Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B12Hw)xSiyOz with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.
H01S 5/343 - Structure or shape of the active regionMaterials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser
G02B 27/09 - Beam shaping, e.g. changing the cross-sectioned area, not otherwise provided for
Various articles and devices can be manufactured to take advantage of a what is believed to be a novel thermodynamic cycle in which spontaneity is due to an intrinsic entropy equilibration. The novel thermodynamic cycle exploits the quantum phase transition between quantum thermalization and quantum localization. Preferred devices include a phonovoltaic cell, a rectifier and a conductor for use in an integrated circuit.
C30B 7/10 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
Various articles and devices can be manufactured to take advantage of what is believed to be a novel thermodynamic cycle in which spontaneity is due to an intrinsic entropy equilibration. The novel thermodynamic cycle exploits the quantum phase transition between quantum thermalization and quantum localization. Preferred devices include a phonovoltaic cell, a rectifier and a conductor for use in an integrated circuit.
H01L 31/036 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
H01L 31/0368 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
H01L 31/04 - SEMICONDUCTOR DEVICES NOT COVERED BY CLASS - Details thereof adapted as photovoltaic [PV] conversion devices
4.
Composition and method for making picocrystalline artificial borane atoms
z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.
C30B 7/10 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
5.
COMPOSITION AND METHOD FOR MAKING PICOCRYSTALLINE ARTIFICIAL BORANE ATOMS
Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of boron icosahedra with a nearly- symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B12Hw)x Siy Oz with 3 ≤ w ≤ 5, 2 ≤ x ≤ 4, 2 ≤ y ≤ 5 and 0 ≤ z ≤ 3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.
z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.
C23C 16/54 - Apparatus specially adapted for continuous coating
C23C 16/46 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
C30B 7/10 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
C07F 7/21 - Cyclic compounds having at least one ring containing silicon but no carbon in the ring
C23C 16/30 - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
7.
COMPOSITION AND METHOD FOR MAKING PICOCRYSTALLINE ARTIFICIAL BORANE ATOMS
Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of boron icosahedra with a nearly- symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B12Hw)x Siy Oz with 3 = w = 5, 2 = x = 4, 2 = y = 5 and 0 = z = 3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.
Various articles and devices can be manufactured to take advantage of what is believed to be a novel thermodynamic cycle in which spontaneity is due to an intrinsic entropy equilibration. The novel thermodynamic cycle exploits the quantum phase transition between quantum thermalization and quantum localization. Preferred devices include a phonovoltaic cell, a rectifier and a conductor for use in an integrated circuit.
H01L 21/033 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or comprising inorganic layers
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
H10F 77/16 - Material structures, e.g. crystalline structures, film structures or crystal plane orientations
H10N 19/00 - Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups
H10N 70/00 - Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
patents
