A transient operation method for a separation device includes a separation membrane complex including: a separation membrane; and a substrate arranged on one side of the separation membrane, the separation device having a first flow path and a second flow path, the first flow path being positioned on a side closer to the separation membrane of the separation membrane complex, the second flow path being positioned on a side closer to the substrate of the separation membrane complex, the transient operation method including heating the separation membrane complex by supplying a gas at least to the second flow path. The gas supplied to the second flow path satisfies the specific formula.
A gas separation apparatus includes a gas supply part and a zeolite membrane. The gas supply part supplies a mixed gas at a pressure greater than or equal to 10 atm and less than or equal to 200 atm. The mixed gas contains at least CH4, CO2, and N2. A water content of the mixed gas is made less than or equal to 3000 ppm. The zeolite membrane allows CO2 and N2 in the mixed gas to permeate therethrough, to thereby separate CO2 and N2 from CH4. The zeolite membrane is made of zeolite. The zeolite contains Al. A ratio of alkali metal to whole framework elements in the zeolite is less than or equal to 6.0 mol %. An amount of substance of the alkali metal in the zeolite is less than an amount of substance of Al.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A transient operation method for a separation device includes a separation membrane complex including: a separation membrane; and a substrate arranged on one side of the separation membrane, the separation device having a first flow path and a second flow path, the first flow path being positioned on a side closer to the separation membrane of the separation membrane complex, the second flow path being positioned on a side closer to the substrate of the separation membrane complex, the transient operation method including supplying gases to the first flow path and the second flow path, respectively, and heating the separation membrane complex. An average relative humidity of a gas A supplied to the first flow path is higher than an average relative humidity of a gas B supplied to the second flow path.
A gas adsorption/desorption unit and a gas adsorption/desorption device, in which a gas absorbent can be more easily and evenly heated. A gas adsorption/desorption unit according to this invention includes: one or more first honeycomb structures including at least one honeycomb structure portion having an outer peripheral wall and partition walls provided on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells each extending from one end face to other end face of the honeycomb structure portion to form a flow path, and a pair of electrode layers disposed on the outer peripheral wall or the end faces of the honeycomb structure portion; and electrode terminals connected to the pair of electrode layers, wherein at least one honeycomb structure portion of the one or more first honeycomb structures includes a gas adsorbent and is made of a material having a PTC property.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
5.
METHOD FOR MANUFACTURING JOINED BODY AND JOINED BODY
Provided is a method for manufacturing a joined body, the method including: an outer peripheral processing step of forming an outer peripheral processed portion, ground inward from an edge portion along a main surface of one of a piezoelectric material substrate and a support substrate; a joining step of joining one of the piezoelectric material substrate and the support substrate, which is formed thereon with the outer peripheral processed portion, to a main surface of the other one, with a main surface side of the one of the piezoelectric material substrate and the support substrate serving as a joining surface side; and a thinning step of thinning the joined piezoelectric material substrate. Therefore, there are provided a joined body etc. in which a corner portion is not formed in an outer peripheral portion and breakage or cracking is less likely to occur in the outer peripheral portion in subsequent steps.
H10N 30/072 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
B32B 9/04 - Layered products essentially comprising a particular substance not covered by groups comprising such substance as the main or only constituent of a layer, next to another layer of a specific substance
A heater element includes: a honeycomb structure portion capable of generating heat by energization, including an outer peripheral wall, and partition walls disposed on an inner peripheral side of the outer peripheral wall, the partition walls partitioning a plurality of cells that form flow paths extending from a first end surface to a second end surface, and the partition walls including a material having a PTC characteristic; a first electrode layer covering a part or all of a surface of the partition walls forming the first end surface; a second electrode layer covering a part or all of a surface of the partition walls forming the second end surface; a first moisture absorbent-containing layer covering a part of an outer surface of the first electrode layer; and a second moisture absorbent-containing layer covering a part of an outer surface of the second electrode layer.
H05B 3/16 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being mounted on an insulating base
An AlN single crystal substrate containing carbon and boron as impurities is provided, in which a ratio of a boron concentration to a carbon concentration is 0.22≤[boron concentration]/[carbon concentration]≤6.85 when the carbon concentration and the boron concentration are expressed in terms of the number of atoms per 1 cm3. By adjusting the concentration of impurities, an AlN single crystal substrate that can achieve a high transmittance in the ultraviolet region; and the like are provided.
KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION (Japan)
NGK INSULATORS, LTD. (Japan)
Inventor
Takakuwa, Osamu
Ishikawa, Takahiro
Abstract
Provided is a hydrogen-resistant material for being processed into a hydrogen-resistant structural part used by being operated in a hydrogen atmosphere. This material is composed of a beryllium copper alloy containing 0.2 to 2.7% by mass of Be, and 0.2 to 2.5% by mass in total of at least one selected from Co, Ni, and Fe, the balance consisting of Cu and unavoidable impurities, a total content of Cu, Be, Co, Ni, and Fe being 99.0% by mass of more of the beryllium copper alloy. This hydrogen-resistant material exhibits a tensile strength of 700 MPa or more and exhibits a relative reduction of area (RRA) of 0.80 or more according to a slow strain rate tensile test, in each of an air atmosphere and a hydrogen atmosphere, and exhibits a fracture toughness value KIC of 50 MPa·m1/2 or more, in each of an air atmosphere and a hydrogen atmosphere.
A sensor element includes an element body, an adjustment pump cell having an inner electrode, and a measurement pump cell having a measurement electrode. When a first diffusion resistance from the outside to the inner electrode through a gas inlet is defined as Da, and a second diffusion resistance from the outside to the measurement electrode through the gas inlet is defined as Db, the sensor element is configured such that Db×Db/Da≥3000 [cm−1] is satisfied.
A sensor element includes an element body, at least one adjustment pump cell having an inner electrode disposed in an oxygen concentration adjustment chamber, a measurement electrode, a diffusion rate-limiting section. A height t [mm] of the diffusion rate-limiting section, obtained based on the following parameters: a path length L [cm] of the diffusion rate-limiting section; a width H [cm] of the diffusion rate-limiting section; a limiting current Ip [A] of the adjustment pump cell; the Faraday constant F [A·sec/mol]; the diffusion coefficient D [cm2/sec] of oxygen; the gas constant R [cm3·atm/mol·K]; a temperature T [K] of the inner electrode; an oxygen partial pressure Poe [atm] in the measurement gas; and an oxygen partial pressure Pod [atm] in the oxygen concentration adjustment chamber, is 0.0035 or greater.
A sensor element for detecting a concentration of a specific gas in a measurement-object gas, the sensor element includes: an element body including an oxygen-ion-conductive solid electrolyte layer, and including a measurement-object gas flow section inside that introduces the measurement-object gas and allows the measurement-object gas to flow through; an adjustment pump cell including an inner adjustment electrode provided in an oxygen concentration adjustment chamber of the measurement-object gas flow section; and a measurement pump cell including a measurement electrode provided in a measurement chamber that is located downstream of the oxygen concentration adjustment chamber in the measurement-object gas flow section; wherein, letting Ve [mm3] be a volume of the measurement electrode, and Vr [mm3] be a volume of the measurement chamber, and defining a volume ratio as Fv=Ve/(Vr−Ve), 0.05≤Fv≤0.21 is satisfied.
A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface and incorporating an electrode; an electrically conductive plate provided on a lower surface side of the ceramic plate; an electrically conductive bonding layer that bonds the ceramic plate with the electrically conductive plate; a gas intermediate passage embedded in the electrically conductive bonding layer or provided at an interface between the electrically conductive bonding layer and the electrically conductive plate; a plurality of gas supply passages extending from the gas intermediate passage through the electrically conductive bonding layer and the ceramic plate to the wafer placement surface; and a gas introduction passage provided so as to extend through the electrically conductive plate and communicate with the gas intermediate passage, the number of the gas introduction passages being smaller than the number of the gas supply passages communicating with the gas intermediate passage.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
13.
COMPOSITE SUBSTRATE AND METHOD OF MANUFACTURING COMPOSITE SUBSTRATE
A composite substrate includes a piezoelectric material substrate made of an LiNbO3 or LiTaO3 material, a support substrate that supports the piezoelectric material substrate, and an intermediate layer provided on the support substrate, in which the piezoelectric material substrate and the support substrate are bonded to each other via the intermediate layer, the intermediate layer contains at least one of SiO2, MgF2, and CaF2, and the piezoelectric material substrate includes a first layer that does not contain inert gas atoms, a second layer that is disposed on a side closer to the intermediate layer than the first layer and contains the inert gas, and a third layer that contacts the intermediate layer, and does not contain the inert gas or contains the inert gas with a lower content than the content in the second layer.
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
H10N 30/072 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
A vehicle air conditioning system includes: an air conditioning duct through which air can flow; at least one humidity controlling device including: a honeycomb structure having an outer peripheral wall and partition walls provided on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face; and a moisture absorbing layer provided on a surface of each of the partition walls, the humidity controlling device being provided in the air conditioning duct; and a control unit configured to control a flow velocity of the air flowing through the cells of the humidity controlling device. The control unit includes controlling the flow velocity of the air flowing in the humidity controlling device to 0.23 to 1.40 m/s in the moisture absorption process of the humidity controlling device.
D04B 1/14 - Other fabrics or articles characterised primarily by the use of particular thread materials
D04B 21/12 - Open-work fabrics characterised by thread material
D06M 11/83 - Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with metalsTreating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with metal-generating compounds, e.g. metal carbonylsReduction of metal compounds on textiles
A heater for a semiconductor manufacturing apparatus includes a ceramic base and a heating element. The ceramic base contains aluminum nitride. The heating element is embedded in the ceramic base. The ceramic base contains two or more kinds of rare earth elements and contains Yb as one of the rare earth elements. A total content ratio of the rare earth elements in the ceramic base is 4.5 mass % or less in terms of oxide. A content ratio of Yb in the ceramic base is 0.3 mass % or more and 1.3 mass % or less in terms of oxide.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A joined body 1 includes a piezoelectric layer 11a including a piezoelectric material; a dielectric film 13 arranged under the piezoelectric layer 11a; a support substrate 14 joined with the piezoelectric layer 11a via the dielectric film 13; and a sacrificial layer provided between the support substrate 14 and the piezoelectric layer 11a, and capable of including a hollow part 17 formed therein. The dielectric film 13 includes SiO2 as a main component, and has a H content of 0% or more and 1% or less in terms of atomic ratio. As a result of this, a desired joined body including a hollow part is provided. Further, there is provided a method for manufacturing a joined body, in which the etching rate of the dielectric film is small, and by which the sacrificial layer can be selectively removed during etching.
H10N 30/00 - Piezoelectric or electrostrictive devices
H10N 30/072 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
H10N 30/086 - Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
18.
MANUFACTURING METHOD AND JOINING METHOD OF JOINED BODY
A method for manufacturing a joined body, includes: an activating step of activating respective surfaces of a first substrate and a second substrate having the surfaces each including SiO2 as a main component by a plasma; a joining step of joining the activated surfaces of the first substrate and the second substrate at a degree of vacuum of 1 mbar or more and 400 mbar or less; and a heating step of heating the first substrate and the second substrate joined with each other. As a result of this, the manufacturing method and the joining method of a joined body capable of combining the reduction of generation of voids and the joint strength are provided.
A ceramic susceptor includes a substrate-mounting plate. The substrate-mounting plate contains aluminum nitride and a spinel. A content ratio of the aluminum nitride in the substrate-mounting plate is 95.0 mass % or more and 99.9 mass % or less. A content ratio of the spinel in the substrate-mounting plate is 0.1 mass % or more and 1.0 mass or less in terms of oxide. The aluminum nitride has a polycrystalline structure. The spinel is positioned at a grain boundary between crystal grains of the aluminum nitride. The spinel has a lattice constant of 8.040 Å or more and 8.110 Å or less.
C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
20.
SEPARATION MEMBRANE SYSTEM AND TEMPERATURE INCREASE METHOD FOR A SEPARATION MEMBRANE
A separation membrane system includes: a supply line configured to supply a mixed gas of a polar gas and a non-polar gas to a separation membrane; and a measurement device configured to measure a flow rate of the non-polar gas that has permeated through the separation membrane. In the separation membrane system, the mixed gas may be a heated gas.
A pillar-shaped honeycomb structure,
wherein a cell density based on a total number of a plurality of inlet cells and a plurality of outlet cells is 29 to 43 cells/cm2,
wherein an average thickness of partition walls is 0.173 mm or more and 0.236 mm or less, and
wherein assuming an average value of opening diameters of the plurality of outlet cells except for those adjacent to an outer peripheral side wall is Dout, and an average value of opening diameters of the plurality of inlet cells except for those adjacent to the outer peripheral side wall is Din, 1.20≤Din/Dout≤1.38 is satisfied.
A honeycomb structure includes an outer peripheral side wall; a plurality of first cells having an opening on the first end surface and having a sealing portion on the second end surface; and a plurality of second cells having the sealing portion on the first end surface and having the opening on the second end surface, wherein the first cells and the second cells are arranged adjacent to each other with a partition wall interposed therebetween; wherein the sealing portion is composed of a ceramic containing MgO:9.0 to 13.4% by mass, Al2O3: 29.0 to 35.5% by mass, and SiO2: 50.0 to 58.0% by mass, and wherein an arithmetic average height Sa of the sealing portions on the first end surface and the second end surface is 18.0 μm or less, respectively.
A honeycomb filter includes a pillar-shaped honeycomb structure body having a porous partition wall arranged to surround a plurality of cells; and
a plugging portion provided at an open end on the first end face side or the second end face side of each of the cells, wherein
In a pore diameter distribution of the partition wall obtained by structural analysis, the pore diameter (m) whose cumulative pore volume is 90% of the total pore volume is defined as D90 (m),
In a porous structure of the partition wall obtained by the structural analysis, the average value (m) of the equivalent circle diameter of the neck part having the smallest flow path area of communication pores in the porous structure is defined as an average neck diameter (m), and
the product of the D90 (m) and the average neck diameter (m) is 1.0×10−10 m2 or more and 9.0×10−10 m2 or less.
An inductor includes a conductor portion and a magnetic substance portion. The conductor portion is made of a sintered material containing sintered metal. The magnetic substance portion is made of ceramics, and includes a plurality of magnetic substance segments disposed at different positions in one direction. Each of the magnetic substance segments is penetrated by the conductor portion and inorganically bonded to the conductor portion. The plurality of magnetic substance segments include at least one first magnetic substance segment and at least one second magnetic substance segment. The at least one first magnetic substance segment is made of a first magnetic material with a permeability having a peak at a first frequency. The at least one second magnetic substance segment is made of a second magnetic material with a permeability having a peak at a second frequency different from the first frequency.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
A method of manufacturing a wavelength conversion element including a periodic polarization inversion structure, includes: forming the periodic polarization inversion structure by alternately forming polarization inversion portions and non-polarization inversion portions on a ferroelectric substrate; etching a surface of the ferroelectric substrate provided with the periodic polarization inversion structure, to form level differences between the polarization inversion portions and the non-polarization inversion portions; forming a joining layer having a first thickness on the ferroelectric substrate provided with the level differences; polishing a surface of the joining layer to cause the joining layer to have a second thickness; and joining a support substrate to the polished surface of the joining layer.
A separation membrane complex includes a porous support and a separation membrane which is formed on the support and composed of metal organic framework MIL-96. In an X-ray diffraction pattern obtained by X-ray irradiation onto a surface of the separation membrane, an intensity of a peak existing in the vicinity of 2θ=5.6° is not higher than 0.15 times an intensity of a peak existing in the vicinity of 2θ=9.0° and not higher than 0.4 times an intensity of a peak existing in the vicinity of 2θ=16.6°.
B01D 53/02 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography
B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
27.
HONEYCOMB STRUCTURE, FORMING RAW MATERIAL COMPOSITION, AND METHOD FOR PRODUCING POROUS BODY
A honeycomb structure includes partition walls that define a plurality of cells extending from one end surface to the other end surface, wherein the partition walls include silicon carbide, silicon, and a firing aid, wherein the firing aid includes aluminum oxide, silicon oxide, and strontium oxide, and assuming a total parts by mass of the aluminum oxide, the silicon oxide, and the strontium oxide with respect to the total of 100 parts by mass of the silicon carbide and the silicon in the partition walls is T1, and a part by mass of the aluminum oxide with respect to the total of 100 parts by mass of the silicon carbide and the silicon in the partition walls is A1, 0.045≤A1/T1 is satisfied.
C04B 35/565 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbides based on silicon carbide
B01J 27/182 - PhosphorusCompounds thereof with silicon
A method for inspecting a setter, which is disposed between a shelf board and a honeycomb formed body when the honeycomb formed body is fired, the setter including a placement surface for placing the honeycomb formed body, the method includes: a step A1 of imaging the placement surface using a 3D scanner to obtain a first image of the placement surface, wherein each pixel constituting the first image has a coordinate information and a height information; and a step B1 of determining whether or not there is a local height abnormality on the placement surface based on the coordinate information and the height information of each pixel constituting the first image of the placement surface.
An air conditioning system includes a heat pump cycle having a refrigerant pipe capable of circulating a refrigerant therethrough, and a compressor capable of compressing the refrigerant. A heating portion capable of circulating the refrigerant therethrough and capable of heating the refrigerant by electromagnetic induction is connected in the middle of the refrigerant pipe.
A Group-III element nitride substrate includes a first main surface and a second main surface facing each other, wherein a fluctuation width of a Young's modulus in a thickness direction of the Group-III element nitride substrate is 50% or less.
C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
A connector, which includes a plurality of contacts and is configured to bring the plurality of contacts into contact with a plurality of electrode portions provided on a surface of a sensor element having a flat plate shape, includes a pair of housings extending in an extending direction of the plurality of contacts and configured to sandwich the sensor element. At least one housing of the pair of housings includes a plurality of protruding portions extending from one end to another end of the one housing and protruding toward the sensor element, the protruding portions being formed at predetermined intervals along a direction orthogonal to the extending direction, and the contacts are respectively provided in a plurality of grooves formed by the plurality of protruding portions.
An electrochemical cell includes a gas container and a cell body portion. The gas container includes a metal support having a plurality of communication holes formed through a main surface thereof, a gas supply hole, and a gas discharge hole, a flow path member defining an internal space between the metal support and the flow path member, and a welded portion sealing a gap between the metal support and the flow path member. The internal space includes a gas supply chamber in communication with the gas supply hole, a gas discharge chamber in communication with the gas discharge hole, and a gas distribution chamber disposed between the gas supply chamber and the gas discharge chamber. When viewed in a plan view of the main surface, the welded portion includes a narrowing portion for dividing the gas distribution chamber from the gas supply chamber or the gas discharge chamber.
An electrochemical cell includes a metal support having a plurality of connecting holes formed in a principal surface and a cell body disposed on the principal surface. The cell body has a gas diffusion layer disposed on the principal surface, a first electrode layer disposed on the gas diffusion layer, a second electrode layer and an electrolyte layer disposed between the first electrode layer and the second electrode layer. The gas diffusion layer has a body portion located in a gap between the metal support and the first electrode layer and a protruding portion protruding from the body portion to the connecting holes. The protruding portion covers a portion of an inner circumferential surface of the connecting hole.
A wafer placement table includes a ceramic plate; an electrically conductive plate joined to a bottom surface of the ceramic plate; a ceramic plate penetrating part extending through the ceramic plate; an electrically insulating gas passage plug provided at the ceramic plate penetrating part; a gas introduction passage provided at least inside the electrically conductive plate; and an electrically conductive gas passage part provided in the gas introduction passage, the electrically conductive gas passage part being in contact with a bottom surface of the electrically insulating gas passage plug, the electrically conductive gas passage part being electrically continuous with the electrically conductive plate, the electrically conductive gas passage part allowing gas to pass between the electrically insulating gas passage plug and the gas introduction passage, wherein the electrically conductive gas passage part has a plate spring that presses the electrically insulating gas passage plug upward with elastic force.
A method for holding a saggar conveyed out from a heat treatment furnace is disclosed. The method may include: holding the saggar by a pair of holding members configured to be movable in a left-right direction; and positioning the saggar held by the pair of holding members in an up-down direction at a predetermined position by moving the saggar in the up-down direction perpendicular to the left-right direction relative to the pair of holding members.
F27B 9/39 - Arrangement of devices for discharging
F27B 9/26 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatmentFurnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path on or in trucks, sleds, or containers
F27D 3/12 - Travelling or movable supports or containers for the charge
A robot hand may include a hand arm unit for holding a saggar conveyed out from a heat treatment furnace and a cooling mechanism for cooling the hand arm unit. A robot may include a robot arm and the robot hand attached to the robot arm and configured to hold the saggar conveyed out from the heat treatment furnace.
B25J 11/00 - Manipulators not otherwise provided for
B25J 19/00 - Accessories fitted to manipulators, e.g. for monitoring, for viewingSafety devices combined with or specially adapted for use in connection with manipulators
A ceramic-supported palladium catalyst includes: palladium serving as an active component; and a ceramics carrier for supporting the palladium. In the ceramics carrier, a content ratio of aluminum oxide is from 15 mass % to 45 mass %, a content ratio of silicon oxide is from 40 mass % to 60 mass %, and a content ratio of magnesium oxide is from 5 mass % to 30 mass %.
The present channel structure includes a first substrate, a second substrate, and a spacer. The first substrate includes a gas permeated portion. The gas permeated portion is a portion causing a gas to permeate therethrough. The second substrate includes a protrusion. The protrusion protrudes toward the first substrate. The spacer is disposed between the protrusion and the first substrate. The spacer is configured to produce a gap between the protrusion and the first substrate.
The present inter-connector includes a body, a first oxide layer, and a second oxide layer. The body includes a first principal surface and a second principal surface. The second principal surface is opposite to the first principal surface. The first oxide layer is disposed on the first principal surface. The second oxide layer is disposed on the second principal surface. The second oxide layer is different in thickness from the first oxide layer.
The present inter-connector includes a body and a plurality of oxide layers. The body includes a first principal surface, a second principal surface, and a plurality of protrusions. The second principal surface faces an opposite side from the first principal surface. The protrusions are provided on the first principal surface. Each of the plurality of oxide layers is disposed on a lateral surface of each of the plurality of protrusions. At least one of the plurality of oxide layers has a thickness distributed to induce the inter-connector to be warped to bulge at the body toward the second principal surface.
A pillar-shaped honeycomb structure includes an outer peripheral side wall, a plurality of inlet cells, and a plurality of outlet cells, wherein at least a part of the plurality of inlet cells are adjacent to at least a part of the plurality of outlet cells with each of partition walls interposed therebetween, wherein a cell density based on a total number of the plurality of inlet cells and the plurality of outlet cells is 35 to 47 cells/cm2, and wherein assuming an average value of opening diameters of the plurality of outlet cells except for those adjacent to the outer peripheral side wall is Dout, and an average value of opening diameters of the plurality of inlet cells except for those adjacent to the outer peripheral side wall is Din, 0.78≤Din/Dout≤0.94 is satisfied.
A robot hand may include: a pair of holding members configured to hold a saggar in a left-right direction after the saggar is conveyed out from a heat treatment furnace; a first claw placed on an upper side or a lower side of the saggar when the saggar is held by the pair of holding members; and a first pressing member for pressing the saggar held by the pair of holding members against the first claw.
A method of producing a supported palladium catalyst includes the steps of: oxidizing a palladium compound by heating; dissolving the palladium compound after the heating in a solvent to prepare a palladium compound solution; and bringing the palladium compound solution into contact with a carrier.
A wafer placement table includes a resin layer joining a ceramic plate and a conductive plate. The ceramic plate has an insulative gas passage plug. The resin layer has a resin layer through portion that is larger than the insulative gas passage plug in plan view. The conductive plate has a gas introduction path communicating with the insulative gas passage plug via the resin layer through portion. A conductive film is provided in the lower surface of the ceramic plate and is larger than the resin layer through portion in plan view. A conductive connecting portion is provided in the gas introduction path and is smaller than the resin layer through portion in plan view. The conductive connecting portion electrically connects the conductive film and the conductive plate to each other and allows the gas to flow from the gas introduction path to the insulative gas passage plug.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A heat exchanger includes a first honeycomb structure, a first cylindrical member, and a second honeycomb structure. The first honeycomb structure has an outer peripheral wall and partition walls that are disposed on an inner side of the outer peripheral wall and define a plurality of cells to form flow paths for a first fluid. The first outer cylinder is fitted into the outer peripheral wall of the first honeycomb structure. The second honeycomb structure has an outer peripheral wall, an inner peripheral wall, and partition walls that are disposed between the outer peripheral wall and the inner peripheral wall and that define a plurality of cells which serve as flow paths for the second fluid, and the inner peripheral wall is fitted into the first cylindrical member.
F28D 7/16 - Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged in parallel spaced relation
A method of manufacturing a waveguide device includes: forming, in a first surface of a non-linear optical material substrate, a plurality of groove portions so that one groove portion is spaced apart from another groove portion, and configuring, as a ridge waveguide, at least one of portions of the non-linear optical material substrate that are located between groove portions adjacent to each other; forming, on the first surface of the non-linear optical material substrate, a first low-refractive index layer which has a thickness greater than a depth of the groove portions, so that the ridge waveguide is covered; polishing the first low-refractive index layer from an opposite side from the non-linear optical material substrate to render a surface of the first low-refractive index layer a flat surface; and bonding a first support substrate to the flat surface of the first low-refractive index layer.
A heat conductive member includes a honeycomb structure including: an outer peripheral wall; and a plurality of partition walls arranged on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face to form a flow path for a first fluid. In a cross section of the honeycomb structure perpendicular to a flow path direction for the first fluid, the partition walls include a plurality of first partition walls extending in a radial direction and a plurality of second partition walls extending in a circumferential direction. At least a part of the first partition walls has a thickness of a portion that defines the cells closest to the outer peripheral wall larger than a thickness of a portion that defines the cells closest to a central portion.
F28D 7/16 - Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall the conduits being arranged in parallel spaced relation
F28F 21/04 - Constructions of heat-exchange apparatus characterised by the selection of particular materials of ceramicConstructions of heat-exchange apparatus characterised by the selection of particular materials of concreteConstructions of heat-exchange apparatus characterised by the selection of particular materials of natural stone
There is provided a susceptor including: a ceramic plate including a first surface and a second surface; an internal electrode embedded in the ceramic plate; a metal layer provided as an RF electrode on an entirety or a part of the second surface of the ceramic plate; a cooling plate provided at a predetermined distance from the second surface; a heat transfer space present between the metal layer and the cooling plate, and configured to enable heat transfer through gas; a seal member provided along outer peripheries of the ceramic plate and the cooling plate between the ceramic plate and the cooling plate, to impart airtightness to the heat transfer space; and an RF conduction member provided at a position on an inner peripheral side of the seal member between the ceramic plate and the cooling plate to secure electric connection between the metal layer and the cooling plate.
A member for a semiconductor manufacturing equipment includes: a ceramic substrate having an upper surface on which a wafer is to be placed, and a lower surface; a plug placement hole that vertically penetrates the ceramic substrate; and a plug embedded in the plug placement hole; wherein the plug is composed of a dense body and has an upper end surface exposed on a side of the upper surface, a lower end surface exposed on a side of the lower surface, and a gas passage extending from an upper end opening provided on the upper end surface, through an inside of the dense body, to a lower end opening provided on the lower end surface, and wherein the gas passage is provided with a reinforcing rib that divides the upper end opening into a plurality of segments.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
50.
REACTOR AND METHOD FOR PRODUCING SAME, GAS RECOVERY DEVICE, AND GAS RECOVERY SYSTEM
A reactor includes a honeycomb structure including: an outer peripheral wall; porous partition walls provided on an inner side of the outer peripheral wall, the porous partition walls defining first cells, second cells, and third cells through which a process gas containing a trapping target gas, each of the first cells, the second cells, and the third cells extending from an inflow end face to an outflow end face of the honeycomb structure; first plugged portions provided at the first cells on the inflow end face side; second plugged portions provided at the second cells on the outflow end face side; and third plugged portions provided at the third cells on the outflow end face side, the third cells being interposed between the first cells and the second cells, and a functional material having a pellet shape, the functional material being filled in the third cells.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/96 - Regeneration, reactivation or recycling of reactants
51.
GAS SENSOR, METHOD FOR DETERMINING ADJUSTMENT VOLTAGE TARGET VALUE FOR CONTROL OF SENSOR ELEMENT, METHOD FOR MANUFACTURING SENSOR ELEMENT, AND METHOD FOR MANUFACTURING GAS SENSOR
A gas sensor includes a sensor element and a control device, the sensor element including: a measurement pump cell, an adjustment pump cell including an inner adjustment electrode disposed in an oxygen concentration adjustment chamber, and a reference electrode. The control device is configured to control the adjustment pump cell so that an adjustment voltage that is a voltage across the reference electrode and the inner adjustment electrode reaches an adjustment voltage target value, and let V1* [mV] be the adjustment voltage target value, then following Expression (1) and Expression (2) are satisfied: V1*≤−25.7*R+436.0 (1) V1*≥−35.1*R+406.6 (2), where R=Lb*Lb/La, La is a limiting current value [mA] of an adjustment pump current which flows through the adjustment pump cell and Lb is a limiting current value [μA] of a measurement pump current which flows through the measurement pump cell.
A pillar-shaped honeycomb structure includes inlet cells and outlet cells adjacent to at least one of the inlet cells with a partition wall interposed therebetween, wherein a ratio of an opening area (Cin) of each of the inlet cells to an opening area (Cout) of each of the outlet cells, a thickness (WT) of the partition wall, a cell density (CD) based on a total number of the inlet cells and the outlet cells, a depth (PD) of a sealing portion, and a distance (OF) between the midpoint of a line segment connecting the centers of gravity of the inlet cells and the outlet cells adjacent to each other with the partition wall interposed therebetween and the center of the partition wall intersected by the line segment, satisfy predetermined conditions, and furthermore, the honeycomb structure satisfies 2≤OF×CD/(WT×PD)≤7.
A sensor element includes first to fourth chambers communicating sequentially, an adjustment cell pumps oxygen out of a measurement gas introduced into the first chamber so that NOx, H2O, and CO2 are not decomposed, a first measurement cell pumps out oxygen from the second chamber so that all NOx is reduced, a second measurement cell pumps out oxygen from the third chamber so that all H2O and CO2 are reduced, a third measurement cell pumps oxygen into the fourth chamber to selectively oxidize H2 generated by reduction, a concentration of NOx is identified from a current generated by pumping-out by the first measurement pump cell, a concentration of H2O is identified from a current generated by pumping-in by the third measurement pump cell, and a concentration of CO2 is identified based on the identified concentration of H2O and a current generated by pumping-out by the second measurement pump cell.
G01N 27/27 - Association of two or more measuring systems or cells, each measuring a different parameter, where the measurement results may be either used independently, the systems or cells being physically associated, or combined to produce a value for a further parameter
G01N 27/407 - Cells and probes with solid electrolytes for investigating or analysing gases
A separation membrane system is a separation membrane system configured to separate a mixed gas of a combustible gas and an incombustible gas on the basis of permeability, the separation membrane system including a separation membrane configured to allow the combustible gas or the incombustible to gas preferentially permeate therethrough to separate the mixed gas into a combustible gas-enriched gas and an incombustible gas-enriched gas, wherein the incombustible gas-enriched gas is combustible.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
B01D 69/02 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor characterised by their properties
A method of producing a photoelectric conversion element includes the steps of: preparing a laminate including a first electrode, an electron-transporting layer, a perovskite semiconductor film, a hole-transporting layer, and a second electrode; and irradiating the laminate with infrared light.
H10K 71/40 - Thermal treatment, e.g. annealing in the presence of a solvent vapour
H10K 30/40 - Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
A member for a semiconductor manufacturing equipment includes a ceramic substrate including: a terminal dense portion, a plurality of heater electrodes which are zoned, and a plurality of jumper electrode layers; wherein each of the jumper electrode layers is composed of a plurality of planar jumper electrodes that are electrically isolated by an insulator, and wherein in at least one of the terminal dense portion, each of 70% or more of all the terminals arranged in the terminal dense portion is electrically connected to a predetermined planar jumper electrode through a first via extending in the vertical direction, on a condition that it is not electrically connected to a planar jumper electrode located in a layer above any other planar jumper electrode to which other terminals that have a longer distance from an outer periphery of the terminal dense portion than itself are electrically connected.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
57.
EUV TRANSMISSIVE MEMBRANE, PELLICLE, AND EXPOSURE METHOD
Provided is an EUV transmissive membrane having a three-layer configuration composed of a metallic beryllium layer (12) having a first side and a second side, a first nitride layer (14a) that covers the first side (12a) of the beryllium layer (12), wherein the first nitride layer includes at least one selected from the group consisting of silicon nitride, beryllium nitride, boron nitride, and zirconium nitride, and a second nitride layer (14b) that covers the second side (12b) of the beryllium layer (12), wherein the second nitride layer includes at least one selected from the group consisting of silicon nitride, beryllium nitride, boron nitride, and zirconium nitride. The EUV transmissive membrane (10) has an EUV transmittance of 88% or more at a wavelength of 13.5 nm.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
G03F 1/62 - Pellicles or pellicle assemblies, e.g. having membrane on support framePreparation thereof
H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks
58.
EUV TRANSMISSIVE MEMBRANE, PROCESSING METHOD THEREOF, AND EXPOSURE METHOD
Provided is an EUV transmissive membrane (10) having a five-layer configuration consisting of a metallic beryllium layer (12) having a first side and a second side; a first nitride layer (14a) including at least one selected from the group consisting of silicon nitride, beryllium nitride, boron nitride, and zirconium nitride, and a first protective layer (16a) containing amorphous carbon, which cover the first side (12a) of the metallic beryllium layer (12) in sequence; and a second nitride layer (14b) including at least one selected from the group consisting of silicon nitride, beryllium nitride, boron nitride, and zirconium nitride, and a second protective layer (16b) containing amorphous carbon, which cover the second side (12b) of the metallic beryllium layer (12) in sequence. The EUV transmissive membrane has an EUV transmittance of 85% or more at a wavelength of 13.5 nm.
G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
59.
REACTOR, GAS RECOVERY DEVICE, AND GAS RECOVERY SYSTEM
A reactor includes: a honeycomb structure including an outer peripheral wall and porous partition walls provided on an inner side of the outer peripheral wall, the partition walls defining first cells and second cells through which a process gas containing a trapping target gas can flow, each of the first cells and the second cells extending from an inflow end face to an outflow end face of the honeycomb structure, the first cells and the second cells being adjacent to each other via the partition walls; and a functional material having a pellet shape, the functional material being filled in the second cells.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
A member for a semiconductor manufacturing equipment that uses a discharge suppression technology different from conventional ones is provided. A member for a semiconductor manufacturing equipment includes: a ceramic substrate having an upper surface on which a wafer is to be placed and a lower surface; a plug placement hole that vertically penetrates the ceramic substrate; and a plug embedded in the plug placement hole; wherein the plug is composed of a dense body, including an upper end surface exposed on a side of the upper surface, a lower end surface exposed on a side of the lower surface, and a gas passage; and wherein a maximum height D1 in the vertical direction from the upper end opening to a surface of the gas passage, and a maximum height D2 from the lower end opening to the surface of the gas passage satisfies a relationship: D1
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A pillar-shaped honeycomb structure, wherein a cell density based on a total number of a plurality of inlet cells and a plurality of outlet cells is 22 to 70 cells/cm2, wherein a thickness of each of partition walls is in a range of 0.15 mm or more and 0.38 mm or less, wherein an opening ratio at an inlet end surface is 44% or more, and wherein assuming a total surface area of all partition walls partitioning the plurality of inlet cells excluding the inlet cells adjacent to an outer peripheral side wall is S1, and a total surface area of all partition walls sandwiched between adjacent inlet cells among the plurality of inlet cells excluding the inlet cells adjacent to the outer peripheral side wall is S2, 33%≤S2/S1≤75% is satisfied.
A gas sensor includes a sensor element including an element body, a first measurement pump cell, a second measurement pump cell, an adjustment pump cell, and a reference electrode; and a control apparatus, wherein the control apparatus detects a NOx concentration based on a first measurement pump current which flows when the oxygen produced due to reduction of NOx is pumped out, and the control apparatus detects a carbon dioxide concentration based on a second measurement pump current which flows when the oxygen produced due to reduction of carbon dioxide in a second measurement chamber is pumped out, and a change in a first measurement pump current which flows during execution of a adjustment pump control process and a first measurement pump control process when at least one of an adjustment voltage target value or a first measurement voltage target value is changed.
An electrochemical cell includes a current collector layer; a frame body surrounding a side periphery of the current collector layer and having electronic insulating properties, a first electrode layer disposed on the current collector layer, an electrolyte layer disposed on the first electrode layer; and a second electrode layer disposed on an opposite side to the first electrode layer with respect to the electrolyte layer.
An electrochemical cell includes a support body, a first electrode layer, an electrolyte layer, and a second electrode layer. The first electrode layer is disposed on the support body. The electrolyte layer is disposed on the first electrode layer. The second electrode layer is disposed on the side opposite to the first electrode layer with respect to the electrolyte layer. The support has a current collecting layer, a beam portion embedded in the current collecting layer, and a through hole that penetrates along a stacking direction from a first main surface opposite to the first electrode layer to a second main surface facing the first electrode layer.
An electrochemical cell according to a first aspect of the present invention includes a support body, a first electrode layer, an electrolyte layer, and a second electrode layer. The first electrode layer is disposed on the support body. The electrolyte layer is disposed on the first electrode layer. The second electrode layer is disposed on the side opposite to the first electrode layer with respect to the electrolyte layer. The support body has a current collecting layer and a beam portion embedded in the current collecting layer. The first electrode layer includes an overlapping portion that overlaps the beam portion in a stacking direction, and a non-overlapping portion that does not overlap the beam portion in the stacking direction. The average particle size of Ni particles contained in the overlapping portion is smaller than the average particle size of Ni particles contained in the non-overlapping portion.
A composite substrate including: a first piezoelectric layer; a second piezoelectric layer that is disposed to be stacked on the first piezoelectric layer; and a support substrate that supports the first piezoelectric layer and the second piezoelectric layer, an amorphous layer being formed on a bonding interface between at least one of the first piezoelectric layer and the second piezoelectric layer and another layer, the second piezoelectric layer, the first piezoelectric layer, and the support substrate being stacked in this order.
An electrochemical cell including a current collector layer, a gas sealing layer surrounding a side periphery of the current collector layer, a frame body surrounding a side periphery of the gas sealing layer, a first electrode layer disposed on the current collector layer, an electrolyte layer disposed on the first electrode layer; and a second electrode layer disposed on an opposite side to the first electrode layer with respect to the electrolyte layer.
A member for a semiconductor manufacturing equipment includes a ceramic substrate, wherein the ceramic substrate includes a central portion with a central portion upper surface on which a wafer is to be placed, and an outer peripheral portion with an outer peripheral portion upper surface on which a focus ring is to be placed, the outer peripheral portion being located lower than the central portion upper surface, wherein the central portion includes a central portion plug placement hole that vertically penetrates the central portion, and a central portion plug that is embedded in the central portion plug placement hole, and wherein the outer peripheral portion includes an outer peripheral portion plug placement hole that vertically penetrates the outer peripheral portion, and an outer peripheral portion plug embedded in the outer peripheral portion plug placement hole and having a lower relative permittivity than the central portion plug.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
69.
GAS SENSOR AND CONCENTRATION MEASUREMENT METHOD USING GAS SENSOR
An adjustment pump cell performs first pumping-out operation to pump out oxygen so that all H2O and CO2 in a measurement gas introduced into a first chamber are reduced, a first measurement pump cell selectively oxidizes H2 in a second chamber, a second measurement pump cell oxidizes CO in a third chamber, a concentration of H2O and CO2 are identified based on currents generated in respective oxidization, the adjustment pump cell can further perform second pumping-out operation to pump out oxygen from the first chamber to the extent that H2O and CO2 are not reduced in the middle of the first pumping-out operation, and reduction of H2O and CO2 in the first chamber is interrupted upon start of the second pumping-out operation, so that H2O and CO2 generated in the second chamber or the third chamber are emitted outside an element.
G01N 27/407 - Cells and probes with solid electrolytes for investigating or analysing gases
G01N 27/27 - Association of two or more measuring systems or cells, each measuring a different parameter, where the measurement results may be either used independently, the systems or cells being physically associated, or combined to produce a value for a further parameter
G01N 27/30 - Electrodes, e.g. test electrodesHalf-cells
G01N 27/60 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrostatic variables
70.
GAS SENSOR AND CONCENTRATION MEASUREMENT METHOD USING GAS SENSOR
A sensor element includes first to third chambers communicating sequentially from a gas inlet, an adjustment pump cell pumps oxygen into the first chamber so that an H/C component is oxidized, a first measurement pump cell pumps out oxygen from the second chamber so that all H2O and CO2 contained in the measurement gas are reduced, a second measurement pump cell pumps oxygen into the third chamber to selectively oxidize H2 generated by reduction, a concentration of H2O is identified from values of currents generated by pumping-in by the adjustment pump cell and the second measurement pump cell, and a concentration of CO2 is identified based on the identified concentration of H2O, the value of the current generated by pumping-in by the adjustment pump cell, and a value of a current generated by pumping-out by the first measurement pump cell.
A vehicle air conditioning system includes: an air conditioning duct through which air flows; a humidity controlling device disposed in the air conditioning duct; a heat pump cycle including a condenser disposed in the air conditioning duct on a downstream side of the humidity controlling device; and a control unit for controlling the humidity controlling device and the heat pump cycle in response to an operation mode. The control unit comprises a warm-up mode in which the air is heated by the humidity controlling device at the start of a heating operation mode of the heat pump cycle.
An air conditioning system including a heat pump cycle having a refrigerant pipe capable of circulating a refrigerant therethrough, and a compressor capable of compressing the refrigerant. The air conditioning system is provided with at least one heating portion capable of heating the refrigerant in the refrigerant pipe on an upstream side, a downstream side, or both of the upstream side and the downstream side of the compressor based on a flow direction of the refrigerant. The heating portion includes: a honeycomb structure having an outer peripheral wall and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face, at least the partition walls being made of a material having a PTC property.
A method of capturing an acid gas includes: an adsorption step; a desorption step; and a cooling step in the stated order. In the adsorption step, an acid gas is caused to be adsorbed to an acid gas adsorption material by supplying a gas to be treated containing the acid gas to an acid gas adsorption device including the acid gas adsorption material. In the desorption step, the acid gas is caused to be desorbed from the acid gas adsorption material by heating the acid gas adsorption device. In the cooling step, the acid gas adsorption device is cooled with a cooling medium having a temperature less than an outside air temperature.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
A method of capturing an acid gas includes an adsorption step and a desorption step. In the desorption step, the acid gas is caused to be desorbed from the acid gas adsorption material by heating the acid gas adsorption device. The desorption step includes a first desorption step and a second desorption step after at least the first desorption step. In the first desorption step, a first desorption gas is supplied to the acid gas adsorption device so that an acid gas desorbed from the acid gas adsorption material is captured together with the first desorption gas. In the second desorption step, a second desorption gas with lower humidity than humidity of the first desorption gas is supplied to the acid gas adsorption device so that an acid gas desorbed from the acid gas adsorption material is captured together with the second desorption gas.
An acid gas capture system includes: a plurality of acid gas adsorption devices each including an acid gas adsorption material; and a fluid supply line. The fluid supply line allows distribution and supply of a fluid to the plurality of acid gas adsorption devices. The fluid supply line includes a branching portion and a plurality of flow dividing portions. The plurality of flow dividing portions each connect the branching portion and each of the plurality of acid gas adsorption devices to each other. A resistor is provided to each of the plurality of flow dividing portions.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
A member for a semiconductor manufacturing equipment includes a ceramic substrate, wherein the ceramic substrate includes an upper surface having a plurality of protrusions for placing a wafer, wherein each of the plurality of protrusions has an upper end surface, and at least one of the upper end surfaces has a patterned concave-convex shape.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
77.
ACID GAS ADSORPTION DEVICE AND METHOD OF PRODUCING ACID GAS ADSORPTION DEVICE
A acid gas adsorption device includes acid gas-adsorbable particles and an organic binder. The acid gas-adsorbable particles are each capable of adsorbing an acid gas. The organic binder is capable of binding the acid gas-adsorbable particles. The organic binder is soluble in an aprotic polar solvent and is substantially insoluble in a protic polar solvent.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
A honeycomb structure body having a partition wall surrounding cells which serve as fluid through channels extending from a first end face to a second end face, wherein
the partition wall is a porous body having pores that communicate adjacent cells separated by the partition wall are formed,
a ratio (L/T) of a through channel length L (μm) of the pore in the thickness direction of the partition wall to a thickness T (μm) of the partition wall is defined as a bending degree A,
the partition wall constituting the honeycomb structure body has an average bending degree AAve, which is an average value of the bending degree A, of 1.10 to 1.40, and
a value X (X=AAve/B2) obtained by dividing the average bending degree AAve by the square of a deviation bending degree B, which is a deviation of the bending degree A, is 100 to 300.
F01N 3/022 - Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust by means of filters characterised by specially adapted filtering structure, e.g. honeycomb, mesh or fibrous
An acid gas adsorption device includes a first adsorption portion and a second adsorption portion. The second adsorption portion is arranged on a downstream side of the first adsorption portion in a direction of passage of a target gas to be treated so as to be spaced apart from the first adsorption portion. The first adsorption portion includes first flow passages, and the second adsorption portion includes second flow passages. A first desorption gas flow passage communicating with the first flow passages and the second flow passages is defined between the first adsorption portion and the second adsorption portion in the direction of passage of the target gas to be treated.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
80.
DEHUMIDIFICATION DEVICE, HEATER ELEMENT FOR DEHUMIDIFICATION DEVICES, AND VEHICLE INTERIOR DEHUMIDIFICATION SYSTEM
A dehumidification device according to an embodiment may include: a heater element including a honeycomb structure having an outer peripheral wall and partition walls provided on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face of the honeycomb structure to form a flow path, at least the partition walls being made of a material having a PTC property, and a pair of electrodes provided on the honeycomb structure; and a dehumidifying material-containing layer provided on surfaces of the partition walls, the dehumidifying material-containing layer containing a dehumidifying material having a water release temperature of 30 to 70° C.
H05B 3/12 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
81.
GAS SENSOR, AND CONCENTRATION MEASUREMENT METHOD USING GAS SENSOR
A sensor element includes: first to third chambers communicating sequentially from a gas inlet; and a heater performing heating so that a temperature is highest near the first chamber, a first adjustment pump cell pumps oxygen out of a measurement gas introduced into the first chamber to the extent that H2O and CO2 are not decomposed, a second adjustment pump cell pumps out oxygen from the second chamber so that all H2O and CO2 are reduced, a first measurement pump cell pumps oxygen into the third chamber to selectively oxidize H2 near the first measurement electrode, a second measurement pump cell pumps oxygen into the third chamber to oxidize H2 and CO near the second measurement electrode, concentrations of H2O and CO2 are identified from values of currents generated by pumping-in by these measurement pump cells.
A sensor element includes: first to third chambers communicating sequentially from a gas inlet; and a heater performing heating so that a temperature is highest near the first chamber, an adjustment pump cell pumps oxygen out of a measurement gas introduced into the first chamber to the extent that H2O and CO2 are not decomposed, a first measurement pump cell pumps out oxygen from the second chamber so that all H2O and CO2 contained in the measurement gas are reduced, a second measurement pump cell pumps oxygen into the third chamber to selectively oxidize H2 generated by reduction, a concentration of H2O is identified from a value of a current generated by pumping-in by the second measurement pump cell, and a concentration of CO2 is identified based on the identified concentration of H2O and a value of a current generated by pumping-out by the first measurement pump cell.
A member for semiconductor manufacturing apparatus includes a first ceramic plate having a wafer placement surface on its upper surface and a built-in electrode; a second ceramic plate disposed on a lower surface side of the first ceramic plate; a cooling plate disposed on a lower surface side of the second ceramic plate; a first bonding layer made of metal, which is used as an RF electrode and configured to bond the lower surface of the first ceramic plate and an upper surface of the second ceramic plate together; and a second bonding layer made of metal or inorganic composition configured to bond the lower surface of the second ceramic plate and an upper surface of the cooling plate together.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A member for a semiconductor manufacturing equipment, comprising: a dielectric substrate having an upper surface and an opposed lower surface, a plug placement hole vertically penetrating the substrate, a plug embedded in the plug placement hole and having upper and lower surfaces, a conductive base plate bonded to the lower surface of the substrate via a bonding layer, and a gas supply path passing through the base plate and the bonding layer to supply gas to the plug. The plug is composed of a dielectric material and includes a dense portion, a gas passage that has a relative permittivity lower than that of the dense portion and that penetrates the plug to allow the gas to flow, and a voltage drop promoting portion that has a lower relative permittivity than that of the dense portion and that does not constitute a passage for the gas to flow.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A member for a semiconductor manufacturing equipment includes: a ceramic substrate having an upper surface on which a wafer is to be placed, and a lower surface; a plug placement hole; a dielectric plug embedded in the plug placement hole; a film covering at least a part of the lower surface of the dielectric plug and having a volume resistivity lower than that of the dielectric plug; a conductive base plate bonded to the lower surface of the ceramic substrate via a resin adhesive layer, a gas passage that passes through the base plate and the resin adhesive layer to supply gas to the to the gas passage portion of the dielectric plug, and a conductive connecting portion provided in the gas passage and having an upper end electrically connected to the film and a lower end electrically connected to the base plate.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
87.
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE AND BONDED SUBSTRATE
A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface. When “n” peak wavenumbers, which are obtained by measuring peak wavenumbers corresponding to an E2H phonon mode at intervals of 5 μm on a straight line from a position of a center of mass of the first surface to a position of a center of mass of the second surface in a range of from a site inward from the surface of the first surface by 5 μm to a site inward from the second surface by 5 μm, are represented by B1 to Bn from a side closer to the first surface where “n” represents the number of the measured peak wavenumbers, a difference (Bmax−Bmin) between a maximum peak wavenumber Bmax and a minimum peak wavenumber Bmin out of the “n” measured values is 2.0 cm−1 or less.
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
A member for a semiconductor manufacturing equipment, comprising: a ceramic substrate having an upper surface on which a wafer is to be placed and a lower surface; a plug placement hole that vertically penetrates the ceramic substrate and comprises a tapered inner peripheral surface in which an area of an upper opening is larger than an area of a lower opening; a ceramic plug comprising a dense outer peripheral surface and a gas passage penetrating the plug, the ceramic plug being embedded such that the dense outer peripheral surface of the plug is directly fitted to the inner peripheral surface of the plug placement hole; a conductive base plate bonded to the lower surface of the ceramic substrate via a bonding layer; and a gas supply path that passes through the base plate and the bonding layer to supply gas to the gas passage of the ceramic plug.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A wafer placement table includes: a first conductive layer; a second conductive layer different in height from the first conductive layer; and a connector that electrically connect the first conductive layer and the second conductive layer, inside a ceramic plate having a wafer placement surface on its upper surface. The first conductive layer, the second conductive layer and the connector are formed in a seamless one-piece structure.
A liquid fuel production system including: a gas-adsorbing/desorbing portion; a heating medium-supplying portion configured to supply, to the gas-adsorbing/desorbing portion, a heating medium for heating the gas-adsorbing/desorbing portion; a liquid fuel-synthesizing portion including a first gas flow path storing a catalyst that advances a conversion reaction from a raw material gas to a liquid fuel, and a second gas flow path through which a temperature-controlling gas that controls a temperature of the first gas flow path is flowed, the liquid fuel-synthesizing portion being configured to flow a first outflow gas out of the first gas flow path, and to flow a second outflow gas out of the second gas flow path; and a heat exchanger configured to perform heat exchange between the second outflow gas and the heating medium to heat the heating medium. The second outflow gas contains a condensable gas.
A liquid fuel production system including: a gas-adsorbing/desorbing portion; a heating medium-supplying portion configured to supply, to the gas-adsorbing/desorbing portion, a heating medium for heating the gas-adsorbing/desorbing portion; a liquid fuel-synthesizing portion including a first gas flow path storing a catalyst that advances a conversion reaction from a raw material gas to a liquid fuel, and a second gas flow path through which a temperature-controlling gas that controls a temperature of the first gas flow path is flowed, the liquid fuel-synthesizing portion being configured to flow a first outflow gas out of the first gas flow path, and to flow a second outflow gas out of the second gas flow path; and a heat exchanger configured to perform heat exchange between the first outflow gas and the heating medium to heat the heating medium. The first outflow gas contains a condensable gas.
C10L 1/04 - Liquid carbonaceous fuels essentially based on blends of hydrocarbons
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes
B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds
94.
METHOD FOR PRODUCING LIQUID FUEL AND LIQUID FUEL SYNTHESIS SYSTEM
A method of producing a liquid fuel includes: causing a raw material gas containing at least a carbon oxide and hydrogen to flow into a reactor storing a catalyst; and producing the liquid fuel from the raw material gas through a conversion reaction in the presence of the catalyst. The raw material gas further contains oxygen. The ratio of the concentration of carbon monoxide to the concentration of carbon dioxide in the carbon oxide is 0.9 or less.
C10L 1/02 - Liquid carbonaceous fuels essentially based on components consisting of carbon, hydrogen, and oxygen only
95.
METHOD OF INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD OF PRODUCING GROUP-III ELEMENT NITRIDE SUBSTRATE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
Provided is a method of inspecting a Group-III element nitride substrate, the method including: preparing a Group-III element nitride substrate doped with an element except a Group-III element; irradiating the Group-III element nitride substrate with excitation energy; and measuring a half width of a band-edge emission peak of an emission spectrum obtained by the irradiation.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
96.
METHOD FOR PRODUCING LIQUID FUEL AND LIQUID FUEL SYNTHESIS SYSTEM
A method of producing a liquid fuel includes: causing a raw material gas containing at least a carbon oxide and hydrogen to flow into a reactor storing a catalyst; and producing the liquid fuel from the raw material gas through a conversion reaction in the presence of the catalyst. The raw material gas further contains an inert gas. A ratio of a concentration of carbon monoxide to a concentration of carbon dioxide in the carbon oxide is 0.9 or less.
A liquid fuel production system includes: a liquid fuel-synthesizing portion configured to advance a conversion reaction from a raw material gas containing at least hydrogen and a carbon oxide to a liquid fuel; a raw material gas-supplying portion configured to supply the raw material gas to the liquid fuel-synthesizing portion; and a raw material gas-circulating portion configured to resupply a remaining raw material gas, which contains the hydrogen and the carbon oxide that are unreacted, and an acidic by-product of the conversion reaction, from the liquid fuel-synthesizing portion to the raw material gas-supplying portion, wherein the raw material gas-supplying portion includes a mixing portion configured to mix an amine compound and the remaining raw material gas in the presence of water vapor, and a moisture-removing portion configured to remove a neutralized product of the amine compound and the acidic by-product together with condensed water of the water vapor.
C10L 1/02 - Liquid carbonaceous fuels essentially based on components consisting of carbon, hydrogen, and oxygen only
C07C 1/04 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon monoxide with hydrogen
A solid electrolyte includes, as a main phase, a monoclinic phase of a compound containing Li, F, and M that is a metallic element(s) other than Li or a metalloid element(s). In an X-ray diffraction pattern obtained by an X-ray diffraction measurement, a content of the monoclinic phase quantitatively determined by an RIR method is higher than or equal to 65%.
A solid electrolyte contains A, M, F, and X. A is at least one element selected from a group consisting of Li, Na, and K. M is a metallic element(s) other than A or a metalloid element(s). X is at least one element selected from a group consisting of Cl, Br, and I.
There is provided a ceramic susceptor including: a disk-shaped ceramic plate bonded body including an upper ceramic plate and a lower ceramic plate bonded to each other at a bonding surface, the disk-shaped ceramic plate bonded body having a first surface opposite the bonding surface of the upper ceramic plate and a second surface opposite the bonding surface of the lower ceramic plate; at least one internal electrode selected from the group consisting of an RF electrode and an ESC electrode, the internal electrode being embedded in the upper ceramic plate parallel to the first surface; a first heater circuit embedded in the lower ceramic plate parallel to the first surface; and a thermocouple insertion groove provided in the bonding surface side of the upper ceramic plate or the lower ceramic plate, the thermocouple insertion groove forming a thermocouple insertion path together with the bonding surface.
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
patents
