The invention relates to a method for producing modifications (9) in the interior of a solid body (1). The method comprises the introduction of laser radiation (14) of a laser (29) into the interior of the solid body (1) via a first surface (8) of the solid body (1). The solid body (1) forms a crystal structure. Modifications (9) are produced at predefined points in a production plane (4) in the interior of the solid body (1) by the laser radiation (14). The modifications (9) are closer to the first surface (8) than to a second surface, the second surface being parallel to the first surface (8). A plurality of linear forms (103) can be produced by the modifications (9). The solid body (1) cracks subcritically in the region of each modification (9). The subcritical cracks have an average crack length of less than 150 μm orthogonally to the direction of longitudinal extent of the linear form in question. Modifications (9) that belong to the same linear form (103) and that are produced one after the other are produced at a distance from each other that is defined by the function (d-x)/d<-0.31, where x>d.
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B23K 26/03 - Observing, e.g. monitoring, the workpiece
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
2.
METHOD FOR THINNING SOLID-BODY LAYERS PROVIDED WITH COMPONENTS
According to claim 1, the invention relates to a method for providing at least one solid-body layer (4). The solid-body layer (4) is separated from a solid body (1). The method according to the invention preferably has the steps of: producing a plurality of modifications (9) in the interior of the solid body (1) using laser beams in order to form a separation plane (8), compressive stresses being produced in the solid body (1) by the modifications (9); separating the solid-body layer (4) by separating the remaining solid body (1) and the solid-body layer (4) along the separation plane (8) formed by the modifications (9), wherein at least parts of the modifications (9) which produce the compressive stresses remain on the solid-body layer (4), and enough modifications (9) are produced that the solid-body layer (4) is separated from the solid body (1) on the basis of the modifications (9) or an external force is introduced into the solid body (1) in order to produce additional stresses in the solid body (1), said external force being so great that the stresses cause a crack to propagate along the separation plane (8) produced by the modifications; and producing a metal layer on the surface exposed by the separation of the solid-body layer (4) from the solid body (1) in order to at least partly, preferably greatly and particularly preferably completely, compensate for a deformation of the solid-body layer (4) produced by the compressive stresses of the remaining modification parts or at least partly, preferably greatly or completely, compensate for the compressive stresses.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
3.
PRODUCTION FACILITY FOR SEPARATING WAFERS FROM DONOR SUBSTRATES
The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4). According to the invention, the production facility comprises at least one analysis device (6) for determining at least one individual property, particularly the doping, of the respective donor substrate (4), a data device (10) for producing donor substrate process data for individual donor substrates (4), wherein the donor substrate process data comprise analysis data of the analysis device (6), and the analysis data describe at least the individal property of the donor substrate (4), a laser device (12) for producing modifications (14) inside the donor substrate (4) in order to form a region of detachment (16) inside the respective donor substrate (4), wherein the laser device (12) can be operated according to the donor substrate process data of a concrete donor substrate (4) for the machining of the concrete donor substrate (4), and a detachment device (18) for producing mechanical voltages inside the respective donor substrate (4) for triggering and/or guiding a crack for separating respectively at least one wafer (2) from a donor substrate (4).
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
4.
DEVICE AND METHOD FOR APPLYING PRESSURE TO STRESS-PRODUCING LAYERS FOR IMPROVED GUIDANCE OF A SEPARATION CRACK
The present invention relates to a method, according to claim 1, for separating at least one solid body layer (1), particularly a solid body disk, from a donor substrate (2). The method according to the invention comprises preferably at least the following steps: providing a donor substrate (2); producing or arranging a stress-producing layer (4) on a particularly flat surface (5) of the donor substrate (2) which axially defines the donor substrate (2); pressing at least one pressure application element (6) of a pressure application device (8) onto at least one pre-determined portion of the stress-producing layer (4), in order to press the stress-producing layer (4) onto the surface (5); separating the solid body layer (1) from the donor substrate (2) by thermally applying the stress-producing layer (4), thereby producing mechanical stress in the donor substrate (2), the mechanical stress creating a crack for separating a solid body layer (1), and the pressure application element (6) being pressed onto the stress-producing layer (4) during the thermal application of the stress-producing layer (4).
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B23K 26/14 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor
B23K 26/146 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor the fluid stream containing a liquid
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
B23K 103/00 - Materials to be soldered, welded or cut
5.
METHOD FOR PRODUCING WAFERS WITH MODIFICATION LINES OF DEFINED ORIENTATION
The present invention therefore relates to a method for separating at least one solid body layer (2) from a donor substrate (1). According to the invention, the method preferably comprises at least the steps of: providing the donor substrate (1), wherein the donor substrate (1) has crystal lattice planes (6) which are inclined in relation to a planar main surface (8), wherein the main surface (8) delimits the donor substrate (1) in the longitudinal direction of the donor substrate (1) on one side, wherein a crystal lattice plane normal is inclined in relation to a main surface normal in a first direction, providing at least one laser, introducing laser radiation of the laser into the interior of the donor substrate (1) via the main surface (8) for changing the material properties of the donor substrate (1) in the region of at least one laser focus, wherein the laser focus is formed by laser beams of the laser which are emitted by the laser, wherein the change in the material property by changing the point of entry of the laser radiation into the donor substrate (1) forms a linear shape (103), wherein the changes in the material property are generated on at least one generating plane (4), wherein the crystal lattice planes (6) of the donor substrate (1) are oriented in an inclined manner in relation to the generating plane (4), wherein the linear design (103) is inclined in relation to a sectional line (10) which is produced at the interface between the generating plane (4) and the crystal lattice plane (6), wherein, owing to the changed material property, the donor substrate (1) tears in the form of subcritical cracks, separating the solid body layer (2) by introducing an external force into the donor substrate (1) for connecting the subcritical crack or so much material on the generating plane (4) being changed by means of the laser radiation that the solid body layer (2) becomes detached from the donor substrate (1) with connection of the subcritical crack.
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B23K 103/00 - Materials to be soldered, welded or cut
6.
METHOD FOR REDUCING THE THICKNESS OF SOLID-STATE LAYERS PROVIDED WITH COMPONENTS
The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 103/00 - Materials to be soldered, welded or cut
7.
METHOD FOR IMPROVING THE SURFACE QUALITY OF A SURFACE RESULTING FROM A CRACK PROPAGATION
The invention relates to a method for producing a solid body layer (4). Said method comprises at least the following steps: producing a plurality of modifications (9) by means of laser beams in the interior of a solid body (1) to form a detaching plane (8), introducing an external force into the solid body (1) to generate tensions in the solid body (1), wherein the external force is so strong that the tensions effect a crack propagation to separate the solid body layer from the solid body along the detaching plane (8), treating the surface of the solid body layer, which is exposed by the separating of the surface, in order to increase the strength of the interior structure of the solid body layer and/or to reduce the mechanical load taking effect on the inner structure of the solid body layer (4) during a machining process, and modifying the surface quality of the treated surface of the solid body layer (4) by means of polishing.
The present invention relates to a method for separating at least one solid body layer (4) from at least one solid body (1). The method according to the invention includes the following steps: producing a plurality of modifications (9) by means of laser beams in the interior of the solid body (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid body (1), wherein the exposed surface (5) is a part of the solid body layer (4) to be separated; introducing an external force into the solid body (1) in order to create stresses in the solid body (1), wherein the external force is so strong that the stresses cause a crack propagation along the separation plane (8), and wherein the modifications to form the separation plane (8) are produced before producing the composite structure.
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
9.
LASER CONDITIONING OF SOLID BODIES USING PRIOR KNOWLEDGE FROM PREVIOUS MACHINING STEPS
The present invention relates to a method for generating control data for the secondary machining of a solid body (1), in particular wafer, which is modified by means of laser beams (10). The interior of said solid body (1) has multiple modifications (12), said modifications (12) having been produced by means of laser beams (10). The method comprises the following steps: defining a criterion of analysis for analyzing the modifications (12) produced in the interior of the solid body (1); defining a threshold value with respect to the criterion of analysis, an analytical value on one side of the threshold value triggering a secondary machining registration; analyzing the wafer by means of an analytical unit (4), said analytical unit (4) analyzing the modifications (12) with respect to the criterion of analysis and outputting analytical values regarding the analyzed modifications, said analytical values lying above or below the threshold value; outputting location data with respect to the analyzed modifications, said location data containing information regarding in which region/s of the solid body (1) the analytical value lies/lie above or below the threshold value; and generating control data for controlling a laser treatment device (11) for the secondary machining of the solid body (1), said control data comprising at least the location data of the modifications (12) registered for secondary machining.
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/03 - Observing, e.g. monitoring, the workpiece
B23K 103/00 - Materials to be soldered, welded or cut
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/66 - Testing or measuring during manufacture or treatment
10.
COMBINED LASER TREATMENT OF A SOLID BODY TO BE SPLIT
The invention relates to a method for detaching at least one solid body layer (14) from a solid body (1), wherein by means of the modifications (2) a crack guiding region (4) is provided for guiding a crack in order to detach a solid body portion (6), in particular a solid body layer, from the solid body (1). The invention preferably comprises at least the steps: moving the solid body (1) relative to a laser application device (8), successively producing laser beams (10) by means of the laser application device (8) in order to produce respectively at least one modification (2), wherein the laser application device (8) is adjusted for defined production of modifications depending on at least one parameter, in particular the transmission of the solid body at defined locations and for a defined solid body depth, wherein inhomogeneities of the solid body (1) in the region of the affected surface and/or in the region of the affected volume of the solid body (1) can be compensated for by the adjustment of the laser application device (8), detaching the solid body layer (14) from the solid body (1).
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
11.
POLYMER HYBRID MATERIAL FOR USE IN A SPLITTING METHOD
The invention relates to a polymer hybrid material, to a film comprising the polymer hybrid material, to the use of the polymer hybrid material, to a splitting method using the polymer hybrid material, and to a method for producing the polymer hybrid material. The aim of the invention is to provide the possibility of increasing the total yield, i.e. the efficiency with respect to the raw materials used and other resources such as energy and workforce, of a splitting method. According to the invention, this is provided by a polymer hybrid material for use in a splitting method, wherein at least two solid-body sections are produced from a solid-body starting material. The polymer hybrid material according to the invention comprises a polymer matrix and a first filler and a second filler embedded into the polymer matrix.
The present invention relates to a method for creating modifications in a solid body, wherein by means of the modifications a crack guiding region is provided for guiding a crack in order to detach a solid body portion, in particular a solid body layer, from the solid body. The method according to the invention comprises preferably at least the steps of: moving the solid body relative to a laser application device; successively producing a plurality of laser beams by means of the laser application device in order to create a respective at least one modification, wherein the laser application device is adjusted for defined focusing of the laser beams, continuously depending on a plurality of parameters, in particular at least two parameters.
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
13.
METHOD FOR MAKING A CRACK IN THE EDGE PORTION OF A DONOR SUBSTRATE, USING AN INCLINED LASER BEAM
The invention relates to a method for cutting solids wafers (1) off a donor substrate (2). The method comprises the following steps: providing a donor substrate (2), and producing at least one modification (10) in the interior of the donor substrate (2) by means of at least one laser beam (12), said laser beam (12) penetrating the donor substrate (2) via a flat surface (16) of the donor substrate (2). The laser beam (12) is inclined with respect to the flat surface (16) of the donor substrate (2) such that it penetrates the donor substrate at an angle of not equal to 0° or 180° relative to the longitudinal axis of the donor substrate. The laser beam (12) is focused in order to produce the modification (10) in the donor substrate (2) and the solids wafer (1) detaches itself from the donor substrate (2) as a result of the modifications (10) produced. Or a stress-inducing layer (14) is produced in or arranged on the flat surface (16) of the donor substrate (2) and mechanical stress is produced in the donor substrate (2) by exposing the stress-inducing layer (14) to heat. The mechanical stress produces a crack (20) for separating a solids layer (1), which crack propagates along the modifications (10).
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B28D 1/00 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
C03B 33/09 - Severing cooled glass by thermal shock
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
The present invention relates to a method for separating solid wafers (1) from a donor substrate (2). The method comprises the steps of: creating modifications (10) within the donor substrate (2) by means of laser beams (12), wherein the modifications (10) define a detachment region along which separation of the solid layer (1) from the donor substrate (2) takes place, and removing material of the donor substrate (2), starting from a surface (4) extending in the peripheral direction of the donor substrate (2), in the direction of the centre (Z) of the donor substrate (2), in particular for producing an encircling depression (6).
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B28D 1/00 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
C03B 33/09 - Severing cooled glass by thermal shock
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
The present invention relates to a method for producing a multi-component wafer, in particular a MEMS wafer. The method according to the invention comprises at least the following steps: providing a bonding wafer (2), wherein at least one surface portion (4) of the bonding wafer (2) is formed by an oxide film, providing a dispenser wafer (6), wherein the dispenser wafer (6) is thicker than the bonding wafer (2), bringing the dispenser wafer (6) into contact with the surface portion (4) of the bonding wafer (2) that is formed by the oxide film, forming a multilayer arrangement (8) by connecting the dispenser wafer (6) and the bonding wafer (2) in the region of the contact, producing modifications (18) in the interior of the dispenser wafer (6) for predefining a detachment region (11) for separating the multilayer arrangement (8) into a detaching part (14) and a connecting part (16), wherein the production of the modifications (18) takes place before the formation of the multilayer arrangement (8) or after the formation of the multilayer arrangement (8), separating the multilayer arrangement along the detachment region as a result of a weakening of the multilayer arrangement brought about by the production of a sufficient number of modifications or as a result of production of mechanical stresses in the multilayer arrangement, wherein the connecting part (16) remains on the bonding wafer (2) and wherein the split-off detachment part (14) has a greater thickness than the connecting part (16).
The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate (2) for removing a solid layer (4), in particular a wafer; producing modifications (12), in particular by means of laser beams (10), in the donor substrate (2) in order to specify a crack course; providing a carrier substrate (6) for holding the solid layer (4); bonding the carrier substrate (6) to the donor substrate (2) by means of a bonding layer (8), wherein the carrier substrate (6) is provided for increasing the mechanical strength of the solid layer (4) for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer (16) on the carrier substrate (6); thermally loading the stress-producing layer (16) in order to produce stresses in the donor substrate (2), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer (4) from the donor substrate (2) such that the solid layer (4) is removed together with the bonded carrier substrate (6).
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
17.
APPARATUS AND METHOD FOR CONTINUOUS TREATMENT OF A SOLID BODY BY MEANS OF LASER BEAM
The invention relates to an apparatus (1) for treating solid bodies (2). The apparatus according to the invention comprises at least one receiving device (4) having a receiving portion (6) for receiving the solid body (2) and a holding portion (10) for holding the receiving portion (6), wherein the receiving portion (6) can be continuously driven by means of a drive device, a laser device (14) for providing laser beams (16) to generate modifications (18) in the solid body (8) or on a surface (20) of the solid body (2), and an optical system (20) for guiding the laser beams (16), wherein the laser beams (16) can be deflected by means of the optical system (20) such that one or more solid bodies (2) can be impinged by the laser beams (16) at different positions.
The invention relates to a method for producing at least one solid layer and comprises at least the steps of: providing a carrier substrate (4) having a sacrificial layer (8) arranged thereon or arranging a sacrificial layer (8) on the provided carrier substrate (4), producing a useful layer (6) by way of chemical or physical gas phase deposition on the sacrificial layer (8) to form a multi-layer arrangement (2), removing the useful layer (6) as a result of a material weakening produced between the useful layer (6) and the carrier substrate (4), said material weakening being brought about by modifications (12) to the sacrificial layer (8) which were produced means of laser beams (10).
C23C 16/01 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. on substrates subsequently removed by etching
C04B 35/622 - Forming processesProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B32B 33/00 - Layered products characterised by particular properties or particular surface features, e.g. particular surface coatingsLayered products designed for particular purposes not covered by another single class
G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
A42B 3/04 - Parts, details or accessories of helmets
19.
SEPARATING DEVICE FOR THE CHIP-FREE CUTTING OF WAFERS OF DONOR SUBSTRATES
The present invention relates to a device (1) for separating at least one wafer from a donor substrate (2). The device (1) according to the invention comprises at least a housing (4) with a receiving space (6) for receiving at least one multi-layer arrangement (8) which consists of at least one donor substrate (2) and a receiving layer (10) arranged or generated thereon, and an application device (12) for the contactless application of the multi-layer arrangement (8) for generating crack-conducting stresses in the multi-layer arrangement (8).
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
The invention relates to a method for creating a detachment zone (2) in a solid (1) in order to detach a solid portion (12), especially a solid layer (12), from the solid (1), said solid portion (12) that is to be detached being thinner than the solid from which the solid portion (12) has been removed. The method according to the invention preferably comprises at least the steps of: providing a solid (1) which is to be processed and which is made of a chemical compound; providing a LASER light source; and subjecting the solid (1) to LASER radiation from the LASER light source so that the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) that is to be cut off; the LASER radiation controlling the temperature of a predefined portion of the solid (1) inside the solid (1) in a defined manner such that a detachment zone (2) or a plurality of partial detachment zones (25, 27, 28, 29) is formed; characterized in that the temperature produced by the laser beams in a predefined portion of the solid (1) is so high that the material forming the predefined portion is subject to modifications (9) in the form of a predetermined conversion of material.
The invention relates to a method for cutting off at least one portion (4), in particular a wafer, from a solid body (2). The method comprises at least the following steps: modifying the crystal lattice of the solid body (2) by means of a modifier (18), wherein a number of modifications (19) are produced to form a nonplanar, in particular convex, detachment region (8) in the interior of the solid body, wherein the modifications (19) are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion (4) and a defined further treatment of the portion (4), detaching the portion (4) from the solid body (2).
The invention relates to a method for creating a detachment area (2) in a solid (1), in particular for detaching the solid (1) along the separating region (2). Said solid portion (12) that is to be detached is thinner than the solid body (1) from which the solid portion (12) has been removed. According to the invention, said method preferably comprises at least the following steps: the crystal lattice of the solid (1) is modified by means of a modifying agent, in particular by means of at least one laser, in particular a pico- or femtosecond laser. The modifications, in particular the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) which is to be detached, several modifications (9) are created in the crystal lattice, said crystal lattice penetrates, following said modifications (9), in the areas surrounding the modifications (9), at least in one particular part.
The invention relates to a method for creating a detachment zone (2) in a solid (1) in order to detach a solid portion (12), especially a solid layer (12), from the solid (1), said solid portion (12) that is to be detached being thinner than the solid from which the solid portion (12) has been removed. According to the invention, the method comprises at least the steps of: providing a solid (1) which is to be processed and which is preferably made of a chemical compound; providing a LASER light source; subjecting the solid (1) to LASER radiation from the LASER light source so that the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) that is to be cut off; the LASER radiation is applied in a defined manner to a predefined portion of the solid (1) inside the solid (1) such that a detachment zone (2) or a plurality of partial detachment zones (25, 27, 28, 29) is formed; the method is characterized in that a number of modifications (9) is successively created in the crystal lattice by the applied laser radiation, and the crystal lattice fissures at least partially in the regions surrounding the modifications (9) as a result of the modifications (9), said fissures in the region of the modifications (9) predefining the detachment zone (2) or a plurality of partial detachment zones (25, 27, 28, 29).
The invention relates to a splitting method for splitting a solid feedstock into at least two solid sectional pieces, and the use of a material in such a splitting method. In order to increase the total yield of a splitting method, the use of a polymer hybrid material containing one or more fillers in a polymer matrix material is proposed. A corresponding splitting method comprises the steps of providing the solid feedstock having at least one exposed surface, applying a polymer hybrid material containing fillers in a polymer matrix onto at least one exposed surface of the solid feedstock so that a composite structure results, and applying a voltage field on the composite structure, such that the solid feedstock is cleft into at least two solid sectional pieces along a plane within the solid feedstock.
The present invention relates to a method for producing solid body layers. The claimed method comprises at least the following steps: providing a solid body (2) for separating at least one solid body layer (4), arranging a receiving layer (10) on the solid body for holding the solid body layer (4), said receiving layer being made of at least one polymer and an additional material, said receiving layer, in terms of volume, be made mainly of polymer, the additional material having a greater conductivity than the polymer, and the receiving layer (10) is subjected to thermal stress, in particular, mechanical stress, for generating voltages in the solid body (2), wherein a crack in the solid body (2) along a separation plane (8) expands due to the voltages, the solid layer (4) being separated from the solid body (2) due to the crack.
The present invention relates to a method for producing solid body layers. The claimed method comprises at least the following steps: providing a solid body (2) for separating at least one solid body layer (4), fixing the receiving layer (10) for holding the solid layer (4) to the solid body (2), said receiving layer having a plurality of holes for guiding a fluid and is fixed by means of a connecting layer to the solid body and the receiving layer (10) is subjected to thermal stress, in particular, mechanical stress, for generating voltages in the solid body (2), wherein a crack in the solid body (2) along a separation plane (8) expands due to the voltages, the solid layer (4) being separated from the solid body (2) due to the crack.
The present invention relates to a method for producing at least one three-dimensional solid layer (4), in particular for use as a wafer, and/or at least one three-dimensional solid (40). The method according to the invention preferably comprises the following steps: providing a workpiece (2) for detaching the solid layers (4) and/or the solids (40), wherein the workpiece (2) has at least one exposed surface, generating defects (34) within the workpiece (2), wherein the defects (34) define at least one crack-conducting layer (8), wherein the crack-conducting layer (8) describes at least one three-dimensional contour, applying or generating a receiving layer (10) on the exposed surface of the workpiece (2), thereby forming a composite structure, tempering the receiving layer to generate stresses within the workpiece (2), wherein the stresses give rise to crack propagation within the workpiece (2), wherein, as a result of the crack propagation, a three-dimensional solid layer (4) or a three-dimensional solid (40) is separated from the workpiece (2) along the crack-conducting layer (8), wherein a surface of the solid layer (4) or of the solid corresponds to the three-dimensional contour of the crack-conducting layer (8).
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
The invention relates to a method for producing at least one solid body layer (1). The method has at least the following steps: providing a support substrate (2) with a first exposed surface (4) and with a second exposed surface (6); producing a release layer (8) in the support substrate or on the first exposed surface (4) of the support substrate (2), said release layer (8) having an exposed surface (10); producing the first solid-body layer (1) on the exposed surface (10) of the release layer (8), the first solid-body layer (1) having a free surface (12) at a distance to the release layer (8); arranging or forming a receiving layer (14) on the second exposed surface (6) of the support substrate (2) or on the free surface (12) of the first solid-body layer (1); and generating stresses within the release layer (8), said stresses being generated by controlling the temperature of at least the receiving layer (14), wherein a crack spreads within the release layer (8) or in the boundary region (16) between the release layer (8) and the first solid-body layer (1) as a result of the stresses, the first solid-body layer (1) being detached from the previously produced multilayer arrangement by means of the crack.
The invention relates to a method for manufacturing solid state elements (40), in particular substrate elements for receiving electroconductive components. The method comprises at least the following steps: providing a solid state element (2) from which at least one solid state layer (4) is to be separated, generating a first group of defects by means of a laser (18), in order to create a first detachment plane (8), along which the solid state layer (4) is separated from the solid state element (2), generating a second group of defects by means of the laser (18) in order to create at least one second detachment plane (50), the first detachment plane (8) and the second detachment plane (8) being orthogonal to each other, detaching the solid state layer (4) from the solid state element (2) along the first detachment plane (8), as a result of the generation of stresses in the solid state element (2), and separating the solid state layer (4) along the second detachment plane (50) into the individual solid state elements (40).
The present invention relates to a method for producing solid layers. The method according to the invention comprises at least the steps of providing a solid body (2) for detaching at least one solid layer (4), creating defects by means of at least one radiation source, in particular a laser, in the internal structure of the solid body for predetermining a plane of detachment, along which the solid layer is detached from the solid body, and thermally treating a polymer layer (10), arranged on the solid body (2), for the creation, in particular mechanical creation, of stresses in the solid body (2), wherein the stresses cause a crack to spread in the solid body (2) along the plane of detachment (8), detaching the solid layer (4) from the solid body (2).
The invention relates to a method for producing solid-body layers. The production method comprises at least the following steps: providing a solid body (2) for splitting off a plurality of solid-body layers (4), introducing or producing defects in the solid body (2) in order to specify a first detachment plane (8), along which a first solid-body layer (4) is removed from the solid body (2), arranging a receiving layer (10) for retaining the solid-body layer (4) on the solid body (2), thermally loading the receiving layer (10) in order to produce, in particular mechanically, stresses in the solid body (2), wherein a crack propagates in the solid body (2) along the detachment plane (8) because of the stresses, which crack removes the first solid-body layer (4) from the solid body (2), then arranging a second receiving layer for retaining a further solid-body layer (5) on the solid body (2), which has been reduced by the first solid-body layer (4), introducing or producing defects in the solid body (2) in order to specify a second detachment plane (9), along which a second solid-body layer (5) is removed from the solid body (2), thermally loading the second receiving layer in order to produce, in particular mechanically, stresses in the solid body (2), wherein a crack propagates in the solid body (2) along the second detachment plane (9) because of the stresses, which crack removes the second solid-body layer (5) from the solid body (2).
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
The present invention relates to a method for producing solid layers. The method according to the invention preferably comprises the steps of: providing a solid body (2) for splitting off at least one solid layer (4), creating defects by means of at least one radiation source (18), in particular a laser, in the internal structure of the solid body for predetermining a crack-initiating point, starting from which the solid layer (4) is split off from the solid body (2), and/or creating defects by means of at least the radiation source (18), in particular a laser, in the internal structure of the solid body (2) for predetermining a cracking line, along which the solid layer (4) is split off from the solid body (2), arranging a receiving layer (10) for holding the solid layer (4) on the solid body (2), thermally treating the receiving layer (10) for the creation, in particular mechanical creation, of stresses in the solid body (2), wherein the stresses cause a crack to spread from the crack-initiating point and/or along the cracking line in the solid body (2), detaching the solid layer (4) from the solid body (2).
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
The invention relates to a method for producing solid-state layers (5), in particular for use as wafers. The method preferably comprises the following steps: providing a workpiece (4) for detaching the solid-state layers (5), said workpiece (4) having at least one exposed surface; creating and/or providing a carrier unit for receiving at least one solid-state layer (5), the carrier unit having a receiving layer (2) for holding the solid-state layer (5); applying the receiving layer (2) to the exposed surface of the workpiece (4) to form a composite structure; creating a fracture trigger point (44) by inducing a pre-defined local voltage in the edge region, in particular on the edge of the workpiece (4); and splitting the solid-state layer (5) from the workpiece (4) starting from the fracture trigger point (44).
The invention relates to a method for producing solid-state layers, in particular for use as wafers, having the following the steps: providing a workpiece (4) for detaching the solid-state layers, said workpiece (4) having at least one exposed surface; generating and/or providing a support unit for receiving at least one solid-state layer, said support unit being designed in a multilayered manner, wherein the support unit has a stabilizing layer (1), the stabilizing layer (1) is superimposed by a receiving layer (2) at least in some sections, said receiving layer (2) being designed to retain the solid-state layer, and the stabilizing layer (1) is designed in at least some sections so as to have an elastic modulus which is greater than the elastic modulus of the receiving layer (2); connecting the receiving layer (2) to the exposed surface of the workpiece (4) while forming a composite structure; and applying an inner and/or outer stress field to the composite structure such that the solid-state layer is detached from the workpiece (4) along a plane extending within the workpiece (4).
The invention relates to a method for rounding edges of solid wafers and addresses the problem of providing a method for rounding a peripheral edge of the wafer that is already present, for avoiding the creation of sharp edges after a process step in which the wafer is divided, and for minimising the effort involved in edge rounding in one working process. The problem is solved by generating at least one peripheral recess (7) on an outer surface of the cylindrical solid starting material (1) or on the lateral surfaces of the cuboid solid starting material (1) such that, at all its points, the recess is equally spaced to a base surface or top surface of the solid starting material (1).
The invention relates to a wafer, the starting material (4) of which is a material of low ductility, which has at least one exposed surface. At least one prefabricated application layer (1) having freely selectable material properties is applied to the exposed surface of the starting material (4), thus forming a composite structure. The composite structure is subjected to an inner and/or outer stress field such that along an inner plane, the starting material (4) is split, thus forming the wafer. The wafer is provided with relief-like surface structures at the resulting gap area having substantially predefinable patterns, which can be varied by way of the properties of the starting material.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
37.
METHOD FOR PRODUCING THIN PLATES FROM MATERIALS WITH LOW DUCTILITY BY MEANS OF TEMPERATURE-INDUCED MECHANICAL TENSION USING PREFABRICATED POLYMER FILMS
The invention describes a method for producing thin solid body layers or solid body plates (5), in particular for use as wafers, comprising the following steps: provision of an starting material (4) made of a material with low ductility which has at least one exposed surface, provision of at least one prefabricated application layer (1) that has freely selectable material properties, application of the prefabricated application layer (1) to the exposed surface of the original material (4) to form a composite structure, application of an internal or external voltage field to the composite structure such that the original material (4) is cleaved along an internal plane to form at least two thin solid body layers (5) or solid body plates.
It is disclosed a method of printing comprising the steps of: providing a solid state material having at least one exposed surface; applying an auxiliary layer to the exposed surface to form a composite structure, the auxiliary layer having a stress pattern; subjecting the composite structure to conditions facilitating fracture of the solid state material along a plane at a depth therein; and removing the auxiliary layer and, therewith, a layer of the solid state material terminating at the fracture depth, an exposed surface of the removed layer of solid state material having a surface topology corresponding to the stress pattern.
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
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