A heteroepitaxial wafer includes, in the following order: (1) a substrate made of silicon having a thickness, a diameter, and a resistivity, and including a buried gettering layer for hydrogen; (2) a 3C-SiC layer, and (3) an aluminum-nitride nucleation layer, which includes, in the given order: a first nitrogen enriched aluminum-nitride region, an aluminum-nitride region, and a second nitrogen enriched aluminum-nitride region.
The invention relates to a method for determining the rounding of a wafer made of semiconductor material, comprising the following steps in this order: (i) measuring the height profile of a wafer made of semiconductor material in the radial direction in its boundary region and in a region adjacent to the boundary region in the radially inward direction, wherein the boundary region is defined as an annular region at the outer boundary of the wafer in which the thickness of the wafer continuously reduces in the radially outward direction; (ii) specifying a radial portion which comprises a part of the boundary region and at least a part of the region of the wafer made of semiconductor material adjacent to the boundary region in the radially inward direction; (iii) determining an angle (φ) and optionally an angle (θ) for determined measuring points (P1) of the height profile in the radial portion, wherein the angle (φ) is formed from the respective determined measuring point (P1) as the vertex, and two further measuring points P2 and P3 of the height profile which are arranged at a determined radial distance (a) from the vertex in the radially inward direction and in the radially outward direction, and wherein the angle (θ) is obtained from the difference 180°-φ; and (iv) identifying the smallest angle (φ) or optionally the largest angle (θ) in the radial portion as a characteristic number for the rounding.
Electrically conducting bulk β-Ga2O3 single crystals can be produced by the Czochralski (CZ) method to have a pre-defined cylindrical diameter and a pre-defined cylindrical length. The method uses a growth furnace having a noble metal crucible with a Ga2O3 starting material. An inner thermal insulation is provided in the growth furnace with a radiative reflectivity lower than 0.4 in a near infrared spectral region of 1-3 μm to decrease reflections of heat back to the growing single crystal, and thus, to increase the heat dissipation from the growing single crystal. Also, in the CZ method, when puling a single crystal from seeding to separation, a dynamic decrease of the growth rate is achieved from the initial growth rate of 1-10 mm/h, to a final growth rate of 0.2-1 mm/h, to dynamically decrease the latent heat of crystallization as the growth proceeds.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
C30B 15/10 - Crucibles or containers for supporting the melt
C30B 15/16 - Heating of the melt or the crystallised materials by irradiation or electric discharge
A semiconductor wafer of monocrystalline silicon is produced, in the following order: growing a single crystal of silicon by the CZ method; dividing off a wafer consisting completely of an N region, in which there are no agglomerates of silicon interstitials or vacancies having a diameter of more than 20 nm, and has an oxygen concentration of not less than 5.3×1017 atoms/cm3 and not more than 5.9×1017 atoms/cm3 and a nitrogen concentration of not more than 1.0×1012 atoms/cm3; executing a three separate rapid thermal annealing (RTA) treatments of the wafer at temperatures within different temperature ranges over different time periods in a different atmospheres of argon with and without ammonia.
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
5.
SEMICONDUCTOR WAFER HAVING A MULTILAYERED STRUCTURE AND METHOD FOR PRODUCING THE SAME
z1-zx1-xy1-yx1-xy1-y1-yN; and one or more monocrystalline, doped GaN layers having a total thickness of not less than 6 µm, wherein at least one of the one or more monocrystalline, doped GaN layers has a threading dislocation density of not more than 5.0×108cm-2, and wherein 0.3≤z≤0.7; 0.7≤x≤1.0; and 0≤y≤0.5.
A method deposits a strain relaxed graded buffer layer of silicon germanium on a surface of a substrate. The surface includes silicon, and the buffer layer has an increasing content of germanium up to a final content. The method includes: conducting GeCl4 and SiH2Cl2 during a first stage and a second stage over the surface of the substrate at a deposition temperature of not less than 800° C.; growing the buffer layer with a grade rate that is less than 10% Ge/μm; and growing the buffer layer with a growth rate that is not less than 0.1 μm/min during the first stage, and that is less than 0.1 μm/min during the second stage.
A single crystal of silicon may be pulsed by a method that includes installing a seed holder on a drawing shaft in a Czochralski crystal pulling apparatus. Here, a dish, in a form of a hollow truncated cone, is secured between the seed holder and the drawing shaft such that an opening of the dish faces the drawing shaft. The dish has a top radius, a height, a material thickness, a base plate having a base plate radius, and a bore having a diameter. The method further includes: mounting a crystal seed into the seed holder; melting polycrystalline silicon in a crucible to create a melt; lowering the drawing shaft until the crystal seed is in contact with the melt; and pulling the single crystal. The drawing shaft and the dish are wetted with oil, prior to pulling the single crystal.
A method for pulling a single-crystal ingot from a silicon melt according to the Czochralski technique, comprising the following steps: (i) providing a silicon melt and a seed crystal of monocrystalline silicon above the silicon melt, the silicon melt and/or the seed crystal optionally comprising dopants; (ii) lowering the seed crystal until contact has been made between the seed crystal and the silicon melt; and (iii) pulling a seed cone, a thin neck, a head cone and a cylindrical section of the single-crystal ingot, in this order, by raising the seed crystal; characterized in that the seed cone has an upper diameter of not less than 12 mm and not greater than 22 mm, a lower diameter of not less than 2 mm and not greater than 10 mm, and an axial length of not less than 75 mm and not greater than 300 mm.
An apparatus automatically packages wafer cassettes in a shipping box. The apparatus includes: a loading station configured to take the shipping box for semiconductor wafers; a radio-frequency identification (RFID) reader/writer configured to read and write to an RFID tag affixed to the shipping box; a camera configured to optically examine attachments to the shipping box; an element configured for equipping the shipping box with a desiccant pouch; an element configured for sealing a bag that surrounds the shipping box with a weld seam; an element configured for checking the impermeability of a weld seam; an element configured for applying labels to the shipping box; a robot arm configured to automatically transport the shipping box; an element configured for storing packaging material; and an element configured to take the shipping box for semiconductor wafers and to store the shipping box for transportation.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
10.
METHOD FOR THE CRYSTAL PULLING OF A DOPED MONOCRYSTALLINE CRYSTAL FROM SILICON
cnTnmaxmaxCSCSf CSCS CSCSmaxmax) is ascertained by adapting the predefined dopant concentration (C) until the amount of (formula (I)) is equal to zero.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
The invention relates to a method for producing semiconductor wafers from monocrystalline silicon, comprising drawing a cylindrical portion and subsequently an end cone of a monocrystal of silicon from a melt which is contained in a crucible; wherein the drawing speed during drawing of the end cone remains substantially constant with respect to the drawing speed during drawing of the cylindrical portion end region; rotating the crucible at a rotational speed and in a rotational direction during drawing of the cylindrical portion and the end cone of the monocrystal; and separating the semiconductor wafers of monocrystalline silicon from the cylindrical portion of the monocrystal, characterised in that the drawing speed, during drawing of the end cone, is at least greater than 0.46 mm/min, the rotational direction of the crucible is continuously changed and an amplitude of the rotational speed before and after the change in rotational direction is not less than 6 rpm.
C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
12.
RETAINING DEVICE FOR A HORIZONTALLY ARRANGED DISC OF SEMICONDUCTOR MATERIAL
The invention relates to a retaining device for a horizontally arranged disc (30) of semiconductor material, comprising at least one main element (10) and a plurality of support elements (20) for supporting the disc (30) of semiconductor material, wherein the at least one main element (10) consists of a metal alloy and the plurality of support elements (20) consist of a plastic composition, the plurality of support elements (20) are arranged concentrically, the plurality of support elements (20) are releasably fastened on the at least one main element (10) in a form-fitting manner azimuthally and in a form-fitting manner in the radially outward direction, the plurality of support elements (20) have, on the radially inner side, projections (21) for supporting the edge of the disc (30) of semiconductor material, and the surface on the upper side of the projections (21) drops downwards in the radially inward direction.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
13.
PROCESS FOR PRODUCING A SINGLE CRYSTAL FROM SILICON
A process produces a single crystal of silicon. The process includes: installing a feed rod in a float-zone apparatus, having a diameter between 230-270 mm; installing a first hollow cylinder having an internal diameter larger, by 30-50 mm, than the feed rod's diameter; installing a second hollow cylinder having an internal diameter larger, by not 20-60 mm, than a crystal target diameter that is 290-310 mm; and pulling the single crystal of silicon. A pulling speed is 1.3-1.5 mm/min. A vertical distance of the bottom edge of the first hollow cylinder from the outer melting edge is smaller than 2 mm. The top edge of the second cylinder protrudes 1-10 mm over the crystallizing edge. A length of the single crystal is removed to form an ingot piece having a length 15-50 cm.
C30B 15/24 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using mechanical means, e.g. shaping guides
A semiconductor wafer is processed by grinding the semiconductor wafer so as to remove material using a grinding tool while delivering a coolant into a contact region between the rotating semiconductor wafer and the grinding tool. The grinding tool has grinding teeth having a height. While grinding, first and second coolant flow rates are respectively applied onto first and second regions on one side of the semiconductor wafer by one or more nozzles. The first region is bounded by a lower right quadrant of the semiconductor wafer and the second region is bounded by a lower left quadrant. A ratio of the first coolant flow rate and a sum of the first coolant flow rate and the second coolant flow rate is no more than 35% and no less than 25%.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
B24B 37/08 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
B24B 55/02 - Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
15.
METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON
A method of producing an epitaxially coated semiconductor wafer of monocrystalline silicon, comprising: providing a melt of silicon in a crucible; pulling a single crystal of silicon from a surface of the melt with a pulling speed v by the CZ method, wherein oxygen and boron are incorporated into the single crystal and the concentration of oxygen in the single crystal is not less than 6.4×1017 atoms/cm3 and not more than 8.0×1017 atoms/cm3, and the resistivity of the single crystal is not less than 10 mΩcm and not more than 25 mΩcm, and wherein the melt is not dopes with nitrogen and/or carbon; applying a CUSP magnetic field to the melt during the pulling of the single crystal of silicon, surrounded by a heat shield; controlling the pulling speed v and an axial temperature gradient G at the phase boundary between the single crystal and the melt, in such a way that the quotient v/G is not less than 0.13 mm2/° C. min and not more than 0.20 mm2/° C. min; heating the single crystal by means of an annular heater which is disposed above the melt and surrounds the single crystal; producing a substrate wafer of monocrystalline silicon with a polished lateral surface by processing the single crystal of silicon; and depositing an epitaxial layer of silicon on the polished lateral face of the substrate wafer, wherein the depositing of the epitaxial layer is the first heat treatment in the course of which the substrate wafer is heated to a temperature of not less than 700° C.
C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
01 - Chemical and biological materials for industrial, scientific and agricultural use
09 - Scientific and electric apparatus and instruments
Goods & Services
Doped and undoped monocrystalline silicon in the form of wafers for use in the manufacture of semiconductors; doped and undoped monocrystalline silicon wafers in sawed, lapped, polished, etched and coated form for use in the manufacture of semiconductors; monocrystalline silicon wafers for use in the manufacture of semiconductors Silicon wafers; hyperpure silicon sold in the form of wafers for use in the electrical and electronic industries
17.
METHOD FOR PRODUCING A GALLIUM OXIDE LAYER ON A SUBSTRATE
A β-Ga2O3 layer is grown on a substrate by: performing a first deposition cycle at a first growth rate using oxygen and a precursor including Ga, the first deposition cycle having a thickness of at least 3 atomic layers of β-Ga2O3 and at most 20 atomic layers of β-Ga2O3; determining a regression curve for a layer surface reflectivity using tuples of a measured first layer surface reflectivity and having a first layer thickness; and performing a second deposition cycle including measuring a second layer thickness and a second layer surface reflectivity, with a predetermined second growth rate determined from the first growth rate multiplied by a correction factor, having a defined lower and upper limit.
Method for pulling a single crystal ingot of semiconductor material from a melt in accordance with the Czochralski technique, comprising the following steps: (i) providing a melt and a cylindrical seed crystal of semiconductor material over the melt, the cylinder axis of the seed crystal being aligned along the pulling direction; (ii) lowering the seed crystal at a rate of not more than 30 mm/min into a first position, until contact is produced between the circular underside of the seed crystal and the surface of the melt; (iii) holding the seed crystal in the first position for not less than 20 seconds; (iv) submerging a part of the seed crystal into the melt by lowering the seed crystal from the first position into a second position, in which the axial length of the part of the seed crystal submerged into the melt at least matches the diameter of the seed crystal, the submersion taking place at a rate of not less than 3 mm/min and not more than 30 mm/min; (v) holding the seed crystal in the second position until the submerged part of the seed crystal is molten; and (vi) pulling a single crystal ingot from the melt by raising the seed crystal; wherein the temperature of the melt in each of steps (iii) to (v) independently of one another is not less than 2°C and not more than 10°C above the temperature of the melt at the start of step (vi).
The invention relates to a method and a device for pulling a monocrystalline silicon rod in a pulling system for zone melting, the method comprising the following steps: (I) providing a stock rod made of silicon, which comprises an azimuthal groove at one end; (2) attaching a lower part, which comprises three gripping arms, each gripping arm being shaped such that one end fits into the azimuthal groove of the stock rod and another end is rotatably attached to the lower part; (3) suspending the lower part, together with the stock rod, on an upper part, which contains a connecting element connected to a pulling shaft of the zone-melting pulling system, such that the upper part and the lower part are radially interlockingly connected to each other, the upper part comprising an element for radial orientation, and three length-adjustable spacing elements being attached to the upper part such that the spacing elements can apply force to respective gripping arms; (4) moving the element for radial orientation such that the axis of rotation of the stock rod at the end at which the groove is located corresponds to the axis of rotation of the pulling shaft; (5) setting the length-adjustable spacing elements such that the axis of rotation of the stock rod at the end remote from the groove corresponds to the axis of rotation of the pulling shaft; (6) pulling a conical part of a monocrystalline rod; (7) pulling a cylindrical part of the monocrystalline rod.
The invention relates to a method for polishing both sides of at least one wafer made of a semiconductor material, comprising the following steps: Placing the at least one wafer made of semiconductor material in at least one carrier disc between an upper and a lower polishing disc of a double-sided polishing machine, wherein the underside of the upper polishing disc and the upper side of the lower polishing disc are each covered with a polishing cloth; causing the at least one carrier disc, the upper polishing disc and the lower polishing disc to rotate; circulating a polishing agent between a collecting container and the at least one wafer made of a semiconductor material arranged between the upper and lower polishing discs of the double-sided polishing machine; measuring the pH value of the polishing agent; and controlling the pH value of the polishing agent; characterised in that a target value for the pH value is no lower than 11.4 and no greater than 12.4, and the pH value is controlled by temporarily adding a basic composition to the polishing agent depending on the measured pH value such that the deviation of the measured pH value from the target value of the pH value during the circulation of the polishing agent between the collecting container and the at least one wafer made of a semiconductor material arranged between the upper and lower polishing discs of the double-sided polishing machine is never greater than ±0.2.
B24B 37/08 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
B24B 57/02 - Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
B24B 37/005 - Control means for lapping machines or devices
The invention relates to a method for cleaning a front side and a rear side of a semiconductor wafer, comprising in the following order: cleaning of the front side of the semiconductor wafer, including, in the following order: (1) a pre-cleaning step with water, so that the front side is still wet when the next cleaning step begins, (2) a first cleaning step for cleaning with ozonated water and a subsequent rinsing step with purified water, (3) a second cleaning step, which includes a treatment step with ozonated water, which is followed by a treatment step with a liquid containing HF, (4) a third cleaning step for cleaning with ozonated water and a subsequent rinsing step with purified water, the joint cleaning of the front side and the rear side of the semiconductor wafer including: a fourth cleaning step, which includes a treatment step with ozonated water, which is followed by a treatment step with a liquid containing HF, and a drying step, in which both sides of the semiconductor wafer are dried.
Semiconductor wafers having a subsurface-referenced nanotopography of the upper side surface of less than 6 nm, expressed as a maximum peak-to-valley distance on a subsurface and referenced to subsurfaces with an area content of 25 mm×25 mm, are produced from a workpiece by feeding the workpiece through a wire web tensioned between wire guide rollers and divided into wire groups, the wires producing kerfs as the wires engage the workpiece. For each of the wire groups, a placement error of the kerfs of the wire groups is used to compensate movements of the wires of the wire group as a function of the placement error, in a direction perpendicular to the running direction of the wires during feeding of the workpiece through the arrangement of wires, by activating at least one drive element.
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
23.
METHOD FOR PRODUCING DISCS FROM A CYLINDRICAL ROD MADE OF A SEMICONDUCTOR MATERIAL
A method produces wafers from a cylindrical ingot of semiconductor material having an axis and an indexing notch in an outer surface of the cylindrical ingot and parallel to the axis. The method includes, in the order specified: (a) simultaneous removal of a multiplicity of sliced wafers from the cylindrical ingot by multi-wire slicing in the presence of a cutting agent; (b) etching of the sliced wafers with an alkaline etchant in an etching bath at a temperature of 20° C. to 50° C. and for a residence time, such that the material removed from each of the sliced wafers is less than 5/1000 of an initial wafer thickness; and (c) grinding of the etched wafers by simultaneous double-disk grinding using an annular abrasive covering.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24D 7/06 - Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front faceBushings or mountings therefor with inserted abrasive blocks, e.g. segmental
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
24.
METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER MADE OF SEMICONDUCTOR MATERIAL IN A DEPOSITION DEVICE
A method deposits an epitaxial layer on a semiconductor substrate. The method includes: placing the substrate on a susceptor, which is surrounded, separated by a gap, from a preheat ring and is held by a supporting shaft; determining an excentricity between an axis perpendicularly through the center of the preheat ring and through the center of the susceptor; passing deposition gas over the substrate wafer along a flow direction pointing from a gas inlet to outlet; passing purge gas along a lower side of the preheat ring and of the susceptor; and rotating the supporting shaft about an axis of rotation with a frequency, by displacing the supporting shaft from a starting position to an end position and back to the starting position with the frequency of the rotating of the supporting shaft, the displacement path from the starting position to the end position being dependent on the excentricity.
A process produces semiconductor wafers with an epitaxial layer deposited from a gas phase. The process includes: removing material deposited in a deposition chamber from preceding coating operations by etching the deposition chamber; carrying out coating operations in succession, which each entail depositing an epitaxial layer on a substrate wafer in the deposition chamber, including passing a first gas stream of first deposition gas over the substrate wafer to form a semiconductor wafer with the epitaxial layer; and before/after each coating operation, passing a second gas stream of a second deposition gas to an edge region of the substrate/semiconductor wafer. A change is made to a process parameter whose effect is that, through the passing of the second deposition gas, deposition of material in the edge region increases as a function of a number of coating operations carried out since the removal of material from the deposition chamber.
The invention relates to a method for testing the resistance of semiconductor wafers made of monocrystalline silicon against thermally induced dislocations, comprising: subjecting a semiconductor wafer to a heat treatment adapted to properties of the semiconductor material in a vertical furnace, wherein the semiconductor wafer has a diameter and rests on contact points of a number of fingers of a boat and a distance of the contact points to a boundary of the semiconductor wafer has a length which is no less than 5% and no more than 40% of the diameter of the semiconductor wafer; carrying out a BFA analysis of one or more partial surfaces of the semiconductor wafer around the contact points by means of an SIRD system, wherein the shortest distance of the one or more partial surfaces to the boundary of the semiconductor wafer is no less than 1 mm and no more than 33% of the diameter of the semiconductor wafer.
A method for sorting and aligning semiconductor discs, comprising the following steps: detecting a first holder for a plurality of semiconductor discs and their load state; removing a semiconductor disc from the first holder; aligning the semiconductor disc according to a specified orientation; detecting and reading a laser marking on the semiconductor disc; storing the information contained in the laser marking in a database or a storage medium; and sorting the oriented semiconductor disc into a second holder for a plurality of semiconductor discs, wherein these method steps are carried out automatically. A device for sorting and aligning semiconductor discs, having a chamber and a control unit (10), wherein the chamber comprises the following units: a first attachment (8) for a first holder (9) for a plurality of semiconductor discs; a second attachment (8) for a second holder (9) for a plurality of semiconductor discs; a robot arm (4) having an end effector (6) comprising a support element for receiving and transporting a semiconductor disc and an optoelectronic sensor; a depositing station (7) for a semiconductor disc, which is designed in such a way that the semiconductor disc can be deposited and removed by means of the end effector (6); a device (11) for aligning the semiconductor disc by rotation; and a reader (12) for identifying a laser marking on the edge of the semiconductor disc; wherein the control unit (10) is designed for automated control of the robot arm, and the optoelectronic sensor and the reader (12) are coupled to a database or a storage medium.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
28.
METHOD FOR SEPARATING MULTIPLE SLICES FROM A WORKPIECE BY MEANS OF A WIRE SAW DURING A SEPARATION PROCESS
The invention relates to a method for separating multiple slices from a workpiece (2) by means of a wire saw during a separation process, wherein the wire saw comprises a wire grid, made up of moving wire sections of a saw wire, and a control mechanism, and the wire grid is clamped in a plane between two wire guide rollers, wherein each of the two wire guide rollers is mounted between a fixed bearing and a floating bearing, wherein the method comprises the feeding of the workpiece (2) through the wire grid by means of the control mechanism in a feed direction perpendicular to a workpiece axis and perpendicular to the plane of the wire grid; the supplying of a cutting means to the wire grid; the supplying of a temperature-control medium to the workpiece; the conducting of a temperature-control liquid in accordance with a temperature profile through the fixed bearing and/or the displacement of the workpiece along the workpiece axis in accordance with a displacement profile, wherein the temperature profile and the displacement profile are in opposition to a form deviation; characterised by the identification of warp curves of at least one slice from the workpiece start (3) and of at least one slice from the workpiece end (4) of at least one preceding separating process using the wire saw; the formation of the difference between the warp curves; the setting of the temperature and/or the volume speed of the cutting means during the separating process depending on the difference between the warp curves; and the setting of the temperature and/or the volume speed of the temperature-control medium depending on the difference between the warp curves.
B23D 57/00 - Sawing machines or sawing devices not covered by one of groups
B23D 59/00 - Accessories specially designed for sawing machines or sawing devices
B23D 59/04 - Devices for lubricating or cooling straight or strap saw blades
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
29.
PROCESS FOR MANUFACTURING SEMICONDUCTOR WAFERS CONTAINING A GAS-PHASE EPITAXIAL LAYER IN A DEPOSITION CHAMBER
A process produces semiconductor wafers with epitaxial layer deposited from a gas phase in a deposition chamber. The process includes placing a substrate wafer on a susceptor with circular perimeter by a robot that moves the substrate wafer into a placement position and places it on the susceptor with a corrective precept causing a center of the substrate wafer not to lie above a center of the susceptor; and depositing the epitaxial layer on the substrate wafer. A first number of substrate wafers having a specific resistance which falls within a first range are moved into the placement position with a first corrective precept, and a second number of substrate wafers having a specific resistance which falls within a second range are moved by the robot with a second corrective precept, differs from the first corrective precept.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
A transport container transports semiconductor wafers. The transport container includes: a mandated 3D printed shape, including a device in a base that is suitable for removing liquid media; and at a surface of the transport container, a coating material configured for protection from chemicals capable of etching the wafers. The coating material is applied by of a low-temperature coating process. The coating material consists of polytetrafluoroethylene, perfluoroalkoxy polymer, or polyvinylidene fluoride. The mandated form of the transport container also includes an integrated workpiece holder for the wafers or carriers for the wafers, configured such that that the wafers to be transported are loadable in standing form. The transport container is configured for a designated transport direction of the transport container in an automatic transport system that runs parallel to a front or rear side of the semiconductor wafers.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
31.
APPARATUS AND METHOD FOR PRODUCING A DOPED MONOCRYSTALLINE ROD MADE OF SILICON
An apparatus produces a doped Czochralski crystal. The apparatus includes: a pressure vessel; a crucible in the pressure vessel for containing liquid silicon; and a second apparatus for doping the melt. The second apparatus includes: a housing; a reservoir vessel holding a dopant; a conveyor belt conveying the dopant; a third apparatus for shaping a dumped bed on the conveyor belt; and a pipe whose first end is accessible by the dopant from the conveyor belt and whose second end points in a direction of the liquid silicon and is closed off from the liquid silicon. The third apparatus has a half-pipe having a diameter smaller than a width of the conveyor belt, which is closed on one side, the other side being open, and is arranged over the conveyor belt such that the open side points in the direction of conveyance of the dopant.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
A method produces semiconductor wafers in a chamber of a deposition reactor of a plant. The method includes: repeatedly depositing an epitaxial layer on a substrate wafer in the chamber, producing semiconductor wafers, and at the same time: conditioning a replacement chamber outside the plant by purging the replacement chamber with a purge gas; interrupting the deposition of the epitaxial layer; replacing the chamber with the replacement chamber, after the conditioning, the replacement chamber being sealed and transported in a closed state to the plant or after the conditioning, the replacement chamber is transported to the plant and in this process purge gas is passed through the replacement chamber; and continuing the deposition of the epitaxial layer in the replacement chamber, producing a second number of semiconductor wafers.
C30B 25/08 - Reaction chambersSelection of materials therefor
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
The invention relates to a susceptor for a device for depositing a layer of semiconductor material onto a substrate wafer by means of deposition from the gas phase, the susceptor comprising a susceptor plate and a carrier ring for a substrate wafer, and the carrier ring being disposed on the susceptor plate, characterized in that there is a mechanical connection between the carrier ring and the susceptor plate, which mechanical connection can be reversibly established and released.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
34.
METHOD FOR PRODUCING A SINGLE CRYSTAL OF SILICON WHICH IS DOPED WITH N-TYPE DOPANT ACCORDING TO THE CZ METHOD
The invention relates to a method for producing a single crystal of silicon, which is doped with n-type dopant, by pulling the single crystal, which is surrounded by a heat shield having a lower end, in a reactor chamber according to the CZ method, from a melt which is contained in a crucible, the method comprising: heating solid dopant in a dopant crucible of a sublimation unit outside the reactor chamber by means of a crucible heater up to a temperature at which the gaseous dopant is formed; supplying the gaseous dopant in the form of a volumetric flow of dopant gas through a pipeline having a lower end to a surface of the melt, characterised by bringing a control valve, which is between the sublimation unit and the reactor chamber, into a specified open state as soon as a pressure difference between the pressure in the sublimation unit and the pressure in the reactor chamber has increased to a predetermined value; and controlling the open state of the control valve using a target pressure in the sublimation unit as a guide variable and the pressure difference as a control variable of the controlling.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
Disclosed is a process for manufacturing semiconductor wafers containing a gas-phase epitaxial layer in a deposition chamber, involving removing, from the deposition chamber by etching the deposition chamber, material settled in the deposition chamber during preceding coating processes; performing successive coating operations in the etched deposition chamber, each of said coating operations involving having a robot place a substrate wafer on a susceptor having a circular circumference, the robot moving the substrate wafer into a drop-off position and placing it on the susceptor, the center of the substrate wafer not lying over the center of the susceptor in the drop-off position because of a predefined corrective parameter; and depositing an epitaxial layer on the substrate wafer such that a semiconductor wafer containing an epitaxial layer is produced, characterized in that for each first substrate wafer moved by the robot into the drop-off position, the value of the predefined corrective parameter corresponds to a mean value of differences in the positions of a number of previously coated substrate wafers which had been the first substrate wavers to be coated following a preceding chamber etching operation.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
36.
PROCESS FOR MANUFACTURING A SILICON SINGLE CRYSTAL, AND SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON
The invention relates to a semiconductor wafer made of single-crystal silicon and to a process for producing a silicon single crystal by pulling the single crystal from a melt which is contained in a crucible and contains phosphorus and boron as dopants in a ratio of no more than 0.41, wherein the melt contains boron in a concentration of no less than 5.0 x 1014atoms/cm3and no more than 2.2 x 1015atoms/cm3, and the single crystal comprises a cylindrical portion having a diameter of at least 300 mm and a length, and is surrounded by a heat shield when being pulled from the melt; and wherein a lower edge of the heat shield has a spacing of no less than 18 mm from a surface of the melt; the method comprising: rotation of the single crystal at a rate of no less than 8 rpm and no more than 13 rpm; and the application of a horizontal magnetic field to the melt, the magnetic flux density of which is no less than 2000 Gs and no more than 3000 Gs.
C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
37.
METHOD FOR TESTING THE STRESS ROBUSTNESS OF A SEMICONDUCTOR SUBSTRATE
A method tests the stress robustness of a semiconductor substrate. The method includes: forming a nitride layer on a surface of the semiconductor substrate, the nitride layer being directly deposited on the surface of the semiconductor substrate or on a native oxide layer that is interposed on the surface; cooling the semiconductor substrate and the nitride layer; patterning the nitride layer into a patterned nitride by photolithography including a step of reactive ion etching with ions produced from a gas, which includes hydrogen or a hydrogen compound or both; processing the patterned nitride and the semiconductor substrate at a temperature of not less than 800° C. and not more than 1300° C. in a nitrogen atmosphere to induce the formation of dislocations at an interface between the patterned nitride and the semiconductor substrate; and evaluating at least one property that is related to the formed dislocations.
The invention relates to a susceptor for a device for depositing a layer of semiconductor material on a substrate wafer (40) by means of deposition from the gas phase, the susceptor comprising a susceptor plate and at least one substrate holder (5) for a substrate wafer (40) on the susceptor plate, wherein the at least one substrate holder (5) comprises: - a circular-disk-shaped lower part (10) having an upper bearing surface, - a substrate carrier ring (20) lying on the upper bearing surface of the lower part (10), and - support elements (30) for supporting the edge of the substrate wafer (40), and wherein the support elements (30) are disposed concentrically about the ring center point of the substrate carrier ring (20), characterized in that the substrate carrier ring (20) has insertion openings and the support elements (30) have insertion pieces, the insertion pieces are exchangeably disposed in at least a portion of the insertion openings, and the support elements have a radial width of 5 mm or less. The invention also relates to a device for depositing a layer of semiconductor material on a substrate wafer (40) by means of deposition from the gas phase, and to a method for depositing an epitaxial layer.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
233 on a substrate comprising the following steps: Polishing the substrate to a roughness of not more than 300 x 10-12344) for not less than 12 min and not more than 20 min, the aqueous solution having a phosphoric acid concentration of at least 85% by volume, annealing the substrate at not less than 850°C and not more than 950°C in an atmosphere consisting essentially of high purity oxygen, metalorganic vapor phase epitaxy in an apparatus for metalorganic vapor phase epitaxy (MOVPE) comprising a shower head through which a gas stream is directed to the surface of the substrate, and wherein a distance between the shower head and the surface of the substrate is set wherein the gas stream comprises the components triethylgallium (TEGa), high purity oxygen and high purity argon, characterized in that the distance between the shower head and the surface of the substrate is more than 10 mm and less than 15 mm, and the proportionate gas flow of the high purity argon is not less than 3000 sccm and not more than 10000 sccm and the molar ratio of the high-purity oxygen and triethylgallium (TEGa) is more than 300 and less than 400.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
C30B 27/00 - Single-crystal growth under a protective fluid
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
The invention relates to a method for pulling a crystal from silicon using the Czochralski method, wherein, during the crystal pulling: a first crystal is produced by applying a default curve in a crystal pulling system; the produced first crystal is measured to check for crystal defects; the result of the measurement to check for crystal defects is compared with a desired measurement result; and, on the basis of the deviation of the result of the measurement from a desired measurement result, a new default curve is calculated which is used to produce another crystal; characterised in that a model, which has been calculated using a machine learning method, is used to calculate the new default curve.
DEVICE AND METHOD FOR PRESSING AN UPPER POLISHING CLOTH AGAINST AN UPPER POLISHING PLATE OF A MACHINE FOR SIMULTANEOUSLY POLISHING A FRONT SIDE AND A REAR SIDE OF A SEMICONDUCTOR WAFER
The invention relates to a device and a method for pressing an upper polishing cloth against an upper polishing plate of a machine for simultaneously polishing a front side and a rear side of a semiconductor wafer between the upper polishing plate and a lower polishing plate. The device comprises: two parallel linear rails which are arranged at a short distance above the lower polishing plate in parallel with an intermediate radius of the lower polishing plate; a main body to which the linear rails are attached; two driven carriages which can be moved along the linear rails; actuators which are carried by the carriages for raising and lowering a roller which is attached to the actuators and arranged between the linear rails; and a controller for synchronously moving the carriages back and forth between an outer and an inner pin ring of the machine and for synchronously moving the actuators.
B24B 37/08 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
A heteroepitaxial wafer comprising in the following order (1) a substrate made of Silicon having a thickness, a diameter, a crystal orientation, a resistivity, a frontside and a backside, (2) a nucleation layer comprising AlN and 3C-SiC, (3) a first boron nitride layer having a first boron nitride layer thickness and (4) a layer of nitride having a nitride layer thickness comprising an element out of the list of elements of Aluminum, Gallium, Indium and Thallium.
A characteristic thickness value of an edge of a wafer is determined, including at a notch position. The wafer is placed in a placement area, surrounded by a boundary, of susceptor for depositing an epitaxial layer. The characteristic thickness value at the notch position is checked to see if it differs by more than a percentage limit from the characteristic thickness value at an edge position having the greatest characteristic thickness value. The placing of the substrate wafer on the placement area is executed in such a way that a distance of the wafer from the boundary of the placement area is smaller at the edge position having the greatest characteristic thickness value or at the notch position than at other edge positions.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The invention relates to a device for cleaning exhaust gas of dust during a crystal growing process, comprising a housing in which filter cartridges are installed in an upper region of the housing such that raw gas introduced via a first opening in the housing can be cleaned of particles, and the resulting clean gas can be discharged out of the housing via a second opening. The device additionally comprises a hollow conical component with an opening angle, said component being installed in a lower part of the housing such that the opening of the component points in the direction of the filter cartridge in the upper region so that particles which are released from the filter cartridge are collected in the hollow conical component. The device additionally comprises a suction line comprising an opening for suctioning the collected particles. The invention is characterized in that the opening points downwards.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
B01D 46/24 - Particle separators, e.g. dust precipitators, using rigid hollow filter bodies
45.
METHOD FOR SIMULTANEOUSLY SLICING A MULTIPLICITY OF SLICES FROM A WORKPIECE BY MEANS OF A WIRE SAW
A method for simultaneously slicing a multiplicity of slices (34) from a workpiece (1) by means of a wire saw, comprising a slicing grinding process, wherein a workpiece (1) is moved perpendicularly to a longitudinal axis (26) of the workpiece towards a wire web (24) of a sawing wire (4) stretched between two wire guide rollers (5, 6), which sawing wire (4) is moved in the longitudinal direction of the sawing wire, wherein a cooling lubricant is fed to the wire web (24), and wherein slices (34) which are fastened to a strip (2) and between which there are slicing gaps (22) are produced between wire sections of the wire web (24), and the strip (2), and removing the strip (2) and the slices (34) from the wire web (24), wherein, during removal of the strip (2) and the slices (34), the slicing gaps (22) are sprayed with a liquid (21) by means of a spray device until the wire sections have left the slicing gaps (22), wherein the liquid (21) is fed at high pressure through nozzles (14) fastened to nozzle strips (16, 17) which are moved in oscillating fashion parallel to the longitudinal axis (26) of the workpiece (1), wherein the liquid (21) and entrained air (35) sporadically excite the slices (34) to vibrate.
A cover for a cleaning module and a method for cleaning a semiconductor wafer, in which the semiconductor wafer is treated with a liquid in a vertically oriented manner during a cleaning step, the cover comprising a main body with a wedge-shaped cross section, a sealing frame for depositing the cover on the cleaning module, a hood which covers the main body with a slot for introducing the semiconductor wafer into the cleaning module, and a bracket which is fastened to the hood such that it can be displaced over the slot, characterized by a first drain channel which is machined into an upper side surface of the bracket parallel to the slot and along an edge boundary of the bracket close to the slot, and by a screen which can be displaced over the main body and over the slot, and by a second drain channel which is machined into an upper side surface of the screen parallel to the slot and along an edge boundary of the screen close to the slot. The bracket and the screen are pushed against one another, in order that, during the depositing or receiving of the semiconductor wafer by means of a gripping device, the width of the slot is limited to a dimension which is necessary for movements of the gripping device.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
47.
METHOD FOR CLASSIFYING UNKNOWN PARTICLES ON A SURFACE OF A SEMI-CONDUCTOR WAFER
Unknown particles on a surface of a semiconductor wafer are classified by applying a range of particles of known chemical composition and different sizes onto a test wafer, measuring the sizes of a plurality of the particles and spectrally analyzing a makeup of the particles by energy-dispersive x-ray spectroscopy, followed by ascertaining a substantive content therefrom; creating a best-fit curve to the size and substantive content of the particles; measuring the particle size of an unknown particle and recording its spectrum by energy-dispersive x-ray spectroscopy and classifying the unknown particle as the result of a comparison of the size and the substantive content of the unknown particle with the best-fit curve.
Gripper for transporting an upright semiconductor wafer, comprising a flat body having a head portion and a foot portion, which form a planar front side; arms, which extend from the head portion to spaced-apart ends in the foot portion; at end portions of the arms, a supporting surface, which is arranged so as to be set back from the plane of the front side; and holding pins, which are arranged on the end portions and are intended for establishing a clamping connection between the semiconductor wafer and the body, characterized by a channel which follows an inner side of the arms, is made in the arms and terminates at edges, wherein the edges are separated from the ends of the arms.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
49.
METHOD AND DEVICE FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER MADE OF SEMICONDUCTOR MATERIAL
A method deposits an epitaxial layer on a semiconductor substrate having a wedge-shaped cross section. The substrate is arranged in a deposition apparatus to rest concentrically on a susceptor held by a supporting shaft. The supporting shaft rotates with a time period. Deposition gas is passed over the substrate between a gas inlet and outlet. Flushing gas is passed along a lower side of a preheating ring and of the susceptor. The supporting shaft is displaced with the time period along a displacement path from a position where a thinner edge of the substrate has its smallest distance from the gas inlet, to where the thinner edge has its largest distance therefrom, and back.
C23C 16/52 - Controlling or regulating the coating process
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
The invention relates to a device for packaging wafer cassettes in a shipping box, comprising: a loading station, which is able to receive a shipping box (101) for semiconductor wafers; an element (102) for writing and reading an RFID tag attached to the shipping box; an element (103) for optically inspecting add-on parts of the shipping box by means of a camera; an element (104) for equipping the shipping box with a desiccant bag; an element (105) for closing a bag, which surrounds the shipping box, by means of a weld seam; an element (106) for checking the tightness of a weld seam; an element (107) for attaching labels to a shipping box; an element (108) for automatically transporting the shipping box, in the form of a robot arm; an element (109) for storing packaging material; and, an element (110) which is able to receive a shipping box for semiconductor wafers and to store it for transport away.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
A method for processing a silicon wafer, the method including cutting an ingot to form a wafer, extracting from measured shape data a cross-sectional profile, the cross-sectional profile passing through the center of the wafer and being aligned with a cutting direction of an ingot, interpolating the shape data with a fixed and pre-determined step size, fitting a first second-degree polynomial to the cross-sectional profile, determining a residual profile by subtracting the polynomial from the cross-sectional profile, fitting a second second-degree polynomial to the residual profile using a sliding window of pre-determined width to determine a position, height, and curvature of each peak and valley of the residual profile, determining a waviness parameter based on the position, height, and curvature of each peak and valley of the residual profile, and further processing the wafer based on the waviness parameter and a predetermined waviness threshold.
G01B 21/30 - Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
H01L 21/66 - Testing or measuring during manufacture or treatment
52.
Method and device for producing a single crystal of silicon, which single crystal is doped with n-type dopant
Single crystal silicon cylindrical portions grown by the CZ method and highly doped with one or more n-type dopants so as to have a resistivity of not more than 2 mΩcm are prepared by directing dopant in a gas flow from an external sublimation apparatus into the pulling chamber through or below the heat shield, to the bottom of an annular ring of the heat shield and from there through a plurality of nozzles toward the surface of the melt.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
C30B 15/10 - Crucibles or containers for supporting the melt
C30B 15/26 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using television detectorsStabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using photo or X-ray detectors
A method heteroepitaxially deposits a silicon germanium layer on a substrate. The silicon germanium layer has a composition Si1-xGex, where 0.01≤x≤1. The substrate is a silicon single crystal wafer or a silicon-on-insulator wafer. The method includes: providing a mask layer atop the substrate; removing the mask layer in an edge region of the substrate to provide access to an annular-shaped free surface of the substrate in the edge region of the substrate surrounding a remainder of the mask layer; depositing an edge reservoir consisting of a relaxed or partially relaxed silicon germanium layer atop the annular-shaped free surface of the substrate; removing the remainder of the mask layer; and depositing the silicon germanium layer atop the substrate and atop the edge reservoir, the silicon germanium layer contacting an inner lateral surface of the edge reservoir.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C23C 16/06 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
C23C 16/04 - Coating on selected surface areas, e.g. using masks
C23C 16/02 - Pretreatment of the material to be coated
A multiplicity of slices are simultaneously sliced from a workpiece during a slicing operation using a wire saw. A non-linear pitch function dTAR(WP) is selected dependent on a target thickness value function TTAR(WP), a pitch function dINI(WP) and a thickness value function TINI(WP), dTAR(WP) and adjacent grooves in the wire guide rollers are assigned a pitch at a position WP during the slicing operation, TINI(WP) slices which are obtained during a plurality of preceding slicing operations by means of the wire saw at the position WP are assigned a thickness value, dINI(WP), adjacent grooves in the wire guide rollers at the position WP are assigned a pitch during the preceding slicing operations, TTAR(WP) slices which are sliced off during the slicing operation at the position WP are assigned a target thickness value, WP denoting the axial position of the adjacent grooves with respect to the axes of the wire guide rollers.
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
55.
METHOD FOR CLEANING SEMICONDUCTOR WAFERS IN A CLEANING LINE
The invention relates to a method for cleaning semiconductor wafers in a cleaning line, comprising at least two cleaning modules in which, one after another during cleaning steps, a vertically orientated semiconductor wafer is treated with a fluid of the respective cleaning step, wherein at least one gripper system comprising two neighbouring manipulators is moved over one of the cleaning modules, and the one manipulator is moved through a slot in a cover of the one cleaning module in order to deposit or retrieve the semiconductor wafer, characterised in that the other manipulator is arranged between the slot in the cover of the one cleaning module and a slot in a cover of the other cleaning module.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
56.
Method for separating a plurality of slices from workpieces by means of a wire saw during a sequence of separation processes
A method cuts slices from workpieces using a wire saw having a wire array, which is tensioned in a plane between two wire guide rollers supported between fixed and floating bearings and having a chamber and a shell. The workpiece is fed through the wire array along a feed direction perpendicular to a workpiece axis, while simultaneously changing the shells' lengths by adjusting a temperature of the chambers with a first cooling fluid in accordance with a first correction profile specifying a change in the shells' lengths based on the depth of cut. The floating bearings are simultaneously axially moved by adjusting a temperature of the fixed bearings with a second cooling fluid in accordance with a second correction profile, which specifies a travel of the floating bearings based on the depth of cut. The first correction profile and the second correction profile are opposed to a shape deviation.
B23D 61/18 - Sawing tools of special type, e.g. wire saw strands, saw blades or saw wire equipped with diamonds or other abrasive particles in selected individual positions
B23D 59/04 - Devices for lubricating or cooling straight or strap saw blades
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
57.
METHOD AND APPARATUS FOR PRODUCING A GAS CURTAIN OF PURGE GAS IN A SLIT VALVE TUNNEL
Contamination of semiconductor wafers during coating and other operations is mitigated by passing the wafer through a tunnel with a slit providing a gas curtain which impinges upon the wafer as the wafer is transported from one station to the next station in the processing apparatus.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
F16K 3/02 - Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing facesPackings therefor
F16K 51/02 - Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
58.
APPARATUS AND METHOD FOR DEPOSITING A LAYER OF SEMICONDUCTOR MATERIAL ON A SUBSTRATE WAFER
An apparatus for depositing a layer of semiconductor material on a substrate wafer. The apparatus includes a base ring between an upper and a lower dome, a susceptor as carrier of the substrate wafer during the deposition of the layer, a gas inlet and a gas outlet, an outgoing gas line and gas supply lines for passing process gas over an upper side face of the substrate wafer, a slit valve tunnel and a slit valve door, and a lifting and rotating unit for lifting and turning the susceptor and the substrate wafer. The apparatus also including an amorphous layer including silicon and hydrogen disposed over one or more stainless steel components of the apparatus.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C30B 25/08 - Reaction chambersSelection of materials therefor
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/3205 - Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layersAfter-treatment of these layers
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
59.
METHOD FOR PRODUCING A VACUUM GRIPPER FOR SEMICONDUCTOR WORKPIECES, AND VACUUM GRIPPER
A vacuum gripper for semiconductor workpieces is produced from at least one base material by means of an additive manufacturing method such as 3D printing. The method may also include printing various other feature of the vacuum gripper such as reinforcing structures and or seals. The gripper may include a plurality of suction openings and corresponding channels for providing a negative pressure when cooperating with a vacuum.
Slices are cut from workpieces during a sequence of cut-off operations by a wire saw, having a wire array. The wire array is tensioned in a plane between two wire guide rollers supported between fixed and floating bearings. During each cut-off operation, a workpiece is fed through the wire array perpendicular to a workpiece axis and the wire array plane. The workpiece is fed with simultaneous axial movement of the floating bearings by adjusting a temperature of the fixed bearings in correlation with a first correction profile, which specifies a travel of the floating bearings in dependence on the depth of cut. In dependence on the depth of cut, operating parameters are set, such as the feed rate, an amount of working fluid fed to the wire array per unit time, a temperature of the working fluid, a wire speed, a wire consumption per cut-off operation, or a wire tension.
A method for manufacturing a substrate wafer for building group III-V devices thereon, comprising providing a silicon single crystal wafer; forming a gettering region below a top surface of the silicon single crystal wafer; forming a nitrogen enriched passivation layer representing a top portion of the substrate wafer.
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
H01L 21/265 - Bombardment with wave or particle radiation with high-energy radiation producing ion implantation
62.
METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER
An epitaxial layer is deposited on a substrate wafer by a method including measuring an edge geometry of the wafer, placing the wafer at a position in a pocket of a susceptor of a device for depositing the layer based on the edge geometry, heating the wafer, and passing a process gas over the wafer. Thickness characteristic values are assigned to edge portions based on the edge geometry. The position in the pocket is determined as function of an expected change in the thickness characteristic value to an eccentricity E, which is determined by prior testing of the device. The function is a result of the shape of the pocket which has a boundary having a circular circumference. The distance from the wafer to the boundary of the pocket is less at thicker edge portions and greater at thinner edge portion so the layer has thicknesses inverse to the wafer thicknesses.
A heteroepitaxial wafer comprising in the following order (1) a substrate made of Silicon having a thickness a diameter and a resistivity, comprising a buried gettering layer for Hydrogen, (2) a 3C-SiC layer, (3) an Aluminum-Nitride nucleation layer, comprising in the given order a first nitrogen enriched Aluminum-Nitride region, an Aluminum-Nitride region and a second nitrogen enriched Aluminum-Nitride region.
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
A crystal piece of monocrystalline silicon suitable for the production of semiconductor wafers has a length of not less than 8 cm and not more than 50 cm and a diameter of not less than 280 mm and not greater than 320 mm, wherein the fraction of the semiconductor wafers produced therefrom that are free from pinholes having a size of not more than 30 μm is greater than 98%.
A semiconductor single-crystal silicon, is produced from a silicon substrate wafer containing interstitial oxygen in a concentration of more than 5 × 1016 AT/cm3 (new ASTM) by an RTA treatment of the wafer in a first heat treatment at a first temperature in a temperature range of not less than 1200° C. and not more than 1260° C. for a period of not less than 5 s and not more than 30 s, where the front side of the substrate wafer is exposed to an atmosphere containing argon;
a second heat treatment at a second temperature in a temperature range of not less than 1150° C. and not more than 1190° C. for a period of not less than 15 s and not more than 20 s, where the front side of the wafer is exposed to an argon and ammonia, atmosphere,
and a third heat treatment at a third temperature in a temperature range of not less than 1160° C. and not more than 1190° C. for a period of not less than 20 s and not more than 30 s, where the front side of the wafer is exposed to an atmosphere containing argon.
4222 during a first and a second stage over the surface of the substrate at a deposition temperature of not less than 800 °C; growing the buffer layer with a grade rate that is less than 10 % Ge / μm; and growing the buffer layer with a growth rate that is not less than 0.1 μm / min during the first stage and that is less than 0.1 μm / min during the second stage.
2323233 single crystal (7) is grown at a rate that dynamically decreases as the growth proceeds, to dynamically decrease the latent heat of crystallization and the amount of the heat to be dissipated from the growing single crystal (7).
Slices are cut from workpieces using a wire saw having a wire array tensioned in a plane between two wire guide rollers each supported between fixed and floating bearings and comprising a chamber and a shell enclosing a core and having guide grooves for wires. During a cut-off operation, a workpiece is fed through the wire array perpendicular to a workpiece axis and the wire array plane. The workpiece is fed through the wire array while simultaneously: changing shell lengths by adjusting chamber temperatures in dependence on a depth of cut and a first correction profile; and moving the workpiece along the workpiece axis in accordance with a second correction profile. The correction profiles are opposed to a shape deviation.
B23D 57/00 - Sawing machines or sawing devices not covered by one of groups
B23D 59/00 - Accessories specially designed for sawing machines or sawing devices
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
69.
SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR THE PRODUCTION THEREOF
A semiconductor wafer of single-crystal silicon has an oxygen concentration per new ASTM of not less than 5.0×1017 atoms/cm3 and not more than 6.5×1017 atoms/cm3; a nitrogen concentration per new ASTM of not less than 1.0×1013 atoms/cm3 and not more than 1.0×1014 atoms/cm3;
a front side having a silicon epitaxial layer wherein
the semiconductor wafer has BMDs whose mean size is not more than 10 nm determined by transmission electron microscopy and whose mean density adjacent to the epitaxial layer is not less than 1.0×1011 cm−3, determined by reactive ion etching after having subjected the wafer covered with the epitaxial layer to a heat treatment at a temperature of 780° C. for a period of 3 h and to a heat treatment at a temperature of 600° C. for a period of 10 h.
C30B 15/22 - Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal
C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
70.
METHOD FOR SEPARATING A PLURALITY OF SLICES FROM WORKPIECES BY MEANS OF A WIRE SAW DURING A SEQUENCE OF SEPARATION PROCESSES
The invention relates to a method for separating a plurality of slices from workpieces (4) by means of a wire saw, wherein a wire grating (2) is tensioned in a plane between two wire-guiding rollers (1), wherein each of the two wire-guiding rollers (1) is mounted between a fixed bearing (5) and a floating bearing (6). The method involves delivering the workpiece (4) via the wire grating (2) by controlling the temperature of the workpiece (4) by wetting the workpiece (4) with a cooling medium, while simultaneously axially shifting the floating bearing (6) by controlling the temperature of the fixed bearing (5) with a cooling fluid according to the specification of a first temperature profile, and while simultaneously shifting the workpiece (4) along the workpiece axis by means of a control element (15) according to the specification of a second correction profile.
B28D 7/02 - Accessories specially adapted for use with machines or devices of the other groups of this subclass for removing or laying dust, e.g. by spraying liquidsAccessories specially adapted for use with machines or devices of the other groups of this subclass for cooling work
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
B28D 7/04 - Accessories specially adapted for use with machines or devices of the other groups of this subclass for supporting or holding work
71.
METHOD FOR SEPARATING A PLURALITY OF SLICES FROM WORKPIECES BY MEANS OF A WIRE SAW DURING A SEQUENCE OF SEPARATION PROCESSES
A method uses a wire saw to cut slices from a workpiece. The wire saw has an array of saw wire tensioned in a plane between two rollers supported between fixed and floating bearings. During a cut-off operation, the workpiece is fed through the wire array with simultaneous axial movement of the floating bearings by adjusting the temperature of the fixed bearings with a cooling fluid in accordance with the temperature of the cooling fluid being in dependence on a depth of cut and correlating with a first correction profile, which specifies the travel of the floating bearings in dependence on the depth of cut. Also, the workpiece is fed through the wire array while simultaneously moving the workpiece along the workpiece axis in accordance with a second correction profile, specifying the travel of the workpiece. The first and second correction profiles are opposed to a shape deviation.
B23D 57/00 - Sawing machines or sawing devices not covered by one of groups
B23D 59/00 - Accessories specially designed for sawing machines or sawing devices
B23D 59/04 - Devices for lubricating or cooling straight or strap saw blades
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
72.
METHOD AND DEVICE FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER MADE OF SEMICONDUCTOR MATERIAL
A method and an apparatus for depositing an epitaxial layer on a substrate wafer made of semiconductor material. The method comprises the arrangement of the substrate wafer and a susceptor in a deposition device such that the substrate wafer rests on the susceptor and the susceptor is held by arms of a support shaft; monitoring whether a misalignment of the susceptor exists with respect to its position relative to the position of a pre-heating ring surrounding it; monitoring whether a misalignment of the support shaft exists with respect to its position relative to the position of the pre-heating ring; if at least one of the misalignments is present, elimination of the respective misalignment; and the deposition of the epitaxial layer on the substrate wafer.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The invention relates to an epitaxially coated semiconductor wafer, processed by a method in which the semiconductor wafer is disposed on a susceptor in a coating apparatus and processed, wherein an etching gas is passed through the coating apparatus in an etching step. A first side of the semiconductor wafer which has been subjected to a polishing operation by CMP, or a second side of the semiconductor wafer opposite the first side, is coated with a protective layer before processing. The resulting wafer has exceptional geometry, as reflected by low ESFQR values.
A method grinds a semiconductor wafer by treating the semiconductor wafer so as to remove material by way of a grinding tool containing grinding teeth having a height h, with a coolant being supplied into a contact region between the semiconductor wafer and the grinding tool, in which, at any time of the grinding, a flushing fluid is applied onto a region on one side of the semiconductor wafer by way of a nozzle.
The invention relates to a method for cleaning a face of a semiconductor wafer, having the following steps in the given order: (1) a first cleaning step for a cleaning process using ozonized water and a subsequent rinsing step using clean water, (2) a second cleaning step which includes a treatment step using ozonized water, said treatment step being followed by a treatment step using an HF-containing liquid, wherein the second cleaning step can be repeated multiple times, (3) a third cleaning step for a cleaning process using ozonized water and a subsequent rinsing step using clean water, and (4) a drying step in which the face of the semiconductor wafer is dried. The invention is characterized in that a pre-cleaning step using water is carried out directly prior to the first cleaning step so that the face of the semiconductor wafer is still wet when the first cleaning step begins.
Disclosed is a process for manufacturing a monocrystalline silicon semiconductor wafer, involving, in the sequence indicated, growing a silicon single crystal according to the CZ technique; slicing at least one monocrystalline silicon semiconductor wafer off the single crystal; performing a first, a second and a third RTA treatment of the semiconductor wafer.
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
78.
PROCESS FOR PRODUCING A SINGLE CRYSTAL FROM SILICON
A process for producing a single crystal from silicon, comprising: the installing of a feed rod of silicon in a float-zone apparatus, the feed rod having a diameter of not less than 230 mm and not more than 270 mm, the installing of a first hollow cylinder having a bottom edge and an internal diameter which is larger by not less than 30 mm and not more than 50 mm than the diameter of the feed rod, the installing of a second hollow cylinder having a top edge and an internal diameter which is larger by not less than 20 mm and not more than 60 mm than the target diameter of the single crystal, pulling a cylindrical part of the single crystal which has a target diameter of not less than 290 mm and not more than 310mm, wherein the feed rod at the melting front forms an outer melting edge and the monocrystalline rod on the growth side forms a crystallizing edge, wherein the pulling speed is not less than 1.3 mm/min and not more than 1.5 mm/min, preferably not less than 1.35 mm/min and not more than 1.45 mm/min, wherein the vertical distance of the bottom edge of the first hollow cylinder from the outer melting edge is smaller than 2 mm, and the top edge of the second cylinder protrudes not less than 1 mm and not more than 10 mm over the crystallizing edge.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
A method for grinding a semiconductor wafer, wherein the semiconductor wafer is machined in a material-removing manner by means of a grinding tool containing grinding teeth having a height h while supplying a cooling medium into a contact region between the rotating semiconductor wafer and the grinding tool, wherein, at each instant of the grinding operation, a first coolant flow is applied to a first region on one side of the semiconductor wafer by means of one or more nozzles, and wherein, at each instant of the grinding operation, a second coolant flow is applied to a second region on the one side of the semiconductor wafer by means of one or more nozzles, characterized in that the first region is delimited by the right lower quadrant of the semiconductor wafer and the second region is delimited by the left lower quadrant, and the quotient of the first coolant flow and the sum of the first and second coolant flow is not greater than 35% and not less than 25%.
B24B 1/00 - Processes of grinding or polishingUse of auxiliary equipment in connection with such processes
B24B 7/22 - Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfacesAccessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
B24B 55/02 - Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
B24B 37/08 - Lapping machines or devicesAccessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
B24B 7/17 - Single-purpose machines or devices for grinding end faces, e.g. of gauges, rollers, nuts or piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
B24D 7/06 - Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front faceBushings or mountings therefor with inserted abrasive blocks, e.g. segmental
B24B 37/04 - Lapping machines or devicesAccessories designed for working plane surfaces
80.
METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON
A method of producing an epitaxially coated semiconductor wafer of monocrystalline silicon, comprising: providing a melt of silicon in a crucible; pulling a single crystal of silicon from a surface of the melt with a pulling speed v by the CZ method, wherein oxygen and boron are incorporated into the single crystal and the concentration of oxygen in the single crystal is not less than 6.4 x 1017atoms/cm3and not more than 8.0 x 1017atoms/cm3, and the resistivity of the single crystal is not less than 10 mΩcm and not more than 25 mΩcm, and wherein the melt is not doped with nitrogen and/or carbon; applying a CUSP magnetic field to the melt during the pulling of the single crystal of silicon, surrounded by a heat shield; controlling the pulling speed v and an axial temperature gradient G at the phase boundary between the single crystal and the melt, in such a way that the quotient v/G is not less than 0.13 mm2/°C min and not more than 0.20 mm2/°C min; heating the single crystal by means of an annular heater which is disposed above the melt and surrounds the single crystal; producing a substrate wafer of monocrystalline silicon with a polished lateral surface by processing the single crystal of silicon; and depositing an epitaxial layer of silicon on the polished lateral surface of the substrate wafer, wherein the depositing of the epitaxial layer is the first heat treatment in the course of which the substrate wafer is heated to a temperature of not less than 700°C.
Wafers are sliced from a workpiece using a wire saw during slicing operations. The wire saw has a wire web of sawing wire and a setting device. The wire web is stretched in a plane between wire guide rollers that are mounted between fixed and moveable bearings. During each of the slicing operations, the setting device feeds the workpiece through the wire web along a feed direction perpendicular to a workpiece axis and perpendicular to the plane of the wire web. During each of the slicing operations, the movable bearings move oscillatingly axialy. The feeding of the workpiece through the wire web includes a simultaneous displacement of the workpiece along the workpiece axis using the setting element in accordance with a correction profile, which includes an oscillating component that is opposite to the effect which the axial moving of the movable bearings has on the shape of the sliced-off wafers.
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
82.
A METHOD FOR MANUFACTURING A SUBSTRATE WAFER FOR BUILDING GROUP III-V DEVICES THEREON AND A SUBSTRATE WAFER FOR BUILDING GROUP III-V DEVICES THEREON
A substrate wafer and a method for manufacturing a substrate wafer for building group III-V devices thereon, the method comprising providing a silicon single crystal wafer; providing a first etch stop layer on top of the silicon single crystal wafer; depositing a silicon layer on a top surface of the first etch stop layer; providing a second etch stop layer on top of the silicon layer, the second etch stop layer being a SiC layer; forming an opening in the second etch stop layer; and forming a cavity by etching through the opening into the silicon layer, the cavity in depth direction extending to the first etch stop layer and laterally extending such that the cavity undercuts the second etch stop layer.
211 and a bore having a diameter d wherein the dish is secured between the seed holder and the drawing shaft such that the opening faces towards drawing shaft.
232323llefuuefefef represents a dimensionless layer surface reflectivity index calculated from the quotient of the measured second layer surface reflectivity and the extrapolated layer surface reflectivity from the regression curve evaluated at the second layer thickness.
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
A device is for drying disc-shaped substrates. The device has an elongated body, which tapers upwards to form a wedge having an angle α between two upper surfaces and an upper edge. The upper edge is configured to support a disc-shaped substrate. An upper surface of the two upper surfaces has a groove having an increasing groove depth with increasing distance from the upper edge.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A device is for drying disc-shaped substrates. The device has an elongated body having a top surface, a bottom surface, and a circumferential surface. The elongated body has a hole in the top surface forming a channel, which extends to a lower drainage part of the elongated body, and is chamfered having a chamfer depth and a chamfer angle forming an edge between the chamfer and the top surface and forming a conical recess suitable for resting a disc shaped substrate. The chamfer angle is more than 10° and less than 30°. The chamfer depth is more than 6 mm and less than 12 mm.
A device is for drying disc-shaped substrates. The device has an elongated body, which tapers upwards to form a wedge having an angle α between two surfaces and an upper edge. The upper edge is suitable for holding the disc-shaped substrates. The two surfaces have more than one hole, each forming channels, which extend to a lower drainage part of the elongated body.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
88.
METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER MADE OF SEMICONDUCTOR MATERIAL IN A DEPOSITION DEVICE
The invention relates to a method for depositing an epitaxial layer on a substrate wafer made of semiconductor material in a deposition device, the method comprising: placing the substrate wafer on a susceptor of the deposition device, which susceptor is surrounded by, and separated by a gap from, a preheating ring and is held by a support shaft; determining an eccentricity between an axis extending perpendicularly through the centre of the preheating ring and an axis extending perpendicularly through the centre of the susceptor; conducting deposition gas over the substrate wafer in a flow direction pointing from a gas inlet to a gas outlet; conducting purge gas along a lower face of a preheating ring and a lower face of the susceptor; rotating the support shaft about a rotational axis at a frequency; characterised by the shifting of the support shaft from a starting position, in which its rotational axis is arranged along the axis extending perpendicularly through the centre of the preheating ring, to an end position, and back to the starting position, at the frequency of the rotation of the support shaft, the shifting path from the starting position to the end position depending on the eccentricity.
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
C23C 16/52 - Controlling or regulating the coating process
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C30B 25/10 - Heating of the reaction chamber or the substrate
A method cuts semiconductor wafers. The method includes: cutting a semiconductor ingot into a workpiece; and sawing the workpiece into slices using a wire grid having a fixed abrasive grain wire, while moving workpiece towards the wire grid. At a first contact of the workpiece with the wire grid, an initial cutting speed is less than 2 mm/min, coolant flow is less than 0.1 l/h and a wire speed is greater than 20 m/s. The workpiece is then guided through the wire grid until a first cutting depth is reached, and then the coolant flow is increased to at least 2000 l/h. The cutting speed is reduced to less than 70% of the initial cutting speed between the first contact of the workpiece with the wire grid up to a cutting depth of half a diameter of the cylinder, and is then increased.
B28D 5/04 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor by tools other than of rotary type, e.g. reciprocating tools
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
90.
METHOD FOR PRODUCING SEMICONDUCTOR WAFERS FROM SILICON
Silicon single crystals having an oxygen concentration of greater than 2×1017 at/cm3, a concentration of pinholes having a diameter of greater than 100 μm of less than 1.0×10−5 l/cm3, a carbon concentration of less than 5.5×1014 at/cm3, an iron concentration of less than 5.0×109 at/cm3, a COP concentration of fewer than 1000 defects/cm3, a LPIT concentration of fewer than 1 defect/cm2 and a crystal diameter of greater than 200 mm, are produced by the Czochralski method employing a purge gas at specified pressures and flow rates.
An apparatus is configured to pull a single crystal of semiconductor material from a melt contained in a crucible. The apparatus includes: a rotatable pulling shaft; a rotatable crucible shaft; a double worm gear between a drive and the pulling shaft; and a further double worm gear between a further drive and the crucible shaft.
A method produces a single-crystal silicon semiconductor wafer. A single-crystal silicon substrate wafer is double side polished. A front side of the substrate wafer is chemical mechanical polished (CMP). An epitaxial layer of single-crystal silicon is deposited on the front side of the substrate wafer. A first rapid thermal anneal (RTA) treatment is performed on the coated substrate wafer at 1275-1295° C. for 15-30 seconds in argon and oxygen, having oxygen of 0.5-2.0 vol %. The coated substrate wafer is then cooled at or below 800° C., with 100 vol % argon. A second RTA treatment is performed on the coated substrate wafer at a 1280-1300° C. for 20-35 seconds in argon. An oxide layer is removed from a front side of the coated substrate wafer. The front side of the coated substrate wafer is polished by CMP.
H01L 21/306 - Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/34 - Semiconductor bodies having polished or roughened surface the imperfections being on the surface
93.
PROCESS FOR MANUFACTURING SEMICONDUCTOR WAFERS CONTAINING A GAS-PHASE EPITAXIAL LAYER IN A DEPOSITION CHAMBER
Disclosed is a process for manufacturing semiconductor wafers containing a gas-phase epitaxial layer in a deposition chamber, involving having a robot place a substrate wafer on a susceptor having a circular circumference, the robot moving the substrate wafer into a drop-off position and placing it on the susceptor, the center of the substrate wafer not lying over the center of the susceptor in the drop-off position because of a predefined corrective parameter; and depositing an epitaxial layer on the substrate wafer, characterized in that a first number of substrate wafers having a specific resistance lying in a first range is moved by the robot into the drop-off position with a first predefined corrective parameter, and a second number of substrate wafers having a specific resistance lying in a second range is moved by the robot into the drop-off position with a second predefined corrective parameter, the first and second predefined corrective parameters differing from one another.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
94.
PROCESS FOR MANUFACTURING SEMICONDUCTOR WAFERS CONTAINING A GAS-PHASE EPITAXIAL LAYER IN A DEPOSITION CHAMBER
Disclosed is a process for manufacturing semiconductor wafers containing a gas-phase epitaxial layer in a deposition chamber, involving removing, from the deposition chamber by etching the deposition chamber, material settled in the deposition chamber during preceding coating operations; performing successive coating operations, during each of which an epitaxial layer is deposited on a substrate wafer in the deposition chamber as a first gas stream of a first deposition gas is conducted over the substrate wafer and a semiconductor wafer containing an epitaxial layer is produced; before, during or after each of the successive coating operations, conducting a second gas stream of a second deposition gas to a peripheral region of the substrate wafer or the semiconductor wafer containing the epitaxial layer, wherein at least one process parameter is modified which has the effect that conducting the second deposition gas results in an increase in the amount of material deposited in the peripheral region according to the number of coating operations performed since the removal of material from the deposition chamber.
C23C 16/44 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
C23C 16/455 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C30B 25/14 - Feed and outlet means for the gasesModifying the flow of the reactive gases
Disclosed is a process for manufacturing semiconductor wafers containing a gas-phase epitaxial layer in a deposition chamber, involving removing, from the deposition chamber by etching the deposition chamber, material settled in the deposition chamber during preceding coating processes; performing successive coating operations in the etched deposition chamber, each of said coating operations involving having a robot place a substrate wafer on a susceptor having a circular circumference, the robot moving the substrate wafer into a drop-off position and placing it on the susceptor, the center of the substrate wafer not lying over the center of the susceptor in the drop-off position because of a predefined corrective parameter; and depositing an epitaxial layer on the substrate wafer such that a semiconductor wafer cointaining an epitaxial layer is produced, characterized in that for each first substrate wafer moved by the robot into the drop-off position, the value of the predefined corrective parameter corresponds to a mean value of differences in the positions of a number of previously coated substrate wafers which had been the first substrate wavers to be coated following a preceding chamber etching operation.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
96.
Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer
+-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer;
3;
a resistivity of the substrate wafer of not less than 5 mΩcm and not more than 10 mΩcm; and
the potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
Transport container for transporting semiconductor wafers produced in a predetermined shape from a main material by 3D printing, wherein at least a region of a surface of the transport container comprises a coating material for protection against chemicals suitable for etching the semiconductor wafers, wherein the coating material has been applied by means of a low-temperature coating process, in particular a low temperature sintering process, preferably at a temperature below 150°C, and the coating material consists of polytetrafluoroethylene, perfluoroalkoxy polymer or polyvinylidene fluoride, wherein the predetermined shape of the transport container contains an apparatus suitable for discharging liquid media in the bottom thereof and the predetermined shape of the transport container contains one or more integrated workpiece holders for semiconductor wafers and/or carriers for semiconductor wafers, so that the semiconductor wafers to be transported may be loaded in an upright position and the intended transport direction of the transport container in an automatic transport system runs parallel to the front or back side of the semiconductor wafers.
H01L 21/673 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components using specially adapted carriers
98.
Method for producing semiconductor wafers of monocrystalline silicon by pulling a single silicon crystal from a melt contained in a crucible and continually changing the rotational direction of the crucible
3; subjecting the melt to a horizontal magnetic field; rotating the crucible at a rotational velocity and in a rotational direction during the pulling of the cylindrical section of the single crystal; and removing the semiconductor wafers of monocrystalline silicon from the cylindrical section of the single crystal. An amount of rotational velocity, averaged over time, is less than 1 rpm and the rotational direction is changed continually and the amplitude of the rotational velocity before and after the change in the rotational direction is not less than 0.5 rpm and not more than 3.0 rpm.
C30B 30/04 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
99.
DEVICE AND METHOD FOR PRODUCING A MONOCRYSTALLINE SILICON ROD IN A ZONE-MELTING PULLING SYSTEM
The invention relates to a method and a device for pulling a monocrystalline silicon rod in a pulling system for zone melting, the method comprising the following steps: (1) providing a stock rod made of silicon, which comprises an azimuthal groove at one end; (2) attaching a lower part, which comprises three gripping arms, each gripping arm being shaped such that one end fits into the azimuthal groove of the stock rod and another end is rotatably attached to the lower part; (3) suspending the lower part, together with the stock rod, on an upper part, which contains a connecting element connected to a pulling shaft of the zone-melting pulling system, such that the upper part and the lower part are radially interlockingly connected to each other, the upper part comprising an element for radial orientation, and three length-adjustable spacing elements being attached to the upper part such that the spacing elements can apply force to respective gripping arms; (4) moving the element for radial orientation such that the axis of rotation of the stock rod at the end at which the groove is located corresponds to the axis of rotation of the pulling shaft; (5) setting the length-adjustable spacing elements such that the axis of rotation of the stock rod at the end remote from the groove corresponds to the axis of rotation of the pulling shaft; (6) pulling a conical part of a monocrystalline rod; (7) pulling a cylindrical part of the monocrystalline rod.
C30B 35/00 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
100.
APPARATUS AND METHOD FOR PRODUCING A DOPED MONOCRYSTALLINE ROD MADE OF SILICON
The invention relates to an apparatus and a method for producing a doped crystal according to the Czochralski process, comprising a pressure vessel, a crucible which is located in the pressure vessel and can contain liquid silicon, and an apparatus for doping the melt, containing a housing, a storage container for holding a dopant, a conveyor belt for conveying the dopant, an apparatus for forming a packed bed on the conveyor belt, and a tube, into the first end of which tube dopant from the conveyor belt can enter and the second end of which tube points in the direction of the liquid silicon and is closed off relative to the liquid silicon by a porous separating element.
C30B 15/04 - Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction
