Provided is a semiconductor nanoparticle complex in which a ligand is coordinated to a surface of a semiconductor nanoparticle. The semiconductor nanoparticle includes In and P, the ligand includes a mercapto fatty acid ester represented by the following general formula, and the mercapto fatty acid ester has an SP value of 9.30 or less. General formula: HS—R1—COOR2 (where R1 is a C1-11 hydrocarbon group and R2 is a C1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.
Embodiments of a display device are described. A display device includes a substrate (204) and a sub-pixel (R1, R2) configured to emit a display light having an emission spectrum with a first peak wavelength and a second peak wavelength. The sub-pixel includes a microLED (218) disposed on the substrate and a NS-based CC layer (220) disposed on the microLED. The NS-based CC layer includes QDs configured to emit a first light having the first peak wavelength. The microLED is configured to emit a second light having the second peak wavelength. A first portion of the second light is absorbed by the QDs and down-converted to the first light and a second portion of the second light is transmitted through the NS-based CC layer (220).
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
Provided is a conductive powder containing copper as a main component, in which D50 is 0.3 to 7.5 μm inclusive, the ratio of a major axis X to a medium diameter Y is between 1.0 and 3.0 (both inclusive), the ratio of the major axis X to a minor axis Z is between 1.5 and 8.0 (both inclusive), and an aliphatic amine is included in at least a part of a surface of the conductive powder. The aliphatic amine is one such that at least one peak is detected in a chromatogram for a mass number of 44 when the conductive powder containing copper as a main component is heated from 38°C to 900°C at a heating rate of 10°C/min in an inert atmosphere by TG-MS, and the ratio of an area of the peak in a range between 250°C and 400°C (both inclusive) to an area of the peak in a range between 250°C and 900°C (both inclusive) is 0.9 or more. A conductive paste obtained by using the conductive powder can remove a surface treatment agent by low-temperature firing, and can form a dense conductor film.
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
This conductive powder is mainly composed of copper, in which a D50 is 0.3-7.5 μm, a major axis X/middle diameter Y is 1.0-3.0, a major axis X/minor axis Z is 1.5-8.0, and an aliphatic amine is present on the surface. The aliphatic amine is such that at least one peak is detected in a chromatogram with a mass number 44 when the conductive powder containing copper as a main component is heated in TG-MS from 38°C to 900°C at a heating rate of 10°C/min in an inert atmosphere, the ratio of the area of the peak at 250-400°C to the area of the peak in the range of 250-900°C is less than 0.9, and the ratio of the area of the peak in the range of 250-500°C to the area of the peak in the range of 250-900°C is 0.9 or more. According to the present invention, it is possible to provide a conductive powder containing copper as a main component that can be suitably used for a conductive paste allowing formation of a terminal electrode that is thin, dense, and excellent in continuity, even by firing at a low temperature.
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
H10N 30/20 - Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
5.
ELECTROCONDUCTIVE POWDER COMPRISING COPPER AS MAIN COMPONENT, ELECTROCONDUCTIVE PASTE, METHOD FOR MANUFACTURING ELECTRONIC COMPONENT, AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE POWDER
This electroconductive powder comprises copper as the main component, and is configured such that: the D50 is 0.3 μm to 4.5 μm; the ratio of the major axis X to the intermediate diameter Y is 1.0 to 3.0; the ratio of the major axis X to the minor axis Z is 1.5 to 5.0; and the following (A) and (B) are satisfied. (A) The carbon content is 0.00 to 0.10 mass%. (B) The TMA shrinkage rate, as defined, is at least 0% but less than 2% at 400°C. The present invention can provide: an electroconductive powder comprising copper as the main component, the electroconductive powder being suitably usable for an electroconductive paste capable of forming terminal electrodes that are thin, dense, and excellent in continuity even when fired at a low temperature; and a method for manufacturing the electroconductive powder.
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/102 - Metallic powder coated with organic material
B22F 9/00 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor
The purpose of the present invention is to provide composite particles having nanoparticles that are excellent in terms of weather resistance. Composite particles according to an embodiment of the present invention each include at least one nanoparticle complex and an aggregate of a plurality of functional particles. The nanoparticle complex is present inside an aggregate structure that is formed of the aggregate of the functional particles, and the nanoparticle complex is held inside the aggregate structure by intermolecular force between the nanoparticle complex and the functional particles.
B01J 2/00 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic
A method of forming a light emitting device includes providing a free standing support containing a matrix material including first and second vias, depositing in the first vias a first photocurable quantum dot ink including first quantum dots suspended in a first photocurable polymer, illuminating the first photocurable quantum dot ink with ultraviolet radiation or blue light from first LEDs of an array of LEDs to crosslink the first photocurable polymer material in the first vias, depositing in the second vias a second photocurable quantum dot ink comprising second quantum dots suspended in a second photocurable polymer material, illuminating the second photocurable quantum dot ink with ultraviolet radiation or blue light from second LEDs of the array of LEDs to crosslink the second photocurable polymer material in the second vias, and attaching the free standing support to the array of LEDs after the illuminating.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H10H 29/24 - Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group comprising multiple light-emitting semiconductor devices
The present invention is in the field of nanostructures. Provided herein are microparticles comprising nanostructures and silica. Also provided herein are methods of preparing the microparticles, films comprising the microparticles, and devices comprising the microparticles. Also provided herein are display backlighting units (BLUs) that do not comprise a barrier layer.
Provided is a thermosetting conductive resin composition including: a conductive powder including a base metal; a thermosetting silicone resin having hydroxyl groups; and at least one of an amine-based additive and an acid-based additive. According to the present invention, a thermosetting conductive resin composition for forming electrodes of electronic components can be provided that has high viscosity stability and can form a conductive resin layer having a reduced decrease in conductivity (excellent conductivity) and excellent moisture resistance, even when the thermosetting silicone resin having hydroxyl groups and the conductive powder including a base metal such as Cu are included.
This invention provides a polymer type conductive paste that can provide a highly reliable conductive layer even in high humidity environments. The polymer type conductive paste in accordance with the embodiment of the present invention contains conductive metal powder, binder resin, organic solvent, and specific additives, wherein said binder resin is polyvinyl butyral resin, wherein said specific additives are one or more selected from the group consisting of stearic acid, lauric acid, octadecyl butanedioic acid, benzoic acid, acetamidophenol, aminophenol, catechol, and N,N-bis(2-hydroxyethyl) coco alkylamine, and wherein said specific additives are contained at the content of not less than 0.01 parts by mass and not more than 3.0 parts by mass per 100 parts by mass of said conductive metal powder.
C09D 129/14 - Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols
H01G 9/042 - Electrodes characterised by the material
This conductive paste is characterized by comprising a conductive powder, a binder resin, and an organic solvent, the binder resin containing one or more polybutenes, and the weight average molecular weight (Mw) of all the polybutene components being 3,700 or greater. According to the present invention, it is possible to provide a conductive paste that can be used in various applications, can form an electrode layer having sufficient adhesion to a base layer in the manufacture of a laminated component with a high level of lamination, and can prevent the occurrence of lamination deviation when fabricating and pressure bonding a laminate structure by laminating a plurality of layers of a coating film obtained using the conductive paste.
This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using a Group IV metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
B82Y 40/00 - Manufacture or treatment of nanostructures
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
Provided is a thermosetting conductive resin composition comprising: a conductive powder and a resin binder, in which the conductive powder comprises a flake-shaped conductive powder; the resin binder comprises a thermosetting silicone resin having hydroxyl groups; and 25.0% by mass or more of the resin binder is the thermosetting silicone resin having hydroxyl groups. The present invention can provide a thermosetting conductive resin composition capable of forming conductive resin layers having high moisture resistance and excellent conductivity even when multiple kinds of resins including a silicone resin are used as resin binders.
The invention pertains to the field of nanotechnology. The invention provides highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe1-xTex core and ZnS and/or ZnSe shell layers. The nanostructures comprising a ZnSe1-xTex core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
An ink comprising: a metal nanoparticle with at least a portion of the surface of the metal nanoparticle coordinated by a hydroxycarboxylic acid ligand, the hydroxycarboxylic acid ligand comprising a carboxyl group and at least one hydroxyl group; and a solvent.
Provided is a semiconductor nanoparticle complex composition and the like in which a semiconductor nanoparticle complex is dispersed at a high concentration and which has high fluorescence quantum yield. A semiconductor nanoparticle complex composition in which a semiconductor nanoparticle complex is dispersed in a dispersion medium, wherein: the semiconductor nanoparticle complex has a semiconductor nanoparticle and a ligand coordinated to the surface of the semiconductor nanoparticle; the ligand includes an organic group; the dispersion medium is a monomer or a prepolymer; the semiconductor nanoparticle complex composition further includes a crosslinking agent; and a mass fraction of the semiconductor nanoparticle in the semiconductor nanoparticle complex composition is 30% by mass or more.
The method for producing a lithium-lanthanum-zirconium composite oxide powder comprises: a first step for preparing a lanthanum zirconate powder having an average particle size of 20 nm to 200 nm, a lanthanum compound, and a lithium compound, respectively; a second step for depositing the lanthanum compound and the lithium compound on the surface of the lanthanum zirconate powder to generate a precursor powder; a third step for obtaining a lithium-lanthanum-zirconium composite oxide powder by heating the precursor powder for from one second to 30 seconds at from 900°C to 1200°C with the precursor powder dispersed in a carrier gas, using a gas having an oxygen partial pressure of from more than 1.0×10-30 atm to 1.0 atm as the carrier gas; and a fourth step for recovering the lithium-lanthanum-zirconium composite oxide powder obtained in the third step. According to the present invention, it is possible to suppress the scattering of Li and obtain a small-particle-size LLZ powder having excellent storage stability.
2 (1). The mercapto fatty acid ester has an SP value of 9.20 or more. The mercapto fatty acid ester has a molecular weight of 700 or less, and the average SP value of the entire ligand is 9.10 to 11.00. The present invention provides a semiconductor nanoparticle complex dispersible at a high mass fraction in a polar dispersion medium while keeping high fluorescence quantum yield (QY) of semiconductor nanoparticles.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
C08G 65/32 - Polymers modified by chemical after-treatment
This method is for producing a metal powder and comprises: a first step for dispersing, in a gas phase by means of a carrier gas, a raw material metal powder produced by reducing metal ions in a liquid phase; a second step for subjecting the raw material metal powder dispersed in the gas phase to a thermal treatment at a temperature of at least (Tm-100)°C (where Tm°C is the melting point of the raw material metal powder) to produce a metal powder precursor dispersed in the gas phase; and a third step for cooling the metal powder precursor dispersed in the gas phase to produce a metal powder. With the present invention, it is possible to produce a metal powder having excellent crystallinity and a narrow particle size distribution.
B22F 9/06 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using physical processes starting from liquid material
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
20.
ELECTROLUMINESCENT DEVICES WITH HYBRID TRANSPORT LAYERS
Embodiments of an electroluminescent device are described. The electroluminescent device includes a substrate, a first electrode disposed on the substrate, an emission layer comprising luminescent nanostructures disposed on the first electrode, a hybrid transport layer disposed on the emission layer, and a second electrode disposed on the hybrid transport layer. The hybrid transport layer includes an organic layer and inorganic nanostructures disposed within the organic layer. The luminescent nanostructures are separated from the inorganic nanostructures by the organic layer.
H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising polythiol ligands with pendant moieties. The polythiol ligand with pendant moieties increase the solubility of the nanostructures in solvents and resins. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
B82Y 40/00 - Manufacture or treatment of nanostructures
C07C 319/18 - Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides by addition of thiols to unsaturated compounds
C07C 323/22 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and doubly-bound oxygen atoms bound to the same carbon skeleton
Disclosed are examples of chemical compounds useful as ligands for photoluminescent particles, such as nanoparticles, populations of the particles comprising such ligands, films and other compositions comprising the ligated particles, and methods of synthesis.
C07C 229/16 - Compounds containing amino and carboxyl groups bound to the same carbon skeleton having amino and carboxyl groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having only one amino and one carboxyl group bound to the carbon skeleton the nitrogen atom of the amino group being further bound to acyclic carbon atoms or to carbon atoms of rings other than six-membered aromatic rings to carbon atoms of hydrocarbon radicals substituted by amino or carboxyl groups, e.g. ethylenediamine-tetra-acetic acid, iminodiacetic acids
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
C09K 11/62 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing gallium, indium or thallium
A composition comprises a carrier matrix; a plurality of photoluminescent nanostructures distributed within the carrier matrix; a hindered amine stabilizer; and at least one of (i) an alkylalkoxysilane and a coordination polymer, or (ii) a silanized coordination polymer.
Provided is a semiconductor nanoparticle complex having both improved fluorescence quantum yield and improved heat resistance. A semiconductor nanoparticle complex according to an embodiment includes a semiconductor nanoparticle complex in which two or more ligands including a ligand I and a ligand II are coordinated to the surface of a semiconductor nanoparticle, wherein: the ligands are composed of an organic group and a coordinating group, the ligand I has one mercapto group as the coordinating group, and the ligand II has at least two or more mercapto groups as the coordinating groups.
Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about. 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
B32B 17/06 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance
B32B 27/18 - Layered products essentially comprising synthetic resin characterised by the use of special additives
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
B82Y 40/00 - Manufacture or treatment of nanostructures
An insulated covered soft magnetic powder in accordance with embodiments of the present invention comprises a soft magnetic powder having an iron content of 99.0 wt. % or more wherein at least part of the surface of the soft magnetic powder is covered with an insulating covering oxide. The insulated covered soft magnetic powder has a 50% volume cumulative particle diameter (D50) by laser diffraction/scattering particle size distribution measurement of 0.01 μm to 2.0 μm, an oxygen content of 0.1 wt. % to 2.0 wt. %, a carbon content and a nitrogen content of the entire insulated covered soft magnetic powder of 0 wt. % to 0.2 wt. %, and 0 wt. % to 0.2 wt. %, respectively. The total content of oxygen, carbon and nitrogen of the insulated covered soft magnetic powder is 0.1 wt. % to 2.0 wt. % of the entire insulated covered soft magnetic powder.
B22F 1/16 - Metallic particles coated with a non-metal
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
H01F 1/20 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder
27.
Semiconductor nanoparticle aggregate, semiconductor nanoparticle aggregate dispersion liquid, semiconductor nanoparticle aggregate composition, and semiconductor nanoparticle aggregate cured film
A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 605 nm to 655 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 28 nm or less, (2) a standard deviation of a peak wavelength of the emission spectrum is 10 nm or more and 30 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 12 nm or less.
Disclosed are films comprising Ag In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm when excited using a blue light source with a wavelength of about 450 nm.
CGG of 0.3-2.0 μm. According to the present invention, a thin and dense terminal electrode having excellent continuity, even when fired at a low temperature, can be formed while maintaining high productivity. Moreover, an electronic component having a thin and dense terminal electrode having excellent continuity, even when fired at a low temperature, can be manufactured while maintaining high productivity.
01 - Chemical and biological materials for industrial, scientific and agricultural use
09 - Scientific and electric apparatus and instruments
Goods & Services
Chemical substances in the nature of nanomaterial and fluorescent chemicals in powder or liquid form, namely, quantum dot dispersions for use in the manufacture of displays, quantum dot materials for use in the manufacture of solar cells, quantum dots for use in the manufacture of bioimaging and medical diagnostics equipment, fluorescent quantum dots for labeling biological molecules, quantum dots for use in the manufacture of LED lighting products, quantum dots for use in the manufacture of sensors and detectors; nanomaterials, namely reagents of semi-conductor nanocrystals for scientific and research use; chemicals, namely, quantum dot dispersions for use in the manufacture of displays, quantum dot materials for use in the manufacture of solar cells, quantum dots for use in the manufacture of bioimaging and medical diagnostics equipment, fluorescent quantum dots for labeling biological molecules, quantum dots for use in the manufacture of LED lighting products, quantum dots for use in the manufacture of sensors and detectors; unprocessed plastics in primary form; conductive adhesives for use in industry, namely, conductive pastes Quantum dots, namely, crystalline semi-conductor materials for household appliances; quantum dots, namely, crystalline semi-conductor materials for touchscreen devices or lighting apparatus; quantum dots, namely nano crystalline semi-conductor materials; quantum dot dispersions namely, crystalline semi-conductor materials; quantum dot ink namely, crystalline semi-conductor materials; quantum dot film, namely, crystalline semi-conductor materials; quantum dots, namely, crystalline semi-conductor materials; quantum dot light-emitting diodes [QLED]; electronic machines and apparatus and their parts, namely, sensors and detectors; electrical power distribution and control machines and apparatus; rotary converters; phase modifiers; solar cells; electrical cells; electric wires and cables; electrical conductors, namely, conductive pastes; electric resistance namely, resistance pastes; magnetic cores; resistance wires; electrodes
01 - Chemical and biological materials for industrial, scientific and agricultural use
09 - Scientific and electric apparatus and instruments
Goods & Services
Chemical substances in the nature of nanomaterial and fluorescent chemicals in powder or liquid form, namely, quantum dot dispersions for use in the manufacture of displays, quantum dot materials for use in the manufacture of solar cells, quantum dots for use in the manufacture of bioimaging and medical diagnostics equipment, fluorescent quantum dots for labeling biological molecules, quantum dots for use in the manufacture of LED lighting products, quantum dots for use in the manufacture of sensors and detectors; nanomaterials, namely reagents of semi-conductor nanocrystals for scientific and research use; chemicals, namely, quantum dot dispersions for use in the manufacture of displays, quantum dot materials for use in the manufacture of solar cells, quantum dots for use in the manufacture of bioimaging and medical diagnostics equipment, fluorescent quantum dots for labeling biological molecules, quantum dots for use in the manufacture of LED lighting products, quantum dots for use in the manufacture of sensors and detectors; unprocessed plastics in primary form; conductive adhesives for use in industry, namely, conductive pastes Quantum dots, namely, crystalline semi-conductor materials for household appliances; quantum dots, namely, crystalline semi-conductor materials for touchscreen devices or lighting apparatus; quantum dots, namely nano crystalline semi-conductor materials; quantum dot dispersions namely, crystalline semi-conductor materials; quantum dot ink namely, crystalline semi-conductor materials; quantum dot film, namely, crystalline semi-conductor materials; quantum dots, namely, crystalline semi-conductor materials; quantum dot light-emitting diodes [QLED]; electronic machines and apparatus and their parts, namely, sensors and detectors; electrical power distribution and control machines and apparatus; rotary converters; phase modifiers; solar cells; electrical cells; electric wires and cables; electrical conductors, namely, conductive pastes; electric resistance namely, resistance pastes; magnetic cores; resistance wires; electrodes
09 - Scientific and electric apparatus and instruments
Goods & Services
Semiconductors; light emitting diodes; quantum dot lights emitting diodes; visual displays, namely, computer display monitors and digital signage display panels; electric luminescent display panels; luminous signs; films for display, namely, optical filters in the nature of optical films containing semiconductor nanoparticles for use in backlighting units of electronic displays; optical film components, namely, optical filters in the nature of color converters and wavelength converters for LED-driven LCDs; magnetic cores; nanomaterials, being nanoscale electronic components, namely, color converters and wavelength converters in the nature of quantum dots being crystalline semi-conductor material, for use in the manufacture of semiconductors, electronic components and subsystems, light emitting diodes, lasers, computer hardware, telecommunications hardware, data storage hardware, circuit boards, visual displays, photovoltaics, solar cells, chromophores, fluorophores, biosensors and chemical sensors; quantum dots, namely, crystalline semiconductor materials for use in consumer electronics, touch screen devices, and lighting products; nanomaterials electrical conductors used in nanowires, nanoribbons, nanorods, and nanotubes for use in lighting products; quantum dots, namely, nanocrystalline semi-conductor materials; quantum dot dispersions, namely, crystalline semi-conductor materials; quantum dot inks, namely, crystalline semi-conductor materials; quantum dot films, namely, crystalline semi-conductor materials; quantum dot powders, namely, crystalline semi-conductor materials
09 - Scientific and electric apparatus and instruments
Goods & Services
Semiconductors; light emitting diodes; quantum dot lights emitting diodes; visual displays, namely, computer display monitors and digital signage display panels; electric luminescent display panels; luminous signs; films for display, namely, optical filters in the nature of optical films containing semiconductor nanoparticles for use in backlighting units of electronic displays; optical film components, namely, optical filters in the nature of color converters and wavelength converters for LED-driven LCDs; magnetic cores; nanomaterials, being nanoscale electronic components, namely, color converters and wavelength converters in the nature of quantum dots being crystalline semi-conductor material, for use in the manufacture of semiconductors, electronic components and subsystems, light emitting diodes, lasers, computer hardware, telecommunications hardware, data storage hardware, circuit boards, visual displays, photovoltaics, solar cells, chromophores, fluorophores, biosensors and chemical sensors; quantum dots, namely, crystalline semiconductor materials for use in consumer electronics, touch screen devices, and lighting products; nanomaterials electrical conductors used in nanowires, nanoribbons, nanorods, and nanotubes for use in lighting products; quantum dots, namely, nanocrystalline semi-conductor materials; quantum dot dispersions, namely, crystalline semi-conductor materials; quantum dot inks, namely, crystalline semi-conductor materials; quantum dot films, namely, crystalline semi-conductor materials; quantum dot powders, namely, crystalline semi-conductor materials
34.
BLUE-EMITTING NANOCRYSTALS WITH CUBIC SHAPE AND FLUORIDE PASSIVATION
This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
The invention is in the field of nanostructure synthesis. Provided are highly luminescent core/shell nanostructures with zinc fluoride and zinc acetate bound to their surface. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
H01L 29/06 - Semiconductor bodies characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
The nanoparticle composite according to an embodiment of the present invention comprises a nanoparticle (11), ligands (12) that are bonded to the nanoparticle, and functional particles (13) that are bonded to the nanoparticle via the ligands, and has a structure in which the functional particles surround the circumference of the nanoparticle. In the nanoparticle composite according to another embodiment of the present invention, a nanoparticle is contained in an aggregate structure (14) constituted from a plurality of functional particles, and the nanoparticle and the aggregate structure are bonded via ligands.
An infrared-absorbing quantum dot according to an embodiment of the present invention includes silver (Ag) and tellurium (Te), and has an absorbance peak in the range of 1,400 nm to 1,800 nm, wherein the peak-to-trough ratio (peak/trough) of the absorbance peak is at least 1.0.
In one example of a nanoparticle cluster according to an embodiment of the present invention, nanoparticles in the nanoparticle cluster each comprise a metal core and a metal oxide coating that covers at least a portion of the surface of the metal core, wherein the average diameter of the nanoparticles is within a range of 2-200 nm, and the metal oxide coating includes at least one selected from the group consisting of Ba, Ti, Zr, Hf, V, Nb, Ta, W, and Mo.
B22F 1/16 - Metallic particles coated with a non-metal
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
39.
POLYMER-TYPE CONDUCTIVE PASTE, CONDUCTIVE FILM, AND SOLID ELECTROLYTIC CAPACITOR ELEMENT
The present invention provides a polymer-type conductive paste that can be used to obtain a highly reliable conductive layer even in a high-humidity environment. A polymer-type conductive paste according to an embodiment of the present invention contains a conductive metal powder, a binder resin, an organic solvent, and a specific additive. The binder resin is a polyvinyl butyral resin. The specific additive is one or more selected from the group consisting of stearic acid, lauric acid, octadecyl butanedioic acid, benzoic acid, acetamidophenol, aminophenol, catechol, and N,N-bis(2-hydroxyethyl)palm alkylamine. The contained amount of the specific additive is in the range of 0.01-3.0 parts by mass with respect to 100 parts by mass of the conductive metal powder.
5050 in the range of 0.05-1.0μm, inclusive; b is an acrylic resin which has an acid value in the range of 0-10mgKOH/g, inclusive; c is an alcohol-based solvent which is capable of dissolving the acrylic resin therein, has a carbon number of 3 or higher and has a boiling point of 300°C or less; and a step for forming a plate-shaped film by applying a coating of the sintering-type conductive paste onto the substrate surface, and a step for forming a conductor film by drying and sintering the plate-shaped film formed on the substrate are included in said method.
B05D 3/00 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
B05D 3/02 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
B05D 5/12 - Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
C09D 133/00 - Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereofCoating compositions based on derivatives of such polymers
H01B 13/00 - Apparatus or processes specially adapted for manufacturing conductors or cables
5050 of 0.05 µm to 1.0 µm, an acrylic resin that has an acid value of 0 mgKOH/g to 10 mgKOH/g, and an organic solvent in which the acrylic resin is dissolved, and is also characterized in that: the organic solvent is an alcohol-based solvent having 3 or more carbon atoms and a boiling point of 300°C or less; and the water content in the paste is less than 0.50% by mass.
C09D 133/00 - Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereofCoating compositions based on derivatives of such polymers
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having high moisture resistance. Alternatively, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.
A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having high moisture resistance. Alternatively, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.
A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a metal powder, a resin binder, and an organic solvent, wherein 20.0% by mass or more of the metal powder is a flaky metal powder, and 70.0% by mass or more of the resin binder is a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.
H01B 1/04 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
H01G 9/042 - Electrodes characterised by the material
H01G 9/048 - Electrodes characterised by their structure
45.
LIGHT EMITTING DEVICES INCLUDING A QUANTUM DOT COLOR CONVERSION MATERIAL AND METHOD OF MAKING THEREOF
A method of forming a light emitting device includes providing a free standing support containing a matrix material including first and second vias, depositing in the first vias a first photocurable quantum dot ink including first quantum dots suspended in a first photocurable polymer, illuminating the first photocurable quantum dot ink with ultraviolet radiation or blue light from first LEDs of an array of LEDs to crosslink the first photocurable polymer material in the first vias, depositing in the second vias a second photocurable quantum dot ink comprising second quantum dots suspended in a second photocurable polymer material, illuminating the second photocurable quantum dot ink with ultraviolet radiation or blue light from second LEDs of the array of LEDs crosslink the second photocurable polymer material in the second vias, and attaching the free standing support to the array of LEDs after the illuminating.
H01L 33/56 - Materials, e.g. epoxy or silicone resin
H01L 33/48 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor body packages
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
46.
SMALL MOLECULE PASSIVATION OF QUANTUM DOTS FOR INCREASED QUANTUM YIELD
This disclosure pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one population of nanostructures; (b) at least one metal halide bound to the surface of the nanostructures; and (c) at least one metal carboxylate bound to the surface of the nanostructures. The nanostructure compositions have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are methods of preparing the nanostructure compositions. And, nanostructure films and molded articles comprising the nanostructure compositions are also provided.
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
47.
Quantum dot material and method for producing quantum dot material
An object of the present invention is to provide a core/shell type quantum dot material capable of increasing the photoluminescence quantum yield and a method of manufacturing the same. The quantum dot material according to one embodiment of the present invention is a quantum dot material comprising a plurality of nanoscopic core-shell structures, each nanoscopic core-shell structure including a nanocrystalline core including phosphorus and indium, a shell disposed on the nanocrystalline core, and a modifier comprising at least one of chlorine and bromine, wherein the content of chlorine and/or bromine is within a range of 2 to 15 mass % of the quantum dot material.
x core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
The invention pertains to the field of nanotechnology. The disclosure provides nanostructure compositions comprising (a) at least one organic solvent; (b) at least one population of nanostructures comprising a core and at least one shell, wherein the nanostructures comprise inorganic ligands bound to the surface of the nanostructures; and (c) at least one poly(alkylene oxide) additive. The nanostructure compositions comprising at least one poly(alkylene oxide) additive show improved solubility in organic solvents. And, the nanostructure compositions show increased suitability for use in inkjet printing. The disclosure also provides methods of producing emissive layers using the nanostructure compositions.
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00 - Manufacture or treatment of nanostructures
C08G 65/26 - Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring from cyclic ethers and other compounds
H10K 30/35 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 71/60 - Forming conductive regions or layers, e.g. electrodes
Provided are patterned films comprising nanostructures and one or more UV-cured monomers. Also provide are methods of making the patterned films, and electroluminescent devices comprising the patterned films.
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
G03F 7/029 - Inorganic compoundsOnium compoundsOrganic compounds having hetero atoms other than oxygen, nitrogen or sulfur
A method of forming light emitting diodes includes forming a first-conductivity-type compound semiconductor layer over a substrate, etching the first-conductivity-type compound semiconductor layer to form a first pillar structure and a second pillar structure without exposing the substrate between the first and the second pillar structures, selectively growing a semiconductor active layer over the first and the second pillar structures, and selectively growing a second-conductivity-type compound semiconductor layer on the semiconductor active layer.
H01L 33/32 - Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
H01L 33/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H01L 33/62 - Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/38 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the electrodes with a particular shape
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
52.
Rapid thickening of aminosilicones to promote emulsion stability and adhesion of UV-curable quantum dot enhancement film emulsions
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures, an aminosilicone polymer, an organic resin, and a cation. The present invention also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.
A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a metal powder, a resin binder, and an organic solvent, wherein 20.0% by mass or more of the metal powder is a flaky metal powder, and 70.0% by mass or more of the resin binder is a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.
H01B 1/04 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of carbon-silicon compounds, carbon, or silicon
H01G 9/048 - Electrodes characterised by their structure
H01G 9/042 - Electrodes characterised by the material
A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having high moisture resistance. Alternatively, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.
Embodiments of a display device are described. A display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The light source is configured to emit a primary light having a first peak wavelength. The LCD module includes a first sub-pixel having a phosphor film and a second sub-pixel having a non-phosphor film. The phosphor film is configured to receive a first portion of the primary light and to convert the first portion of the primary light to emit a secondary light having a second peak wavelength that is different from the first peak wavelength. The non-phosphor film is configured to receive a second portion of the primary light and to optically modify the second portion of the primary light to emit an optically modified primary light having a third peak wavelength that is different from the first and second peak wavelengths.
A light emitting device includes a light emitting diode configured to emit blue or ultraviolet radiation incident photons, a color conversion material located over the light emitting diode and configured to absorb the incident photons emitted by the light emitting diode and to generate converted photons having a longer peak wavelength than a peak wavelength of the incident photons, and at least one light extracting feature located between the light emitting diode and the color conversion material.
A light emitting device includes a first optical cavity bounded by cavity walls, a first light emitting diode located in the first optical cavity and configured to emit blue or ultraviolet radiation first incident photons, a first color conversion material located over the first light emitting diode and configured to absorb the first incident photons emitted by the light emitting diode and to generate first converted photons having a longer peak wavelength than a peak wavelength of the first incident photons, and a first color selector located over the first color conversion material and configured to absorb or reflect the first incident photons and to transmit the first converted photons.
H01L 25/075 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
The present invention provides a thermosetting conductive resin composition which contains a conductive powder and a resin binder, wherein: the conductive powder contains a flake conductive powder; the resin binder contains a thermosetting silicone resin having a hydroxyl group; and 25.0% by mass or more of the resin binder is composed of the thermosetting silicone resin having a hydroxyl group. Consequently, the present invention is able to provide a thermosetting conductive resin composition which is capable of forming a conductive resin layer that has high moisture resistance and excellent electrical conductivity even in cases where a plurality of kinds of resins including a silicone resin are used as the resin binder.
A thermosetting electroconductive resin composition characterized by containing an electroconductive powder including a base metal, a thermosetting silicone resin having a hydroxyl group, and at least one of an amine-based additive and an acid-based additive. According to the present invention, it is possible to provide a thermosetting electroconductive resin composition for forming an electrode of an electronic component, the thermosetting electroconductive resin composition having high viscosity stability, suppressing any decrease in electroconductivity (the electroconductivity is excellent), and being capable of forming an electroconductive resin layer having exceptional moisture resistance, even when the thermosetting electroconductive resin composition contains a thermosetting silicone resin having a hydroxyl group and an electroconductive powder including a base metal such as Cu.
This ink contains metal nanoparticles and a solvent. At least a part of the surface of the metal nanoparticles is coordinated by a hydroxycarboxylic acid ligand, and the hydroxycarboxylic acid ligand includes a carboxyl group and at least one hydroxyl group.
A method of producing core/shell semiconductor nanoparticles, the method comprising a shell formation step of adding a solution of group VI element precursor while adding a solution of zinc branched chain carboxylate to a core particle-dispersed solution to allow the zinc branched chain carboxylate to react with the group VI element precursor in presence of the core particles for forming a shell containing zinc and the group VI element on surfaces of the core particles. The present invention can provide a simple semiconductor nanoparticle production method of producing core/shell semiconductor nanoparticles with excellent optical properties when two or more types of the shell precursors are used to produce the core/shell semiconductor nanoparticles.
Method for producing copper-selenide nanoparticles, aggregated bodies of copper-selenide nanoparticles, copper-selenide nanoparticles, and film-coated structure
In a method for producing nanoparticles of copper selenide, a flowable copper precursor is formed by combining a copper starting material and a ligand, and a flowable selenium precursor is formed by suspending a selenium starting material in a liquid. Then a flowable copper-selenium mixture including a lower-polarity solvent is formed by combining the flowable copper precursor and the flowable selenium precursor. The flowable copper-selenium mixture is conducted through at least one heating unit, and the nanoparticles of copper selenide are isolated in an oxygen-depleted environment. The isolation includes combining a solution containing the nanoparticles of copper selenide and a deoxygenated, higher-polarity solvent to precipitate the nanoparticles.
B22F 9/24 - Making metallic powder or suspensions thereofApparatus or devices specially adapted therefor using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
B22F 1/16 - Metallic particles coated with a non-metal
An ink composition according to an embodiment of the present invention, comprising: a volatile solvent; and dispersed in the volatile solvent, a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands, wherein a ratio by mass of the semiconductor nanoparticles to the volatile solvent is greater than 1:1. A product according to an embodiment of the present invention comprising: a solid substrate; and arranged on the solid substrate, a dried residue of an ink composition, the dried residue comprising a plurality of semiconductor nanoparticles arranged without an intervening polymer matrix, wherein the a plurality of semiconductor nanoparticles each coordinated to a plurality of organic ligands.
This method for producing core/shell-type semiconductor nanoparticles is characterized by comprising a shell forming step for adding raw material zinc carboxylate and a Group VI element precursor to a dispersion of core particles, and reacting the raw material zinc carboxylate with the Group VI element precursor in the presence of the core particles to form shells containing zinc and a Group VI element on the surfaces of the core particles, wherein: the proportion of C8-C10 carboxylic acids in all carboxylic acids, which form the raw material zinc carboxylate, is at least 80.0 mass%; and the average branching degree of all carboxylic acids, which form the raw material zinc carboxylate, is 1.1-2.9. According to the present invention, it is possible to provide a simple method which is for producing semiconductor nanoparticles and by which semiconductor nanoparticles having a core/shell-type structure and excellent optical characteristics can be produced when semiconductor nanoparticles having a core/shell-type structure are produced using at least two shell precursors.
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising donor-acceptor ligands. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
H01L 51/00 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
66.
Semiconductor nanoparticle aggregate, semiconductor nanoparticle aggregate dispersion liquid, semiconductor nanoparticle aggregate composition, and semiconductor nanoparticle aggregate cured film
A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 515 nm to 535 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 15 nm or more, (2) a standard deviation of a peak wavelength of the emission spectrum is 12 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 2 nm or more.
Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
ROSH compliant mixed quantum dot films are disclosed which, when contained in a film within a display, exhibit high color gamut, high energy efficiency, and a narrow full width at half maximum at individual wavelength emissions.
Embodiments of a display device are described. A display device includes first and second sub-pixels. The first sub-pixel includes a first light source having a multi-layer stack and a first substrate configured to support the first light source. The multi-layer stack includes an organic phosphor film or a quantum dot (QD) based phosphor film configured to emit a first light having a first peak wavelength. The first substrate includes a first control circuitry configured to independently control the first light source. The second sub-pixel includes a second light source and a second substrate configured to support the second light source. The second light source has a microLED or a miniLED configured to emit a second light having a second peak wavelength that is different from the first peak wavelength. The second peak wavelength can be in the blue wavelength region of the visible spectrum. The second substrate includes a second control circuitry configured to independently control the second light source.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 50/13 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
Embodiments of a flexible electroluminescent (EL) device are described. An EL device includes a device stack and a flexible substrate configured to support the device stack. The device stack can include a anode and a cathode, a quantum dot (QD) film positioned between the anode and the cathode and configured to produce light having a first peak wavelength. The device stack further includes a patterned insulating layer disposed on the anode and configured to form electrically active regions in the device stack and to control emission of the light from the EL device through the electrically active regions. The EL device further includes an encapsulation layer disposed on the cathode.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/52 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED) - Details of devices
H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
5050) of this insulated covered soft magnetic powder as determined by laser diffraction/scattering particle size distribution measurement is from 0.01 μm to 2.0 μm; the respective content ratios of oxygen, carbon and nitrogen to the entire insulated covered soft magnetic powder are from 0.1 wt% to 2.0 wt% (oxygen), from 0 wt% to 0.2 wt% (carbon), and from 0 wt% to 0.2 wt% (nitrogen); and the content ratio of the sum of oxygen, carbon and nitrogen to the entire insulated covered soft magnetic powder is from 0.1 wt% to 2.0 wt%.
H01F 1/24 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of particles, e.g. powder pressed, sintered, or bound together the particles being insulated
H01F 1/33 - Magnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials mixtures of metallic and non-metallic particlesMagnets or magnetic bodies characterised by the magnetic materials thereforSelection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metallic particles having oxide skin
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/16 - Metallic particles coated with a non-metal
Provided is a semiconductor nanoparticle complex composition and the like in which a semiconductor nanoparticle complex is dispersed at a high concentration and which has high fluorescence quantum yield. A semiconductor nanoparticle complex composition in which a semiconductor nanoparticle complex is dispersed in a dispersion medium, wherein: the semiconductor nanoparticle complex has a semiconductor nanoparticle and a ligand coordinated to the surface of the semiconductor nanoparticle; the ligand includes an organic group; the dispersion medium is a monomer or a prepolymer; the semiconductor nanoparticle complex composition further includes a crosslinking agent; and a mass fraction of the semiconductor nanoparticle in the semiconductor nanoparticle complex composition is 30% by mass or more.
Provided is a semiconductor nanoparticle complex dispersion liquid in which semiconductor nanoparticles are dispersed in a polar dispersion medium at a high mass fraction, and in which high fluorescence quantum efficiency (QY) is maintained. A semiconductor nanoparticle complex dispersion liquid according to an embodiment includes a semiconductor nanoparticle complex dispersed in an organic dispersion medium, wherein: the semiconductor nanoparticle complex is composed of two or more ligands including an aliphatic thiol ligand and a polar ligand, and a semiconductor nanoparticle with the ligands coordinated to the surface thereof; the ligands are composed of an organic group and a coordinating group; the organic group of the polar ligand includes a hydrophilic functional group; and an SP value of the organic dispersion medium is 8.5 or more.
Provided is a semiconductor nanoparticle complex in which two or more kinds of ligands including a ligand I and a ligand II are coordinated to a surface of a semiconductor nanoparticle. The ligands are each an organic ligand including an organic group and a coordinating group. The ligand I is a thiocarboxylic acid represented by the following general formula (1). The mole fraction of the ligand I in the ligands is 0.2 mol % to 35.0 mol %.
Provided is a semiconductor nanoparticle complex in which two or more kinds of ligands including a ligand I and a ligand II are coordinated to a surface of a semiconductor nanoparticle. The ligands are each an organic ligand including an organic group and a coordinating group. The ligand I is a thiocarboxylic acid represented by the following general formula (1). The mole fraction of the ligand I in the ligands is 0.2 mol % to 35.0 mol %.
General formula (1):
Provided is a semiconductor nanoparticle complex in which two or more kinds of ligands including a ligand I and a ligand II are coordinated to a surface of a semiconductor nanoparticle. The ligands are each an organic ligand including an organic group and a coordinating group. The ligand I is a thiocarboxylic acid represented by the following general formula (1). The mole fraction of the ligand I in the ligands is 0.2 mol % to 35.0 mol %.
General formula (1):
HS—X—(COOH)n (1)
Provided is a semiconductor nanoparticle complex in which two or more kinds of ligands including a ligand I and a ligand II are coordinated to a surface of a semiconductor nanoparticle. The ligands are each an organic ligand including an organic group and a coordinating group. The ligand I is a thiocarboxylic acid represented by the following general formula (1). The mole fraction of the ligand I in the ligands is 0.2 mol % to 35.0 mol %.
General formula (1):
HS—X—(COOH)n (1)
(In general formula (1), X is a (n+1)-valent hydrocarbon group, and n is a natural number of 1 to 3.) The present disclosure provides a semiconductor nanoparticle complex dispersible at a high mass fraction in a dispersion medium having polarity while a high fluorescence quantum yield (QY) of the semiconductor nanoparticle is retained.
2. The mercapto fatty acid ester has an SP value of 9.20 or more. The mercapto fatty acid ester has a molecular weight of 700 or less, and the average SP value of the entire ligand is 9.10 to 11.00. The present invention provides a semiconductor nanoparticle complex dispersible at a high mass fraction in a polar dispersion medium while keeping high fluorescence quantum yield.
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
This invention pertains to the field of nanotechnology. The invention relates to nanoparticles comprising zinc oxide treated with a silane compound. The nanoparticles comprising zinc oxide functionalized with silane compounds show improved stability. And, quantum dot light emitting diodes prepared using nanoparticles comprising zinc oxide functionalized with silane compounds in the electron transport layer show improved per-formance. The invention also relates to methods of producing nanoparticles comprising zinc oxide functionalized with silane compounds.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/42 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H01L 33/06 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
1-30 hydrocarbon group). The present invention can provide a semiconductor nanoparticle complex that keeps high fluorescence quantum yield before and after purification.
This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
C09K 11/62 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing gallium, indium or thallium
B32B 17/06 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance
B32B 27/18 - Layered products essentially comprising synthetic resin characterised by the use of special additives
Embodiments of a display device are described. A display device includes a backlight unit having a light source and a liquid crystal display (LCD) module. The LCD module includes a nanostructure-based color conversion (NS-based CC) layer and a light extraction layer. The NS-based CC layer is configured to receive a primary light, from the light source, having a first peak wavelength and to convert a portion of the primary light to emit a first portion of a secondary light having a second peak wavelength. The second peak wavelength is different from the first peak wavelength. The light extraction layer is optically coupled to the NS-based CC layer and is configured to prevent total internal reflection of a second portion of the secondary light. The light extraction layer has patterned features with one or more dimension in nanometer scale.
Embodiments of a flexible electroluminescent (FEE) device are described. An FEE device includes a device stack with a quantum dot (QD) film configured to generate a first light having a first peak wavelength and a flexible substrate configured to support the device stack and emit a first portion of the first light. The FEE device further includes an encapsulation layer disposed on the device stack and an outcoupling layer disposed on the flexible substrate. The encapsulation layer can be configured to provide mechanical and environmental protection to the FEE device from moisture or oxygen. The outcoupling layer can be configured to prevent total internal reflection of a second portion of the first light within the flexible substrate and extract the second portion from the flexible substrate. The outcoupling layer can be further configured to eliminate air gaps at an interface between the outcoupling layer and a surface to be illuminated by the extracted second portion in response to the FEE device being substantially conformally placed on the surface.
H10K 50/858 - Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
C09K 11/62 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing gallium, indium or thallium
B32B 15/04 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance
B32B 15/09 - Layered products essentially comprising metal comprising metal as the main or only constituent of a layer, next to another layer of a specific substance of synthetic resin comprising polyesters
B32B 17/06 - Layered products essentially comprising sheet glass, or fibres of glass, slag or the like comprising glass as the main or only constituent of a layer, next to another layer of a specific substance
Provided are core/shell type semiconductor nanoparticles including: a core including In and P; and a shell having one or more layers. The semiconductor nanoparticles further include at least Zn, Se, and at least one halogen. In the semiconductor nanoparticles, molar ratios of P, Zn, Se, and halogen each relative to In in terms of atoms are P: 0.20˜0.95, Zn: 11.00˜50.00, Se: 7.00˜25.00, and halogen: 0.80˜15.00. According to the present invention, core/shell type semiconductor nanoparticles that include the core including In and P and the shell including Zn and Se as main components, and have high quantum yield, a small full width at half maximum, and small Stokes shift can be provided.
C09K 11/88 - Luminescent, e.g. electroluminescent, chemiluminescent, materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
2 (MPa) of a solvent at the heating temperature T. According to the present invention, a method for producing particles having a narrow particle size distribution with high production efficiency can be provided.
B01J 2/00 - Processes or devices for granulating materials, in generalRendering particulate materials free flowing in general, e.g. making them hydrophobic
B01J 19/00 - Chemical, physical or physico-chemical processes in generalTheir relevant apparatus
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
Disclosed are stable films comprising Ag, In, Ga, and S (AIGS) nanostructures, or more one metal alkoxides, one or more metal alkoxide hydrolysis products, one or more metal halides, one or more metal halide hydrolysis products, one or more organometallic compounds, or one or more organometallic hydrolysis products, or combinations thereof, and at least one ligand bound to the nanostructures. In some embodiments, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm. In some embodiments, the nanostructures have a photon conversion efficiency (PCE) of at least 30% after being stored for 24 hours under yellow light and air storage conditions.
C01G 15/00 - Compounds of gallium, indium, or thallium
G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
87.
Electroluminescent devices with hybrid organic-inorganic transport layers
Embodiments of an electroluminescent device are described. The electroluminescent device includes a substrate, a first electrode disposed on the substrate, an emission layer comprising luminescent nanostructures disposed on the first electrode, a hybrid transport layer disposed on the emission layer, and a second electrode disposed on the hybrid transport layer. The hybrid transport layer includes an organic layer and inorganic nanostructures disposed within the organic layer. The luminescent nanostructures are separated from the inorganic nanostructures by the organic layer.
H10K 50/11 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
Embodiments of an electroluminescent device are described. The electroluminescent device includes a substrate, a first electrode disposed on the substrate, a first transport layer disposed on the first electrode, an emission layer having luminescent nanostructures disposed on the first transport layer, a second transport layer having an organic layer, and a second electrode disposed on the second transport layer. A first portion of the organic layer is disposed on the emission layer and a second portion of the organic layer is disposed on the first transport layer.
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising polythiol ligands with pendant moieties. The polythiol ligand with pendant moieties increase the solubility of the nanostructures in solvents and resins. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.
C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
B82Y 40/00 - Manufacture or treatment of nanostructures
C07C 319/18 - Preparation of thiols, sulfides, hydropolysulfides or polysulfides of sulfides by addition of thiols to unsaturated compounds
C07C 323/22 - Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and doubly-bound oxygen atoms bound to the same carbon skeleton
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 1/10 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material
B22F 1/102 - Metallic powder coated with organic material
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
The present invention provides a silver paste containing at least a silver powder, a binder resin, and an organic solvent, wherein the silver powder contains a first silver powder having a D50 of 3.50 to 7.50 μm and a second silver powder having a D50 of 0.80 to 2.00 μm, where D50 represents a 50% value of a volume-based cumulative fraction obtained by laser diffraction particle size distribution measurement; a copper content of the whole silver powder is 10 to 5000 ppm by mass; a copper content of the second silver powder is 80 ppm by mass or more; and the first silver powder contains substantially no copper. The present invention provides a silver paste containing a powder in a high concentration and excellent in printability, and provides a silver conductor film that has a high filling factor, a high film density, high electrical conductivity, and excellent migration resistance.
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
C09D 11/033 - Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
C09D 11/037 - Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
The invention is in the field of nanostructure synthesis. Provided are highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core/shell and a thin metal oxide on the outer shell of the nanostructure. Also provided are methods of preparing the nanostructures, films comprising the nanostructures, and devices comprising the nanostructures.
3 or more. The present invention can provide a silver paste containing a powder in a high concentration and excellent in printability, and accordingly provide a silver conductor film that has a high filling factor and a high film density, exhibits high electrical conductivity, and is excellent in migration resistance.
B22F 1/107 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 1/05 - Metallic powder characterised by the size or surface area of the particles
B22F 1/052 - Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
B22F 1/06 - Metallic powder characterised by the shape of the particles
B22F 1/102 - Metallic powder coated with organic material
B22F 1/103 - Metallic powder containing lubricating or binding agentsMetallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
B32B 5/16 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer formed of particles, e.g. chips, chopped fibres, powder
F21V 9/30 - Elements containing photoluminescent material distinct from or spaced from the light source
B32B 9/04 - Layered products essentially comprising a particular substance not covered by groups comprising such substance as the main or only constituent of a layer, next to another layer of a specific substance
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.
H01L 51/50 - Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H01L 51/56 - Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H10K 50/115 - OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
222 per 100.0 parts by mass of the electroconductive powder (A) mainly comprising Ni. Through the present invention, it is possible to provide a Ni paste for an internal electrode, whereby high-temperature load service life can be improved without reducing the continuity of an electrode film.
Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices.
B32B 5/16 - Layered products characterised by the non-homogeneity or physical structure of a layer characterised by features of a layer formed of particles, e.g. chips, chopped fibres, powder
B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals
F21V 8/00 - Use of light guides, e.g. fibre optic devices, in lighting devices or systems
B32B 9/04 - Layered products essentially comprising a particular substance not covered by groups comprising such substance as the main or only constituent of a layer, next to another layer of a specific substance
F21V 9/30 - Elements containing photoluminescent material distinct from or spaced from the light source
A method for manufacturing an electronic component, characterized by having: a preparation step for preparing an electrode-forming body for an electronic component; and an electrode-forming step for forming an electrode on the outer surface of the electrode-forming body for an electronic component, an electrically conductive resin layer being formed on the electrode-forming body for an electronic component in the electrode-forming step, using an electrically conductive resin composition containing silicone resin. In the present invention, it is possible to provide the method for manufacturing an electronic component having high moisture resistance. Alternatively, it is possible to provide the method for manufacturing an electronic component that, in addition to having high moisture resistance, has few restrictions in terms of design and manufacturing, thus having high manufacturing efficiency.
H01G 13/00 - Apparatus specially adapted for manufacturing capacitorsProcesses specially adapted for manufacturing capacitors not provided for in groups
This manufacturing method for an electronic component is characterized by the following: having a preparation step for preparing an electronic component-use electrode formation body, and an electrode formation step for forming an electrode on an outer surface of the electronic component-use electrode formation body; and in the electrode formation step, an electroconductive resin composition is used to form an electroconductive resin layer on the electronic component-use electrode formation body, the electroconductive resin composition containing a metal powder, a resin binder, and an organic solvent, 20.0 mass% or greater of the metal powder being a flaky metal powder, and 70.0 mass% or greater of the resin binder being a silicone resin. According to the present invention, it is possible to provide a manufacturing method for an electronic component that, in addition to having a high durability to moisture, has a high manufacturing efficiency with few design- and manufacturing-based restrictions.
C08L 83/06 - Polysiloxanes containing silicon bound to oxygen-containing groups
C08L 63/00 - Compositions of epoxy resinsCompositions of derivatives of epoxy resins
H01G 13/00 - Apparatus specially adapted for manufacturing capacitorsProcesses specially adapted for manufacturing capacitors not provided for in groups
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
25255 per 100.0 parts by mass of the conductive powder (A) that is mainly composed of Ni, (D3) a stabilized zirconia (SZ) in an amount within the range of from 0.05 × 10-2to 2.20 × 10-2233 per 100.0 parts by mass of the conductive powder (A) that is mainly composed of Ni. The present invention is able to provide an Ni paste for internal electrodes, said Ni paste being capable of improving the high temperature load life without lowering the continuity of an electrode film.
H01B 1/22 - Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
C04B 35/468 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
