A method includes receiving a histogram output from a detector sensor, and calculating a median point of a pulse waveform within the histogram. The pulse waveform has an even probability distribution over at least one quantization step of the histogram around the median point. A corresponding apparatus can include a detector sensor and a co-processor coupled to the detector sensor.
A single-pass method for identifying peaks in a time of flight histogram, the single-pass method including conducting an ordered comparison of each bin with an adaptive threshold until finding a bin that exceeds the adaptive threshold; enabling peak tracking in response to finding the bin that exceeds the adaptive threshold; in response to enabling peak tracking, continuing the ordered comparison of each bin with the adaptive threshold until finding a bin that falls below the adaptive threshold; and in response to finding the bin that falls below the adaptive threshold, marking a peak location between the bin exceeding the adaptive threshold and the bin that falls below the adaptive threshold.
STMICROELECTRONICS RESEARCH & DEVELOPMENT) LIMITED (United Kingdom)
Inventor
Raynor, Jeffrey M.
Moeneclaey, Nicolas
Abstract
The present disclosure relates to a sensor having pixels, each pixel having photodiodes having each a terminal coupled to a first node associated with the photodiode; and an amplifier having a first part and, for each photodiode, a second part associated with the photodiode. The first part includes an output of the amplifier and a first MOS transistor of a differential pair. Each second part includes a second MOS transistor of the differential pair having its gate coupled to the first node associated with the photodiode the second part is associated with; a first switch coupling a source of the second transistor to the first part of the amplifier; and a second switch coupling a drain of the second transistor to the first part of the amplifier.
The present disclosure relates to an image sensor that includes first and second pixels. One or more transistors of the first pixel share an active region with one or more transistors of the second pixel.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
A single photon avalanche diode (SPAD) pixel circuit includes a SPAD, a clamping transistor coupled to the anode of the SPAD, and readout circuitry. The clamping transistor limits the anode voltage to a threshold below the readout circuitry's maximum operating voltage. In one embodiment, quenching and enabling transistors are implemented using single-layer gate oxide technology, while the clamping transistor uses extended drain technology. A regulation circuit generates a voltage clamp control signal for an array of pixels. Another embodiment utilizes a stacked chip design with the SPAD and a cathode-side quenching element on one chip, and the clamping transistor and readout circuitry on another. This incorporates a parasitic capacitance from deep trench isolation. Additional biasing transistors may be used for fine-tuning the clamped anode voltage. The described embodiments allow for reduced power consumption, and compatibility with low-voltage readout circuitry while maintaining high-speed operation and adjustable quenching characteristics.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
In an embodiment, an optoelectronic device includes a light source and an array of pixels. Each pixel of the array is configured to detect an amount of return light falling in each of a subset of time intervals that form a detection time window of the pixel. A time window position code generator is configured to generate a sequence of time window position codes. Each pixel includes a memory configured to store a first reference time window position associated with the pixel, a time window code comparator configured to compare a first time window position code of the sequence with the first reference time window position, and a timing sequence generator configured to generate, when the comparison indicates a match, a time window control signal configured to activate the detection of the return light during a detection time window selected by the time window control signal.
A method includes estimating first distance values associated with a plurality of first pixels, based on light pulses of a first light pulse train having a first period, estimating second distance values associated with a plurality of second pixels, the second distance values being estimated for each second pixel based on a second light pulse train having a second period different from the first period, for each of the first pixels being adjacent to one of the second pixels, validating or invalidating the first distance values, based on a comparison between the estimations of the first distance value and at least one of the second distance values of at least one second adjacent pixel, and storing an indication of the first pixels having been validated and/or invalidated.
A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant. The first doped region is shaped so as to incorporate local variations in concentration of dopants that are configured, in response to a voltage between the second doped region and the semiconductor well that is greater than or equal to a level of a breakdown voltage of the PN junction, to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well.
H10F 30/225 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
H10F 77/14 - Shape of semiconductor bodiesShapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
10.
Ambient light sensor having common centroid layout
A common centroid ambient light sensor includes a matrix of photodiodes having exactly a first row and a second row, at least three color channels, a readout circuit of the first color channel connected to exactly one photodiode in the first row and exactly one photodiode in the second row, and a readout circuit of the second color channel connected to exactly one photodiode in the first row and exactly one photodiode in the second row.
A pixel includes a SPAD having a cathode connected to a first node and an anode coupled to a first negative voltage, and a transistor circuit coupled between a supply voltage and a third node, that turns on in response to an enable signal. A cascode transistor connected between the third node and the first node is controlled by a cascode control signal. A cathode setting capacitor is connected between the first node and ground. A readout inverter is coupled between the intermediate node and an output node and generates an output signal. Turn-on of the transistor circuit sources current from the supply voltage node to the cathode setting capacitor, setting a reverse bias voltage across the SPAD to greater than its breakdown voltage. A photon impinging upon the SPAD cause avalanche of the SPAD which, when occurring after turn off of the transistor circuit, discharges the cathode setting capacitor.
An array of single photon avalanche diodes (SPADs) includes a plurality of pixels. Each pixel includes a SPAD having a cathode connected to a first intermediate node and an anode coupled to first negative voltage, a quench circuit connected between the first intermediate node and the low voltage supply node, an AC coupling element connected between the first intermediate node and a second intermediate node, a filter component connected between the high voltage node and the second intermediate node, and an inverter having its input connected to the second intermediate node and its output providing an output signal. A resistance associated with the quench circuit, a capacitance associated with the SPAD, a capacitance associated with the AC coupling element, and a resistance associated with the filter component form a variable second order filter.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
13.
Active recharge quenching circuit for negative bias SPAD
Disclosed herein is a single photon avalanche diode (SPAD) pixel for use in time-of-flight imaging. This pixel includes a SPAD having a cathode connected to a first node and an anode coupled to first negative voltage. A transistor circuit in the pixel includes a quench transistor connected between a supply voltage node and a second node, the quench transistor controlled by a quench control signal to operate in a high-impedance mode, and a recharge transistor connected in parallel with the quench transistor between the supply voltage node and the second node, the recharge transistor controlled by a feedback signal. The pixel also includes a readout inverter generating an output signal based upon a voltage at the first node and an adjustable delay circuit generating the feedback signal based upon the output signal, the feedback signal being delayed with respect to the output signal.
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
H10F 30/225 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
In an embodiment, a method includes: receiving a first plurality of digital codes from a time-to-digital converter (TDC); generating a coarse histogram from the first plurality of digital codes; detecting a peak coarse bin from the plurality of coarse bins; after receiving the first plurality of digital codes, receiving a second plurality of digital codes from the TDC; and generating a fine histogram from the second plurality of digital codes based on the detected peak coarse bin, where a fine histogram depth range is narrower than a coarse histogram depth range, where a lowest fine histogram depth is lower or equal to a lowest coarse peak depth, and where a highest fine histogram depth is higher or equal to a highest coarse peak depth.
G01S 7/4865 - Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
G01S 17/10 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
G01S 17/89 - Lidar systems, specially adapted for specific applications for mapping or imaging
15.
METHOD FOR GATING AN OUTPUT OF A SINGLE PHOTON AVALANCHE DIODE (SPAD) CLUSTER BASED ON AN AMBIENT COUNT OF AMBIENT LIGHT EVENTS GENERATED BY THE SPAD CLUSTER IN A REGION OF INTEREST OF A TIME OF FLIGHT (TOF)
In an embodiments, a method for operating a time-of-flight (ToF) ranging array includes: illuminating a field-of-view (FoV) of the ToF ranging array with radiation pulses; receiving reflected radiation pulses with a plurality of single photon avalanche diodes (SPADs) in a region of interest (ROI) of the ToF ranging array, the plurality of SPADs arranged in a plurality of SPAD clusters; determining an ambient count of ambient light events generated by SPADs of a first SPAD cluster of the plurality of SPAD clusters; and gating an output of the first SPAD cluster based on the ambient count.
G01S 17/18 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein range gates are used
A system-on-a-chip (SOC) within a package includes a reference generator, a matching circuit, a programmable current generator, a PWM controller, an overvoltage/undervoltage detector receiving a high voltage from a third output pad, a multiplexer passing an input signal to a second output pad, and a SPAD receiving the high voltage. Switching circuitry includes a first switch between the reference generator and an input of the programmable current generator, a second switch between the input of the current generator and the output of the matching circuit, a third switch between the reference generator and an input of the matching circuit, a fourth switch between an output of the current generator and a tap of a ladder within the overvoltage/undervoltage detector, a fifth switch between an output of the current generator and the first output pad, and a sixth switch between the output of the PWM controller and the first output pad.
An optical ranging system includes: a first phase-locked loop (PLL) configured to generate a first frequency signal and a second frequency signal; a second PLL configured to generate a third frequency signal based on a control signal that is formed using the first frequency signal; an optical source coupled to the second PLL, where an intensity of an optical signal emitted by the optical source is configured to be modulated in accordance with the third frequency signal; a first single-photon avalanche diode (SPAD) configured to receive a reflected optical signal; a time-to-digital converter (TDC) coupled to the first SPAD, where the TDC is configured to generate digital samples by sampling an output signal of the first SPAD under control of the second frequency signal; a reference signal generator configured to generate a reference signal; and a mixer configured to mix the reference signal and the digital samples from the TDC.
An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.
H10F 30/225 - Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
H10F 39/00 - Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group , e.g. radiation detectors comprising photodiode arrays
An apparatus comprises an array of vertical-cavity surface-emitting lasers. Each of the vertical-cavity surface-emitting lasers is configured to be a source of light. The apparatus also comprises an optical arrangement configured to receive light from a plurality of the vertical-cavity surface-emitting lasers and to output a plurality of light beams.
The present disclosure is directed to a device configured to act as a flood illuminator and a dot projector. The device utilizes a dual channel light source configured to switch between first and second polarizations, and a polarization sensitive metaoptic that outputs dot projection and flood illumination in response to receiving the first polarization and the second polarization, respectively.
F21Y 105/16 - Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the overall shape of the two-dimensional array square or rectangular, e.g. for light panels
G06V 10/145 - Illumination specially adapted for pattern recognition, e.g. using gratings
G06V 40/16 - Human faces, e.g. facial parts, sketches or expressions
The present disclosure is directed to a three-dimensional interactive display system. The system detects a position of a user (e.g., the user's finger or hand) or an optical emitter device, along three different dimensions. In a case where the system detects a position of a user's finger, the user wears a passive device having angled surfaces on his or her finger to improve detection of the user's finger. In a case where the system detects the optical emitter device, the user holds the optical emitter device or wears the optical emitter device similar to the passive device. The optical emitter device emits light, and the system tracks the optical emitting device by detecting the light emitted by the optical emitter device.
An example method, to determine time of flight for light detection and ranging, includes enabling a time to digital converter; emitting a light pulse after enabling the time to digital converter; initiating a sampling window at a time of emission of the light pulse; using the time to digital converter to determine times of flight for photons detected during the sampling window; initiating a blanking period in response to concluding the sampling window; and disabling the time to digital converter in response to initiation of the blanking period.
A method includes receiving a histogram output from a detector sensor, and calculating a median point of a pulse waveform within the histogram. The pulse waveform has an even probability distribution over at least one quantization step of the histogram around the median point. A corresponding apparatus can include a detector sensor and a co-processor coupled to the detector sensor.
A differential correlator filter includes: a pre-pulse region, where first filter coefficients in the pre-pulse region have negative values; and a pulse region including: a rising edge region adjacent to the pre-pulse region, where second filter coefficients in the rising edge region have positive values; an accumulation region adjacent to the rising edge region, where third filter coefficients of the accumulation region have positive values; and a falling edge region adjacent to the accumulation region, where fourth filter coefficients of the falling edge region have positive values, where the accumulation region is between the rising edge region and the falling edge region. The differential correlator filter further includes a post-pulse region adjacent to the pulse region, where the pulse region is between the pre-pulse region and the post-pulse region, where fifth filter coefficients of the post-pulse region have negative values.
A device includes a single photon avalanche diode in a portion of a substrate, wherein the portion has an octagonal profile. The octagonal profile is delimited by a wall forming an octagonal contour around the portion. The device further includes an array of diodes, wherein each diode is located in a corner between four adjacent single photon avalanche diodes. Each single photon avalanche diode further includes a doped anode region. A shallow trench isolation is formed in each doped anode region. A polysilicon line forming a resistor is supported at the upper surface of the shallow trench isolation.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
26.
Optical sensor and apparatus comprising an optical sensor
An optical sensor includes pixels. Each pixel has a photodetector. A readout circuit performs a process over an exposure time where the photodetector is connected to a reverse bias voltage supply to reset a voltage across the photodetector, and the photodetector is disconnected from the reverse bias voltage supply until that the voltage across the photodetector decreases in response to received ambient light. An ambient light level is then determine an based on a number of times the voltage across the photodetector is reset over the exposure time.
A device includes a single photon avalanche diode in a substrate and a resistor. The resistor is provided resting on an insulating trench located in a doped anode region of the single photon avalanche diode.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
A method includes dividing a field of view into a plurality of zones and sampling the field of view to generate a photon count for each zone of the plurality of zones, identifying a focal sector of the field of view and analyzing each zone to select a final focal object from a first prospective focal object and a second prospective focal object.
An optical element is positioned in a holder over a laser light source. The optical element includes an electrical trace that is coupled between first and second pads. A sensing circuit that is also coupled to the first and second pads performs a voltage/current sensing operation to detect displacement of the optical element and control enablement of the laser light source.
A time-of-flight system includes an emitter-circuit generating and directing pulses of light toward a target, and a receiver-circuit including a photodetector coupled between a bias node and a sensing node to detect pulses that have reflected off the target, a comparison circuit comparing a sense voltage at the sensing node to a reference, a timing measurement circuit measuring elapsed time between generation of a given pulse and detection thereof after reflection off the target, and a programmable current sink that sinks a current from the sensing node equal to a portion of a photocurrent generated by the photodetector due to detection of ambient light. A timing-generation circuit synchronizes generation of the pulses and measurement of elapsed time by the timing circuit. A processor adjusts a magnitude of the current sunk from the sensing node based upon output of the comparison circuit when the emitter circuit is deactivated.
This disclosure relates to a time-of-flight sensor including, on a same base substrate, a light emitter configured to emit light into an image scene, a reference sensor configured to detect light emitted by the light emitter, and a signal reception sensor array separated from the light emitter by an optical barrier. The optical barrier is configured to prevent light emitted by the light emitter from directly reaching the signal reception sensor array, with the signal reception sensor array being configured to detect light reflected by the image scene. The reference sensor and the signal reception sensor array are based on semiconductor nanoparticles.
An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
Various embodiments provide an optical lens that includes wafer level diffractive microstructures. In one embodiment, the optical lens includes a substrate, a microstructure layer having a first refractive index, and a protective layer having a second refractive index that is different from the first refractive index. The microstructure layer is formed on the substrate and includes a plurality of diffractive microstructures. The protective layer is formed on the diffractive microstructures. The protective layer provides a cleanable surface and encapsulates the diffractive microstructures to prevent damage and contamination to the diffractive microstructures. In another embodiment, the optical lens includes a substrate and an anti-reflective layer. The anti-reflective layer is formed on the substrate and includes a plurality of diffractive microstructures.
An input stage circuit for a sigma-delta analog-to-digital converter circuit receives a digital-to-analog converter generated feedback signal and an analog current input signal to generate a difference signal applied to an integrator circuit. A single bit quantization circuit quantizes an output of the integrator circuit to generate a bit signal that is applied to an input of the digital-to-analog converter. The input stage circuit includes a switched input capacitor controlled by first and second, non-overlapping, clock signals.
In a method, substrate elements are provided wherein each substrate element has a first side and a second side meeting at a corner point. The substrate elements are picked and then placed on a support device in alignment. A cutting operation is then performed where each of the substrates elements are cut along a cut line having a common first direction which intersects the first and second sides of each of the substrate elements in order to create a third side on each substrate element. The third side of each of the substrate elements meets the first and the second sides at corresponding corner points.
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
36.
Methods and devices for identifying peaks in histograms
A single-pass method for identifying peaks in a time of flight histogram, the single-pass method including conducting an ordered comparison of each bin with an adaptive threshold until finding a bin that exceeds the adaptive threshold; enabling peak tracking in response to finding the bin that exceeds the adaptive threshold; in response to enabling peak tracking, continuing the ordered comparison of each bin with the adaptive threshold until finding a bin that falls below the adaptive threshold; and in response to finding the bin that falls below the adaptive threshold, marking a peak location between the bin exceeding the adaptive threshold and the bin that falls below the adaptive threshold.
The present disclosure is directed to a fluidic ejection device configured to detect whether one or more nozzles of the fluidic ejection device is in a normal state, a blocked nozzle state, or an accumulated fluid state. The fluidic ejection device includes an optical blockage detector having a light emitting device configured to emit a light signal, and a light sensor configured to detect the light signal. The optical blockage detector detects the normal state, the blocked nozzle state, and the accumulated fluid state based on the detected light signal.
A system to sample light including an array of light-sensitive pixels and a content display. The content display includes an array of content-display pixels; and an array of masking pixels individually selectable to switch between an opaque state and a transparent state, the array of masking pixels being aligned with the array of light-sensitive pixels so light-sensitive pixels may be selected to receive light passing through the content display by selecting the states of the array of masking pixels.
The present disclosure relates to a secondary device comprising a first port receiving a clock signal from a first port of a primary device and a second port connected to a second port of the primary device. The clock signal determines, for each bit transmission, first, second, third and fourth successive phases. The secondary device puts its second port in a high impedance state during the first, second and fourth phases of each bit transmission. During the third phase of each transmission of a bit of data from the secondary device to the primary device, the secondary device discharges its second port when the transmitted bit has a first value and leaves its second port in a high impedance state when the transmitted bit has a second value.
An electronic device includes a carrier substrate having a front face. An electronic chip is mounted on the front face of the carrier substrate and includes an optical component. An encapsulation cover is mounted on top of the front face of the carrier substrate and bounds a chamber within which the chip is situated. A front opening extends through the cover and is situated in front of the optical component. An optical element, designed to allow light to pass, is mounted within the chamber at a position which covers the front opening of the encapsulation cover. The optical element includes a central region designed to deviate the light and having an optical axis aligned with the front opening and the optical component. A positioning pattern is provided on the optical element to assist with mounting the optical element to the cover and mounting the cover to the carrier substrate.
In accordance with an embodiment, a system includes: a primary device configured to be connected to at least one secondary device via serial bus having a data wire and a clock wire. The primary device is configured to: provide a clock signal on the clock wire; and transmit a frame comprising control bits on the serial bus, wherein a number of control bits transmitted on the serial bus at at least one location of the frame indicates a format of the frame.
An imaging device includes a sensor array with a number of pixels. In an embodiment, the imaging device can be operated by capturing a first low-spatial resolution frame using a subset of pixels of the sensor array and then capturing a second low-spatial resolution frame using the same subset of pixels of the sensor array. A first depth map is generated using raw pixel values of the first low-spatial resolution frame and a second depth map is generated using raw pixel values of the second low-spatial resolution frame. The first depth map can be compared to the second depth map to determine whether an object has moved in a field of view of the imaging device.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
G06T 7/579 - Depth or shape recovery from multiple images from motion
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
The present disclosure relates to an assembly for an electronic device, the assembly comprising: a display screen comprising a plurality of pixels arranged in a matrix scheme comprising rows orientated in a first direction and columns orientated in a second direction; and a proximity sensor comprising at least one optical light emitter, each adapted to emit a light beam through one or more first pixels of the display screen, and an optical detector adapted to receive through one or more second pixels of the display screen the light beam emitted by the at least one optical light emitter and reflected on an object; wherein none of the one or more second pixels is in the same row as any of the one or more first pixels, and none of the one or more second pixels is in the same column as any of the one or more first pixels.
A method for enhancing an image and an image enhancement device are described. The method for enhancing an image including: capturing an initial image including a plurality of pixels, and performing a pixel-by-pixel dehazing operation for each of the plurality of pixels. The performing including: generating, for each of the plurality of pixels, a value for a blended gray image based on color channels of the pixel, generating, for each of the plurality of pixels, a value for a transmission map based on the blended gray image, and generating, for each of the plurality of pixels, output color channels for a processed image based on the value for the transmission map, the processed image being an enhancement of the initial image.
H04N 23/71 - Circuitry for evaluating the brightness variation
G06T 5/50 - Image enhancement or restoration using two or more images, e.g. averaging or subtraction
H04N 9/64 - Circuits for processing colour signals
H04N 9/77 - Circuits for processing the brightness signal and the chrominance signal relative to each other, e.g. adjusting the phase of the brightness signal relative to the colour signal, correcting differential gain or differential phase
An apparatus comprises an array of vertical-cavity surface-emitting lasers. Each of the vertical-cavity surface-emitting lasers is configured to be a source of light. The apparatus also comprises an optical arrangement configured to receive light from a plurality of the vertical-cavity surface-emitting lasers and to output a plurality of light beams.
An embodiment method of measuring ambient light comprises generating, by an ambient light sensor associated with a screen which alternates between first phases in which light is emitted and second phases in which no light is emitted by the screen, a first signal representative of an intensity of light received by the ambient light sensor during the first and second phases; comparing the first signal with a threshold intensity value; and controlling a timing of an ambient light measurement by the light sensor based on the comparison.
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
A method includes dividing a field of view into a plurality of zones and sampling the field of view to generate a photon count for each zone of the plurality of zones, identifying a focal sector of the field of view and analyzing each zone to select a final focal object from a first prospective focal object and a second prospective focal object.
A sensing pixel includes a single photon avalanche diode (SPAD) coupled between a first node and a second node, with a clamp diode being coupled between a turn-off voltage node and the second node. A turn-off circuit includes a sense circuit configured to generate a feedback voltage based upon a voltage at the turn-off voltage node, a transistor having a first conduction terminal coupled to the turn-off voltage node, a second conduction terminal coupled to ground, and a control terminal, and an amplifier having a first input coupled to a reference voltage, a second input coupled to receive the feedback voltage, and an output coupled to the control terminal of the transistor. A readout circuit is coupled to the SPAD by a decoupling capacitor.
An imaging sensor includes a pixel array containing photodiodes, the photodiodes being isolated from one another by full thickness deep trench isolations. Row control circuitry controls which rows of the pixel array operate in an imaging mode and which rows of the pixel array operate in an energy harvesting mode, on a row-by-row basis. Switch circuitry selectively connects different groups of photodiodes in rows operating in the energy harvesting mode into forward biased series configurations between a voltage output line and a ground line, or into forward biased parallel configurations between the voltage output line and the ground line. In the forward biased series configurations, the cathode of at least one photodiode of a given group of photodiodes is directly electrically connected to ground.
In an embodiment an apparatus includes a scanning photographic sensor configured to acquire an image, according to an integration time of the sensor, of a scene illuminated with periodically emitted light pulses by a source, so that the image has a regular succession of bands with different luminosities when the integration time of the sensor is different from a period of the light pulses, a processor configured to generate a signature vector representative of the regular succession of bands with different luminosities being present in the image acquired by the photographic sensor, wherein the signature vector is independent of a reflectance of an objects of the scene and of a level of light in the scene, determine a frequency of the bands in the image on basis of the generated signature vector and determine the period of the pulses of the source on basis of the determined frequency of the bands in the image, and a controller configured to adjust the integration time of the photographic sensor so that the integration time is a multiple of the determined period of the light pulses of the source.
H04N 23/73 - Circuitry for compensating brightness variation in the scene by influencing the exposure time
H04N 23/76 - Circuitry for compensating brightness variation in the scene by influencing the image signals
51.
Method for gating an output of a single photon avalanche diode (SPAD) cluster based on an ambient count of ambient light events generated by the SPAD cluster in a region of interest of a time of flight (TOF) ranging array
In an embodiments, a method for operating a time-of-flight (ToF) ranging array includes: illuminating a field-of-view (FoV) of the ToF ranging array with radiation pulses; receiving reflected radiation pulses with a plurality of single photon avalanche diodes (SPADs) in a region of interest (ROI) of the ToF ranging array, the plurality of SPADs arranged in a plurality of SPAD clusters; determining an ambient count of ambient light events generated by SPADs of a first SPAD cluster of the plurality of SPAD clusters; and gating an output of the first SPAD cluster based on the ambient count.
G01S 17/18 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein range gates are used
Described herein is an electronic device, including a pixel and a turn-off circuit. The pixel includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage node and an anode selectively coupled to ground through an enable circuit, and a clamp diode having an anode coupled to the anode of the SPAD and a cathode coupled to a turn-off voltage node. The turn-off circuit includes a sense circuit coupled between the turn-off voltage node and ground and configured to generate a feedback voltage, and a regulation circuit configured to sink current from the turn-off voltage node to ground based upon the feedback voltage such that a voltage at the turn-off voltage node maintains generally constant.
In an embodiment, a method includes: resetting respective count values of a plurality of analog counters to an initial count value, each analog counter of the plurality of analog counters corresponding to a histogram bin of a time-of-flight (ToF) histogram; after resetting the respective count values, receiving a plurality of digital addresses from a time-to-digital converter (TDC); during an integration period, for each received digital address, selecting one analog counter based on the received digital address, and changing the respective count value of the selected one analog counter towards a second count value by a discrete amount, where each analog counter has a final count value at an end of the integration period; and after the integration period, determining an associated final bin count of each histogram bin of the ToF histogram based on the final count value of the corresponding analog counter.
G01S 7/4863 - Detector arrays, e.g. charge-transfer gates
G01S 7/4914 - Detector arrays, e.g. charge-transfer gates
G01S 7/4915 - Time delay measurement, e.g. operational details for pixel componentsPhase measurement
G01S 17/10 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
G01S 17/14 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein a voltage or current pulse is initiated and terminated in accordance with the pulse transmission and echo reception respectively, e.g. using counters
G01S 17/36 - Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G06T 7/521 - Depth or shape recovery from laser ranging, e.g. using interferometryDepth or shape recovery from the projection of structured light
G06T 7/70 - Determining position or orientation of objects or cameras
H03M 1/34 - Analogue value compared with reference values
54.
APPARATUS AND METHOD FOR A DISPLAY SCREEN AND AN OPTICAL LIGHT EMITTER
The present disclosure relates to an assembly for an electronic device comprising: a display screen; an optical light emitter adapted to emit an Infrared or near Infrared light beam through the display screen; the optical light emitter and the display screen being of the type that, when an unpolarized light beam from the optical light emitter passes through a region of the display screen, a white spot of a first intensity is formed in the region; a light polarizer positioned between the optical light emitter and the display screen, the light polarizer being orientated such that a white spot of a second intensity, lower than the first intensity, is formed when the light beam, from the optical light emitter and polarized by the light polarizer, passes through the region of the display screen.
A photonic device includes a PCB having an integrated circuit mounted thereon, with a cap mounted to the PCB and carrying a lens positioned over the integrated circuit. The cap is formed by: an outer wall mounted to the PCB, extending upwardly from the PCB, and surrounding a portion of the integrated circuit; a first retention structure extending inwardly from the outer wall and across the integrated circuit, the first retention structure having a hole defined therein; and a second retention structure having a hole defined therein, the second retention structure being affixed within the first retention structure such that the hole in the second retention structure is axially aligned with the hole in the first retention structure. The lens is mechanically constrained within the cap between the first retention structure and the second retention structure.
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
A ToF sensor includes an array of pixels having first and second subsets of pixels, first and second pluralities of TDCs, a routing bus having first and second pluralities of bus drivers, and a controller configured to: when the first subset of pixels is active and the second subset of pixels is not active, control the first plurality of bus drivers to route events from half of the pixels of the first subset to the first plurality of TDCs and control the first and second pluralities of bus drivers to route events from the other half of the pixels of the first subset to the second plurality of TDCs, and when the first subset of pixels is not active and the second subset of pixels is active, control the first plurality of bus drivers to route events from the second subset of pixels to the first plurality of TDCs.
The present disclosure relates to a sensor having pixels, each pixel having photodiodes having each a terminal coupled to a first node associated with the photodiode; and an amplifier having a first part and, for each photodiode, a second part associated with the photodiode. The first part includes an output of the amplifier and a first MOS transistor of a differential pair. Each second part includes a second MOS transistor of the differential pair having its gate coupled to the first node associated with the photodiode the second part is associated with; a first switch coupling a source of the second transistor to the first part of the amplifier; and a second switch coupling a drain of the second transistor to the first part of the amplifier.
An optical sensor includes at least one photodetector configured to be reverse biased at a voltage exceeding a breakdown voltage by an excess bias voltage. At least one control unit is configured to adjust the reverse bias of the at least one photodetector. A method of operating an optical sensor is also disclosed.
Various embodiments provide optical lenses that include phase shift layers that transmit incident light with four or more distinct phase quantizations. In one embodiment, a lens includes a substrate, a first immersion material layer on the substrate, and a plurality of anti-reflective phase shift layers on the first immersion material layer. The phase shift layers define a first anti-reflective phase shift region that transmits received light without a phase shift, a second anti-reflective phase shift region configured to transmit the received light with a first phase shift, a third anti-reflective phase shift region configured to transmit the received light with a second phase shift, and a fourth anti-reflective phase shift region configured to transmit the received light with a third phase shift. The first, second, and third phase shifts are different from one another.
G02B 1/118 - Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
60.
Lens displacement detection circuit for an optical device
A lens is positioned to be received by a lens holder. The lens includes a first electrical trace and the lens holder includes a second electrical trace. The first and second electrical traces form electrodes of a sense capacitor. A capacitance of the sense capacitor is sensed. From the sensed capacitance, a determination is made as to whether the lens is present and properly positioned in the lens holder.
G02B 7/10 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification by relative axial movement of several lenses, e.g. of varifocal objective lens
G02B 7/02 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses
H04N 23/54 - Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
61.
Anode sensing circuit for single photon avalanche diodes
Disclosed herein is an array of pixels. Each pixel includes a single photon avalanche diode (SPAD) and a transistor circuit. The transistor circuit includes a clamp transistor configured to clamp an anode voltage of the SPAD to be no more than a threshold clamped anode voltage, and a quenching element in series with the clamp transistor and configured to quench the anode voltage of the SPAD when the SPAD is struck by an incoming photon. Readout circuitry is coupled to receive the clamped anode voltage from the transistor circuit and to generate a pixel output therefrom, the threshold clamped anode voltage being below a maximum voltage rating of transistors forming the readout circuitry.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
STMICROELECTRONICS (RESEARCH & DEVELOPMENT ) LIMITED (United Kingdom)
STMICROELECTRONICS (GRENOBLE 2) SAS (France)
Inventor
Lee, Denise Tingxi
Dutton, Neale
Moeneclaey, Nicolas
Andriot-Ballet, Jerome
Abstract
A laser diode driver circuit includes a first pair of contacts and connectors coupled to an anode of the laser diode. An inductance of each of the first pair of contacts and connectors is the same. A second pair of contacts and connectors are coupled to a cathode of the laser diode. An inductance of each of the second pair of contacts and connectors is the same. The laser diode driver circuit also includes current driving circuitry.
H01S 5/183 - Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
An indirect time of flight sensor includes a matrix of pixels, wherein each pixel includes at least two controllable transfer devices. First conductive lines transmit first control signals to the transfer devices, these first signals being provided by a first circuit. A device is provided for illuminating a scene that is divided into at least two first areas. The device successively illuminates each first area. The matrix is similarly divided into at least two second areas. The matrix and illumination device are disposed such that each first area corresponds to one second area. The first circuit provides different first signals to the different second areas.
A method includes measuring a first set of photon-event data collected from a first crosstalk-monitoring zone of an optical receiver during a first period of time of flight ranging, measuring a second set of photon-event data collected from a second crosstalk-monitoring zone of the optical receiver during the first period of time of flight ranging, and generating a first dynamic crosstalk compensation value for a first histogram region of the optical receiver using the first set of photon-event data, the second set of photon-event data, and a native crosstalk compensation value for the first histogram region of the optical receiver.
In certain embodiments, a method includes accessing image information for a scene in a movement path of a mobile robot. The image includes image information for each of a plurality of pixels of the scene, the image information comprising respective intensity values and respective distance values. The method includes analyzing the image information to determine whether to modify the movement path of the mobile robot. The method includes initiating, in response to determining according to the image information to modify the movement path of the mobile robot, sending of a command to a drive subsystem of the mobile robot to modify the movement path of the mobile robot.
A single photon avalanche diode (SPAD) includes a PN junction in a semiconductor well doped with a first type of dopant. The PN junction is formed between a first region doped with the first type of dopant and a second region doped with a second type of dopant opposite to the first type of dopant. The first doped region is shaped so as to incorporate local variations in concentration of dopants that are configured, in response to a voltage between the second doped region and the semiconductor well that is greater than or equal to a level of a breakdown voltage of the PN junction, to generate a monotonic variation in the electrostatic potential between the first doped region and the semiconductor well.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A method implemented by a first time of flight (ToF) sensor includes generating, by the first ToF sensor, a first depth map in accordance with measurements of reflections of an optical signal emitted by the first ToF sensor; communicating, by the first sensor with a second ToF sensor, the first depth map and a second depth map, the second depth map generated by the second ToF sensor; and determining, by the first ToF sensor, a relative location of the first ToF sensor relative to the second ToF sensor in accordance with the first depth map and the second depth map.
An optical module includes an optical detector, laser emitter, and first and second support structures, each carried by a substrate. An optical layer includes first and second fixed portions carried by the support structures, a movable portion affixed between the fixed portions by a spring structure, and a lens system carried by the movable portion, the lens system including an objective lens and a beam shaping lens. The optical layer includes a comb drive with a first comb structure extending from the first fixed portion to interdigitate with a second comb structure extending from the movable portion, a third comb structure extending from the second fixed portion to interdigitate with a fourth comb structure extending from the movable portion, and actuation circuitry applying voltages to the comb structures to cause the movable portion of the optical layer to oscillate back and forth between the fixed portions.
G01S 17/894 - 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
69.
Compact line scan MEMS time of flight system with actuated lens
Disclosed herein is an optical module including a substrate, with an optical detector, laser emitter, and support structure being carried by the substrate. An optical layer includes a fixed portion carried by the support structure, a movable portion affixed between opposite sides of the fixed portion by a spring structure, and a lens system carried by the movable portion. The movable portion has at least one opening defined therein across which the lens system extends, with at least one supporting portion extending across the at least one opening to support the lens system. The optical layer further includes a MEMS actuator for in-plane movement of the movable portion with respect to the fixed portion.
G02B 26/08 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
B81B 3/00 - Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
70.
Method for measuring ambient light and corresponding integrated device
In an embodiment a method for measuring ambient light includes successively synchronizing optical signal acquisition phases with extinction phases of a disruptive light source, wherein the disruptive light source periodically provides illumination phases and the extinction phases, accumulating, in each acquisition phase, photo-generated charges by at least one photosensitive pixel comprising a pinned photodiode, wherein an area of the pinned photodiode is less than or equal to 1/10 of an area of the at least one photosensitive pixel, transferring, for each pixel, the accumulated photo-generated charges to a sensing node, converting, for each pixel, the transferred charges to a voltage at a voltage node and converting, for each pixel, the transferred charges to a digital number.
G01J 1/42 - Photometry, e.g. photographic exposure meter using electric radiation detectors
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
A system and method for a scalable depth sensor. The scalable depth sensor having an emitter, a receiver, and a processor. The emitter is configured to uniformly illuminate a scene within a field-of-view of the emitter. The receiver including a plurality of detectors, each detector configured to capture depth and intensity information corresponding to a subset of the field-of-view. The a processor connected to the detector and configured to selectively sample a subset of the plurality of the detectors in accordance with compressive sensing techniques, and provide an image in accordance with an output from the subset of the plurality of the detectors, the image providing a depth and intensity image corresponding to the field-of-view of the emitter.
An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.
A method for detecting an orientation of a screen of a device includes having a two-dimensional (2D) detector array affixed to the device in a fixed orientation relative to the screen, where the 2D detector array includes a sensing area with a plurality of pixels; imaging a scene including a user in a foreground and a background onto the 2D detector array; extracting an information of the scene for each of the plurality of pixels of the sensing area, the information being extracted from the 2D detector array by an image sensor; identifying an asymmetry in a pixelated image of the scene that includes the information of the scene for each of the plurality of pixels of the sensing area; and based on the asymmetry in the image of the scene, determining the orientation of the screen relative to the user.
G09G 5/32 - Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators characterised by the display of individual characters or indicia using display control signals derived from coded signals representing the characters or indicia with a character-code memory with means for controlling the display position
G06F 1/16 - Constructional details or arrangements
G06T 7/70 - Determining position or orientation of objects or cameras
Various embodiments provide an optical lens that includes wafer level diffractive microstructures. In one embodiment, the optical lens includes a substrate, a microstructure layer having a first refractive index, and a protective layer having a second refractive index that is different from the first refractive index. The microstructure layer is formed on the substrate and includes a plurality of diffractive microstructures. The protective layer is formed on the diffractive microstructures. The protective layer provides a cleanable surface and encapsulates the diffractive microstructures to prevent damage and contamination to the diffractive microstructures. In another embodiment, the optical lens includes a substrate and an anti-reflective layer. The anti-reflective layer is formed on the substrate and includes a plurality of diffractive microstructures.
The present disclosure is directed to a fluidic ejection device configured to detect whether one or more nozzles of the fluidic ejection device is in a normal state, a blocked nozzle state, or an accumulated fluid state. The fluidic ejection device includes an optical blockage detector having a light emitting device configured to emit a light signal, and a light sensor configured to detect the light signal. The optical blockage detector detects the normal state, the blocked nozzle state, and the accumulated fluid state based on the detected light signal.
Image sensor including photodiode array comprising a first transistor coupled to a photodiode to receive a column enable signal and a second transistor coupled to the photodiode to receive a column disable signal
A sensor has plurality of pixels arranged in a plurality of rows and columns with row control circuitry for controlling which one of said rows is activated and column control circuitry for controlling which of said pixels in said activated row is to be activated. The column circuitry has memory configured to store information indication as to which of the pixels are defective, wherein each of the pixels has a photodiode and a plurality of transistors which control the activation of the photodiode. A first transistor is configured to be controlled by a column enable signal while a second transistor is configured to be controlled by a row select signal.
A ToF sensor includes an array of pixels having first and second subsets of pixels, first and second pluralities of TDCs, a routing bus having first and second pluralities of bus drivers, and a controller configured to: when the first subset of pixels is active and the second subset of pixels is not active, control the first plurality of bus drivers to route events from half of the pixels of the first subset to the first plurality of TDCs and control the first and second pluralities of bus drivers to route events from the other half of the pixels of the first subset to the second plurality of TDCs, and when the first subset of pixels is not active and the second subset of pixels is active, control the first plurality of bus drivers to route events from the second subset of pixels to the first plurality of TDCs.
Disclosed herein is a time of flight sensing module that includes a reflected laser light detector formed on a printed circuit board, and a plurality of laser modules positioned about a periphery of the reflected laser light detector. Each laser module includes an interposer substrate vertically spaced apart from the printed circuit board, at least one laser diode carried by the interposer substrate, and a diffuser spaced apart from the interposer substrate and over the at least one laser diode. A lens may be positioned over the reflected laser light detector, and the plurality of laser modules are positioned about the periphery of the lens.
A method for forming a molded proximity sensor with an optical resin lens and the structure formed thereby. A light sensor chip is placed on a substrate, such as a printed circuit board, and a diode, such as a laser diode, is positioned on top of the light sensor chip and electrically connected to a bonding pad on the light sensor chip. Transparent, optical resin in liquid form is applied as a drop over the light sensor array on the light sensor chip as well as over the light-emitting diode. After the optical resin is cured, a molding compound is applied to an entire assembly, after which the assembly is polished to expose the lenses and have a top surface flush with the top surface of the molding compound.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 31/167 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
G01V 8/12 - Detecting, e.g. by using light barriers using one transmitter and one receiver
A method includes emitting a pattern of transmitted light into a three-dimensional environment from an optical transmitter and receiving reflected light from the pattern of transmitted light at an optical receiver. The method includes identifying light-sensitive pixels of that are stimulated by from the pattern of reflected light and generating an up-sampled matrix with subsections that correspond to light-sensitive pixels. The method includes sparsely populating subsections of the up-sampled matrix with a pattern of non-zero entries and imaging the three-dimensional environment.
H04N 13/239 - Image signal generators using stereoscopic image cameras using two 2D image sensors having a relative position equal to or related to the interocular distance
H04N 13/125 - Improving the 3D impression of stereoscopic images by modifying image signal contents, e.g. by filtering or adding monoscopic depth cues for crosstalk reduction
82.
Method and apparatus for processing a histogram output from a detector sensor
A method includes receiving a histogram output from a detector sensor, and calculating a median point of a pulse waveform within the histogram. The pulse waveform has an even probability distribution over at least one quantization step of the histogram around the median point. A corresponding apparatus can include a detector sensor and a co-processor coupled to the detector sensor.
A system and method are provided on one or more companion chips having a plurality of cores. Each core has core circuitry and a test interface for carrying out tests in relation to the core circuitry. The test interface has an address register to hold an address of the core and address determination circuitry. The address determination circuitry is configured to compare an address received on an address line to the address held in the address register to determine whether a core is being addressed. The address determination circuitry is also configured to direct the test interface to carry out a testing operation in response to the determination.
A single photon avalanche diode (SPAD) has a cathode coupled to a high voltage supply and an anode coupled to a first node. A photodetection circuit includes: a first n-channel transistor having a drain coupled to the first node, a source coupled to ground, and a gate coupled to a third node; a second n-channel transistor having a drain coupled to the first node, a source coupled to ground, and a gate coupled to a second node; and an inverter having an input coupled to the first node and an output coupled to an intermediate node. A current starved inverter has an input coupled to the intermediate node and an output coupled to the second node, a logic gate has inputs coupled to the intermediate node and the second node, and an output coupled to the third node.
An electronic device includes a time-of-flight unit with a laser emitting ranging light toward a scene, and a detector detecting ranging light reflected from the scene. The detector includes photodetection regions of macropixels. Each macropixel includes photodiodes, and OR logic circuitry receiving outputs of photodiodes as input and generating a detection signal. Each macropixel has output combining logic, and selection circuitry selectively passing the detection signal to the output combining logic or to output combining logic of a neighboring macropixel. The output combining logic has inputs coupled to the selection circuitry and the selection circuitry of the neighboring macropixel, and generates an output signal by logically combining outputs of the selection circuitry and the selection circuitry of the neighboring macropixel. Timing circuitry determines distances to points of the scene from elapsed time between emitting the ranging light and detecting of ranging light reflected from the scene by the photodetection regions.
H03K 19/17764 - Structural details of configuration resources for reliability
H03K 19/20 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
86.
Optical sensor and apparatus comprising an optical sensor having a readout circuit to determine an ambient light level based on voltage across a photodetector at the end of an exposure time
An optical sensor includes pixels. Each pixel has a photodetector. A readout circuit performs a process over an exposure time where the photodetector is connected to a reverse bias voltage supply to reset a voltage across the photodetector, and the photodetector is disconnected from the reverse bias voltage supply until that the voltage across the photodetector decreases in response to received ambient light. An ambient light level is then determine an based on a number of times the voltage across the photodetector is reset over the exposure time.
In an embodiment, a method includes: receiving a first plurality of digital codes from a time-to-digital converter (TDC); TDC; generating a coarse histogram from the first plurality of digital codes; detecting a peak coarse bin from the plurality of coarse bins; after receiving the first plurality of digital codes, receiving a second plurality of digital codes from the TDC; and generating a fine histogram from the second plurality of digital codes based on the detected peak coarse bin, where a fine histogram depth range is narrower than a coarse histogram depth range, where a lowest fine histogram depth is lower or equal to a lowest coarse peak depth, and where a highest fine histogram depth is higher or equal to a highest coarse peak depth.
In an embodiment, a method includes: providing a gray-coded time reference to a time-to-digital converter (TDC); receiving an event from an event signal; latching the gray-coded time reference into a memory upon reception of the event signal; and updating a time-of-flight (ToF) histogram based on the latched gray-coded time reference.
A diffuse illumination system for reducing diffusion-related illumination inhomogeneities includes an array of vertical cavity surface emitting laser (VCSEL) emitters and a diffusing element including a transparent substrate and an array of nanostructures. A dimension and a shape of each nanostructure is configured to retard phases of two orthogonal polarization states of light incident on each nanostructure from the emitters for reducing illumination inhomogeneities in the output.
An optical device is mounted to an electronic circuit having a main face with at least one light source. The optical device is made from a block which includes, for each light source, a corresponding opening that passes through the block. The opening includes a cylindrical part with a threading on an inside surface.
G06T 5/50 - Image enhancement or restoration using two or more images, e.g. averaging or subtraction
H04N 23/741 - Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
An embodiment method of measuring ambient light comprises generating, by an ambient light sensor associated with a screen which alternates between first phases in which light is emitted and second phases in which no light is emitted by the screen, a first signal representative of an intensity of light received by the ambient light sensor during the first and second phases; comparing the first signal with a threshold intensity value; and controlling a timing of an ambient light measurement by the light sensor based on the comparison.
G09G 3/3225 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
The present disclosure is directed to an electronic device including a sensor having a transmission module configured to provide a plurality of collimated light beams. The transmission module includes a light source and a transmission beam splitter. The transmission beam splitter includes a plurality of lenslets. The transmission beam splitter is configured to receive one or more light beams from the light source and refract the one or more light beams for forming the plurality of collimated light beams.
A pixel includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage supply through a quenching element, with the SPAD having a capacitance at its anode formed from a deep trench isolation, with the quenching element having a sufficiently high resistance such that the capacitance is not fully charged when the SPAD is struck by an incoming photon. The pixel includes a clamp transistor configured to be controlled by a voltage clamp control signal to clamp voltage at an anode of the SPAD when the SPAD is struck by an incoming photon to be no more than a threshold clamped anode voltage, and readout circuitry coupled to receive the clamped anode voltage from the clamp transistor and to generate a pixel output therefrom. The threshold clamped anode voltage is below a maximum operating voltage rating of transistors forming the readout circuitry.
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
95.
Method for operating a ToF ranging array, corresponding circuit and device
In an embodiments, a method for operating a time-of-flight (ToF) ranging array includes: illuminating a field-of-view (FoV) of the ToF ranging array with radiation pulses; receiving reflected radiation pulses with a plurality of single photon avalanche diodes (SPADs) in a region of interest (ROI) of the ToF ranging array, the plurality of SPADs arranged in a plurality of SPAD clusters; determining an ambient count of ambient light events generated by SPADs of a first SPAD cluster of the plurality of SPAD clusters; and gating an output of the first SPAD cluster based on the ambient count.
G01S 17/48 - Active triangulation systems, i.e. using the transmission and reflection of electromagnetic waves other than radio waves
G01S 17/18 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein range gates are used
An embodiment method of command of an electronic device comprises controlling a screen to alternate periodically between a first phase in which the screen emits light and a second phase in which no light is emitted by the screen, and precharging a charge pump of an ambient light sensor during the first phases, the ambient light sensor comprising at least a single photon avalanche diode powered by the charge pump.
G09G 3/32 - Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
97.
Photodetection circuit with extended hold-off time for SPAD quench assistance
A photodetection circuit includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage supply through a quench resistance and an anode coupled to a first node, a capacitive deep trench isolation capacitor coupled between the first node and ground, and a first n-channel transistor. The first n-channel transistor has a drain coupled to the first node, a source coupled to ground, and a gate coupled to a resistance control signal. A second n-channel transistor has a drain coupled to the first node, a source coupled to ground, and a gate coupled to a second node. An inverter has an input coupled to the first node and an output coupled to an intermediate node. A current starved inverter has an input coupled to the intermediate node and an output coupled to the second node.
A photodetection circuit includes a single photon avalanche diode (SPAD), and an active quenching circuit coupling the SPAD to an intermediate node and having a variable RC constant. The variable RC constant provides a first RC constant during an idle state so that when the SPAD detects a photon, the SPAD avalanches to begin quenching to set a magnitude of a voltage at a terminal of the SPAD to a quench voltage, the quench voltage being greater than a threshold voltage; a second RC constant greater than the first RC constant during a hold off period during which the quenching occurs so as to maintain the voltage at the terminal of the SPAD at a magnitude that is above the threshold voltage during the hold off period; and a third RC constant less than the second RC constant but greater than the first RC constant during a recharge period during which the SPAD is recharged.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
An electronic integrated circuit chip includes a semiconductor substrate with a front side and a back side. A first reflective shield is positioned adjacent the front side of the semiconductor substrate and a second reflective shield is positioned adjacent the back side of the semiconductor substrate. Photons are emitted by a photon source to pass through the semiconductor substrate and bounce off the first and second reflective shields to reach a photon detector at the front side of the semiconductor substrate. The detected photons are processed in order to determine whether to issue an alert indicating the existence of an attack on the electronic integrated circuit chip.
A transmit integrated circuit includes a light source configured to generate a beam of light. A receive integrated circuit includes a first photosensor. A transmit optic is mounted over the transmit and receive integrated circuits. The transmit optic is formed by a prismatic light guide and is configured to receive the beam of light. An annular body region of the transmit optic surrounds a central opening which is aligned with the first photosensor. The annular body region includes a first reflective surface defining the central opening and further includes a ring-shaped light output surface surrounding the central opening. Light is output from the ring-shaped light output surface in response to light which propagates within the prismatic light guide in response to the received beam of light and which reflects off the first reflective surface.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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