Systems and methods for operating of one or more devices before, during, and/or after a power-save mode are provided. The system may include a transmitter device that configures the differential signal lines to low- impedance and a predetermined low- voltage during the power-save mode (such as connecting the differential signal lines to ground). The system may also include a receiver device that senses a wake-up signal, determines the type of wake-up signal, and wakes-up according to the type of wake-up signal.
A controller coupled to a memory array includes an error correction coding (ECC) engine and an ECC enhancement compression module coupled to the ECC engine. The ECC enhancement compression module is configured to receive and compress control data to be provided to the ECC engine to be encoded. Compressed encoded control data generated at the ECC engine is stored as a codeword at the memory array.
A charge pump system for supplying an output voltage to a load is described. The charge pump system includes a charge pump connected to receive an input voltage generate from it the output voltage. The system also includes regulation circuitry connected to receive the output voltage and a reference voltage, where the regulation circuitry is connected to the charge pump to regulate the output voltage based upon the values of the reference voltage and the output voltage. During ramp up or a recovery operation the output voltage is initially regulated according to a first level and subsequently regulated to a second level higher than the first level, the second level corresponding to a desired regulated output voltage.
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
H03K 19/00 - Logic circuits, i.e. having at least two inputs acting on one outputInverting circuits
4.
DYNAMICALLY ADJUSTABLE ERASE AND PROGRAM LEVELS FOR NON-VOLATILE MEMORY
Degradation of non-volatile storage elements is reduced by adaptively adjusting erase-verify levels and program-verify levels. The number of erase pulses, (1) or the highest erase pulse amplitude, needed to complete an erase operation is determined. When the number, or amplitude, reaches a limit (2), the erase-verify level is increased (3). As the erase-verify level is increased, the number of required erase pulses decreases since the erase operation can be completed more easily. An accelerating increase in the degradation is thus avoided. One or more program- verify levels can also be increased in concert with changes in the erase-verify level. The one or more program- verify levels can increase by the same increment as the erase-verify level to maintain a constant threshold voltage window between the erased state and a programmed state, or by a different increment. Implementations with binary or multi-level storage elements are provided. (1) =1124,1132), (2) = 1136). (3)1138)
Techniques are disclosed herein for applying different process steps to single- level cell (SLC) blocks in a memory array than to multi-level cell (MLC) blocks such that the SLC blocks will have high endurance and the MLC blocks will have high reliability. In some aspects, different doping is used in the MLC blocks than the SLC blocks. In some aspects, different isolation is used in the MLC blocks than the SLC blocks. Techniques are disclosed that apply different read parameters depending on how many times a block has been programmed/erased. Therefore, blocks that have been cycled many times are read using different parameters than blocks that have been cycled fewer times.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
6.
MANAGING ACCESS TO AN ADDRESS RANGE IN A STORAGE DEVICE
Enhanced configuration of security and access control for data in a storage device is disclosed. A request is received to access an addressable memory location in a storage media within the storage device. A set of addressable memory locations with contiguous addresses identified by an address range is associated with first and second characteristics. The first characteristic is applied if the addressable memory location is within the set of addressable memory locations, and an entity is currently authenticated to and authorized to access the set of addressable memory locations. The second characteristic is applied if the addressable memory location is within the set of addressable memory locations, and no entity is currently authenticated to and authorized to access the set of addressable memory locations. The set of addressable memory locations can also be a logical partition, where the first and second characteristics are stored in a logical partition table.
The embodiments described herein generally use a challenge to protect a removable mobile flash memory storage device, where the challenge may be in the form of a "Completely Automated Public Turing Test to Tell Computers and Humans Apart" ("CAPTCHA"). In one embodiment, a method is provided in which a removable mobile flash memory storage device receives a command from a host device, generates a CAPTCHA challenge, provides the CAPTCHA challenge to the host device, receives a response to the CAPTCHA challenge from the host device, determines if the response satisfies the CAPTCHA challenge, and performs the command only if the response satisfies the CAPTCHA challenge. In another embodiment, a removable mobile flash memory storage device is provided for performing these acts.
Techniques are disclosed to refresh data in a non-volatile storage device often enough to combat erroneous or corrupted data bits, but not so often as to interfere with memory access or to cause excessive stress on the memory cells. One embodiment includes determining to perform a refresh of data stored in a first group of non- volatile storage elements in a device based on a condition of data in the first group, determining that a second group of non-volatile storage elements in the device should undergo a refresh procedure based on when the second group of non-volatile storage elements were last programmed relative to when the first group of non- volatile storage elements were last programmed, and performing the refresh procedure on the second group of non-volatile storage element.
Methods and devices of the invention include an electrostatic discharge (ESD) protection circuit. This circuit includes rise time dependent activation circuitry capable of detecting a slew rate of an input signal and capable of determining whether the slew rate of the input signal is greater than a threshold value. For an ESD event said activation circuitry generates a trigger signal. Additionally, the activation circuitry is coupled with the ESD dissipation duration control circuitry which is further coupled with an ESD dissipation circuit. This arrangement enabling the duration control circuit to be activated by the trigger signal which responds by producing an activation signal that activates the ESD dissipation circuitry and that controls the length of time the dissipation circuit remains active. The ESD dissipation circuitry includes a shunt that redirects the ESD energy away from the protected internal circuit. The ESD dissipation duration circuitry further configured to maintain shunting of the energy for a period of time sufficient to discharge of the ESD energy without damaging the protected circuitry.
H03K 17/0812 - Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
H01L 27/02 - Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H02H 9/04 - Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
H03K 19/003 - Modifications for increasing the reliability
10.
SENSING CIRCUIT AND METHOD WITH REDUCED SUSCEPTIBILITY TO SPATIAL AND TEMPERATURE VARIATIONS
A sense amplifier is disclosed. One embodiment is a sensing circuit (106) that includes a sensing device (104) and a sense transistor (287) coupled to the sensing device. A first switch (288) that is coupled to the sense transistor and to the sensing device causes the sensing device to be charged to a first voltage that is a function of the threshold voltage of the sense transistor. One or more second switches (282, 293, 291, 289) that are coupled to the sensing device and to a target element (10). The second switches couple the sensing device to the target element to modify the first voltage on the sensing device and decouple the target element from the sensing device during a sense phase in which the modified first voltage is applied to the sense transistor. A condition of the target element is determined based on whether or not the sense transistor turns on in response to applying the modified first voltage to the sense transistor.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/26 - Sensing or reading circuitsData output circuits
A method is presented of setting a frequency of a clock for a charge pump system including the clock and a charge pump. This includes setting an initial value for the frequency of the clock and, while operating the charge pump system using the clock running at the initial frequency value, determining the ramp rate of an output voltage for the charge pump during a recovery phase. The frequency of the clock is then adjusted so that the ramp rate of the output voltage for the charge pump during the recovery phase falls in a range not exceeding a predetermined maximum rate. A charge pump system is also described that includes a register having a settable value, where the charge pump clock frequency is responsive to the register value, and count and comparison circuitry is connectable to receive the pump's output voltage and the clock signal and determine from them the number of clock cycles the charge pump uses to recover from a reset value to a predetermined value.
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
A page of non-volatile multi-level memory cells on a word line is sensed in parallel by sense amps via bit lines. A predetermined input sensing voltage as an increasing function of time applied to the word line allows scanning of the entire range of thresholds of the memory cell in one sweep. Sensing of the thresholds of individual cells is then reduced to a time-domain sensing by noting the times the individual cells become conducting. Each conducting time, adjusted for delays in the word line and the bit line, can be used to derive the sensing voltage level that developed at the word line local to the cell when the cell became conducting. The locally developed sensing voltage level yields the threshold of the cell. This time-domain sensing is relative insensitive to the number of levels of a multi-level memory and therefore resolve many levels rapidly in one sweep.
G11C 16/26 - Sensing or reading circuitsData output circuits
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
13.
NON-VOLATILE MEMORY AND METHOD FOR SENSING WITH PIPELINED CORRECTIONS FOR NEIGHBORING PERTURBATIONS
A page of non-volatile multi-level storage elements on a word line WLn is sensed in parallel while compensating for perturbations from a neighboring page on an adjacent word line WLn+1. First, the programmed thresholds of storage elements on WLn+1 are sensed in the time domain and encoded as time markers. This is accomplished by a scanning sense voltage increasing with time. The time marker of a storage element indicates the time the storage element starts to conduct or equivalently when the scanning sense voltage has reached the threshold of the storage element. Secondly, the page on WLn is sensed while the same scanning voltage with an offset level is applied to WLn+1 as compensation. In particular, a storage element on WLn will be sensed at a time indicated by the time marker of an adjacent storage element on WLn+1, the time when the offset scanning voltage develops an appropriate compensating bias voltage on WLn+1.
Techniques for the management of spare blocks in re-programmable non-volatile memory system, such as a flash EEPROM system, are presented. In one set of techniques, for a memory partitioned into two sections (for example a binary section and a multi-state section), where blocks of one section are more prone to error, spare blocks can be transferred from the more error prone partition to the less error prone partition. In another set of techniques for a memory partitioned into two sections, blocks which fail in the more error prone partition are transferred to serve as spare blocks in the other partition. In a complementary set of techniques, a 1-bit time stamp is maintained for free blocks to determine whether the block has been written recently. Other techniques allow for spare blocks to be managed by way of a logical to physical conversion table by assigning them logical addresses that exceed the logical address space of which a host is aware.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 29/00 - Checking stores for correct operationTesting stores during standby or offline operation
A method and system for relocating selected groups of data in a storage device having a non-volatile memory consisting partitions with different types of non-volatile memory. The method may include determining whether data received a first partition meets one or more heightened read probability criteria and/or heightened delete probability criteria. If the criteria are not met, the received data is moved to a second partition, where the first partition has a higher endurance than the second partition. The system may include a first non- volatile memory partition and a second non-volatile memory partition having a lower endurance than the first, where a controller in communication with the first and second partitions determines if a heightened read probability and/or a heightened delete probability are present in received data.
A portion of a nonvolatile memory is partitioned from a main multi-level memory array to operate as a cache. The cache memory is configured to store at less capacity per memory cell and finer granularity of write units compared to the main memory. In a block-oriented memory architecture, the cache has multiple functions, not merely to improve access speed, but is an integral part of a sequential update block system. Decisions to write data to the cache memory or directly to the main memory or decisions to archive data from the cache memory to the main memory depend on the attributes and characteristics of the data to be written, the state of the blocks in the main memory portion and the state of the blocks in the cache portion. The cache memory has a capacity dynamically increased by allocation of blocks from the main memory in response to a demand to increase the capacity. Preferably, a block with an endurance count higher than average is allocated. The logical addresses of data are partitioned into zones to limit the size of the indices for the cache.
A method and system maintains an address table for mapping logical groups to physical addresses in a memory device. The method includes receiving a request to set an entry in the address table and selecting and flushing entries in an address table cache depending on the existence of the entry in the cache and whether the cache meets a flushing threshold criteria. The flushed entries include less than the maximum capacity of the address table cache. The flushing threshold criteria includes whether the address table cache is full or if a page exceeds a threshold of changed entries. The address table and/or the address table cache may be stored in a non- volatile memory and/or a random access memory. Improved performance may result using this method and system due to the reduced number of write operations and time needed to partially flush the address table cache to the address table.
A method of controlling data access to non-volatile memory is disclosed. The method includes storing a data file in a non-volatile memory. The non-volatile memory includes a memory array addressable by a plurality of address ranges one or more of which corresponding to a protected portion of the memory array and one or more of which corresponding to an unprotected portion of the memory array. The method also includes communicating to a host device an indication that a memory request with respect to the protected portion of the memory array is denied. The indication is communicated for instructing the host device to avoid a timeout.
An erase sequence of a non-volatile storage device includes an erase operation (910) followed by a soft programming operation (930). The erase operation applies one or more erase pulses to the storage elements (920), e.g. via a substrate until an erase level is satisfied (924) The number of erase pulses is tracked and recorded ( (926) as an indicia of the number of programming-erase cycles which the storage device has experienced. The soft programming operation (930) applies soft programming pulses (944) to the storage elements until a soft programming verify level is satisfied (950). Based on the number of erase pulses, the soft programming operation time is shortened by skipping verify operations (946) for a specific number of initial soft programming pulses which is a function of the number of erase pulses. Also, a characteristic of the soft programming operation can be optimized, such as staring amplitude, step size or pulse duration.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C 16/16 - Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
20.
STORAGE DEVICE AND METHOD FOR DYNAMIC CONTENT TRACING
A storage device and method for dynamic content tracing are provided. In one embodiment, a storage device stores content having a plurality of sequences of data, each sequence of data having original data and at least one variation of the original data. The storage device receives an identifier of a host device and, for each sequence of data, selects either the original data or one of the at least one variation of the original data based on the identifier of the host device. The storage device then assembles a version of the content from the selections and provides the assembled version of the content to the host device. The assembled version of the content is unique to the host device and therefore can be used to trace the assembled version of the content back to the host device.
A programming technique reduces program disturb in a set of non-volatile storage elements by programming using selected bit line patterns which increase the clamped boosting potential of an inhibited channel to avoid program disturb. One aspect groups alternate pairs of adjacent bit lines into first and second sets. Dual programming pulses are applied to a selected word line. The first set of bit lines is programmed during the first pulse, and the second set of bit lines is programmed during the second pulse. A verify operation is then performed for all bit lines. When a particular bit line is inhibited, at least one of its neighbor bit lines will also be inhibited so that the channel of the particular bit line will be sufficiently boosted. Another aspect programs every third bit line separately. A modified layout allows adjacent pairs of bit lines to be sensed using odd-even sensing circuitry.
Multiple programming processes are performed for a plurality of nonvolatile storage elements. Each of the programming processes operate to program at least a subset of the non- volatile storage elements to a respective set of target conditions using program pulses. At least a subset of the programming processes include identifying a program pulse associated with achieving a particular result for a respective programming process and performing one or more sensing operations at one or more alternative results for the non-volatile storage elements. Subsequent programming process are adjusted based on a first alternative result and the identification of the program pulse if the one or more sensing operations determined that greater than a predetermined number of non-volatile storage elements achieved the first alternative result. Subsequent programming process are adjusted based on the identification of the program pulse if the one or more sensing operations determined that less than a required number of non- volatile storage elements achieved any of the alternative results.
Multiple programming processes are performed for a plurality of non-volatile storage elements. Each of the programming process operates to program at least a subset of the non-volatile storage elements to a set of target conditions using programming pulses. For at least a subset of the programming processes, a programming pulse associated with achieving an intermediate result for a respective programming process is identified, a pulse increment between programming pulses is decreased for the respective programming process while continuing the respective programming process to program non-volatile storage elements to the respective one or more targets and the identified programming pulse is used to adjust a starting programming voltage for a subsequent programming process.
A multiple pass programming scheme is optimized using capacitive coupling in the word line to word line direction during program-verify operations. A different pass voltage is used in different programming passes on an adjacent word line of a selected word line which is being verified. In particular, a lower pass voltage can be used in a first pass than in a second pass. The programming process may involve a word line look ahead or zigzag sequence in which WLn is programmed in a first pass, followed by WLn+ 1 in a first pass, followed by WLn in a second pass, followed by WLn+1 in a second pass. An initial programming pass may be performed before the first pass in which storage elements are programmed to an intermediate state and/or to a highest state.
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
25.
NONVOLATILE MEMORY AND METHOD WITH REDUCED PROGRAM VERIFY BY IGNORING FASTEST AND/OR SLOWEST PROGRAMMING BITS
A group of non-volatile memory cells are programmed in a programming pass by a series of incremental programming pulses where each pulse is followed by a program-verify and possibly program-inhibition step. Performance is improved during the programming pass by delayed starting and prematurely terminating the various verify levels that demarcate the multiple memory states. This amounts to skipping the verifying and inhibiting steps of the fastest and slowest programming (fringe) cells of the group. A reference pulse is established when the fastest cells have all been program-verified relative to a first verify level. The starting of what verify level at what pulse will then be delayed relative to the reference pulse. Verifying stops for a given verify level when only a predetermined number of cells remain unverified relative to that given level. Any errors arising from over- or under-programming of the fringe cells are corrected by an error correction code.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
26.
IMPROVING DATA RETENTION OF LAST WORD LINE OF NON-VOLATILE MEMORY ARRAYS
Techniques are disclosed herein for operating non-volatile storage. The techniques compensate for differences in floating gate coupling effect experienced by non- volatile storage elements on different word lines. An erase of a group of non-volatile storage elements is performed. (1102) A set of the non-volatile storage elements are for storing data and at least one of the non-volatile storage elements is a dummy that is not for storing data. The dummy is a neighbor to one of the data non-volatile storage elements. The data non volatile storage elements are programmed at some point after the erase (1104). Then, a programming voltage is applied to the dummy non-volatile storage element to increase the threshold voltage of the dummy to cause floating gate coupling effect to the neighbor non-volatile storage element to compensate for lesser floating gate coupling effect that the neighbor experienced during programming (1106).
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
27.
DATA STATE-BASED TEMPERATURE COMPENSATION DURING SENSING IN NON-VOLATILE MEMORY
Temperature effects in a non-volatile storage device are addressed by providing a data state-dependent, and optionally temperature dependent, sense current during verify and read operations. A different sense current (1) is provided for each data state (2), so that a common temperature coefficient (3) is realized for storage elements with different data states. The temperature coefficient for higher states can be reduced to that of lower states. During sensing, a sense time can be adjusted to achieve a desired sense current when a selected storage element is in a conductive state. A fixed voltage trip point may be maintained. During the sense time, a pre-charged capacitor discharges into a selected storage element such as via a bit line and NAND string, when the selected storage element is in a conductive state. The discharge level is translated to a current which is compared to a state-dependent, and optionally temperature dependent, reference current.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/26 - Sensing or reading circuitsData output circuits
28.
MULTI-PASS PROGRAMMING FOR MEMORY WITH REDUCED DATA STORAGE REQUIREMENT
Coupling effects between adjacent floating gates in a non-volatile storage device are reduced in a multi-pass programming operation, while reducing program data storage requirements. In one approach, storage elements are programmed in an out of sequence or zigzag word line order. A particular word line is programmed with a coarse program pass, after which another word line is programmed with a fine program pass, after which the particular word line is read. The particular word line is read before another word line is programmed with a coarse program pass which causes coupling interference to storage elements of the particular word line. The read data is subsequently used to perform a fine program pass for the particular word line. This avoids the need to store program data of multiple word lines concurrently, so that storage hardware can be reduced in size along with power consumption.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
29.
BUILT IN ON-CHIP DATA SCRAMBLER FOR NON-VOLATILE MEMORY
A non-volatile memory in which data is randomized before being stored in the non-volatile memory to minimize data pattern-related read failures. Randomizing is performed using circuitry on the memory die so that the memory die is portable relative to an external, off-chip controller. Circuitry on the memory die scrambles user data based on a key which is generated using a seed which is shifted according to a write address. Corresponding on-chip descrambling is also provided.
A ramp-down programming voltage is used to program a group of nonvolatile memory cells in parallel, step by step from a highest step to a lowest step. Overall programming time is improved when a conventional setup for program inhibit together with a verify after each program step are avoided. A program voltage estimate is provided for each cell indicating the programming voltage expected to program the cell to its target. Initially, all but those cells having estimates at or above the current program voltage step will be program-inhibited. Thereafter, with each descending program voltage step, additional cells will be un-inhibited. Once un-inhibited, a cell need not be re-inhibited even if programmed to its target. This is because subsequent program steps are at lower voltages and ineffective in programming the cell beyond its target. The un-inhibit operation in one implementation amounts to simply pulling the associated bit lines to ground.
G11C 16/12 - Programming voltage switching circuits
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
Technology for replacing a first storage unit operatively coupled to a device is provided. Content of the first storage unit is sent to a new storage unit that serves as the replacement of the first storage unit. In one embodiment, the content is first sent to a trusted third-party server and then transferred from the server to the new storage unit. A portion of the content on the new storage unit is adjusted in one embodiment to maintain content security features that were implemented in the first storage unit. The upgrading can be performed under the control of a software entity that is installed on the device. In various embodiments, the first storage unit may be bound to a third storage unit prior to the upgrade process. In such cases, the process can include measures to bind the new storage unit to the third storage unit.
Capacitive coupling from storage elements on adjacent bit lines is compensated by adjusting voltages applied to the adjacent bit lines. An initial rough read is performed to ascertain the data states of the bit line-adjacent storage elements, and during a subsequent fine read, bit line voltages are set based on the ascertained states and the current control gate read voltage which is applied to a selected word line. When the current control gate read voltage corresponds to a lower data state than the ascertained state of an adjacent storage element, a compensating bit line voltage is used. Compensation of coupling from a storage element on an adjacent word line can also be provided by applying different read pass voltages to the adjacent word line, and obtaining read data using a particular read pass voltage which is identified based on a data state of the word line-adjacent storage element.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
The operating firmware of a portable flash memory storage device is stored in the relatively large file storage memory, which is non executable. It is logically parsed into overlays to fit into an executable memory. The overlays can be of. differing sizes to organize function calls efficiently while minimizing dead space or unnecessarily separating functions that should be within one or a group of frequently accessed overlays. For an overlay having functions that require data allocation, the data allocation can cause eviction of the overlay. This self eviction is avoided altogether or after initial runtime and the evicted overlayis reloaded at an area outside that reserved for data.
A memory system is disclosed that includes a set of non-volatile storage elements. A given memory cell has a dielectric cap above the floating gate. In one embodiment, the dielectric cap resides between the floating gate and a conformal IPD layer. The dielectric cap reduces the leakage current between the floating gate and a control gate. The dielectric cap achieves this reduction by reducing the strength of the electric field at the top of the floating gate, which is where the electric field would be strongest without the dielectric cap for a floating gate having a narrow stem.
Read disturb is reduced in non-volatile storage. In one aspect, when a read command is received from a host for reading a selected word line, a word line which is not selected for reading is randomly chosen and its storage elements are sensed to determine optimized read compare levels for reading the selected word line. Or, a refresh operation may be indicated for the entire block based on an error correction metric obtained in reading the storage elements of the chosen word line. This is useful especially when the selected word line is repeatedly selected for reading, exposing the other word lines to additional read disturb. In another aspect, when multiple data states are stored, one read compare level is obtained from sensing, e.g., from a threshold voltage distribution, and other read compare levels are derived from a formula.
A non-volatile storage system can selectively perform one or more erase operations on a subset of non-volatile storage elements that are connected to a common word line (or other type of control line) without intentionally erasing other non-volatile storage elements that are connected to the common word line (or other type of control line) but not in the subset.
G11C 16/16 - Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C 16/14 - Circuits for erasing electrically, e.g. erase voltage switching circuits
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
37.
CORRECTING FOR OVER PROGRAMMING NON-VOLATILE STORAGE
A non-volatile storage system corrects over programmed memory cells by selectively performing one or more erase operations on a subset of non-volatile storage elements that are connected to a common word line (or other type of control line).
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G11C 16/16 - Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
38.
PROGRAMMING AND SELECTIVELY ERASING NON-VOLATILE STORAGE
A non- volatile storage system performs programming for a plurality of non-volatile storage elements and selectively performs re-erasing of at least a subset of the non-volatile storage elements that were supposed to remain erased, without intentionally erasing programmed data.
G11C 16/16 - Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
39.
METHOD OF WIRE BONDING A STACKOF SEMICONDUCTOR CHIPS IN AN OFFSET CONFIGURATION AND DEVICE OBTAINED BY SUCH A METHOD
A low profile semiconductor package is disclosed including at least first (102) and second (104) stacked semiconductor die mounted to a substrate (106) The first (102) semiconductor die may be electrically coupled to the substrate (106) with a plurality of band wires (120) in a forward ball bonding process. The second semiconductor die may in turn be electrically coupled to the first semiconductor die using a second set of band wires (130) bonded between the die bond pads (129, 134) of the first and second semiconductor die. The second set of band wires may each include a lead end having a band wire ball (136) that is bonded to the bond pads (134) of the second semiconductor die. The tail end of each band wire in the second set of band wires may be wedge bonded directly to lead end of a band wire in the first set of band wires.
H01L 21/60 - Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 23/49 - Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements consisting of soldered or bonded constructions wire-like
H01L 25/065 - Assemblies consisting of a plurality of individual semiconductor or other solid-state devices all the devices being of a type provided for in a single subclass of subclasses , , , , or , e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group
40.
IMPROVED PROGRAMMING ALGORITHM TO REDUCE DISTURB WITH MINIMAL EXTRA TIME PENALTY
Programming time is reduced in a non-volatile memory in a multi-pass programming process. In a first programming pass, high state cells are programmed by a sequence of program pulses to identify fast and slow high state cells, while lower state cells are locked out from programming. Once identified, the fast high state cells are temporarily locked out from programming while the slow high state cells continue being programmed to their final intended state. Further, the program pulses are sharply stepped up to program the slow high state cells. In a second programming pass, the fast high state cells are programmed along with the other, lower state cells, until they all reach their respective intended states. A time savings is realized compared to approaches in which all high state cells are programmed in the first programming pass.
A memory device storing a plurality of digital media files and playlists is disclosed. The memory device comprises a connector configured to be connected with a digital media player and a memory in communication with the connector. In one embodiment, each playlist is created by a curator. In another embodiment, at least one playlist specifies at least one digital media file that is not specified by another playlist in the plurality of playlists. In yet another embodiment, a first plurality of playlists are associated with a first channel, and a second plurality of playlists are associated with a second channel, wherein each playlist specifies a predetermined play order of at least some of the plurality of digital media files.
In a non-volatile memory a group of memory cells is programmed respectively to their target states in parallel using a multiple-pass index programming method which reduces the number of verify steps. For each cell a program index is maintained storing the last programming voltage applied to the cell. Each cell is indexed during a first programming pass with the application of a series of incrementing programming pulses. The first programming pass is followed by verification and one or more subsequent programming passes to trim any short-falls to the respective target states. If a cell fails to verify to its target state, its program index is incremented and allows the cell to be programmed by the next pulse from the last received pulse. The verify and programming pass are repeated until all the cells in the group are verified to their respective target states. No verify operations between pulses are necessary.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
A group of memory cells is programmed respectively to their target states in parallel using a multiple-pass programming method in which the programming voltages in the multiple passes are correlated. Each programming pass employs a programming voltage in the form of a staircase pulse train with a common step size, and each successive pass has the staircase pulse train offset from that of the previous pass by a predetermined offset level. The predetermined offset level is less than the common step size and may be less than or equal to the predetermined offset level of the previous pass. Thus, the same programming resolution can be achieved over multiple passes using fewer programming pulses than conventional method where each successive pass uses a programming staircase pulse train with a finer step size. The multiple pass programming serves to tighten the distribution of the programmed thresholds while reducing the overall number of programming pulses.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/04 - Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
A charge pump circuit for generating an output voltage is described. The charge pump includes an output generation section and a threshold voltage cancellation section, where these sections have the same structure including a first branch, which receives a first clock signal and provides a first output, and a second branch, which receives a second clock signal and provides a second output. The charge pump circuit also includes first and second transistors, where the first and second outputs of the output generation stage are respectively connected through the first and second transistors to provide the output voltage of the charge pump, and where the first and second outputs of the threshold voltage cancellation stage are respectively connected to the control gate the first and second transistors.
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
45.
ERASE-VERIFICATION PROCESS FOR NON-VOLATILE STORAGE
When erasing non-volatile storage, a verification process is used between erase operations to determine whether the non- volatile storage has been successfully erased. The verification process includes separately performing verification for different subsets of the non- volatile storage elements.
Sensing circuits for sensing a conduction current of a memory cell among a group of non-volatile memory cells being sensed in parallel and providing the result thereof to a data bus are presented. A precharge circuit is coupled to a node for charging the node to an initial voltage. An intermediate circuit is also coupled to the node and connectable to the memory cell, whereby current from the precharge circuit can be supplied to the memory cell. The circuit also includes a comparator circuit to perform a determination the conduction current by a rate of discharge at the node; a data latch coupled to the comparator circuit to hold the result of said determination; and a transfer gate coupled to the data latch to supply a result latched therein to the data bus independently of the node. This arrangement improves sensing performance and can help to eliminate noise on the analog sensing path during sensing and reduce switching current.
G11C 16/26 - Sensing or reading circuitsData output circuits
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
47.
COMPENSATING NON-VOLATILE STORAGE USING DIFFERENT PASS VOLTAGES DURING PROGRAM- VERIFY AND READ
Optimized verify and read pass voltages are obtained to improve read accuracy in a non-volatile storage device. The optimized voltages account for changes in unselected storage element resistance when the storage elements become programmed. This change in resistance is referred to as a front pattern effect. In one approach, the verify pass voltage is higher than the read pass voltage, and a common verify voltage is applied on the source and drain sides of a selected word line. In other approaches, different verify pass voltages are applied on the source and drain sides of the selected word line. An optimization process can include determining a metric for different sets of verify and read pass voltages. The metric can indicate threshold voltage width, read errors or a decoding time or number of iterations of an ECC decoding engine.
A set of code for a peripheral device is installed on a host device. The set of code is used to control access to the peripheral device from the host device. The set of code also contains one or more subsets of code that can be used by software entities on the host device for access to the peripheral device. A software entity on a host device must be successfully authenticated with the set of code installed on the host device. Once the software entity is successfully authenticated, the set of code will provide access to the one or more subsets of code specific to the software entity. The one or more subsets of code can be used by the software entity to access the peripheral device.
G06F 21/62 - Protecting access to data via a platform, e.g. using keys or access control rules
G06F 21/79 - Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data in semiconductor storage media, e.g. directly-addressable memories
49.
ENHANCED BIT-LINE PRE-CHARGE SCHEME FOR INCREASING CHANNEL BOOSTING IN NON-VOLATILE STORAGE
Channel boosting is improved in non-volatile storage to reduce program disturb. A pre-charge module voltage source is used to pre-charge bit lines during a programming operation. The pre-charge module voltage source is coupled to a substrate channel via the bit lines to boost the channel. An additional source of boosting is provided by electromagnetically coupling a voltage from a conductive element to the bit lines and the channel. To achieve this, the bit lines and the channel are allowed to float together by disconnecting the bit lines from the voltage sources. The conductive element can be a source line, power supply line or substrate body, for instance, which receives an increasing voltage during the pre-charging and is proximate to the bit lines.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
A method and system for storage address re-mapping in a multi-bank memory is disclosed. The method includes allocating logical addresses in blocks of clusters and re¬ mapping logical addresses into storage address space, where short runs of host data dispersed in logical address space are mapped in a contiguous manner into megablocks in storage address space. Independently in each bank, valid data is flushed within each respective bank from blocks having both valid and obsolete data to make new blocks available for receiving data in each bank of the multi-bank memory when an available number of new blocks falls below a desired threshold within a particular bank.
A non-volatile storage system in which a sidewall insulating layer of a floating gate is significantly thinner than a thickness of a bottom insulating layer, and in which raised source/drain regions are provided. During programming or erasing, tunneling occurs predominantly via the sidewall insulating layer and the raised source/drain regions instead of via the bottom insulating layer. The floating gate may have a uniform width or an inverted T shape. The raised source/drain regions may be epitaxially grown from the substrate, and may include a doped region above an undoped region so that the channel length is effectively extended from beneath the floating gate and up into the undoped regions, so that short channel effects are reduced. The ratio of the thicknesses of the sidewall insulating layer to the bottom insulating layer may be about 0.3 to 0.67.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 11/16 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
52.
SENSING IN NON-VOLATILE STORAGE USING PULLDOWN TO REGULATED SOURCE VOLTAGE TO REMOVE SYSTEM NOISE
A pull down circuit pulls a bit line voltage to a regulated source voltage in a non-volatile storage device during a sense operation such as a verify operation which occurs during programming. The storage device may include NAND strings which have associated bit lines and sense components, and a common source line. When a selected storage element of a NAND string has been programmed to its intended state, the bit line is locked out during subsequent verify operations which occur for other NAND strings which are not yet locked out. The pull down device is coupled to each bit line and to the common source line, whose voltage is regulated at a positive DC level, to prevent coupling of system power bus (Vss) noise from the locked out bit lines to the not yet locked out bit lines.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
A host connected to two or more memory cards includes an interface manager that assigns card identifiers to memory cards according to the types of memory cards present. The interface manager also assigns volume identifiers to partitions within memory cards. Applications use a pathname that includes a card identifier and a volume identifier to access a partition and files.
A non-volatile storage device is disclosed that includes a set of connected non-volatile storage elements formed on a well, a bit line contact positioned in the well, a source line contact positioned in the well, a bit line that is connected to the bit line contact, and a source line that is connected to the source line contact and the well.
A non-volatile memory can perform a first operation (such as a write, for example) on a designated group of one or more addressed pages using a first set of data stored in the corresponding set of data latches and also receive a request for a second operation (such as a read, for example) that also uses some of these corresponding data latches with a second set of data. During the first operation, when at least one latch of each set of the corresponding become available for the second operation, the memory whether there are a sufficient number of the corresponding set of data latches to perform the second operation during the first operation; if not, the second operation is delayed. The memory subsequently can perform the second operation during the first operation when a sufficient number of latches become available; and if, in response to determining whether there are a sufficient number of the corresponding set of data latches to perform the second operation it is determined that there are a sufficient number, performing the second operation during the first operation.
G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
56.
ELECTRONIC DEVICE FOR SELECTING AN APPLICATION BASED ON SENSED ORIENTATION AND METHODS FOR USE THEREWITH
An electronic device for selecting an application based on sensed orientation and methods for use therewith are provided. In one embodiment, an electronic device is provided comprising a display device, an orientation sensor, a memory storing a plurality of applications, and circuitry in communication with the display device, orientation sensor, and memory. The circuitry is operative to select one of the plurality of applications based on an orientation sensed by the orientation sensor. Other embodiments are disclosed, and each of the embodiments can be used alone or together in combination.
A personal license server and methods for use thereof are disclosed. In one embodiment, a personal license server is provided comprising a memory and circuitry operative to receive a digital rights management (DRM) license from a license server, store the DRM license in the memory, and provide the DRM license to a personal license server client, wherein the personal license server client receives the DRM license without communicating with the license server. In another embodiment, a personal license server client is provided that receives, from a license requestor, a request for a digital rights management (DRM) license from a license server; in response to the request, communicates with a personal license server instead of the license server to receive the DRM license; and provides the DRM license to the license requestor. Other embodiments are provided, and each of these embodiments can be used alone or in combination with one another.
A non-volatile storage device has first and second controllers that provide external access to non-volatile memory using different protocols. In response to a request from the first controller, the second controller retrieves parameters from the non-volatile memory and provides the retrieved parameters to the first controller. In one embodiment, the device parameters are USB descriptors, which may include a vendor ID, a product ID, a product string, and/or a serial number. The first controller may be a Universal Serial Bus (USB) card reader controller. Examples of the second controller include a Secure Digital (SD) controller, a CompactFlash (CF) controller, a MemoryStick controller, or a different type of controller that is able to provide external access to the non-volatile memory. The first controller provides the device parameters to a host during enumeration of the non-volatile storage device. The device parameters may be used to establish settings for the first controller.
G06F 13/10 - Program control for peripheral devices
G06F 12/00 - Accessing, addressing or allocating within memory systems or architectures
G06F 15/00 - Digital computers in generalData processing equipment in general
G06F 9/06 - Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
59.
SYSTEM, METHOD AND MEMORY DEVICE PROVIDING DATA SCRAMBLING COMPATIBLE WITH ON-CHIP COPY OPERATION
Data scrambling techniques implemented externally to a flash memory device are disclosed which can be used in concert with flash memory on-chip copy functionality operating internally to the flash device, thus supporting high performance copying operations. All the data stored in the flash may be scrambled, including headers and control structures. Robust file system operation may be achieved, including the capability to tolerate a power loss at any time, and yet be able to relocate data internally within the flash without having to de-scramble and then re-scramble the data. An exemplary hardware based solution has little or no impact on overall system performance, and may be implemented at very low incremental cost to increase overall system reliability. The data scrambling technique preferably uses a logical address, such as logical block address or logical page address, rather than a physical address, to determine a seed scrambling key.
An integrated circuit (IC) includes an output driver circuit portion that is electrically configurable, via a configuration input, to operate in either a first mode or a second mode corresponding to an indication of a condition of the IC, such as a supply voltage indication, the first mode and the second mode having different drive characteristics. A configuration interface circuit portion as part of the improved IC is adapted to selectively override the configuration input to configure operation of the output driver circuit portion in either the first mode or the second mode based on a drive strength control input, regardless of the condition of the IC.
Shallow trench isolation regions are positioned between NAND strings (or other types of non-volatile storage). These isolation regions include sections that form concave cut-out shapes in the substrate for the NAND string (or other types of non-volatile storage). The floating gates (or other charge storage devices) of the NAND strings hang over the sections of the isolation region that form the concave cut-out shape in the substrate. To manufacture such a structure, a two step etching process is used to form the isolation regions. In the first step, isotropic etching is used to remove substrate material in multiple directions, including removing substrate material underneath the floating gates. In the second step, anisotropic etching is used to create the lower part of the isolation region.
Systems and methods for implementing extensions to intelligently manage resources of a mass storage system are disclosed. Generally, a host sends an extension of an enabled set of extensions to a mass storage system that includes at least one of command sequence information, command information or file attribute information. The host additionally sends a host application command to the mass storage system that includes logical block address information associated with the at least one of command sequence information, command information or file attribute information of the extension. Based on the received extension, the mass storage system intelligently performs operations that efficiently manage the resources of the mass storage system to reduce the frequency of operations such as data consolidation operations, data collection operations, and data copy operations, thereby increasing the data programming and reading performance of the mass storage system.
An electronic product and method of operation are disclosed. The electronic product includes an application specific integrated circuit (ASIC) device having both a linear regulator module configured to be coupled to an optional external capacitance and a capless regulator module configured to be coupled to internal capacitance of the electronic product. Control logic of the ASIC device is responsive to a regulator selection signal for selecting one of the linear regulator module and the capless regulator module for use in powering the ASIC device. The control logic may select one of the linear regulator module or the capless regulator module for certain times of operation.
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
H02M 3/28 - Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
64.
SELF-CONFIGURABLE MULTI-REGULATOR ASIC CORE POWER DELIVERY
An electronic product has an application specific semiconductor circuit (ASIC) including in its circuitry both a linear regulator module for use with an optional external capacitance and a capless regulator module coupled to internal capacitance of the product. A method of operating the electronic product selects a low-power sub-module or high-power sub-module of the capless regulator module for use in a power-up phase of the ASIC. Control logic of the ASIC determines if an external capacitance is present. If so, then the high-power capless sub-module is used during a power-up phase of the ASIC; if not, only the low-power capless sub-module is used during the power-up phase of the ASIC. After power-up of the ASIC, the control logic may select the linear regulator module for certain times of operation and the capless regulator module for other times of operation or it may select one or the other for all times of post-power-up operation.
H02M 3/155 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
G06F 1/26 - Power supply means, e.g. regulation thereof
65.
READ, VERIFY WORD LINE REFERENCE VOLTAGE TO TRACK SOURCE LEVEL
A non-volatile memory device has individual pages of memory cells to be sensed in parallel. The memory device includes a source level tracking circuit coupled to receive a predetermined word line voltage from a word line voltage supply and the voltage level at the aggregate source node of one or more pages and coupled to provide to word lines of the memory an output voltage during the sensing operation, where the source level tracking circuit includes an op amp whereby the output voltage is the word line voltage offset by an amount to track the voltage level at the aggregate node and compensate for source bias errors due to a finite resistance in the ground loop.
A powerfully simple digital media player and methods for use therewith are disclosed. In one embodiment, a digital media player with a simplified user interface is disclosed that, like an FM radio, allows a user to easily select a category of digital media for playback. In another embodiment, to make the experience more FM-radio-like for a user, instead of charging the user for the digital audio files, digital media files can be distributed for free (or at a reduced charge) by playing advertisements before, during, or after the playback of a digital audio file. In yet another embodiment, an exemplary network infrastructure is provided. In another embodiment, a generic streaming content file interface is presented. Other embodiments are disclosed, and any of these embodiments can be used alone or in combination with one another.
Methods and systems for automatically and/or locally adjusting power- valid detection. In one class of embodiments, local power-on-reset circuits are included in individual power islands; in another class of embodiments, the power-on-reset circuit is automatically reprogrammed, depending on the detected interface voltage level, to use the same circuitry for power-valid detection in either case.
In sensing a page of nonvolatile memory cells with a corresponding group of sense modules in parallel, as each high current cell is identified, it is locked out from further sensing while others in the page continued to be sensed. The sense module involved in the locked out is then in a lockout mode and becomes inactive. A noise source from the sense module becomes significant when in the lockout mode. The noise is liable to interfere with the sensing of neighboring cells by coupling through its bit line to neighboring ones. The noise can also couple through the common source line of the page to affect the accuracy of ongoing sensing of the cells in the page. Improved sense modules and method isolate the noise from the lockout sense module from affecting the other sense modules still active in sensing memory cell in the page.
Techniques are presented for dealing with possible source line bias is an error introduced by a non-zero resistance in the ground loop of the read/write circuits of a non-volatile memory. The error is caused by a voltage drop across the resistance of the source path to the chip's ground when current flows. For this purpose, the memory device includes a source potential regulation circuit, including an active circuit element having a first input connected to a reference voltage and having a second input connected as a feedback loop that is connectable to the aggregate node from which the memory cells of a structural block have their current run to ground. A variation includes a non-linear resistive element connectable between the aggregate node and ground.
Techniques of providing a low output voltage, high current capability charge pump are given. The charge pump has multiple capacitors along with switching circuitry. In an initialization phase, the first plate of each of the capacitors is connected to receive a regulator voltage and the second plate of each capacitor is connected to ground. In a transfer phase, the capacitors are connected in series, where, for each capacitor after the first, the second plate is connected to the first plate of the preceding capacitor in the series. The output voltage of the pump is from the first plate of the last capacitor in the series. Regulation circuitry generates the regulator voltage from a reference voltage to have a value responsive to the output voltage level of the pump.
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
In an embodiment, a circuit is disclosed that includes a current mirror including a first transistor pair and a second transistor pair. The first transistor pair includes a first transistor and a second transistor. The second transistor pair includes cascode transistors. The circuit also includes an operational amplifier having an output coupled to both the first transistor and the second transistor.
A circuit including a charge pump (601) and regulation circuitry (603) is described. The output of the charge pump is connected to provide a first output signal (VTOP) that is connectable to drive a load (623). A diode (611) is connected to provide a second output signal (VBOT) of lower voltage from the first output signal. The regulation circuitry (603) is connected to the second output level (VBOT) and is connectable to the charge pump (601) to regulate its output. The circuit also includes a current source (651) connectable from the second line to ground, where control circuitry connects the current source to the second line when the first line is connected to the load.
H02M 3/07 - Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode
Techniques are presented for sending an application instruction from a hosting digital appliance to a portable medium, where the instruction is structured as one or more units whose size is a first size, or number of bytes. After flushing the contents of a cache, the instruction is written to the cache, where the cache is structured as logical blocks having a size that is a second size that is larger (in terms of number of bytes) than the first size. In writing the instruction (having a command part and, possibly, a data part), the start of the instruction is aligned with one of the logical block boundaries in the cache and the instruction is padded out with dummy data so that it fills an integral number of the cache blocks. When a response from a portable device to an instruction is received at a hosting digital appliance, the cache is similarly flushed prior to receiving the response. The response is then stored to align with a logical block boundary of the cache.
A digital content kiosk and methods for use therewith are disclosed. Various embodiments are disclosed relating to exemplary memory devices, memory architectures, and programming techniques that can be used with a digital content kiosk, exemplary mechanical and electrical components of a digital content kiosk, exemplary security aspects of a digital content kiosk, and exemplary uses of a digital content kiosk. Other embodiments are disclosed, and each of these embodiments can be used alone or in combination with one another.
Method and system for transferring encrypted content from a server to a storage device are provided. The method includes encrypting the content using a first key, wherein the server encrypts the content; establishing a secure communication channel between the server and the storage device using a random session key; sending the first key to the storage device via the secure communication channel; replacing the random session key with the first key; sending the encrypted content to the storage device after the random session key is replaced with the first key; decrypting the encrypted content using the first key, wherein the storage device decrypts the encrypted content; re-encrypting the decrypted content using a second key generated by the storage device; and storing the re-encrypted content at the storage device.
A nonvolatile memory array includes two or more devices, each device containing data that is scrambled using a different scrambling scheme. When the same data is provided and stored in both devices, different data patterns occur in each device, so that if one of the patterns causes data pattern induced errors, the original data can be recreated from another copy that does not share the same data pattern.
G11C 29/00 - Checking stores for correct operationTesting stores during standby or offline operation
G06F 11/10 - Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
G06F 11/20 - Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements
G06F 11/16 - Error detection or correction of the data by redundancy in hardware
77.
NAND STRINGS WITH OFFSET CHARGE STORAGE LAYERS AND MANUFACTURING METHOD THEREOF
A plurality of non- volatile storage elements on a common active layer are offset from neighbor non- volatile storage elements. This offsetting of non-volatile storage elements helps reduce interference from neighbor non-volatile storage elements. A method of manufacture is also described for fabricating the offset non-volatile storage elements. For example, a NAND string over active area (100) has a charge storage nitride layer (112) that is vertically offset to the charge storage layer (112) of the NAND string over active area (202).
Various programming techniques for nonvolatile memory involve programming a memory cell relative to a target threshold level. The process includes initially programming relative to a first verify level short of the target threshold level by a predetermined offset. Later, the programming is completed relative to the target verify level. For verifying with the first verify level, a virtual first verify level is effectively used where the target threshold level is used on a selected word line and a bias voltage is used on an adjacent unselected word line. Thus, the verify level in a first programming pass or programming phase is preferably virtually offset by biasing one or more adjacent word line instead of actually offsetting the standard verify level in order to avoid verifying at low levels.
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
79.
NONVOLATILE MEMORY AND METHOD FOR COMPENSATING DURING PROGRAMMING FOR PERTURBING CHARGES OF NEIGHBORING CELLS
Shifts in the apparent charge stored on a charge storing element of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent charge storing elements. To compensate for this coupling, the programming process for a given memory cell can take into account the target programmed state of one or more adjacent memory cell. The amount of programming is verified after each programming pulse and the standard verify level for the programming cell is dependent on the target state. The verify level is further offset lower dependent on the amount of perturbation from neighboring cells, determinable by their target states. The verify level is preferably virtually offset by biasing adjacent word lines instead of actually offsetting the standard verify level. For soft-programming erased cells, neighboring cells on both adjacent word lines are taken into account.
Features within an integrated-circuit memory chip enables scrambling or randomization of data stored in an array of nonvolatile memory cells. In one embodiment, randomization within each page helps to control source loading errors during sensing and floating gate to floating gate coupling among neighboring cells. Randomization from page to page helps to reduce program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. In another embodiment, randomization is implemented both within a page and between pages. The scrambling or randomization may be predetermined, or code generated pseudo randomization or user driven randomization in different embodiments. These features are accomplished within the limited resource and budget of the integrated-circuit memory chip.
G11C 7/10 - Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
A non-volatile storage system that includes less word line drivers than word lines by having a limited set of individually controllable drivers for a subset of unselected word lines requiring word line by word line control, and have the remaining word lines connected to a common source.
A system for programming non-volatile storage is proposed that reduces the impact of interference from the boosting of neighbors. Memory cells are divided into two or more groups. In one example, the memory cells are divided into odd and even memory cells; however, other groupings can also be used. Prior to a first trigger, a first group of memory cells are programmed together with a second group of memory cells. Subsequent to the first trigger and prior to a second trigger, the first group of memory cells are programmed separately from the second group of memory cells. Subsequent to the second trigger, the first group of memory cells are programmed together with the second group of memory cells. Before and after both triggers, the first group of memory cells are verified together with the second group of memory cells.
In a non- volatile memory (NVM) device having a controller and a non-volatile memory array controlled by the controller a voltage supervisor circuit monitors an output of a voltage supply powering the NVM device. The voltage supervisor circuit may be part of the NVM device or coupled to it. The voltage supervisor circuit is configured to assert a 'low-voltage' signal responsive to detecting the output of the voltage supply powering the NVM device dropping below a predetermined value. The controller is configured to write data into the memory array while the 'low-voltage' signal is deasserted and to suspend writing data while the 'low-voltage' signal is asserted. In response to assertion of the 'low-voltage' signal, the controller completes a write cycle/program operation, if pending, and prevents any additional write cycles/program operation(s) during assertion of the 'low- voltage' signal.
The variable latency associated with flash memory due to background data integrity operations is managed in order to allow the flash memory to be used in isochronous systems. A system processor is notified regularly of the nature and urgency of requests for time to ensure data integrity. Minimal interruptions of system processing are achieved and operation is ensured in the event of a power interruption.
A NAND string in which bit line-to-bit line noise is discharged prior to sensing a programming condition of a selected non-volatile storage element in the NAND string. A source voltage is applied which boosts the voltage in conductive NAND strings. The voltage boost results in capacitive coupling of noise to neighboring NAND strings. A current pull down device is used to discharge each NAND string prior to performing sensing. After each NAND string is coupled to a discharge path for a predetermined amount of time, bit lines of the NAND string are coupled to voltage sense components for sensing the programming condition of the selected non-volatile storage elements based on a potential of the bit lines. The selected non-volatile storage elements may have a negative threshold voltage. Further, a word line associated with the selected non-volatile storage elements may be set at ground.
A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die.
The erase voltage applied to a set of non-volatile storage elements being erased is structured to provide controlled shifts in the threshold voltage of the storage elements. The erase voltage is applied as a series of voltage pulses, when necessary, to shift the threshold voltage of to-be-erased memory cells below a verify level indicative of an erased condition. To avoid over-erasing the memory cells, the second erase voltage pulse is decreased, or not increased, in magnitude when compared to the previously applied voltage pulse. By decreasing or not increasing the size of the erase voltage, the amount of charge transferred from the cells by the second pulse is controlled to more accurately position an erased threshold voltage distribution for the cells near the verify level. Subsequent erase voltage pulses are increased in magnitude to provide further erasing when needed.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C 16/14 - Circuits for erasing electrically, e.g. erase voltage switching circuits
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
88.
COARSE/FINE PROGRAM VERIFICATION IN NON-VOLATILE MEMORY USING DIFFERENT REFERENCE LEVELS FOR IMPROVED SENSING
Coarse/fine programming of non-volatile memory is provided in which memory cells are programmed at a first rate of programming prior to reaching a coarse verify level for their intended state and a second rate of programming after reaching the coarse verify level but before reaching the final verify level for their intended state. Large sub-threshold swing factors associated with smaller memory cells can affect the accuracy of sense operations, particularly when sensing at a fine verify level after sensing at a coarse verify level without pre-charging the bit line between the different sensing. Different reference potentials are utilized when sensing at a coarse verify level and a final verify level. The different between the reference potentials can compensate for any discharge of the bit line during the coarse level sensing.
G11C 16/34 - Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
89.
METHOD OF STORING AND ACCESSING HEADER DATA FROM MEMORY
Methods of storing and accessing data using a header portion of a file are disclosed. In an embodiment, a method of storing content in a non-volatile memory is disclosed. The method includes reading a content file including media content and including a trailer, storing information related to the trailer together with secure data in a header portion of a file, and storing the file to a storage element of the non-volatile memory or a memory area of a host device coupled to the non-volatile memory device.
A peripheral device is disclosed having two associated memory modules, and which is configured to fit within the ExpressCard slot. One memory module communicates with a host over the PCIe bus interface of the ExpressCard slot, while the other memory module communicates with the host over the USB interface of the ExpressCard slot.
Methods and systems for a storage device are provided. One method includes interpreting a command from a host system, wherein a command parser module for a storage device interprets the command; and extracting information regarding an operation from the command, wherein the command parser module extracts the information and interfaces with the host system.
A non-volatile storage having individually controllable shield plates between storage elements. The shield plates are formed by depositing a conductive material such as doped polysilicon between storage elements and their associated word lines, and providing contacts for the shield plates. The shield plates reduce electromagnetic coupling between floating gates of the storage elements, and can be used to optimize programming, read and erase operations. In one approach, the shield plates provide a field induced conductivity between storage elements in a NAND string during a sense operation so that source/drain implants are not needed in the substrate. In some control schemes, alternating high and low voltages are applied to the shield plates. In other control schemes, a common voltage is applied to the shield plates.
In a nonvolatile memory system, first raw data is obtained from stored data using a first set of reading parameters. Subsequently, the first raw data is transferred to an ECC circuit where it is decoded. While the first raw data is being transferred and decoded, second raw data is obtained from the same stored data using a second set of reading parameters.
G11C 11/56 - Digital stores characterised by the use of particular electric or magnetic storage elementsStorage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G06F 11/10 - Adding special bits or symbols to the coded information, e.g. parity check, casting out nines or elevens
94.
PHASED GARBAGE COLLECTION AND HOUSE KEEPING OPERATIONS IN A FLASH MEMORY SYSTEM
An embodiment of a non-volatile memory storage system comprises a memory controller, and a flash memory module. The memory controller manages the storage operations of the flash memory module. The memory controller is configured to assign a priority level to one or more types of house keeping operations that may be higher than a priority level of one or more types of commands received by a host coupled to the storage system, and to service all operations required of the flash memory module according to priority.
A portable flash memory storage device such as a memory card can configure a host device upon insertion. The configuration may specify applications or other sequences of operations to be executed by the host upon insertion of the card. Files on the card may be associated with an appropriate application and then automatically opened with the appropriate application. A secure configuration may override a more freely modifiable configuration in certain embodiments.
A method for fabricating a 3-D monolithic memory device. Silicon- oxynitride (SixOyNz) on amorphous carbon is used an effective, easily removable hard mask with high selectivity to silicon, oxide, and tungsten. A silicon-oxynitride layer is etched using a photoresist layer, and the resulting etched SixOyNz layer is used to etch an amorphous carbon layer. Silicon, oxide, and/or tungsten layers are etched using the amorphous carbon layer. In one implementation, conductive rails of the 3-D monolithic memory device are formed by etching an oxide layer such as silicon dioxide (SiO2) using the patterned amorphous carbon layer as a hard mask. Memory cell diodes are formed as pillars in polysilicon between the conductive rails by etching a polysilicon layer using another patterned amorphous carbon layer as a hard mask. Additional levels of conductive rails and memory cell diodes are formed similarly to build the 3-D monolithic memory device.
H01L 21/82 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
A memory device and method for writing data of an atomic transaction is disclosed. In one embodiment, data of an atomic transaction is written to a first memory in a memory device. A determination is made regarding whether all of the data of the atomic transaction was written to the first memory. The data of the atomic transaction is read from the first memory and written to a second memory in the memory device only if it is determined that all of the data of the atomic transaction was written to the first memory.
Memory die are provided with programmable chip enable circuitry to allow particular memory die to be disabled after packaging and/or programmable chip address circuitry to allow particular memory die to be readdressed after being packaged. In a multi-chip memory package, a memory die that fails package-level testing can be disabled and isolated from the memory package by a programmable circuit that overrides the master chip enable signal received from the controller or host device. To provide a continuous address range, one or more of the non-defective memory die can be re-addressed using another programmable circuit that replaces the unique chip address provided by the pad bonding. Memory chips can also be also be readdressed after packaging independently of detecting a failed memory die.
To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have a constant pulse width and increasing magnitudes until a maximum voltage is reached. At that point, the magnitude of the programming pulses stops increasing and the programming pulses are applied in a manner to provide varying time duration of the programming signal between verification operations. In one embodiment, for example, after the pulses reach the maximum magnitude the pulse widths are increased. In another embodiment, after the pulses reach the maximum magnitude multiple program pulses are applied between verification operations.
A method and system for storage address re-mapping is disclosed. The method includes allocating logical addresses in blocks of clusters and re-mapping logical addresses into storage address space, where short runs of data dispersed in logical address space are mapped in a contiguous manner into blocks in storage address space. Valid data is flushed from blocks having both valid and obsolete data to make new blocks available for receiving data when an available number of new blocks falls below a desired threshold. The system includes a host file system, processor executable instructions residing on a host separately from the host file system or residing on a flash memory device such as an embedded solid state disk, or a backend memory manager of the flash memory device that is configured to map data from a logical address space to complete blocks in storage address space in a contiguous manner.
