Abstract

A method for producing a detachment region in a solid-state body includes: providing a solid body that consists of a chemical compound comprising a combination of elements from the 3rd, 4th and 5th main group and subgroup 12 of the Periodic Table of the Elements; providing a laser light source; and exposing the solid body to laser beams from the laser light source. The laser beams penetrate into the solid body via a main surface of the solid body and are applied in a defined manner on a predefined portion of the solid body within the solid body to form a detachment region. The application of the laser beams successively creates multiple modifications in a crystal lattice of the solid body which, as a result of the modifications, fissures in a subcritical manner at least in a portion in each case in regions that surround the modifications.

IPC Classes  ?

• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/40 - Removing material taking account of the properties of the material involved
• B23K 26/402 - Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.

IPC Classes  ?

• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• B23K 26/40 - Removing material taking account of the properties of the material involved
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
• H01L 23/00 - Details of semiconductor or other solid state devices

Abstract

A method for separating a solid body includes: providing a first solid body having opposite first and second surfaces and a crystal lattice, and that is at least partially transparent to a laser beam emitted by a laser; modifying a portion of the crystal lattice by the laser beam, the laser beam penetrating through the first surface, the modified portion of the crystal lattice extending in a plane parallel to the first surface, as a result of the modification, subcritical cracks are formed arranged in a plane parallel to the first surface, a plurality of the subcritical cracks forming a detachment region in the first solid body, the plurality of the subcritical cracks passing at least in some sections through the modified portion of the crystal lattice; and separating the first solid body along the detachment region to form a wafer and a second solid body.

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/38 - Removing material by boring or cutting
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• H01S 5/02 - Structural details or components not essential to laser action
• B23K 101/40 - Semiconductor devices
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

A method for separating a solid-state layer from a solid-state material includes: moving the solid-state material relative to a laser processing system; successively emitting a plurality of laser beams from the laser processing system to the solid-state material to create modifications within the solid-state material; adjusting the laser processing system for defined focusing of the plurality of laser beams and/or for continuous adjustment of energy of the plurality of laser beams as a function of at least one parameter; and detaching the solid-state layer from the solid-state material in a region of the modifications.

IPC Classes  ?

• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 26/36 - Removing material

Abstract

A method for producing a detachment area in a solid body in described. The solid body has a crystal lattice and is at least partially transparent to laser beams emitted by a laser. The method includes: modifying the crystal lattice of the solid by a laser beam, wherein the laser beam penetrates through a main surface of a detachable solid portion of the solid body, wherein a plurality of modifications are produced in the crystal lattice, wherein the modification are formed in a plane parallel to the main surface and at a distance from one another, wherein as a result of the modifications, the crystal lattice cracks the regions surrounding the modifications sub-critically in at least the one portion, and wherein the subcritical cracks are arranged in a plane parallel to the main surface.

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/38 - Removing material by boring or cutting
• H01S 5/02 - Structural details or components not essential to laser action
• B23K 101/40 - Semiconductor devices
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

A solid body is disclosed. The solid body includes: a detachment plane in an interior space of the solid body, the detachment plane including laser radiation-induced modifications; and a region including layers and/or components. A multi-component arrangement is also disclosed. The multi-component arrangement includes: a solid-body layer including more than 50% SiC and modifications or modification components generating pressure tensions in a region of a first surface, the modifications being amorphized components of the solid-body layer, the modifications being spaced closer to the first surface than to a second surface opposite the first surface, the first surface being essentially level; and a metal layer on the first surface of the solid-body layer.

IPC Classes  ?

• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• H01L 29/66 - Types of semiconductor device

Abstract

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and generating mechanical stress in the solid body such that a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

IPC Classes  ?

• H01L 21/76 - Making of isolation regions between components
• H01L 21/762 - Dielectric regions
• B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• B23K 26/40 - Removing material taking account of the properties of the material involved
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
• H01L 23/00 - Details of semiconductor or other solid state devices
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• C30B 33/06 - Joining of crystals
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

According to claim 1, the invention relates to a method for providing at least one solid-body layer (4). The solid-body layer (4) is separated from a solid body (1). The method according to the invention preferably has the steps of: producing a plurality of modifications (9) in the interior of the solid body (1) using laser beams in order to form a separation plane (8), compressive stresses being produced in the solid body (1) by the modifications (9); separating the solid-body layer (4) by separating the remaining solid body (1) and the solid-body layer (4) along the separation plane (8) formed by the modifications (9), wherein at least parts of the modifications (9) which produce the compressive stresses remain on the solid-body layer (4), and enough modifications (9) are produced that the solid-body layer (4) is separated from the solid body (1) on the basis of the modifications (9) or an external force is introduced into the solid body (1) in order to produce additional stresses in the solid body (1), said external force being so great that the stresses cause a crack to propagate along the separation plane (8) produced by the modifications; and producing a metal layer on the surface exposed by the separation of the solid-body layer (4) from the solid body (1) in order to at least partly, preferably greatly and particularly preferably completely, compensate for a deformation of the solid-body layer (4) produced by the compressive stresses of the remaining modification parts or at feast partly, preferably greatly or completely, compensate for the compressive stresses.

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• H01L 21/285 - Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
• H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• B23K 101/40 - Semiconductor devices

Abstract

A method for separating a solid-body layer from a donor substrate includes providing a donor substrate having a planar surface, a longitudinal axis orthogonal to the planar surface, and a peripheral surface, and producing modifications within the donor substrate using at least one LASER beam. The at least one LASER beam penetrates the donor substrate via the peripheral surface at an angle not equal to 90° relative to the longitudinal axis of the donor substrate. The method further includes producing a stress-inducing polymer layer on the planar surface of the donor substrate, and producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer. The mechanical stresses produce a crack for separating the solid-body layer, and wherein the crack propagates along the modifications.

IPC Classes  ?

• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 101/40 - Semiconductor devices
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
• C03B 33/09 - Severing cooled glass by thermal shock
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/762 - Dielectric regions
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/40 - Removing material taking account of the properties of the material involved
• C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
• C30B 31/20 - Doping by irradiation with electromagnetic waves or by particle radiation
• B23K 103/00 - Materials to be soldered, welded or cut
• C30B 29/36 - Carbides
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/872 - Schottky diodes
• B23K 101/40 - Semiconductor devices

Abstract

A method for treating a solid layer includes: providing a multi-layer assembly having a carrier substrate and a solid layer bonded to the carrier substrate by a bonding layer, the solid layer having an exposed surface including a defined surface structure, the defined surface structure resulting from a removal, which is effected by a crack, from a donor substrate, at least in sections; processing the solid layer, which is arranged on the carrier substrate; and separating the solid layer from the carrier substrate by a destruction of the bonding layer.

IPC Classes  ?

• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• H01L 21/762 - Dielectric regions
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• B23K 101/36 - Electric or electronic devices

Abstract

The invention relates to a method for producing modifications (9) in the interior of a solid body (1). The method comprises the introduction of laser radiation (14) of a laser (29) into the interior of the solid body (1) via a first surface (8) of the solid body (1). The solid body (1) forms a crystal structure. Modifications (9) are produced at predefined points in a production plane (4) in the interior of the solid body (1) by the laser radiation (14). The modifications (9) are closer to the first surface (8) than to a second surface, the second surface being parallel to the first surface (8). A plurality of linear forms (103) can be produced by the modifications (9). The solid body (1) cracks subcritically in the region of each modification (9). The subcritical cracks have an average crack length of less than 150 μm orthogonally to the direction of longitudinal extent of the linear form in question. Modifications (9) that belong to the same linear form (103) and that are produced one after the other are produced at a distance from each other that is defined by the function (d−x)/d<−0.31, where x>d.

IPC Classes  ?

• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/03 - Observing, e.g. monitoring, the workpiece

Abstract

The present invention therefore relates to a method for separating at least one solid body layer (2) from a donor substrate (1). According to the invention, the method preferably comprises at least the steps of: providing the donor substrate (1), wherein the donor substrate (1) has crystal lattice planes (6) which are inclined in relation to a planar main surface (8), wherein the main surface (8) delimits the donor substrate (1) in the longitudinal direction of the donor substrate (1) on one side, wherein a crystal lattice plane normal is inclined in relation to a main surface normal in a first direction, providing at least one laser, introducing laser radiation of the laser into the interior of the donor substrate (1) via the main surface (8) for changing the material properties of the donor substrate (1) in the region of at least one laser focus, wherein the laser focus is formed by laser beams of the laser which are emitted by the laser, wherein the change in the material property by changing the point of entry of the laser radiation into the donor substrate (1) forms a linear shape (103), wherein the changes in the material property are generated on at least one generating plane (4), wherein the crystal lattice planes (6) of the donor substrate (1) are oriented in an inclined manner in relation to the generating plane (4), wherein the linear design (103) is inclined in relation to a sectional line (10) which is produced at the interface between the generating plane (4) and the crystal lattice plane (6), wherein, owing to the changed material property, the donor substrate (1) tears in the form of subcritical cracks, separating the solid body layer (2) by introducing an external force into the donor substrate (1) for connecting the subcritical crack or so much material on the generating plane (4) being changed by means of the laser radiation that the solid body layer (2) becomes detached from the donor substrate (1) with connection of the subcritical crack.

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• B23K 26/40 - Removing material taking account of the properties of the material involved
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 101/40 - Semiconductor devices
• B23K 103/00 - Materials to be soldered, welded or cut
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• C30B 29/36 - Carbides
• C30B 31/20 - Doping by irradiation with electromagnetic waves or by particle radiation
• C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
• H01L 29/78 - Field-effect transistors with field effect produced by an insulated gate
• H01L 29/872 - Schottky diodes

Abstract

The invention relates to a method for creating a detachment zone (2) in a solid (1) in order to detach a solid portion (12), especially a solid layer (12), from the solid (1), said solid portion (12) that is to be detached being thinner than the solid from which the solid portion (12) has been removed. The method according to the invention preferably comprises at least the steps of: providing a solid (1) which is to be processed and which is made of a chemical compound; providing a LASER light source; and subjecting the solid (1) to LASER radiation from the LASER light source so that the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) that is to be cut off; the LASER radiation controlling the temperature of a predefined portion of the solid (1) inside the solid (1) in a defined manner such that a detachment zone (2) or a plurality of partial detachment zones (25, 27, 28, 29) is formed; characterized in that the temperature produced by the laser beams in a predefined portion of the solid (1) is so high that the material forming the predefined portion is subject to modifications (9) in the form of a predetermined conversion of material.

IPC Classes  ?

• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4). According to the invention, the production facility comprises at least one analysis device (6) for determining at least one individual property, particularly the doping, of the respective donor substrate (4), a data device (10) for producing donor substrate process data for individual donor substrates (4), wherein the donor substrate process data comprise analysis data of the analysis device (6), and the analysis data describe at least the individual property of the donor substrate (4), a laser device (12) for producing modifications (14) inside the donor substrate (4) in order to form a region of detachment (16) inside the respective donor substrate (4), wherein the laser device (12) can be operated according to the donor substrate process data of a concrete donor substrate (4) for the machining of the concrete donor substrate (4), and a detachment device (18) for producing mechanical voltages inside the respective donor substrate (4) for triggering and/or guiding a crack for separating respectively at least one wafer (2) from a donor substrate (4).

IPC Classes  ?

• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

The present invention relates to a method, according to claim 1, for separating at least one solid body layer (1), particularly a solid body disk, from a donor substrate (2). The method according to the invention comprises preferably at least the following steps: providing a donor substrate (2); producing or arranging a stress-producing layer (4) on a particularly flat surface (5) of the donor substrate (2) which axially defines the donor substrate (2); pressing at least one pressure application element (6) of a pressure application device (8) onto at least one pre-determined portion of the stress-producing layer (4), in order to press the stress-producing layer (4) onto the surface (5); separating the solid body layer (1) from the donor substrate (2) by thermally applying the stress-producing layer (4), thereby producing mechanical stress in the donor substrate (2), the mechanical stress creating a crack for separating a solid body layer (1), and the pressure application element (6) being pressed onto the stress-producing layer (4) during the thermal application of the stress-producing layer (4).

IPC Classes  ?

• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/14 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor
• B23K 26/146 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor the fluid stream containing a liquid
• B23K 26/70 - Auxiliary operations or equipment
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form

Abstract

A method for producing a layer of solid material includes: providing a solid body having opposing first and second surfaces, the second surface being part of the layer of solid material; generating defects by means of multiphoton excitation caused by at least one laser beam penetrating into the solid body via the second surface and acting in an inner structure of the solid body to generate a detachment plane, the detachment plane including regions with different concentrations of defects; providing a polymer layer on the solid body; and subjecting the polymer layer to temperature conditions to generate mechanical stress in the solid body, including cooling of the polymer layer to a temperature below ambient temperature, the cooling taking place such that due to stresses a crack propagates in the solid body along the detachment plane and the layer of solid material separates from the solid body along the crack.

IPC Classes  ?

• H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
• H01L 21/762 - Dielectric regions
• B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• B23K 26/40 - Removing material taking account of the properties of the material involved
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
• H01L 23/00 - Details of semiconductor or other solid state devices
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• C30B 33/06 - Joining of crystals
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

A method of splitting a semiconductor wafer includes: inducing a first stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a first radiation process; inducing a second stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a second radiation process, the second radiation process including applying laser energy to an edge of the semiconductor wafer; and splitting the semiconductor wafer after inducing the first stress distribution and the second stress distribution.

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

Abstract

The present invention relates to a method for the production of layers of solid material, in particular for use as wafers. The method may include the following steps: providing a workpiece for the separation of the layers of solid material with the workpiece optionally having at least one exposed surface, producing and/or providing a carrier unit for receiving at least one layer of solid material having the carrier unit optionally having a receiving layer for holding the layer of solid material, attaching the receiving layer to the exposed surface of the workpiece forming a composite structure, producing a break initiation point by means of pre-defined local stress induction in the peripheral region, including at the edge, of the workpiece, and separating the layer of solid material from the workpiece starting from the break initiation point.

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

wherein the modifications for forming the detachment plane (8) are created before producing the composite structure.

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 29/66 - Types of semiconductor device

Abstract

The invention relates to a method for creating a detachment zone (2) in a solid (1) in order to detach a solid portion (12), especially a solid layer (12), from the solid (1), said solid portion (12) that is to be detached being thinner than the solid from which the solid portion (12) has been removed. The method according to the invention preferably comprises at least the steps of: providing a solid (1) which is to be processed and which is made of a chemical compound; providing a LASER light source; and subjecting the solid (1) to LASER radiation from the LASER light source so that the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) that is to be cut off; the LASER radiation controlling the temperature of a predefined portion of the solid (1) inside the solid (1) in a defined manner such that a detachment zone (2) or a plurality of partial detachment zones (25, 27, 28, 29) is formed; characterized in that the temperature produced by the laser beams in a predefined portion of the solid (1) is so high that the material forming the predefined portion is subject to modifications (9) in the form of a predetermined conversion of material.

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.

IPC Classes  ?

• H01L 21/322 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to modify their internal properties, e.g. to produce internal imperfections
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• B23K 101/40 - Semiconductor devices

Abstract

Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• B23K 26/50 - Working by transmitting the laser beam through or within the workpiece
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• C30B 33/06 - Joining of crystals
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

A method for creating modifications in a solid-state material is described, wherein a crack guidance region for guiding a crack for separating a solid-state layer from the solid-state material is predetermined by the modifications. The method includes: moving the solid-state material relative to a laser processing system; successively emitting a plurality of laser beams from the laser processing system to the solid-state material to create at least one modification within the solid-state material; and continuously adjusting the laser processing system for defined focusing of the plurality of laser beams and/or for adjustment of energy of the plurality of laser beams as a function of at least one parameter.

IPC Classes  ?

• B23K 26/03 - Observing, e.g. monitoring, the workpiece
• B23K 26/36 - Removing material
• B23K 26/40 - Removing material taking account of the properties of the material involved
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 103/16 - Composite materials

Abstract

A method for producing microcracks in an interior of a composite structure includes: providing or producing the composite structure which has a solid body and at least one metallic coating and/or electrical components situated or provided on one side of the solid body, the solid body containing or being made of silicon carbide (SiC); and producing modifications in the interior of the solid body. Laser radiation is introduced into a flat surface of the solid body to cause multiphoton excitation which brings about plasma generation. The modifications are effected by the plasma in the form of a material transformation which generates compressive stresses in the solid body, thereby developing subcritical cracks in a surrounding area of a particular modification. The laser radiation is introduced into the solid body in pulses having an intensity which reaches a maximum within 10 ns after a start of a particular pulse.

IPC Classes  ?

• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/06 - Shaping the laser beam, e.g. by masks or multi-focusing
• B23K 26/08 - Devices involving relative movement between laser beam and workpiece
• B23K 103/00 - Materials to be soldered, welded or cut
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 29/16 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form

Abstract

The present invention relates to a method for generating control data for the secondary machining of a solid body (1), in particular wafer, which is modified by means of laser beams (10). The interior of said solid body (1) has multiple modifications (12), said modifications (12) having been produced by means of laser beams (10). The method comprises the following steps: defining a criterion of analysis for analyzing the modifications (12) produced in the interior of the solid body (1); defining a threshold value with respect to the criterion of analysis, an analytical value on one side of the threshold value triggering a secondary machining registration; analyzing the wafer by means of an analytical unit (4), said analytical unit (4) analyzing the modifications (12) with respect to the criterion of analysis and outputting analytical values regarding the analyzed modifications, said analytical values lying above or below the threshold value; outputting location data with respect to the analyzed modifications, said location data containing information regarding in which region(s) of the solid body (1) the analytical value lie above or below the threshold value; and generating control data for controlling a laser treatment device (11) for the secondary machining of the solid body (1), said control data comprising at least the location data of the modifications (12) registered for secondary machining.

IPC Classes  ?

• H01L 21/66 - Testing or measuring during manufacture or treatment
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• B23K 26/03 - Observing, e.g. monitoring, the workpiece
• B23K 26/04 - Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• G05B 19/18 - Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
• B23K 103/00 - Materials to be soldered, welded or cut
• B23K 101/40 - Semiconductor devices

Abstract

The invention relates to a method for producing modifications (9) in the interior of a solid body (1). The method comprises the introduction of laser radiation (14) of a laser (29) into the interior of the solid body (1) via a first surface (8) of the solid body (1). The solid body (1) forms a crystal structure. Modifications (9) are produced at predefined points in a production plane (4) in the interior of the solid body (1) by the laser radiation (14). The modifications (9) are closer to the first surface (8) than to a second surface, the second surface being parallel to the first surface (8). A plurality of linear forms (103) can be produced by the modifications (9). The solid body (1) cracks subcritically in the region of each modification (9). The subcritical cracks have an average crack length of less than 150 μm orthogonally to the direction of longitudinal extent of the linear form in question. Modifications (9) that belong to the same linear form (103) and that are produced one after the other are produced at a distance from each other that is defined by the function (d-x)/d<-0.31, where x>d.

IPC Classes  ?

• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• B23K 26/03 - Observing, e.g. monitoring, the workpiece
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks

Abstract

A method for the production of layers of solid material is contemplated. The method may include the steps of providing a solid body for the separation of at least one layer of solid material, generating defects by means of at least one radiation source, in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, and applying heat to a polymer layer disposed on the solid body in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the layer of solid material from the solid body.

IPC Classes  ?

• H01L 21/30 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/762 - Dielectric regions
• B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• B23K 26/40 - Removing material taking account of the properties of the material involved
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
• H01L 23/00 - Details of semiconductor or other solid state devices
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• C30B 33/06 - Joining of crystals
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

The present invention relates to a method for separating solid-body slices (1) from a donor substrate (2). The method comprises the steps of: producing modifications (10) within the donor substrate (2) by means of laser beams (12), wherein a detachment region is predefined by the modifications (10), along which detachment region the solid-body layer (1) is separated from the donor substrate (2), and removing material from the donor substrate (2), starting from a surface (4) extending in the peripheral direction of the donor substrate (2), in the direction of the centre (Z) of the donor substrate (2), in particular in order to produce a peripheral indentation (6).

IPC Classes  ?

• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• C03B 33/09 - Severing cooled glass by thermal shock
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
• B23K 26/70 - Auxiliary operations or equipment
• B23K 26/60 - Preliminary treatment
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B23K 101/40 - Semiconductor devices

Abstract

According to claim 1, the invention relates to a method for providing at least one solid-body layer (4). The solid-body layer (4) is separated from a solid body (1). The method according to the invention preferably has the steps of: producing a plurality of modifications (9) in the interior of the solid body (1) using laser beams in order to form a separation plane (8), compressive stresses being produced in the solid body (1) by the modifications (9); separating the solid-body layer (4) by separating the remaining solid body (1) and the solid-body layer (4) along the separation plane (8) formed by the modifications (9), wherein at least parts of the modifications (9) which produce the compressive stresses remain on the solid-body layer (4), and enough modifications (9) are produced that the solid-body layer (4) is separated from the solid body (1) on the basis of the modifications (9) or an external force is introduced into the solid body (1) in order to produce additional stresses in the solid body (1), said external force being so great that the stresses cause a crack to propagate along the separation plane (8) produced by the modifications; and producing a metal layer on the surface exposed by the separation of the solid-body layer (4) from the solid body (1) in order to at least partly, preferably greatly and particularly preferably completely, compensate for a deformation of the solid-body layer (4) produced by the compressive stresses of the remaining modification parts or at least partly, preferably greatly or completely, compensate for the compressive stresses.

IPC Classes  ?

• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks

Abstract

A method for producing a solid body layer having a domed or curved shape at least in sections includes: irradiating a surface of the solid body by laser beams emitted from a laser application device to produce a modified region within the solid body that includes modifications having an extension in a longitudinal direction of the solid body, the longitudinal extension extending orthogonally to the irradiated solid body surface, wherein the modifications are configured to guide a crack for detaching the solid body layer upon application of an external force; and enlarging the extension of the modified region in the longitudinal direction to increase stress produced by the modified region in unmodified material of the solid body, wherein enlarging the extension of the modified region in the longitudinal direction increases the probability of spontaneous splitting of the solid body layer from the solid body without application of the external force.

IPC Classes  ?

• B23K 26/38 - Removing material by boring or cutting
• B23K 26/40 - Removing material taking account of the properties of the material involved
• B23K 26/36 - Removing material
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/073 - Shaping the laser spot
• B23K 26/08 - Devices involving relative movement between laser beam and workpiece
• C03B 33/04 - Cutting or splitting in curves, especially for making spectacle lenses
• C03B 33/09 - Severing cooled glass by thermal shock

Abstract

A polymer hybrid material, a film comprising the polymer hybrid material, the use of the polymer hybrid material, a splitting method using the polymer hybrid material, and a method for producing the polymer hybrid material are provided for increasing the total yield, i.e. the efficiency with respect to the raw materials used and other resources such as energy and workforce, of a splitting method. The polymer hybrid material for use in a splitting method has at least two solid-body sections produced from a solid-body starting material. The polymer hybrid material comprises a polymer matrix and a first filler and a second filler embedded into the polymer matrix.

IPC Classes  ?

• C08K 3/08 - Metals
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• C08K 3/36 - Silica
• C08K 7/02 - Fibres or whiskers
• C08K 3/04 - Carbon
• C08J 5/18 - Manufacture of films or sheets
• C08L 83/04 - Polysiloxanes

Abstract

The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4). According to the invention, the production facility comprises at least one analysis device (6) for determining at least one individual property, particularly the doping, of the respective donor substrate (4), a data device (10) for producing donor substrate process data for individual donor substrates (4), wherein the donor substrate process data comprise analysis data of the analysis device (6), and the analysis data describe at least the individal property of the donor substrate (4), a laser device (12) for producing modifications (14) inside the donor substrate (4) in order to form a region of detachment (16) inside the respective donor substrate (4), wherein the laser device (12) can be operated according to the donor substrate process data of a concrete donor substrate (4) for the machining of the concrete donor substrate (4), and a detachment device (18) for producing mechanical voltages inside the respective donor substrate (4) for triggering and/or guiding a crack for separating respectively at least one wafer (2) from a donor substrate (4).

IPC Classes  ?

• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks

Abstract

The present invention relates to a method, according to claim 1, for separating at least one solid body layer (1), particularly a solid body disk, from a donor substrate (2). The method according to the invention comprises preferably at least the following steps: providing a donor substrate (2); producing or arranging a stress-producing layer (4) on a particularly flat surface (5) of the donor substrate (2) which axially defines the donor substrate (2); pressing at least one pressure application element (6) of a pressure application device (8) onto at least one pre-determined portion of the stress-producing layer (4), in order to press the stress-producing layer (4) onto the surface (5); separating the solid body layer (1) from the donor substrate (2) by thermally applying the stress-producing layer (4), thereby producing mechanical stress in the donor substrate (2), the mechanical stress creating a crack for separating a solid body layer (1), and the pressure application element (6) being pressed onto the stress-producing layer (4) during the thermal application of the stress-producing layer (4).

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 26/70 - Auxiliary operations or equipment
• B23K 26/14 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor
• B23K 26/146 - Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beamNozzles therefor the fluid stream containing a liquid
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

The present invention relates to a method for the production of layers of solid material, in particular for use as wafers. The method may include the following steps: providing a workpiece for the separation of the layers of solid material with the workpiece optionally having at least one exposed surface, producing and/or providing a carrier unit for receiving at least one layer of solid material having the carrier unit optionally having a receiving layer for holding the layer of solid material, attaching the receiving layer to the exposed surface of the workpiece forming a composite structure, producing a break initiation point by means of pre-defined local stress induction in the peripheral region, including at the edge, of the workpiece, and separating the layer of solid material from the workpiece starting from the break initiation point.

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

The invention relates to a method for separating solid-body slices (1) from a donor substrate (2). The method comprises the following steps: providing a donor substrate (2), producing at least one modification (10) within the donor substrate (2) by means of at least one LASER beam (12), wherein the LASER beam (12) penetrates the donor substrate (2) via a planar surface (16) of the donor substrate (2), wherein the LASER beam (12) is inclined with respect to the planar surface (16) of the donor substrate (2) such that it penetrates the donor substrate at an angle of not equal to 0° or 180° relative to the longitudinal axis of the donor substrate, wherein the LASER beam (12) is focused in order to produce the modification (10) in the donor substrate (2) and the solid-body slice (1) detaches from the donor substrate (2) as a result of the modifications (10) produced or a stress-inducing layer (14) is produced or arranged on the planar surface (16) of the donor substrate (2) and mechanical stresses are produced in the donor substrate (2) by a thermal treatment of the stress-inducing layer (14), wherein the mechanical stresses produce a crack (20) for separating a solid-body layer (1), which crack propagates along the modifications (10).

IPC Classes  ?

• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• H01L 21/762 - Dielectric regions
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• C03B 33/09 - Severing cooled glass by thermal shock
• B23K 101/40 - Semiconductor devices

Abstract

The present invention therefore relates to a method for separating at least one solid body layer (2) from a donor substrate (1). According to the invention, the method preferably comprises at least the steps of: providing the donor substrate (1), wherein the donor substrate (1) has crystal lattice planes (6) which are inclined in relation to a planar main surface (8), wherein the main surface (8) delimits the donor substrate (1) in the longitudinal direction of the donor substrate (1) on one side, wherein a crystal lattice plane normal is inclined in relation to a main surface normal in a first direction, providing at least one laser, introducing laser radiation of the laser into the interior of the donor substrate (1) via the main surface (8) for changing the material properties of the donor substrate (1) in the region of at least one laser focus, wherein the laser focus is formed by laser beams of the laser which are emitted by the laser, wherein the change in the material property by changing the point of entry of the laser radiation into the donor substrate (1) forms a linear shape (103), wherein the changes in the material property are generated on at least one generating plane (4), wherein the crystal lattice planes (6) of the donor substrate (1) are oriented in an inclined manner in relation to the generating plane (4), wherein the linear design (103) is inclined in relation to a sectional line (10) which is produced at the interface between the generating plane (4) and the crystal lattice plane (6), wherein, owing to the changed material property, the donor substrate (1) tears in the form of subcritical cracks, separating the solid body layer (2) by introducing an external force into the donor substrate (1) for connecting the subcritical crack or so much material on the generating plane (4) being changed by means of the laser radiation that the solid body layer (2) becomes detached from the donor substrate (1) with connection of the subcritical crack.

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

The invention relates to a method for creating a detachment zone in a solid in order to detach a solid portion, especially a solid layer, from the solid, said solid portion that is to be detached being thinner than the solid from which the solid portion has been removed. According to the invention, the method comprises at least the steps of: providing a solid which is to be processed and which is preferably made of a chemical compound; providing a LASER light source; subjecting the solid to LASER radiation from the LASER light source so that the laser beams penetrate into the solid via a surface of the solid portion that is to be cut off; the LASER radiation is applied in a defined manner to a predefined portion of the solid inside the solid such that a detachment zone or a plurality of partial detachment zones is formed; the method is characterized in that a number of modifications is successively created in the crystal lattice by the applied laser radiation, and the crystal lattice fissures at least partially in the regions surrounding the modifications as a result of the modification, said fissures in the region of the modifications predefining the detachment zone or a plurality of partial detachment zones.

IPC Classes  ?

• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B23K 26/402 - Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
• B23K 26/40 - Removing material taking account of the properties of the material involved
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate (2) for removing a solid layer (4), in particular a wafer; producing modifications (12), in particular by means of laser beams (10), in the donor substrate (2) in order to specify a crack course; providing a carrier substrate (6) for holding the solid layer (4); bonding the carrier substrate (6) to the donor substrate (2) by means of a bonding layer (8), wherein the carrier substrate (6) is provided for increasing the mechanical strength of the solid layer (4) for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer (16) on the carrier substrate (6); thermally loading the stress-producing layer (16) in order to produce stresses in the donor substrate (2), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer (4) from the donor substrate (2) such that the solid layer (4) is removed together with the bonded carrier substrate (6).

IPC Classes  ?

• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B28D 1/00 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor
• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• H01L 21/762 - Dielectric regions
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• B23K 101/36 - Electric or electronic devices

Abstract

The present invention relates to a method for producing solid body layers. The claimed method comprises at least the following steps: providing a solid body (2) for separating at least one solid body layer (4), arranging a receiving layer (10) on the solid body for holding the solid body layer (4), said receiving layer being made of at least one polymer and an additional material, said receiving layer, in terms of volume, be made mainly of polymer, the additional material having a greater conductivity than the polymer, and the receiving layer (10) is subjected to thermal stress, in particular, mechanical stress, for generating voltages in the solid body (2), wherein a crack in the solid body (2) along a separation plane (8) expands due to the voltages, the solid layer (4) being separated from the solid body (2) due to the crack.

IPC Classes  ?

• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/762 - Dielectric regions
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping

Abstract

The overall yield of a splitting method for division of a solid-state starting material into at least two solid-state pieces is increased by use of a polymer hybrid material comprising one or more fillers in a polymer matrix. A corresponding splitting method comprises the steps of providing the solid-state starting material with at least one exposed surface, applying a polymer hybrid material comprising fillers in a polymer matrix to at least one exposed surface of the solid-state starting material, so as to result in a composite structure, and subjecting the composite structure to a stress field such that the solid-state starting material is split along a plane within the solid-state starting material into at least two solid-state pieces.

IPC Classes  ?

• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• C08K 3/08 - Metals
• C08K 3/36 - Silica
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

The present invention relates to a method for separating solid-body slices (1) from a donor substrate (2). The method comprises the steps of: producing modifications (10) within the donor substrate (2) by means of laser beams (12), wherein a detachment region is predefined by the modifications (10), along which detachment region the solid-body layer (1) is separated from the donor substrate (2), and removing material from the donor substrate (2), starting from a surface (4) extending in the peripheral direction of the donor substrate (2), in the direction of the center (Z) of the donor substrate (2), in particular in order to produce a peripheral indentation (6).

IPC Classes  ?

• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• C03B 33/09 - Severing cooled glass by thermal shock
• B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
• B23K 26/70 - Auxiliary operations or equipment
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• B23K 26/60 - Preliminary treatment
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B23K 101/40 - Semiconductor devices

Abstract

The invention relates to a method for producing a solid body layer (4). Said method comprises at least the following steps: producing a plurality of modifications (9) by means of laser beams in the interior of a solid body (1) to form a detaching plane (8), introducing an external force into the solid body (1) to generate tensions in the solid body (1), wherein the external force is so strong that the tensions effect a crack propagation to separate the solid body layer from the solid body along the detaching plane (8), treating the surface of the solid body layer, which is exposed by the separating of the surface, in order to increase the strength of the interior structure of the solid body layer and/or to reduce the mechanical load taking effect on the inner structure of the solid body layer (4) during a machining process, and modifying the surface quality of the treated surface of the solid body layer (4) by means of polishing.

IPC Classes  ?

• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor

Abstract

The present invention relates to a method for separating at least one solid body layer (4) from at least one solid body (1). The method according to the invention includes the following steps: producing a plurality of modifications (9) by means of laser beams in the interior of the solid body (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid body (1), wherein the exposed surface (5) is a part of the solid body layer (4) to be separated; introducing an external force into the solid body (1) in order to create stresses in the solid body (1), wherein the external force is so strong that the stresses cause a crack propagation along the separation plane (8), and wherein the modifications to form the separation plane (8) are produced before producing the composite structure.

IPC Classes  ?

• B23K 26/36 - Removing material
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting

Abstract

A method for creating a detachment zone in a solid includes: providing a solid which is to be processed; providing a laser light source; subjecting the solid to laser radiation from the laser light source so that laser beams penetrate into the solid via a surface of the solid portion that is to be cut off; applying the laser radiation in a defined manner to a predefined portion of the solid inside the solid such that a detachment zone or a plurality of partial detachment zones is formed; wherein a number of modifications are successively created in the crystal lattice by the applied laser radiation, and the crystal lattice fissures at least partially in the regions surrounding the modifications as a result of the modifications, the fissures in the region of the modifications predefining the detachment zone or the plurality of partial detachment zones.

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/40 - Removing material taking account of the properties of the material involved
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B23K 26/402 - Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

The present invention relates to a method for generating control data for the secondary machining of a solid body (1), in particular wafer, which is modified by means of laser beams (10). The interior of said solid body (1) has multiple modifications (12), said modifications (12) having been produced by means of laser beams (10). The method comprises the following steps: defining a criterion of analysis for analyzing the modifications (12) produced in the interior of the solid body (1); defining a threshold value with respect to the criterion of analysis, an analytical value on one side of the threshold value triggering a secondary machining registration; analyzing the wafer by means of an analytical unit (4), said analytical unit (4) analyzing the modifications (12) with respect to the criterion of analysis and outputting analytical values regarding the analyzed modifications, said analytical values lying above or below the threshold value; outputting location data with respect to the analyzed modifications, said location data containing information regarding in which region/s of the solid body (1) the analytical value lies/lie above or below the threshold value; and generating control data for controlling a laser treatment device (11) for the secondary machining of the solid body (1), said control data comprising at least the location data of the modifications (12) registered for secondary machining.

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/03 - Observing, e.g. monitoring, the workpiece
• B23K 101/40 - Semiconductor devices
• B23K 103/00 - Materials to be soldered, welded or cut
• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• H01L 21/66 - Testing or measuring during manufacture or treatment

Abstract

A method for cutting off at least one portion, in particular a wafer, from a solid body is contemplated. The method includes: modifying the crystal lattice of the solid body by means of a modifier, wherein a number of modifications are produced to form a nonplanar, in particular convex, detachment region in the interior of the solid body, wherein the modifications are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion and a defined further treatment of the portion, detaching the portion from the solid body.

IPC Classes  ?

• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B23K 103/00 - Materials to be soldered, welded or cut
• B23K 26/40 - Removing material taking account of the properties of the material involved
• B23K 101/40 - Semiconductor devices

Abstract

A method for creating a detachment area in a solid, in particular for detaching the solid along the separating region. Said solid portion that is to be detached is thinner than the solid body from which the solid portion has been removed. Said method preferably comprises at least the following steps: the crystal lattice of the solid is modified by means of a modifying agent, in particular by means of at least one laser, in particular a pico- or femtosecond laser. The modifications, in particular the laser beams penetrate into the solid via a surface of the solid portion which is to be detached, several modifications are created in the crystal lattice, said crystal lattice penetrates, following said modifications, in the areas surrounding the modifications, at least in one particular part.

IPC Classes  ?

• H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/38 - Removing material by boring or cutting
• H01S 5/02 - Structural details or components not essential to laser action
• B23K 101/40 - Semiconductor devices
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

The invention relates to a method for detaching at least one solid body layer (14) from a solid body (1), wherein by means of the modifications (2) a crack guiding region (4) is provided for guiding a crack in order to detach a solid body portion (6), in particular a solid body layer, from the solid body (1). The invention preferably comprises at least the steps: moving the solid body (1) relative to a laser application device (8), successively producing laser beams (10) by means of the laser application device (8) in order to produce respectively at least one modification (2), wherein the laser application device (8) is adjusted for defined production of modifications depending on at least one parameter, in particular the transmission of the solid body at defined locations and for a defined solid body depth, wherein inhomogeneities of the solid body (1) in the region of the affected surface and/or in the region of the affected volume of the solid body (1) can be compensated for by the adjustment of the laser application device (8), detaching the solid body layer (14) from the solid body (1).

IPC Classes  ?

• B23K 26/36 - Removing material
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising

Abstract

The invention relates to a polymer hybrid material, to a film comprising the polymer hybrid material, to the use of the polymer hybrid material, to a splitting method using the polymer hybrid material, and to a method for producing the polymer hybrid material. The aim of the invention is to provide the possibility of increasing the total yield, i.e. the efficiency with respect to the raw materials used and other resources such as energy and workforce, of a splitting method. According to the invention, this is provided by a polymer hybrid material for use in a splitting method, wherein at least two solid-body sections are produced from a solid-body starting material. The polymer hybrid material according to the invention comprises a polymer matrix and a first filler and a second filler embedded into the polymer matrix.

IPC Classes  ?

• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• C09J 183/02 - Polysilicates
• H01L 21/56 - Encapsulations, e.g. encapsulating layers, coatings
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• C08K 3/08 - Metals

Abstract

wherein a layer of solid material or a three-dimensional solid body is separated along the crack directing layer due to the crack propagation, wherein a surface of the layer of solid material or a surface of the solid body corresponds to the three-dimensional contour of the crack directing layer.

IPC Classes  ?

• H01L 21/30 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/762 - Dielectric regions
• C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• B23K 101/40 - Semiconductor devices
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

A method for producing solid layers includes: providing a solid for separating at least one solid layer; fixing an accommodating layer for holding the solid layer on the solid, wherein the accommodating layer has a multiplicity of holes for conducting a liquid, wherein the accommodating layer is fixed on the solid by means of a connecting layer; and thermal loading of the accommodating layer for mechanical generation of stresses in the solid. A crack in the solid propagates along a detachment plane due to the stresses. The solid layer is separated from the solid by means of the crack. The accommodating layer includes at least one polymer material, and the polymer material undergoes a glass transition at a temperature lower than 0° C.

IPC Classes  ?

• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The present invention relates to a method for creating modifications in a solid body, wherein by means of the modifications a crack guiding region is provided for guiding a crack in order to detach a solid body portion, in particular a solid body layer, from the solid body. The method according to the invention comprises preferably at least the steps of: moving the solid body relative to a laser application device; successively producing a plurality of laser beams by means of the laser application device in order to create a respective at least one modification, wherein the laser application device is adjusted for defined focusing of the laser beams, continuously depending on a plurality of parameters, in particular at least two parameters.

IPC Classes  ?

• B23K 26/36 - Removing material
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising

Abstract

The invention relates to a method of producing at least one layer of solid material. This method comprises at the very least the steps of: providing a carrier substrate with a first exposed surface and with a second exposed surface; producing a detachment layer in the carrier substrate or over the first exposed surface of the carrier substrate, the detachment layer having an exposed surface; producing the first layer of solid material over the exposed surface of the detachment layer, the first layer of solid material having a free surface spaced apart from the detachment layer; positioning or forming a receiving layer on the second exposed surface of the carrier substrate or on the free surface of the first layer of solid material; generating stresses within the detachment layer, the stresses being generated by tempering at least the receiving layer, a crack propagating within the detachment layer or in the boundary region between the detachment layer and the first layer of solid material as a result of the stresses, the first layer of solid material being split off from the previously produced multi-layer arrangement by the crack.

IPC Classes  ?

• B05D 3/00 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• C30B 1/02 - Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
• C30B 29/40 - AIIIBV compounds
• C30B 33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
• H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
• H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The invention relates to a method for cutting solids wafers (1) off a donor substrate (2). The method comprises the following steps: providing a donor substrate (2), and producing at least one modification (10) in the interior of the donor substrate (2) by means of at least one laser beam (12), said laser beam (12) penetrating the donor substrate (2) via a flat surface (16) of the donor substrate (2). The laser beam (12) is inclined with respect to the flat surface (16) of the donor substrate (2) such that it penetrates the donor substrate at an angle of not equal to 0° or 180° relative to the longitudinal axis of the donor substrate. The laser beam (12) is focused in order to produce the modification (10) in the donor substrate (2) and the solids wafer (1) detaches itself from the donor substrate (2) as a result of the modifications (10) produced. Or a stress-inducing layer (14) is produced in or arranged on the flat surface (16) of the donor substrate (2) and mechanical stress is produced in the donor substrate (2) by exposing the stress-inducing layer (14) to heat. The mechanical stress produces a crack (20) for separating a solids layer (1), which crack propagates along the modifications (10).

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 1/00 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
• C03B 33/09 - Severing cooled glass by thermal shock
• C03B 33/095 - Tubes, rods or hollow products
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 101/40 - Semiconductor devices

Abstract

The present invention relates to a method for separating solid wafers (1) from a donor substrate (2). The method comprises the steps of: creating modifications (10) within the donor substrate (2) by means of laser beams (12), wherein the modifications (10) define a detachment region along which separation of the solid layer (1) from the donor substrate (2) takes place, and removing material of the donor substrate (2), starting from a surface (4) extending in the peripheral direction of the donor substrate (2), in the direction of the centre (Z) of the donor substrate (2), in particular for producing an encircling depression (6).

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 1/00 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• C03B 33/02 - Cutting or splitting sheet glassApparatus or machines therefor
• C03B 33/09 - Severing cooled glass by thermal shock
• C03B 33/095 - Tubes, rods or hollow products
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
• B23K 26/70 - Auxiliary operations or equipment
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• B23K 26/60 - Preliminary treatment
• B23K 101/40 - Semiconductor devices

Abstract

The present invention relates to a method for producing a multi-component wafer, in particular a MEMS wafer. The method according to the invention comprises at least the following steps: providing a bonding wafer (2), wherein at least one surface portion (4) of the bonding wafer (2) is formed by an oxide film, providing a dispenser wafer (6), wherein the dispenser wafer (6) is thicker than the bonding wafer (2), bringing the dispenser wafer (6) into contact with the surface portion (4) of the bonding wafer (2) that is formed by the oxide film, forming a multilayer arrangement (8) by connecting the dispenser wafer (6) and the bonding wafer (2) in the region of the contact, producing modifications (18) in the interior of the dispenser wafer (6) for predefining a detachment region (11) for separating the multilayer arrangement (8) into a detaching part (14) and a connecting part (16), wherein the production of the modifications (18) takes place before the formation of the multilayer arrangement (8) or after the formation of the multilayer arrangement (8), separating the multilayer arrangement along the detachment region as a result of a weakening of the multilayer arrangement brought about by the production of a sufficient number of modifications or as a result of production of mechanical stresses in the multilayer arrangement, wherein the connecting part (16) remains on the bonding wafer (2) and wherein the split-off detachment part (14) has a greater thickness than the connecting part (16).

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate

Abstract

The invention relates to a method for producing a multi-layer assembly. The method according to the invention comprises at least the following steps: providing a donor substrate (2) for removing a solid layer (4), in particular a wafer; producing modifications (12), in particular by means of laser beams (10), in the donor substrate (2) in order to specify a crack course; providing a carrier substrate (6) for holding the solid layer (4); bonding the carrier substrate (6) to the donor substrate (2) by means of a bonding layer (8), wherein the carrier substrate (6) is provided for increasing the mechanical strength of the solid layer (4) for the further processing, which solid layer is to be removed; arranging or producing a stress-producing layer (16) on the carrier substrate (6); thermally loading the stress-producing layer (16) in order to produce stresses in the donor substrate (2), wherein a crack is triggered by the stress production, which crack propagates along the specified crack course in order to remove the solid layer (4) from the donor substrate (2) such that the solid layer (4) is removed together with the bonded carrier substrate (6).

IPC Classes  ?

• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate

Abstract

The invention relates to an apparatus (1) for treating solid bodies (2). The apparatus according to the invention comprises at least one receiving device (4) having a receiving portion (6) for receiving the solid body (2) and a holding portion (10) for holding the receiving portion (6), wherein the receiving portion (6) can be continuously driven by means of a drive device, a laser device (14) for providing laser beams (16) to generate modifications (18) in the solid body (8) or on a surface (20) of the solid body (2), and an optical system (20) for guiding the laser beams (16), wherein the laser beams (16) can be deflected by means of the optical system (20) such that one or more solid bodies (2) can be impinged by the laser beams (16) at different positions.

IPC Classes  ?

• B23K 26/082 - Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/08 - Devices involving relative movement between laser beam and workpiece

Abstract

A method for the production of layers of solid material is contemplated. The method may include the steps of providing a solid body for the separation of at least one layer of solid material, generating defects by means of at least one radiation source, in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, and applying heat to a polymer layer disposed on the solid body in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the layer of solid material from the solid body.

IPC Classes  ?

• H01L 21/30 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups
• H01L 21/762 - Dielectric regions
• B23K 26/359 - Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B23K 26/40 - Removing material taking account of the properties of the material involved
• B23K 26/0622 - Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
• H01L 23/544 - Marks applied to semiconductor devices, e.g. registration marks, test patterns
• H01L 23/00 - Details of semiconductor or other solid state devices
• B23K 26/53 - Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• C30B 33/06 - Joining of crystals
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

A method for producing layers of solid material is contemplated. The production method may include the following: Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• C30B 33/06 - Joining of crystals
• B23K 103/00 - Materials to be soldered, welded or cut

Abstract

The invention relates to a method for producing at least one solid layer and comprises at least the steps of: providing a carrier substrate (4) having a sacrificial layer (8) arranged thereon or arranging a sacrificial layer (8) on the provided carrier substrate (4), producing a useful layer (6) by way of chemical or physical gas phase deposition on the sacrificial layer (8) to form a multi-layer arrangement (2), removing the useful layer (6) as a result of a material weakening produced between the useful layer (6) and the carrier substrate (4), said material weakening being brought about by modifications (12) to the sacrificial layer (8) which were produced means of laser beams (10).

IPC Classes  ?

• C23C 14/00 - Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
• C23C 14/08 - Oxides
• C23C 16/01 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. on substrates subsequently removed by etching
• C04B 35/622 - Forming processesProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B32B 33/00 - Layered products characterised by particular properties or particular surface features, e.g. particular surface coatingsLayered products designed for particular purposes not covered by another single class
• G06K 9/00 - Methods or arrangements for reading or recognising printed or written characters or for recognising patterns, e.g. fingerprints
• A42B 3/04 - Parts, details or accessories of helmets

Abstract

The present invention relates to a device (1) for separating at least one wafer from a donor substrate (2). The device (1) according to the invention comprises at least a housing (4) with a receiving space (6) for receiving at least one multi-layer arrangement (8) which consists of at least one donor substrate (2) and a receiving layer (10) arranged or generated thereon, and an application device (12) for the contactless application of the multi-layer arrangement (8) for generating crack-conducting stresses in the multi-layer arrangement (8).

IPC Classes  ?

• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• H01L 21/84 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

The invention relates to a method for creating a detachment zone (2) in a solid (1) in order to detach a solid portion (12), especially a solid layer (12), from the solid (1), said solid portion (12) that is to be detached being thinner than the solid from which the solid portion (12) has been removed. The method according to the invention preferably comprises at least the steps of: providing a solid (1) which is to be processed and which is made of a chemical compound; providing a LASER light source; and subjecting the solid (1) to LASER radiation from the LASER light source so that the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) that is to be cut off; the LASER radiation controlling the temperature of a predefined portion of the solid (1) inside the solid (1) in a defined manner such that a detachment zone (2) or a plurality of partial detachment zones (25, 27, 28, 29) is formed; characterized in that the temperature produced by the laser beams in a predefined portion of the solid (1) is so high that the material forming the predefined portion is subject to modifications (9) in the form of a predetermined conversion of material.

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/402 - Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators

Abstract

The invention relates to a method for cutting off at least one portion (4), in particular a wafer, from a solid body (2). The method comprises at least the following steps: modifying the crystal lattice of the solid body (2) by means of a modifier (18), wherein a number of modifications (19) are produced to form a nonplanar, in particular convex, detachment region (8) in the interior of the solid body, wherein the modifications (19) are produced in accordance with predetermined parameters, wherein the predetermined parameters describe a relationship between a deformation of the portion (4) and a defined further treatment of the portion (4), detaching the portion (4) from the solid body (2).

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor

Abstract

The invention relates to a method for creating a detachment area (2) in a solid (1), in particular for detaching the solid (1) along the separating region (2). Said solid portion (12) that is to be detached is thinner than the solid body (1) from which the solid portion (12) has been removed. According to the invention, said method preferably comprises at least the following steps: the crystal lattice of the solid (1) is modified by means of a modifying agent, in particular by means of at least one laser, in particular a pico- or femtosecond laser. The modifications, in particular the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) which is to be detached, several modifications (9) are created in the crystal lattice, said crystal lattice penetrates, following said modifications (9), in the areas surrounding the modifications (9), at least in one particular part.

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/402 - Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators

Abstract

The invention relates to a method for creating a detachment zone (2) in a solid (1) in order to detach a solid portion (12), especially a solid layer (12), from the solid (1), said solid portion (12) that is to be detached being thinner than the solid from which the solid portion (12) has been removed. According to the invention, the method comprises at least the steps of: providing a solid (1) which is to be processed and which is preferably made of a chemical compound; providing a LASER light source; subjecting the solid (1) to LASER radiation from the LASER light source so that the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) that is to be cut off; the LASER radiation is applied in a defined manner to a predefined portion of the solid (1) inside the solid (1) such that a detachment zone (2) or a plurality of partial detachment zones (25, 27, 28, 29) is formed; the method is characterized in that a number of modifications (9) is successively created in the crystal lattice by the applied laser radiation, and the crystal lattice fissures at least partially in the regions surrounding the modifications (9) as a result of the modifications (9), said fissures in the region of the modifications (9) predefining the detachment zone (2) or a plurality of partial detachment zones (25, 27, 28, 29).

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B23K 26/402 - Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators

Abstract

The invention relates to a splitting method for splitting a solid feedstock into at least two solid sectional pieces, and the use of a material in such a splitting method. In order to increase the total yield of a splitting method, the use of a polymer hybrid material containing one or more fillers in a polymer matrix material is proposed. A corresponding splitting method comprises the steps of providing the solid feedstock having at least one exposed surface, applying a polymer hybrid material containing fillers in a polymer matrix onto at least one exposed surface of the solid feedstock so that a composite structure results, and applying a voltage field on the composite structure, such that the solid feedstock is cleft into at least two solid sectional pieces along a plane within the solid feedstock.

IPC Classes  ?

• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The present invention relates to a method for producing solid body layers. The claimed method comprises at least the following steps: providing a solid body (2) for separating at least one solid body layer (4), arranging a receiving layer (10) on the solid body for holding the solid body layer (4), said receiving layer being made of at least one polymer and an additional material, said receiving layer, in terms of volume, be made mainly of polymer, the additional material having a greater conductivity than the polymer, and the receiving layer (10) is subjected to thermal stress, in particular, mechanical stress, for generating voltages in the solid body (2), wherein a crack in the solid body (2) along a separation plane (8) expands due to the voltages, the solid layer (4) being separated from the solid body (2) due to the crack.

IPC Classes  ?

• H01L 21/762 - Dielectric regions
• H01L 21/3105 - After-treatment

Abstract

The present invention relates to a method for producing solid body layers. The claimed method comprises at least the following steps: providing a solid body (2) for separating at least one solid body layer (4), fixing the receiving layer (10) for holding the solid layer (4) to the solid body (2), said receiving layer having a plurality of holes for guiding a fluid and is fixed by means of a connecting layer to the solid body and the receiving layer (10) is subjected to thermal stress, in particular, mechanical stress, for generating voltages in the solid body (2), wherein a crack in the solid body (2) along a separation plane (8) expands due to the voltages, the solid layer (4) being separated from the solid body (2) due to the crack.

IPC Classes  ?

• H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth

Abstract

The invention relates to a method for the production of layers of solid material, in particular for use as wafers, comprising the following steps: providing a workpiece for the separation of layers of solid material, the workpiece having at least one exposed surface, producing and/or providing a carrier unit for receiving at least one layer of solid material, the carrier unit being made in a number of layers, the carrier unit having a stabilisation layer and the stabilisation layer being overlapped at least partially by a receiving layer, the receiving layer being made to hold the layer of solid material, and the stabilisation layer being formed, at least partially, such that it has an E modulus that is greater than the E modulus of the receiving layer, connecting the receiving layer to the exposed surface of the workpiece, thus forming a composite structure, exposing the composite structure to an inner and/or outer stress field such that the layer of solid material is separated along a plane of the workpiece extending within the workpiece.

IPC Classes  ?

• H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
• H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• B32B 15/08 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin
• B32B 27/28 - Layered products essentially comprising synthetic resin comprising copolymers of synthetic resins not wholly covered by any one of the following subgroups
• B32B 37/18 - Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of discrete sheets or panels only
• B32B 38/10 - Removing layers, or parts of layers, mechanically or chemically
• B32B 43/00 - Operations specially adapted for layered products and not otherwise provided for, e.g. repairingApparatus therefor

Abstract

The present invention relates to a method for producing at least one three-dimensional solid layer (4), in particular for use as a wafer, and/or at least one three-dimensional solid (40). The method according to the invention preferably comprises the following steps: providing a workpiece (2) for detaching the solid layers (4) and/or the solids (40), wherein the workpiece (2) has at least one exposed surface, generating defects (34) within the workpiece (2), wherein the defects (34) define at least one crack-conducting layer (8), wherein the crack-conducting layer (8) describes at least one three-dimensional contour, applying or generating a receiving layer (10) on the exposed surface of the workpiece (2), thereby forming a composite structure, tempering the receiving layer to generate stresses within the workpiece (2), wherein the stresses give rise to crack propagation within the workpiece (2), wherein, as a result of the crack propagation, a three-dimensional solid layer (4) or a three-dimensional solid (40) is separated from the workpiece (2) along the crack-conducting layer (8), wherein a surface of the solid layer (4) or of the solid corresponds to the three-dimensional contour of the crack-conducting layer (8).

IPC Classes  ?

• C30B 33/06 - Joining of crystals
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• H01L 21/762 - Dielectric regions

Abstract

The invention relates to a method for producing at least one solid body layer (1). The method has at least the following steps: providing a support substrate (2) with a first exposed surface (4) and with a second exposed surface (6); producing a release layer (8) in the support substrate or on the first exposed surface (4) of the support substrate (2), said release layer (8) having an exposed surface (10); producing the first solid-body layer (1) on the exposed surface (10) of the release layer (8), the first solid-body layer (1) having a free surface (12) at a distance to the release layer (8); arranging or forming a receiving layer (14) on the second exposed surface (6) of the support substrate (2) or on the free surface (12) of the first solid-body layer (1); and generating stresses within the release layer (8), said stresses being generated by controlling the temperature of at least the receiving layer (14), wherein a crack spreads within the release layer (8) or in the boundary region (16) between the release layer (8) and the first solid-body layer (1) as a result of the stresses, the first solid-body layer (1) being detached from the previously produced multilayer arrangement by means of the crack.

IPC Classes  ?

• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The invention relates to a method for manufacturing solid state elements (40), in particular substrate elements for receiving electroconductive components. The method comprises at least the following steps: providing a solid state element (2) from which at least one solid state layer (4) is to be separated, generating a first group of defects by means of a laser (18), in order to create a first detachment plane (8), along which the solid state layer (4) is separated from the solid state element (2), generating a second group of defects by means of the laser (18) in order to create at least one second detachment plane (50), the first detachment plane (8) and the second detachment plane (8) being orthogonal to each other, detaching the solid state layer (4) from the solid state element (2) along the first detachment plane (8), as a result of the generation of stresses in the solid state element (2), and separating the solid state layer (4) along the second detachment plane (50) into the individual solid state elements (40).

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 26/40 - Removing material taking account of the properties of the material involved
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The present invention relates to a method for producing solid layers. The method according to the invention comprises at least the steps of providing a solid body (2) for detaching at least one solid layer (4), creating defects by means of at least one radiation source, in particular a laser, in the internal structure of the solid body for predetermining a plane of detachment, along which the solid layer is detached from the solid body, and thermally treating a polymer layer (10), arranged on the solid body (2), for the creation, in particular mechanical creation, of stresses in the solid body (2), wherein the stresses cause a crack to spread in the solid body (2) along the plane of detachment (8), detaching the solid layer (4) from the solid body (2).

IPC Classes  ?

• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor
• B23K 26/40 - Removing material taking account of the properties of the material involved
• H01L 21/268 - Bombardment with wave or particle radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The invention relates to a method for producing solid-body layers. The production method comprises at least the following steps: providing a solid body (2) for splitting off a plurality of solid-body layers (4), introducing or producing defects in the solid body (2) in order to specify a first detachment plane (8), along which a first solid-body layer (4) is removed from the solid body (2), arranging a receiving layer (10) for retaining the solid-body layer (4) on the solid body (2), thermally loading the receiving layer (10) in order to produce, in particular mechanically, stresses in the solid body (2), wherein a crack propagates in the solid body (2) along the detachment plane (8) because of the stresses, which crack removes the first solid-body layer (4) from the solid body (2), then arranging a second receiving layer for retaining a further solid-body layer (5) on the solid body (2), which has been reduced by the first solid-body layer (4), introducing or producing defects in the solid body (2) in order to specify a second detachment plane (9), along which a second solid-body layer (5) is removed from the solid body (2), thermally loading the second receiving layer in order to produce, in particular mechanically, stresses in the solid body (2), wherein a crack propagates in the solid body (2) along the second detachment plane (9) because of the stresses, which crack removes the second solid-body layer (5) from the solid body (2).

IPC Classes  ?

• C30B 33/06 - Joining of crystals
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• H01L 21/762 - Dielectric regions

Abstract

The present invention relates to a method for producing solid layers. The method according to the invention preferably comprises the steps of: providing a solid body (2) for splitting off at least one solid layer (4), creating defects by means of at least one radiation source (18), in particular a laser, in the internal structure of the solid body for predetermining a crack-initiating point, starting from which the solid layer (4) is split off from the solid body (2), and/or creating defects by means of at least the radiation source (18), in particular a laser, in the internal structure of the solid body (2) for predetermining a cracking line, along which the solid layer (4) is split off from the solid body (2), arranging a receiving layer (10) for holding the solid layer (4) on the solid body (2), thermally treating the receiving layer (10) for the creation, in particular mechanical creation, of stresses in the solid body (2), wherein the stresses cause a crack to spread from the crack-initiating point and/or along the cracking line in the solid body (2), detaching the solid layer (4) from the solid body (2).

IPC Classes  ?

• C30B 33/06 - Joining of crystals
• B23K 26/00 - Working by laser beam, e.g. welding, cutting or boring
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
• H01L 21/762 - Dielectric regions

Goods & Services

Chemicals used in industry and science (other than for medical or veterinary purposes); chemicals for use in the semiconductor industry, photovoltaic industry and the optoelectronic industry; chemicals for coating of silicon ingots and wafers (semiconductor wafers, in different producing stages). Machines for production, processing service (including testing) and handling of silicon ingots and wafers (semiconductor wafers, in different producing stages) and semiconductors and part of such machines; machines for the semiconductor industry, the solar industry, the watch industry and the display industry; machine tools, apparatus and instruments for production, processing service (including testing) and handling of silicon ingots and wafers (semiconductor wafers, in different producing stages) and semiconductors; mobile, electrostatic handling apparatus (mechanical) for picking up, transporting and putting down of wafers (semiconductor wafers, in different producing stages); apparatus for use in the preparation of semiconductors and wafers (semiconductor wafers, in different producing stages); apparatus for preparation of multi-crystalline and quasi-mono-crystalline wafers. Physical apparatus and instruments; material testing instruments and machines; semiconductors, semiconductor elements and wafer (semiconductor wafers, in different producing stages); electronic publications (downloadable); parts for all the aforesaid goods, included in class 9; simulation software for controlling machines; simulation software for tuning and optimization of engines, apparatus and instruments. Processing and transformation of materials, namely processing of products of the semiconductor industry, in particular silicon ingots and wafers (semiconductor wafers, in different producing stages) by polishing, lasering, texturing, cutting, grinding, assembling and printing; processing and transformation of materials, namely chemical and physical modifying of polymers as wells as adjuvants and associated materials for the semiconductor industry, photovoltaic industry and the optoelectronic industry; recycling of waste and trash; sorting of waste and recyclable material; waste treatment [transformation]; detoxification of hazardous materials; composting, incineration, destruction of waste and trash. Licensing of computer software, technology, patents and further industrial property rights.

Abstract

The invention relates to a method for producing solid-state layers (5), in particular for use as wafers. The method preferably comprises the following steps: providing a workpiece (4) for detaching the solid-state layers (5), said workpiece (4) having at least one exposed surface; creating and/or providing a carrier unit for receiving at least one solid-state layer (5), the carrier unit having a receiving layer (2) for holding the solid-state layer (5); applying the receiving layer (2) to the exposed surface of the workpiece (4) to form a composite structure; creating a fracture trigger point (44) by inducing a pre-defined local voltage in the edge region, in particular on the edge of the workpiece (4); and splitting the solid-state layer (5) from the workpiece (4) starting from the fracture trigger point (44).

IPC Classes  ?

• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The invention relates to a method for producing solid-state layers, in particular for use as wafers, having the following the steps: providing a workpiece (4) for detaching the solid-state layers, said workpiece (4) having at least one exposed surface; generating and/or providing a support unit for receiving at least one solid-state layer, said support unit being designed in a multilayered manner, wherein the support unit has a stabilizing layer (1), the stabilizing layer (1) is superimposed by a receiving layer (2) at least in some sections, said receiving layer (2) being designed to retain the solid-state layer, and the stabilizing layer (1) is designed in at least some sections so as to have an elastic modulus which is greater than the elastic modulus of the receiving layer (2); connecting the receiving layer (2) to the exposed surface of the workpiece (4) while forming a composite structure; and applying an inner and/or outer stress field to the composite structure such that the solid-state layer is detached from the workpiece (4) along a plane extending within the workpiece (4).

IPC Classes  ?

• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

The invention relates to a method for rounding edges of solid wafers and addresses the problem of providing a method for rounding a peripheral edge of the wafer that is already present, for avoiding the creation of sharp edges after a process step in which the wafer is divided, and for minimising the effort involved in edge rounding in one working process. The problem is solved by generating at least one peripheral recess (7) on an outer surface of the cylindrical solid starting material (1) or on the lateral surfaces of the cuboid solid starting material (1) such that, at all its points, the recess is equally spaced to a base surface or top surface of the solid starting material (1).

IPC Classes  ?

• B28D 5/00 - Fine working of gems, jewels, crystals, e.g. of semiconductor materialApparatus therefor

Goods & Services

[ Chemicals used in industry and science other than for medical or veterinary purposes; chemicals for use in the semiconductor industry, photovoltaic industry and the optoelectronic industry; chemicals for coating of silicon ingots and semiconductor wafers, in different producing stages ] [ Machines for production and processing service including handling of semiconducting material ingots, semiconducting material boules and semiconductor wafers in different producing stages and semiconductors and part of such machines, namely, semiconductor wafer manufacturing machines, semiconductor manufacturing machines, semiconductor wafer processing machines, replacement parts, filters and purifiers for machines in the nature of filters and purifiers for removing contaminants from gases used in the semiconductor industry; machines for the semiconductor industry, the solar industry, the watch industry and the display industry, namely, semiconductor manufacturing machines, semiconductor wafer manufacturing machines, solar wafer manufacturing machines, watch display manufacturing machines, display manufacturing machines; machine tools, apparatus and instruments for production and processing service including handling of silicon ingots and semiconductor wafers in different producing stages and semiconductors, namely, semiconductor wafer manufacturing machines, semiconductor manufacturing machines, semiconductor wafer processing machines, semiconductor wafer processing equipment; mobile, electrostatic mechanical handling apparatus for picking up, transporting and putting down of semiconductor wafers, in different producing stages, namely, semiconductor wafer processing machines and equipment; apparatus for use in the preparation of semiconductors and semiconductor wafers, in different producing stages, namely, semiconductor wafer manufacturing machines, semiconductor manufacturing machines, semiconductor wafer processing machines, semiconductor wafer processing equipment; apparatus for preparation of multi-crystalline and quasi-mono-crystalline wafers, namely, semiconductor and photovoltaic wafer manufacturing machines, semiconductor and photovoltaic manufacturing machines, semiconductor and photovoltaic wafer processing machines, semiconductor and photovoltaic wafer processing equipment ] [ Physical apparatus and instruments, namely, semiconductors, semiconductor devices, semiconductor chips, material testing instruments and machines, namely, scanners, machines for testing polymers or semiconductors, probes for testing polymer or semiconductors; semiconductors, semiconductor storage, logic, power, LED, diode, and photodiode elements and semiconductor wafers, in different producing stages; downloadable electronic publications in the nature of books, magazines, newsletters in the field of semiconductors; parts for all the aforesaid goods, namely, semiconductors, semiconductor storage, logic, power, LED, diode, and photodiode elements and semiconductor wafers, in different producing stages; simulation software for controlling machines; simulation software for tuning and optimization of engines, apparatus and instruments ] Processing and transformation of materials, namely, processing of products of the semiconductor industry, in particular, silicon ingots and semiconductor wafers, in different producing stages by polishing, lasering, texturing, cutting, grinding, assembling and printing; processing and transformation of materials, namely, chemical and physical modifying of polymers as wells as adjuvants and associated materials for the semiconductor industry, photovoltaic industry and the optoelectronic industry, namely, chemical treatment of semiconductor devices; recycling of waste and trash; sorting of waste and recyclable material; waste treatment; detoxification of hazardous materials; waste treatment services, namely, composting of waste; trash and waste incineration; destruction of waste and trash [ Licensing of computer software, technology, patents and further industrial property rights ]

Abstract

The invention relates to a wafer, the starting material (4) of which is a material of low ductility, which has at least one exposed surface. At least one prefabricated application layer (1) having freely selectable material properties is applied to the exposed surface of the starting material (4), thus forming a composite structure. The composite structure is subjected to an inner and/or outer stress field such that along an inner plane, the starting material (4) is split, thus forming the wafer. The wafer is provided with relief-like surface structures at the resulting gap area having substantially predefinable patterns, which can be varied by way of the properties of the starting material.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

The invention describes a method for producing thin solid body layers or solid body plates (5), in particular for use as wafers, comprising the following steps: provision of an starting material (4) made of a material with low ductility which has at least one exposed surface, provision of at least one prefabricated application layer (1) that has freely selectable material properties, application of the prefabricated application layer (1) to the exposed surface of the original material (4) to form a composite structure, application of an internal or external voltage field to the composite structure such that the original material (4) is cleaved along an internal plane to form at least two thin solid body layers (5) or solid body plates.

IPC Classes  ?

• H01L 21/762 - Dielectric regions

Abstract

A method of printing comprises the steps of: providing a solid state material having an exposed surface; applying an auxiliary layer to the exposed surface to form a composite structure, the auxiliary layer having a stress pattern; subjecting the composite structure to conditions facilitating fracture of the solid state material along a plane at a depth therein; and removing the auxiliary layer and, therewith, a layer of the solid state material terminating at the fracture depth, wherein an exposed surface of the removed layer of solid state material has a surface topology corresponding to the stress pattern.

IPC Classes  ?

• B44C 1/22 - Removing surface-material, e.g. by engraving, by etching

Abstract

It is disclosed a method of printing comprising the steps of: providing a solid state material having at least one exposed surface; applying an auxiliary layer to the exposed surface to form a composite structure, the auxiliary layer having a stress pattern; subjecting the composite structure to conditions facilitating fracture of the solid state material along a plane at a depth therein; and removing the auxiliary layer and, therewith, a layer of the solid state material terminating at the fracture depth, an exposed surface of the removed layer of solid state material having a surface topology corresponding to the stress pattern.

IPC Classes  ?

• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate
• B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising