymer of a constitutional unit of General Formula (b2m) and a constitutional unit of General Formula (b2g). In the formulas illustrated below, R1 is an alkyl group which may have an oxygen atom or a silicon atom; R2 is an alkyl group; R3 is an alkylene group; and x represents a molar ratio and is more than 0 and 0.10 or less
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
C08F 287/00 - Macromolecular compounds obtained by polymerising monomers on to block polymers
C09D 151/00 - Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers
A resin composition for forming an etching mask pattern, with which a phase-separated structure having a period (L0) of less than 20 nm and having excellent vertical orientation even when subjected to high-temperature annealing can be obtained; and a method for manufacturing an etching mask pattern. The method includes applying the resin composition onto a support to form a block copolymer layer having a film thickness of 25 nm or more and phase-separating the block copolymer layer. The resin composition contains a block copolymer having a first block and a second block, the first block includes a structure of General Formula (b1), and the second block consists of a block 2M of a structure of General Formula (b2m) and a block 2G of a structure of General Formula (b2g), and y/(y+z) is 0.01 or more and 0.11 or less; R1 is an alkyl group, R2 is an alkyl group; and R3 is an alkylene group
A resin composition for forming an etching mask pattern, with which a phase-separated structure having a period (L0) of less than 20 nm and having excellent vertical orientation even when subjected to high-temperature annealing can be obtained; and a method for manufacturing an etching mask pattern. The method includes applying the resin composition onto a support to form a block copolymer layer having a film thickness of 25 nm or more and phase-separating the block copolymer layer. The resin composition contains a block copolymer having a first block and a second block, the first block includes a structure of General Formula (b1), and the second block consists of a block 2M of a structure of General Formula (b2m) and a block 2G of a structure of General Formula (b2g), and y/(y+z) is 0.01 or more and 0.11 or less; R1 is an alkyl group, R2 is an alkyl group; and R3 is an alkylene group
C08F 297/02 - Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
59.
RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
A resist composition including a resin component having a constitutional unit represented by General Formula (a0-1) and a compound represented by General Formula (d0-1). In General Formula (a0-1), R0 represents a hydrogen atom, an alkyl group, a halogen atom, or a halogenated alkyl group; Vax0 represents a single bond or a divalent linking group; Wa represents a divalent aromatic hydrocarbon group; Va0 represents a divalent hydrocarbon group; na0 represents an integer of 0 to 2; and Ra00 represents an acid dissociable group. In General Formula (d0-1), X0 represents a bromine atom or an iodine atom; Rm represents a hydroxy group, an alkyl group, a fluorine atom, or a chlorine atom; nd1 represents an integer of 1 to 5; nd2 represents an integer of 0 to 4; Yd0 represents a divalent linking group or a single bond; Mm+ represents an m-valent organic cation; and m represents an integer of 1 or greater
A resist composition including a resin component having a constitutional unit represented by General Formula (a0-1) and a compound represented by General Formula (d0-1). In General Formula (a0-1), R0 represents a hydrogen atom, an alkyl group, a halogen atom, or a halogenated alkyl group; Vax0 represents a single bond or a divalent linking group; Wa represents a divalent aromatic hydrocarbon group; Va0 represents a divalent hydrocarbon group; na0 represents an integer of 0 to 2; and Ra00 represents an acid dissociable group. In General Formula (d0-1), X0 represents a bromine atom or an iodine atom; Rm represents a hydroxy group, an alkyl group, a fluorine atom, or a chlorine atom; nd1 represents an integer of 1 to 5; nd2 represents an integer of 0 to 4; Yd0 represents a divalent linking group or a single bond; Mm+ represents an m-valent organic cation; and m represents an integer of 1 or greater
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
A chip for cell culture, including a laminate having a flow path structure inside, in which respective members constituting respective layers of the laminate are adhered by adhesive layers, and the adhesive layer includes a first adhesive layer formed of an adhesive that contains a polyester-based resin having a glass transition temperature of 37° C. or higher and 120° C. or lower.
A resist composition including a resin component (A1), a compound (B0) represented by General Formula (b0), and a photodegradable base (D0) that has a carboxylic acid with a pKa of 0.3 to 2.5 as a generated acid. In formula (b0), Rb11 to Rb13 represent a halogen atom, Rb21 to Rb23 each independently represents a hydrogen atom, mb1, nb1, and ob1 represent an integer of 2 to 5, mb2 represents an integer of 5-mb1, nb2 represents an integer of 5-nb1, ob2 represents an integer of 5-ob1, R101 represents a cyclic group, R102 represents a fluorinated alkyl group or a fluorine atom, Y101 represents a divalent linking group having an oxygen atom or a single bond, and V101 represents a single bond, an alkylene group, or a fluorinated alkylene group
A resist composition including a resin component (A1), a compound (B0) represented by General Formula (b0), and a photodegradable base (D0) that has a carboxylic acid with a pKa of 0.3 to 2.5 as a generated acid. In formula (b0), Rb11 to Rb13 represent a halogen atom, Rb21 to Rb23 each independently represents a hydrogen atom, mb1, nb1, and ob1 represent an integer of 2 to 5, mb2 represents an integer of 5-mb1, nb2 represents an integer of 5-nb1, ob2 represents an integer of 5-ob1, R101 represents a cyclic group, R102 represents a fluorinated alkyl group or a fluorine atom, Y101 represents a divalent linking group having an oxygen atom or a single bond, and V101 represents a single bond, an alkylene group, or a fluorinated alkylene group
A film-forming composition including a polyhedral oligomeric silsesquioxane represented by General Formula (a1), an acid generating agent component, and a crosslinking agent component. In Formula (a1), R1 to R8 represent an aromatic group containing a phenolic hydroxyl group, a hydrocarbon group having 1 to 10 carbon atoms, or a hydrogen atom; at least one of R1 to R8 represents an aromatic group containing a phenolic hydroxyl group; L1 to L8 represent a specific divalent linking group at least one of L1 to L8 represents a divalent linking group represented by General Formula (a1-L-2) or General Formula (a1-L-3), ZX and ZY represent a hydrocarbon group having 1 to 6 carbon atoms or a hydrogen atom, and n2 and n3 represent an integer of 0 to 10).
A chip for cell culture, including a laminate having a flow path structure inside, in which the laminate includes a bottom plate substrate, a flow path substrate in which a flow path is formed by laser processing, and a top plate substrate in this order, and the flow path substrate includes a resin having a glass transition temperature of 37° C. or higher, an elastic modulus at 25° C. of 1×109 Pa or more, and an elastic modulus at 150° C. of 1×107 Pa or less.
A resist composition containing a polymeric compound having a constitutional unit containing a phenolic hydroxyl group, an acid generator, at least one crosslinking agent among a melamine-based crosslinking agent, a urea-based crosslinking agent, an alkylene urea-based crosslinking agent, a glycoluril-based crosslinking agent, and an epoxy-based crosslinking agent, and a polyether compound, a content of which is less than 50 parts by mass with respect to 100 parts by mass of the polymeric compound.
A photocurable liquid composition capable of forming a cured product in which localization of metal oxide nanoparticles is suppressed, a cured product of the photocurable liquid composition, and a method for producing a cured product using the photocurable liquid composition. As a photopolymerizable monomer, a polyfunctional monomer having 3 or more ethylenically unsaturated double bond is added to the photocurable liquid composition including the photopolymerizable monomer, metal oxide nanoparticles, and a photopolymerization initiator.
A resist composition that contains a resin component having a constitutional unit containing an acid-dissociable group represented by General Formula (a01-r) below and contains an acid generator component containing a compound represented by General Formula (b0) below. In General Formula (a01-r), Ra01 and Ra02 represent a saturated aliphatic hydrocarbon group, Ra01 and Ra02 may be bonded to each other to form an alicyclic group. Ra03 to Ra05 represent an aliphatic hydrocarbon group and two or more of Ra03 to Ra05 may be bonded to each other to form an alicyclic group. In General Formula (b-0), X0 represents an iodine atom, Rm represents a hydroxy group, nb1 represents an integer in a range of 1 to 5, nb2 represents an integer in a range of 0 to 4, 1≤nb1+nb2≤5, Yb0 represents a divalent linking group, Vb0 represents an alkylene group, R0 represents a fluorinated alkyl group having 1 to 5 carbon atoms, and Mm+ represents an m-valent organic cation
A resist composition that contains a resin component having a constitutional unit containing an acid-dissociable group represented by General Formula (a01-r) below and contains an acid generator component containing a compound represented by General Formula (b0) below. In General Formula (a01-r), Ra01 and Ra02 represent a saturated aliphatic hydrocarbon group, Ra01 and Ra02 may be bonded to each other to form an alicyclic group. Ra03 to Ra05 represent an aliphatic hydrocarbon group and two or more of Ra03 to Ra05 may be bonded to each other to form an alicyclic group. In General Formula (b-0), X0 represents an iodine atom, Rm represents a hydroxy group, nb1 represents an integer in a range of 1 to 5, nb2 represents an integer in a range of 0 to 4, 1≤nb1+nb2≤5, Yb0 represents a divalent linking group, Vb0 represents an alkylene group, R0 represents a fluorinated alkyl group having 1 to 5 carbon atoms, and Mm+ represents an m-valent organic cation
A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid. The resist composition contains a polymer containing a siloxane bond and an ionic group represented by General Formula (I0), which is decomposed upon exposure to generate an acid. In General Formula (I0), Mm+ represents a sulfonium cation or an iodonium cation, m represents an integer of 1 or more, and * represents a bonding site
A resist composition that generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid. The resist composition contains a polymer containing a siloxane bond and an ionic group represented by General Formula (I0), which is decomposed upon exposure to generate an acid. In General Formula (I0), Mm+ represents a sulfonium cation or an iodonium cation, m represents an integer of 1 or more, and * represents a bonding site
A resin component (A1) and a compound (B0) represented by General Formula (b0) in which X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, nb1 represents an integer of 1 to 5, and nb2 represents an integer of 0 to 4, 1≤nb1+nb2≤5 is satisfied, Yb0 represents a divalent linking group or a single bond, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a hydrogen atom, a fluorinated alkyl group having 1 to 5 carbon atoms, or a fluorine atom, and Rb1 to Rb15 each independently represents a hydrogen atom or a substituent, and at least two of Rb1 to Rb5 represent a fluorine atom or at least one of Rb1 to Rb5 represents a perfluoroalkyl group
A resin component (A1) and a compound (B0) represented by General Formula (b0) in which X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, nb1 represents an integer of 1 to 5, and nb2 represents an integer of 0 to 4, 1≤nb1+nb2≤5 is satisfied, Yb0 represents a divalent linking group or a single bond, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a hydrogen atom, a fluorinated alkyl group having 1 to 5 carbon atoms, or a fluorine atom, and Rb1 to Rb15 each independently represents a hydrogen atom or a substituent, and at least two of Rb1 to Rb5 represent a fluorine atom or at least one of Rb1 to Rb5 represents a perfluoroalkyl group
C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
C07C 303/22 - Preparation of esters or amides of sulfuric acidsPreparation of sulfonic acids or of their esters, halides, anhydrides or amides of sulfonic acids or halides thereof from sulfonic acids by reactions not involving the formation of sulfo or halosulfonyl groups
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
A substrate support that allows for effortless debonding of a circuit pattern, the substrate support including a base material having a bonding surface to which a semiconductor substrate (circuit pattern) is bonded; and an adhesive layer having a pattern of dots formed in at least a portion of the bonding surface.
A method for efficiently producing circuit patterns (semiconductor devices) that allows for effortless pickup of circuit patterns after dicing. The method includes producing a semiconductor substrate with circuit patterns formed on a first surface; forming a first laminate by bonding a first support through a first adhesive layer to the first surface; forming a second laminate by bonding a second support through a second adhesive layer having a dot pattern to a second surface opposite to the first surface; debonding the first support from the second laminate; and picking up the circuit patterns from the second support.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
An aqueous cleaning liquid containing hydrofluoric acid, at least one kind of triazole compound selected from the group consisting of triazole and a triazole derivative, and a nonionic surfactant.
An aqueous cleaning liquid containing hydrofluoric acid and an aliphatic sulfonic acid, where the aqueous cleaning liquid is used in a case of cleaning a substrate having cobalt in a surface layer.
There is provided an aqueous cleaning liquid containing hydrofluoric acid and a water-soluble aromatic compound, where the aqueous cleaning liquid has a pH of more than 5.
Provided are a composition for producing a porous film the composition enabling a decrease in a pore diameter of a produced porous film and improvement of a flow rate through the porous film, a method for producing a porous film, and a porous film. A composition for producing a porous film, the composition comprising at least one resin component (A) selected from a group consisting of polyamide acid, polyimide, a polyamide-imide precursor, polyamide-imide, and polyethersulfone, fine particles (B), and a solvent (S), the fine particles (B) comprising fine particles (B1) and fine particles (B2) having an average particle diameter larger than that of the fine particles (B1), the fine particles (B1) having an average particle diameter of smaller than 100 nm.
C08J 9/26 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
There is provided an aqueous cleaning liquid containing hydrofluoric acid and at least one kind of chelating compound selected from the group consisting of a β-diketone compound and a compound containing a total of two or more carboxy groups or hydroxyl groups in a molecule, where the aqueous cleaning liquid is used in a case of cleaning a substrate that contains aluminum oxide in a surface layer.
A resist composition including a resin component which has a constitutional unit (a01a) containing a polycyclic lactone-containing cyclic group and a constitutional unit (a02) represented by General Formula (a0-2), and a compound (B0) represented by General Formula (b0), Ra05 to Ra08 each independently represents a hydrogen atom, X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, 1≤nb1+nb2≤5 is satisfied, Yb0 represents a divalent linking group or a single bond, Vb0 represents a single bond, R0 represents a hydrogen atom, Mm+ represents an m-valent organic cation, m represents an integer of 1 or greater
A resist composition including a resin component which has a constitutional unit (a01a) containing a polycyclic lactone-containing cyclic group and a constitutional unit (a02) represented by General Formula (a0-2), and a compound (B0) represented by General Formula (b0), Ra05 to Ra08 each independently represents a hydrogen atom, X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, 1≤nb1+nb2≤5 is satisfied, Yb0 represents a divalent linking group or a single bond, Vb0 represents a single bond, R0 represents a hydrogen atom, Mm+ represents an m-valent organic cation, m represents an integer of 1 or greater
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
A resist composition including a resin component (A1) which has a constitutional unit (a0) containing a photodegradable base that is decomposed upon light exposure and loses acid diffusion controllability, and an acid generator component (B) which contains a compound (BO) represented by General Formula (b0) in which X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, an alkyl group, a fluorine atom, or a chlorine atom, nb1 represents an integer of 1 to 5, and nb2 represents an integer of 0 to 4, where 1≤nb1+nb2≤5 is satisfied, Yb0 represents a divalent linking group or a single bond, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a hydrogen atom, a fluorinated alkyl group having 1 to 5 carbon atoms, or a fluorine atom, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater
A resist composition including a resin component (A1) which has a constitutional unit (a0) containing a photodegradable base that is decomposed upon light exposure and loses acid diffusion controllability, and an acid generator component (B) which contains a compound (BO) represented by General Formula (b0) in which X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, an alkyl group, a fluorine atom, or a chlorine atom, nb1 represents an integer of 1 to 5, and nb2 represents an integer of 0 to 4, where 1≤nb1+nb2≤5 is satisfied, Yb0 represents a divalent linking group or a single bond, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a hydrogen atom, a fluorinated alkyl group having 1 to 5 carbon atoms, or a fluorine atom, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater
The present invention provides: a photocurable composition that, although including metal oxide microparticles at high concentration, is such that the metal oxide microparticles are satisfactorily dispersed and leakability to a to-be-coated substrate is satisfactory; a cured product of said photocurable composition; and a cured film formation method that uses the photocurable composition. A photocurable resin composition contains a photopolymerizable compound (A), metal oxide microparticles (B), an initiator (C), and a solvent (S). A compound having a radical-polymerizable-group-containing group or a cationically-polymerizable-group-containing group is used as the photopolymerizable compound (A). As the solvent (S), a plurality of solvents (S1) are used that have a specific structure that includes an oxyalkylene group, and are such that the Hildebrand solubility parameter value thereof is 21.0 MPa0.5 (alternatively, the solvent (S1) and another solvent (S2) are used at a prescribed mass ratio).
C09D 4/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond
Provided are: a compound used as a capping agent which imparts particles having excellent dispersibility and refractive index; particles coated with the compound; a method for producing the same; and a dispersion composition containing said particles. A compound according to the present invention has a structure represented by formula (1). In the formula, R1 represents an organic group having 1-30 carbon atoms, R2 represents a group represented by OR3 or a group represented by formula (2), R3 represents an organic group having 1-30 carbon atoms, n1 and n2 each represent an integer of at least 0, n1+2×n2 represents a valence determined by the type of L, L represents aluminum, gallium, yttrium, titanium, zirconium, hafnium, bismuth, tin, vanadium, or tantalum, * represents a bond, R4 and R5 each represent an organic group having 1-30 carbon atoms which may have an oxygen atom. Particles according to the present invention have a structure represented by formula (1) on a surface thereof.
A resist composition containing a base material component (A) and a compound (B0) represented by General Formula (b0), in which Rb0 represents a condensed cyclic group containing a condensed ring containing one or more aromatic rings, the condensed cyclic group has, as a substituent, an acid decomposable group that is decomposed under action of acid to form a polar group, Yb0 represents a divalent linking group or a single bond, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a fluorinated alkyl group having 1 to 5 carbon atoms or a fluorine atom, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or more
A resist composition containing a base material component (A) and a compound (B0) represented by General Formula (b0), in which Rb0 represents a condensed cyclic group containing a condensed ring containing one or more aromatic rings, the condensed cyclic group has, as a substituent, an acid decomposable group that is decomposed under action of acid to form a polar group, Yb0 represents a divalent linking group or a single bond, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a fluorinated alkyl group having 1 to 5 carbon atoms or a fluorine atom, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or more
A method for suppressing collapse of a three-dimensional structure which can hydrophobize a surface of a three-dimensional structure on a substrate, regardless of a material of the substrate and a material of the three-dimensional structure, and can suppress collapse of the three-dimensional structure on the substrate, as a result of hydrophobization, a surface treatment liquid, a method for producing the surface treatment liquid, and a substrate having a three-dimensional structure with silane condensate that is a component of the surface treatment liquid and is attached or bound to a surface of the three-dimensional structure. The method includes preparing a substrate having a three-dimensional structure on a surface thereof, and contacting a surface treatment liquid to a surface of the three-dimensional structure, a surface treatment liquid including a silane condensate that is a silane condensate formed by hydrolyzation condensation of a hydrolyzable silane compound including a trifunctional silane compound having a specific structure.
Provided are a composition and a photosensitive composition that contain inorganic fine particles dispersed stably over a long period of time and are less likely to undergo excessive loss of the mass of their components (or non-solvent components in a case where the composition or the photosensitive composition contains a solvent) even when heated; a product of curing of such a photosensitive composition; a compound suitable for use in such a photosensitive composition; and a method of producing such a compound. The composition includes a photopolymerizable compound (A) and inorganic fine particles (B) and the photosensitive composition includes a photopolymerizable compound (A), inorganic fine particles (B), and an initiating agent (C), in which the photopolymerizable compound (A) is a compound of a specific structure having a radically polymerizable group-containing group or a cationically polymerizable group-containing group.
CHEMICAL SOLUTION FOR REMOVING PRECIOUS METAL, METHOD FOR MANUFACTURING CHEMICAL SOLUTION, METHOD FOR TREATING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A chemical solution for removing a precious metal includes a cerium-containing oxidizing agent (A), an acid component (B) that is two or more acid components having different pKa's one another, provided that perchloric acid is excluded, and water.
Provided are a highly-curable photosensitive composition capable of forming cured products that are less likely to undergo excessive mass loss even when heated; and a product of curing of such a photosensitive composition. The photosensitive composition includes photopolymerizable compounds (A) and an initiating agent (C), in which the photopolymerizable compounds (A) include a combination of a compound of a specific structure having a radically polymerizable group-containing group or a cationically polymerizable group-containing group and a polyfunctional compound different from the compound of a specific structure.
An undercoat agent that is used for subjecting a layer including a block copolymer to phase separation on a substrate, the undercoat agent containing a resin component (A1) having a constitutional unit (u1) represented by General Formula (u1) and a constitutional unit (u2) represented by General Formula (u2). In General Formula (u1), R11 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, R12 represents a substituent, and n represents an integer of 0 to 5. In General Formula (u2), R2 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, L2 represents a single bond or a divalent linking group, and Y2 represents a divalent linking group having 5 to 15 carbon atoms
An undercoat agent that is used for subjecting a layer including a block copolymer to phase separation on a substrate, the undercoat agent containing a resin component (A1) having a constitutional unit (u1) represented by General Formula (u1) and a constitutional unit (u2) represented by General Formula (u2). In General Formula (u1), R11 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, R12 represents a substituent, and n represents an integer of 0 to 5. In General Formula (u2), R2 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, L2 represents a single bond or a divalent linking group, and Y2 represents a divalent linking group having 5 to 15 carbon atoms
C09D 153/00 - Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers
C09D 5/00 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects producedFilling pastes
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
CHEMICAL SOLUTION FOR REMOVING PRECIOUS METAL, METHOD FOR MANUFACTURING CHEMICAL SOLUTION, METHOD FOR TREATING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A chemical solution for removing a precious metal includes a cerium-containing oxidizing agent (A), an acid component (B) selected from the group consisting of carbonic acid, formic acid, propionic acid, butyric acid, and sulfonic acid, and salts thereof, and water.
C23F 1/30 - Acidic compositions for etching other metallic material
H01L 21/3213 - Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
87.
CHEMICAL SOLUTION FOR REMOVING PRECIOUS METAL, METHOD FOR MANUFACTURING CHEMICAL SOLUTION, METHOD FOR TREATING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A chemical solution for removing a precious metal includes a cerium-containing oxidizing agent (A), a metal component (B) including a transition metal other than cerium, and water, in which a content of the metal component (B) is less than 1.65×10−3 parts by mass with respect to 1 part by mass of the cerium-containing oxidizing agent (A) in terms of the transition metal.
A resin composition for forming a phase-separated structure contains a block copolymer that is formed of a first block, a second block, and a third block, which are bonded to one another. The structure of a constituent unit of a polymer constituting the first block is identical to the structure of a constituent unit of a polymer constituting the third block. The number-average molecular weight (Mn3) of the polymer constituting the third block is smaller than the number-average molecular weight (Mn1) of the polymer constituting the first block.
C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers
89.
METHOD OF PRODUCING BLOCK COPOLYMER, AND BLOCK COPOLYMER
A method of producing a triblock copolymer, the method including reacting a diblock copolymer that contains a first block formed from a repeating structure including a constituent unit containing an aromatic hydrocarbon group, and a second block formed from a repeating structure including a constituent unit derived from an α-substituted acrylic acid ester with a homopolymer that contains a third block formed from a repeating structure including a constituent unit containing an aromatic hydrocarbon group and containing a hydroxy group bonded to a terminal of a main chain in the third block to obtain a triblock copolymer, in which the reaction is transesterification of the constituent unit derived from an (α-substituted) acrylic acid ester at a terminal of a main chain of the diblock copolymer with the homopolymer.
C08F 299/00 - Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
A method for producing a polymer, including reacting a polymer (P1) having a structure represented by General Formula (t1-1) at a terminal of a main chain with a nucleophilic agent in which a pKa of a conjugate acid is 11 or less to obtain a polymer (P2) having a structure represented by Formula (t2-1) at a terminal of a main chain. In formula (t1-1), Z represents a monovalent organic group, and in both formulas, * represents a bonding site bonded to a carbon atom which constitutes a main chain of an adjacent constitutional unit
A method for producing a polymer, including reacting a polymer (P1) having a structure represented by General Formula (t1-1) at a terminal of a main chain with a nucleophilic agent in which a pKa of a conjugate acid is 11 or less to obtain a polymer (P2) having a structure represented by Formula (t2-1) at a terminal of a main chain. In formula (t1-1), Z represents a monovalent organic group, and in both formulas, * represents a bonding site bonded to a carbon atom which constitutes a main chain of an adjacent constitutional unit
A composition for selectively modifying a base material having a surface having two or more regions made of materials that are different from each other and contains a polymer and a solvent, in which the polymer has at least one structure represented by Formula (1-1) at a terminal of a main chain thereof. In the formula, X represents NR1, O, S, or Te; R1 represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms; A1 represents a monovalent substituent having substrate adsorbability at a terminal; and * represents a bonding site that is bonded to the main chain of the polymer
A composition for selectively modifying a base material having a surface having two or more regions made of materials that are different from each other and contains a polymer and a solvent, in which the polymer has at least one structure represented by Formula (1-1) at a terminal of a main chain thereof. In the formula, X represents NR1, O, S, or Te; R1 represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms; A1 represents a monovalent substituent having substrate adsorbability at a terminal; and * represents a bonding site that is bonded to the main chain of the polymer
*—X-A1 (1-1).
A photocurable composition containing metal oxide nanoparticles (X), a photopolymerizable compound (B), and a photoradical polymerization initiator (C), in which the content of the photoradical polymerization initiator (C) is 10 parts by mass or more with respect to 100 parts by mass of the total content of the metal oxide nanoparticles (X) and the photopolymerizable compound (B).
Provided is a composition having magnetostrictive properties, which contains a component (P): a compound having a polymerizable group, a component (M): a powdery magnetostrictive material, and a component (R): a radical polymerization initiator.
H01F 1/28 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder dispersed or suspended in a bonding agent
C08F 299/06 - Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polyurethanes
C08G 18/42 - Polycondensates having carboxylic or carbonic ester groups in the main chain
C08G 18/67 - Unsaturated compounds having active hydrogen
C08G 18/75 - Polyisocyanates or polyisothiocyanates cyclic cycloaliphatic
C08K 3/11 - Compounds containing metals of Groups 4 to 10 or of Groups 14 to 16 of the Periodic Table
96.
PHOTOCURABLE LIQUID COMPOSITION, CURED PRODUCT, AND METHOD FOR PRODUCING CURED PRODUCT
A photocurable liquid composition capable of forming a cured product in which localization of metal oxide nanoparticles is suppressed, a cured product of the photocurable liquid composition, and a method for producing a cured product using the photocurable liquid composition. As a nitrogen-containing compound, at least one of an amine compound having a specific structure and an imine compound having specific structure is added to the photocurable liquid composition including the photopolymerizable monomer, metal oxide nanoparticles, and a photopolymerization initiator.
This fluid circuit device includes a block that has a guide portion in which a pipe allowing a fluid sent from a pump to circulate therein is attachable and detachable. The guide portion includes at least one of a recessed portion that guides the pipe along a surface of the block, and a hole portion that guides the pipe through the inside of the block.
A resist composition including a silicon-containing resin and an acid generator component that generates acid upon exposure. The acid generator component includes an onium salt containing an anion moiety having an iodine atom and a cation moiety.
A metal residue removing liquid including a mixed solvent containing a first organic solvent and a second organic solvent, a salt of a base containing no metal ions and hydrofluoric acid, and water, in which the first organic solvent is diethylformamide, and the mixed solvent has a value of 0.6 or more, which is obtained by subtracting a hydrogen bond term of a Hansen solubility parameter from a polar term of the Hansen solubility parameter.
H05K 3/02 - Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
H05K 3/26 - Cleaning or polishing of the conductive pattern
100.
NEGATIVE PHOTOSENSITIVE COMPOSITION AND METHOD FOR PRODUCING HOLLOW STRUCTURE
A negative photosensitive composition for forming a top plate portion of a hollow structure which contains an epoxy group-containing compound, a cationic polymerization initiator, a polyfunctional (meth)acrylate compound, and a photoradical polymerization initiator.
patents
