Provided is a method for producing a beta-alumina sintered compact that includes: a step for preparing a bottomed cylindrical first molded body containing a raw material composition of beta-alumina; a step for placing the first molded body on a first setter placed at a predetermined location in a firing furnace and having a horizontal mounting surface, with the first molded body inverted and the open end facing downward; a step for firing the first molded body to produce a bottomed cylindrical first beta-alumina sintered compact; a step for measuring the straightness of the first beta-alumina sintered compact and identifying the bend direction; a step for preparing a bottomed cylindrical second molded body containing a raw material composition of beta-alumina; a step for placing the second molded body on a second setter placed at the same location as the first setter in the firing furnace and having a mounting surface inclined downward toward the side opposite to the bend direction, with the second molded body inverted and the open end facing downward; and a step for firing the second molded body and producing a bottomed cylindrical second beta-alumina sintered compact having better straightness than the first beta-alumina sintered compact.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances oxides
2.
METHOD FOR SUPPORTING MATERIAL CREATION, SYSTEM FOR SUPPORTING MATERIAL CREATION, AND EVALUATION APPARATUS
This method for supporting material creation has an evaluation step in which, selected from between the crystal phases and the physical properties of a ceramic material obtained after sintering a ceramic powder obtained by reactive synthesis of a plurality of ceramic raw materials, the physical properties are predicted by evaluating the physical properties of said ceramic powder.
G16C 60/00 - Computational materials science, i.e. ICT specially adapted for investigating the physical or chemical properties of materials or phenomena associated with their design, synthesis, processing, characterisation or utilisation
3.
JOINED GLASS, GLASS JOINED BODY, METHOD FOR PRODUCING GLASS JOINED BODY, AND METHOD FOR INSPECTING GLASS JOINED BODY
A thermal insulation material 3 is for use in a battery pack including a battery group in which single batteries and the thermal insulation material are stacked in an alternating manner. The thermal insulation material 3 comprises: a plate-like member 31 having through holes 31h formed by partitioning with a partition wall 31w comprising an inorganic non-metal material; and a reinforcement member for reinforcing the plate-like member 31. As a result, it is possible to provide a thermal insulation material and a method for producing the thermal insulation material that can suppress the spread of heat to an adjacent single battery when a single battery generates abnormal heat.
H01M 10/658 - Means for temperature control structurally associated with the cells by thermal insulation or shielding
H01M 10/654 - Means for temperature control structurally associated with the cells located inside the innermost case of the cells, e.g. mandrels, electrodes or electrolytes
H01M 10/655 - Solid structures for heat exchange or heat conduction
6.
SODIUM-SULFUR SECONDARY BATTERY AND METHOD FOR MANUFACTURING SODIUM-SULFUR SECONDARY BATTERY
This sodium-sulfur secondary battery is provided with: a positive electrode container in which an inner surface thereof is an anti-corrosion layer comprising an Fe-Cr alloy; a solid electrolyte tube disposed inside the positive electrode container so as to be separated from the positive electrode container; a positive electrode chamber which is surrounded by the positive electrode container and the solid electrolyte tube and in which a positive electrode current collector containing sulfur, which is a positive electrode active material, is disposed; and a negative electrode chamber which is the interior of the solid electrolyte tube separated from the positive electrode chamber by the solid electrolyte tube and in which metal sodium, which is a negative electrode active material, is disposed, wherein a high resistance layer containing glass fibers is provided integrally with the positive electrode current collector on the solid electrolyte tube side of the positive electrode current collector, the high resistance layer is in contact with the solid electrolyte tube, and a carbon sheet is interposed between the positive electrode current collector and the inner surface of the positive electrode container.
A wafer mounting stage 10 comprising: a ceramic plate 20 that has a wafer mounting surface 21 on an upper surface thereof; a gas path 52 that a gas can pass through in a vertical direction of the ceramic plate 20; a conductive base plate 30 that is joined to a lower surface of the ceramic plate 20 and used as a plasma generation electrode; a gas supply passage 34 that is provided to the inside of the base plate 30 and that communicates with the gas path 52; and a first shield member 61 that is provided surrounding the gas path 52 and that is electrically connected to the base plate 30.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A wafer mounting stand 10 comprises: a ceramic plate 20 which includes a wafer mounting surface 21 on the upper surface thereof; a gas passage 52 through which gas can pass in the vertical direction of the ceramic plate 20; a conductive base plate 30 which is joined to the lower surface of the ceramic plate 20 and is utilized as a plasma generation electrode; and a gas supply path 34 which is provided inside of the base plate 30 and communicates with the gas passage 52. The wafer mounting stand 10 also comprises an electric field adjusting conductor 60. The electric field adjusting conductor 60 is provided so as to extend, from the lower surface of the ceramic plate 20 or a position below the lower surface to an area in front of the wafer mounting surface 21 in the vertical direction in the vicinity of the gas passage 52, and is electrically connected to the base plate 30.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
9.
CREATION METHOD OF OPERATION PLAN FOR STORAGE BATTERY AND OPERATION PLAN CREATION SUPPORT DEVICE
A creation method of an operation plan for a storage battery disclosed herein includes: an output section setting step of selectively setting each of a plurality of unit time sections to one of a first unit time section, in which a charge/discharge output is made constant, or a second unit time section, in which the charge/discharge output is varied; and a variation pattern setting step for setting variation patterns of the charge/discharge outputs in the second unit time section, by setting an output ratio which is the ratio of the charge/discharge output to a reference output, for each of a plurality of pattern setting units obtained by dividing the unit time sections at predetermined time intervals. In the variation pattern setting step, a reference value for a predetermined setting index selected in advance is calculated from charge/discharge output result values for past charging/discharging operations having a common use with the second unit time sections subject to the variation pattern setting, and the output ratios for the variation patterns are set so that an index value, which is the value of the setting index for the variation patterns, satisfies a predetermined condition based on the reference value.
Provided is a composite substrate capable of accommodating a conductor pattern having a desired thickness between an inorganic material substrate and a support substrate, and of stably bonding the inorganic material substrate and the support substrate. A composite substrate according to one embodiment of the present invention comprises an inorganic material substrate, a conductor pattern, a dielectric film, and a support substrate. The inorganic material substrate has a substrate surface. A recess is provided on the substrate surface. The substrate surface includes a first portion positioned outside the recess and a second portion that is an inner surface of the recess. The conductor pattern is embedded in the recess. A step is formed between the conductor pattern and the first portion of the substrate surface. The dielectric film is provided on the substrate surface so as to cover the step. The support substrate is positioned on the opposite side of the dielectric film from the inorganic material substrate. The support substrate is bonded to the dielectric film.
Provided is a composite substrate capable of accommodating a conductor pattern having a desired thickness between an inorganic material substrate and a support substrate, and of improving heat dissipation and bonding reliability. A composite substrate according to one embodiment of the present invention comprises an inorganic material substrate, a conductor pattern, a dielectric film, and a support substrate. The inorganic material substrate has a substrate surface. A recess is provided on the substrate surface. The conductor pattern is embedded in the recess. The conductor pattern exposes at least a part of the substrate surface. The dielectric film is provided so as to cover the conductor pattern and the substrate surface exposed from the conductor pattern. The support substrate is positioned on the side opposite to the inorganic material substrate with respect to the dielectric film. The dielectric film and the support substrate are directly bonded to each other.
To provide a processing system with which it is possible to surpress the occurrence of gaps when pulling a workpiece onto a support and position the workpiece with good accuracy. A processing system for cutting and milling a bottomed cylindrical ceramic workpiece having an opening at one end includes: a first support disposed so as to be engageable with the inner peripheral surface of the open end of the workpiece, the first support being for supporting the workpiece from the open end side so that the workpiece can rotate around an axis; a second support disposed so as to be engageable with the bottom of the workpiece, the second support being for supporting the workpiece from the bottom side so that the workpiece can rotate around the axis; a third support capable of moving the workpiece to the second support side while gripping the outer peripheral surface of the workpiece, the third support being for engaging the workpiece with the second support; a motor for rotating the first support; and a processing unit for cutting and milling the workpiece while supplying cooling water to the workpiece.
B28D 7/04 - Accessories specially adapted for use with machines or devices of the other groups of this subclass for supporting or holding work
B24B 9/00 - Machines or devices designed for grinding edges or bevels on work or for removing burrsAccessories therefor
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
In the present invention, a ceramic heater, which is a member for a semiconductor manufacturing apparatus, comprises: a ceramic plate 20; a thermocouple passage 40; and a thermal spray coating 43. The thermocouple passage 40 includes: a passage hole 41, which is bored from an outer peripheral surface 20c of the ceramic plate 20 towards a thermocouple insertion port 40a provided on the centre lower surface-side of the ceramic plate 20; and an insertion member 42, which is inserted into the passage hole 41 from an opening 41a, of the passage hole 41, opening to the outer peripheral surface 20c of the ceramic plate 20. The thermal spray coating 43 closes a gap between the insertion member 42 and the passage hole 41.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is a heater for a semiconductor manufacturing apparatus capable of improving the volume resistivity of a ceramic substrate and being stably manufactured. A heater for a semiconductor manufacturing apparatus according to an embodiment of the present invention comprises a ceramic substrate and a heating element. The ceramic substrate contains aluminum nitride. The heating element is embedded in the ceramic substrate. The ceramic substrate contains two or more kinds of rare earth elements and contains Yb as a rare earth element. The total content ratio of the rare earth elements in the ceramic substrate is 4.5 mass % or less in terms of oxide. The content ratio of Yb in the ceramic substrate is 0.3 mass % or more and 1.3 mass % or less in terms of oxide.
C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
H05B 3/10 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
Provided is a ceramic susceptor capable of improving volume resistivity at high temperatures. The ceramic susceptor according to an embodiment of the present invention has a substrate mounting plate. The substrate mounting plate includes aluminum nitride and spinel. The aluminum nitride content in the substrate mounting plate is 95.0 mass% to 99.9 mass%. The spinel content in the substrate mounting plate is 0.1 mass% to 1.0 mass% in terms of oxides. The aluminum nitride has a polycrystalline structure. The spinel is located at the grain boundary between crystal grains of the aluminum nitride. The lattice constant of the spinel is 8.040 Å to 8.110 Å.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is a composite substrate from which it is possible to obtain, at a high yield, a semiconductor element having excellent performance. This composite substrate comprises a support substrate, a group III element nitride film, and a device layer formed of a group III element nitride in the stated order. The average value of sheet resistances in the surface of the device layer is 400 Ω/□ or less, and the variation of the sheet resistances in the surface of the device layer is 20% or less.
H01L 29/80 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
To provide a ceramic substrate and a composite substrate capable of suppressing grain pull-out. A ceramic substrate according to an embodiment of the present invention contains an aluminum nitride sintered body. The aluminum nitride sintered body has a plurality of first pores. On the surface of the ceramic substrate, the maximum length of each of the plurality of first pores is less than 0.5 μm.
C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
C04B 38/00 - Porous mortars, concrete, artificial stone or ceramic warePreparation thereof
An operation plan creation system disclosed herein includes: a storage unit for storing feature amount data on each of a plurality of products manufactured in the past, the feature amount data including data on the power consumption when manufacturing each of the plurality of products; a reception unit for receiving requests for creating an operation plan; an extraction unit for extracting data on a product to be manufactured from a production plan including data on the product when a request for creating an operation plan is received by the reception unit; a first determination unit for determining whether the product extracted by the extraction unit matches one of the plurality of products stored in the storage unit; a second determination unit for determining whether a corresponding physical model can be generated using the product as the specific product when it is determined that the product does not match; a machine learning model generation unit that, when it is determined that a corresponding physical model cannot be generated, generates a machine learning model corresponding to the specific product using at least a portion of the feature amount data on the plurality of products stored in the storage unit; a power consumption prediction unit that predicts the power consumption of the specific product using the machine learning model of the specific product generated by the machine learning model generation unit; an operation plan creation unit that uses data on the power consumption of the specific product, predicted by the power consumption prediction unit, to create an operation plan so that power is within a desired power range in a predetermined period; and an output unit that outputs the operation plan created by the operation plan creation unit.
G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
This energy management system is provided with at least one of a power generation facility and a power storage facility. An operation plan creation system of the energy management system comprises: a storage unit that stores feature amount data of each of a plurality of products that have been manufactured in the past; an extraction unit that extracts data of a product from a production plan; a first determination unit that determines whether or not the extracted product matches one of the plurality of products; a second determination unit that, if it is determined that the extracted product does not match any of the plurality of products, determines that the product is a specific product and determines whether or not a physical model corresponding to the specific product can be generated; a machine learning model generation unit that, if it is determined that such a physical model cannot be generated, generates a machine learning model corresponding to the specific product using at least a part of the feature amount data of the plurality of products; a power consumption prediction unit that predicts the power consumption of the specific product using the machine learning model for the specific product; and an operation plan creation unit that uses data of the predicted power consumption of the specific product to create an operation plan to maintain, in a prescribed period, the power consumption of the specific product within a desired power range.
G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
H01L 21/36 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
21.
METHOD FOR MANUFACTURING SULFUR MOLD AND METHOD FOR MANUFACTURING SODIUM-SULFUR BATTERY
The purpose of the present invention is to provide a method for manufacturing a sulfur mold with which it is possible to reduce the necessity of disposing an adjustment object in a mold cavity in order to adjust the size of a space in the mold cavity, and improve manufacturing efficiency. A method for manufacturing a sulfur mold according to the present invention is a method for manufacturing a sulfur mold 1002 having a predetermined shape in which a conductive material is impregnated with sulfur, which is an anode active material of a sodium-sulfur battery, and includes a step for injecting a molten sulfur 30 into a mold cavity 20 from an injector 3 connected to a mold 2 after disposing a conductive material 21 in the mold cavity 20 in the mold 2. The injection of the molten sulfur 30 by the injector 3 is performed at an injection time determined on the basis of the weight of the conductive material 21 measured before the injection of the molten sulfur 30, and at a constant injection pressure.
The present invention provides a sulfur molding production method which makes it possible to more reliably supply molten sulfur to an injector. The present invention provides a sulfur molding 1002 production method for producing a sulfur molding 1002 which has a prescribed shape and in which sulfur that is a positive electrode active material for a sodium-sulfur battery 1000 is impregnated in a conductive material 21, said production method comprising a step for, after disposing a conductive material 21 in a mold cavity 20 inside a mold 2, injecting molten sulfur 30 inside the mold cavity 20 from an injector 3 which is connected to the mold 2, wherein: the molten sulfur 30 flows through circulation piping 41 which has one end 41a and another end 41b that are connected to a melting furnace 40 that heats sulfur to generate the molten sulfur 30; and the injector 3 injects the molten sulfur 30 flowing through the circulation piping 41 into the mold cavity 20.
Provided is a method for manufacturing a sulfur mold, whereby it is possible to more reliably confirm that an inert gas-generating substance is suitably retained in the sulfur mold, and to more reliably and suitably manage the magnitude of the pressure in an anode space and a cathode space of a sodium-sulfur battery. The method for manufacturing a sulfur mold according to the present invention is for manufacturing a sulfur mold 1002 having a prescribed shape and obtained by impregnating a conductive material with sulfur which is an anode active material of a sodium-sulfur battery, the manufacturing method comprising: a step for arranging a conductive material together with an inert gas-generating substance 1012 in a mold cavity inside a mold, and then injecting molten sulfur into the mold cavity from an injector connected to the mold; and a step for imaging the sulfur mold 1002 after the injection of the molten sulfur into the mold cavity and detecting the inert gas-generating substance 1012 on the sulfur mold 1002 through image analysis.
2323 232323233-based solid solution. A surface of the alignment layer is on the side used for crystal growth and is constituted of a material having a corundum crystal structure having a larger a-axis length and/or c-axis length than sapphire. The alignment layer has a composition stable region in which the composition is stable in the thickness direction and an inclined composition region in which the composition changes in the thickness direction. The composition stable region is thicker than the inclined composition region.
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
C04B 35/12 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on chromium oxide
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
A method for producing an acetal compound is provided with which the acetal compound can be produced in excellent yield with limited use of a catalyst. The method for producing an acetal compound according to one embodiment of the present invention comprises irradiating a reaction fluid comprising a carbonyl-group-containing compound and an alcohol compound with infrared light having a wavelength that the carbonyl-group-containing compound absorbs the infrared light, thereby reacting the carbonyl-group-containing compound with the alcohol compound.
The present invention provides an electron beam welding device comprising: a chamber for accommodating a pair of workpieces butted against each other and keeping the workpieces in a vacuum atmosphere; an electron beam radiation device for radiating an electron beam toward a groove portion of the workpieces accommodated inside the chamber; a holding device for pressing the workpieces upward from below the workpieces and holding the workpieces in a manner allowing rotation in the circumferential direction; and a cooling jig for cooling the workpieces while pressing the workpieces downward from above the workpieces and holding the workpieces in a manner allowing rotation in the circumferential direction, wherein the cooling jig comprises, inside a metal body portion, a cooling channel for circulating cooling water for cooling the workpieces, and is formed such that the ratio (S/V) of the channel surface area S (units: cm2) of the cooling channel to the volume V (units: cm3) of the body portion is between 100% and 170%.
Provided are an electron beam welding device and a sodium-sulfur battery manufacturing method that make it possible to improve cooling efficiency of a workpiece and reduce the thermal effect of electron beam welding on the workpiece. The electron beam welding device comprises: a chamber for accommodating a pair of workpieces in abutment with each other to hold the pair of workpieces in a vacuum atmosphere; an electron beam emission device for emitting an electron beam toward groove portions of the workpieces accommodated in the chamber; and a holding device for pressing the workpieces upward from below the workpieces and rotatably holding the workpieces in the circumferential direction; and a cooling jig for pressing the workpieces downward from above the workpieces and cooling the workpieces while rotatably holding the workpieces in the circumferential direction. The cooling jig comprises, in a metal body part thereof, a cooling flow path through which cooling water for cooling the workpieces circulates. The proportion of a flow path surface area S (unit: cm2) of the cooling flow path to a volume V (unit: cm3) of the body part (S/V) is 100-170%.
This method for regenerating a zeolite membrane comprises: a step (step S31) for preparing a zeolite membrane having reduced permeation performance; and a step (step S32) for bringing a hydrogen-gas-containing regeneration gas into contact with the zeolite membrane, thereby restoring the permeation performance of the zeolite membrane. Thus, the permeation performance of the zeolite membrane can be suitably restored.
The present invention provides a methane production reactor which is capable of remarkably improving the methane conversion rate and efficiently producing methane. A methane production reactor according to one embodiment of the present invention comprises a ceramic base material and a methanation reaction catalyst. The ceramic base material defines a gas flow path. The gas flow path is supplied with a starting material gas that contains carbon oxide and hydrogen. The methanation reaction catalyst can promote a reaction for producing methane. The methanation reaction catalyst is disposed so as to be able to come into contact with the starting material gas supplied to the gas flow path. The thermal conductivity of the ceramic base material is 5 W/m∙K or more. The mass of the methanation reaction catalyst per unit volume of the gas flow path is 50 g/L or more.
C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen
B01J 23/83 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups with rare earths or actinides
Provided is a honeycomb structure equipped with a coating, the honeycomb structure having applied thereto a coating that can contribute to suppression of falling-off of a functional-material-containing layer. This honeycomb structure equipped with a coating comprises: an outer peripheral wall; a partition wall disposed on the inner-peripheral side of the outer peripheral wall, the partition wall partitioning and forming a plurality of cells that form a flow path extending from a first end surface to a second end surface; a functional-material-containing layer covering the partition wall; a first coating that covers a partition wall portion constituting the first end surface and an in-cell partition wall portion near the first end surface, said portions being part of the partition wall, and penetrates into said partition wall portions; and a second coating that covers a partition wall portion constituting the second end surface and an in-cell partition wall portion near the second end surface, said portions being part of the partition wall, and penetrates into said partition wall portions.
A system according to a first embodiment: stores, in a storage medium, data representing a first operation condition of a substrate processing apparatus provided with a substrate support before reproduction; and performs a process for determining a second operation condition of the substrate processing apparatus provided with the substrate support after reproduction, with the first operation condition represented by the data stored in the storage medium as a starting point. A system according to a second embodiment: stores, in a storage medium, log data including measurement values of each of one or more sensors provided to a substrate support; performs analysis for identifying the cause of a failure occurring in operation of the substrate processing apparatus, or performs analysis for predicting a failure that could occur within a given period in operation of the substrate processing apparatus, by using the log data; and outputs analysis result data representing a result of the analysis.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
32.
CARBON FILM COMPOSITE AND PRODUCTION METHOD FOR CARBON FILM COMPOSITE
avesdsd of the thickness of the composite layer (13) is 0.1–1.0 μm. In other words, the thickness and the variation in the thickness of the composite layer (13) are reduced, and the carbon film composite can thereby increase permeation flux.
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
Provided is a reactor used for a process involving two or more elementary reactions, namely an exothermic reaction and an endothermic reaction, the reactor having excellent reaction efficiency and reduced catalyst degradation. A reactor according to an embodiment of the present invention is used in a process involving two or more elementary reactions, namely an exothermic reaction and an endothermic reaction. The reactor comprises: a gas channel into which a feedstock gas containing a first component and a second component is supplied; and a catalyst-containing part disposed so as to be capable of contacting the feedstock gas supplied to the gas channel. The catalyst-containing part includes an endothermic reaction promoting catalyst capable of promoting an endothermic reaction related to the first component and an exothermic reaction promoting catalyst capable of promoting an exothermic reaction between the reaction product of the first component and the second component. The dispersion ratio of the exothermic reaction promoting catalyst calculated in a cross-sectional analysis of the catalyst-containing part is 0.60 or more.
B01J 23/63 - Platinum group metals with rare earths or actinides
B01J 23/83 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups with rare earths or actinides
B01J 23/89 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with noble metals
B01J 35/50 - Catalysts, in general, characterised by their form or physical properties characterised by their shape or configuration
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A member 10 for a semiconductor manufacturing device comprises: a first ceramic plate 21 that has a wafer mounting surface 26 on an upper surface; a second ceramic plate 22 that is disposed on a lower surface of the first ceramic plate 21; and a first amorphous layer 24 that is present between the first ceramic plate 21 and the second ceramic plate 22. The first ceramic plate 21 has low particle shedding as compared to the second ceramic plate 22.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
This member 10 for a semiconductor manufacturing device comprises: a first ceramic plate 21 having a wafer-mounting surface 26 on the upper surface thereof; a second ceramic plate 22 disposed on the lower surface of the first ceramic plate 21; and a first amorphous layer 24 present between the first ceramic plate 21 and the second ceramic plate 22. The corrosion resistance of the first ceramic plate 21 is higher than the corrosion resistance of alumina and the second ceramic plate 22.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
The present invention is for stably manufacturing a joined body that constitutes a part of a battery using Na for a positive electrode and/or a negative electrode and that has excellent durability and corrosion resistance. Provided is a manufacturing method for a joined body, the method including solid-phase bonding of a ceramic component for insulating between the positive electrode and the negative electrode of the battery and a metal component on the positive-electrode side or the negative-electrode side via an Al-Si alloy-based brazing material. The solid-phase bonding includes: a step for heating, without pressurizing, a laminated part that includes the ceramic component, the Al-Si alloy-based brazing material, and a joined part of the metal component in this order, under a predetermined high vacuum atmosphere, such that the temperature of the Al-Si alloy-based brazing material rises to a prescribed holding temperature range; a step for applying a high pressure to the laminated part for a prescribed time in the lamination direction while keeping the temperature of the Al-Si alloy-based brazing material in the holding temperature range; and a step for cooling the laminated part such that the temperature of the Al-Si alloy-based brazing material falls within a prescribed time from the holding temperature range to the room temperature after the pressurization to the laminated part is stopped.
A synthetic fuel generation system 1 according to the present invention comprises: a solid oxide electrolysis cell 10 to which raw material gas 2 and raw material steam 3 are supplied; a post reactor 11 that generates a synthetic fuel 4 from generated gas 10a from the solid oxide electrolysis cell 10; and a first condenser 12 that condenses the generated gas 10a from the solid oxide electrolysis cell 10 by exchanging heat with the raw material gas 2 and the raw material steam 3 supplied to the solid oxide electrolysis cell 10.
This separation method for separating a mixed gas comprises: a step (step S11) for supplying, to a separation membrane which is an inorganic film, a mixed gas containing a first gas, a second gas, water vapor, and a third gas which is a polar gas having a lower polarity than the water vapor; and a step (step S12) for separating the first gas from the mixed gas by causing the mixed gas to permeate the separation membrane. Due to this technique, deterioration of permeation performance due to adsorption of water vapor to the separation membrane can be suppressed.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A gas separation device (3) comprises a gas supply part (36), a first separation membrane (310), and a second separation membrane (320). The gas supply part (36) supplies a mixed gas. In the first separation membrane (310), the permeability of a third gas is higher than the permeability of a first gas and a second gas. The first separation membrane (310) causes the third gas, from the mixed gas supplied from the gas supply part (36), to permeate therethrough and removes the third gas. In the second separation membrane (320), the permeability of the first gas is higher than the permeability of the second gas. The second separation membrane (320) is supplied with a first non-permeated gas, from the mixed gas, that has not permeated through the first separation membrane (310). The second separation membrane (320) cause the first gas, from the first non-permeated gas, to permeate therethrough and separates the first gas. As a result, it is possible to suppress increases in the size of facilities related to the separation of a mixed gas.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
This carbon film composite is provided with: a porous support (11); and a carbon film (12) provided on a surface of the support (11). A carbon-rich layer (35) having a larger amount of carbon than the surrounding portions is provided inside the support (11). The carbon-rich layer (35) is disposed at a position separated from the surface of the support (11). As a result, a decrease in the permeation flux of the carbon film composite (1) can be limited while the separation coefficient thereof can be improved.
Disclosed is a solid electrolyte which can be provided at an inexpensive process cost and exhibits high ion conductivity. The solid electrolyte contains: at least one inorganic compound that is selected from the group consisting of a metal oxide, a metal halogen compound, and a metal hydroxide; a residual solvent; and a salt that contains an alkali metal or an alkaline earth metal. The inorganic compound has at least one peak that has a full width at half maximum of 0.80° or less in the X-ray diffraction pattern.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
Provided is a methane production method capable of stably and efficiently producing methane. A methane production method according to one embodiment of the present invention comprises: a step for preparing a raw material gas by adding hydrogen gas to a gas mixture containing carbon dioxide gas and oxygen gas; and a step for supplying the raw material gas to a gas flow path included in a methane production device. In the step for adding hydrogen gas to the gas mixture, the addition amount A of the hydrogen gas satisfies formula (1). (1): A = {z × (c1/100) × x} + {z × (c2/100) × y} (In formula (1), A represents the addition amount of hydrogen gas. z represents the flow rate of the gas mixture. c1 represents the concentration of oxygen in the gas mixture. c2 represents the concentration of carbon dioxide in the gas mixture. x represents 2.0. y represents a numerical value of 4.0 or more.)
C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen
Provided is a methane production method capable of efficiently producing methane and excellent in safety. The methane production method according to one embodiment produces methane from a raw material gas containing carbon dioxide gas, oxygen gas, and hydrogen gas. The methane production method comprises: a step of preparing the raw material gas by adding hydrogen gas to a mixed gas containing carbon dioxide gas and oxygen gas; and a step of supplying the raw material gas to a gas flow path of a methane production apparatus. In the methane production method, when the oxygen concentration is 5 vol. % or more and the temperature in the gas flow path exceeds 450°C in the raw material gas to be supplied to the gas flow path, the addition of the hydrogen gas to the mixed gas is stopped.
C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen
Provided is a methane production reactor which can significantly improve the methane conversion rate and efficiently produce methane. A methane production reactor according to one embodiment of the present invention comprises a ceramic base material and a methanation reaction catalyst. The ceramic base material defines a gas flow path. A raw material gas containing carbon oxide and hydrogen is supplied to the gas flow path. The methanation reaction catalyst can facilitate a reaction for generating methane. The methanation reaction catalyst is disposed so as to be able to contact the raw material gas supplied to the gas flow path. The thermal conductivity of the ceramic base material is 8 W/m·K or more.
C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen
B01J 23/83 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups with rare earths or actinides
Provided is a methane production reactor that exhibits excellent methane yield. A methane production reactor according to an embodiment of the present invention has gas flow paths to which a raw material gas containing ammonia and carbon dioxide is supplied. The methane production reactor comprises: a honeycomb-shaped base material including partition walls that define a plurality of cells, at least some of the plurality of cells including the gas flow paths; and catalyst-containing layers provided on the surfaces of the partition walls so as to face the gas flow paths, the catalyst-containing layers being capable of promoting a reaction for generating methane from the raw material gas.
C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen
B01J 23/63 - Platinum group metals with rare earths or actinides
B01J 23/83 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups with rare earths or actinides
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A semiconductor manufacturing device member 10 includes: a first ceramic plate 21 having a wafer mounting surface 26 on the upper surface thereof; a second ceramic plate 22 arranged on the lower surface of the first ceramic plate 21; an attraction electrode 26 built in the second ceramic plate 22; and a first amorphous layer 24 present between the first ceramic plate 21 and the second ceramic plate 22. The insulation breakdown voltage of the first ceramic plate 21 is higher than the insulation breakdown voltage of the second ceramic plate 22 and is 70 kV/mm or more.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Provided is a method for producing an acetal compound, with which an acetal compound can be produced at an excellent yield while suppressing use of a catalyst. In a method for producing an acetal compound according to one embodiment of the present invention, a reaction liquid containing a carbonyl group-containing compound and an alcohol compound is irradiated with infrared radiation having an absorption wavelength of the carbonyl group-containing compound, thereby causing the carbonyl group-containing compound to react with the alcohol compound.
Provided is a fuel production device that can improve the conversion rate of carbon oxide and efficiently produce a synthetic fuel. The fuel production device according to an embodiment of the present invention has a first flow path. A raw material gas containing carbon oxide and hydrogen is supplied to the first flow path. The fuel production device comprises a first catalyst layer and a second catalyst layer. The first catalyst layer is disposed facing the first flow path. The first catalyst layer includes a first catalyst capable of promoting a Fischer-Tropsch reaction. The second catalyst layer is positioned on the opposite side of the first catalyst layer to the first flow path. The second catalyst layer includes a second catalyst capable of promoting the hydrocracking reaction and/or isomerization reaction of hydrocarbon compounds produced by the Fischer-Tropsch reaction.
C10G 45/58 - Refining of hydrocarbon oils using hydrogen or hydrogen-generating compounds to change the structural skeleton of some of the hydrocarbon content without cracking the other hydrocarbons present, e.g. lowering pour pointSelective hydrocracking of normal paraffins
C10G 47/00 - Cracking of hydrocarbon oils, in the presence of hydrogen or hydrogen-generating compounds, to obtain lower boiling fractions
Provided is a fuel production device capable of efficiently producing a synthetic fuel with excellent selectivity for carbon numbers of 5 to 20. A fuel production device according to one embodiment of the present invention includes a ceramic base material and a catalyst layer. The ceramic base material defines a gas flow path. A raw material gas containing carbon oxide and hydrogen is supplied to the gas flow path. The catalyst layer is provided on a surface of the ceramic base material so as to face the gas flow path. The catalyst layer includes a first catalyst and a second catalyst. The first catalyst is capable of promoting the Fischer-Tropsch reaction. The second catalyst is capable of promoting the hydrocracking reaction and/or isomerization reaction of a hydrocarbon compound gas produced by the Fischer-Tropsch reaction.
C10G 45/58 - Refining of hydrocarbon oils using hydrogen or hydrogen-generating compounds to change the structural skeleton of some of the hydrocarbon content without cracking the other hydrocarbons present, e.g. lowering pour pointSelective hydrocracking of normal paraffins
C10G 47/00 - Cracking of hydrocarbon oils, in the presence of hydrogen or hydrogen-generating compounds, to obtain lower boiling fractions
54.
SEMICONDUCTOR MANUFACTURING DEVICE-USE MEMBER AND METHOD FOR MANUFACTURING SAME
Provided is a method for manufacturing a second semiconductor manufacturing device-use member using a first semiconductor manufacturing device-use member as a raw material. The method is for manufacturing a second semiconductor manufacturing device-use member by using a first semiconductor manufacturing device-use member provided with a first ceramic substrate that has an upper surface with a plurality of protrusions on which a wafer can be placed and that has a built-in electrode, said second semiconductor manufacturing device-use member being provided with a second ceramic substrate that has an upper surface with a plurality of protrusions on which a wafer can be placed and that has a built-in electrode. Said method comprises: a step A in which the upper surface of the first ceramic substrate is processed to form a flat surface from which the plurality of protrusions are removed; a step B1 in which the flat surface of the first ceramic substrate and a lower surface of a ceramic plate are bonded at room temperature to form a second ceramic substrate in which the first ceramic substrate and the ceramic plate are bonded; and a step C in which, before or after the execution of the step B1, a plurality of protrusions on which a wafer can be placed are formed on the upper surface of the ceramic plate.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C04B 37/00 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating
The present invention addresses the problem of providing a semiconductor manufacturing device member capable of obtaining high electrostatic adsorption force. Provided is a semiconductor manufacturing device member which is provided with: a first ceramic part that has an upper surface including a wafer mounting surface and that has a lower surface located on the opposite side thereof from the upper surface; a second ceramic part that is joined to the lower surface of the first ceramic part; a first amorphous layer that is present at the joining interface between the first ceramic part and the second ceramic part; and an electrostatic adsorption electrode that is disposed on the first ceramic part, on the second ceramic part, or between the first ceramic part and the second ceramic part, wherein the first ceramic part has a higher relative permittivity than the second ceramic part.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C04B 37/00 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Provided is a device for determining the feasibility of operation, based on an operation plan, of a storage battery, the device comprising: a simulation unit for simulating at least one of the state of charge, temperature, and charging/discharging current of the storage battery when a charging/discharging operation is performed in the storage battery according to the contents of the operation plan; a determination unit for determining the feasibility of operation of the storage battery according to the operation plan, using, as determination target indexes, a result of the simulation and a setting value of a charging/discharging output for each unit time segment described in the operation plan; and a modification unit capable of modifying the operation plan when it is determined that the operation is not feasible. When at least one of the determination target indexes does not fall within an allowable range, it is determined that the operation is infeasible, and the operation plan can be modified by adjusting the setting value of the charge/discharge output for each unit time segment in the operation plan determined to be infeasible. When the operation plan is modified, the operation feasibility is determined for the modified operation plan.
Provided is a halide-based solid electrolyte which exhibits high lithium ion conductivity at room temperature. This solid electrolyte contains Li, Mα, Mβ, and Cl, wherein Mαis at least one element that is selected from the group consisting of Zn, Mg, Ca, Sr, and Ba, and Mβ is at least one element that is selected from the group consisting of Al, Ga, Bi, Er, Ge, and Zr. This solid electrolyte has a crystal structure that belongs to an orthorhombic crystal of the space group Pnma.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
Provided is an electrode-embedded ceramic structure comprising: a ceramic shaft having an electrode provided on an outer peripheral section thereof; and a ceramic cylinder that houses the ceramic shaft and that is joined with the ceramic shaft. In the electrode-embedded ceramic structure, the relative density of a first ceramic constituting the ceramic shaft and the relative density of a second ceramic constituting the ceramic cylinder are different.
C04B 35/10 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminium oxide
H05B 3/18 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
H05B 3/48 - Heating elements having the shape of rods or tubes non-flexible heating conductor embedded in insulating material
According to the present invention, an electrolysis cell (1) is provided with a hydrogen electrode layer (5), an electrolyte layer (6), an intermediate layer (7), and a reaction prevention layer (8). The electrolyte layer (6) is composed of YSZ. The reaction prevention layer (8) is composed of GDC. The intermediate layer (7) has a first intermediate layer (71) that is formed on the electrolyte layer (6), and a second intermediate layer (72) that is sandwiched between the first intermediate layer (71) and the reaction prevention layer (8). Each of the first intermediate layer (71) and the second intermediate layer (72) is composed of YSZ and GDC. In the first intermediate layer (71), the Zr content is higher than the cerium content. In the second intermediate layer (72), the Zr content is equal to or less than the Ce content. When the Gd content is subjected to line analysis along the thickness direction of the intermediate layer (7), the position at which the highest Gd content is acquired is present in the first intermediate layer (71).
Disclosed is a solid electrolyte that exhibits high ion conductivity and that can be provided at an inexpensive process cost. The solid electrolyte comprises: at least one inorganic compound selected from the group consisting of metal oxides, metal hydrogen compounds, and metal hydroxides; residual solvent; and a salt containing an alkali metal or an alkaline earth metal. The x-ray diffraction pattern of the inorganic compound has at least one peak having a full width at half maximum of no greater than 0.80°.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
A composite substrate according to the present invention comprises: a functional substrate that is configured to include at least one of InP and a crystal of a material which can be formed on an InP crystal by epitaxial growth; and a support substrate that comprises a semiconductor material and is bonded to the functional substrate to support the functional substrate. The functional substrate has: a first layer; and a second layer that is disposed on the side closer to the support substrate than the first layer and comprises an amorphous body containing a rare gas element. The support substrate has: a first support layer; a second support layer that is disposed on the side closer to the functional substrate than the first support layer and comprises an amorphous body of a semiconductor material containing a rare gas element; and a bonding layer that is in contact with the functional substrate and comprises an amorphous body of a semiconductor material.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
63.
GROUP III NITRIDE SUBSTRATE, BONDED SUBSTRATE, SEMICONDUCTOR ELEMENT, AND METHOD FOR PRODUCING GROUP III NITRIDE SUBSTRATE
C23C 16/448 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
C30B 9/00 - Single-crystal growth from melt solutions using molten solvents
H01L 21/20 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/208 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using liquid deposition
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
A wafer mounting table 10 includes: a ceramic plate 20 having a plug 50 through which gas can pass in the vertical direction; a conductive plate 30 having a built-in gas introduction passage 34; and a resin layer 40 for joining both. A resin layer through-hole 42 is provided at a position facing the plug 50 in the resin layer 40, and is larger than the plug 50 in a plan view. The gas introduction passage 34 communicates with the plug 50 through the resin layer through-hole 42. A conductive film 60 is provided at a position facing the resin layer through-hole 42 on the lower surface of the ceramic plate 20, is larger than the resin layer through-hole 42 in a plan view, and allows gas flow from the gas introduction passage 34 to the plug 50. A contact member 70 is provided in the gas introduction passage 34, electrically connects the conductive film 60 and the conductive plate 30, and allows gas flow from the gas introduction passage 34 to the plug 50.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
An electrolytic cell (1) is provided with: a metal support (10) having a plurality of communication holes (11) formed on a first main surface (12) thereof; and a cell body (20). The cell body (20) has a gas diffusion layer (5) disposed on the first main surface (12) of the metal support (10), and a hydrogen electrode layer (6) disposed on the gas diffusion layer (5). The gas diffusion layer (5) has a body section (5a) sandwiched in a gap between the metal support (10) and the hydrogen electrode layer (6), and a projecting part (5b) projecting from the body section (5a) into a communication hole (11). The projecting part (5b) covers part of the inner peripheral surface (14) of the communication hole (11).
This interconnector comprises a body part and a plurality of oxide layers. The body part has a first main surface, a second main surface, and a plurality of protrusions. The second main surface faces the opposite side from the first main surface. Each protrusion is formed on the first main surface. The oxide layers are disposed on side surfaces of the protrusions. At least one oxide layer has a thickness distribution which induces warpage such that the body part swells towards the second main surface side.
Provided is a bonded substrate with which semiconductor devices can be obtained at high yield. The bonded substrate is obtained by bonding a group III nitride crystal substrate and a support substrate. The angle between a m-plane of the group III nitride crystal substrate and a first crystal plane of the support substrate is 15° or less in a plan view.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
A wafer table 10 comprises: a ceramic plate 20 having a wafer-bearing surface 21 on an upper surface 20a; an RF electrode 22 embedded in the ceramic plate 20; a thermocouple insertion hole 24 provided in a section that extends from a lower surface of the ceramic plate 20 to just short of the RF electrode 22; and a dummy electrode 25 connected to ground G and provided in the portion of the ceramic plate 20 between the RF electrode 22 and a bottom surface 24a of the thermocouple insertion hole 24 to achieve electrical isolation from the RF electrode 22.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
69.
SEPARATION MEMBRANE COMPOSITE AND METHOD FOR PRODUCING SEPARATION MEMBRANE COMPOSITE
This separation membrane composite (1) comprises: a porous support body (11); a seal part (16) that covers a prescribed seal area (A1) on a target surface of the support body (11); and a separation membrane (12) that covers the non-seal area (A2) that is not covered by the seal part (16) on the target surface, and also covers the seal part (16) in the vicinity of the boundary (P) between the non-seal area (A2) and the seal area (A1). In a region of interest (R1) in a range of 10 mm from the edge (121) of the separation membrane (12) positioned on the seal part (16) toward the non-seal-area (A2) side, the separation membrane (12) has a non-penetrating crack (C1) that opens to the surface on the side opposite from the support body (11) and does not reach the support body (11). In a 50-μm-square region within the region of interest (R1), the total crack length of the non-penetrating crack (C1) is 50-1000 μm.
23222322 domains (93) is 5% or more. As a result, it is possible to increase the strength of the alumina porous body (1) having a desired porosity and average pore diameter.
The present invention provides a negative electrode plate including a negative electrode active material and a nonionic water-absorbing polymer, and comprising a nonionic water-absorbing polymer layer formed from the nonionic water-absorbing polymer on a surface of at least one of a pair of main surfaces. The present invention also provides a zinc secondary battery including a positive electrode, a negative electrode including the negative electrode plate, a separator that isolates the positive electrode and the negative electrode in a manner allowing for hydroxide ion conduction, and an electrolytic solution.
An MOF membrane complex (1) is provided with a porous support (11) and an MOF membrane (12) that is formed of an MOF and that is provided on the support (11). MOF crystal particles (121) in the MOF membrane (12) each have a shape having a polygonal column part (122) and two polygonal pyramid parts (123) of which the bottom surfaces are the two end faces of the polygonal column part (122). Lateral surfaces of the polygonal column part (122) have a striped pattern (P1) that extends in a direction along the two end faces. The standard deviation of the particle sizes of the MOF crystal particles (121) is 2.0-15.0 µm, and the value obtained by dividing the standard deviation of the particle sizes with the average of the particle sizes is 5.0-20.0.
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
This method for treating a zeolite membrane comprises: a step (step S31) for preparing a heat-treated zeolite membrane; a step (step S32) for bringing a moisture-containing gas having a volumetric moisture content of 4,000-65,000 vol by ppm into contact with the zeolite membrane to adsorb water molecules to the zeolite membrane, after the step S31; and a step (step S33) for partially removing the water molecules adsorbed to the zeolite membrane, after the step S32. Consequently, the permeation performance of the zeolite membrane can be stabilized.
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY (Japan)
NGK INSULATORS, LTD. (Japan)
Inventor
Totani Tsuyoshi
Odashima Satoru
Kondo Yoshio
Yamada Kazunari
Abstract
Provided is a wavelength control emitter having excellent heat resistance. A wavelength control emitter according to an embodiment of the present invention comprises a metal layer, a dielectric layer, a plurality of metal electrodes, and a coating layer. The dielectric layer is disposed on one side of the metal layer. The plurality of metal electrodes are arranged on the opposite side to the metal layer with respect to the dielectric layer. The plurality of metal electrodes are arranged at intervals from each other. The coating layer covers at least a part of the plurality of metal electrodes.
This method for estimating the state of a storage battery constituted by a plurality of battery modules connected in series, and controlled by a predetermined control device, comprises: a comparison step for comparing, for each of a plurality of battery modules which include an cell assembly in which a plurality of unit cells are connected, and which are formed by accommodating the cell assembly in a housing having a vacuum heat insulating structure, actual measurement temperatures when a charging/discharging action is performed in the storage battery and actual temperatures when the charging/discharging action was performed under the same conditions as the charging/discharging action; and an estimation step for estimating the state of the storage battery on the basis of the comparison results in the comparison step. In the estimation step, it is possible to distinguish and estimate the occurrence of any of the abnormal states among a failure of a unit cell in any of the plurality of battery modules, the occurrence of deviation of a discharge depth management value held in the control device from the actual discharge depth in the storage battery, and a decrease in the degree of vacuum in the housing in any of the plurality of battery modules.
H01M 10/48 - Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
An electrolytic cell (1) comprises: a metal support (10) having a plurality of communication holes (11) formed in a first main surface (12); and a cell body part (20). The cell body part (20) has a gas diffusion layer (5) disposed on the first main surface (12) of the metal support (10), and a hydrogen electrode layer (6) disposed on the gas diffusion layer (5). v The gas diffusion layer (5) has a through-hole (51) that is continuous with the communication hole (11). The through-hole (51) has a gap space (51a) that enters a gap between the first main surface (12) and the hydrogen electrode layer (6).
An electrolysis cell (1) is provided with a gas container (3) and a cell body part (2). An internal space (3a) of the gas container (3) has a gas supply chamber (a1) connected to a gas supply hole (15), a gas discharge chamber (a2) connected to a gas discharge hole (16), and a gas circulation chamber (a3) connected to communication holes (11) and disposed between the gas supply chamber (a1) and the gas discharge chamber (16). In a plan view of a first main surface (12) of a metal support (10), a welded part (30) includes a first constricted part (31) for partitioning between the gas circulation chamber (a3) and the gas supply chamber (a1).
This interconnector comprises a body, a first oxide layer, and a second oxide layer. The body has a first primary surface and a second primary surface. The second primary surface is the surface opposite the first primary surface. The first oxide layer is disposed on the first primary surface. The second oxide layer is disposed on the second primary surface. The second oxide layer has a thickness different from the first oxide layer.
Provided is a laminated substrate that has excellent heat resistance. This laminated substrate is formed of: a group-III element nitride crystal substrate; and a support substrate composed of a material different from the material constituting the group-III element nitride crystal substrate. The support substrate is composed of a crystal having a hexagonal crystal structure. In a plan view, the minimum value of the angle formed by the m-plane of the group-III element nitride crystal substrate and the m-plane of the support substrate is 1° or more.
H01L 29/04 - Semiconductor bodies characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
An electrolytic cell (1) is provided with: a hydrogen electrode layer (6); an oxygen electrode layer (9); and an electrolyte layer (7) disposed between the hydrogen electrode layer (6) and the oxygen electrode layer (9). The hydrogen electrode layer (6) includes, in order from the electrolyte layer (7) side, a first layer (61), a second layer (62), and a third layer (63). Each of the first layer (61), the second layer (62), and the third layer (63) includes pores and is composed of nickel and a ceramic material having oxide-ion conductivity. The content of the ceramic material in the first layer (61) is greater than the content of the ceramic material in the second layer (62), and the content of the ceramic material in the second layer (62) is greater than the content of the ceramic material in the third layer (63).
C25B 11/053 - Electrodes comprising one or more electrocatalytic coatings on a substrate characterised by multilayer electrocatalytic coatings
C25B 1/042 - Hydrogen or oxygen by electrolysis of water by electrolysis of steam
C25B 9/00 - Cells or assemblies of cellsConstructional parts of cellsAssemblies of constructional parts, e.g. electrode-diaphragm assembliesProcess-related cell features
C25B 11/077 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of a single catalytic element or catalytic compound the compound being a non-noble metal oxide
C25B 11/091 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of at least one catalytic element and at least one catalytic compoundElectrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of two or more catalytic elements or catalytic compounds
Provided is a crystallization method with which a crystal form to be deposited over the entirety of a container can be uniformly controlled. A crystallization method according to an embodiment of the present invention includes: a step for placing a solution containing a crystallization target compound and a solvent in a temperature-controlled container; and a step for evaporating the solvent from the solution disposed in the container. In the step for evaporating the solvent, when a portion in which the peripheral edge of the solution in the container is in contact with the container is taken to be a peripheral portion at the start of the step for evaporating the solvent, the temperature of the peripheral portion to the temperature at the center portion of the container is adjusted to 0.85-1.30.
A heat exchanger 1 according to the present invention comprises: a stacked heat exchanger 2 having a stacked part 21 in which a plurality of plates 20 are stacked, with a first low-temperature fluid space into which a first low-temperature fluid L1 is introduced and a high-temperature fluid space into which a high-temperature fluid H is introduced being formed between the plurality of plates 20, and at least a part of the high-temperature fluid space being open to the periphery of the stacked part 21; and a case 3 in which a case internal space IS communicating with at least a part of the high-temperature fluid space is formed between the stacked part 21 and an inner wall part 30, and a second low-temperature fluid space LS2 into which a second low-temperature fluid L2 is introduced is formed between the inner wall part 30 and an outer wall part 31, wherein the first low-temperature fluid L1 in the first low-temperature fluid space and the high-temperature fluid H in the high-temperature fluid space exchange heat with each other, and the high-temperature fluid H in the case internal space IS and the second low-temperature fluid L2 in the second low-temperature fluid space LS2 exchange heat with each other.
F28D 9/02 - Heat-exchange apparatus having stationary plate-like or laminated conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the heat-exchange media travelling at an angle to one another
F28D 1/06 - Heat-exchange apparatus having stationary conduit assemblies for one heat-exchange medium only, the media being in contact with different sides of the conduit wall, in which the other heat-exchange medium is a large body of fluid, e.g. domestic or motor car radiators with the heat-exchange conduits forming part of, or being attached to, the tank containing the body of fluid
F28F 3/00 - Plate-like or laminated elementsAssemblies of plate-like or laminated elements
F28F 3/08 - Elements constructed for building-up into stacks, e.g. capable of being taken apart for cleaning
Provided is a gas sensor capable of accurately measuring the concentration of carbon dioxide in a gas being measured, regardless of the concentration of water vapor in the gas being measured. In a gas sensor 100: a setting unit sets a target voltage value on the basis of the concentration of water vapor in a gas being measured; a pump control unit adjusts the partial pressure of oxygen within a first internal cavity 20 such that substantially all the water vapor and carbon dioxide in the gas being measured are decomposed by an oxygen pump cell 21, operates a pre-treatment pump cell 50 such that a voltage between an in-cavity pre-treatment electrode 51 and a reference electrode 42 reaches the target voltage value, adjusts the partial pressure of oxygen in a second internal cavity 40 such that hydrogen generated by the decomposition of the water vapor is selectively burned, and adjusts the partial pressure of oxygen in the vicinity of the surface of an in-cavity measuring electrode 44 such that carbon monoxide generated by the decomposition of the carbon dioxide is selectively burned by a measurement pump cell 41; and a concentration calculating unit calculates the carbon dioxide concentration in the gas being measured on the basis of the value of an electric current flowing through the measurement pump cell 41.
A zinc secondary battery (1) comprises: an electrode laminate (3); a case (2) which accommodates the electrode laminate (3); and an alkaline electrolyte solution (4) which is accommodated in the case (2) and in which the entire electrode laminate (3) is immersed. The electrode laminate (3) comprises: a positive electrode plate (31) that includes a positive electrode active material layer (312); a negative electrode plate (32) that faces the positive electrode plate (31) while being positioned away from the positive electrode plate (31) in the thickness direction thereof, the negative electrode plate (32) comprising a negative electrode active material layer (322) that comprises at least one selected from the group consisting of zinc, zinc oxide, a zinc alloy, and a zinc compound; and a separator (33) that isolates the positive electrode plate (31) from the negative electrode plate (32) and can conduct hydroxide ions. An excess volume ratio, which is the percentage of a second volume V2 of the space from a ceiling surface (23) of the case (2), the ceiling surface serving as the upper end of the internal space, to a liquid surface (41) of the alkaline electrolyte solution (4), to a first volume V1 of the internal space of the case (2), is 3% or less.
This oxygen supply device comprises: an oxygen generation layer which contains a first electron conductive material, a first lithium ion conductive material, and a lithium oxide; a lithium deposition layer which is disposed at a distance from the oxygen generation layer in the thickness direction, and which contains a second electron conductive material; a lithium ion conduction part which is disposed between the oxygen generation layer and the lithium deposition layer, and which contains a second lithium ion conductive material; and a cover which covers the lithium deposition layer. The cover includes a lithium sealing part which is in contact with the lithium deposition layer and can transmit water vapor.
C25B 9/00 - Cells or assemblies of cellsConstructional parts of cellsAssemblies of constructional parts, e.g. electrode-diaphragm assembliesProcess-related cell features
An oxygen supply device according to the present invention comprises: an oxygen generation layer that includes a first electron conduction material, a first lithium ion conduction material, and lithium oxide; a lithium deposition layer that is provided at an interval in the thickness direction from the oxygen generation layer and includes a second electron conduction material; a lithium ion conduction part that is provided between the oxygen generation layer and the lithium deposition layer and includes a second lithium ion conduction material; and a packaging material that defines an accommodation space in which the oxygen generation layer, the lithium deposition layer, and the lithium ion conduction part are accommodated and includes an oxygen transmission part that covers the oxygen generation layer and can transmit oxygen. The packaging material includes: a metal first packaging material that contacts the oxygen generation layer and includes a first region that faces the oxygen generation layer; a metal second packaging material that contacts the lithium deposition layer and includes a second region that faces the lithium deposition layer; and an insulating third packaging material that can transmit water vapor and closes a gap defined by the first packaging material and the second packaging material.
C25B 9/00 - Cells or assemblies of cellsConstructional parts of cellsAssemblies of constructional parts, e.g. electrode-diaphragm assembliesProcess-related cell features
This gas supply device comprises: a gas-generating element including a metal cation conductive solid electrolyte; and an exterior material including a part which is electrically connected to the gas-generating element and defining an accommodation space in which the gas-generating element is accommodated. A through-hole connecting the inside and outside of the accommodation space is formed in the exterior material. The exterior material is further provided with a gas-permeable layer that blocks the through-hole and passes electricity in the part thereof to allow the permeation of the gas generated from the gas-generating element.
C25B 9/00 - Cells or assemblies of cellsConstructional parts of cellsAssemblies of constructional parts, e.g. electrode-diaphragm assembliesProcess-related cell features
A honeycomb structure 100 has a plurality of cell channels that pass through the interior thereof and are demarcated by a partitioning wall 112. The partitioning wall 112 contains an acidic adsorbent, and has a diffusion-contributing flow path ratio as represented by the following formula (1) of 3.20×1016to 3.86×1017, and a cell density of 8 to 124 cells/cm2. (1): Diffusion-contributing flow path ratio = (effective diffusion hole diameter [μm] of the partitioning wall × number [number/m3] of effective diffusion holes in the partitioning wall × (1/degree of bending))/thickness [mm] of the partitioning wall
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 46/00 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
Provided is a method for adjusting the temperature of a member for a semiconductor manufacturing device, the method reducing a local temperature difference in a ceiling portion located on the most upstream side of a ceiling of a refrigerant flow passage to enhance soaking properties of a wafer mounting surface. This method for adjusting the temperature of a member for a semiconductor manufacturing apparatus involves: a step A for heating a ceramic substrate to a predetermined temperature while supplying a refrigerant to a refrigerant flow passage at a predetermined flow rate; a step B for confirming the presence or absence of a local temperature difference in a top surface portion of the ceramic substrate located immediately above a ceiling portion located on the most upstream side of a ceiling of the refrigerant flow passage during performing the step A; and a step C for changing the flow velocity of the refrigerant flowing through the ceiling portion with respect to the flow velocity in the step A so that the local temperature difference decreases, while supplying the refrigerant to the refrigerant flow passage at the same flow rate as that in the step A, and heating the ceramic substrate to the same temperature as that in the step A, when the local temperature difference in the top surface portion is confirmed as a result of the step B.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
A fuel identification sensor (101) includes: an insulating layer (10); a first detection electrode (21) and a second detection electrode (22) on the insulating layer (10); and a protective layer (50) covering the first detection electrode (21) and the second detection electrode (22). The fuel identification sensor (101) detects a detection value corresponding to the dielectric constant of mixed fuel (LQ). A forced regeneration execution unit (633) executes forced regeneration of a diesel particulate filter (622). An accumulation amount estimation unit (631) estimates an accumulation amount of soot in the diesel particulate filter (622) by considering the detection value of the fuel identification sensor (101). A determination unit (632) operates the forced regeneration execution unit (633) in accordance with the accumulation amount of the soot estimated by the accumulation amount estimation unit (631).
F01N 3/023 - Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust by means of filters using means for regenerating the filters, e.g. by burning trapped particles
91.
CONTROL DEVICE FOR INTERNAL COMBUSTION ENGINE SYSTEM
An internal combustion engine system (ES) is provided with an internal combustion engine (500) that combusts a mixed fuel (LQ) of light oil and added fuel. A fuel identification sensor (101) includes a protective layer (50) that covers a first detection electrode (21) and a second detection electrode (22) on an insulating layer (10) and is composed of an insulator. The fuel identification sensor (101) detects a detection value corresponding to the dielectric constant of the mixed fuel (LQ) due to the mixed fuel (LQ) being disposed so as to face the first detection electrode (21) and the second detection electrode (22) with the protective layer (50) interposed therebetween. A stipulation storage unit (710) stores an allowable range of the detection value in response to the mixing ratio of the added fuel in the mixed fuel (LQ) being equal to or less than a stipulated value. A detection value acquisition unit (720) acquires the detection value from the fuel identification sensor (101). A mode-specific operation unit (740) starts operating the internal combustion engine system (ES) in a restricted mode different from a normal mode when the detection value is outside the allowable range.
F02D 45/00 - Electrical control not provided for in groups
F02D 29/02 - Controlling engines, such controlling being peculiar to the devices driven thereby, the devices being other than parts or accessories essential to engine operation, e.g. controlling of engines by signals external thereto peculiar to engines driving vehiclesControlling engines, such controlling being peculiar to the devices driven thereby, the devices being other than parts or accessories essential to engine operation, e.g. controlling of engines by signals external thereto peculiar to engines driving variable-pitch propellers
G01N 27/22 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
An oxygen supply device (1) comprises: an oxygen generation layer (2) containing a first electron conductive material, a first lithium ion conductive material, and a lithium oxide; a lithium deposition layer (3) disposed at an interval from the oxygen generation layer (2) in the thickness direction and including a second electron conductive material; a lithium ion conduction part (4) disposed between the oxygen generation layer (2) and the lithium deposition layer (3) and including a second lithium ion conductive material; and a cover (6) covering the lithium deposition layer (3). The cover (6) comprises an externally-facing lithium sealing part (60) disposed inside a passageway (68) that contacts the lithium deposition layer (3) or faces the lithium deposition layer (3). The lithium sealing part (60) is permeable to water vapor.
C25B 9/00 - Cells or assemblies of cellsConstructional parts of cellsAssemblies of constructional parts, e.g. electrode-diaphragm assembliesProcess-related cell features
Provided is a flash light source device having a simple configuration, yet capable of expanding the emission angle of flash light and achieving miniaturization. A flash light source device (100) according to an embodiment of the present invention comprises: a light propagation unit (1); an optical frequency comb generation unit (2); and a light emission unit (3). The light propagation unit (1) is capable of propagating laser light of a single wavelength. The optical frequency comb generation unit (2) is optically connected to the light propagation unit (1). The optical frequency comb generation unit (2) is configured to generate an optical frequency comb from laser light transmitted from the light propagation unit (1). The optical frequency comb generated by the optical frequency comb generation unit (2) is transmitted to the light emission unit (3). The light emission unit (3) is provided with a diffraction grating (33). The light emission unit (3) is configured to diffract light of a plurality of wavelengths, which are included in the optical frequency comb, by means of the diffraction grating (33), and emit the light at mutually different emission angles (α).
G02F 1/295 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the position or the direction of light beams, i.e. deflection in an optical waveguide structure
G02B 6/122 - Basic optical elements, e.g. light-guiding paths
G02F 1/03 - Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulatingNon-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels or Kerr effect
A honeycomb structure 100 has a plurality of cell channels passing through the interior of the structure and partitioned by a partition wall 112. The partition wall 112 contains an acidic adsorbent, and has a diffusion-contributing flow path ratio, which is represented by the following formula (1), of 3.20×1016to 3.86×1017and a cell density of 8-124 cells/cm2. (1): Diffusion-contributing flow path ratio = (partition wall effective diffusion hole diameter [μm] × number of effective diffusion holes in partition wall [holes/m3] × (1/tortuosity factor)) / partition wall thickness [mm]
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 46/00 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
An electrolytic cell (1) comprises a hydrogen electrode layer (6), an oxygen electrode layer (9), and an electrolyte layer (7) that is positioned between the hydrogen electrode layer (6) and the oxygen electrode layer (9). The hydrogen electrode layer (6) has a first layer (61), a second layer (62), and a third layer (63) that are arranged in order from the electrolyte layer (7) side. Each of the first layer (61), the second layer (62), and the third layer (63) is composed of Ni and an oxide ion-conductive ceramic material, and includes pores. The average particle size of the Ni in the second layer (62) is larger than the average particle size of the Ni in the first layer (61), and the average particle size of the Ni in the second layer (62) is smaller than the average particle size of the Ni in the third layer (63).
C25B 11/053 - Electrodes comprising one or more electrocatalytic coatings on a substrate characterised by multilayer electrocatalytic coatings
C25B 1/042 - Hydrogen or oxygen by electrolysis of water by electrolysis of steam
C25B 9/00 - Cells or assemblies of cellsConstructional parts of cellsAssemblies of constructional parts, e.g. electrode-diaphragm assembliesProcess-related cell features
C25B 11/077 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of a single catalytic element or catalytic compound the compound being a non-noble metal oxide
C25B 11/091 - Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of at least one catalytic element and at least one catalytic compoundElectrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalysts material consisting of two or more catalytic elements or catalytic compounds
Provided is a susceptor having an inexpensive configuration suitable for suppressing in-plane variation in the distance between a surface of a ceramic plate and an RF electrode, while also having RF functionality. The susceptor comprises: a disc-shaped ceramic plate having a first surface and a second surface; an internal electrode embedded in the ceramic plate; a metal layer provided as an RF electrode on the whole or a part of the second surface of the ceramic plate; a disc-shaped cooling plate provided at a predetermined distance from the second surface of the ceramic plate; a heat transfer space present between the metal layer and the cooling plate and enabling heat transfer through a gas; a seal member provided between the ceramic plate and the cooling plate so as to provide the heat transfer space with airtightness along the outer peripheries of the ceramic plate and the cooling plate; and an RF conductive member provided at a position on the inner peripheral side of the seal member between the ceramic plate and the cooling plate, and securing electrical connection between the metal layer and the cooling plate.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
This honeycomb structure includes a plurality of columnar honeycomb segments 100 including an adsorbent capable of adsorbing greenhouse gases. Side surfaces 102 of the plurality of columnar honeycomb segments 100 are arranged so as to face each other, and at least portions of the opposing side surfaces 102 are in direct or indirect contact with each other. The proportion of one side surface 102 occupied by a contact section 104 thereof is 0.6-92.0%. The lengths of the contact section 104 in the axial direction of the columnar honeycomb segment 100 and in a direction orthogonal to the axial direction are each 2% or more of the length of the the side surface 102.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 46/00 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
The purpose of the present invention is to provide a battery module with which it is possible to pressurize a battery with a simple structure. This battery module comprises: a module housing; a battery assembly that is housed in the module housing in a vertical direction and is composed of a plurality of secondary batteries having a vertically long shape and being juxtaposed in parallel to each other; a pair of end plates that are provided on both sides of the battery assembly and face each other in the direction in which the plurality of secondary batteries are juxtaposed; and a plurality of rods that are provided perpendicular to the pair of end plates and connect the pair of end plates. Each of the rods has an extension part that extends passing through at least one end plate, and an energization means that biases at least one end plate toward the other end plate is provided in each extension part of the rod.
H01M 50/264 - MountingsSecondary casings or framesRacks, modules or packsSuspension devicesShock absorbersTransport or carrying devicesHolders with fastening means, e.g. locks for cells or batteries, e.g. straps, tie rods or peripheral frames
H01M 50/209 - Racks, modules or packs for multiple batteries or multiple cells characterised by their shape adapted for prismatic or rectangular cells
H01M 50/262 - MountingsSecondary casings or framesRacks, modules or packsSuspension devicesShock absorbersTransport or carrying devicesHolders with fastening means, e.g. locks
CHARGE CONTROL METHOD FOR ZINC SECONDARY BATTERY, CHARGE CONTROL DEVICE FOR ZINC SECONDARY BATTERY, AND CHARGE CONTROL SYSTEM FOR ZINC SECONDARY BATTERY
This charge control method for a zinc secondary battery includes: a charging rate measurement step for measuring a charging rate of the zinc secondary battery after charging is started; a first determination step for determining whether or not the charging rate measured in the charging rate measurement step is increased by a predetermined percentage as compared with a charging rate before starting measurement; an open circuit voltage measurement step for measuring an open circuit voltage value of the zinc secondary battery when determination is made that the charging rate measured in the first determination step has increased by the predetermined percentage; a difference calculation step for calculating a difference between the open circuit voltage value measured in the open circuit voltage measurement step and a predetermined ideal open circuit voltage value; a second determination step for determining whether or not the difference calculated by the difference calculation step is equal to or greater than a predetermined value; and an oxygen generation suppression control execution step for executing oxygen generation suppression control for suppressing generation of oxygen during charging when determination is made that the difference is equal to or greater than the predetermined value in the second determination step.
G01R 31/378 - Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC] specially adapted for the type of battery or accumulator
G01R 31/3828 - Arrangements for monitoring battery or accumulator variables, e.g. SoC using current integration
G01R 31/3842 - Arrangements for monitoring battery or accumulator variables, e.g. SoC combining voltage and current measurements
H01M 10/48 - Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H02J 7/10 - Regulation of the charging current or voltage using discharge tubes or semiconductor devices using semiconductor devices only
patents
