Tokyo Ohka Kogyo Co., Ltd.

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G03F 7/004 - Photosensitive materials 532
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists 488
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G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable 198
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01 - Chemical and biological materials for industrial, scientific and agricultural use 61
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1.

TAAC

      
Application Number 1859763
Status Registered
Filing Date 2025-02-05
Registration Date 2025-02-05
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
NICE Classes  ?
  • 01 - Chemical and biological materials for industrial, scientific and agricultural use
  • 05 - Pharmaceutical, veterinary and sanitary products
  • 16 - Paper, cardboard and goods made from these materials
  • 17 - Rubber and plastic; packing and insulating materials

Goods & Services

Glue and adhesives for industrial purposes; adhesives for use in industry; cement for footwear; adhesive materials for tiles; contact adhesives; adhesives for billposting; adhesives for use in the manufacture of printed circuit boards; adhesives for bookbinding; adhesives for ornamental paving; industrial adhesives for use in coating and sealing; adhesives for paving; adhesive preparations for surgical bandages; contact adhesives for use with wood; adhesives for wallpaper; conductive adhesives; roofing adhesives; adhesives for floor, ceiling and wall tiles; adhesives for semiconductors; starch paste adhesives, other than for stationery or household purposes; unprocessed plastics in primary form. Pharmaceutical preparations; reagent paper for medical purposes; surgical glues; medical adhesives for binding wounds; adhesive tapes for medical purposes. Pastes and other adhesives for stationery or household purposes. Adhesive tapes, other than stationery and not for medical or household purposes; adhesive sheets, other than stationery and not for medical or household purposes; anisotropic adhesive sheets, other than stationery and not for medical or household purposes; anisotropic conductive films and sheets; semi-processed plastics; plastic films, other than for wrapping; plastic sheets, other than for wrapping; adhesive-coated plastic films and sheets.

2.

METHOD OF MANUFACTURING PLATED ARTICLE

      
Application Number 18840867
Status Pending
Filing Date 2023-01-24
First Publication Date 2025-06-12
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Ojima, Daisuke
  • Kuroiwa, Yasushi

Abstract

A method for producing a plated article on a metal layer of a substrate which has the metal layer on a surface thereof, including forming a resist pattern to be used as a template for forming a plated article, using a photosensitive composition which includes a sulfur-containing compound and/or a nitrogen-containing compound each having a predetermined structure; before the plated article is formed, subjecting a surface made of metal exposed from a nonresist portion of the resist pattern to ashing; and detaching the resist pattern with a detaching liquid including a basic compound and then etching the metal layer which is on the substrate surface and on which the plated article has not been formed after the plated article formation.

IPC Classes  ?

  • G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking

3.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND ACID DIFFUSION CONTROL AGENT

      
Application Number JP2024039402
Publication Number 2025/121059
Status In Force
Filing Date 2024-11-06
Publication Date 2025-06-12
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Akimoto Yuri
  • Kato Hiroki

Abstract

Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which with respect to a developer solution is changed by the action of the acid. The present invention employs the resist composition containing a compound (D0) that is represented by general formula (d0). In the formula, Rarrepresents an aromatic ring which may have a substituent. R01represents a chain saturated hydrocarbon group having 1 to 10 carbon atoms. R02represents a hydrogen atom or an optionally substituted chain saturated hydrocarbon group having 1 to 10 carbon atoms. R03represents a halogen atom. j represents an integer of 1 or more, valence permitting. k represents an integer of 1 or more, valence permitting. Yd0represents a divalent linking group or a single bond. m represents an integer of 1 or more, and Mm+ represents an organic cation having a valence of m.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 65/21 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups
  • C07C 205/58 - Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by carboxyl groups having nitro groups and carboxyl groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton the carbon skeleton being further substituted by halogen atoms
  • C07C 381/12 - Sulfonium compounds
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

4.

RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

      
Application Number JP2024042365
Publication Number 2025/121266
Status In Force
Filing Date 2024-11-29
Publication Date 2025-06-12
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Adegawa Minoru
  • Nakamura Tsuyoshi
  • Takaki Daichi

Abstract

The present invention provides: a resist composition which ensures high sensitivity and from which a resist pattern having good roughness-reducing properties can be formed; and a resist pattern forming method using said resist composition. The present invention relates to a resist composition which generates an acid when exposed and of which the solubility in a developer changes due to the action of the acid, the resist composition comprising: a main material component (A) of which the solubility in a developer changes due to the action of an acid; an acid generator component (B) that generates an acid when exposed; a first acid diffusion control component (D1); and a second acid diffusion control component (D2), wherein the acid generator component (B) includes a compound represented by general formula (B1-1) disclosed in the specification, the first acid diffusion control component (D1) includes a compound represented by general formula (d1-1) or (d1-2) disclosed in the specification, and the second acid diffusion control component (D2) includes a compound represented by general formula (d2-1) disclosed in the specification.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

5.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, ACID GENERATION AGENT, AND ACID DIFFUSION CONTROL AGENT

      
Application Number JP2024040990
Publication Number 2025/121127
Status In Force
Filing Date 2024-11-19
Publication Date 2025-06-12
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Fujino Akiya
  • Onishi Koshi

Abstract

This resist composition generates an acid upon exposure to light, and the solubility of the resist composition in a developer solution changes due to the action of the acid. The resist composition contains a compound that includes a cation (C0) represented by general formula (c0). In general formula (c0), Rf0represents a fluorine atom or a fluorinated alkyl group. R01represents a substituent, and R02and R03each represent a substituent. L01and L02each represent a hydrogen atom or a substituent group, and L01and L02 may bond to each other to form a ring together with the sulfur atom in the formula. n0 and m0 each represent an integer of 1 to 4, p01 represents an integer of 0 to 3, and n0, m0 and p01 satisfy n0 + m0 + p01 ≤ 5. p02 and p03 each represent an integer of 0 to 3, q01 and q02 each independently represent an integer of 1 to 4, and p02, p03, q01 and q02 satisfy p02 + q01 ≤ 4 and p03 + q02 ≤ 4.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C08F 20/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

6.

POLYIMIDE RESIN PRECURSOR

      
Application Number 18843134
Status Pending
Filing Date 2023-01-30
First Publication Date 2025-06-12
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Ebisawa, Kazuaki

Abstract

A polyimide resin precursor that yields a polyimide resin having a low dielectric loss tangent and excelling in a chemical resistance property; a production method for the polyimide resin precursor; a photosensitive resin composition including the polyimide resin precursor as a polymerizable resin a patterned resin film using the photosensitive resin composition, and a production method for the patterned polyimide resin film. A polymer of a diamine compound and a dicarboxylic acid which is a reactant with a tetracarboxylic dianhydride and an alcohol is used as the polyimide resin precursor, and a compound that either has a combination of a secondary hydroxyl group and an ethylenically unsaturated double bond, or has a combination of a methylol group and an ethylenically unsaturated double bond, is used as the aforementioned alcohol.

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • C08G 69/40 - Polyamides containing oxygen in the form of ether groups
  • G03F 7/40 - Treatment after imagewise removal, e.g. baking

7.

RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number 18844607
Status Pending
Filing Date 2023-03-22
First Publication Date 2025-06-12
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Suzuki, Yosuke
  • Suzuki, Kenta
  • Kojima, Takahiro
  • Yoshida, Jun
  • Ikeuchi, Kengo

Abstract

A resist composition including a resin component which has a constitutional unit derived from a compound represented by General Formula (a0-1) below and a constitutional unit containing a lactone-containing cyclic group. In General Formula (a0-1), W01 represents a polymerizable group-containing group, Ya01 represents a single bond or a divalent linking group, Ra01 represents an acid dissociable group, q represents an integer of 0 to 3, n represents an integer of 1 or greater and n≤q×2+4 is satisfied A resist composition including a resin component which has a constitutional unit derived from a compound represented by General Formula (a0-1) below and a constitutional unit containing a lactone-containing cyclic group. In General Formula (a0-1), W01 represents a polymerizable group-containing group, Ya01 represents a single bond or a divalent linking group, Ra01 represents an acid dissociable group, q represents an integer of 0 to 3, n represents an integer of 1 or greater and n≤q×2+4 is satisfied

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08K 5/375 - Sulfides containing six-membered aromatic rings
  • C08K 5/41 - Compounds containing sulfur bound to oxygen
  • C08K 5/42 - Sulfonic acidsDerivatives thereof
  • C08K 5/45 - Heterocyclic compounds having sulfur in the ring
  • C08K 5/46 - Heterocyclic compounds having sulfur in the ring with oxygen or nitrogen in the ring
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

8.

INSPECTION METHOD, RESIN SOLUTION, RESIST COMPOSITION OR THERMOSETTING COMPOSITION, METHOD OF PRODUCING RESIN COMPOSITION, AND METHOD OF PRODUCING RESIST COMPOSITION OR THERMOSETTING COMPOSITION

      
Application Number 18962049
Status Pending
Filing Date 2024-11-27
First Publication Date 2025-06-12
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Hirahara, Komei
  • Kai, Yoshihito
  • Nakata, Akihiko

Abstract

An inspection method including a step V of filtering a precursor composition V containing a polymer compound and a solvent V, a step X1 of coating a substrate X with a resin composition X containing the precursor composition to form a coating film X, a step X2 of removing the coating film X from the substrate X using a removal solvent X including at least one selected from the group consisting of an organic solvent X, an alkali developing solution X, and water; and a step X3 of measuring the number of defects on the substrate X after the coating film X is removed, using a defect inspection device.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
  • G01N 21/956 - Inspecting patterns on the surface of objects

9.

RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, AND POLYMER COMPOUND

      
Application Number JP2024043099
Publication Number 2025/121384
Status In Force
Filing Date 2024-12-05
Publication Date 2025-06-12
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Fujimoto Yuuki
  • Kobayashi Ryota
  • Nagamine Takashi
  • Matsushita Tetsuya

Abstract

Provided is a resist composition which generates an acid upon exposure, and the solubility of which in a developer solution is changed by the action of the acid. The resist composition contains a resin component (A1) the solubility of which in a developer solution is changed by the action of an acid. The resin component (A1) has a structural unit (a01) that is represented by formula (a01) and a structural unit (a02) that is represented by formula (a02). In formula (a01) and formula (a02), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Ar0represents an aromatic hydrocarbon group, Ar01represents an aromatic hydrocarbon group, m0 represents an integer of 1 or more, Y02represents a single bond or a divalent linking group, Rf02represents a divalent linking group that contains a fluorine atom, m represents an integer of 1 or more; and Mm+ represents an m-valent cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 307/33 - Oxygen atoms in position 2, the oxygen atom being in its keto or unsubstituted enol form
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

10.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND

      
Application Number 18843880
Status Pending
Filing Date 2023-03-07
First Publication Date 2025-06-05
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Miyakawa, Junichi
  • Adachi, Yohei
  • Fujinami, Tetsuo
  • Ishii, Shuichi

Abstract

A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed by an action of an acid, the resist composition including a resin component whose solubility in a developing solution is changed by an action of an acid, in which the resin component has a constitutional unit represented by General Formula (a0-1) in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a halogen atom, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya0 represents a single bond or a divalent linking group; Va0 represents a single bond or a linear or branched alkylene group; and Mm+ represents an m-valent cation A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed by an action of an acid, the resist composition including a resin component whose solubility in a developing solution is changed by an action of an acid, in which the resin component has a constitutional unit represented by General Formula (a0-1) in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a halogen atom, or a halogenated alkyl group having 1 to 5 carbon atoms; Ya0 represents a single bond or a divalent linking group; Va0 represents a single bond or a linear or branched alkylene group; and Mm+ represents an m-valent cation

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/30 - Imagewise removal using liquid means
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

11.

RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, AND COMPOUND

      
Application Number JP2024041033
Publication Number 2025/115709
Status In Force
Filing Date 2024-11-19
Publication Date 2025-06-05
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Ebina Masanori

Abstract

Disclosed is a resist composition which contains a compound containing a cation (C0) represented by general formula (c0). (In the formula, Z+represents S+or I+. Ar1, Ar2, and Ar3each represent an aromatic ring. Rz11, Rz21, and Rz31each represent an alkyl group having 1 to 5 carbon atoms. Rz12, Rz22, and Rz32each represent a substituent. lz1, lz2, mz1, mz2, nz1, and nz2 are integers of 0 or more. However, at least one of lz1, mz1, and nz1 is an integer of 1 or more. In cases where Z+is S+, nz31 is 1, and in cases where Z+is I+, nz31 is 0.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 63/70 - Monocarboxylic acids
  • C07C 65/05 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring o-Hydroxy carboxylic acids
  • C07C 381/12 - Sulfonium compounds
  • C07D 333/76 - Dibenzothiophenes
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

12.

RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

      
Application Number 18837749
Status Pending
Filing Date 2023-04-19
First Publication Date 2025-06-05
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Someya, Yasuo
  • Kaiho, Takaaki
  • Ohboshi, Yuki

Abstract

A resist composition that generates an acid via light exposure, and whose solubility in a liquid developer changes through the action of the acid. The resist composition includes a base material component whose solubility in the liquid developer changes through the action of the acid, and an acid generating agent component that generates the acid via light exposure. The acid generating agent component includes a first acid generating agent and a second acid generating agent. The first acid generating agent and second acid generating agent include compounds represented by particular general formulas.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

13.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number JP2024041011
Publication Number 2025/115702
Status In Force
Filing Date 2024-11-19
Publication Date 2025-06-05
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Ebina Masanori

Abstract

This resist composition contains a compound comprising a cation (C0) represented by general formula (c0). (In the formula, Z+represents S+or I+; Ar1, Ar2, and Ar3each represent an aromatic ring; I is an iodine atom;Rz11, Rz21, and Rz31each represent an alkyl group having 1-5 carbon atoms; Iz1, lz2, lz3, mz1, mz2, mz3, nz1, nz2, and nz3 are each an integer of 0 or more, where at least one of lz1, mz1, and nz1 is an integer of 1 or more, and at least one of lz2, mz2, and nz2 is an integer of 1 or more; and if Z+is S+, nz31 is 1 and if Z+is I+, nz31 is 0.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 63/70 - Monocarboxylic acids
  • C07C 65/05 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring o-Hydroxy carboxylic acids
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

14.

RESIST MATERIAL, PATTERN FORMING METHOD, AND PATTERNED STRUCTURE

      
Application Number JP2024041687
Publication Number 2025/115818
Status In Force
Filing Date 2024-11-25
Publication Date 2025-06-05
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Inari, Takatoshi
  • Kimura, Kenta
  • Nagata, Masaya

Abstract

The objective of the present invention is to provide a novel resist material which is represented by general formula (I) and which contains: (A) a salt of a polyacid or a mixture thereof, wherein a cation moiety of said salt of a polyacid or said mixture thereof contains an onium cation or an onium dication having at least one polar group comprising an acid-dissociable group; and (B) an acid diffusion control agent. Also provided are a pattern formation method and a patterned structure. (I) (Am+aa(Bn+bb(C(am + bn)-)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

15.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND POLYMER

      
Application Number 18837387
Status Pending
Filing Date 2023-03-09
First Publication Date 2025-05-29
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Suzuki, Issei
  • Nguyen, Khanhtin
  • Onishi, Koshi

Abstract

A resist composition containing a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) in which W01 represents a polymerizable group-containing group; RAr represents an aromatic group; Ra0 represents an acid dissociable group represented by General Formula (a0-r-1); Ra01 represents an aliphatic hydrocarbon group; Ra02, Ra03, and Ra04 represent a hydrocarbon group or a hydrogen atom; Ra01 and Ra02 may be bonded to each other to form an alicyclic structure; Ra03 and Ra04 may be bonded to each other to form an aromatic ring structure or an alicyclic structure. The alicyclic structure formed by Ra01 and Ra02 are bonded to each other and the aromatic ring structure or the alicyclic structure formed by Ra03 and Ra04 are bonded to each other or may be condensed to each other; and Ra05 represents a chain-like or alicyclic hydrocarbon group or a hydrogen atom A resist composition containing a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) in which W01 represents a polymerizable group-containing group; RAr represents an aromatic group; Ra0 represents an acid dissociable group represented by General Formula (a0-r-1); Ra01 represents an aliphatic hydrocarbon group; Ra02, Ra03, and Ra04 represent a hydrocarbon group or a hydrogen atom; Ra01 and Ra02 may be bonded to each other to form an alicyclic structure; Ra03 and Ra04 may be bonded to each other to form an aromatic ring structure or an alicyclic structure. The alicyclic structure formed by Ra01 and Ra02 are bonded to each other and the aromatic ring structure or the alicyclic structure formed by Ra03 and Ra04 are bonded to each other or may be condensed to each other; and Ra05 represents a chain-like or alicyclic hydrocarbon group or a hydrogen atom

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07C 69/78 - Benzoic acid esters
  • C07C 69/84 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring
  • C07C 69/92 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with etherified hydroxyl groups
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/30 - Imagewise removal using liquid means

16.

PRODUCTION METHOD FOR HOLLOW STRUCTURE, LAMINATE

      
Application Number 18836505
Status Pending
Filing Date 2023-02-16
First Publication Date 2025-05-29
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Katayama, Shota
  • Yamagata, Kenichi
  • Imai, Hirofumi

Abstract

A production method for a hollow structure consisting of a concave portion and a top plate portion that blocks an opening surface of the concave portion is adopted, the production method including forming at least one of a side wall or the top plate portion by using a laminate of a support and a resist layer, in which the support consists of a polyethylene terephthalate film having a light transmittance of 85% or more at a wavelength of 365 nm and a haze value of 1.0% or less when irradiated with light having a wavelength of 365 nm, the resist layer consists of a photosensitive layer formed of a negative photosensitive composition, and an operation of exposing the resist layer via the support and developing the laminate after the exposure with a developing solution containing an organic solvent to form a negative pattern. According to this production method, when the side wall or the top plate portion of the hollow structure is formed, it is possible to further improve lithography characteristics (shape and defect reduction) of a pattern, and the hollow structure can be stably produced.

IPC Classes  ?

  • B32B 7/05 - Interconnection of layers the layers not being connected over the whole surface, e.g. discontinuous connection or patterned connection
  • B32B 27/08 - Layered products essentially comprising synthetic resin as the main or only constituent of a layer next to another layer of a specific substance of synthetic resin of a different kind
  • B32B 27/36 - Layered products essentially comprising synthetic resin comprising polyesters
  • B32B 37/24 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
  • B32B 38/00 - Ancillary operations in connection with laminating processes
  • B32B 38/10 - Removing layers, or parts of layers, mechanically or chemically
  • B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
  • G03F 7/028 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
  • H03H 9/64 - Filters using surface acoustic waves

17.

CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE COMPOSITION, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE, AND METHOD OF MANUFACTURING PLATED ARTICLE

      
Application Number 18840850
Status Pending
Filing Date 2023-01-24
First Publication Date 2025-05-29
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Ojima, Daisuke
  • Kuroiwa, Yasushi

Abstract

A chemically amplified positive-type photosensitive composition for forming a pattern serving as a template in a process of forming a plated article on a substrate having a metal layer on a surface thereof, the chemically amplified positive-type photosensitive composition being capable of easily forming a resist pattern having a cross-sectional shape in which a large undercut is formed and footing is suppressed. The chemically amplified positive-type photosensitive composition includes an acid generating agent that generates an acid by irradiation with an active ray or radiation, a resin having an alkali solubility that increases under action of an acid, a sulfur-containing compound containing a sulfur atom capable of coordinating with the metal layer, an acid diffusion suppressing agent, and an organic solvent, the resin containing an acrylic resin which contains a specific constituent unit, and the decomposition ratio (%) of the acid generating agent determined using specific steps is more than 0.5 and less than 10.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/16 - Coating processesApparatus therefor

18.

RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND ACID GENERATOR

      
Application Number 18839698
Status Pending
Filing Date 2023-03-06
First Publication Date 2025-05-22
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Nguyen, Khanhtin

Abstract

A resist composition including a base material component and a compound represented by General Formula (b0), in which Rpg represents an acid decomposable group, Rl0 represents a cyclic organic group which may have a substituent, L02 represents a divalent linking group, L01 represents a divalent linking group or a single bond, Rm1 represents a substituent other than an iodine atom, Vb0 represents a single bond, R0 represents a hydrogen atom, nb1 represents an integer of 1 to 4, nb2 represents an integer of 1 to 4, nb3 represents an integer of 0 to 3, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater A resist composition including a base material component and a compound represented by General Formula (b0), in which Rpg represents an acid decomposable group, Rl0 represents a cyclic organic group which may have a substituent, L02 represents a divalent linking group, L01 represents a divalent linking group or a single bond, Rm1 represents a substituent other than an iodine atom, Vb0 represents a single bond, R0 represents a hydrogen atom, nb1 represents an integer of 1 to 4, nb2 represents an integer of 1 to 4, nb3 represents an integer of 0 to 3, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

19.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT

      
Application Number JP2024037752
Publication Number 2025/105136
Status In Force
Filing Date 2024-10-23
Publication Date 2025-05-22
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Kato Hiroki
  • Akimoto Yuri

Abstract

Provided is a resist composition which generates an acid upon exposure to light and the solubility of which with respect to a developer solution changes due to the action of the acid, said resist composition comprising: a base material component (A), the solubility of which with respect to a developer solution changes due to the action of the acid; and a compound (D0) which is represented by general formula (d0). Rd01is a hydrogen atom, a fluorine atom, or a fluorinated alkyl group. Rd02is a fluorine atom or a fluorinated alkyl group. Yd0is a (h+1)-valent linking group or a single bond. h is an integer of 1-3. Ar is an aromatic ring. Rd03is a substituent other than an iodine atom. j is an integer of 0 or more, valence permitting. k is an integer or 1 or more, valence permitting. Rb11 is a substituent. m1 is an integer of 0-3.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 59/135 - Saturated compounds having only one carboxyl group and containing ether groups, groups, groups, or groups containing halogen
  • C07C 381/12 - Sulfonium compounds
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

20.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID GENERATOR

      
Application Number JP2024039843
Publication Number 2025/105311
Status In Force
Filing Date 2024-11-08
Publication Date 2025-05-22
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Fujimoto Yuuki

Abstract

Provided are a resist composition having enhanced effects of improved sensitivity, reduced roughness and suppressed film loss, a resist pattern formation method using the resist composition, a compound useful for the resist composition, and an acid generator containing the compound. A resist composition contains a base material component (A) and an acid generator component (B). The acid generator component (B) contains a compound (B0) represented by general formula (b0). In the formula, Ar1and Ar2are aromatic rings. Rfis a trifluoromethyl group or a fluorine atom. L1and L2are divalent linking groups. nb1 and nb2 are integers of 1 or more. nb3 is an integer of 1-4. 3≤nb1+nb2. nr1 and nr2 are integers of 0 or more as long as the valence is allowed. nr3 is an integer of 0-3. Mm+ represents a m-valence organic cation. m is an integer of 1 or more.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/42 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton having the sulfo groups bound to carbon atoms of non-condensed six-membered aromatic rings
  • C07C 309/44 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing doubly-bound oxygen atoms bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 333/76 - Dibenzothiophenes
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

21.

RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number 18838433
Status Pending
Filing Date 2023-03-02
First Publication Date 2025-05-15
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Suzuki, Issei
  • Onishi, Koshi

Abstract

A resist composition including a resin component which has a constitutional unit (a01) derived from a compound represented by General Formula (a0-1) and a constitutional unit (a02) derived from a compound represented by General Formula (a0-2), in which W01 and W02 represent a polymerizable group-containing group, Ya01 and Ya02 represent a single bond or a divalent linking group, Rax01 represents an acid dissociable group represented by Formula (a0-r-1) or (a0-r-2), q01 and q02 represent an integer of 0 to 3, n01 and n02 represent an integer of 1 or greater, Ra01 to Ra03 represent a hydrocarbon group, Ra04 represents a hydrocarbon group, Ra05a and Ra05b represent a hydrogen atom and Ra06 represents a hydrogen atom A resist composition including a resin component which has a constitutional unit (a01) derived from a compound represented by General Formula (a0-1) and a constitutional unit (a02) derived from a compound represented by General Formula (a0-2), in which W01 and W02 represent a polymerizable group-containing group, Ya01 and Ya02 represent a single bond or a divalent linking group, Rax01 represents an acid dissociable group represented by Formula (a0-r-1) or (a0-r-2), q01 and q02 represent an integer of 0 to 3, n01 and n02 represent an integer of 1 or greater, Ra01 to Ra03 represent a hydrocarbon group, Ra04 represents a hydrocarbon group, Ra05a and Ra05b represent a hydrogen atom and Ra06 represents a hydrogen atom

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/20 - ExposureApparatus therefor

22.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND

      
Application Number 18838801
Status Pending
Filing Date 2023-03-09
First Publication Date 2025-05-15
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Suzuki, Issei
  • Nguyen, Khanhtin
  • Onishi, Koshi

Abstract

A resist composition containing a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) in which Rm represents an alkyl group, a halogenated alkyl group, a halogen atom, or a hydrogen atom; L1 represents an aliphatic hydrocarbon group; n represents an integer of 0 to 2; Ra0 represents an acid dissociable group; Ra01 represents an aliphatic hydrocarbon group; Ra02, Ra03, and Ra04 represent a hydrocarbon group or a hydrogen atom; Ra01 and Ra02 may be bonded to each other to form an alicyclic structure; Ra03 and Ra04 may be bonded to each other to form an aromatic ring structure or an alicyclic structure; the alicyclic structure formed by Ra01 and Ra02 being bonded to each other and the aromatic ring structure or alicyclic structure formed by Ra03 and Ra04 being bonded to each other may be condensed to each other; and Ra05 represents a chain-like or alicyclic hydrocarbon group, or a hydrogen atom A resist composition containing a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) in which Rm represents an alkyl group, a halogenated alkyl group, a halogen atom, or a hydrogen atom; L1 represents an aliphatic hydrocarbon group; n represents an integer of 0 to 2; Ra0 represents an acid dissociable group; Ra01 represents an aliphatic hydrocarbon group; Ra02, Ra03, and Ra04 represent a hydrocarbon group or a hydrogen atom; Ra01 and Ra02 may be bonded to each other to form an alicyclic structure; Ra03 and Ra04 may be bonded to each other to form an aromatic ring structure or an alicyclic structure; the alicyclic structure formed by Ra01 and Ra02 being bonded to each other and the aromatic ring structure or alicyclic structure formed by Ra03 and Ra04 being bonded to each other may be condensed to each other; and Ra05 represents a chain-like or alicyclic hydrocarbon group, or a hydrogen atom

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/40 - Esters of unsaturated alcohols
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

23.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATING AGENT

      
Application Number 18937982
Status Pending
Filing Date 2024-11-05
First Publication Date 2025-05-15
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Sato, Makoto
  • Mori, Takayoshi
  • Eguchi, Ryohei
  • Nitta, Kazuyuki

Abstract

A resist composition that generates an acid upon exposure and whose solubility with respect to a liquid developer changes by an action of the acid. The resist composition includes a base material component whose solubility with respect to a liquid developer changes by an action of an acid; an acid generating agent component that generates an acid upon exposure; and an acid diffusion control agent component, in which the acid generating agent component includes a compound represented by a general formula (b1-1) A resist composition that generates an acid upon exposure and whose solubility with respect to a liquid developer changes by an action of the acid. The resist composition includes a base material component whose solubility with respect to a liquid developer changes by an action of an acid; an acid generating agent component that generates an acid upon exposure; and an acid diffusion control agent component, in which the acid generating agent component includes a compound represented by a general formula (b1-1)

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

24.

METHOD FOR PRODUCING STRUCTURE HAVING PHASE-SEPARATED STRUCTURE

      
Application Number 18930500
Status Pending
Filing Date 2024-10-29
First Publication Date 2025-05-08
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Miyagi, Ken
  • Dazai, Takahiro
  • Tsuchiya, Junichi
  • Takeshita, Masaru

Abstract

A method for producing a structure having a phase-separated structure that can improve misalignment of a cylinder structure or line roughness and form alignment marks well. The method includes forming a layer including a block copolymer and having a thickness t on a substrate using a resin composition containing the block copolymer, and separating the layer into a cylinder structure. The thickness t is set such that a relationship between the thickness t and a period L0 of the block copolymer satisfies a specific formula.

IPC Classes  ?

  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/16 - Coating processesApparatus therefor

25.

NEGATIVE PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE RESIST FILM, METHOD FOR PRODUCING HOLLOW STRUCTURE, AND PATTERN FORMING METHOD

      
Application Number JP2024037748
Publication Number 2025/094787
Status In Force
Filing Date 2024-10-23
Publication Date 2025-05-08
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Kondo Takahiro
  • Katayama Shota
  • Furuhashi Tomoo
  • Yamagata Kenichi
  • Ishibashi Yasuhiro

Abstract

Provided are a negative photosensitive composition capable of forming a pattern having a good shape and capable of enhancing adhesion to a side wall of a hollow structure, a photosensitive resist film having a photosensitive film formed by using the negative photosensitive composition, and a method for manufacturing a hollow structure and pattern forming method that use the negative photosensitive composition. The negative photosensitive composition contains a trifunctional or higher polyfunctional epoxy compound, a cationic polymerization initiator, and a bifunctional aromatic epoxy compound having a molecular weight of 800 or less. In this negative photosensitive composition, the proportion of the content of the bifunctional aromatic epoxy compound is 0.6–10% by mass with respect to the total content (100% by mass) of the polyfunctional epoxy compound and the bifunctional aromatic epoxy compound.

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • C08G 59/02 - Polycondensates containing more than one epoxy group per molecule
  • C08G 59/08 - Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof of polyhydric phenols from phenol-aldehyde condensates
  • C08G 59/68 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the catalysts used
  • G03F 7/20 - ExposureApparatus therefor

26.

WATER-REPELLING AGENT FOR ELECTROCONDUCTIVE ARTICLE SURFACE, WATER-REPELLENCY-IMPARTING METHOD FOR ELECTROCONDUCTIVE ARTICLE SURFACE, METHOD FOR SELECTIVELY IMPARTING WATER REPELLENCY FOR REGION HAVING ELECTROCONDUCTIVE ARTICLE SURFACE, SURFACE TREATMENT METHOD, AND METHOD FOR FORMING FILM ON SELECTED REGION OF SUBSTRATE SURFACE

      
Application Number 18730248
Status Pending
Filing Date 2023-01-05
First Publication Date 2025-05-08
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Tanaka, Daichi
  • Seki, Kenji
  • Tajima, Kazuya

Abstract

A water-repelling agent for an electroconductive article surface, including a compound that contains an aromatic ring, an adsorption group which is bonded to the aromatic ring and is an amino group, a phosphonic acid group, an acid anhydride group, a thiol group, or an acid chloride group, and a linear or branched alkyl group or a linear or branched fluorinated alkyl group bonded to the aromatic ring

IPC Classes  ?

  • C09D 5/16 - Anti-fouling paintsUnderwater paints
  • C09D 7/63 - Additives non-macromolecular organic
  • C23C 16/02 - Pretreatment of the material to be coated
  • C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

27.

HETEROPOLYOXOMETALATE HAVING MODIFIED LACUNARY SITE, OR MIXTURE THEREOF

      
Application Number JP2024038003
Publication Number 2025/094825
Status In Force
Filing Date 2024-10-24
Publication Date 2025-05-08
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Nishizawa, Akito
  • Inari, Takatoshi

Abstract

The present invention provides: a novel heteropolyoxometalate having a modified lacunary site, obtained by modifying the lacunary site of a heteropoly anion having a lacunary site and by introducing an organic sulfonium cation, an organic sulfonium dication, or an organic iodonium cation as a counter cation of the heteropoly anion having the modified lacunary site; or a mixture thereof.

IPC Classes  ?

  • C07C 381/12 - Sulfonium compounds
  • C07C 25/28 - Halogenated styrenes
  • C07C 43/225 - Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing halogen
  • C07C 43/23 - Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing hydroxy or O-metal groups
  • C07D 327/06 - Six-membered rings
  • C07D 333/34 - Sulfur atoms
  • C07D 333/46 - Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
  • C07D 333/54 - Benzo [b] thiophenesHydrogenated benzo [b] thiophenes with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
  • C07D 333/76 - Dibenzothiophenes
  • C07D 335/02 - Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
  • C07F 7/08 - Compounds having one or more C—Si linkages
  • C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
  • C07F 7/12 - Organo silicon halides

28.

HETEROPOLYOXOMETALATE HAVING MODIFIED LACUNARY SITE, OR MIXTURE THEREOF

      
Application Number JP2024038004
Publication Number 2025/094826
Status In Force
Filing Date 2024-10-24
Publication Date 2025-05-08
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Nishizawa, Akito
  • Inari, Takatoshi
  • Uno, Kakishi

Abstract

The present invention provides: a novel heteropolyoxometalate having a modified lacunary site, obtained by modifying the lacunary site of a heteropoly anion having a lacunary site, using a metal ion, an ammonium cation, an ammonium dication, a phosphonium cation, or a phosphonium dication as a counter cation of the heteropoly anion; or a mixture thereof.

IPC Classes  ?

  • C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
  • C07C 211/08 - Monoamines containing alkyl groups having a different number of carbon atoms
  • C07C 215/40 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton with quaternised nitrogen atoms bound to carbon atoms of the carbon skeleton
  • C07C 219/08 - Compounds containing amino and esterified hydroxy groups bound to the same carbon skeleton having esterified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having at least one of the hydroxy groups esterified by a carboxylic acid having the esterifying carboxyl group bound to an acyclic carbon atom of an acyclic unsaturated carbon skeleton
  • C07C 229/12 - Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton the nitrogen atom of the amino group being further bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings to carbon atoms of acyclic carbon skeletons
  • C07C 233/36 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by amino groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom having the carbon atom of the carboxamide group bound to a hydrogen atom or to a carbon atom of an acyclic saturated carbon skeleton
  • C07C 271/44 - Esters of carbamic acids having oxygen atoms of carbamate groups bound to carbon atoms of six-membered aromatic rings with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms to hydrogen atoms or to carbon atoms of unsubstituted hydrocarbon radicals
  • C07D 487/08 - Bridged systems
  • C07F 7/08 - Compounds having one or more C—Si linkages
  • C07F 7/10 - Compounds having one or more C—Si linkages containing nitrogen
  • C07F 7/12 - Organo silicon halides
  • C07F 9/54 - Quaternary phosphonium compounds

29.

POLYACID SALT OR MIXTURE THEREOF

      
Application Number JP2024038005
Publication Number 2025/094827
Status In Force
Filing Date 2024-10-24
Publication Date 2025-05-08
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Uno, Kakishi
  • Inari, Takatoshi

Abstract

The purpose of the present invention is to provide a novel polyacid salt or a mixture thereof by introducing, into a cation part of a polyacid salt, an organic quaternary ammonium cation, an organic quaternary ammonium dication, or a pyridinium cation, each of which having two or more ethylenically unsaturated double bonds.

IPC Classes  ?

  • C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
  • C07C 215/40 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton with quaternised nitrogen atoms bound to carbon atoms of the carbon skeleton
  • C07C 233/36 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by amino groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom having the carbon atom of the carboxamide group bound to a hydrogen atom or to a carbon atom of an acyclic saturated carbon skeleton

30.

METHOD FOR PRODUCING HETEROPOLYOXOMETALATE HAVING MODIFIED LACUNARY SITE, OR MIXTURE THEREOF

      
Application Number JP2024038006
Publication Number 2025/094828
Status In Force
Filing Date 2024-10-24
Publication Date 2025-05-08
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Nishizawa, Akito
  • Inari, Takatoshi

Abstract

The present invention provides a novel method for producing a heteropolyoxometalate having a modified lacunary site, or a mixture thereof, the method comprising: a step for using a Keggin-type or Dawson-type heteropolyoxometalate as a mono-lacunary Keggin-type or Dawson-type heteropolyoxometalate; and a step for obtaining a heteropolyoxometalate having a modifiect lacunary site by reacting the mono-lacunary Keggin-type or Dawson-type heteropolyoxometalate with a P, Si, Ge, or Sn compound having one or more hydro groups or an organic group and two or more leaving groups.

IPC Classes  ?

  • C07C 381/12 - Sulfonium compounds
  • C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
  • C07F 9/54 - Quaternary phosphonium compounds

31.

METHOD FOR PRODUCING POLYACID SALTS OR MIXTURES THEREOF, AND METHOD FOR REMOVING IMPURITIES

      
Application Number JP2024038207
Publication Number 2025/094854
Status In Force
Filing Date 2024-10-25
Publication Date 2025-05-08
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Inari, Takatoshi
  • Noda, Kunihiro
  • Nishizawa, Akito

Abstract

The present invention provides a method for producing polyacid salts or mixtures thereof, wherein impurities can effectively be removed without decomposing polyacid anions, which are the anion portions of the polyacid salts or mixtures thereof, by washing polyacid salts having prescribed counter cations or mixtures of the polyacid salts with an acidic aqueous solution having a pH of 6 or less.

IPC Classes  ?

32.

CLEANING LIQUID AND CLEANING METHOD

      
Application Number JP2024038222
Publication Number 2025/094855
Status In Force
Filing Date 2024-10-25
Publication Date 2025-05-08
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Hirano Isao

Abstract

The present invention employs a cleaning liquid containing a solvent and a metal remover. In the cleaning liquid, two or more solvents are included, the distance (HSP distance) between the Hansen solubility parameter of the cleaning liquid and the Hansen solubility parameter of dimethylacetamide is 1.0 or less, and the content of metal impurities is 0.1 × 10-9parts by mass or more and 102× 10-6 parts by mass or less with respect to 100 parts by mass of the total of the solvent and the metal remover. This cleaning liquid improves impurity removal.

IPC Classes  ?

33.

CLEANING LIQUID AND CLEANING METHOD

      
Application Number JP2024038225
Publication Number 2025/094856
Status In Force
Filing Date 2024-10-25
Publication Date 2025-05-08
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Hirano Isao

Abstract

The present invention employs a cleaning liquid containing a solvent and a metal remover. In the cleaning liquid, two or more solvents are included, the distance (HSP distance) between the Hansen solubility parameter of the cleaning liquid and the Hansen solubility parameter of dimethylacetamide is 1.0 or less, and the total content of an organic substance selected from the group consisting of organic acid multimers, organic acid esters, and ketone bodies is 0.1 × 10-9parts by mass or more and 105× 10-6 parts by mass or less with respect to 100 parts by mass of the total of the solvent and the metal remover. This cleaning liquid improves removal of organic impurities.

IPC Classes  ?

34.

PHOTOSENSITIVE COMPOSITION

      
Application Number 18694200
Status Pending
Filing Date 2022-08-18
First Publication Date 2025-05-01
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Urakawa, Kazuki
  • Shiota, Dai

Abstract

A photosensitive composition including a radically polymerizable compound (A), and a radical polymerization initiator (C), which tends to hardly occur excessive decrease of weight of a cured product and a component other than a solvent in the photosensitive composition, and having good curability, and a cued product of the photosensitive composition are provided. A compound having a specific structure including a radically polymerizable group-containing group and a radically polymerizable compound other than the compound having the specific structure are used in combination as a radically polymerizable compound (A) in a photosensitive composition including the radically polymerizable compound (A) and a radical polymerization initiator (C).

IPC Classes  ?

  • G03F 7/028 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
  • G03F 7/004 - Photosensitive materials

35.

PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number 18924413
Status Pending
Filing Date 2024-10-23
First Publication Date 2025-05-01
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Iioka, Jun
  • Gell, Aaron
  • Eto, Takahiro

Abstract

There are provided a processing solution, including: (a) a compound capable of releasing a fluoride anion or a salt thereof; (b) a water-soluble organic solvent; (c) water; and (d) a nitrogen-containing aromatic compound, in which an anion content of the nitrogen-containing aromatic compound at 25° C. is 5 ppm or more and 30 ppm or less; a method for processing a substrate; and a method for manufacturing a semiconductor.

IPC Classes  ?

  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
  • C11D 7/06 - Hydroxides
  • C11D 7/10 - Salts
  • C11D 7/32 - Organic compounds containing nitrogen
  • C11D 7/50 - Solvents
  • C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
  • C23C 16/34 - Nitrides
  • C23C 16/56 - After-treatment

36.

METHOD FOR PRODUCING LAMINATED FILM, LAMINATED FILM, AND CO2 SEPARATION METHOD

      
Application Number JP2024037858
Publication Number 2025/089318
Status In Force
Filing Date 2024-10-24
Publication Date 2025-05-01
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Sugawara Tsukasa

Abstract

2222222 separation film; a porous film bonding step of bonding the porous film onto the coating film; and a sacrificial layer removing step of removing the sacrificial layer after the porous film bonding step. The raw material composition contains a silicon-containing resin and an organic solvent. The silicon-containing resin is a non-water-soluble resin. The silicon-containing resin has a mass average molecular weight of 2000 or more.

IPC Classes  ?

  • B01D 69/12 - Composite membranesUltra-thin membranes
  • B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
  • B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
  • B01D 69/10 - Supported membranesMembrane supports
  • B01D 71/64 - PolyimidesPolyamide-imidesPolyester-imidesPolyamide acids or similar polyimide precursors
  • B01D 71/70 - Polymers having silicon in the main chain, with or without sulfur, nitrogen, oxygen or carbon only
  • B32B 5/18 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer containing foamed or specifically porous material
  • B32B 27/00 - Layered products essentially comprising synthetic resin
  • B32B 37/02 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations

37.

FILM-FORMING COMPOSITION, CURED FILM, PRODUCTION METHOD FOR CURED FILM, PRODUCTION METHOD FOR MULTILAYER BODY, AND CO2 SEPARATION METHOD

      
Application Number JP2024037859
Publication Number 2025/089319
Status In Force
Filing Date 2024-10-24
Publication Date 2025-05-01
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Sugawara Tsukasa

Abstract

22 separation method using the multilayer body produced via said production method. The film-forming composition includes polydimethylsiloxane, a curing agent, and at least one hydroxamic acid or related substance selected from among hydroxamic acids and salts thereof, and the content of the hydroxamic acid or related substance is greater than 0 mass% and less than 5 mass% relative to the mass of the polydimethylsiloxane.

IPC Classes  ?

  • C09D 183/04 - Polysiloxanes
  • B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
  • B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
  • B01D 69/10 - Supported membranesMembrane supports
  • B01D 69/12 - Composite membranesUltra-thin membranes
  • B01D 71/70 - Polymers having silicon in the main chain, with or without sulfur, nitrogen, oxygen or carbon only
  • C08J 7/04 - Coating
  • C09D 7/63 - Additives non-macromolecular organic

38.

METHOD FOR MANUFACTURING MULTILAYER BODY AND CO2 SEPARATION METHOD

      
Application Number JP2024037860
Publication Number 2025/089320
Status In Force
Filing Date 2024-10-24
Publication Date 2025-05-01
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Senzaki Takahiro
  • Noguchi Takuya
  • Sugawara Tsukasa

Abstract

22 separation film on the sacrifice layer, bonding the support base material on the film, and then removing the support body and the sacrifice layer, the sacrifice layer can be easily removed with a liquid such as water. The present invention specifically provides a method for manufacturing a multilayer body, the method including: a step for forming a sacrificial layer on a support body using a sacrificial layer forming composition; a step for forming a film on the sacrificial layer; a step for bonding a support base material on the film; a step for separating the support body after the bonding step; and a step for removing the sacrificial layer by dissolving the sacrificial layer into a liquid after the separation step. In this method for manufacturing a multilayer body, there is used a sacrificial layer forming composition which includes a resin, a polyol, and a solvent, wherein the resin has a functional group I which is one or more groups selected from the group consisting of a hydroxyl group, a cyano group, and a carboxyl group, and a functional group II which is a hydrophilic group or a hydrophobic group other than the functional group I.

IPC Classes  ?

  • B32B 7/06 - Interconnection of layers permitting easy separation
  • B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
  • B01D 69/10 - Supported membranesMembrane supports
  • B01D 69/12 - Composite membranesUltra-thin membranes
  • B32B 27/30 - Layered products essentially comprising synthetic resin comprising vinyl resinLayered products essentially comprising synthetic resin comprising acrylic resin
  • C08F 220/06 - Acrylic acidMethacrylic acidMetal salts or ammonium salts thereof

39.

RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND POLYMER COMPOUND

      
Application Number JP2024037928
Publication Number 2025/089351
Status In Force
Filing Date 2024-10-24
Publication Date 2025-05-01
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Fujino Akiya
  • Kato Hiroki

Abstract

The present invention provides a resist composition which generates an acid upon exposure to light and changes a solubility in a developer liquid due to the action of the acid. This resist composition containing a resin component (A1) of which the solubility in a developer liquid changes due to the action of the acid, and the resin component (A1) has a constituent unit (a0) that is represented by general formula (a0-1). In formula (a0-1), L01represents a divalent linking group which contains at least one heteroatom that is selected from the group consisting of an oxygen atom, a nitrogen atom, and a sulfur atom; L02represents a divalent linking group; L03represents a single bond or the divalent linking group; R01represents a hydrocarbon group which may have a substituent; R02represents a hydrocarbon group which may have the substituent; m represents an integer of 1 or more; and Mm+ represents an m-valent cation. With such a resist composition, it is possible to form a resist pattern that has high sensitivity and reduced roughness.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 69/734 - Ethers
  • C07C 233/55 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring having the carbon atom of the carboxamide group bound to a carbon atom of an unsaturated carbon skeleton
  • C07C 233/85 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom of an acyclic unsaturated carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C08F 212/04 - Monomers containing only one unsaturated aliphatic radical containing one ring
  • C08F 222/10 - Esters
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

40.

PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number 18924422
Status Pending
Filing Date 2024-10-23
First Publication Date 2025-05-01
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Iioka, Jun
  • Gell, Aaron
  • Eto, Takahiro

Abstract

There are provided a processing solution, including: (a) a compound capable of releasing a fluoride anion or a salt thereof; (b) a water-soluble organic solvent; (c) water; and (d) a nitrogen-containing aromatic compound, in which a mass ratio of a nonionic component of the nitrogen-containing aromatic compound to a total amount of ammonia and an ammonium ion at 35° C. is more than 0.5 and less than 1; a method for processing a substrate; and a method for manufacturing a semiconductor substrate.

IPC Classes  ?

  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • B08B 3/08 - Cleaning involving contact with liquid the liquid having chemical or dissolving effect
  • C11D 7/10 - Salts
  • C11D 7/32 - Organic compounds containing nitrogen
  • C11D 7/50 - Solvents
  • C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
  • C23C 16/34 - Nitrides
  • C23C 16/56 - After-treatment

41.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND

      
Application Number 18725976
Status Pending
Filing Date 2023-01-17
First Publication Date 2025-04-24
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Matsushita, Tetsuya

Abstract

A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1), in which R01 represents a hydrogen atom, L01 represents a divalent linking group, Ra01 and Ra02 each independently represent a hydrocarbon group which may have a substituent, Ar01 represents an aryl group in which some or all hydrogen atoms are substituted with iodine atoms, and the aryl group may have a substituent other than the iodine atoms A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1), in which R01 represents a hydrogen atom, L01 represents a divalent linking group, Ra01 and Ra02 each independently represent a hydrocarbon group which may have a substituent, Ar01 represents an aryl group in which some or all hydrogen atoms are substituted with iodine atoms, and the aryl group may have a substituent other than the iodine atoms

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • C07C 69/675 - Esters of carboxylic acids having esterified carboxyl groups bound to acyclic carbon atoms and having any of the groups OH, O-metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids of saturated hydroxy-carboxylic acids
  • C07C 69/76 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 333/28 - Halogen atoms
  • C07D 493/08 - Bridged systems
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

42.

RESIST UNDERLAYER FILM FORMATION COMPOSITION, RESIST PATTERN FORMATION METHOD, FORMATION METHOD FOR RESIST UNDERLAYER FILM PATTERN, AND PATTERN FORMATION METHOD

      
Application Number 18725992
Status Pending
Filing Date 2022-12-22
First Publication Date 2025-04-24
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Ibata, Keiichi
  • Takeshita, Masaru

Abstract

A composition for forming a resist underlayer film, including a furan resin, a thermal acid generator component that generates an acid by heat, and a solvent; a resist pattern formation method including forming a resist underlayer film on a substrate using the composition, forming a resist film on the resist underlayer film using the resist composition, exposing the resist film to light, and developing the resist film exposed to light to form a resist pattern; and a formation method for a resist underlayer film pattern and a pattern formation method, including the resist pattern formation method.

IPC Classes  ?

  • G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F 7/20 - ExposureApparatus therefor

43.

PHOTOCURABLE COMPOSITION AND METHOD FOR FORMING PATTERN

      
Application Number 18712975
Status Pending
Filing Date 2022-12-12
First Publication Date 2025-04-17
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Mizusawa, Ryuma

Abstract

A photocurable composition including an acrylic resin, an epoxy group-containing compound excluding a component corresponding to the acrylic resin, and a cationic polymerization initiator. The acrylic resin has a glass transition point of 0° C. or lower and has a constitutional unit derived from an epoxy group-containing acrylic monomer. A content proportion of the constitutional unit in a total amount of all constitutional units constituting the acrylic resin is greater than 0% by mass and less than 50% by mass.

IPC Classes  ?

  • C08G 59/22 - Di-epoxy compounds
  • C08G 59/40 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the curing agents used
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/085 - Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives

44.

RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number JP2024035414
Publication Number 2025/079491
Status In Force
Filing Date 2024-10-03
Publication Date 2025-04-17
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Someya Yasuo
  • Hayakawa Yu

Abstract

22-containing cyclic group, or a carbonate-containing cyclic group, at least one of the constituent units (a1) being a constituent unit represented by general formula (a1-1). The acid generator component (B) contains a compound (B1) represented by general formula (b0-1). The acid diffusion control component (D) contains one or more compounds (D1) (excluding the compound (B1)) selected from the group consisting of a compound represented by general formula (d0-1) and a compound represented by general formula (d0-2).

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07D 295/26 - Sulfur atoms
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 307/33 - Oxygen atoms in position 2, the oxygen atom being in its keto or unsubstituted enol form
  • C07D 313/10 - Seven-membered rings condensed with carbocyclic rings or ring systems condensed with two six-membered rings
  • C07D 327/04 - Five-membered rings
  • C07D 493/18 - Bridged systems
  • C07D 497/08 - Bridged systems
  • C08F 220/12 - Esters of monohydric alcohols or phenols
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

45.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number JP2024035783
Publication Number 2025/079553
Status In Force
Filing Date 2024-10-07
Publication Date 2025-04-17
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Kato Hiroki
  • Fujino Akiya
  • Nguyen Khanhtin

Abstract

Provided is a resist composition that generates an acid upon exposure to light, and has a varied solubility in a developer solution by the action of the acid. The resist composition contains a resin component (A1) of which solubility in a developer solution changes by the action of an acid, and the resin component (A1) has a structural unit (a0) derived from a compound represented by general formula (a0-m). W0represents a polymerizable group-containing group. Ar0represents an aromatic group which may have a substituent. Y0represents a divalent linking group. V0represents a single bond, an alkylene group, or a fluorinated alkylene group. Rf01and Rf02each independently represent a hydrogen atom, a fluorine atom or a fluorinated alkylene group. Both Rf01and Rf02cannot be hydrogen atoms. m is an integer of 1 or greater, and Mm+ is a m-valent cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 59/135 - Saturated compounds having only one carboxyl group and containing ether groups, groups, groups, or groups containing halogen
  • C07C 69/90 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified hydroxyl and carboxyl groups
  • C07C 381/12 - Sulfonium compounds
  • C07D 333/76 - Dibenzothiophenes
  • C08F 212/04 - Monomers containing only one unsaturated aliphatic radical containing one ring
  • C08F 220/12 - Esters of monohydric alcohols or phenols
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

46.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND

      
Application Number JP2024031705
Publication Number 2025/079370
Status In Force
Filing Date 2024-09-04
Publication Date 2025-04-17
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Kato Hiroki
  • Nguyen Khanhtin

Abstract

The present invention is a resist composition containing a resin component that has a structural unit derived from a compound represented by general formula (a0-m0). In general formula (a0-m0), W0represents a polymerizable group-containing group. Rarrepresents an aromatic group which may have a substituent. L01represents a divalent linking group or a single bond. L02represents a divalent linking group or a single bond. Z0 represents a cyclic group which may have a substituent. Rdg represents an acid-decomposable group whose polarity is increased by the action of an acid. This resist composition can increase etching resistance.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • G03F 7/20 - ExposureApparatus therefor

47.

RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND POLYMER COMPOUND

      
Application Number JP2024034490
Publication Number 2025/074941
Status In Force
Filing Date 2024-09-26
Publication Date 2025-04-10
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Ebina Masanori

Abstract

The present invention provides: a resist composition which has good sensitivity, resolution, and etching resistance; a resist pattern forming method; a polymer compound; and a compound. The present invention employs a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The resist composition contains a resin component which has a constituent unit (a0) represented by general formula (a0-1). In the formula, Ar represents an aromatic ring. L1and L2each represent a divalent linking group or a single bond. Rs represents a substituent other than an iodine atom. C01represents a secondary carbon atom or a tertiary carbon atom. The acid dissociable group has a carbon-carbon unsaturated bond which is formed by the α-position of C01and the β-position of C01. R12and R13each represent a chain hydrocarbon group which may have a substituent, or alternatively, R12and R13122 represents a number of 0 or more.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07C 69/86 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified hydroxyl groups
  • C08F 8/04 - Reduction, e.g. hydrogenation
  • C08F 12/04 - Monomers containing only one unsaturated aliphatic radical containing one ring
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

48.

RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number 18729822
Status Pending
Filing Date 2023-01-24
First Publication Date 2025-04-03
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Miyazaki, Masato
  • Hirayama, Fumitake
  • Kohno, Shinichi
  • Nakagawa, Yusuke

Abstract

A resist composition including a resin component that has a constitutional unit containing an acid decomposable group whose polarity is increased due to an action of an acid, a constitutional unit represented by General Formula (a10-1), and a constitutional unit represented by General Formula (a5-1), and a resin component that has a constitutional unit represented by General Formula (z1-1) and no acid dissociable group. In the formulae, Wax1 represents an aromatic hydrocarbon group, Ra5 represents an acid non-dissociable aliphatic cyclic group in which some carbon atoms forming a ring skeleton may be substituted with oxygen atoms, and Rz0 represents a hydrogen atom or a hydrocarbon group containing no acid dissociable group A resist composition including a resin component that has a constitutional unit containing an acid decomposable group whose polarity is increased due to an action of an acid, a constitutional unit represented by General Formula (a10-1), and a constitutional unit represented by General Formula (a5-1), and a resin component that has a constitutional unit represented by General Formula (z1-1) and no acid dissociable group. In the formulae, Wax1 represents an aromatic hydrocarbon group, Ra5 represents an acid non-dissociable aliphatic cyclic group in which some carbon atoms forming a ring skeleton may be substituted with oxygen atoms, and Rz0 represents a hydrogen atom or a hydrocarbon group containing no acid dissociable group

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

49.

METHOD OF PRODUCING RESIST COMPOSITION PURIFIED PRODUCT, RESIST PATTERN FORMING METHOD, AND RESIST COMPOSITION PURIFIED PRODUCT

      
Application Number 18894241
Status Pending
Filing Date 2024-09-24
First Publication Date 2025-04-03
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Kanamaru, Takuma
  • Watahiki, Kosuke
  • Akiyama, Satoshi

Abstract

A method of producing a resist composition purified product, the method including a step of filtering a resist composition through a filter having a porous structure in which adjacent spherical cells communicate with each other, in which the filter includes a porous membrane containing at least one resin selected from the group consisting of polyimide and polyamide-imide, the resist composition contains a resin component (A1) whose solubility in a developing solution is changed by an action of an acid and an organic solvent component, and the resin component (A1) contains a copolymer having a constitutional unit (a01) with an onium salt structure that generates sulfonic acid upon light exposure and a constitutional unit (a02) with an onium salt structure that generates a carboxylic acid upon light exposure.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/075 - Silicon-containing compounds

50.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND

      
Application Number 18726225
Status Pending
Filing Date 2023-01-17
First Publication Date 2025-03-27
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Matsushita, Tetsuya

Abstract

A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) or a constitutional unit derived from a compound represented by General Formula (a0-2). In the formulae, R01 and R02 represent a hydrogen atom; L01 and L02 represent a single bond or a divalent linking group; Ar01 and Ar02 represent an aryl group substituted with iodine atoms; Xa01 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ar01 is bonded; Ra02 represents a hydrocarbon group which may have a substituent; and Xa02 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ra02 is bonded and a group which is bonded to Ar02 to form a condensed ring A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) or a constitutional unit derived from a compound represented by General Formula (a0-2). In the formulae, R01 and R02 represent a hydrogen atom; L01 and L02 represent a single bond or a divalent linking group; Ar01 and Ar02 represent an aryl group substituted with iodine atoms; Xa01 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ar01 is bonded; Ra02 represents a hydrocarbon group which may have a substituent; and Xa02 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ra02 is bonded and a group which is bonded to Ar02 to form a condensed ring

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • C08F 20/40 - Esters of unsaturated alcohols
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

51.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, ACID GENERATOR, AND ACID DIFFUSION CONTROL AGENT

      
Application Number JP2024033454
Publication Number 2025/063233
Status In Force
Filing Date 2024-09-19
Publication Date 2025-03-27
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Onishi Koshi
  • Fujino Akiya

Abstract

Provided is a resist composition which generates an acid upon exposure to light and the solubility of which, in a developing solution, changes upon the action of an acid. The resist composition contains a compound that includes a cation (C0) represented by general formula (c0). Y0denotes an oxygen atom-containing polar group. X01and X02each denote a halogen atom or a halogenated alkyl group. R01, R02and R03each denote a substituent group. L01and L02each denote a hydrogen atom or a substituent group, and L01and L02 may bond to each other to form a ring together with a sulfur atom in the formula. n0 and m0 each denote an integer between 1 and 4, p01 denotes an integer between 0 and 3, and n0+m0+p01≤5. p02, q01, p03 and q02 each denote an integer between 0 and 4, p02+q01≤4, p03+q02≤4, and q01+q02≥1.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 63/70 - Monocarboxylic acids
  • C07C 65/05 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring o-Hydroxy carboxylic acids
  • C07C 65/10 - Salicylic acid
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 309/19 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton containing rings
  • C07C 309/23 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an unsaturated carbon skeleton containing rings other than six-membered aromatic rings
  • C07C 381/12 - Sulfonium compounds
  • C07D 333/76 - Dibenzothiophenes
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/10 - Esters
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

52.

SOLVATE OF POLYACID SALT AND METHOD FOR PRODUCING SAME

      
Application Number JP2024031892
Publication Number 2025/057857
Status In Force
Filing Date 2024-09-05
Publication Date 2025-03-20
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Uno, Kakishi
  • Inari, Takatoshi

Abstract

The purpose of the present invention is to provide: a solvate of a polyacid salt in which dispersibility or solubility in a solvent is improved compared to the polyacid salt itself, the solvate of a polyacid salt being characterized in that the solvent solvated with the polyacid salt includes a first solvent that is a good solvent with respect to the polyacid salt; and a method for producing the solvate of a polyacid salt.

IPC Classes  ?

  • C07C 381/12 - Sulfonium compounds
  • C07B 63/00 - PurificationSeparation specially adapted for the purpose of recovering organic compoundsStabilisationUse of additives
  • C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
  • C07C 215/40 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton with quaternised nitrogen atoms bound to carbon atoms of the carbon skeleton
  • C07F 9/54 - Quaternary phosphonium compounds
  • C07F 11/00 - Compounds containing elements of Groups 6 or 16 of the Periodic Table

53.

RESIST MATERIAL AND METHOD FOR PRODUCING SAME

      
Application Number JP2024031893
Publication Number 2025/057858
Status In Force
Filing Date 2024-09-05
Publication Date 2025-03-20
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Uno, Kakishi
  • Inari, Takatoshi
  • Kimura, Kenta
  • Kubo, Keisuke
  • Nishizawa, Akito
  • Nagata, Masaya

Abstract

The purpose of the present invention is to provide a novel resist material and a method for producing the resist material, the resist material having a film-forming property and comprising: a polyacid salt or a solvate thereof; a first solvent; and a second solvent.

IPC Classes  ?

54.

RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number JP2024032532
Publication Number 2025/057975
Status In Force
Filing Date 2024-09-11
Publication Date 2025-03-20
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Hatakeyama Kyo
  • Yahagi Masahito

Abstract

The present invention relates to a resist composition in which an acid is generated by exposure and solubility in a developer is changed by the action of the acid. The resist composition comprises: a base material component (A) of which the solubility in a developer changes due to the action of an acid; and an acid generator component (B) that generates an acid by exposure. The acid generator component (B) includes a compound (B1) represented by formula (b1), a compound (B2) represented by formula (b2), and a compound (B3) represented by formula (b3) in the description.

IPC Classes  ?

55.

RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number JP2024032537
Publication Number 2025/057977
Status In Force
Filing Date 2024-09-11
Publication Date 2025-03-20
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Hatakeyama Kyo
  • Yahagi Masahito

Abstract

The present invention relates to a resist composition in which an acid is generated by exposure and solubility in a developer is changed by the action of the acid. The resist composition comprises: a base material component (A) of which the solubility in a developer changes due to the action of an acid; and an acid generator component (B) that generates an acid by exposure. The acid generator component (B) includes a compound (B1) represented by formula (b1), a compound (B2) represented by formula (b2), and a compound (B3) represented by formula (b3) in the description.

IPC Classes  ?

56.

RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

      
Application Number JP2024032547
Publication Number 2025/057979
Status In Force
Filing Date 2024-09-11
Publication Date 2025-03-20
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Takaki Daichi
  • Sakata Makoto
  • Miyazaki Masato

Abstract

The present invention provides: a resist composition from which a resist pattern having favorable roughness-reducing properties can be formed; and a resist pattern forming method using said resist composition. The present invention pertains to a resist composition which generates an acid when exposed to light and of which the solubility in a developing solution changes due to the action of the acid, the resist composition comprising a base material component (A) of which the solubility in a developing solution changes due to the action of an acid, and an acid diffusion control component (D), wherein: the base material component (A) contains a polymer compound (A1) having a weight-average molecular weight of at least 30,000; the polymer compound (A1) has a constitutional unit (a1) represented by general formula (a-1) and a constitutional unit (a2) represented by general formula (a-2), which are disclosed in the specification; and the acid diffusion control component (D) contains at least one compound (D1) selected from the group consisting of compounds represented by general formula (d1-1) disclosed in the specification and compounds represented by general formula (d1-2) disclosed in the specification.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 307/33 - Oxygen atoms in position 2, the oxygen atom being in its keto or unsubstituted enol form
  • C07D 327/04 - Five-membered rings
  • C08F 220/10 - Esters
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

57.

PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

      
Application Number 18828149
Status Pending
Filing Date 2024-09-09
First Publication Date 2025-03-13
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Iioka, Jun
  • Gell, Aaron

Abstract

There are provided a processing solution, including: an oxidizing agent (A), and hexafluorosilicic acid (B), in which a molar ratio of the content of the hexafluorosilicic acid (B) to the content of the oxidizing agent (A) is from 8 to 1900; a method for processing a substrate; and a method for manufacturing a semiconductor substrate.

IPC Classes  ?

  • C11D 7/08 - Acids
  • C11D 7/32 - Organic compounds containing nitrogen
  • C11D 7/34 - Organic compounds containing sulfur
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

58.

POROUS FILM AND METHOD FOR PRODUCING POROUS FILM

      
Application Number JP2024031189
Publication Number 2025/053071
Status In Force
Filing Date 2024-08-30
Publication Date 2025-03-13
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Noguchi Takuya
  • Akiyama Satoshi
  • Sugiyama Shinya
  • Nishibata Mikio

Abstract

Provided are: a porous film capable of having a reduced hole diameter and an improved flow rate; and a method for producing the porous film. This porous film contains at least one resin component (A) selected from the group consisting of polyimides, polyamide imides, and polyether sulfones, and a solvent (S). The solvent (S) includes a nitrogen-containing polar solvent (S1) having a boiling point of at least 200°C under atmospheric pressure, and the contained amount of the nitrogen-containing polar solvent (S1) in the porous film is 10-2000 ppm.

IPC Classes  ?

  • B01D 71/64 - PolyimidesPolyamide-imidesPolyester-imidesPolyamide acids or similar polyimide precursors
  • B01D 71/68 - PolysulfonesPolyethersulfones
  • C08J 9/26 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
  • C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
  • C08L 81/06 - PolysulfonesPolyethersulfones

59.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT

      
Application Number JP2024027941
Publication Number 2025/047314
Status In Force
Filing Date 2024-08-05
Publication Date 2025-03-06
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Fujinami Tetsuo

Abstract

Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The present invention contains: a base material component (A) of which the solubility in a developing solution changes due to the action of an acid; and a compound (D0) represented by formula (d0). Ar01is an aromatic ring; X01is a halogen atom; Rd01is a substituent (excluding halogen atoms and hydroxy groups); Rx0is a group represented by the formula (Rx0-1); m01 and n01 are integers of 0 or more, valence permitting; Mm+is an m-valent cation; Ar02is an aromatic ring; X02is a halogen atom; Ld01is a single bond or an alkylene group; Ld02is an alkylene group; Rd02 is a substituent other than a halogen atom; m02 and n02 are integers of 0 or more, valence permitting (all of k0 of m02 are not 0 when m01 is 0).

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 65/24 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic
  • C07C 381/12 - Sulfonium compounds
  • C07D 333/76 - Dibenzothiophenes
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

60.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND POLYMER

      
Application Number 18726559
Status Pending
Filing Date 2023-01-20
First Publication Date 2025-03-06
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Onishi, Koshi
  • Miyakawa, Junichi

Abstract

A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed due to an action of the acid, in which a polymer compound having a constitutional unit derived from a compound represented by General formula (a0-1) is employed as a resin component whose solubility in a developing solution is changed due to the action of the acid. In General Formula (a0-1), W01 represents a polymerizable group-containing group, W02 represents an aromatic hydrocarbon group, Ya01 represents a divalent linking group or a single bond, Ra01 represents an acid dissociable group. Ra02 represents a chain-like hydrocarbon group which may have a substituent or an alicyclic hydrocarbon group which may have a substituent, m represents an integer of 1 or greater, and n represents an integer of 1 or greater A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed due to an action of the acid, in which a polymer compound having a constitutional unit derived from a compound represented by General formula (a0-1) is employed as a resin component whose solubility in a developing solution is changed due to the action of the acid. In General Formula (a0-1), W01 represents a polymerizable group-containing group, W02 represents an aromatic hydrocarbon group, Ya01 represents a divalent linking group or a single bond, Ra01 represents an acid dissociable group. Ra02 represents a chain-like hydrocarbon group which may have a substituent or an alicyclic hydrocarbon group which may have a substituent, m represents an integer of 1 or greater, and n represents an integer of 1 or greater

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

61.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT

      
Application Number JP2024028988
Publication Number 2025/047431
Status In Force
Filing Date 2024-08-14
Publication Date 2025-03-06
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Fujinami Tetsuo

Abstract

Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The present invention contains: a base material component (A) of which the solubility in a developer changes due to the action of an acid; and a compound (D0) represented by formula (d0). Cy0is a cyclic group; Rx0is a group represented by formula (Rx0-1); Rd01is a substituent; m01 is an integer of 0 or more, valence permitting; and k0 is an integer of 2 or more, valence permitting. Mm+is an m-valent cation. Ar0is an aromatic ring; Ld0is a divalent linking group containing a hetero atom; and Rd02 is a substituent. m02 is an integer of 0 or more, and * represents a bond.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 65/24 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic
  • C07C 205/60 - Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by carboxyl groups having nitro groups and carboxyl groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton the carbon skeleton being further substituted by singly-bound oxygen atoms in ortho-position to the carboxyl group, e.g. nitro-salicylic acids
  • C07C 233/81 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups
  • C07C 381/12 - Sulfonium compounds
  • C07D 333/76 - Dibenzothiophenes
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

62.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER COMPOUND, AND COMPOUND

      
Application Number JP2024029622
Publication Number 2025/047532
Status In Force
Filing Date 2024-08-21
Publication Date 2025-03-06
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Matsushita Tetsuya

Abstract

This resist composition contains a resin component (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-1) (in the formula, Ra01represents a hydrogen atom, an alkyl group, or a halogenated alkyl group, L01represents a single bond, *1-C(=O)-O-*2, or *1-C(=O)-NH-*2, Ar01represents an aromatic group, L02represents a single bond or a divalent linkage group, Ra02represents a hydrogen atom or an alkyl group, I represents an iodine atom, m01 represents an integer of 1 or more, Mmd+ represents an m-valent onium cation, and m represents an integer of 1 or more).

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 65/19 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups having unsaturation outside the aromatic ring
  • C07C 65/28 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups having unsaturation outside the aromatic rings
  • C07C 69/54 - Acrylic acid estersMethacrylic acid esters
  • C07C 381/12 - Sulfonium compounds
  • C07D 333/76 - Dibenzothiophenes
  • C08F 12/04 - Monomers containing only one unsaturated aliphatic radical containing one ring
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

63.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER COMPOUND, AND COMPOUND

      
Application Number JP2024029092
Publication Number 2025/041704
Status In Force
Filing Date 2024-08-15
Publication Date 2025-02-27
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Nguyen Khanhtin

Abstract

Provided is a resist composition containing a resin component (A1) that includes a constituent unit (a0) derived from a compound represented by general formula (a0-1). (In the formula, W0is a polymerizable group-containing group; La01is a single bond or a divalent linking group; Ar0is an aromatic ring; I is an iodine atom; m0 is an integer of 0 or more; Ra0is an organic group which may have a substituent; n0 is an integer of 0 or more; La02is a single bond or a divalent linking group; m is an integer of 1 or more; and Mm+ is a m-valent cation.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 25/18 - Polycyclic aromatic halogenated hydrocarbons
  • C07C 59/90 - Unsaturated compounds containing keto groups containing singly bound oxygen-containing groups
  • C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
  • C07C 381/12 - Sulfonium compounds
  • C08F 12/22 - Oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

64.

RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

      
Application Number 18714343
Status Pending
Filing Date 2022-12-22
First Publication Date 2025-02-27
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Sunamichi, Tomonari
  • Hashimoto, Haruna
  • Hirano, Tomoyuki
  • Nakagawa, Yusuke

Abstract

A resist composition containing a resin, an acid generator, and a crosslinking agent, in which the resin is an alkali-soluble resin having a molar absorption coefficient of 2,000 mol−1·L·cm−1 or less at a wavelength of 248 nm, and the crosslinking agent is at least one of a melamine-based crosslinking agent, a urea-based crosslinking agent, an alkylene urea-based crosslinking agent, a glycoluril-based crosslinking agent, and an epoxy-based crosslinking agent.

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/004 - Photosensitive materials

65.

RESIN COMPOSITION FOR FORMING PHASE-SEPARATED STRUCTURE AND METHOD FOR PRODUCING STRUCTURE HAVING PHASE-SEPARATED STRUCTURE

      
Application Number 18776834
Status Pending
Filing Date 2024-07-18
First Publication Date 2025-02-27
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Miyagi, Ken
  • Dazai, Takahiro
  • Iino, Shota

Abstract

A resin composition for forming a phase-separated structure that can improve a process margin. A resin composition for forming a phase-separated structure containing a predetermined block copolymer A and a predetermined block copolymer B, the composition having a ratio (L0B/L0A) of L0 of the block copolymer B (L0B) to L0 of the block copolymer A (L0A) of 0.70 or more and 1.20 or less.

IPC Classes  ?

  • C09D 153/00 - Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers

66.

RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND ACID GENERATOR

      
Application Number JP2024028923
Publication Number 2025/041682
Status In Force
Filing Date 2024-08-13
Publication Date 2025-02-27
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Fujino Akiya

Abstract

Disclosed is a resist composition which contains a base material component (A) and a compound (B0) represented by general formula (b0). (In the formula, Ar represents an aromatic ring; I represents an iodine atom; OH represents a hydroxy group; L01represents a divalent linking group; Rf01represents a fluorinated alkyl group or an aromatic group having one or more fluorine atoms; L02represents a divalent linking group; Rf02represents an organic group having three or more fluorine atoms; x represents an integer of zero or more; y represents an integer of zero or more; z represents an integer of one or more; Mmd+ represents an m-valent counter cation; and m represents an integer of one or more.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/42 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton having the sulfo groups bound to carbon atoms of non-condensed six-membered aromatic rings
  • C07C 381/12 - Sulfonium compounds
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 333/76 - Dibenzothiophenes
  • C09K 3/00 - Materials not provided for elsewhere
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

67.

RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND POLYMER COMPOUND

      
Application Number JP2024029576
Publication Number 2025/041781
Status In Force
Filing Date 2024-08-21
Publication Date 2025-02-27
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Kobayashi Ryota
  • Nagamine Takashi

Abstract

Disclosed is a resist composition which contains a resin component that has a constitutional unit derived from formula (a0-m0). In the formula, W01represents a polymerizable group-containing group; La01represents a divalent linking group; Ra01and Ra02each represent a fluorinated alkyl group, a fluorine atom or a hydrogen atom; Rc01, Rc02, and Rc03each represent a halogen atom, a hydroxy group, or an alkoxy group having 1 to 4 carbon atoms; Rc04and Rc05each represent a halogen atom, a hydroxy group, an alkoxy group having 1 to 4 carbon atoms, or a hydrogen atom, or alternatively, Rc04and Rc0501020301020301020301020303 are satisfied.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07D 333/76 - Dibenzothiophenes
  • C08F 12/04 - Monomers containing only one unsaturated aliphatic radical containing one ring
  • C08F 20/12 - Esters of monohydric alcohols or phenols
  • C08F 22/40 - Imides, e.g. cyclic imides
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

68.

PHOTOSENSITIVE COMPOSITION

      
Application Number 18723757
Status Pending
Filing Date 2022-11-30
First Publication Date 2025-02-20
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Urakawa, Kazuki
  • Shiota, Dai

Abstract

A photosensitive composition including a radically polymerizable compound (A), and a radical polymerization initiator (C), which tends to hardly occur excessive decrease of weight of a cured product and a component other than a solvent in the photosensitive composition, and having good curability, and a cued product of the photosensitive composition are provided. A compound having a specific structure including a radically polymerizable group-containing group and a radically polymerizable compound other than the compound having the specific structure are used in combination as a radically polymerizable compound (A) in a photosensitive composition including the radically polymerizable compound (A) and a radical polymerization initiator (C).

IPC Classes  ?

  • G03F 7/028 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
  • C08K 3/22 - OxidesHydroxides of metals

69.

SURFACE TREATMENT AGENT, SURFACE TREATMENT METHOD, AND AREA-SELECTIVE FILM FORMING METHOD ON SUBSTRATE SURFACE

      
Application Number 18940071
Status Pending
Filing Date 2024-11-07
First Publication Date 2025-02-20
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Iioka, Jun
  • Seki, Kenji
  • Nakamura, Taiji

Abstract

A surface treatment agent including a compound (P) represented by R1—P(═O)(OR2)(OR3) in which R1 is an alkyl group, an alkoxy group, a fluorinated alkyl group, or an aromatic hydrocarbon group which may have a substituent, and R2 and R3 are each independently a hydrogen atom, an alkyl group, a fluorinated alkyl group, or an aromatic hydrocarbon group which may have a substituent; a compound (S) represented by R—SH . . . in which R is an alkyl group having 3 or more carbon atoms, a fluorinated alkyl group having 3 or more carbon atoms, or an aromatic hydrocarbon group which may have a substituent; and a solvent.

IPC Classes  ?

  • C09D 7/63 - Additives non-macromolecular organic
  • C23C 16/02 - Pretreatment of the material to be coated
  • C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

70.

RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT

      
Application Number JP2024028983
Publication Number 2025/037629
Status In Force
Filing Date 2024-08-14
Publication Date 2025-02-20
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Adachi Yohei

Abstract

Disclosed is a resist composition that contains: a resin component (A1), the solubility of which in a developer solution is changed by the action of an acid; and a compound (D0) which is represented by general formula (d0-1). (In the formula, Cy1 represents a cyclic group including an aliphatic ring; Cy2 represents a benzene ring or a naphthalene ring; Xd01represents an iodine atom or a bromine atom; Rd01and Rd02each represent a substituent; Ld01represents a divalent linking group; Ld02represents a divalent linking group or a single bond; m01 represents an integer of 1 or more; n01 and n02 each represent an integer of 0 or more; Mmd+ represents an organic cation; and md represents an integer of 1 or more.)

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 25/18 - Polycyclic aromatic halogenated hydrocarbons
  • C07C 65/26 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic containing rings other than six-membered aromatic rings
  • C07C 69/76 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring
  • C07C 69/753 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of polycyclic acids
  • C07C 233/63 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of rings other than six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups
  • C07C 311/14 - Sulfonamides having sulfur atoms of sulfonamide groups bound to carbon atoms of rings other than six-membered aromatic rings
  • C07C 381/12 - Sulfonium compounds
  • C07D 333/76 - Dibenzothiophenes
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

71.

RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD

      
Application Number 18719786
Status Pending
Filing Date 2022-12-12
First Publication Date 2025-02-13
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Adegawa, Minoru
  • Nakamura, Tsuyoshi
  • Takaki, Daichi
  • Tsuji, Hiromitsu
  • Nakamura, Kumi

Abstract

A resist composition containing a resin component that exhibits changed solubility in a developing solution under action of an acid, a photodecomposable base, and a fluorine additive component. The fluorine additive component includes a polymeric compound having a constitutional unit represented by General Formula (f01-1) and a constitutional unit represented by General Formula (f02-1). In the formulas, R represents a hydrogen atom; Vf01 represents an alkylene group or a halogenated alkylene group; Yf01 represents —CO—O— or —O—CO—; Rf01 represents an organic group containing a fluorine atom; Vf02 represents a divalent hydrocarbon group; Rf02 represents an acid dissociable group represented by General Formula (f02-r1-1); Rf021, Rf022, Rf023, Rf024, and Rf025 represent a hydrocarbon group; and Yf02 represents a quaternary carbon atom A resist composition containing a resin component that exhibits changed solubility in a developing solution under action of an acid, a photodecomposable base, and a fluorine additive component. The fluorine additive component includes a polymeric compound having a constitutional unit represented by General Formula (f01-1) and a constitutional unit represented by General Formula (f02-1). In the formulas, R represents a hydrogen atom; Vf01 represents an alkylene group or a halogenated alkylene group; Yf01 represents —CO—O— or —O—CO—; Rf01 represents an organic group containing a fluorine atom; Vf02 represents a divalent hydrocarbon group; Rf02 represents an acid dissociable group represented by General Formula (f02-r1-1); Rf021, Rf022, Rf023, Rf024, and Rf025 represent a hydrocarbon group; and Yf02 represents a quaternary carbon atom

IPC Classes  ?

  • C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/004 - Photosensitive materials
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/16 - Coating processesApparatus therefor

72.

CURABLE COMPOSITION FOR FORMING LOW REFRACTIVE INDEX FILM, LOW REFRACTIVE INDEX FILM, OPTICAL DEVICE, AND METHOD FOR PRODUCING LOW REFRACTIVE INDEX FILM

      
Application Number 18795579
Status Pending
Filing Date 2024-08-06
First Publication Date 2025-02-13
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Aoyama, Yohei
  • Konno, Kenri
  • Mori, Risako

Abstract

To provide a curable composition for forming a low refractive index film of which a cured film excellent in heat resistance can be formed. A curable composition for forming a low refractive index film containing a hollow filler (A), a polymerizable compound (B), and a polymerization initiator (C), and not containing an alkali-soluble resin. The polymerizable compound (B) includes a compound (B1) having 5 or more polymerizable functional groups and a compound (B2) having 1 or more and 3 or less polymerizable functional groups. A ratio (B1/B2) of a mass of the compound (B1) to a mass of the compound (B2) is 0.25 or more and 3 or less.

IPC Classes  ?

73.

PHOTOCURABLE COMPOSITION AND PATTERN FORMING METHOD

      
Application Number 18712891
Status Pending
Filing Date 2022-12-12
First Publication Date 2025-02-06
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Mizusawa, Ryuma

Abstract

A photocurable composition including an acrylic resin, an epoxy group-containing compound (excluding a component corresponding to the acrylic resin), and a cationic polymerization initiator. The acrylic resin has a glass transition point of 0° C. or lower. In such a photocurable composition, a cured film obtained by curing the photocurable composition has an elastic modulus of 2.0×106 [Pa] or greater and 1.0×109 [Pa] or less at a temperature of 80° C. when the viscoelasticity of the cured film is measured at a frequency of 1 Hz.

IPC Classes  ?

  • C08L 63/00 - Compositions of epoxy resinsCompositions of derivatives of epoxy resins
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

74.

METHOD FOR PRODUCING METATUNGSTATE COMPOUND, METATUNGSTATE COMPOUND FOR RESISTS, AND RESIST MATERIAL

      
Application Number JP2024027411
Publication Number 2025/028579
Status In Force
Filing Date 2024-07-31
Publication Date 2025-02-06
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Noda, Kunihiro
  • Inari, Takatoshi
  • Nishizawa, Akito
  • Nagata, Masaya

Abstract

The present invention provides: a method for selectively producing a metatungstate compound which contains five onium cations or onium dications by performing a salt exchange reaction of a metatungstate in an acidic solution that has a pH of less than 3; a novel metatungstate compound for resists, the metatungstate compound being produced by the production method; and a resist material which contains the metatungstate compound for resists.

IPC Classes  ?

  • C07C 381/12 - Sulfonium compounds
  • C07F 11/00 - Compounds containing elements of Groups 6 or 16 of the Periodic Table
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

75.

Container for cell observation

      
Application Number 29864444
Grant Number D1060724
Status In Force
Filing Date 2022-05-27
First Publication Date 2025-02-04
Grant Date 2025-02-04
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Ohsaka, Takashi

76.

RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number 18713393
Status Pending
Filing Date 2022-12-05
First Publication Date 2025-01-30
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Hirano, Tomoyuki
  • Sunamichi, Tomonari
  • Hashimoto, Haruna
  • Nakagawa, Yusuke

Abstract

A resist composition including a polymer compound having a constitutional unit represented by General Formula (a10-1) below, an onium salt-based acid generator, a crosslinking agent, and a polynuclear phenol low-molecular-weight compound containing 5 or less phenyl groups, in which the resist composition has a solid content concentration of 15% by mass or greater. In the formula, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Yax1 represents a single bond or a divalent linking group; Wax1 represents an aromatic hydrocarbon group which may have a substituent; and nax1 represents an integer of 1 or greater A resist composition including a polymer compound having a constitutional unit represented by General Formula (a10-1) below, an onium salt-based acid generator, a crosslinking agent, and a polynuclear phenol low-molecular-weight compound containing 5 or less phenyl groups, in which the resist composition has a solid content concentration of 15% by mass or greater. In the formula, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Yax1 represents a single bond or a divalent linking group; Wax1 represents an aromatic hydrocarbon group which may have a substituent; and nax1 represents an integer of 1 or greater

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

77.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND

      
Application Number JP2024024271
Publication Number 2025/018169
Status In Force
Filing Date 2024-07-04
Publication Date 2025-01-23
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Matsushita Tetsuya

Abstract

The present invention uses a resist composition that contains a base material component that has a structural unit derived from a compound represented by general formula (a0-1). In formula (a0-1), W01represents a polymerizable group–containing group, La01represents a divalent linking group or a single bond, and I represents an iodine atom. Ra02represents a substituent other than an iodine atom. Ya01represents a divalent linking group or a single bond. Va01represents a single bond, an alkylene group, or a fluorinated alkylene group. Ra01represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group. Mm+ is an m-valent cation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 333/76 - Dibenzothiophenes
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/22 - Esters containing halogen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

78.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND

      
Application Number JP2024024656
Publication Number 2025/018212
Status In Force
Filing Date 2024-07-08
Publication Date 2025-01-23
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Ishii Shuichi

Abstract

The present invention employs a resist composition comprising a resin component that has a structural unit derived from a compound represented by general formula (a0-m0). In the general formula, W0represents a polymerizable-group-containing group. Rar1represents an aromatic group that may have a substituent. L01represents a divalent linking group or a single bond. Vb0represents an alkylene group, a fluorinated alkylene group, or a single bond. R0represents a fluorinated alkyl group, a fluorine atom, or a hydrogen atom. L02represents a (p+1)-valent linking group or a single bond. p represents an integer of 1 or more. However, when L02represents a single bond, p is 1. Rar2represents an aromatic group that may have a substituent. q represents an integer of 1 or more. Mm+ represents an m-valent onium cation. m represents an integer of 1 or more. With this resist composition, it is possible to enhance the effects of both a decrease in roughness and suppression of film loss during resist pattern formation.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • C07C 381/12 - Sulfonium compounds
  • C07D 333/76 - Dibenzothiophenes
  • C08F 12/22 - Oxygen
  • C08F 20/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

79.

PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR PRODUCING LAMINATE

      
Application Number JP2024023755
Publication Number 2025/013676
Status In Force
Filing Date 2024-07-01
Publication Date 2025-01-16
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Saito Yohei
  • Yamagata Kenichi

Abstract

The present invention provides a photosensitive resin composition containing a hydrogenated bisphenol A type epoxy resin (A1) having an epoxy equivalent weight of 600 or more, and a photoacid generator (B1) represented by general formula (b-1). In the formula, Rb1to Rb3each independently represent an aryl group, a heteroaryl group, an alkyl group, or an alkenyl group, optionally having a substituent. Rb1to Rb3do not include condensed rings. Rb4to Rb7 each independently represent an aryl group optionally having a substituent, or a fluorine atom.

IPC Classes  ?

  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • C08G 59/24 - Di-epoxy compounds carbocyclic
  • C08G 59/68 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the catalysts used
  • G03F 7/004 - Photosensitive materials
  • G03F 7/20 - ExposureApparatus therefor

80.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND POLYMER COMPOUND

      
Application Number JP2024023773
Publication Number 2025/009502
Status In Force
Filing Date 2024-07-01
Publication Date 2025-01-09
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Onishi Koshi
  • Nagamine Takashi
  • Fujimoto Yuuki

Abstract

Provided are a resist composition, a method for forming a resist pattern, and a polymer compound. The resist composition contains a resin component (A1) having a structural unit (a0) represented by general formula (a0-0). In formula, R01and R02a0a0a0 is 1, La01a0a0 is 2 or more, La01a0a0+1)-valent linking group. La02is a single bond or a divalent linking group. Mm+ is an m-valent onium cation. m is an integer of 1 or more.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 22/40 - Imides, e.g. cyclic imides
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

81.

METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE, AND COMPOSITION

      
Application Number 18437759
Status Pending
Filing Date 2024-02-09
First Publication Date 2025-01-09
Owner
  • TOKYO OHKA KOGYO CO., LTD. (Japan)
  • TOKYO INSTITUTE OF TECHNOLOGY (Japan)
Inventor
  • Uehara, Takuya
  • Dazai, Takahiro
  • Hayakawa, Teruaki
  • Maekawa, Shinsuke
  • Mizusaki, Riku

Abstract

A method for producing a structure body including a phase-separated, the method including (i) applying a composition containing a block copolymer represented by Formula (n1) onto a substrate to form an undercoat agent layer, (ii) applying the composition containing the block copolymer onto the undercoat agent layer to form a self-organization layer, and (iii) subjecting the self-organization layer to phase separation. In General Formula (n1), A represents a first polymer block, B represents a second polymer block, R1c and R1d represent a substrate adsorptive group-containing group, R2c and R2d represent a substituent other than the substrate adsorptive group-containing group, m1 and n1 represent an integer of 0 to 5, m2 and n2 represent an integer of 0 to 5, m1+n1 >1, m1+m2<5, and n1+n2<5 A method for producing a structure body including a phase-separated, the method including (i) applying a composition containing a block copolymer represented by Formula (n1) onto a substrate to form an undercoat agent layer, (ii) applying the composition containing the block copolymer onto the undercoat agent layer to form a self-organization layer, and (iii) subjecting the self-organization layer to phase separation. In General Formula (n1), A represents a first polymer block, B represents a second polymer block, R1c and R1d represent a substrate adsorptive group-containing group, R2c and R2d represent a substituent other than the substrate adsorptive group-containing group, m1 and n1 represent an integer of 0 to 5, m2 and n2 represent an integer of 0 to 5, m1+n1 >1, m1+m2<5, and n1+n2<5

IPC Classes  ?

  • C09D 153/00 - Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers
  • C08J 7/04 - Coating
  • C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers

82.

BLOCK COPOLYMER, UNDERCOAT AGENT, RESIN COMPOSITION FOR FORMING PHASE-SEPARATED STRUCTURE, AND METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE

      
Application Number 18438090
Status Pending
Filing Date 2024-02-09
First Publication Date 2025-01-09
Owner
  • TOKYO OHKA KOGYO CO., LTD. (Japan)
  • TOKYO INSTITUTE OF TECHNOLOGY (Japan)
Inventor
  • Uehara, Takuya
  • Dazai, Takahiro
  • Hayakawa, Teruaki
  • Maekawa, Shinsuke
  • Mizusaki, Riku

Abstract

A block copolymer represented by General Formula (n1) in which A represents a first polymer block, B represents a second polymer block, R1c and R1d each independently represents a substrate adsorptive group-containing group, R2c and R2d each independently represents a substituent other than the substrate adsorptive group-containing group, m1 and n1 each independently represents an integer of 0 to 5, m2 and n2 each independently represents an integer of 0 to 5, m1+n1≥1, m1+m2≤5, and n1+n2≤5 A block copolymer represented by General Formula (n1) in which A represents a first polymer block, B represents a second polymer block, R1c and R1d each independently represents a substrate adsorptive group-containing group, R2c and R2d each independently represents a substituent other than the substrate adsorptive group-containing group, m1 and n1 each independently represents an integer of 0 to 5, m2 and n2 each independently represents an integer of 0 to 5, m1+n1≥1, m1+m2≤5, and n1+n2≤5

IPC Classes  ?

  • C09D 183/10 - Block or graft copolymers containing polysiloxane sequences
  • C08G 81/02 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
  • C09D 5/20 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects producedFilling pastes for coatings strippable as coherent films, e.g. temporary coatings strippable as coherent films

83.

RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND ACID GENERATOR

      
Application Number 18691733
Status Pending
Filing Date 2022-09-20
First Publication Date 2025-01-09
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Uehara, Takuya
  • Nguyen, Khanhtin
  • Ikeda, Takuya

Abstract

A resist composition including a base material component and a compound represented by General Formula (b0), in which Rb0 represents a fused cyclic group in which an aromatic ring and an alicyclic ring are fused, the alicyclic ring in the fused cyclic group has substituents, at least one of the substituents contains a hydrocarbon group having a bromine atom or an iodine atom, Yb0 represents a divalent linking group or a single bond, Yb0 is bonded to the alicyclic ring in the fused cyclic group, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a fluorinated alkyl group having 1 to 5 carbon atoms or a fluorine atom, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater A resist composition including a base material component and a compound represented by General Formula (b0), in which Rb0 represents a fused cyclic group in which an aromatic ring and an alicyclic ring are fused, the alicyclic ring in the fused cyclic group has substituents, at least one of the substituents contains a hydrocarbon group having a bromine atom or an iodine atom, Yb0 represents a divalent linking group or a single bond, Yb0 is bonded to the alicyclic ring in the fused cyclic group, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a fluorinated alkyl group having 1 to 5 carbon atoms or a fluorine atom, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
  • G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/30 - Imagewise removal using liquid means

84.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND

      
Application Number JP2024022453
Publication Number 2025/004967
Status In Force
Filing Date 2024-06-20
Publication Date 2025-01-02
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Ebina Masanori
  • Kato Hiroki

Abstract

This resist composition generates an acid via exposure to light, and the solubility thereof with respect to a developer is changed by the action of the acid. The resist composition contains a resin component (A1) whose solubility with respect to the developer is changed by the action of the acid. The resin component (A1) includes a structural unit (a0) represented by general formula (a0). R represents a hydrogen atom, a 1-5C alkyl group, or a 1-5C halogenated alkyl group; L01and L03each independently represent a single bond or a divalent linking group; L02represents -COO- or -CONH-; Ar01and Ar02each independently represent an arylene group which may have a substituent; and Rpg0 represents an acid-dissociable group.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 12/02 - Monomers containing only one unsaturated aliphatic radical
  • G03F 7/20 - ExposureApparatus therefor

85.

RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number JP2024023379
Publication Number 2025/005192
Status In Force
Filing Date 2024-06-27
Publication Date 2025-01-02
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Fujii Tatsuya

Abstract

Disclosed is a resist composition which contains a resin component (A1) that has a constituent unit (a0) derived from a compound represented by general formula (a0-1), and a fluororesin component (F1) that has a constituent unit (f1) containing a base dissociable group. (In the formula, W01represents a polymerizable group-containing group; La01and La02each independently represent a single bond or a divalent linking group; Ar01represents an aromatic hydrocarbon group; Ya01represents a divalent linking group or a single bond; Va01represents a single bond, an alkylene group or a fluorinated alkylene group; Ra01represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group having 1 to 5 carbon atoms; and Mm+ represents an m-valent cation).

IPC Classes  ?

86.

RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND POLYMER COMPOUND

      
Application Number JP2024021222
Publication Number 2025/004794
Status In Force
Filing Date 2024-06-11
Publication Date 2025-01-02
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Onishi Koshi
  • Nagamine Takashi

Abstract

Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The resist composition contains a resin component (A1) which has a constituent unit (a0) represented by formula (a0). A0represents an oxygen atom or a sulfur atom; Y0represents a single bond or an (n01 + 1)-valent linking group; L01represents a single bond or a divalent linking group; R01represents a hydrogen atom or a group represented by formula (r01-1) or (r01-2); V01and V02each represent a single bond or a methylene group; n01 represents an integer of 1 or more; Mm+represents an m-valent cation; Y02represents a single bond or an (n02 + 1)-valent linking group; L02represents a single bond or a divalent linking group; n02 represents an integer of 1 or more; Y03represents a single bond or a divalent linking group; and R03 represents a hydrocarbon group.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07C 69/94 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of polycyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of six-membered aromatic rings
  • C07C 69/734 - Ethers
  • C07C 381/12 - Sulfonium compounds
  • C07D 333/76 - Dibenzothiophenes
  • C08F 220/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

87.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND POLYMER

      
Application Number JP2024022816
Publication Number 2025/005042
Status In Force
Filing Date 2024-06-24
Publication Date 2025-01-02
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Ebina Masanori
  • Ishii Shuichi

Abstract

A resist composition containing a resin component (A1) including a constituent unit (a0) represented by general formula (a0) (wherein R represents a hydrogen atom, etc.; X0represents a hydrogen atom or an alkyl group; Ar01represents an optionally substituted arylene group; La01represents a single bond or a divalent linking group; and Rpg0 represents an acid-dissociable group).

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C08F 220/56 - AcrylamideMethacrylamide
  • G03F 7/20 - ExposureApparatus therefor

88.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMER COMPOUND, AND COMPOUND

      
Application Number JP2024022901
Publication Number 2025/005060
Status In Force
Filing Date 2024-06-24
Publication Date 2025-01-02
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Fujimoto Yuuki

Abstract

This resist composition contains a resin component (A1) of which the solubility with respect to a developer changes by the action of an acid. The resin component (A1) includes a structural unit (a0) induced from a compound represented by general formula (a0-1) (in the formula, I represents an iodine atom, L0 represents a single bond or a divalent linkage group, and Rpg represents an acid-dissociable group).

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07C 69/65 - Halogen-containing esters of unsaturated acids
  • C07C 69/73 - Esters of carboxylic acids having esterified carboxyl groups bound to acyclic carbon atoms and having any of the groups OH, O-metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
  • C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
  • C07D 307/20 - Oxygen atoms
  • C07D 409/06 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing only aliphatic carbon atoms
  • C08F 20/10 - Esters
  • G03F 7/20 - ExposureApparatus therefor

89.

METHOD FOR PRODUCING ACID GENERATOR

      
Application Number 18697720
Status Pending
Filing Date 2022-10-20
First Publication Date 2024-12-26
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Odashima, Rin
  • Kato, Hiroki

Abstract

A method for producing an acid generator including reacting a carboxylic acid represented by Formula (d0-1) having a pKa of 0.50 or more with at least one of a nitrogen-containing base compound and an onium compound to obtain an intermediate represented by Formula (d0-p), and subjecting the intermediate (d0-p) to an ion exchange reaction with a compound represented by Formula (c0) to obtain a compound represented by Formula (d0). In the formulae, X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, nb1 represents an integer in a range of 1 to 5, 1≤nb1+nb2≤5 is satisfied, Yd represents a divalent linking group or a single bond, Mpm′+ represents an organic ammonium cation having a logPOW of 4.8 or less or an onium cation having a logPOW of 4.8 or less, X− represents a counter anion, and Mm+ represents an onium cation. A method for producing an acid generator including reacting a carboxylic acid represented by Formula (d0-1) having a pKa of 0.50 or more with at least one of a nitrogen-containing base compound and an onium compound to obtain an intermediate represented by Formula (d0-p), and subjecting the intermediate (d0-p) to an ion exchange reaction with a compound represented by Formula (c0) to obtain a compound represented by Formula (d0). In the formulae, X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, nb1 represents an integer in a range of 1 to 5, 1≤nb1+nb2≤5 is satisfied, Yd represents a divalent linking group or a single bond, Mpm′+ represents an organic ammonium cation having a logPOW of 4.8 or less or an onium cation having a logPOW of 4.8 or less, X− represents a counter anion, and Mm+ represents an onium cation.

IPC Classes  ?

  • C07C 51/41 - Preparation of salts of carboxylic acids by conversion of the acids or their salts into salts with the same carboxylic acid part
  • G03F 7/004 - Photosensitive materials

90.

RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

      
Application Number 18700987
Status Pending
Filing Date 2022-11-01
First Publication Date 2024-12-26
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Someya, Yasuo
  • Kaiho, Takaaki

Abstract

A resist composition containing a base component, an acid generator component, and an acid diffusion-controlling agent. The acid generator component includes a compound having a molar absorption coefficient of 50,000 mol−1·L·cm−1 or less at an exposure wavelength of 193 nm, and the acid diffusion-controlling agent includes a compound represented by General Formula (d0), in which Rd01 represents a cyclic group or a chain alkenyl group which may have a substituent, Yd01 represents a divalent linking group containing an oxygen atom, m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation A resist composition containing a base component, an acid generator component, and an acid diffusion-controlling agent. The acid generator component includes a compound having a molar absorption coefficient of 50,000 mol−1·L·cm−1 or less at an exposure wavelength of 193 nm, and the acid diffusion-controlling agent includes a compound represented by General Formula (d0), in which Rd01 represents a cyclic group or a chain alkenyl group which may have a substituent, Yd01 represents a divalent linking group containing an oxygen atom, m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation Rd01-Yd01-CH2—SO3⊖(Mm⊕)1/m  (d0)

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

91.

RESIN COMPOSITION FOR FORMING PHASE-SEPARATED STRUCTURE, AND METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE

      
Application Number 18692782
Status Pending
Filing Date 2022-09-20
First Publication Date 2024-12-26
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Miyagi, Ken
  • Dazai, Takahiro
  • Tsuchiya, Junichi

Abstract

A resin composition for forming a phase-separated structure, the resin composition containing a first block copolymer having a first a block and a first b block, a second block copolymer having a second a block and a second b block, a homopolymer A compatible with the first a block and the second a block, and a homopolymer B compatible with the first b block and the second b block, in which a constitutional unit constituting the first a block and a constitutional unit constituting the second a block are the same, a constitutional unit constituting the first b block and a constitutional unit constituting the second b block are the same, and a number-average molecular weight of the second block copolymer is larger than a number-average molecular weight of the first block copolymer.

IPC Classes  ?

  • C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers

92.

CLEANING SOLUTION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR

      
Application Number 18747824
Status Pending
Filing Date 2024-06-19
First Publication Date 2024-12-26
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Seki, Kenji
  • Iioka, Jun

Abstract

There are provided a cleaning solution, including: an oxoacid having an acid dissociation constant pka of less than 5.0 and a valence of two or more, in which a value of pH of the cleaning solution is smaller than the acid dissociation constant; a method for cleaning a semiconductor substrate using the same; and a method for manufacturing a semiconductor.

IPC Classes  ?

93.

PROCESSING SOLUTION FOR SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

      
Application Number 18680569
Status Pending
Filing Date 2024-05-31
First Publication Date 2024-12-19
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Kimura, Kenta

Abstract

A processing solution for a semiconductor device including a fluorine-containing compound, water, a cyclic ether compound, and a water-soluble organic solvent that is not the cyclic ether compound; a method for processing a substrate; and a method for manufacturing a semiconductor device.

IPC Classes  ?

  • C11D 3/20 - Organic compounds containing oxygen
  • C11D 3/04 - Water-soluble compounds
  • C11D 3/43 - Solvents
  • H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
  • H01L 21/3065 - Plasma etchingReactive-ion etching
  • H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks

94.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COPOLYMER

      
Application Number JP2024016905
Publication Number 2024/257503
Status In Force
Filing Date 2024-05-02
Publication Date 2024-12-19
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Nguyen Khanhtin
  • Fujino Akiya

Abstract

The present invention employs a resist composition which contains a resin component that has a constituent unit derived from a compound represented by general formula (a01-b) and a constituent unit derived from a compound represented by general formula (a02-d). In the formulae, W01and W02each represent a group containing a polymerizable group. X01and X02each represent a divalent linking group or a single bond. R0represents a fluorinated alkyl group having 1 to 5 carbon atoms, a fluorine atom, or a hydrogen atom. Mm+represents an m-valent onium cation. Nn+represents an n-valent onium cation. Meanwhile, an iodine atom is contained in any one or more of X01, X02, Mm+, and Nn+. This resist composition makes it possible to enhance the sensitivity during the formation of a resist pattern, and to achieve improvement of the lithography characteristics such as reduction in roughness of a pattern, and also makes it possible to increase the process margin.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
  • C08F 220/38 - Esters containing sulfur
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

95.

RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND

      
Application Number JP2024019017
Publication Number 2024/252943
Status In Force
Filing Date 2024-05-23
Publication Date 2024-12-12
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor Fujimoto Yuuki

Abstract

Disclosed is a resist composition which generates an acid when exposed to light, and the solubility of which with respect to a developer solution is changed by the action of the acid. The resist composition contains a resin component (A1), the solubility of which with respect to a developer solution is changed by the action of an acid, and the resin component (A1) comprises a constituent unit (a0) that is represented by general formula (a0-1). In the formula, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; L0represents a single bond or a divalent linking group; X0represents an oxygen atom, a sulfur atom, or a group represented by -N(Rx0)-; Rx0represents an alkyl group having 1 to 3 carbon atoms; Rpg represents an acid dissociable group; R0 represents a substituent; and n0 represents an integer of 0 to 4.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • C07D 209/42 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
  • C07D 307/79 - Benzo [b] furansHydrogenated benzo [b] furans with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
  • C07D 307/83 - Oxygen atoms
  • C07D 307/84 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen
  • C07D 307/85 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
  • C07D 307/86 - Benzo [b] furansHydrogenated benzo [b] furans with an oxygen atom directly attached in position 7
  • C07D 333/70 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
  • C07D 409/14 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing three or more hetero rings
  • C08F 20/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety

96.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER COMPOUND, AND COMPOUND

      
Application Number 18694868
Status Pending
Filing Date 2022-10-06
First Publication Date 2024-12-12
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Kato, Hiroki
  • Ishii, Shuichi
  • Fujinami, Tetsuo

Abstract

A resist composition which generates an acid upon exposure to light and whose solubility in a developing solution is changed under action of an acid, the resist composition containing a resin component whose solubility in a developing solution is changed under action of an acid, in which the resin component has a constitutional unit derived from a compound represented by General Formula (a0) in which W represents a polymerizable group, Ar represents an aromatic hydrocarbon group, —OH represents a hydroxy group, La0 represents a divalent linking group, Ya0 represents a single bond or a divalent linking group, Ra01 and Ra02 each independently represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group, n0 represents an integer in a range of 1 to 4, m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation.

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F 7/20 - ExposureApparatus therefor

97.

TREATMENT LIQUID

      
Application Number 18732471
Status Pending
Filing Date 2024-06-03
First Publication Date 2024-12-12
Owner Tokyo Ohka Kogyo Co., Ltd. (Japan)
Inventor Eto, Takahiro

Abstract

A treatment liquid containing a fluorine-containing compound, an organic solvent, a basic compound represented by General Formula NR1R2R3, and water, in which a content of the organic solvent is 65% by mass or more with respect to a total amount of the treatment liquid, and a pH is 6 to 9. In the formula, R1 to R3 are each independently a hydrogen atom or a hydrocarbon group which may have a substituent.

IPC Classes  ?

  • C09K 13/06 - Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
  • C09K 13/08 - Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

98.

RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD

      
Application Number JP2024020750
Publication Number 2024/253168
Status In Force
Filing Date 2024-06-06
Publication Date 2024-12-12
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Murata Mari
  • Fujii Tatsuya
  • Inaba Yushi

Abstract

This resist composition contains: a base material component (A); an acid generating agent component (B) including a compound (B0) represented by formula (b0); and a fluorine additive component (F) having a structural unit (f0) represented by formula (f0). Rpg represents an acid decomposable group, Rl01and Rl02each represent a cyclic hydrocarbon group, L01represents a divalent linkage group or a single bond, L02and L03each represent a divalent linkage group, Rm1represents a substituent other than an iodine atom, Vb0represents an alkylene group, a fluorinated alkylene group, or the like, R0represents a fluorinated alkyl group, a fluorine atom, or the like, nb1 represents an integer of 1-4, nb2 represents 1-4, nb3 represents an integer of 0-3, mb1 and mb2 each represent 0 or 1, Mm+ represents an m-valent organic cation, R represents an alkyl group, a halogenated alkyl group, or the like, X0represents a divalent linkage group not having an acid dissociable site, and Rf0 represents an organic group having a fluorine atom.

IPC Classes  ?

  • G03F 7/004 - Photosensitive materials
  • C07D 317/22 - Radicals substituted by singly bound oxygen or sulfur atoms etherified
  • C07D 333/76 - Dibenzothiophenes
  • C08F 20/26 - Esters containing oxygen in addition to the carboxy oxygen
  • G03F 7/20 - ExposureApparatus therefor
  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

99.

RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, COMPOUND, AND ACID DIFFUSION CONTROL AGENT

      
Application Number 18699225
Status Pending
Filing Date 2022-10-18
First Publication Date 2024-12-05
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Odashima, Rin
  • Kato, Hiroki

Abstract

A resist composition containing a resin component (A1) and a photodecomposable base (D0) represented by General Formula (d0) that generates a carboxylic acid having a pKa of 0.50 or more as a generated acid. In the formula, Rm represents a hydrogen atom or a hydroxy group, X0 represents a bromine atom or an iodine atom, Yd0 represents a divalent linking group or a single bond, Rb1 represents a fluorine atom or a fluorinated alkyl group, p01 represents an integer in a range of 1 to 5, and Rb2 and Rb3 are hydrocarbon groups, provided that at least one Rb1 is bonded to an ortho-position or a meta-position of a benzene ring, and the number of all fluorine atoms contained in —F and/or —CFRx1Rx2 bonded to an aromatic ring bonded to the sulfur atom in the formula is 3 or more, and Rx1 and Rx2 represent a fluorine atom or a hydrogen atom A resist composition containing a resin component (A1) and a photodecomposable base (D0) represented by General Formula (d0) that generates a carboxylic acid having a pKa of 0.50 or more as a generated acid. In the formula, Rm represents a hydrogen atom or a hydroxy group, X0 represents a bromine atom or an iodine atom, Yd0 represents a divalent linking group or a single bond, Rb1 represents a fluorine atom or a fluorinated alkyl group, p01 represents an integer in a range of 1 to 5, and Rb2 and Rb3 are hydrocarbon groups, provided that at least one Rb1 is bonded to an ortho-position or a meta-position of a benzene ring, and the number of all fluorine atoms contained in —F and/or —CFRx1Rx2 bonded to an aromatic ring bonded to the sulfur atom in the formula is 3 or more, and Rx1 and Rx2 represent a fluorine atom or a hydrogen atom

IPC Classes  ?

  • G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F 7/004 - Photosensitive materials
  • G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

100.

COMPOSITION AND PHOTOSENSITIVE COMPOSITION

      
Application Number 18694193
Status Pending
Filing Date 2022-08-18
First Publication Date 2024-12-05
Owner TOKYO OHKA KOGYO CO., LTD. (Japan)
Inventor
  • Sugawara, Ryutaro
  • Asaba, Takuro

Abstract

A photosensitive composition which tends to hardly occur excessive decrease of weight of a component (in which is a component other than a solvent, when the composition or the photosensitive composition includes the solvent) in the composition or the photosensitive composition by heating, and includes inorganic microparticles in a stably dispersed state, a cured product of the photosensitive composition, a compound which can be preferably added to the composition and the photosensitive composition, and a production method of the compound are provided. In a composition including a photopolymerizable compound (A) and inorganic microparticles (B) or a photosensitive composition including a photopolymerizable compound (A), inorganic microparticles (B), and an initiator, a compound with a specific structure having a radically polymerizable group-containing group or a cationically polymerizable group-containing group is used as the photopolymerizable compound (A).

IPC Classes  ?

  • G03F 7/028 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
  • C07C 69/54 - Acrylic acid estersMethacrylic acid esters
  • C07D 217/02 - Heterocyclic compounds containing isoquinoline or hydrogenated isoquinoline ring systems with only hydrogen atoms or radicals containing only carbon and hydrogen atoms, directly attached to carbon atoms of the nitrogen-containing ringAlkylene-bis-isoquinolines
  • C07D 277/74 - Sulfur atoms substituted by carbon atoms
  • C08K 3/22 - OxidesHydroxides of metals
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