A method of fabricating a solar cell array module or panel comprising providing a support, providing a face sheet having a top side and an opposite bottom side, mounting the bottom side of the face sheet on the support, dispensing an adhesive on a plurality of discrete predefined regions on the top side of the face sheet where a string of solar cell assemblies is to be mounted using an automated process, positioning and mounting an interconnected string of solar cell assemblies on the adhesive regions on the top side of the face sheet using machine vision, and applying heat or pressure to bond the interconnected string of solar cell assemblies to the adhesive regions on the top side of the face sheet.
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
B29C 65/78 - Means for handling the parts to be joined, e.g. for making containers or hollow articles
H10F 19/00 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules
H10F 19/80 - Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
A multijunction solar cell including an upper first solar subcell having an emitter and base layers forming a photoelectric junction; a second solar subcell disposed under and adjacent to the upper first solar subcell, and having an emitter and base layers forming a photoelectric junction; and a third solar subcell disposed under and adjacent to the second solar subcell and having an emitter and base layers forming a photoelectric junction; wherein at least one of the base and emitter layers of at least a particular solar subcell from among the upper first solar subcell, the second solar subcell, and the third solar subcell has a graded band gap throughout at least a portion of thickness of its active layer adjacent to the photoelectric junction and being in a range of 20 to 300 MeV greater than a band gap in the active layer in both the emitter layer and the base layer spaced away from the photoelectric junction.
H10F 10/163 - Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
H10F 10/142 - Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
H10F 10/144 - Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
H10F 10/161 - Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
3.
Method of designing four junction metamorphic multijunction solar cells for space applications
A method of fabricating four junction solar cell wherein the selection of the composition of the subcells and their band gaps maximizes the efficiency at high temperature (in the range of 50 to 100 degrees Centigrade) in deployment in space at a specific predetermined time after initial deployment (referred to as the beginning of life or BOL), such predetermined time being referred to as the end-of-life (EOL), and being at least five years after the BOL, such selection being designed not to maximize the efficiency at BOL but to increase the solar cell efficiency at the EOL while disregarding the solar cell efficiency achieved at the BOL, such that the solar cell efficiency designed at the BOL is less than the solar cell efficiency at the BOL that would be achieved if the selection were designed to maximize the solar cell efficiency at the BOL.
H01L 31/056 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
H01L 31/0725 - Multiple junction or tandem solar cells
A method of fabricating multijunction solar cell including an upper solar subcell and having an emitter of p conductivity type with a first band gap, and a base of n conductivity type with a second band gap greater than the first band gap; a lower solar subcell disposed below the upper solar subcell having an emitter of p conductivity type with a third band gap, and a base of n conductivity type with a fourth band gap greater than the third band gap; and an intermediate grading interlayer disposed between the upper and lower solar subcells and having a graded lattice constant that matches the upper first subcell on a first side and the second solar subcell on the second side opposite the first side, and having a fifth band gap that is greater than the second band gap of the upper solar subcell.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
5.
HEAT DISSIPATING STRUCTURES FOR SOLAR CELL ARRAYS FOR USE IN SPACE APPLICATIONS
A supporting panel for use in connection with a multijunction solar cell array, and its method of fabrication, the being disposed solar cell array for transmitting IR light in the spectral range of a wavelength of 5 to 50 nm which represents unused an undesired heat energy, thereby providing thermodynamic radiative cooling of the solar cell array when deployed in space outside the earth's atmosphere.
H01L 31/052 - Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H02S 20/30 - Supporting structures being movable or adjustable, e.g. for angle adjustment
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; and a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of its emitter layer and base layer.
H01L 31/0725 - Multiple junction or tandem solar cells
C12P 19/56 - Preparation of O-glycosides, e.g. glucosides having an oxygen atom of the saccharide radical directly bound to a condensed ring system having three or more carbocyclic rings, e.g. daunomycin, adriamycin
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A method of fabricating a solar cell array comprising providing a first release carrier having a sequence of pressure sensitive adhesive (PSA) patches on a first side of the release carrier; providing a flexible support for contacting the PSA patches on the first side of the release carrier with a first side of the flexible support under conditions effective to transfer the PSA patches to the first side of the flexible support using an automated process to form discrete predefined PSA regions on the first side of the flexible support, and using an automated process for contacting the PSA patches on the first side of the flexible support with a set of solar cell assemblies to thereby attach the sequence of solar cell assemblies to the first side of the flexible support using the PSA patches.
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; and a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of its emitter layer and base layer.
H01L 31/0725 - Multiple junction or tandem solar cells
C12P 19/56 - Preparation of O-glycosides, e.g. glucosides having an oxygen atom of the saccharide radical directly bound to a condensed ring system having three or more carbocyclic rings, e.g. daunomycin, adriamycin
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
10.
AUTOMATED ASSEMBLY METHODS FOR MOUNTING SOLAR CELLS ON SPACE PANELS
A method of fabricating a multijunction solar cell array on a carrier using one or more automated processes, the method comprising providing a first multijunction solar cell including a first contact pad and a second contact pad disposed adjacent the top surface of the multijunction solar cell along a first peripheral edge thereof attaching a first electrical interconnect to the first contact pad of said first multijunction solar cell using a pick and place process attaching a second electrical interconnect to the second contact pad of the first multijunction solar cell using a pick and place process positioning in the first multijunction solar cell over an adhesive region of a permanent carrier using an automated machine/vision apparatus and bonding the first multijunction solar cell to the adhesive region using pressure and/or heat.
E05B 65/10 - Locks for special use for panic or emergency doors
E06B 7/18 - Sealing arrangements on wings or parts co-operating with the wings by means of movable edgings, e.g. draught sealings additionally used for bolting
11.
INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS HAVING A PERMANENT SUPPORTING SUBSTRATE
A solar cell fabricated from a semiconductor growth substrate; that is sub sequentially removed a sequence of layers of semiconductor material grown on the semiconductor growth substrate forming the solar cell; a metal contact layer deposited over the sequence of layers; of a permanent supporting substrate being affixed directly over the metal contact layer and permanently bonded thereto.
A cover glass for use in connection with a multijunction solar cell, and its method of fabrication, the solar cell including an upper and a lower solar subcell, each having an emitter layer and a base layer and forming a photoelectric junction; the cover glass being disposed above the upper solar subcell for transmitting light in the spectral range of a wavelength of 5 to 50 nm which represents unused and undesired heat energy and thereby providing thermodynamic radiative cooling of the solar cell when deployed in space outside the atmosphere.
H01L 31/052 - Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
15.
ANTIREFLECTIVE STRUCTURES FOR COVER GLASSES IN SINGLE OR MULTIJUNCTION SOLAR CELLS
A method of fabricating a cover glass for use in connection with a multijunction solar cell, the solar cell including an upper and a lower solar subcell, each having an emitter layer and a base layer and forming a photoelectric junction; the cover glass being disposed above the upper solar subcell for transmitting light in the spectral range of a wavelength of 5 to 50 nm which represents unused and undesired heat energy and thereby providing thermodynamic radiative cooling of the solar cell when deployed in space outside the atmosphere.
H01L 31/052 - Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
16.
Semiconductor wafer for mosaic solar cell fabrication
A multijunction solar cell including an upper first solar subcell having an emitter and base layers forming a photoelectric junction; a second solar subcell disposed under and adjacent to the upper first solar subcell, and having an emitter and base layers forming a photoelectric junction; and a third solar subcell disposed under and adjacent to the second solar subcell and having an emitter and base layers forming a photoelectric junction; wherein at least one of the base and emitter layers of at least a particular solar subcell from among the upper first solar subcell, the second solar subcell, and the third solar subcell has a graded band gap throughout at least a portion of thickness of its active layer adjacent to the photoelectric junction and being in a range of 20 to 300 MeV greater than a band gap in the active layer away from the photoelectric junction.
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/0725 - Multiple junction or tandem solar cells
18.
MULTIJUNCTION SOLAR CELLS WITH LIGHT SCATTERING LAYER
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below the upper first solar subcell, and having a second band gap smaller than said first band gap; wherein a light scattering layer is provided below the second solar subcell and adjacent to the second solar subcell for redirecting the incoming light that has passed through the second solar subcell back into the second solar subcell to be scattered along longer path lengths in the second solar subcell.
A back contact solar cell assembly and methods for its manufacture and assembly onto a panel for use in space vehicles are described. The solar cell assembly includes a compound semiconductor multijunction solar cell having a contact at the top surface of the solar cell, a conductive semiconductor element extending from the contact on the top surface to the back surface of the assembly where it forms a first back contact of a first polarity type, and a second back contact of a second polarity at the back surface of the assembly electrically coupled to the back surface of the solar cell.
A multijunction solar cell in accordance with an example implementation includes a growth substrate; a first solar subcell disposed over or in the growth substrate; a tunnel diode disposed over the first solar subcell; and a grading interlayer directly disposed over the tunnel diode; a sequence of layers of semiconductor material forming a solar cell disposed over the grading interlayer comprising a plurality of solar subcells. The multijunction solar cell also includes a first wafer bowing inhibition layer disposed directly over an uppermost sublayer of the grading interlayer, such bowing inhibition layer having an in-plane lattice constant greater than the in-plane lattice constant of the uppermost sublayer of the grading interlayer. A second wafer bowing inhibition layer is disposed directly over the first wafer bowing inhibition layer.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/074 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
21.
INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS FOR SPACE APPLICATIONS
A multijunction solar cell with a graded interlayer disposed between two adjacent solar subcells, the graded interlayer being compositionally graded to lattice match a first solar subcell on one side, and an adjacent second solar subcell on the other side, the graded interlayer being composed of at least four step layers, a particular step layer having a lattice constant in the range of 0.2 to 1.2% greater than the lattice constant of the adjacent layer on which it is grown, and the subsequent steps layers disposed directly on the particular step layer having a lattice constant in the range of 0.1 to 0.6% greater than the particular layer on which it is grown, and wherein the thickness of the particular step layer is at least twice the thickness of each of the other subsequent step layers.
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
22.
METHOD OF FABRICATING METAMORPHIC MULTIJUNCTION SOLAR CELLS FOR SPACE APPLICATIONS
A method of fabricating a four junction solar cell by identifying the composition and band gaps of the upper first, second and third subcells that maximizes the efficiency of the solar cell at a predetermined time after initial deployment by simulation; fabricating one or more four-junction test solar cells in accordance with the identified composition and band gaps of the upper first, second and third subcells; performing one or more optical or electrical tests on the fabricated one or more four-junction test solar cells; based on results of the tests, determining one or more properties of at least one of the upper first, second or third subcells to be modified in subsequent fabrication of four-junction solar cells, including the band gap, doping level and profile, and thickness of each of the subcell layers; and fabricating a further four-junction solar cell in accordance with the modified properties of at least one of the upper first, second or third subcells to optimize the efficiency of the solar cell at the predetermined time.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
23.
INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS FOR SPACE APPLICATIONS
An inverted metamorphic multijunction solar cell including an upper first solar subcell, a second solar subcell and a third solar subcell. The upper first solar subcell has a first band gap and positioned for receiving an incoming light beam. The second solar subcell is disposed below and adjacent to, and is lattice matched with, the upper first solar subcell, and has a second band gap smaller than the first band gap. The third solar subcell is disposed below the second solar subcell, and is composed of a GaAs base and emitter layer so as to optimize the efficiency of the solar cell after exposure to radiation. In some implementations, at least one of the solar subcells has a graded band gap throughout its thickness.
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein the upper first solar subcell covers less than the entire upper surface of the second solar subcell, leaving an exposed portion of the second solar subcell around the periphery of the multijunction solar sell that lies in the path of the incoming light beam.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0475 - PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/056 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer.
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0725 - Multiple junction or tandem solar cells
26.
Method of fabricating multijunction solar cells for space applications
A method of fabricating a four junction solar cell having an upper first solar subcell composed of a semiconductor material including aluminum and having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; and a fourth solar subcell adjacent to and lattice matched with said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/076 - Multiple junction or tandem solar cells
H01L 27/30 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices
H02S 50/10 - Testing of PV devices, e.g. of PV modules or single PV cells
H01L 31/041 - Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications
A multijunction solar cell including interconnected first and second discrete semiconductor regions disposed adjacent and parallel to each other including first top solar subcell, second (and possibly third) lattice matched middle solar subcells; a graded interlayer adjacent to the last middle solar subcell; and a bottom solar subcell adjacent to said graded interlayer being lattice mismatched with respect to the last middle solar subcell; wherein an opening is provided from the bottom side of the semiconductor body to one or more of the solar subcells so as to allow a discrete electrical connector to be made extending in free space and to electrically connect contact pads on one or more of the solar subcells.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
28.
Inverted metamorphic multijunction solar cells having a permanent supporting substrate
A method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; affixing the adhesive polyimide surface of a permanent supporting substrate directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique; and removing the semiconductor growth substrate.
A multijunction solar cell including a substrate and a top (or light-facing) solar subcell having an emitter layer, a base layer, and a window layer adjacent to the emitter layer, the window layer composed of a material that is optically transparent, has a band gap of greater than 2.6 eV, and includes an appropriately arranged multilayer antireflection coating on the top surface thereof.
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/0687 - Multiple junction or tandem solar cells
B64G 1/44 - Arrangements or adaptations of power supply systems using radiation, e.g. deployable solar arrays
A solar cell module comprising a plurality of solar cells mounted on a flexible support, the support comprising a conductive layer on the top surface thereof divided into two electrically isolated portions—a first conductive portion and a second conductive portion. Each solar cell comprises a front surface, a rear surface, and a first contact on the rear surface and a second contact on the front surface. Each one of the plurality of solar cells is placed on the first conductive portion with the first contact electrically connected to the first conductive portion so that the solar cells are connected through the first conductive portion. A second contact of each solar cell is then connected to the second conductive portion by a respective interconnect.
A solar cell comprising an epitaxial sequence of layers of semiconductor material thrilling at least a first and second solar subcells; a semiconductor contact layer disposed on the bottom surface of the second solar subcell; a reflective metal layer disposed below the semiconductor contact layer such that the reflectivity of the reflective metal layer is greater than 80% in the wavelength range 850 to 2000 nm, for reflecting light back into the second solar subcell.
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer.
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0725 - Multiple junction or tandem solar cells
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer of the one solar subcell.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; and a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of its emitter layer and base layer.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
35.
Automated assembly and mounting of solar cells on panels
A method of fabricating a solar cell array module or panel comprising providing a support, providing a face sheet having a top side and an opposite bottom side, mounting the bottom side of the face sheet on the support, dispensing an adhesive on a plurality of discrete predefined regions on the top side of the face sheet where a string of solar cell assemblies is to be mounted using an automated process, positioning and mounting an interconnected string of solar cell assemblies on the adhesive regions on the top side of the face sheet using machine vision, and applying heat or pressure to bond the interconnected string of solar cell assemblies to the adhesive regions on the top side of the face sheet.
H10F 71/00 - Manufacture or treatment of devices covered by this subclass
B29C 65/78 - Means for handling the parts to be joined, e.g. for making containers or hollow articles
H10F 19/00 - Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group , e.g. photovoltaic modules
H10F 19/80 - Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
A back contact solar cell assembly and methods for its manufacture and assembly onto a panel for use in space vehicles are described. The solar cell assembly includes a compound semiconductor multijunction solar cell having a contact at the top surface of the solar cell, a conductive semiconductor element extending from the contact on the top surface to the back surface of the assembly where it forms a first hack contact of a first polarity type, and a second back contact of a second polarity at the back surface of the assembly electrically coupled to the back surface of the solar cell.
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed directly below and adjacent to the upper first solar subcell, and having a second band gap smaller than said first band gap; wherein a light scattering layer is provided below the upper first solar subcell and adjacent to the upper first solar subcell for redirecting the incoming light to be scattered along longer path lengths into the second solar subcell.
A method of fabricating a multijunction solar cell by providing a plurality of multijunction solar cells; dispensing an uncured silicone coating on the solar cells using an automated process with visual recognition, and curing the silicone coating on the solar cell.
E06B 5/16 - Fireproof doors or similar closuresAdaptations of fixed constructions therefor
E06B 7/18 - Sealing arrangements on wings or parts co-operating with the wings by means of movable edgings, e.g. draught sealings additionally used for bolting
E05B 65/10 - Locks for special use for panic or emergency doors
A multijunction solar cell and its method of fabrication, including an upper and a lower solar subcell each having an emitter layer and a base layer forming a photoelectric junction; a near infrared (NIR) wideband reflector layer disposed below the upper subcell and above the lower subcell for reflecting light in the spectral range of 900 to 1050 nm which represents unused and undesired solar energy and thereby reducing the overall solar energy absorptance in the solar cell and providing thermodynamic radiative cooling of the solar cell when deployed in space outside the atmosphere.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/052 - Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
H01L 31/0687 - Multiple junction or tandem solar cells
A multijunction solar cell including an upper first solar subcell and having an emitter of p conductivity type with a first band gap, and a base of n conductivity type with a second band gap greater than the first band gap; a second solar subcell having an emitter of p conductivity type with a third band gap, and a base of n conductivity type with a fourth band gap greater than the third band gap; and an intermediate grading interlayer disposed between the first and second subcells and having a graded lattice constant that matches the first subcell on a first side and the second subcell on the second side, and having a fifth band gap that is greater than the second band gap of the first solar subcell.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
47.
Multijunction metamorphic solar cell for space applications
A method of manufacturing a multijunction solar cell having an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a graded interlayer adjacent to the third solar subcell; and a fourth solar subcell adjacent to said graded interlayer and composed of a semiconductor material having a fourth band gap smaller than the third band gap and being lattice mismatched with respect to the third solar subcell; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/074 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar cells has a graded band gap throughout its thickness.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
49.
Five junction multijunction metamorphic solar cell
A five junction solar cell and its method of manufacture including an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a fourth solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap and being lattice matched with respect to the third solar subcell; a graded interlayer adjacent to the fourth solar subcell and having a fifth band gap greater than the fourth band gap; and a bottom solar subcell adjacent to the graded interlayer and being lattice mismatched from the fourth solar subcell and having a sixth band gap smaller than the fifth band gap.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/074 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
50.
Inverted multijunction solar cells with distributed bragg reflector
An inverted metamorphic multijunction solar cell comprising: an upper first solar subcell having a first band gap; a middle second solar subcell disposed adjacent to the upper first solar subcell and having a second band gap smaller than said first band gap; a graded interlayer disposed adjacent to the middle second solar subcell and having a band gap that remains constant throughout its thickness; a lower third solar subcell disposed adjacent to said graded interlayer and having a fourth band gap that is smaller than said second band gap such that said third solar subcell is lattice mismatched with respect to said second solar subcell; a back surface field (BSF) layer disposed directly adjacent to the base layer of said lower third solar subcell; at least one distributed Bragg reflector (DBR) layer disposed directly adjacent to the back surface field (BSF) layer.
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/041 - Provisions for preventing damage caused by corpuscular radiation, e.g. for space applications
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
51.
Automated assembly and mounting of solar cells on a honeycomb support
A method of fabricating a solar cell array module comprising providing a support, providing a face sheet having a top side and an opposite bottom side, mounting the bottom side of the face sheet on the support, providing a pattern of discrete predefined adhesive regions in an automated manner on the top side of the face sheet using machine vision and mounting an array of solar cell assemblies on the adhesive regions in an automated manner on the top side of the face sheet.
A method of forming a multijunction solar cell that includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another adjacent solar subcell.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 31/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
3; depositing a window layer for a top (light facing) subcell subsequently to be formed directly on the top surface of the growth substrate; depositing a sequence of layers of semiconductor material forming a solar cell directly on the window layer; providing a surrogate substrate on the top surface of the sequence of layers of semiconductor material, and removing a portion of the semiconductor substrate so that only the high doped surface portion of the substrate, having a thickness in the range of 0.5 μm to 10 μm, remains.
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
54.
Automated assembly and mounting of solar cells on space panels
A method of fabricating a multijunction solar cell panel by providing a plurality of multijunction solar cells;
dispensing out uncured silicone coating on the solar cells using an automated process with visual recognition, and curing the silicone coating on the solar cell to complete the Cell-Interconnect-Cover Glass (CIC) assembly.
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0443 - PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
H01L 31/047 - PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
55.
Interconnection of neighboring solar cells on a flexible supporting film
A method of fabricating a solar cell assembly comprising a plurality of solar cells mounted on a flexible support, the support comprising a conductive layer on the top surface thereof divided into two electrically isolated portions—a first conductive portion and a second conductive portion. Each solar cell comprises a front surface, a rear surface, and a first contact on the rear surface and a second contact on the front surface. Each one of the plurality of solar cells is placed on the first conductive portion with the first contact electrically connected to the first conductive portion so that the solar cells are connected through the first conductive portion. A second contact of each solar cell is then connected to the second conductive portion by an interconnect. The two conductive portions serve as bus bars representing contacts of two different polarities of the solar cell assembly.
A multijunction solar cell assembly and its method of manufacture including interconnected first and second discreate semiconductor body subassemblies disposed adjacent and parallel to each other, in the sense of the incoming illumination, each semiconductor body subassembly including first top subcell, and possibly third middle subcells and a bottom solar subcell; wherein the interconnected subassemblies form at least a Three junction solar cell by a series connection being formed between the bottom solar subcell in the first semiconductor body with its at least least two junctions and the bottom solar subcell in the second semiconductor body representing the additional junction.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
An airfoil body for an aircraft extending from an inner end to an outer end, and between a leading edge and a trailing edge. The airfoil body comprises an internal structure and an airfoil skin covering the internal structure. The skin has a pressure side and a suction side, and the suction side includes a light transmitting portion. The internal structure includes an array of transduce elements attached to a planar sheet with the airfoil body. The present disclosure further relates to wings and aerial vehicles.
A multijunction solar cell including a substrate and at least one solar subcell having an emitter layer, a base layer, and a window layer adjacent to the emitter layer composed of a semiconductor window material, wherein the window material has a graded composition such that the material at the interface between the top surface of the emitter layer of the at least one solar subcell and the bottom surface of the window layer has a compression as measured by a delta in the Bragg angle from the substrate in a range of 0 to 500 arcseconds in compression, and material at the top surface of the window layer has a tension as measured by a delta in the Bragg angle from the substrate in a range of 50 to 700 arcseconds in tension, wherein the delta in the Bragg angle is obtained from a rocking curve from a triple axis coupled scan of Ω and 2θ (omega-2theta) using 1.5406 Å radiation.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H02S 40/22 - Light-reflecting or light-concentrating means
A method of fabricating an airfoil, and the airfoil or airfoil skin so fabricated, including a solar cell array arranged on the surface of the airfoil by providing and utilizing an assembly fixture having a smooth, concave surface. An uncured supporting film composed of a composite material (such as a carbon fiber composite) is mounted directly on the back side of the solar cells; and the film of composite material is co-cured on the assembly fixture so that the array of interconnected solar cells is bonded to the supporting film. The bonded and cured film of composite material and an array of interconnected solar cells is then removed from the assembly fixture.
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
The present disclosure provides methods of fabricating a multijunction solar cell panel in which one or more of the steps are performed using an automated process. In some embodiments, the automated process uses machine vision.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/0443 - PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
H01L 31/047 - PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
A solar cell module comprising a plurality of solar cells and a polyimide support, the support comprising a conductive layer on the top surface thereof divided into two electrically isolated portions—a first conductive portion and a second conductive portion. Each solar cell comprises a front surface, a rear surface, and a first contact on the rear surface and a second contact on the front surface. A the plurality of solar cells are placed on the first conductive portion with the first contact electronically connected to the first conductive portion. A second contact of each solar cell can be connected through the first conductive portion. A second contact of each solar cell can be connected to the second conductive portion. The two conductive portions serve as bus bars of two different polarities of the solar cell module.
A solar cell comprising an epitaxial sequence of layers of semiconductor material forming a solar cell deposited using an MOCVD reactor; a metal layer disposed on top of the sequence of layers of semiconductor material, the metal layer including a top surface layer composed of gold or silver; a polymer film; depositing a first metallic adhesion layer disposed on the polymer film that has a coefficient of thermal expansion substantially different from that of the top surface layer on one surface of the polymer film; a second metallic adhesion layer deposited over the first metallic adhesion layer and having a different composition from the first metallic adhesion layer and having no chemical elements in common; and the second metallic adhesion layer of the polymer film being permanently bonded to the metal layer of the sequence of layers of semiconductor material by a thermocompressive diffusion bonding technique.
A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein the upper first solar subcell covers less than the entire upper surface of the second solar subcell, leaving an exposed portion of the second solar subcell that lies in the path of the incoming light beam.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0475 - PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/056 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
The present disclosure provides a method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; affixing the adhesive polyimide surface of a permanent supporting substrate directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique; and removing the semiconductor growth substrate.
A back contact solar cell assembly and methods for its manufacture and assembly onto a panel for use in space vehicles are described. The solar cell assembly includes a compound semiconductor multijunction solar cell having a contact at the top surface of the solar cell, a conductive semiconductor element extending from the contact on the top surface to the back surface of the assembly where it forms a first back contact of a first polarity type, and a second back contact of a second polarity at the back surface of the assembly electrically coupled to the back surface of the solar cell.
A multijunction solar cell assembly and its method of manufacture including first and second discrete semiconductor body subassemblies, each semiconductor body subassembly including first, second and third lattice matched subcells; a graded interlayer adjacent to the third solar subcell and functioning as a lateral conduction layer; and a fourth solar subcell adjacent to said graded interlayer being lattice mismatched with respect to the third solar subcell; wherein the average band gap of all four cells is greater than 1.44 eV.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
68.
Multijunction solar cells having an indirect high band gap semiconductor emitter layer in the upper solar subcell
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/047 - PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
A back contact solar cell assembly and methods for its manufacture and assembly onto a panel for use in space vehicles are described. The solar cell assembly includes a compound semiconductor multijunction solar cell having a contact at the top surface of the solar cell, a conductive semiconductor element extending from the contact on the top surface to the back surface of the assembly where it forms a first back contact of a first polarity type, and a second back contact of a second polarity at the back surface of the assembly electrically coupled to the back surface of the solar cell.
A multijunction solar cell including a metamorphic layer, and particularly the design and specification of the composition, lattice constant, and band gaps of various layers above the metamorphic layer in order to achieve reduction in “bowing” of the semiconductor wafer caused by the lattice mismatch of layers associated with the metamorphic layer.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
A multijunction solar cell comprising at least a first subcell and a second subcell, a first alpha layer disposed over said first solar subcell grown using a surfactant and dopant including selenium or tellurium, the first alpha layer configured to prevent threading dislocations from propagating; a metamorphic grading interlayer disposed over and directly adjacent to said first alpha layer; a second alpha layer grown using a surfactant and dopant including selenium or tellurium over and disposed directly adjacent to said grading interlayer to prevent threading dislocations from propagating; wherein the second solar subcell is disposed over said grading interlayer such that the second solar subcell is lattice mismatched with respect to the first solar subcell.
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H01L 31/0336 - Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
74.
Multijunction metamorphic solar cell for space applications
A method of manufacturing a multijunction solar cell having an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a graded interlayer adjacent to the third solar subcell; and a fourth solar subcell adjacent to said graded interlayer and composed of a semiconductor material having a fourth band gap smaller than the third band gap and being lattice mismatched with respect to the third solar subcell; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/074 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
75.
Method of forming a multijunction metamorphic solar cell assembly for space applications
A multijunction solar cell assembly and its method of manufacture including interconnected first and second discrete semiconductor body subassemblies disposed adjacent and parallel to each other, each semiconductor body subassembly including first top subcell, second (and possibly third) lattice matched middle subcells; a graded interlayer adjacent to the last middle solar subcell; and a bottom solar subcell adjacent to said graded interlayer being lattice mismatched with respect to the last middle solar subcell; wherein the interconnected subassemblies form at least a four junction solar cell by a series connection being formed between the bottom solar subcell in the first semiconductor body and the bottom solar subcell in the second semiconductor body.
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
76.
Inverted metamorphic multijunction solar cells with doped alpha layer
A method of forming a multijunction solar cell comprising at least a first subcell and a second subcell, the method including forming a first alpha layer over said first solar subcell using a surfactant and dopant including selenium or tellurium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium or tellurium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming the second solar subcell over said grading interlayer such that the second solar subcell is lattice mismatched with respect to the first solar subcell.
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/065 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
H01L 31/078 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier including different types of potential barriers provided for in two or more of groups
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A solar cell panel or assembly including a string of solar cells, each solar cell having an oblique cut corner defining a space; a blocking diode positioned in correspondence with the space defined by said oblique cut corner; a first contact member connecting said blocking diode with the solar cell; a second contact member to connect said blocking diode to a metal bus bar; and a resistive element, connected in parallel to the blocking diode, between the first and the second contact members.
A multijunction solar cell and its method of fabrication, having an upper first solar subcell composed of a semiconductor material including aluminum and having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a first and second DBR structure adjacent to the third solar subcell; and a fourth solar subcell adjacent to the DBR structures and lattice matched with said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A multijunction solar cells that include one or more graded-index structures disposed directly above the growth substrate beneath a base layer of a solar subcells. In some embodiments, the graded-index reflector structure is constructed such that (i) at least a portion of light of a first spectral wavelength range that enters and passes through a solar cell above the graded-index reflector structure is reflected back into the solar subcell by the graded-index reflector structure; and (ii) at least a portion of light of a second spectral wavelength range that enters and passes through the solar cell above the graded-index reflector structure is transmitted through the graded-index reflector structure to layers disposed beneath the graded-index reflector structure. The second spectral wavelength range is composed of greater wavelengths than the wavelengths of the first spectral wavelength range.
A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 31/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/0687 - Multiple junction or tandem solar cells
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
84.
Multijunction solar cells having a graded-index reflector structure
A multijunction solar cells that include one or more graded-index reflector structures disposed beneath a base layer of one or more solar subcells. The graded-index reflector structure is constructed such that (i) at least a portion of light of a first spectral wavelength range that enters and passes through a solar cell above the graded-index reflector structure is reflected back into the solar subcell by the graded-index reflector structure; and (ii) at least a portion of light of a second spectral wavelength range that enters and passes through the solar cell above the graded-index reflector structure is transmitted through the graded-index reflector structure to layers disposed beneath the graded-index reflector structure. The second spectral wavelength range is composed of greater wavelengths than the wavelengths of the first spectral wavelength range.
The present disclosure provides interconnect elements and methods of using interconnect elements. In one embodiment, the interconnect element includes: a first end including at least three members, each member having a pair of parallel gap weld positions for mounting an adjoining first component; a second opposing end including at least two members, each member having a pair of parallel gap weld positions for mounting an adjoining second component; and one or more interconnect connecting portions to attach the first end of the interconnect element to the second end of the interconnect element.
A method of manufacturing an inverted metamorphic multijunction solar cell is disclosed herein. The method includes forming a lattice constant transition material positioned between a first subcell and a second subcell using a metal organic chemical vapor deposition (MOCVD) reactor. The solar cell further includes at least one distributed Bragg reflector (DBR) layer directly adjacent a back surface field (BSF) layer.
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/056 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/054 - Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
H01L 31/0687 - Multiple junction or tandem solar cells
An airfoil body for an aircraft extending from an inner end to an outer end, between a leading edge and a trailing edge and having a pressure surface and a suction surface, the airfoil body having an outer surface and an inner support structure, the outer surface including a fixed skin section and a movable skin section, wherein the movable skin section comprises a first portion including an array of transducer elements, and the airfoil body including an actuator for moving the movable skin section to selectively position the transducer elements on the outer surface.
The disclosure relates to an airfoil body for an aircraft extending from an inner end to an outer end, and between a leading edge and a trailing edge. The airfoil body comprises an internal structure and a skin covering the internal structure. The skin has a pressure side and a suction side, and the suction side includes a light transmitting portion. The internal structure includes an array of solar cells configured to receive solar light through the light transmitting portion. The present disclosure further relates to wings and aerial vehicles.
A method of bonding solar cell component to a support and the solar cell assembly thus obtained. The method of bonding solar cell component to a support comprises: disposing metallized traces on the support; dispensing bonding adhesive on front of the support or on back of the solar cell component; and laying down the solar cell component on the support and soldering the solar cell component to the metallized traces on the support. The support is a glass support with integrated circuits.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/042 - PV modules or arrays of single PV cells
H01L 31/0392 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
A vehicle such as an aircraft on which a solar cell assembly is mounted on a surface of the space vehicle. The solar cell assembly may be prepared on an assembly fixture. The solar cell assembly may then be removed from the assembly fixture and positioned on a top surface of the streamlined body of the vehicle. In examples, the solar cell assembly comprises a first film, an array of solar cells on top of the first film, and a second silicone film deposited over the solar cells.
The disclosure relates to a metallic interconnect member for connecting a first solar cell to a second solar cell. The interconnect member includes one or more serpentine paths having substantially perpendicular loops. The interconnect member may include two connection pads for connecting to the first solar cell. A further connection pad for connecting to a bypass diode may be included. The disclosure further relates to a string of solar cells including a first and a second solar cell connected by an interconnect member.
H01L 31/0693 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
H01L 31/0735 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
H01L 31/0725 - Multiple junction or tandem solar cells
H01L 31/0687 - Multiple junction or tandem solar cells
95.
Flexible solar array and method for fabricating the same
A flexible solar cell assembly and methods for its manufacture are described. The flexible solar cell assembly comprises: solar cells comprising opposing top and back surfaces of different polarities, a contact at the top surface and a contact at the back surface; a flexible substrate; and conductive traces having end portions bonded to the top and bottom contacts of different solar cells so as to interconnect them in electrical series.
H02N 6/00 - Generators in which light radiation is directly converted into electrical energy (solar cells or assemblies thereof H01L 25/00, H01L 31/00)
H01L 31/05 - Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
H01L 31/0465 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
H01L 31/02 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof - Details
A solar cell panel or assembly including a string of solar cells, each solar cell having an oblique cut corner defining a space; a blocking diode positioned in correspondence with the space defined by said oblique cut corner; a first contact member connecting said blocking diode with the solar cell; a second contact member to connect said blocking diode to a metal bus bar; and a resistive element, connected in parallel to the blocking diode, between the first and the second contact members.
Methods of fabricating a solar cell assembly for streamlined bodies are provided. The solar cell assembly may be prepared on an assembly fixture. The solar cell assembly may then be removed from the assembly fixture and positioned on a top surface of the streamlined body. In examples, the solar cell assembly comprises a first film, an array of solar cells on top of the first film, and a second silicone film deposited over the solar cells.
