A system for varying a path length of a beam of radiation. The system comprises a device comprising a centre portion rotatably mounted about a rotation axis, the centre portion being configured to allow the passage of radiation there through; and a plurality of element pairs. Each element pair comprises a first and second element protruding from the centre portion, wherein each of the first and second elements of the plurality of element pairs comprise a non-reflective face and a reflective face. When the beam of radiation is transmitted through a pre-determined area of the non-reflective face of one of the first elements, in a first direction, a path is defined as the beam of radiation is reflected by the reflective face of the first element towards the reflective face of the corresponding second element, and further reflected by the reflective face of the second element towards the non-reflective face of the second element. The system further comprises a motor configured to rotate the device about the rotation axis at a pre-determined rotational speed.
G01J 3/453 - Interferometric spectrometry by correlation of the amplitudes
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
G02B 17/02 - Catoptric systems, e.g. image erecting and reversing system
A method for determining the thickness of a plurality of coating layers. The method comprises the steps of performing a calibration analysis on calibration data to determine initial values and search limits of optical parameters of the plurality of coating layers, irradiating the plurality of layers with a pulse of THz radiation in the range from 0.01 THz to 10 THz, detecting the reflected radiation to produce a sample response derived from the reflected radiation, producing a synthesized waveform using the optical parameters and predetermined initial thicknesses of the layers, varying the thicknesses and the optical parameters within the search limits to minimize the error measured between the sample response and the synthesized waveform, and outputting the thicknesses of the layers.
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
A method for analysing a sample comprising a layer having a first interface and a second interface, the method comprising: Irradiating the sample with a pulse of terahertz radiation, said pulse comprising a plurality of frequencies in the range from 0.01 THz to 10 THz; Detecting radiation reflected from the sample to produce a sample waveform; Obtaining a first reflection waveform from the sample waveform, the first reflection waveform corresponding to the reflection from the first interface; Obtaining a second reflection waveform from the sample waveform, the second reflection waveform corresponding to the reflection from the second interface; Comparing the first reflection waveform with the second reflection wave-form to produce an estimate of a thickness and a complex refractive index of the layer; Producing a synthesised signal using the estimate of the thickness and complex refractive index; Varying at least one of the thickness and complex refractive index to reduce an error between the sample waveform and the synthesised signal; and Outputting the thickness of the layer.
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 21/41 - RefractivityPhase-affecting properties, e.g. optical path length
G01N 21/84 - Systems specially adapted for particular applications
A method and apparatus is provided for determining the thickness of coating layers of a curved surface when examining the surface with terahertz radiation. The method involves measuring detected reflected radiation and applies a correction factor to obtain the thicknesses of the layers. This addresses the problem of compensating for the curvature of the surface when determining coating thickness.
G01B 21/04 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
5.
Test system with adjustable delay line and radiation feedback control
A test system for testing a device having a plurality of electrical contacts. The test system comprising: a device table operable to hold at least one device under test, a probe comprising at least one probe end for contacting electrical contacts of a device under test, a movement mechanism operable to move one or both of the device table and the probe so as to bring the at least one probe end into contact with at least one electrical contact of a device under test, and a profile determining system configured to determine a profile of the electrical contacts of a device under test.
A method for determining the thickness of a plurality of coating layers. The method comprises the steps of performing a calibration analysis on calibration data to determine initial values and search limits of optical parameters of the plurality of coating layers, irradiating the plurality of layers with a pulse of THz radiation in the range from 0.01 THz to 10 THz, detecting the reflected radiation to produce a sample response derived from the reflected radiation, producing a synthesized waveform using the optical parameters and predetermined initial thicknesses of the layers, varying the thicknesses and the optical parameters within the search limits to minimize the error measured between the sample response and the synthesized waveform, and outputting the thicknesses of the layers.
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
A method for analysing a sample comprising a layer having a first interface and a second interface, the method comprising: Irradiating the sample with a pulse of terahertz radiation, said pulse comprising a plurality of frequencies in the range from 0.01 THz to 10 THz; Detecting radiation reflected from the sample to produce a sample waveform; Obtaining a first reflection waveform from the sample waveform, the first reflection waveform corresponding to the reflection from the first interface; Obtaining a second reflection waveform from the sample waveform, the second reflection waveform corresponding to the reflection from the second interface; Comparing the first reflection waveform with the second reflection waveform to produce an estimate of a thickness and a complex refractive index of the layer; Producing a synthesised signal using the estimate of the thickness and complex refractive index; Varying at least one of the thickness and complex refractive index to reduce an error between the sample waveform and the synthesised signal; and Outputting the thickness of the layer.
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 21/17 - Systems in which incident light is modified in accordance with the properties of the material investigated
G01B 21/04 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
A method and apparatus is provided for determining the thickness of coating layers of a curved surface when examining the surface with terahertz radiation. The method involves measuring detected reflected radiation and applies a correction factor to obtain the thicknesses of the layers. This addresses the problem of compensating for the curvature of the surface when determining coating thickness.
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01B 11/24 - Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
G01B 21/04 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
G01N 21/3586 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
A test system for testing a device having a plurality of electrical contacts. The test system comprising: a device table operable to hold at least one device under test, a probe comprising at least one probe end for contacting electrical contacts of a device under test, a movement mechanism operable to move one or both of the device table and the probe so as to bring the at least one probe end into contact with at least one electrical contact of a device under test, and a profile determining system configured to determine a profile of the electrical contacts of a device under test.
A reflectometer for allowing a test of a device, the reflectometer comprising: a source of pulsed radiation; a first photoconductive element configured to output a pulse in response to irradiation from the pulsed source; a second photoconductive element configured to receive a pulse; and a transmission line arrangement configured to direct the pulse from the first photoconductive element to the device under test and to direct the pulse reflected from the device under test to the second photoconductive element. At least one of the first and second photoconductive elements is provided on a different substrate to that of the transmission line arrangement.
A method for determining the thickness of a plurality of coating layers. The method comprises the steps of performing a calibration analysis on calibration data to determine initial values and search limits of optical parameters of the plurality of coating layers, irradiating the plurality of layers with a pulse of THz radiation in the range from 0.01 THz to 10 THz, detecting the reflected radiation to produce a sample response derived from the reflected radiation, producing a synthesized waveform using the optical parameters and predetermined initial thicknesses of the layers, varying the thicknesses and the optical parameters within the search limits to minimize the error measured between the sample response and the synthesized waveform, and outputting the thicknesses of the layers.
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
A method for determining the thickness of a plurality of coating layers, the method comprising: performing a calibration analysis on calibration data to determine initial values and search limits of optical parameters of said plurality of coating layers, irradiating the said plurality of layers with a pulse of THz radiation, said pulse comprising a plurality of frequencies in the range from 0.01 THz to 10 THz; detecting the reflected radiation to produce a sample response said sample response being derived from the reflected radiation; producing a synthesised waveform using the optical parameters and predetermined initial thicknesses of said layers; and varying said thicknesses and varying said optical parameters within the said search limits to minimise the error measured between the sample response and the synthesised waveform; and outputting the thicknesses of the layers.
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
A transmission line arrangement having a first end and a second end, the transmission line arrangement being configured to transmit a signal between the first end and the second end, the transmission line arrangement comprising a signal conductor extending between the first end and the second end of the transmission line arrangement, a first conducting sheet and a second conducting sheet positioned on two opposing sides of the signal conductor, an insulating material separating the first and second conducting sheets from the signal conductor and a plurality of pieces of conducting material extending between the first and second conducting sheets and arranged at different positions between the first and second ends of the transmission line arrangement, wherein the pieces of conducting material and the conducting sheets are arranged to substantially surround the signal conductor for at least part of its length between the first and second ends of the transmission line arrangement.
G01R 31/00 - Arrangements for testing electric propertiesArrangements for locating electric faultsArrangements for electrical testing characterised by what is being tested not provided for elsewhere
G01R 31/308 - Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
A test system for testing a device having a plurality of electrical contacts. The test system comprising: a device table operable to hold at least one device under test, a probe comprising at least one probe end for contacting electrical contacts of a device under test, a movement mechanism operable to move one or both of the device table and the probe so as to bring the at least one probe end into contact with at least one electrical contact of a device under test, and a profile determining system configured to determine a profile of the electrical contacts of a device under test.
G01R 31/00 - Arrangements for testing electric propertiesArrangements for locating electric faultsArrangements for electrical testing characterised by what is being tested not provided for elsewhere
G01R 31/308 - Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
G01R 35/00 - Testing or calibrating of apparatus covered by the other groups of this subclass
A reflectometer for allowing a test of a device. The reflectometer comprises a source of pulsed radiation, a first photoconductive element configured to output a pulse in response to irradiation from the pulsed source, a second photoconductive element configured to receive a pulse, a transmission line arrangement configured to direct the pulse from the first photoconductive element to the device under test and to direct the pulse reflected from the device under test to the second photoconductive element, and a termination resistance provided for the transmission line configured to match the impedance of the transmission line.
A method for determining the thickness of a plurality of coating layers, the method comprising: performing a calibration analysis on calibration data to determine initial values and search limits of optical parameters of said plurality of coating layers, irradiating the said plurality of layers with a pulse of THz radiation, said pulse comprising a plurality of frequencies in the range from 0.01 THz to 10 THz; detecting the reflected radiation to produce a sample response said sample response being derived from the reflected radiation; producing a synthesised waveform using the optical parameters and predetermined initial thicknesses of said layers; and varying said thicknesses and varying said optical parameters within the said search limits to minimise the error measured between the sample response and the synthesised waveform; and outputting the thicknesses of the layers.
G01B 11/06 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness for measuring thickness
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
A transmission line arrangement having a first end and a second end, the transmission line arrangement being configured to transmit a signal between the first end and the second end, the transmission line arrangement comprising a signal conductor extending between the first end and the second end of the transmission line arrangement, a first conducting sheet and a second conducting sheet positioned on two opposing sides of the signal conductor, an insulating material separating the first and second conducting sheets from the signal conductor and a plurality of pieces of conducting material extending between the first and second conducting sheets and arranged at different positions between the first and second ends of the transmission line arrangement, wherein the pieces of conducting material and the conducting sheets are arranged to substantially surround the signal conductor for at least part of its length between the first and second ends of the transmission line arrangement.
A test system for testing a device having a plurality of electrical contacts. The test system comprising: a device table operable to hold at least one device under test, a probe comprising at least one probe end for contacting electrical contacts of a device under test, a movement mechanism operable to move one or both of the device table and the probe so as to bring the at least one probe end into contact with at least one electrical contact of a device under test, and a profile determining system configured to determine a profile of the electrical contacts of a device under test.
A reflectometer for allowing a test of a device, the reflectometer comprising: a source of pulsed radiation; a first photoconductive element configured to output a pulse in response to irradiation from said pulsed source; a second photoconductive element configured to receive a pulse; a transmission line arrangement configured to direct the pulse from the first photoconductive element to the device under test and to direct the pulse reflected from the device under test to the second photoconductive element; and a termination resistance provided for said transmission line configured to match the impedance of the transmission line.
A reflectometer for allowing a test of a device, the reflectometer comprising: a source of pulsed radiation; a first photoconductive element configured to output a pulse in response to irradiation from said pulsed source; a second photoconductive element configured to receive a pulse; a transmission line arrangement configured to direct the pulse from the first photoconductive element to the device under test and to direct the pulse reflected from the device under test to the second photoconductive element; and a termination resistance provided for said transmission line configured to match the impedance of the transmission line.
A THz radiation probe (1) for examining an object (8), the probe comprising a first portion configured to be inserted into an opening of said object in a first direction (5), said probe further comprising at least one THz emitter (15), directing means (7) for directing THz radiation emitted from said emitter to said object via an aperture (2) located at said first portion and subsequently from said object to at least one THz detector (17) and, means for scanning said emitted THz radiation across said object in a scan direction, said scan direction having a component in said first direction (5).
A61B 5/00 - Measuring for diagnostic purposes Identification of persons
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
A61B 1/00 - Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopesIlluminating arrangements therefor
A method of performing dissolution analysis on a tablet, the method comprising: irradiating a tablet with radiation having at least one frequency in the range from 40 GHz to 100 THz; detecting radiation which has been transmitted through or reflected by the tablet; determining a parameter from the detected radiation indicative of the density of a coating layer of the tablet; and determining information about the dissolution characteristics of the tablet from said parameter.
G01N 21/3581 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
G01N 21/3563 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solidsPreparation of samples therefor
A system for investigating a plurality of samples having varying positions or orientations moving with respect to the system, the system including an emitter of terahertz radiation for irradiating a sample provided in a sample space; a detector of terahertz radiation configured to detect radiation reflected from said sample space; and determining means to determine if radiation reflected from said sample space is from a sample with a predetermined orientation in the sample space.
A THz radiation probe (1) for examining an object (8), the probe comprising a first portion configured to be inserted into an opening of said object in a first direction (5), said probe further comprising at least one THz emitter (15), directing means (7) for directing THz radiation emitted from said emitter to said object via an aperture (2) located at said first portion and subsequently from said object to at least one THz detector (17) and, means for scanning said emitted THz radiation across said object in a scan direction, said scan direction having a component in said first direction (5).
A method of performing dissolution analysis on a tablet, the method comprising: irradiating a tablet with radiation having at least one frequency in the range from 40GHz to l00THz; detecting radiation which has been transmitted through or reflected by the tablet; determining a parameter from the detected radiation indicative of the density of a coating layer of the tablet; and determining information about the dissolution characteristics of the tablet from said parameter.
G01N 21/35 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
G01N 22/00 - Investigating or analysing materials by the use of microwaves or radio waves, i.e. electromagnetic waves with a wavelength of one millimetre or more
B30B 11/00 - Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses or tabletting presses
26.
A METHOD AND APPARATUS FOR IMAGING AN LCD USING TERAHERTZ TIME DOMAIN SPECTROSCOPY
A method configured to investigate an LCD structure, the method comprising: irradiating an LCD structure with pulsed radiation having at least one frequency in the range from 40GHz to 100THz; detecting radiation which has been transmitted through or reflected by the structure; determining information about the structure by measuring a quantity at least related to the amplitude of the detected radiation.
G01N 21/35 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
G02F 1/13 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
Imaging techniques of pharmaceutical preparations such as tablets are disclosed. The techniques combine the measurement of reflected/transmitted terahertz radiation originating from within the tablet and data analysis localized in frequency and time in order to enable a three dimensional image indicating composition to be obtained.
G01N 21/3586 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared lightInvestigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
G01N 21/3563 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solidsPreparation of samples therefor
G06G 7/58 - Analogue computers for specific processes, systems, or devices, e.g. simulators for chemical processes
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
40 - Treatment of materials; recycling, air and water treatment,
Goods & Services
imaging equipment in the nature of imagers imaging equipment in the nature of imagers for medical purposes; spectrometers treatment of materials by use of terahertz radiation and terahertz pulse imaging for medical and analytical purposes
09 - Scientific and electric apparatus and instruments
10 - Medical apparatus and instruments
38 - Telecommunications services
39 - Transport, packaging, storage and travel services
40 - Treatment of materials; recycling, air and water treatment,
42 - Scientific, technological and industrial services, research and design
Goods & Services
Scientific, surveying, optical and measuring apparatus and instruments; imaging equipment; equipment for analysing chemical, biochemical and biomedical contents and composition of materials, substances, tissue and environments. Surgical, medical, dental and veterinary apparatus and instruments; medical, dental and veterinary diagnostic equipment and apparatus; imaging equipment for surgical, medical, dental and veterinary purposes; radiological apparatus for surgical, medical, dental and veterinary purposes; apparatus for use in surgical, medical, dental and veterinary analysis. Telecommunications, telecommunication of information (including web-pages), computer programs and any other data; electronic mail services. Transport, packaging and storage of goods; information on the aforementioned services provided on-line from a computer database or from a global computer network. Treatment of materials; treatment of materials for surgical, medical, dental and veterinary diagnostic and analytical purposes, and for the purpose of analysing chemical, biochemical and biomedical contents and composition of materials, substances, tissue and environments; information on the aforementioned services provided on-line from a computer database or from a global computer network. Medical, hygienic and veterinary services; scientific, medical and biological research in the field of analysing chemical, biochemical and biomedical contents and composition of materials, substances, tissue and environments; information on the aforementioned services provided on-line from a computer database or from a global computer network; creating and maintaining web-sites.
