A method for producing a detachment region in a solid-state body includes: providing a solid body that consists of a chemical compound comprising a combination of elements from the 3rd, 4th and 5th main group and subgroup 12 of the Periodic Table of the Elements; providing a laser light source; and exposing the solid body to laser beams from the laser light source. The laser beams penetrate into the solid body via a main surface of the solid body and are applied in a defined manner on a predefined portion of the solid body within the solid body to form a detachment region. The application of the laser beams successively creates multiple modifications in a crystal lattice of the solid body which, as a result of the modifications, fissures in a subcritical manner at least in a portion in each case in regions that surround the modifications.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/40 - Removing material taking account of the properties of the material involved
B23K 26/402 - Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
2.
Method for separating wafers from donor substrates
A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 103/00 - Materials to be soldered, welded or cut
A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.
B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
B23K 26/40 - Removing material taking account of the properties of the material involved
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 23/00 - Details of semiconductor or other solid state devices
A method for separating a solid body includes: providing a first solid body having opposite first and second surfaces and a crystal lattice, and that is at least partially transparent to a laser beam emitted by a laser; modifying a portion of the crystal lattice by the laser beam, the laser beam penetrating through the first surface, the modified portion of the crystal lattice extending in a plane parallel to the first surface, as a result of the modification, subcritical cracks are formed arranged in a plane parallel to the first surface, a plurality of the subcritical cracks forming a detachment region in the first solid body, the plurality of the subcritical cracks passing at least in some sections through the modified portion of the crystal lattice; and separating the first solid body along the detachment region to form a wafer and a second solid body.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/38 - Removing material by boring or cutting
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01S 5/02 - Structural details or components not essential to laser action
A method for separating a solid-state layer from a solid-state material includes: moving the solid-state material relative to a laser processing system; successively emitting a plurality of laser beams from the laser processing system to the solid-state material to create modifications within the solid-state material; adjusting the laser processing system for defined focusing of the plurality of laser beams and/or for continuous adjustment of energy of the plurality of laser beams as a function of at least one parameter; and detaching the solid-state layer from the solid-state material in a region of the modifications.
A method for producing a detachment area in a solid body in described. The solid body has a crystal lattice and is at least partially transparent to laser beams emitted by a laser. The method includes: modifying the crystal lattice of the solid by a laser beam, wherein the laser beam penetrates through a main surface of a detachable solid portion of the solid body, wherein a plurality of modifications are produced in the crystal lattice, wherein the modification are formed in a plane parallel to the main surface and at a distance from one another, wherein as a result of the modifications, the crystal lattice cracks the regions surrounding the modifications sub-critically in at least the one portion, and wherein the subcritical cracks are arranged in a plane parallel to the main surface.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/38 - Removing material by boring or cutting
H01S 5/02 - Structural details or components not essential to laser action
A solid body is disclosed. The solid body includes: a detachment plane in an interior space of the solid body, the detachment plane including laser radiation-induced modifications; and a region including layers and/or components. A multi-component arrangement is also disclosed. The multi-component arrangement includes: a solid-body layer including more than 50% SiC and modifications or modification components generating pressure tensions in a region of a first surface, the modifications being amorphized components of the solid-body layer, the modifications being spaced closer to the first surface than to a second surface opposite the first surface, the first surface being essentially level; and a metal layer on the first surface of the solid-body layer.
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.
B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
B23K 26/40 - Removing material taking account of the properties of the material involved
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 23/00 - Details of semiconductor or other solid state devices
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
According to claim 1, the invention relates to a method for providing at least one solid-body layer (4). The solid-body layer (4) is separated from a solid body (1). The method according to the invention preferably has the steps of: producing a plurality of modifications (9) in the interior of the solid body (1) using laser beams in order to form a separation plane (8), compressive stresses being produced in the solid body (1) by the modifications (9); separating the solid-body layer (4) by separating the remaining solid body (1) and the solid-body layer (4) along the separation plane (8) formed by the modifications (9), wherein at least parts of the modifications (9) which produce the compressive stresses remain on the solid-body layer (4), and enough modifications (9) are produced that the solid-body layer (4) is separated from the solid body (1) on the basis of the modifications (9) or an external force is introduced into the solid body (1) in order to produce additional stresses in the solid body (1), said external force being so great that the stresses cause a crack to propagate along the separation plane (8) produced by the modifications; and producing a metal layer on the surface exposed by the separation of the solid-body layer (4) from the solid body (1) in order to at least partly, preferably greatly and particularly preferably completely, compensate for a deformation of the solid-body layer (4) produced by the compressive stresses of the remaining modification parts or at feast partly, preferably greatly or completely, compensate for the compressive stresses.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
A method for separating a solid-body layer from a donor substrate includes providing a donor substrate having a planar surface, a longitudinal axis orthogonal to the planar surface, and a peripheral surface, and producing modifications within the donor substrate using at least one LASER beam. The at least one LASER beam penetrates the donor substrate via the peripheral surface at an angle not equal to 90° relative to the longitudinal axis of the donor substrate. The method further includes producing a stress-inducing polymer layer on the planar surface of the donor substrate, and producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer. The mechanical stresses produce a crack for separating the solid-body layer, and wherein the crack propagates along the modifications.
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/40 - Removing material taking account of the properties of the material involved
C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
C30B 31/20 - Doping by irradiation with electromagnetic waves or by particle radiation
B23K 103/00 - Materials to be soldered, welded or cut
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
The invention relates to a method for producing modifications (9) in the interior of a solid body (1). The method comprises the introduction of laser radiation (14) of a laser (29) into the interior of the solid body (1) via a first surface (8) of the solid body (1). The solid body (1) forms a crystal structure. Modifications (9) are produced at predefined points in a production plane (4) in the interior of the solid body (1) by the laser radiation (14). The modifications (9) are closer to the first surface (8) than to a second surface, the second surface being parallel to the first surface (8). A plurality of linear forms (103) can be produced by the modifications (9). The solid body (1) cracks subcritically in the region of each modification (9). The subcritical cracks have an average crack length of less than 150 μm orthogonally to the direction of longitudinal extent of the linear form in question. Modifications (9) that belong to the same linear form (103) and that are produced one after the other are produced at a distance from each other that is defined by the function (d−x)/d<−0.31, where x>d.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/03 - Observing, e.g. monitoring, the workpiece
14.
Method for producing wafers with modification lines of defined orientation
The present invention therefore relates to a method for separating at least one solid body layer (2) from a donor substrate (1). According to the invention, the method preferably comprises at least the steps of: providing the donor substrate (1), wherein the donor substrate (1) has crystal lattice planes (6) which are inclined in relation to a planar main surface (8), wherein the main surface (8) delimits the donor substrate (1) in the longitudinal direction of the donor substrate (1) on one side, wherein a crystal lattice plane normal is inclined in relation to a main surface normal in a first direction, providing at least one laser, introducing laser radiation of the laser into the interior of the donor substrate (1) via the main surface (8) for changing the material properties of the donor substrate (1) in the region of at least one laser focus, wherein the laser focus is formed by laser beams of the laser which are emitted by the laser, wherein the change in the material property by changing the point of entry of the laser radiation into the donor substrate (1) forms a linear shape (103), wherein the changes in the material property are generated on at least one generating plane (4), wherein the crystal lattice planes (6) of the donor substrate (1) are oriented in an inclined manner in relation to the generating plane (4), wherein the linear design (103) is inclined in relation to a sectional line (10) which is produced at the interface between the generating plane (4) and the crystal lattice plane (6), wherein, owing to the changed material property, the donor substrate (1) tears in the form of subcritical cracks, separating the solid body layer (2) by introducing an external force into the donor substrate (1) for connecting the subcritical crack or so much material on the generating plane (4) being changed by means of the laser radiation that the solid body layer (2) becomes detached from the donor substrate (1) with connection of the subcritical crack.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B23K 26/40 - Removing material taking account of the properties of the material involved
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
C30B 31/20 - Doping by irradiation with electromagnetic waves or by particle radiation
C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
The invention relates to a method for creating a detachment zone (2) in a solid (1) in order to detach a solid portion (12), especially a solid layer (12), from the solid (1), said solid portion (12) that is to be detached being thinner than the solid from which the solid portion (12) has been removed. The method according to the invention preferably comprises at least the steps of: providing a solid (1) which is to be processed and which is made of a chemical compound; providing a LASER light source; and subjecting the solid (1) to LASER radiation from the LASER light source so that the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) that is to be cut off; the LASER radiation controlling the temperature of a predefined portion of the solid (1) inside the solid (1) in a defined manner such that a detachment zone (2) or a plurality of partial detachment zones (25, 27, 28, 29) is formed; characterized in that the temperature produced by the laser beams in a predefined portion of the solid (1) is so high that the material forming the predefined portion is subject to modifications (9) in the form of a predetermined conversion of material.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 103/00 - Materials to be soldered, welded or cut
16.
Production facility for separating wafers from donor substrates
The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4). According to the invention, the production facility comprises at least one analysis device (6) for determining at least one individual property, particularly the doping, of the respective donor substrate (4), a data device (10) for producing donor substrate process data for individual donor substrates (4), wherein the donor substrate process data comprise analysis data of the analysis device (6), and the analysis data describe at least the individual property of the donor substrate (4), a laser device (12) for producing modifications (14) inside the donor substrate (4) in order to form a region of detachment (16) inside the respective donor substrate (4), wherein the laser device (12) can be operated according to the donor substrate process data of a concrete donor substrate (4) for the machining of the concrete donor substrate (4), and a detachment device (18) for producing mechanical voltages inside the respective donor substrate (4) for triggering and/or guiding a crack for separating respectively at least one wafer (2) from a donor substrate (4).
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 103/00 - Materials to be soldered, welded or cut
17.
Device and method for applying pressure to stress-producing layers for improved guidance of a separation crack
The present invention relates to a method, according to claim 1, for separating at least one solid body layer (1), particularly a solid body disk, from a donor substrate (2). The method according to the invention comprises preferably at least the following steps: providing a donor substrate (2); producing or arranging a stress-producing layer (4) on a particularly flat surface (5) of the donor substrate (2) which axially defines the donor substrate (2); pressing at least one pressure application element (6) of a pressure application device (8) onto at least one pre-determined portion of the stress-producing layer (4), in order to press the stress-producing layer (4) onto the surface (5); separating the solid body layer (1) from the donor substrate (2) by thermally applying the stress-producing layer (4), thereby producing mechanical stress in the donor substrate (2), the mechanical stress creating a crack for separating a solid body layer (1), and the pressure application element (6) being pressed onto the stress-producing layer (4) during the thermal application of the stress-producing layer (4).
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/14 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor
B23K 26/146 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor the fluid stream containing a liquid
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and subjecting the polymer layer to temperature conditions to generate mechanical stress in the solid body, including cooling of the polymer layer to a temperature below ambient temperature, the cooling taking place such that due to stresses a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
B23K 26/40 - Removing material taking account of the properties of the material involved
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 23/00 - Details of semiconductor or other solid state devices
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
A method of splitting a semiconductor wafer includes: inducing a first stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a first radiation process; inducing a second stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a second radiation process, the second radiation process including applying laser energy to an edge of the semiconductor wafer; and splitting the semiconductor wafer after inducing the first stress distribution and the second stress distribution.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
20.
Method and device for the production of wafers with a pre-defined break initiation point
The present invention relates to a method for the production of layers of solid material, in particular for use as wafers. The method may include the following steps: providing a workpiece for the separation of the layers of solid material with the workpiece optionally having at least one exposed surface, producing and/or providing a carrier unit for receiving at least one layer of solid material having the carrier unit optionally having a receiving layer for holding the layer of solid material, attaching the receiving layer to the exposed surface of the workpiece forming a composite structure, producing a break initiation point by means of pre-defined local stress induction in the peripheral region, including at the edge, of the workpiece, and separating the layer of solid material from the workpiece starting from the break initiation point.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
21.
Method for thinning solid body layers provided with components
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
The invention relates to a method for creating a detachment zone (2) in a solid (1) in order to detach a solid portion (12), especially a solid layer (12), from the solid (1), said solid portion (12) that is to be detached being thinner than the solid from which the solid portion (12) has been removed. The method according to the invention preferably comprises at least the steps of: providing a solid (1) which is to be processed and which is made of a chemical compound; providing a LASER light source; and subjecting the solid (1) to LASER radiation from the LASER light source so that the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) that is to be cut off; the LASER radiation controlling the temperature of a predefined portion of the solid (1) inside the solid (1) in a defined manner such that a detachment zone (2) or a plurality of partial detachment zones (25, 27, 28, 29) is formed; characterized in that the temperature produced by the laser beams in a predefined portion of the solid (1) is so high that the material forming the predefined portion is subject to modifications (9) in the form of a predetermined conversion of material.
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 103/00 - Materials to be soldered, welded or cut
23.
Method for modifying substrates based on crystal lattice dislocation density
A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.
H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.
B23K 26/50 - Working by transmitting the laser beam through or within the workpiece
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
B23K 103/00 - Materials to be soldered, welded or cut
25.
Method and device for producing planar modifications in solid bodies
A method for creating modifications in a solid-state material is described, wherein a crack guidance region for guiding a crack for separating a solid-state layer from the solid-state material is predetermined by the modifications. The method includes: moving the solid-state material relative to a laser processing system; successively emitting a plurality of laser beams from the laser processing system to the solid-state material to create at least one modification within the solid-state material; and continuously adjusting the laser processing system for defined focusing of the plurality of laser beams and/or for adjustment of energy of the plurality of laser beams as a function of at least one parameter.
A method for producing microcracks in an interior of a composite structure includes: providing or producing the composite structure which has a solid body and at least one metallic coating and/or electrical components situated or provided on one side of the solid body, the solid body containing or being made of silicon carbide (SiC); and producing modifications in the interior of the solid body. Laser radiation is introduced into a flat surface of the solid body to cause multiphoton excitation which brings about plasma generation. The modifications are effected by the plasma in the form of a material transformation which generates compressive stresses in the solid body, thereby developing subcritical cracks in a surrounding area of a particular modification. The laser radiation is introduced into the solid body in pulses having an intensity which reaches a maximum within 10 ns after a start of a particular pulse.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
B23K 26/08 - Devices involving relative movement between laser beam and workpiece
B23K 103/00 - Materials to be soldered, welded or cut
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
27.
Laser conditioning of solid bodies using prior knowledge from previous machining steps
The present invention relates to a method for generating control data for the secondary machining of a solid body (1), in particular wafer, which is modified by means of laser beams (10). The interior of said solid body (1) has multiple modifications (12), said modifications (12) having been produced by means of laser beams (10). The method comprises the following steps: defining a criterion of analysis for analyzing the modifications (12) produced in the interior of the solid body (1); defining a threshold value with respect to the criterion of analysis, an analytical value on one side of the threshold value triggering a secondary machining registration; analyzing the wafer by means of an analytical unit (4), said analytical unit (4) analyzing the modifications (12) with respect to the criterion of analysis and outputting analytical values regarding the analyzed modifications, said analytical values lying above or below the threshold value; outputting location data with respect to the analyzed modifications, said location data containing information regarding in which region(s) of the solid body (1) the analytical value lie above or below the threshold value; and generating control data for controlling a laser treatment device (11) for the secondary machining of the solid body (1), said control data comprising at least the location data of the modifications (12) registered for secondary machining.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
B23K 26/03 - Observing, e.g. monitoring, the workpiece
B23K 26/04 - Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
G05B 19/18 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
B23K 103/00 - Materials to be soldered, welded or cut
A method for the production of layers of solid material is contemplated. The method may include the steps of providing a solid body for the separation of at least one layer of solid material, generating defects by means of at least one radiation source, in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, and applying heat to a polymer layer disposed on the solid body in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the layer of solid material from the solid body.
B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
B23K 26/40 - Removing material taking account of the properties of the material involved
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 23/00 - Details of semiconductor or other solid state devices
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
The present invention relates to a method for separating solid-body slices (1) from a donor substrate (2). The method comprises the steps of: producing modifications (10) within the donor substrate (2) by means of laser beams (12), wherein a detachment region is predefined by the modifications (10), along which detachment region the solid-body layer (1) is separated from the donor substrate (2), and removing material from the donor substrate (2), starting from a surface (4) extending in the peripheral direction of the donor substrate (2), in the direction of the centre (Z) of the donor substrate (2), in particular in order to produce a peripheral indentation (6).
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
C03B 33/09 - Severing cooled glass by thermal shock
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
A method for producing a solid body layer having a domed or curved shape at least in sections includes: irradiating a surface of the solid body by laser beams emitted from a laser application device to produce a modified region within the solid body that includes modifications having an extension in a longitudinal direction of the solid body, the longitudinal extension extending orthogonally to the irradiated solid body surface, wherein the modifications are configured to guide a crack for detaching the solid body layer upon application of an external force; and enlarging the extension of the modified region in the longitudinal direction to increase stress produced by the modified region in unmodified material of the solid body, wherein enlarging the extension of the modified region in the longitudinal direction increases the probability of spontaneous splitting of the solid body layer from the solid body without application of the external force.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
A polymer hybrid material, a film comprising the polymer hybrid material, the use of the polymer hybrid material, a splitting method using the polymer hybrid material, and a method for producing the polymer hybrid material are provided for increasing the total yield, i.e. the efficiency with respect to the raw materials used and other resources such as energy and workforce, of a splitting method. The polymer hybrid material for use in a splitting method has at least two solid-body sections produced from a solid-body starting material. The polymer hybrid material comprises a polymer matrix and a first filler and a second filler embedded into the polymer matrix.
The present invention relates to a method for the production of layers of solid material, in particular for use as wafers. The method may include the following steps: providing a workpiece for the separation of the layers of solid material with the workpiece optionally having at least one exposed surface, producing and/or providing a carrier unit for receiving at least one layer of solid material having the carrier unit optionally having a receiving layer for holding the layer of solid material, attaching the receiving layer to the exposed surface of the workpiece forming a composite structure, producing a break initiation point by means of pre-defined local stress induction in the peripheral region, including at the edge, of the workpiece, and separating the layer of solid material from the workpiece starting from the break initiation point.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
33.
Method for forming a crack in the edge region of a donor substrate, using an inclined laser beam
The invention relates to a method for separating solid-body slices (1) from a donor substrate (2). The method comprises the following steps: providing a donor substrate (2), producing at least one modification (10) within the donor substrate (2) by means of at least one LASER beam (12), wherein the LASER beam (12) penetrates the donor substrate (2) via a planar surface (16) of the donor substrate (2), wherein the LASER beam (12) is inclined with respect to the planar surface (16) of the donor substrate (2) such that it penetrates the donor substrate at an angle of not equal to 0° or 180° relative to the longitudinal axis of the donor substrate, wherein the LASER beam (12) is focused in order to produce the modification (10) in the donor substrate (2) and the solid-body slice (1) detaches from the donor substrate (2) as a result of the modifications (10) produced or a stress-inducing layer (14) is produced or arranged on the planar surface (16) of the donor substrate (2) and mechanical stresses are produced in the donor substrate (2) by a thermal treatment of the stress-inducing layer (14), wherein the mechanical stresses produce a crack (20) for separating a solid-body layer (1), which crack propagates along the modifications (10).
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
The invention relates to a method for creating a detachment zone in a solid in order to detach a solid portion, especially a solid layer, from the solid, said solid portion that is to be detached being thinner than the solid from which the solid portion has been removed. According to the invention, the method comprises at least the steps of: providing a solid which is to be processed and which is preferably made of a chemical compound; providing a LASER light source; subjecting the solid to LASER radiation from the LASER light source so that the laser beams penetrate into the solid via a surface of the solid portion that is to be cut off; the LASER radiation is applied in a defined manner to a predefined portion of the solid inside the solid such that a detachment zone or a plurality of partial detachment zones is formed; the method is characterized in that a number of modifications is successively created in the crystal lattice by the applied laser radiation, and the crystal lattice fissures at least partially in the regions surrounding the modifications as a result of the modification, said fissures in the region of the modifications predefining the detachment zone or a plurality of partial detachment zones.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 26/402 - Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
B23K 26/40 - Removing material taking account of the properties of the material involved
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B23K 103/00 - Materials to be soldered, welded or cut
35.
Method for the material-saving production of wafers and processing of wafers
The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate (2) for removing a solid layer (4), in particular a wafer; producing modifications (12), in particular by means of laser beams (10), in the donor substrate (2) in order to specify a crack course; providing a carrier substrate (6) for holding the solid layer (4); bonding the carrier substrate (6) to the donor substrate (2) by means of a bonding layer (8), wherein the carrier substrate (6) is provided for increasing the mechanical strength of the solid layer (4) for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer (16) on the carrier substrate (6); thermally loading the stress-producing layer (16) in order to produce stresses in the donor substrate (2), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer (4) from the donor substrate (2) such that the solid layer (4) is removed together with the bonded carrier substrate (6).
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
B28D 1/00 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
The present invention relates to a method for producing solid body layers. The claimed method comprises at least the following steps: providing a solid body (2) for separating at least one solid body layer (4), arranging a receiving layer (10) on the solid body for holding the solid body layer (4), said receiving layer being made of at least one polymer and an additional material, said receiving layer, in terms of volume, be made mainly of polymer, the additional material having a greater conductivity than the polymer, and the receiving layer (10) is subjected to thermal stress, in particular, mechanical stress, for generating voltages in the solid body (2), wherein a crack in the solid body (2) along a separation plane (8) expands due to the voltages, the solid layer (4) being separated from the solid body (2) due to the crack.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
37.
Splitting method and use of a material in a splitting method
The overall yield of a splitting method for division of a solid-state starting material into at least two solid-state pieces is increased by use of a polymer hybrid material comprising one or more fillers in a polymer matrix. A corresponding splitting method comprises the steps of providing the solid-state starting material with at least one exposed surface, applying a polymer hybrid material comprising fillers in a polymer matrix to at least one exposed surface of the solid-state starting material, so as to result in a composite structure, and subjecting the composite structure to a stress field such that the solid-state starting material is split along a plane within the solid-state starting material into at least two solid-state pieces.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
38.
Method for guiding a crack in the peripheral region of a donor substrate
The present invention relates to a method for separating solid-body slices (1) from a donor substrate (2). The method comprises the steps of: producing modifications (10) within the donor substrate (2) by means of laser beams (12), wherein a detachment region is predefined by the modifications (10), along which detachment region the solid-body layer (1) is separated from the donor substrate (2), and removing material from the donor substrate (2), starting from a surface (4) extending in the peripheral direction of the donor substrate (2), in the direction of the center (Z) of the donor substrate (2), in particular in order to produce a peripheral indentation (6).
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
C03B 33/09 - Severing cooled glass by thermal shock
B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
A method for creating a detachment zone in a solid includes: providing a solid which is to be processed; providing a laser light source; subjecting the solid to laser radiation from the laser light source so that laser beams penetrate into the solid via a surface of the solid portion that is to be cut off; applying the laser radiation in a defined manner to a predefined portion of the solid inside the solid such that a detachment zone or a plurality of partial detachment zones is formed; wherein a number of modifications are successively created in the crystal lattice by the applied laser radiation, and the crystal lattice fissures at least partially in the regions surrounding the modifications as a result of the modifications, the fissures in the region of the modifications predefining the detachment zone or the plurality of partial detachment zones.
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/40 - Removing material taking account of the properties of the material involved
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 26/402 - Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
B23K 103/00 - Materials to be soldered, welded or cut
40.
Nonplanar wafer and method for producing a nonplanar wafer
A method for cutting off at least one portion, in particular a wafer, from a solid body is contemplated. The method includes: modifying the crystal lattice of the solid body by means of a modifier, wherein a number of modifications are produced to form a nonplanar, in particular convex, detachment region in the interior of the solid body, wherein the modifications are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion and a defined further treatment of the portion, detaching the portion from the solid body.
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 103/00 - Materials to be soldered, welded or cut
B23K 26/40 - Removing material taking account of the properties of the material involved
A method for creating a detachment area in a solid, in particular for detaching the solid along the separating region. Said solid portion that is to be detached is thinner than the solid body from which the solid portion has been removed. Said method preferably comprises at least the following steps: the crystal lattice of the solid is modified by means of a modifying agent, in particular by means of at least one laser, in particular a pico- or femtosecond laser. The modifications, in particular the laser beams penetrate into the solid via a surface of the solid portion which is to be detached, several modifications are created in the crystal lattice, said crystal lattice penetrates, following said modifications, in the areas surrounding the modifications, at least in one particular part.
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/38 - Removing material by boring or cutting
H01S 5/02 - Structural details or components not essential to laser action
wherein a layer of solid material or a three-dimensional solid body is separated along the crack directing layer due to the crack propagation, wherein a surface of the layer of solid material or a surface of the solid body corresponds to the three-dimensional contour of the crack directing layer.
C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
A method for producing solid layers includes: providing a solid for separating at least one solid layer; fixing an accommodating layer for holding the solid layer on the solid, wherein the accommodating layer has a multiplicity of holes for conducting a liquid, wherein the accommodating layer is fixed on the solid by means of a connecting layer; and thermal loading of the accommodating layer for mechanical generation of stresses in the solid. A crack in the solid propagates along a detachment plane due to the stresses. The solid layer is separated from the solid by means of the crack. The accommodating layer includes at least one polymer material, and the polymer material undergoes a glass transition at a temperature lower than 0° C.
The invention relates to a method of producing at least one layer of solid material. This method comprises at the very least the steps of: providing a carrier substrate with a first exposed surface and with a second exposed surface; producing a detachment layer in the carrier substrate or over the first exposed surface of the carrier substrate, the detachment layer having an exposed surface; producing the first layer of solid material over the exposed surface of the detachment layer, the first layer of solid material having a free surface spaced apart from the detachment layer; positioning or forming a receiving layer on the second exposed surface of the carrier substrate or on the free surface of the first layer of solid material; generating stresses within the detachment layer, the stresses being generated by tempering at least the receiving layer, a crack propagating within the detachment layer or in the boundary region between the detachment layer and the first layer of solid material as a result of the stresses, the first layer of solid material being split off from the previously produced multi-layer arrangement by the crack.
B05D 3/00 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
C30B 1/02 - Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
A method for the production of layers of solid material is contemplated. The method may include the steps of providing a solid body for the separation of at least one layer of solid material, generating defects by means of at least one radiation source, in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, and applying heat to a polymer layer disposed on the solid body in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the layer of solid material from the solid body.
B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B23K 26/40 - Removing material taking account of the properties of the material involved
B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
H01L 23/00 - Details of semiconductor or other solid state devices
B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
A method for producing layers of solid material is contemplated. The production method may include the following:
Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.
B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
The invention relates to a method for the production of layers of solid material, in particular for use as wafers, comprising the following steps: providing a workpiece for the separation of layers of solid material, the workpiece having at least one exposed surface, producing and/or providing a carrier unit for receiving at least one layer of solid material, the carrier unit being made in a number of layers, the carrier unit having a stabilisation layer and the stabilisation layer being overlapped at least partially by a receiving layer, the receiving layer being made to hold the layer of solid material, and the stabilisation layer being formed, at least partially, such that it has an E modulus that is greater than the E modulus of the receiving layer, connecting the receiving layer to the exposed surface of the workpiece, thus forming a composite structure, exposing the composite structure to an inner and/or outer stress field such that the layer of solid material is separated along a plane of the workpiece extending within the workpiece.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
B32B 27/28 - Layered products essentially comprising synthetic resin comprising copolymers of synthetic resins not wholly covered by any one of the following subgroups
B32B 37/18 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of discrete sheets or panels only
B32B 38/10 - Removing layers, or parts of layers, mechanically or chemically
B32B 43/00 - Operations specially adapted for layered products and not otherwise provided for, e.g. repairingApparatus therefor
48.
Method for producing thin, free-standing layers of solid state materials with structured surfaces
A method of printing comprises the steps of: providing a solid state material having an exposed surface; applying an auxiliary layer to the exposed surface to form a composite structure, the auxiliary layer having a stress pattern; subjecting the composite structure to conditions facilitating fracture of the solid state material along a plane at a depth therein; and removing the auxiliary layer and, therewith, a layer of the solid state material terminating at the fracture depth, wherein an exposed surface of the removed layer of solid state material has a surface topology corresponding to the stress pattern.
patents
