A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed by an action of the acid. The resist composition includes a resin component whose solubility in a developing solution is changed by the action of the acid, and an acid generator component which generates an acid upon light exposure, in which the acid generator component contains a compound represented by Formula (b0). In General Formula (b0), Ar represents an aromatic ring, Rf0 represents a fluorinated alkyl group or a fluorine atom, L0 represents a divalent linking group, Yb0 represents a cyclic group, Rb0 represents an organic group, n01 represents an integer of 1 or greater, n02 represents an integer of 0 or greater, Mm+ represents an m-valent cation, and when L0-Yb0 is —C(═O)—O—Yb0, Yb01 represents an alicyclic group
A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed by an action of the acid. The resist composition includes a resin component whose solubility in a developing solution is changed by the action of the acid, and an acid generator component which generates an acid upon light exposure, in which the acid generator component contains a compound represented by Formula (b0). In General Formula (b0), Ar represents an aromatic ring, Rf0 represents a fluorinated alkyl group or a fluorine atom, L0 represents a divalent linking group, Yb0 represents a cyclic group, Rb0 represents an organic group, n01 represents an integer of 1 or greater, n02 represents an integer of 0 or greater, Mm+ represents an m-valent cation, and when L0-Yb0 is —C(═O)—O—Yb0, Yb01 represents an alicyclic group
Provided are a processing liquid for semiconductor devices, a method for processing a substrate, and a method for manufacturing a semiconductor device, the processing liquid including a quaternary ammonium hydroxide compound, a cyclic ether compound, and an alkyl ketone, wherein the total of the the cyclic ether compound content and the alkyl ketone content is 0.001 ppm or more and less than 5 ppm.
Provided are: a semiconductor device processing liquid which comprises a quaternary ammonium hydroxide compound and at least one nonionic surfactant selected from the group consisting of surfactants having a specific structure and surfactants having a specific structure, and in which the contained amount of the nonionic surfactant is 0.001-40 ppm; a substrate processing method: and a semiconductor device manufacturing method.
The present invention employs a resist composition containing a resin component which exhibits changed solubility in a developing solution under the action of an acid. The resin component contains a polymer in which a linking group represented by general formula (a0-L) constitutes a portion of the main chain of the polymer. In formula (a0-L), R10represents a hydrocarbon group in which a linking group is divided into two groups by the action of an acid. R20and R30 are each independently a C1-5 alkylene group. *1 and *2 each represent a dangling bond that bonds to the main chain of the polymer. O is an oxygen atom. S is a sulfur atom. Using this resist composition in the formation of a resist pattern, high sensitivity can be achieved, lithography characteristics such as roughness reduction can be enhanced, and film loss can be further suppressed.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C08F 2/38 - Polymerisation using regulators, e.g. chain terminating agents
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
C08F 220/26 - Esters containing oxygen in addition to the carboxy oxygen
C08G 81/02 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
An etchant composition offers an etch rate on silicon which is sensitive to a dopant type of the silicon. The etchant composition comprises a water-soluble etchant, one or more water-miscible organic solvents, and one or more surfactants.
A method to reduce an etch rate of n-type silicon relative to an etch rate of a collateral material, prior to an oxidative, wet-etch process, comprises exposing a surface including n-type silicon and the collateral material to an aqueous rinse of a pre-determined temperature for a pre-determined period of time.
A composition capable of forming a guide pattern superior in heat resistance, a reactive film, an underlayer film, a method for producing a structure including a phase-separated structure, and a polymer. The composition includes a polymer including a constitutional unit including a structure in which the hydrogen atom of a carboxy group or a hydroxy group is substituted by an acid-dissociating group; and a constitutional unit derived from styrene and/or a styrene derivative, in which the acid-dissociating group is not a tertiary carbon atom-containing aliphatic group, or an acetal protective group.
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
8.
RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND
Disclosed is a resist composition that generates an acid upon exposure to light, and of which the solubility in a developer solution is changed by the action of the acid, the resist composition comprising a resin component (A1) of which the solubility in a developer solution is changed by the action of the acid, and the resin component (A1) having a constituent unit (a0) derived from a compound represented by general formula (a0). In the formula, W0represents a polymerizable group-containing group; X0represents a hydrogen atom or an alkyl group; Ar01represents an arylene group that may have a substituent; L01represents a single bond or a divalent linking group; Rpg0 represents an acid-dissociable group; and n0 represents an integer of 2 or greater as long as permitted by the valence.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07C 233/55 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring having the carbon atom of the carboxamide group bound to a carbon atom of an unsaturated carbon skeleton
Provided is a resist composition with which it is possible to increase both resolution and exposure latitude while maintaining good sensitivity in resist pattern formation. The present invention employs a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The resist composition contains a resin component (A1), and the resin component (A1) includes a constituent unit (a0) derived from a compound represented by general formula (a0-1). In the formula: W0represents a polymerizable group; X0represents a hydrogen atom or an alkyl group; Ar01represents an arylene group which may have a substituent; La01represents a single bond or a divalent linking group; R01represents a hydrocarbon group which may have a substituent; Rpg0 represents an acid dissociable group; and n0 represents an integer of 1 or more as long as the valence permits.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07C 233/55 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring having the carbon atom of the carboxamide group bound to a carbon atom of an unsaturated carbon skeleton
This resist composition generates an acid when being exposed to light and undergoes a change in solubility with respect to a developing solution due to an action of the acid. The resist composition contains a resin component (A1) that undergoes a change in solubility with respect to a developing solution due to an action of an acid. The resin component (A1) includes a structural unit (a0) derived from a compound represented by general formula (a0). In the formula: W0represents a polymerizable group-containing group; X0represents a hydrogen atom or an alkyl group; Ar01represents an arylene group excluding a hydroxy group and an alkoxy group and optionally having a substituent; La01represents a single bond or a divalent linkage group; Rpg0 represents an acid-dissociable group; and n0 represents an integer of 1 or more as long as the valence thereof is acceptable.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07C 233/55 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring having the carbon atom of the carboxamide group bound to a carbon atom of an unsaturated carbon skeleton
A method for manufacturing a processed substrate having a surface in which at least a part of a region is modified includes a step of exposing a surface of a substrate to a surface modifier containing a compound having a bonding property to the substrate, and a step of cleaning the substrate after the exposure with a cleaning liquid and performing film formation while controlling the compound in a plane direction and a height direction of the substrate to obtain a processed substrate. The cleaning liquid in which a distance Ra between a Hansen solubility parameter of the compound and a Hansen solubility parameter of the cleaning liquid satisfies a relationship of (Ra)2≤128 is selected and used.
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
12.
RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND ACID DIFFUSION CONTROL AGENT
A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed by an action of the acid, the resist composition including a resin component whose solubility in a developing solution is changed by the action of the acid, and a compound represented by General Formula (d0) in which Rd01 represents a monovalent organic group, Rd02 represents a monovalent organic group or a hydrogen atom, and Ld01 represents a single bond or a divalent linking group
A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed by an action of the acid, the resist composition including a resin component whose solubility in a developing solution is changed by the action of the acid, and a compound represented by General Formula (d0) in which Rd01 represents a monovalent organic group, Rd02 represents a monovalent organic group or a hydrogen atom, and Ld01 represents a single bond or a divalent linking group
Provided are an etching composition containing (A) an oxidizing agent; (B) a compound capable of releasing fluoride ions or a salt thereof; (C) at least one amine compound selected from the group consisting of an amine compound (c1) having a specific structure, an amine compound (c2) having a specific structure, an amine compound (c3) having a specific structure, piperazine, 1,5,9-triazacyclododecane, 1,4,7-triazacyclononane, cyclen, cyclam, tetraethylenepentamine, and polyethyleneimine, and derivatives thereof, and (D) a corrosion inhibitor, an etching method, and a method for manufacturing a semiconductor substrate.
A cleaning liquid for cleaning a substrate having a metal exposed on a surface, including a basic compound, an amino acid, and water, in which an isoelectric point (pI) of the amino acid and a pH of the cleaning liquid at 23° C. satisfy a condition of Expression (1). The cleaning liquid contains no nitrogen heterocyclic compound, and a concentration of the basic compound is less than 12% by mass with respect to a total mass of the cleaning liquid
A cleaning liquid for cleaning a substrate having a metal exposed on a surface, including a basic compound, an amino acid, and water, in which an isoelectric point (pI) of the amino acid and a pH of the cleaning liquid at 23° C. satisfy a condition of Expression (1). The cleaning liquid contains no nitrogen heterocyclic compound, and a concentration of the basic compound is less than 12% by mass with respect to a total mass of the cleaning liquid
pI
-
2
<
pH
<
pI
+
2.
(
1
)
A composition exhibiting favorable base material selectivity, and which can form a polymer brush having favorable brush density and heat resistance, as well as a polymer. The composition is used in selective modification of a base material having a surface including two or more regions made of different materials. The composition contains a polymer and a solvent, in which the polymer has a constitutional unit derived from styrene and/or a constitutional unit derived from a styrene derivative, and the polymer has a group represented by Formula (1) below at a terminal of the main chain
A composition exhibiting favorable base material selectivity, and which can form a polymer brush having favorable brush density and heat resistance, as well as a polymer. The composition is used in selective modification of a base material having a surface including two or more regions made of different materials. The composition contains a polymer and a solvent, in which the polymer has a constitutional unit derived from styrene and/or a constitutional unit derived from a styrene derivative, and the polymer has a group represented by Formula (1) below at a terminal of the main chain
Provided are an etching composition containing (A) an oxidizing agent; (B) a compound capable of releasing fluoride ions or a salt thereof; and (C) a nonionic surfactant containing at least one selected from the group consisting of a compound (c1) having a specific structure and a compound (c2) having a specific structure, an etching method, and a method for manufacturing a semiconductor substrate.
The present invention adopts a resist composition which generates acid when exposed to light and the solubility of which in a developing solution is changed by the action of the acid. The resist composition contains a compound containing a cation represented by general formula (c0). In the formula, R01and R02each independently represent an aryl group that may have a substituent, an alkyl group that may have a substituent, or an alkenyl group that may have a substituent. R01and R02may be bonded to each other to form a ring together with a sulfur atom in the formula. R03 represents a substituent. k is an integer from 0 to 3. According to this resist composition, higher sensitivity can be achieved, lithography characteristics such as roughness reduction can be enhanced, and the occurrence of defects can be suppressed.
A resist composition in which sensitivity and reduction of roughness are further improved and film thickness reduction during development is suppressed, a resist pattern formation method using the resist composition, and a compound useful as an acid diffusion control agent used in the resist composition. The resist composition contains a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (d0) in which Z represents a polycyclic ring group including a benzene ring; Rd01 represents a substituent; j represents an integer of 0 or greater as long as the valence is allowed; Xd01 represents an iodine atom or a bromine atom; k represents an integer of 1 or greater as long as the valence is allowed; m represents an integer of 1 or greater; and Mm+ represents an m-valent organic cation
A resist composition in which sensitivity and reduction of roughness are further improved and film thickness reduction during development is suppressed, a resist pattern formation method using the resist composition, and a compound useful as an acid diffusion control agent used in the resist composition. The resist composition contains a base material component whose solubility in a developing solution is changed by action of an acid, and a compound represented by General Formula (d0) in which Z represents a polycyclic ring group including a benzene ring; Rd01 represents a substituent; j represents an integer of 0 or greater as long as the valence is allowed; Xd01 represents an iodine atom or a bromine atom; k represents an integer of 1 or greater as long as the valence is allowed; m represents an integer of 1 or greater; and Mm+ represents an m-valent organic cation
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 63/00 - Apparatus in general for separation processes using semi-permeable membranes
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
This resist composition generates an acid upon being exposed to light and changes in solubility with respect to a developer due to the action of the acid. The resist composition contains a compound including a cation (C0) represented by general formula (c0). In the formula, R1is a hydrocarbon group that may have a substituent, X is a halogen atom, R2is a hydrocarbon group that may have a substituent, each of Ar1and Ar2 independently is an aryl group that may have a substituent, and n is an integer of 0-3.
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
This method for manufacturing a transfer substrate comprises a step for providing a substrate equipped with a resist pattern and an underlayer film, a step for electrostatically adsorbing the substrate onto a chuck by using plasma of a noble gas, and a step for etching the substrate electrostatically adsorbed onto the chuck by using plasma of a halogen compound, wherein: a resist composition constituting the resist pattern contains a resin component (A1) of which the solubility in a developing solution changes due to the action of an acid; the molecular weight ratio (PM) occupied by protective groups with respect to the total of values obtained by multiplying the molecular weights of monomers from which constituent units constituting the resin component (A1) are derived by the molar ratios of the constituent units is 32% or lower; and the total (RCt) of values obtained by multiplying a cyclic structure contribution ratio (RC) in the constituent units constituting the resin component (A1) by the molar ratios of the constituent units is 0.6 or greater.
1111 is an aromatic hydrocarbon group having at least one halogen atom. q is an integer of 1 or more. m is an integer of 1 or more, and Mm+ is an m-valent organic cation.
C07D 333/16 - Radicals substituted by singly bound hetero atoms other than halogen by oxygen atoms
C07D 333/24 - Radicals substituted by carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
The present invention relates to a resist composition containing: a base component (A) that exhibits changed solubility in a developing solution under the action of an acid; an acid generator component (B) that generates an acid upon exposure; and a fluorine additive component (F), wherein the fluorine additive component (F) contains a polymer compound (F1) having a constituent unit (f1) represented by general formula (f1-1) in the description, and neither a compound having a perfluoroalkyl skeleton nor a compound having a difluoromethyl group is contained in the resist composition.
22-containing cyclic group, or a carbonate-containing cyclic group; and the resist composition contains neither a compound having a perfluoroalkyl skeleton nor a compound having a difluoromethyl group.
The present invention provides a resist composition, a resist pattern formation method, a polymer compound, and a fluorine additive component with which it is possible to reduce environmental load and to suppress both WMD, which is required in TC-Less processes, and blob defects. The present invention relates to a resist composition that generates an acid upon exposure to light and exhibits changed solubility in a developing solution under the action of an acid, the resist composition containing a base component (A) that exhibits changed solubility in a developing solution under the action of an acid, an acid generator component (B) that generates an acid upon exposure to light, and a fluorine additive component (F), the fluorine additive component (F) containing a polymer compound (F1) that has a constituent unit (f1) represented by general formula (f1-1) set forth in the description and a constituent unit (fa1) represented by general formula (fa-1) set forth in the description, and being free of compounds having a perfluoroalkyl skeleton and compounds having a difluoromethyl group.
A resin composition for forming a phase-separated structure capable of forming a coating film with a uniform thickness and forming a thick film having a well phase-separated structure while suppressing the generation of defects in the film, and a method for producing a structure including a phase-separated structure using the resin composition. The resin composition includes a block copolymer and an organic solvent including propylene glycol monomethyl ether acetate and a solvent having an ester group and a boiling point at atmospheric pressure of 225° C. or more and 275° C. or less.
C09D 153/00 - Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The present invention provides a resist composition, a resist pattern forming method, a compound, a polymer compound, and a fluorine additive component that reduce environmental load and have excellent lithography properties. The present invention relates a resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution under the action of an acid. The resist composition contains: a base component (A) which exhibits changed solubility in a developing solution under the action of an acid; an acid generator component (B) which generates an acid upon exposure; and a fluorine additive component (F). The fluorine additive component (F) contains a polymer compound (F1) having a structural unit (f1) represented by general formula (f1-1) described in the specification. The polymer compound (F1) does not contain any compound having a perfluoroalkyl skeleton or a difluoromethyl group.
This resist composition contains an alkali-soluble resin (A), an acid generator (B), and a crosslinking agent (C). The acid generator (B) contains a compound (B0) represented by general formula (b0). In the formula, X0represents a nitrogen atom or CRX0. Y0represents a nitrogen atom or CRY0. Z0represents a nitrogen atom or CRZ0. C represents a carbon atom. RX0, RY0, RZ0, and R0each independently represent a hydrogen atom or a substituent. Two or more of RX0, RY0, RZ0, and R0may be bonded to each other to form a ring structure. m is an integer of 1 or greater, and Mm+ represents an m-valent cation.
C07D 491/153 - Ortho-condensed systems the condensed system containing two rings with oxygen as ring hetero atom and one ring with nitrogen as ring hetero atom
The present invention provides a heteropolyacid salt having a modified lacunary site and a mixture thereof. The heteropolyacid salt having a modified lacunary site and the mixture are each characterized in that: a cation moiety of the heteropolyacid salt having the modified lacunary site includes an organic sulfonium cation; and the organic sulfonium cation has one or more iodine atoms and a polar group which has one or more acid-dissociable groups.
A cleaning liquid for cleaning a substrate having a metal exposed on a surface, the cleaning liquid including an alkanol hydroxylamine, a chelating agent, and water, in which the cleaning liquid has a pH of less than 10 at 23° C.
Provided is a deep ultraviolet LED having an improved light extraction efficiency (LEE). The deep ultraviolet LED with an emission wavelength λ includes, in order from an opposite side of a substrate: a p-type electrode layer made of indium tin oxide (ITO); a p-GaN contact layer; a p-AlGaN layer transparent to the wavelength λ; an electron barrier layer transparent to the wavelength λ; a multi-quantum well layer transparent to the wavelength λ; and a n-AlGaN layer transparent to the wavelength λ. The deep ultraviolet LED includes a photonic crystal periodic structure having a plurality of pillars within a range in a thickness direction from an upper portion of the p-type electrode layer to an inside of the n-AlGaN layer, in a direction of the substrate. The photonic crystal periodic structure has a photonic band gap that is open to a TM polarized component. A period a of the photonic crystal periodic structure satisfies a Bragg condition (m×λ/neff=2a, m: order, neff: effective refractive index of the photonic crystal periodic structure) with respect to a light with the wavelength λ, the order m satisfies 3≤m≤7, and a radius R of the pillar satisfies 0.25≤R/a≤0.35.
H10H 20/812 - Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
H10H 20/813 - Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
H10H 20/814 - Bodies having reflecting means, e.g. semiconductor Bragg reflectors
H10H 20/825 - Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
32.
HETEROPOLYACID SALT WITH MODIFIED DEFECT SITE OR MIXTURE THEREOF, RESIST MATERIAL, AND PATTERN FORMATION METHOD
The present invention provides a heteropolyacid salt with a modified defect site or a mixture thereof, the heteropolyacid salt with a modified defect site or a mixture thereof characterized in that a cation part of the heteropolyacid salt with a modified defect site includes an organic sulfonium cation, and the organic sulfonium cation has one or more electron-withdrawing groups and a polar group having one or more acid-dissociable groups.
Provided are a method for processing a semiconductor substrate, a method for manufacturing a semiconductor device, and a processing solution for a semiconductor device usable therefor, in which: a processing step of processing a semiconductor substrate including a layer containing a metal nitride with a processing solution for a semiconductor device is included; the processing solution for a semiconductor device contains NH3, a corrosion inhibitor, and water; the corrosion inhibitor is at least one selected from the group consisting of 5-methyl-1H-benzotriazole, imidazole, and 5-amino-1H-tetrazole; and a mass ratio of a content of NH3 to a content of the corrosion inhibitor (NH3/corrosion inhibitor) is 5 to 60.
The present invention addresses the problem of providing a cell culture chip in which unevenness of flow velocity distribution in a flow channel width direction is reduced in a curved flow channel in order to prevent bubble entrapment in the cell culture chip and to uniformly seed cells. A cell culture chip (1) according to an embodiment of the present invention includes a laminate (100, 200) having a flow channel structure therein, wherein: the laminate (100, 200) includes a flow channel substrate (L2, L4) in which a flow channel (F2, F4) leading to a port (P1, P2, P3, P4) is formed; the flow channel (P1, P2, P3, P4) includes a curved flow channel (FC) formed in a curved shape in plan view of the flow channel substrate (L2, L4) and having a cross-sectional area that gradually changes in the flow direction of a fluid, and a first connection flow channel (FJ1) connecting the port and the curved flow channel (FC) and having a constant cross-sectional area in the flow direction of the fluid; the cross-sectional area of the first connection flow channel (FJ1) is smaller than the minimum value of each of the cross-sectional area of the port (P1, P2, P3, P4) and the cross-sectional area of the curved flow channel (FC); and in plan view, the flow channel width of the curved flow channel (FC) gradually changes in the flow direction of the fluid.
The present invention provides a resist material that contains at least two different polyacid salts (A1) and (A2) as (A) a polyacid salt. The resist material is characterized in that at least one of the polyacid salts (A1) and (A2) includes at least one polar group that has an acid-dissociable group.
This negative photosensitive film comprises a tri- or higher-functional epoxy resin, a photoacid generator, and an adhesion enhancer having a functional group which is hydrolyzed to form a hydroxy group, and is characterized by having a moisture content of 0.1-1 mass%. A dry film (100) comprises a substrate film (110) and, laminated thereto in the following order, the negative photosensitive film (120) according to the present invention and a cover film (150). A multilayer film (130) comprises a substrate film (110) and, laminated thereto, the negative photosensitive film (120) according to the present invention. The present invention can provide: the negative photosensitive film (120) which has enhanced adhesion to substrates and is less apt to form inclusions therein; the multilayer film (130) and the dry film (100) in which the negative photosensitive film (120) has been laminated; and a negative photosensitive composition.
Provided is a resist composition which generates an acid through exposure to light and of which solubility in a developing solution changes due to the action of the acid, the resist composition containing a resin component (A1) of which solubility in the developing solution changes due to the action of the acid, and the resin component (A1) including a copolymer represented by general formula (A1-0) (wherein, Rc represents a linking group with a valence of ns, ns represents an integer of 3 or greater, L represents a divalent linking group, and P is a copolymerization segment having a structural unit that includes an acid-decomposable group whose polarity increases due to the action of an acid, a structural unit that is a proton source, and a structural unit that generates an acid through exposure to light).
A resin composition including a block copolymer having a first block, a second block, and a third block, in which the third block is located between the first block and the second block The first block includes a polymer having a repeating structure of a structural unit represented by the following formula (b1), the second block including a polymer having a repeating structure of structural unit represented by the following formula (b2), the third block includes a polymer having a repeating structure of structural unit derived from a high Log P monomer, and the high Log P monomer has a higher Log P value than methyl methacrylate
A resin composition including a block copolymer having a first block, a second block, and a third block, in which the third block is located between the first block and the second block The first block includes a polymer having a repeating structure of a structural unit represented by the following formula (b1), the second block including a polymer having a repeating structure of structural unit represented by the following formula (b2), the third block includes a polymer having a repeating structure of structural unit derived from a high Log P monomer, and the high Log P monomer has a higher Log P value than methyl methacrylate
C08F 287/00 - Macromolecular compounds obtained by polymerising monomers on to block polymers
C08F 2/48 - Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
39.
PROTECTIVE FILM FORMING AGENT FOR SILICON-BASED SUBSTRATE, METHOD FOR PROCESSING SILICON-BASED SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Provided are a protective film forming agent for a silicon-based substrate, the protective film forming agent containing a silylating agent and a solvent having a Hildebrand SP value of 17.5 or less, a method for processing a silicon-based substrate using the same, and a method for manufacturing a semiconductor device using the same.
Disclosed is a resist composition which contains a resin component (A1) that has a constituent unit (a0) derived from a compound represented by general formula (a0-1). (In the formula, W0represents a polymerizable group-containing group; L01represents a divalent linking group or a single bond; Rdg represents an acid dissociable group represented by general formula (Rdg-1); Xr, Xs, and Xt each independently represent a carbon atom; H represents a hydrogen atom; X0represents an alicyclic hydrocarbon ring which may have a substituent; Ar0represents an aromatic ring; Rf0 represents a fluorine atom or a trifluoromethyl group; m represents an integer of 1 or more, valence permitting; and * represents an atomic bond that is bonded to a carbonyloxy group -C(=O)-O- in general formula (a0-1).)
C07C 69/76 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring
C07C 69/88 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified carboxyl groups
C07C 69/92 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with etherified hydroxyl groups
In a well array filter (1), a plurality of wells (3) are formed in a filter body (2), the wells (3) adjacent to each other are separated by a well partition wall (6), two or more through-holes (8) are formed in a well bottom portion (4), the minimum width of the opening of the through-hole (8) is 1 μm or more and 3.5 μm or less, and the ratio of a total opening area of the through-hole is 0.5% or more and 3.5% or less. Assuming a minimum circumscribed circle (G1) that surrounds all of the through-holes (8) in each well bottom portion (4), when the center is moved to the center of each of the plurality of through-holes (8), all minimum circumscribed circles (G2) after movement at least partially overlap all of the plurality of through-holes (8).
B01D 29/05 - Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups Filtering elements therefor with flat filtering elements supported
An etchant composition offers an etch rate on silicon which is sensitive to a dopant type of the silicon. The etchant composition comprises a base and an additive distinct from the base. The additive has between one and six carbon atoms per molecule.
The present invention employs a photosensitive adhesive composition that contains an acrylic resin, an epoxy group-containing compound (excluding those corresponding to acrylic resins), and a photocationic polymerization initiator. The acrylic resin has a constituent unit that is derived from an acrylic monomer including a functional group which reacts with a carboxy group (-COOH), and has a glass transition temperature of not higher than 0°C and a weight average molecular weight of not less than 200,000. The photosensitive adhesive composition makes it possible to bond a transparent substrate and another substrate, makes whitening of the transparent substrate less likely to occur during bonding, and provides good resolution in pattern formation.
C09J 133/00 - Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereofAdhesives based on derivatives of such polymers
The purpose of the present invention is to provide a novel resist material and a pattern forming method. The resist material comprises (A) a polymer and (B) a metal compound, wherein the component (A) comprises a structural unit containing a fluorine atom, the structural unit having a monovalent or divalent aromatic hydrocarbon cyclic group in which at least two hydrogen atoms on the aromatic hydrocarbon cyclic group are substituted with fluorine atoms.
The present invention provides a resist material comprising (A) a heteropolyacid salt having a modified defect site or a mixture thereof, and (B) an acid diffusion control agent, wherein the acid diffusion control agent (B) is (B1) a photodegradable base having an iodine atom.
A resist composition which generates an acid upon exposure and whose solubility with respect to a liquid developer changes by an action of the acid, the resist composition including a base material component whose solubility with respect to a liquid developer changes by an action of the acid, an acid generating agent component which generates an acid upon exposure, a first acid diffusion control component; and a second acid diffusion control component, in which the first acid diffusion control component (D1) includes a compound (d1-1), and the second acid diffusion control component (D2) includes a compound (d2-1).
[Problem] To prevent formation of residues of a second adhesive on a semiconductor wafer during debonding by ensuring a low adhesion between a second support and the semiconductor wafer to prevent the two from adhering together too firmly while preventing bonding failure of a first support, even when the second support is bonded to a second surface of the semiconductor wafer.
[Problem] To prevent formation of residues of a second adhesive on a semiconductor wafer during debonding by ensuring a low adhesion between a second support and the semiconductor wafer to prevent the two from adhering together too firmly while preventing bonding failure of a first support, even when the second support is bonded to a second surface of the semiconductor wafer.
[Means to Solve Problem] A substrate bonding device 1 includes: a bonder 10 that bonds a second support 110 to a second surface Sb, which is on an opposite side to a first surface Sa of a semiconductor wafer W, via a second adhesive 60, with the first surface Sa having a first support 100 bonded thereto at a first temperature via a first adhesive 50; and a heater 20 that heats one or both of the second support 110 and the semiconductor wafer W at a second temperature that is lower than the first temperature.
A resist composition in which a polymer compound having a constitutional unit derived from a compound represented by General Formula (a0-m) is used as a base resin. In the formula, W represents a polymerizable group-containing group; RAr1 and RAr2 represent an aromatic group; R01 and R02 represent an iodinated alkyl group, an iodine atom, or a hydrogen atom; L11 to L15 represent a linking group; q represents 0 or 1; when q represents 0, R02 represents an iodinated alkyl group or an iodine atom, and j2 represents an integer of 1 to 5; when q represents 1, the number of iodine atoms in R01 and R02 is 1 or more; and k1 and k2 represent 0 or 1; when q represents 0, k2 represents 1; when q represents 1, k1+k2 is 1; and Mm+ represents an m-valent onium cation.
A resist composition in which a polymer compound having a constitutional unit derived from a compound represented by General Formula (a0-m) is used as a base resin. In the formula, W represents a polymerizable group-containing group; RAr1 and RAr2 represent an aromatic group; R01 and R02 represent an iodinated alkyl group, an iodine atom, or a hydrogen atom; L11 to L15 represent a linking group; q represents 0 or 1; when q represents 0, R02 represents an iodinated alkyl group or an iodine atom, and j2 represents an integer of 1 to 5; when q represents 1, the number of iodine atoms in R01 and R02 is 1 or more; and k1 and k2 represent 0 or 1; when q represents 0, k2 represents 1; when q represents 1, k1+k2 is 1; and Mm+ represents an m-valent onium cation.
C07C 69/88 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified carboxyl groups
To provide an optical product including an anti-fog coating film having excellent anti-fog durability. An optical product including a transparent material and an anti-fog coating film disposed on a surface of the transparent material, in which the anti-fog coating film is obtained by drying and/or curing a coating film formed from an anti-fog coating composition, the anti-fog coating composition contains a polymer (A), a substrate component (B), and a surfactant (C), the polymer (A) includes a constituent unit derived from a compound (a) having an ethylenically unsaturated group and an ionic group, a constituent unit derived from a compound (b) having an ethylenically unsaturated group and an —OH group and/or an —NH2 group, and a constituent unit derived from a compound (c) represented by the following formula (c-1), and has a structure derived from a compound (d) having a thiol group and a hydrocarbon group having 4 or more carbon atoms at least at one terminal of a main chain.
To provide an optical product including an anti-fog coating film having excellent anti-fog durability. An optical product including a transparent material and an anti-fog coating film disposed on a surface of the transparent material, in which the anti-fog coating film is obtained by drying and/or curing a coating film formed from an anti-fog coating composition, the anti-fog coating composition contains a polymer (A), a substrate component (B), and a surfactant (C), the polymer (A) includes a constituent unit derived from a compound (a) having an ethylenically unsaturated group and an ionic group, a constituent unit derived from a compound (b) having an ethylenically unsaturated group and an —OH group and/or an —NH2 group, and a constituent unit derived from a compound (c) represented by the following formula (c-1), and has a structure derived from a compound (d) having a thiol group and a hydrocarbon group having 4 or more carbon atoms at least at one terminal of a main chain.
C09D 4/06 - Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups
A resist composition containing a resin component whose solubility in a development solution changes under the action of the acid and a compound represented by General Formula (d0). In the formula, Ar is an aromatic ring; Xd is an iodine atom, a fluorine atom, a bromine atom or a fluorinated alkyl group; Rd is a substituent; nd is an integer of 1 or more as long as the valence allows, and md is an integer of 0 or more as long as the valence allows; Ld is a single bond or a divalent linking group; m is an integer of 1 or more, and Mm+ is an m-valent cation
A resist composition containing a resin component whose solubility in a development solution changes under the action of the acid and a compound represented by General Formula (d0). In the formula, Ar is an aromatic ring; Xd is an iodine atom, a fluorine atom, a bromine atom or a fluorinated alkyl group; Rd is a substituent; nd is an integer of 1 or more as long as the valence allows, and md is an integer of 0 or more as long as the valence allows; Ld is a single bond or a divalent linking group; m is an integer of 1 or more, and Mm+ is an m-valent cation
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
51.
RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND AND ACID DIFFUSION CONTROL AGENT
A resist composition including a base material component whose solubility in a developing solution is changed by an action of an acid and a compound represented by General Formula (d0). In Formula (d0), Rf represents a fluorinated hydrocarbon group; V0 represents a hydrocarbon group which may have a substituent or a single bond; Y0 represents a divalent linking group having an oxygen atom; I represents an iodine atom; x represents an integer of 1 to 4, y represents an integer of 1 to 4; 2≤x+y≤5 is satisfied; a total number of fluorine atoms contained in x pieces of Rf's is 5 or more; Mm+ represents a sulfonium cation or an iodonium cation; and m represents an integer of 1 or greater.
A resist composition including a base material component whose solubility in a developing solution is changed by an action of an acid and a compound represented by General Formula (d0). In Formula (d0), Rf represents a fluorinated hydrocarbon group; V0 represents a hydrocarbon group which may have a substituent or a single bond; Y0 represents a divalent linking group having an oxygen atom; I represents an iodine atom; x represents an integer of 1 to 4, y represents an integer of 1 to 4; 2≤x+y≤5 is satisfied; a total number of fluorine atoms contained in x pieces of Rf's is 5 or more; Mm+ represents a sulfonium cation or an iodonium cation; and m represents an integer of 1 or greater.
C07C 65/21 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups
C07C 65/24 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic
C07C 69/76 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring
C07C 233/81 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups
Provided are a porous polyimide film that has small pore size and excellent fluid permeability, a production method therefor, and a varnish for porous polyimide film formation that is preferably used in said production of the porous polyimide film. The average pore size of the porous polyimide film as measured by a half-dry method is 30 nm or less. A polyimide resin constituting the porous polyimide film is formed by heating a polyamide acid (A). The tensile modulus of elasticity of a film of the polyamide resin as measured by a specific method is 2.0-5.0 GPa.
C08J 9/26 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
B01D 71/40 - Polymers of unsaturated acids or derivatives thereof, e.g. salts, amides, imides, nitriles, anhydrides, esters
C08G 69/26 - Polyamides derived from amino carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
53.
RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER COMPOUND, AND COMPOUND
A resist composition according to the present invention contains a resin component (A1) having a constituent unit (a0) derived from a compound represented by general formula (a0-1) (where W 1is a polymerizable group-containing group. Ar1 is an aromatic group. Ra01is an alkoxy group or an acid-decomposable group. Ra02is a substituent. Lf01is a divalent linking group. Lf02is an alkylene group which may have a substituent or an arylene group which may have a substituent. m is an integer of 1 or greater, and Mm+ represents an m-valent cation).
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
The present invention employs a resist composition which generates an acid upon exposure to light, and of which the solubility in a developer solution is changed by the action of an acid. This resist composition contains a resin component of which the solubility in a developer solution is changed by the action of an acid, and the resin component has a constituent unit that is derived from a compound represented by general formula (a0-m). In general formula (a0-m), W0represents a polymerizable group-containing group. RArrepresents an aromatic ring. I represents an iodine atom, and Rd0represents a substituent other than an iodine atom. k represents an integer of 1 or more. j represents an integer of 0 or more. Yd0represents a divalent linking group or a single bond. m represents an integer of 1 or more, and Mm+ represents an organic cation having a valence of m. According to this resist composition, high sensitivity is achieved and lithography characteristics such as roughness reduction are enhanced in the formation of a resist pattern.
A resist composition including a base material component and a compound represented by General Formula (d0) in which Mm+ represents an m-valent organic cation, m represents an integer of 1 or greater, Yd0 represents a divalent linking group, and Rpg represents an acid dissociable group represented by General Formula (a0-pg). In Formula (a0-pg), A represents a cyclic alkene having only one carbon-carbon unsaturated bond in a ring skeleton, Ra01 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms, I represents an iodine atom, m1 represents an integer of 0 to 20, m2 represents an integer of 1 to 20, and * represents a bonding site that is bonded to —O— (oxy group) in -Yd0-CO—O—.
A resist composition including a base material component and a compound represented by General Formula (d0) in which Mm+ represents an m-valent organic cation, m represents an integer of 1 or greater, Yd0 represents a divalent linking group, and Rpg represents an acid dissociable group represented by General Formula (a0-pg). In Formula (a0-pg), A represents a cyclic alkene having only one carbon-carbon unsaturated bond in a ring skeleton, Ra01 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms, I represents an iodine atom, m1 represents an integer of 0 to 20, m2 represents an integer of 1 to 20, and * represents a bonding site that is bonded to —O— (oxy group) in -Yd0-CO—O—.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
Provided is a processing solution for a semiconductor device, containing a fluorine-containing compound, a cyclic ether compound, a diaminoalkane, and water.
A solvent composition formulated to dissolve cured photoresist on a semiconductor surface comprises about 1 to 30% by mass of at least one alkanolamine; about 10 to 95% by mass of at least one ethylene glycol ether; and zero to about 1% by mass of an N,N-disubstituted hydroxylamine. The N,N-disubstituted hydroxylamine is selected based on the at least one alkanolamine. In particular, the N,N-disubstituted hydroxylamine is alkanol-substituted in any solvent composition comprising N-methyldiethanolamine.
The present invention provides: a method for producing a porous film, with which it is possible to produce a porous film that has a small pore diameter and excellent permeability of a fluid; and a porous film which is produced by the method for producing a porous film. Provided is a method for producing a porous film, the method including a specific step in which a resin composition that contains a resin component (A), fine particles (B), and a solvent (S) is used, wherein: the resin component (A) is at least one selected from the group consisting of a polyamide acid, a polyimide, a polyamide-imide precursor, and a polyamide-imide; the fine particles (B) include fine particles (B1) and fine particles (B2); the fine particles (B1) and the fine particles (B2) each have an average particle diameter of 100 nm or less; and the average particle diameter of the fine particles (B2) is larger than the average particle diameter of the fine particles (B1).
C08J 9/26 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
The present invention employs a resist composition which generates an acid through exposure to light and undergoes a change in solubility in a developer solution by the action of an acid, the resist composition containing a base material component that undergoes a change in solubility in a developer solution by the action of an acid and a compound represented by general formula (d0). In general formula (d0), RArrepresents an aromatic ring. I represents an iodine atom, and Rd0represents a substituent other than an iodine atom. k represents an integer of 1 or more. j represents an integer of 0 or more. h represents 1, 2, or 3. Yd0represents an (h + 1)-valent linking group or a single bond. m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation. According to this resist composition, high sensitivity is achieved and lithography characteristics such as roughness reduction are enhanced in the formation of a resist pattern.
C07C 309/11 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton with the oxygen atom of at least one of the etherified hydroxy groups further bound to a carbon atom of a six-membered aromatic ring
The present invention provides: a porous film which has a small pore diameter and excellent fluid permeability; a method for purifying a liquid, the method using the porous film; a filter device which is composed of the porous film; and a filter device which comprises the porous film. The present invention uses a porous film which is formed of at least one resin component (A) that is selected from the group consisting of a polyimide and a polyamide-imide, or a resin composition that contains the resin component (A). The porous film has an average pore diameter of 5 nm to 40 nm inclusive and a specific pore distribution.
B01D 71/64 - PolyimidesPolyamide-imidesPolyester-imidesPolyamide acids or similar polyimide precursors
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
61.
RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND
Provided is a resist composition which generates an acid upon exposure to light, and of which the solubility in a developer solution is changed by the action of the acid. The resist composition contains a resin component (A1) of which the solubility in a developer solution is changed by the action of an acid, the resin component (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-m). W0represents a polymerizable-group-containing group. Each of R01and R02independently represents a chain hydrocarbon group that may have a substituent, and R01and R02may be bonded to each other to form a ring structure. R03 represents a chain hydrocarbon group that may have a substituent. Each of m0 and n0 independently represents an integer of 0-4, and 2 ≤ m0 + n0 ≤ 8. R04 represents a substituent. p0 represents an integer of 0 to 2(m0 + n0).
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07D 305/06 - Heterocyclic compounds containing four-membered rings having one oxygen atom as the only ring hetero atoms not condensed with other rings having no double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to the ring atoms
C07D 307/12 - Radicals substituted by oxygen atoms
C07D 309/06 - Radicals substituted by oxygen atoms
C07D 407/12 - Heterocyclic compounds containing two or more hetero rings, at least one ring having oxygen atoms as the only ring hetero atoms, not provided for by group containing two hetero rings linked by a chain containing hetero atoms as chain links
There are provided a processing solution containing an alkali compound, water, and a corrosion inhibitor, in which the amount of dissolved oxygen one week after the preparation of the processing solution is 0.2 mg/L or more and 1.5 mg/L or less, and the corrosion inhibitor is at least one selected from the group consisting of N,N-diethylhydroxylamine, 1-thioglycerol, 1-amino-4-methylpiperazine, carbohydrazide, methylethylketoxime, erythorbic acid, and salts thereof, a method for manufacturing the processing solution, and a method for processing a substrate and a method for manufacturing a semiconductor device using the processing solution.
The present invention provides a novel resist material which contains a heteropolyoxometalate having a modified lacunary site or a mixture thereof, the resist material being characterized in that the anion moiety of the heteropolyoxometalate having a modified lacunary site includes a plurality of polar groups having an acid-dissociable group. The present invention also provides a pattern formation method.
A substrate supporter that supports a substrate and a liquid supplier that supplies a liquid to a surface of the substrate supported by the substrate supporter. The liquid supplier supplies the substrate with a mixed solution prepared in a predetermined ratio of a main solution, pure water, and one or more of an additive, an oxidant, and an etching agent.
The present invention provides a novel heteropolyoxometalate having a modified lacunary site, the heteropolyoxometalate being represented by general formula (I), wherein a plurality of polar groups having an acid-dissociable group are introduced into the anion moiety of the heteropolyoxometalate. Formula (I): (Am+aa(C(am)-)
Provided is a resist composition that contains: a resin component (A1) for which the solubility thereof in a developing solution is changed by the action of an acid; and a fluorine-containing polymer compound (F0) having a constituent unit (f0) derived from a compound represented by general formula (f0-1). In the formula, W1is a polymerizable group-containing group. Lf00is an organic group having at least one hydroxyl group as a substituent group. Lf02is a linking group having a valency of l. Rf01 is a group that includes a fluoroalcohol structure.
C07C 69/88 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified carboxyl groups
C07C 69/90 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified hydroxyl and carboxyl groups
The present invention employs a negative photosensitive adhesive composition comprising an epoxy resin selected from the group consisting of bisphenol epoxy resins and hydrogenated bisphenol epoxy resins, an epoxy resin having a tensile elastic modulus of 100 MPa or less when cured alone, and a compound containing an anion represented by formula (I-an). In formula (I-an), A is selected from the group consisting of boron, aluminum, gallium, phosphorus, arsenic, and bismuth. X is a halogen atom. Rb1is an organic group. j is an integer of 1 to 3, k is an integer of 1 to 6, and l is an integer of 0 to 5. Rb1 may be connected to each other to form a divalent or higher organic group coordinating to A. l/(k + l) is at least 0 and less than 0.7. With such a negative photosensitive adhesive composition, substrates can be affixed to each other, warping of a laminate after affixing can be suppressed, and the amount of free halogen atoms can be reduced.
Provided are: a porous membrane capable of satisfactorily removing minute impurities when used as a filter for removing minute impurities from a liquid; a resist composition purification method using said porous membrane; and a resist film manufacturing method using a resist composition purified using said porous membrane. This porous membrane, comprising at least one resin component (A) selected from the group consisting of polyimide, polyamide imide, and polyethersulfone, or a resin composition containing the resin component (A), and having an average pore diameter of 9-40 nm and a surface area of 1,500 m2to 3,500 m2per 1 m2 of the porous membrane, as calculated on the basis of the specific surface area of the porous film measured by the BET method, is used.
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
A photosensitive composition having both etching resistance and good lithography properties, and capable of forming patterns with very small dimensions, and a method for producing a patterned cured film. The photosensitive composition includes a silicon-containing polymer including a phenolic hydroxy group, and an alkali-soluble group protected by an acid-dissociable group, and a photoacid generating agent, the photoacid generating agent including a photoacid generating agent having a sulfonium cation including an iodine atom.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A base material capable of forming a phase-separated structure excellent in horizontal orientation. The base material contains a block copolymer including a block (A1) having a constituent unit represented by the following Formula (a1) and a block (A2) having a constituent unit represented by the following Formula (a2), and a molar ratio of the constituent unit of the block (A2) of more than 0 mol % and 40 mol % or less. In Formula (a1), Ra11 represents a hydrogen atom, Ra12 represents a substituent, and n is an integer of 0 to 5; and in Formula (a2), Ra21 represents a hydrogen atom, L1 represents a single bond, and Y1 represents a divalent linking group having 1 to 15 carbon atoms
A base material capable of forming a phase-separated structure excellent in horizontal orientation. The base material contains a block copolymer including a block (A1) having a constituent unit represented by the following Formula (a1) and a block (A2) having a constituent unit represented by the following Formula (a2), and a molar ratio of the constituent unit of the block (A2) of more than 0 mol % and 40 mol % or less. In Formula (a1), Ra11 represents a hydrogen atom, Ra12 represents a substituent, and n is an integer of 0 to 5; and in Formula (a2), Ra21 represents a hydrogen atom, L1 represents a single bond, and Y1 represents a divalent linking group having 1 to 15 carbon atoms
C09D 153/00 - Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers
C08F 297/02 - Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
72.
PROTECTIVE FILM FORMATION AGENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP
A protective film forming agent for forming a protective film on a surface of a semiconductor wafer in dicing the semiconductor wafer, in which the protective film forming agent can form a protective film having excellent laser processability and reduced occurrence of cracks, and a method of manufacturing a semiconductor chip using the protective film forming agent. The protective film forming agent includes a water-soluble resin, a light absorbing agent, at least one monosaccharide or disaccharide plasticizer, and a solvent. The water-soluble resin may include a water-soluble resin having an aromatic ring and a water-soluble group.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
73.
NEGATIVE PHOTOSENSITIVE COMPOSITION, AND METHOD FOR PRODUCING PATTERNED CURED FILM
A negative photosensitive composition having both an etching resistance and good lithography properties, and capable of forming patterns with very small dimensions, and a method for producing a patterned cured film. The negative photosensitive composition includes a silicon-containing polymer including a phenolic hydroxy group, a photoacid generating agent, and a crosslinking agent, and the photoacid generating agent includes a photoacid generating agent) having a sulfonium cation including an iodine atom.
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
C08G 77/16 - Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxy groups
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A photosensitive composition capable of forming a fine pattern with high sensitivity and low roughness; a method for producing a patterned silicon-containing resin film using the photosensitive composition; and a silicon-containing resin that can be preferably incorporated into the photosensitive composition. The photosensitive composition includes a silicon-containing resin, a photoacid generating agent, and a cross-linking agent, and the silicon-containing resin has an aromatic group substituted with one or more iodine atoms.
C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
C08G 77/24 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen halogen-containing groups
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A photosensitive composition capable of forming a patterned silicon-containing resin film with suppressed roughness, and a method for producing a patterned silicon-containing resin film. The photosensitive composition includes a silicon-containing resin and a photoacid generating agent, the silicon-containing resin including a phenolic hydroxy group and a group capable of being cross-linked with an aromatic group having a phenolic hydroxy group under action of an acid, and the photoacid generating agent is a sulfonium salt including a sulfonium cation having a fluorine atom.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
A composition for selective modification of a base material having a surface containing two or more regions that are different in material from each other, the composition including a polymer and a solvent. The polymer has a block (A1) and a block (A2; the block (A1) has a constituent unit derived from at least one of styrene, a styrene derivative, and an (α-substituted) acrylate; the block (A2) having two or more groups represented by the following formula (1)
A composition for selective modification of a base material having a surface containing two or more regions that are different in material from each other, the composition including a polymer and a solvent. The polymer has a block (A1) and a block (A2; the block (A1) has a constituent unit derived from at least one of styrene, a styrene derivative, and an (α-substituted) acrylate; the block (A2) having two or more groups represented by the following formula (1)
A composition for selective modification of a base material having a surface containing two or more regions that are different in material from each other, the composition including a polymer and a solvent. The polymer has a block (A1) and a block (A2; the block (A1) has a constituent unit derived from at least one of styrene, a styrene derivative, and an (α-substituted) acrylate; the block (A2) having two or more groups represented by the following formula (1)
in which X represents a single bond or an oxygen atom, and R1 represents an alkyl group, and the group represented by the formula (1) is bonded to a carbon atom.
C08G 81/02 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
A resist composition including a base material component (A) and a compound (B0) represented by General Formula (b0), Ar0 represents an arylene group or a heteroarylene group, Rm1 and Rm2 represent a substituent other than an iodine atom, L01 represents a divalent linking group or a single bond, L02 represents a divalent linking group, Vb0 represents a single bond or the like, R0 represents a hydrogen atom or the like, nb1 represents an integer of 2 to 4, nb2 represents an integer of 1 to 3, and nb3 represents an integer of 0 to 2, nb4 represents an integer of 0 or greater, and nb5 represents an integer of 1 or greater, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater.
A resist composition including a base material component (A) and a compound (B0) represented by General Formula (b0), Ar0 represents an arylene group or a heteroarylene group, Rm1 and Rm2 represent a substituent other than an iodine atom, L01 represents a divalent linking group or a single bond, L02 represents a divalent linking group, Vb0 represents a single bond or the like, R0 represents a hydrogen atom or the like, nb1 represents an integer of 2 to 4, nb2 represents an integer of 1 to 3, and nb3 represents an integer of 0 to 2, nb4 represents an integer of 0 or greater, and nb5 represents an integer of 1 or greater, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
78.
METAL OXIDE DISPERSON AND METHOD FOR MANUFACTURING METAL OXIDE FILM USING SAME
Provided is a metal oxide dispersion having excellent gap-fill performance, and a method of manufacturing a metal oxide film using the same. A metal oxide dispersion according to a first aspect of the present invention contains carboxylic acid having 9 or more carbon atoms, metal oxide nanoparticles surface-treated with a capping agent, and a solvent. A metal oxide dispersion according to a second aspect of the present invention contains carboxylic acid having a boiling point of 250° C. or higher at an atmospheric pressure, metal oxide nanoparticles surface-treated with a capping agent, and a solvent. A method of manufacturing a metal oxide film according to a third aspect of the present invention comprises: a step for forming a coating film formed of the metal oxide dispersion described above; and a step for heating the coating film at a temperature of 165° C. or higher.
A silicon carbide single crystal substrate processing method by which the thickening of a desired surface of a SiC single crystal substrate can be achieved in a short time under mild conditions such as room temperature; and a silicon carbide single crystal substrate processing system applicable to the processing method. The silicon carbide single crystal substrate processing method includes performing anodic oxidation, in which a voltage is applied using the silicon carbide single crystal substrate as an anode while at least one main surface of the silicon carbide single crystal substrate is brought into contact with an electrolyte solution that does not contain fluorine anions, to thereby form an oxide film on the main surface.
Provided is a resist composition that generates an acid upon exposure to light and changes in terms of solubility in a developer solution due to the action of the acid. The present invention contains a compound containing a cation (C0) represented by formula (c0). In formula (c0): Ar01, Ar02, and Ar03are aromatic rings; X01, X02, and X03are halogen atoms, at least one being an iodine atom; Y01, Y02, and Y03are single bonds or divalent linking groups; Rpg01, Rpg02, and Rpg03are acid decomposable groups; R01, R02, and R03 are substituents; m01, m02, and m03 are integers equal to or greater than 1, provided that the valence allows; n01, n02, and n03 are integers equal to or greater than 0, provided that the valence allows; k01, k02, and k03 are 0 or 1; and k01 + k02 + k03 ≥ 1.
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C08F 12/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
Provided is a primer composition capable of improving adhesion between a substrate and a cured product layer formed of a cured product of a photosensitive composition regardless of a type of the substrate, a laminate including a primer layer derived from the primer composition, and a method for producing the laminate. The primer composition contains a base material component (A), a compound (B), and a solvent(S), the base material component (A) contains a resin (A1) and/or a polymerizable compound (A2), the polymerizable compound (A2) is a compound polymerizable by a polymerization mechanism other than radical polymerization, and the compound (B) has a functional group capable of forming a covalent bond by a reaction with an ethylenic unsaturated double bond-containing group in a photocurable compound (a) in a photosensitive composition.
C09J 5/02 - Adhesive processes in generalAdhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
C08J 7/043 - Improving the adhesiveness of the coatings per se, e.g. forming primers
C09J 129/04 - Polyvinyl alcoholPartially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
C09J 163/10 - Epoxy resins modified by unsaturated compounds
The present invention employs a resist composition that generates an acid through exposure to light to undergo a change in solubility with respect to a developer by means of the action of the acid, and that contains a compound represented by formula (d0) and a base material component that undergoes a change in solubility with respect to a developer by means of the action of an acid. In formula (d0), Rd1represents an alkyl group. k represents an integer of 2 or more. h represents an integer of 0 or more. Rd0represents a substituent. j represents an integer of 0 or more. Here, 5+2h≥j+k is satisfied. If h is 0, k represents an integer of 2-5, and, if h represents an integer of 1 or more, k is 2 or 3. m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation. With the resist composition, high sensitivity can be achieved and lithographic properties such as resolution and dimensional uniformity can be enhanced when forming a resist pattern.
C07C 69/16 - Acetic acid esters of dihydroxylic compounds
C07C 69/28 - Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen having three or more carbon atoms in the acid moiety esterified with dihydroxylic compounds
This resist composition contains a compound containing a cation (C0) represented by general formula (c0). In the formula, Rc1, Rc2, and Rc3represent linear or branched alkyl groups. Rpg1, Rpg2, and Rpg3represent acid-decomposable groups. Xh1, Xh2, and Xh3represent halogen atoms or trifluoromethyl groups. L01and L02each individually represent a hydrogen atom or a substituent group, and L01and L02 may bond to each other to form a ring together with the sulfur atom in the formula.
C07C 65/05 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring o-Hydroxy carboxylic acids
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
Provided are a resist composition, a resist pattern forming method, a compound, an acid generation agent, an acid diffusion control agent, and a high molecular weight compound which provide excellent sensitivity, roughness, and resolution. This resist composition contains a compound that includes a cation (C0) represented by general formula (c0) and that generates an acid through exposure to light to undergo a change in solubility with respect to a developer by means of the action of the acid. In general formula (c0), Ar01and Ar02each represent an aromatic ring. Rs01represents an aryl group, an alkyl group, or an alkenyl group. Rc01represents a substituent. R01and R02each represent a hydrocarbon group. Rh02represents a substituent including a halogen atom. Rc02represents a substituent other than a substituent including a halogen atom. Rs01and Ar02 are optionally bound to each other to form a ring together with the sulfur atom in the formula. k01 and k02 each represent an integer of 0 or more. m02 represents an integer of 1 or more.
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
This resist composition contains a resin component having a constitutional unit derived from a compound represented by general formula (a0-m0). In general formula (a0-m0), W is a polymerizable group-containing group. Ar01is an aromatic group, which may have a substituent. L01and L02are each independently a divalent linking group or a single bond. X0is an iodine atom or a bromine atom. Z022–, or a cyclic group containing a carbonate. m0 and n0 are each independently an integer of 1 or more, as long as valence allows.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07D 307/26 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having one double bond between ring members or between a ring member and a non-ring member
C07D 307/77 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
C07D 313/06 - Seven-membered rings condensed with carbocyclic rings or ring systems
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
This resist composition contains a resin component having a constitutional unit derived from a compound represented by general formula (a0-m0). In general formula (a0-m0), W is a polymerizable group-containing group. Ar01is an aromatic group, which may have a substituent. L01and L02are each independently a divalent linking group or a single bond. R01is an alkyl group or a hydrogen atom. Z022–, or a cyclic group containing a carbonate. m0 and n0 are each independently an integer of 1 or more, as long as valence permits.
C07D 307/77 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
A processing method for a silicon carbide single crystal substrate whereby it is possible to perform thick film processing of a desired surface of a SiC single crystal substrate in a short time under mild conditions such as room temperature, and a silicon carbide single crystal substrate processing system that can be applied to the processing method. The processing method for a silicon carbide single crystal substrate includes providing a silicon carbide single crystal substrate having a silicon carbide semiconductor layer epitaxially grown on a first main surface; bringing the first main surface into contact with an electrolyte solution containing fluorine anions while applying a voltage to the silicon carbide single crystal substrate as an anode, performing anodization, thereby forming a film containing oxygen on the first main surface; and removing the film by dry etching, ashing, or CMP.
Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The present invention contains: a resin component (A1), the solubility of which in a developer solution is changed by the action of an acid; an acid generator component (B) which generates an acid upon exposure to light; and a surfactant (G01). The acid generator component (B) and the surfactant (G01) do not contain a difluoromethyl group or a trifluoromethyl group. However, cases where the structure is represented by formula (np1), (np2) or (np3) are excluded. X1represents -OR1, -N(R2)R1, or -N(R122. X2represents a methyl group or the like. X3represents a methylene group or the like. R1and R1 each represent a methylene group or the like.
22-containing cyclic group, or a carbonate-containing cyclic group, and the acid generator component (B) contains a compound (B0) that has a perfluoro aromatic ring (excluding a PFAS compound).
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Disclosed is a resist composition which contains a resin component (A1), a compound (B0) that is represented by general formula (b0), and a fluororesin component (F1) that has a structural unit (f1) which comprises a base dissociable group having a specific structure. In the formula, Ar represents an aromatic ring. Rf0represents a fluorinated alkyl group having 1 to 5 carbon atoms, or a fluorine atom. L022-. Yb0represents a cyclic group. Rb0 represents an organic group. n01 is an integer of 1 or more, valence permitting. n02 is an integer of 0 or more, valence permitting.
The purpose of the present invention is to provide: a novel resist material which relates to a resist material that contains a metal oxoacid anion and an onium cation; a resist material for dry etching; a pattern forming method; a structure; and a patterned structure.
A resist composition that contains an alkali-soluble resin having a constitutional unit represented by General Formula (a10-1) and a constitutional unit represented by General Formula (a20-1) and has a LogP value of 2.8 or less, a compound (B0) having a molar absorption coefficient of 10,000 mol−1·L·cm−1 or less at a wavelength of 248 nm, and a crosslinking agent, where the resist composition has a concentration of solid contents of 15% by mass or more, Rx1 and Rx2 represent a hydrogen atom, Yax1 and Yax2 represent a single bond or a divalent linking group, Wax1 represents an aromatic hydrocarbon group which may have a substituent, nax1 represents an integer of 1 or more, Rax2 represents a hydrocarbon group.
A resist composition that contains an alkali-soluble resin having a constitutional unit represented by General Formula (a10-1) and a constitutional unit represented by General Formula (a20-1) and has a LogP value of 2.8 or less, a compound (B0) having a molar absorption coefficient of 10,000 mol−1·L·cm−1 or less at a wavelength of 248 nm, and a crosslinking agent, where the resist composition has a concentration of solid contents of 15% by mass or more, Rx1 and Rx2 represent a hydrogen atom, Yax1 and Yax2 represent a single bond or a divalent linking group, Wax1 represents an aromatic hydrocarbon group which may have a substituent, nax1 represents an integer of 1 or more, Rax2 represents a hydrocarbon group.
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
C09D 125/18 - Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
The present invention employs a resist composition which generates an acid by means of light exposure and of which the solubility in a developer solution is changed by the action of the acid, the resist composition containing: a base material component of which the solubility in a developer solution is changed by the action of an acid; and a compound (D0) which is represented by general formula (d0). In general formula (d0), RCyis a cyclic group containing a benzene ring, or an alicyclic group. Y01is a divalent linking group or a single bond. k is an integer equal to or greater than 1. Rd0is a substituent other than -Y01-CN. j is an integer equal to or greater than 0. Y02is a divalent linking group or a single bond. m is an integer equal to or greater than 1, and Mm+ represents a counter cation having a valence of m. This resist composition enables enhancement of lithography characteristics such as uniformity of pattern dimensions in the formation of a resist pattern, and improvement of etching resistance of a resist film.
C07C 255/41 - Carboxylic acid nitriles having cyano groups bound to acyclic carbon atoms having cyano groups bound to acyclic carbon atoms of a carbon skeleton containing at least one six-membered aromatic ring the carbon skeleton being further substituted by carboxyl groups, other than cyano groups
C07C 255/57 - Carboxylic acid nitriles having cyano groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing cyano groups and carboxyl groups, other than cyano groups, bound to the carbon skeleton
There are provided a processing solution including an oxidizing agent, a fluorine-based compound, an alkali metal compound and/or an alkaline earth metal compound, and water; a processing method of a semiconductor substrate using the same; and a manufacturing method of a semiconductor device using the same.
A resist composition comprising a base material component (A), an acid generator component (B), and a photodecomposable base (D0), in which the photodecomposable base (D0) contains a compound (D01) represented by General Formula (d0-1) and a compound (D02) represented by General Formula (d0-2), Rd01 represents a chain or cyclic aliphatic hydrocarbon group which may have a substituent, n01 represents an integer in a range of 1 to 10, Rd02 represents a cyclic aliphatic hydrocarbon group having an oxygen atom (═O), m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation
A resist composition comprising a base material component (A), an acid generator component (B), and a photodecomposable base (D0), in which the photodecomposable base (D0) contains a compound (D01) represented by General Formula (d0-1) and a compound (D02) represented by General Formula (d0-2), Rd01 represents a chain or cyclic aliphatic hydrocarbon group which may have a substituent, n01 represents an integer in a range of 1 to 10, Rd02 represents a cyclic aliphatic hydrocarbon group having an oxygen atom (═O), m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation
A diffusing agent composition capable of preventing generation of foreign matter in a coating film to be formed, and a method for manufacturing a semiconductor substrate using the diffusing agent composition. The diffusing agent composition includes an impurity diffusing component; and a solvent, in which a content of the impurity diffusing component is more than 0% by mass and 1.0% by mass or less, the solvent (S) includes a first solvent and a second solvent different from the first solvent, a boiling point of the first solvent under atmospheric pressure is 180° C. or higher, a hydrogen bonding force term δH of a Hansen solubility parameter of the first solvent is 14.0 or more, and a content of the first solvent is more than 0.10% by mass with respect to a mass of the solvent.
H01L 21/225 - Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regionsRedistribution of impurity materials, e.g. without introduction or removal of further dopant using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
C23C 8/42 - Solid state diffusion of only non-metal elements into metallic material surfacesChemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using liquids, e.g. salt baths, liquid suspensions only one element being applied
A photopolymerizable compound (A) and inorganic particles (B), and exhibiting good curability in a case that an initiator is added; a photosensitive composition including a photopolymerizable compound (A), inorganic particles (B), and an initiator (C), and exhibiting good curability; and a cured product of the photosensitive composition are provided. A compound having a specific structure including a radically polymerizable group-containing group is used as a photopolymerizable compound (A) in a composition including the photopolymerizable compound (A) and metal oxide particles (B), or a photosensitive composition including the photopolymerizable compound (A), metal oxide particles (B), and an initiator.
The present invention provides: a resist composition which is capable of forming a resist pattern that has good sensitivity and roughness; a resist pattern forming method in which the resist composition is used; a compound which is a starting material for a base material component of the resist composition; and a polymer compound which has a constituent unit that is derived from the compound. The present invention employs a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The resist composition contains a resin component (A1) which has a constituent unit (a0) that is derived from a compound represented by general formula (a0-m0). In the formula, W01is a polymerizable group-containing group. La01is a divalent linking group. Ra01and Ra02are each independently a fluorinated alkyl group, a fluorine atom, or a hydrogen atom. Rc01and Rc02 are each independently an aryl group which may have a substituent. The thiophene ring in the formula may have a substituent.
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C07D 207/452 - Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having three double bonds between ring members or between ring members and non-ring members having two doubly-bound oxygen atoms directly attached in positions 2 and 5 with only hydrogen atoms or radicals containing only hydrogen and carbon atoms directly attached to other ring carbon atoms, e.g. maleimide with hydrocarbon radicals, substituted by hetero atoms, directly attached to the ring nitrogen atom
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
C08F 220/12 - Esters of monohydric alcohols or phenols
C08F 246/00 - Copolymers in which the nature of only the monomers in minority is defined
The present invention provides, for example, a resist composition which has high sensitivity, and in which the occurrence of a defect is suppressed. The present invention employs a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of an acid, the resist composition containing: a base material component (A), the solubility of which in a developer solution is changed by the action of an acid; and a compound (C) which is represented by general formula (c0) and generates an acid upon exposure to light. In general formula (c0), X01is an electron withdrawing group. j is an integer of 1 to 5, and X01is coupled at least at an ortho position or a meta position. In cases where j is an integer of 2 or more, a plurality of X01moieties may be the same as or different from each other. R01is an aryl group which may have a substituent, an alkyl group which may have a substituent, or an alkenyl group which may have a substituent. Xc- represents a counter anion.
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
The present invention provides a system that contributes to improvement of work efficiency when a fluid circuit device is used. A system according to one embodiment of the present invention comprises: a structure (2); a movement mechanism unit (3) that enables the structure (2) to move between a first position and a second position different from the first position, the movement mechanism unit (3) having a chip (10) detachably connected thereto; and a positioning mechanism unit (4) that is linked to the movement mechanism unit (3) and is configured to be capable of positioning the chip (10).
