A fully differential power amplifier has an input matching network, a plurality of stacked transistors connected by a plurality of inter stack networks (ISNs), and an output matching network for amplification and conditioning of signal components. The differential amplifier uses a modified cascode FET topology with the FETs connected by gate decoupling capacitors to strongly attenuate common mode oscillations and eliminate the need for a source degeneration inductor or matching transformer. Inter stack networks provide signal conditioning and filtering between amplification stages to improve amplifier performance metrics such as long-term reliability, output power, and efficiency.
H03F 3/195 - High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
H03F 1/22 - Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
H03F 1/56 - Modifications of input or output impedances, not otherwise provided for
H03F 3/24 - Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
An adjustable filter having a first contact; a second contact; and one or more switchable resonator circuits coupled between the first contact and the second contact, each switchable resonator circuit including a switch, a first impedance, and a resonator coupled in parallel with a second impedance, a parallel combination of the resonator and second impedance being coupled in series with the first impedance.
A method of providing intra-module electromagnetic interference shielding includes providing a strip that includes a plurality of electronic package modules spaced apart. The method can include providing an electromagnetic interference shielding arrangement including a preformed shield wall and moving the electromagnetic interference shielding arrangement relative to the strip. The preformed shield wall can be disposed on a surface of the strip. An inner portion of the preformed shield wall can be located within a perimeter of a first module electronic package modules. An outer portion of the preformed shield wall can be located outside the perimeter of the first module. The first module can be separated from the strip so as to fracture the preformed shield wall along the perimeter of the first module. The inner portion can define at least part of an intra-module electromagnetic interference shield for the first module.
Beamforming in radio frequency (RF) communication systems using frequency division duplexing (FDD) is disclosed. In one aspect, a front end system includes a power amplifier, a transmit filter electrically connected to an output of the power amplifier and passing an uplink frequency range of a frequency band, a receive filter passing a downlink frequency range of the frequency band, a low noise amplifier (LNA), and a switch having a first state in which the switch electrically connects an input of the LNA to the receive filter and a second state in which the switch electrically connects the output of the power amplifier to the receive filter. The front end system is operable in an FDD mode in which the front end system simultaneously sends a transmit beam on the uplink frequency range of the frequency band and receives a receive beam on a downlink frequency range of the frequency band.
H04B 7/06 - Diversity systemsMulti-antenna systems, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station
H04B 7/08 - Diversity systemsMulti-antenna systems, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station
H04L 5/14 - Two-way operation using the same type of signal, i.e. duplex
5.
ELECTRONIC PACKAGE MODULES WITH INTRA-MODULE ELECTROMAGNETIC INTERFERENCE SHIELDING
A strip of electronic package modules can include electronic package modules spaced apart from and coupled to each other over an area of the strip. The strip can further include an electromagnetic interference shielding arrangement including a preformed shield wall. The preformed shield wall can be disposed on a surface of the strip. The preformed shield wall can include one or more inner portions. The one or more inner portions can be located within a perimeter of a first module of the plurality of electronic package modules. The preformed shield wall can further include one or more outer portions. The one or more outer portions can be located outside the perimeter of the first electronic package module. The one or more inner portions of the preformed shield wall can define at least part of an intra-module electromagnetic interference shield for the first electronic package module.
Apparatus and methods for delay calibration of load modulated power amplifiers and envelope trackers are disclosed herein. In certain embodiments, a load modulated power amplifier system includes a power amplifier that receives a radio frequency (RF) signal at an input, a controllable load impedance coupled to an output of the power amplifier and having an impedance modulated by an envelope control signal, and a calibration circuit that selects a time delay for aligning the envelope control signal to the RF signal. The time delay is selected based at least partly on an error vector magnitude (EVM) detected at the output of the power amplifier.
According to the present disclosure there is provided a front-end module comprising a first antenna port and a second antenna port, a first filter forming a first signal path with the first antenna port and a second filter forming a second signal path with the second antenna port, the first or second filter being an adjustable filter. There is also provided a wireless device.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
Systems and methods for tuning multiplexer filters are disclosed. In one aspect, a multiplexer includes a first filter coupled to a common node, the first filter configured to pass a first band, a second filter coupled to the common node, the second filter configured to pass a second band, and at least one electrical component configured to generate a notch at a frequency between the first band and the second band.
A packaged module can include a packaging substrate having a first side and a second side, and an overmold implemented on the second side of the packaging substrate, with the overmold defining a mounting surface to allow mounting of the packaged module on a circuit board. The packaged module can further include a plurality of conductive features implemented on the second side of the packaging substrate to provide electrical connections for the packaged module. The conductive features can be formed from conductive material that does not melt during a mounting operation, and each conductive feature can have a surface that is substantially coplanar with or recessed with respect to the mounting surface. The packaged module can further include a solderable material layer dimensioned to cover the surface of each conductive feature.
A radio-frequency switch can include a first node and a second node, and a plurality of transistors implemented in a stack configuration between the first node and the second node, with each transistor having a source, a drain and a gate. The switch can further include a bias circuit configured to bias the transistors from a bias node. The bias circuit can include a gate-gate resistor that couples each pair of neighboring transistors of the plurality of transistors, and a feed node coupled to the bias node, with the feed node being connected directly to the gate of a selected transistor of the plurality of transistors.
H03K 17/687 - Electronic switching or gating, i.e. not by contact-making and -breaking characterised by the use of specified components by the use, as active elements, of semiconductor devices the devices being field-effect transistors
H03K 17/00 - Electronic switching or gating, i.e. not by contact-making and -breaking
H03K 17/693 - Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
09 - Scientific and electric apparatus and instruments
Goods & Services
Semiconductor devices; semiconductor device for use in telecommunications equipment; electrical and electronic components, namely, multichip integrated circuits; integrated circuits; semiconductor devices and electronic devices, namely, electronic motor control circuits for use in telecommunications equipment; electronic apparatus and electronic devices for conducting, switching, transforming, accumulating, regulating, and controlling electricity; electronic circuits for use in evaluating or demonstrating semiconductors and semiconductor devices; electrical, electronic, optoelectronic, and microelectronic components, namely, multichip integrated circuits; semiconductor devices and electronic devices, namely, isolated gate drivers for power supply and application interfaces; optocouplers; Power management, regulation, isolation, and protection components for use in electronic systems, namely, isolated gate drivers; electrical and electronic components, namely, isolated gate drivers for power management, regulation, isolation and protection; integrated circuits, and semiconductor devices for power management, regulation, isolation, and protection
A radio frequency filter packaging structure includes signal pads disposed on a first surface of a substrate. The signal pads include a first signal pad positioned near a first side of the substrate. A second signal pad positioned near a second side of the substrate is located away from the first side. A third signal pad is positioned near a third side of the substrate. A fourth signal pad is positioned near a fourth side of the substrate which is located away from the third side. A first elongated ground pad is disposed on the first surface and positioned between the first signal pad and the second signal pad. A second elongated ground pad is disposed on the first surface and positioned between the third signal pad and the fourth signal pad. The first and second elongated ground pads are electrically connected to a ground via a ground connection.
H03H 1/00 - Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
H03F 3/24 - Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
A stacked acoustic wave device assembly is disclosed. The stacked acoustic wave device assembly can include a first acoustic wave device that includes a first substrate, a first piezoelectric layer, a first solid acoustic mirror that is disposed between the first substrate and the first piezoelectric layer, and a first interdigital transducer electrode that is in contact with the first piezoelectric layer. The stacked acoustic wave device assembly can include a second acoustic wave device that includes a second substrate, a second piezoelectric layer, a second solid acoustic mirror that is disposed between the second substrate and the second piezoelectric layer, and a second interdigital transducer electrode that is in contact with the second piezoelectric layer. The second acoustic wave device is stacked over the first acoustic wave device. The first acoustic wave device and the second acoustic wave device are spaced by a spacer assembly such that a cavity is formed between the first acoustic wave device and the second acoustic wave device.
H03H 9/205 - Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Apparatus and methods for amplifier linearization are disclosed. In certain embodiments, an RF amplifier includes an RF input terminal that receives an RF input signal, an RF output terminal that provides an RF output signal, a gallium nitride field-effect transistor (GaN FET) having a gate connected to the RF input terminal and a drain connected to the RF output terminal. The GaN FET amplifies the RF input signal. The RF amplifier further includes a gallium arsenide field-effect transistor (GaAs FET) having a gate connected to the RF input terminal and a drain connected to the RF output terminal. The GaAs FET is operable to linearize the GaN FET.
Aspects of this disclosure relate to a multiplexer that includes a first filter and a second filter coupled to a common node. The first filter includes an acoustic filter arranged to filter a radio frequency signal, a matching network coupled between the acoustic filter and the common node, and a parallel circuit coupled in series between the acoustic filter and the common node. The parallel circuit includes an inductive component in parallel with a capacitive component. In certain instances, the first filter is coupled to the common node via a switch, the matching network is coupled to a node between the acoustic filter and the switch, and the parallel circuit is coupled in series between the acoustic filter and the switch. Related methods, radio frequency modules, and wireless communication devices are also disclosed.
Aspects of this disclosure relate to determining a spectrum mode of a Convergent Digital Radio signal. The Convergent Digital Radio signal can be filtered by a plurality of filters. Correlation coefficients can be generated from filtered signals, in which each correlation coefficient corresponds to a particular spectrum mode. The spectrum mode can be selected based on the correlation coefficients.
An integrated device package is disclosed. The integrated device package can include a carrier that has an opening extending at least partially through a thickness of the carrier. The integrated device package can include a microelectronicmechanical systems die that is at least partially disposed in the opening and mechanically and electrically coupled to the carrier. The integrated device package can include a lid that is coupled to the carrier. The lid and the microelectronicmechanical systems die are spaced by a gap defining a back volume.
An acoustic wave device is disclosed. The acoustic wave device can include a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first substrate portion and the second substrate portion. The acoustic wave device can also include a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion. The piezoelectric layer can be arranged such that a region over the third substrate portion is free from the piezoelectric layer. The acoustic wave device can also include a first interdigital transducer electrode on the first portion of the piezoelectric layer. The acoustic wave device can further include a second interdigital transducer electrode on the second portion of the piezoelectric layer.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H03H 9/145 - Driving means, e.g. electrodes, coils for networks using surface acoustic waves
An acoustic wave resonator is disclosed. The acoustic wave resonator can include a plurality of interdigital transducer electrodes and a multilayer piezoelectric substrate (MPS) adjacent the plurality of interdigital transducer electrodes. The MPS includes a first substrate layer of a piezoelectric material, and a second substrate layer of silicon that is bonded to the first layer. The silicon has a cut direction and/or acoustic wave propagation direction that is different from those of a silicon substrate. The silicon substrate has a cut direction and a propagation direction property defined by the silicon cut angle and the propagation direction.
A power amplifier comprises a first transistor, a first transformer, a first variable resistor, a first bias circuit and coupling circuitry configured to couple the first transformer, a first end of the first variable resistor, and a collector of the first transistor at a first node, the first transformer and a second end of the first variable resistor at a second node, and the bias circuit and a base of the first transistor at a third node.
An integrated device package is disclosed. the integrated device package can include a carrier, an electronic component mounted on the carrier, a molding material disposed over the carrier, and an electromagnetic interference shield layer disposed over the molding material. The electronic component is at least partially disposed in the molding material. At least a portion of the shield layer is in contact with the electronic component. The electromagnetic interference shield layer is configured to shield the electronic component from a radio frequency signal. A surface of the electromagnetic interference shield layer includes an ink mark or a laser mark.
Acoustic wave device is disclosed. the acoustic wave device can include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a non-zero tilt angle. The non-zero tilt angle can between 5° to 15°. A thickness of the interdigital transducer electrode is at least 40% of a thickness of the piezoelectric layer, 400nm, or 0.08λ where λ is the wavelength generated by the acoustic wave device.
An acoustic wave filter includes a substrate and a piezoelectric layer over the substrate. First acoustic wave resonators are disposed over the piezoelectric layer and arranged in series along a first branch, and second acoustic wave resonators are disposed over the piezoelectric layer, arranged in parallel, and connected to the first branch and to ground. The first and second acoustic wave resonators include an interdigital transducer electrode interposed between a pair of reflectors. A layer of negative temperature coefficient of frequency dielectric material is disposed over one or more of the second plurality of acoustic wave resonators to control the temperature coefficient of frequency and improve temperature stability of the acoustic wave filter.
Capacitive digital-to-analog converters (DACs) with shaped output current are disclosed. A capacitive DAC converter cell for a capacitive DAC includes a capacitor connected between an output terminal and an internal node, a first current source, a first switch connected in series with the first current source between the internal node and a first voltage, a second current source, a second switch connected in series with the second current source between the internal node and a second voltage, a third switch connected between the internal node and the first voltage, and a fourth switch connected between the internal node and the second voltage.
A radio-frequency amplification system can be achieved by providing an input signal to a variable size array of transistors of an amplifier and amplifying the input signal with the array to generate an amplified signal. One or more conditions associated with the amplifier can be monitored, and a control signal can be generated based on the monitored condition(s) to adjust the size of the array.
Aspects and embodiments disclosed herein include a method of forming copper pillars on a semiconductor substrate. The method comprises disposing a screen printing stencil above the semiconductor substrate, screen printing a copper paste through apertures in the screen printing stencil on to the semiconductor substrate, and sintering the copper paste to form discrete copper pillars.
An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, a temperature compensation layer over the interdigital transducer electrode, and a dielectric layer positioned partially between the piezoelectric layer and the interdigital transducer electrode. The dielectric layer is positioned in an area under a first portion of the interdigital transducer electrode. An area under a second portion different from the first portion is free from the dielectric layer.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
Increased radiated power using multiple antennas is disclosed. In certain aspects, power spectral density limitations on a per antenna basis can be met while increasing radiated power for a shared channel by transmitting the signal over multiple antennas. Further aspects relate to allocating a monolithic block of modulation as a single cluster to minimize the required power back-off and maximize power density.
Aspects and embodiments disclosed herein include a method of forming copper pillars on a semiconductor substrate. The method comprises depositing a layer of a first photoresist on the substrate, exposing the first photoresist, depositing a layer of a second photoresist on the layer of the first photoresist, forming an aperture in the layer of the second photoresist by exposing and developing a portion of the layer of the second photoresist, forming a cavity in the layer of the first photoresist below the aperture in the layer of the second photoresist, depositing copper paste within the cavity, and sintering the copper paste.
A radio frequency circuit assembly is disclosed. An example radio frequency circuit assembly comprises a plurality of antenna switch modules, where each antenna switch module is coupled to a transmit signal contact via a transmit band filter, a plurality of receive signal contacts via a respective plurality of receive band filters, and a plurality of antenna contacts. The antenna switch modules are configured such that each of the plurality of antenna contacts are selectively coupled to the transmit signal contact.
H01Q 5/307 - Individual or coupled radiating elements, each element being fed in an unspecified way
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
H04B 7/06 - Diversity systemsMulti-antenna systems, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station
31.
ACOUSTIC DEVICES WITH RESIDUAL STRESS COMPENSATION
An acoustic sensor (e.g., for use in a piezoelectric MEMS microphone) includes a substrate and a cantilever beam attached to the substrate. The cantilever beam has a proximal portion attached to the substrate and extends to a distal tip at a free end thereof. The cantilevered beam has a multilayer structure with a plurality of piezoelectric layers and a plurality of metal electrode layers, at least a portion of one of the piezoelectric layers interposed between two metal electrode layers. One or more direct current voltage sources are electrically connected to one or more of the plurality of metal electrode layers and configured to apply a direct current bias voltage between at least two of the plurality of metal electrode layers to deflect the cantilever beam to at least partially counteract a deflection of the cantilever beam due to a residual stress in the cantilever beam.
Disclosed is a radio frequency front-end (RFFE) architecture for sounding reference signal (SRS) antenna switching using a first power amplifier module (PAM) and a remote module (second PAM) to control local and remote antennas. The modules include various transmit and receive signal paths, power amplifiers and low-noise amplifiers, filters for signal conditioning, and switch blocks comprising a plurality of switches for selectively routing the signal paths. In certain embodiments, external bypass ports may be included to increase the connectivity of the modules and provide for additional operating modes of the FE. The FE SRS architecture advantageously reduces insertion losses (including switching losses), reduces component count and the number of external connections to the FE, and can provide improved isolation performance in a compact package.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
33.
CHIP WITH DIFFERENT TYPES OF RESONATORS AND RELATED TIMING PRODUCTS
Aspects of this disclosure relate to a chip that includes two types of resonators with different properties. For example, the chip can include a piezoelectric microelectromechanical systems (MEMS) resonator and an electrostatic MEMS resonator. One type of resonator can provide lower phase noise than the other type of resonator, and the other type of resonator can have less variation over temperature. A phase-locked loop can receive reference signals from the two types of resonators. Related MEMS resonator chips, timing products, and methods are disclosed.
H03L 7/07 - Automatic control of frequency or phaseSynchronisation using a reference signal applied to a frequency- or phase-locked loop using several loops, e.g. for redundant clock signal generation
Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, a respective finger of one IDT electrode being separated from an adjacent finger of the other IDT electrode by a first pitch distance, and reflectors formed on the substrate interposing the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, each of the reflectors including a plurality of fingers separated from each other by a second pitch distance and extending in a same direction of extension as the plurality of fingers of the pair of IDT electrodes.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
35.
COMPENSATED REGULATION FOR PULSE-WIDTH MODULATION AMPLIFIERS
An audio signal can be amplified by providing an audio signal to an input of an amplifier, and amplifying the audio signal based on pulse width modulation to provide the amplified audio signal at an output node. A feedback can be provided from the output node to the input node, and include passing a feedback signal through a high bandwidth input common mode loop and through a low bandwidth output common mode loop, and introducing a desired phase change with the low bandwidth output common mode loop for the high bandwidth input common mode loop.
Envelope tracking power amplifiers with advanced gain shaping are provided. In certain implementations, a power amplifier system includes a power amplifier that amplifies a radio frequency (RF) signal and an envelope tracker that controls a voltage level of a supply voltage of the power amplifier based on an envelope of the RF signal. The power amplifier system further includes a gain shaping circuit that generates a gain shaping current that changes with the voltage level of the supply voltage from the envelope tracker. For example, the gain shaping circuit can include an analog look-up table (LUT) mapping a particular voltage level of the supply voltage to a particular current level of gain shaping current. Additionally, the gain shaping circuit biases the power amplifier based on the gain shaping current.
A system, radio architecture, and/or wireless device may include a transceiver and/or a first front-end module (FEM) directly coupled to the transceiver and providing coverage of multiple bands of a wireless network. The device may include a first switch directly coupled to the first front-end module. The device may include a first filter directly coupled to the first switch. The device may include a second filter directly coupled to the first switch. The device may include a second switch directly coupled to the first filter and the second filter. The device may include a first antenna coupled to the second switch.
H01Q 5/342 - Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes
H01Q 3/24 - Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the orientation by switching energy from one active radiating element to another, e.g. for beam switching
H01Q 5/20 - Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements characterised by the operating wavebands
38.
OSCILLATOR CIRCUITS HAVING DELTA-SIGMA MODULATED INJECTION
An oscillator circuit can include an oscillator configured to provide an output signal having a frequency based on a first oscillation signal having a frequency. The oscillator circuit can further include a digital calibration circuit configured to inject a calibration signal to the oscillator during a startup process to allow the frequency of the output signal to be established at a desired frequency. The digital calibration circuit can include a delta-sigma modulator configured to generate the calibration signal based on a digital control word.
H03B 5/36 - Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
H03M 3/00 - Conversion of analogue values to or from differential modulation
39.
BALANCED SPEECH RECONSTRUCTION AND NOISE SUPPRESSION USING DUAL-ASYMMETRIC LOSS
An audio processor can include a circuit configured to provide a digital signal representative of a sound, and a digital signal processor configured to process the digital signal. The digital signal processor can be configured to process an enhancement model and including a loss function having a first penalty term selected to control sound reconstruction, and a second penalty term selected to control noise suppression. The first and second penalty terms can be weighted by an adjustable parameter to allow the enhancement model to be tuned for quality of sound or performance of noise suppression.
G10L 21/0264 - Noise filtering characterised by the type of parameter measurement, e.g. correlation techniques, zero crossing techniques or predictive techniques
40.
METHOD AND AN APPARATUS FOR GENERATING AN OUTPUT CLOCK IN A MULTI-LOOP PLL SYSTEM
A multi-loop clock signal generator includes a first phase-locked loop circuit configured to generate a control signal and a voltage-controlled oscillator configured to generate an output clock signal based on the control signal. The clock signal generator includes a second phase-locked loop circuit configured to generate an adjusted first divider value for the first phase-locked loop circuit. The clock signal generator further includes a target frequency calculation circuit configured to calculate a target frequency for the second phase-locked loop circuit based on a target frequency ratio of the second phase-locked loop circuit calculated based on frequency offset ratios of the first and second clock signals with respect to a reference signal.
H03L 7/099 - Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
H03L 7/195 - Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop a time difference being used for locking the loop, the counter counting between fixed numbers or the frequency divider dividing by a fixed number in which the counter of the loop counts between two different non zero numbers, e.g. for generating an offset frequency
41.
PACKAGED SURFACE ACOUSTIC WAVE DEVICE WITH CONDUCTIVE ROOF SUPPORTING STRUCTURE
A packaged surface acoustic wave device is disclosed. The packaged surface acoustic wave device can include a support substrate that has a first side and a second side opposite the first side. The support substrate including a conductive via extending vertically between the first side to the second side. The packaged surface acoustic wave device can include a piezoelectric layer over the first side of the support substrate, an interdigital transducer electrode over the piezoelectric layer, a roof structure over the interdigital transducer electrode, and a conductive pillar between the first side of the support substrate and the roof structure. The conductive pillar supports the roof structure and defines at least a portion of an electrical pathway between the interdigital transducer electrode and the conductive via. A maximum horizontal dimension of the conductive pillar is greater than a maximum horizontal dimension of the conductive via.
H03H 9/25 - Constructional features of resonators using surface acoustic waves
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Systems and methods for asynchronous data flow in digital radios are provided. In one aspect, a demodulator circuit includes a receiver circuit configured to receive: a plurality of samples of a radio frequency signal received from a tuner, a clock, and a target size value, the receiver circuit further configured to output the samples at a first rate based on the target size value. The demodulator circuit also includes a sample rate converter configured to receive the samples from the receiver circuit and output the samples at a second rate based on a rate offset value, and a buffer configured to receive the samples from the sample rate converter and output the samples. The demodulator circuit further includes a digital demodulator configured to receive the samples from the buffer and demodulate the samples, and a control loop configured to generate the target size value.
Metal-semiconductor field-effect transistors (MESFETs) for gallium arsenide (GaAs) technologies are disclosed herein. In certain embodiments, a semiconductor wafer includes a substrate, a GaAs channel layer formed over the substrate, an etch stop layer formed over the GaAs channel layer, and a GaAs subcollector layer formed over the etch stop layer. The GaAs subcollector layer is patterned to form a source region and a drain region for a GaAs MESFET, as well as a recess between the source region and the drain region. Additionally, a metal gate of the MESFET is formed over the etch stop layer in the recess.
H10D 84/40 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or with at least one component covered by groups or , e.g. integration of IGFETs with BJTs
H10D 30/87 - FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
A device may include a carrier path including a first carrier amplifier. A device may include a peaking path including a first peaking amplifier. A device may include a phase shifter comprising a first reactance component, the phase shifter coupled to an input of the first carrier amplifier and configured to shift a phase of the carrier path.
A surface acoustic wave device is disclosed. The surface acoustic wave device can include a ceramic substrate, a piezoelectric layer over the ceramic substrate, and an interdigital transducer electrode over the piezoelectric layer. The ceramic substrate can be a polycrystalline spinel substrate. The surface acoustic wave device can also include a temperature compensating layer over the interdigital transducer electrode.
A surface acoustic wave device is disclosed. The surface acoustic wave device includes a multi-layer piezoelectric substrate including a support substrate and a piezoelectric layer, an interdigital transducer electrode in electrical communication with the piezoelectric layer, and a slit positioned in a wave propagation direction of the interdigital transducer electrode. The slit can have a depth extending at least partially through a thickness of the multi-layer piezoelectric substrate.
A stacked die package comprising: a first semiconductor die including a front side, a back side that is opposite to the front side, and one or more through substrate vias within the first semiconductor die vertically connecting the front side and the back side of the first semiconductor die; a second semiconductor die including a front side and a back side that is opposite to the front side; and a bonding structure between the back side of the first semiconductor die and the front side of the second semiconductor die and configured to create a connection path from the front side of the second semiconductor die to the one or more through substrate vias of the first semiconductor die at the back side of the first semiconductor die.
A filter module for multiple carrier aggregation is provided which includes: a substrate having a first side and a second side, a plurality of filters disposed on the first side, a plurality of signal terminals disposed on the second side, each selectively connected to at least one of the plurality of filters and a ground plane disposed on the second side, wherein the ground plane is arranged to substantially surround each signal terminal on the second side and a method of improving cross isolation in a multiple carrier aggregation filter module, where the filter module includes a plurality of filters disposed on a first side of a substrate and a plurality of signal terminals on a second side of a substrate, and where the method includes disposing a ground plane on the second side wherein the ground plane is arranged to substantially surround each signal terminal on the second side.
Aspects of this disclosure relate to a multiplexer with a hybrid acoustic passive filter. The multiplexer includes a plurality of filters configured to filter respective radio frequency signals, a shared filter coupled between each of the plurality of filters and a common node, and a radio frequency filter coupled to the common node. At least a first filter of the plurality of filters includes acoustic resonators and a non-acoustic passive component. Related multiplexers, wireless communication devices, and methods are disclosed.
A stacked acoustic wave device assembly is disclosed. The stacked acoustic wave device assembly can include a first acoustic wave device including a first double acoustic mirror structure having a first solid acoustic mirror and a second solid acoustic mirror, and a first piezoelectric layer between the first and second solid acoustic mirrors. The stacked acoustic wave device assembly can include a second acoustic wave device including a second double acoustic mirror structure having a third solid acoustic mirror and a fourth acoustic mirror, and a second piezoelectric layer between the third and fourth acoustic mirrors. The second acoustic wave device is vertically stacked on the first acoustic wave device such that the second solid acoustic mirror and the fourth solid acoustic mirror are positioned between the first and second piezoelectric layers.
Remote compensators for mobile devices are provided. In certain embodiments, a remote compensator includes a first balun, a cable-side circulator including an output that provides a transmit signal and an input that receives an amplified receive signal, a first phase shifter, a second phase shifter, a first antenna-side circulator, a second antenna-side circulator, transmit amplifier circuitry, and a receive amplifier that generates the amplified receive signal by amplifying a first receive signal from the first antenna-side circulator and a second receive signal from the second antenna-side circulator. The transmit amplifier circuitry includes an input that receives the transmit signal, a first output connected to a first end of a winding of the first balun through the first antenna-side circulator and the first phase shifter, and a second output connected to a second end of the winding of the first balun through the second phase shifter and the second antenna-side circulator.
A method for electrically isolating an electrical component in preparation for plasma cleaning. The method comprises dispensing a layer of electrically non-conductive epoxy onto the electrical component so as to cover the electrical component with the electrically non-conductive epoxy. The method further comprises curing the electrically non-conductive epoxy so as to electrically isolate the electrical component.
A probe card for testing or trimming or programming a semiconductor wafer including a first die including a first integrated circuit having a trimmable or programmable component. The probe card including at least one probe arranged to make electrical contact with at least one probe pad arranged on the wafer. The at least one probe pad being electrically connected to the trimmable or programmable component and being arranged in a saw street of the wafer.
A method of manufacturing a surface acoustic wave resonator includes forming or providing a support substrate layer, forming or providing piezoelectric layer of lithium niobate over the support substrate layer, and forming or providing an interdigital transducer electrode including a plurality of fingers over the piezoelectric layer. The piezoelectric layer formed or provided having a cut angle (e.g., the piezoelectric angle is cut so as to have a crystal orientation) that allows the surface acoustic wave device to operate as a longitudinally leaky surface acoustic wave device that confines the acoustic wave energy within the piezoelectric substrate and that has less propagation attenuation and a higher electromechanical coupling coefficient k2.
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
H03H 9/145 - Driving means, e.g. electrodes, coils for networks using surface acoustic waves
In some embodiments, a charge pump for a switching circuit can be operated by a method that includes driving a plurality of units of the charge pump with respective clock signals having different phases, such that the plurality of units provide respective output voltages, and combining the output voltages of the plurality of units into an output voltage of the charge pump. The method can further include comparing a scaled value of the output voltage of the charge pump with a reference voltage to generate a comparator output voltage, and shifting the comparator output voltage to a level of the output voltage of the charge pump.
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
A packaged acoustic wave device is disclosed. Ther packaged acoustic wave device can include an interdigital transducer capacitor, a support pillar over the interdigital transducer capacitor, and a packaging roof structure coupled to the support pillar. The support pillar can include an insulating material. The packaged acoustic wave device can include a signal line over the insulating material. The signal line can be electrically coupled to a signal terminal of an acoustic wave device. The support pillar or insulating material can increase capacitance while reducing lateral dimensions of the packaged acoustic wave device.
Aspects of this disclosure relate to acoustic wave filters that include different types of acoustic wave resonators for series resonators and shunt resonators. In certain embodiments, an acoustic filter component includes a first die including surface acoustic wave resonators and a second die including bulk acoustic wave resonators. An interdigital transducer electrode of a surface acoustic wave resonator can be a side of the first die. An electrode of a bulk acoustic wave resonator can be on a side of the second die facing the side of the first die with the interdigital transducer electrode thereon. An acoustic wave filter can include series resonators on one of the first and second die and shunt resonators on the other of the first and second die.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
58.
CONVERGED 2G AND 5G RF FRONT END MODULE WITH MULTI-MODE BALUN
A radio frequency front-end module comprising: a module substrate; a semiconductor die attached to the module substrate, the semiconductor die including a power amplifier system formed on the semiconductor die and configured to amplify a radio frequency signal input to the radio frequency front-end module; an output matching network comprising a multi-mode balun formed on the module substrate, the multi-mode balun configured to tune the radio frequency signal to at least a first output mode having a first output power level in a first output frequency range and a second output mode having a second output power level in a second output frequency range, the multi-mode balun having an input side coupled to the power amplifier system and an output side including a plurality of output terminals directing the radio frequency signal from the power amplifier to the at least first and second output modes.
A filter module has a first terminal, a second terminal, and at least one filter disposed along each signal path extending from the first terminal to the second terminal. The filter can include a plurality of series resonators and a plurality of shunt resonators disposed between the series resonators and a ground configured to enhance power ruggedness of the filter module. A matching circuit coupled to the filter performs impedance matching of the filter.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
Configurable filter bands for radio frequency communication are disclosed. In one aspect, a radio frequency module includes a plurality of n-plexers, each of the n-plexers including n filters, each of the filters configured to pass at least one radio frequency band, and at least two of the radio frequency bands having overlapping frequencies, an antenna terminal, and an antenna switch module configured to connect two or more of the n-plexers to the antenna terminal.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
An acoustic wave device can have a plurality of coupling portions configured to electrically couple electrodes of the device to the substrate of the device to provide a bypass current pathway through the substrate for heat management. The substrate can be a semiconductor material, which can become more conductive as the temperature increases so that the bypass current pathway diverts more power through the substrate as the temperature increases. The acoustic wave device can be a surface acoustic wave device, which can have an interdigital transducer electrode that has the coupling portions on each of the bus bars and extending through the piezoelectric layer to contact the substrate. The acoustic wave device can be a bulk acoustic wave device in some implementations.
A power amplifier comprises a first amplification stage having an input terminal receiving a radio frequency (RF) signal to be amplified and having a first coupling unit, a second amplification stage outputting an amplified radio frequency signal and having a second coupling unit and a third coupling unit providing RF feedback to the input terminal of the first amplification stage through an RF feedback path, the second coupling unit being coupled to the first coupling unit, and the third coupling unit being coupled to the first coupling unit.
A longitudinally leaky surface acoustic wave device is disclosed. The longitudinally leaky surface acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode over the piezoelectric layer, and a second solid acoustic mirror over the over the interdigital transducer electrode. The interdigital transducer electrode is configured to generate an acoustic wave that propagates in a lateral direction. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave. The piezoelectric layer can have a cut angle of (90±30, 90±30, 40±30).
Apparatus and methods for balun transformer circuits within electronic devices are provided. In certain embodiments, balun transformer circuits are used for reduction of an impedance of a differential load line of a differential power amplifier.
H03H 7/42 - Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
H02M 3/157 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with digital control
A method of providing an audio processing model is provided. The method comprises providing, over a network, an initial audio processing model to a first user device and a second user device; receiving first user data from the first user device and second user data from the second user device; updating the initial audio processing model to generate a first updated audio processing model based on the first user data; updating the initial audio processing model to generate a second updated audio processing model based on the second user data; and providing, over the network, the first updated audio processing model to the first user device and the second updated audio processing model to the second user device. Related methods and devices are also provided.
Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In particular, a two-phase material can form based on the rutile phase of titanium oxide along with a spinel structure of ZnAl2O4. This material can have a dielectric constant below 15 which is simultaneously temperature stable.
C04B 35/478 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on titanium oxides or titanates based on titanates based on aluminium titanates
C04B 35/44 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminates
C04B 35/626 - Preparing or treating the powders individually or as batches
A surface acoustic wave device can have a piezoelectric layer and at least one interdigital transducer electrode thereon with a trapezoidal shape. This can be useful to fill dead space or voids between nonparallel elements on the layer. For example, an array with ranks of slanted interdigital transducer electrodes may not be aligned with non-slanted elements (e.g., a surface acoustic wave filter). This can leave voids or openings with unused portions of the piezoelectric layer. Trapezoidal elements such as those described here can solve this problem and help suppress transverse modes.
A power amplifier system for amplifying a radio frequency signal can have a driver transistor coupled to a radio frequency signal input. The system can also have a transformer balun with a main primary coil connected between the driver transistor and a voltage supply node of the power amplifier system, a secondary coil magnetically coupled to the main primary coil, and an additional primary coil configured to generate a feedback signal related to a signal induced in the main primary coil. A neutralization diode can be configured to use the feedback signal to reduce a gain variation resulting from variations in a voltage supplied from the voltage supply node of the power amplifier system. The neutralization diode can be connected between the additional primary coil and the driver transistor. Through envelope tracking, voltage supplied through the voltage supply node can change in relation to an envelope of the radio frequency signal.
A piezoelectric microelectromechanical system microphone has a piezoelectric sensor layer with at least two sensing electrodes and at least one piezoelectric layer. Each piezoelectric layer can deform and generate an electrical potential responsive to impingement of sound waves on the piezoelectric layer. The sensing electrodes and the at least one piezoelectric layer form a stacked electrode structure. Each sensing electrode is disposed on or below a corresponding piezoelectric layer and senses the generated electrical potential. At least one of the sensing electrodes can include first corrugations which are configured such to release residual stress and to improve sensitivity of the microelectromechanical system microphone.
H10N 30/067 - Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts
H10N 30/074 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
An amplifier circuit comprising a power amplifier and a protection circuit coupled to the power amplifier. The protection circuit is configured to detect an overdrive condition and, in response to detecting an overdrive condition, apply a clamping status to the protection circuit to reduce a bias current to the power amplifier. The protection circuit has a capacitor and a recovery circuit including: a sensing component configured to monitor a change of charging and discharging currents to and from the capacitor respectively during the clamping status; a first device configured to set a time constant of the recovery circuit; and a second device configured to reset the protection circuit to remove the clamping status when the change of charging or discharging current is beyond a predetermined threshold.
Charging and discharging circuits for assisting charge pumps are disclosed. In certain embodiments, a radio frequency (RF) switch system includes an RF switch that receives an RF signal and is controlled by a switch control signal received at an input, a first charge pump configured to generate a first charge pump voltage, a level shifter powered by the first charge pump voltage and that generates the switch control signal based on a switch enable signal, and a charge pump assistance switch coupled to the input of the radio frequency switch and that activates to assist the first charge pump in response to a transition of the switch enable signal from a first state to a second state.
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
H03F 3/195 - High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
H03F 3/24 - Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
72.
OVER TEMPERATURE PROTECTION OF LDO CONTROLLING THE RF POWER AMPLIFIER COLLECTOR VOLTAGE
A power control circuit coupled to a power amplifier, said power control circuit comprising: a first circuit including a power supply and a first transistor to provide a first current to the power amplifier through the first transistor; a second circuit to provide a second current to the power amplifier, the power dissipation of the first current being dependent on the second current of the power amplifier; a protective circuit coupled to the second circuit, the protective circuit configured to pull down a voltage of the second circuit when the temperature of the power control circuit exceeds a threshold temperature, such that the second current provided to the power amplifier by the second circuit is reduced and the power dissipation in the first transistor of the first circuit is reduced with increasing temperature.
A dual sided molded package has a substrate with pads of varying size configured to receive electrically conductive interconnect members thereon. The pads include first pads that have a larger surface area than a surface area of second pads. In one implementation, one or more first pads are proximate the corners of the substrate. First interconnect members are attached to the first pads and second interconnect members are attached to the second pads. The first interconnect members have an exposed solderable area that is substantially equal to the surface area of the first pads, and the second interconnect members have an exposed solderable area that is substantially equal to the surface area of the second pads. The first exposed solderable area is larger than the second exposed solderable area.
Time of day (ToD) registers provide respective virtual ToDs corresponding to the occurrence of edges of input clock signals being supplied to an integrated circuit. The integrated circuit generates a heartbeat clock signal having a frequency higher than a SYNC signal and time stamps the heartbeat clock signal to generate heartbeat time stamps. The heartbeat time stamps are used along with the time stamps of the input clock signals to determine the time of day corresponding to occurrences of edges of the input clock signals.
A front-end system includes a first terminal that receives a radio frequency signal from a transceiver and a second terminal coupled to an antenna. A front-end module including a power amplifier amplifies the radio frequency signal when powered by a supply signal. The front-end module includes a reference signal generator that generates a reference signal and modulates the reference signal frequency based on the supply signal. The frequency-modulated reference signal is transmitted to the transceiver through the first terminal. The front-end module can also include a voltage sensor that senses a voltage level at the first terminal when the frequency-modulated reference signal is being transmitted to the transceiver to determine at least one control signal for controlling the front-end module.
Aspects and embodiments disclosed herein include a die comprising a first surface acoustic wave (SAW) resonator disposed on a surface of a substrate, a second SAW resonator disposed on the surface of the substrate, and an acoustic scattering structure disposed between the first SAW resonator and the second SAW resonator, the acoustic scattering structure including one or more trenches formed in the surface of the substrate.
According to the present disclosure, a passband filter is provided. The passband filter has a series branch, where the series branch comprises a set of one or more resonators having a resonant frequency sufficiently away from the passband of the filter such that spurious modes, of the set of one or more resonators, that are associated with the resonant frequency are outside of the passband of the filter; a set of one or more reactive components in series with the set of one or more resonators, the set of one or more reactive components having a resonant frequency sufficiently away from the passband of the filter such that the spurious modes of the set of one or more reactive components, that are associated with the resonant frequency are outside of the passband, and such that the resulting combined resonant frequency of the series combination of the set of one or more resonators and the set of one or more reactive components is within the passband of the filter.
Radio frequency systems and methods adjust power amplifier operation based on power amplifier operating mode or power level to achieve a tradeoff between improved linearity at lower power levels and improved out of band noise performance and coexistence at higher power levels.
Aspects of this disclosure relate to canceling a tone in a radio signal. A location of an interfering tone can be estimated in an orthogonal frequency division multiplexing symbol (OFDM). An interfering tone can be detected in a subsequent OFDM symbol based on the estimate of the location of the interfering tone in the OFDM using closed loop tone detection. The interfering tone in the subsequent ODFM can be canceled. Tone cancellation can be performed using digital signal processing circuitry. Tone cancellation can be performed in radio systems.
Embodiments of this disclosure relate to a system including a first signal path, a second signal path, a third signal path and a power control circuit. Signals in a first frequency band are transmitted and received via the first signal path. Signals in a second frequency band are received via the second signal path and transmitted via the third signal path. The power control circuit is configured to measure a first power level associated with the first frequency band and a second power level associated with the second frequency band at the first signal path. The power control circuit is further configured to adjust the power of a signal to be transmitted in the first frequency band and/or a signal to be transmitted in the second frequency band.
Methods and systems for fast sounding reference symbol (SRS) antenna port switching for FDD. A mobile device can include a baseband processor and a front end including a transmit power amplifier, a first transmit path, and a second transmit path. The front end can be configurable in a first mode to transmit via the first transmit path within a transmit band of a frequency division duplex band. The front end can be further configurable in a second mode to transmit via the second transmit path within a receive band of the frequency division duplex band.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
H04B 1/50 - Circuits using different frequencies for the two directions of communication
H04L 5/14 - Two-way operation using the same type of signal, i.e. duplex
82.
LOW LOSS TANGENT DIELECTRIC BASED ON SPINEL-STRUCTURED OXIDE
Disclosed herein are embodiments of high Q, temperature stable materials with low dielectric constants. In one aspect, a low loss dielectric material includes one or more transition metal oxides based on the (Zn, Ni, Co)O—Al2O3—TiO2 system comprising an aluminate comprising one of cobalt (Co) or nickel (Ni) crystallized in a spinel structure. The low loss dielectric material additionally comprises one or more of: a titanate comprising the one of Co or Ni crystallized in a spinel structure, an aluminum oxide crystallized in a corundum structure and a titanium oxide crystallized in a rutile structure.
H01B 3/00 - Insulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties
H01B 3/10 - Insulators or insulating bodies characterised by the insulating materialsSelection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
H01F 1/34 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
H01P 1/20 - Frequency-selective devices, e.g. filters
A surface acoustic wave device is disclosed. The surface acoustic wave device can include a piezoelectric layer. An interdigital transducer electrode can be in electrical communication with the piezoelectric layer. The interdigital transducer electrode can include a first bus bar. First fingers can extend from the first bus bar. The interdigital transducer electrode can include a second bus bar. Second fingers can extend from the second bus bar. The interdigital transducer electrode can have a first side and a second side separated by a centerline between the first bus bar and the second bus bar. A first mass of the first side of the interdigital transducer electrode can be different from a second mass of the second side of the interdigital transducer electrode. The first fingers can be asymmetric about the centerline in an active region of the surface acoustic wave device. A piston-mode structure can be asymmetric about the centerline between the first bus bar and the second bus bar.
An output driver can include a first driver circuit configured to operate with a first supply voltage and generate an output signal having an amplitude in a first range, and a second driver circuit configured to operate with a second supply voltage and generate an output signal having an amplitude in a second range. The output driver can further include a controller configured to operate any one of the first and second driver circuits, such that an output signal of the output driver has an amplitude in an overall range that includes the first and second ranges, and a switch circuit implemented to isolate one driver circuit from another driver circuit when the driver circuit is inactive and the other driver circuit is active.
Apparatus and methods for power amplifier systems with balun and shunt capacitor are disclosed. In certain embodiments, a front-end system includes a shunt capacitor, a balun having an input side and an output side, and power amplifier stages that operate in parallel with one another to amplify a radio frequency input signal. The power amplifier stages include a first power amplifier stage having a first output coupled to the shunt capacitor and to a first input terminal on the input side of the balun, and a second power amplifier stage having a second output coupled to a second input terminal on the input side of the balun.
An electronic package is provided. The electronic package comprises an electronic component, a substrate, at least one ground plane enclosed in or supported by the substrate, at least one electronic component mounted to the substrate, the at least one electronic component including at least one non-groundable thermal output, at least one thermally conductive pathway extending within the substrate between an interface exposed on the substrate and the at least one ground plane, the at least one thermally conductive pathway configured to electrically isolate the interface from the at least one ground plane, and at least one thermally conductive member coupling the at least one non-groundable thermal output to the interface, a first end of the at least one thermally conductive member being soldered to the at least one electronic component and a second end of the at least one thermally conductive member being in non-bonded surface contact with the interface.
Systems and methods for reducing loss and distortion for beamforming are provided. In one aspect, a radio transmitter includes an antenna array including a plurality of antennas and a transmit port configured to receive a radio frequency transmit signal. The radio transmitter further includes a plurality of delay circuits, each of the delay circuits configured to receive the radio frequency transmit signal from the transmit port and delay the radio frequency transmit signal. Each of the delay circuits is configured to provide the delayed radio transmit signal to a corresponding one of the antennas and each of the delay circuits includes a plurality of delay components electrically connected in series and a plurality of switches. Each of the switches is electrically connected in parallel with a corresponding one of the delay components.
Aspects of this disclosure relate to multi-stage balanced-to-unbalanced transformers with enhanced input impedance symmetry between positive and negative input terminals resulting in improved common mode rejection and stable supply voltage provided to a source of the differential signal fed to the positive and negative input terminals. A multi-stage balanced-to-unbalanced transformer includes a balance-to-balance transformer connected in series with a balanced-to-unbalanced transformer.
Apparatus and methods for radio frequency (RF) signal splitting are disclosed. In certain embodiments, a front-end system includes a filter that filters an RF receive signal to generate a differential filtered RF signal between a first output and a second output, a first low noise amplifier (LNA) that generates a first amplified RF signal by amplifying a first component of the differential filtered RF signal received from the first output, a second LNA that generates a second amplified RF signal by amplifying a second component of the differential filtered RF signal received from the second output, a first multi-throw switch that receives the first amplified RF signal, and a second multi-throw switch that receives the second amplified RF signal.
A method of forming a packaged semiconductor module comprises mounting an electronic device on a surface of a substrate having a ground plane, forming a bond pad on the surface of the substrate and electrically connected to the ground plane, depositing a mold compound on the electronic device, ablating a via opening in the mold compound on a side of the electronic device, forming a conductive post within the via opening and in electrical contact with the bond pad, and depositing a conductive layer on the mold compound and in physical contact with the conductive post and with the ground plane, the conductive post, the conductive layer, and the ground plane together forming the integrated electromagnetic interference shield, the conductive post extending from the bond pad to the conductive layer in a direction perpendicular to a plane defined by the surface of the substrate.
EnzyFloss is an innovative interdental cleaning device that integrates diagnostic and oral health functionality into a standard dental flosser. The floss string is coated with a unique combination of enzymes: amylase, protease, and lipase, long with a pH-sensitive dye and candelilla wax, enabling the detection of early oral health issues such as plaque accumulation, bacterial activity, or imbalanced oral pH. The biodegradable handle is ergonomically designed and inscribed with inspirational scripture for user encouragement. This multifunctional design advances the art by transforming flossing into a proactive oral health screening tool, unlike traditional flossers which only provide mechanical cleaning.
An impedance matching apparatus for providing impedance matching for an RF component. The apparatus includes a balun transformer circuit having a primary coil at an input side of the balun transformer circuit. The primary coil can be connected to a signal source to receive an input signal from the signal source. The balun transformer circuit further includes a secondary coil at an output side of the balun transformer circuit, the secondary coil being coupled to the primary coil to supply an output signal to the RF component and having a parasitic leakage inductance configured to match the output impedance of the signal source to the input impedance of the RF component
A multi band filter package is disclosed. The multi band filter can include a first acoustic wave filter that is mounted on a carrier, a second acoustic wave filter mounted on the carrier, and a ground pad on the carrier. The first acoustic wave filter has a first filter component and a first shunt resonator. The second acoustic wave filter has a second filter component and a second shunt resonator. The first and second acoustic wave filters are arranged such that the first and second shunt resonators are positioned between the first and second filter component. The first and second shunt resonators are coupled to the ground pad by way of an electrically conductive path. At least a portion of the electrically conductive path is positioned between the first and second shunt resonators.
An envelope tracking system has an envelope tracker that is configured to generate a power amplifier supply voltage that changes is relation to an envelope of a radio frequency signal, and a power amplifier comprises at least a first amplification stage having an input terminal receiving a radio frequency (RF) signal to be amplified. The power amplifier has a first coupling unit, and a second coupling unit inductively coupled with the first coupling unit, the second coupling unit provides radio frequency-coupled feedback to the input terminal of the first amplification stage through a radio frequency-coupled feedback path.
A surface acoustic wave filter is disclosed. The surface acoustic wave filter includes a substrate, and first and second surface acoustic wave filter structures disposed on first and second main surfaces of the substrate, respectively. The first surface acoustic wave filter structure includes a first piezoelectric layer a plurality of first surface acoustic wave resonators formed on a top surface of the first piezoelectric layer, and a first wiring layer connecting the first surface acoustic wave resonators to each other. The second surface acoustic wave filter structure includes a second piezoelectric layer, a plurality of second surface acoustic wave resonators formed on a bottom surface of the second piezoelectric layer, and a second wiring layer connecting the second surface acoustic wave resonators to each other. A plurality of through electrodes extends through the substrate, the first piezoelectric layer, and the second piezoelectric layer. A circuit including the first surface acoustic wave resonators and the first wiring layer on the top surface of the first piezoelectric layer forms at least one first radio frequency filter, and a circuit including the plurality of second surface acoustic wave resonators and the second wiring layer on the bottom surface of the second piezoelectric layer forms at least one second radio frequency filter. The at least one first radio frequency filter and the at least one second radio frequency filter belong to different frequency bands.
H03H 9/25 - Constructional features of resonators using surface acoustic waves
H03H 3/02 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Aspects of this disclosure relate to a bulk acoustic wave that includes a piezoelectric having a lower magnitude effective piezoelectric coefficient in the engineered region than in a main acoustically active region. The bulk acoustic wave device includes a seed layer positioned between an electrode and the piezoelectric layer in the engineered region. A resonance associated with the engineered region can be at a lower frequency than a resonant frequency of the main acoustically active region. Related bulk acoustic wave dies, filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.
An acoustic wave system includes a multi-layer piezoelectric substrate including a support substrate, a piezoelectric layer, and an intermediate structure between the support substrate and the piezoelectric layer. The intermediate structure can include a first dielectric material in a first region, and the first dielectric material and a second dielectric material can be included in a second region. A first resonator is in the first region, and a second resonator is in the second region.
According to the present disclosure there is provided a control circuit for a packaged semiconductor chip rail guide tapper driving means, comprising a control signal generator configured to generate control signals at a control frequency, and a drive module arranged to receive the control signals and output drive signals to the driving means based on the control signals to drive a rail guide tapper to tap a rail guide at a tapping frequency corresponding to the control frequency.
Diplexers and multiplexers for carrier aggregation are disclosed. In one aspect, a front end for receiving carrier aggregation radio frequency signals includes an antenna switch module configured to receive a first radio frequency signal in a first band and a second radio frequency signal in a second band from an antenna, and a diplexer including a first filter configured to pass the first band, a second filter configured to pass the second band, and a diplexed node between the first and second filters and coupled to the antenna switch module. The front end can further include a main amplifier coupled to the diplexed node of the diplexer and configured to amplify radio frequency signals received from the diplexer, and a transconductance stage coupled to the main amplifier and configured to independently control the gain of the main amplifier for the first band and the second band.
H04B 1/00 - Details of transmission systems, not covered by a single one of groups Details of transmission systems not characterised by the medium used for transmission
100.
CIRCUITS, DEVICES AND METHODS RELATED TO POWER AMPLIFIERS
In some embodiments, stability in power amplifiers can be achieved under high voltage standing wave ratio conditions, with an amplifier circuit that includes an amplifier having a selected stage among a plurality of stages, and either or both of a first stabilizing circuit implemented on an input side of the selected stage to provide stability in operation of the amplifier under a high in-band voltage standing wave ratio condition, and a second stabilizing circuit implemented on an output side of the selected stage to provide stability in operation of the amplifier under a high out-of-band voltage standing wave ratio condition.
