A method is provided for reconstructing images or video from output of neuromorphic vision (NMV) sensors in a low-light environment. The method includes passively sensing light by an array of NMV sensors in the low-light environment, integrating the sensed light by each of the NMV sensors, outputting a time-stamped event signal per sensor of the array of NMV sensors upon a value of the integration exceeding a threshold value, resetting each NMV sensor after outputting an event signal for new integration of sensed light, combining the event signals, and reconstructing an image and/or video based on the combined event signals.
H04N 23/13 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from different wavelengths with multiple sensors
H04N 17/00 - Diagnosis, testing or measuring for television systems or their details
H04N 23/80 - Camera processing pipelinesComponents thereof
A pixel system for an imaging device can include one or more pixels comprising a pulse trigger assembly configured to detect a pulse at one or more threshold voltages, a timer system forming part of and/or connected to the one or more pixels, the timer system comprising one or more trigger switches. The pulse trigger assembly can be configured to activate the one or more trigger switches in response to detecting the pulse at the one or more threshold values. The pixel system can include a time-of-flight (TOF) module operatively connected to the one or more pixels and/or the timer system to determine a TOF based on an output from the timer system while simultaneously performing either or both passive imaging and asynchronous laser pulse detection.
A time-of-flight sensor threshold circuit outputs a threshold voltage to a time-of-flight sensor, the threshold reducing over the duration of a time-of-flight measurement, which reduction can occur continually during the measurement. The circuit is provided with an initial threshold voltage portion to set the threshold voltage corresponding to a selected maximum threshold value, a time-dependent portion, to charge and discharge over time, to or from a current control portion, a threshold voltage ramp control portion to lower the threshold value over time by charging or discharging the time-dependent portion to or from the current control portion at a selected rate, and a synchronizing portion to synchronize current flow to or from the current control portion with a synchronizing input signal synchronized with an illumination pulse from a connected illuminator.
G01S 7/4865 - Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
G01S 17/14 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves wherein a voltage or current pulse is initiated and terminated in accordance with the pulse transmission and echo reception respectively, e.g. using counters
A system includes a die with a first plurality of hybridization bumps extending therefrom, electrically connected to circuitry die. An external circuitry component with a second plurality of hybridization bumps extending therefrom, electrically connected to circuitry in the external circuitry component. The first plurality of hybridization bumps and the second plurality of hybridization bumps are pressed together for electrical communication between the die and the external circuitry component. The first plurality of hybridization bumps have a different material hardness from the second plurality of hybridization bumps. The first plurality of hybridization bumps have a different bump diameter from that of the second plurality of hybridization bumps.
A photodetector array (PDA) system includes metal traces. A dielectric passivation layer defines a front side of a stack. An absorption layer is on a back side of the stack relative to the dielectric passivation layer. An array of pixels is included, each having a respective diffusion feature between the dielectric passivation layer and the absorption layer. The diffusion features are operatively connected to the absorption layer for photodetection. A metal trace runs between respective diffusion features. The metal trace is at a depth in the stack closer to the front side of the stack than the absorption layer. The dielectric passivation layer electrically insulates the metal trace from a front side surface of the stack.
A system for aligning components of an imaging device includes an imaging device, and a test camera. The imaging device includes a lens and a focal plane array (FPA). The FPA defines an optical axis and includes at least two test elements configured and adapted to emit a light through the lens. The test camera is configured and adapted to be mounted to and pre-aligned with the lens of the imaging device to receive a light from the at least two test elements.
In accordance with at least one aspect of this disclosure, a photodiode structure can include a charge layer comprised of undoped InP, and a detector active area forming a junction with the charge layer and having edges configured to prevent edge breakdown. The location of the junction can be controlled through a diffusion of the detector active area or through an epitaxially grown doped region, for example. The photodiode structure can also include a charge control layer comprised of doped InP. The charge control layer can include a thickness and carrier concentration configured to achieve a predetermined gain, high speed, low dark current, and low break down voltage.
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
8.
Visible-swir hyper spectral photodetectors with reduced dark current
A method includes forming an assembly of layers including an InP cap layer on an InGaAs absorption region layer, wherein the InGaAs layer is on an n-InP layer, and wherein an underlying substrate layer underlies the n-InP layer. The method includes removing a portion of the InP cap and n-InP layer by dry etching.
H01L 31/0232 - Optical elements or arrangements associated with the device
H01L 31/101 - Devices sensitive to infrared, visible or ultraviolet radiation
H01L 31/08 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
9.
Imaging while simultaneously detecting, tracking and decoding multiple coded laser spots
A system comprises a photodetector array (PDA) including a plurality of imaging pixels configured to generate electrical signals indicative of an imaged scene, and an integrated circuit (IC) operatively connected to the PDA to receive the electrical signals from the imaging pixels to form image data.
A method of medical imaging is provided. The method includes receiving pulsed light emissions from fluoroscopic material in a target field of a patient, wherein the target field was treated with fluoroscopic material that emitted the pulsed light emissions in response to a pulsed laser signal. The pulsed laser signal has a wavelength that was selected to excite the fluoroscopic material. The method further includes capturing a passive image of the target field and asynchronously detecting pulses of the pulsed light emissions. The method further includes determining pulse-source coordinates in the image, wherein the pulse-source coordinates correspond to a location of the fluoroscopic material that emitted the pulsed light emissions.
A system includes a pixel having a diffusion layer within a cap layer. The diffusion layer defines a front side and an illumination side opposite the front side with an absorption layer operatively connected to the illumination side as well as the diffusion and cap layers. A set of alternating oxide and nitride layers are deposited on the front side of the cap and diffusion layers.
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
H01L 31/105 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
H01L 31/107 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
A pixel system for an imaging device can include one or more pixels comprising a pulse trigger assembly configured to detect a pulse at one or more threshold voltages, a timer system forming part of and/or connected to the one or more pixels, the timer system comprising one or more trigger switches. The pulse trigger assembly can be configured to activate the one or more trigger switches in response to detecting the pulse at the one or more threshold values. The pixel system can include a time-of-flight (TOF) module operatively connected to the one or more pixels and/or the timer system to determine a TOF based on an output from the timer system while simultaneously performing either or both passive imaging and asynchronous laser pulse detection.
A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.
A system includes a pixel including a diffusion layer in contact with an absorption layer. The diffusion layer and absorption layer are in contact with one another along an interface that is inside of a mesa. A trench is defined in the absorption layer surrounding the mesa. An overflow contact is seated in the trench.
A sensor includes a sensor array. The sensor array includes a plurality of passive imaging pixels and a plurality of time of flight (TOF) imaging pixels. A method of imaging includes collecting passive imaging data from a sensor array and collecting time of flight (TOF) imaging data from the sensor array. Collecting passive imaging data and collecting TOF imaging data can be performed at least partially at the same time and along a single optical axis without parallax.
H04N 25/76 - Addressed sensors, e.g. MOS or CMOS sensors
G01S 7/4865 - Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
H04N 23/45 - Cameras or camera modules comprising electronic image sensorsControl thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images
16.
System and method of sensing for petroleum, oil, and gas leaks using optical detection
A system for remote detection of fluid leaks from a natural gas or oil pipeline including a laser light source for detecting a methane leak while sweeping in multiple directions, a Midwave Infrared (MWIR) detector optically coupled with the laser light source and a controller operatively connected to the laser light source and the MWIR detector for aggregating data collected by the laser light source and the MWIR using a nuropmophic flow detection algorithm including computational fluid dynamic models.
G01N 21/27 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection
17.
Neuromorphic vision with frame-rate imaging for target detection and tracking
An imaging system and a method of imaging are provided. The imaging system includes a single optics module configured for focusing light reflected or emanated from a dynamic scene in the infrared spectrum and a synchronous focal plane array for receiving the focused light and acquiring infrared images having a high spatial resolution and a low temporal resolution from the received focused light. The imaging system further includes an asynchronous neuromorphic vision system configured for receiving the focused light and acquiring neuromorphic event data having a high temporal resolution, and a read-out integrated circuit (ROIC) configured to readout both the infrared images and event data.
A method includes flashing an object with a first illumination pulse at a first illumination power level, flashing the object with a second illumination pulse at a second illumination power level different from the first illumination power level, integrating at least a portion of a first return pulse which is the first illumination plus returning from the object to determine a first return time, and integrating at least a portion of a second return pulse which is the second illumination pulse returning from the object to determine a second return time. The method includes using the first and second return times to determine distance to the object independent of reflectivity of the object.
A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/00 - Details of semiconductor or other solid state devices
An optical assembly includes a window having an interior surface and an opposed exterior surface. A perimeter surface connects between the interior surface and the exterior surface. A metal layer is bonded to the perimeter surface of the window. An anti-reflective coating (ARC) is bonded to the interior surface of the window. A metallic lid is joined to the metal layer for enclosing a focal plane array (FPA) aligned with the window.
A method of forming bump structures for interconnecting components includes applying an insulating layer over a device substrate, coating the insulating layer with a dielectric material layer, forming a pattern with photolithography on the dielectric material layer, etching the dielectric material layer to transfer the pattern to the insulating layer, etching the insulating layer to form pockets in the insulating layer following the pattern, applying photolithography to and etching the dielectric material layer to reduce overhang of the dielectric material layer relative to the insulating layer, removing material from top and side walls of the pockets in the insulating layer, and depositing electrically conductive bump material in the pattern so a respective bump is formed in each pocket.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
23.
Sensors for simultaneous passive imaging and range finding
A sensor includes a sensor array. The sensor array includes a plurality of passive imaging pixels and a plurality of time of flight (TOF) imaging pixels. A method of imaging includes collecting passive imaging data from a sensor array and collecting time of flight (TOF) imaging data from the sensor array. Collecting passive imaging data and collecting TOF imaging data can be performed at least partially at the same time and along a single optical axis without parallax.
A pixel includes a constant current source electrically connected to a first node. An integrating capacitor is electrically connected between the first node and a ground. A sampling transistor is electrically connected between the first node and a second node. A photodiode is electrically connected between a base terminal of the sampling transistor and the ground for switching electrical connectivity through the sampling transistor in response to radiation incident on the photodiode.
An eyecup for an optic can include an elastic body forming an eye receiver and a viewing cavity, the elastic body configured to move between a relaxed state and a compressed state. The eyecup can include a diaphragm formed from or attached to an inner surface of the elastic body, the diaphragm including one or more flaps configured to be in a closed position when the elastic body is in the relaxed state such that the one or more flaps block sight of an optic through the viewing cavity, and to be in an open position when the elastic body is in the compressed state such that the one or more flaps allow sight of an optic through the viewing cavity. The eyecup can include one or more magnets disposed on at least one of the one or more flaps to move with the one or more flaps, and one or more sensors disposed in a fixed location and configured to sense a magnetic field or flux thereof of the one or more magnets to sense the one or more magnets when the flaps are in or near or moving toward the open position.
A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.
H01L 25/16 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different subclasses of , , , , or , e.g. forming hybrid circuits
H01L 23/488 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions
H01L 23/00 - Details of semiconductor or other solid state devices
An eyecup (100) for an optic includes an elastic body (101) forming an eye receiver (103) and a viewing cavity (105), the elastic body configured to move between a relaxed state (fig 1) and a compressed state (fig 3); and a diaphragm (107) formed from or attached to an inner surface (109) of the elastic body, the diaphragm including one or more flaps (111) configured to be in a closed position when the elastic body is in the relaxed state such that the one or more flaps block sight of an optic through the viewing cavity, and to be in an open position when the elastic body is in the compressed state such that the one or more flaps allow sight of an optic through the viewing cavity and one or more magnets (113) are sensed by one or more sensors (115) to activate an optic display (501).
A method of image enhancement includes constructing an input histogram corresponding to an input image received at a focal plane array. The method includes performing histogram equalization on a first band of the input histogram starting from a zero value and ending at a division value representing a pixel bin value where a predetermined fraction of the input histogram by pixel hound is reached to produce a first portion of an equalization curve. The method includes performing histogram equalization on a second band of the input histogram starting from the division value and ending at a pixel bin value where all of the input histogram by pixel count is reached to produce a second portion of the equalization curve. The method includes applying the equalization curve to the input image to produce a corresponding enhanced image.
An identification system for a digital air traffic control center includes a sensor with a field of view and having a pulse detection array, a user interface to display air traffic objects in the field of view of the sensor, and a controller. The controller includes a pulse detection module disposed in communication with the pulse detection array to identify an air traffic object using pulsed illumination emitted by a pulsed illuminator carried by the air traffic object within the field of view of the sensor. Digital air traffic control centers, airfields, and air traffic object identification methods are also described.
A laser alignment arrangement includes a first stage configured to structurally support a laser at a first longitudinal position of the laser, the first stage being configured to adjust the first longitudinal position of the laser in at least one direction orthogonal to an axis of the laser, and a second stage configured to structurally support the laser at a second longitudinal position of the laser, the second stage being configured to adjust the second longitudinal position of the laser in at least one direction orthogonal to the axis of the laser.
A tactical rail for a firearm includes a rail body having a receiver end and a muzzle end, a non-contact optical connection, and a high speed data spoke. The non-contact optical connection is arranged at an end of the rail body and is configured to interface with a corresponding non-contact optical interface. The high speed data spoke is connected to the non-contact optical connection for high speed data communication through the non-contact optical connection and the corresponding non-contact optical interface. Tactical rail arrangements and firearm with tactical rails and tactical rail arrangements are also described.
A tactical rail for a firearm includes a rail body having a receiver end and a muzzle end, a non-contact optical connection, and a high speed data spoke. The non-contact optical connection is arranged at an end of the rail body and is configured to interface with a corresponding non-contact optical interface. The high speed data spoke is connected to the non-contact optical connection for high speed data communication through the non-contact optical connection and the corresponding non-contact optical interface. Tactical rail arrangements and firearm with tactical rails and tactical rail arrangements are also described.
THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE ARMY (USA)
Inventor
Neal, Henry, William
Sproul, Mark
Abstract
A tactical rail for a firearm includes a rail body having a receiver end and a muzzle end and a non-contact optical connection arranged at an end of the rail body and configured to interface with a corresponding non-contact optical interface. A low speed data bus segment extends between the receiver end and the muzzle end of the rail body. A high speed data spoke is connected to the non-contact optical connection for high speed data communication with a high speed data accessory through the non-contact optical connection and the corresponding noncontact optical interface. Tactical rail systems and firearm assemblies having tactical rails are also described.
A photodiode includes an absorption layer. A cap layer is disposed on a surface of the absorption layer. A pixel diffusion area within the cap layer extends beyond the surface of the absorption layer and into the absorption layer to receive a charge generated from photons therefrom. A mesa trench is defined through the cap layer surrounding the pixel diffusion area, wherein the mesa trench defines a floor at the surface of the absorption layer and opposed sidewalls extending away from the surface of the absorption layer. An implant is aligned with the mesa trench and extends from the floor of the mesa trench through the absorption layer surrounding a portion of the absorption layer proximate the pixel diffusion area.
H01L 31/109 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/0304 - Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
A method of determining the composition of a polymeric body includes applying electromagnetic radiation to the polymeric body, modulating the electromagnetic radiation using a tagant disposed within a polymer composition forming the polymeric body, and receiving the modulated electromagnetic radiation from the tagant at an infrared detector. The electromagnetic radiation received from the tagant has a signature corresponding to the polymer composition forming the polymeric body. A method of making a polymeric body and system for determining composition of a polymeric body are also described.
C08K 11/00 - Use of ingredients of unknown constitution, e.g. undefined reaction products
G01N 21/25 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
C08J 3/20 - Compounding polymers with additives, e.g. colouring
G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
C08J 3/22 - Compounding polymers with additives, e.g. colouring using masterbatch techniques
G01N 21/3563 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solidsPreparation of samples therefor
A configurable analog to digital converter (ADC) is provided. The configurable ADC includes a comparator receiving and comparing a first analog voltage signal to a second analog voltage signal V-DAC and outputting a signal C-OUT that is responsive to a result of the comparison, an integrator operating on C-OUT and outputting an N-bit value, a digital-to analog converter (DAC) converting the N-bit value to the second analog voltage signal V-DAC, and an integrator, the integrator including the N-bit memory, which is coupled to an arithmetic logic unit (ALU), the N-bit memory and ALU cooperating to perform operations using both the N-bit value and C-OUT. The configurable ADC is configured to operate in more than one mode selected from a plurality of selectable ADC modes.
H03M 1/46 - Analogue value compared with reference values sequentially only, e.g. successive approximation type with digital/analogue converter for supplying reference values to converter
A pixel of a pixel array is provided. The pixel includes a low frequency path configured to receive an input signal from a corresponding photodetector. The low frequency path includes a passive imaging circuit provided along the low frequency path, the passive imaging circuit configured to output an analog imaging signal and a flash analog to digital converter (ADC) that receives the analog imaging signal and processes the analog imaging signal to output a coarse digitized signal.
H04N 5/374 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
An imaging method includes assigning pixels within the extent of a focal plane array active area to a first readout range and a second readout range. Image data is read out from the pixels assigned to the first readout range and the second readout range. Pixels located within the extend of the focal plane array active area and not assigned to the first readout range or the second readout range are left unread. Imaging systems and hyperspectral imaging arrangements are also described.
A method of forming bump structures for interconnecting components includes applying an insulating layer over a device substrate, coating the insulating layer with a dielectric material layer, forming a pattern with photolithography on the dielectric material layer, etching the dielectric material layer to transfer the pattern to the insulating layer, etching the insulating layer to form pockets in the insulating layer following the pattern, applying photolithography to and etching the dielectric material layer to reduce overhang of the dielectric material layer relative to the insulating layer, removing material from top and side walls of the pockets in the insulating layer, and depositing electrically conductive bump material in the pattern so a respective bump is formed in each pocket.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
H01L 23/13 - Mountings, e.g. non-detachable insulating substrates characterised by the shape
A method of digitally boresighting includes finding a laser spot in a field of view of an imaging device that has an optical center, wherein the laser spot is generated by a laser, determining an offset vector between the laser spot in the field of view and the optical center, and correcting for boresight misalignment of the laser and imaging device in the image on a display using the offset vector.
A modular digital optical gunsight (MDOG) peripheral module validation device includes an MDOG data connector configured to connect to an MDOG peripheral module and to receive and/or transmit MDOG data in a first format to or from the MDOG peripheral module, a translation module configured to translate the MDOG data in the first format to a second format that is compatible with a personal computer (PC), and a PC data connector configured to connect the validation device to a PC and to receive and/or transmit the MDOG data in the second format to the PC. The translation module can be configured to translate data in the second format to the first format.
An imaging device includes a camera and an illuminator. The illuminator is positioned and configured to illuminate an article through an illuminator tunable filter disposed along an optical axis and capture an image of the article through a camera tunable filter arranged along the optical axis. Imaging arrangements and imaging methods are also described.
A multimode pixel of a pixel array is provided. The multimode pixel includes a photodetector, an image sensing circuit having a first plurality of transistors, and a laser range finding (LRF) circuit having a second plurality of transistors. At least one transistor of the second plurality of transistors, but not all of the second plurality of transistors, is included in the first plurality of transistors. The LRF circuit being configured to perform LRF operations and the image sensing circuit is configured to perform passive imaging operations. The image sensing circuit and the LRF circuit are configured to perform concurrently.
G01S 17/02 - Systems using the reflection of electromagnetic waves other than radio waves
G01S 17/10 - Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
H04N 5/374 - Addressed sensors, e.g. MOS or CMOS sensors
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
G01S 17/89 - Lidar systems, specially adapted for specific applications for mapping or imaging
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
44.
Pixel output processing circuit with laser range finding (LRF) capability
A pixel output processing circuit of a focal plane array (FPA) having a plurality of laser range finding pixels (LRF) is provided. The respective LRF pixels output a high frequency analog signal in response to sensing a reflected laser pulse. The pixel output processing circuit includes a common net and a detection circuit. The common net is connected to a amplifying transistor of each of the LRF pixels for receiving analog signals output from the respective LRF pixels. The detection circuit is coupled to the common net and outputs a pulse flag in response to detecting that a high frequency analog signal has been received by the common net.
An optics arrangement includes a polarized beam splitter arranged along an collection axis, a first quarter waveplate arranged along the collection axis, and a second quarter waveplate. The second quarter waveplate is arranged along the collection axis and is optically coupled to the first quarter waveplate by the polarized beam splitter to limit return of polarized illumination originating in a scene being illuminated for retroreflector detection. Retroreflector detectors and methods of imaging a scene are also described.
G02B 27/28 - Optical systems or apparatus not provided for by any of the groups , for polarising
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02B 6/126 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
G02B 6/27 - Optical coupling means with polarisation selective and adjusting means
G01B 11/03 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness by measuring coordinates of points
G01N 21/78 - Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
An imaging method includes imaging a scene having a pulsed light source and associating a symbol with the light source. The image is enhanced by inserting a symbol into the image indicative of location of the pulsed light source in the scene. The symbol overlays the image in spatial registration with the location of the pulsed light source in the scene to augment indication of the location provided by the pulsed light source. Imaging systems are also described.
A method of forming bump structures for interconnecting components includes dry etching a layer of insulating material to create a pattern for bump structures. A seed layer is deposited on the insulating material over the pattern. The seed layer is patterned with a photo resist material. The method also includes forming bump structures over the seed layer and the photo resist material with a plating material to form bump structures in the pattern, wherein the bump structures are isolated from one another.
A method of navigating an autonomous vehicle includes receiving pulsed illumination from an object in the vehicle environment and decoding the pulsed illumination. The object is identified using the decoded pulsed illumination of the pulsed illumination, and the autonomous vehicle navigated through the vehicle environment based on the identification of the object. Obstacle avoidance methods and navigation systems for autonomous vehicles are also described.
A method of enhancing an image includes constructing an input histogram corresponding to an input image received at a focal plane array, the input histogram representing a pixel intensity distribution corresponding to the input image and performing an analytical operation on the input histogram to produce a modified cumulative distribution, wherein the analytical operation is a function of camera temperature. The input image is transformed using the modified cumulative distribution to produce an enhanced output image corresponding to the input image, wherein at least a portion of the input image is enhanced in the output image. In addition to or in lieu of the non-linear operation, the binning edges of the input histogram can be adjusted based on at least one of camera temperature and sensitivity state to construct an adjusted cumulative distribution.
A method of threat detection includes illuminating a scene with short-wavelength infrared (SWIR) illumination and receiving a return of the SWIR illumination reflected back from the scene. The method includes analyzing the return of the SWIR illumination to detect presence of man-made optics in the scene. Illuminating, receiving, and analyzing can be performed by a device, e.g., a rifle-mounted laser device.
A method of focusing an imaging device includes acquiring an image. A determination is made whether contrast difference between a pixel and one or more adjacent pixels is likely due to noise, or whether the contrast difference is due to the image being out-of-focus. Focus of the imaging device is when the contrast difference is due to the image being out-of-focus while contrast difference determined to likely be due to noise is ignored.
A method of correcting lag in an imaging pixel includes receiving a current frame pixel value and determining a current filter coefficient using the current frame pixel value. A pixel output is determined from a product of the current frame pixel value and current frame filter coefficient. The product of a first prior frame pixel value and corresponding first prior frame filter coefficient is added to the pixel output to generate a corrected pixel output to more closely indicates incident illumination on the imaging pixel during an integration period from which the current frame pixel value was obtained.
H04N 5/359 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
H04N 5/217 - Circuitry for suppressing or minimising disturbance, e.g. moire or halo in picture signal generation
53.
Digital ROIC enhancement and repetition frequency decoding of asychronous laser pulses
A method includes acquiring a pulse detection bitmap from an imaging sensor array into a digital read out integrated circuit (DROIC), filtering the pulse detection bitmap within the DROIC to convert the pulse detection bitmap into a filtered pulse detection bitmap, and determining for a given pixel in the filtered pulse detection bitmap whether the pixel has a value that exceeds a threshold, indicating a true laser pulse return has been detected in the pixel.
A bayonet mounting system includes an interchangeable component. The system also includes a housing having a cylindrical opening with a sealing surface on a radially inward facing surface and a frustoconical surface that tappers radially outwardly from the radially inward facing surface at the cylindrical opening. The frustoconical surface is configured to radially compress at least a portion of a resilient member during attachment of the interchangeable component to the housing. The housing also has a groove extending radially outward of at least a portion of the frustoconical surface configured to retain the interchangeable component to the housing in a bayonet latching fashion.
A non-transitory computer readable medium including computer executable instructions for performing a method that includes locating a pulsing laser on an imaging array, defining a sub-region array smaller than the imaging array based on a location of the located pulsing laser such that the pulsing laser is at least partly within the sub-region, and sampling the sub-region array at a sub-region sampling rate that is higher than a remainder region sampling rate.
An imaging pixel includes a photodetector for generating a charge signal, an input buffer, a control device, and a switch. The input buffer is connected to the photodetector for amplifying the charge signal. The control device is connected to the photodetector and the input buffer to separate high-frequency charge signals from low frequency charge signals. The switch is operably connected to the input buffer for sampling of high-frequency charge signals in a charge storage device triggered by amplitude of high-frequency charge signals provided by the input buffer.
A method includes correcting for at least one of gain and offset during frame integration for photodetector events. Gain and offset correction is performed separately in each pixel of a digital read-out integrated circuit (DROIC) for a plurality of corresponding pixels in a photodetector array. First and second binary counters respectively use a gain register and an offset register to implement gain and offset correction.
An imaging apparatus includes a camera with a solid-state sensor and an illumination selector. The illumination selector is arranged for optical coupling with the sensor and arranged for communicating electromagnetic radiation within a shortwave infrared narrowband to the sensor. The shortwave infrared narrowband includes a peak absorption or peak reflection wavelength of moisture to infrared illumination to image moisture disposed within a solar cell array.
G01N 21/3554 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for determining moisture content
59.
Bump structures for interconnecting focal plane arrays
A method of forming bump structures for interconnecting components includes dry etching a layer of insulating material to create a pattern for bump structures. A seed layer is deposited on the insulating material over the pattern. The seed layer is patterned with a photo resist material. The method also includes forming bump structures over the seed layer and the photo resist material with a plating material to form bump structures in the pattern, wherein the bump structures are isolated from one another.
An electronic device sealing arrangement includes a housing, an access door, a sealing member sized and configured to be sealingly compressed between the access door and the housing, a latch in operable communication with the housing and the access door, the latch being configured to compress the sealing member between the access door and the housing when moved to a position that latches the access door in a closed position, and a resilient member in operable communication with the latch and at least one of the housing and the access door, the resilient member being configured to at least partially compress when the access door is latched in the closed position and the sealing member is compressed between the access door and the housing.
An imaging system includes a readout integrated circuit (ROIC) is operatively connected to receive photocurrent from a plurality of photodetectors (e.g., from a plurality of photodetectors of a photodetector array (PDA)). An event detection circuit in each ROIC pixel readout circuit generates binary output data, wherein the ROIC compresses the binary output data with a logical summary binning of N×M pixel binary outputs into a single summary output bit. The ROIC can be configured to receive image data from the photodetectors to form an image at a first frame rate, and to receive the binned binary data from the photodetectors at a second frame rate higher than the first frame rate.
H04N 5/347 - Extracting pixel data from an image sensor by controlling scanning circuits, e.g. by modifying the number of pixels having been sampled or to be sampled by combining or binning pixels in SSIS
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
An imaging method includes receiving electromagnetic radiation at a focal plane array of a handheld device. The electromagnetic radiation is processed within the handheld device, and visible images are displayed on the handheld device. The displayed visible images are indicative of a scene, and include a designator and a designator identifier when a high frequency laser pulse is in the scene. The designator and designator identifier represent the high frequency pulsed electromagnetic radiation received by the focal plane array when a high frequency pulse is present in the scene.
G01S 5/16 - Position-fixing by co-ordinating two or more direction or position-line determinationsPosition-fixing by co-ordinating two or more distance determinations using electromagnetic waves other than radio waves
G01S 7/48 - Details of systems according to groups , , of systems according to group
G01J 5/00 - Radiation pyrometry, e.g. infrared or optical thermometry
A method of inspecting a silicon article includes irradiating a silicon article with infrared radiation, transmitting a portion of the infrared radiation through the silicon article, and filtering the infrared radiation transmitted through the silicon article. Image data is acquired from the filtered infrared radiation and an image of the silicon article reconstructed from the image data. Based on the reconstructed image of the silicon article, one or more anomalies defined within the silicon article are identified.
G01N 21/3563 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solidsPreparation of samples therefor
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
A laser alignment arrangement includes a first stage configured to structurally support a laser at a first longitudinal position of the laser, the first stage being configured to adjust the first longitudinal position of the laser in at least one direction orthogonal to an axis of the laser, and a second stage configured to structurally support the laser at a second longitudinal position of the laser, the second stage being configured to adjust the second longitudinal position of the laser in at least one direction orthogonal to the axis of the laser.
An imaging sensor includes an imaging array with a plurality of pixels. A sub-set of the pixels are marker pixels configured to each provide a constant respective output value to embed an orientation and alignment marker in images produced with the imaging array. The marker pixels can be sparsely distributed across the imaging array.
A multimode pixel of a pixel array is provided. The multimode pixel includes a photodetector, an image sensing circuit, a pulse detection circuit, and an image readout path coupled between the image sensing circuit and at least one readout conductor of the pixel array to transmit image signals from the image sensing circuit to the at least one readout conductor. The multimode pixel further includes a pulse readout path different from the image readout path, wherein the pulse readout path is coupled between the pulse detection circuit and the at least one readout conductor to transmit pulse data from the pulse detection circuit to the at least one readout conductor, and wherein the image readout path is controlled independently from the pulse readout path.
A method of enhancing an image includes constructing an input histogram corresponding to an input image received at a focal plane array, the input histogram representing a pixel intensity distribution corresponding to the input image and performing an analytical operation on the input histogram to produce a modified cumulative distribution, wherein the analytical operation is a function of camera temperature. The input image is transformed using the modified cumulative distribution to produce an enhanced output image corresponding to the input image, wherein at least a portion of the input image is enhanced in the output image. In addition to or in lieu of the non-linear operation, the binning edges of the input histogram can be adjusted based on at least one of camera temperature and sensitivity state to construct an adjusted cumulative distribution.
A digital communication interface includes a deserializer module, a gearbox module, and a parallel communication channel connecting the gearbox module to the deserializer module. The deserializer module has a fixed deserialization factor. The gearbox module has a temporal translation factor to change bit-length of words received through the parallel communication channel to bit-length suitable for a downstream data path.
H03M 9/00 - Parallel/series conversion or vice versa
G06F 5/06 - Methods or arrangements for data conversion without changing the order or content of the data handled for changing the speed of data flow, i.e. speed regularising
A method for diagnosing a condition of a subject includes imaging an abdominal area of the subject to obtain one or more images of the abdominal area. Separation between rectus abdominis muscles in the abdominal area is located from the one or more images. Distance of the separation between the rectus abdominis muscles is quantified. The results of the quantified distance and one or more images are outputted on one or more display units.
A61B 5/107 - Measuring physical dimensions, e.g. size of the entire body or parts thereof
G01N 21/359 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using near infrared light
G01N 21/3563 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solidsPreparation of samples therefor
G06T 7/73 - Determining position or orientation of objects or cameras using feature-based methods
A lens cover includes a housing defining an optical aperture. A pair of opposed lens cover blades are each pivotally mounted to the housing at a common pivot point. A biasing member biases the blades apart from one another about the pivot point to uncover the optical aperture in an open position. A pair of magnetic members is included, each magnetic member being mounted to a respective one of the blades to bias the blades together to cover the optical aperture in a closed position.
G02B 26/02 - Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
G03B 11/04 - Hoods or caps for eliminating unwanted light from lenses, viewfinders, or focusing aids
A method of controlling FPA system stabilization includes calculating FPA adjustments as a function of FPA temperature and adjusting a TEC set point to assist the FPA adjustments in attaining a predetermined level of FPA performance. Adjusting the TEC set point can include adjusting the TEC set point as a function of at least one of ambient temperature, FPA temperature, or disparity between the predetermined level of FPA performance and a level of FPA performance obtainable by calculating the FPA adjustments as a function of FPA temperature alone without adjusting the TEC set point.
F25B 21/02 - Machines, plants or systems, using electric or magnetic effects using Peltier effectMachines, plants or systems, using electric or magnetic effects using Nernst-Ettinghausen effect
A method of image-based quantification for allergen skin reaction includes imaging an area of skin that has been subject to a skin-prick test to produce one or more images of the area. The method includes identifying regions of wheal and/or flare in the one or more images of the area and quantifying weal and/or flare indicators based on the regions identified. The method also includes outputting results of the quantified wheal and/or flare indicators indicative of quantified allergen skin reaction.
A method of image-based quantification for allergen skin reaction includes imaging an area of skin that has been subject to a skin-prick test to produce one or more images of the area. The method includes identifying regions of wheal and/or flare in the one or more images of the area and quantifying weal and/or flare indicators based on the regions identified. The method also includes outputting results of the quantified wheal and/or flare indicators indicative of quantified allergen skin reaction.
A method of determining the composition of a polymeric body includes applying electromagnetic radiation to the polymeric body, modulating the electromagnetic radiation using a tagant disposed within a polymer composition forming the polymeric body, and receiving the modulated electromagnetic radiation from the tagant at an infrared detector. The electromagnetic radiation received from the tagant has a signature corresponding to the polymer composition forming the polymeric body. A method of making a polymeric body and system for determining composition of a polymeric body are also described.
C08K 11/00 - Use of ingredients of unknown constitution, e.g. undefined reaction products
G01N 21/25 - ColourSpectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
C08J 3/20 - Compounding polymers with additives, e.g. colouring
G01N 21/31 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
G01N 21/63 - Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
C08J 3/22 - Compounding polymers with additives, e.g. colouring using masterbatch techniques
G01N 21/3563 - Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solidsPreparation of samples therefor
A wavefront sensing pixel is provided. The wavefront sensing pixel includes a low-pass filter filtering a charge signal from a photodetector and outputting a control signal when low-frequency signals are detected in the charge signal, and a control device to control flow of the charge signal past the control device based on whether a low-frequency signal is detected in the charge signal. The wavefront sensing pixel further includes a low-frequency signal path that receives a flow of signals that flow past the control device, and a high-frequency signal path independent of the low-pass filter and the control device, the high-frequency signal path receiving high-frequency signals included in the charge signal.
H04N 3/14 - Scanning details of television systemsCombination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
H04N 5/335 - Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
An imaging pixel including a control device to control flow of a charge signal from a photodetector. The control device has a variable impedance that varies in response to frequency of an input signal, the control device being biased to permit signals to flow through the control device dependent on the frequency of signals being output by the photodetector. The imaging pixel further includes a low-frequency signal path that receives a flow of signals that flow through the control device, and a high-frequency signal path independent of the low-frequency signal path and the control device, the high-frequency signal path receiving high-frequency signals included in the charge signal.
An imaging pixel is provided. The imaging pixel includes a photodetector that outputs charge signals in response to incident light and laser pulses and a high-frequency path. A detector biasing circuit is further provided that biases high-frequency signals of the charge signals that are associated with the laser pulses to follow the high frequency path. The detector biasing circuit effectively filters low-frequency signal components of the charge signals from following the high-frequency path.
A method of identifying at least one target includes receiving a series of images over time of pulsed energy reflected from the at least one target, each image including a plurality of pulses related to different first and second pulse codes, detecting the pulses in an image of the received images, and outputting pulse detection information including XY coordinates and arrival time information associated with the respective detected pulses. The method further includes associating the pulse detection information with the first and second pulse codes based on the arrival time information, and generating output position information for the at least one target in space that indicates output positions for the at least one target based on the XY coordinates and being associated with the corresponding first and second pulse codes.
An imaging assembly includes a base member defining an expansion chamber therein, the base member defining a gas inlet for receiving a compressed gas and a gas outlet for expelling expanded gas, and a focal plane array assembly mounted to the base member including a sensor and a lens.
An imaging and pulse detection (IPD) pixel array includes a plurality of imaging pixels arranged in a plurality of rows and columns. Each imaging pixel includes a respective photodetector that outputs signals in response to incident light and input laser pulses. The signals include imaging signals that correspond to the incident light and pulse signals that correspond to the input laser pulses. The IPD array further includes an isolation circuit associated with each of the respective imaging pixels, each isolation circuit outputting filtered output pulse signals in response to receiving the signals from the associated imaging pixel, the filtered output pulse signals corresponding to the pulse signals. The IPD array further includes a single pulse detection circuit that toggles between a charged and uncharged state corresponding to a pulse being received from at least one of the isolation circuits.
H04N 3/14 - Scanning details of television systemsCombination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
H04N 5/335 - Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
A leakage mitigation circuit is provided. The leakage mitigation circuit includes an inverter coupled to a storage node, wherein the storage node receives a signal output by an imaging pixel having a first voltage level to be stored. The inverter inverts the signal to a second voltage level. A single transistor coupled to the inverter and the storage node inverts the signal output by the inverter to the first level to hold the signal at the storage node to its original level. A self-biased device coupled to the inverter lowers current disturbance related to the storage node and increase threshold voltage at which fluctuation of the level of the signal at the storage node causes the signal to be inverted by the inverter.
H04N 3/14 - Scanning details of television systemsCombination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
H04N 5/359 - Noise processing, e.g. detecting, correcting, reducing or removing noise applied to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
H03K 17/14 - Modifications for compensating variations of physical values, e.g. of temperature
H03K 5/08 - Shaping pulses by limiting, by thresholding, by slicing, i.e. combined limiting and thresholding
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/335 - Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
A method of normalizing FPA system gain and correcting pixel non-uniformity for varying temperature includes determining an FPA temperature, calculating an FPA system gain as a function of the FPA temperature, and applying the FPA system gain at the FPA temperature to condition output of the FPA to produce temperature independent image data. The method also includes calculating a non-uniformity correction map on a pixel by pixel basis for the FPA, wherein non-uniformity correction for each pixel is a function of the FPA temperature, and applying the non-uniformity correction map to the imaging data from the FPA to produce temperature dependent non-uniformity corrected image data. An imaging system includes a focal plane array (FPA), a temperature sensor operatively connected to measure temperature of the FPA, and a module configured for system gain correction and non-uniformity correction as described above.
A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells. The collection well and the transfer well are of different depths, and are formed by a single diffusion.
H01L 21/00 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid-state devices, or of parts thereof
H01L 31/18 - Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/112 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect photo- transistor
An imaging system includes a housing having a lens that defines a first optical axis. A sensor is within the housing offset from the first optical axis. A digital display is within the housing offset from the first optical axis opposite from the sensor across the first optical axis. A second optical axis is defined between the sensor and the digital display. A polarized beam splitter is within the housing at an intersection of the first and second optical axes to allow a portion of incoming photons to pass and continue along the first optical axis for direct-eye viewing and to redirect another portion of incoming photons to the sensor along the second optical axis.
A method of normalizing FPA system gain for varying temperature includes determining an FPA temperature and calculating an FPA system gain as a function of the FPA temperature, system gain for the FPA at a reference temperature, and empirically derived coefficients. The method also includes applying the FPA system gain at the FPA temperature to condition output of the FPA to produce temperature independent image data. An imaging system includes a focal plane array (FPA). A temperature sensor is operatively connected to measure temperature of the FPA. A module is operatively connected to the FPA and temperature sensor to calculate FPA system gain for the FPA as described above, and to apply the FPA system gain to condition output of the FPA to produce temperature independent image data. There need be no temperature control device, such as a thermoelectric cooling device, connected for temperature control of the FPA.
H04N 5/374 - Addressed sensors, e.g. MOS or CMOS sensors
G01J 5/16 - Arrangements with respect to the cold junctionCompensating influence of ambient temperature or other variables
G01J 5/20 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
G01J 5/10 - Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
A method of correcting pixel non-uniformity for varying temperature includes determining an FPA temperature and calculating a non-uniformity correction map on a pixel by pixel basis for the FPA, wherein the non-uniformity correction for each pixel is a function of the FPA temperature and empirically derived coefficients. The method also includes applying the non-uniformity correction map at the FPA temperature to condition output of the FPA to produce temperature dependent non-uniformity corrected image data. An imaging system includes a focal plane array (FPA). A temperature sensor is operatively connected to measure FPA temperature. A module is operatively connected to the FPA and temperature sensor to calculate and apply a non-uniformity correction map as described above. There need be no temperature control device for the FPA. The FPA can include a buffered current mirror pixel architecture, and can include an InGaAs material for infrared imaging.
A photodiode includes a cap layer defining an inboard side and an outboard side. A plurality of pixels are formed in the cap layer extending from the inboard side to the outboard side. At least a portion of the cap layer is defined in between the pixels. A metal barrier is in between the pixels and is operatively connected to the inboard side of the cap layer in between the pixels to reflect light rays into the cap layer reducing the leakage of photons between the pixels.
A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.
H01L 31/0352 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/103 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
A sensor includes an InGaAs photodetector configured to convert received infrared radiation into electrical signals. A notch filter is operatively connected to the InGaAs photodetector to block detection of wavelengths within at least one predetermined band. An imaging camera system includes an InGaAs photodetector configured to convert received infrared radiation into electrical signals, the InGaAs photodetector including an array of photodetector pixels each configured to convert infrared radiation into electrical signals for imaging. At least one optical element is optically coupled to the InGaAs photodetector to focus an image on the array. A notch filter is operatively connected to the InGaAs photodetector to block detection of wavelengths within at least one predetermined band. A ROIC is operatively connected to the array to condition electrical signals from the array for imaging.
H01L 27/14 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy
H01L 31/109 - Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
A method of imaging includes monitoring a field of view with a first imaging sensor of a multiple channel imaging system and activating a second component of the imaging system from a stand by state to an active state upon detection of a change in the field of view of the first imaging sensor. The second component can include a second imaging sensor. The second imaging sensor can have a field of view overlapping with the field of view of the first imaging sensor. The first imaging sensor can be configured for imaging in a first spectral range, wherein the second imaging sensor is configured for imaging in a second spectral range that is different from the first spectral range. The first and second spectral ranges can be overlapping or non-overlapping.
A system for parallax correction includes a rotatable focus adjuster having a longitudinal axis. A lens retainer is engaged with the focus adjuster. A first lens is housed within the lens retainer aligned with the longitudinal axis. A second lens is positioned parallel to the first lens within the lens retainer. The second lens is configured to move laterally with respect to the first lens to correct for parallax between the first and second lenses.
G02B 7/02 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses
G02B 7/105 - Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification by relative axial movement of several lenses, e.g. of varifocal objective lens with movable lens means specially adapted for focusing at close distances
92.
Imaging systems with digital micromirror devices (DMD)
An imaging system includes an imager housing having a primary aperture defining an optical axis. A primary lens is disposed over the primary aperture. A first focal plane array (FPA) is within the imager housing. A second FPA is within the imager housing. A digital micro-mirror device (DMD) is angled with respect to the optical axis and optically coupled to the primary lens to selectively reflect light entering the primary aperture to at least one of the first FPA or the second FPA.
A focal plane array assembly includes a readout integrated circuit with a contact array surface, a photodiode array with a contact array surface facing the readout integrated circuit contact array surface, and an anisotropic conductive film disposed between contact array surfaces. The anisotropic conductive film includes conductive bodies that interconnect the photodiode array with the readout integrated circuit and an adhesive that couples the photodiode array to the readout integrated circuit.
An imaging and pulse detection pixel and an array of imaging and pulse detection pixels are provided. Each imaging and pulse detection pixel includes an optical detection device connected directly to a first and second transistor only, a pulse detection circuit that operates on the signal read out from the optical detection device and outputs a pulse detection output signal suitable for detection of pulses, and an imaging circuit that operates on a signal read out from the optical detection device and outputs an image output signal suitable for generation of an image. A terminal of the optical detection device is directly connected to only a gate terminal of the first transistor and a non-gate terminal of the second transistor.
An imager is provided that includes an integrated circuit. The integrated circuit includes at least one metal layer, a signal line extending in a first direction, and a pixel cell. The pixel cell includes imaging pixels and a metal interconnect. The imaging pixels include first, second, third, and fourth imaging pixels, arranged in two rows and two columns, each imaging pixel having a metal-insulator-metal (MiM) capacitor disposed on the at least one metal layer, the first and second imaging pixels being traversed by the signal line to receive signals from the signal line. The metal interconnect extends in a second direction different than the first direction and is coupled to the signal line and the third imaging pixel to transmit the signals to the third imaging pixel. The third imaging pixel is adjacent to the first imaging pixel and is disposed in a different column or row than the second imaging pixel.
A system for parallax correction includes a housing of a camera having a channel perpendicular to an optical axis of the camera. A lens enclosure is within the housing and includes a tab slideable along the channel. A first lens is positioned within the lens enclosure having a first focal plane array. A second lens is positioned within the lens enclosure having a second focal plane array. The second focal plane array is coupled to a pin disposed within the tab of the housing. The tab is configured to direct the pin to slide perpendicular to the optical axis along the channel to move the second focal plane array laterally with respect to the first focal plane array to correct for parallax between the first and second lenses.
A pixel master-slave photodiode bias control amplifier system is disclosed. The pixel master-slave photodiode bias control amplifier system may include a master pixel and one or more slave pixels. The slave pixel(s) may be connected to a portion of the master pixel. In this manner, components may be shared between/among the master pixel and the slave pixel(s); thus, for example, optimizing the component count of the pixel master-slave photodiode bias control amplifier system and the size occupied by the pixel master-slave photodiode bias control amplifier system.
H01J 40/14 - Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
H03F 3/08 - Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
A photosensitive pixel with gain stage is disclosed. The photosensitive pixel with gain stage may receive an input light stimulus and output a corresponding output voltage in response to the input light stimulus. The output voltage may correspond linearly to the magnitude of the input light stimulus over a linear operating region and logarithmically to the magnitude of the input light stimulus over a logarithmic operating region. In this manner, the photosensitive pixel with gain stage may be both sensitive to input light stimuli over the linear operating region and may exhibit dynamic range enabling non-saturated response to input light stimuli over the logarithmic operating region.
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
99.
Image lag mitigation for buffered direct injection readout with current mirror
A circuit having a buffered direct injection (BDI) module is provided for image lag mitigation. The BDI module includes an optical detector coupled to a buffer. The buffer has a pixel amplifier which includes no more than two transistors. The BDI module includes a first current mirror coupled to the BDI module. The first current mirror generates a modulating current based on the output of the optical detector. The BDI module further includes a second current mirror coupled to the first current mirror. The second current mirror is configured to generate either an amplified or attenuated photocurrent operable to optimize an imaging time and scene brightness of the optical detector. The BDI module further includes a reset circuit, coupled to the second current mirror, and being configured to reset an integration capacitor which integrates an image signal based on the output of the optical detector.
H01L 31/00 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof
H04N 5/3745 - Addressed sensors, e.g. MOS or CMOS sensors having additional components embedded within a pixel or connected to a group of pixels within a sensor matrix, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
H04N 5/378 - Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
A laser designator pulse detector includes an InGaAs photodetector configured to convert laser signals into electrical signals. A Read Out Integrated Circuit (ROIC) is operatively connected to the InGaAs photodetector to condition electrical signals from the InGaAs photodetector. The ROIC can be operatively connected to a peripheral device including one or more modules configured to process signals from the ROIC and provide pulse detection, decoding, and tracking. In another aspect, a laser designator pulse detector includes a two-dimensional array of photodetectors configured to convert laser signals into electrical signals. A ROTC as described above is operatively connected to the two-dimensional array of photodetectors.
patents
