Splitting an address translation cache (ATC) into two portions can reduce costs and maintain efficient retrieval of data. One portion can be disposed in a first location while a second portion can be disposed in a second location distinct from the first location. The first location can be in the controller. The second location can be in a host memory buffer (HMB) or in a memory device separate from the controller. To obtain translated addresses, untranslated addresses can be searched in the first portion and the corresponding translated addresses can be retrieved from the second portion. When invalidating untranslated addresses, the untranslated addresses of the first portion can be deleted without a need to delete corresponding translated addresses in the second portion. To improve ATC storage capacity, grouping of untranslated addresses is possible using most significant bytes (MSBs).
A non-volatile memory includes a plurality of word lines connected to non-volatile memory cells, a plurality of driver lines configured to carry one or more word line voltages, and a plurality of word line switches that selectively connect the driver lines to the word lines. To more efficiently utilize space on the die, the word line switches are arranged in a plurality of three dimensional stacks such that each stack of the plurality of stacks comprises multiple word line switches vertically stacked.
H10B 43/20 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
H10B 41/20 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
Instead of an arbitration over the link not considering bursts, a smart scheduler in a solid state drive (SSD) host interface is burst aware. The scheduler considers the type of transactions that are going to be sent over the interface. The scheduler sends the transactions in the most efficient way while maximizing the efficiency over the host DRAM. The schedulers may be calibrated from time to time on-the-fly to find the optimal configurations adapted to the current workload. The scheduler will organize the packets selected by the arbitration module so that the data transfers are sent in a burst of a predetermined sized to the host for optimum performance. For further optimization other packet types are sent in bursts as well.
Instead of a system that does not address host buffer fragmentation or saturation, utilize a different metric for command prioritization. Commands are re-ordered and prioritized based on the number of outstanding host buffers that will be released on command completion, thereby limiting and/or reducing the physical address fragmentation and host memory overhead. Command processing priority will take the number of host memory page segments represented by the command into consideration.
Instead a having a system that lacks command draining, add a drain buffer to the solid state drive (SSD) to optimize command usage. By adding a drain buffer per physical function (PF) or virtual function (VF) and utilizing logic that can generate traffic, the controller is able to funnel packets to a host if the packet is not needed. The controller will change the original address of the packet to a different address. The controller will then send that packet with the different address through the host and back to the memory device. The packet will be in a different function, but the controller will know not to access the packet or ignore the packet. Ignoring the packet will act as a drain for the SSD. The controller PCIe packets draining occur in special flows, dummy traffic generation for PCIe attribute measurements, and internal events posting over the host/device interface.
G06F 13/16 - Handling requests for interconnection or transfer for access to memory bus
G06F 13/28 - Handling requests for interconnection or transfer for access to input/output bus using burst mode transfer, e.g. direct memory access, cycle steal
G06F 13/42 - Bus transfer protocol, e.g. handshakeSynchronisation
An alignment tool for a solder machine includes a base portion, a bracket and a solder wire alignment portion. Each portion is moveable with respect to the other portions. The base portion includes a laser alignment hole provided on a slope that extends from the base portion. The laser alignment hole is used to align the alignment tool to a laser of the solder machine. A solder wire feeder alignment slot of the solder wire alignment portion is used to align the bracket and the solder wire alignment portion with a solder wire feeder of the solder machine. When each portion of the alignment tool is in a desired position, fasteners of the alignment tool are tightened to secure each portion in the desired position. The alignment tool mirrors a correct alignment between the laser and the solder wire feeder and is usable for subsequent solder machine alignment processes.
A multi-layer printed circuit board (PCB) is fabricated using basalt fibers instead of glass fibers. Using basalt fibers in lieu of glass fibers makes the PCB more environmentally friendly without sacrificing mechanical and electrical properties. The multi-layer PCB includes a basalt fiber core comprised of a basalt fiber prepreg provided between two copper layers. A first copper layer and a second copper are coupled to different sides of the basalt fiber core. A first basalt fiber prepreg is coupled to the first copper layer and a second basalt fiber prepreg is coupled to the second copper layer.
A semiconductor structure includes a first-tier alternating stack of first-tier insulating layers and first-tier electrically conductive layers, a second-tier alternating stack of second-tier insulating layers and second-tier electrically conductive layers that overlies the first-tier alternating stack, a memory opening vertically extending through the first-tier alternating stack and the second-tier alternating stack, a memory opening fill structure located in the memory opening and including a memory film and a vertical semiconductor channel, a first contact via structure contacting one of the first-tier electrically conductive layers, a first-tier tubular dielectric spacer including a first inner sidewall contacting the first contact via structure and contacting each first-tier electrically conductive layer that overlies said one of the first-tier electrically conductive layers, and a first-tier pillar structure vertically extending through each first-tier electrically conductive layer and having a top surface that is coplanar with a topmost surface of the first-tier alternating stack.
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/30 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
9.
REMOVABLE MEMORY CARD WITH EFFICIENT CARD LOCK MECHANISM, XY RATIOS, ANTI-REVERSE INSERTION FEATURE, PULLOUT FEATURE, AND PADS LAYOUT
A memory card is provided with various pad layouts to prevent a data signal pad from contacting a power contact in a host during insertion and removal of the memory card. The memory card can have a form factor and features that accommodate a relatively-large memory with relatively-high performance and accompanying thermal conditions. An efficient card lock mechanism is also provided.
G06K 19/02 - Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the selection of materials, e.g. to avoid wear during transport through the machine
H05K 5/02 - Casings, cabinets or drawers for electric apparatus Details
10.
THREE-DIMENSIONAL MEMORY DEVICE WITH DIFFERENT WIDTH SUPPORT PILLAR STRUCTURES AND METHODS OF MAKING THE SAME
A method of forming a three-dimensional memory device includes forming an alternating stack of insulating layers and sacrificial material layers, forming memory openings through the alternating stack, forming memory opening fill structures in the memory openings, forming a first support opening and a second support opening through the alternating stack, laterally expanding the first support opening without expanding the second support opening, forming a first dielectric support pillar structure and a second dielectric support pillar structure in the laterally-expanded first support opening and in the second support opening, respectively, and replacing the sacrificial material layers with electrically conductive layers. Each of the memory opening fill structures includes vertical semiconductor channel and a respective vertical stack of memory elements.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
H10B 51/10 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
H10B 51/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
11.
Translation And Data Management In Storage Devices
With ever-increasing capacities and performance demanded in new storage devices, the number of control table data entries are increased to store more updates stemming from the increased number of read and/or write operations. To avoid becoming a bottleneck, devices, such as storage devices, and other similar methods and systems as described herein efficiently manage control table sets to reduce latency. This can be accomplished by designating a specific position for each control table set and storing updates to such control table sets in a designated position. Furthermore, data can be efficiently kept in the volatile memory, such as SRAM, or evicted from the volatile memory to the non-volatile memory, such as NAND. Determinations can occur for when the read/write operations should be performed using volatile memory or non-volatile memory. These determinations can be decided dynamically and based on the storage device state and incoming workload, resulting in lower overall latencies.
As block sizes in NAND memory continue to increase in size and density, in can be useful to access less than all of the block, such as sub-block or subset of the blocks NAND strings, in order to reduce read disturbs, reduce power consumption, and increase operating speeds. Although this sort of separation of sub-block can be achieved by independently biasable select gates, the sort of select gate structure can face processing difficulties, particularly at the source side of three dimensional NAND structures. To avoid these difficulties while still providing individually selectable sub-blocks, the following introduces word line based selectors, where multiple word lines of a blocks are programmed with different sets of threshold voltages, allowing them to be biased for individual access of sub-blocks.
G11C 16/26 - Sensing or reading circuitsData output circuits
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
13.
SUPPRESSION OF PEAK ICC DURING BLOCK SELECTION IN NON-VOLATILE MEMORIES
To reduce Icc spikes during the operation of a non-volatile memory device, different block decoding parameters can be used based on whether a block is open or closed. For blocks that are open or in other high Icc conditions, such as first read, the timing for the block decode control signals, the block decode voltage levels, or a combination of these can be used to lower Icc spikes.
A device structure includes a first field effect transistor, a second field effect transistor, and a local interconnect structure. The local interconnect structure includes a first semiconductor pillar structure contacting a top surface of an active region of the first field effect transistor, a metallic structure contacting a top surface of the first semiconductor pillar structure, and a second semiconductor pillar structure contacting an electrical node of the second field effect transistor.
H10B 43/40 - EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/528 - Layout of the interconnection structure
15.
METAL LINES LOCATED BETWEEN ETCH STOP LAYERS AND SEPARATED BY AIR GAPS AND METHODS OF FORMING THE SAME
A semiconductor structure includes contact-level metal structures embedded in a contact-level dielectric layer, a via-level dielectric layer overlying the contact-level dielectric layer, an etch-stop dielectric layer overlying the via-level dielectric layer, integrated line-and-via structures each including a metal line portion and at least one via portion, discrete etch-stop dielectric cap rails that overlie top surfaces of the respective metal line portions, dielectric rails located between neighboring pairs of the metal line portions, and air gaps located between neighboring pairs of the metal line portions and at least partially enclosed by the respective dielectric rails.
Different operations have different clock rate bottleneck points. For example, during a read operation, the processors may be the bottleneck whereas other operations will not be bottlenecks. Those other operations can have their clock rates reduced to save power since there is no benefit to a higher clock rate as the bottleneck is elsewhere. Predicting the bottleneck would be beneficial. Statistics correlating the bottleneck points with the workload and clock rates are tracked. When the workload changes, the statistics can be consulted to determine where the bottleneck is located and then slow down the clock rates for the non-bottleneck operations. A clock rate table is maintained in the device controller. The table holds the clock rate of each component. Predicting the workload and hence, the clock rates, reduces power consumption, improves performance, and better quality of service (QoS) compatibility characteristics.
Aspects of a storage device are provided for handling detection and operations associated with an erase block type of the block. The storage device includes one or more non-volatile memories each including a block, and one or more controllers operable to cause the storage device to perform erase type detection and associated operations for single blocks or metablocks. For instance, the controller(s) may erase the block prior to a power loss event, perform at least one read of the block following the power loss event, identify the erase block type of the block in response to the at least one read, and program the block based on the identified erase block type without performing a subsequent erase prior to the program. The controller(s) may also perform metablock operations associated with the identified erase block type. Thus, unnecessary erase operations during recovery from an ungraceful shutdown (UGSD) may be mitigated.
In addition to transmitting over the ASIC-NAND bus the legacy long command format, a data storage device will be able to use also a compressed/improved command format. The alternate command's format is hidden from most parts of the NAND. The NAND can have a layer that will translate compressed / non standard commands to the legacy (standard) format for use by the rest of the NAND device's logic, as currently implemented. According to selected command format, the Low Level Flow Sequencer (LLFS) sequence generator and the flash interface module (FIM) will know which format to use in order to encode the command's content for transmission to the NAND by the FIM / ASIC / controller. The command is then executed on the NAND side according to the selected command scheme. Changes will be applied in the device controller on the ASIC side – to encode the command, and on the NAND side - to decode the command according to the selected format. The controller on the ASIC side decides on the desired format and is responsible to sync any format change with the NAND before sending a command in a different format than currently agreed between the controller and the NAND.
Instead of using trees to group key values (KV) based on KV information, use host provided information for grouping KVs. In the cases where the host provides KV information, the host determines how to group the information. The controller will then use the KV information to store the KV information in a group. The KVs can be sorted in the group by either size, length, type, etc. of the KV received from the host. Independent backend logic, such as data routing management, parity management, block management, and proactive data retrieval, is used to group KV information. Grouping the KV information using the independent backend logic will make garbage collection (GC) less difficult and increase retrieval performance due to the grouping of the KVs.
A three-dimensional memory device includes a pair of alternating stacks of insulating layers and electrically conductive layers, where the pair of alternating stacks are laterally spaced from each other by a lateral isolation trench, memory openings vertically extending through a respective alternating stack of the pair of alternating stacks, memory opening fill structures located in a respective one of the memory openings and including a respective vertical semiconductor channel and a respective vertical stack of memory elements, and a lateral isolation trench fill structure located in the lateral isolation trench. Phosphorus-doped silicon oxide portions are located within or on sidewalls of the lateral isolation trench at levels of the insulating layers.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
21.
ENABLING POWER OPTIMIZATION THROUGH DRAM BANK MANAGEMENT IN SOLID STATE DRIVES
A storage device optimizes performance and operates under a predefined power ceiling. The storage device determines its power usage and when the power usage is below a power ceiling threshold, the storage device operates according to a first random-access memory (RAM) usage policy and uses an internal RAM in processing host data. When the power usage is above the power ceiling threshold, the storage device operates according to a second RAM usage policy and uses an external RAM or the external RAM and portions of the internal RAM in processing the host data. The storage device switches to the first RAM usage policy when it determines that the host device is operating in a high-performance mode, there is a drop in cache hits on the external RAM, or a congestion level on a link between the host device and the storage device is above a congestion threshold.
A memory device includes a pair of alternating stacks of insulating layers and electrically conductive layers, memory openings vertically extending through a respective one of the pair of alternating stacks, memory opening fill structures located in the memory openings, a lateral isolation trench fill structure located in a lateral isolation trench between the pair of alternating stacks, and support pillar structures vertically extending through a respective one of the pair of alternating stacks. The support pillar structures include first-type support pillar structures each having a respective circular or elliptical horizontal cross-sectional shape, and auxiliary support pillar structures each having a horizontal cross-sectional shape of a sector of a circle or an ellipse and having a planar vertically-extending surface.
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
A method includes forming a first-tier structure over a substrate, forming first-tier trenches laterally extending along a first horizontal direction and laterally spaced apart from each other along a second horizontal direction through the first-tier structure, non-conformally depositing a plurality of material layers over the first-tier structure such that first-tier cavities are formed in volumes of the first-tier trenches that are not filled with the plurality of material layers, and inducing laterally-extending cracks in portions of the plurality of material layers that overlie the first-tier cavities, such that the laterally-extending cracks are connected to a respective underlying one of the first-tier cavities and vertically extend to a topmost material layer of the plurality of material layers.
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
A storage device minimizes HPB entry inactivation resulting from data associated with hot reads being retrieved from multiple HPB sub-regions covering a logical-to-physical table. The storage device may support the HPB feature and a multiple HPB sub-region mode. The storage device includes a controller that tracks a hit count associated with a logical block address in a read command. The controller determines that the hit count has reached a hit threshold and updates a hit table to identify logical block address pages associated with hit counts that have reached the hit threshold across HPB sub-regions covering a logical-to-physical table. The controller transmits the hit table to a host device to be stored in an HPB cache on the host device and to be used by the host device for read commands sent from the host device to the storage device.
A non-volatile memory comprises a plurality of non-volatile memory cells positioned in different regions of a block of non-volatile memory cells. Each region is connected to a different separate and independently controlled selection line so that each of the regions can be selected (e.g., one at a time) for a memory operation. To perform a read operation, the memory system is configured to apply a voltage to a selected word line and sequentially sense data from non-volatile memory cells positioned in the different regions without recharging the voltage applied to the selected word line.
A three-dimensional memory device includes: a pair of alternating stacks of insulating layers and electrically conductive layers, the pair of alternating stacks being laterally spaced from each other by a lateral isolation trench that generally extends along a first horizontal direction; memory openings vertically extending through a respective one of the pair of alternating stacks; memory opening fill structures located in a respective one of the memory openings; and a lateral isolation trench fill structure including a peripheral spacer and a conductive fill structure, wherein a first vertical cross-sectional view of the lateral isolation trench fill structure in a first vertical plane includes: an outer periphery of the peripheral spacer which includes a horizontal top surface segment located in a first horizontal plane; and an inner periphery of the peripheral spacer that is vertically spaced from, and located entirely below, the first horizontal plane.
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 51/50 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the boundary region between the core and peripheral circuit regions
H10B 51/10 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
The present disclosure generally relates to split, non-operational power states for a data storage device. The data storage device can transition between the split, non-operational power states without advertising the transition to the host device. The power state parameters that are advertised to the host device are adjusted such that the host device is guided to the correct power decision based on the advertised power and duration. By splitting the non-operational power states, the data storage device does not incur additional transitional energy costs for short idle durations.
A controller maintains logical block address (LBA) to physical block address (PBA) mappings as mSets in a storage address table (SAT). Because the SAT may include many mappings, and, consequently, have a large size, the SAT may be stored in a distanced memory from the controller, such as a non-volatile memory device of the data storage device or a host memory buffer of a host device that is coupled to the data storage device. In order to optimize performance, a portion of the SAT may be stored as a compressed address table (CAT) in an internal memory of the controller or another volatile memory of the data storage device. During operation, the controller maintains an active range of mSets in the CAT by adding mSets to the CAT based on whether the LBA is sequential to the active range and a hit count of the active range.
Interposers for coupling a ball grid array (BGA) device to a printed circuit board (PCB) and related methods are provided. One such method involves aligning a first array of conductive rings on a flexible substrate of the interposer with ball pads of a BGA device, coupling the first conductive rings to the ball pads, aligning a second array of conductive rings on the flexible substrate with connectors of a first PCB including an array of connectors, and coupling the second conductive rings to the array of connectors of the first PCB. One such interposer assembly includes a flexible substrate, a first array of conductive rings on the flexible substrate, wherein the first conductive rings is attached to an array of ball pads of a BGA device, a second array of conductive rings on the flexible substrate, and conductive traces connecting the first and second conductive rings.
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 23/538 - Arrangements for conducting electric current within the device in operation from one component to another the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H05K 1/11 - Printed elements for providing electric connections to or between printed circuits
30.
STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE WITH LAYER CONTACT VIA STRUCTURES LOCATED ABOVE SUPPORT PILLAR STRUCTURES AND METHODS OF FORMING THE SAME
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in memory opening and including a vertical stack of memory elements located at levels of the electrically conductive layers and a vertical semiconductor channel, a layer contact via structure contacting a first electrically conductive layer within a first subset of the electrically conductive layers and vertically extending through a second subset of the electrically conductive layers that overlies the first subset, and a support pillar structure located under a bottom surface of the layer contact via structure.
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H10B 41/50 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
Adding a bypass module and a pattern detector module to a data path of a controller will increase the efficiency of both sanitize block erase audit and sanitize crypto erase audit operations. The sanitize crypto erase audit skips an end to end (E2E) protection module to provide decrypted data to a static random access memory (SRAM) buffer and ultimately a host device through a direct memory access (DMA) module. The sanitize block erase audit utilizes the pattern detector module to provide a known pattern to the SRAM buffer and host through the DMA module. The bypass module and pattern detector module feed into a multiplexer (Mux) prior to the SRAM buffer.
A three-dimensional memory device includes alternating stacks of insulating layers and electrically conductive layers, where each of the alternating stacks laterally extends along a first horizontal direction, and the alternating stacks are laterally spaced apart from each other along a second horizontal direction by lateral isolation trenches, arrays of memory openings, where each array of memory openings vertically extends through a respective one of the alternating stacks, arrays of memory opening fill structures located within the arrays of memory openings, where each of the memory opening fill structures includes a respective vertical stack of memory elements and a vertical semiconductor channel, and composite lateral isolation trench fill structures located between a respective neighboring pair of the alternating stacks. Each of the composite lateral isolation trench fill structures includes a laterally alternating sequence of dielectric pillar structures and isolation opening fill structures arranged along the first horizontal direction.
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
33.
THREE-DIMENSIONAL MEMORY DEVICE WITH PILLAR SHAPED TRENCH BRIDGE STRUCTURES AND METHODS OF FORMING THE SAME
A three-dimensional memory device includes alternating stacks of insulating layers and electrically conductive layers laterally extending along a first horizontal direction and laterally spaced apart along a second horizontal direction by lateral isolation trenches, arrays of memory openings vertically extending through the alternating stacks, arrays of memory opening fill structures located within the arrays of memory openings and including a respective vertical stack of memory elements and a vertical semiconductor channel, and composite lateral isolation trench fill structures located between a respective neighboring pair of the alternating stacks. Each of the composite lateral isolation trench fill structures includes a dielectric pillar structure which vertically extends at least from first horizontal plane including a bottom of the alternating stacks to a second horizontal plane including a top of the alternating stacks.
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 41/50 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
34.
MEMORY DEVICE WITH THROUGH-STACK CONTACT VIA STRUCTURES WHICH CONTACT PLURAL STACKS AND METHOD OF MAKING THE SAME
A memory device includes a first-tier structure including a first first-tier alternating stack and a second first-tier alternating stack, a second-tier structure overlying or underlying the first-tier structure and including a first second-tier alternating stack and a second second-tier alternating stack that are laterally spaced apart from each other by a jumper alternating stack, and memory stack structures vertically extending through a respective set of at least two alternating stacks. Each of alternating stack includes a respective vertically alternating sequence of insulating layers and electrically conductive layers. An electrically conductive path electrically connects a first first-tier electrically conductive layer within the first first-tier alternating stack, a second first-tier electrically conductive layer within the second first-tier alternating stack, a first second-tier electrically conductive layer within the jumper alternating stack, a first layer contact via structure, and a second layer contact via structure.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/41 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
H10B 43/40 - EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
35.
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE CONTACT LAYER HAVING HORIZONTALLY AND VERTICALLY EXTENDING PORTIONS AND METHODS OF FORMING THE SAME
A memory device includes source-level material layers containing a lower source-level semiconductor layer, a source contact layer, and an upper source-level semiconductor layer, an alternating stack of insulating layers and electrically conductive layers located over the source-level material layers, a memory opening vertically extending through the alternating stack and into an upper portion of the source-level material layers, and a memory opening fill structure located in the memory opening and including a memory film and a vertical semiconductor channel. The source contact layer includes a horizontally-extending portion and a vertically-extending portion having a greater vertical extent than the horizontally-extending portion, having an inner cylindrical sidewall contacting a bottom portion of the vertical semiconductor channel, and contacting a bottommost insulating layer within the alternating stack.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H10B 41/50 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
36.
PHOTOLITHOGRAPHY METHOD USING CASTELLATION SHAPED ASSIST FEATURES TO FORM A LINE-AND-SPACE PATTERN AND PHOTOMASK CONTAINING THE ASSIST FEATURES
A method of patterning a structure includes applying a photoresist layer over a material layer located over substrate, lithographically exposing the photoresist layer by passing an exposure radiation beam through a photomask, developing the exposed photoresist layer, and etching the material layer using the developed photoresist layer as a mask. The photomask contains a photomask pattern including a combination of a line-and-space pattern and a peripheral castellation pattern. The peripheral castellation pattern includes a combination of an end straight line dummy pattern and a plurality of hammerhead patterns attached to a lengthwise sidewall of the end straight line dummy pattern.
A data storage device includes a memory device and a controller coupled to the memory device. The controller is configured to receive a read command to read data from the memory device or a write command to write data to the memory device from a host device, determine whether a bottleneck exists in a data/control path between the host device and the memory device, wherein the bottleneck exists in a hardware module of the plurality of hardware modules, and execute a bottleneck release operation when the bottleneck exists in the data/control path between the host device and the memory device, wherein the bottleneck release operation is dependent on whether the bottleneck exists in the input queue. The bottleneck release operation includes changing a clock of the hardware module, moving the command to a different hardware module configured to process the command, and combinations thereof.
The present disclosure relates to a non-volatile memory that can operate in both full block node and sub-block mode such that the non-volatile memory is configured to transition blocks of non-volatile memory cells between full block mode and sub-block mode. When a block of the non-volatile memory is in sub-block mode, the block is divided into a first sub-block, a second sub-block, and dummy word lines between the first sub-block and the second sub-block.
A streaming data interface or a 'telemetry tap' in conjunction with a host defined telemetry program is used to regulate the type and amount of telemetry data sent to the host device. The amount of telemetry data provided to the host is based on a request. The controller will receive and execute valid host generated programs which define which telemetry operations should occur and be forwarded to the host via the streaming telemetry mechanism. The controller will use the user/host programmable mechanisms that will collaborate with internal drive logging mechanisms. The controller will watch for the host-defined programmable mechanisms and send the requested amount of telemetry data to the host once the programmable mechanisms have executed.
An apparatus includes a semiconductor wafer including a first die and a second die, each including, a selector circuit including a first input terminal coupled to a first die bond pad, a second input terminal, and an output terminal, the selector circuit configured to selectively couple the first input terminal and the second input terminal to the output terminal, a conductor selectively configured to couple the second input terminal to either a first power supply or a second power supply, and an address determined based on a signal value at the output terminal of the selector circuit.
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
Instead of using programmable block size aggregation, a lower multiple of page, and down to a page size aggregation is used. A bad block prediction unit in a controller is able to predict when a programmable block has a bad page. The bad block prediction unit can lower the aggregation size of a programmable block by monitoring the life cycle of the programmable block through bad block statistic collection. When the accumulation size passes a threshold, the bad block prediction unit lowers the aggregation size. The bad block prediction unit can also predict when to lower aggregation size based on the number of reconstructions. An aggregate size level is set at a page boundary, and once the number of reconstructions reaches that page boundary, the bad block prediction unit lowers the aggregation size to page aggregation. The bad block prediction unit is able to predict both life cycle threshold changes and reconstructions changes.
A non-volatile storage apparatus comprises a non-volatile memory divided into blocks, with each block divided into regions. Each region of a same block includes a plurality of non-volatile memory cells controlled by a separate drain side (or different type of) select line for the region such that different regions of a same block are controlled by different drain side (or different type of) select lines. The non-volatile storage apparatus is configured to concurrently program memory cells in multiple regions.
Multiple non-volatile memory dies are tested to identify word lines that have a first reliability and word lines that have a second reliability. Word lines that have the first reliability are designated to store data at a first number of bits per memory cell. Word lines that have the second reliability are designated to store data at a second number of bits per memory cell. The second number of bits per memory cell include more bits per memory cell than the first number of bits per memory cell.
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, and a hafnium or zirconium oxide containing backside blocking dielectric layer. Each of the memory opening fill structures includes a respective vertical stack of memory elements and a vertical semiconductor channel. Each of the electrically conductive layers includes a metal layer and a tungsten nitride containing diffusion barrier layer. The hafnium or zirconium oxide containing backside blocking dielectric layer is located between the tungsten nitride containing diffusion barrier layer and the memory opening fill structures.
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
H01L 29/423 - Electrodes characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
45.
MULTI-HOST BANDWIDTH MANAGEMENT CONSIDERING EXTERNAL AND INTERNAL TRAFFIC
Instead of using a bandwidth limiter for bandwidth allocation in an SSD, a dummy virtual function (VF) is used to transfer internal operations. A centralized logic such as the bandwidth limiter is incorporated in the device controller. This logic is responsible for controlling the bandwidth between the hosts. The logic is not just responsible for data transfers triggered by the hosts, but also for data transfers triggered by the device in internal operations such as garbage collection. In order to control the traffic trigged by internal operations, a dummy VF is created along with dummy submission queues. The internal operations are queued in the dummy submission queues, while the bandwidth limiter is responsible for the performance rate. Using this approach, bandwidth allocation is balanced between the hosts and SSD.
To improve memory cell endurance and erase times for non-volatile memories, such as NAND memory, a sub-block based adaptive erase pulse is used. In a memory structure where the array is composed of blocks that have multiple sub-blocks, after applying an erase pulse to an erase selected block, one of the sub-blocks is erased verified and, if it fails to verify, the next erase pulse's duration is tuned based on the number of memory cells of that sub-block that fail to verify. If the first verified one of the sub-blocks verifies, the other sub-blocks of the erase selected block are erased verified, with the next erase pulse's duration tuned based on the number of the other sub-blocks that fail to verify.
G11C 16/16 - Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
47.
MEMORY DEVICE INCLUDING A GERMANIUM-CONTAINING SOURCE STRUCTURE AND METHODS FOR FORMING THE SAME
A memory device includes a semiconductor source line layer containing silicon and electrical dopants, an alternating stack of insulating layers and electrically conductive layers located over the semiconductor source line layer, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening. The memory opening fill structure includes a memory film, a vertical semiconductor channel including silicon that is laterally surrounded by the memory film, and a silicon-germanium structure contacting an end portion of the vertical semiconductor channel and contacting the semiconductor source line.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
48.
ENHANCED END TO END PROTECTION IN KEY VALUE STORAGE DEVICES
Key value (KV) pair data includes a key and a value, where the key addresses the value. The value may include one or more flash management units (FMUs). Because the value is read in order, sequentially from one FMU to a next FMU, end-to-end (E2E) protection of the value may be optimized and improved. E2E protection may including using checksum signatures, of which cyclic redundancy code (CRC) signatures are but one example, to ensure that corrupted data is not returned to a host device. Optimizing checksum signatures used to protect the value may include generating an aggregated checksum signature for each FMU based on a current FMU and each previous FMU of the value or only generating a single checksum signature for an entirety of the value. Thus, characteristics of the value may be taken advantage of in order to improve and optimize E2E protection.
A semiconductor structure includes a first field effect transistor including a first gate spacer having first laterally-straight bottom edges that coincide with top edges of first laterally-straight sidewalls of the first gate dielectric. The semiconductor structure further includes a second field effect transistor including a second gate dielectric that includes at least one discrete gate-dielectric opening that overlies a respective second active region, and a second gate spacer including a contoured portion that overlies and laterally surrounds a second gate electrode, and at least one horizontally-extending portion that overlies the second active region and including at least one discrete gate-spacer openings. The second field effect transistor may have a symmetric or non-symmetric configuration.
Instead of allowing an electrostatic discharge (ESD) event to cause a lost clock signal sync due effects of the ESD event causing an SSD to enter low power mode, utilizing ESD detection can be used to stop the reference clock signal to avoid involuntary low power mode. When an ESD event occurs, an ESD antenna sensor will selectivity disable sensitive signals and the reference clock signal. Once the ESD detector recognizes an ESD event has occurred, the device is able to enter freeze mode. While the reference clock signal is in freeze mode, the input signals are bypassed to avoid lost clock signal sync. Once the ESD event is done, the controller notifies the host to restart the reference clock signal and resume clock signal sync.
A storage device may ensure consistent performance when executing a read command provided by a host device. The storage device executes a read instruction received from the host device and executes a background operation to manage resources on a memory device and/or perform thermal throttling on the storage device. The storage device executes a formula including an interleave ratio to interleave host read operations with the background operation based on an operation time. The storage device also uses a read temperature threshold, a preset slowdown percentage, and/or a read speed to optimize host read operations during thermal throttling and thereby limit performance degradation during read operations.
More efficient memory device usage is possible by altering the memory device management. For example, when the full storage capacity of the memory device will not be used, certain portions of the memory device can be shut off and then turned on when the storage capacity is needed. When less capacity is needed, data can be consolidated and certain portions of the memory device can be shut off. Additionally, rather than operating in multilevel cell (MLC) memory, the memory device can start in single level cell (SLC) memory and transition to MLC memory over time. If there is a determination that less memory is needed, the memory device can transition from MLC memory to SLC memory. In so doing, the storage capacity of the memory device is more appropriately utilized.
Adding a bypass module and a pattern detector module to a data path of a controller will increase the efficiency of both sanitize block erase audit and sanitize crypto erase audit operations. The sanitize crypto erase audit skips an end to end (E2E) protection module to provide decrypted data to a static random access memory (SRAM) buffer and ultimately a host device through a direct memory access (DMA) module. The sanitize block erase audit utilizes the pattern detector module to provide a known pattern to the SRAM buffer and host through the DMA module. The bypass module and pattern detector module feed into a multiplexer (Mux) prior to the SRAM buffer.
G06F 21/79 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data in semiconductor storage media, e.g. directly-addressable memories
Instead of using external tools for admin control operations for a device, files are used to control the device. As admin controls need to be changed, a special file is generated in the device using a file pattern generator. When the special file is written to the storage device, a file pattern engine recognizes the special file created to extract the vendor specific command. When the special file is written to the storage device, the device will recognize the special file and will perform the operation indicated in the special file. The user is able to use the special file for a single use or future use when needed. In future use cases, the special file is able to be recognized by other devices in need of the special file to execute the vendor specific command.
During data storage device operation, data of multiple blocks of a non-volatile memory device, logically grouped as a jumboblock, may be protected by an exclusive or (XOR) signature, where the XOR signature may be used to recover data of a block of the multiple blocks. During a recovery/relocation operation, data of the jumboblock is read from the non-volatile memory device during the recovery of the lost data and again when the data is relocated. However, because the data read during data storage device operation is temporarily stored in a volatile memory device, the controller utilizes the relevant data stored in the volatile memory device and the data stored in the non-volatile memory device to recover corrupted data. Thus, the amount of reads from the non-volatile memory device decreases due to the relevant data is read from the volatile memory device, which may improve data storage device performance.
A memory device includes a lower source-level semiconductor layer, a source contact layer, and an upper source-level semiconductor layer, an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, the upper source-level semiconductor layer, and the source contact layer, and a memory opening fill structure located in the memory opening and including a memory film and a vertical semiconductor layer having a surface segment that contacts the source contact layer. In one embodiment, the upper source-level semiconductor layer may be locally thickened to provide sufficient etch resistance during formation of a lateral isolation trench. In another embodiment, a sacrificial line trench fill structure may be employed as an etch stop structure during formation of a lateral isolation trench.
H01L 27/00 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L 21/77 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
In order to guarantee data validity of data read from a memory device of the data storage device to a host device, a controller of the data storage device may calculate a cyclic redundancy code (CRC) signature of the decoded data and compare the CRC signature of the decoded data with a CRC signature of the data. The CRC signature of the data is generated during a write operation of the data to the memory device. Rather than returning an uncorrectable error correction code error (UECC) error to the host device when the CRC signature of the decoded data does not match the CRC signature of the data, the controller executes the read command again. By using a different buffer to store the decoded data, the controller may confirm whether the error stemmed from the read path or the error was not from the read path.
A method of forming three-dimensional memory device includes forming an alternating stack of insulating layers and semiconductor material layers over a substrate, and forming laterally alternating sequences of laterally-insulated electrode structures and dielectric isolation pillar structures through the alternating stack. At least a portion of the laterally-insulated electrode structures each include a memory film and a word line electrode.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
A memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through each layer within the alternating stack, a memory opening fill structure located in the memory opening and including a vertical stack of memory elements a vertical semiconductor channel, and a contact via structure. The contact via structure includes a conductive pillar portion vertically extending at least from a first horizontal plane including a bottommost surface of the alternating stack to a second horizontal plane including a topmost surface of the alternating stack, and an annular conductive fin portion laterally protruding from the conductive pillar portion and contacting one of the electrically conductive layers. A vertical stack of annular insulating plates laterally surrounds the conductive pillar portion and underlies the conductive fin portion.
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
60.
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING BACKSIDE SEMICONDUCTOR SOURCE STRUCTURE AND METHODS FOR FORMING THE SAME
A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers located on a semiconductor layer, a memory opening vertically extending through the alternating stack and the semiconductor layer, a memory opening fill structure located in the memory opening and containing a memory film and a vertical semiconductor channel, and a backside semiconductor source structure including a doped semiconductor material. The backside semiconductor source structure may be polycrystalline or single crystalline.
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
61.
DISTRIBUTED TEMPERATURE SENSING SCHEME TO SUPPRESS PEAK ICC IN NON-VOLATILE MEMORIES
To reduce Icc spikes during the operation of a non-volatile memory device, a distributed temperature sensing system individually monitors each plane of a memory die during memory operations. Icc levels during a memory operation are temperature dependent. By monitoring the temperature of the individual memory planes during an operation, the bias levels for performing the operation can be changed during the course of that operation in order to reduce Icc spikes during the operation. For example, during a write operation if the temperature increase of a plane exceeds a threshold during earlier programming loops, the bias conditions, such as word line or bit line bias voltages, can be altered for later programming loops of the write operation.
G11C 7/04 - Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
A memory device includes an alternating stack comprising silicon oxycarbide layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and containing a vertical semiconductor channel and a memory film including a ferroelectric material layer in direct contact with sidewalls the electrically conductive layers.
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
H10B 51/10 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
63.
SOLID-STATE DRIVE SECURE DATA WIPING FOR REUSE AND RECYCLING
A process for reliably erasing data from a solid-state drive (SSD) includes first, prior to user data being stored on the drive, generating a restore image of information stored on the drive which characterizes a restore state of the drive, such as a factory image. Then, imparting energy to the drive to promote electrons representing bits in corresponding memory cells to exit the cells, such as imparting thermal energy or high-energy electromagnetic radiation to the drive. Also, generating a set of quantitative data for verifying erasure of the data for presentation to the user helps ensure trust in the data wipe process. The drive may also be electrically erased prior to imparting energy to the SSD, to provide another level of confidence in the data wipe process. The restore image may then be loaded to the necessary locations on the wiped drive to restore drive functionality.
A data storage device includes a memory device and a controller coupled to the memory device. The controller includes a decoder multiplexer (mux) module, a plurality of request/response channels coupled to the decoder mux module, an arithmetic pipeline module coupled to the plurality of request/response channels, an arbiter module coupled to the plurality of request/response channels and the arithmetic pipeline module, a mux/arbiter module coupled to the arithmetic pipeline module, a random access memory (RAM) access module coupled to the decoder mux module and the mux/arbiter module, and a RAM coupled to the mux/arbiter module. The controller is configured to determine a pipeline depth value and a calculation parallelism value of the arithmetic pipeline module and configure the arithmetic pipeline module based on the determining.
A data storage device and method are disclosed for host-controlled data compression. In one embodiment, a data storage device is provided comprising a memory and a controller configured to communicate with the memory. The controller is further configured to selectively compress target data, wherein the target data is only compressed in response to receiving a compression request from a host; receive the compression request from the host; and in response to receiving the compression request from the host, compress the target data. Other embodiments are disclosed.
A data storage device is configured to boost either capacity or performance using a set of reserve memory blocks. The data storage device includes a storage media and control circuitry. The storage media includes first set of memory blocks at a first capacity level and a first performance level and a reserve set of memory blocks. The control circuitry is configured to, in response to receiving a selection of a first storage mode from a user, allocate the reserve set of memory blocks to provide a second performance level greater than the first performance level. The control circuitry is further configured to, in response to receiving a selection of a second storage mode from the user, allocate the reserve set of memory blocks to provide a second capacity level greater than the first capacity level.
Systems and methods are disclosed for providing host-independent disk optimization and data operations. In certain embodiments, a data storage device includes a non-volatile memory; a pinhole button configured to be pressed; and a controller configured to: detect that the pinhole button is pressed; detect that the data storage device is coupled to a direct-current (DC) power supply; and initiate a disk optimization operation for the data storage device. In some embodiments, the controller can be configured to initiate a data operation, such as an authentication or data accessibility operation, a data security operation, etc., for example, in addition to or instead of a disk optimization operation.
The present disclosure generally relates to ensuring a data storage device consumes as little power as possible. Different HW modules in the data storage device can operate at different frequencies to ensure any bottleneck HW modules operate at as fast a frequency as possible, while non-bottleneck HW modules operate at slower frequencies and hence, consume less power. The frequency for each HW modules is dynamic and is adjusted based upon detected bottlenecks so that the data storage device can operate as efficiently as possible and consume as little power as possible.
Systems and methods are disclosed for providing host-independent format operations in data storage devices. In certain embodiments, a data storage device includes a non-volatile memory; a pinhole button configured to be pressed; and a controller configured to: detect that the pinhole button is pressed; detect that the data storage device is coupled to a direct-current (DC) power supply; and initiate formatting of the data storage device or a factory reset of the data storage device.
A data storage device includes storage media and control circuitry and is configured to enable the creation of partitions with different performance levels. The storage media includes a first set and a second set of memory blocks having different performance levels. The control circuitry is configured to: in response to a request from a host system, provide performance data from the first set of memory blocks and the second set of memory blocks to the host system. The control circuitry is further configured to: receive partition settings from the host system, the partition settings creating a first partition including at least part of the first set of memory blocks and a second partition including at least part of the second set of memory blocks, wherein the first partition has a better performance level than the second partition; and save the partition settings to the storage media.
In a storage system having a plurality of solid state drives (SSDs), the performance of propagating data from a primary device to each secondary device may be improved using a dedicated high speed data channel in which data and commands associated with the data is sent from an upstream SSD to a downstream SSD. The data is also sent to the downstream SSD after a minimum amount of data has been programmed to the upstream SSD. The downstream SSD begins programming the data to its own memory device after receiving the data. The programming of data to each SSD of the storage system may be in parallel and at least partially concurrent with each other. Data, commands, and control messages may be sent an upstream SSD via a serial bus or a universal asynchronous receiver-transmitter channel, such that the downstream data paths and the upstream data paths are distinct.
A three-dimensional memory device includes primary source side select gate electrodes located between word lines and bottom source side select gate electrodes. The primary source side select gate electrodes are laterally separated in each memory block, while the word lines and the bottom source side select gate electrodes are not laterally separated in each memory block.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 51/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
A data storage device and method are provided for predictable low-latency in a time-sensitive environment. In one embodiment, a data storage device is provided comprising a memory and a controller configured to communicate with the memory. The controller is further configured to: receive, from a host, an indication of a logical block address range that the host will later read; and in response to receiving the indication: read data from the logical block address range; and perform an action on the data to reduce a read latency when the host later reads the logical block address range. Other embodiments are disclosed.
A data storage device and method are provided for performing an action on an area of memory to satisfy a host-provided target operating condition. In one embodiment, a controller of the data storage device is configured to: receive, from a host, an identification of an area of the memory and a target operating condition for the area of the memory; monitor the area of the memory to determine whether the area of the memory satisfies the target operating condition; and in response to determining that the area of the memory does not satisfy the target operating condition, perform an action on the area of the memory to attempt to cause the area of the memory to satisfy the target operating condition. Other embodiments are provided, and each of the embodiments can be used alone or in combination.
In order to ensure that a bandwidth allocated to each tenant of a plurality of tenants of a data storage device is maintained, a controller of the data storage device may split a large read command, received from a host device, into a plurality of chunks, where each chunk corresponds to a distinct portion of the split large read command. Because the allocated bandwidth for a tenant is static, one or more chunks of the plurality of chunks, up to the allocated bandwidth, are executed, such that the bandwidth required to perform the one or more chunks does not exceed the allocated bandwidth for the particular tenant. Split information is added to the plurality of chunks in order to maintain coherency when executing the one or more chunks. Therefore, the agreed-upon allocated bandwidth for each tenant is maintained while performing large read commands requiring more bandwidth than allocated.
A non-volatile memory comprises a non-volatile memory structure that includes non-volatile memory cells. The non-volatile memory adjusts a ramp rate of a voltage signal applied to the non-volatile memory structure as part of a memory operation for the non-volatile memory cells. The adjusting the ramp rate is performed during the ramping up of the voltage signal and is based on voltage magnitude of the voltage signal at a particular time during the ramping up of the voltage signal.
A memory device includes an alternating stack including insulating layers and electrically conductive layers and a tapered sidewall that laterally extends along a first horizontal direction and an inclined along a second horizontal direction, memory opening fill structures extending through each layer within the alternating stack and including memory elements and a vertical semiconductor channel, a cavity in the alternating stack bounded laterally by the tapered sidewall, and having a bottom surface including stepped surfaces of at least some of the electrically conductive layers, an insulating liner located over the tapered sidewall in the cavity, and electrically conductive strips which are adjoined to a respective one of the stepped surfaces at the bottom surface of the cavity, which extend over the insulating liner and the tapered sidewall in the cavity, and which include a respective topmost portion that is located above the topmost surface of the alternating stack.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 41/50 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
78.
DATA STORAGE DEVICE AND METHOD FOR PROVIDING EXTERNAL-INTERRUPT-BASED CUSTOMIZED BEHAVIOR
A data storage device and method are disclosed for providing external-interrupt-based customized behavior. In one embodiment, a data storage device is provided comprising a memory and a controller configured to communicate with the memory. The controller is further configured to: receive an interrupt from a host indicating that a user is experiencing a performance problem with the data storage device; and in response to receiving the interrupt, take an action to address an issue in the data storage device that is causing the performance problem. Other embodiments are disclosed.
A non-volatile memory includes non-volatile memory cells divided into blocks, bit lines connected to the blocks, and a source line connected to the blocks. Each block includes multiple sub-blocks. Each sub-block includes multiple source side Gate Induced Drain Leakage ("GIDL") generation transistors that are closer to the source line than the bit lines. GIDL generation transistors for each sub-block can be controlled separately from GIDL generation transistors for other sub-blocks of the same sub-block so that sub-blocks can be separately and independently erased and/or GIDL can be used to inhibit unselected sub-blocks from bring disturbed during programming.
A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and comprising a memory film, a vertical semiconductor channel, and a semiconductor cap structure that includes a semiconductor core structure contacting a bottom end of the vertical semiconductor channel and an annular semiconductor structure laterally surrounding the semiconductor core structure and having a lesser vertical extent than the semiconductor core structure, and a source layer contacting a bottom surface of the semiconductor core structure.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
H10B 51/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
H10B 51/50 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the boundary region between the core and peripheral circuit regions
H10B 51/10 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
81.
THREE-DIMENSIONAL MEMORY DEVICES INCLUDING SELF-ALIGNED SOURCE-CHANNEL JUNCTIONS AND METHODS FOR FORMING THE SAME
A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a memory film, a vertical semiconductor channel, and a semiconductor source cap structure which is at least partially laterally surrounded by the memory film and which contacts the vertical semiconductor channel, and a source layer contacting at least a first end surface segment of the semiconductor source cap structure.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
A non-volatile memory includes non-volatile memory cells divided into blocks, bit lines connected to the blocks, and a source line connected to the blocks. Each block includes multiple sub-blocks. Each sub-block includes multiple source side Gate Induced Drain Leakage ("GIDL") generation transistors that are closer to the source line than the bit lines. GIDL generation transistors for each sub-block can be controlled separately from GIDL generation transistors for other sub-blocks of the same sub-block so that sub-blocks can be separately and independently erased and/or GIDL can be used to inhibit unselected sub-blocks from bring disturbed during programming.
A non-volatile memory is configured to transition memory cells from programmed data states with the higher ranges of threshold voltages to programmed data states with the lower ranges of threshold voltages without the transitioning the memory cells to the erased data state.
H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G11C 16/14 - Circuits for erasing electrically, e.g. erase voltage switching circuits
G06F 3/06 - Digital input from, or digital output to, record carriers
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
84.
CONTROL GATE SIGNAL FOR DATA RETENTION IN NONVOLATILE MEMORY
The nonvolatile memory includes a plurality of nonvolatile memory cells configured to store multiple data states; a word line connected to a control gate of at least one of the plurality of non-volatile memory cells; a control gate line to supply a control gate signal; a word line switch connected between the word line and the control gate line to control the potential applied to the word line from the control gate line; and a memory controller circuit. The memory controller circuit is configured to control a word line potential on the word line and a control gate potential on the control gate line and to control a state of the control gate. The memory controller circuit, when the nonvolatile memory transitions to a not-on state, is further configured to turn off the word line switch and to charge the control gate line to a charged potential.
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
85.
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGE STRUCTURES HAVING DIFFERENT VOLUMES AND METHODS OF FORMING THE SAME
A three-dimensional memory device includes at least one alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the at least one alternating stack, memory opening fill structures located in the memory openings, and a laterally-extending trench fill structure contacting a first lengthwise sidewall of the at least one alternating stack, and including a first-type dielectric bridge structure having a first volume, a second-type dielectric bridge structure having a second volume greater than the first volume, and a trench dielectric material portion.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H01L 29/792 - Field-effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistor
A semiconductor structure includes alternating stacks of insulating layers and electrically conductive layers which are located over a substrate and are laterally spaced apart among one another by first backside trenches and second backside trenches that are interlaced along a horizontal direction, first backside trench fill structures located in the first backside trenches, and second backside trench fill structures located in the second backside trenches. Each of the first backside trench fill structures includes a respective set of first backside bridge support structures comprising a first material, and each of the second backside trench fill structures includes a respective set of second backside bridge support structures comprising a second material that is different from the first material.
H01L 23/528 - Layout of the interconnection structure
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
87.
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ETCH STOP METAL PLATES FOR BACKSIDE VIA STRUCTURES AND METHODS FOR FORMING THE SAME
A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers that is located on a front side of a source layer, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, a dielectric material portion laterally offset from the alternating stack, a connection via structure vertically extending through the dielectric material portion and contacting a front side surface of a metallic plate, and a backside contact pad in electrical contact with the metallic plate.
H01L 23/528 - Layout of the interconnection structure
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
H01L 23/522 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
88.
PREDICTIVE ADJUSTMENT OF MULTI-CAMERA SURVEILLANCE VIDEO DATA CAPTURE
Systems, video cameras, and methods for predictive adjustment of multi-camera surveillance video data capture are described. A plurality of networked video camera is deployed with known spatial relationships and non-overlapping fields of view among cameras. When a video event is detected from video data for one of the video cameras, a video capture update message is selectively sent to other video cameras to modify their video capture operations. For example, an object detected by one camera may trigger adjustment of video capture operating parameters for cameras in a direction of travel of the object before it has entered the field of view of those other cameras.
A data storage device and method for optimized refresh are provided. In one embodiment, a data storage device is provided comprising a memory and a controller. The controller is configured to: receive, from a host, an identification of a location in the memory; calculate an estimated time to refresh the location in the memory; send the estimated time to the host; and refresh the location in the memory. Other embodiments are provided, and each of the embodiments can be used alone or in combination.
A memory device includes layer stacks, each including a respective alternating stack of respective insulating layers and respective electrically conductive layers and a respective contact-level dielectric layer, memory openings vertically extending through a respective one of the alternating stacks. memory opening fill structures located in a respective one of the memory openings and including a respective vertical stack of memory elements and a respective vertical semiconductor channel, and dielectric bridges structures located within access trenches that laterally separate the layer stacks. Each of the dielectric bridge structures includes a respective pair of contoured sidewalls. Each contoured sidewall of the dielectric bridge structures includes at least two vertically-straight and horizontally-convex surface segments that are adjoined by a vertically-extending edge. Access trench fill structures are located in the access trenches and each access trench fill structure embed a respective subset of the dielectric bridge structures.
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 51/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
H10B 51/10 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
Rather than having unused die blocks, partial die blocks can contribute to a super block. In so doing, as much of the available physical capacity of the data storage device may be achieved. The result could be an increase in over provisioning (OP) and good capacity for the data storage device or an increase in die yield. An increase in good capacity through the use of previously unused physical blocks would lead to an increase in performance and endurance. A yield increase would result in a reduction in cost per die and per data storage device. A partial die block is the solution.
A device structure includes an alternating stack of insulating layers and electrically conductive layers, a stepped dielectric material portion overlying and laterally contacting the alternating stack in the staircase region, and memory opening fill structures extending through the alternating stack. The electrically conductive layers include first electrically conductive layers and second electrically conductive layers overlying the first electrically conductive layers. Coaxial double contact via structures vertically extend through the stepped dielectric material portion. Each of the coaxial double contact via structures includes a respective inner layer contact via structure contacting a respective one of the first electrically conductive layers, and a respective outer layer contact via structure that laterally surrounds the respective inner layer contact via structure and contacts a respective one of the second electrically conductive layers.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H01L 23/00 - Details of semiconductor or other solid state devices
H01L 25/00 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
H10B 80/00 - Assemblies of multiple devices comprising at least one memory device covered by this subclass
A controller memory buffer (CMB) is a portion of volatile memory of a controller of a data storage device that is allocated to a host device for use by the host device. When the CMB is not fully utilized, the controller may determine that at least a portion of the unutilized space of the CMB may be used for non-host data. The at least a portion is based on a number of past workloads and a current workload of the CMB. An amount of available space of the CMB that the controller may utilize is dependent on the number of past workloads and the current workload of the CMB. Thus, the volatile memory of the controller may be more optimally utilized.
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, an array of memory openings vertically extending through the alternating stack, memory-opening-free areas located in the array of the memory openings in a plan view, an array of memory opening fill structures located in the array of memory openings, and layer contact assemblies located within the memory-opening-free areas in the plan view. Each of the memory opening fill structures includes a respective vertical semiconductor channel and respective memory elements located at levels of the electrically conductive layers. Each of the layer contact assemblies includes a respective layer contact via structure contacting a respective one of the electrically conductive layers, and a respective insulating spacer that laterally surrounds the respective layer contact via structure.
H10B 43/35 - EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
H10B 41/35 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/27 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 41/10 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
H10B 43/40 - EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
H10B 41/41 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
H01L 25/18 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices the devices being of types provided for in two or more different main groups of the same subclass of , , , , or
The present disclosure generally relates to an embedded physical layer (EPHY) for a field programmable gate array (FPGA). The EPHY for the FPGA is for a testing device that can receive and transmit in both the high speed PHYs, as well as low speed PHYs, such as MIPI PHYS (MPHYs), to meet universal flash storage (UFS) specifications. The testing device with the EPHY for the FPGA provides flexibility to support any specification updates without the need of application specific (ASIC) production cycles.
G01R 31/3183 - Generation of test inputs, e.g. test vectors, patterns or sequences
G01R 31/00 - Arrangements for testing electric propertiesArrangements for locating electric faultsArrangements for electrical testing characterised by what is being tested not provided for elsewhere
G06F 1/04 - Generating or distributing clock signals or signals derived directly therefrom
G06F 7/64 - Digital differential analysers, i.e. computing devices for differentiation, integration or solving differential or integral equations, using pulses representing incrementsOther incremental computing devices for solving difference equations
G06F 30/347 - Physical level, e.g. placement or routing
A data storage device including, in one implementation, a number of memory die packages disposed on a substrate within the data storage device. Each memory die package has a die density that includes one or more memory dies. The die density of each memory die package is configured to provide an even thermal distribution across the number of memory die packages. The respective die densities of two memory of the die packages are different from each other.
G06F 30/367 - Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
G06F 30/392 - Floor-planning or layout, e.g. partitioning or placement
G06F 30/398 - Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
G06F 119/02 - Reliability analysis or reliability optimisationFailure analysis, e.g. worst case scenario performance, failure mode and effects analysis [FMEA]
G06F 119/06 - Power analysis or power optimisation
G06F 119/08 - Thermal analysis or thermal optimisation
H01L 23/367 - Cooling facilitated by shape of device
97.
THREE-DIMENSIONAL MEMORY DEVICE WITH THROUGH-STACK CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME
A memory device includes a first alternating stack of first insulating layers and first electrically conductive layers, a first dielectric material portion overlying first stepped surfaces of the first alternating stack, a memory opening vertically extending through the first alternating stack, a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and a vertical stack of memory elements, and a first contact via structure vertically extending through the first alternating stack and the first dielectric material portion. The first contact via structure includes a conductive pillar portion and a conductive fin portion that laterally protrudes from the conductive pillar portion and having a first annular bottom surface segment contacting an annular top surface segment of one of the first electrically conductive layers.
H10B 43/27 - EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/50 - EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
H10B 43/10 - EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
H10B 51/30 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
H10B 51/50 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the boundary region between the core and peripheral circuit regions
H10B 51/10 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the top-view layout
The present disclosure generally relates to methods of operating storage devices. The storage device comprises a controller and a media unit. The capacity of the media unit is divided into a plurality of zones. The controller is configured to make informed use of errors by update zone metadata to indicate one or more first logical block addresses were skipped and to indicate the next valid logical block address is available to store data. The controller is further configured to update zone metadata to recommend to the host device to reset one or more full zones, to recommend to the host device to transition one or more open zones to a full state, to alert the host device that one or more open zones have been transitioned to the full state, and to notify the host device of the writeable zone capacity of each of the plurality of zones.
G06F 3/06 - Digital input from, or digital output to, record carriers
G06F 11/20 - Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
The present disclosure generally relates to methods of operating storage devices. The storage device comprises a controller comprising first random access memory (RAM1), second random access memory (RAM2), and a storage unit divided into a plurality of streams. When a write command is received to write data to a stream, change log data is generated and stored in the RAM1, the previous delta data for the stream is copied from the RAM2 to the RAM1 to be updated with the change log data, and the updated delta data is copied to the RAM2. The delta data stored in the RAM2 is copied to the storage unit periodically. The controller tracks which delta data has been copied to the RAM2 and to the storage unit. During a power failure, the delta data and the change log data are copied from the RAM1 or the RAM2 to the storage unit.
G06F 3/06 - Digital input from, or digital output to, record carriers
G06F 1/30 - Means for acting in the event of power-supply failure or interruption, e.g. power-supply fluctuations
G06F 12/0804 - Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
Improved automation can be achieved using command-parts. Rather than using a command to determine which key to use, command partitioning will generate a task-ID based on a key index table to determine what key to use. Based on the task-ID, an encryption engine (XTS) will know which key to use. The command is split into partitions with the same attributes. The amount of task-IDs created will equal the amount of partitions. Automation will be based on the task-IDs to create a completion for a host. The controller will then return to the key index table to count the completed commands and send the completion to the host.
