A method for producing a structure having a phase-separated structure that can improve misalignment of a cylinder structure or line roughness and form alignment marks well. The method includes forming a layer including a block copolymer and having a thickness t on a substrate using a resin composition containing the block copolymer, and separating the layer into a cylinder structure. The thickness t is set such that a relationship between the thickness t and a period L0 of the block copolymer satisfies a specific formula.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
Provided are a negative photosensitive composition capable of forming a pattern having a good shape and capable of enhancing adhesion to a side wall of a hollow structure, a photosensitive resist film having a photosensitive film formed by using the negative photosensitive composition, and a method for manufacturing a hollow structure and pattern forming method that use the negative photosensitive composition. The negative photosensitive composition contains a trifunctional or higher polyfunctional epoxy compound, a cationic polymerization initiator, and a bifunctional aromatic epoxy compound having a molecular weight of 800 or less. In this negative photosensitive composition, the proportion of the content of the bifunctional aromatic epoxy compound is 0.6–10% by mass with respect to the total content (100% by mass) of the polyfunctional epoxy compound and the bifunctional aromatic epoxy compound.
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
C08G 59/02 - Polycondensates containing more than one epoxy group per molecule
C08G 59/08 - Polycondensates containing more than one epoxy group per molecule of polyhydroxy compounds with epihalohydrins or precursors thereof of polyhydric phenols from phenol-aldehyde condensates
C08G 59/68 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the catalysts used
WATER-REPELLING AGENT FOR ELECTROCONDUCTIVE ARTICLE SURFACE, WATER-REPELLENCY-IMPARTING METHOD FOR ELECTROCONDUCTIVE ARTICLE SURFACE, METHOD FOR SELECTIVELY IMPARTING WATER REPELLENCY FOR REGION HAVING ELECTROCONDUCTIVE ARTICLE SURFACE, SURFACE TREATMENT METHOD, AND METHOD FOR FORMING FILM ON SELECTED REGION OF SUBSTRATE SURFACE
A water-repelling agent for an electroconductive article surface, including a compound that contains an aromatic ring, an adsorption group which is bonded to the aromatic ring and is an amino group, a phosphonic acid group, an acid anhydride group, a thiol group, or an acid chloride group, and a linear or branched alkyl group or a linear or branched fluorinated alkyl group bonded to the aromatic ring
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
4.
METHOD FOR PRODUCING POLYACID SALTS OR MIXTURES THEREOF, AND METHOD FOR REMOVING IMPURITIES
The present invention provides a method for producing polyacid salts or mixtures thereof, wherein impurities can effectively be removed without decomposing polyacid anions, which are the anion portions of the polyacid salts or mixtures thereof, by washing polyacid salts having prescribed counter cations or mixtures of the polyacid salts with an acidic aqueous solution having a pH of 6 or less.
The present invention employs a cleaning liquid containing a solvent and a metal remover. In the cleaning liquid, two or more solvents are included, the distance (HSP distance) between the Hansen solubility parameter of the cleaning liquid and the Hansen solubility parameter of dimethylacetamide is 1.0 or less, and the content of metal impurities is 0.1 × 10-9parts by mass or more and 102× 10-6 parts by mass or less with respect to 100 parts by mass of the total of the solvent and the metal remover. This cleaning liquid improves impurity removal.
The present invention employs a cleaning liquid containing a solvent and a metal remover. In the cleaning liquid, two or more solvents are included, the distance (HSP distance) between the Hansen solubility parameter of the cleaning liquid and the Hansen solubility parameter of dimethylacetamide is 1.0 or less, and the total content of an organic substance selected from the group consisting of organic acid multimers, organic acid esters, and ketone bodies is 0.1 × 10-9parts by mass or more and 105× 10-6 parts by mass or less with respect to 100 parts by mass of the total of the solvent and the metal remover. This cleaning liquid improves removal of organic impurities.
The present invention provides: a novel heteropolyoxometalate having a modified lacunary site, obtained by modifying the lacunary site of a heteropoly anion having a lacunary site and by introducing an organic sulfonium cation, an organic sulfonium dication, or an organic iodonium cation as a counter cation of the heteropoly anion having the modified lacunary site; or a mixture thereof.
C07D 333/46 - Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
C07D 333/54 - Benzo [b] thiophenesHydrogenated benzo [b] thiophenes with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
The present invention provides a novel method for producing a heteropolyoxometalate having a modified lacunary site, or a mixture thereof, the method comprising: a step for using a Keggin-type or Dawson-type heteropolyoxometalate as a mono-lacunary Keggin-type or Dawson-type heteropolyoxometalate; and a step for obtaining a heteropolyoxometalate having a modifiect lacunary site by reacting the mono-lacunary Keggin-type or Dawson-type heteropolyoxometalate with a P, Si, Ge, or Sn compound having one or more hydro groups or an organic group and two or more leaving groups.
The present invention provides: a novel heteropolyoxometalate having a modified lacunary site, obtained by modifying the lacunary site of a heteropoly anion having a lacunary site, using a metal ion, an ammonium cation, an ammonium dication, a phosphonium cation, or a phosphonium dication as a counter cation of the heteropoly anion; or a mixture thereof.
C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
C07C 211/08 - Monoamines containing alkyl groups having a different number of carbon atoms
C07C 215/40 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton with quaternised nitrogen atoms bound to carbon atoms of the carbon skeleton
C07C 219/08 - Compounds containing amino and esterified hydroxy groups bound to the same carbon skeleton having esterified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having at least one of the hydroxy groups esterified by a carboxylic acid having the esterifying carboxyl group bound to an acyclic carbon atom of an acyclic unsaturated carbon skeleton
C07C 229/12 - Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton the nitrogen atom of the amino group being further bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings to carbon atoms of acyclic carbon skeletons
C07C 233/36 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by amino groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom having the carbon atom of the carboxamide group bound to a hydrogen atom or to a carbon atom of an acyclic saturated carbon skeleton
C07C 271/44 - Esters of carbamic acids having oxygen atoms of carbamate groups bound to carbon atoms of six-membered aromatic rings with the nitrogen atoms of the carbamate groups bound to hydrogen atoms or to acyclic carbon atoms to hydrogen atoms or to carbon atoms of unsubstituted hydrocarbon radicals
The purpose of the present invention is to provide a novel polyacid salt or a mixture thereof by introducing, into a cation part of a polyacid salt, an organic quaternary ammonium cation, an organic quaternary ammonium dication, or a pyridinium cation, each of which having two or more ethylenically unsaturated double bonds.
C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
C07C 215/40 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton with quaternised nitrogen atoms bound to carbon atoms of the carbon skeleton
C07C 233/36 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by amino groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom having the carbon atom of the carboxamide group bound to a hydrogen atom or to a carbon atom of an acyclic saturated carbon skeleton
A photosensitive composition including a radically polymerizable compound (A), and a radical polymerization initiator (C), which tends to hardly occur excessive decrease of weight of a cured product and a component other than a solvent in the photosensitive composition, and having good curability, and a cued product of the photosensitive composition are provided. A compound having a specific structure including a radically polymerizable group-containing group and a radically polymerizable compound other than the compound having the specific structure are used in combination as a radically polymerizable compound (A) in a photosensitive composition including the radically polymerizable compound (A) and a radical polymerization initiator (C).
G03F 7/028 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
There are provided a processing solution, including: (a) a compound capable of releasing a fluoride anion or a salt thereof; (b) a water-soluble organic solvent; (c) water; and (d) a nitrogen-containing aromatic compound, in which an anion content of the nitrogen-containing aromatic compound at 25° C. is 5 ppm or more and 30 ppm or less; a method for processing a substrate; and a method for manufacturing a semiconductor.
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
2222222 separation film; a porous film bonding step of bonding the porous film onto the coating film; and a sacrificial layer removing step of removing the sacrificial layer after the porous film bonding step. The raw material composition contains a silicon-containing resin and an organic solvent. The silicon-containing resin is a non-water-soluble resin. The silicon-containing resin has a mass average molecular weight of 2000 or more.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
B01D 71/64 - PolyimidesPolyamide-imidesPolyester-imidesPolyamide acids or similar polyimide precursors
B01D 71/70 - Polymers having silicon in the main chain, with or without sulfur, nitrogen, oxygen or carbon only
B32B 5/18 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer containing foamed or specifically porous material
B32B 37/02 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
14.
FILM-FORMING COMPOSITION, CURED FILM, PRODUCTION METHOD FOR CURED FILM, PRODUCTION METHOD FOR MULTILAYER BODY, AND CO2 SEPARATION METHOD
22 separation method using the multilayer body produced via said production method. The film-forming composition includes polydimethylsiloxane, a curing agent, and at least one hydroxamic acid or related substance selected from among hydroxamic acids and salts thereof, and the content of the hydroxamic acid or related substance is greater than 0 mass% and less than 5 mass% relative to the mass of the polydimethylsiloxane.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
22 separation film on the sacrifice layer, bonding the support base material on the film, and then removing the support body and the sacrifice layer, the sacrifice layer can be easily removed with a liquid such as water. The present invention specifically provides a method for manufacturing a multilayer body, the method including: a step for forming a sacrificial layer on a support body using a sacrificial layer forming composition; a step for forming a film on the sacrificial layer; a step for bonding a support base material on the film; a step for separating the support body after the bonding step; and a step for removing the sacrificial layer by dissolving the sacrificial layer into a liquid after the separation step. In this method for manufacturing a multilayer body, there is used a sacrificial layer forming composition which includes a resin, a polyol, and a solvent, wherein the resin has a functional group I which is one or more groups selected from the group consisting of a hydroxyl group, a cyano group, and a carboxyl group, and a functional group II which is a hydrophilic group or a hydrophobic group other than the functional group I.
B32B 7/06 - Interconnection of layers permitting easy separation
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
The present invention provides a resist composition which generates an acid upon exposure to light and changes a solubility in a developer liquid due to the action of the acid. This resist composition containing a resin component (A1) of which the solubility in a developer liquid changes due to the action of the acid, and the resin component (A1) has a constituent unit (a0) that is represented by general formula (a0-1). In formula (a0-1), L01represents a divalent linking group which contains at least one heteroatom that is selected from the group consisting of an oxygen atom, a nitrogen atom, and a sulfur atom; L02represents a divalent linking group; L03represents a single bond or the divalent linking group; R01represents a hydrocarbon group which may have a substituent; R02represents a hydrocarbon group which may have the substituent; m represents an integer of 1 or more; and Mm+ represents an m-valent cation. With such a resist composition, it is possible to form a resist pattern that has high sensitivity and reduced roughness.
C07C 233/55 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring having the carbon atom of the carboxamide group bound to a carbon atom of an unsaturated carbon skeleton
C07C 233/85 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom of an acyclic unsaturated carbon skeleton
There are provided a processing solution, including: (a) a compound capable of releasing a fluoride anion or a salt thereof; (b) a water-soluble organic solvent; (c) water; and (d) a nitrogen-containing aromatic compound, in which a mass ratio of a nonionic component of the nitrogen-containing aromatic compound to a total amount of ammonia and an ammonium ion at 35° C. is more than 0.5 and less than 1; a method for processing a substrate; and a method for manufacturing a semiconductor substrate.
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1), in which R01 represents a hydrogen atom, L01 represents a divalent linking group, Ra01 and Ra02 each independently represent a hydrocarbon group which may have a substituent, Ar01 represents an aryl group in which some or all hydrogen atoms are substituted with iodine atoms, and the aryl group may have a substituent other than the iodine atoms
A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1), in which R01 represents a hydrogen atom, L01 represents a divalent linking group, Ra01 and Ra02 each independently represent a hydrocarbon group which may have a substituent, Ar01 represents an aryl group in which some or all hydrogen atoms are substituted with iodine atoms, and the aryl group may have a substituent other than the iodine atoms
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
C07C 69/675 - Esters of carboxylic acids having esterified carboxyl groups bound to acyclic carbon atoms and having any of the groups OH, O-metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of saturated acids of saturated hydroxy-carboxylic acids
C07C 69/76 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring
C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
19.
RESIST UNDERLAYER FILM FORMATION COMPOSITION, RESIST PATTERN FORMATION METHOD, FORMATION METHOD FOR RESIST UNDERLAYER FILM PATTERN, AND PATTERN FORMATION METHOD
A composition for forming a resist underlayer film, including a furan resin, a thermal acid generator component that generates an acid by heat, and a solvent; a resist pattern formation method including forming a resist underlayer film on a substrate using the composition, forming a resist film on the resist underlayer film using the resist composition, exposing the resist film to light, and developing the resist film exposed to light to form a resist pattern; and a formation method for a resist underlayer film pattern and a pattern formation method, including the resist pattern formation method.
A photocurable composition including an acrylic resin, an epoxy group-containing compound excluding a component corresponding to the acrylic resin, and a cationic polymerization initiator. The acrylic resin has a glass transition point of 0° C. or lower and has a constitutional unit derived from an epoxy group-containing acrylic monomer. A content proportion of the constitutional unit in a total amount of all constitutional units constituting the acrylic resin is greater than 0% by mass and less than 50% by mass.
C08G 59/40 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the curing agents used
G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
G03F 7/085 - Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
21.
RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
22-containing cyclic group, or a carbonate-containing cyclic group, at least one of the constituent units (a1) being a constituent unit represented by general formula (a1-1). The acid generator component (B) contains a compound (B1) represented by general formula (b0-1). The acid diffusion control component (D) contains one or more compounds (D1) (excluding the compound (B1)) selected from the group consisting of a compound represented by general formula (d0-1) and a compound represented by general formula (d0-2).
Provided is a resist composition that generates an acid upon exposure to light, and has a varied solubility in a developer solution by the action of the acid. The resist composition contains a resin component (A1) of which solubility in a developer solution changes by the action of an acid, and the resin component (A1) has a structural unit (a0) derived from a compound represented by general formula (a0-m). W0represents a polymerizable group-containing group. Ar0represents an aromatic group which may have a substituent. Y0represents a divalent linking group. V0represents a single bond, an alkylene group, or a fluorinated alkylene group. Rf01and Rf02each independently represent a hydrogen atom, a fluorine atom or a fluorinated alkylene group. Both Rf01and Rf02cannot be hydrogen atoms. m is an integer of 1 or greater, and Mm+ is a m-valent cation.
C07C 59/135 - Saturated compounds having only one carboxyl group and containing ether groups, groups, groups, or groups containing halogen
C07C 69/90 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified hydroxyl and carboxyl groups
The present invention is a resist composition containing a resin component that has a structural unit derived from a compound represented by general formula (a0-m0). In general formula (a0-m0), W0represents a polymerizable group-containing group. Rarrepresents an aromatic group which may have a substituent. L01represents a divalent linking group or a single bond. L02represents a divalent linking group or a single bond. Z0 represents a cyclic group which may have a substituent. Rdg represents an acid-decomposable group whose polarity is increased by the action of an acid. This resist composition can increase etching resistance.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
The present invention provides: a resist composition which has good sensitivity, resolution, and etching resistance; a resist pattern forming method; a polymer compound; and a compound. The present invention employs a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The resist composition contains a resin component which has a constituent unit (a0) represented by general formula (a0-1). In the formula, Ar represents an aromatic ring. L1and L2each represent a divalent linking group or a single bond. Rs represents a substituent other than an iodine atom. C01represents a secondary carbon atom or a tertiary carbon atom. The acid dissociable group has a carbon-carbon unsaturated bond which is formed by the α-position of C01and the β-position of C01. R12and R13each represent a chain hydrocarbon group which may have a substituent, or alternatively, R12and R13122 represents a number of 0 or more.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07C 69/86 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with esterified hydroxyl groups
A resist composition including a resin component that has a constitutional unit containing an acid decomposable group whose polarity is increased due to an action of an acid, a constitutional unit represented by General Formula (a10-1), and a constitutional unit represented by General Formula (a5-1), and a resin component that has a constitutional unit represented by General Formula (z1-1) and no acid dissociable group. In the formulae, Wax1 represents an aromatic hydrocarbon group, Ra5 represents an acid non-dissociable aliphatic cyclic group in which some carbon atoms forming a ring skeleton may be substituted with oxygen atoms, and Rz0 represents a hydrogen atom or a hydrocarbon group containing no acid dissociable group
A resist composition including a resin component that has a constitutional unit containing an acid decomposable group whose polarity is increased due to an action of an acid, a constitutional unit represented by General Formula (a10-1), and a constitutional unit represented by General Formula (a5-1), and a resin component that has a constitutional unit represented by General Formula (z1-1) and no acid dissociable group. In the formulae, Wax1 represents an aromatic hydrocarbon group, Ra5 represents an acid non-dissociable aliphatic cyclic group in which some carbon atoms forming a ring skeleton may be substituted with oxygen atoms, and Rz0 represents a hydrogen atom or a hydrocarbon group containing no acid dissociable group
A method of producing a resist composition purified product, the method including a step of filtering a resist composition through a filter having a porous structure in which adjacent spherical cells communicate with each other, in which the filter includes a porous membrane containing at least one resin selected from the group consisting of polyimide and polyamide-imide, the resist composition contains a resin component (A1) whose solubility in a developing solution is changed by an action of an acid and an organic solvent component, and the resin component (A1) contains a copolymer having a constitutional unit (a01) with an onium salt structure that generates sulfonic acid upon light exposure and a constitutional unit (a02) with an onium salt structure that generates a carboxylic acid upon light exposure.
A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) or a constitutional unit derived from a compound represented by General Formula (a0-2). In the formulae, R01 and R02 represent a hydrogen atom; L01 and L02 represent a single bond or a divalent linking group; Ar01 and Ar02 represent an aryl group substituted with iodine atoms; Xa01 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ar01 is bonded; Ra02 represents a hydrocarbon group which may have a substituent; and Xa02 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ra02 is bonded and a group which is bonded to Ar02 to form a condensed ring
A resist composition including a resin component having a constitutional unit derived from a compound represented by General Formula (a0-1) or a constitutional unit derived from a compound represented by General Formula (a0-2). In the formulae, R01 and R02 represent a hydrogen atom; L01 and L02 represent a single bond or a divalent linking group; Ar01 and Ar02 represent an aryl group substituted with iodine atoms; Xa01 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ar01 is bonded; Ra02 represents a hydrocarbon group which may have a substituent; and Xa02 represents a group which forms an alicyclic hydrocarbon group together with a carbon atom to which Ra02 is bonded and a group which is bonded to Ar02 to form a condensed ring
Provided is a resist composition which generates an acid upon exposure to light and the solubility of which, in a developing solution, changes upon the action of an acid. The resist composition contains a compound that includes a cation (C0) represented by general formula (c0). Y0denotes an oxygen atom-containing polar group. X01and X02each denote a halogen atom or a halogenated alkyl group. R01, R02and R03each denote a substituent group. L01and L02each denote a hydrogen atom or a substituent group, and L01and L02 may bond to each other to form a ring together with a sulfur atom in the formula. n0 and m0 each denote an integer between 1 and 4, p01 denotes an integer between 0 and 3, and n0+m0+p01≤5. p02, q01, p03 and q02 each denote an integer between 0 and 4, p02+q01≤4, p03+q02≤4, and q01+q02≥1.
C07C 65/05 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring o-Hydroxy carboxylic acids
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
C07C 309/19 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton containing rings
C07C 309/23 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an unsaturated carbon skeleton containing rings other than six-membered aromatic rings
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
The purpose of the present invention is to provide: a solvate of a polyacid salt in which dispersibility or solubility in a solvent is improved compared to the polyacid salt itself, the solvate of a polyacid salt being characterized in that the solvent solvated with the polyacid salt includes a first solvent that is a good solvent with respect to the polyacid salt; and a method for producing the solvate of a polyacid salt.
C07B 63/00 - PurificationSeparation specially adapted for the purpose of recovering organic compoundsStabilisationUse of additives
C07C 211/63 - Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
C07C 215/40 - Compounds containing amino and hydroxy groups bound to the same carbon skeleton having hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton with quaternised nitrogen atoms bound to carbon atoms of the carbon skeleton
The purpose of the present invention is to provide a novel resist material and a method for producing the resist material, the resist material having a film-forming property and comprising: a polyacid salt or a solvate thereof; a first solvent; and a second solvent.
The present invention relates to a resist composition in which an acid is generated by exposure and solubility in a developer is changed by the action of the acid. The resist composition comprises: a base material component (A) of which the solubility in a developer changes due to the action of an acid; and an acid generator component (B) that generates an acid by exposure. The acid generator component (B) includes a compound (B1) represented by formula (b1), a compound (B2) represented by formula (b2), and a compound (B3) represented by formula (b3) in the description.
The present invention relates to a resist composition in which an acid is generated by exposure and solubility in a developer is changed by the action of the acid. The resist composition comprises: a base material component (A) of which the solubility in a developer changes due to the action of an acid; and an acid generator component (B) that generates an acid by exposure. The acid generator component (B) includes a compound (B1) represented by formula (b1), a compound (B2) represented by formula (b2), and a compound (B3) represented by formula (b3) in the description.
The present invention provides: a resist composition from which a resist pattern having favorable roughness-reducing properties can be formed; and a resist pattern forming method using said resist composition. The present invention pertains to a resist composition which generates an acid when exposed to light and of which the solubility in a developing solution changes due to the action of the acid, the resist composition comprising a base material component (A) of which the solubility in a developing solution changes due to the action of an acid, and an acid diffusion control component (D), wherein: the base material component (A) contains a polymer compound (A1) having a weight-average molecular weight of at least 30,000; the polymer compound (A1) has a constitutional unit (a1) represented by general formula (a-1) and a constitutional unit (a2) represented by general formula (a-2), which are disclosed in the specification; and the acid diffusion control component (D) contains at least one compound (D1) selected from the group consisting of compounds represented by general formula (d1-1) disclosed in the specification and compounds represented by general formula (d1-2) disclosed in the specification.
There are provided a processing solution, including: an oxidizing agent (A), and hexafluorosilicic acid (B), in which a molar ratio of the content of the hexafluorosilicic acid (B) to the content of the oxidizing agent (A) is from 8 to 1900; a method for processing a substrate; and a method for manufacturing a semiconductor substrate.
Provided are: a porous film capable of having a reduced hole diameter and an improved flow rate; and a method for producing the porous film. This porous film contains at least one resin component (A) selected from the group consisting of polyimides, polyamide imides, and polyether sulfones, and a solvent (S). The solvent (S) includes a nitrogen-containing polar solvent (S1) having a boiling point of at least 200°C under atmospheric pressure, and the contained amount of the nitrogen-containing polar solvent (S1) in the porous film is 10-2000 ppm.
C08J 9/26 - Working-up of macromolecular substances to porous or cellular articles or materialsAfter-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
C08L 79/08 - PolyimidesPolyester-imidesPolyamide-imidesPolyamide acids or similar polyimide precursors
Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The present invention contains: a base material component (A) of which the solubility in a developing solution changes due to the action of an acid; and a compound (D0) represented by formula (d0). Ar01is an aromatic ring; X01is a halogen atom; Rd01is a substituent (excluding halogen atoms and hydroxy groups); Rx0is a group represented by the formula (Rx0-1); m01 and n01 are integers of 0 or more, valence permitting; Mm+is an m-valent cation; Ar02is an aromatic ring; X02is a halogen atom; Ld01is a single bond or an alkylene group; Ld02is an alkylene group; Rd02 is a substituent other than a halogen atom; m02 and n02 are integers of 0 or more, valence permitting (all of k0 of m02 are not 0 when m01 is 0).
C07C 65/24 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic
A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed due to an action of the acid, in which a polymer compound having a constitutional unit derived from a compound represented by General formula (a0-1) is employed as a resin component whose solubility in a developing solution is changed due to the action of the acid. In General Formula (a0-1), W01 represents a polymerizable group-containing group, W02 represents an aromatic hydrocarbon group, Ya01 represents a divalent linking group or a single bond, Ra01 represents an acid dissociable group. Ra02 represents a chain-like hydrocarbon group which may have a substituent or an alicyclic hydrocarbon group which may have a substituent, m represents an integer of 1 or greater, and n represents an integer of 1 or greater
A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed due to an action of the acid, in which a polymer compound having a constitutional unit derived from a compound represented by General formula (a0-1) is employed as a resin component whose solubility in a developing solution is changed due to the action of the acid. In General Formula (a0-1), W01 represents a polymerizable group-containing group, W02 represents an aromatic hydrocarbon group, Ya01 represents a divalent linking group or a single bond, Ra01 represents an acid dissociable group. Ra02 represents a chain-like hydrocarbon group which may have a substituent or an alicyclic hydrocarbon group which may have a substituent, m represents an integer of 1 or greater, and n represents an integer of 1 or greater
Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The present invention contains: a base material component (A) of which the solubility in a developer changes due to the action of an acid; and a compound (D0) represented by formula (d0). Cy0is a cyclic group; Rx0is a group represented by formula (Rx0-1); Rd01is a substituent; m01 is an integer of 0 or more, valence permitting; and k0 is an integer of 2 or more, valence permitting. Mm+is an m-valent cation. Ar0is an aromatic ring; Ld0is a divalent linking group containing a hetero atom; and Rd02 is a substituent. m02 is an integer of 0 or more, and * represents a bond.
C07C 65/24 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic
C07C 205/60 - Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by carboxyl groups having nitro groups and carboxyl groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton the carbon skeleton being further substituted by singly-bound oxygen atoms in ortho-position to the carboxyl group, e.g. nitro-salicylic acids
C07C 233/81 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups
This resist composition contains a resin component (A1) having a structural unit (a0) derived from a compound represented by general formula (a0-1) (in the formula, Ra01represents a hydrogen atom, an alkyl group, or a halogenated alkyl group, L01represents a single bond, *1-C(=O)-O-*2, or *1-C(=O)-NH-*2, Ar01represents an aromatic group, L02represents a single bond or a divalent linkage group, Ra02represents a hydrogen atom or an alkyl group, I represents an iodine atom, m01 represents an integer of 1 or more, Mmd+ represents an m-valent onium cation, and m represents an integer of 1 or more).
C07C 65/19 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups having unsaturation outside the aromatic ring
C07C 65/28 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups having unsaturation outside the aromatic rings
Provided is a resist composition containing a resin component (A1) that includes a constituent unit (a0) derived from a compound represented by general formula (a0-1). (In the formula, W0is a polymerizable group-containing group; La01is a single bond or a divalent linking group; Ar0is an aromatic ring; I is an iodine atom; m0 is an integer of 0 or more; Ra0is an organic group which may have a substituent; n0 is an integer of 0 or more; La02is a single bond or a divalent linking group; m is an integer of 1 or more; and Mm+ is a m-valent cation.)
A resin composition for forming a phase-separated structure that can improve a process margin. A resin composition for forming a phase-separated structure containing a predetermined block copolymer A and a predetermined block copolymer B, the composition having a ratio (L0B/L0A) of L0 of the block copolymer B (L0B) to L0 of the block copolymer A (L0A) of 0.70 or more and 1.20 or less.
C09D 153/00 - Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers
42.
RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
A resist composition containing a resin, an acid generator, and a crosslinking agent, in which the resin is an alkali-soluble resin having a molar absorption coefficient of 2,000 mol−1·L·cm−1 or less at a wavelength of 248 nm, and the crosslinking agent is at least one of a melamine-based crosslinking agent, a urea-based crosslinking agent, an alkylene urea-based crosslinking agent, a glycoluril-based crosslinking agent, and an epoxy-based crosslinking agent.
Disclosed is a resist composition which contains a base material component (A) and a compound (B0) represented by general formula (b0). (In the formula, Ar represents an aromatic ring; I represents an iodine atom; OH represents a hydroxy group; L01represents a divalent linking group; Rf01represents a fluorinated alkyl group or an aromatic group having one or more fluorine atoms; L02represents a divalent linking group; Rf02represents an organic group having three or more fluorine atoms; x represents an integer of zero or more; y represents an integer of zero or more; z represents an integer of one or more; Mmd+ represents an m-valent counter cation; and m represents an integer of one or more.)
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C07C 309/42 - Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton having the sulfo groups bound to carbon atoms of non-condensed six-membered aromatic rings
Disclosed is a resist composition which contains a resin component that has a constitutional unit derived from formula (a0-m0). In the formula, W01represents a polymerizable group-containing group; La01represents a divalent linking group; Ra01and Ra02each represent a fluorinated alkyl group, a fluorine atom or a hydrogen atom; Rc01, Rc02, and Rc03each represent a halogen atom, a hydroxy group, or an alkoxy group having 1 to 4 carbon atoms; Rc04and Rc05each represent a halogen atom, a hydroxy group, an alkoxy group having 1 to 4 carbon atoms, or a hydrogen atom, or alternatively, Rc04and Rc0501020301020301020301020303 are satisfied.
A photosensitive composition including a radically polymerizable compound (A), and a radical polymerization initiator (C), which tends to hardly occur excessive decrease of weight of a cured product and a component other than a solvent in the photosensitive composition, and having good curability, and a cued product of the photosensitive composition are provided. A compound having a specific structure including a radically polymerizable group-containing group and a radically polymerizable compound other than the compound having the specific structure are used in combination as a radically polymerizable compound (A) in a photosensitive composition including the radically polymerizable compound (A) and a radical polymerization initiator (C).
G03F 7/028 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
A surface treatment agent including a compound (P) represented by R1—P(═O)(OR2)(OR3) in which R1 is an alkyl group, an alkoxy group, a fluorinated alkyl group, or an aromatic hydrocarbon group which may have a substituent, and R2 and R3 are each independently a hydrogen atom, an alkyl group, a fluorinated alkyl group, or an aromatic hydrocarbon group which may have a substituent; a compound (S) represented by R—SH . . . in which R is an alkyl group having 3 or more carbon atoms, a fluorinated alkyl group having 3 or more carbon atoms, or an aromatic hydrocarbon group which may have a substituent; and a solvent.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
47.
RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND ACID DIFFUSION CONTROL AGENT
Disclosed is a resist composition that contains: a resin component (A1), the solubility of which in a developer solution is changed by the action of an acid; and a compound (D0) which is represented by general formula (d0-1). (In the formula, Cy1 represents a cyclic group including an aliphatic ring; Cy2 represents a benzene ring or a naphthalene ring; Xd01represents an iodine atom or a bromine atom; Rd01and Rd02each represent a substituent; Ld01represents a divalent linking group; Ld02represents a divalent linking group or a single bond; m01 represents an integer of 1 or more; n01 and n02 each represent an integer of 0 or more; Mmd+ represents an organic cation; and md represents an integer of 1 or more.)
C07C 65/26 - Compounds having carboxyl groups bound to carbon atoms of six-membered aromatic rings and containing any of the groups OH, O-metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic containing rings other than six-membered aromatic rings
C07C 69/76 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring
C07C 69/753 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of polycyclic acids
C07C 233/63 - Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of rings other than six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by carboxyl groups
C07C 311/14 - Sulfonamides having sulfur atoms of sulfonamide groups bound to carbon atoms of rings other than six-membered aromatic rings
A resist composition containing a resin component that exhibits changed solubility in a developing solution under action of an acid, a photodecomposable base, and a fluorine additive component. The fluorine additive component includes a polymeric compound having a constitutional unit represented by General Formula (f01-1) and a constitutional unit represented by General Formula (f02-1). In the formulas, R represents a hydrogen atom; Vf01 represents an alkylene group or a halogenated alkylene group; Yf01 represents —CO—O— or —O—CO—; Rf01 represents an organic group containing a fluorine atom; Vf02 represents a divalent hydrocarbon group; Rf02 represents an acid dissociable group represented by General Formula (f02-r1-1); Rf021, Rf022, Rf023, Rf024, and Rf025 represent a hydrocarbon group; and Yf02 represents a quaternary carbon atom
A resist composition containing a resin component that exhibits changed solubility in a developing solution under action of an acid, a photodecomposable base, and a fluorine additive component. The fluorine additive component includes a polymeric compound having a constitutional unit represented by General Formula (f01-1) and a constitutional unit represented by General Formula (f02-1). In the formulas, R represents a hydrogen atom; Vf01 represents an alkylene group or a halogenated alkylene group; Yf01 represents —CO—O— or —O—CO—; Rf01 represents an organic group containing a fluorine atom; Vf02 represents a divalent hydrocarbon group; Rf02 represents an acid dissociable group represented by General Formula (f02-r1-1); Rf021, Rf022, Rf023, Rf024, and Rf025 represent a hydrocarbon group; and Yf02 represents a quaternary carbon atom
C08F 220/28 - Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
CURABLE COMPOSITION FOR FORMING LOW REFRACTIVE INDEX FILM, LOW REFRACTIVE INDEX FILM, OPTICAL DEVICE, AND METHOD FOR PRODUCING LOW REFRACTIVE INDEX FILM
To provide a curable composition for forming a low refractive index film of which a cured film excellent in heat resistance can be formed. A curable composition for forming a low refractive index film containing a hollow filler (A), a polymerizable compound (B), and a polymerization initiator (C), and not containing an alkali-soluble resin. The polymerizable compound (B) includes a compound (B1) having 5 or more polymerizable functional groups and a compound (B2) having 1 or more and 3 or less polymerizable functional groups. A ratio (B1/B2) of a mass of the compound (B1) to a mass of the compound (B2) is 0.25 or more and 3 or less.
A photocurable composition including an acrylic resin, an epoxy group-containing compound (excluding a component corresponding to the acrylic resin), and a cationic polymerization initiator. The acrylic resin has a glass transition point of 0° C. or lower. In such a photocurable composition, a cured film obtained by curing the photocurable composition has an elastic modulus of 2.0×106 [Pa] or greater and 1.0×109 [Pa] or less at a temperature of 80° C. when the viscoelasticity of the cured film is measured at a frequency of 1 Hz.
The present invention provides: a method for selectively producing a metatungstate compound which contains five onium cations or onium dications by performing a salt exchange reaction of a metatungstate in an acidic solution that has a pH of less than 3; a novel metatungstate compound for resists, the metatungstate compound being produced by the production method; and a resist material which contains the metatungstate compound for resists.
A resist composition including a polymer compound having a constitutional unit represented by General Formula (a10-1) below, an onium salt-based acid generator, a crosslinking agent, and a polynuclear phenol low-molecular-weight compound containing 5 or less phenyl groups, in which the resist composition has a solid content concentration of 15% by mass or greater. In the formula, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Yax1 represents a single bond or a divalent linking group; Wax1 represents an aromatic hydrocarbon group which may have a substituent; and nax1 represents an integer of 1 or greater
A resist composition including a polymer compound having a constitutional unit represented by General Formula (a10-1) below, an onium salt-based acid generator, a crosslinking agent, and a polynuclear phenol low-molecular-weight compound containing 5 or less phenyl groups, in which the resist composition has a solid content concentration of 15% by mass or greater. In the formula, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Yax1 represents a single bond or a divalent linking group; Wax1 represents an aromatic hydrocarbon group which may have a substituent; and nax1 represents an integer of 1 or greater
The present invention uses a resist composition that contains a base material component that has a structural unit derived from a compound represented by general formula (a0-1). In formula (a0-1), W01represents a polymerizable group–containing group, La01represents a divalent linking group or a single bond, and I represents an iodine atom. Ra02represents a substituent other than an iodine atom. Ya01represents a divalent linking group or a single bond. Va01represents a single bond, an alkylene group, or a fluorinated alkylene group. Ra01represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group. Mm+ is an m-valent cation.
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
C07C 309/17 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
The present invention employs a resist composition comprising a resin component that has a structural unit derived from a compound represented by general formula (a0-m0). In the general formula, W0represents a polymerizable-group-containing group. Rar1represents an aromatic group that may have a substituent. L01represents a divalent linking group or a single bond. Vb0represents an alkylene group, a fluorinated alkylene group, or a single bond. R0represents a fluorinated alkyl group, a fluorine atom, or a hydrogen atom. L02represents a (p+1)-valent linking group or a single bond. p represents an integer of 1 or more. However, when L02represents a single bond, p is 1. Rar2represents an aromatic group that may have a substituent. q represents an integer of 1 or more. Mm+ represents an m-valent onium cation. m represents an integer of 1 or more. With this resist composition, it is possible to enhance the effects of both a decrease in roughness and suppression of film loss during resist pattern formation.
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
The present invention provides a photosensitive resin composition containing a hydrogenated bisphenol A type epoxy resin (A1) having an epoxy equivalent weight of 600 or more, and a photoacid generator (B1) represented by general formula (b-1). In the formula, Rb1to Rb3each independently represent an aryl group, a heteroaryl group, an alkyl group, or an alkenyl group, optionally having a substituent. Rb1to Rb3do not include condensed rings. Rb4to Rb7 each independently represent an aryl group optionally having a substituent, or a fluorine atom.
C08G 59/68 - Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups characterised by the catalysts used
Provided are a resist composition, a method for forming a resist pattern, and a polymer compound. The resist composition contains a resin component (A1) having a structural unit (a0) represented by general formula (a0-0). In formula, R01and R02a0a0a0 is 1, La01a0a0 is 2 or more, La01a0a0+1)-valent linking group. La02is a single bond or a divalent linking group. Mm+ is an m-valent onium cation. m is an integer of 1 or more.
A method for producing a structure body including a phase-separated, the method including (i) applying a composition containing a block copolymer represented by Formula (n1) onto a substrate to form an undercoat agent layer, (ii) applying the composition containing the block copolymer onto the undercoat agent layer to form a self-organization layer, and (iii) subjecting the self-organization layer to phase separation. In General Formula (n1), A represents a first polymer block, B represents a second polymer block, R1c and R1d represent a substrate adsorptive group-containing group, R2c and R2d represent a substituent other than the substrate adsorptive group-containing group, m1 and n1 represent an integer of 0 to 5, m2 and n2 represent an integer of 0 to 5, m1+n1 >1, m1+m2<5, and n1+n2<5
A method for producing a structure body including a phase-separated, the method including (i) applying a composition containing a block copolymer represented by Formula (n1) onto a substrate to form an undercoat agent layer, (ii) applying the composition containing the block copolymer onto the undercoat agent layer to form a self-organization layer, and (iii) subjecting the self-organization layer to phase separation. In General Formula (n1), A represents a first polymer block, B represents a second polymer block, R1c and R1d represent a substrate adsorptive group-containing group, R2c and R2d represent a substituent other than the substrate adsorptive group-containing group, m1 and n1 represent an integer of 0 to 5, m2 and n2 represent an integer of 0 to 5, m1+n1 >1, m1+m2<5, and n1+n2<5
C09D 153/00 - Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers
C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers
59.
BLOCK COPOLYMER, UNDERCOAT AGENT, RESIN COMPOSITION FOR FORMING PHASE-SEPARATED STRUCTURE, AND METHOD FOR PRODUCING STRUCTURE BODY INCLUDING PHASE-SEPARATED STRUCTURE
A block copolymer represented by General Formula (n1) in which A represents a first polymer block, B represents a second polymer block, R1c and R1d each independently represents a substrate adsorptive group-containing group, R2c and R2d each independently represents a substituent other than the substrate adsorptive group-containing group, m1 and n1 each independently represents an integer of 0 to 5, m2 and n2 each independently represents an integer of 0 to 5, m1+n1≥1, m1+m2≤5, and n1+n2≤5
A block copolymer represented by General Formula (n1) in which A represents a first polymer block, B represents a second polymer block, R1c and R1d each independently represents a substrate adsorptive group-containing group, R2c and R2d each independently represents a substituent other than the substrate adsorptive group-containing group, m1 and n1 each independently represents an integer of 0 to 5, m2 and n2 each independently represents an integer of 0 to 5, m1+n1≥1, m1+m2≤5, and n1+n2≤5
C09D 183/10 - Block or graft copolymers containing polysiloxane sequences
C08G 81/02 - Macromolecular compounds obtained by interreacting polymers in the absence of monomers, e.g. block polymers at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
C09D 5/20 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects producedFilling pastes for coatings strippable as coherent films, e.g. temporary coatings strippable as coherent films
60.
RESIST COMPOSITION, RESIST PATTERN FORMING METHOD, COMPOUND, AND ACID GENERATOR
A resist composition including a base material component and a compound represented by General Formula (b0), in which Rb0 represents a fused cyclic group in which an aromatic ring and an alicyclic ring are fused, the alicyclic ring in the fused cyclic group has substituents, at least one of the substituents contains a hydrocarbon group having a bromine atom or an iodine atom, Yb0 represents a divalent linking group or a single bond, Yb0 is bonded to the alicyclic ring in the fused cyclic group, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a fluorinated alkyl group having 1 to 5 carbon atoms or a fluorine atom, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater
A resist composition including a base material component and a compound represented by General Formula (b0), in which Rb0 represents a fused cyclic group in which an aromatic ring and an alicyclic ring are fused, the alicyclic ring in the fused cyclic group has substituents, at least one of the substituents contains a hydrocarbon group having a bromine atom or an iodine atom, Yb0 represents a divalent linking group or a single bond, Yb0 is bonded to the alicyclic ring in the fused cyclic group, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a fluorinated alkyl group having 1 to 5 carbon atoms or a fluorine atom, Mm+ represents an m-valent organic cation, and m represents an integer of 1 or greater
C07C 309/12 - Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
This resist composition generates an acid via exposure to light, and the solubility thereof with respect to a developer is changed by the action of the acid. The resist composition contains a resin component (A1) whose solubility with respect to the developer is changed by the action of the acid. The resin component (A1) includes a structural unit (a0) represented by general formula (a0). R represents a hydrogen atom, a 1-5C alkyl group, or a 1-5C halogenated alkyl group; L01and L03each independently represent a single bond or a divalent linking group; L02represents -COO- or -CONH-; Ar01and Ar02each independently represent an arylene group which may have a substituent; and Rpg0 represents an acid-dissociable group.
Disclosed is a resist composition which contains a resin component (A1) that has a constituent unit (a0) derived from a compound represented by general formula (a0-1), and a fluororesin component (F1) that has a constituent unit (f1) containing a base dissociable group. (In the formula, W01represents a polymerizable group-containing group; La01and La02each independently represent a single bond or a divalent linking group; Ar01represents an aromatic hydrocarbon group; Ya01represents a divalent linking group or a single bond; Va01represents a single bond, an alkylene group or a fluorinated alkylene group; Ra01represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group having 1 to 5 carbon atoms; and Mm+ represents an m-valent cation).
Provided is a resist composition which generates an acid upon exposure to light, and the solubility of which in a developer solution is changed by the action of the acid. The resist composition contains a resin component (A1) which has a constituent unit (a0) represented by formula (a0). A0represents an oxygen atom or a sulfur atom; Y0represents a single bond or an (n01 + 1)-valent linking group; L01represents a single bond or a divalent linking group; R01represents a hydrogen atom or a group represented by formula (r01-1) or (r01-2); V01and V02each represent a single bond or a methylene group; n01 represents an integer of 1 or more; Mm+represents an m-valent cation; Y02represents a single bond or an (n02 + 1)-valent linking group; L02represents a single bond or a divalent linking group; n02 represents an integer of 1 or more; Y03represents a single bond or a divalent linking group; and R03 represents a hydrocarbon group.
C07C 69/94 - Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a six-membered aromatic ring of polycyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of six-membered aromatic rings
A resist composition containing a resin component (A1) including a constituent unit (a0) represented by general formula (a0) (wherein R represents a hydrogen atom, etc.; X0represents a hydrogen atom or an alkyl group; Ar01represents an optionally substituted arylene group; La01represents a single bond or a divalent linking group; and Rpg0 represents an acid-dissociable group).
This resist composition contains a resin component (A1) of which the solubility with respect to a developer changes by the action of an acid. The resin component (A1) includes a structural unit (a0) induced from a compound represented by general formula (a0-1) (in the formula, I represents an iodine atom, L0 represents a single bond or a divalent linkage group, and Rpg represents an acid-dissociable group).
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07C 69/65 - Halogen-containing esters of unsaturated acids
C07C 69/73 - Esters of carboxylic acids having esterified carboxyl groups bound to acyclic carbon atoms and having any of the groups OH, O-metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
C07D 307/00 - Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
C07D 409/06 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing only aliphatic carbon atoms
A method for producing an acid generator including reacting a carboxylic acid represented by Formula (d0-1) having a pKa of 0.50 or more with at least one of a nitrogen-containing base compound and an onium compound to obtain an intermediate represented by Formula (d0-p), and subjecting the intermediate (d0-p) to an ion exchange reaction with a compound represented by Formula (c0) to obtain a compound represented by Formula (d0). In the formulae, X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, nb1 represents an integer in a range of 1 to 5, 1≤nb1+nb2≤5 is satisfied, Yd represents a divalent linking group or a single bond, Mpm′+ represents an organic ammonium cation having a logPOW of 4.8 or less or an onium cation having a logPOW of 4.8 or less, X− represents a counter anion, and Mm+ represents an onium cation.
A method for producing an acid generator including reacting a carboxylic acid represented by Formula (d0-1) having a pKa of 0.50 or more with at least one of a nitrogen-containing base compound and an onium compound to obtain an intermediate represented by Formula (d0-p), and subjecting the intermediate (d0-p) to an ion exchange reaction with a compound represented by Formula (c0) to obtain a compound represented by Formula (d0). In the formulae, X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, nb1 represents an integer in a range of 1 to 5, 1≤nb1+nb2≤5 is satisfied, Yd represents a divalent linking group or a single bond, Mpm′+ represents an organic ammonium cation having a logPOW of 4.8 or less or an onium cation having a logPOW of 4.8 or less, X− represents a counter anion, and Mm+ represents an onium cation.
A resist composition containing a base component, an acid generator component, and an acid diffusion-controlling agent. The acid generator component includes a compound having a molar absorption coefficient of 50,000 mol−1·L·cm−1 or less at an exposure wavelength of 193 nm, and the acid diffusion-controlling agent includes a compound represented by General Formula (d0), in which Rd01 represents a cyclic group or a chain alkenyl group which may have a substituent, Yd01 represents a divalent linking group containing an oxygen atom, m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation
A resist composition containing a base component, an acid generator component, and an acid diffusion-controlling agent. The acid generator component includes a compound having a molar absorption coefficient of 50,000 mol−1·L·cm−1 or less at an exposure wavelength of 193 nm, and the acid diffusion-controlling agent includes a compound represented by General Formula (d0), in which Rd01 represents a cyclic group or a chain alkenyl group which may have a substituent, Yd01 represents a divalent linking group containing an oxygen atom, m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation
Rd01-Yd01-CH2—SO3⊖(Mm⊕)1/m (d0)
A resin composition for forming a phase-separated structure, the resin composition containing a first block copolymer having a first a block and a first b block, a second block copolymer having a second a block and a second b block, a homopolymer A compatible with the first a block and the second a block, and a homopolymer B compatible with the first b block and the second b block, in which a constitutional unit constituting the first a block and a constitutional unit constituting the second a block are the same, a constitutional unit constituting the first b block and a constitutional unit constituting the second b block are the same, and a number-average molecular weight of the second block copolymer is larger than a number-average molecular weight of the first block copolymer.
C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers
69.
CLEANING SOLUTION, METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR
There are provided a cleaning solution, including: an oxoacid having an acid dissociation constant pka of less than 5.0 and a valence of two or more, in which a value of pH of the cleaning solution is smaller than the acid dissociation constant; a method for cleaning a semiconductor substrate using the same; and a method for manufacturing a semiconductor.
A processing solution for a semiconductor device including a fluorine-containing compound, water, a cyclic ether compound, and a water-soluble organic solvent that is not the cyclic ether compound; a method for processing a substrate; and a method for manufacturing a semiconductor device.
The present invention employs a resist composition which contains a resin component that has a constituent unit derived from a compound represented by general formula (a01-b) and a constituent unit derived from a compound represented by general formula (a02-d). In the formulae, W01and W02each represent a group containing a polymerizable group. X01and X02each represent a divalent linking group or a single bond. R0represents a fluorinated alkyl group having 1 to 5 carbon atoms, a fluorine atom, or a hydrogen atom. Mm+represents an m-valent onium cation. Nn+represents an n-valent onium cation. Meanwhile, an iodine atom is contained in any one or more of X01, X02, Mm+, and Nn+. This resist composition makes it possible to enhance the sensitivity during the formation of a resist pattern, and to achieve improvement of the lithography characteristics such as reduction in roughness of a pattern, and also makes it possible to increase the process margin.
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
Disclosed is a resist composition which generates an acid when exposed to light, and the solubility of which with respect to a developer solution is changed by the action of the acid. The resist composition contains a resin component (A1), the solubility of which with respect to a developer solution is changed by the action of an acid, and the resin component (A1) comprises a constituent unit (a0) that is represented by general formula (a0-1). In the formula, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; L0represents a single bond or a divalent linking group; X0represents an oxygen atom, a sulfur atom, or a group represented by -N(Rx0)-; Rx0represents an alkyl group having 1 to 3 carbon atoms; Rpg represents an acid dissociable group; R0 represents a substituent; and n0 represents an integer of 0 to 4.
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C07D 209/42 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
C07D 307/79 - Benzo [b] furansHydrogenated benzo [b] furans with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the hetero ring
C07D 307/84 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen
C07D 307/85 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
C07D 307/86 - Benzo [b] furansHydrogenated benzo [b] furans with an oxygen atom directly attached in position 7
C07D 333/70 - Carbon atoms having three bonds to hetero atoms with at the most one bond to halogen attached in position 2
C07D 409/14 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing three or more hetero rings
C08F 20/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
73.
RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER COMPOUND, AND COMPOUND
A resist composition which generates an acid upon exposure to light and whose solubility in a developing solution is changed under action of an acid, the resist composition containing a resin component whose solubility in a developing solution is changed under action of an acid, in which the resin component has a constitutional unit derived from a compound represented by General Formula (a0) in which W represents a polymerizable group, Ar represents an aromatic hydrocarbon group, —OH represents a hydroxy group, La0 represents a divalent linking group, Ya0 represents a single bond or a divalent linking group, Ra01 and Ra02 each independently represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group, n0 represents an integer in a range of 1 to 4, m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation.
A treatment liquid containing a fluorine-containing compound, an organic solvent, a basic compound represented by General Formula NR1R2R3, and water, in which a content of the organic solvent is 65% by mass or more with respect to a total amount of the treatment liquid, and a pH is 6 to 9. In the formula, R1 to R3 are each independently a hydrogen atom or a hydrocarbon group which may have a substituent.
This resist composition contains: a base material component (A); an acid generating agent component (B) including a compound (B0) represented by formula (b0); and a fluorine additive component (F) having a structural unit (f0) represented by formula (f0). Rpg represents an acid decomposable group, Rl01and Rl02each represent a cyclic hydrocarbon group, L01represents a divalent linkage group or a single bond, L02and L03each represent a divalent linkage group, Rm1represents a substituent other than an iodine atom, Vb0represents an alkylene group, a fluorinated alkylene group, or the like, R0represents a fluorinated alkyl group, a fluorine atom, or the like, nb1 represents an integer of 1-4, nb2 represents 1-4, nb3 represents an integer of 0-3, mb1 and mb2 each represent 0 or 1, Mm+ represents an m-valent organic cation, R represents an alkyl group, a halogenated alkyl group, or the like, X0represents a divalent linkage group not having an acid dissociable site, and Rf0 represents an organic group having a fluorine atom.
A resist composition containing a resin component (A1) and a photodecomposable base (D0) represented by General Formula (d0) that generates a carboxylic acid having a pKa of 0.50 or more as a generated acid. In the formula, Rm represents a hydrogen atom or a hydroxy group, X0 represents a bromine atom or an iodine atom, Yd0 represents a divalent linking group or a single bond, Rb1 represents a fluorine atom or a fluorinated alkyl group, p01 represents an integer in a range of 1 to 5, and Rb2 and Rb3 are hydrocarbon groups, provided that at least one Rb1 is bonded to an ortho-position or a meta-position of a benzene ring, and the number of all fluorine atoms contained in —F and/or —CFRx1Rx2 bonded to an aromatic ring bonded to the sulfur atom in the formula is 3 or more, and Rx1 and Rx2 represent a fluorine atom or a hydrogen atom
A resist composition containing a resin component (A1) and a photodecomposable base (D0) represented by General Formula (d0) that generates a carboxylic acid having a pKa of 0.50 or more as a generated acid. In the formula, Rm represents a hydrogen atom or a hydroxy group, X0 represents a bromine atom or an iodine atom, Yd0 represents a divalent linking group or a single bond, Rb1 represents a fluorine atom or a fluorinated alkyl group, p01 represents an integer in a range of 1 to 5, and Rb2 and Rb3 are hydrocarbon groups, provided that at least one Rb1 is bonded to an ortho-position or a meta-position of a benzene ring, and the number of all fluorine atoms contained in —F and/or —CFRx1Rx2 bonded to an aromatic ring bonded to the sulfur atom in the formula is 3 or more, and Rx1 and Rx2 represent a fluorine atom or a hydrogen atom
A photosensitive composition which tends to hardly occur excessive decrease of weight of a component (in which is a component other than a solvent, when the composition or the photosensitive composition includes the solvent) in the composition or the photosensitive composition by heating, and includes inorganic microparticles in a stably dispersed state, a cured product of the photosensitive composition, a compound which can be preferably added to the composition and the photosensitive composition, and a production method of the compound are provided. In a composition including a photopolymerizable compound (A) and inorganic microparticles (B) or a photosensitive composition including a photopolymerizable compound (A), inorganic microparticles (B), and an initiator, a compound with a specific structure having a radically polymerizable group-containing group or a cationically polymerizable group-containing group is used as the photopolymerizable compound (A).
G03F 7/028 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
C07D 217/02 - Heterocyclic compounds containing isoquinoline or hydrogenated isoquinoline ring systems with only hydrogen atoms or radicals containing only carbon and hydrogen atoms, directly attached to carbon atoms of the nitrogen-containing ringAlkylene-bis-isoquinolines
C07D 277/74 - Sulfur atoms substituted by carbon atoms
A cleaning liquid for removing an etching residue containing a titanium component, the cleaning liquid including a compound represented by General Formula (a1) below, in which the cleaning liquid has a pH of 6 or greater, which is measured at 23° C., in which R represents an organic group or a hydrogen atom
A cleaning liquid for removing an etching residue containing a titanium component, the cleaning liquid including a compound represented by General Formula (a1) below, in which the cleaning liquid has a pH of 6 or greater, which is measured at 23° C., in which R represents an organic group or a hydrogen atom
A cleaning liquid that removes an etching residue containing a titanium component, the cleaning liquid including a compound represented by General Formula (a1) and a compound (B) represented by General Formula (b1). In formula (a1), Ra0 represents a monovalent organic group containing a hydroxy group or a carboxy group, or a hydrogen atom. In formula (b1), Rb0 represents a monovalent organic group or a hydrogen atom
A cleaning liquid that removes an etching residue containing a titanium component, the cleaning liquid including a compound represented by General Formula (a1) and a compound (B) represented by General Formula (b1). In formula (a1), Ra0 represents a monovalent organic group containing a hydroxy group or a carboxy group, or a hydrogen atom. In formula (b1), Rb0 represents a monovalent organic group or a hydrogen atom
A method for processing a substrate, for processing a surface of a substrate having projections/depressions formed on the surface, the method having: a rinsing step S101 of rinsing the surface of the substrate with a rinsing solution containing water; a chemical solution replacement step S102 of bringing a chemical solution into contact with the surface of the substrate that has been rinsed, to replace a liquid adhering to the surface of the substrate from the rinsing solution to the chemical solution; a state change step S103 of raising a temperature of the substrate wetted with the chemical solution to a temperature equal to or higher than the critical temperature of the chemical solution to allow the chemical solution to reach a supercritical state; and a removing step S104 of removing the chemical solution in the supercritical state from the surface of the substrate, in which the chemical solution contains an organic solvent (S1) (excluding, however, organic solvents having a fluorine atom) having a higher specific gravity than water.
Disclosed is a pattern forming method which includes a step for exposing a metal compound-containing film to light and a step for processing the light-exposed metal compound-containing film with use of a processing liquid, and which is characterized in that the processing liquid contains 20% by mass or more of a first solvent that is composed of one or more solvents selected from the group consisting of (1) a benzene ring in which one or more hydrogen atoms are each substituted by a polar substituent, (2) a 5- or 6-membered aromatic heterocyclic ring in which one or more hydrogen atoms may be each substituted by a polar substituent, (3) a 5- or 6-membered hydrocarbon ring which has one or more double bonds in the ring, and in which at least one hydrogen atom is substituted by a polar substituent, or alternatively, a 5- or 6-membered hydrocarbon ring which has a carbonyl group in the ring, and in which at least one hydrogen atom may be substituted by a polar substituent, and (4) a 5- or 6-membered non-aromatic heterocyclic ring in which at least one hydrogen atom is substituted by a polar substituent, or alternatively, a 5- or 6-membered non-aromatic heterocyclic ring which has a total of two or more of hetero atoms and/or carbonyl groups in the ring, and in which at least one hydrogen atom may be substituted by a polar substituent.
This pattern forming method comprises a step of exposing a metal compound-containing film and a step of using a processing liquid to process the exposed metal compound-containing film, the method being characterized in that: the processing liquid includes an organic solvent; the organic solvent includes a first solvent in which ClogP ≤ 0.7 and ΔH + ΔP ≥ 16; and the content of the first solvent is 30 mass% or more with respect to 100 mass% of the organic solvent.
The present invention provides: a novel resist composition containing (A) a resin component having solubility in developing solution that is changed by the action of an acid, and (B) a polyacid salt; and a pattern forming method using the composition.
The present invention employs a resist composition which generates an acid by means of light exposure and of which the solubility in a developing solution is changed by the action of the acid, the resist composition containing: a base material component of which the solubility in a developing solution is changed by the action of the acid; and a compound (D0) which is represented by general formula (d0). In general formula (d0), Z is a polycyclic cyclic group that includes a benzene ring. Rd01is a substituent. j is an integer of 0 or more, valence permitting. When j is an integer of 2 or more, each of the plurality of Rd01s may be the same or may be different. k is an integer of 1 or more, valence permitting. Yd0is a divalent linking group or a single bond. m is an integer of 1 or more, and Mm+ represents an organic cation having a valence of m. Said resist composition makes it possible to have good lithographic properties, such as uniformity of pattern dimensions, and to improve in stability over time.
C07C 205/57 - Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by carboxyl groups having nitro groups and carboxyl groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
C07C 205/58 - Compounds containing nitro groups bound to a carbon skeleton the carbon skeleton being further substituted by carboxyl groups having nitro groups and carboxyl groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton the carbon skeleton being further substituted by halogen atoms
An etching solution, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by formula (1) below, and water, a mass of the oxidizing agent is 20 mass % or more with respect to a mass of the etching solution,
An etching solution, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by formula (1) below, and water, a mass of the oxidizing agent is 20 mass % or more with respect to a mass of the etching solution,
An etching solution, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by formula (1) below, and water, a mass of the oxidizing agent is 20 mass % or more with respect to a mass of the etching solution,
and R1 and R2 each independently represents a hydrogen atom, a halogen atom, an alkyl group, a fluoroalkyl group, or an alkoxy group, and R3 and R4 each independently represents a halogen atom, a hydroxy group, an alkyl group, a fluoroalkyl group, or an alkoxy group.
An etching solution having excellent etching selectivity, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by the following formula (1), a carboxylic acid as a solvent, and water,
An etching solution having excellent etching selectivity, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by the following formula (1), a carboxylic acid as a solvent, and water,
An etching solution having excellent etching selectivity, an etching method using the etching solution, and a method for manufacturing a semiconductor device using the etching solution. The etching solution includes an oxidizing agent, a fluoride, a compound represented by the following formula (1), a carboxylic acid as a solvent, and water,
and R1 and R2 each independently represents a hydrogen atom, a halogen atom, an alkyl group, a fluoroalkyl group, or an alkoxy group, and R3 and R4 each independently represents a halogen atom, a hydroxy group, an alkyl group, a fluoroalkyl group, or an alkoxy group.
A method of forming a surface treatment film on a substrate having, on a surface thereof, a first region where an insulator is exposed and a second region where at least one metallic matter is exposed, in which the surface treatment film is formed on the second region and is capable of suppressing intrusion of the surface treatment film onto the first region. A method of forming a surface treatment film, including preparing the substrate, oxidizing a surface of the second region, and forming a surface treatment film on the second region by exposing a surface of the substrate after the oxidation to a surface-treatment agent including a thiol having 8 or less carbon atoms.
C23C 16/02 - Pretreatment of the material to be coated
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
A photosensitive composition which tends to hardly occur excessive decrease of weight of a component (in which is a component other than a solvent, when the composition or the photosensitive composition includes the solvent) in the composition or the photosensitive composition by heating, and include inorganic microparticles in a stably dispersed state, a cured product of the photosensitive composition, a compound which can be preferably added to the composition and the photosensitive composition, and a production method of the compound are provided. In a composition including a photopolymerizable compound (A) and inorganic microparticles (B) or a photosensitive composition including a photopolymerizable compound (A), inorganic microparticles (B), and an initiator, a compound with a specific structure having a radically polymerizable group-containing group or a cationically polymerizable group-containing group is used as the photopolymerizable compound (A).
C07C 319/14 - Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides
C07C 319/20 - Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides by reactions not involving the formation of sulfide groups
C07C 323/19 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and singly-bound oxygen atoms bound to the same carbon skeleton having the sulfur atom of at least one of the thio groups bound to a carbon atom of a six-membered aromatic ring of the carbon skeleton with singly-bound oxygen atoms bound to acyclic carbon atoms of the carbon skeleton
C07C 323/20 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and singly-bound oxygen atoms bound to the same carbon skeleton having the sulfur atom of at least one of the thio groups bound to a carbon atom of a six-membered aromatic ring of the carbon skeleton with singly-bound oxygen atoms bound to carbon atoms of the same non-condensed six-membered aromatic ring
A resist composition containing a base material component (A) and a compound represented by General Formula (d0), in which Rd0 represents a condensed cyclic group in which an aromatic ring and an alicyclic ring are condensed, the alicyclic ring in the condensed cyclic group has a substituent, at least one of the substituents includes a hydrocarbon group having a bromine atom or a hydrocarbon group having an iodine atom, Yd0 represents a divalent linking group or a single bond, Yd0 is bonded to the alicyclic ring in the condensed cyclic group, Mm+ represents an m-valent organic cation, m represents an integer of 1 or more
A resist composition containing a base material component (A) and a compound represented by General Formula (d0), in which Rd0 represents a condensed cyclic group in which an aromatic ring and an alicyclic ring are condensed, the alicyclic ring in the condensed cyclic group has a substituent, at least one of the substituents includes a hydrocarbon group having a bromine atom or a hydrocarbon group having an iodine atom, Yd0 represents a divalent linking group or a single bond, Yd0 is bonded to the alicyclic ring in the condensed cyclic group, Mm+ represents an m-valent organic cation, m represents an integer of 1 or more
22—-containing cyclic group, or a carbonate-containing cyclic group, the resin component (A1) not containing an aromatic ring. The plasticizer component (Z) has a structural unit (z1) represented by general formula (z1-1) described in the description, and the contained amount of the plasticizer component (Z) is 20 parts by mass or less per 100 parts by mass of the resin component (A1).
The present invention employs a resist composition that contains a resin component having a constituent unit represented by general formula (a0-1). In formula (a0-1), R01is a divalent linking group or a single bond. R02is an acid-dissociable group. Y00is a divalent linking group or a single bond. R00is an aromatic hydrocarbon group that may have a substituent. Y01is a divalent linking group or a single bond. Mm+ is an m-valent onium cation. m is an integer of 1 or more. With this resist composition, it is possible to form a resist pattern having high sensitivity and excellent lithography properties such as uniformity of pattern dimensions.
A surface-modified-layer-forming composition for forming a surface-modified layer provided between a support and a resist film, the surface-modified-layer-forming composition containing a resin component (G) having a structural unit (g0) represented by general formula (g0-1), and a resin component (P) having a structural unit (p0) represented by general formula (p0-1). R represents a hydrogen atom, a C1–5 alkyl group, or a C1–5 halogenated alkyl group, Yg0is a divalent linking group, Rg0is an epoxy-group-containing group, Yp0is a divalent linking group; and Rp0 is a C2–20 chain hydrocarbon group that may have a substituent.
G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
94.
RESIN COMPOSITION FOR FORMING ETCHING MASK PATTERN, AND METHOD FOR MANUFACTURING ETCHING MASK PATTERN
A resin composition for forming an etching mask pattern containing a block copolymer having a first block and a second block, and a homopolymer having a number-average molecular weight of less than 3,000. The first block is a polymer of a constitutional unit represented by Formula (b1) and the second block is a random copolymer of a constitutional unit represented by Formula (b2m) and a constitutional unit represented by Formula (b2g). The proportion of the volume of the first block is 20% to 80% by volume. The homopolymer includes a polymer of the constitutional unit represented by Formula (b1). In the formulas illustrated below, R1 is an alkyl group, Rb1 is a hydrogen atom or a methyl group, n is an integer of 0 to 5, R2 is an alkyl group, R3 is an alkylene group, Rb2 is a hydrogen atom or the like, and x is more than 0 and less than 1
A resin composition for forming an etching mask pattern containing a block copolymer having a first block and a second block, and a homopolymer having a number-average molecular weight of less than 3,000. The first block is a polymer of a constitutional unit represented by Formula (b1) and the second block is a random copolymer of a constitutional unit represented by Formula (b2m) and a constitutional unit represented by Formula (b2g). The proportion of the volume of the first block is 20% to 80% by volume. The homopolymer includes a polymer of the constitutional unit represented by Formula (b1). In the formulas illustrated below, R1 is an alkyl group, Rb1 is a hydrogen atom or a methyl group, n is an integer of 0 to 5, R2 is an alkyl group, R3 is an alkylene group, Rb2 is a hydrogen atom or the like, and x is more than 0 and less than 1
C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers
95.
METHOD FOR MANUFACTURING ETCHING MASK PATTERN, AND RESIN COMPOSITION FOR FORMING ETCHING MASK PATTERN
A manufacturing method including applying a resin composition for forming an etching mask pattern onto a support to form a layer containing a block copolymer and having a film thickness of 25 nm or more, and phase-separating the layer. The resin composition contains a block copolymer having a first block and a second block, the first block is includes a constitutional unit having General Formula (b1), and the second block is a random copolymer of a constitutional unit of General Formula (b2m) and a constitutional unit of General Formula (b2g). In the formulas illustrated below, R1 is an alkyl group which may have an oxygen atom or a silicon atom; R2 is an alkyl group; R3 is an alkylene group; and x represents a molar ratio and is more than 0 and 0.10 or less
A manufacturing method including applying a resin composition for forming an etching mask pattern onto a support to form a layer containing a block copolymer and having a film thickness of 25 nm or more, and phase-separating the layer. The resin composition contains a block copolymer having a first block and a second block, the first block is includes a constitutional unit having General Formula (b1), and the second block is a random copolymer of a constitutional unit of General Formula (b2m) and a constitutional unit of General Formula (b2g). In the formulas illustrated below, R1 is an alkyl group which may have an oxygen atom or a silicon atom; R2 is an alkyl group; R3 is an alkylene group; and x represents a molar ratio and is more than 0 and 0.10 or less
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
C08F 287/00 - Macromolecular compounds obtained by polymerising monomers on to block polymers
C09D 151/00 - Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bondsCoating compositions based on derivatives of such polymers
A resin composition for forming an etching mask pattern, with which a phase-separated structure having a period (L0) of less than 20 nm and having excellent vertical orientation even when subjected to high-temperature annealing can be obtained; and a method for manufacturing an etching mask pattern. The method includes applying the resin composition onto a support to form a block copolymer layer having a film thickness of 25 nm or more and phase-separating the block copolymer layer. The resin composition contains a block copolymer having a first block and a second block, the first block includes a structure of General Formula (b1), and the second block consists of a block 2M of a structure of General Formula (b2m) and a block 2G of a structure of General Formula (b2g), and y/(y+z) is 0.01 or more and 0.11 or less; R1 is an alkyl group, R2 is an alkyl group; and R3 is an alkylene group
A resin composition for forming an etching mask pattern, with which a phase-separated structure having a period (L0) of less than 20 nm and having excellent vertical orientation even when subjected to high-temperature annealing can be obtained; and a method for manufacturing an etching mask pattern. The method includes applying the resin composition onto a support to form a block copolymer layer having a film thickness of 25 nm or more and phase-separating the block copolymer layer. The resin composition contains a block copolymer having a first block and a second block, the first block includes a structure of General Formula (b1), and the second block consists of a block 2M of a structure of General Formula (b2m) and a block 2G of a structure of General Formula (b2g), and y/(y+z) is 0.01 or more and 0.11 or less; R1 is an alkyl group, R2 is an alkyl group; and R3 is an alkylene group
C08F 297/02 - Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
97.
RADIANT FILM, METHOD FOR PRODUCING RADIANT FILM, HEAT-DISSIPATING FILM, HEAT-DISSIPATING DEVICE, AND COATING LIQUID
Provided are: a radiant film that exhibits good heat-dissipating performance; a method for producing said radiant film; a heat-dissipating film comprising said radiant film; a heat-dissipating device provided with said heat-dissipating film; and a coating liquid able to be advantageously used to form said radiant film. In the present invention, a film is used as a radiant film, the film comprising a composition that contains: a crosslinked SPA obtained by crosslinking sodium polyacrylate with a crosslinking agent comprising a metal compound containing a divalent or higher metal ion; and a crosslinked PVA obtained by crosslionking poly(vinyl alcohol). Said composition preferably contains an inorganic filler.
A resist composition including a resin component having a constitutional unit represented by General Formula (a0-1) and a compound represented by General Formula (d0-1). In General Formula (a0-1), R0 represents a hydrogen atom, an alkyl group, a halogen atom, or a halogenated alkyl group; Vax0 represents a single bond or a divalent linking group; Wa represents a divalent aromatic hydrocarbon group; Va0 represents a divalent hydrocarbon group; na0 represents an integer of 0 to 2; and Ra00 represents an acid dissociable group. In General Formula (d0-1), X0 represents a bromine atom or an iodine atom; Rm represents a hydroxy group, an alkyl group, a fluorine atom, or a chlorine atom; nd1 represents an integer of 1 to 5; nd2 represents an integer of 0 to 4; Yd0 represents a divalent linking group or a single bond; Mm+ represents an m-valent organic cation; and m represents an integer of 1 or greater
A resist composition including a resin component having a constitutional unit represented by General Formula (a0-1) and a compound represented by General Formula (d0-1). In General Formula (a0-1), R0 represents a hydrogen atom, an alkyl group, a halogen atom, or a halogenated alkyl group; Vax0 represents a single bond or a divalent linking group; Wa represents a divalent aromatic hydrocarbon group; Va0 represents a divalent hydrocarbon group; na0 represents an integer of 0 to 2; and Ra00 represents an acid dissociable group. In General Formula (d0-1), X0 represents a bromine atom or an iodine atom; Rm represents a hydroxy group, an alkyl group, a fluorine atom, or a chlorine atom; nd1 represents an integer of 1 to 5; nd2 represents an integer of 0 to 4; Yd0 represents a divalent linking group or a single bond; Mm+ represents an m-valent organic cation; and m represents an integer of 1 or greater
G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
C08F 212/14 - Monomers containing only one unsaturated aliphatic radical containing one ring substituted by hetero atoms or groups containing hetero atoms
C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
A chip for cell culture, including a laminate having a flow path structure inside, in which respective members constituting respective layers of the laminate are adhered by adhesive layers, and the adhesive layer includes a first adhesive layer formed of an adhesive that contains a polyester-based resin having a glass transition temperature of 37° C. or higher and 120° C. or lower.
This resist composition generates an acid when being exposed, and changes the solubility with respect to a developer by the action of the acid. The resist composition contains a resin component (A1) of which the solubility with respect to a developer changes by the action of an acid. The resin component (A1) includes a structural unit (a0) represented by general formula (a0-1). L01represents a divalent linkage group, L02represents a divalent linkage group including at least one selected from the group consisting of an ether bond, an amide bond, and an ester bond, R01represents a hydrocarbon group optionally having a substituent, Rf01-Rf03each independently represent a hydrogen atom, a fluorine atom, or a fluorinated alkyl group, n0 represents an integer of 0-5, m represents an integer of 1 or more, and Mm+ represents an m-valent cation.
